Semiconductor device

Abstract

Provided is a novel semiconductor device. In this invention: one of a source and a drain of a first transistor is connected to one of a source and a drain of a second transistor and one of a source and a drain of a third transistor; the other of the source and the drain of the first transistor is connected to an output terminal of an image signal input unit; the other of the source and the drain of the third transistor is connected to one of a source and a drain of a fourth transistor and one of a source and a drain of a fifth transistor; a gate of the third transistor is connected to one terminal of a capacitive element, the other of the source and the drain of the fifth transistor, and one of a source and a drain of a sixth transistor; a control terminal is connected to the other of the source and the drain of the second transistor and the other terminal of the capacitive element; and the other of the source and the drain of the fourth transistor is connected to one terminal of a light-emitting element.

Description

Semiconductor equipment

[0001] One aspect of the present invention relates to a semiconductor device.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. One aspect of the present invention disclosed herein relates to a product, method, or method of manufacture. Alternatively, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. More specifically, one example of a technical field of one aspect of the present invention disclosed herein is semiconductor devices, display devices, light-emitting devices, energy storage devices, optical devices, imaging devices, illumination devices, computing devices, control devices, memory devices, input devices, output devices, input / output devices, signal processing devices, computing processing devices, computers, electronic devices, methods for driving them, or methods for manufacturing them.

[0003] In recent years, display devices have been applied to a wide variety of uses. Examples of large-scale display devices include home television systems, digital signage, and PID (Public Information Display). Examples of small-scale display devices include mobile information terminals such as smartphones and tablet devices, as well as wearable devices such as VR (Virtual Reality) and AR (Augmented Reality) devices. Furthermore, the functionality and added value of display devices are being enhanced by adding functions other than display. For example, display devices that function as touch panels have been developed by incorporating touch sensors.

[0004] Furthermore, the pixels of a display device use light-emitting elements such as light-emitting diodes, and various pixel circuits (circuits that control the luminescence brightness of light-emitting elements) have been proposed to improve the performance of the display device. For example, Patent Document 1 discloses a pixel circuit that can correct the threshold voltage of a driving transistor (a transistor that controls the amount of current supplied to the light-emitting element in accordance with the image signal).

[0005] Japanese Patent Publication No. 2005-31630

[0006] Takashi Koida, "High-Mobility Transparent Conductive Film," National Institute of Advanced Industrial Science and Technology (AIST), AIST Photovoltaic Power Generation Research Results Presentation 2019, Internet <URL: https: / / unit.aist.go.jp / rpd-envene / PV / ja / results / 2019 / oral / T13.pdf>

[0007] The pixel circuit described in Patent Document 1 can correct the threshold voltage of the drive transistor, but it cannot correct variations in luminescence brightness due to fluctuations in the power supply potential. For example, when a pixel that emits light at high brightness is produced in the display unit, a large current is supplied to that pixel. This may cause a decrease in the power supply voltage (also called "IR drop"). The amount of IR drop variation also changes depending on the overall luminescence brightness of the display unit. Fluctuations in IR drop contribute to a decrease in display quality, such as an increase in display unevenness.

[0008] One aspect of the present invention aims to provide a semiconductor device that is less susceptible to fluctuations in power supply voltage. Alternatively, it aims to provide a semiconductor device in which the effects of variations in characteristics are reduced. Alternatively, it aims to provide a semiconductor device with low power consumption. Alternatively, it aims to provide a semiconductor device with good reliability. Alternatively, it aims to provide a novel semiconductor device.

[0009] Furthermore, the description of the above-mentioned problems does not preclude the existence of other problems. Other problems can be naturally derived from the description in the specification, drawings, and claims of a person skilled in the art, and it is possible to extract other problems from the description in the specification, drawings, and claims. Furthermore, one aspect of the present invention does not need to solve all of these problems (the above-mentioned problems and other problems).

[0010] (1) One aspect of the present invention includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a capacitive element, a light-emitting element, and an image signal input unit. The image signal input unit has an input terminal, an output terminal, and a control terminal. One of the source or drain of the first transistor is electrically connected to one of the source or drain of the second transistor and one of the source or drain of the third transistor. The other of the source or drain of the first transistor is electrically connected to the output terminal. The other of the source or drain of the third transistor is electrically connected to one of the source or drain of the fourth transistor and one of the source or drain of the fifth transistor. The gate of the third transistor is electrically connected to one terminal of the capacitive element, the other of the source or drain of the fifth transistor, and one of the source or drain of the sixth transistor. The control terminal is electrically connected to the other of the source or drain of the second transistor and the other terminal of the capacitive element. The other of the source or drain of the fourth transistor is electrically connected to one terminal of the light-emitting element. The image signal input unit is a semiconductor device that has a function of converting an image signal given from the input terminal based on a potential given to the control terminal and outputting the converted image signal to the output terminal.

[0011] (2) Further, in the above (1), each of the first to fourth transistors may be a p-type transistor.

[0012] (3) Further, in the above (1), each of the fifth and sixth transistors may be an n-type transistor.

[0013] (4) Further, in the above (1), each of the first to fourth transistors may contain silicon in a semiconductor layer in which a channel is formed.

[0014] (5) Further, in the above (1), each of the fifth and sixth transistors may contain an oxide semiconductor in a semiconductor layer in which a channel is formed.

[0015] (6) Further, in the above (5), the oxide semiconductor may be indium.

[0016] (7) One aspect of the present invention includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a capacitive element, and a light-emitting element. The seventh transistor has a back gate. One of the source or drain of the first transistor is electrically connected to one of the source or drain of the second transistor and one of the source or drain of the third transistor. The other of the source or drain of the first transistor is electrically connected to one of the source or drain of the seventh transistor. The other of the source or drain of the third transistor is electrically connected to one of the source or drain of the fourth transistor and one of the source or drain of the fifth transistor. The gate of the third transistor is electrically connected to one terminal of the capacitive element, the other of the source or drain of the fifth transistor, and one of the source or drain of the sixth transistor. The back gate of the seventh transistor is electrically connected to the other of the source or drain of the second transistor and the other terminal of the capacitive element. The other of the source or drain of the fourth transistor has a function of being electrically connected to one terminal of the light-emitting element.

[0017] (8) Further, in the above (7), each of the first to fourth transistors may be a p-type transistor.

[0018] (9) Further, in the above (7), each of the fifth to seventh transistors may be an n-type transistor.

[0019] (10) Further, in the above (7), each of the first to fourth transistors may contain silicon in the semiconductor layer where the channel is formed.

[0020] (11) Further, in the above (7), each of the fifth to seventh transistors may contain an oxide semiconductor in the semiconductor layer where the channel is formed.

[0021] (12) In addition, in (11) above, the oxide semiconductor may be indium.

[0022] According to one aspect of the present invention, a semiconductor device that is less susceptible to fluctuations in power supply voltage can be provided. Alternatively, a semiconductor device with reduced effects of variations in characteristics can be provided. Alternatively, a semiconductor device with low power consumption can be provided. Alternatively, a semiconductor device with good reliability can be provided. Alternatively, a novel semiconductor device can be provided.

[0023] Furthermore, the description of the above effects does not preclude the existence of other effects. Other effects can be naturally derived from the description in the specification, drawings, and claims by those skilled in the art, and it is possible to extract other effects from the description in the specification, drawings, and claims. Furthermore, one aspect of the present invention does not need to have all of these effects (the above effects and other effects).

[0024] Figure 1 is a circuit diagram illustrating an example configuration of a semiconductor device. Figure 2 is a circuit diagram illustrating an example configuration of a semiconductor device. Figure 3 is a circuit diagram illustrating an example configuration of a semiconductor device. Figure 4 is a circuit diagram illustrating an example configuration of a semiconductor device. Figure 5 is a timing chart illustrating an example operation of a semiconductor device. Figure 6 is a circuit diagram illustrating an example operation of a semiconductor device. Figure 7 is a circuit diagram illustrating an example operation of a semiconductor device. Figure 8 is a circuit diagram illustrating an example operation of a semiconductor device. Figure 9 is a circuit diagram illustrating an example operation of a semiconductor device. Figure 10 is a circuit diagram illustrating an example operation of a semiconductor device. Figure 11 is a circuit diagram illustrating an example configuration of a semiconductor device. Figures 12A and 12B are block diagrams illustrating an example configuration of a display device. Figures 13A, 13B, and 13C are diagrams illustrating an example configuration of a transistor. Figures 14A, 14B, and 14C are diagrams illustrating an example configuration of a transistor. Figure 15 is a plan view illustrating an example configuration of a semiconductor device. Figures 16A and 16B are cross-sectional views illustrating an example configuration of a semiconductor device. Figure 17A is a perspective view illustrating an example configuration of a display device. Figures 17B, 17C, 17D, 17E, and 17F are top views illustrating an example of a pixel arrangement. Figure 18 is a cross-sectional view illustrating an example of a display device configuration. Figures 19A and 19B are cross-sectional views illustrating an example of a display device configuration. Figures 20A and 20B are cross-sectional views illustrating an example of a display device configuration. Figures 21A, 21B, 21C, and 21D are diagrams illustrating an example of an electronic device. Figures 22A, 22B, 22C, 22D, 22E, and 22F are diagrams illustrating an example of an electronic device. Figures 23A, 23B, 23C, 23D, 23E, 23F, and 23G are diagrams illustrating an example of an electronic device. Figures 24A and 24B illustrate the carrier concentration dependence of hole mobility. Figure 24C is a cross-sectional view illustrating an indium oxide film. Figures 25A1, 25A2, 25A3, 25A4, 25A5, 25A6, 25A7 and 25B1, 25B2, 25B3, 25B4, 25B5, and 25B6 are diagrams illustrating electrical connections.

[0025] In this specification, a semiconductor device is a device that utilizes semiconductor properties, such as a circuit containing semiconductor elements (e.g., transistors or diodes), or a device having such a circuit. It also refers to any device that can function by utilizing semiconductor properties. For example, integrated circuits containing semiconductor elements, chips equipped with integrated circuits, electronic components with chips housed in a package, or electronic devices on which electronic components are mounted are examples of semiconductor devices. Furthermore, for example, display devices, light-emitting devices, energy storage devices, optical devices, imaging devices, illumination devices, computing devices, control devices, memory devices, input devices, output devices, input / output devices, signal processing devices, computers, or electronic devices are themselves semiconductor devices and may also contain semiconductor devices.

[0026] The embodiments will be described below with reference to the drawings. However, the embodiments can be implemented in many different ways. Therefore, it will be easily understood by those skilled in the art that their form and details can be changed in various ways without departing from the spirit and scope. Accordingly, the present invention is not to be construed as being limited to the contents described in the embodiments.

[0027] Furthermore, in this specification, the configurations shown in each embodiment can be appropriately combined with the configurations shown in other embodiments to form one aspect of the present invention. Also, if multiple configurations are shown in one embodiment, these configurations can be appropriately combined to form one aspect of the present invention.

[0028] Furthermore, in drawings illustrating embodiments of the invention, the same reference numerals may be used across different drawings for identical or functionally similar parts, thereby omitting repeated explanations. Also, in drawings, if similar functions are indicated, for example, by using the same hatching patterns, reference numerals may not be assigned. Additionally, to facilitate understanding, some components may be omitted in drawings, such as in perspective views or plan views. Furthermore, some hidden lines may be omitted in drawings. Finally, some hatching patterns may be omitted in drawings.

[0029] Furthermore, in drawings, size, layer thickness, or area may be exaggerated for clarity. Therefore, drawings are not limited to, for example, their size or aspect ratio. Also, drawings are schematic representations of ideal examples and are not limited to, for example, the shapes or values ​​shown in the drawings. For example, in actual manufacturing processes, layers or resist masks may be unintentionally reduced due to processes such as etching, but these may not be reflected in the drawings for ease of understanding. Similarly, in actual circuit operation, variations in voltage or current may occur due to noise or timing discrepancies, but these may not be reflected in the drawings for ease of understanding.

[0030] Furthermore, in this specification and the drawings, components may be classified by function and shown as independent elements. However, it is difficult to separate components by function, and there are cases where multiple functions are involved in a single element, or where a single function is involved across multiple elements. Therefore, the elements shown in this specification and the drawings are not limited to their descriptions and may be appropriately rephrased depending on the situation.

[0031] Furthermore, in this specification and drawings, when the same reference numeral is used for multiple elements, and especially when it is necessary to distinguish them, the reference numeral may be accompanied by an identifying numeral such as "A", "b", "_1", "[n]", or "[m,n]". Also, when describing something common to multiple elements that have been given identifying numerals, or when it is not necessary to distinguish them, the identifying numeral may be omitted.

[0032] In this specification, the "conducting state" or "on state" of a transistor refers to a state in which the source and drain of the transistor can be considered to be electrically short-circuited, or a state in which current can flow between the source and drain (also called a state in which current can flow). For example, in an n-channel field-effect transistor (also called an "n-type transistor"), the state in which the voltage between the gate and source is higher than the threshold voltage, or in a p-channel field-effect transistor (also called a "p-type transistor"), the state in which the voltage between the gate and source is lower than the threshold voltage, may be referred to as the "conducting state" or "on state." Furthermore, the "non-conducting state," "blocked state," or "off state" of a transistor refers to a state in which the source and drain of the transistor can be considered to be electrically blocked. For example, in an n-type transistor, the state in which the voltage between the gate and source is lower than the threshold voltage, or in a p-type transistor, the state in which the voltage between the gate and source is higher than the threshold voltage, may be referred to as the "non-conducting state," "blocked state," or "off state."

[0033] Furthermore, in this specification, the voltage between the gate and source (gate-source) is sometimes referred to as the "gate voltage," the voltage between the drain and source (drain-source) is sometimes referred to as the "drain voltage," and the voltage between the back gate and source (back gate-source) is sometimes referred to as the "back gate voltage." Also, the current flowing between the drain and source is sometimes referred to as the "drain current." Note that in n-type transistors, descriptions such as "high gate voltage," "high drain voltage," and "high back gate voltage" can be appropriately interpreted as equivalent to descriptions such as "low gate voltage," "low drain voltage," and "low back gate voltage" in p-type transistors. Similarly, descriptions such as "low gate voltage," "low drain voltage," and "low back gate voltage" in n-type transistors can be appropriately interpreted as equivalent to descriptions such as "high gate voltage," "high drain voltage," and "high back gate voltage" in p-type transistors.

[0034] Furthermore, in this specification, unless otherwise specified, the "off-current" of a transistor refers to the drain current when the transistor is in the off state. In this specification, the off-current, and the current flowing between the gate, source, and drain, may also be referred to as leakage current or gate leakage current.

[0035] In this specification, one of the source or drain (also called the two input / output terminals) of a transistor may be referred to as the first terminal, and the other of the source or drain of a transistor may be referred to as the second terminal. That is, a transistor has at least a gate (also called the gate terminal), a first terminal, and a second terminal. In addition, one terminal of a capacitive element (also called one of a pair of terminals) may be referred to as the first terminal, and the other terminal of a capacitive element (also called the other of a pair of terminals) may be referred to as the second terminal. In addition, one terminal of a display element may be referred to as the first terminal, and the other terminal of a display element may be referred to as the second terminal. In addition, one terminal of a liquid crystal element may be referred to as the first terminal, and the other terminal of a liquid crystal element may be referred to as the second terminal.

[0036] Furthermore, in drawings and other illustrations relating to this specification, arrows indicating the X, Y, and Z directions may be included. In this specification, the "X direction" is the direction along the X axis, and unless explicitly stated, the forward and reverse directions may not be distinguished. The same applies to the "Y direction" and "Z direction". Also, the X, Y, and Z directions are directions that intersect each other. For example, the X, Y, and Z directions are directions that are orthogonal to each other. In this specification, one of the X, Y, or Z directions may be referred to as the "first direction" or "first direction". Another may be referred to as the "second direction" or "second direction". The remaining one may be referred to as the "third direction" or "third direction".

[0037] (Embodiment 1) A semiconductor device according to one aspect of the present invention will be described with reference to the drawings. At least a part of the semiconductor device according to one aspect of the present invention can be used as a display device or the like.

[0038] <Example of Semiconductor Device Configuration> Figure 1 shows an example of the circuit configuration of the semiconductor device 100. The semiconductor device 100 has a pixel circuit 101 and a light-emitting element LD. The pixel circuit 101 has transistors M11 to M16, a capacitive element C11, and an image signal input section 110. The semiconductor device 100 can also be referred to as a pixel.

[0039] The image signal input unit 110 has an input terminal 111, an output terminal 112, and a control terminal 113. The input terminal 111 of the image signal input unit 110 is connected to wiring SL.

[0040] One source or drain of transistor M11 is connected to one source or drain of transistor M12 and one source or drain of transistor M13. The gate of transistor M11 is connected to wiring GW. The other source or drain of transistor M11 is connected to the output terminal 112 of the image signal input unit 110.

[0041] The source or drain of transistor M13 is connected to one source or drain of transistor M14 and one source or drain of transistor M15. The gate of transistor M13 is connected to one terminal of capacitive element C11, the other source or drain of transistor M15 and one source or drain of transistor M16.

[0042] The source or drain of transistor M12 is connected to wiring ANO, the other terminal of capacitive element C11, and the control terminal 113 of the image signal input unit 110. The gate of transistor M12 is connected to wiring EM1.

[0043] The gate of transistor M14 is connected to wiring EM2. The source or drain of transistor M14 is connected to the anode of the light-emitting element LD. The cathode of the light-emitting element LD is connected to wiring CATH.

[0044] The gate of transistor M15 is connected to wiring GC.

[0045] The gate of transistor M16 is connected to wiring GI. The other end of the source or drain of transistor M16 is connected to wiring VL1.

[0046] In Figure 1, the gate of transistor M13, one terminal of capacitive element C11, the other source or drain of transistor M15, and one source or drain of transistor M16 are connected to each other. In this specification, the region in which these are always connected to each other during circuit operation may be referred to as node ND1.

[0047] Furthermore, one source or drain of transistor M11, one source or drain of transistor M12, and one source or drain of transistor M13 are connected to each other. In this specification, the region in which these are always connected to each other during circuit operation may be referred to as node ND2.

[0048] Transistors M12, M13, M14, and a light-emitting element LD are provided in the current path between wiring ANO and wiring CATH. That is, the current flowing through the light-emitting element LD also flows through the channel formation regions of transistor M12, transistor M13, and transistor M14. In addition to transistors M12, M13, and M14, another transistor may be provided in the current path.

[0049] Wiring SL functions as a signal line. Wiring SL has the function of transmitting image signals supplied from a circuit provided outside the semiconductor device 100 (for example, a drive circuit such as a source driver) to the pixel circuit 101. Wiring EM1, Wiring EM2, Wiring GW, Wiring GI, and Wiring GC each also functions as a signal line. Wiring EM1, Wiring EM2, Wiring GW, Wiring GI, and Wiring GC each have the function of transmitting signals supplied from a circuit provided outside the semiconductor device 100 (for example, a drive circuit such as a gate driver). Wiring ANO, Wiring CATH, and Wiring VL1 each have the function of a power line. Wiring ANO, Wiring CATH, and Wiring VL1 each have the function of transmitting potential supplied from a circuit provided outside the semiconductor device 100 (for example, a power supply circuit). Note that at least one of Wiring ANO, Wiring CATH, and Wiring VL1 may also function as a signal line.

[0050] Furthermore, two or more of the multiple wires that function as signal lines may be connected to each other as appropriate. Also, two or more of the multiple wires that function as power lines may be connected to each other as appropriate. Also, one or more of the multiple wires that function as power lines may be connected to one or more of the multiple wires that function as signal lines as appropriate. By sharing some of the wiring, the layout area can be reduced. Therefore, the resolution of the display device can be improved.

[0051] A light-emitting diode (LD) emits light with an intensity corresponding to the amount of current flowing through it. Examples of light-emitting diodes (LDs) include self-emissive light-emitting elements such as LEDs (Light Emitting Diodes), organic LEDs (OLEDs), and QLEDs (Quantum-dot LEDs). For example, mini-LEDs or micro-LEDs can be used as LEDs. In this specification, such light-emitting elements are sometimes collectively referred to as light-emitting diodes.

[0052] Transistor M11 functions as a switch that controls whether or not to supply potential from the image signal input unit 110 to either the source or the drain of transistor M13.

[0053] Transistor M12 functions as a switch that controls whether or not to interrupt the current flowing through the light-emitting element LD. In other words, it can be said that it has the function of controlling whether the light-emitting element LD emits light or not.

[0054] Transistor M13 has the function of controlling the amount of current supplied to the light-emitting element LD in accordance with an image signal provided from a circuit (for example, a driving circuit such as a source driver) located outside the semiconductor device 100. A potential corresponding to the image signal is applied to the gate of transistor M13. Therefore, a drain current based on this potential (gate voltage) flows, and it can be said that this drain current flows to the light-emitting element LD. In this specification, a transistor having a function like that of transistor M13 is sometimes called a driving transistor.

[0055] Transistor M14 functions as a switch that controls whether or not to interrupt the current flowing through the light-emitting element LD. In other words, it can be said that it has the function of controlling the switching between light emission and non-light emission in the light-emitting element LD.

[0056] Transistor M15 functions as a switch that controls whether or not to supply potential to the gate of transistor M13 from the other side of its source or drain.

[0057] Transistor M16 functions as a switch that controls whether or not to supply potential from wiring VL1 to the gate of transistor M13.

[0058] The capacitive element C11 has the function of holding the gate voltage of the transistor M13.

[0059] The image signal input unit 110 has the function of generating a potential corresponding to the image signal supplied from the wiring SL and outputting that potential to the output terminal 112. This potential is ultimately supplied to the gate of the drive transistor M13.

[0060] Furthermore, the pixel circuit 101 has an image signal input unit 110, which allows it to adjust the image signal supplied from wiring SL so as to mitigate the effects of fluctuations in the IR drop of the power supply potential supplied from wiring ANO. This improves the display quality of the display device.

[0061] Furthermore, various types of transistors can be used as the transistors constituting the pixel circuit 101. For example, MOS field-effect transistors, junction field-effect transistors, or bipolar transistors can be used.

[0062] Furthermore, transistors of various structures can be used as the transistors constituting the pixel circuit 101. For example, various transistor structures can be used, such as top-gate type (e.g., planar type and staggered type), bottom-gate type (e.g., inverse planar type and inverse staggered type), dual-gate type (a structure in which gates are arranged on both sides (e.g., top and bottom) of the channel formation region), FIN type, TRI-GATE type, GAA type (gate all-around type), and CFET type (complementary field effect transistor type). In addition, for example, vertical transistors (transistors whose channel length direction has a component in the vertical direction (also called the height direction or the direction perpendicular to the surface to be formed)) can be used.

[0063] In one aspect of the present invention, as the transistor constituting the pixel circuit 101, for example, a transistor containing a single-crystal semiconductor, a polycrystalline semiconductor, a microcrystalline semiconductor, or an amorphous semiconductor in the channel formation region can be used. Furthermore, the semiconductor is not limited to a single-element semiconductor whose main component is a single element (for example, silicon or germanium), but can also be a compound semiconductor (for example, silicon germanium or gallium arsenide), or an oxide semiconductor (also called an oxide semiconductor or simply OS).

[0064] For example, as the transistors constituting the pixel circuit 101, a transistor containing silicon in the channel formation region (also called a Si transistor) may be used, or a transistor containing oxide semiconductor in the channel formation region (also called an OS transistor) may be used, or both a Si transistor and an OS transistor may be used.

[0065] Furthermore, in the pixel circuit 101, it is preferable to use transistors with low off-currents for each of the transistors M11, M12, M14, M15, and M16. By using transistors with low off-currents, the power consumption of the pixel circuit 101 can be reduced.

[0066] In the semiconductor device 100 shown in Figure 1, p-type transistors can be used for transistors M11 to M14. Normally-off p-type transistors are easier to implement than n-type transistors, and circuit design is relatively simpler. In particular, p-type transistors are preferred for transistors M12 to M14. Since transistors M12 to M14 are located on the anode side (high power supply potential side) of the light-emitting element LD, if n-type transistors are used for these transistors, it is necessary to supply a potential to the gate that is higher than the potential supplied to the wiring ANO plus the threshold voltage of the transistor. Therefore, a new power supply potential is required. On the other hand, if p-type transistors are used for transistors M12 to M14, transistors M12 to M14 can be turned on at a potential lower than the potential supplied to the wiring ANO. Therefore, a new power supply potential is not required. Thus, p-type transistors are preferred for the transistors whose source and drain are connected in series between the wiring ANO and the anode of the light-emitting element LD.

[0067] Furthermore, in the semiconductor device 100 shown in Figure 1, n-type transistors can be used for transistors M15 and M16. In particular, when n-type transistors are used as transistors in the pixel circuit 101, it is preferable to use OS transistors. Since oxide semiconductors have a band gap of 2 eV or more, OS transistors have an extremely small off-current. For example, by using OS transistors for transistors M15 and M16, the potential corresponding to the image signal supplied to node ND1 can be maintained for a long period of time. Therefore, the refresh rate of a display device using the semiconductor device 100 as the display unit can be reduced. By reducing the refresh rate, the power consumption of the display device can be reduced. In addition, by using OS transistors, the effect of hysteresis in the driving transistors is reduced, and the display quality of the display device can be improved. Therefore, the light emission intensity of the light-emitting element LD is stabilized, and the reliability of the semiconductor device 100 can be increased.

[0068] Furthermore, the oxide semiconductor used in the semiconductor layer of the OS transistor preferably contains indium.

[0069] Figure 2 shows a modified example of the semiconductor device 100 shown in Figure 1, in which transistors M15 and M16 in the pixel circuit 101 are p-type transistors.

[0070] In one aspect of the present invention, a transistor having the function of a switch has the function of controlling the conduction or non-conductivity between the source destination and the drain destination. For example, transistor M11 has the function of controlling the conduction or non-conductivity between the output terminal 112 of the image signal input unit 110 and node ND2. Also, for example, transistor M12 has the function of controlling the conduction or non-conductivity between node ND2 and wiring ANO, the other terminal of the capacitive element C11 and the control terminal 113 of the image signal input unit 110. Also, for example, transistor M14 has the function of controlling the conduction or non-conductivity between the other source or drain of transistor M13 and one source or drain of transistor M15 and the anode of the light-emitting element LD, or the function of controlling the conduction or non-conductivity between the other source or drain of transistor M13 and one source or drain of transistor M15 and the wiring CATH. Furthermore, for example, transistor M15 has the function of controlling the conduction or non-conductivity between node ND1 and the other source or drain of transistor M13 and the one source or drain of transistor M14. Also, for example, transistor M16 has the function of controlling the conduction or non-conductivity between node ND1 and wiring VL1.

[0071] Furthermore, in one embodiment of the present invention, the on or off state of a transistor having a switch function is controlled by the potential of the gate to which it is connected. For example, the on or off state of transistor M11 is controlled by the potential of wiring GW. Also, for example, the on or off state of transistor M12 is controlled by the potential of wiring EM1. Also, for example, the on or off state of transistor M14 is controlled by the potential of wiring EM2. Also, for example, the on or off state of transistor M15 is controlled by the potential of wiring GC. Also, for example, the on or off state of transistor M16 is controlled by the potential of wiring GI.

[0072] Furthermore, in one aspect of the present invention, a transistor having the function of a switch has the function of supplying the potential of one of its source or drain connections to the other of its source or drain connections, or supplying the potential of the other of its source or drain connections to one of its source or drain connections. In other words, the potential of one of the source or drain connections of a transistor is supplied to the other of its source or drain connections via the channel formation region of the transistor. Or, the potential of the other of its source or drain connections is supplied to one of its source or drain connections via the channel formation region of the transistor. For example, transistor M11 has the function of supplying the potential of the output terminal 112 of the image signal input unit 110 to node ND2. Also, for example, transistor M12 has the function of supplying the potential of wiring ANO to node ND2. Also, for example, transistor M14 has the function of supplying the potential of node ND2 to the anode of the light-emitting element LD. Also, for example, transistor M15 has the function of supplying the potential of node ND2 to node ND1. Furthermore, for example, transistor M16 has the function of supplying the potential of wiring VL1 to node ND1. In this case, the supplied potential may differ by the amount of the transistor's threshold voltage.

[0073] <Specific Examples of Semiconductor Devices> Next, we will describe specific configuration examples of semiconductor device 100.

[0074] Figure 3 is a circuit configuration example showing the specific configuration of the image signal input unit 110 in the semiconductor device 100 shown in Figure 1.

[0075] As shown in Figure 3, semiconductor device 100A corresponds to semiconductor device 100 shown in Figure 1. In Figure 3, pixel circuit 101A corresponds to pixel circuit 101. Therefore, the above explanation can be referred to as appropriate, and the explanation may be omitted here.

[0076] In Figure 3, the image signal input unit 110 has a transistor M17. One of the sources or drains of transistor M17 is connected to the other of the source or drain of transistor M11. The gate of transistor M17 is connected to wiring SL. The other of the source or drain of transistor M17 is connected to wiring VL2.

[0077] Furthermore, transistor M17 is a transistor with a back gate. The back gate of transistor M17 is connected to the other source or drain of transistor M12, the other terminal of the capacitive element C11, and wiring ANO.

[0078] The gate and back gate of a transistor are positioned so as to sandwich the channel formation region of the semiconductor layer. Both the gate and back gate are formed from a conductive layer or a semiconductor layer with low resistivity.

[0079] Wiring VL2 functions as a power line. For example, it has the function of transmitting the potential supplied from a circuit (e.g., a power supply circuit) located outside the semiconductor device 100A. Wiring VL2 may also function as a signal line.

[0080] Transistor M17 functions as a transistor (sometimes called an amplifying transistor) that generates a potential corresponding to the image signal supplied from wiring SL and outputs that potential.

[0081] The semiconductor device 100A can supply a potential corresponding to the image signal provided from the wiring SL to the gate of transistor M17. In this case, by supplying a potential to the gate of transistor M17 that is the image signal plus the threshold voltage of transistor M17, the same potential as the image signal can be supplied to either the source or drain of transistor M17. Furthermore, by separately controlling the potential supplied to the gate and the potential supplied to the back gate of transistor M17, the threshold voltage of transistor M17 can be changed by changing the potential supplied to the back gate.

[0082] In the semiconductor device 100A shown in Figure 3, p-type transistors can be used for transistors M11 to M14. Furthermore, it is preferable to use an n-type transistor for transistor M17 in order to supply a positive potential to node ND2 according to the image signal. In addition, n-type or p-type transistors can be used for transistors M15 and M16. As mentioned above, by using OS transistors for transistors M15 and M16, the potential of node ND1 can be maintained for a long period of time.

[0083] Figure 4 shows a modified version of the semiconductor device 100A shown in Figure 3, further comprising a transistor M18. In the semiconductor device 100A shown in Figure 4, one of the sources or drains of transistor M18 is connected to the anode of the light-emitting element LD. The other of the sources or drains of transistor M18 is connected to wiring VL3. The gate of transistor M18 is connected to wiring GB.

[0084] In Figure 4, transistor M18 can be either an n-type transistor or a p-type transistor. Here, a p-type transistor is used as an example.

[0085] Transistor M18 functions as a switch that controls whether or not to supply potential from wiring VL3 to one terminal of the light-emitting element LD. By having transistor M18, semiconductor device 100A can, for example, when transistor M14 is turned off, supply a potential from wiring VL3 to one terminal of the light-emitting element LD that causes the light-emitting element LD to stop emitting light. Therefore, the operation of the display device can be stabilized.

[0086] In one embodiment of the present invention, a transistor having the function of a switch has the function of controlling the conduction or non-conductivity between the source destination and the drain destination. For example, transistor M17 has the function of controlling the conduction or non-conductivity between the other source or drain of transistor M11 and the wiring VL2. For example, transistor M18 has the function of controlling the conduction or non-conductivity between the other source or drain of transistor M14, the anode of the light-emitting element LD, and the wiring VL3, or the function of controlling the conduction or non-conductivity between the other source or drain of transistor M14, the wiring CATH, and the wiring VL3.

[0087] Furthermore, in one embodiment of the present invention, the on or off state of a transistor functioning as a switch is controlled by the potential of the gate to which it is connected. For example, the on or off state of transistor M18 is controlled by the potential of wiring GB.

[0088] Furthermore, in one embodiment of the present invention, a transistor having the function of a switch has the function of supplying the potential of one of its source or drain connections to the other of its source or drain connections, or supplying the potential of the other of its source or drain connections to one of its source or drain connections. In other words, the potential of one of the source or drain connections of a transistor is supplied to the other of its source or drain connections via the channel formation region of the transistor. Or, the potential of the other of its source or drain connections is supplied to one of its source or drain connections via the channel formation region of the transistor. For example, transistor M18 has the function of supplying the potential of wiring VL3 to the other of the source or drain of transistor M14 and to the anode of the light-emitting element LD. In this case, the supplied potentials may differ by the amount of the threshold voltage of transistor M18.

[0089] <Examples of Semiconductor Device Operation> Next, we will describe examples of the operation of the semiconductor device 100. Here, as an example, we will describe the operation of the semiconductor device 100A shown in Figure 4.

[0090] Figure 5 is a timing chart illustrating an example of operation of the semiconductor device 100A shown in Figure 4. Figures 6 to 10 are circuit diagrams illustrating an example of operation of the semiconductor device 100A shown in Figure 4.

[0091] In semiconductor device 100A, each of the wires EM1, EM2, GW, GC, GI, and GB functions as a signal line. The potential of the signal applied to each of the wires EM1, EM2, GW, GC, GI, and GB is either potential L (sometimes simply written as "L") or potential H (sometimes simply written as "H") which is higher than potential L. In this case, the potential difference between potential H and potential L is greater than the threshold voltage of the transistor. Potential L or potential H may be, for example, the ground potential.

[0092] Furthermore, each of the wires ANO, CATH, VL1, VL2, and VL3 functions as a power line. Here, a potential Ovss (sometimes simply written as "Ovss") is applied to each of the wires CATH, VL1, and VL3. The potential Ovss may be the same as the potential L. A potential Ovdd (sometimes simply written as "Ovdd"), which is greater than the potential Ovss, is applied to each of the wires ANO and VL2. The potential Ovdd may be the same as the potential H.

[0093] Furthermore, a signal may be supplied to at least one of the wires VL1, VL2, and VL3. In other words, at least one of the wires VL1, VL2, and VL3 can also function as a signal line.

[0094] Furthermore, wiring SL functions as a signal line. Wiring SL is supplied with a potential based on the image signal. The potential based on the image signal is assumed to be the potential between potential H and potential L.

[0095] Furthermore, even if a timing chart illustrates each period with the same length for clarity, the actual lengths of each period may differ.

[0096] The timing chart shown in Figure 5 illustrates the potential applied to each wire during each period of operation. It also shows the change in potential at each node.

[0097] Furthermore, Figures 6 through 10 show the potential of each wire and node at each point in time during operation. In these figures, symbols indicating potential (also called potential symbols), such as "H", "L", "Ovdd", or "Ovss", may be written adjacent to each wire, enclosed in a line. In particular, when a change in potential occurs, the line may be made thicker, and when the device is in a floating state, the line may be made dotted. In addition, an "×" symbol may be superimposed on an off-state transistor. Furthermore, a dashed arrow may be added along each wire to indicate the direction of current flow (which can also be said to be the direction in which positive charges move).

[0098] In addition, the threshold voltage of transistor M11 may be denoted as Vt11, the threshold voltage of transistor M12 as Vt12, the threshold voltage of transistor M13 as Vt13, the threshold voltage of transistor M14 as Vt14, the threshold voltage of transistor M15 as Vt15, the threshold voltage of transistor M16 as Vt16, the threshold voltage of transistor M17 as Vt17, and the threshold voltage of transistor M18 as Vt18.

[0099] In this case, the threshold voltage of the n-type transistor (corresponding to Vt15 to Vt17, respectively) is greater than 0V, and the threshold voltage of the p-type transistor (corresponding to Vt11 to Vt14 and Vt18, respectively) is less than 0V.

[0100] Immediately before period T11, potential L is applied to wirings EM1, EM2, GC, and GI. Also, potential H is applied to wirings GW and GB. Therefore, transistors M11, M15, M16, and M18 are in the off state, and transistors M12 and M14 are in the on state. In period T11, the potential of node ND1 is "Vda". Also, the potential of node ND2 is "Ovdd". As a result, "Vda" is applied as the gate voltage of transistor M13, and a current based on this gate voltage is supplied to the light-emitting element LD, causing the light-emitting element LD to emit light. The potentials of each wiring at this time are shown in Figure 6. In the following explanation, unless otherwise specified, the state immediately before is maintained.

[0101] During period T11, a potential H is applied to wirings EM1, EM2, and GI. This turns off transistors M12 and M14, and turns on transistor M16. As a result, no current flows between the anode and cathode of the light-emitting element LD, and the light-emitting element LD stops emitting light. Also, node ND2 becomes floating. Furthermore, the potential of wiring VL1 is supplied to node ND1 via transistor M16, and the potential of node ND1 changes from "Vda" to "Ovss". The potentials of each wiring at this time are shown in Figure 7.

[0102] During period T12, potential L is applied to wiring GW, wiring GI, and wiring GB, and potential H is applied to wiring GC. As a result, transistor M16 turns off, and transistors M11, M15, and M18 turn on. Also, wiring SL is given a potential "Vd1" corresponding to the image signal. Furthermore, wiring VL2 is given a potential of ">Ovdd", and current I50 flows from wiring VL2 through transistors M17, M11, M13, and M15 to one terminal (node ​​ND1) of the capacitive element C11. The potentials of each wiring at this time are shown in Figure 8.

[0103] Here, a potential of "Vd1" is applied to the gate of transistor M17, and a potential of "Ovdd" is applied to the back gate. At this time, the effective gate voltage of transistor M17, taking into account the back gate voltage, can be described as "Vd1 + K × Ovdd". Hereinafter, K is a coefficient determined according to the structure of transistor M17, and when "K = 1", the back gate functions equally with the gate. In particular, in this embodiment, "K = 1" is preferable. For example, in the configuration of transistor M17, "K = 1" can be achieved by making the equivalent oxide thickness (EOT) of the insulating layer between the gate electrode and the semiconductor layer (also called the "gate insulating layer") equal to the EOT of the insulating layer between the back gate electrode and the semiconductor layer (also called the "back gate insulating layer"). That is, K can be expressed as the ratio of the EOT of the gate insulating layer to the EOT of the back gate insulating layer.

[0104] Furthermore, the potential of node ND2 changes from "Ovdd" to "Vd1 + K × Ovdd - Vt17" due to the current I50 flowing from wiring VL2. Vt17 is the threshold voltage of transistor M17. Also, "Vd1 + K × Ovdd - Vt17" is the potential of either the source or drain of transistor M17 when it is in the off state.

[0105] Furthermore, the potential of node ND1 changes from "L" to "Vd1 + K × 0vdd - Vt17 + Vt13" due to the current I50 flowing from wiring VL2. Vt13 is the threshold voltage of transistor M13. Also, "Vd1 + K × 0vdd - Vt17 + Vt13" is the potential of the other side of the source or drain of transistor M13 when transistor M13 is in the off state.

[0106] When transistor M13 is turned off, note ND1 becomes floating, and "Vd1 - Vt17 + K × 0vdd + Vt13" is held at node ND1. The potentials of each wire at this time are shown in Figure 9.

[0107] Furthermore, during period T12, transistor M18 is ON, so current I51 flows. As a result, the "Ovss" voltage of wiring VL3 is supplied to the anode of the light-emitting element LD via transistor M18. By setting the potential of the anode of the light-emitting element LD to "Ovss", the voltage applied to the light-emitting element LD can be initialized (also called anode voltage initialization or anode reset). This suppresses the influence of past display history and improves the display quality of the display device.

[0108] During period T13, potential L is applied to wires EM1, EM2, and GC, respectively. Also, potential H is applied to wires GW and GB, respectively. Therefore, transistors M11, M15, M16, and M18 are in the off state, and transistors M12 and M14 are in the on state. When transistor M12 is turned on, the potential at node ND2 becomes "Ovdd". The potential at node ND1 (the gate potential of transistor M13) remains "Vd1 - Vt17 + K × Ovdd + Vt13". Therefore, the gate-source voltage of transistor M13 can be expressed as "Vd1 - Vt17 + Vt13 + Ovdd(K-1)". Furthermore, in the equation for the gate-source voltage of transistor M13, the Vt13 term becomes zero. That is, a current independent of Vt13 can be supplied to the light-emitting element LD. Furthermore, a current based on the gate-source voltage of transistor M13 is supplied to the light-emitting element LD, causing the light-emitting element LD to emit light.

[0109] Furthermore, when "K = 1", the "Ovdd(K-1)" term becomes zero. That is, the gate-source voltage is independent of "Ovdd" and is a voltage from which the effect of IR drop is excluded. Note that the semiconductor device 100A in one embodiment of the present invention can mitigate the effect of IR drop even when K of transistor M17 is not 1. On the other hand, if K deviates too far from 1, it becomes more susceptible to the effect of IR drop. For this reason, K is preferably between 0.9 and 1.1, and more preferably between 0.95 and 1.05. Note that the potential of each wiring during period T13 is shown in Figure 10.

[0110] Furthermore, a semiconductor device 100A according to one aspect of the present invention has a configuration in which the wiring ANO is connected to the other terminal of the capacitive element C11. With this configuration, even if "Ovdd" fluctuates during the light emission period, the potentials of the source and node ND1 of the p-type transistor M13 fluctuate equally, so the gate voltage of transistor M13 can be kept constant. Therefore, even if an IR drop occurs during the light emission period, fluctuations in light emission brightness are less likely to occur, and stable light emission brightness can be achieved.

[0111] As described above, the semiconductor device 100A according to one aspect of the present invention can eliminate or mitigate the effects of IR drop. Therefore, it is possible to improve the display quality of the display device and reduce power consumption.

[0112] [Modified Version] Figure 11 is a circuit diagram illustrating a modified version of the semiconductor device 100A shown in Figure 4. The semiconductor device 100A shown in Figure 11 differs from the semiconductor device 100A shown in Figure 4 in that it has a switch S11 instead of transistor M11, a switch S12 instead of transistor M12, a switch S14 instead of transistor M14, a switch S15 instead of transistor M15, a switch S16 instead of transistor M16, and a switch S18 instead of transistor M18.

[0113] Thus, one aspect of the present invention may have a configuration in which at least some of the transistors constituting the semiconductor device 100A are replaced with transistors that function as switches.

[0114] Furthermore, at least a portion of the modified examples of the semiconductor device 100A described above, whether illustrated or not, can be applied to the semiconductor device 100A shown in Figures 3 and 4.

[0115] Furthermore, the semiconductor devices 100 and 100A described above, whether illustrated or not, can solve the problem of providing at least a novel semiconductor device simply by their circuit configuration.

[0116] Furthermore, one aspect of the present invention includes a configuration in which at least one of the gate, source, and drain of one or more transistors is either not connected to anything or connected to any wiring. Furthermore, one aspect of the present invention includes a configuration in which one or more wirings are either not input to anything or are input to any signal or potential.

[0117] <Example of Display Device Configuration> Next, a display device according to one aspect of the present invention will be described with reference to the drawings. At least a part of the semiconductor device according to one aspect of the present invention can be used in the display device.

[0118] Figure 12A is a block diagram illustrating an example of the configuration of a display device according to one aspect of the present invention.

[0119] As shown in Figure 12A, the display device 160 includes a pixel section 162, a gate driver section 163, and a source driver section 164. The pixel section 162 has, for example, a plurality of pixels 161 arranged in a matrix of m rows and n columns (where m is an integer of 2 or more, and n is an integer of 2 or more).

[0120] Pixel 161 may include a functional element. Here, for example, if the functional element is a display element such as a liquid crystal element and a light-emitting element, the display device 160 has the function of a display device (sometimes called an output device). Also, for example, if the functional element is a light-receiving element, the display device 160 has the function of an imaging device (sometimes called an input device). Note that pixel 161 may include both a display element and a light-receiving element. In this case, the display device 160 has the function of both a display device and an imaging device (sometimes called an input / output device).

[0121] In Figure 12A, the pixel 161 located in the first row and first column is shown as pixel 161[1,1], the pixel 161 located in the first row and nth column is shown as pixel 161[1,n], the pixel 161 located in the m row and first column is shown as pixel 161[m,1], and the pixel 161 located in the m row and nth column is shown as pixel 161[m,n]. In some cases, the pixel 161 located in the u row and v column (where u is an integer between 1 and m, and v is an integer between 1 and n) is shown as pixel 161[u,v]. When describing matters common to multiple pixels 161, they may not be described with identification codes such as "[u,v]".

[0122] Furthermore, the display device 160 has m gate lines 165, each arranged in parallel, and whose potential is controlled by a circuit included in the gate driver unit 163. The potential of one gate line 165 is supplied to n pixels 161 arranged in the row direction. Depending on the configuration of the pixels 161, a configuration in which multiple wires are included per gate line 165 is also possible.

[0123] Furthermore, the display device 160 has n source lines 166, each arranged in parallel, and whose potential is controlled by a circuit included in the source driver unit 164. The potential of one source line 166 is supplied to m pixels 161 arranged in the column direction. Depending on the configuration of the pixels 161, each source line 166 may be configured to include multiple wires.

[0124] The circuit included in the gate driver unit 163 functions, for example, as a scan line drive circuit (sometimes called a gate line drive circuit, gate driver, scan driver, or low driver).

[0125] The circuit included in the source driver unit 164 functions, for example, as a signal line drive circuit (sometimes called a source line drive circuit, source driver, data driver, or column driver).

[0126] Figure 12B is a block diagram illustrating a modified version of the display device 160 shown in Figure 12A. The display device 160 shown in Figure 12B differs from the display device 160 shown in Figure 12A in that it has two gate driver units 163 arranged opposite each other via a pixel unit 162. In the configuration shown in Figure 12B, the potential of m gate lines 165 is controlled by the two gate driver units 163. With this configuration, for example, the actual wiring load (parasitic capacitance and parasitic resistance) can be reduced to 1 / 4 of the wiring load in the display device 160 shown in Figure 12A. Therefore, the display device 160 can be made faster, more detailed, higher resolution, narrower bezel, and larger.

[0127] In one aspect of the present invention, various transistors can be used as the transistors constituting the display device 160. For example, Si transistors may be used, OS transistors may be used, or both Si transistors and OS transistors may be used.

[0128] OS transistors can be freely arranged on a silicon substrate, for example, on which Si transistors are mounted, making integration easy. Furthermore, since OS transistors can be manufactured using the same manufacturing equipment as Si transistors, they can be produced at low cost.

[0129] Therefore, in the display device 160, for example, Si transistors containing part of a silicon substrate may be used for the transistors constituting the source driver unit 164, and OS transistors provided on a silicon substrate may be used for the transistors constituting the gate driver unit 163 and the pixel unit 162, respectively. Furthermore, OS transistors may be used for at least a portion of the transistors constituting the source driver unit 164, and Si transistors may be used for at least a portion of the transistors constituting the gate driver unit 163 and the pixel unit 162, respectively.

[0130] Furthermore, various circuits (which may include arithmetic circuits and memory circuits, etc.) for controlling the operation of the display device 160 may be provided using Si transistors that include a portion of the silicon substrate. Thus, in one aspect of the present invention, for example, an OS transistor is arranged on a silicon substrate on which Si transistors are provided, and a display element or light-receiving element is arranged on the layer on which the OS transistors are provided.

[0131] In one aspect of the present invention, at least a portion of the various semiconductor devices 100 and 100A described above can be used in the pixel 161. This makes it possible to improve the display quality of the display device and reduce power consumption.

[0132] It should be noted that one aspect of the present invention is not limited to the configuration examples and operation examples described in this embodiment. The configuration examples, operation examples, and corresponding drawings illustrated in this embodiment can be appropriately combined with other configuration examples, other operation examples, other drawings, and other embodiments described in this specification, etc., at least in part.

[0133] (Embodiment 2) This embodiment describes a transistor according to one aspect of the present invention. At least a part of the transistor according to one aspect of the present invention can be applied to the semiconductor device and display device shown in Embodiment 1 described above.

[0134] <Example of Transistor Configuration> Figure 13A is a top view of a transistor 200A that can be used in a semiconductor device according to one aspect of the present invention. Figure 13B is a cross-sectional view between A1 and A2 shown by a dashed line in Figure 13A. Figure 13C is a cross-sectional view between A3 and A4 shown by a dashed line in Figure 13A. Note that in the top view of Figure 13A, some elements have been omitted for clarity. Some elements may also be omitted in other top views.

[0135] The transistor 200A has an insulating layer 202 on an insulating layer 201, and a semiconductor layer 203 on the insulating layer 202. Furthermore, it has an insulating layer 204 on the insulating layer 202 and the semiconductor layer 203. It also has a conductive layer 205 on the insulating layer 204. The semiconductor layer 203 and the conductive layer 205 have overlapping regions via the insulating layer 204.

[0136] The semiconductor layer 203 has a region 203a that functions as either a source region or a drain region, a channel-forming region 203b, and a region 203c that functions as the other source region or drain region. In the semiconductor layer 203, the region that overlaps with the conductive layer 205 functions as the channel-forming region 203b. Therefore, the conductive layer 205 functions as the gate electrode of the transistor 200A. In addition, the insulating layer 204 functions as the gate insulating layer of the transistor 200A.

[0137] Furthermore, the length of the channel formation region 203b in the X direction is the channel length L of the transistor 200A (see Figure 13B). Also, the length of the channel formation region 203b in the Y direction is the channel width W of the transistor 200A (see Figure 13C).

[0138] Furthermore, an insulating layer 206 is provided on top of the insulating layer 204 and the conductive layer 205. In addition, an opening 207a is provided in the insulating layer 204 and the insulating layer 206 in the region overlapping with region 203a of the semiconductor layer 203. In addition, an opening 207b is provided in the insulating layer 204 and the insulating layer 206 in the region overlapping with region 203c of the semiconductor layer 203.

[0139] Furthermore, a conductive layer 208a is provided on the insulating layer 206 and within the opening 207a, and a conductive layer 208b is provided on the insulating layer 206 and within the opening 207b. The conductive layer 208a is in contact with region 203a of the semiconductor layer 203 at the bottom of the opening 207a. The conductive layer 208b is in contact with region 203c of the semiconductor layer 203 at the bottom of the opening 207b. Therefore, the conductive layer 208a functions as either the source electrode or the drain electrode of the transistor 200A, and the conductive layer 208b functions as either the source electrode or the drain electrode of the transistor 200A.

[0140] Furthermore, an insulating layer 209 is provided on top of the insulating layer 206 and the conductive layer 208 (conductive layer 208a and conductive layer 208b).

[0141] Figure 14A is a top view of transistor 200B, which can be used in a semiconductor device according to one aspect of the present invention. Transistor 200B is a modified example of transistor 200A. To reduce repetition in the explanation, the differences between transistor 200B and transistor 200A will be described primarily.

[0142] Figure 14B is a cross-sectional view between A1 and A2, shown by the dashed line in Figure 14A. Figure 14C is a cross-sectional view between A3 and A4, shown by the dashed line in Figure 14A.

[0143] Transistor 200B differs from transistor 200A in that it has a conductive layer 219 between the insulating layer 201 and the insulating layer 202. The conductive layer 219 functions as the back gate electrode of transistor 200B. Therefore, the conductive layer 219 has a region that overlaps with the channel formation region 203b. Furthermore, the conductive layer 219 may extend beyond the edge of the channel formation region 203b.

[0144] In a transistor with a back gate, the transistor's gate and back gate are positioned so as to sandwich the channel formation region of the semiconductor layer. The back gate can function similarly to the gate. When the gate is used to control the on and off states of the transistor, the potential of the back gate can be equal to that of the gate. Alternatively, it can be set to any potential.

[0145] For example, when turning on a transistor, supplying the potential to both the gate and the back gate to turn the transistor on increases the on-current compared to supplying it to only one. For instance, by directly connecting the gate and the back gate, it is possible to keep them at the same potential at all times. Furthermore, by controlling the back gate's potential independently of the gate's potential, the transistor's threshold voltage can be adjusted.

[0146] In Figure 13 or Figure 14, the region of the semiconductor layer 203 that overlaps with the conductive layer 205 functions as the channel formation region of the transistor (corresponding to the channel formation region 203b in Figures 13A to 13C, or Figures 14A to 14C). Therefore, the channel length of the transistor (corresponding to the channel length L in Figure 13B or Figure 14B) corresponds to the width of the conductive layer 205 in the direction in which the semiconductor layer 203 extends (corresponding to the X direction in Figures 13A to 13C, or Figures 14A to 14C) in the region in which the semiconductor layer 203 and the conductive layer 205 overlap each other. Also, the channel width of the transistor (corresponding to the channel length W in Figure 13C or Figure 14C) corresponds to the width of the semiconductor layer 203 in the direction in which the conductive layer 205 extends (corresponding to the Y direction in Figures 13A to 13C, or Figures 14A to 14C) in the region in which the semiconductor layer 203 and the conductive layer 205 overlap each other. Furthermore, the area of ​​the channel formation region of the transistor corresponds to the area where the semiconductor layer 203 and the conductive layer 205 overlap each other.

[0147] <Transistor Components> Next, we will describe the components that can be used in transistors 200A and 200B.

[0148] [Substrate] When a transistor is mounted on a substrate, there are no major restrictions on the material used for the substrate. The material used for the substrate can be determined according to the purpose, taking into consideration factors such as the presence or absence of light transmission and heat resistance sufficient to withstand heat treatment. For example, an insulating substrate, a semiconductor substrate, or a conductive substrate may be used. As an insulating substrate, for example, glass substrates such as barium borosilicate glass and aluminoborsilicate glass, ceramic substrates, quartz substrates, sapphire substrates, stabilized zirconia substrates (such as yttria-stabilized zirconia substrates) can be used. In addition, semiconductor substrates, flexible substrates, resin substrates, etc. may be used as the substrate.

[0149] Examples of semiconductor substrates include semiconductor substrates made of silicon or germanium, or compound semiconductor substrates made of silicon carbide, silicon germanium, gallium arsenide, indium phosphide, zinc oxide, or gallium oxide. Furthermore, there are semiconductor substrates having insulating regions within the above semiconductor substrate, such as SOI (Silicon On Insulator) substrates. In addition, the semiconductor substrate may be a single-crystal semiconductor or a polycrystalline semiconductor.

[0150] Examples of conductive substrates include graphite substrates, metal substrates, alloy substrates, and conductive resin substrates. Alternatively, there are substrates containing metal nitrides and substrates containing metal oxides. Furthermore, there are substrates in which a conductive layer or semiconductor layer is provided on an insulating substrate, substrates in which a conductive layer or insulating layer is provided on a semiconductor substrate, and substrates in which a semiconductor layer or insulating layer is provided on a conductive substrate.

[0151] Examples of materials that can be used for flexible substrates or resin substrates include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile, acrylic resin, polyimide, polymethyl methacrylate, polycarbonate (PC), polyethersulfone (PES), polyamide (nylon, aramid, etc.), polysiloxane, cycloolefin resin, polystyrene, polyamide-imide, polyurethane, polyvinyl chloride, polyvinylidene chloride, polypropylene, polytetrafluoroethylene (PTFE), ABS resin, and cellulose nanofiber.

[0152] By using the above material as a substrate, a lightweight semiconductor device can be provided. Furthermore, by using the above material as a substrate, a semiconductor device that is resistant to impact can be provided. Furthermore, by using the above material as a substrate, a semiconductor device that is less prone to damage can be provided. In addition, devices on which elements are provided on these substrates may also be used. Elements provided on the substrate include capacitive elements, resistive elements, switch elements, light-emitting elements, and memory elements.

[0153] [Insulating Layer] An inorganic insulating film can be used for the insulating layer (insulating layer 202, insulating layer 204, insulating layer 206, insulating layer 209, etc.). Examples of inorganic insulating films include oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, tantalum oxide film, cerium oxide film, gallium zinc oxide film, and hafnium aluminate film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxide nitride film, aluminum oxide nitride film, gallium oxide nitride film, yttrium oxide nitride film, and hafnium oxide nitride film. Examples of nitride oxide insulating films include silicon oxide nitride film and aluminum oxide nitride film. In addition, an organic insulating film may be used for the insulating layer of the semiconductor device.

[0154] In this specification, "oxide nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content. The content of each element can be measured using methods such as Rutherford backscattering (RBS).

[0155] For example, as transistors become smaller and more integrated, thinning of the gate insulating film can lead to problems such as leakage current. By using materials with a high relative permittivity (high-k) for insulating layers that function as gate insulating films, such as insulating layer 204 and insulating layer 202, it becomes possible to lower the voltage during transistor operation while maintaining the physical film thickness. It also becomes possible to thin the equivalent oxide film thickness (EOT) of the gate insulating film. Furthermore, by using materials with a high relative permittivity for insulating layers that function as dielectrics for capacitive elements, the capacitance per unit area can be increased. On the other hand, by using materials with a low relative permittivity for insulating layers that function as interlayer films, parasitic capacitance between wiring can be reduced. Therefore, materials can be selected according to the function of the insulating layer. It should be noted that materials with a low relative permittivity also have high dielectric strength.

[0156] Examples of materials with a high dielectric constant include aluminum oxide, gallium oxide, hafnium oxide, tantalum oxide, zirconium oxide, hafnium-zirconium oxide, oxides containing aluminum and hafnium, oxides containing aluminum and hafnium, oxides containing silicon and hafnium, oxides containing silicon and hafnium, and nitrides containing silicon and hafnium.

[0157] Examples of materials with a low dielectric constant include inorganic insulating materials such as silicon oxide, silicon oxide-nitride, and silicon nitride-oxide, as well as resins such as polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, and acrylic resin. Other inorganic insulating materials with a low dielectric constant include, for example, silicon oxide with added fluorine, silicon oxide with added carbon, and silicon oxide with added carbon and nitrogen. Also, for example, silicon oxide with vacancies can be used. These silicon oxides may contain nitrogen.

[0158] [Conductive Layers] For the conductive layers (conductive layer 205, conductive layer 208, conductive layer 219, etc.) used in transistors 200A and 200B, it is preferable to use metal elements selected from aluminum, chromium, copper, silver, gold, platinum, zinc, tantalum, nickel, titanium, iron, cobalt, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, lanthanum, etc., or alloys containing the above metal elements, or alloys combining the above metal elements. As alloys containing the above metal elements, nitrides of the alloy or oxides of the alloy may be used. For example, it is preferable to use tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel, etc. Alternatively, highly conductive semiconductors such as polycrystalline silicon containing impurity elements like phosphorus, or silicides such as nickel silicide, may be used.

[0159] Furthermore, it is preferable to use conductive materials that are resistant to oxidation, conductive materials that have a function to suppress oxygen diffusion, or materials that maintain conductivity even when absorbing oxygen. Examples of such materials include nitrogen-containing conductive materials such as tantalum-containing nitrides, titanium-containing nitrides, molybdenum-containing nitrides, tungsten-containing nitrides, ruthenium-containing nitrides, tantalum and aluminum-containing nitrides, or titanium and aluminum-containing nitrides. Examples of oxygen-containing conductive materials include oxides containing ruthenium oxide, strontium and ruthenium, or oxides containing lanthanum and nickel. Examples of materials containing metallic elements such as titanium, tantalum, or ruthenium are also included. Examples of oxygen-containing conductive materials include materials containing tungsten oxide and indium oxide, materials containing titanium oxide and indium oxide, indium tin oxide (also known as ITO), indium tin oxide containing titanium oxide, indium tin oxide containing silicon oxide (also known as ITSO), indium zinc oxide (also known as IZO®), and indium zinc oxide containing tungsten oxide. In this specification, a conductive layer formed using an oxygen-containing conductive material may be referred to as an oxide conductive layer.

[0160] Furthermore, it is preferable to use a conductive material with high conductivity, such as one mainly composed of tungsten, copper, or aluminum.

[0161] Furthermore, multiple conductive layers formed from the above materials may be used in a laminated structure. For example, a laminated structure may be formed by combining a material containing the above-mentioned metal element with a conductive material containing oxygen. Alternatively, a laminated structure may be formed by combining a material containing the above-mentioned metal element with a conductive material containing nitrogen. Alternatively, a laminated structure may be formed by combining a material containing the above-mentioned metal element with a conductive material containing oxygen and a conductive material containing nitrogen.

[0162] For example, in transistor 200A or transistor 200B, when an oxide semiconductor, which is a type of metal oxide, is used for the semiconductor layer 203, a laminated structure combining the material containing the aforementioned metal element and a conductive material containing oxygen may be used for the conductive layer 205, which functions as a gate electrode. In this case, the conductive material containing oxygen may be provided on the semiconductor layer 203 side. By providing the conductive material containing oxygen on the semiconductor layer 203 side, oxygen detached from the conductive material is more easily supplied to the channel formation region of the semiconductor layer 203.

[0163] Furthermore, when an oxide semiconductor, which is a type of metal oxide, is used as the semiconductor layer 203, the conductive layer 208 is a conductive layer that is in contact with the semiconductor layer 203. Therefore, the conductive layer 208 may be made of a conductive material that is resistant to oxidation, a conductive material that maintains low electrical resistance even when oxidized, a conductive metal oxide (also called an oxide conductor), or a conductive material that has the function of suppressing the diffusion of oxygen. Examples of such conductive materials include conductive materials containing nitrogen and conductive materials containing oxygen. This makes it possible to suppress a decrease in the conductivity of the conductive layer 208.

[0164] By using an oxygen-containing conductive material as the conductive layer 208, conductivity can be maintained even if the conductive layer 208 absorbs oxygen. For example, even when an insulating layer containing excess oxygen is used as the insulating layer in contact with the conductive layer 208, the conductive layer 208 can maintain its conductivity, making it suitable. Examples of materials that can be used as the conductive layer 208 include ITO, ITSO, and IZO (registered trademarks).

[0165] [Semiconductor layer] As the semiconductor layer (semiconductor layer 203, etc.), single-crystal semiconductors, polycrystalline semiconductors, microcrystalline semiconductors, or amorphous semiconductors can be used individually or in combination.

[0166] As the semiconductor layer, a semiconductor composed of a single element or a compound semiconductor may be used. Examples of semiconductors composed of single elements include silicon and germanium. Examples of compound semiconductors include gallium arsenide, silicon carbide, and silicon germanium. Other examples of compound semiconductors include organic semiconductors and nitride semiconductors. Oxide semiconductors are also a type of compound semiconductor. These semiconductor materials may contain impurities as dopants.

[0167] When silicon is used as a semiconductor layer, examples of silicon that can be used for the semiconductor layer include single-crystal silicon, polycrystalline silicon, microcrystalline silicon, and amorphous silicon. As an example of polycrystalline silicon, low-temperature polysilicon (LTPS) is used.

[0168] For example, in transistor 200A or transistor 200B, by using silicon for the semiconductor layer 203 and including phosphorus or arsenic as an n-type dopant in region 203a and channel formation region 203b of the semiconductor layer 203, it is possible to make the transistor function as an n-type transistor. Alternatively, by including boron as a p-type dopant in region 203a and channel formation region 203b of the semiconductor layer 203, it is possible to make the transistor function as a p-type transistor. When both n-type and p-type dopants are included in region 203a and channel formation region 203b of the semiconductor layer 203, the conductivity type with the higher dopant concentration is more likely to manifest.

[0169] Further, as the semiconductor layer, a two-dimensional material that functions as a semiconductor may be used. The two-dimensional material is also called a layered material and is a general term for a group of materials having a layered crystal structure. The layered crystal structure is a structure in which layers formed by covalent bonds or ionic bonds are stacked via a bond weaker than covalent bonds or ionic bonds, such as van der Waals bonds. The layered material has high conductivity within a unit layer, that is, high two-dimensional conductivity. By using a material that functions as a semiconductor and has high two-dimensional conductivity for the semiconductor layer, a transistor with a large on-current can be provided.

[0170] Examples of the layered material include graphene, silicene, chalcogenides, etc. Chalcogenides are compounds containing chalcogens (elements belonging to Group 16). Further, examples of chalcogenides include transition metal chalcogenides, Group 13 chalcogenides, etc. Specific examples of transition metal chalcogenides applicable as the semiconductor layer include molybdenum sulfide (typically MoS ２ ), molybdenum selenide (typically MoSe ２ ), molybdenum telluride (typically MoTe ２ ), tungsten sulfide (typically WS ２ ), tungsten selenide (typically WSe ２ ), tungsten telluride (typically WTe ２ ), hafnium sulfide (typically HfS ２ ), hafnium selenide (typically HfSe ２ ), zirconium sulfide (typically ZrS ２ ), zirconium selenide (typically ZrSe ２ ), etc.

[0171] Further, an oxide semiconductor, which is a kind of metal oxide, may be used as the semiconductor layer. At this time, the band gap of the metal oxide is preferably 2.0 eV or more, and more preferably 2.5 eV or more. By using a metal oxide having a larger band gap than silicon as the semiconductor layer, the off-current of the transistor can be significantly reduced. Since the OS transistor has a small off-current, the power consumption of the semiconductor device can be reduced.

[0172] Furthermore, in a transistor using an oxide semiconductor for the semiconductor layer, it is preferable that the channel formation region of the transistor has fewer oxygen vacancies or lower impurity concentrations (e.g., concentrations of hydrogen, nitrogen, and metal elements) than the source region and drain region. Also, hydrogen near oxygen vacancies can cause V Ｏ Because H (a defect where hydrogen fills an oxygen vacancy) can be formed and electrons that act as carriers can be generated, V Ｏ It is also preferable that H is low. Thus, the channel formation region of the transistor is a high-resistance region with a low carrier concentration. Therefore, the channel formation region of the transistor can be said to be type i (intrinsic) or substantially type i.

[0173] Furthermore, the source and drain regions of the transistor have more oxygen vacancies than the channel formation region. Ｏ It is preferable that there is a high amount of H or a high impurity concentration. Thus, the source region and drain region of the transistor have a higher carrier concentration and are low-resistance n-type regions than the channel formation region.

[0174] <Oxide Semiconductor Layer> Next, an oxide semiconductor layer that can be used as a semiconductor layer of a transistor according to one aspect of the present invention will be described.

[0175] In one aspect of the present invention, the oxide semiconductor layer preferably has a crystalline metal oxide. Examples of structures of the crystalline metal oxide include CAAC (c-axis aligned crystal) structure, polycrystalline (Poly-crystal) structure, microcrystalline structure, and nanocrystalline (nc: nano-crystal) structure. By using a crystalline metal oxide in the oxide semiconductor layer, the defect level density in the oxide semiconductor layer can be reduced. Therefore, the reliability of a transistor using the oxide semiconductor layer in one aspect of the present invention can be improved, and the reliability of a semiconductor device on which such a transistor is mounted can be improved.

[0176] In one aspect of the present invention, the oxide semiconductor layer preferably has a metal oxide having a CAAC structure. A CAAC structure is a crystalline structure in which a plurality of microcrystals (typically a plurality of microcrystals having a hexagonal crystal structure) are oriented along the c axis, and in the a-b plane, the plurality of microcrystals are linked together without orientation. Furthermore, when a cross-section of an oxide semiconductor layer having a CAAC structure is observed using a high-resolution transmission electron microscope (TEM) image, it can be confirmed that metal atoms are arranged in layers in the crystalline portion. Therefore, an oxide semiconductor layer having a CAAC structure can also be said to have a structure having a layered crystalline portion.

[0177] The crystallinity of the oxide semiconductor layer can be analyzed, for example, by X-ray diffraction (XRD), TEM, or electron diffraction (ED). Alternatively, a combination of these methods may be used for the analysis.

[0178] The crystallinity of the semiconductor material in the oxide semiconductor layer is not particularly limited. For example, the oxide semiconductor layer may include one or more amorphous semiconductors (semiconductors with an amorphous structure), single-crystal semiconductors (semiconductors with a single-crystal structure), or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in part). The crystallinity of the oxide semiconductor layer may suppress the degradation of transistor characteristics.

[0179] Examples of metal oxides according to one aspect of the present invention include indium oxide, gallium oxide, and zinc oxide. Furthermore, it is preferable that the metal oxide according to one aspect of the present invention contains at least indium (In). Furthermore, it is preferable that the metal oxide contains at least indium (In) or zinc (Zn). Furthermore, it is preferable that the metal oxide has two or three elements selected from indium, element M, and zinc. Element M is a metal element or metalloid with a high bond energy with oxygen, for example, a metal element or metalloid with a higher bond energy with oxygen than indium. Specific examples of element M include aluminum, gallium, tin, yttrium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zirconium, molybdenum, hafnium, tantalum, tungsten, lanthanum, cerium, neodymium, magnesium, calcium, strontium, barium, boron, silicon, germanium, and antimony. The element M present in the metal oxide is preferably one or more of the above elements, more preferably one or more selected from aluminum, gallium, tin, and yttrium, and even more preferably gallium. When the element M present in the metal oxide is gallium, the metal oxide according to one aspect of the present invention preferably has one or more selected from indium, gallium, and zinc. In this specification, metal elements and metalloid elements are sometimes collectively referred to as "metal elements," and the "metal elements" described in this specification may include metalloid elements.

[0180] Examples of metal oxides according to one aspect of the present invention include indium oxide. Also, examples of metal oxides according to one aspect of the present invention include indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium gallium oxide (In-Ga oxide), indium gallium aluminum oxide (In-Ga-Al oxide), indium gallium tin oxide (In-Ga-Sn oxide, also written as IGTO), gallium zinc oxide (Ga-Zn oxide, also written as GZO), aluminum zinc oxide (Al-Zn oxide, also written as AZO), and indium aluminum zinc oxide ( Indium-Al-Zn oxide (also written as IAZO), indium tin zinc oxide (also written as In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide, also written as IGZTO), indium gallium aluminum zinc oxide (In-Ga-Al-Zn oxide, also written as IGAZO or IAGZO), indium tungsten oxide (In-W oxide, also written as IWO), etc. can be used. Alternatively, indium tin oxide containing silicon oxide (also called ITSO), gallium tin oxide (Ga-Sn oxide), aluminum tin oxide (Al-Sn oxide), etc. can be used.

[0181] By increasing the ratio of indium atoms to the sum of all metal elements in the metal oxide (also known as the indium (In) content), transistors can achieve high on-current and high frequency characteristics.

[0182] The metal oxide may contain one or more metal elements with higher periodic numbers in the periodic table, instead of indium. Alternatively, the metal oxide may contain one or more metal elements with higher periodic numbers in the periodic table, in addition to indium. The greater the overlap of the metal element orbitals, the greater the carrier conduction in the metal oxide tends to be. Therefore, including metal elements with higher periodic numbers in the periodic table can sometimes increase the field-effect mobility of the transistor. Examples of metal elements with higher periodic numbers in the periodic table include metal elements belonging to the 5th period and metal elements belonging to the 6th period. Specifically, examples of such metal elements include yttrium, zirconium, silver, cadmium, tin, antimony, barium, lead, bismuth, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, and europium. Lanthanum, cerium, praseodymium, neodymium, promethium, samarium, and europium are called light rare earth elements.

[0183] Furthermore, metal oxides may contain one or more nonmetallic elements. The presence of nonmetallic elements in metal oxides can sometimes increase the field-effect mobility of transistors. Examples of nonmetallic elements include carbon, nitrogen, phosphorus, sulfur, selenium, fluorine, chlorine, bromine, and hydrogen.

[0184] Furthermore, by increasing the ratio of zinc atoms to the sum of the total number of atoms of all metal elements contained in the metal oxide, a highly crystalline metal oxide is obtained, which suppresses the diffusion of impurities in the metal oxide. Therefore, fluctuations in the electrical properties of the transistor are suppressed, and reliability can be improved.

[0185] Furthermore, by increasing the ratio of element M atoms to the sum of the total number of atoms of all metal elements contained in the metal oxide, the formation of oxygen vacancies in the metal oxide can be suppressed. Therefore, carrier generation caused by oxygen vacancies is suppressed, resulting in a transistor with low off-current. In addition, fluctuations in the electrical characteristics of the transistor are suppressed, and reliability can be improved.

[0186] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0187] (Embodiment 3) In this embodiment, an example of a layout when the transistor shown in Embodiment 2 is applied to the semiconductor device shown in Embodiment 1 described above will be explained. Here, the layout of the semiconductor device 100A shown in Figure 4 will be explained.

[0188] <Layout Example> Figure 15 is a plan view showing an example of a layout when transistor 200A shown in Figure 13 and transistor 200B shown in Figure 14 are applied as transistors constituting the semiconductor device 100A shown in Figure 4 above. Figure 16A is a cross-sectional view between A1 and A2 shown by the dashed line in Figure 15. Figure 16B is a cross-sectional view between A3 and A4 shown by the dashed line in Figure 15.

[0189] Figure 15 shows conductive layer bg01, which corresponds to conductive layer 219 between insulating layer 201 and insulating layer 202. It also shows semiconductor layers ac11, ac12, ac13, ac14, ac15, ac16, and ac18, which correspond to semiconductor layer 203 on insulating layer 211. It also shows semiconductor layer ac17, which corresponds to semiconductor layer 203 between insulating layer 202 and insulating layer 204. It also shows conductive layers ge01, ge02, ge03, ge04, and ge05, which correspond to conductive layer 205 on insulating layer 202. It also shows conductive layers ge06 and ge07, which correspond to conductive layer 205 on insulating layer 204. Furthermore, the conductive layers me01, me02, me03, me04, me05, me06, me07, me08, me09, me10, me11, me12, and me13, which correspond to the conductive layer 208 on the insulating layer 206, are also shown. Additionally, the conductive layers sm01, sm02, sm03, and sm04, which are conductive layers on the insulating layer 209, are also shown.

[0190] Semiconductor layer ac11 has a region that functions as a channel formation region for transistor M11. Semiconductor layer ac12 has a region that functions as a channel formation region for transistor M12. Semiconductor layer ac13 has a region that functions as a channel formation region for transistor M13. Semiconductor layer ac14 has a region that functions as a channel formation region for transistor M14. Semiconductor layer ac15 has a region that functions as a channel formation region for transistor M15. Semiconductor layer ac16 has a region that functions as a channel formation region for transistor M16. Semiconductor layer ac17 has a region that functions as a channel formation region for transistor M17. Semiconductor layer ac18 has a region that functions as a channel formation region for transistor M18.

[0191] Conductive layer ge01 has a region that functions as the gate of transistor M18 and a region that functions as wiring GB. Conductive layer ge02 has a region that functions as the gate of transistor M12 and a region that functions as the gate of transistor M14 and a region that functions as wiring EM1 and a region that functions as wiring EM2. Conductive layer ge03 has a region that functions as the gate of transistor M13 and a region that functions as one terminal of capacitive element C11. Conductive layer ge04 has a region that functions as the gate of transistor M11 and a region that functions as wiring GW. Conductive layer ge05 has a region that functions as the gate of transistor M15 and a region that functions as wiring GC. Conductive layer ge06 has a region that functions as the gate of transistor M17. Conductive layer ge07 has a region that functions as the gate of transistor M16 and a region that functions as wiring GI. Conductive layer bg01 has a region that functions as the back gate of transistor M17.

[0192] Conductive layer me01 has a region that functions as wiring VL3 and a region that functions as the other source or drain of transistor M18. Conductive layer me02 has a region that functions as one source or drain of transistor M18 and a region that functions as the other source or drain of transistor M14. Conductive layer me03 has a region that functions as the other source or drain of transistor M14 and a region that functions as wiring ANO. Conductive layer me04 has a region that functions as the other source or drain of transistor M13, a region that functions as one source or drain of transistor M14 and a region that functions as one source or drain of transistor M15. Conductive layer me05 has a region that functions as one source or drain of transistor M11, a region that functions as one source or drain of transistor M12 and a region that functions as one source or drain of transistor M13. Conductive layer me06 has a region that functions as the other terminal of capacitive element C11 and a region that functions as wiring ANO. Conductive layer me07 has a region that functions as the other source or drain of transistor M15, and a region that functions as one source or drain of transistor M16. Conductive layer me08 has a region that functions as the other source or drain of transistor M11, and a region that functions as one source or drain of transistor M17. Conductive layer me09 has a region that functions as the back gate of transistor M17, and a region that functions as wiring ANO. Conductive layer me10 has a region that functions as the gate of transistor M17, and a region that functions as wiring SL. Conductive layer me11 has a region that functions as the other source or drain of transistor M17, and a region that functions as wiring VL2. Conductive layer me12 has a region that functions as the other source or drain of transistor M16, and a region that functions as wiring VL1. Conductive layer me13 has a region that functions as wiring VL2.

[0193] Conductive layer sm01 has a region that functions as wiring SL. Conductive layer sm02 has a region that functions as wiring ANO. Conductive layer sm03 has a region that functions as either the source or the drain of transistor M18, and a region that functions as the other source or the drain of transistor M14. Conductive layer sm04 has a region that functions as the other source or the drain of transistor M17, and a region that functions as wiring VL2.

[0194] Conductive layer me02 is connected to conductive layer sm03 at an opening in insulating layer 209. A conductive layer (not shown) is also provided on the upper surface of conductive layer me02, which serves as a plug for connecting to the light-emitting element LD. Conductive layer me03 is connected to conductive layer sm02 at an opening in insulating layer 209. Conductive layer me06 is connected to conductive layer sm02 at an opening in insulating layer 209. Conductive layer me07 is connected to conductive layer ge03 at an opening in insulating layer 206. Conductive layer me09 is connected to conductive layer sm02 at an opening in insulating layer 209. Conductive layer me09 is connected to conductive layer bg01 at openings in insulating layers 202, 204, and 206. Conductive layer me10 is connected to conductive layer sm01 at an opening in insulating layer 209. The conductive layer me10 is connected to the conductive layer ge06 through an opening in the insulating layer 206. The conductive layer me11 is connected to the conductive layer sm04 through an opening in the insulating layer 209. The conductive layer me13 is connected to the conductive layer sm04 through an opening in the insulating layer 209.

[0195] As shown in Figure 15, for example, in order to increase the saturation of transistor M13, which functions as a driving transistor, the channel length of transistor M13 may be made larger than the channel lengths of transistors M11, M12, M14, M15, M16, and M18. Alternatively, for example, in order to increase the on-current of transistors M12 and M14, which are provided in the current path of the current flowing to the light-emitting element LD, the channel lengths of transistors M12 and M14 may be made smaller than the channel length of transistor M13. This allows a stable current to flow through the light-emitting element LD, and the light emission intensity of the light-emitting element LD can be stabilized. Therefore, the light emission brightness of the display device can be stabilized.

[0196] Furthermore, in order to reduce the gate capacitance of transistors M11, M12, M14, M15, M16, and M18, which function as switches, the area of ​​the channel formation region (corresponding to channel length × channel width) of each transistor M11, M12, M14, M15, M16, and M18 may be made smaller than the area of ​​the channel formation region of transistor M11. This makes it possible to improve the operating speed and resolution of the display device.

[0197] Furthermore, as shown in Figure 15, it is preferable to increase the channel length of transistor M17 in order to reduce threshold value variation of transistor M17, which functions as an amplifying transistor. For example, it is preferable to make the channel length of transistor M17 larger than the channel lengths of transistors M13, M15, and M16. It is also preferable to increase the channel width of transistor M17 in order to keep the ratio of channel length to channel width constant. For example, it is preferable to make the channel width of transistor M17 larger than the channel widths of transistors M13, M15, and M16. This ensures that the image signal is transmitted reliably.

[0198] Furthermore, although not shown in the figures, a capacitive element may be configured such that, for example, a portion of the insulating layer 204 and insulating layer 206 is made of dielectric material, and a portion of the semiconductor layer 203 and conductive layer 208 is made of a pair of terminals. Alternatively, for example, a conductive layer (not shown) may be provided between the insulating layer 201 and insulating layer 202, a portion of the insulating layer 202 and insulating layer 204 may be made of dielectric material, and a portion of the conductive layer (not shown) and conductive layer 205 may be made of a pair of terminals. Alternatively, for example, a conductive layer (not shown) may be provided between the insulating layer 201 and insulating layer 202, a portion of the insulating layer 202 may be made of dielectric material, and a portion of the conductive layer (not shown) and semiconductor layer 203 may be made of a pair of terminals.

[0199] Furthermore, the technical concepts, configurations, operations, and effects described in this embodiment can be applied to various semiconductor devices, such as the semiconductor device 100 and semiconductor device 100A shown in Embodiment 1 above.

[0200] It should be noted that one aspect of the present invention is not limited to the configuration examples and operation examples described in this embodiment. The configuration examples, operation examples, and corresponding drawings illustrated in this embodiment can be appropriately combined with other configuration examples, other operation examples, other drawings, and other embodiments described in this specification, etc., at least in part.

[0201] (Embodiment 4) This embodiment describes a display device according to one aspect of the present invention.

[0202] Furthermore, at least a portion of the semiconductor device and display device described in Embodiment 1 above can be applied to a display device according to one aspect of the present invention and a module having said display device.

[0203] Here, examples of modules having the display device include modules to which a connector such as a flexible printed circuit board (FPC) or TCP (Tape Carrier Package) is attached, or modules on which an integrated circuit chip (IC chip) is mounted using a COG (Chip On Glass) method or a COF (Chip On Film) method.

[0204] <Example of Display Device Configuration> Figure 17A is a perspective view showing an example of the configuration of a display device 400 according to one aspect of the present invention.

[0205] The display device 400 has a configuration in which substrate 411 and substrate 451 are bonded together. In Figure 17A, substrate 411 is shown with a dashed line.

[0206] The display device 400 includes a display unit 452, a circuit unit 454a, a circuit unit 454b, a connection unit 457, and a wiring unit 458. Figure 17A shows an example in which an IC chip 456 and an FPC 459 are mounted on the display device 400. Therefore, the configuration shown in Figure 17A can also be described as a display module having a display device 400, an IC chip, and an FPC.

[0207] Furthermore, at least a portion of the display device 160 shown in Figures 12A and 12B of Embodiment 1 described above can be applied to the display device 400. For example, at least a portion of the gate driver unit 163 and source driver unit 164 shown in Embodiment 1 described above can be applied to the circuit unit 454a and circuit unit 454b. Also, for example, at least a portion of the pixels 161 shown in Embodiment 1 described above can be applied to the display unit 452. In other words, for example, at least a portion of the semiconductor device 100 or semiconductor device 100A shown in Embodiment 1 described above can be applied to the display unit 452.

[0208] Circuit section 454a includes, for example, a scan line drive circuit (also called a gate driver or scan driver). Circuit section 454b includes, for example, a signal line drive circuit (also called a source driver or data driver).

[0209] The wiring section 458 has the function of supplying signals and power to the display section 452, the circuit section 454a, and the circuit section 454b. These signals and power are input to the wiring section 458 from outside the display device 400 via the FPC 459, or from the IC chip 456 to the wiring section 458.

[0210] Figure 17A shows an example in which an IC chip 456 is provided on the substrate 451 using a COG (Camera-Owned Gauge) or COF (Camera-Owned Frame) method. The IC chip 456 can be, for example, an IC chip having one or both of a scan line drive circuit and a signal line drive circuit. The display device 400 and the display module may be configured without an IC chip. Alternatively, the IC chip may be mounted on an FPC (Flexible Printed Circuit) using a COF method or the like.

[0211] Furthermore, a scan line driving circuit may be configured in either or both of the IC chip 456 and the circuit section 454a. In this case, the IC chip 456 may be referred to as a gate driver IC chip. Alternatively, a signal line driving circuit may be configured in either or both of the IC chip 456 and the circuit section 454b. In this case, the IC chip 456 may be referred to as a source driver IC chip.

[0212] The display unit 452 is the area in the display device 400 that displays images, and has a plurality of pixels 455 arranged periodically. Figure 17A shows a magnified view of one pixel 455.

[0213] The pixel 455 shown in Figure 17A has a pixel 453R that emits red (R) light, a pixel 453G that emits green (G) light, and a pixel 453B that emits blue (B) light. Full-color display can be achieved by configuring one pixel 455 with pixels 453R, 453G, and 453B. Pixels 453R, 453G, and 453B each function as sub-pixels. The display device 400 shown in Figure 17A shows an example in which the sub-pixels 453R, 453B, and 453G are arranged in a stripe pattern. Note that the number of sub-pixels constituting one pixel 455 is not limited to three, but may be four or more. For example, there may be four sub-pixels that emit R, G, B, and white (W) light, respectively. Alternatively, there may be four sub-pixels that emit R, G, B, and yellow (Y) light, respectively.

[0214] In this specification, elements related to red light may be denoted with the identification code "R," elements related to green light with the identification code "G," and elements related to blue light with the identification code "B" to describe their respective aspects. Conversely, common aspects may be described by not assigning these identification codes. For example, when it is necessary to distinguish between multiple pixels 453, they may be indicated as pixel 453R, pixel 453G, or pixel 453B. Also, when it is not necessary to distinguish between pixels 453R, 453G, and 453B, they may simply be indicated as pixel 453.

[0215] Each pixel 453R, pixel 453G, and pixel 453B includes a display element and a circuit (pixel circuit) that controls the driving of the display element.

[0216] The connection portion 457 is provided on the outside of the display portion 452. The connection portion 457 can be provided along one or more sides of the display portion 452. There may be one or more connection portions 457. Figure 17A shows an example in which the connection portion 457 is provided so as to surround all four sides of the display portion. The connection portion 457 connects the common electrode of the display element to the wiring portion 458, and can supply potential to the common electrode.

[0217] Furthermore, a display device according to one aspect of the present invention may also function as a touch panel. For example, various detection elements (also called sensor elements) capable of detecting the proximity or contact of an object to be detected, such as a finger, can be applied to the display device.

[0218] Examples of sensor types include capacitive, resistive, surface acoustic wave, infrared, optical, and pressure-sensitive sensors.

[0219] Examples of capacitance methods include surface capacitance and projected capacitance. Examples of projected capacitance methods include self-capacitance and mutual capacitance. Mutual capacitance is preferred because it enables simultaneous multi-point detection.

[0220] Examples of touch panels include out-cell, on-cell, and in-cell types. An in-cell touch panel refers to a configuration in which electrodes constituting a sensing element are provided on one or both of the substrate supporting the display element (also called a display device) and the opposing substrate.

[0221] [Pixel Arrangement] Figures 17B to 17F are top views illustrating the pixel arrangement. In a display device according to one embodiment of the present invention, there are no particular limitations on the pixel arrangement, and various arrangements can be applied. Examples of pixel arrangements include stripe arrangement (see Figure 17B), S-stripe arrangement (see Figure 17C), delta arrangement (see Figure 17D), zigzag arrangement (see Figure 17E), and pentile arrangement (see Figure 17F). Other examples include mosaic arrangement, diamond arrangement, and Bayer arrangement.

[0222] Furthermore, in Figures 17B to 17F, the top surface shape of each sub-pixel (pixel 453R, pixel 453G, and pixel 453B) can be, for example, a triangle, a quadrilateral (including rectangles and squares), a pentagon, a polygon with rounded corners, an ellipse, or a circle. Here, the top surface shape of each sub-pixel corresponds to the top surface shape of the display area of ​​the display element that each sub-pixel possesses. The top surface shape and size of each sub-pixel can be determined independently. Note that the arrangement of pixels 453R, 453G, and 453B may be changed as appropriate. Also, the display element and the pixel circuit may be arranged in the same way or in different ways.

[0223] [Display Elements] Various elements can be used as display elements, for example, liquid crystal elements and light-emitting elements. In addition, display elements using shutter-type or optical interference-type MEMS (Micro Electro Mechanical Systems), or microcapsule-type, electrophoretic-type, electrowetting-type, or electronic powder fluid (registered trademark)-type methods can also be used. Furthermore, QLEDs using a light source and color conversion technology using quantum dot materials may also be used.

[0224] Examples of display devices using liquid crystal elements include transmissive liquid crystal display devices, reflective liquid crystal display devices, and semi-transmissive liquid crystal display devices.

[0225] Modes that can be used in display devices using liquid crystal elements include, for example, Vertical Alignment (VA) mode, FFS (Fringe Field Switching) mode, IPS (In-Plane-Switching) mode, TN (Twisted Nematic) mode, ASM (Axially Symmetric aligned Micro-cell) mode, OCB (Optically Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, and ECB (Electrically Examples of VA modes include Controlled Birefringence mode and guest host mode. Examples of VA modes include MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment) mode, and ASV (Advanced Super View) mode.

[0226] Examples of liquid crystal materials that can be used in liquid crystal elements include thermotropic liquid crystals, low molecular weight liquid crystals, polymer liquid crystals, polymer dispersed liquid crystals (PDLC), polymer network liquid crystals (PNLC), ferroelectric liquid crystals, and antiferroelectric liquid crystals. Depending on the conditions, these liquid crystal materials exhibit a cholesteric phase, smectic phase, cubic phase, chiral nematic phase, isotropic phase, or blue phase. Furthermore, either positive-type or negative-type liquid crystals may be used as the liquid crystal material.

[0227] Examples of light-emitting elements include self-emissive light-emitting elements such as LEDs, OLEDs, and semiconductor lasers.

[0228] Examples of light-emitting materials for light-emitting devices include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (such as quantum dot materials).

[0229] The light-emitting element can emit red, green, blue, cyan, magenta, yellow, or white. Furthermore, the color purity can be improved by adding a microcavity structure to the light-emitting element.

[0230] Of the pair of electrodes in a light-emitting element, one electrode functions as the anode (also called the positive electrode), and the other electrode functions as the cathode (also called the negative electrode).

[0231] <Example of Cross-Sectional Structure of a Display Device> Figure 18 is a cross-sectional view illustrating an example of the cross-sectional structure of a display device according to one embodiment of the present invention.

[0232] In the display device 490 shown in Figure 18, the configurations shown in regions 490a, 490b, and 490c can each be used in the display device 400. For example, the configuration shown in region 490a can be used in the region where the pixels 453 are provided. The configuration shown in region 490b can be used in the region where the circuit sections 454a and 454b are provided. The configuration shown in region 490c can be used in the region where the FPC 459 is provided.

[0233] Region 490a corresponds to the region where the pixel 161 shown in Embodiment 1 above is provided. In other words, region 490a corresponds to the region where the semiconductor device 100 and semiconductor device 100A shown in Embodiment 1 above are provided. That is, the transistors provided in region 490a correspond to the transistors (transistors M11 to M18, etc.) that the semiconductor device 100 and semiconductor device 100A shown in Embodiment 1 above are provided. Region 490b corresponds to the region where the gate driver unit 163 and source driver unit 164 shown in Embodiment 1 above are provided. That is, the transistors provided in region 490b correspond to the transistors that the gate driver unit 163 and source driver unit 164 shown in Embodiment 1 above are provided.

[0234] The display device 490 has a substrate 351 and a substrate 352. Furthermore, there is an adhesive layer 342 between substrates 351 and 352. Substrate 352 faces substrate 351 via the adhesive layer 342. Note that region 490c does not have substrate 352 or adhesive layer 342.

[0235] An insulating layer 382 is provided on the substrate 352 side of substrate 351. Transistors and light-emitting elements are provided on the insulating layer 382.

[0236] Here, as an example, a configuration is shown in which the transistor 200A shown in Embodiment 3 above is provided in each of regions 490a and 490b. Furthermore, a configuration is shown in which the transistor 200B shown in Embodiment 3 above is provided in region 490a. Also, a conductive layer 384 is provided in region 490c. The conductive layer 384 can be formed using the same process as the conductive layer 208 (conductive layer 208a and conductive layer 208b, etc.) in transistors 200A and 200B.

[0237] Furthermore, the transistors provided in regions 490a and 490b are not limited to structures like transistor 200A and transistor 200B. A single type of transistor structure may be provided, or two or more different types of transistor structures may be provided.

[0238] Although not shown in the figures, if the display device 490 has two or more transistors made of different materials in the semiconductor layer including the channel formation region, these transistors may be placed in different layers. In this case, some of the components of the transistors placed in the lower layer and some of the components of the transistors placed in the upper layer may be formed in the same process.

[0239] For example, if the display device 490 has an Si transistor and an OS transistor, the configuration can be such that the layer on which the OS transistor is provided is placed on top of the layer on which the Si transistor is provided. In this case, for example, a part of the components of the Si transistor provided in the lower layer and a part of the components of the OS transistor provided in the upper layer may be formed in the same process. For example, a conductive layer having regions that function as the source electrode and drain electrode of the Si transistor provided in the lower layer and a conductive layer having a region that functions as the back gate electrode of the OS transistor provided in the upper layer may be formed in the same process. For example, a conductive layer having a region that functions as the gate electrode of the Si transistor provided in the lower layer and a conductive layer having a region that functions as the back gate electrode of the OS transistor provided in the upper layer may be formed in the same process.

[0240] For example, in the region 490a shown in Figure 18, a configuration may be used in which a layer on which transistor 200B is provided is placed on top of a layer on which transistor 200A is provided. In this case, for example, the conductive layer 219 of transistor 200B may be provided on top of an insulating layer 209, or the conductive layer 219 of transistor 200B may be provided between an insulating layer 206 and an insulating layer 209 (for example, a configuration in which the conductive layer 219 of transistor 200B and the conductive layer 208 of transistor 200A are formed in the same process), or the conductive layer 219 of transistor 200B may be provided between an insulating layer 204 and an insulating layer 206 (for example, a configuration in which the conductive layer 219 of transistor 200B and the conductive layer 205 of transistor 200A are formed in the same process). In this case, for example, transistor 200A can be a Si transistor and transistor 200B can be an OS transistor.

[0241] An insulating layer 218 is provided so as to cover transistors 200A and 200B.

[0242] In region 490a, a pixel electrode 311 is provided on the insulating layer 218. The pixel electrode 311 is connected to the conductive layer 208b through openings provided in the insulating layer 218 and the insulating layer 209. In addition, an insulating layer 237 is provided on the insulating layer 218. The insulating layer 237 has a region that covers the end of the pixel electrode 311.

[0243] Furthermore, an EL layer 313 is provided so as to cover the insulating layer 237 and the pixel electrode 311. A common electrode 315 is provided so as to cover the EL layer 313. A protective layer 331 is provided so as to cover the common electrode 315.

[0244] The pixel electrode 311 and the common electrode 315 overlap via the EL layer 313, and the region where the pixel electrode 311 and the EL layer 313 are in contact with each other, and where the EL layer 313 and the common electrode 315 are in contact, functions as a light-emitting element 330. The pixel electrode 311 functions as one electrode (or first terminal) of the light-emitting element 330, and the common electrode 315 functions as the other electrode (or second terminal). The EL layer 313 has the function of emitting light with a luminescence intensity corresponding to the amount of current flowing between the pixel electrode 311 and the common electrode 315 via the EL layer 313.

[0245] The light-emitting element 330 corresponds to the light-emitting element LDs found in the semiconductor device 100 and semiconductor device 100A, etc., as shown in the above-described embodiment 1.

[0246] A light-shielding layer 317 is provided on the substrate 351 side of substrate 352.

[0247] In region 490a, the light-shielding layer 317 is provided with an opening that overlaps with the light-emitting element 330. Therefore, the light emitted by the light-emitting element 330 is emitted to the outside of the display device 490 through the opening in the light-shielding layer 317. In Figure 18, this is represented by a dashed arrow and the label "Light".

[0248] In region 490c, a conductive layer 386 is provided on a portion of the insulating layer 218. The conductive layer 386 has a region that is in contact with the conductive layer 384 through openings provided in the insulating layer 218 and the insulating layer 209.

[0249] The conductive layer 384 can be provided in the same layer as conductive layers 208a and 208b. Therefore, the conductive layer 384 can have the same material as conductive layers 208a and 208b, and can be formed in the same process. For example, conductive layers 208a, 208b, and 384 can be formed by processing the same conductive film. Also, the conductive layer 386 can be provided in the same layer as the pixel electrode 311. Therefore, the conductive layer 386 can have the same material as the pixel electrode 311, and can be formed in the same process. For example, the pixel electrode 311 and the conductive layer 386 can be formed by processing the same conductive film. In region 490c, the conductive layer 386 is exposed. This allows the conductive layer 386 and the FPC 459 to be connected via the connecting layer 388.

[0250] As the connecting layer 388, for example, an anisotropic conductive film (ACF) and an anisotropic conductive paste (ACP) can be used.

[0251] <Examples of light-emitting element configurations> In one aspect of the present invention, when a display device has a light-emitting element, various configurations of light-emitting elements can be used.

[0252] Figures 19A, 19B, 20A, and 20B are cross-sectional views illustrating various configurations of light-emitting elements.

[0253] [Configuration Example 1] The display device 490A shown in Figure 19A has light-emitting elements 330R, 330G, and 330B between substrate 351 and substrate 352. Light-emitting element 330R is a display element with a pixel that emits red light, light-emitting element 330G is a display element with a pixel that emits green light, and light-emitting element 330B is a display element with a pixel that emits blue light. When describing things common to light-emitting elements 330R, 330G, and 330B, they may simply be referred to as light-emitting element 330.

[0254] Note that in Figure 19A, some details of the configuration between the substrate 351 and the light-emitting element 330, and the configuration between the substrate 352 and the light-emitting element 330 are omitted. The display device 490A has, for example, transistors constituting a pixel circuit and an insulating layer 218 provided to cover the transistors between the substrate 351 and the light-emitting element 330.

[0255] The display device 490A employs an SBS (Side By Side) structure. The SBS structure allows for the optimization of materials and configurations for each light-emitting element, thus increasing the freedom of material and configuration selection and making it easier to improve luminescence intensity and reliability.

[0256] The display device 490A is a top-emission type. In the top-emission type, transistors and other components can be placed overlapping with the light-emitting region of the light-emitting element, which allows for a higher aperture ratio of pixels compared to the bottom-emission type.

[0257] A light-emitting element 330R, a light-emitting element 330G, and a light-emitting element 330B are provided on the insulating layer 218.

[0258] The light-emitting element 330R has a pixel electrode 311R on the insulating layer 218, an EL layer 313R on the pixel electrode 311R, and a common electrode 315 on the EL layer 313R. The light-emitting element 330R shown in Figure 19A emits red light. The EL layer 313R has a light-emitting layer that emits red light.

[0259] The light-emitting element 330G has a pixel electrode 311G on the insulating layer 218, an EL layer 313G on the pixel electrode 311G, and a common electrode 315 on the EL layer 313G. The light-emitting element 330G shown in Figure 19A emits green light. The EL layer 313G has a light-emitting layer that emits green light.

[0260] The light-emitting element 330B has a pixel electrode 311B on the insulating layer 218, an EL layer 313B on the pixel electrode 311B, and a common electrode 315 on the EL layer 313B. The light-emitting element 330B shown in Figure 19A emits blue light. The EL layer 313B has a light-emitting layer that emits blue light.

[0261] In Figure 19A, EL layers 313R, 313G, and 313B are all shown to be the same thickness, but this is not the only option. The thicknesses of EL layers 313R, 313G, and 313B may be different. For example, it is preferable to set the thickness of EL layers 313R, 313G, and 313B so that the optical path length is such that the light emitted by each is intensified. This makes it possible to realize a microcavity structure and improve the color purity of the light emitted from each light-emitting element.

[0262] The pixel electrode 311R is connected to a transistor (not shown) in the pixel circuit corresponding to the light-emitting element 330R via an opening provided in the insulating layer 218, etc. The pixel electrode 311G is connected to a transistor (not shown) in the pixel circuit corresponding to the light-emitting element 330G. The pixel electrode 311B is connected to a transistor (not shown) in the pixel circuit corresponding to the light-emitting element 330B.

[0263] The ends of the pixel electrodes 311R, 311G, and 311B are covered by an insulating layer 237. The insulating layer 237 functions as a partition. The insulating layer 237 can be provided in a single-layer or multi-layer structure using one or both of inorganic insulating materials and / or organic insulating materials. For example, the insulating layer 237 can be made of the same material used for the insulating layer 218. The insulating layer 237 can insulate the pixel electrodes from the common electrode. Furthermore, the insulating layer 237 can insulate adjacent light-emitting elements from each other.

[0264] The common electrode 315 is a continuous film provided in common to the light-emitting element 330R, light-emitting element 330G, and light-emitting element 330B. The common electrode 315, which is shared by multiple light-emitting elements, is connected to a conductive layer formed from the same material and using the same process as the pixel electrode 311R, pixel electrode 311G, and pixel electrode 311B in areas where no light-emitting elements are provided.

[0265] In a display device according to one aspect of the present invention, it is preferable to use a conductive film that transmits visible light for the electrode that extracts light, among the pixel electrode and the common electrode. It is also preferable to use a conductive film that reflects visible light for the electrode that does not extract light.

[0266] A conductive film that transmits visible light may also be used on the electrode that does not extract light. In this case, it is preferable to place the electrode between the reflective layer and the EL layer. In other words, the light emitted from the EL layer may be reflected by the reflective layer and extracted from the display device.

[0267] As the material for forming the pair of electrodes of the light-emitting element, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, such materials include metals such as aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, as well as alloys containing these in appropriate combinations. Other examples of such materials include indium tin oxide (also called In-Sn oxide or ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), and In-W-Zn oxide. Furthermore, other examples of such materials include aluminum-containing alloys such as aluminum-nickel-lanthanum alloy (Al-Ni-La), silver-magnesium alloys, and silver-containing alloys such as silver-palladium-copper alloy (Ag-Pd-Cu or APC). Other materials include elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (for example, lithium, cesium, calcium, and strontium), rare earth metals such as europium and ytterbium, alloys containing these in appropriate combinations, and graphene.

[0268] It is preferable that the light-emitting element has a microcavity structure. Therefore, it is preferable that one electrode of the light-emitting element is a semitransmitting / semi-reflective electrode that is both transparent and reflective to visible light, and the other electrode is a reflective electrode that is reflective to visible light. By having a microcavity structure in the light-emitting element, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting element.

[0269] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode with a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm) for the transparent electrode of the light-emitting element. The visible light reflectance of the semi-transparent and semi-reflective electrodes shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and less than 100%, preferably 70% or more and less than 100%. The resistivity of these electrodes shall be 1 × 10⁻⁶ −２ A value of Ωcm or less is preferable.

[0270] The EL layers 313R, 313G, and 313B are each provided in an island-like manner. In Figure 19A, the edges of adjacent EL layers 313R and 313G overlap, and the edges of adjacent EL layers 313G and 313B overlap. Although not shown, the edges of adjacent EL layers 313R and 313B also overlap. When forming island-like EL layers using a metal mask (or fine metal mask), the edges of adjacent EL layers may overlap as shown in Figure 19A, but this is not limited to this. In other words, adjacent EL layers may not overlap and may be separated from each other. Furthermore, in a display device, there may be both areas where adjacent EL layers overlap and areas where adjacent EL layers do not overlap and are separated.

[0271] Each of the EL layers 313R, 313G, and 313B has at least one light-emitting layer. The light-emitting layer has one or more types of light-emitting materials. As the light-emitting material, materials that exhibit light-emitting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red can be used as appropriate. In addition, materials that emit near-infrared light can also be used as the light-emitting material.

[0272] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0273] The light-emitting layer may contain one or more types of organic compounds (such as a host material and an assist material) in addition to the light-emitting substance (guest material). One or more of the organic compounds may be substances with high hole transport properties (hole transport materials) and / or substances with high electron transport properties (electron transport materials). Alternatively, one or more of the organic compounds may be bipolar substances (substances with high electron and hole transport properties) or TADF materials.

[0274] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting element.

[0275] The EL layer may have, in addition to the light-emitting layer, one or more of the following: a layer containing a material with high hole injection properties (hole injection layer), a layer containing a hole transport material (hole transport layer), a layer containing a material with high electron blocking properties (electron blocking layer), a layer containing a material with high electron injection properties (electron injection layer), a layer containing an electron transport material (electron transport layer), and a layer containing a material with high hole blocking properties (hole blocking layer). Furthermore, the EL layer may contain either or both a bipolar material and a TADF material.

[0276] The light-emitting element may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting element can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, or coating.

[0277] The light-emitting element may be a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having multiple light-emitting units). Each light-emitting unit has at least one light-emitting layer. The tandem structure is a configuration in which multiple light-emitting units are connected in series via a charge generation layer. The charge generation layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between a pair of electrodes. By using a tandem structure, it is possible to create a light-emitting element that can emit light with high light intensity. In addition, compared to a single structure, the tandem structure can reduce the current required to obtain the same light intensity, thus improving reliability. The tandem structure can also be called a stack structure.

[0278] In Figure 19A, when a tandem light-emitting element is used, it is preferable that the EL layer 313R has a structure having multiple light-emitting units that emit red light, the EL layer 313G has a structure having multiple light-emitting units that emit green light, and the EL layer 313B has a structure having multiple light-emitting units that emit blue light.

[0279] A protective layer 331 is provided on the light-emitting elements 330R, 330G, and 330B. The protective layer 331 and the substrate 352 are bonded together via an adhesive layer 362. A light-shielding layer 317 is provided on the substrate 352. For sealing the light-emitting elements, for example, a solid sealing structure or a hollow sealing structure can be applied. In Figure 19A, the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 362, indicating that a solid sealing structure is applied. Alternatively, a hollow sealing structure may be applied, in which the space is filled with an inert gas (such as nitrogen or argon). In this case, the adhesive layer 362 may be provided in a frame shape so as not to overlap with the light-emitting elements. Furthermore, the space may be filled with a resin different from the adhesive layer 362 provided in a frame shape.

[0280] By providing a protective layer 331 on the light-emitting element 330R, light-emitting element 330G, and light-emitting element 330B, the reliability of the light-emitting elements can be improved.

[0281] The protective layer 331 may be a single layer or a laminated structure of two or more layers. Furthermore, the conductivity of the protective layer 331 is not required. At least one of an insulating film, a semiconductor film, and a conductive film can be used as the protective layer 331.

[0282] The presence of an inorganic film in the protective layer 331 prevents oxidation of the common electrode 315 and suppresses the intrusion of impurities (such as moisture and oxygen) into the light-emitting element, thereby suppressing degradation of the light-emitting element and improving the reliability of the display device.

[0283] An inorganic insulating film can be used for the protective layer 331. Examples of materials that can be used for the inorganic insulating film include oxides, nitrides, oxidized nitrides, and nitride oxides. Specific examples of these inorganic insulating films are as described above. In particular, the protective layer 331 preferably has a nitride or nitride oxide, and more preferably has a nitride.

[0284] The protective layer 331 may also be an inorganic film containing ITO, In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or IGZO. The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the common electrode 315. The inorganic film may further contain nitrogen.

[0285] When the light emitted from a light-emitting element is extracted via a protective layer 331, it is preferable that the protective layer 331 has high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0286] As the protective layer 331, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used. By using this laminated structure, it is possible to suppress the penetration of impurities (such as water and oxygen) into the EL layer.

[0287] Furthermore, the protective layer 331 may have an organic film. For example, the protective layer 331 may have both an organic film and an inorganic film. Examples of organic films that can be used for the protective layer 331 include organic insulating films that can be used for the insulating layer 218.

[0288] The display device 490A is of the top-emission type. The light emitted by the light-emitting element is emitted towards the substrate 352. It is preferable to use a material with high transmittance to visible light for the substrate 352. The pixel electrodes 311R, 311G, and 311B contain a material that reflects visible light, and the counter electrode (common electrode 315) contains a material that transmits visible light.

[0289] It is preferable to provide a light-shielding layer 317 on the surface of the substrate 352 that faces the substrate 351. The light-shielding layer 317 can be provided between adjacent light-emitting elements, for example.

[0290] Various optical components can be placed on the outside of the substrate 352 (the side opposite to the substrate 351). Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-gathering films. In addition, surface protection layers such as an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may be placed on the outside of the substrate 352. For example, a glass layer or a silica layer (SiO ｘ By providing a protective layer, surface contamination and scratching can be suppressed, which is preferable. Furthermore, DLC (diamond-like carbon), aluminum oxide (AlO2) can be used as the surface protective layer. ｘ ), polyester-based materials, or polycarbonate-based materials may be used. It is preferable to use a material with high transmittance to visible light for the surface protective layer. Furthermore, it is preferable to use a material with high hardness for the surface protective layer.

[0291] The substrates 351 and 352 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, and semiconductor, respectively. The substrate on the side that extracts light from the light-emitting element is made of a material that transmits the light. Using flexible materials for substrates 351 and 352 increases the flexibility of the display device, enabling the realization of a flexible display (e.g., a bendable display, foldable display, rollable display, slidable display, and stretchable display). A polarizing plate may also be used as at least one of substrates 351 and 352.

[0292] As substrates 351 and 352, the following can be used, respectively: polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, and cellulose nanofiber. At least one of substrates 351 and 352 may be made of glass of a thickness sufficient to provide flexibility.

[0293] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence). Examples of films with high optical isotropy include triacetylcellulose (TAC, also called cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0294] Various types of curing adhesives can be used as the adhesive layer 362, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0295] In one aspect of the present invention, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate the light-emitting element. Examples of vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers included in the EL layer (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, charge generation layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing methods (inkjet, screen printing, offset printing, flexographic printing, gravure, or microcontact).

[0296] [Configuration Example 2] The display device 490B shown in Figure 19B includes a light-emitting element 330R, a light-emitting element 330G, a light-emitting element 330B, a colored layer 332R that transmits red light, a colored layer 332G that transmits green light, and a colored layer 332B that transmits blue light. The display device 490B mainly differs from the display device 490A in that each sub-pixel of each color uses a light-emitting element having a common EL layer 313 and a colored layer (color filter, etc.). Note that explanations of parts that are the same as those of the above-mentioned display device may be omitted.

[0297] A colored layer is a colored layer that selectively transmits light in a specific wavelength range and absorbs light in other wavelength ranges. For example, a red color filter that transmits light in the red wavelength range, a green color filter that transmits light in the green wavelength range, and a blue color filter that transmits light in the blue wavelength range can be used. One or more of the following can be used for each colored layer: metal materials, resin materials, pigments, and dyes. The colored layers are formed at the desired positions by methods such as printing, inkjet printing, or etching using photolithography.

[0298] The light-emitting element 330R includes a pixel electrode 311R, an EL layer 313 on the pixel electrode 311R, and a common electrode 315 on the EL layer 313. The light emitted from the light-emitting element 330R is extracted as red light to the outside of the display device 490B via the colored layer 332R.

[0299] The light-emitting element 330G includes a pixel electrode 311G, an EL layer 313 on the pixel electrode 311G, and a common electrode 315 on the EL layer 313. The light emitted from the light-emitting element 330G is extracted as green light to the outside of the display device 490B via the colored layer 332G.

[0300] The light-emitting element 330B includes a pixel electrode 311B, an EL layer 313 on the pixel electrode 311B, and a common electrode 315 on the EL layer 313. The light emitted from the light-emitting element 330B is extracted as blue light to the outside of the display device 490B via the colored layer 332B.

[0301] The light-emitting elements 330R, 330G, and 330B each share an EL layer 313 and a common electrode 315. Providing a common EL layer 313 for each sub-pixel of each color reduces the number of manufacturing steps compared to providing a different EL layer for each sub-pixel of each color.

[0302] For example, the light-emitting elements 330R, 330G, and 330B shown in Figure 19B emit white light. The white light emitted by the light-emitting elements 330R, 330G, and 330B passes through the colored layers 332R, 332G, and 332B, thereby obtaining light of a desired color.

[0303] A light-emitting element that emits white light preferably includes two or more light-emitting layers. When obtaining white light using two light-emitting layers, the light-emitting layers may be selected such that their emission colors are complementary. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary, a configuration can be obtained in which the entire light-emitting element emits white light. Alternatively, when obtaining white light emission using three or more light-emitting layers, the emission colors of the three or more light-emitting layers combine to produce a configuration in which the entire light-emitting element emits white light.

[0304] The EL layer 313 preferably has, for example, an emissive layer having a light-emitting material that emits blue light, and an emissive layer having a light-emitting material that emits visible light with a longer wavelength than blue. The EL layer 313 preferably has, for example, an emissive layer that emits yellow light and an emissive layer that emits blue light. Alternatively, the EL layer 313 preferably has, for example, an emissive layer that emits red light, an emissive layer that emits green light, and an emissive layer that emits blue light.

[0305] For light-emitting elements that emit white light, a tandem structure is preferable. Specifically, a two-stage tandem structure having a light-emitting unit that emits yellow light and a light-emitting unit that emits blue light; a two-stage tandem structure having a light-emitting unit that emits red light and green light and a light-emitting unit that emits blue light; a three-stage tandem structure having a light-emitting unit that emits blue light, a light-emitting unit that emits yellow, yellow-green, or green light and a light-emitting unit that emits blue light in this order; or a three-stage tandem structure having a light-emitting unit that emits blue light, a light-emitting unit that emits yellow, yellow-green, or green light and red light and a light-emitting unit that emits blue light in this order. For example, possible arrangements for the number of layers and color order of the light-emitting unit include, from the anode side, a two-layer structure of B, Y; a two-layer structure of B, X (light-emitting unit X); a three-layer structure of B, Y, B; and a three-layer structure of B, X, B. Furthermore, possible arrangements for the number of layers and color order of the light-emitting layers in light-emitting unit X include, from the anode side, a two-layer structure of R, Y; a two-layer structure of R, G; a two-layer structure of G, R; a three-layer structure of G, R, G; and a three-layer structure of R, G, R. Additionally, other layers may be provided between the two light-emitting layers.

[0306] Furthermore, by applying a microcavity structure, a light-emitting element that normally emits white light may also emit light of specific wavelengths, such as red, green, or blue, with increased intensity.

[0307] Alternatively, for example, the light-emitting elements 330R, 330G, and 330B shown in Figure 19B emit blue light. In this case, the EL layer 313 has one or more light-emitting layers that emit blue light. In pixels that emit blue light, the blue light emitted by the light-emitting element 330B can be extracted. In pixels that emit red light and pixels that emit green light, by providing a color conversion layer between the light-emitting element 330R or 330G and the substrate 352, the blue light emitted by the light-emitting element 330R or 330G can be converted into longer wavelength light, and red or green light can be extracted. Furthermore, it is preferable to provide a coloring layer 332R between the color conversion layer and the substrate 352 on the light-emitting element 330R, and a coloring layer 332G between the color conversion layer and the substrate 352 on the light-emitting element 330G. Some of the light emitted by the light-emitting elements may be transmitted directly without being converted by the color conversion layer. By extracting the light that has passed through the color conversion layer via the colored layer, the colored layer absorbs light of colors other than the desired color, thereby increasing the color purity of the light exhibited by the subpixel.

[0308] [Configuration Example 3] The display device 490C shown in Figure 20A is an example of a display device to which an MML (metal maskless) structure is applied. In other words, the display device 490C has a light-emitting element manufactured without using a metal mask. Note that the configuration between the substrate 351 and the insulating layer 218, and the configuration between the protective layer 331 and the substrate 352 are the same as those of the display device 490A, so their explanation is omitted.

[0309] Furthermore, MML-structured light-emitting elements can be manufactured without using a metal mask. Therefore, it is possible to realize display devices that exceed the resolution limits imposed by the alignment accuracy of metal masks. Additionally, the equipment required for manufacturing metal masks and the metal mask cleaning process can be eliminated. Moreover, mass production of display devices can be achieved.

[0310] Furthermore, by adopting an MML structure, it is possible to realize a display device that integrates fine light-emitting elements. For example, without artificially increasing the resolution by applying a special pixel arrangement such as a pentile arrangement, it is possible to apply a so-called stripe arrangement in which R, G, and B are each arranged in one direction, and realize a display device with a resolution of 500 ppi or more, 1000 ppi or more, 2000 ppi or more, 3000 ppi or more, or 5000 ppi or more.

[0311] In this MML-structured light-emitting element, the layer containing the light-emitting layer is not formed using a fine metal mask, but rather by depositing the layer containing the light-emitting layer onto one surface and then processing it using photolithography. Therefore, it is possible to realize high-definition display devices or display devices with high aperture ratios, which have been difficult to achieve until now. Furthermore, since the light-emitting layer can be made separately for each color, it is possible to realize a display device that is extremely vivid, has high contrast, and displays high quality. In addition, by providing a sacrificial layer on the light-emitting layer, the damage the light-emitting layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting element can be improved.

[0312] For example, if a display device is composed of three types of light-emitting elements—one that emits blue light, one that emits green light, and one that emits red light—three types of island-shaped light-emitting layers can be formed by repeating the process of depositing the light-emitting layer and processing it using photolithography three times.

[0313] In Figure 20A, light-emitting elements 330R, 330G, and 330B are provided on the insulating layer 218.

[0314] The light-emitting element 330R includes a conductive layer 324R on an insulating layer 218, a conductive layer 326R on the conductive layer 324R, a layer 333R on the conductive layer 326R, a common layer 314 on the layer 333R, and a common electrode 315 on the common layer 314. The light-emitting element 330R shown in Figure 20A emits red light. Layer 333R has a light-emitting layer that emits red light. In the light-emitting element 330R, layer 333R and the common layer 314 can be collectively called the EL layer. In addition, one or both of the conductive layer 324R and the conductive layer 326R can be called the pixel electrode.

[0315] The light-emitting element 330G includes a conductive layer 324G on an insulating layer 218, a conductive layer 326G on the conductive layer 324G, a layer 333G on the conductive layer 326G, a common layer 314 on the layer 333G, and a common electrode 315 on the common layer 314. The light-emitting element 330G shown in Figure 20A emits green light. Layer 333G has a light-emitting layer that emits green light. In the light-emitting element 330G, layer 333G and the common layer 314 can be collectively called the EL layer. In addition, one or both of the conductive layers 324G and 326G can be called the pixel electrode.

[0316] The light-emitting element 330B includes a conductive layer 324B on an insulating layer 218, a conductive layer 326B on the conductive layer 324B, a layer 333B on the conductive layer 326B, a common layer 314 on the layer 333B, and a common electrode 315 on the common layer 314. The light-emitting element 330B shown in Figure 20A emits blue light. Layer 333B has a light-emitting layer that emits blue light. In the light-emitting element 330B, layer 333B and the common layer 314 can be collectively called the EL layer. In addition, one or both of the conductive layers 324B and 326B can be called the pixel electrode.

[0317] In this specification, among the EL layers of a light-emitting element, layers provided in an island-like manner for each light-emitting element are referred to as layer 333B, layer 333G, or layer 333R, and a layer shared by multiple light-emitting elements is referred to as the common layer 314. In this specification, the common layer 314 may be omitted, and layers 333R, 333G, and 333B may be referred to as island-like EL layers or island-shaped EL layers.

[0318] Layers 333R, 333G, and 333B are separated from each other. By providing the EL layer in an island-like configuration for each light-emitting element, leakage current between adjacent light-emitting elements can be suppressed. This prevents unintended light emission caused by crosstalk, enabling the realization of a display device with extremely high contrast.

[0319] Note that in Figure 20A, layers 333R, 333G, and 333B are all shown to be of the same thickness, but this is not limited to this. The thicknesses of layers 333R, 333G, and 333B may be different.

[0320] The conductive layer 324R is connected to a transistor (not shown) in the pixel circuit corresponding to the light-emitting element 330R via an opening provided in the insulating layer 218, etc. The conductive layer 324G is connected to a transistor (not shown) in the pixel circuit corresponding to the light-emitting element 330G. The conductive layer 324B is connected to a transistor (not shown) in the pixel circuit corresponding to the light-emitting element 330B.

[0321] The conductive layers 324R, 324G, and 324B are formed to cover the openings provided in the insulating layer 218. Layer 328 is embedded in the recesses of the conductive layers 324R, 324G, and 324B, respectively.

[0322] Layer 328 has the function of flattening the recesses of conductive layers 324R, 324G, and 324B. Conductive layers 326R, 326G, and 326B are provided on top of conductive layers 324R, 324G, and 324B, and are connected to conductive layers 324R, 324G, and 324B. Therefore, regions overlapping with the recesses of conductive layers 324R, 324G, and 324B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixels. It is preferable to use conductive layers that function as reflective electrodes for conductive layers 324R and 326R.

[0323] Layer 328 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for layer 328 as appropriate. In particular, it is preferable that layer 328 be formed using an insulating material, and it is especially preferable that it be formed using an organic insulating material. For example, an organic insulating material that can be used for the insulating layer 237 described above can be applied to layer 328.

[0324] Figure 20A shows an example in which the upper surface of layer 328 has a flat portion, but the shape of layer 328 is not particularly limited. The upper surface of layer 328 can have at least one of a convex curved surface, a concave curved surface, and a flat surface.

[0325] The height of the top surface of layer 328 and the height of the top surface of conductive layer 324R may be the same or they may be different. For example, the height of the top surface of layer 328 may be lower or higher than the height of the top surface of conductive layer 324R.

[0326] The end of the conductive layer 326R may be aligned with the end of the conductive layer 324R, or it may cover the side surface of the end of the conductive layer 324R. Preferably, the ends of the conductive layer 324R and the conductive layer 326R have a tapered shape. Specifically, it is preferable that the ends of the conductive layer 324R and the conductive layer 326R have a tapered shape with a taper angle greater than 0 degrees and less than 90 degrees. When the end of the pixel electrode has a tapered shape, the layer 333R provided along the side surface of the pixel electrode has an inclined portion. By making the side surface of the pixel electrode tapered, the coverage of the EL layer provided along the side surface of the pixel electrode can be improved.

[0327] Since conductive layers 324G and 326G, and conductive layers 324B and 326B are the same as conductive layers 324R and 326R, a detailed explanation is omitted.

[0328] The top and sides of the conductive layer 326R are covered by layer 333R. Similarly, the top and sides of the conductive layer 326G are covered by layer 333G, and the top and sides of the conductive layer 326B are covered by layer 333B. Therefore, the entire region where the conductive layers 326R, 326G, and 326B are provided can be used as the light-emitting region of the light-emitting elements 330R, 330G, and 330B, thereby increasing the aperture ratio of the pixels.

[0329] The upper surface and sides of each of layers 333R, 333G, and 333B are covered by insulating layers 325 and 327. A common layer 314 is provided on layers 333R, 333G, and 333B, as well as insulating layers 325 and 327, and a common electrode 315 is provided on the common layer 314. The common layer 314 and the common electrode 315 are each a continuous film provided in common to multiple light-emitting elements.

[0330] In Figure 20A, the insulating layer 237 shown in Figure 19A, etc., is not provided between the conductive layer 326R and layer 333R. In other words, the display device 490C does not have an insulating layer (also called a partition, bank, or spacer, etc.) that is in contact with the pixel electrodes and covers the upper edges of the pixel electrodes. Therefore, the spacing between adjacent light-emitting elements can be made extremely narrow. Consequently, a high-definition and high-resolution display device can be made. In addition, a mask (e.g., a photomask) for forming the insulating layer is not required, and the manufacturing cost of the display device can be reduced.

[0331] As described above, layers 333R, 333G, and 333B each have an emissive layer. Preferably, layers 333R, 333G, and 333B each have an emissive layer and a carrier transport layer (electron transport layer or hole transport layer) on the emissive layer. Alternatively, preferably layers 333R, 333G, and 333B each have an emissive layer and a carrier block layer (hole block layer or electron block layer) on the emissive layer. Alternatively, preferably layers 333R, 333G, and 333B each have an emissive layer, a carrier block layer on the emissive layer, and a carrier transport layer on the carrier block layer. Since the surfaces of layers 333R, 333G, and 333B are exposed during the manufacturing process of the display device, providing one or both of the carrier transport layer and the carrier block layer on the emissive layer suppresses the exposure of the emissive layer to the outermost surface and reduces damage to the emissive layer. This can improve the reliability of the light-emitting element.

[0332] The common layer 314 may have, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 314 may have an electron transport layer and an electron injection layer stacked together, or a hole transport layer and a hole injection layer stacked together. The common layer 314 is shared by the light-emitting element 330R, the light-emitting element 330G, and the light-emitting element 330B.

[0333] Each side of layer 333R, layer 333G, and layer 333B is covered by the insulating layer 325. The insulating layer 327 covers each side of layer 333R, layer 333G, and layer 333B via the insulating layer 325.

[0334] By covering the sides (and even a portion of the top surface) of layers 333R, 333G, and 333B with at least one of insulating layers 325 and 327, the common layer 314 (or common electrode 315) is prevented from coming into contact with the pixel electrode and the sides of layers 333R, 333G, and 333B, thereby suppressing short circuits of the light-emitting element. This improves the reliability of the light-emitting element.

[0335] It is preferable that the insulating layer 325 is in contact with the respective sides of layers 333R, 333G, and 333B. By configuring the insulating layer 325 to be in contact with layers 333R, 333G, and 333B, peeling of the layers 333R, 333G, and 333B can be prevented, thereby improving the reliability of the light-emitting element.

[0336] The insulating layer 327 is provided on the insulating layer 325 so as to fill the recesses of the insulating layer 325. Preferably, the insulating layer 327 covers at least a portion of the side surface of the insulating layer 325.

[0337] By providing insulating layers 325 and 327, the gaps between adjacent island-shaped layers can be filled, thereby reducing the large height differences and irregularities on the formed surface of layers (e.g., carrier injection layers and common electrodes) on the island-shaped layers, making them flatter. Consequently, the coverage of the carrier injection layers and common electrodes can be improved.

[0338] The common layer 314 and the common electrode 315 are provided on layers 333R, 333G, 333B, insulating layer 325, and insulating layer 327. Before the insulating layers 325 and 327 are provided, a step difference exists due to the region where the pixel electrode and island-shaped EL layer are provided and the region where the pixel electrode and island-shaped EL layer are not provided (the region between light-emitting elements). In one embodiment of the present invention, the presence of insulating layers 325 and 327 can flatten this step difference and improve the coverage of the common layer 314 and the common electrode 315. Therefore, connection failures due to step breaks can be suppressed. In addition, it is possible to suppress the local thinning of the common electrode 315 due to the step difference, which would increase its electrical resistance.

[0339] The upper surface of the insulating layer 327 preferably has a shape that is more flat. The upper surface of the insulating layer 327 may have at least one of a flat surface, a convex curved surface, and a concave curved surface. For example, the upper surface of the insulating layer 327 preferably has a convex curved shape with a large radius of curvature.

[0340] An inorganic insulating film can be used for the insulating layer 325. Examples of materials that can be used for the inorganic insulating film include oxides, nitrides, oxidized nitrides, and nitride oxides. Specific examples of these inorganic insulating films are as described above. The insulating layer 325 may be a single-layer structure or a laminated structure. In particular, aluminum oxide is preferred because it has a high selectivity ratio with the EL layer during etching and has the function of protecting the EL layer in the formation of the insulating layer 327, which will be described later. In particular, by applying an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by the ALD method to the insulating layer 325, an insulating layer 325 with few pinholes and excellent function in protecting the EL layer can be formed. Alternatively, the insulating layer 325 may be a laminated structure of a film formed by the ALD method and a film formed by the sputtering method. For example, the insulating layer 325 may be a laminated structure of an aluminum oxide film formed by the ALD method and a silicon nitride film formed by the sputtering method.

[0341] Preferably, the insulating layer 325 functions as a barrier insulating layer against at least one of water and oxygen. Preferably, the insulating layer 325 has the function of suppressing the diffusion of at least one of water and oxygen. Furthermore, preferably, the insulating layer 325 has the function of capturing or fixing (also called gettering) at least one of water and oxygen.

[0342] The insulating layer 325 functions as a barrier insulating layer, thereby suppressing the intrusion of impurities (typically at least one of water and oxygen) that could diffuse from the outside into each light-emitting element. This configuration makes it possible to provide a highly reliable light-emitting element and, furthermore, a highly reliable display device.

[0343] The insulating layer 325 preferably has a low impurity concentration. This prevents impurities from mixing from the insulating layer 325 into the EL layer and degrading the EL layer. Furthermore, by lowering the impurity concentration in the insulating layer 325, the barrier properties against at least one of water and oxygen can be improved. For example, it is desirable that the insulating layer 325 has a sufficiently low hydrogen concentration and a sufficiently low carbon concentration, preferably both.

[0344] The insulating layer 327, provided on the insulating layer 325, has the function of flattening the large height differences and irregularities in the insulating layer 325 formed between adjacent light-emitting elements. In other words, the presence of the insulating layer 327 improves the flatness of the surface forming the common electrode 315.

[0345] An insulating layer having an organic material can be used as the insulating layer 327. Preferably, a photosensitive organic resin is used as the organic material; for example, a photosensitive resin composition containing an acrylic resin is preferred. In this specification, the term "acrylic resin" does not refer only to polymethacrylate esters or methacrylic resins, but may refer to acrylic polymers in a broad sense.

[0346] As the insulating layer 327, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins may be used. Alternatively, as the insulating layer 327, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, and alcohol-soluble polyamide resin may be used. Photoresist may also be used as the photosensitive resin. Either a positive-type or negative-type material may be used as the photosensitive organic resin.

[0347] The insulating layer 327 may be made of a material that absorbs visible light. By absorbing the light emitted from the light-emitting element, the insulating layer 327 can suppress light leakage (stray light) from one light-emitting element to an adjacent light-emitting element via the insulating layer 327. This improves the display quality of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, the display device can be made lighter and thinner.

[0348] Examples of materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used in color filters (color filter materials). In particular, it is preferable to use a resin material obtained by laminating or mixing two or more color filter materials, as this can enhance the visible light shielding effect. In particular, by mixing three or more color filter materials, it is possible to create a black or near-black resin layer.

[0349] [Configuration Example 4] The display device 490D shown in Figure 20B includes a light-emitting element 330R, a light-emitting element 330G, a light-emitting element 330B, a colored layer 332R that transmits red light, a colored layer 332G that transmits green light, and a colored layer 332B that transmits blue light, etc. The display device 490D mainly differs from the display device 490C in that each sub-pixel of each color uses a light-emitting element having layers 333R, 333G, and 333B respectively, and a colored layer (color filter, etc.). Note that explanations of parts that are the same as those of the above-mentioned display device may be omitted.

[0350] The light emitted from the light-emitting element 330R is extracted as red light to the outside of the display device 490D via the colored layer 332R. Similarly, the light emitted from the light-emitting element 330G is extracted as green light to the outside of the display device 490D via the colored layer 332G. The light emitted from the light-emitting element 330B is extracted as blue light to the outside of the display device 490D via the colored layer 332B.

[0351] Each light-emitting element 330R, 330G, and 330B has layers 333R, 333G, and 333B, respectively. Layers 333R, 333G, and 333B are formed using the same material and the same process. Furthermore, layers 333R, 333G, and 333B are spaced apart from each other. By providing the EL layer in an island-like configuration for each light-emitting element, leakage current between adjacent light-emitting elements can be suppressed. This prevents unintended light emission caused by crosstalk, enabling the realization of a display device with extremely high contrast.

[0352] For example, the light-emitting elements 330R, 330G, and 330B shown in Figure 20B emit white light. The white light emitted by the light-emitting elements 330R, 330G, and 330B passes through the colored layers 332R, 332G, and 332B, thereby obtaining light of a desired color.

[0353] Alternatively, for example, the light-emitting elements 330R, 330G, and 330B shown in Figure 20B emit blue light. In this case, layers 333R, 333G, and 333B each have one or more light-emitting layers that emit blue light. In pixels that emit blue light, the blue light emitted by the light-emitting element 330B can be extracted. Furthermore, in pixels that emit red light and pixels that emit green light, a color conversion layer can be provided between the light-emitting element 330R or 330G and the substrate 352 to convert the blue light emitted by the light-emitting element 330R or 330G into longer wavelength light, thereby extracting red or green light. Moreover, it is preferable to provide a coloring layer 332R between the color conversion layer and the substrate 352 on the light-emitting element 330R, and a coloring layer 332G between the color conversion layer and the substrate 352 on the light-emitting element 330G. By extracting the light that has passed through the color conversion layer via the colored layer, the colored layer absorbs light of colors other than the desired color, thereby increasing the color purity of the light exhibited by the subpixel.

[0354] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0355] (Embodiment 5) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 21 to 23.

[0356] The electronic device of this embodiment has a display unit that uses a display device according to one aspect of the present invention, or a semiconductor device according to one aspect of the present invention. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display unit of various electronic devices.

[0357] Furthermore, a semiconductor device according to one aspect of the present invention can be applied to devices other than the display unit of an electronic device. For example, using a semiconductor device according to one aspect of the present invention in the control unit of an electronic device is preferable because it enables lower power consumption.

[0358] Examples of electronic devices include, for example, television sets, desktop or notebook computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0359] In particular, a display device according to one aspect of the present invention can be used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wearable devices that can be worn on the wrist, such as wristwatch-type information terminals and bracelet-type information terminals, as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, SR (Substitutional Reality) devices, MR (Mixed Reality) devices, and devices that implement spatial computing, such as spatial computers.

[0360] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, more preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device having high resolution and / or high detail, it becomes possible to further enhance the sense of presence and depth. Furthermore, there are no particular limitations on the aspect ratio of the display device according to one embodiment of the present invention. For example, the display device can support various aspect ratios such as 1:1 (square), 4:3, 16:9, or 16:10.

[0361] The electronic device of this embodiment may have sensors (including functions for detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0362] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, and text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date, or time, a function to execute various software (programs), a wireless communication function, and a function to read programs or data recorded on a recording medium.

[0363] Figures 21A to 21D illustrate an example of a wearable device that can be worn on the head. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device that has the function to display at least one of the following content types, such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.

[0364] The electronic device 700A shown in Figure 21A and the electronic device 700B shown in Figure 21B each include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0365] A display device according to one embodiment of the present invention can be applied to the display panel 751. Therefore, an electronic device capable of displaying extremely high resolution can be created.

[0366] Electronic devices 700A and 700B can project an image displayed on the display panel 751 onto the display area 756 of the optical element 753. Because the optical element 753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 753. Therefore, electronic devices 700A and 700B are electronic devices capable of AR display.

[0367] Electronic devices 700A and 700B may be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 700A and 700B may each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 756.

[0368] The communications unit has a wireless communication device, which can supply video signals and other signals. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, it may be equipped with a connector to which a cable supplying video signals and power potential can be connected.

[0369] Electronic devices 700A and 700B are equipped with batteries that can be charged wirelessly, wired, or both.

[0370] The housing 721 may be equipped with a touch sensor module. The touch sensor module has the function of detecting when the outer surface of the housing 721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by providing a touch sensor module in each of the two housings 721, the range of operations can be expanded.

[0371] Various types of touch sensors can be applied to the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, or optical sensors can be employed. In particular, it is preferable to apply capacitive or optical sensors to the touch sensor module.

[0372] When using an optical touch sensor, a photoelectric conversion element can be used as the light-receiving element. The active layer of the photoelectric conversion element can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0373] The electronic device 800A shown in Figure 21C and the electronic device 800B shown in Figure 21D each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0374] A display device according to one embodiment of the present invention can be applied to the display unit 820. Therefore, an electronic device capable of displaying extremely high resolution can be created. This allows the user to experience a high level of immersion.

[0375] The display unit 820 is located inside the housing 821 in a position visible through the lens 832. Furthermore, by displaying different images on a pair of display units 820, a three-dimensional display using parallax can be achieved.

[0376] Electronic devices 800A and 800B can each be described as electronic devices for VR. A user wearing electronic device 800A or electronic device 800B can view the image displayed on the display unit 820 through the lens 832.

[0377] It is preferable that electronic devices 800A and 800B each have a mechanism that allows adjustment of the left and right positions of the lens 832 and the display unit 820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 832 and the display unit 820.

[0378] The mounting portion 823 allows the user to attach the electronic device 800A or 800B to their head. In Figure 21C, etc., it is illustrated as having a shape similar to the temples (or arms) of eyeglasses, but it is not limited to this. The mounting portion 823 may be in the shape of a helmet or a band for the user to attach it.

[0379] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle.

[0380] Although an example with an imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may also be provided. In other words, the imaging unit 825 is one form of the detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling gesture control with higher accuracy.

[0381] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, housing 821, and mounting unit 823. This eliminates the need for separate audio equipment such as headphones, earphones, or speakers, allowing users to enjoy video and audio simply by wearing the electronic device 800A.

[0382] Electronic devices 800A and 800B may each have input terminals. Cables can be connected to the input terminals to supply video signals from video output devices, power for charging batteries provided within the electronic devices, and so on.

[0383] An electronic device according to one aspect of the present invention may have a function for wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 700A shown in Figure 21A has a function for transmitting information to the earphone 750 through its wireless communication function. Also, for example, the electronic device 800A shown in Figure 21C has a function for transmitting information to the earphone 750 through its wireless communication function.

[0384] The electronic device may have an earphone section. The electronic device 700B shown in Figure 21B has an earphone section 727. For example, the earphone section 727 and the control unit can be connected to each other by a wire. Part of the wiring connecting the earphone section 727 and the control unit may be located inside the housing 721 or the mounting section 723.

[0385] Similarly, the electronic device 800B shown in Figure 21D has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be connected to each other by a wire. Part of the wiring connecting the earphone unit 827 and the control unit 824 may be located inside the housing 821 or the mounting unit 823. Also, the earphone unit 827 and the mounting unit 823 may have magnets. This allows the earphone unit 827 to be fixed to the mounting unit 823 by magnetic force, which is preferable as it makes storage easier.

[0386] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have either an audio input terminal or an audio input mechanism, or both. For example, a sound-collecting device such as a microphone can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0387] Thus, in one aspect of the present invention, the electronic device is preferably of the glasses type (such as electronic device 700A and electronic device 700B) or the goggle type (such as electronic device 800A and electronic device 800B).

[0388] An electronic device according to one aspect of the present invention can transmit information to earphones by wire or wireless means.

[0389] The electronic device 6500 shown in Figure 22A is a portable information terminal that can be used as a smartphone.

[0390] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0391] A display device according to one embodiment of the present invention can be applied to the display unit 6502.

[0392] Figure 22B is a schematic cross-sectional view of the housing 6501 including the end on the microphone 6506 side.

[0393] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, and battery 6518 are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0394] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0395] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. An IC chip 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0396] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, an electronic device with a narrow bezel can be realized.

[0397] Figure 22C shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown to be supported by a stand 7103.

[0398] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0399] The television device 7100 shown in Figure 22C can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0400] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver only) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0401] Figure 22D shows an example of a notebook computer. The notebook computer 7200 includes a casing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. A display unit 7000 is incorporated into the casing 7211.

[0402] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0403] Figures 22E and 22F show examples of digital signage.

[0404] The digital signage 7300 shown in Figure 22E includes a housing 7301, a display unit 7000, and a speaker 7303. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, and a microphone.

[0405] Figure 22F shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0406] In Figures 22E and 22F, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0407] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0408] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000, but also allows users to operate it intuitively. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0409] As shown in Figures 22E and 22F, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411, such as a smartphone, owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0410] The digital signage 7300 or digital signage 7400 can also be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0411] The electronic device shown in Figures 23A to 23G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, a sensor 9007 (including a function for detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), and a microphone 9008, etc.

[0412] In Figures 23A to 23G, a display device according to one embodiment of the present invention can be applied to the display unit 9001.

[0413] The electronic devices shown in Figures 23A to 23G have various functions. For example, they may have functions to display various information (still images, videos, and text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing by various software (programs), a wireless communication function, and a function to read and process programs or data recorded on a recording medium. However, the functions of electronic devices are not limited to these, and they may have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera or the like, and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), and functions to display the captured images on a display unit.

[0414] Details of the electronic equipment shown in Figures 23A to 23G will be explained below.

[0415] Figure 23A is a perspective view showing a personal digital information terminal (PDI) 9101. The PDI 9101 can be used, for example, as a smartphone. The PDI 9101 may also be equipped with a speaker 9003, a connection terminal 9006, and a sensor 9007. Furthermore, the PDI 9101 can display text and image information on multiple surfaces. Figure 23A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS (Social Networking Service), or phone calls, as well as the subject, sender name, and date and time of emails or SNS messages. Other examples include the time, battery level, and signal strength. Alternatively, icons 9050 may be displayed where the information 9051 is displayed.

[0416] FIG. 23B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more sides of a display unit 9001. Here, an example in which information 9052, information 9053, and information 9054 are displayed on different surfaces is shown. For example, the user can also confirm the information 9053 displayed at a position where it can be observed from above the portable information terminal 9102 in a state where the portable information terminal 9102 is stored in the breast pocket of a piece of clothing. For example, the user can check the display without taking the portable information terminal 9102 out of the pocket and determine whether to answer a call.

[0417] FIG. 23C is a perspective view showing a tablet terminal 9103. As an example, the tablet terminal 9103 can execute various applications such as a mobile phone, e-mail, text browsing and creation, music playback, Internet communication, and computer games. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front surface of a housing 9000, an operation key 9005 as an operation button on the left side surface of the housing 9000, and connection terminals 9006 on the bottom surface of the housing 9000.

[0418] FIG. 23D is a perspective view showing a wristwatch-type portable information terminal 9200. The portable information terminal 9200 can be used as, for example, a smartwatch (registered trademark). Further, the display surface of the display unit 9001 is provided to be curved, and display can be performed along the curved display surface. Further, the portable information terminal 9200 can also make a hands-free call by communicating with, for example, a wirelessly communicable headset. Further, the portable information terminal 9200 can also perform data transmission with and charge other information terminals through the connection terminals 9006. Note that the charging operation may be performed by wireless power supply.

[0419] FIGS. 23E to 23G are perspective views showing a foldable portable information terminal 9201. Note that FIG. 23E is a perspective view of the portable information terminal 9201 in a deployed state, FIG. 23G is a perspective view of the portable information terminal 9201 in a folded state, and FIG. 23F is a perspective view of the portable information terminal 9201 in a state midway between changing from one of FIG. 23E and FIG. 23G to the other. The portable information terminal 9201 has excellent portability in the folded state and excellent display listability due to a seamless wide display area in the deployed state. A display unit 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0420] The configurations and the like shown in the present embodiment can be used in appropriate combination with the configurations and the like shown in other embodiments.

[0421] (Embodiment 6) In the present embodiment, an indium oxide film that can be used for a semiconductor layer of a transistor included in a semiconductor device according to one aspect of the present invention will be described.

[0422] In the present specification and the like, indium oxide having at least a crystal part or a crystal region in the film is referred to as crystalline indium oxide (crystal IO) or crystalline indium oxide (crystalline IO). For example, examples of crystal IO or crystalline IO include single-crystal indium oxide, polycrystalline indium oxide, and microcrystalline indium oxide.

[0423] Indium oxide is a semiconductor material having physical properties completely different from those of oxide semiconductors such as In—Ga—Zn oxide (hereinafter also referred to as IGZO) and zinc oxide.

[0424] The carrier concentration dependence of the hole (Hall) mobility of indium oxide, silicon, and IGZO will be described. FIG. 24A is a schematic diagram of the carrier concentration dependence of the hole mobility with respect to silicon (Si) and indium oxide (InO Ｘ ) and FIG. 2B is a schematic diagram of the carrier concentration dependence of the hole mobility with respect to IGZO.

[0425] First, as indicated by the arrows in Figure 24B, IGZO tends to exhibit higher hole mobility as the carrier concentration increases. On the other hand, as indicated by the arrows in Figure 24A, indium oxide tends to exhibit higher hole mobility as the carrier concentration decreases (see Non-Patent Literature 1). This trend is similar to that of silicon, where the lower the concentration of dopants (impurities) in the material, the less impurity scattering occurs and the higher the hole mobility. In other words, the higher the purity and intrinsic nature of indium oxide, the higher its hole mobility. From these results, it can be said that indium oxide, unlike IGZO, is a material with physical properties similar to silicon. Note that the properties of indium oxide shown in Figure 24A are assumed to be those of a single crystal. Therefore, when indium oxide is not a single crystal (for example, polycrystalline), the properties may differ from those shown in Figure 24A.

[0426] In Figure 24A, the low carrier concentration range R1 exhibits extremely high hole mobility, making it a suitable carrier concentration range for, for example, the channel formation region of a transistor. For example, in the case of indium oxide, the range R1 has a carrier concentration of 1 × 10⁻⁶. １５ cm −３ This range includes, for example, 1 × 10 １４ cm −３ The above is 1 x 10 １８ cm −３ The range is as follows: By sufficiently reducing the carrier concentration, the hole mobility value can be increased to 270 cm⁻¹. ２ It can be expected to be raised to the level of / (V・s).

[0427] Furthermore, in indium oxide, the region where the carrier concentration is in the range R1 may contain elements that lower the carrier concentration. Examples of elements that lower the carrier concentration include magnesium, calcium, zinc, cadmium, and copper. By substituting these elements for indium, the carrier concentration can be lowered. Other elements that lower the carrier concentration include nitrogen, phosphorus, arsenic, and antimony. For example, by substituting nitrogen, phosphorus, arsenic, or antimony for oxygen, the carrier concentration can be lowered.

[0428] On the other hand, the range R2 with high carrier concentration has low electrical resistance and can be said to be a suitable range of carrier concentration for applications such as the source and drain regions of a transistor, or for resistors or transparent conductive films. The range R2 is when the carrier concentration value is 1 × 10⁻⁶. ２０ cm −３ This range includes, for example, 1 × 10 １９ cm −３ The above is 1 x 10 ２２ cm −３ The range is as follows: By making the carrier concentration sufficiently high, the resistivity can be increased to 1 × 10⁻⁶. −４ It is expected that the level can be reduced to below Ω·cm.

[0429] Furthermore, in the indium oxide, the region where the carrier concentration is in the range R2 may contain elements that increase the carrier concentration. For example, it is preferable to include elements common to the source and drain electrodes of the transistor. Examples of elements that increase the carrier concentration include titanium, zirconium, hafnium, tantalum, tungsten, molybdenum, tin, silicon, and boron. In particular, it is more preferable to use elements in which the oxide is conductive or semiconducting.

[0430] In this way, indium oxide uses regions with low carrier concentrations for the transistor's channel formation region and regions with high carrier concentrations for the transistor's source and drain regions. In other words, indium oxide is an oxide that allows for valence electron control. In contrast, with IGZO, strain can form in the source and drain regions due to stress on the electrodes in contact with the IGZO, sometimes resulting in the formation of an n-type region. On the other hand, unlike IGZO, indium oxide allows for valence electron control, so it does not require the formation of strain in the film as in IGZO. Less strain in the film is expected to improve reliability. For example, by creating regions with carrier concentrations in the range R1 and range R2 shown in Figure 24A within the indium oxide film, a so-called n-i-n junction (a junction between an n-type region, an i-type region, and an n-type region) can be created. Valence electron control in silicon transistors is generally known. However, valence electron control in indium oxide transistors is a novel technological concept that would not normally be conceived.

[0431] By applying the above technical concept, the indium oxide transistor described herein has two or more, preferably three or more, more preferably four or more, and most preferably five of the following features (1) to (5): (1) High on-current (in other words, high mobility). (2) Low off-current. (3) Normally off is possible. (4) High reliability. (5) High cutoff frequency (fT). For example, the indium oxide transistor described herein has high mobility, low off-current, and is normally off. This transistor is different from a transistor that is high mobility and normally on.

[0432] Next, we will describe indium oxide films applied to transistors. Indium oxide films are preferably crystalline (i.e., they have crystal grains). Examples of films with crystal grains include single-crystal films, polycrystalline films, or amorphous films containing crystal grains (also called microcrystalline films). In particular, polycrystalline films are preferred for indium oxide films, and single-crystal films are more preferred. Single-crystal films do not have crystal grain boundaries. Impurities that inhibit carrier flow (typically insulating impurities, insulating oxides, etc.) tend to segregate at crystal grain boundaries. By using single-crystal films, carrier scattering at crystal grain boundaries can be suppressed, enabling the realization of transistors exhibiting high field-effect mobility. Furthermore, it has the excellent effect of suppressing variations in transistor characteristics caused by these crystal grain boundaries.

[0433] Furthermore, polycrystalline films are preferable because they can reduce carrier scattering and exhibit high field-effect mobility compared to microcrystalline or amorphous films. When using polycrystalline films, it is preferable to use films with the largest possible grain size and few grain boundaries. In a transistor to which a polycrystalline indium oxide film is applied, if there are no grain boundaries in the channel formation region, or if no grain boundaries are observed, the channel formation region is located within the single-crystal region contained in the polycrystalline film, and therefore it can be considered a transistor to which single-crystal indium oxide is applied.

[0434] The crystallinity of indium oxide can be analyzed, for example, by XRD, TEM, or ED. Alternatively, a combination of these methods may be used for analysis.

[0435] Furthermore, in this specification, a semiconductor layer in which no grain boundaries are observed in the channel-forming region, a semiconductor layer in which the channel-forming region is contained within a single crystal grain, or a semiconductor layer in which the direction of the crystal axes is the same in at least two regions within the channel-forming region can be called a single crystal film. Alternatively, a semiconductor layer in which, within a single crystal grain in the channel-forming region, the direction of other crystal axes changes continuously with respect to a certain crystal axis or crystal orientation as the axis of rotation can be called a single crystal film.

[0436] The channel formation region refers to the region within the semiconductor layer that overlaps with (or faces) the gate electrode via the gate insulating layer, and is located between the region in contact with the source electrode and the region in contact with the drain electrode. The current path in the channel formation region is the shortest distance between the source electrode and the drain electrode. Therefore, the crystal grains, grain boundaries, crystal axes, and crystal orientation in the channel formation region can be confirmed by cross-sectional observation including the semiconductor layer, source electrode, and drain electrode.

[0437] The indium oxide film in the channel-forming region is preferable to have a low impurity concentration. Impurities in the indium oxide in the channel-forming region can act as a scattering source for carriers, and thus can cause a decrease in field-effect mobility. Furthermore, these impurities can also inhibit crystal growth in the indium oxide film. Examples of impurities in the indium oxide film include boron and silicon. The concentration of these impurities in the indium oxide film is preferably 0.1% or less, and more preferably 0.01% (100 ppm) or less. Note that elements such as carbon and hydrogen may be present in the deposition gas or precursor during film formation, and may remain in the indium oxide film in higher concentrations than the above-mentioned impurities.

[0438] Furthermore, the indium oxide film in the channel-forming region may contain elements that can become trivalent cations like indium, as long as their crystals maintain a cubic crystal structure (Bixbite type). Examples include Group 13 elements of the periodic table such as gallium and aluminum, and Group 3 elements of the periodic table. Since these elements mainly exist as trivalent cations in the oxide, the carrier concentration of indium oxide can be kept low.

[0439] By using such an indium oxide film in a transistor, the field-effect mobility of the transistor can be increased to 50 cm². ２ / (V·s) or more, preferably 100 cm ２ / (V·s) or more, more preferably 150 cm ２ / (V·s) or more, more preferably 200 cm ２ / (V·s) or more, more preferably 250 cm ２ It can be set to (V・s) or more.

[0440] One of the characteristics of indium oxide films is that they have higher oxygen permeability (diffusivity) compared to IGZO films. As shown in Figure 24C, indium oxide films (InO Ｘ Oxygen (O) diffusing into the indium oxide film passes through the indium oxide film and oxygen molecules (O) ２ It is released as water molecules (H) by reacting with hydrogen contained in the membrane. ２ In some cases, oxygen may be released as (O). Also, if oxygen deficiencies (Vo) exist in the membrane, diffusing oxygen atoms will fill the deficiencies. Indium oxide membranes allow oxygen to diffuse easily, so it can be said that they are more efficient at filling oxygen deficiencies compared to IGZO membranes.

[0441] Thus, because indium oxide films are more likely to reduce oxygen vacancies in the film compared to IGZO films, applying such indium oxide films to transistors makes it possible to realize transistors with extremely high reliability.

[0442] Furthermore, as shown in Figure 24C, the indium oxide film diffuses hydrogen. Hydrogen diffusing into the indium oxide film from the outside permeates the film and forms hydrogen molecules (H ２ It is released as ) or, by reacting with oxygen contained in the membrane, it is released as water molecules.

[0443] Transistors using indium oxide films are storage-type transistors that use electrons as majority carriers. Assuming that the carrier relaxation time is constant, the smaller the effective mass of electrons (carriers), the higher the electron mobility. In other words, by using indium oxide, which has a small effective mass of electrons, in a transistor, the on-current or field-effect mobility of the transistor can be increased.

[0444] Table 1 shows single crystal indium oxide (here, In ２ O ３The effective masses of indium oxide and single-crystal silicon (Si) are shown below. As shown in Table 1, indium oxide is characterized by a small effective electron mass and a large effective hole mass. Furthermore, the effective electron mass of indium oxide is almost independent of the crystal orientation. Therefore, by using crystalline indium oxide in transistors, transistors with high field-effect mobility and high frequency characteristics (also called f-characteristics) can be realized. In addition, because the effective hole mass is large, transistors with extremely low off-currents can be realized. For example, by applying an indium oxide film to a vertical transistor, the off-current per 1 μm of channel width is 1 fA (1 × 10⁻¹⁶) in an environment of 125°C. −１５ A) Less than or equal to, or 1aA (1 × 10 −１８ A) Less than or equal to 1aA (1 × 10) in a room temperature (25°C) environment. −１８ A) Less than or equal to, or 1zA (1 × 10 −２１ A) The following is possible. Also, as shown in Table 1, indium oxide has a smaller effective electron mass and a larger effective hole mass than silicon, so it may be possible to realize a transistor with higher field-effect mobility and lower off-current than a Si transistor.

[0445]

[0446] It is preferable to provide a seed layer so as to be in contact with at least a portion of the crystalline indium oxide film. It is preferable to use a material containing crystals with a small difference in lattice constant (also called lattice mismatch) with the indium oxide for the seed layer. This improves the crystallinity of the indium oxide film. A substrate (e.g., a single-crystal substrate) may be used as one of the layers in contact with at least a portion of the crystalline indium oxide film.

[0447] One method for evaluating the degree of lattice mismatch is to use the following lattice mismatch value. The lattice mismatch Δa [%] of the crystals in the formed film (in this case, the indium oxide film) relative to the crystals in the seed layer is given by Δa = ((L １ -L ２ ) / L ２ It is calculated as ) × 100. Here L１ L is the length of the unit cell vector of the crystals in the formed film, or the lattice constant. ２ This is the length of the unit cell vector of the crystal in the seed layer, or the lattice constant.

[0448] The lattice mismatch Δa between the seed layer and the indium oxide film is preferably small in absolute value, and most preferably zero. For example, Δa can be -5% or more and 5% or less, preferably -4% or more and 4% or less, more preferably -3% or more and 3% or less, and even more preferably -2% or more and 2% or less.

[0449] Here, the indium oxide crystal has a cubic structure (bixbite type). For example, yttria-stabilized zirconia (YSZ) crystals can have a cubic structure (fluorite type). The lattice mismatch of the indium oxide crystal with respect to the cubic YSZ crystal is in the range of -2% to 2%, and a single crystal film of indium oxide can be epitaxially grown on a YSZ substrate.

[0450] Furthermore, the crystal structure of the seed layer and the crystal structure of the indium oxide film do not necessarily have to be the same in terms of crystal system or crystal orientation. For example, a film with a hexagonal or trigonal crystal structure can be used beneath an indium oxide film with a cubic crystal structure. For example, by setting the crystal orientation of the surface of the seed layer to

[001] and the crystal orientation of the underside of the indium oxide film to

[111] , the requirements related to crystal orientation necessary for epitaxial growth can be met. Examples of hexagonal or trigonal crystals include wurtzite-type structures and YbFe. ２ O ４ Type structure, Yb ２ Fe ３ O ７ These include type structures and their modified type structures. YbFe ２ O ４ Type structure or Yb ２ Fe ３ O ７ An example of a crystal having a type structure is IGZO.

[0451] This embodiment can be implemented in appropriate combination with at least some of the other embodiments described in this specification as needed.

[0452] (Supplementary Note Regarding Description in this Specification, etc.) The above embodiments and the description of each configuration in the embodiments are supplemented as follows.

[0453] "Connection" in this specification includes, for example, "electrical connection". In order to define the connection relationship of circuit elements as an object, when expressing "electrical connection", "electrical connection" includes, for example, "direct connection" and "indirect connection". "A and B are directly connected" means, for example, that A and B are connected without passing through a circuit element (for example, a transistor or a switch, etc. Note that wiring is not a circuit element) between them. On the other hand, "A and B are indirectly connected" means, for example, that A and B are connected through one or more circuit elements between them.

[0454] Here, when we define "A and B are indirectly connected," it refers to the following type of connection, as an example: That is, assuming the circuit is operating, if there are times during the circuit's operation when electrical signals are exchanged or potential interactions occur between A and B, then such a circuit can be defined as having "A and B indirectly connected" as a physical object. Even if there are times when no electrical signals are exchanged or potential interactions occur between A and B, if there are times during the circuit's operation when electrical signals are exchanged or potential interactions occur between A and B, then it can be defined as having "A and B indirectly connected." Note that "A and B are indirectly connected" is a definition of the connection relationship between circuit elements as a physical object. Therefore, for example, even if no power supply voltage is supplied to the circuit and the circuit is not operating, the circuit can still be defined as having "A and B indirectly connected" as a physical object (however, as an example, this is limited to cases where, when power supply voltage is supplied to the circuit and the circuit is operating, electrical signals are exchanged or potential interactions occur between A and B during the circuit's operation).

[0455] The following are specific examples of "indirect connections". First, an example of a case where "A and B are indirectly connected" is when A and B are connected via the source and drain of one or more transistors, as shown in Figures 25A1 and 25A2. Another example of a case where "A and B are indirectly connected" is when A and B are connected via one or more switches. When "A and B are indirectly connected", assuming the circuit is operating, one transistor between A and B will be in an ON state, conducting state, or a state in which current can flow at least once. Note that when "A and B are indirectly connected", this includes cases where one transistor between A and B is in an OFF state or a non-conducting state. When "A and B are indirectly connected" and multiple transistors are connected between A and B, assuming the circuit is operating, each of the multiple transistors between A and B will be in an ON state, conducting state, or a state in which current can flow at least once. In other words, when "A and B are indirectly connected," it is not necessary for all of the transistors to be in an ON state, a conducting state, or a state in which current can flow simultaneously. Therefore, when "A and B are indirectly connected," it includes cases where the transistors between A and B are in an OFF state or a non-conducting state at the same time or at different times. As another example, as shown in Figure 25A3, when A and C are connected via the source and drain of transistor TrP, and B and C are connected via the source and drain of transistor TrQ, it can be defined as "A and C are indirectly connected," "B and C are indirectly connected," or "A and B are indirectly connected." However, as will be discussed later, if a constant potential V is supplied to C from a power supply or GND, it can be said that "A and C are indirectly connected," or "B and C are indirectly connected," but it cannot be said that "A and B are indirectly connected."

[0456] Having shown examples of cases where a connection can be considered "indirect" and cases where it cannot, let's look at another example of a case where a connection cannot be considered "indirect." Even if electrical signals are exchanged or potential interactions occur between A and B during the operation of the circuit, there are exceptional cases where it cannot be said that "A and B are indirectly connected." An example of such an exceptional case is when A and B are connected via an insulator. In other words, when A and B are connected via an insulator, it cannot be said that "A and B are indirectly connected." A specific example of when A and B are connected via an insulator is when a capacitive element is connected between A and B, as shown in Figure 25A4. Another example of when A and B are connected via an insulator is when a transistor gate insulating film is interposed between A and B, as shown in Figure 25A5. In this case, it cannot be said that "A (the gate of the transistor) and B (the source or drain of the transistor) are indirectly connected."

[0457] Another example of a situation where it cannot be said that "A and B are indirectly connected" is when there is no timing for the exchange of electrical signals or potential interaction between A and B. An example of this is shown in Figures 25A6 and 25A7, where multiple transistors are connected via sources and drains in the path from A to B, and a constant potential V is supplied to the nodes between the transistors from a power source or GND. In this case, it cannot be said that "A and B are indirectly connected," but it can be said that "A and V are indirectly connected," or "B and V are indirectly connected." In Figure 25A3, if A and C are connected via the source and drain of transistor TrP, and B and C are connected via the source and drain of transistor TrQ, and a constant potential V is supplied to C from a power supply or GND, then the connection relationship is the same as in Figures 25A6 and 25A7, so it cannot be said that "A and B are indirectly connected," but it can be said that "A and C are indirectly connected," or "B and C are indirectly connected."

[0458] As shown above, we have provided an example of "indirect connection." As an example, the provisions for "indirect connection" are included in the provisions for "electrical connection," so if "A and B are indirectly connected," then "A and B are electrically connected."

[0459] Next, we will show specific examples of "direct connection." Examples of cases where "A and B are directly connected" include cases where A and B are connected without a circuit element in between, as shown in Figures 25B1, 25B2, and 25B3. Furthermore, as shown in Figures 25B4 and 25B5, when A and B are connected to a power source that supplies a constant potential V, or to GND, without a circuit element in between, we can say that "A and B are directly connected," "A and V are directly connected," or "B and V are directly connected." Furthermore, as shown in Figure 25B6, even when A (or B) is connected to a constant potential V via the source and drain of a transistor, we can say that "A and B are directly connected." Furthermore, since A and V, or B and V, are connected via the source and drain of a transistor, they cannot be said to be directly connected, and we can say that "A and V are indirectly connected," or "B and V are indirectly connected."

[0460] As shown above, an example of "direct connection" has been given, but as an example, since the provisions for "direct connection" are included in the provisions for "electrical connection," if "A and B are directly connected," then "A and B are electrically connected."

[0461] Furthermore, in this specification, the term "resistive element" can refer to, for example, a circuit element or wiring having a resistance value higher than 0 Ω. Therefore, in this specification, the term "resistive element" includes, for example, wiring having a resistance value, a transistor, diode, or coil through which current flows from drain to source. Therefore, the term "resistive element" can be replaced with terms such as "resistance," "load," or "region having a resistance value." Conversely, the terms "resistance," "load," or "region having a resistance value" can be replaced with terms such as "resistive element." The resistance value can be, for example, preferably 1 mΩ or more and 10 Ω or less, more preferably 5 mΩ or more and 5 Ω or less, and even more preferably 10 mΩ or more and 1 Ω or less. Also, for example, 1 Ω or more and 1 × 10 ９ It may also be less than or equal to Ω.

[0462] Furthermore, when wiring is used as a resistive element, the resistance value of the resistive element may be determined by the length of the wiring. Alternatively, the resistive element may use a conductor with a different resistivity than the conductor used as the wiring. Or, when a semiconductor is used as a resistive element, the resistance value of the resistive element may be determined by doping the semiconductor with impurities.

[0463] Furthermore, in this specification, "capacitive element" may refer to, for example, a circuit element having a capacitance value higher than 0F, a region of wiring having a capacitance value higher than 0F, parasitic capacitance, or the gate capacitance of a transistor. Therefore, in this specification, "capacitive element" is not limited to a circuit element including a pair of electrodes and a dielectric material contained between the electrodes. "Capacitive element" includes, for example, parasitic capacitance occurring between wiring, or gate capacitance occurring between one of the source or drain of a transistor and the gate. Also, for example, terms such as "capacitive element," "parasitic capacitance," or "gate capacitance" can be replaced with terms such as "capacitance." Conversely, the term "capacitance" can be replaced with terms such as "capacitive element," "parasitic capacitance," or "gate capacitance." Furthermore, the term "pair of electrodes" in "capacitive element" can be replaced with, for example, "pair of conductors," "pair of conductive regions," or "pair of regions." The capacitance value can be, for example, 0.05 fF or more and 10 pF or less. Alternatively, for example, it may be set to between 1 pF and 10 μF.

[0464] Furthermore, in this specification, a transistor has three terminals called the gate (also called the gate terminal, gate region, or gate electrode), the source (also called the source terminal, source region, or source electrode), and the drain (also called the drain terminal, drain region, or drain electrode). A transistor also has a region between the drain and the source where a channel is formed (also called the channel-forming region). A transistor can pass current between the source and the drain through the channel-forming region. The channel-forming region is the region where current primarily flows. The gate is a control terminal that controls the amount of current flowing through the channel-forming region between the source and the drain. The two terminals that function as either the source or the drain are the input and output terminals of the transistor.

[0465] The two input / output terminals function as either a source or a drain, depending on the transistor's conductivity type (n-channel or p-channel) and the potential applied to its three terminals. Furthermore, the functions of the source and drain may be reversed, for example, when the direction of current changes during circuit operation. Therefore, in this specification, the terms "source" and "drain" are interchangeable. Additionally, when describing the connection relationships of a transistor, the notation "one of the source or drain" (or the first electrode or first terminal) or "the other of the source or drain" (or the second electrode or second terminal) is used.

[0466] Furthermore, depending on its structure, a transistor may have a back gate in addition to the three terminals described above. In this case, in this specification, one of the gates or back gates of the transistor may be referred to as the first gate, and the other of the gates or back gates of the transistor may be referred to as the second gate. Moreover, in the same transistor, the terms "gate" and "back gate" may be interchangeable. Also, if a transistor has three or more gates, in this specification, each gate may be referred to as, for example, the first gate, the second gate, or the third gate.

[0467] In this specification, a transistor with a multi-gate structure having two or more gate electrodes can be used. In a multi-gate transistor, the channel formation regions are connected in series, resulting in a structure where multiple transistors are connected in series. Therefore, a multi-gate transistor can reduce the off-current and improve the transistor's breakdown voltage (improve reliability). Furthermore, when a multi-gate transistor operates in the saturation region of the Id (source-drain current)-Vds (drain-source voltage) characteristic, even if the voltage between the drain and source changes, the current between the drain and source does not change much, and an Id-Vds characteristic with a flat slope can be obtained. A transistor with an Id-Vds characteristic with a flat slope can realize an ideal current source circuit or an active load with a very high resistance value. As a result, a transistor with an Id-Vds characteristic with a flat slope can realize, for example, a differential circuit or a current mirror circuit with good characteristics.

[0468] Furthermore, in this specification, when a single circuit element is shown in a circuit diagram, that circuit element may have multiple circuit elements. For example, when one resistor is shown in a circuit diagram, that resistor includes cases where two or more resistors are connected in series. Also, for example, when one capacitor is shown in a circuit diagram, that capacitor includes cases where two or more capacitors are connected in parallel. Also, for example, when one transistor is shown in a circuit diagram, that transistor includes cases where two or more transistors are connected in series and the gates of each transistor are connected to each other. Similarly, for example, when one switch is shown in a circuit diagram, that switch includes cases where two or more transistors are connected in series or in parallel and the gates of each transistor are connected to each other.

[0469] Furthermore, in this specification, the term "node" can be replaced with other terms such as "terminal," "wiring," "electrode," "conductive layer," "conductor," or "impurity region," depending on the circuit configuration or device structure. Also, for example, "terminal" or "wiring" can be replaced with "node."

[0470] Furthermore, in this specification, "voltage" and "potential" may be used interchangeably as appropriate. "Voltage" refers to the potential difference from a reference potential. For example, if the reference potential is the ground potential (earth potential), then "voltage" can be replaced with "potential." Note that the ground potential does not necessarily mean 0V. Also, potential is relative. That is, when the reference potential changes, the potential applied to wiring, the potential applied to circuits, or the potential output from circuits also changes.

[0471] Furthermore, in this specification, the terms "high-level potential" (also referred to as "high-level potential," "H potential," or "H") or "low-level potential" (also referred to as "low-level potential," "L potential," or "L") do not mean a specific potential. For example, if two wires are both described as "functioning as wires that supply a high-level potential," the high-level potentials provided by each wire do not have to be equal. Similarly, if two wires are both described as "functioning as wires that supply a low-level potential," the low-level potentials provided by each wire do not have to be equal.

[0472] Furthermore, in this specification, "electric current" refers to the phenomenon of electric charge movement (electrical conduction). For example, the statement "electrical conduction of positively charged elements is occurring" can be rephrased as "electrical conduction of negatively charged elements is occurring in the opposite direction." Therefore, in this specification, unless otherwise specified, "electric current" refers to the phenomenon of electric charge movement (electrical conduction) associated with the movement of carriers. Carriers here include, for example, electrons, holes, anions, cations, or complex ions. Note that carriers differ depending on the system through which the current flows (for example, semiconductors, metals, electrolytes, or in a vacuum). Also, for example, the "direction of current" in wiring is the direction in which positive carriers move and is expressed as a positive current quantity. In other words, the direction in which negative carriers move is the opposite direction to the direction of current and is expressed as a negative current quantity. Therefore, in this specification, if there is no specification regarding the positive or negative (or direction) of the current, a statement such as "current flows from element A to element B" may be rephrased as "current flows from element B to element A," etc. Also, a statement such as "current is input to element A" may be rephrased as "current is output from element A," etc.

[0473] Furthermore, in this specification, the ordinal numbers "first," "second," or "third" are used to avoid confusion of constituent elements. Therefore, they do not limit the number of constituent elements, nor do they limit the order of the constituent elements. For example, a constituent element designated as "first" in one embodiment of this specification may be designated as "second" in another embodiment or claim. Also, for example, a constituent element designated as "first" in one embodiment of this specification may be omitted in another embodiment or claim.

[0474] Furthermore, in this specification, phrases indicating arrangement, such as "above," "below," "upward," or "downward," are sometimes used for convenience to explain the positional relationships between components with reference to the drawings. The positional relationships between components change as appropriate depending on the direction in which each component is depicted. Therefore, the phrases indicating arrangement described in this specification are not limited to those described and can be appropriately rephrased depending on the situation. For example, the expression "insulator located on the upper surface of the conductor" can be rephrased as "insulator located on the lower surface of the conductor" by rotating the orientation of the drawing by 180 degrees. Similarly, the expression "insulator located on the upper surface of the conductor" can be rephrased as "insulator located on the left (or right) side of the conductor" by rotating the orientation of the drawing by 90 degrees.

[0475] Furthermore, the terms "above" or "below" do not limit the positional relationship of the components to being directly above or below each other and in direct contact. For example, the expression "electrode B on insulating layer A" does not require that electrode B be formed in direct contact with insulating layer A, and does not exclude cases where other components are included between insulating layer A and electrode B.

[0476] Furthermore, in this specification, terms such as "row" or "column" may be used to describe the matrix-like arrangement of components and their positional relationships. The positional relationships between components change as appropriate depending on the direction in which each component is depicted. Therefore, terms such as "row" or "column" as described in this specification are not limited to these and can be appropriately rephrased depending on the situation. For example, the expression "row direction" can be rephrased as "column direction" by rotating the orientation of the diagram shown by 90 degrees.

[0477] Furthermore, in this specification, terms such as "overlapping" do not limit the state of the stacking order of the constituent elements. For example, the expression "electrode B overlapping insulating layer A" is not limited to a state in which electrode B is formed on top of insulating layer A. The expression "electrode B overlapping insulating layer A" does not exclude, for example, a state in which electrode B is formed below insulating layer A, or a state in which electrode B is formed to the right (or left) of insulating layer A.

[0478] Furthermore, in this specification, the terms "adjacent" or "proximity" are not limited to direct contact between components. For example, the expression "electrode B adjacent to insulating layer A" does not require that insulating layer A and electrode B be formed in direct contact, and does not exclude cases where other components are included between insulating layer A and electrode B.

[0479] Furthermore, in this specification, terms such as "film" or "layer" may be interchangeable depending on the context. For example, the term "conductive layer" may be changed to the term "conductive film." For example, the term "insulating film" may be changed to the term "insulating layer." Furthermore, terms such as "film" or "layer" may be replaced with other terms depending on the context, without using those terms. For example, the terms "conductive layer" or "conductive film" may be changed to the term "conductor." Furthermore, the term "conductor" may be changed to the terms "conductive layer" or "conductive film." For example, the terms "insulating layer" or "insulating film" may be changed to the term "insulator." Furthermore, the term "insulator" may be changed to the terms "insulating layer" or "insulating film."

[0480] Furthermore, in this specification, terms such as "electrode," "wiring," or "terminal" do not functionally limit these components. For example, "electrode" may be used as part of "wiring," and vice versa. Moreover, the terms "electrode" or "wiring" also include cases where multiple "electrodes" or "wiring" are formed as a single unit. Similarly, for example, "terminal" may be used as part of "wiring" or "electrode," and vice versa. Furthermore, the term "terminal" also includes cases where multiple "electrodes," "wiring," or "terminals" are formed as a single unit. Therefore, for example, "electrode" can be part of "wiring" or "terminal." Also, for example, "terminal" can be part of "wiring" or "electrode." In addition, terms such as "electrode," "wiring," or "terminal" may be replaced with terms such as "region."

[0481] Furthermore, in this specification, terms such as "wiring," "signal line," or "power line" may be interchangeable depending on the context. For example, the term "wiring" may be changed to the term "signal line." Similarly, the term "wiring" may be changed to the term "power line." The same applies in reverse; for example, terms such as "signal line" or "power line" may be changed to the term "wiring." Similarly, terms such as "power line" may be changed to the term "signal line." Similarly, the same applies in reverse; for example, terms such as "signal line" may be changed to the term "power line." Furthermore, the term "potential" applied to wiring may be changed to the term "signal," depending on the context. Similarly, the same applies in reverse; for example, terms such as "signal" may be changed to the term "potential."

[0482] Furthermore, in this specification, "switch" means a device having multiple terminals and a function to switch (select) between continuity and non-continuity between those terminals. For example, if a switch has two terminals and there is continuity between both terminals, the switch is said to be in a "conductive state" or "on state." If there is no continuity between both terminals, the switch is said to be in a "non-conductive state" or "off state." Note that the act of switching the switch to either a continuative state or a non-conductive state, or maintaining either a continuative state or a non-conductive state, may be referred to as "controlling the continuity state."

[0483] In short, a switch is a device that controls whether or not an electric current flows. Alternatively, a switch is a device that selects and switches the path through which an electric current flows. Examples of switches include electrical switches and mechanical switches. In other words, a switch is not limited to a specific type.

[0484] Examples of electrical switches include transistors (e.g., bipolar transistors or MOS transistors), diodes (e.g., PN diodes, PIN diodes, Schottky diodes, MIM (Metal Insulator Metal) diodes, MIS (Metal Insulator Semiconductor) diodes, or diode-connected transistors), or logic circuits combining these. Note that when a transistor is used simply as a switch, its polarity (conductivity type) is not particularly limited.

[0485] One example of a mechanical switch is a switch using MEMS technology. This switch has mechanically movable electrodes, and the movement of these electrodes selects between a conductive state and a non-conductive state.

[0486] In this specification, the "channel length" of a transistor may refer, for example, to the distance between the source and drain in the region where the semiconductor (or the part of the semiconductor through which current flows when the transistor is ON) and the gate overlap, or to the distance between the source and drain in the region where the channel is formed.

[0487] Furthermore, in this specification, the "channel width" of a transistor may refer, for example, to the length of the portion where the source and drain face each other in the region where the semiconductor (or the portion in the semiconductor through which current flows when the transistor is ON) and the gate overlap, or to the length of the portion where the source and drain face each other in the region where the channel is formed.

[0488] In this specification, terms such as "substrate," "wafer," or "die" do not functionally limit these components. For example, terms such as "substrate," "wafer," or "die" may be interchangeable depending on the context.

[0489] In this specification, "parallel" does not necessarily mean strictly parallel. Therefore, the term "parallel" may be replaced as appropriate with terms such as "approximately parallel," "roughly parallel," or "substantially parallel." "Parallel," "approximately parallel," "roughly parallel," or "substantially parallel" may include, for example, a state in which two lines or planes are arranged at an angle of -5 degrees or more and 5 degrees or less. Or, it may include a state in which two lines or planes are arranged at an angle of -10 degrees or more and 10 degrees or less. Or, it may include a state in which two lines or planes are arranged at an angle of -30 degrees or more and 30 degrees or less. Therefore, "parallel" may mean, for example, "parallel or roughly parallel." Also, "perpendicular" does not necessarily mean strictly perpendicular. Therefore, the term "perpendicular" may be replaced as appropriate with terms such as "approximately perpendicular," "roughly perpendicular," or "substantially perpendicular." "Perpendicular," "approximately perpendicular," "roughly perpendicular," or "substantially perpendicular" may include, for example, a state in which two lines or planes are arranged at an angle of 85 degrees or more and 95 degrees or less. Alternatively, it may include a state in which two lines or planes are positioned at an angle of 80 degrees or more and 100 degrees or less. Alternatively, it may include a state in which two lines or planes are positioned at an angle of 60 degrees or more and 120 degrees or less. Therefore, "perpendicular" may mean, for example, "perpendicular or approximately perpendicular."

[0490] In this specification, "heights matching" means that, in a cross-sectional view, the heights from a reference surface (for example, a flat surface such as the substrate surface) are equal. For example, in the manufacturing process of semiconductor devices, planarization may expose the surfaces of one or more layers. In this case, the heights of the surfaces to be planarized will be equal from the reference surface. However, depending on the processing apparatus, processing method, or material of the surface to be processed during the planarization process, the heights of the multiple layers may not be exactly equal. In this specification, this is also referred to as "heights matching." For example, if there are two layers with different heights relative to a reference surface (here, a first layer and a second layer), the heights matching are also referred to if the difference between the height of the top surface of the first layer and the height of the top surface of the second layer is 20 nm or less. Therefore, "heights matching" may mean, for example, "heights matching or approximately matching."

[0491] In this specification, "edges coincide" means that, when viewed from above, at least a portion of the contours of the stacked layers overlap. For example, this includes cases in the manufacturing process of semiconductor devices where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the contour of the upper layer may be located inside the contour of the lower layer, or the contour of the upper layer may be located outside the contour of the lower layer. In this specification, this is also referred to as "edges coincide." Therefore, "edges coincide" may mean, for example, "edges coincide or roughly coincide."

[0492] In this specification, when we use terms such as "identical," "same," "equal," "simultaneous," "consistent," or "uniform" (including their synonyms) with respect to count values ​​and measured values, or with respect to objects, methods, and events that can be converted to count values ​​or measured values, these terms shall include an error margin of plus or minus 20%, unless otherwise explicitly stated. Therefore, for example, "identical" may mean "identical or approximately identical," "same" may mean "same or approximately the same," "equal" may mean "equal or approximately equal," "simultaneous" may mean "simultaneous or approximately simultaneous," "consistent" may mean "consistent or approximately consistent," and "uniform" may mean "uniform or approximately uniform."

[0493] In this specification, semiconductor impurities refer to elements other than the main components constituting the semiconductor. For example, elements with a concentration of less than 0.1 atomic percent are impurities. The presence of impurities in a semiconductor can cause, for example, an increase in the defect level density, a decrease in carrier mobility, or a decrease in crystallinity. In the case of an oxide semiconductor, impurities that alter the properties of the semiconductor include, for example, Group 1 elements, Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, or transition metals other than the main components of the oxide semiconductor. In particular, examples include hydrogen (which is also found in water), lithium, sodium, silicon, boron, phosphorus, carbon, or nitrogen. In oxide semiconductors, for example, the presence of impurities can lead to the formation of oxygen vacancies in the oxide semiconductor.

[0494] In this specification, "metal oxide" refers to an oxide of a metal in a broad sense. Metal oxides are classified into, for example, oxide insulators, oxide conductors (including transparent oxide conductors), or oxide semiconductors (also called oxide semiconductors or simply OS). For example, when a metal oxide is used in a semiconductor including the channel formation region of a transistor, the metal oxide may be referred to as an oxide semiconductor. In other words, when a metal oxide is used to constitute the channel formation region of a transistor having at least one of amplification, rectification, and switching functions, the metal oxide can be referred to as a metal oxide semiconductor. Furthermore, the term "OS transistor" can be replaced with "a transistor having a metal oxide or oxide semiconductor."

[0495] Furthermore, in this specification, metal oxides containing nitrogen may also be collectively referred to as metal oxides. Additionally, metal oxides containing nitrogen may be called metal oxide nitrides.

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Claims

It comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a capacitive element, a light-emitting element, and an image signal input section. The aforementioned image signal input unit has an input terminal, an output terminal, and a control terminal. The source or drain of the first transistor is electrically connected to the source or drain of the second transistor and to the source or drain of the third transistor. The source or drain of the first transistor, the other of which is electrically connected to the output terminal, The source or drain of the third transistor is electrically connected to one of the source or drains of the fourth transistor and to one of the source or drains of the fifth transistor. The gate of the third transistor is electrically connected to one terminal of the capacitive element, to the other source or drain of the fifth transistor, and to one source or drain of the sixth transistor. The control terminal is electrically connected to the other of the source or drain of the second transistor and to the other terminal of the capacitive element. The source or drain of the fourth transistor is electrically connected to one terminal of the light-emitting element. The image signal input unit has the function of converting the image signal supplied from the input terminal based on the potential supplied to the control terminal and outputting it to the output terminal. Semiconductor equipment. 　 In claim 1, Each of the first to fourth transistors is a p-type transistor. Semiconductor equipment. 　 In claim 1, The fifth and sixth transistors are each n-type transistors. Semiconductor equipment. 　 In claim 1, Each of the first to fourth transistors contains silicon in the semiconductor layer in which the channel is formed. Semiconductor equipment. 　 In claim 1, Each of the fifth and sixth transistors includes an oxide semiconductor in the semiconductor layer in which the channel is formed. Semiconductor equipment. 　 In claim 5, The oxide semiconductor contains indium, Semiconductor equipment. 　 It comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a capacitive element, and a light-emitting element. The seventh transistor has a back gate, The source or drain of the first transistor is electrically connected to the source or drain of the second transistor and to the source or drain of the third transistor. The source or drain of the first transistor is electrically connected to the source or drain of the seventh transistor. The source or drain of the third transistor is electrically connected to one of the source or drains of the fourth transistor and to one of the source or drains of the fifth transistor. The gate of the third transistor is electrically connected to one terminal of the capacitive element, to the other source or drain of the fifth transistor, and to one source or drain of the sixth transistor. The back gate of the seventh transistor is electrically connected to the other of the source or drain of the second transistor and to the other terminal of the capacitive element. The source or drain of the fourth transistor, the other of which has the function of being electrically connected to one terminal of the light-emitting element. Semiconductor equipment. 　 In claim 7, Each of the first to fourth transistors is a p-type transistor. Semiconductor equipment. 　 In claim 7, Each of the fifth to seventh transistors is an n-type transistor. Semiconductor equipment. 　 In claim 7, Each of the first to fourth transistors contains silicon in the semiconductor layer in which the channel is formed. Semiconductor equipment. 　 In claim 7, Each of the fifth to seventh transistors includes an oxide semiconductor in the semiconductor layer in which the channel is formed. Semiconductor equipment. 　 In claim 11, The oxide semiconductor contains indium, Semiconductor equipment.

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