Magnetic recording medium, method for manufacturing magnetic recording medium, magnetic storage apparatus, and electronic device

Abstract

A magnetic recording medium, a method for manufacturing a magnetic recording medium, a magnetic storage apparatus, and an electronic device. The magnetic recording medium comprises a substrate, a seed layer and a magnetic medium layer, wherein the seed layer is formed on the substrate, the seed layer comprises seed units arranged in a patterned array, the magnetic medium layer is formed on the seed layer, the magnetic medium layer comprises magnetic units arranged in a patterned array, the magnetic units correspond to the seed units on a one-to-one basis to form magnetic islands, and non-ferromagnetic material portions formed by co-deposition with the magnetic units are provided between the magnetic islands. With such a configuration, magnetic islands formed by means of co-deposition can be orderly arranged at intervals, thereby effectively improving the disk storage density; in addition, the process implementation cost of a patterned seed layer is relatively low, and magnetic units and non-ferromagnetic material portions between the magnetic islands are formed by means of co-deposition, so that good processability is achieved while meeting the requirement for the disk storage density, thereby rationally reducing the product implementation cost.

Description

Magnetic recording media, methods for manufacturing magnetic recording media, magnetic storage devices and electronic devices

[0001] This application claims priority to Chinese Patent Application No. 202411474572.3, filed on October 21, 2024, entitled "Magnetic Recording Medium, Method for Manufacturing Magnetic Recording Medium, Magnetic Storage Device and Electronic Device", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of terminal equipment technology, and in particular to a magnetic recording medium, a method for manufacturing a magnetic recording medium, a magnetic storage device, and an electronic device. Background Technology

[0003] A hard disk drive (HDD) is the primary data storage device in a computer. HDDs use magnetic media to store data, which is accessed via read / write heads on an actuator arm. The magnetic media determines the storage density of the recording cells and affects the stability and read / write performance of the HDD.

[0004] Conventional hard disk access is based on perpendicular magnetic recording (PMR) media, combined with technologies such as heat-assisted magnetic recording (HAMR), achieving a storage density of up to 2 Tb / in². With technological advancements and the increasing demand for HDD storage capacity, a bit-patterned media (BPM) technology has been proposed to further improve storage density. This technology records information on an ordered, patterned, isolated array of magnetic islands, with each island storing one bit. Based on the highly ordered nature of BPM magnetic media, its theoretical storage density can reach 10–100 Tbit / in². 2 In engineering implementation, the dielectric layer patterning process has become a key technical bottleneck for the effective application of BPM technology. Summary of the Invention

[0005] This application provides a magnetic recording medium, a method for manufacturing the magnetic recording medium, a magnetic storage device, and an electronic device, which can effectively improve manufacturability and reduce product realization costs while meeting storage performance requirements.

[0006] The first aspect of this application provides a magnetic recording medium comprising a substrate, a seed layer, and a magnetic media layer. The seed layer is formed on the substrate and includes a patterned array of seed units. The magnetic media layer is formed on the seed layer and includes a patterned array of magnetic units. Each magnetic unit corresponds to one of the seed units to form a magnetic island, and each magnetic island has a non-ferromagnetic material portion co-deposited with the magnetic units. Each magnetic island can record 1 bit of data. This arrangement allows the co-deposited magnetic islands to be arranged in an orderly and spaced manner, effectively increasing disk storage density. Furthermore, the patterned seed layer has relatively low manufacturing costs, and the co-deposited magnetic units and the non-ferromagnetic material portions between the magnetic islands, while meeting disk storage density requirements, offer good manufacturability and can reasonably reduce product implementation costs.

[0007] In practical applications, the seed layer is formed on the substrate, including cases where it is formed directly on the substrate and cases where it is formed on the substrate through an intermediate layer.

[0008] Based on the first aspect, this application also provides a first implementation of the first aspect: the magnetic dielectric layer is a single layer, and the material of the magnetic dielectric layer is an iron-platinum alloy. In this way, while achieving stable growth to form patterned magnetic units, it also exhibits better anisotropy.

[0009] For example, the thickness of the magnetic dielectric layer can be 5 nm to 20 nm.

[0010] Based on the first aspect, this application also provides a second implementation of the first aspect: the magnetic medium layer includes a first magnetic medium layer and a second magnetic medium layer. The first magnetic medium layer is made of a hard magnetic material, and the second magnetic medium layer is made of a soft magnetic material. The first magnetic medium layer is formed on a seed layer, and the second magnetic medium layer is formed on the first magnetic medium layer. The first magnetic medium layer includes a patterned array of first magnetic units, and the second magnetic medium layer includes a patterned array of second magnetic units, with the first and second magnetic units corresponding one-to-one to form magnetic units. Thus, based on the combination of hard and soft magnetic materials, the coercivity of the magnetic medium can be reduced while maintaining a certain degree of anisotropy, and the switching field of the hard magnetic layer can be reduced while maintaining necessary thermal stability, thereby reducing the energy requirements during data writing and effectively improving the signal-to-noise ratio. Simultaneously, writing operations can be completed quickly and easily, thereby simplifying the head-side setup and reasonably controlling the overall implementation cost of the hard disk.

[0011] In practical applications, the material of the first magnetic medium layer can be an iron-platinum (FePt) alloy, such as an L10 phase FePt alloy, and the material of the second magnetic medium layer can be an Fe alloy, such as an Al phase FePt alloy.

[0012] For example, the thickness of the first magnetic medium layer can be 5nm to 20nm, and the thickness of the second magnetic medium layer can be 1nm to 10nm.

[0013] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, this application also provides a third embodiment of the first aspect: the material of the non-ferromagnetic material part is a non-metallic substance, such as, but not limited to, silicon dioxide. This configuration ensures the accuracy of read or write operations while maintaining compatibility with the co-deposition growth performance of the magnetic dielectric layer material, growing a low-roughness disk surface, and effectively alleviating flight altitude stability issues.

[0014] In practical applications, the storage density based on the magnetic recording medium provided in this application can reach 2Tbit / in. 2 ~50Tbit / in 2 .

[0015] Based on the first aspect, or the first, second, or third implementation of the first aspect, this application also provides a fourth implementation of the first aspect: the seed layer includes a first seed layer and a second seed layer, the second seed layer is formed on the first seed layer, the second seed layer includes seed units, and a magnetic dielectric layer is formed on the second seed layer. With this configuration, based on the first seed layer, a relatively thin second seed layer can be configured, which can be formed using a low aspect ratio NIL mask. Compared to the implementation method of forming patterned magnetic islands using NIL technology after the magnetic dielectric layer is fabricated, this application embodiment can effectively improve the lifespan of the mask and reasonably control the processing cost. In other implementation schemes, patterned seed units can be formed using near-field direct writing, which can also achieve patterning at low cost.

[0016] Based on the fourth embodiment of the first aspect, this application also provides a fifth embodiment of the first aspect: the material of the first seed layer is a chromium alloy, such as, but not limited to, a chromium-ruthenium alloy, and the material of the second seed layer is platinum or ruthenium. Thus, the platinum-based design facilitates the achievement of good growth and forming accuracy of the magnetic units, improving product yield.

[0017] For example, the thickness of the first seed layer can be 10nm to 100nm, and the thickness of the second seed layer can be 2nm to 10nm.

[0018] Based on the fourth or fifth embodiment of the first aspect, this application also provides a sixth embodiment of the first aspect: an oxide portion is formed on the surface of the first seed layer below the non-ferromagnetic material portion; that is, the oxide portion is formed on the surface of the first seed layer between various sub-units. This further improves the co-deposition growth accuracy and increases product yield.

[0019] For example, the thickness of the oxide portion can be 1 nm to 5 nm.

[0020] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, this application also provides a seventh embodiment of the first aspect: the seed layer is a single layer, the material of the seed layer is platinum, ruthenium, magnesium oxide, or titanium nitride, and the thickness is 10nm to 20nm. With this configuration, the process cost of patterning the seed layer is also relatively low. By co-depositing to form the non-ferromagnetic material portions between magnetic units and magnetic islands, good processability is achieved while meeting the disk storage density requirements.

[0021] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, or the fourth embodiment of the first aspect, or the fifth embodiment of the first aspect, or the sixth embodiment of the first aspect, this application also provides an eighth embodiment of the first aspect: the interior of the magnetic dielectric layer includes a gap-filling portion, and the gap-filling portion extends vertically from the surface of the seed unit. This further enhances process stability.

[0022] In practical applications, the material of the gap filling portion can be the same as that of the non-ferromagnetic material portion, and it can be co-deposited with the magnetic unit and the non-ferromagnetic material portion.

[0023] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, or the fourth embodiment of the first aspect, or the fifth embodiment of the first aspect, or the sixth embodiment of the first aspect, or the seventh embodiment of the first aspect, or the eighth embodiment of the first aspect, this application also provides a ninth embodiment of the first aspect: the magnetic recording medium further includes an adhesion layer, which is formed on the surface of the substrate. This allows the seed layer to achieve a chemical adhesion effect with the substrate, effectively increasing the bonding force between the interfaces.

[0024] For example, the material of the adhesive layer can be a metal such as chromium or titanium.

[0025] Based on the first aspect, or the first, second, third, fourth, fifth, sixth, seventh, eighth, or ninth embodiment of the first aspect, this application also provides a tenth embodiment of the first aspect: the magnetic recording medium further includes a heat sink layer formed between the adhesion layer and the seed layer. Thus, based on the arrangement of the heat sink layer, the heat from the magnetic medium layer heated by near-field light during recording can be exchanged to the heat sink layer and quickly carried away, ensuring the thermal stability of the magnetic material through excellent heat dissipation. Simultaneously, it can further control the thermal field distribution within the disk's area, preventing data recording from being damaged due to excessively high local temperatures.

[0026] For example, the material of the heat sink layer can be metallic copper or metallic gold, or a metal alloy.

[0027] Based on the tenth embodiment of the first aspect, this application also provides an eleventh embodiment of the first aspect: the magnetic recording medium further includes a soft magnetic medium layer located between the seed layer and the adhesion layer. The soft magnetic layer enhances the magnetic field loop, reducing the requirements for the writing magnetic field strength. This effectively improves the lifespan of the hard drive and the read / write head, and also effectively reduces the heat generated by frequent write operations, preventing internal temperature rise from affecting the hard drive. In particular, the above-mentioned technical advantages are especially significant in applications involving continuous writing of large amounts of data.

[0028] For example, the soft magnetic dielectric layer material can be an iron alloy, such as, but not limited to, an Al phase FePt alloy.

[0029] In practical applications, the thickness of this soft magnetic dielectric layer can be 10nm to 100nm.

[0030] Based on the eleventh embodiment of the first aspect, this application also provides a twelfth embodiment of the first aspect: the soft magnetic dielectric layer is formed between the seed layer and the heat sink layer, or formed between the heat sink layer and the seed layer, which can achieve the function of enhancing the magnetic field circuit and reducing the functional requirements for the writing magnetic field strength.

[0031] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, or the fourth embodiment of the first aspect, or the fifth embodiment of the first aspect, or the sixth embodiment of the first aspect, or the seventh embodiment of the first aspect, or the eighth embodiment of the first aspect, or the ninth embodiment of the first aspect, or the tenth embodiment of the first aspect, or the eleventh embodiment of the first aspect, or the twelfth embodiment of the first aspect, this application embodiment also provides a thirteenth embodiment of the first aspect: the magnetic recording medium further includes a protective layer and a lubricating layer, which are sequentially stacked on the magnetic medium layer and the non-ferromagnetic material portion. Overall, it can effectively protect the magnetic medium layer, reduce friction between the magnetic head and the disk, and prevent the magnetic head from scratching the disk when contacting the disk.

[0032] A second aspect of this application provides a method for manufacturing a magnetic recording medium. The method includes the following steps: forming a seed layer on a substrate; patterning the seed layer to form a patterned array of seed units; and co-depositing magnetic units and non-ferromagnetic material portions, wherein the magnetic units are formed on the surface of the seed units, and the non-ferromagnetic material portions are formed between various sub-units and between each magnetic unit. In this way, the magnetic islands formed by co-deposition are arranged in an orderly and spaced manner, effectively increasing the disk storage density. Furthermore, the process cost of patterning the seed layer is relatively low, and the co-deposition of the magnetic units and the non-ferromagnetic material portions between the magnetic islands, while meeting the disk storage density requirements, has good processability and can reasonably reduce product realization costs.

[0033] In practical applications, an adhesion layer and a heat sink layer are sequentially formed on the substrate before the seed layer is formed.

[0034] Based on the second aspect, this application also provides a first implementation of the second aspect: the formation of the seed layer includes sequentially forming a first seed layer and a second seed layer, and patterning the second seed layer to form seed units arranged in a patterned array. Based on the configuration of the first seed layer, a relatively thin second seed layer can be configured, which can be formed using a low aspect ratio NIL mask. Compared to the implementation method of forming patterned magnetic islands using NIL technology after the magnetic dielectric layer is fabricated, this application embodiment can effectively improve the lifespan of the mask and reasonably control the processing cost. In other implementation schemes, near-field direct writing can be used to form patterned seed units, which can also achieve patterning at low cost.

[0035] For example, the material of the first seed layer is a chromium alloy, and the material of the second seed layer is platinum.

[0036] Based on the first embodiment of the second aspect, this application also provides a second embodiment of the second aspect: before co-depositing to form magnetic units and non-ferromagnetic material portions, an oxidation treatment is performed to expose a first seed layer between various subunits, forming an oxide portion. This configuration can further improve the co-deposition growth accuracy and increase product yield.

[0037] In practical applications, the manufacturing method also includes the following steps: forming a protective layer and a lubricating layer sequentially on the magnetic unit and the non-ferromagnetic material part.

[0038] A third aspect of this application provides a magnetic storage device, which includes a magnetic recording medium disk, an actuator arm, and a magnetic head. The magnetic head is disposed on the actuator arm, and the magnetic recording medium disk is provided with the magnetic recording medium as described above.

[0039] A fourth aspect of this application provides an electronic device including a housing and a magnetic storage device disposed within the housing, the magnetic storage device being the magnetic storage device described above. Based on the magnetic recording medium provided in this application embodiment, stable and reliable read / write performance can be provided for the electronic device while providing storage capacity.

[0040] For example, the electronic device can be an electronic device with storage devices, such as a server, switch, or data center. Attached Figure Description

[0041] Figure 1 is a schematic diagram of a hard disk drive provided in an embodiment of this application;

[0042] Figure 2 is a schematic diagram of a magnetic recording medium disk provided in an embodiment of this application;

[0043] Figure 3 is a cross-sectional schematic diagram of a magnetic recording medium provided in an embodiment of this application;

[0044] Figure 4 is a flowchart of the manufacturing method of the magnetic recording medium shown in Figure 3;

[0045] Figure 5 is a cross-sectional schematic diagram of another magnetic recording medium provided in an embodiment of this application;

[0046] Figure 6 is a cross-sectional schematic diagram of another magnetic recording medium provided in an embodiment of this application;

[0047] Figure 7 is a flowchart of the manufacturing method of the magnetic recording medium shown in Figure 6;

[0048] Figure 8 is a cross-sectional schematic diagram of another magnetic recording medium provided in an embodiment of this application;

[0049] Figure 9 is a cross-sectional schematic diagram of another magnetic recording medium provided in an embodiment of this application;

[0050] Figure 10 is a cross-sectional schematic diagram of another magnetic recording medium provided in an embodiment of this application;

[0051] Figure 11 is a schematic diagram of an electronic device provided in an embodiment of this application. Detailed Implementation

[0052] This application provides a scheme for realizing a magnetic recording medium based on patterned assisted growth, which can effectively reduce the difficulty of the process and the implementation cost while meeting the requirements of HDD indicators.

[0053] A hard disk drive (HDD) is the primary data storage device for electronic devices. The core performance indicators of an HDD are storage density, stability, and read / write performance. Please refer to Figure 1, which is a schematic diagram of a hard disk drive according to an embodiment of this application. The HDD 100 includes a magnetic recording medium platter 10, an actuator arm 20, a read / write head 30, a control circuit 40, and other accessories. The magnetic recording medium on the platter 10 is used to store data, which can be accessed through the read / write head 30 on the actuator arm 20. The magnetic recording medium determines the storage density of the recording unit and affects stability and read / write performance.

[0054] Perpendicular magnetic recording (PMR), also known as perpendicular writing technology, is a technique used in HDDs where the magnetization direction of the magnetic recording particles is perpendicular to the disk. This allows for the use of magnetic heads that can generate a larger writing magnetic field, and the magnetic recording medium can be fabricated using materials with higher magnetic anisotropy, resulting in relatively high storage density.

[0055] To improve storage density, PMR combined with Heat-Assisted Magnetic Recording (HAMR) technology can be used to assist in magnetic data writing. HAMR uses laser heating of the magnetic medium, making it easier for the magnetic head to magnetize the medium. Employing HAMR technology can effectively improve the high-density information writing capability of the magnetic head under micro-field conditions, achieving a storage density of up to 2 Tb / in. 2 ,

[0056] Furthermore, to achieve the goal of ultra-high density storage, bit-patterned media (BPM) technology has been proposed in related technologies. This technology records information on an ordered, patterned, isolated array of magnetic islands (magnetic recording bits), with each magnetic island storing one bit. Please refer to Figure 2, which is a schematic diagram of a magnetic recording medium disk provided in an embodiment of this application. For example, the magnetic recording medium disk 10 includes magnetic islands D capable of independently recording one bit of information. Based on the highly ordered nature of BPM magnetic recording bits, magnetic interference between adjacent magnetic islands D can be reduced, significantly increasing the disk's storage density. The theoretical storage density can reach 10–100 Tbit / in. 2 .

[0057] A typical patterned media process uses nanoimprint lithography (NIL) to pattern disk blanks. A mask is fabricated using high-resolution lithography tools, and etching is performed to form island-shaped magnetic units. Non-magnetic materials are then filled into the gaps between the islands, followed by chemical polishing to ensure the smoothness of the disk surface. Due to the high aspect ratio of the patterned structure under these conditions, the lifespan of the NIL mask is relatively short, and the process cost cannot be reasonably controlled. Furthermore, residual particles from the polishing process result in excessive height differences on the disk surface, making it difficult to meet the stringent flight altitude requirements of disks (e.g., below 2nm), thus affecting read and write performance.

[0058] Another typical patterning process uses Directed Self-Assembly (DSA) lithography. DSA produces patterns based on block copolymer morphology, utilizing surface interactions and polymer thermodynamics to form island-like magnetic units. This process requires no light source or mask, offering low cost. However, due to limitations in its forming principle, DSA suffers from high linewidth roughness, resulting in lower pattern positioning accuracy and difficulties in magnetic track addressing.

[0059] Based on this, embodiments of this application provide a magnetic recording medium comprising a substrate, a seed layer, and a magnetic media layer. The seed layer is formed on the substrate, and the magnetic media layer is formed on the seed layer. The seed layer includes a patterned array of seed cells, and the magnetic media layer includes a patterned array of magnetic cells. Each magnetic cell corresponds to one of the seed cells to form a magnetic island, and each magnetic island has a non-ferromagnetic material portion co-deposited with the magnetic cells. This arrangement allows the co-deposited magnetic islands to be arranged in an orderly and spaced manner, effectively increasing disk storage density. Furthermore, the patterned seed layer has relatively low manufacturing costs, and the co-deposited magnetic cells and the non-ferromagnetic material portions between the magnetic islands, while meeting disk storage density requirements, exhibit good manufacturability and can reasonably reduce product realization costs.

[0060] To better understand the technical solution and effects of this application, a magnetic magnetic disk is used as the subject of description, and specific embodiments are described in detail below with reference to the accompanying drawings. Please refer to Figure 3, which is a cross-sectional schematic diagram of a magnetic recording medium provided in an embodiment of this application.

[0061] As shown in Figure 3, the magnetic recording medium 101 includes a substrate 21, which can be a glass substrate or, as needed, an aluminum alloy substrate. It has good heat resistance, ensuring stable and reliable read / write performance.

[0062] The seed layer for depositing and forming the magnetic dielectric layer 26 for vertical magnetic recording is stacked on top of the substrate 21. In this embodiment, the seed layer includes a first seed layer 24 and a second seed layer 25. The second seed layer 25 is formed on the first seed layer 24, and patterned periodically arranged seed units 251 are located in the second seed layer 25 to facilitate the deposition and growth of magnetic units.

[0063] The first seed layer 24 can be made of a chromium (Cr) alloy, such as, but not limited to, chromium-ruthenium (CrRu). In a specific implementation, the thickness of the first seed layer 24 can be 10 nm to 100 nm. The second seed layer 25 can be made of platinum (Pt) or ruthenium (Ru). Based on the configuration of the first seed layer 24, a relatively thin second seed layer 25 can be configured. In a specific implementation, the thickness of the second seed layer 25 can be 2 nm to 10 nm. Correspondingly, the patterned seed units 251 can be formed using a low aspect ratio NIL mask. Referring to Figure 2, the shapes of various sub-units 251 can be circular as shown in the figure, or they can be hexagonal, elliptical, or rectangular, etc. The embodiments of this application are not limited.

[0064] Compared to the method of forming patterned magnetic islands using NIL technology after the magnetic dielectric layer is fabricated, the embodiments of this application can effectively improve the lifespan of the mask and reasonably control the processing cost. In other implementation schemes, patterned seed units 251 can be formed using near-field direct writing, which can also achieve patterning at low cost.

[0065] Meanwhile, based on the setting of two seed layers, thinner and flatter patterned seed units 251 can be obtained, and the lattice orientation of various sub-units 251 can be optimized, which can ensure that each magnetic unit of the magnetic dielectric layer 26 has good perpendicular magnetocrystalline anisotropy.

[0066] In this embodiment, the magnetic dielectric layer 26 is formed on a patterned second seed layer 25. The patterned magnetic units 261 of the magnetic dielectric layer 26 are arranged one-to-one with the seed units 251 of the second seed layer 25, constructing a patterned and isolated array of magnetic islands D. In a specific implementation, each magnetic island D can record 1 bit of information. Simultaneously, a non-ferromagnetic material portion 29 is formed in the recesses between each magnetic island D. Here, the non-ferromagnetic material portion 29 is co-deposited with the magnetic units 261 of the magnetic dielectric layer 26, and the size and shape of the magnetic units 261 tend to be consistent with the size and shape of the seed units 251. That is, the various sub-units 251 and the magnetic units 261 are separated by non-ferromagnetic material to avoid performing read or write operations.

[0067] In specific implementations, the magnetic dielectric layer 26 can be made of an iron-platinum (FePt) alloy, with a thickness ranging from 5 nm to 20 nm. The non-ferromagnetic material portion 29 can be made of non-metallic materials such as carbon materials or oxides, including, but not limited to, silicon dioxide (SiO2). In other implementations, the non-ferromagnetic material portion 29 can also be formed using a material that does not exhibit significant residual magnetism when no magnetic field is applied, as long as it does not adversely affect reading or writing. This application does not limit the scope of the embodiments.

[0068] To ensure product yield, an oxide portion 241 can be formed on the surface of the first seed layer 24 below the non-ferromagnetic material portion 29. In other words, the oxide portion 241 is formed on the surface of the first seed layer 24 between the various sub-units 251, directly growing a low-roughness disk surface and effectively alleviating the flight altitude stability problem. Compared to the molding method using thicker oxide filling and chemical polishing in related technologies, this embodiment uses a co-deposition process to form the non-ferromagnetic material portion 29 and the magnetic unit 261, further improving product yield while meeting product functional requirements. Using the magnetic recording medium provided by this application, a storage density of 2Tbit / in can be achieved. 2 ~50Tbit / in 2 .

[0069] In a specific implementation, the thickness of the oxide portion 241 can be 1 nm to 5 nm. Specifically, the oxide portion 241 can be formed by oxidation treatment using air or ozone. Taking the first seed layer 24 made of CrRu as an example, the composition of the oxide portion 241 is CrRuxOy oxide.

[0070] In addition, to improve the bonding strength of the substrate 21, an adhesion layer 22 film can be formed on the surface of the substrate 21 before forming the seed layer. The material of the adhesion layer 22 can be a metal material such as Cr or Ti. Through the metallization structure with high bonding strength, the bonding between the seed layer (metal layer) and the substrate 21 achieves a chemical adhesion effect, effectively increasing the bonding force between the interfaces. In a specific implementation, the thickness of the adhesion layer 22 can be 1 nm to 10 nm.

[0071] Furthermore, to achieve good heat dissipation, a heat sink layer 23 can be disposed between the adhesion layer 22 and the seed layer. The heat sink layer 23 can be made of a metal with high thermal conductivity, such as copper (Cu) or gold (Au), or other metal alloys. Based on the arrangement of the heat sink layer 23, the heat from the magnetic medium layer heated by near-field light during recording can be exchanged to the heat sink layer 23 and quickly dissipated, ensuring the thermal stability of the magnetic material through excellent heat dissipation. Simultaneously, based on this arrangement of the heat sink layer 23, the thermal field distribution within the disk's surface area can be controlled, preventing data recording from being damaged due to excessively high local temperatures. In specific implementations, the thickness of the heat sink layer 23 can be 10 nm to 200 nm.

[0072] Optionally, a protective layer 27 and a lubricating layer 28 may be sequentially laminated on the magnetic dielectric layer 26 and the non-ferromagnetic material portion 29. The protective layer 27 may be made of C material, such as graphite or diamond, and its thickness may be 1 nm to 5 nm. The lubricating layer 28 may be made of a heat-resistant, carbonophilic, and hydrophobic material, such as, but not limited to, fluorinated polymers like perfluoropolyethers (PFPE), to reduce friction between the magnetic head and the disk and prevent the magnetic head from scratching the disk when it contacts it. The thickness of the lubricating layer 28 may be 1 nm to 3 nm; the specific material selection can be determined according to the overall product design requirements, and is not limited in this embodiment.

[0073] The manufacturing method of the magnetic recording medium described in Figure 3 will be briefly explained below with reference to Figure 4.

[0074] In step S401, as shown in Figure 4(a), the adhesion layer 22, the heat sink layer 23, the first seed layer 24, and the second seed layer 25 are sequentially deposited on the substrate 21.

[0075] The first seed layer 24 is made of CrRu, and the second seed layer 25 is made of Pt. Specifically, the above layers can be deposited sequentially on the glass substrate 201 using a vacuum deposition process, such as, but not limited to, magnetron sputtering, laser-assisted deposition, or atomic layer deposition.

[0076] Step S402, patterning of the seed layer. As shown in Figure 4(b), the second seed layer 25 is patterned into seed units 251 for depositing and growing magnetic units 261 of the magnetic medium layer 26. The thickness of the seed units 251 is 2 nm to 10 nm.

[0077] In practical implementation, the second seed layer 25, which serves as the patterning object, is relatively thin and can be formed using a low aspect ratio NIL mask. Specifically, the patterning process based on NIL technology can be determined according to the overall product design requirements, which will not be elaborated here. Of course, the patterned seed unit 251 can also be formed using near-field direct writing, which can also achieve patterning at low cost and precisely control the deposition of the seed unit.

[0078] After the seed layer is patterned, part of the first seed layer 24 will be exposed between various sub-units 251. The exposed surface of the first seed layer 24 can be oxidized to form an oxide part 241, which is composed of oxides such as CrRuxOy.

[0079] In practice, oxidation can be performed using air or ozone. It is understood that, given the strong oxidation resistance of the second seed layer Pt, the oxide layer 241 will not be oxidized during its formation, thus meeting the process requirements for the stable deposition of the magnetic unit 261.

[0080] In step S403, magnetic unit 261 and nonferromagnetic material portion 29 are co-deposited. Specifically, the magnetic dielectric material FePt alloy and the material SiO2 of the nonferromagnetic material portion 29 are co-deposited on the disk surface.

[0081] In practical implementation, based on segregation, shadowing effect, and grain nucleation principles, FePt alloy is deposited on the surface of seed unit 251 to form magnetic unit 261, and SiO2 is deposited on the surface of oxide part 241 to form non-ferromagnetic material part 29, constructing a patterned and isolated magnetic island D array. Specifically, when FePt is deposited on the Pt layer at a certain temperature, L10 phase FePt alloy can be vertically grown to form with a lattice orientation of 001, exhibiting better anisotropy.

[0082] In step S404, a protective layer 27 and a lubricating layer 28 are formed. In a specific implementation, the protective layer 27 can be formed using a vacuum deposition method, such as, but not limited to, magnetron sputtering, laser-assisted deposition, or atomic layer deposition. However, the lubricating layer 28 is formed on top of the protective layer 27, for example, but not limited to, spin coating to form a perfluoropolyether lubricating layer 28.

[0083] In practice, the materials and processes for the protective layer 27 and the lubricating layer 28 can be determined based on the overall product design requirements.

[0084] It should be noted that steps S401 to S404 above describe the main manufacturing process of the magnetic recording medium. Each step may include multiple processes, which can be determined according to the actual manufacturing process. This application does not limit the scope of the embodiments.

[0085] Please refer to Figure 5, which is a cross-sectional schematic diagram of another magnetic recording medium provided in an embodiment of this application. To clearly illustrate the differences and connections between this embodiment and the scheme described in Figure 3, the same functional components and structures are shown with the same markings in the figure.

[0086] Compared to the embodiment described in FIG3, the difference in this embodiment is that the magnetic dielectric layer 26 of the magnetic recording medium 101 further includes a gap filling portion 2611 to enhance process stability. As shown in FIG5, the gap filling portion 2611 extends vertically from the surface of the seed unit 251 and can be co-deposited with the magnetic unit 261 and the non-ferromagnetic material portion 29.

[0087] The material of the gap-filling portion 2611 can be the same as the material of the non-ferromagnetic material portion 29. For example, but not limited to, oxides such as SiO2. Accordingly, the protective layer 27 and the lubricating layer 28 are sequentially stacked on the magnetic unit 261 having the gap-filling portion 2611 and the non-ferromagnetic material portion 29.

[0088] Other functional components and structures can be the same as those described in Figure 3. They will not be repeated here.

[0089] In the embodiments described in Figures 3 and 5 above, the magnetic medium layer 26 of the magnetic island D is an FePt alloy. In specific implementations, the magnetic medium layer of the magnetic island D can also be formed by a combination of hard and soft magnetic materials. Please refer to Figure 6, which is a cross-sectional schematic diagram of another magnetic recording medium provided in this application embodiment. To clearly illustrate the differences and connections between this embodiment and the aforementioned solutions, the same functional components and structures are indicated by the same markings in the figure.

[0090] Compared to the embodiment described in FIG3, the difference in this embodiment is that the magnetic dielectric layer 26 includes a first magnetic dielectric layer 26a and a second magnetic dielectric layer 26b. The first magnetic dielectric layer 26a is formed on the second seed layer 25, and the second magnetic dielectric layer 26b is formed on the first magnetic dielectric layer 26a. The first magnetic dielectric layer 26a includes patterned first magnetic units 261a, and the second magnetic dielectric layer 26b includes patterned second magnetic units 261b. The first magnetic units 261a and the second magnetic units 261a are arranged in a one-to-one correspondence to form magnetic units, and are also arranged in a one-to-one correspondence with the seed units 251 of the second seed layer 25, thus constructing a patterned and isolated array of magnetic islands D. Similarly, the non-ferromagnetic material portion 29 between each magnetic island is co-deposited with the first magnetic units 261a and the second magnetic units 261b, and the size and shape of the first magnetic units 261a and the second magnetic units 261b tend to be consistent with the size and shape of the seed units 251.

[0091] The first magnetic dielectric layer 26a can be made of a hard magnetic material that can stably maintain its magnetization state, such as, but not limited to, an L10 phase FePt alloy, with a thickness of 5 nm to 20 nm. The second magnetic dielectric layer 26b can be made of a soft magnetic material with low coercivity, such as an Al phase FePt alloy, or other Fe alloys, with a thickness of 1 nm to 10 nm. This combination of hard and soft magnetic materials reduces the coercivity of the magnetic dielectric while maintaining a certain degree of anisotropy, and reduces the switching field of the hard magnetic layer while maintaining necessary thermal stability, thereby reducing the energy requirements for data writing and effectively improving the signal-to-noise ratio. Simultaneously, it facilitates fast writing operations, thereby simplifying the head-side setup and reasonably controlling the overall implementation cost of the hard drive.

[0092] In other specific implementations, the first magnetic media layer 26a and the second magnetic media layer 26b of the magnetic recording medium 101 may also include gap-filling portions (not shown in the figure) extending vertically from the surface of the seed unit 251, to enhance process stability. The specific implementation can be determined according to the overall product design requirements, and this application embodiment does not limit the scope.

[0093] The manufacturing method of the magnetic recording medium described in Figure 6 will be briefly explained below with reference to Figure 7.

[0094] In step S701, the adhesion layer 22, the heat sink layer 23, the first seed layer 24, and the second seed layer 25 are sequentially deposited on the substrate 21.

[0095] Step S702: Pattern the seed layer.

[0096] Steps S701 to S702 above can be the same as steps S401 to S402 described in the foregoing embodiments.

[0097] In step S703, a first magnetic unit 261a and a bottom non-ferromagnetic material portion 29' are co-deposited. Here, the bottom non-ferromagnetic material portion 29' is located between each first magnetic unit 261a and various sub-units 251.

[0098] In a specific implementation, based on segregation, shadowing effect and grain nucleation principle, FePt alloy is deposited on the surface of seed unit 251 to form first magnetic unit 261a. The material of the first magnetic medium layer 26a is vertically grown L10 phase FePt alloy. At the same time, SiO2 is deposited on the surface of oxide part 241 to form bottom non-ferromagnetic material part 29'.

[0099] The above step S703 can also be the same as step S403 described in the foregoing embodiments.

[0100] In step S704, a second magnetic unit 261b and a top non-ferromagnetic material section are co-deposited. Here, the top non-ferromagnetic material section is located between each of the second magnetic units 261b, and the top non-ferromagnetic material section and the bottom non-ferromagnetic material section constitute the non-ferromagnetic material section 29 between the magnetic islands D.

[0101] In the specific implementation, based on segregation, shadowing effect and grain nucleation principle, Al phase FePt is deposited on the surface of the first magnetic unit 261a to form the second magnetic unit 261b, and SiO2 is deposited on the surface of the top non-ferromagnetic material part to form the top non-ferromagnetic material part, thus constructing a patterned and isolated magnetic island D array.

[0102] Step S705: Forming the protective layer 27 and the lubricating layer 28.

[0103] Step S705 above can also be the same as step S404 described in the foregoing embodiments. This application does not limit the scope of the embodiments.

[0104] To reasonably control the required magnetic field strength for writing, a soft magnetic dielectric layer can be placed between the seed layer and the adhesion layer. Please refer to Figure 8, which is a cross-sectional schematic diagram of another magnetic recording medium provided in an embodiment of this application. To clearly illustrate the differences and connections between this embodiment and the scheme described in Figure 3, components and structures with the same functions are indicated by the same reference numerals in the figure.

[0105] Compared to the embodiment described in Figure 3, the difference in this embodiment is that the magnetic recording medium 101 further includes a soft magnetic medium layer 210, which is formed between the first seed layer 24 (seed layer) and the heat sink layer 23. The soft magnetic layer enhances the magnetic field loop, thereby reducing the requirements for the writing magnetic field strength. This effectively improves the lifespan of the hard drive and read / write head, and also effectively reduces the heat generated by frequent write operations, preventing internal temperature rise from affecting the hard drive. In particular, the above-mentioned technical advantages are especially significant in applications involving continuous writing of large amounts of data.

[0106] In specific implementations, the material of the soft magnetic dielectric layer 210 can be an Fe alloy, such as an Al phase FePt alloy, or other Fe alloys, and the thickness can be 10 nm to 100 nm. The specific thickness can be determined according to the overall product design requirements, and this application embodiment does not impose such limitations.

[0107] Other functional components and structures can be the same as those described in Figure 3. They will not be repeated here.

[0108] In the embodiment described in Figure 8, the soft magnetic dielectric layer is formed between the seed layer and the heat sink layer. In other specific implementations, the soft magnetic dielectric layer located between the seed layer and the adhesion layer may also be formed between the heat sink layer and the adhesion layer. Please refer to Figure 9, which is a cross-sectional schematic diagram of another magnetic recording medium provided in an embodiment of this application. To clearly illustrate the differences and connections between this embodiment and the scheme described in Figure 8, the same functional components and structures are indicated by the same reference numerals in the figure.

[0109] Compared to the embodiment described in Figure 8, the difference in this embodiment is that the soft magnetic dielectric layer 210 of the magnetic recording medium 101 is formed between the heat sink layer 23 and the adhesion layer 22. This soft magnetic layer arrangement also enhances the magnetic field loop and reduces the requirement for the writing magnetic field strength.

[0110] Other functional components and structures can be the same as those described in Figure 8. They will not be repeated here.

[0111] Furthermore, in other specific implementations, the magnetic recording medium 101 described in Figures 8 and 9 may also include a gap-filling portion (not shown in the figures) extending vertically from the surface of the seed unit 251 within its magnetic medium layer 26, to enhance process stability. The specific implementation can be determined based on the overall product design requirements, and is not limited in the embodiments of this application.

[0112] The magnetic recording media described in the foregoing embodiments all include two seed layers. In specific implementations, the seed layer can also be set to one layer. Please refer to Figure 10, which is a cross-sectional schematic diagram of another magnetic recording medium provided in an embodiment of this application. In order to clearly illustrate the differences and connections between this embodiment and the foregoing embodiments, the same functional components and structures are shown with the same markings in the figure.

[0113] As shown in Figure 10, the magnetic recording medium 101 includes a seed layer 211, which includes a patterned array of seed units 2111. A magnetic medium layer 26 is formed on the patterned seed layer 211, and the patterned magnetic units 261 of the magnetic medium layer 26 are arranged one-to-one with the seed units 2111 of the seed layer 211, thus constructing a patterned and isolated magnetic island D array.

[0114] In specific implementations, the seed layer 211 can be made of metals such as Pt, Ru, magnesium oxide (MgO), or titanium nitride (TiN), and its thickness can be 10 nm to 20 nm. The specific thickness can be determined based on the overall product design requirements, and this application does not impose such limitations.

[0115] It should be understood that the aforementioned magnetic recording media can be used in data storage scenarios in data centers, and can also be used as magnetic storage devices in other application scenarios. The other functional components of a hard drive used as a magnetic storage device can be implemented using existing technologies, and therefore will not be elaborated further.

[0116] In addition to the magnetic recording medium described in the foregoing embodiments, this application also provides an electronic device. Please refer to FIG11, which is a schematic diagram of an electronic device provided in this application embodiment. The electronic device 1000 includes a housing 200 and a hard disk 100 disposed within the housing 200. The hard disk 100 includes the magnetic recording medium described in FIGS. 3, 5, 6, 8, and 9. Based on the magnetic recording medium provided in this application embodiment, stable and reliable read / write performance can be provided for the electronic device while providing storage capacity.

[0117] The electronic device 1000 can be various electronic devices, such as, but not limited to, servers, switches and data centers with hard drives, as well as consumer electronics such as computers, mobile phones, portable high-capacity voice and video players, game consoles, PDAs, digital cameras, and in-vehicle digital products.

[0118] It should be understood that other functional components of this electronic device can be implemented using existing technologies. Therefore, they will not be elaborated upon here.

[0119] The above are merely preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A magnetic recording medium, characterized in that, The magnetic recording medium includes a substrate, a seed layer, and a magnetic medium layer. The seed layer is formed on the substrate, and the magnetic medium layer is formed on the seed layer. The seed layer includes seed units arranged in a patterned array, and the magnetic medium layer includes magnetic units arranged in a patterned array. The magnetic units and the seed units correspond one-to-one to form magnetic islands, and each magnetic island has a non-ferromagnetic material portion co-deposited with the magnetic units.

2. The magnetic recording medium according to claim 1, characterized in that, The magnetic medium layer is a single layer, and the material of the magnetic medium layer is an iron-platinum alloy.

3. The magnetic recording medium according to claim 2, characterized in that, The thickness of the magnetic medium layer is 5nm to 20nm.

4. The magnetic recording medium according to claim 1, characterized in that, The magnetic medium layer includes a first magnetic medium layer and a second magnetic medium layer. The first magnetic medium layer is made of a hard magnetic material, and the second magnetic medium layer is made of a soft magnetic material. The first magnetic medium layer is formed on the seed layer, and the second magnetic medium layer is formed on the first magnetic medium layer. The first magnetic medium layer includes a patterned array of first magnetic units, and the second magnetic medium layer includes a patterned array of second magnetic units. The first magnetic units and the second magnetic units are arranged in a one-to-one correspondence to form the magnetic units.

5. The magnetic recording medium according to claim 4, characterized in that, The first magnetic dielectric layer is made of an iron-platinum alloy, and the second magnetic dielectric layer is made of an Fe alloy.

6. The magnetic recording medium according to claim 5, characterized in that, The first magnetic dielectric layer is made of L10 phase iron-platinum alloy, and the second magnetic dielectric layer is made of Al phase iron-platinum alloy.

7. The magnetic recording medium according to any one of claims 4 to 6, characterized in that, The thickness of the first magnetic medium layer is 5nm to 20nm, and the thickness of the second magnetic medium layer is 1nm to 10nm.

8. The magnetic recording medium according to any one of claims 1 to 7, characterized in that, The material of the non-ferromagnetic material section is an oxide.

9. The magnetic recording medium according to claim 8, characterized in that, The material of the non-ferromagnetic material section is silicon dioxide.

10. The magnetic recording medium according to any one of claims 1 to 9, characterized in that, The seed layer includes a first seed layer and a second seed layer, the second seed layer being formed on the first seed layer, the second seed layer including the seed unit, and the magnetic medium layer being formed on the second seed layer.

11. The magnetic recording medium according to claim 10, characterized in that, The first seed layer is made of chromium alloy, and the second seed layer is made of platinum or ruthenium.

12. The magnetic recording medium according to claim 11, characterized in that, The first seed layer is made of chromium-ruthenium alloy, and the thickness of the first seed layer is 10nm to 100nm. The thickness of the second seed layer is 2nm to 10nm.

13. The magnetic recording medium according to any one of claims 10 to 12, characterized in that, An oxide portion is formed on the surface of the first seed layer below the non-ferromagnetic material portion.

14. The magnetic recording medium according to claim 13, characterized in that, The thickness of the oxide portion is 1 nm to 5 nm.

15. The magnetic recording medium according to any one of claims 1 to 9, characterized in that, The seed layer is a single layer, and the material of the seed layer is platinum, ruthenium, magnesium oxide or titanium nitride, with a thickness of 10 nm to 20 nm.

16. The magnetic recording medium according to any one of claims 1 to 15, characterized in that, The interior of the magnetic medium layer includes a gap-filling portion, and the gap-filling portion extends vertically from the surface of the seed unit.

17. The magnetic recording medium according to claim 16, characterized in that, The material of the gap filling portion is the same as the material of the non-ferromagnetic material portion.

18. The magnetic recording medium according to any one of claims 1 to 17, characterized in that, The magnetic recording medium further includes an adhesion layer formed on the surface of the substrate.

19. The magnetic recording medium according to claim 18, characterized in that, The material of the adhesive layer is metallic chromium or metallic titanium.

20. The magnetic recording medium according to claim 18 or 19, characterized in that, The magnetic recording medium further includes a heat sink layer formed between the adhesion layer and the seed layer.

21. The magnetic recording medium according to claim 20, characterized in that, The heat sink layer is made of metallic copper, metallic gold, or a metallic alloy.

22. The magnetic recording medium according to claim 20 or 21, characterized in that, The magnetic recording medium further includes a soft magnetic medium layer located between the seed layer and the adhesion layer.

23. The magnetic recording medium according to claim 22, characterized in that, The soft magnetic dielectric layer material is an iron alloy.

24. The magnetic recording medium according to claim 23, characterized in that, The material of the soft magnetic dielectric layer is an Al phase FePt alloy.

25. The magnetic recording medium according to any one of claims 22 to 24, characterized in that, The thickness of the soft magnetic dielectric layer is 10 nm to 100 nm.

26. The magnetic recording medium according to any one of claims 22 to 25, characterized in that, The soft magnetic dielectric layer is formed between the seed layer and the heat sink layer, or between the heat sink layer and the seed layer.

27. The magnetic recording medium according to any one of claims 1 to 26, characterized in that, The magnetic recording medium further includes a protective layer and a lubricating layer, which are sequentially stacked on the magnetic medium layer and the non-ferromagnetic material portion.

28. A method for manufacturing a magnetic recording medium, characterized in that, The manufacturing method includes the following steps: A seed layer is formed on the substrate; The seed layer is patterned to form a patterned array of seed units. Magnetic units and nonferromagnetic material portions are co-deposited, wherein the magnetic units are formed on the surface of the seed units, and the nonferromagnetic material portions are formed between the seed units and between the magnetic units.

29. The method for manufacturing a magnetic recording medium according to claim 28, characterized in that, Before the seed layer is formed, an adhesion layer and a heat sink layer are sequentially formed on the substrate.

30. The method for manufacturing a magnetic recording medium according to claim 28 or 29, characterized in that, The formation of the seed layer includes sequentially forming a first seed layer and a second seed layer, and patterning the second seed layer to form seed units arranged in a patterned array.

31. The method for manufacturing a magnetic recording medium according to claim 30, characterized in that, The first seed layer is made of chromium alloy, and the second seed layer is made of platinum.

32. The method for manufacturing a magnetic recording medium according to claim 30 or 31, characterized in that, Before the co-deposition forms the magnetic units and non-ferromagnetic material portions, an oxidation process is performed to expose the first seed layer between each of the seed units, forming the oxide portion.

33. The method for manufacturing a magnetic recording medium according to any one of claims 28 to 32, characterized in that, The manufacturing method further includes the following steps: A protective layer and a lubricating layer are sequentially formed on the magnetic unit and the non-ferromagnetic material portion.

34. A magnetic storage device, characterized in that, The magnetic storage device includes a magnetic recording medium disk, an actuator arm, and a magnetic head, wherein the magnetic head is disposed on the actuator arm, and the magnetic recording medium is disposed on the magnetic recording medium disk according to any one of claims 1 to 27.

35. An electronic device, characterized in that, The electronic device includes a housing and a magnetic storage device disposed within the housing, wherein the magnetic storage device is the magnetic storage device as described in claim 34.

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