Opto-electronic device comprising an undercut structure

Abstract

A multi-layered opto-electronic device extending in at least one lateral aspect comprises at least one emissive region comprising first and second electrodes, and at least one emissive region semiconducting layer therebetween, the first electrode between a substrate and the emissive region semiconducting layer; and at least one undercut partition, disposed laterally thereto, providing a longitudinal discontinuity, comprising a lower section whose sidewall is recessed relative to an upper section to define a sheltered region thereunder, at least one partition semiconducting layer and a conductive coating respectively disposed on the upper section; wherein at least one of the: sheltered region's lateral aspect, and longitudinal discontinuity, imposes a discontinuity between the second electrode and / or emissive region semiconducting layer, of an emissive region; with a corresponding one of the second electrode and / or emissive region semiconducting layer, of another emissive region, an auxiliary electrode, the conductive coating, and the partition semiconducting layer.

Description

OPTO-ELECTRONIC DEVICE COMPRISING AN UNDERCUT STRUCTURE REEATED APPEICATIONS

[0001] The present application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 711,031 filed October 23, 2024, the contents of which are incorporated herein by reference in their entirety.TECHNICAL FIEED

[0002] The present disclosure relates to layered opto-electronic devices having a plurality of (sub-) pixel emissive regions, each (sub-) pixel comprising first and second electrodes separated by at least one semiconductor layer, in which at least one of: the electrodes, a conductive coating electrically coupled therewith, and transmissive regions therebetween, may be patterned by depositing a patterning coating that may at least one of: act, and be, a nucleation inhibiting coating for patterning at least one conductive deposited material such as may be deposited during a device fabrication process, to form such an electrode, and conductive coating, and to preclude deposition of such deposited material to form such transmissive region(s), including without limitation by dispensing with the use of fine metal masks (FMM) in depositing one of the first and second electrode layer, including without limitation, to increase an aperture ratio corresponding to such emissive regions beyond the limitations of such FMMs.BACKGROUND

[0003] In an opto-electronic device such as an organic light emitting diode (OLED), at least one semiconducting layer, comprising an emissive layer, may be disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode may be electrically coupled with a power source, and respectively generate holes and electrons that migrate toward each other through the at least one semiconducting layer. When a pair of holes and electrons combine, light, in the form of a photon, may be emitted by the emissive layer.

[0004] OLED display panels, such as an active-matrix OLED (AMOLED) panel, may comprise a plurality of pixels, each pixel further comprising a plurality of (including without limitation, one of: three, and four) sub-pixels. In some non-limiting examples, the various sub-pixels of a pixel may be characterized by a plurality of different colors, including without limitation, R(ed), G(reen), B(lue), and W(hite). Each (sub-) pixel may have an associated emissive region, comprising a stack of: an associated pair of electrodes, and at least one semiconducting layer between them. In some non-limiting examples, each sub-pixel of a pixel may emit light, including without limitation, photons, that have an associated wavelength spectrum characterized by a given color, including without limitation, one of, R(ed), G(reen), B(lue), and W(hite). In some non-limiting examples, the (sub-) pixels may be selectively driven by a driving circuit 100 comprising at least one thin-film transistor (TFT) structure electrically coupled with conductive metal lines, in some non-limiting examples, within a substrate upon which the electrodes and the at least one semiconducting layer are deposited. Various coatings (layers) of such panels may, in some non-limiting examples, be formed by vacuum-based deposition processes.

[0005] In AMOLED panels, light may be emitted by a (sub-) pixel when a voltage is applied across an anode and a cathode thereof. By controlling the voltage applied across the anode and the cathode, it may be possible to control the emission of light from each (sub-) pixel of such panel. In cases where a common cathode is provided across multiple (sub-) pixels, the voltage across the anode and the cathode in each (sub-) pixel may be controlled by modulating the voltage of the anode. In some non-limiting examples, the adjacent anodes may be spaced apart in a lateral aspect, and at least one non-emissive region may be provided therebetween.

[0006] In some non-limiting examples, such panels may be configured using PMOS driver (P-type) thin film transistor (TFT) technology, including without limitation, low temperature polysilicon (LTPS).

[0007] In some non-limiting examples, a P-type TFT panel may be configured in a sourcefollower driving circuit 100a, as shown in FIG. 1A, by having a drain D of a driver TFT 110 coupled with a terminal 120 of a power source 304 (FIG. 3), so that a source S of the driver TFT 110, which is coupled with the cathode(s) 130 of the (sub-) pixel emissive region(s) of an OLED 140 (anode(s) 150 thereof being coupled with a negative terminal 160, including without limitation, ground, of the power source 304), senses an input at a gate G of the driver TFT 110 and drives a load at the source S thereof, following the gate voltage VGS.

[0008] In some non-limiting examples, the P-type TFT panel may be configured in a constant current driving circuit 100b, as shown in FIG. IB, by having the drain D of the driver TFT 110 coupled with, and drive, anode(s) 150 of the (sub-) pixel emissive region(s) of the OLED 140, with the cathode(s) 130 corresponding thereto coupled with the negative terminal 160, including without limitation, ground, of the power source 304. In some non-limiting examples, such a constant current circuit may provide each emissive region with common cathodes 130 and independent anodes 150 and may be used in top-emission OLED panels, including without limitation, in products of substantially small size, including without limitation, mobile devices and tablets.

[0009] In some non-limiting examples, such panels may also be configured using NMOS driver (N-type) TFT technology, including without limitation, oxide TFTs.

[0010] In some non-limiting examples, an N-type TFT panel may be configured in a sourcefollower driving circuit 100c, as shown in FIG. 1C, by having the drain D of the driver TFT 110 coupled with the terminal 120 of the power source 304, so that the source S of the driver TFT 110, which is coupled with the anode(s) 150 of the (sub-) pixel emissive region(s) of the OLED 140 (the cathode(s) 130 thereof being coupled with the negative terminal 160, including without limitation, ground, of the power source 304), senses the input at the gate G of the driver TFT 110 and drives the load at the source S thereof, following the gate voltage VGS.

[0011] In some non-limiting examples, the N-type TFT panel may be configured in a constant current driving circuit 100a, as shown in FIG. ID, by having the drain D of the driver TFT 110 coupled with, and drive, cathode(s) 130 of the (sub-) pixel emissive region(s) of the OLED 140, with the anode(s) 150 corresponding thereto coupled with the negative terminal, including without limitation, ground, of the power source. In some non-limiting examples, such a constant current circuit may provide each emissive region with common anodes 150 and independent cathodes 130.

[0012] In each of FIGs. 1A-1D, the gate G of the driver TFT 110 may be coupled with a drain D of a switching TFT 170, whose gate G is coupled with a scan line 175, and whose source S is coupled with a signal line 177.

[0013] In Chinese Patent Application No. 117769329, entitled Display panel, preparation method thereof and display device, filed 1 December 2023 by Kunshan Govisionox Optoelectronics Co. Ltd., and Hefei Visionox Technology Co. Ltd., and published 26 March 2024, there is disclosed, in the technical field of display, a display panel, a preparation method thereof and a display device, wherein the display panel comprises a display area, a hole area and a transition area positioned between the display area and the hole area, and the display area at least partially surrounds the hole area; the display panel positioned in the transition area comprises; a substrate; the inorganic layer positioned on one side of the substrate comprises isolation columns and grooves positioned in the transition region; the first barrier part of the first electrode layer is positioned at one side of the isolation column far away from the substrate; the second electrode layer comprises a first electrode part and a second electrode part which are arranged at intervals, and the first electrode part and the second electrode part are separated by a separation column and a first separation part; the first electrode part is positioned at one side of the first blocking part far away from the substrate, and the second electrode part is positioned in the groove; the packaging layer is located one side of the second electrode layer away from the substrate, the second electrode layer does not have the risk of being mutually lapped and conducted with metal, water and oxygen in the hole area can be blocked, the display device is prevented from being corroded, and the display effect is guaranteed.

[0014] In Chinese Patent Application No. 117460296, entitled Display panel, preparation method thereof and display device, filed 30 October 2023 by Kunshan Govisionox Optoelectronics Co. Ltd., and Hefei Visionox Technology Co. Ltd., and published 26 January 2024, there is disclosed a display panel, a preparation method thereof and display equipment. The display panel includes a display region, a hole region, and an isolation region between the display region and the hole region, the display panel further including: a substrate, an insulating layer laminated on one surface of the substrate; the isolation column is positioned in the isolation region and comprises an inorganic pad high layer, a first planarization layer and a second planarization layer which are sequentially stacked on the insulating layer along the direction away from the substrate; orthographic projections of the first planarization layer and the second planarization layer on the insulating layer fall in orthographic projections of theinorganic pad layer on the insulating layer; the functional film layer extends from the display area to the isolation area, and the functional film layer extending to the isolation area is disconnected at the position of the isolation column. The display panel effectively avoids the problem of poor display of the display panel caused by the fact that the hole area is invalid due to the electrochemical effect caused by the charge when the product is subjected to ESD and reliability test, and water vapor and oxygen enter the display area of the display panel.

[0015] In Chinese Patent Application No. 117396020, entitled Display panel and display device, filed 19 October 2023 by Yungu Guan Technology Co. Ltd., and Hefei Visionox Technology Co. Ltd., and published 12 January 2024, there is disclosed, in the technical field of display, a display panel and a display device, wherein the display panel comprises: the pixel limiting layer is arranged on one side of the array substrate, the pixel limiting layer comprises a pixel opening formed by surrounding a pixel limiting part and a pixel limiting part, a first electrode is exposed from the pixel opening, and at least one groove is formed in the side wall, facing the pixel opening, of at least part of the pixel limiting part; the first common layer is positioned on one side of the first electrode, which is away from the array substrate, and extends to one side of the pixel limiting part, which is away from the array substrate, and the first common layer is disconnected at the groove. According to the display panel, the grooves of the pixel limiting layers enable the first common layers at the bottoms of at least part of adjacent pixel openings to be disconnected, so that current is prevented from being transversely conducted from one sub-pixel to the adjacent sub-pixel, the effect of reducing lateral electric leakage is achieved, and the phenomenon of low-order color mixing or color impurity is improved.

[0016] In Chinese Patent No. 117062489, entitled Display panel and display device, filed 12 October 2023 by Kunshan Govisionox Optoelectronics Co. Ltd., and Hefei Visionox Technology Co. Ltd., and granted 30 January 2024, there is disclosed a display panel and a display device. The display panel comprises a substrate, an isolation structure positioned on the substrate, a plurality of light emitting units and a touch electrode layer. The isolation structure encloses and closes and form isolation opening and printing opacity opening, and isolation opening is used for holding the light emitting unit, and isolation opening and printing opacity opening interval set up. The touch electrode layer is located one side of the isolationstructure, which is away from the substrate, the touch electrode layer comprises touch electrode blocks, adjacent touch electrode blocks are sequentially connected to forma grid pattern with meshes, and orthographic projections of the isolation opening and the light-transmitting opening on the substrate are overlapped with orthographic projections of the meshes in the grid pattern on the substrate at least partially. The structure can improve the light transmittance of the area of the display panel where the light transmitting opening is arranged.

[0017] In Chinese Patent Application No. 117042541, entitled Display panel and display device, filed 25 August 2023 by Kunshan Go visionox Optoelectronics Co. Ltd., and Hefei Visionox Technology Co. Ltd., and published 10 November 2023, there is disclosed a display panel and a display device, wherein the display panel comprises an open pore area and a partition area, the partition area is arranged around at least part of the periphery of the open pore area, and the display panel comprises an array substrate, a protective layer and a packaging layer; the array substrate comprises a substrate and an insulating layer, the insulating layer is arranged on one side of the substrate, the array substrate is provided with a groove arranged in the partition area, and the groove penetrates through the insulation layer and is arranged on the substrate; at least part of the protective layer is arranged in the groove and covers at least part of the inner wall of the groove; the packaging layer is arranged on one side of the insulating layer, which is away from the substrate, and in the roove, the packaging layer is filled in the groove, and the protective layer is arranged between the packaging layer and the inner wall of the groove. The display panel provided by the application is beneficial to reducing the risk that impurities such as external water vapor and the like are immersed into the display panel along the interface of the packaging layer and the array substrate to corrode the display panel, and is beneficial to improving the packaging reliability of the display panel.

[0018] In Chinese Patent Application No. 116913928, entitled Display panel, preparation method of display panel and electronic equipment, filed 8 August 2023 by Kunshan Govisionox Optoelectronics co. Ltd. and published 20 October 2023, there is disclosed a display panel, a preparation method of the display panel and electronic equipment, relates to the technical field of display equipment, and aims to solve the technical problem that evaporation materials at blind holes of the display panel cannot be cleaned, so that light transmittance at the blind holes is affected. The display panel includes: the array substrate and the isolation wallare arranged on the same side of the array substrate, and a blind hole area is formed in one side of the array substrate; the isolation wall is located on one side of the array substrate, the isolation wall surrounds the blind hole area, and one end, far away from the array substrate, of the isolation wall is relatively close to one end of the array substrate and inclines towards the center of the blind hole area. According to the application, the partition wall which is inclined toward the blind hole area and surrounds the blind hole area is arranged on one side of the array substrate, so that the evaporation material in the blind hole area can be cleared more cleanly, and the light transmittance of the blind hole area is improved.

[0019] In PCT Patent Application Publication No. 2024 / 027776 entitled Display panel, display device and method for preparing display panel filed 2 August 2023 by Visionox Technology Inc. and published 8 February 2024, there is disclosed a display panel, a display device and a method for preparing the display panel. The display panel comprises a substate, a padded layer disposed on the substrate, a light-emitting layer, and an encapsulation layer disposed on the side of the light-emitting layer away from the substrate. The padded layer comprises a first subdivision and a second subdivision. The second subdivision is located on the side of the first subdivision facing the substrate, and an orthographic projection area of the first subdivision on the substate is larger than an orthographic projection area of the second subdivision on the substate, that is, the second subdivision is recessed relative to the first subdivision to form a groove. A first encapsulation portion is deposited within an isolation space, at least part of the first encapsulation portion being located within the groove. Then a second encapsulation portion is prepared on the side of the first encapsulation portion away from the substrate, and the second encapsulation portion is prepared on the entire surface, has relatively good coating properties and further improves the overall encapsulation performance of the encapsulation layer. The first encapsulation portion and the second encapsulation portion are prepared in steps, which can solve the problem of the encapsulation performance of the encapsulation layer being reduced due to the formation of holes between the encapsulation layer and the padded layer.

[0020] In Chinese Patent Application No. 117098427 entitled Display panel and electronic equipment, filed 27 July 2023 by Hefei Visionox Technology Co. Ltd., and published 21 November 2023, there is disclosed a display panel and an electronic device, wherein the displaypanel comprises: a substrate; a pixel defining layer formed on one side of the substrate and including at least one pixel opening; the light-emitting unit comprises a fist electrode layer, a light-emitting material layer and a second electrode layer, wherein the light-emitting material layer and the second electrode layer are arranged in the pixel opening, and the first electrode layer, the light-emitting material layer and the second electrode layer are sequentially stacked in a direction deviating from the substrate; the peep-proof material layer is formed on the side wall of the pixel defining layer in the pixel opening and is electrically connected with the second electrode layer. By the design, on the premise that the luminous brightness of the display panel under the front view angle is not reduced, the luminous brightness of the display panel under the large view angle can be reduced, and the peep-proof performance of the display panel under the large view angle is improved.

[0021] In Chinese Patent Application No. 116887641, entitled Display panel, preparation method thereof and display device, filed 26 July 2023 by Hefei Visionox Technology Co. Ltd., and published 13 October 2023, there is disclosed a display panel, a preparation method thereof and a display device, wherein the display panel comprises a display area, a frame area arranged around the display area, a substrate, a composite layer positioned at one side of the substrate and arranged in the frame area, wherein the composite layer comprises an auxiliary layer and first organic layer which are sequentially laminated along the direction far away from the substrate, and a cavity is arranged on the side wall of the auxiliary layer facing the display area, so that the first organic layer forms a slope structure with a preset slope angle at the cavity; the packaging layer is positioned on one side of the composite layer far away from the substrate, extends from the display area to the frame area, and at least covers the slope structure.According to the scheme, the gradient angle of the first organic layer can be reduced, so that the stress concentration points of the packaging layer on the slope structure of the first organic layer are avoided, when the display panel is bent, the stress between the packaging layer and the first organic layer can be well released, and the risk of stripping or cracking between the film layers is reduced.

[0022] In Chinese Patent No. 116669477, entitled Display panel, manufacturing method thereof and display device, filed 26 July 2023 by Hefei Visionox Technology Co. Ltd., and granted 24 October 2023, there is disclosed, in the field of display technologies, a displaypanel, a manufacturing method thereof, and a display device. The display panel comprises a substrate, an array circuit layer, a pixel definition layer, a first capacitor and a plurality of subpixel units, the array circuit layer includes a plurality of driving transistors; the sub-pixel unit comprises a first electrode; the first capacitor comprises a first polar plate and a second polar plate, the first polar plate is covered by the pixel definition layer, the second polar plate is positioned on one side of the pixel definition layer, which is away from the substrate, the orthographic projection of the first polar plate on the substrate and the orthographic projection of the second polar plate on the substrate are at least partially overlapped, and the first polar plate is connected with the grid electrode of the driving transistor. According to the technical scheme, the first capacitor is used as the storage capacitor, so that the capacitance value of the storage capacitor is increased, the capacitance value of the storage capacitor is prevented from being restricted by high PPI design, and the stability of the grid voltage of the driving transistor is improved by increasing the capacitance value of the storage capacitor, so that the display effect of the display panel is improved.

[0023] In Chinese Patent No. 116685174, entitled Display panel, filed 24 July 2023 by Kunshan Govisionox Optoelectronics Co. Ltd. and granted 12 April 2024, there is disclosed a display panel, which comprises a plurality of pixel units, wherein each pixel unit comprises a plurality of sub-pixels for respectively emitting light rays with different colors, each sub-pixel of each pixel unit is divided into a first sub-pixel, a second sub-pixel and a third sub-pixel which are sequentially and circumferentially arranged from inside to outside, the centroid of each pixel unit is positioned in the first sub-pixel at the innermost side, at least one of the second sub-pixel and the third sub-pixel at the outer side is arranged into a non-closed ring shape comprising at least one opening notch, and the opening notch is communicated with the inner side and the outer side of the second sub-pixel and / or the third sub-pixel. In the design, the sub-pixels in each pixel unit are sequentially arranged from inside to outside, which is equivalent to the fact that that the sub-pixels are approximately uniformly distributed relative to the centroid of the pixel unit, so that the uniformity of light emission is improved, and the display effect is improved, in addition, by arranging the open holes, the difference of voltage drops of the pixel units at the inner side and the outer side during driving can be reduced, and the overlarge voltage drop of the sub-pixels at the inner side is avoided.

[0024] In PCT Patent Application Publication No. 2024 / 027522, entitled Display panel and preparation method therefor, and display apparatus, filed 24 July 2023 by Visionox Technology Inc., and published 8 February 2024, there is disclosed a display panel and a preparation method therefor, and a display apparatus. The display panel comprises: a driving substrate; a pixel definition layer, located on one side of the driving substrate and comprising a plurality of openings; a conductive layer, located on the side of the pixel definition layer facing away from the driving substrate and comprising a plurality of conductive unit groups, each conductive unit group comprising at least two conductive units arranged at intervals; and a light-emitting device, comprising first electrodes, a light-emitting functional layer and second electrodes which are sequentially stacked, the second electrodes being in contact with the conductive units. Embodiments of the present application facilitate improving the display effect.

[0025] In Chinese Patent Application No. 116963527, entitled Display panel, preparation method of display panel and electronic equipment, filed 21 July 2023 by Hefei Visionox Technology Co. Ltd. and published 27 October 2023, there is disclosed a display panel, a preparation method of the display panel and electronic equipment, and relates to the technical field of display equipment, wherein the display panel comprises a hole area, a display area and a transition area positioned between the hole area and the display area, and the transition area surrounds at least part of the hole area; the display panel further comprises a substrate, isolation columns and a barrier layer; the isolation column comprises an inorganic layer positioned on one side of the substrate, an intermediate layer positioned on one side of the inorganic layer away from the substrate and a top layer positioned on one side of the intermediate layer away from the substrate, wherein the orthographic projection of the intermediate layer on the substrate is positioned in the orthographic projection of the top layer on the substrate, and the orthographic projection of the intermediate layer on the substrate is positioned in the orthographic projection of the inorganic layer on the substrate; the barrier layer covers at least a portion of the surface of the inorganic layer exposed by the intermediate layer and at least a portion of the surface of the intermediate layer exposed, and the barrier layer comprises an inorganic material. The application can make the water oxygen not easy to enter the display area of the display panel from the hole area, thereby improving the display quality of the display panel.

[0026] In Chinese Patent Application No. 117580403, entitled Display Panel, filed 13 July 2023 by Vicino Technology co. Ltd., and Hefei Visionox Technology Co. Ltd., and published 20 February 2024, there is disclosed a display panel, which comprises a substrate, a separation structure and a plurality of light emitting devices, wherein the separation structure and the light emitting devices are positioned on the substrate. Each light emitting device comprises a first electrode, a light emitting functional layer and a second electrode which are sequentially overlapped, and the orthographic projection of the light emitting functional layer on the substrate is positioned in the orthographic projection of the second electrode on the substrate. The isolation structure is defined with a plurality of first openings, the light-emitting functional layer is arranged in the first openings, and the isolation structure comprises a first end portion close to the substrate and a second end portion far away from the substrate. On the same side of the isolation structure, the straight light defined by the edge of the second electrode and the edge of the second end forms a second angle with the surface of the substrate, and the second angle is 20-70 degrees.

[0027] In Chinese Patent Application No. 116669480, entitled Display panel and display device, filed 12 July 2023 by Kunshan Govisionox Optoelectronics Co. Ltd., and granted 5 April 2024, there is disclosed a display panel and a display device, wherein the display panel comprises a substrate; the isolation structure is arranged on one side of the substrate, an isolation opening is formed by enclosing the isolation structure, and a light-emitting unit is arranged in the isolation opening; the light conversion layer comprises a light conversion unit which is arranged in at least part of the isolation opening, and is positioned on one side of the light emitting unit, which is away from the substrate, and the light conversion unit is used for converting the light emitted by the light emitting unit into a target color. The application can solve the technical problem of high difficulty in the preparation process of the display panel.

[0028] In Chinese Patent Application No. 116600606, entitled Display panel and display device, filed 12 July 2023 by Kunshan Govisionox Optoelectronics Co. Ltd., and granted 19 December 2023, there is disclosed a display panel and a display device, wherein the display panel comprises a substrate; the isolation structure is arranged on one side of the pixel limiting part, which is away from the substrate, and the isolation structure is enclosed to form an isolation opening, and a light-emitting unit is arranged in the isolation opening; the lightconversion layer comprises a light conversion unit which is arranged in at least part of the isolation opening and is positioned at one side of the light emitting unit, which is away from the substrate, and the light conversion unit is used for converting the light emitted by the light emitting unit into a target color; the packaging layer comprises a first sub-layer, and the first sub-layer is positioned on one side of the light conversion unit, which is away from the light emitting unit. The application can reduce the manufacturing process cost of the display panel and solve the technical problem of high manufacturing process difficulty of the display panel.

[0029] In Chinese Patent Application No. 117396039, entitled Display panel and display device, filed 12 July 2023 by Kunshan Govisionox Optoelectronics Co. Ltd., and published 12 January 2024, there is disclosed a display panel and a display device, wherein the display panel comprises a substrate, an isolation structure, a light-emitting functional layer and a color conversion layer. The isolation structure is arranged on one side of the substrate, the isolation structure is provided with a plurality of opening structures, the light-emitting functional layer is arranged on one side of the substrate, and the light-emitting functional layer comprises a plurality of light-emitting structures which are respectively arranged in the opening structures. The color conversion layer is arranged on one side of the isolation structures, which is far away from the substrate, and the color conversion layer comprises a plurality of color conversion structures, the orthographic projection of the color conversion structure on the substrate and the orthographic projection of the light-emitting structure on the substrate are at least partially overlapped, and the color conversion structure comprises C3PL material. The embodiment of the application is beneficial to improving the preparation efficiency of the display panel, has stronger flexibility, and can meet the preparation requirements of different display panels.

[0030] In Chinese Patent Application No. 116600612, entitled Display panel, display device, and preparation method of display panel filed 14 July 2023 by Hefei Visionox Technology Co. Ltd., and published 15 August 2023, there is disclosed a display panel, a display device and a preparation method of the display panel, wherein the display panel comprises the following components: the substrate comprises a base, a first electrode and an insulating layer, wherein the first electrode and the insulating layer are arranged on one side of the base, the surface of the insulating layer is recessed towards the base to form a pixel opening, the first electrode is exposed out of the pixel opening, the surface of the substrate is recessed to form an isolationgroove, and the isolation groove is arranged around at least part of the pixel opening; the lightemitting unit is at least partially arranged in the pixel opening and positioned at one side of the first electrode, which is away from the base part; the second electrode is arranged on one side of the light-emitting unit, which is away from the first electrode; and the conductive structure is arranged on one side of the base part and is electrically connected with the second electrode. By arranging the isolation groove, the material of the light-emitting layer can be isolated at the isolation groove to form the light-emitting unit, so that the display panel does not need to be provided with a high-precision metal mask plate during preparation, the manufacturing process is simple, the cost is low, and the display panel can have a good aperture opening ratio.

[0031] In Chinese Patent Application No. 116648095, entitled Display panel filed 24 July 2023 by Hefei Visionox Technology Co. Ltd., and published 25 August 2023, there is disclosed a display panel that includes a substrate, a plurality of sub-pixels and an isolation structure. A plurality of sub-pixels are arranged at intervals on the substrate, and an isolation structure is arranged on the substrate, and the isolation structure is used to separate adjacent sub-pixels; the isolation structure includes a plurality of sub-isolation structures, and the plurality of subisolation structures includes a first sub-isolation structure and a second sub-isolation structure. For the sub-isolation structure, the width of the orthographic projection fo at least part of the first sub-isolation structure on the substrate is Di, and the width of the orthographic projection of at least part of the second sub-isolation structure on the substrate is D2. The width is the dimension of the orthographic projection of the sub-isolation structure on the substate in a direction perpendicular to the extending direction of the sub-isolation structure., wherein, Di > D2. The design of Di > D2 can increase the aperture ratio of the display panel.

[0032] In Chinese Patent Application No. 115332307, entitled Display panel, preparation method thereof and display device filed 30 August 2022 by Kunshan Go visionox Optoelectronics Co. Ltd., and published 11 November 2022, there is disclosed a display panel, a preparation method thereof, and a display device. The inorganic functional layer comprises a plurality of inorganic layers which are stacked in the thickness direction of the display panel, the plurality of inorganic layers penetrate in the thickness direction of the display panel to form a pixel opening, the plurality of inorganic layers at least comprises a first inorganic layer and a second inorganic layer which is positioned on one side, away from the substrate, of the firstinorganic layer, and the orthographic projection area of the second inorganic layer on the substrate is larger than that of the first inorganic layer on the substrate. The carrier layer comprises a first part and a second part, the first part is located on the side, facing away from the substrate, or the inorganic functional layer, and the second part is located in the pixel opening and is arranged at intervals. The display panel provided by the application obviously improves the phenomenon of transverse current transmission in the current carrier layer, improves the crosstalk problem between sub-pixels, improves the display quality of the display panel, and is simple in preparation process.

[0033] In Chinese Patent Application No. 117769329, entitled Display panel, preparation method thereof and display device filed 1 December 2023 by Kunshan Govisionox Optoelectronics Co. Ltd. and Hefei Visionox Technology Co. Ltd., and published 26 March 2024, there is disclosed, in the technical field of display, in particular, a display panel, a preparation method thereof, and a display device, wherein the display panel comprises a display area, a hole area and a transition area positioned between the display area and the hole area, and the display area at least partially surrounds the hole area; the display panel positioned in the transition area comprises: a substrate; the inorganic layer positioned on one side of the substrate comprises isolation columns and grooves positioned in the transition region; the first barrier part of the first electrode layer is positioned at one side of the isolation column far away from the substrate; the second electrode layer comprises a first electrode part and a second electrode part which are arranged at intervals, and the first electrode part and the second electrode part are separated by a separation column and a first separation part; the first electrode part is positioned in the groove; the packaging layer is located one side of the second electrode layer away from the substrate, the second electrode layer does not have the risk of being mutually lapped and conducted with metal, water and oxygen in the hole area can be blocked, the display device is prevented from being corroded, and the display effect is guaranteed.

[0034] In Chinese Patent Application No. 117042541, entitled Display panel and display device filed 25 August 2023 by Kunshan Govisionox Optoelectronics Co. Ltd. and Hefei Visionox Technology Co. Ltd., and published 10 November 2023, discloses a display panel and a display device, wherein the display panel comprises an open pore area and a partition area,the partition area is arranged around at least part of the periphery of the open pore area, and the display panel comprises an array substrate, a protective layer and a packaging layer; the array substrate comprises a substrate and an insulating layer, the insulating layer is arranged on one side of the substrate, the array substrate is provided with a groove arranged in the partition area, and the groove penetrates through the insulating layer and is arranged on the substrate; at least part of the protective layer is arranged in the groove and covers at least part of the inner wall of the groove; the packaging layer is arranged on sone side of the insulating layer, which is away from the substrate, and in the groove, the packaging layer is filled in the groove, and the protective layer is arranged between the packaging layer and the inner wall of the groove. The display panel provided by the application is beneficial to reducing the risk that impurities such as external water vapor and the like are immersed into the display panel along the interface of the packaging layer and the array substrate to corrode the display panel, and is beneficial to improving the packaging reliability of the display panel.

[0035] In Chinese Patent Application No. 117460296 entitled Display panel, preparation method thereof and display device filed 30 October 2023 by Kunshan Go visionox Optoelectronics Co. Ltd., and Hefei Visionox Technology Co. Ltd., and published 26 January 2024, there is disclosed a display panel, a preparation method thereof and display equipment. The display panel includes a display region, a hole region, and an isolation region between the display region and the hole region, the display panel further including: a substrate; an insulating layer laminated on one surface of the substrate; the isolation column is positioned in the isolation region and comprises an inorganic pad high layer, a first planarization layer and a second planarization layer which are sequentially stacked on the insulating layer along the direction away from the substrate; orthographic projections of the first planarization layer and the second planarization layer on the insulating layer fall in orthographic projections of the inorganic pad layer on the insulating layer; the functional film layer extends from the display area to the isolation area, and the functional film layer extending to the isolation area is disconnected at the position of the isolation column. The display panel effectively avoids the problem of poor display of the display panel caused by the fact that the hole area is invalid due to the electrochemical effect caused by the charge when the product is subjected to ESD and reliability test, and water vapor and oxygen enter the display area of the display panel.

[0036] In Chinese Patent Application No. 116634831 entitled Display panel manufacturing method and display panel filed 18 May 2023 by Kunshan Govisionox Optoelectronics Co. Ltd. and Hefei Visionox Technology Co. Ltd., and published 22 August 2023, there is disclosed a manufacturing method of a display panel and the display panel. The method comprises the following steps: providing a substrate, wherein the substrate is provided with a first sub-pixel area, a second sub-pixel area and a third sub-pixel area; forming a first color organic light emitting material layer on a substrate; patterning the first color organic light emitting material layer by using a photolithography process, and reserving a portion of the first color organic light emitting material layer located in the first sub-pixel region to form a first color organic light emitting layer; forming a second color organic light emitting material layer on the substrate; patterning the second color organic light emitting material layer by using a photolithography process, and reserving a portion of the second color organic light emitting material layer located in the second sub-pixel region to form a second color organic light emitting layer; forming a third color organic light emitting material layer on the substrate; and patterning the third color organic luminescent material layer by utilizing a photoetching process, and reserving the part of the third color organic luminescent material layer, which is positioned in the third sub-pixel area, so as to form the third color organic luminescent layer.

[0037] In United States Patent Application Publication No. 2024 / 0099110 entitled Manufacturing device of display device and manufacturing method of display device filed by MIZUKOSHI, Hirofumi, et al. and published 21 March 2024, there is disclosed, according to one embodiment, a manufacturing method of a display device that includes preparing a processing substrate by forming a lower electrode, a rib and a partition, forming an organic layer on the lower electrode, forming an upper electrode on the organic layer, forming a first transparent layer on the upper electrode by depositing a first organic material, forming a second transparent layer on the first transparent layer by depositing a second organic material, and depositing the second organic material on each of a plurality of crystal oscillators included in a film thickness measurement device by emitting the second organic material from first and second nozzles of an evaporation source before forming the second transparent layer.

[0038] In United States Patent Application Publication No. 2024 / 0074248 entitled Display device filed by KAWAMURA, Shinichi, et al., and published 29 February 2024, there isdisclosed, according to one embodiment, a display device that comprises a first lower electrode, a rib including a first pixel aperture, a partition including a lower portion on the rib and an upper portion protruding from a side surface of the lower portion, a first upper electrode, and a first organic layer between the first lower electrode and the first upper electrode. The lower portion includes a bottom layer and a stem layer on the bottom layer. The bottom layer is formed of a material which has a smaller etching rate to a mixed acid containing phosphoric acid, nitric acid, and acetic acid than the stem layer and which is conductive.

[0039] In United States Patent Application Publication No. 2023 / 0371344 entitled Manufacturing method of display device filed 8 May 2023 by TAKEDA, Atsushi, and published 16 November 2023, there is disclosed, according to one embodiment, a manufacturing method that allows the manufacture of a display device including a partition including a lower portion provided on a rib including a pixel aperture and an upper portion protruding from a side surface of the lower portion. The method includes forming a lower electrode, forming a rib layer, forming a lower layer, forming an upper layer, forming a resist, forming the rib by a first etching process, forming the upper portion by a second etching process after the first etching process, and forming the lower portion by a third etching process after the second etching process.

[0040] In United States Patent Application Publication No. 2023 / 0320172 entitled Display device and manufacturing method thereof filed 4 April 2023 by FUKUDA, Kaichi, and published 5 October 2023, there is disclosed, according to one embodiment, a display device that includes a lower electrode, a rib including a pixel aperture, a partition on the rib, an upper electrode, and an organic layer between the lower electrode and the upper electrode. The partition includes a conductive first portion, a conductive second portion which is provided on the first portion and is in contact with the upper electrode, and a third portion provided on the second portion. A lower end of the second portion protrudes in a width direction of the partition relative to the first portion. The third portion protrudes in the width direction relative to an upper end of the second portion.

[0041] In United States Patent Application Publication No. 2023 / 0309367 entitled Method of manufacturing display device and mother substrate filed 24 March 2023 by TABATAKE, Hiroshi, and published 28 September 2023, there is disclosed, according to one embodiment, amethod of manufacturing a display device, that includes forming a partition including a lower portion disposed on a first surface of a base and an upper portion protruding from a side surface of the lower portion, and measuring the distance between a side surface of the lower portion and an end portion of the upper portion from a side of a second surface opposing the first surface of the base.

[0042] In United States Patent Application Publication No. 2023 / 0240118 entitled Display device and manufacturing method of the same filed 25 January 2023 by FUKUDA, Kaichi, and published 27 July 2023, there is disclosed, according to one embodiment, a display device that comprises a lower electrode, a rib, a partition, an upper electrode, an organic layer between the lower electrode and the upper electrode, and a sealing layer above the upper electrode. The partition includes a lower portion on the rib, and an upper portion on the lower portion with an end portion protruding from a side surface of the lower portion. The lower portion includes a first aluminum layer of a first aluminum alloy, and a second aluminum layer of pure aluminum or a second aluminum alloy different from the first aluminum alloy and which is arranged on the first aluminum layer.

[0043] In United States Patent Application Publication No. 2023 / 0371314 entitled Display device and manufacturing method thereof filed 12 April 2023 by ISHIDA, Arichika, and published 16 November 2023, there is disclosed, according to one embodiment, a display device that includes a lower electrode, a rib covering a part of the lower electrode and including a pixel aperture, a partition surrounds the pixel aperture, an upper electrode facing the lower electrode, and an organic layer between the lower and upper electrodes. The partition includes a conductive lower portion including an annular side surface which surrounds the pixel aperture, and an upper portion including an annular protrusion which protrudes from the side surface. The upper electrode is in contact with the side surface of the lower portion. The protrusion has a constant width over a whole circumference.

[0044] In United States Patent Application Publication No. 2023 / 0309340 entitled Display device and manufacturing method of display device filed 21 March 2023 by TAKAYAMA, Masaru, and published 28 September 2023, there is disclosed, according to one embodiment, a display device that includes a lower electrode, a rib formed of an inorganic insulating material, a partition provided on the rib, and organic layer provided on the lower electrode, overlappingthe rib, spaced apart from the partition and including a light emitting layer, a sealing layer formed of an inorganic insulating material, provided above the organic layer and being in contact with the partition, and an etching stopper layer provided between the rib and the sealing layer, and covering the rib between the organic layer and the partition. The etching stopper layer is formed of a material different from the sealing layer. An etching rate of the etching stopper layer is less than an etching rate of the sealing layer.

[0045] In United States Patent Application Publication No. 2023 / 0320142 entitled Display device and manufacturing method of display device filed 27 March 2023 by MIZUKOSHI, Hirofumi, et al., and published 5 October 2023, there is disclosed, according to one embodiment, a manufacturing method of a display device, in which a first etching stopper layer and a first sealing layer is formed. A second etching stopper layer and a second sealing layer is formed. A third etching stopper layer and a third sealing layer is formed. An etching rate of the first etching stopper layer is less than an etching rate of the first sealing layer. An etching rate of the second etching stopper layer is less than an etching rate of the second sealing layer. An etching rate of the third etching stopper layer is less than an etching rate of the third sealing layer. A thickness of each of the first etching stopper layer and the second etching stopper layer is greater than a thickness of the third etching stopper layer.

[0046] In United States Patent Application Publication No. 2023 / 0380216 entitled Manufacturing method display device and evaporation device filed 16 May 2023 by MIZUKOSHI, Hirofumi, et al., and published 23 November 2023, there is disclosed, according to one embodiment, a manufacturing method of a display device that includes preparing a processing substrate, forming an organic layer, and forming an etching stopper layer on the organic layer. The forming the etching stopper layer includes carrying the processing substrate into a chamber, inside the chamber, emitting a material for forming the etching stopper layer from an evaporation source which inclines with respect to a normal of the processing substrate, and conveying the processing substrate while rotating the processing substrate in a plane orthogonal to the normal, and depositing the material emitted from the evaporation source on the processing substrate.

[0047] In United States Patent Application Publication No. 2023 / 0225180 entitled Method of manufacturing display device filed 9 January 2023 by KOKAME, Hiraaki, et al., and published13 July 2023, there is disclosed, according to one embodiment, a method of manufacturing a display device that includes preparing a processing substrate with a lower electrode, a rib, and a partition including a lower portion and an upper portion, forming a first organic layer and a second organic layer spaced apart from the first organic layer, forming a first upper electrode and a second upper electrode spaced apart from the first upper electrode, forming a sealing layer located on the first upper electrode and the second upper electrode, forming a resist covering a part of the sealing layer, performing anisotropic dry etching using the resist as a mask, performing isotropic dry etching using the resist and a mask, and removing the sealing layer exposed from the resist.

[0048] In United States Patent Application Publication No. 2023 / 0240122, entitled Method of manufacturing display device and filed 24 January 2023 by MATSUMOTO, Yuko, and published 27 July 2023, there is disclosed, according to one embodiment, a method of manufacturing a display device that includes forming a first organic layer covering a lower electrode and a second organic layer on an upper portion of a partition, forming a first upper electrode and a second upper electrode, forming a first transparent layer and a second transparent layer, forming a first inorganic layer and a second inorganic layer, forming a sealing layer on the first inorganic layer and the second inorganic layer, forming a resist covering the sealing layer directly above the lower electrode and covering a part of the sealing layer directly above the partition, performing dry etching using the resist as a mask, and performing wet etching by an acidic solution using the resist as a mask.

[0049] In United States Patent Application Publication No. 2023 / 0284509 entitled Display device manufacturing method and display device filed 28 February 2023 by SUZUMURA, Isao, et al., and published 7 September 2023, there is disclosed, according to one embodiment, a display device manufacturing method that comprises forming a lower electrode including a first metal layer and a conductive oxide layer which covers the first metal layer and which has a thickness of 15 nm or more and 50 nm or less, forming a rib covering at least a part of the lower electrode and including a pixel aperture which exposes the conductive oxide layer, forming a second metal layer above the rib and the conductive oxide layer exposed through the pixel aperture, and patterning the second metal layer by etching including wet etching to form a partition on the rib.

[0050] In United States Patent Application Publication No. 2023 / 0263013 entitled Display device filed 14 February 2023 by FUKUDA, Kaichi, and published 17 August 2023, there is disclosed, according to one embodiment, a display device that includes a first lower electrode having a first end portion, an insulating layer covering the first end portion, a second lower electrode having a second end portion located on the insulating layer, a first upper electrode facing the first lower electrode, a second upper electrode facing the second lower electrode, a first organic layer located between the first lower electrode and the first upper electrode, and a second organic layer located between the second lower electrode and the second upper electrode.

[0051] In United States Patent Application Publication No. 2023 / 0309367 entitled Method of manufacturing display device and mother substrate filed 24 March 2023 by TABATAKE, Hiroshi, and published 28 September 2023, there is disclosed, according to one embodiment, a method of manufacturing a display device that includes forming a partition including a lower portion disposed on a first surface of a base and an upper portion protruding from a side surface of the lower portion, and measuring the distance between a side surface of the lower portion and an end portion of the upper portion from a side of a second surface opposing the first surface of the base.

[0052] In United States Patent Application Publication No. 2023 / 0240125 entitled Method of manufacturing display device filed 25 January 2023 by OGAWA, Hiroshi, and published 27 July 2023, there is disclosed, according to one embodiment, a manufacturing method to manufacture a display device in which a partition including a lower portion and an upper portion arranged on the lower portion to protrude from a side surface of the lower portion is arranged on a boundary between adjacent sub-pixels, and the method comprises forming a metal layer above a substrate, forming the upper portion on the metal layer, reducing a thickness of a first portion of the metal layer exposed from the upper portion by anisotropic etching, and forming the lower portion by reducing a width of a second portion of the metal layer located under the upper portion by isotropic etching.

[0053] In United States Patent Application Publication No. 2023 / 0345806 entitled Manufacturing method of display device and evaporation device filed 12 April 2023 by MIZUKOSHI, Hirofumi, et al., and published 26 October 2023, there is disclosed, according toone embodiment, a processing substrate prepared by forming an organic layer and an etching stopper layer. The forming of the etching stopper layer includes, in a first mode, inclining an evaporation source, and depositing a material emitted from the evaporation source while relative positions of the evaporation source and the processing substrate are changed, and in a second mode, inclining the evaporation source in a manner different from the first mode, and depositing the material emitted from the evaporation source while the relative positions of the evaporation source and the processing substrate are changed in an opposite manner of the first mode.

[0054] In United States Patent Application Publication No. 2024 / 0008316 entitled Display device filed 29 June 2023 by KAWAMURA, Shinichi, et al., and published 12 December, 2023, there is disclosed, according to one embodiment, a display device that comprises a first lower electrode, a rib including a first pixel aperture, a partition including a lower portion on the rib and an upper portion protruding from a side surface of the lower portion, a first upper electrode, and a first organic layer between the first lower electrode and the first upper electrode. The lower portion includes a bottom layer and a stem layer on the bottom layer. The bottom layer is formed of a material which has a smaller etching rate to a mixed acid containing phosphoric acid, nitric acid, and acetic acid than the stem layer and which is conductive.

[0055] In United States Patent Application Publication No. 2023 / 0422583 entitled Display device and manufacturing method of display device filed 23 June 2023 by KATO, Daisuke, et al., and published 28 December 2023, there is disclosed, according to one embodiment, a manufacturing method of a display device includes preparing a processing substrate by forming a lower electrode, forming a rib, and forming a partition, forming an organic layer on the lower electrode, forming an upper electrode on the organic layer, forming a cap layer on the upper electrode, forming a sealing layer on the cap layer, forming a patterned resist on the sealing layer, and removing the sealing layer exposed from the resist by dry etching. The sealing layer includes a first high-density layer and a low-density layer. When dry etching is applied to the sealing layer, an etching rate of the low-density layer is greater than an etching rate of the first high-density layer.

[0056] In United States Patent Application Publication No. 2023 / 0354678 entitled Display device and manufacturing method of display device filed 12 April 2023 by MIZUKOSHI, Hirofumi, etal., and published 2 November 2023, there is disclosed, according to one embodiment, a manufacturing method of a display device that includes forming processing substrate, forming an organic layer, forming an upper electrode, forming a transparent layer, and forming an inorganic layer. The forming the upper electrode includes inclining a first evaporation source with respect to a normal of the processing substrate and depositing a material emitted from the first evaporation source while conveying the processing substrate. The forming the inorganic layer includes inclining a second evaporation source to a side opposite to a side to which the first evaporation source is inclined and depositing a material emitted from the second evaporation source while conveying the processing substrate.

[0057] In some non-limiting examples, there may be an aim to increase an aperture ratio of the emissive regions of (sub-) pixels in an opto-electronic device by dispensing with the deposition of one of the electrodes using fine metal masks (FMM).BRIEF DESCRIPTION OF THE DRAWINGS

[0058] Examples of the present disclosure will now be described by reference to the following figures, in which identical reference numerals in different figures indicate at least one of: identical, and in some non-limiting examples, at least one of: analogous, and corresponding elements, and in which:

[0059] FIG. 1A is a schematic diagram illustrating a simplified example source-follower circuit for driving an organic light-emitting diode (OLED) using a PMOS (P-type) driver thin film transistor (TFT);

[0060] FIG. IB is a schematic diagram illustrating a simplified example constant- current circuit for driving an OLED using a P-type driver TFT;

[0061] FIG. 1C is a schematic diagram illustrating a simplified example source-follower circuit for driving an OLED using an NMOS (N-type) driver TFT;

[0062] FIG. ID is a schematic diagram illustrating a simplified example constant-current circuit for driving an OLED using an N-type driver TFT;

[0063] FIG.2 is a simplified block diagram from a longitudinal aspect, of an example device having a plurality of layers in a lateral aspect, formed by selective deposition of a patterning coating in a first portion of the lateral aspect, followed by deposition of a closed coating of deposited material in a second portion thereof, according to an example in the present disclosure;

[0064] FIG.3 is a simplified diagram, from a longitudinal aspect, of an example version of the device of FIG.2, in which the closed coating of deposited material in the second portion forms a second electrode of an opto-electronic device, according to an example in the present disclosure;

[0065] FIG.4 is a schematic diagram illustrating, in plan, an example version of the device of FIG. 3, showing sub-pixels being partially separated by layer discontinuities, according to an example in the present disclosure;

[0066] FIG. 5A is a schematic diagram illustrating an example cross-sectional view of a fragment of the device of FIG.4, taken along line 5A-5A, in which a layer discontinuity comprising a multi-facing undercut partition structure, is surrounded by an emissive region, according to an example in the present disclosure;

[0067] FIG. 5B is a schematic diagram illustrating an example cross-sectional view of a fragment of the device of FIG.4, taken along line 5B-5B, in which an emissive region is surrounded, along at least one lateral aspect, by a layer discontinuity comprising a facing undercut partition structure, according to an example in the present disclosure;

[0068] FIG. 5C is a schematic diagram illustrating an example cross-sectional view of a fragment of the device of FIG.4, taken along line 5C-5C, in which a non-emissive region is surrounded, along at least one lateral aspect, by a layer discontinuity comprising a facing undercut partition structure, according to an example in the present disclosure;

[0069] FIG. 5D is a SEM image of an example device showing a grid of linear partition structures defining a plurality of cells each corresponding to a pixel of a plurality of sub-pixels, and having a plurality of through-holes according to the structure of the device of FIG. 5C;

[0070] FIG. 5E is a schematic diagram illustrating an example cross-sectional view of a fragment of the device of FIG.4, taken along line 5E-5E, in which an emissive region is surrounded, along at least one lateral aspect, by a layer discontinuity comprising a non-facing undercut partition structure, according to an example in the present disclosure;

[0071] FIG.6 is a schematic diagram showing an example process for depositing a patterning coating in a pattern on an exposed layer surface of an underlying layer in an example version of the device of FIG.2, according to an example in the present disclosure;

[0072] FIG. 7 is a schematic diagram showing an example process for depositing a deposited material in the second portion on an exposed layer surface that comprises the deposited pattern of the patterning coating of FIG.6 where the patterning coating is a nucleation-inhibiting coating (NIC) according to an example in the present disclosure;

[0073] FIG. 8A is a schematic diagram illustrating an example cross-sectional view of a fragment of the device of FIG. 5A, wherein a patterning coating is disposed thereon prior to exposing the device to a vapour flux of a deposited material, according to an example in the present disclosure;

[0074] FIG. 8B is a schematic diagram illustrating an example cross-sectional view of a device, wherein a patterning coating is disposed thereon prior to exposing the device to a vapour flux of a deposited material, in which a conductive lower section of a partition extends through a PDL and a TFT insulating layer and is electrically coupled with an N-type driver TFT and with an independent cathode in a common anode configuration to form a constantcurrent circuit for driving an OLED, according to an example in the present disclosure;

[0075] FIG. 8C is a schematic diagram illustrating an example cross-sectional view, and a corresponding plan view of a device, in which a lower section of a partition extends through the PDL and TFT insulating layer to be electrically coupled with a touch control circuit beneath the frontplane of the device to provide an in-cell touch capability to the device, according to an example in the present disclosure;

[0076] FIG. 8D is a schematic diagram illustrating an example cross-sectional view, and a corresponding plan view of a device, in which a layer discontinuity comprising a multi-facing undercut partition structure, is surrounded by an emissive region, whereby a CGL of emissiveregions are not electrically coupled across the partition, according to an example in the present disclosure;

[0077] FIG. 8E is a schematic diagram illustrating an example plan view, and corresponding example cross-sectional views of a device, wherein a patterning coating is disposed thereon prior to exposing the device to a vapour flux of a deposited material, comprising a plurality of pixels, each comprising a plurality of sub-pixels, separated by linear partition segments, taken along line 8E-8E, other than at contact line structures, taken along line 8A-8A, wherein, other than at the contact line structures, the partition segments exhibit an upper section thereof that substantially encloses an auxiliary electrode forming a lower section thereof, such that the second electrode of the emissive regions are not electrically coupled with the auxiliary electrode, according to an example in the present disclosure;

[0078] FIG. 8F is a schematic diagram illustrating an example cross-sectional view of a fragment of the device of FIG. 5B, wherein a patterning coating is disposed thereon prior to exposing the device to a vapour flux of a deposited material, according to an example in the present disclosure;

[0079] FIG. 8G is a schematic diagram illustrating an example cross-sectional view of a fragment of the device of FIG. 5C, wherein a patterning coating is disposed thereon prior to exposing the device to a vapour flux of a deposited material, according to an example in the present disclosure;

[0080] FIG. 8H is a schematic diagram illustrating an example cross-sectional view of a fragment of the device of FIG. 5E, wherein a patterning coating is disposed thereon prior to exposing the device to a vapour flux of a deposited material, according to an example in the present disclosure;

[0081] FIG.9 is a schematic diagram illustrating an example cross-sectional view of an example user device, comprising a body, a display panel having a plurality of layers, comprising at least one aperture therewithin, through which at least one electromagnetic signal may be exchanged, and at least one under-display component within the device, according to an example in the present disclosure;

[0082] FIG. 10A shows an example fragment of at least one display part of the display panel of FIG.9, according to an example in the present disclosure;

[0083] FIGs. 10B and 10C show various example fragments of a signal-exchanging part comprising at least one transmissive region, according to an example in the present disclosure;

[0084] FIGs. 11A-11B, and 11C-11D are respective sets of stacked schematic diagrams illustrating respectively in plan and in cross-section, an example cross-sectional view of a fragment of a signal-exchanging part of a display panel, showing an aperture of a transmissive region whose boundary is defined by an intersection of a boundary of a first layer aperture with a boundary of a second layer aperture according to an example in the present disclosure;

[0085] FIG. 12A is a schematic diagram illustrating an example version of the device of FIG.2 in a cross-sectional view according to an example in the present disclosure;

[0086] FIG. 12B is a schematic diagram illustrating the device of FIG. 12A in a complementary plan view according to an example in the present disclosure;

[0087] FIGs. 13A-13B are schematic diagrams that show various potential behaviours of a patterning coating at a deposition interface with a deposited layer in an example version of the device of FIG.2 according to various examples in the present disclosure;

[0088] FIGs. 14A-14H are simplified block diagrams from a cross-sectional aspect, of example versions of the device of FIG.2, showing various examples of possible interactions between the particle structure patterning coating and the particle structures according to examples in the present disclosure;

[0089] FIG. 15 is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG.3 with additional example deposition steps according to an example in the present disclosure;

[0090] FIG. 16 is a schematic diagram that may show example stages of an example process for manufacturing an example version of an OLED device having sub-pixel regions having a second electrode of different thickness according to an example in the present disclosure;

[0091] FIG. 17 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device in which a second electrode is coupled with an auxiliary electrode according to an example in the present disclosure;

[0092] FIG. 18 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device having a partition and a sheltered region, such as a recess, in a non-emissive region thereof according to an example in the present disclosure;

[0093] FIGs. 19A-19B are schematic diagrams that show example cross-sectional views of an example OLED device having a partition and a sheltered region, such as an aperture, in a non-emissive region, according to various examples in the present disclosure;

[0094] FIG.20 is an example energy profile illustrating energy states of an adatom absorbed onto a surface according to an example in the present disclosure;

[0095] FIG.21 is a schematic diagram illustrating the formation of a film nucleus according to an example in the present disclosure; and

[0096] FIG.22 is a block diagram of an example computer device within a computing and communications environment that may be used for implementing devices and methods in accordance with representative examples of the present disclosure.

[0097] In the present disclosure, a reference numeral having at least one of: at least one numeric value (including without limitation, in at least one of: superscript, and subscript), and at least one alphabetic character (including without limitation, in lower-case) appended thereto, may be considered to refer to at least one of: a particular instance, and subset thereof, of the feature (element) described by the reference numeral. Reference to the reference numeral without reference to the at least one of: the appended value(s), and the character(s), may, as the context dictates, refer generally to the feature(s) described by at least one of: the reference numeral, and the set of all instances described thereby. Similarly, a reference numeral may have the letter “x’ in the place of a numeric digit. Reference to such reference numeral may, as the context dictates, refer generally to feature(s) described by the reference numeral, where the character “x” is replaced by at least one of: a numeric digit, and the set of all instances described thereby.

[0098] In the present disclosure, for purposes of explanation and not limitation, specific details are set forth to provide a thorough understanding of the present disclosure, including without limitation, particular architectures, interfaces and techniques. In some instances, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications are omitted to not obscure the description of the present disclosure with unnecessary detail.

[0099] Further, it will be appreciated that block diagrams reproduced herein can represent conceptual views of illustrative components embodying the principles of the technology.

[0100] Accordingly, the system and method components have been represented where appropriate by conventional symbols in the drawings, showing only those specific details that are pertinent to understanding the examples of the present disclosure, to not obscure the disclosure with details that will be readily apparent to those of ordinary skill in the art having the benefit of the description herein.

[0101] Any drawings provided herein may not be drawn to scale and may not be considered to limit the present disclosure in any way.

[0102] Any feature shown in dashed outline may in some examples be considered as optional.SUMMARY

[0103] It is an object of the present disclosure to obviate / mitigate at least one disadvantage of the prior art.

[0104] According to a broad aspect, there is disclosed an opto-electronic device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by one of a plurality of lateral axes thereof, comprising: at least one emissive region comprising a first electrode, a second electrode, and at least one emissive region semiconducting layer therebetween, the first electrode disposed between the substrate and the at least one emissive region semiconducting layer; and at least one undercut partition, disposed laterally of and proximate to the at least one emissive region, providing a local discontinuity in a longitudinal aspect defined by a longitudinal axis substantially transverse to the plurality of lateral axes, the partition comprising a lower section and an upper section disposed thereon, a sidewall of thelower section being recessed relative to an edge of the upper section in the lateral aspect to define a sheltered region thereunder, at least one partition semiconducting layer disposed on an exposed layer surface of the upper section; and a conductive coating disposed on an exposed layer surface of the at least one partition semiconducting layer; wherein at least one of the: lateral aspect of the sheltered region, and longitudinal discontinuity, of the at least one partition imposes a discontinuity between at least one of the: second electrode, and at least one emissive region semiconducting layer, of one of the at least one emissive regions; with at least one of: a corresponding one of the: second electrode, and at least one emissive region semiconducting layer, of another one of the at least one emissive region, an auxiliary electrode proximate to the at least one partition, the conductive coating, and the at least one partition semiconducting layer.

[0105] In some non-limiting examples, the device may further comprise at least one patterning coating disposed on at least one of: the second electrode, and the conductive coating.

[0106] In some non-limiting examples, the at least one partition may surround at least a part of the at least one emissive region.

[0107] In some non-limiting examples, the at least one partition extend substantially in a constant direction.

[0108] In some non-limiting examples, the at least one partition may extend along at least a side of the at least one emissive region.

[0109] In some non-limiting examples, the at least one partition may extend substantially parallel to a a side of the at least one emissive region.

[0110] In some non-limiting examples, a gap may extend in the lateral aspect between a first one and a second one of the at least one partition.

[0111] In some non-limiting examples, the gap may be disposed proximate to a vertex of the at least one emissive region.

[0112] In some non-limiting examples, the at least one partition may lie between a first one of the at least one emissive region and a second one of the at least one emissive region in the lateral aspect.

[0113] In some non-limiting examples, the at least one emissive region may he between a first one of the at least one partition and a second one of the at least one partition in the lateral aspect.

[0114] In some non-limiting examples, a non-emissive region may lie between a first one of the at least one partition and a second one of the at least one partition in the lateral aspect.

[0115] In some non-limiting examples, the first one of the at least one partition may lie between the non-emissive region and the at least one emissive region.

[0116] In some non-limiting examples, the non-emissive region may form a through-hole within a linear one of the at least one partition.

[0117] In some non-limiting examples, the sheltered region may he between the lower section and one of the at least one emissive regions.

[0118] In some non-limiting examples, the lower section may lie between the sheltered region and one of the at least one emissive regions.

[0119] In some non-limiting examples, the upper section may extend laterally beyond the lower section on at least one side thereof.

[0120] In some non-limiting examples, the at least one side may be proximate to one of the at least one emissive regions.

[0121] In some non-limiting examples, the at least one side may face one of the at least one emissive regions.

[0122] In some non-limiting examples, the lower section may be disposed on an exposed layer surface of a pixel definition layer (PDL).

[0123] In some non-limiting examples, the lower section may be disposed proximate to an uppermost layer of the PDL.

[0124] In some non-limiting examples, a lowermost surface of the lower section may be disposed below an uppermost layer of the PDL.

[0125] In some non-limiting examples, the upper section may extend longitudinally above an uppermost layer of the PDL.

[0126] In some non-limiting examples, the lower section may be disposed proximate to a lowermost layer of the PDL.

[0127] In some non-limiting examples, a bottom of the lower section may be disposed below a lowermost layer of the PDL.

[0128] In some non-limiting examples, a bottom of the lower section may be disposed on an exposed layer surface of an underlying layer on which the PDL is disposed.

[0129] In some non-limiting examples, a longitudinal extent of an uppermost layer of the upper section may be proximate to an uppermost layer of the PDL.

[0130] In some non-limiting examples, the upper section may extend downward toward the substrate on a side of the at least one partition other than where the sheltered region lies.

[0131] In some non-limiting examples, the auxiliary electrode may he below the lower section.

[0132] In some non-limiting examples, the lower section may comprise the auxiliary electrode.

[0133] In some non-limiting examples, the lower section may comprise a material of which the PDL is comprised.

[0134] In some non-limiting examples, the lower section may comprise a photoresist material.

[0135] In some non-limiting examples, the lower section may comprise a metallic material.

[0136] In some non-limiting examples, the metallic material may be titanium (Ti).

[0137] In some non-limiting examples, the lower section may pass through the PDL and a TFT insulating layer and is electrically coupled with an N-type TFT.

[0138] In some non-limiting examples, the first electrode of one of the at least one emissive regions may be a common anode and the second electrode of one of the at least one emissive regions may be an independent cathode.

[0139] In some non-limiting examples, the deposited layer may electrically couple the independent cathode with the lower section.

[0140] In some non-limiting examples, the lower section may be for detecting a touch on the conductive coating and may be electrically coupled with a touch control circuit below a frontplane of the device.

[0141] In some non-limiting examples, the upper section may comprise a photoresist material.

[0142] In some non-limiting examples, the upper section may comprise a material of which the lower section is comprised.

[0143] In some non-limiting examples, the device may further comprise a deposited layer of a conductive deposited material disposed in the sheltered region.

[0144] In some non-limiting examples, the deposited layer may electrically couple the second electrode of the at least one emissive region with the auxiliary electrode.

[0145] In some non-limiting examples, the deposited layer may electrically couple the second electrode of the at least one emissive region with the conductive coating.

[0146] In some non-limiting examples, the upper section may extend along the sidewall of the lower section.

[0147] In some non-limiting examples, the deposited layer may extend around a part of the upper section that extends laterally beyond the lower section.

[0148] In some non-limiting examples, the deposited layer may extend across a lower surface of the part of the upper section that extends laterally beyond the lower section.

[0149] In some non-limiting examples, the deposited layer may be in contact with a part of a sidewall of the lower section.DESCRIPTIONLayered Device

[0150] The present disclosure relates generally to layered semiconductor devices 200, and more specifically, to opto-electronic devices 300. An opto-electronic device 300 may generally encompass any device 200 that converts electrical signals into light in the form of photons and vice versa. In some non-limiting examples, the opto-electronic device 300 may be an organic light-emitting diode (OLED).

[0151] Those having ordinary skill in the relevant art will appreciate that, while the present disclosure is directed to opto-electronic devices 300, the principles thereof may, in some non-limiting examples, be applicable to any panel having a plurality of layers, including without limitation, at least one layer of conductive deposited material 731 , including as a thin film, and in some non-limiting examples, through which electromagnetic (EM) signals may pass, including without limitation, one of partially, and entirely, at a non-zero angle relative to a plane of at least one of the layers.

[0152] Turning now to FIG. 2, there may be shown a cross-sectional view of an example layered semiconductor device 200. In some non-limiting examples, as shown in greater detail in FIG.3, the device 200 may comprise a plurality of layers deposited upon a substrate 10.

[0153] In some non-limiting examples, a lateral axis, identified as the X-axis, may be shown, together with a longitudinal axis, identified as the Z-axis. A second lateral axis, identified as the Y-axis, may be shown as being substantially transverse to both the X-axis and the Z-axis. In some non-limiting examples, at least one of the lateral axes may define a lateral aspect of the device 200. In some non-limiting examples, the longitudinal axis may define a longitudinal aspect of the device 200.

[0154] In some non-limiting examples, the layers of the device 200 may extend, in the lateral aspect, substantially parallel to a plane defined by the lateral axes. Those having ordinary skill in the relevant art will appreciate that the substantially planar representation shown in FIG. 2 may be, in some non-limiting examples, an abstraction for purposes of illustration. In some non-limiting examples, there may be, across a lateral extent of the device 200, localized substantially planar strata of different thicknesses and dimension, including, in some non-limiting examples, the substantially complete absence of at least one layer separated by non-planar transition areas (including lateral gaps and even discontinuities).

[0155] Thus, while for illustrative purposes, the device 200 may be shown in its longitudinal aspect as a substantially stratified structure of substantially parallel planar layers, such device 200 may illustrate locally, a diverse topography to define features, each of which may substantially exhibit the stratified profile discussed in the longitudinal aspect.

[0156] In some non-limiting examples, a lateral aspect of an exposed layer surface 11 of the device 200 may comprise a first portion 201 and a second portion 202. In some nonlimiting examples, the second portion 202 may comprise that part of the exposed layer surface 11 of the device 200 that lies beyond the first portion 201.

[0157] As shown in FIG.2, the layers of the device 200 may comprise a substrate 10, and a patterning coating 210 disposed on an exposed layer surface 11 of at least a portion of the lateral aspect thereof. In some non-limiting examples, the patterning coating 210 may be disposed as a closed coating 240 on an exposed layer surface 11 of the device 200. In some non-limiting examples, the patterning coating 210 may be limited in its lateral extent to the first portion 201, and a deposited layer 230 may be disposed as a closed coating 240 on an exposed layer surface 11 of the device 200 in a second portion 202 of its lateral aspect.

[0158] In some non-limiting examples, at least one particle structure 250 may be disposed as a discontinuous layer 260 on (a part of) the exposed layer surface 11 of the patterning coating 210.

[0159] In some non-limiting examples, although not shown, at least one of: the patterning coating 210, the deposited layer 230, and at least one particle structure 250, may be deposited on a layer (underlying layer 1310) other than the substrate 10, including without limitation, an intervening layer between the substrate 10 and at least one of the: patterning coating 210, deposited layer 230, and at least one particle structure 250. In some non-limiting examples, the underlying layer 1310 may comprise at least one of an: orientation, and organic supporting, layer.

[0160] In some non-limiting examples, at least one of the: patterning coating 210, deposited layer 230, and at least one particle structure 250, may be covered by at least one overlying layer 270.

[0161] In some non-limiting examples, such overlying layer 270 may comprise at least one of an: encapsulation layer, and optical coating. In some non-limiting examples, the encapsulation layer may comprise at least one of: a glass cap, a barrier film, a barrier adhesive, a barrier coating, an encapsulation layer, and a thin film encapsulation (TFE) layer, provided to encapsulate the device 200. In some non-limiting examples, the optical coating may comprise (at least one component of) at least one of an: optical, and structural, coating, and at least one component thereof, including without limitation, a polarizer, a color filter, an anti-reflection coating, an anti-glare coating, cover glass, and an optically clear adhesive (OCA).

[0162] In some non-limiting examples, at least one of a: substantially thin patterning coating 210 in the first portion 201, and deposited layer 230 in the second portion 202, may provide a substantially planar surface on which the overlying layer 270 may be deposited. In some non-limiting examples, providing such a substantially planar surface for application of such overlying layer 270 may increase adhesion thereof to such surface.

[0163] In some non-limiting examples, the optical coating may be used to modulate optical properties of light being at least one of: transmitted, emitted, and absorbed, by the device 200, including without limitation, plasmon modes. In some non-limiting examples, theoptical coating may be used as at least one of (a part of): an optical filter, an index-matching coating, an optical outcoupling coating, a scattering layer, and a diffraction grating.

[0164] In some non-limiting examples, the optical coating may be used to modulate at least one optical microcavity effect in the device 200 by, without limitation, tuning at least one of the: total optical path length, and refractive index thereof. At least one optical property of the device 200 may be affected by modulating at least one optical microcavity effect including without limitation, the output light, including without limitation, at least one of: an angular dependence of an intensity thereof, and a wavelength shift thereof. In some non-limiting examples, the optical coating may be a non-electrical component, that is, the optical coating may not be configured to at least one of: conduct, and transmit, electrical current during normal device operations.

[0165] In some non-limiting examples, the optical coating may be formed of any deposited material 731 , and in some non-limiting examples, may employ any mechanism of depositing a deposited layer 230 as described herein.Opto-Electronic DeviceSubstrate

[0166] Turning now to FIG. 3, in some non-limiting examples, the substrate 10 may comprise a base substrate 315 upon which a frontplane 301, comprising a plurality of layers, respectively, may be deposited.

[0167] In some non-limiting examples, the base substrate 315 may be formed of material suitable for use thereof, including without limitation, at least one of: an inorganic material, including without limitation, at least one of: Si, glass, metal (including without limitation, a metal foil), sapphire, and other inorganic material, and an organic material, including without limitation, a polymer, including without limitation, at least one of: a polyimide, and an Si-based polymer. In some non-limiting examples, the base substrate 315 may be one of: rigid, and flexible. In some non-limiting examples, the substrate 10 may be defined by at least one planar surface. In some non-limiting examples, the substrate 10 may have at least one exposed layer surface 11 that supports the remaining frontplane 301components of the device 300, including without limitation, at least one of: the first electrode 320, the at least one semiconducting layer 330, and the second electrode 340.

[0168] In some non-limiting examples, such surface may be at least one of an: organic, and inorganic, surface.

[0169] In some non-limiting examples, the substrate 10 may comprise, in addition to the base substrate 315, at least one additional (in)organic, layer (not shown nor specifically described herein) supported on an exposed layer surface 11 of the base substrate 315.

[0170] In some non-limiting examples, such additional layers may comprise, at least one organic layer, which may at least one of: comprise, replace, and supplement, at least one of the semiconducting layers 330.

[0171] In some non-limiting examples, such additional layers may comprise at least one inorganic layer, which may comprise, at least one electrode 320, 340, 550, which in some nonlimiting examples, may at least one of: comprise, replace, and supplement, at least one of: the first electrode 320, and the second electrode 340.Backplane and TFT structure! s) embodied therein

[0172] In some non-limiting examples, such additional layers may comprise a backplane 302. In some non-limiting examples, the backplane 302 may comprise at least one of: power circuitry, and switching elements for driving the device 300, including without limitation, at least one (component of an) electronic thin-film transistor (TFT) structure 306, that may be formed by a photolithography process.

[0173] In some non-limiting examples, the backplane 302 of the substrate 10 may comprise at least one electronic, including without limitation, an opto-electronic component, including without limitation, one of: transistors, resistors, and capacitors, which may support the device 300 acting as one of: an active-matrix, and a passive matrix, device 300. In some non-limiting examples, such structures may be a TFT structure 306, including without limitation, one of: top-gate, bottom-gate, n-type and p-type TFT structures 306. In some nonlimiting examples, the TFT structure 306 may incorporate one of: amorphous silicon (Si) (a-Si), indium gallium zinc oxide (IGZO), and low-temperature poly crystalline Si (LTPS).First Electrode

[0174] The first electrode 320 may be deposited over the substrate 10. In some nonlimiting examples, the first electrode 320 may be electrically coupled with at least one of: a terminal 120, and a negative terminal 160, including without limitation, ground, of the power source 304. In some non-limiting examples, the first electrode 320 may be so coupled through at least one driving circuit 100, which in some non-limiting examples, may incorporate at least one TFT structure 306 in the backplane 302 of the substrate 10.

[0175] In some non-limiting examples, the first electrode 320 may comprise one of: an anode 150, and cathode 130. In some non-limiting examples, the first electrode 320 may be an anode 150.

[0176] In some non-limiting examples, the first electrode 320 may be formed by depositing at least one thin conductive film, over (a part of) the substrate 10. In some nonlimiting examples, there may be a plurality of first electrodes 320, disposed in a spatial arrangement over a lateral aspect of the substrate 10. In some non-limiting examples, at least one of such at least one first electrodes 320 may be deposited over (a part of) a TFT insulating layer 307 disposed in a lateral aspect in a spatial arrangement. If so, in some non-limiting examples, at least one of such at least one first electrodes 320 may extend through an opening of the corresponding TFT insulating layer 307 to be electrically coupled with an electrode of the TFT structures 306 in the backplane 302.

[0177] In some non-limiting examples, at least one of: the at least one first electrode 320, and at least one thin film thereof, may comprise various materials, including without limitation, at least one metallic material, including without limitation, at least one of: magnesium (Mg), aluminum (Al), calcium (Ca), zinc (Zn), silver (Ag), cadmium (Cd), barium (Ba), and ytterbium (Yb), including without limitation, alloys comprising any of such materials, at least one metal oxide, including without limitation, a TCO, including without limitation, ternary compositions such as, without limitation, at least one of: FTO, IZO, and ITO, in varying proportions, including without limitation, combinations of any plurality thereof in at least one layer, any at least one of which may be, without limitation, a thin film.Second Electrode

[0178] The second electrode 340 may be deposited over the at least one semiconducting layer 330. In some non-limiting examples, the second electrode 340 may be electrically coupled with at least one of: a terminal 120, and a negative terminal 160, including without limitation, ground, of the power source 304. In some non-limiting examples, the second electrode 340 may be so coupled through at least one driving circuit 100, which in some nonlimiting examples, may incorporate at least one TFT structure 306 in the backplane 302 of the substrate 10.

[0179] In some non-limiting examples, the second electrode 340 may comprise one of: an anode 150, and a cathode 130. In some non-limiting examples, the second electrode 340 may be a cathode 130.

[0180] In some non-limiting examples, the second electrode 340 may be formed by depositing a deposited layer 230, in some non-limiting examples, as at least one thin film, over (a part of) the at least one semiconducting layer 330.

[0181] In some non-limiting examples, there may be a plurality of second electrodes 340, disposed in a spatial arrangement over a lateral aspect of the at least one semiconducting layer 330.

[0182] In some non-limiting examples, the second electrode 340 may extend partially over the patterning coating 210 in a transition region 345.

[0183] In some non-limiting examples, the at least one second electrode 340 may comprise various materials, including without limitation, at least one metallic material, including without limitation, at least one of: Mg, Al, Ca, Zn, Ag, Cd, Ba, and Yb, including without limitation, alloys comprising at least one of: any of such materials, at least one metal oxide, including without limitation, a TCO, including without limitation, ternary compositions such as, without limitation, at least one of: FTO, IZO, and ITO, including without limitation, in varying proportions, zinc oxide (ZnO), and other oxides comprising at least one of: In, and Zn, in at least one layer, and at least one non-metallic material, any of which may be, without limitation, a thin conductive film. In some non-limiting examples, for a Mg:Ag alloy, such alloy composition may range between about 1: 9-9:1 by volume.

[0184] In some non-limiting examples, the deposition of the second electrode 340 may be performed using one of: an open mask, and a mask-free deposition process.

[0185] In some non-limiting examples, the second electrode 340 may comprise a plurality of such coatings. In some non-limiting examples, such coatings may be distinct coatings disposed on top of one another.

[0186] In some non-limiting examples, the second electrode 340 may comprise a Yb / Ag bi-layer coating. In some non-limiting examples, such bi-layer coating may be formed by depositing a Yb coating, followed by an Ag coating. In some non-limiting examples, a thickness of such Ag coating may be at least that of a thickness of the Yb coating.

[0187] In some non-limiting examples, the second electrode 340 may be a multi-coating electrode 340 comprising a plurality of one of: a metallic coating, and an oxide coating.

[0188] In some non-limiting examples, the second electrode 340 may comprise a fullerene and Mg.

[0189] In some non-limiting examples, such coating may be formed by depositing a fullerene coating followed by an Mg coating. In some non-limiting examples, a fullerene may be dispersed within the Mg coating to form a fullerene-containing Mg alloy coating. Nonlimiting examples of such coatings are described in at least one of: United States Patent Application Publication No. 2015 / 0287846 published 8 October 2015, and in PCT International Application No. PCT / IB2017 / 054970 filed 15 August 2017 and published as W02018 / 033860 on 22 February 2018.Semiconducting layer

[0190] In some non-limiting examples, the at least one semiconducting layer 330 may comprise a plurality of layers 331, 333, 335, 337, 339, any of which may be disposed, in some non-limiting examples, in a thin film, in a stacked configuration, which may include, without limitation, at least one of: a hole injection layer (HIL) 331, an HTL 333, an emissive layer (EML) 335, an ETL 337, and an electron injection layer (EIL) 339.

[0191] In some non-limiting examples, the at least one semiconducting layer 330 may form a “tandem” structure comprising a plurality of EMLs 335. In some non-limiting examples, such tandem structure may also comprise at least one charge generation layer (CGL).

[0192] Those having ordinary skill in the relevant art will readily appreciate that the structure of the device 300 may be varied by one of: omitting, and combining, at least one of the semiconducting layers 331, 333, 335, 337, 339.

[0193] In some non-limiting examples, any of the layers 331, 333, 335, 337, 339 of the at least one semiconducting layer 330 may comprise any number of sub-layers. In some nonlimiting examples, any of such layers 331, 333, 335, 337, 339, including without limitation, sub-layer(s) thereof may comprise various ones of a: mixture, and composition, gradient. In some non-limiting examples, although not shown, the device 300 may comprise at least one layer comprising one of an: inorganic, and organometallic, material, and may not be necessarily limited to devices 300 comprised solely of organic materials. By way of non-limiting example, the device 300 may comprise at least one quantum dot (QD).

[0194] In some non-limiting examples, the HIL 331 may be formed using a hole injection material, which may, in some non-limiting examples, facilitate injection of holes by the anode.

[0195] In some non-limiting examples, the HTL 333 may be formed using a hole transport material, which may, in some non-limiting examples, exhibit high hole mobility.

[0196] In some non-limiting examples, the ETL 337 may be formed using an electron transport material, which may, in some non-limiting examples, exhibit high electron mobility.

[0197] In some non-limiting examples, the EIL 339 may be formed using an electron injection material, which may, in some non-limiting examples, facilitate injection of electrons by the cathode.

[0198] In some non-limiting examples, the at least one EML 335 may be formed, in some non-limiting examples, by doping a host material with at least one emitter material. In some non-limiting examples, the emitter material may be at least one of a: fluorescent, phosphorescent, and thermally activated delayed fluorescence (TADF), emitter material.

[0199] In some non-limiting examples, the emitter material may be one of a: R(ed), G(reen), and B(lue), emitter material, that is, an emitter material that facilitates the emission of respectively: R(ed), G(reen), and B(lue), light.

[0200] In some non-limiting examples, the device 300 may be an OLED, in which the at least one semiconducting layer 330 may comprise at least one EML 335 interposed between conductive thin film electrodes 320, 340, whereby, when a potential difference is applied across them, holes may be injected into the at least one semiconducting layer 330 through the anode 150 and electrons may be injected into the at least one semiconducting layer 330 through the cathode 130, to migrate toward the at least one EML 335 and combine to emit light in the form of photons.

[0201] In some non-limiting examples, the device 300 may be an electro-luminescent QD device 300 in which the at least one semiconducting layer 330 may comprise an active layer comprising at least one QD. When current is provided by the power source 304 to the first electrode 320 and second electrode 340, light, including without limitation, in the form of photons, may be emitted from the active layer comprising the at least one semiconducting layer 330 between them.

[0202] In some non-limiting examples, including where the device 300 comprises a lighting panel, an entire lateral aspect of the device 300 may correspond to a single emissive element. As such, the substantially planar cross-sectional profile shown in FIG.3 may extend substantially along the entire lateral aspect of the device 300, such that light is emitted from the device 300 substantially along the entirety of the lateral extent thereof. In some non-limiting examples, such single emissive element may be driven by a single driving circuit 100 of the device 300.

[0203] In some non-limiting examples, including where the device 300 comprises a display module, the lateral aspect of the device 300 may be sub-divided into a plurality of emissive regions 310 thereof, in which the longitudinal aspect of the structure thereof, within each of the emissive region(s) 310, may cause light to be emitted therefrom when energized.

[0204] Those having ordinary skill in the relevant art will readily appreciate that the structure of the device 300 may be varied by the introduction of at least one additional layer(not shown) at appropriate position(s) within the at least one semiconducting layer 330 stack, including without limitation, at least one of: a hole blocking layer (HBL) (not shown), an electron blocking layer (EBL) (not shown), a charge transport layer (CTL) (not shown), and a charge injection layer (CIL) (not shown).

[0205] In some non-limiting examples, the patterning coating 210 may be formed concurrently with the at least one semiconducting layer(s) 330. In some non-limiting examples, at least one material used to form the patterning coating 210 may also be used to form the at least one semiconducting layer(s) 330. In some non-limiting examples, the ETL 337 of the at least one semiconducting layer 330 may be a patterning coating 210 that may be deposited in the first portion 201 and the second portion 202 during the deposition of the at least one semiconducting layer 330. The EIL 339 may then be selectively deposited in the emissive region 310 of the second portion 202 over the ETL 337, such that the exposed layer surface 11 of the ETL 337 in the first portion 201 may be substantially devoid of the EIL 339. The exposed layer surface 11 of the EIL 339 in the emissive region 310 and the exposed layer surface of the ETL 337, which acts as the patterning coating 210, may then be exposed to a vapor flux 732 of the deposited material 731 to form a closed coating 240 of the deposited layer 230 on the EIL 339 in the second portion 202, and a discontinuous layer 260 of the deposited material 731 on the ETL 337 in the first portion 201. In such non-limiting example, several stages for fabricating the device 300 may be reduced.Emissive Region(s)

[0206] A simplified block diagram from a longitudinal aspect, of an emissive region 310, corresponding to a (sub-) pixel 415 / 316 of an example opto-electronic device 300, which may be, in some non-limiting examples, an electro-luminescent device 300, including without limitation, an OLED, according to the present disclosure is shown in FIG. 3, surrounded by at least one non-emissive region 311.

[0207] Within the emissive region 310, the device 300 may comprise a substrate 10, a first electrode 320, at least one semiconducting layer 330, and a second electrode 340, disposed as various layers of the frontplane 301. In some non-limiting examples, the frontplane 301 may provide mechanisms for emission of light, including without limitation, photons.

[0208] In some non-limiting examples, various coatings of such devices 300 may be formed by vacuum-based deposition processes.

[0209] In some non-limiting examples, the first electrode 320 and the second electrode 340 of an emissive region 310 of the device 300 may be electrically coupled with a power source 304. When so coupled, the emissive region 310 may emit light, including without limitation, photons, as described herein.

[0210] In some non-limiting examples, the lateral aspect of the device 300 may be subdivided into a plurality of emissive regions 310 of the device 300, in which the longitudinal aspect of the device 300 structure, within each of the emissive region(s) 310, may cause light to be emitted therefrom when energized.

[0211] In some non-limiting examples, an individual emissive region 310 may have an associated pair of electrodes 320, 340, one of which may act as an anode 150 and the other of which may act as a cathode 130, and at least one semiconducting layer 330 between them. Such an emissive region 310 may emit light at a given wavelength spectrum and may correspond to one of: a pixel 415, and a sub-pixel 316 thereof. In some non-limiting examples, a plurality of sub-pixels 316, each corresponding to and emitting light of a different wavelength (range) may collectively form a pixel 415.

[0212] In some non-limiting examples, the wavelength spectrum may correspond to a colour in, without limitation, the visible spectrum. The light at a first wavelength (range) emitted by a first sub-pixel 316 of a pixel 415 may perform differently than the light at a second wavelength (range) emitted by a second sub-pixel 316 thereof because of the different wavelength (range) involved.

[0213] In some non-limiting examples, an active region 308 of an individual emissive region 310 may be defined to be bounded, in the longitudinal aspect, by the first electrode 320 and the second electrode 340, and to be confined, in the lateral aspect, to an emissive region 310, defined by presence of each of the: first electrode 320, second electrode 340, and at least one semiconducting layer 330 therebetween (“emissive region layers”), that is, the first electrode 320, the second electrode 340, and the at least one semiconducting layer 330 therebetween, overlap laterally.

[0214] Those having ordinary skill in the relevant art will appreciate that the lateral aspect of the emissive region 310, and thus the lateral boundaries of the active region 308, may not correspond to the entire lateral aspect of at least one of the: first electrode 320, second electrode 340, and at least one semiconducting layer 330 therebetween. Rather, as the at least one semiconducting layer 330 may, in some non-limiting examples, extend at least beyond the lateral aspect of at least one of the first electrode 320, and the second electrode 340, the lateral aspect of the emissive region 310 may be substantially no more than the lateral extent of either of the: first electrode 320, and second electrode 340. In some non-limiting examples, at least one of: parts of the first electrode 320 may be covered by at least one pixel definition layer PDL 309, and parts of the second electrode 340 may not be disposed on the at least one semiconducting layer 330, with the result, in at least one scenario, that the emissive region 310 may be laterally constrained thereby.

[0215] In some non-limiting examples, at least one of the various emissive region layers may be deposited by deposition of a corresponding constituent emissive region layer material.

[0216] In some non-limiting examples, some of the at least one semiconducting layers 330 may be laid out in a desired pattern by vapor deposition of the corresponding emissive region layer material through a fine metal mask (FMM) having apertures corresponding to the desired locations where the emissive region layer material is to be deposited. In some nonlimiting examples, a plurality of the emissive region layers may be laid out in a similar pattern, including without limitation, by depositing the respective emissive region layer material thereof in their respective deposition stages using an FMM.

[0217] In some non-limiting examples, the first electrode 320 may be disposed over an exposed layer surface 11 of the device 300, in some non-limiting examples, within at least a part of the lateral aspect of the emissive region 310. In some non-limiting examples, at least within the lateral aspect of the emissive region 310 of the (sub-) pixel(s) 415 / 316, the exposed layer surface 11, may, at the time of deposition of the first electrode 320, comprise the TFT insulating layer 307 of the various TFT structures 306 that make up the driving circuit 100 for the emissive region 310 corresponding to a single display (sub-) pixel 415 / 316.

[0218] In some non-limiting examples, the TFT insulating layer 307 may be formed with an opening extending therethrough to permit the first electrode 320 to be electrically coupled with a TFT electrode including, without limitation, a TFT drain electrode.

[0219] Those having ordinary skill in the relevant art will appreciate that the driving circuit 100 may comprise a plurality of TFT structures 306. In FIG.3, for purposes of simplicity of illustration, only one TFT structure 306 may be shown, but it will be appreciated by those having ordinary skill in the relevant art, that such TFT structure 306 may be representative of at least one of: such plurality thereof, and at least one component thereof, that comprise the driving circuit 100.

[0220] In some non-limiting examples, an extremity of the first electrode 320 may be covered by at least one PDL 309 such that a part of the at least one PDL 309 may be interposed between the first electrode 320 and the at least one semiconducting layer 330, such that such extremity of the first electrode 320 may lie beyond the active region 308 of the associated emissive region 310.

[0221] In some non-limiting examples, part(s) of the second electrode 340 may not be disposed directly on the at least one semiconducting layer 330, such that the emissive region 310 may be laterally constrained thereby.

[0222] In some non-limiting examples, the at least one semiconducting layer 330 (including without limitation, at least one of: layers 331, 333, 335, 337, 339 thereof) may be deposited over the exposed layer surface 11 of the device 300, including at least a part of the lateral aspect of such emissive region 310 of the (sub-) pixel(s) 415 / 316. In some non-limiting examples, at least within the lateral aspect of the emissive region 310 of the (sub-) pixel(s) 415 / 316, such exposed layer surface 11, may, at the time of deposition of such at least one semiconducting layer 330 comprise the first electrode 320.

[0223] In some non-limiting examples, the at least one semiconducting layer 330 may extend beyond the lateral aspect of the emissive region 310 of the (sub-) pixel(s) 415 / 316 and at least partially within the lateral aspects of the surrounding non-emissive region(s) 311. In some non-limiting examples, such exposed layer surface 11 of such surrounding non-emissiveregion(s) 311 may, at the time of deposition of the at least one semiconducting layer 330, comprise the PDL(s) 309.

[0224] In some non-limiting examples, the second electrode 340 may be disposed over an exposed layer surface 11 of the device 300, including at least a part of the lateral aspect of the emissive region 310 of the (sub-) pixel(s) 415 / 316. In some non-limiting examples, at least within the lateral aspect of the emissive region 310 of the (sub-) pixel(s) 415 / 316, such exposed layer surface 11, may, at the time of deposition of the second electrode 320, comprise the at least one semiconducting layer 330.

[0225] In some non-limiting examples, the second electrode 340 may extend beyond the lateral aspect of the emissive region 310 of the (sub-) pixel(s) 415 / 316 and at least partially within the lateral aspects of the surrounding non-emissive region(s) 311. In some non-limiting examples, an exposed layer surface 11 of such surrounding non-emissive region(s) 311 may, at the time of deposition of the second electrode 340, comprise the PDL(s) 309.

[0226] In some non-limiting examples, the second electrode 340 may extend throughout a substantial part, including without limitation, substantially all, of the lateral aspects of the surrounding non-emissive region(s) 311.

[0227] In some non-limiting examples, each individual emissive region 310 of the device 300 may be associated with, and driven by, a corresponding driving circuit 100 within the backplane 302 of the device 300, for driving an OLED structure for the associated emissive region 310. In some non-limiting examples, including without limitation, where the emissive regions 310 may be laid out in a regular pattern extending in both a first (row) lateral direction and a second (column) lateral direction, there may be a signal line in the backplane 302, corresponding to each row of emissive regions 310 extending in the first lateral direction and a signal line, corresponding to each column of emissive regions 310 extending in the second lateral direction. In some non-limiting examples, a signal on a row selection line may energize the respective gates of the switching TFT structure(s) 306 electrically coupled therewith and a signal on a data line may energize the respective sources of the switching TFT structure(s) 306 electrically coupled therewith, such that a signal on a row selection line / data line pair may electrically couple and energise an electrode, by the positive terminal 120 of the power source 304, the anode 150 of the OLED structure of the emissive region 310 associated with such pair,causing the emission of a photon therefrom, the cathode 130 thereof being electrically coupled with a negative terminal 160, including without limitation, ground, of the power source 304.

[0228] In some non-limiting examples, including without limitation, where the device 300 is a top-emission OLED device used in devices of substantially small size, including without limitation, mobile devices such as smartphones and tablets, the driver TFT structure 306 (and in some non-limiting examples, the switching TFT structure(s) 306) thereof may employ P-type TFTs 306 configured in a constant-current circuit such as may be seen, without limitation, in FIG. IB, such that the electrode that is energized by the positive terminal 120 of the power source 304 is the anode 150, the cathode 130 being electrically coupled with the negative terminal 160, including without limitation, ground, of the power source 304.

[0229] In some non-limiting examples, including without limitation, where the device 300 is a top-emission OLED device used in devices of substantially large size, including without limitation, computer and video displays, the driver TFT structure 306 (and in some non-limiting examples, the switching TFT structure(s) 306) thereof may employ N-type TFTs 306 configured in a constant- current circuit such as may be seen, without limitation, in FIG. ID, such that the electrode that is energized by the positive terminal 120 of the power source 304 is the cathode 130, the anode 150 being electrically coupled with the negative terminal 160, including without limitation, ground, of the power source 304.

[0230] In some non-limiting examples, a single display pixel 415 may comprise three sub-pixels 316, which in some non-limiting examples, may correspond respectively to a single sub-pixel 316 of each of three colours, including without limitation, at least one of a: R(ed) sub-pixel 316R, G(reen) sub-pixel 316G, and B(lue) sub-pixel 316B. In some non-limiting examples, a single display pixel 415 may comprise four sub-pixels 316, each corresponding respectively to a single sub-pixel 316 of each of two colours, including without limitation, a R(ed) sub-pixel 316R, and a B(lue) sub-pixel 316B, and two sub-pixels 316 of a third colour, including without limitation, a G(reen) sub-pixel 316G. In some non-limiting examples, a single display pixel 415 may comprise four sub-pixels 316, which in some non-limiting examples, may correspond respectively to a single sub-pixel 316 of each of three colours, including without limitation, at least one of a: R(ed) sub-pixel 316R, G(reen) sub-pixel 316G, and B(lue) sub-pixel 316B, and a fourth W(hite) sub-pixel 316w.Non-Emissive Regions

[0231] In some non-limiting examples, the various emissive regions 310 of the device 300 may be substantially surrounded and separated by, in at least one lateral direction, at least one non-emissive region 311, in which at least one of the: structure, and configuration, along the longitudinal aspect, of the device 300 shown, without limitation, may be varied, to substantially inhibit light to be emitted therefrom.

[0232] In some non-limiting examples, the non-emissive regions 311 may comprise those regions in the lateral aspect, that are substantially devoid of an emissive region 310.

[0233] In some non-limiting examples, the longitudinal topology of the various layers of the at least one semiconducting layer 330 may be varied to define at least one emissive region 310, surrounded (at least in one lateral direction) by at least one non-emissive region 311.

[0234] In some non-limiting examples, the emissive region 310 corresponding to a single display (sub-) pixel 415 / 316 may be understood to have a lateral aspect, surrounded in at least one lateral direction by at least one non-emissive region 311.

[0235] A non-limiting example of an implementation of the longitudinal aspect of the device 300 as applied to an emissive region 310 corresponding to a single display (sub-) pixel 415 / 316 of the device 300 will now be described. While features of such implementation are shown to be specific to the emissive region 310, those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, more than one emissive region 310 may encompass features in common.

[0236] In some non-limiting examples, the lateral aspects of the surrounding non-emissive region(s) 311 may be characterized by the presence of a corresponding PDL 309.

[0237] In some non-limiting examples, a thickness of the PDL 309 may increase from a minimum, where it covers the extremity of the first electrode 320, to a maximum beyond the lateral extent of the first electrode 320. In some non-limiting examples, the change in thickness of the at least one PDL 309 may define a valley shape centered about the emissive region 310.In some non-limiting examples, the valley shape may constrain the field of view (FOV) of the light emitted by the emissive region 310.

[0238] While the PDL(s) 309 have been generally illustrated herein as having a linearly-sloped surface to form a valley-shaped configuration that define the emissive region(s) 310 surrounded thereby, those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, at least one of a: shape, aspect ratio, thickness, width, and configuration, of such PDL(s) 309 may be varied. In some non-limiting examples, a PDL 309 may be formed with one of a: substantially steep, and more gradually sloped, part. In some non-limiting examples, such PDL(s) 309 may be configured to extend substantially normally away from a surface on which it is deposited, that may cover at least one edge of the first electrode 320.Increasing Aperture Ratio of Emissive Regions

[0239] In some non-limiting examples, a process for manufacturing an opto-electronic device 300 may involve deposition, by a photolithography process, on a substrate 10, of underlying components of the backplane 302, including without limitation, at least one of: power circuitry, and switching elements, including without limitation, at least one (component of) a TFT structure 306, a TFT insulating layer 307, a buffer layer 1117 (FIG. 11B), a gate insulating layer 1118 (FIG. 11B), an interlayer insulating layer 1119 (FIG. 11B), and at least one conductive metal line coupled with the at least one TFT structure 306, and the first electrode 320 for each emissive region 310 of each (sub-) pixel 415 / 316, and the PDL(s) 309 covering extremities thereof may be formed thereon.

[0240] Thereafter, in some non-limiting examples, some of the at least one semiconducting layers 330 may be laid out in a desired pattern by vapor deposition of the corresponding emissive region layer material through an FMM having apertures corresponding to locations where the emissive region layer material is to be deposited. In some non-limiting examples, a plurality of the emissive region layers, including without limitation, each corresponding to a colour of a (sub-) pixel 415 / 316, may be laid out in a similar pattern, including without limitation, by depositing a respective emissive region layer material thereof in their respective deposition stages using respective FMMs.

[0241] Finally, the second electrodes 340 for each emissive region 310 of each (sub-) pixel 415 / 316 may be deposited. In some non-limiting examples, the selective deposition of a conductive deposited material 731 to form the second electrodes 340 may employ at least one FMM. In some non-limiting examples, the selective deposition of the deposited material 731 may be performed in one of: an open mask, and a mask-free, deposition process by the prior selective deposition of a patterning coating 210, including without limitation, using at least one FMM therefor.

[0242] In some non-limiting examples, a maximum aperture ratio of the emissive regions 310 in an opto-electronic device 300 may be constrained by the use of an FMM in the manufacturing process thereof, including without limitation, deposition of at least one of the: at least one semiconducting layer 330, and second electrode 340, of a (sub-) pixel 415 / 316 associated therewith, since, in some non-limiting examples, at the time of writing, limitations on at least one of: mechanical (including, without limitation, tensile) strength, and shadowing effects, of the FMM, including without limitation, in a high-temperature metal deposition process, may impart a constraint on an effective resolution of an FMM to be on the order of substantially about 3 pm. Additionally, in some non-limiting examples:• when used to produce repeating structures spread across an entire surface of an optoelectronic device 300, an FMM may be configured with a large number of apertures formed therein, which may, in some non-limiting examples, compromise a structural integrity thereof;• since each part of an FMM may be physically supported, some deposition patterns may not be achievable in a single processing stage, including without limitation, where a pattern specifies an isolated feature;• an FMM may exhibit a tendency to warp during a high-temperature metal deposition process, which may, in some non-limiting examples, distort the shape and position of apertures therein, and irrespective of such distortion, repeated use of such FMM in successive depositions, including without limitation, during such a deposition process, may obfuscate features of the FMM, which may cause a deposition pattern of such FMM to change over time, with an attendant degradation in at least one of: performance, and yield;• while an FMM may be cleaned from time to time to remove non-metallic material adhered thereto, such cleaning procedures may have reduced applicability for use with metal that is adhered thereto, and irrespective of the applicability of any such cleaning procedures, continued cycles of: use, and cleaning, of the FMM, including without limitation, in a high-temperature deposition process, may progressively render it ineffective at producing a particular deposition pattern, at which point the FMM may be one of: discarded, and replaced, with attendant increase in at least one of manufacturing: complexity, and expense.Laver discontinuity

[0243] In some non-limiting examples, approaches to the manufacturing of optoelectronic devices 300 that dispense with the use of an FMM therein, may substantially increase an available aperture ratio of the emissive regions 310 thereof.

[0244] One such approach being considered is the proposed “environment positive, Lithography with maskless deposition, Extreme long life, low power, and high luminance Any shape Patterning” (eLEAP) next generation OLED manufacturing approach, which may achieve an aperture ratio of at least about 60%, that may be at least that of what is achievable using conventional FMM RGB deposition processes, and may, in some non-limiting examples, be employed in current 6thgeneration substrate lines (of substantially about 1850 mm in length x 1500 mm in width), which in some non-limiting examples, may be used to manufacture OLED panels for smartphones, as well as being scaled up to be employed in 8thgeneration substrate lines (of substantially about 2500 mm in length x 200 mm in width), which may accommodate at least one of: an increased number of smartphone panels per substrate, and production of larger displays including without limitation, for tablets, notebooks, and monitors, on a more efficient and economical basis, including without limitation, within a common manufacturing process.

[0245] In some non-limiting examples, the 8thgeneration substrate lines may employ N-type TFT structures 306, as opposed to the P-type TFT structures 306 that may be employed in current 6thgeneration substrate lines.

[0246] Such increase in aperture ratio may be achievable by avoiding the registration restrictions imposed by a conventional FMM deposition process. In some non-limitingexamples, shadowing effects in a conventional FMM deposition process may contribute to a colour mixing issue that may be conventionally addressed by establishing a reserved inactive area between adjacent sub-pixels of different colours.

[0247] Accordingly, an increased proportion of the device area may be occupied by active pixel regions, concomitantly reducing a proportion of the device area that is inactive.

[0248] In some non-limiting examples, an increase in the aperture ratio may facilitate a reduction in current density that may increase at least one of: a device brightness, and an expected device lifetime.

[0249] In the eLEAP approach, the use of an FMM is dispensed with. Rather, after the first electrode 320, and the PDL(s) 309, for each emissive region 310 of each (sub-) pixel 415 / 316 have been deposited, at least one layer discontinuity 410 is introduced between a: first, and second, adjacent emissive region 310 to electrically isolate at least one of the: second electrode 340, and at least one semiconducting layer 330, of the first emissive region 310, from a corresponding at least one of the: second electrode 340, and at least one semiconducting layer 330, of the second emissive region 310.

[0250] In some non-limiting examples, such layer discontinuities 410 may minimize a likelihood that layers that may contribute to lateral current migration may be formed across a plurality of adjacent (sub-) pixels 415 / 316.

[0251] In some non-limiting examples, the presence of the at least one layer discontinuity 410 between adjacent (sub-) pixels 415 / 316 may reduce a likelihood of electrical cross-talk, including without limitation, by current leakage through any of the at least one semiconducting layers 330, including without limitation, the HTL 333, and ETL 337, which may, in some non-limiting examples, be deposited as common layers, between an active (sub-) pixel 415 / 316 and a (sub-) pixel 415 / 316 adjacent thereto

[0252] In some non-limiting examples, as shown by reference to FIG.4, the at least one layer discontinuity 410 may surround, at least partially, one of the at least one emissive regions 310 adjacent thereto (the adjacent emissive region 310). In some non-limiting examples, as shown, the at least one layer discontinuity 410 may surround, at least partially, the adjacent emissive region 310.

[0253] In some non-limiting examples, although not shown, the at least one layer discontinuity 410 may completely surround the adjacent emissive region 310.

[0254] In some non-limiting examples, as shown, the at least one layer discontinuity 410 may extend substantially in a constant direction.

[0255] In some non-limiting examples, as shown, the at least one layer discontinuity 410 may extend, at least partially, along a side of the adjacent emissive region 310. In some non-limiting examples, as shown, the at least one layer discontinuity 410 may extend substantially parallel to a side of the adjacent emissive region 310.

[0256] In some non-limiting examples, as shown, there may be at least one gap 411 between a plurality of layer discontinuities 410, such that the adjacent emissive region 310 is not completely surrounded thereby. In some non-limiting examples, as shown, the at least one gap 411 may extend in the lateral aspect.

[0257] In some non-limiting examples, as shown, the at least one gap 411 may be disposed proximate to a vertex of the adjacent emissive region 310.

[0258] In some non-limiting examples, as shown, including without limitation, along line 5A-5A, a pair of emissive regions 311 may surround a layer discontinuity 410. In some non-limiting examples, as shown, including without limitation, along lines 5B-5B, and 5E-5E, a pair of longitudinal discontinuities 410 may surround an adjacent emissive region 310. In some non-limiting examples, as shown, including without limitation, along line 5C-5C, a pair of longitudinal discontinuities 410 may surround a non-emissive region 311.

[0259] Turning now to FIG. 5A, there may be shown a cross-sectional view of an example version 500aof a fragment of the device 400 of FIG.4, taken along line 5A-5A, in which a layer discontinuity 410 is surrounded, along at least one lateral aspect, by an emissive region 310.

[0260] In some non-limiting examples, the device 500amay comprise a substrate 10 having an exposed layer surface 11. The substrate 10 may comprise at least one TFT structure 306. In some non-limiting examples, the at least one TFT structure 306 may be formed by depositing and patterning a series of thin films when fabricating the substrate 10, in some nonlimiting examples, as described herein.

[0261] In some non-limiting examples, the device 500amay comprise, in a lateral aspect, an emissive region 310 having an associated lateral aspect and at least one adjacent non-emissive region 311, each having an associated lateral aspect. In some non-limiting examples,the exposed layer surface 11 of the substrate 10 in the emissive region 310 may be provided with a first electrode 320, that may be electrically coupled with the at least one TFT structure 306. In some non-limiting examples, a PDL 309 may be provided on the exposed layer surface 11, such that the PDL 309 covers the exposed layer surface 11 as well as at least one of: an edge, and a perimeter, of the first electrode 320. The PDL 309 may, in some non-limiting examples, be provided in the lateral aspect of the non-emissive region 311. In some nonlimiting examples, the PDL 309 may define a valley-shaped configuration that may provide an opening that generally may correspond to the lateral aspect of the emissive region 310 through which a layer surface of the first electrode 320 may be exposed. In some non-limiting examples, the device 500amay comprise a plurality of such openings defined by the PDLs 309, each of which may correspond to a (sub-) pixel 415 / 316 region of the device 500a.

[0262] As shown, in some non-limiting examples, a layer discontinuity 410, in the form of an undercut partition structure, may be provided on the exposed layer surface 11 in the lateral aspect of a non-emissive region 311, and as described herein, may define a sheltered region 565, such as a recessed region 522. In some non-limiting examples, as shown, the recessed region 522 may be formed by an edge (of a sidewall) of a lower section 511 of the partition 410 being at least one of: recessed, staggered, and offset, with respect to an edge (of a sidewall) of an upper section 512 of the partition 410 that may project beyond the recessed region 522.

[0263] In some non-limiting examples, as shown, the lower section 511 of the partition 410 may be disposed proximate to an uppermost layer of the PDL 309.

[0264] In some non-limiting examples, as shown, a lowermost surface (bottom) of the lower section 511 of the partition 410 may be disposed below an uppermost layer of the PDL 309. In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed on an exposed layer surface 11 of an uppermost layer of the PDL 309.

[0265] In some non-limiting examples, as shown, the upper section 512 of the partition 410 may extend longitudinally above an uppermost layer of the PDL 309.

[0266] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may be disposed proximate to a lowermost layer of the PDL 309.

[0267] In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed below a lowermost layer of the PDL 309. In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed on an exposed layer surface 11 of an underlying layer on which the PDL 309 is also disposed.

[0268] In some non-limiting examples, although not shown, a longitudinal extent of an uppermost layer (top) of the upper section 512 of the partition 410 may be proximate to, including without limitation, substantially level to, an uppermost layer of the PDL 309.

[0269] In some non-limiting examples, as shown, the upper section 512 of the partition 410 may extend downward toward the substrate 10 on a side other than where the recessed region 522 lies. In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may be disposed on an exposed layer surface 11 on which the lower section 511 of the partition 410 may have been disposed on a side other than where the recessed region 522 lies.

[0270] In some non-limiting examples, although not shown, the partition 410 may exhibit a tapered profile in cross section in which a bottom of the lower section 511 of the partition 410 may be smaller than an uppermost surface (top) of the lower section 511 of the partition 410.

[0271] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that provides (at least in part) a substantially linearly tapered profile.

[0272] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that is (at least in part) substantially concave to provide (at least in part) a substantially curved tapered profile.

[0273] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that is (at least in part) substantially normal to a plane defined by the at least one lateral axes.

[0274] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that provides (at least in part) a substantially linearly tapered profile.

[0275] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that is (at least in part) substantially concave to provide (at least in part) a substantially curved tapered profile.

[0276] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that is (at least in part) substantially normal to a plane defined by the at least one lateral axes.

[0277] In some non-limiting examples, although not shown, a thickness of the lower section 511 of the partition 410 may be at least that of the upper section 512 of the partition 410.

[0278] In some non-limiting examples, although not shown, a thickness of the lower section 511 of the partition 410 may be no more than a thickness of the upper section 512 of the partition 410.

[0279] In some non-limiting examples, the lower section 511 of the partition 410 may comprise a photoresist material. In some non-limiting examples, the lower section 511 of the partition 410 may comprise a material substantially similar to a material of which the PDL 309 may be comprised.

[0280] In some non-limiting examples, the upper section 512 of the partition 410 may comprise a photoresist material. In some non-limiting examples, the upper section 512 of the partition 410 may comprise a material substantially similar to a material of which the PDL 309 may be comprised. In some non-limiting examples, the upper section 512 of the partition 410 may comprise a material substantially similar to a material of which the lower section 511 of the partition 410 may be comprised.

[0281] In some non-limiting examples, the lower section 511 of the partition 410 may comprise a material substantially similar to a material of which an auxiliary electrode 550 may be comprised.

[0282] In some non-limiting examples, as shown, the upper section 512 of the at least one partition 410 may extend laterally beyond the lower section 511 thereof on a plurality of sides thereof. In some non-limiting examples, as shown, the sides on which the upper section 512 of the at least one partition 410 extends laterally beyond the lower section 511 thereof may be proximate to, and face, an adjacent emissive region 310.

[0283] In some non-limiting examples, the lateral aspect of the emissive region 310 may comprise at least one emissive region semiconducting layer 330edisposed over the first electrode 320, and a second electrode 340 disposed over the at least one emissive region semiconducting layer 330e. In some non-limiting examples, the at least one emissive region semiconducting layer 330e, and the second electrode 340, may extend laterally to cover at least the lateral aspect of a part of at least one adjacent non-emissive region 311. In some nonlimiting examples, as shown, the at least one emissive region semiconducting layer 330e, and the second electrode 340 may be disposed on at least a part of at least one PDL 309. In some non-limiting examples, as shown, the at least one partition semiconducting layer 330p, and a conductive coating 540 comprising a material of which the second electrode 340 may be comprised, may be disposed on at least a part of the partition 420.

[0284] In some non-limiting examples, the interposition of the at least one partition 410 between adjacent emissive regions 310 may force a local discontinuity, including without limitation, in a longitudinal aspect, and a lateral aspect, in the at least one semiconducting layer 330 deposited.

[0285] In some non-limiting examples, as shown, an auxiliary electrode 550 may be disposed proximate to, including without limitation, within, the recessed region 522. In some non-limiting examples, as shown, the lower section 511 of the partition 410 may comprise the auxiliary electrode 550.

[0286] In some non-limiting examples, at least one of the: lateral aspect of the sheltered region 565, and longitudinal discontinuity, of the at least one partition 410 may impose a discontinuity between at least one of the: second electrode 340, and at least one emissive region semiconducting layer 330e, of one of the at least one emissive regions 310; with at least one of: a corresponding one of the: second electrode 340, and at least one emissive regionsemiconducting layer 330e, of another one of the at least one emissive region 310, an auxiliary electrode 550 proximate to the at least one partition 410, the conductive coating 540, and the at least one partition semiconducting layer 330p.

[0287] Turning now to FIG. 5B, there may be shown a cross-sectional view of an example version 500b of a fragment of the device 400 of FIG.4, taken along line 5B-5B, in which an emissive region 310 is surrounded, along at least one lateral aspect, by a layer discontinuity 410.

[0288] In some non-limiting examples, the device 500b may comprise a substrate 10 having an exposed layer surface 11. The substrate 10 may comprise at least one TFT structure 306. In some non-limiting examples, the at least one TFT structure 306 may be formed by depositing and patterning a series of thin films when fabricating the substrate 10, in some nonlimiting examples, as described herein.

[0289] In some non-limiting examples, the device 500b may comprise, in a lateral aspect, an emissive region 310 having an associated lateral aspect and at least one adjacent non-emissive region 311, each having an associated lateral aspect. In some non-limiting examples, the exposed layer surface 11 of the substrate 10 in the emissive region 310 may be provided with a first electrode 320, that may be electrically coupled with the at least one TFT structure 306. In some non-limiting examples, a PDL 309 may be provided on the exposed layer surface 11, such that the PDL 309 covers the exposed layer surface 11 as well as at least one of: an edge, and a perimeter, of the first electrode 320. The PDL 309 may, in some non-limiting examples, be provided in the lateral aspect of the non-emissive region 311. In some nonlimiting examples, the PDL 309 may define a valley-shaped configuration that may provide an opening that generally may correspond to the lateral aspect of the emissive region 310 through which a layer surface of the first electrode 320 may be exposed. In some non-limiting examples, the device 500b may comprise a plurality of such openings defined by the PDLs 309, each of which may correspond to a (sub-) pixel 415 / 316 region of the device 500b.

[0290] As shown, in some non-limiting examples, a layer discontinuity 410, in the form of an undercut partition structure, may be provided on the exposed layer surface 11 in the lateral aspect of a non-emissive region 311, and as described herein, may define a shelteredregion 565, such as a recessed region 522. In some non-limiting examples, as shown, the recessed region 522 may be formed by an edge (of a sidewall) of a lower section 511 of the partition 410 being at least one of: recessed, staggered, and offset, with respect to an edge (of a sidewall) of an upper section 512 of the partition 410 that may project beyond the recessed region 522.

[0291] In some non-limiting examples, as shown, the lower section 511 of the partition 410 may be disposed proximate to an uppermost layer of the PDL 309.

[0292] In some non-limiting examples, as shown, a lowermost surface (bottom) of the lower section 511 of the partition 410 may be disposed below an uppermost layer of the PDL 309. In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed on an exposed layer surface 11 of an uppermost layer of the PDL 309.

[0293] In some non-limiting examples, as shown, the upper section 512 of the partition 410 may extend longitudinally above an uppermost layer of the PDL 309.

[0294] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may be disposed proximate to a lowermost layer of the PDL 309.

[0295] In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed below a lowermost layer of the PDL 309. In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed on an exposed layer surface 11 of an underlying layer on which the PDL 309 is also disposed.

[0296] In some non-limiting examples, although not shown, a longitudinal extent of an uppermost surface (top) of the upper section 512 of the partition 410 may be proximate to, including without limitation, substantially level to, an uppermost layer of the PDL 309.

[0297] In some non-limiting examples, as shown, the upper section 512 of the partition 410 may extend downward toward the substrate 10 on a side other than where the recessed region 522 lies. In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may be disposed on an exposed layer surface 11 on which the lower section511 of the partition 410 may have been disposed on a side other than where the recessed region 522 lies.

[0298] In some non-limiting examples, although not shown, the partition 410 may exhibit a tapered profile in cross section in which a bottom of the lower section 511 of the partition 410 may be smaller than an uppermost surface (top) of the lower section 511 of the partition 410.

[0299] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that provides (at least in part) a substantially linearly tapered profile.

[0300] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that is (at least in part) substantially concave to provide (at least in part) a substantially curved tapered profile.

[0301] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that is (at least in part) substantially normal to a plane defined by the at least one lateral axes.

[0302] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that provides (at least in part) a substantially linearly tapered profile.

[0303] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that is (at least in part) substantially concave to provide (at least in part) a substantially curved tapered profile.

[0304] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that is (at least in part) substantially normal to a plane defined by the at least one lateral axes.

[0305] In some non-limiting examples, although not shown, a thickness of the lower section 511 of the partition 410 may be at least that of the upper section 512 of the partition 410.

[0306] In some non-limiting examples, although not shown, a thickness of the lower section 511 of the partition 410 may be no more than a thickness of the upper section 512 of the partition 410.

[0307] In some non-limiting examples, the lower section 511 of the partition 410 may comprise a photoresist material. In some non-limiting examples, the lower section 511 of the partition 410 may comprise a material substantially similar to a material of which the PDL 309 may be comprised.

[0308] In some non-limiting examples, the upper section 512 of the partition 410 may comprise a photoresist material. In some non-limiting examples, the upper section 512 of the partition 410 may comprise a material substantially similar to a material of which the PDL 309 may be comprised. In some non-limiting examples, the upper section 512 of the partition 410 may comprise a material substantially similar to a material of which the lower section 511 of the partition 410 may be comprised.

[0309] In some non-limiting examples, the lower section 511 of the partition 410 may comprise a material substantially similar to a material of which an auxiliary electrode 550 may be comprised.

[0310] In some non-limiting examples, as shown, there may be a partition 410 on one side of the adjacent emissive region 310 along at least one lateral axis, and there may be a partition 410 on an opposite side of the adjacent emissive region 310 along such lateral axis, such that the adjacent emissive region 310 is surrounded by the partitions 410 along such lateral axis.

[0311] In some non-limiting examples, as shown, the upper section 512 of the at least one partition 410 may extend laterally beyond the lower section 511 thereof on one side thereof. In some non-limiting examples, as shown, the side on which the upper section 512 of the at least one partition 410 extends laterally beyond the lower section 511 thereof may be proximate to, and face, the adjacent emissive region 310.

[0312] In some non-limiting examples, the lateral aspect of the emissive region 310 may comprise at least one emissive region semiconducting layer 330edisposed over the first electrode 320, and a second electrode 340 disposed over the at least one emissive region semiconducting layer 330e. In some non-limiting examples, the at least one emissive region semiconducting layer 330e, and the second electrode 340, may extend laterally to cover at least the lateral aspect of a part of at least one adjacent non-emissive region 311. In some non-limiting examples, as shown, the at least one emissive region semiconducting layer 330e, and the second electrode 340 may be disposed on at least a part of at least one PDL 309. In some non-limiting examples, as shown, the at least one partition semiconducting layer 330p, and a conductive coating 540 comprising a material of which the second electrode 340 may be comprised, may be disposed on at least a part of the partition 410.

[0313] In some non-limiting examples, the interposition of the at least one partition 410 between adjacent emissive regions 310 may force a local discontinuity, including without limitation, in a longitudinal aspect, and a lateral aspect, in the at least one semiconducting layer 330 deposited.

[0314] In some non-limiting examples, as shown, an auxiliary electrode 550 may be disposed proximate to, including without limitation, within, the recessed region 522. In some non-limiting examples, as shown, the lower section 511 of the partition 410 may comprise the auxiliary electrode 550.

[0315] In some non-limiting examples, as shown, the auxiliary electrode 550 may be disposed proximate to, including without limitation, adjacent to, the adjacent emissive region 310. In some non-limiting examples, as shown, the auxiliary electrode 550 may substantially surround the adjacent emissive region 310.

[0316] In some non-limiting examples, at least one of the: lateral aspect of the sheltered region 565, and longitudinal discontinuity, of the at least one partition 410 may impose a discontinuity between at least one of the: second electrode 340, and at least one emissive region semiconducting layer 330e, of one of the at least one emissive regions 310; with at least one of: a corresponding one of the: second electrode 340, and at least one emissive region semiconducting layer 330e, of another one of the at least one emissive region 310, an auxiliary electrode 550 proximate to the at least one partition 410, the conductive coating 540, and the at least one partition semiconducting layer 330p.

[0317] Turning now to FIG. 5C, there may be shown a cross-sectional view of an example version 500cof a fragment of the device 400 of FIG.4, taken along line 5C-5C, in which a non-emissive region 311 is surrounded, along at least one lateral aspect, by a layer discontinuity 410.

[0318] In some non-limiting examples, the device 500cmay comprise a substrate 10 having an exposed layer surface 11. The substrate 10 may comprise at least one TFT structure 306. In some non-limiting examples, the at least one TFT structure 306 may be formed by depositing and patterning a series of thin films when fabricating the substrate 10, in some nonlimiting examples, as described herein.

[0319] In some non-limiting examples, the device 500cmay comprise, in a lateral aspect, an emissive region 310 having an associated lateral aspect and at least one adjacent non-emissive region 311, each having an associated lateral aspect. In some non-limiting examples, the exposed layer surface 11 of the substrate 10 in the emissive region 310 may be provided with a first electrode 320, that may be electrically coupled with the at least one TFT structure 306. In some non-limiting examples, a PDL 309 may be provided on the exposed layer surface 11, such that the PDL 309 covers the exposed layer surface 11 as well as at least one of: an edge, and a perimeter, of the first electrode 320. The PDL 309 may, in some non-limiting examples, be provided in the lateral aspect of the non-emissive region 311. In some nonlimiting examples, the PDL 309 may define a valley-shaped configuration that may provide an opening that generally may correspond to the lateral aspect of the emissive region 310 through which a layer surface of the first electrode 320 may be exposed. In some non-limiting examples, the device 500cmay comprise a plurality of such openings defined by the PDLs 309, each of which may correspond to a (sub-) pixel 415 / 316 region of the device 500.

[0320] As shown, in some non-limiting examples, a layer discontinuity 410, in the form of an undercut partition structure, may be provided on the exposed layer surface 11 in the lateral aspect of a non-emissive region 311, and as described herein, may define a sheltered region 565, such as a recessed region 522. In some non-limiting examples, as shown, the recessed region 522 may be formed by an edge (of a sidewall) of a lower section 511 of the partition 410 being at least one of: recessed, staggered, and offset, with respect to an edge (of a sidewall) of an upper section 512 of the partition 410 that may project beyond the recessed region 522.

[0321] In some non-limiting examples, as shown, the lower section 511 of the partition 410 may be disposed proximate to an uppermost layer of the PDL 309.

[0322] In some non-limiting examples, as shown, a lowermost layer (bottom) of the lower section 511 of the partition 410 may be disposed below an uppermost layer of the PDL 309. In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed on an exposed layer surface 11 of an uppermost layer of the PDL 309.

[0323] In some non-limiting examples, as shown, the upper section 512 of the partition 410 may extend longitudinally above an uppermost layer of the PDL 309.

[0324] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may be disposed proximate to a lowermost layer of the PDL 309.

[0325] In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed below a lowermost layer of the PDL 309. In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed on an exposed layer surface 11 of an underlying layer on which the PDL 309 is also disposed.

[0326] In some non-limiting examples, although not shown, a longitudinal extent of an uppermost surface (top) of the upper section 512 of the partition 410 may be proximate to, including without limitation, substantially level to, an uppermost layer of the PDL 309.

[0327] In some non-limiting examples, as shown, the upper section 512 of the partition 410 may extend downward toward the substrate 10 on a side other than where the recessed region 522 lies. In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may be disposed on an exposed layer surface 11 on which the lower section 511 of the partition 410 may have been disposed on a side other than where the recessed region 522 lies.

[0328] In some non-limiting examples, although not shown, the partition 410 may exhibit a tapered profile in cross section in which a bottom of the lower section 511 of the partition 410 may be smaller than an uppermost surface (top) of the lower section 511 of the partition 410.

[0329] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that provides (at least in part) a substantially linearly tapered profile.

[0330] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that is (at least in part) substantially concave to provide (at least in part) a substantially curved tapered profile.

[0331] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that is (at least in part) substantially normal to a plane defined by the at least one lateral axes.

[0332] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that provides (at least in part) a substantially linearly tapered profile.

[0333] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that is (at least in part) substantially concave to provide (at least in part) a substantially curved tapered profile.

[0334] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that is (at least in part) substantially normal to a plane defined by the at least one lateral axes.

[0335] In some non-limiting examples, although not shown, a thickness 513 of the lower section 511 of the partition 410 may be at least that of the upper section 512 of the partition 410.

[0336] In some non-limiting examples, although not shown, a thickness 513 of the lower section 511 of the partition 410 may be no more than a thickness of the upper section 512 of the partition 410.

[0337] In some non-limiting examples, a separation between proximate ends of the respective upper sections 512 of the surrounding partitions 410 may be substantially about 18 pm.

[0338] In some non-limiting examples, a thickness 513 of the lower section 511 may be substantially about 400 nm.

[0339] In some non-limiting examples, a depth 514 of the sheltered region 565 may be substantially about 200 nm.

[0340] In some non-limiting examples, at least one of the: second electrode 340, and conductive coating 540 disposed on at least a part of the partition 410, may have an average layer thickness of substantially about 12 nm.

[0341] In some non-limiting examples, the at least one semiconducting layer 330 may have an average layer thickness of substantially about 230 nm.

[0342] Turning to FIG. 5D, there is shown a SEM image of an example sample device showing a plurality of linear partitions 410 extending in a grid pattern, each cell of which comprises a pixel 415 of a plurality of sub-pixels 316. In some non-limiting examples, at various points, a through-hole may be formed within the linear partitions 410, one of which is shown highlighted by a pair of arrows. Those having ordinary skill in the relevant art will appreciate that such through-holes may, in some non-limiting examples, correspond to the separation between proximate ends of the respective upper sections 512 of the surrounding partitions 410 shown in FIG. 5C.

[0343] In some non-limiting examples, the lower section 511 of the partition 410 may comprise a photoresist material. In some non-limiting examples, the lower section 511 of the partition 410 may comprise a material substantially similar to a material of which the PDL 309 may be comprised.

[0344] In some non-limiting examples, the upper section 512 of the partition 410 may comprise a photoresist material. In some non-limiting examples, the upper section 512 of the partition 410 may comprise a material substantially similar to a material of which the PDL 309 may be comprised. In some non-limiting examples, the upper section 512 of the partition 410 may comprise a material substantially similar to a material of which the lower section 511 of the partition 410 may be comprised.

[0345] In some non-limiting examples, the lower section 511 of the partition 410 may comprise a material substantially similar to a material of which an auxiliary electrode 550 may be comprised.

[0346] In some non-limiting examples, as shown, there may be a partition 410 on one side of an adjacent non-emissive region 311 along at least one lateral axis, and there may be a partition 410 on an opposite side of the adjacent non-emissive region 310 along such lateral axis, such that the adjacent non-emissive region 311 is surrounded by the partitions 410 along such lateral axis.

[0347] In some non-limiting examples, as shown, the upper section 512 of the at least one partition 410 may extend laterally beyond the lower section 511 thereof on one side thereof. In some non-limiting examples, as shown, the side on which the upper section 512 of the at least one partition 410 extends laterally beyond the lower section 511 thereof may be proximate to, and face, the adjacent non-emissive region 311.

[0348] In some non-limiting examples, as shown, there may be an adjacent emissive region 310 disposed on a side of at least one of the partitions 410 opposite to the adjacent non-emissive region 311.

[0349] In some non-limiting examples, as shown, the side on which the upper section 512 of the at least one partition 410 extends laterally beyond the lower section 511 thereof may be distal from, and face away from, the adjacent emissive region 310.

[0350] In some non-limiting examples, the lateral aspect of the emissive region 310 may comprise at least one emissive region semiconducting layer 330edisposed over the first electrode 320, and a second electrode 340, disposed over the at least one emissive region semiconducting layer 330e. In some non-limiting examples, the at least one emissive region semiconducting layer 330e, and the second electrode 340, may extend laterally to cover at least the lateral aspect of a part of at least one adjacent non-emissive region 311. In some nonlimiting examples, as shown, the at least one emissive region semiconducting layer 330e, and the second electrode 340 may be disposed on at least a part of at least one PDL 309. In some non-limiting examples, as shown, the at least one partition semiconducting layer 330p, and a conductive coating 540 comprising a material of which the second electrode 340 may be comprised, may be disposed on at least a part of the partition 410.

[0351] In some non-limiting examples, the interposition of the at least one partition 410 between adjacent emissive regions 310 may force a local discontinuity, including withoutlimitation, in a longitudinal aspect, and a lateral aspect, in the at least one semiconducting layer 330 deposited.

[0352] In some non-limiting examples, as shown, an auxiliary electrode 550 may be disposed proximate to, including without limitation, within, the recessed region 522. In some non-limiting examples, as shown, the lower section 511 of the partition 410 may comprise the auxiliary electrode 550. In some non-limiting examples, as shown, the auxiliary electrode 550 may extend across an exposed layer surface 11 of the adjacent non-emissive region 311 surrounded by the partitions 410.

[0353] In some non-limiting examples, at least one of the: lateral aspect of the sheltered region 565, and longitudinal discontinuity, of the at least one partition 410 may impose a discontinuity between at least one of the: second electrode 340, and at least one emissive region semiconducting layer 330e, of one of the at least one emissive regions 310; with at least one of: a corresponding one of the: second electrode 340, and at least one emissive region semiconducting layer 330e, of another one of the at least one emissive region 310, an auxiliary electrode 550 proximate to the at least one partition 410, the conductive coating 540, and the at least one partition semiconducting layer 330p.

[0354] Turning now to FIG. 5E, there may be shown a cross-sectional view of an example version 500eof a fragment of the device 400 of FIG.4, taken along line 5E-5E, in which an emissive region 310 is surrounded, along at least one lateral aspect, by a layer discontinuity 410.

[0355] In some non-limiting examples, the device 500emay comprise a substrate 10 having an exposed layer surface 11. The substrate 10 may comprise at least one TFT structure 306. In some non-limiting examples, the at least one TFT structure 306 may be formed by depositing and patterning a series of thin films when fabricating the substrate 10, in some nonlimiting examples, as described herein.

[0356] In some non-limiting examples, the device 500emay comprise, in a lateral aspect, an emissive region 310 having an associated lateral aspect and at least one adjacent non-emissive region 311, each having an associated lateral aspect. In some non-limiting examples, the exposed layer surface 11 of the substrate 10 in the emissive region 310 may be providedwith a first electrode 320, that may be electrically coupled with the at least one TFT structure 306. In some non-limiting examples, a PDL 309 may be provided on the exposed layer surface 11, such that the PDL 309 covers the exposed layer surface 11 as well as at least one of: an edge, and a perimeter, of the first electrode 320. The PDL 309 may, in some non-limiting examples, be provided in the lateral aspect of the non-emissive region 311. In some nonlimiting examples, the PDL 309 may define a valley-shaped configuration that may provide an opening that generally may correspond to the lateral aspect of the emissive region 310 through which a layer surface of the first electrode 320 may be exposed. In some non-limiting examples, the device 500emay comprise a plurality of such openings defined by the PDLs 309, each of which may correspond to a (sub-) pixel 415 / 316 region of the device 500e.

[0357] As shown, in some non-limiting examples, a layer discontinuity 410, in the form of an undercut partition structure, may be provided on the exposed layer surface 11 in the lateral aspect of a non-emissive region 311, and as described herein, may define a sheltered region 565, such as a recessed region 522. In some non-limiting examples, as shown, the recessed region 522 may be formed by an edge (of a sidewall) of a lower section 511 of the partition 410 being at least one of: recessed, staggered, and offset, with respect to an edge (of a sidewall) of an upper section 512 of the partition 410 that may project beyond the recessed region 522.

[0358] In some non-limiting examples, as shown, the lower section 511 of the partition 410 may be disposed proximate to an uppermost layer of the PDL 309.

[0359] In some non-limiting examples, as shown, a lowermost surface (bottom) of the lower section 511 of the partition 410 may be disposed below an uppermost layer of the PDL 309. In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed on an exposed layer surface 11 of an uppermost layer of the PDL 309.

[0360] In some non-limiting examples, as shown, the upper section 512 of the partition 410 may extend longitudinally above an uppermost layer of the PDL 309.

[0361] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may be disposed proximate to a lowermost layer of the PDL 309.

[0362] In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed below a lowermost layer of the PDL 309. In some non-limiting examples, although not shown, a bottom of the lower section 511 of the partition 410 may be disposed on an exposed layer surface 11 of an underlying layer on which the PDL 309 is also disposed.

[0363] In some non-limiting examples, although not shown, a longitudinal extent of an uppermost layer of the upper section 512 of the partition 410 may be proximate to, including without limitation, substantially level to, an uppermost layer of the PDL 309.

[0364] In some non-limiting examples, as shown, the upper section 512 of the partition 410 may extend downward toward the substrate 10 on a side other than where the recessed region 522 lies. In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may be disposed on an exposed layer surface 11 on which the lower section 511 of the partition 410 may have been disposed on a side other than where the recessed region 522 lies.

[0365] In some non-limiting examples, although not shown, the partition 410 may exhibit a tapered profile in cross section in which a bottom of the lower section 511 of the partition 410 may be smaller than an uppermost surface (top) of the lower section 511 of the partition 410.

[0366] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that provides (at least in part) a substantially linearly tapered profile.

[0367] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that is (at least in part) substantially concave to provide (at least in part) a substantially curved tapered profile.

[0368] In some non-limiting examples, although not shown, the lower section 511 of the partition 410 may exhibit a sidewall that is (at least in part) substantially normal to a plane defined by the at least one lateral axes.

[0369] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that provides (at least in part) a substantially linearly tapered profile.

[0370] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that is (at least in part) substantially concave to provide (at least in part) a substantially curved tapered profile.

[0371] In some non-limiting examples, although not shown, the upper section 512 of the partition 410 may exhibit a sidewall that is (at least in part) substantially normal to a plane defined by the at least one lateral axes.

[0372] In some non-limiting examples, although not shown, a thickness of the lower section 511 of the partition 410 may be at least that of the upper section 512 of the partition 410.

[0373] In some non-limiting examples, although not shown, a thickness of the lower section 511 of the partition 410 may be no more than a thickness of the upper section 512 of the partition 410.

[0374] In some non-limiting examples, the lower section 511 of the partition 410 may comprise a photoresist material. In some non-limiting examples, the lower section 511 of the partition 410 may comprise a material substantially similar to a material of which the PDL 309 may be comprised.

[0375] In some non-limiting examples, the upper section 512 of the partition 410 may comprise a photoresist material. In some non-limiting examples, the upper section 512 of the partition 410 may comprise a material substantially similar to a material of which the PDL 309 may be comprised. In some non-limiting examples, the upper section 512 of the partition 410 may comprise a material substantially similar to a material of which the lower section 511 of the partition 410 may be comprised.

[0376] In some non-limiting examples, the lower section 511 of the partition 410 may comprise a material substantially similar to a material of which an auxiliary electrode 550 may be comprised.

[0377] In some non-limiting examples, as shown, the upper section 512 of the at least one partition 410 may extend laterally beyond the lower section 511 thereof on one side thereof. In some non-limiting examples, as shown, the side on which the upper section 512 ofthe at least one partition 410 extends laterally beyond the lower section 511 thereof may be distal from, and face away from, the adjacent emissive region 310.

[0378] In some non-limiting examples, the lateral aspect of the emissive region 310 may comprise at least one emissive region semiconducting layer 330edisposed over the first electrode 320, and a second electrode 340 disposed over the at least one emissive region semiconducting layer 330e. In some non-limiting examples, the at least one emissive region semiconducting layer 330e, and the second electrode 340, may extend laterally to cover at least the lateral aspect of a part of at least one adjacent non-emissive region 311. In some nonlimiting examples, as shown, the at least one emissive region semiconducting layer 330e, and the second electrode 340 may be disposed on at least a part of at least one PDL 309. In some non-limiting examples, as shown, the at least one partition semiconducting layer 330p, and a conductive coating 540 comprising a material of which the second electrode 340 may be comprised, may be disposed on at least a part of the partition 410.

[0379] In some non-limiting examples, the interposition of the at least one partition 410 between adjacent emissive regions 310 may force a local discontinuity, including without limitation, in a longitudinal aspect, and a lateral aspect, in the at least one semiconducting layer 330 deposited.

[0380] In some non-limiting examples, as shown, an auxiliary electrode 550 may be disposed proximate to, including without limitation, within, the recessed region 522. In some non-limiting examples, as shown, the lower section 511 of the partition 410 may comprise the auxiliary electrode 550.

[0381] In some non-limiting examples, at least one of the: lateral aspect of the sheltered region 565, and longitudinal discontinuity, of the at least one partition 410 may impose a discontinuity between at least one of the: second electrode 340, and at least one emissive region semiconducting layer 330e, of one of the at least one emissive regions 310; with at least one of: a corresponding one of the: second electrode 340, and at least one emissive region semiconducting layer 330e, of another one of the at least one emissive region 310, an auxiliary electrode 550 proximate to the at least one partition 410, the conductive coating 540, and the at least one partition semiconducting layer 330p.Cathode IR Drop Issues in Top-Emission Devices

[0382] Those having ordinary skill in the relevant art will appreciate that the process of depositing a deposited layer 230 to form the second electrode 340 may, in some non-limiting examples, be used in similar fashion to form an auxiliary electrode 550 for the device 300.

[0383] In some non-limiting examples, particularly in a top-emission device 300, the second electrode 340 may be formed by depositing a substantially thin conductive film layer in order, in some non-limiting examples, to reduce optical interference (including, without limitation, at least one of: attenuation, reflections, and diffusion) related to the presence of the second electrode 340.

[0384] In some non-limiting examples, particularly in at least one of: a bottomemission, and double-sided emission, device 300, the second electrode 340 may be formed as a substantially thick conductive layer without substantially affecting optical characteristics of such a device 300. Nevertheless, even in such scenarios, the second electrode 340 may nevertheless be formed as a substantially thin conductive film layer, in some non-limiting examples, so that the device 300 may be substantially transmissive relative to light incident on an external surface thereof, such that a substantial part of such externally-incident light may be transmitted through the device 300, in addition to the emission of light generated internally within the device 300 as disclosed herein.

[0385] In some non-limiting examples, a device 300 having at least one electrode 320, 340 with a high sheet resistance may create a large current resistance (IR) drop when coupled with the power source 304, in operation. In some non-limiting examples, such an IR drop may be compensated for, to some extent, by increasing a level of the power source 304. However, in some non-limiting examples, increasing the level of the power source 304 to compensate for the IR drop due to high sheet resistance, for at least one (sub-) pixel 415 / 316 may call for increasing the level of a voltage to be supplied to other components to maintain effective operation of the device 300.

[0386] In some non-limiting examples, as discussed elsewhere, a reduced thickness of the second electrode 340, may generally increase a sheet resistance of the second electrode 340, which may, in some non-limiting examples, reduce at least one of: the performance, andefficiency, of the device 300. By providing the auxiliary electrode 550 that may be electrically coupled with the second electrode 340, the sheet resistance and thus, the IR drop associated with the second electrode 340, may, in some non-limiting examples, be decreased.

[0387] In some non-limiting examples, to reduce power supply demands for a device 300 without significantly impacting an ability to make an electrode 320, 340 substantially thin, an auxiliary electrode 550 may be formed on the device 300 to allow current to be carried more effectively to various emissive region(s) 310 of the device 300, while at the same time, reducing the sheet resistance and its associated IR drop of the transmissive electrode 320, 340.

[0388] In some non-limiting examples, a sheet resistance specification, for a common electrode 320, 340 of a display device 300, may vary according to several parameters, including without limitation, at least one of: a (panel) size of the device 300, and a tolerance for voltage variation across the device 300. In some non-limiting examples, the sheet resistance specification may increase (that is, a lower sheet resistance is specified) as the panel size increases. In some non-limiting examples, the sheet resistance specification may increase as the tolerance for voltage variation decreases.

[0389] In some non-limiting examples, a sheet resistance specification may be used to derive an example thickness of an auxiliary electrode 550 to comply with such specification for various panel sizes.

[0390] In some non-limiting examples, the auxiliary electrode 550 may be electrically coupled with the second electrode 340 to reduce a sheet resistance thereof. In some nonlimiting examples, the auxiliary electrode 550 may be in physical contact, including without limitation, being deposited over at least a part thereof, with the second electrode 340 to reduce a sheet resistance thereof. In some non-limiting examples, the auxiliary electrode 550 may not be in physical contact with the second electrode 340 but may be electrically coupled with the second electrode 340 by several well-understood mechanisms. In some non-limiting examples, the presence of a substantially thin film (in some non-limiting examples, of up to about 50 nm) of a patterning coating 210 extending between and separating the auxiliary electrode 550 and the second electrode 340, may still allow a current to pass therethrough, thus allowing a sheet resistance of the second electrode 340 to be reduced.

[0391] The auxiliary electrode 550 may be electrically conductive. In some nonlimiting examples, the auxiliary electrode 550 may be formed by at least one of: a metal, and a metal oxide. Such metals may include, without limitation, Cu, Al, molybdenum (Mo), and Ag. In some non-limiting examples, the auxiliary electrode 550 may comprise a multi-layer metallic structure, including without limitation, one formed by Mo / Al / Mo. Such metal oxides may include, without limitation, ITO, ZnO, IZO, and other oxides comprising In, and Zn. In some non-limiting examples, the auxiliary electrode 550 may comprise a multi-layer structure formed by a combination of at least one metal and at least one metal oxide, including without limitation, Ag / ITO, Mo / ITO, ITO / Ag / ITO, and ITO / Mo / ITO. In some non-limiting examples, the auxiliary electrode 550 comprises a plurality of such electrically conductive materials.

[0392] Because of the nucleation-inhibiting properties of those portions 201 where the patterning coating 210 was disposed, the deposited material 731 disposed in the first portion 201 may tend to not remain, resulting in a pattern of selective deposition of the deposited layer 230, that may correspond substantially to at least one second portion 202, leaving the first portion 201 substantially devoid of a closed coating 240 of the deposited layer 230.

[0393] In other words, the deposited layer 230 that may form the auxiliary electrode 550 may be selectively deposited substantially only on a second portion 202 comprising those regions of the at least one semiconducting layer 330, that surround but do not occupy the first portion 201.

[0394] In some non-limiting examples, selectively depositing the auxiliary electrode 550 to cover only certain portions 202 of the lateral aspect of the device 300, while other portions 201 thereof remain uncovered, may one of: control, and reduce, optical interference related to the presence of the auxiliary electrode 550.

[0395] In some non-limiting examples, the auxiliary electrode 550 may be selectively deposited in a pattern that may not be readily detected by the naked eye from a typical viewing distance.

[0396] In some non-limiting examples, the auxiliary electrode 550 may be formed in devices 200 other than OLED devices 300, including for decreasing an effective resistance of the electrodes of such devices 300.

[0397] Conventionally, there have been a number of mechanisms identified to electrically couple the second electrode 340 to a pre-fabricated auxiliary electrode to mitigate a drop in IR, in some non-limiting examples, for mid- to large-size opto-electronic devices 300.

[0398] One such mechanism is to print, including without limitation, by ink-jet printing technologies, the (sub-) pixels 415 / 316 of the opto-electronic device 300 using an open subpixel concept. However, in some non-limiting examples, this mechanism imposes constraints on the aperture ratio achievable, as well as on the performance of the device 300.

[0399] One such mechanism is to force electrical coupling of the second electrode 340 with an auxiliary electrode 550 positioned therebeneath and separated by intervening material, including without limitation, the at least one semiconducting layer 330, by creating through-holes, including without limitation, by one of: drilling, and laser ablation, and depositing conductive material therein to electrically couple the second electrode 340 with the auxiliary electrode 550. However, in some non-limiting examples, these techniques may create a debris cloud, which may impact the vapour deposition process, and may result in low contact resistance, and in some non-limiting examples, may incur additional expense both in terms of equipment and product assembly (takt) time.

[0400] One such mechanism is to employ the layer discontinuity 410 discussed above in the context of the eLEAP concept to create a sheltered region 565 in which the auxiliary electrode 550 is disposed. Conventionally, a conductive coating is introduced, including without limitation, by PVD techniques, including without limitation, sputtering, including without limitation, using a deposition source that is tilted relative to a plane defined by a plurality of lateral axes of the device, within the sheltered region to electrically couple the second electrode 340 with the auxiliary electrode 550. However, in some non-limiting examples, the PVD techniques may cause damage to the device 300, including without limitation, the undercut structure 410 itself, and result in substantially reduced cathode transmission and substantially poor electrical contact between the second electrode 340 and the auxiliary electrode 550, and in some non-limiting examples, may incur additional expense both in terms of equipment and takt time.Patterning

[0401] In some non-limiting examples, with reference to FIG.2, in some non-limiting examples, a patterning coating 210, comprising a patterning material 611, which in some nonlimiting examples, may be a nucleation inhibiting coating (NIC) material, may be disposed, in some non-limiting examples, as a closed coating 240, on an exposed layer surface 11 of an underlying layer 1310, including without limitation, a substrate 10, of the device 200, in some non-limiting examples, restricted in lateral extent by selective deposition, including without limitation, using a shadow mask 615 such as, without limitation, an FMM, including without limitation, to the first portion 201.

[0402] Thus, in some non-limiting examples, in the second portion 202 of the device 200, the exposed layer surface 11 of the underlying layer 1310 of the device 200, may be substantially devoid of a closed coating 240 of the patterning coating 210.

[0403] In some non-limiting examples, the deposited layer 230 may be deposited in a second portion 202, by exposing the exposed layer surface 11 of an opto-electronic device 300, which may, in some non-limiting examples, comprise at least one semiconducting layer 330, to a vapor flux 612 of a patterning material 611, including without limitation, using a shadow mask 615, to form a patterning coating 210 in the first portion 201. Whether a shadow mask 615 is employed, in some non-limiting examples, as shown in FIG. 6, the patterning material 611 may be restricted, in its lateral aspect, substantially to a certain area of the device 300, which in some non-limiting examples, may comprise an emissive region 310, and a non-emissive region 311, including without limitation, at least one transmissive region 312 located therein.Patterning Coating

[0404] The patterning coating 210 may comprise a patterning material 611. In some non-limiting examples, the patterning material 611 may comprise an NIC material. In some non-limiting examples, the patterning coating 210 may comprise a closed coating 240 of the patterning material 611.

[0405] The patterning coating 210 may provide an exposed layer surface 11 with a substantially low propensity (including without limitation, a substantially low initial sticking probability) (in some non-limiting examples, under the conditions identified in the dual QCMtechnique described by Walker et al.) against the deposition of a deposited material 731 to be deposited thereon upon exposing such surface to a vapor flux 732 of the deposited material 731 , which, in some non-limiting examples, may be substantially no more than a propensity against the deposition of the deposited material 731 to be deposited on an exposed layer surface 11 of the underlying layer 1310 of the device 200, upon which the patterning coating 210 has been deposited.

[0406] Because of the attributes, including without limitation, a low initial sticking probability, of at least one of the: patterning coating 210, and patterning material 611, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 210 within the device 200, against the deposition of the deposited material 731 , the exposed layer surface 11 of the first portion 201 comprising the patterning coating 210 may be substantially devoid of a closed coating 240 of the deposited material 731.

[0407] In some non-limiting examples, exposure of the device 200 to a vapor flux 732 of the deposited material 731 may, in some non-limiting examples, result in the formation of a closed coating 240 of a deposited layer 230 of the deposited material 731 in the second portion 202, where the exposed layer surface 11 of the underlying layer 1310 may be substantially devoid of a closed coating 240 of the patterning coating 210.

[0408] In some non-limiting examples, where the patterning coating 210 is restricted in its lateral extent to the first portion 201, in the second portion 202 of the lateral aspect of the device 200, a deposited layer 230 comprising a deposited material 731 may be disposed as a closed coating 240 on an exposed layer surface 11 of the underlying layer 1310.

[0409] In some non-limiting examples, the deposited layer 230 may comprise a deposited material 731.

[0410] In some non-limiting examples, the deposited material 731 may comprise an element selected from at least one of: potassium (K), sodium (Na), lithium (Li), Ba, cesium (Cs), Yb, Ag, gold (Au), Cu, Al, Mg, Zn, Cd, tin (Sn), and yttrium (Y). In some non-limiting examples, the element may comprise at least one of: K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and Mg. In some non-limiting examples, the element may comprise at least one of: Cu, Ag, andAu. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may comprise at least one of: Mg, Zn, Cd, and Yb. In some non-limiting examples, the element may comprise at least one of: Mg, Ag, Al, Yb, and Li. In some non-limiting examples, the element may comprise at least one of: Mg, Ag, and Yb. In some non-limiting examples, the element may comprise at least one of: Mg, and Ag. In some non-limiting examples, the element may be Ag.

[0411] In some non-limiting examples, the deposited material 731 may comprise a pure metal. In some non-limiting examples, the deposited material 731 may be (substantially) pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of one of at least about: 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%. In some non-limiting examples, the deposited material 731 may be (substantially) pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of one of at least about: 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%.

[0412] In some non-limiting examples, the deposited material 731 may comprise an alloy. In some non-limiting examples, the alloy may be one of: an Ag-containing alloy, an Mg-containing alloy, and an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition that may range from about 1:10 (Ag:Mg) to about 10:1 by volume.Selective Deposition Using Patterning Coatings

[0413] FIG. 6 is an example schematic diagram illustrating a non-limiting example of an evaporative deposition process, shown generally at 600, in a chamber 620, for selectively depositing a patterning coating 210 onto a first portion 201 of an exposed layer surface 11 of an underlying layer 1310, including without limitation, the substrate 10.

[0414] In the process 600, a quantity of a patterning material 611 may be heated under vacuum, to evaporate (sublime) the patterning material 611. In some non-limiting examples, the patterning material 611 may comprise substantially (including without limitation, entirely), a material used to form the patterning coating 210. In some non-limiting examples, such material may comprise an organic material.

[0415] An evaporated flux 612 of the patterning material 611 may flow through the chamber 620, including in a direction indicated by arrow 601, toward the exposed layer surface 11. When the evaporated flux 612 is incident on the exposed layer surface 11, the patterning coating 210 may be formed thereon.

[0416] In some non-limiting examples, as shown in the figure for the process 600, the patterning coating 210 may be selectively deposited only onto a portion, in the example illustrated, the first portion 201, of the exposed layer surface 11 of the underlying layer 1310, by the interposition, between the vapor flux 612 and the exposed layer surface 11 of the underlying layer 1310, of a shadow mask 615, which in some non-limiting examples, may be an FMM. In some non-limiting examples, such a shadow mask 615 may, in some non-limiting examples, be used to form substantially small features, with a feature size on the order of (smaller than) tens of microns.

[0417] The shadow mask 615 may have at least one aperture 616 extending therethrough such that a part of the evaporated flux 612 passes through the aperture 616 and may be incident on the exposed layer surface 11 to form the patterning coating 210. Where the evaporated flux 612 does not pass through the aperture 616 but is incident on a surface 617 of the shadow mask 615, it is precluded from being disposed on the exposed layer surface 11 to form the patterning coating 210. In some non-limiting examples, the shadow mask 615 may be configured such that the evaporated flux 612 that passes through the aperture 616 may be incident on the first portion 201 but not the second portion 202. The second portion 202 of the exposed layer surface 11 may thus be substantially devoid of the patterning coating 210. In some non-limiting examples (not shown), the patterning material 611 that is incident on the shadow mask 615 may be deposited on the surface 617 thereof.

[0418] Accordingly, a patterned surface may be produced upon completion of the deposition of the patterning coating 210.

[0419] FIG. 7 is an example schematic diagram illustrating a non-limiting example of a result of an evaporative process, shown generally at 700a, in a chamber 620, for selectively depositing a closed coating 240 of a deposited layer 230 onto the second portion 202 of an exposed layer surface 11 of the underlying layer 1310 that is substantially devoid of thepaterning coating 210 that was selectively deposited onto the first portion 201, including without limitation, by the evaporative process 600 of FIG. 6.

[0420] In some non-limiting examples, the deposited layer 230 may be comprised of a deposited material 731, in some non-limiting examples, comprising at least one metal. It will be appreciated by those having ordinary skill in the relevant art that, in some non-limiting examples, a vaporization temperature of an organic material is low relative to the vaporization temperature of metals, such as may be employed as a deposited material 731.

[0421] Thus, in some non-limiting examples, there may be fewer constraints in employing a shadow mask 615 to selectively deposit a paterning coating 210 in a patern, relative to directly patterning the deposited layer 230 using such shadow mask 615.

[0422] Once the paterning coating 210 has been deposited on the first portion 201 of the exposed layer surface 11 of the underlying layer 1310, a closed coating 240 of the deposited material 731 may be deposited, on the second portion 202 of the exposed layer surface 11 that is substantially devoid of the patterning coating 210, as the deposited layer 230.

[0423] In the process 700a, a quantity of the deposited material 731 may be heated under vacuum, to sublime the deposited material 731. In some non-limiting examples, the deposited material 731 may be comprised of substantially, including without limitation, entirely, a material used to form the deposited layer 230.

[0424] An evaporated flux 732 of the deposited material 731 may be directed inside the chamber 620, including in a direction indicated by arrow 701, toward the exposed layer surface 11 of the first portion 201 and of the second portion 202. When the evaporated flux 732 is incident on the second portion 202 of the exposed layer surface 11 , a closed coating 240 of the deposited material 731 may be formed thereon as the deposited layer 230.

[0425] In some non-limiting examples, deposition of the deposited material 731 may be performed using one of: an open mask, and a mask-free, deposition process.

[0426] It will be appreciated by those having ordinary skill in the relevant art that, contrary to that of a shadow mask 615, the feature size of an open mask may be generally comparable to the size of a device 200 being manufactured.

[0427] It will be appreciated by those having ordinary skill in the relevant art that, in some non-limiting examples, the use of an open mask may be omitted. In some non-limiting examples, an open mask deposition process described herein may alternatively be conducted without the use of an open mask, such that an entire target exposed layer surface 11 may be exposed.

[0428] Indeed, as shown in FIG. 7, the evaporated flux 732 may be incident both on an exposed layer surface 11 of the patterning coating 210 across the first portion 201 as well as the exposed layer surface 11 of the underlying layer 1310 across the second portion 202 that is substantially devoid of the patterning coating 210.

[0429] Since the exposed layer surface 11 of the patterning coating 210 in the first portion 201 may exhibit a substantially low initial sticking probability against the deposition of the deposited material 731 relative to the exposed layer surface 11 of the underlying layer 1310 in the second portion 202, the deposited layer 230 may be selectively deposited substantially only on the exposed layer surface 11 of the underlying layer 1310 in the second portion 202, that is substantially devoid of the patterning coating 210. By contrast, the evaporated flux 732 incident on the exposed layer surface 11 of the patterning coating 210 across the first portion 201 may tend to not be deposited (as shown 733), and the exposed layer surface 11 of the patterning coating 210 across the first portion 201 may be substantially devoid of a closed coating 240 of the deposited layer 230.

[0430] In some non-limiting examples, an initial deposition rate, of the evaporated flux 732 on the exposed layer surface 11 of the underlying layer 1310 in the second portion 202, may be one of at least about: 200, 550, 900, 1,000, 1,500, 1,900, and 2,000, times an initial deposition rate of the evaporated flux 732 on the exposed layer surface 11 of the patterning coating 210 in the first portion 201.

[0431] Thus, the combination of the selective deposition of a patterning coating 210 in Fig- 6 using a shadow mask 615 and one of: the open mask, and a mask- free, deposition of the deposited material 731 may result in a version 700aof the device 200 shown in FIG. 7.

[0432] After selective deposition of the patterning coating 210 across the first portion 201, a closed coating 240 of the deposited material 731 may be deposited over the device 700aas the deposited layer 230, in some non-limiting examples, using one of: an open mask, and a mask- free, deposition process, but may remain substantially only within the second portion 202, which is substantially devoid of the patterning coating 210.

[0433] The patterning coating 210 may provide, within the first portion 201, an exposed layer surface 11 with a substantially low initial sticking probability, against the deposition of the deposited material 731, and that is substantially no more than the initial sticking probability, against the deposition of the deposited material 731, of the exposed layer surface 11 of the underlying layer 1310 of the device 700awithin the second portion 202.

[0434] Thus, the first portion 201 may be substantially devoid of a closed coating 240 of the deposited material 731.

[0435] While the present disclosure contemplates the patterned deposition of the patterning coating 210 by an evaporative deposition process, involving a shadow mask 615, those having ordinary skill in the relevant art will appreciate that, in some non-limiting examples, this may be achieved by any applicable deposition process, including without limitation, a micro-contact printing process.

[0436] While the present disclosure contemplates the patterning coating 210 being an NIC, those having ordinary skill in the relevant art will appreciate that, in some non-limiting examples, the patterning coating 210 may be an NPC 1320. In such examples, the portion (such as, without limitation, the first portion 201) in which the NPC 1320 has been deposited may, in some non-limiting examples, have a closed coating 240 of the deposited material 731, while the other portion (such as, without limitation, the second portion 202) may be substantially devoid of a closed coating 240 of the deposited material 731.

[0437] In some non-limiting examples, an average layer thickness of the patterning coating 210 and of the deposited layer 230 deposited thereafter may be varied according to a variety of parameters, including without limitation, a given application and given performance characteristics. In some non-limiting examples, the average layer thickness of the patterning coating 210 may be comparable to, including without limitation, substantially no more than, an average layer thickness of the deposited layer 230 deposited thereafter. Use of a substantiallythin patterning coating 210 to achieve selective patterning of a deposited layer 230 may have applicability to provide flexible devices 200.

[0438] In some non-limiting examples, the device 300 may further comprise an NPC 1320 disposed between the patterning coating 210 and the second electrode 340.

[0439] In some non-limiting examples, the patterning coating 210 may be formed concurrently with the at least one semiconducting layer(s) 330. In some non-limiting examples, at least one material used to form the patterning coating 210 may also be used to form the at least one semiconducting layer(s) 330 to reduce a number of stages for fabricating the device 300.

[0440] Turning now to FIG. 8A, there may be shown a cross-sectional view of the device 500a, in which, after a patterning coating 210 has been deposited, including without limitation, by the mechanism disclosed in FIG.6, in, and substantially across the lateral extent of the adjacent emissive regions 310 surrounding the at least one partition 410, and across the lateral extent of the upper section 512 of the at least one partition 410, but not in the at least one recessed region 522, the device 500ais exposed to a vapour flux 732 of a deposited material 731, such that a deposited layer 230 is formed, including without limitation, by the mechanism disclosed in FIG. 7, in the at least one recessed region 522, between the second electrode 340 in the adjacent emissive region 310 and the auxiliary electrode 550 proximate thereto, including without limitation, one of: forming part of, and extending below, (the lower section 511 of) the at least one partition 410.

[0441] Thus, while the interposition of the at least one partition 410 forces a local discontinuity, including without limitation, in a longitudinal aspect, and a lateral aspect, in the at least one semiconducting layer 330 deposited across each of a plurality of adjacent emissive regions 310 surrounding the at least one partition 410, such lateral discontinuity in the second electrode 340 formed by the interposition of the at least one partition 410 may be overcome by the presence of the deposited layer 230 electrically coupling the second electrode 340 of a first adjacent emissive region 310 with the auxiliary electrode 550 proximate thereto, including without limitation, one of: forming part of, and extending below, (the lower section 511 of) the at least one partition 410, and the presence of the deposited layer 230 electrically coupling thesecond electrode 340 of a second adjacent emissive region 310 with the auxiliary electrode 550, such that the second electrodes 340 of the first and second adjacent emissive regions 310 are electrically coupled, while the at least one semiconducting layer 330 thereof remain substantially electrically isolated.

[0442] In some non-limiting examples, the use of a patterning coating 210 to facilitate the selective deposition of the deposited layer 230, as described herein, including without limitation, by the mechanisms of FIGs.6 and 7, may serve to facilitate implementation of the eLEAP method, while, in some non-limiting examples, concomitantly reducing some issues that have arisen with conventional methods of implementing an eLEAP method.

[0443] In some non-limiting examples, since the second electrode 340 may, in some non-limiting examples, be formed as a thin layer, including without limitation, of between about 5-15 nm of metal, including without limitation, MgAg, including without limitation, in a ratio of substantially about 1:9, there may be challenges in establishing, using conventional eLEAP methods, a reliable electrical connection between the entirety of second electrode 340 within an emissive region 310 with an auxiliary electrode 550 proximate thereto.

[0444] In some non-limiting examples, conventional eLEAP methods use removal techniques, including without limitation, photolithography, to etch away parts of the OLED stack, which may leave edges of certain of the layers of the active region 308 exposed. Such edges may, in some non-limiting examples, serve as a point of ingress for at least one of: moisture, and air, into the device through lateral migration.

[0445] Those having ordinary skill in the relevant art will appreciate that the shape of the deposited layer 230 may differ from the shapes shown in FIG. 8A, and may take on a shape shown in any of FIGs. 8B, 8E, 8F, 8G, and 8H, any combination thereof, and indeed any shape suitable for the purpose.Constant Current Circuit Using Common Anode

[0446] Turning now to FIG. 8B, there may be shown a cross-sectional view of a device 800b, in which (a fragment of) at least one partition 410 is shown adjacent to an emissive region 310. Unlike in FIG. 8A, in the device 800b only one adjacent emissive region 310 is shown on one side of the partition 410.

[0447] In the emissive region 310, the first electrode 320, which may, in some nonlimiting examples, be a common anode 150, is not electrically coupled to a TFT 306. Indeed, there is no TFT 306 positioned directly below the first electrode 320.

[0448] Rather, the lower section 511 of the partition 410 is shown to pass through the PDL 309 and the TFT insulating layer 307 to be electrically coupled with an N-type TFT 306n.

[0449] In some non-limiting examples, the lower section 511 of the at least one partition 410 may be comprised of a metallic material, including without limitation, Al.

[0450] In some non-limiting examples, the upper section 512 of the at least one partition 410 may be comprised of a metallic material, including without limitation, titanium (Ti).

[0451] In FIG. 8B, after a patterning coating 210 has been deposited, including without limitation, by the mechanism disclosed in FIG.6, in, and substantially across the lateral extent of the adjacent emissive region 310 proximate to the at least one partition 410, and across the lateral extent of the upper section 512 of the at least one partition 410, but not in the at least one recessed region 522, the device 800b is exposed to a vapour flux 732 of a deposited material 731, such that a deposited layer 230 is formed, including without limitation, by the mechanism disclosed in FIG. 7, in the at least one recessed region 522, between the second electrode 340 in the adjacent emissive region 310 and the lower section 511 of the at least one partition 410.

[0452] Those having ordinary skill in the relevant art will appreciate that the shape of the deposited layer 230 may differ from the shapes shown in FIG. 8B, and may take on a shape shown in any of FIGs. 8A, 8E, 8F, 8G, and 8H, any combination thereof, and indeed any shape suitable for the purpose.

[0453] Thus, the second electrode 340, which may, in some non-limiting examples, be a cathode 130, may be electrically coupled with an electrode of the N-type driver TFT 306n, so as to implement a constant-current circuit employing a common anode 150 with independent cathodes 130 configuration, such as is shown in FIG. ID.Controlled ConnectionsIn-Cell Touch

[0454] Turning now to FIG. 8C, there may be shown a cross-sectional view of a device 800c, with a corresponding plan view shown immediately therebelow, illustrating an example configuration of the at least one partition 410 surrounded by at least one adjacent emissive region 310.

[0455] In some non-limiting examples, as shown, a lower section 511 of the at least one partition 410, which in some non-limiting examples, may comprise a metal to form an electrode 81 It, may extend through both the PDL 309 and the TFT insulating layer 307, including without limitation, for electrically coupling with a touch control circuit (not shown) beneath the frontplane 301 of the device 800cupon detecting, in some non-limiting examples, capacitively, a touch on the conductive coating 540 comprising a material of which the second electrode 340 of the adjacent emissive region(s) 310 may be comprised, including without limitation, MgAg, in a ratio of substantially about 1:9, disposed on least a part of the partition 410.

[0456] In some non-limiting examples, the upper section 512 of the at least one partition 410 may comprise photoresist.

[0457] In some non-limiting examples, the at least one partition 410 may thus provide an in-cell touch capability to the device 800c.

[0458] In FIG. 8C, a patterning coating 210 has been deposited, including without limitation, by the mechanism disclosed in FIG.6, in, and substantially across the lateral extent of the adjacent emissive region(s) 310 proximate to the at least one partition 410, and across the lateral extent of the upper section 512 of the at least one partition 410, but not in the at least one recessed region 522. However, the device 800cis not thereafter exposed to a vapour flux 732 of a deposited material 731, including without limitation, by the mechanism disclosed in FIG.7, to form a deposited layer 230.

[0459] In some non-limiting examples, the deposition of the patterning coating 210 across the lateral extent of the upper section 512 of the at least one partition 410 may not interfere with the ability of the electrode 81 It to detect, in some non-limiting examples, capacitively, a touch on the conductive coating 540 disposed on at least a part of the partition 410, notwithstanding the presence of the patterning coating 210 between the touch point and the conductive coating 540.

[0460] In some non-limiting examples, the absence of the deposited layer 230, together with a lateral separation, occasioned (at least in part) by, in some non-limiting examples, a lateral extent of the recessed region 522, between the second electrode 340 of the adjacent emissive region(s) 310 and the conductive lower section 511 of the at least one partition 410, ensures that the second electrode 340 of the adjacent emissive region(s) 310 is not electrically coupled with the lower section 511 of the at least one partition 410.

[0461] In some non-limiting examples, the absence of the deposited layer 230, together with a longitudinal separation occasioned (at least in part) by, in some non-limiting examples, a height of the lower section 511 of the at least one partition 410, and a lateral separation, occasioned (at least in part) by, in some non-limiting examples, a lateral extent of the recessed region 522, between the second electrode 340 of the adjacent emissive region(s) 310 and the conductive coating 540 disposed on at least a part of the at least one partition 410, ensures that the second electrode 340 of the adjacent emissive region(s) 310 is not electrically coupled with the conductive coating 540 disposed on at least a part of the at least one partition 410.

[0462] Those having ordinary skill in the relevant art will appreciate that the at least one partition 410 shown in FIG. 8C may, in some non-limiting examples, be replaced by a partition 410, including without limitation, those shown on at least one of the: left, and right, partition 410 shown in FIG. 5B.

[0463] Those having ordinary skill in the relevant art will appreciate that the at least one partition 410 shown in FIG. 8C may, in some non-limiting examples, be replaced by the non-emissive region 311 and the partitions 410 surrounding it, shown in FIG. 5C.CGL Disconnection

[0464] Turning now to FIG. 8D, there may be shown a cross-section view of a device 800a, with a corresponding plan view shown immediately therebelow, illustrating an example configuration of the at least one partition 410 surrounded by at least one adjacent emissive region 310.

[0465] In some non-limiting examples, as shown, a lower section 81 la of the at least one partition 410, which in some non-limiting examples, may comprise at least one of a: metal, including without limitation, MgAg, and photoresist, to form an electrode 811a, may bedeposited on an exposed layer surface of an underlying layer, including without limitation, the PDL 309.

[0466] In some non-limiting examples, the upper section 512 of the at least one partition 410 may comprise photoresist.

[0467] In some non-limiting examples, the at least one partition 410 may thus provide a discontinuity between at least one emissive region semiconducting layer 330e, including without limitation, a CGL (not shown), of a first adjacent emissive region 310, and a corresponding at least one emissive region semiconducting layer 330e, including without limitation, a CGL (not shown), of a second adjacent emissive region 310 between which the at least one partition 410 may be interposed.

[0468] In FIG. 8D, a patterning coating 210 has been deposited, including without limitation, by the mechanism disclosed in FIG.6, in, and substantially across the lateral extent of the adjacent emissive region(s) 310 proximate to the at least one partition 410, and across the lateral extent of the upper section 512 of the at least one partition 410, but not in the at least one recessed region 522. However, the device 800a is not thereafter exposed to a vapour flux 732 of a deposited material 731, including without limitation, by the mechanism disclosed in FIG.7, to form a deposited layer 230.

[0469] In some non-limiting examples, the absence of the deposited layer 230, together with at least one of a: composition of the electrode 811a, and lateral separation, occasioned at least in part) by, in some non-limiting examples, a lateral extent of the recessed region 522, between the second electrode 340 of the adjacent emissive region(s) 310 and the lower section 511 of the at least one partition 410, ensures that the at least one emissive region semiconducting layer 330e, including without limitation, a CGL (not shown), of the adjacent emissive regions 310 are not electrically coupled across the at least one partition 410.

[0470] In some non-limiting examples, the absence of the deposited layer 230, together with a longitudinal separation occasioned (at least in part) by, in some non-limiting examples, a height of the lower section 511 of the at least one partition, 410, and a lateral separation, occasioned (at least on part) by, in some non-limiting examples, a lateral extent of the recessed region 522, between the second electrode 340 of the adjacent emissive region(s) 310 and theconductive coating 540 disposed on at least a part of the at least one partition 410, ensures that the second electrode 340 of the adjacent emissive region(s) 310 is not electrically coupled with the conductive coating 540 disposed on at least a part of the at least one partition 410.

[0471] Those having ordinary skill in the relevant art will appreciate that the at least one partition 410 shown in FIG. 8D may, in some non-limiting examples, be replaced by a partition 410, including without limitation, those shown on at least one of the: left, and right, partition 410 shown in FIG. 5B.

[0472] Those having ordinary skill in the relevant art will appreciate that the at least one partition 410 shown in FIG. 8D may, in some non-limiting examples, be replaced by the non-emissive region 311 and the partitions 410 surrounding it, shown in FIG. 5C.Linear Undercut

[0473] Turning now to FIG. 8E, there may be shown in plan, an example layout of a plurality of (sub-) pixels 415 / 316, each having a corresponding emissive region 310. In some non-limiting examples, as shown, each pixel 415 may be comprised of three sub-pixels 316, each corresponding to a different colour, including without limitation, R(ed), G(reen), and B(lue), and each surrounded by a pixel region formed by a plurality of partitions 410, which, in some non-limiting examples, may each comprise a linear undercut structure.

[0474] In some non-limiting examples, as shown along line 8 A- 8 A, at least one part of the at least one partition 410 may exhibit an upper section 512nthat is similar in configuration to the upper section 512 of device 800a, shown in FIG. 8A and reproduced herein. In some non-limiting examples, such at least one part of the at least one partition 410 may exhibit a contact line structure, in which the second electrode 340 of the adjacent emissive region(s) 310 may be electrically coupled with the auxiliary electrode 550 via the deposited layer 230 deposited within the recessed region 522.

[0475] Elsewhere along the at least one partitions 410, in some non-limiting examples, as shown, at least one part of the at least one partition 410 may exhibit a non-contact line 810 structure, such as is shown along line 8E-8E, and wherein the at least one partition 410 may comprise an upper section 512eof device 800e, in which the upper section 512epartially fillsthe recessed region 522, so as to extend along a sidewall of the lower section 511 thereof, such as is shown in device 800e.

[0476] In some non-limiting examples, at such non-contact line 810 structures, the sidewall of the lower section 511 of the at least one partition 410 may be enclosed by a part of the upper section 512e, such that, if, after a patterning coating 210 has been deposited, including without limitation, by the mechanism disclosed in FIG.6, in and substantially across the lateral extent of the adjacent emissive region(s) 310 proximate to the at least one partition 410, and across the lateral extent of the upper section 512eof the at least one partition, but not in the at least one recessed region 522, the device 800eis exposed to a vapour flux 732 of a deposited material 731, such that a deposited layer 230 is formed, including without limitation, by the mechanism disclosed in FIG. 7, in the recessed region 522 between the second electrode 340 in the adjacent emissive region 310 and the at least one partition 410, the enclosure of the lower section 511 of the at least one partition 410 by a part of the upper section 512e, ensures that the second electrode 340 of the adjacent emissive region(s) 310 is not electrically coupled with the lower section 511 of the at least one partition 410.

[0477] In some non-limiting applications, introducing the contact line structures and non-contact line 810 structures in the partition region may have increased applicability in some scenarios calling for an increased aperture ratio of (sub-) pixels 415 / 316 compared to the scenarios where a through-hole is introduced in the linear partitions 410, such as may be shown in FIG. 5D

[0478] Those having ordinary skill in the relevant art will appreciate that the shape of the deposited layer 230 may differ from the shapes shown in FIG. 8E, and may take on a shape shown in any of FIGs. 8A, 8B, 8F, 8G, and 8H, any combination thereof, and indeed any shape suitable for the purpose.Selectively Deposited Microweld to Couple Cathode to Auxiliary Electrode

[0479] Turning now to FIG. 8F, there may be shown a cross-sectional view of the device 500b, in which, after a patterning coating 210 has been deposited, including without limitation, by the mechanism disclosed in FIG.6, in, and substantially across the lateral extent of the adjacent non-emissive regions 311, but not in the at least one recessed region 522, thedevice 500b is exposed to a vapour flux 732 of a deposited material 731, including without limitation, MgAg, in a ratio of substantially about 1:9, such that a deposited layer 230 is formed, including without limitation, by the mechanism disclosed in FIG. 7, in the at least one recessed region 522 so as to electrically couple the second electrode 340 in the adjacent emissive region 310 with the auxiliary electrode 550 proximate thereto, including without limitation, one of: forming part of, and extending below, (the lower section 511 of) the at least one partition 410.

[0480] In some non-limiting examples, as shown, the deposited layer 230pmay extend around a part of the upper section 512 that extends beyond the lower section 511 to electrically couple with the conductive coating 540, In some non-limiting examples, the deposited layer 230 may extend across a lower surface of the part of the upper section 512 that extends beyond the lower section 511, In some non-limiting examples, the deposited layer 230 may extend across at least a part of a sidewall of the lower section 511 therebelow.

[0481] In some non-limiting examples, the deposited layer 230 may comprise an average layer thickness of substantially about 50 nm.

[0482] In some non-limiting examples, as shown, the deposited layer 230 may comprise a deposited layer 230eto electrically couple the second electrode 340 in the adjacent emissive region 310 with the auxiliary electrode 550.

[0483] Those having ordinary skill in the relevant art will appreciate that, in some nonlimiting examples, although not shown, the conductive coating 540 comprising a material of which the second electrode 340 may be composed, disposed on at least a part of the at least one partition 410, may be integral with a second electrode of another emissive region 310 (not shown), such that the conductive coating 540 may in fact comprise a second electrode 340 of such other emissive region 310 (not shown).

[0484] In some non-limiting examples, as shown, the deposited layer 230 may comprise a deposited layer 230pto electrically couple the conductive coating 540 disposed on at least a part of the at least one partition 410 with the auxiliary electrode 550.

[0485] Those having ordinary skill in the relevant art will appreciate that the shape of the deposited layer 230 may differ from the shapes shown in FIG. 8F, and may take on a shapeshown in any of FIGs. 8A, 8B, 8E, 8G, and 8H, any combination thereof, and indeed any shape suitable for the purpose.

[0486] In some non-limiting examples, the deposited layer 230 may establish a reliable electrical connection between the second electrode 340 and the auxiliary electrode 550 and may substantially expand the process window.

[0487] Turning now to FIG. 8G, there may be shown a cross-sectional view of the device 500c, in which, after a patterning coating 210 has been deposited, including without limitation, by the mechanism disclosed in FIG.6, in, and substantially across a central part of the lateral extent of the non-emissive region 311 surrounded by the at least one partition 410, together with the lateral extent of the upper section 512 of the at least one partition 410 and across the lateral extent of the emissive region 310, but not in the recessed region 522 formed by the taper of the at least one partition 410, the device 500cis exposed to a vapour flux 732 of a deposited material 731, including without limitation, MgAg, in a ratio of substantially about 1:9, such that a deposited layer 230 is formed, including without limitation, by the mechanism disclosed in FIG. 7, in the at least one recessed region 522 so as to electrically couple the second electrode 340 in the adjacent emissive region 310 and disposed on at least a part of the at least one partition 410 adjacent thereto, with the auxiliary electrode 550 proximate thereto, including without limitation, one of: forming part of, and extending below, (the lower section 511 of) the at least one partition 410.

[0488] In some non-limiting examples, the deposited layer 230 may have an average layer thickness of substantially about 50 nm.

[0489] In some non-limiting examples, the patterning coating 210 may have an average layer thickness of substantially about 8 nm.

[0490] Turning now to FIG. 8H, there may be shown a cross-sectional view of the device 500e, in which, after a patterning coating 210 has been deposited, including without limitation, by the mechanism disclosed in FIG.6, in, and substantially across the lateral extent of the adjacent emissive region 310, and across the lateral extent of the upper section 512 of the at least one partition 410 adjacent thereto, but not in the at least one recessed region 522, the device 500eis exposed to a vapour flux 732 of a deposited material 731, such that a depositedlayer 230 is formed, including without limitation, by the mechanism disclosed in FIG. 7, in the at least one recessed region 522, between the second electrode 340 in the adjacent emissive region 310 and the conductive coating 540 comprising a material of which the second electrode 340 may be comprised, disposed on at least a part of the partition 410 on a side other than where the recessed region 522 lies.Attributes of Patterning Coating / MaterialComposition

[0491] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, may comprise at least one of: a fluorine (F) atom, and a silicon (Si) atom. By way of non-limiting example, the patterning material 611 for forming the patterning coating 210 may be a compound that comprises at least one of: F and Si.

[0492] In some non-limiting examples, the patterning material 611 may comprise a compound that comprises F. In some non-limiting examples, the patterning material 611 may comprise a compound that comprises F and a carbon atom. In some non-limiting examples, the patterning material 611 may comprise a compound that comprises F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 0.5, 0.7, 1, 1.5, 2, and 2.5.

[0493] In some non-limiting examples, an atomic ratio of F to C may be determined by counting the F atoms present in the compound structure, and for C atoms, only counting the sp3hybridized C atoms present in the compound structure. In some non-limiting examples, the patterning material 611 may comprise a compound that comprises, as part of its molecular substructure, a moiety comprising F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 1, 1.5, and 2.

[0494] In some non-limiting examples, the patterning material 611 may comprise an organic-inorganic hybrid material.

[0495] In some non-limiting examples, the patterning material 611 may comprise an oligomer.

[0496] In some non-limiting examples, the patterning material 611 may comprise a compound having a molecular structure comprising a backbone and at least one functionalgroup bonded to the backbone. In some non-limiting examples, the backbone may be an inorganic moiety, and the at least one functional group may be an organic moiety.

[0497] In some non-limiting examples, such compound may have a molecular structure comprising a siloxane group. In some non-limiting examples, the siloxane group may be one of: a linear siloxane group, a branched siloxane group, and a cyclic siloxane group. In some non-limiting examples, the backbone may comprise a siloxane group. In some non-limiting examples, the backbone may comprise a siloxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compound may comprise fluoro-siloxanes, including without limitation, Example Material 6 and Example Material 9 (discussed below).

[0498] In some non-limiting examples, the compound may have a molecular structure comprising a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a POSS. In some non-limiting examples, the backbone may comprise a silsesquioxane group. In some non-limiting examples, the backbone may comprise a silsesquioxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compound may comprise fluoro-silsesquioxane and fluoro-POSS, including without limitation, Example Material 8 (discussed below).

[0499] In some non-limiting examples, the compound may have a molecular structure comprising at least one of: a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be at least one of: phenyl, and naphthyl. In some non-limiting examples, at least one C atom of an aryl group may be substituted by a heteroatom, which by way of nonlimiting example may be at least one of: O, N, and S, to derive a heteroaryl group. In some non-limiting examples, the backbone may comprise at least one of: a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the backbone may comprise at least one of: a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group.

[0500] In some non-limiting examples, the compound may have a molecular structure comprising at least one of: a substituted hydrocarbon group, an unsubstituted hydrocarbon group, a linear hydrocarbon group, a branched hydrocarbon group, and a cyclic hydrocarbon group. In some non-limiting examples, at least one C atom of the hydrocarbon group may be substituted by a heteroatom, including without limitation, at least one of: O, N, and S.

[0501] In some non-limiting examples, the compound may have a molecular structure comprising a phosphazene group. In some non-limiting examples, the phosphazene group may be at least one of: a linear phosphazene group, a branched phosphazene group, and a cyclic phosphazene group. In some non-limiting examples, the backbone may comprise a phosphazene group. In some non-limiting examples, the backbone may comprise a phosphazene group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. Nonlimiting examples of such compound include fluoro-phosphazenes. A non-limiting example of such compound is Example Material 4 (discussed below).

[0502] In some non-limiting examples, the compound may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer comprising F. In some nonlimiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorooligomer. In some non-limiting examples, the compound may be a block oligomer comprising F. Non-limiting examples, of at least one of: fluoropolymers, and fluorooligomers, are those having the molecular structure of at least one of: Example Material 3, Example Material 5, and Example Material 7 (discussed herein).

[0503] In some non-limiting examples, the compound may be a metal complex. In some non-limiting examples, the metal complex may be an organo-metal complex. In some nonlimiting examples, the organo-metal complex may comprise F. In some non-limiting examples, the organo-metal complex may comprise at least one ligand comprising F. In some nonlimiting examples, the at least one ligand comprising F may comprise a fluoroalkyl group.

[0504] In some non-limiting examples, the patterning material 611 may comprise a plurality of different materials.Initial Sticking Probability

[0505] In some non-limiting examples, the initial sticking probability of the patterning material 611 may be determined by depositing such material as at least one of: a film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 210 within the device 200, having sufficient thickness so as to mitigate / reduce any effects on the degree of inter-molecular interaction with the underlying layer 1310 upon deposition on a surface thereof. In some non-limiting examples, the initial sticking probability may be measured on a film / coating having a thickness of one of at least about: 20 nm, 25 nm, 30 nm, 50 nm, 60 nm, and 100 nm.

[0506] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 210 within the device 200, may have an initial sticking probability against the deposition of the deposited material 731, that is one of no more than about: 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0507] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 210 within the device 200, may have an initial sticking probability against the deposition of at least one of: Ag, and Mg that is one of no more than about: 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0508] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 210 within the device 200, may have an initial sticking probability against the deposition of a deposited material 731 of one of between about: 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, 0.08-0.0008, 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0.0003, 0.02-0.0005, 0.02-0.0008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01-0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.008-0.0001, 0.008-0.0003, 0.008-0.0005,0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008, and 0.005-0.001.

[0509] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 210 within the device 200, may have an initial sticking probability against the deposition of a plurality of deposited materials 731 that is no more than a threshold value. In some non-limiting examples, such threshold value may be one of about: 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, and 0.001.

[0510] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 210 within the device 200, may have an initial sticking probability that is no more than such threshold value against the deposition of a plurality of deposited materials 731 selected from at least one of: Ag, Mg, Yb, Cd, and Zn. In some non-limiting examples, the patterning coating 210 may exhibit an initial sticking probability of no more than such threshold value against the deposition of a plurality of deposited materials 731 selected from at least one of: Ag, Mg, and Yb.

[0511] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 210 within the device 200, may exhibit an initial sticking probability against the deposition of a first deposited material 731 of, including without limitation, below, a first threshold value, and an initial sticking probability against the deposition of a second deposited material 731 of, including without limitation, below, a second threshold value. In some nonlimiting examples, the first deposited material 731 may be Ag, and the second deposited material 731 may be Mg. In some non-limiting examples, the first deposited material 731 may be Ag, and the second deposited material may be Yb. In some non-limiting examples, the first deposited material 731 may be Yb, and the second deposited material 731 may be Mg. In some non-limiting examples, the first threshold value may exceed the second threshold value.

[0512] In some non-limiting examples, there may be scenarios calling for providing a patterning coating 210 for causing formation of a discontinuous layer 260 of at least one particle structure 250, upon the patterning coating 210 being subjected to a vapor flux 732 of a deposited material 731. In some non-limiting examples, the patterning coating 210 may exhibit a substantially low initial sticking probability such that a closed coating 240 of the deposited material 731 may be formed in the second portion 202, which may be substantially devoid of the patterning coating 210, while the discontinuous layer 260 of at least one particle structure 250 having at least one characteristic may be formed in the first portion 201 on the patterning coating 210. In some non-limiting examples, there may be scenarios calling for formation of a discontinuous layer 260 of at least one particle structure 250 of a deposited material 731, which may be, in some non-limiting examples, of one of: a metal, and a metal alloy, in the second portion 202, while depositing a closed coating 240 of the deposited material 731 having a thickness of, for example, one of no more than about: 100 nm, 50 nm, 25 nm, and 15 nm. In some non-limiting examples, an amount of the deposited material 731 deposited as a discontinuous layer 260 of at least one particle structure 250 in the first portion 201 may correspond to one of between about: 1-50%, 2-25%, 5-20%, and 7-10% of the amount of the deposited material 731 deposited as a closed coating 240 in the second portion 202, which in some non-limiting examples may correspond to a thickness of one of no more than about: 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0513] In some non-limiting examples, there may be a positive correlation between the initial sticking probability of at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, against the deposition of the deposited material 731, and an average layer thickness of the deposited material 731 thereon.Transmittance

[0514] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may have a transmittance for light of at least athreshold transmittance value, after being subjected to a vapor flux 732 of the deposited material 731, including without limitation, Ag.

[0515] In some non-limiting examples, such transmittance may be measured after exposing the exposed layer surface 11 of at least one of: the patterning coating 210 and the patterning material 611, formed as a thin film, to a vapor flux 732 of the deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, under typical conditions that may be used for depositing an electrode of an opto-electronic device 300, which in some non-limiting examples, may be a cathode of an organic light-emitting diode (OLED) device 300.

[0516] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to the vapor flux 732 of the deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, may comprise: maintaining a vacuum pressure at a reference pressure, including without limitation, of one of about: 10'4Torr and 10'5Torr; the vapor flux 732 of the deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, being substantially consistent with a reference deposition rate, including without limitation, of about 1 angstrom (A) / sec, which in some non-limiting examples, may be monitored using a QCM; the vapor flux 732 of the deposited material 731 being directed toward the exposed layer surface 11 at an angle that is substantially close to normal to a plane of the exposed layer surface 11 ; the exposed layer surface 11 being subjected to the vapor flux 732 of the deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, until a reference average layer thickness, including without limitation, of about 15 nm, is reached, and upon such reference average layer thickness being attained, the exposed layer surface 11 not being further subjected to the vapor flux of the deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg.

[0517] In some non-limiting examples, the exposed layer surface 11 being subjected to the vapor flux 732 of the deposited material 731, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, may be substantially at room temperature (e.g. about 25°C). In some non-limiting examples, the exposed layer surface 11 being subjected to the vapor flux 732 of the deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, may be positioned about 65 cm away from an evaporation source by which the deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, is evaporated.

[0518] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in the visible spectrum, which may be one of at least about: 460 nm, 500 nm, 550 nm, and 600 nm. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in at least one of: the IR, and NIR, spectrum. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength of one of about: 700 nm, 900 nm, and 1,000 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of incident EM power that may be transmitted through a sample. In some non-limiting examples, the threshold transmittance value may be one of at least about: 60%, 65%, 70%, 75%, 80%, 85%, and 90%.

[0519] It would be appreciated by a person having ordinary skill in the relevant art that high transmittance may generally indicate an absence of a closed coating 240 of the deposited material 731, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg. On the other hand, low transmittance may generally indicate presence of a closed coating 240 of the deposited material 731, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, since metallic thin films, particularly when formed as a closed coating 240, may exhibit a high degree of absorption of light.

[0520] A series of samples was fabricated to measure the transmittance of an example material, as well as to visually observe whether a closed coating 240 of Ag was formed on the exposed layer surface 11 of such example material. Each sample was prepared by depositing,on a glass substrate 10, an approximately 50 nm thick coating of an example material, then subjecting the exposed layer surface 11 of the coating to a vapor flux 732 of Ag at a rate of about 1 A / sec until a reference layer thickness of about 15 nm was reached. Each sample was then visually analyzed and the transmittance through each sample was measured.

[0521] The molecular structures of the example materials used in the samples herein are set out in Table 1 below:Table 1Material Molecular Structure / NameHT211 / \\ .j- / A- \ \ ' J $X / / •< X- / — \ > .-. / A & < \' / \ _ A / $ / ■HT01A w-M.. ryV A A5v-. / pG Q TAZ N— NA J / 7 \\ Jk / AABalqf0x- \ \ / = j Z . ” Liq f f\ / 1V $ o, v a— — Example Material 1\jExample Material 2 / \„~V / ~x, 7 V# \ F i O QFExample Material 3r F . P| F TL FJ nExample Material 4 FF FFF^F FA<Fry AzFAFFAF FFAAF^ZFryFVFFAF\F9 Z ?FF F F F F F F0N P / I I I I I I I F F F F F F FO-Px’'P-O U i U UFfI I I I I I IzMF F F F F F F0FFV FAAFx / S FAFFAFFAFFAFFAFFAFFAFA / S FA / FExample Material 5 E F _V f0^ ,0 CF3A I I| CHHXL jnExample Material 6 <fF3(CF2)5I<fH2CH3^H3\ / |H2\ <fH3CH3-Si-O-4-^i— CH3CH3\CH3 / ,\ CH3 / CH3Example Material 7 •X| r* F* 1f r*** F r* J\ 4’ | d J) | 4'XF FJ nrgvExample Material 8 :!>.& OF:,F:;C Q< \ k I' \ XkExample Material 9^H2CH3 / (^H2\ <^H3H3C— Si— O-4— ^i— O-4-^i-CH3CH3\ CH3 / nCH3

[0522] Those having ordinary skill in the relevant art will appreciate that samples having little to no deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, present thereon may be substantially transparent, while samples with substantial amounts of at least one of: a metal, and an alloy, deposited thereon, including without limitation, as a closed coating 240, may in some nonlimiting examples, exhibit a substantially reduced transmittance. Accordingly, the performance of various example coatings as a patterning coating 210 may be assessed by measuring transmission through the samples, which may be inversely correlated to at least one of: an amount, and an average layer thickness, of the deposited material 731, including withoutlimitation, at least one of: a metal, and an alloy, including without limitation, in the form of at least one of Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, being deposited thereon, since metallic thin films, including without limitation, when formed as a closed coating 240, may exhibit a high degree of absorption of light.

[0523] The samples in which a substantially closed coating 240 of a deposited material 731 , in the form of Ag, had formed were visually identified, and the presence of such closed coating 240 in these samples was further confirmed by measurement of transmittance therethrough, which showed transmittance of no more than about 50% at a wavelength of about 460 nm.

[0524] In addition, for samples in which the absence of formation of a closed coating 240 of a deposited material 731, in the form of Ag, was identified, the absence of such closed coating 240 in these samples was further confirmed by measurement of EM transmittance therethrough, which showed transmittance (of light at a wavelength of about 460 nm) of at least about 70%.

[0525] The results are summarized in Table 2 below:Table 2Material Closed Coating of Ag?HT211 PresentHT01 PresentTAZ PresentBalq PresentLiq PresentExample Material 1 PresentExample Material 2 PresentExample Material 3 Not PresentExample Material 4 Not PresentExample Material 5 Not PresentExample Material 6 Not PresentExample Material 7 Not PresentExample Material 8 Not PresentExample Material 9 Present

[0526] Based on the foregoing, it was found that the materials used in the first 7 samples (HT211 to Example Material 2) and Example Material 9 in Tables 1 and 2 may have reduced applicability in some scenarios for inhibiting the deposition of the deposited material 731 thereon, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg.

[0527] On the other hand, it was found that Example Material 3 to Example Material 8 may have applicability in some scenarios, to act as a patterning coating 210 for inhibiting the deposition of the deposited material 731 including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, thereon.Deposition Contrast

[0528] In some non-limiting examples, a material, including without limitation, a patterning material 611, that may function as an NIC for a given deposited material 731 that may comprise at least one of: a metal, and an alloy, including without limitation, at least one of: Mg, Ag, and MgAg, may have a substantially high deposition contrast when deposited on a substrate 10, such that the deposited material 731 tends not to be deposited, in some nonlimiting examples, as a closed coating 240, where the patterning coating 210 has been deposited.

[0529] In some non-limiting examples, if a substrate 10 tends to act as a nucleationpromoting coating (NPC) 1320, and a portion thereof is coated with a material, including without limitation, a patterning material 611, that may tend to function as an NIC against deposition of a deposited material 731, including without limitation, at least one of: a metal,and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, a coated portion (first portion 201) and an uncoated portion (second portion 202) may tend to have different at least one of: initial sticking probabilities, and nucleation rates, such that the deposited material 731 deposited thereon may tend to have different average film thicknesses.

[0530] As used herein, a quotient of an average film thickness of the deposited material 731 deposited in the second portion 202 divided by the average film thickness of the deposited material in the first portion 201 in such scenario may be generally referred to as a deposition contrast. Thus, if the deposition contrast is substantially high, the average film thickness of the deposited material 731 in the second portion 202 may be substantially greater than the average film thickness of the deposited material 731 in the first portion 201.

[0531] In some non-limiting examples, a material, including without limitation, a patterning material 611, that may function as an NIC for a given deposited material 731, may have a substantially high deposition contrast when deposited on a substrate 10.

[0532] In some non-limiting examples, there may be a negative correlation between the initial sticking probability of at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, against the deposition of the deposited material 731 and a deposition contrast thereof, that is, a low initial sticking probability may be highly correlated with a high deposition contrast.

[0533] In some non-limiting examples, if the deposition contrast is substantially high, there may be little to no deposited material 731 deposited in the first portion 201, when there is sufficient deposition of the deposited material 731 to form a closed coating 240 thereof in the second portion 202.

[0534] In some non-limiting examples, if the deposition contrast is substantially low, there may be a discontinuous layer 260 of at least one particle structure 250 of the deposited material 731 deposited in the first portion 201, when there is sufficient deposition of the deposited material 731 to form a closed coating 240 in the second portion 202.

[0535] In some non-limiting examples, there may be scenarios calling for the formation of a discontinuous layer 260 of at least one particle structure 250 of the deposited material 731,in the first portion 201, when an average layer thickness of a closed coating 240 of the deposited material 731 in the second portion 202 is substantially small, including without limitation, one of no more than about: 100 nm, 50 nm, 25 nm, and 15 nm, including without limitation, the formation of nanoparticles (NPs) in the first portion 201, where absorption of light by such NPs is called for, including without limitation, to protect an underlying layer 1310 from light having a wavelength of no more than about 460 nm.

[0536] In some non-limiting examples, in such scenarios, there may be applicability for a deposition contrast of one of between about: 2-100, 4-50, 5-20, and 10-15.

[0537] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially low deposition contrast against deposition of a deposited material 731, may have reduced applicability in some scenarios calling for substantially high deposition contrast, including without limitation, where the average layer thickness of the deposited material 731 in the first portion 201 is large, including without limitation, one of at least about: 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm.

[0538] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially low deposition contrast against deposition of a deposited material 731, may have reduced applicability in some scenarios calling for substantially high deposition contrast, including without limitation, scenarios calling for at least one of: the substantial absence of a closed coating 240, and a high density of, particle structures 250 in the first portion 201, including without limitation, when an average layer thickness of the deposited material 731 in the second portion 202 is large, including without limitation, one of at least about: 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm, including without limitation, in some scenarios calling for the substantial absence of absorption of light in at least one of the visible spectrum and the NIR spectrum, including without limitation, scenarios calling for an increased transparency to light having a wavelength that is at least about 460 nm.

[0539] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially low deposition contrast against the deposition of a deposited material 731, may have applicability in some scenarios calling for at least one of: a discontinuous layer 260 of, and a low density of, particle structures 250 of the deposited material 731 in the first portion 201, when an average layer thickness of a closed coating 240 of the deposited material 731 in the second portion 202 is substantially high, including withoutlimitation, one of at least about: 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm. In some non-limiting examples, a deposition contrast of one of between about: 2-100, 4-50, 5-20, and 10-15 may have applicability in some scenarios when an average layer thickness of the deposited material 731 in the second portion 202 is substantially high, including without limitation, one of at least about: 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm.

[0540] In some non-limiting examples, a material, including without limitation, a patterning material 611, may tend to have a substantially low deposition contrast if the initial sticking probability of such material against deposition of at least one of: a metal, and an alloy, including without limitation, at least one of: Mg, Ag, and MgAg, is substantially high.Surface Energy

[0541] A characteristic surface energy, as used herein, in some non-limiting examples, with respect to a material, may generally refer to a surface energy determined from such material.

[0542] In some non-limiting examples, a characteristic surface energy may be measured from a surface formed by the material deposited (coated) in a thin film form.

[0543] Various methods and theories for determining the surface energy of a solid are known.

[0544] In some non-limiting examples, a surface energy may be calculated (derived) based on a series of contact angle measurements, in which various liquids may be brought into contact with a surface of a solid to measure the contact angle between the liquid-vapor interface and the surface. In some non-limiting examples, a surface energy of a solid surface may be equal to the surface tension of a liquid with the highest surface tension that completely wets the surface.

[0545] In some non-limiting examples, the critical surface tension of a surface may be determined according to the Zisman method, as further detailed in W. A. Zisman, Advances in Chemistry (1964), pp. 1-51.

[0546] In some non-limiting examples, a characteristic surface energy of a material, including without limitation, a patterning material 611, in a coating, including without limitation, a patterning coating 210, may be determined by depositing the material as asubstantially pure coating (e.g. a coating formed by a substantially pure material) on a substrate 10 and measuring a contact angle thereof with an applicable series of probe liquids.

[0547] In some non-limiting examples, a Zisman plot may be used to determine a maximum value of surface tension that would result in complete wetting (i.e. a contact angle 0c of 0°) of the surface.

[0548] A material which has applicability for use in providing the patterning coating 210 may generally have a low surface energy when deposited as a thin film (coating) on a surface. In some non-limiting examples, a material with a low surface energy may exhibit low intermolecular forces.

[0549] Without wishing to be bound by any particular theory, it is now postulated that a material with a substantially high surface energy may have applicability at least in some applications that call for a high temperature reliability.

[0550] Without wishing to be bound by any particular theory, it has now been found that a patterning coating 210 comprising a material which, when deposited as a thin film, exhibits a substantially high surface energy, may, in some non-limiting examples, form a discontinuous layer 260 of at least one particle structure 250 of a deposited material 731 in the first portion 201, and a closed coating 240 of the deposited material 731 in the second portion 202, including without limitation, in cases where the thickness of the closed coating is, by way of non-limiting example, one of no more than about: 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0551] In some non-limiting examples, a series of samples was fabricated to measure the critical surface tension of the surfaces formed by the various materials. The results of the measurement are summarized in Table 3:Table 3Material Critical Surface Tension (dynes / cm)HT211 25.6HT01 > 24TAZ 22.4Balq 25.9Liq 24Example Material 1 26.3Example Material 2 24.8Example Material 3 20Example Material 4 12.4Example Material 5 15.9Example Material 6 21.1Example Material 7 13.1Example Material 8 21Example Material 9 18.9

[0552] Based on the foregoing measurement of the critical surface tension in Table 3 and the previous observation regarding one of: the presence, and absence, of a substantially closed coating 240 of a deposited material 731 , in the form of Ag, it was found that materials that form substantially low surface energy surfaces when deposited as a coating, including without limitation, a patterning coating 210, which in some non-limiting examples, may be those having a critical surface tension of one of between about: 13-20 dynes / cm, and 13-19 dynes / cm, may have applicability for forming the patterning coating 210 to inhibit deposition of a deposited material 731 thereon, including without limitation, at least one of Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg.

[0553] Without wishing to be bound by any particular theory, it may be postulated that materials that form a surface having a surface energy lower than, by way of non-limiting example, about 13 dynes / cm, may have reduced applicability as a patterning material 611 in some scenarios, as such materials may exhibit at least one of: substantially poor adhesion to layer(s) surrounding such materials, a low melting point, and a low sublimation temperature.

[0554] In some non-limiting examples, a material, including without limitation, a patterning material 611 that may tend to function as an NIC for a deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Mg, Ag, and Ag-containing materials, including without limitation, MgAg, may tend to exhibit a substantially low surface energy when deposited as a thin film (coating) on an exposed layer surface 11.

[0555] In some non-limiting examples, a material, including without limitation, a patterning material 611, may tend to exhibit a substantially low surface energy when deposited as a thin film (coating) on an exposed layer surface 11.

[0556] In some non-limiting examples, a material, including without limitation, a patterning material 611, with a substantially low surface energy may tend to exhibit substantially low inter-molecular forces.

[0557] In some non-limiting examples, there may be scenarios calling for a patterning material 611 that has a substantially low surface energy that is not unduly low.

[0558] In some non-limiting examples, a material, including without limitation, a patterning material 611, with a substantially high surface energy may have applicability for some scenarios to detect a film of such material using optical techniques.

[0559] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially high surface energy may have applicability for some scenarios that call for substantially high temperature reliability.

[0560] In some non-limiting examples, a material, including without limitation, a patterning material 611, that may function as an NIC for at least one of: a metal, and an alloy, including without limitation, at least one of Mg, Ag, and Ag-containing materials, including without limitation, MgAg, having a substantially high surface energy may have applicability in some scenarios calling for a discontinuous layer 260 of particle structures 250 of at least one of: the metal, and the alloy, in the first portion 201, when an average layer thickness of a continuous coating 240 of at least one of: the metal, and the alloy, in the second portion 202 issubstantially low, including without limitation, one of no more than about: 100 nm, 50 nm, 25 nm, and 15 nm.

[0561] In some non-limiting examples, a material, including without limitation, a patterning material 611, that may function as an NIC for a deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, having a substantially low surface energy may have applicability in some scenarios calling for one of: a discontinuous layer 260 of, and a low density of, particle structures 250 of the deposited material 731 in the first portion 201, when an average layer thickness of a closed coating 240 of the deposited material 731 in the second portion 202 is substantially high, including without limitation, one of at least about: 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm.

[0562] In some non-limiting examples, the surface of at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, comprising the compounds described herein, may exhibit a surface energy of one of no more than about: 24 dynes / cm, 22 dynes / cm, 20 dynes / cm, 18 dynes / cm, 16 dynes / cm, 15 dynes / cm, 13 dynes / cm, 12 dynes / cm, and 11 dynes / cm.

[0563] In some non-limiting examples, the surface values in various non-limiting examples herein may correspond to such values measured at around normal temperature and pressure (NTP), which may correspond to a temperature of 20°C, and an absolute pressure of 1 atm.

[0564] In some non-limiting examples, the surface energy may be one of at least about: 6 dynes / cm, 7 dynes / cm, and 8 dynes / cm.

[0565] In some non-limiting examples, the surface energy may be one of between about: 10-20 dynes / cm, and 13-19 dynes / cm.TemperatureGlass Transition Temperature

[0566] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: afilm, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may have a glass transition temperature that is one of: one of at least about: 300°C, 150°C, and 130°C, and one of no more than about: 30°C, 0°C, -30°C, and -50°C.Sublimation Temperature

[0567] In some non-limiting examples, a material, including without limitation, a patterning material 611, having substantially low inter- molecular forces may tend to exhibit a substantially low sublimation temperature.

[0568] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially low sublimation temperature, may have reduced applicability for manufacturing processes that may call for substantially precise control of an average layer thickness in a deposited film of the material.

[0569] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a sublimation temperature that is one of no more than about: 140°C, 120°C, 110°C, 100°C and 90°C, may tend to encounter constraints on at least one of: the deposition rate and the average layer thickness, of a film comprising such material that may be deposited using known deposition methods, including without limitation, vacuum thermal evaporation.

[0570] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially high sublimation temperature may have applicability in some scenarios calling for substantially high precision in the control of the average layer thickness of a film comprising such material.

[0571] In some non-limiting examples, the patterning material may have a sublimation temperature of one of between about: 100-320°C, 120-300°C, 140-280°C, and 150-250°C. In some non-limiting examples, such sublimation temperature may allow the patterning material 611 to be substantially readily deposited as a coating using PVD.

[0572] In some non-limiting examples, a material with substantially low intermolecular forces may exhibit a substantially low sublimation temperature.

[0573] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially low sublimation temperature, may have reducedapplicability for manufacturing processes that may call for substantially precise control of an average layer thickness of a closed coating 240 of the deposited material 731.

[0574] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a sublimation temperature that is one of no more than about: 140°C, 120°C, 110°C, 100°C and 90°C, may tend to encounter constraints on at least one of: the deposition rate and the average layer thickness, of a film comprising such material that may be deposited using known deposition methods, including without limitation, vacuum thermal evaporation.

[0575] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially high sublimation temperature may have applicability in some scenarios calling for substantially high precision in the control of the average layer thickness of a film comprising such material.

[0576] The sublimation temperature of a material, including without limitation, a patterning material 611, may be determined using various methods apparent to those having ordinary skill in the relevant art, including without limitation, by heating the material in an evaporation source under a substantially high vacuum environment, in some non-limiting examples, about 10'4Torr, and including without limitation, in a crucible and by determining a temperature that may be attained, to at least one of:• observe commencement of the deposition of the material onto an exposed layer surface 11 on a QCM mounted a fixed distance from the crucible;• observe a specific deposition rate, in some non-limiting examples, 0.1 A / sec, onto an exposed layer surface 11 on a QCM mounted a fixed distance from the crucible; and • reach a threshold vapor pressure of the material, in some non-limiting examples, one of about” 10'4and 10'5Torr.

[0577] In some non-limiting examples, the QCM may be mounted about 65 cm away from the crucible for the purpose of determining the sublimation temperature.

[0578] In some non-limiting examples, the patterning material 611 may have a sublimation temperature of one of between about: 100-320°C, 100-300°C, 120-300°C, 100- 250°C, 140-280°C, 120-230°C, 130-220°C, 140-210°C, 140- 200°C, 150-250°C, and 140- 190°C.Melting Point

[0579] In some non-limiting examples, a material, including without limitation, a patterning material 611, with substantially low inter- molecular forces may tend to exhibit a substantially low melting point.

[0580] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially low melting point may have reduced applicability in some scenarios calling for substantial temperature reliability for temperatures of one of no more than about: 60°C, 80°C, and 100°C, in some non-limiting examples, because of changes in physical properties of such material at operating temperatures that approach the melting point.

[0581] In some non-limiting examples, a material with a melting point of about 120°C may have reduced applicability in some scenarios calling for substantially high temperature reliability, including without limitation, of at least about: 100 °C.

[0582] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially high melting point may have applicability in some scenarios calling for substantially high temperature reliability.

[0583] In some non-limiting examples, at least one of: the patterning coating 210 and the compound thereof may have a melting temperature that is one of at least about: 90°C, 100°C, 110cC, 120°C, 140°C, 150°C, and 180°C.Cohesion Energy

[0584] According to Young’s equation (Equation 13) the cohesion energy (fracture toughness / cohesion strength) of a material may tend to be proportional to its surface energy (cf. Young, Thomas (1805) “An essay on the cohesion of fluids”, Philosophical Transactions of the Royal Society of London, 95: 65-87).

[0585] According to Lindemann’s criterion, the cohesion energy of a material may tend to be proportional to its melting temperature (cf. Nanda, K.K., Sahu, S.N, and Behera, S.N (2002), “Liquid-drop model for the size-dependent melting of low-dimensional systems” Phys. Rev. A. 66 (1): 013208).

[0586] In some non-limiting examples, a material, including without limitation, a patterning material 611, having substantially low inter- molecular forces may tend to exhibit a substantially low cohesion energy.

[0587] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially low cohesion energy may have reduced applicability in some scenarios that call for substantial fracture toughness, including without limitation, in a device 200 that may tend to undergo at least one of: sheer, and bending, stress during at least one of: manufacture, and use, as such material may tend to crack (fracture) in such scenarios. In some non-limiting examples, a material, including without limitation, a patterning material 611, having a cohesion energy of no more than about 30 dynes / cm may have reduced applicability in some scenarios in a device 200 manufactured on a flexible substrate 10.

[0588] In some non-limiting examples, a material, including without limitation, a patterning material 611, that has a substantially high cohesion energy, may have applicability in some scenarios calling for substantially high reliability under at least one of: sheer, and bending, stress, including without limitation, a device 200 manufactured on a flexible substrate 10.

[0589] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a surface energy that is substantially low but is not unduly low may have applicability in some scenarios that call for substantial reliability under at least one of: sheer, and bending, stress, including without limitation, a device 200 manufactured on a flexible substrate 10.Optical / Band Gap

[0590] In the present disclosure, a semiconductor material may be described as a material that generally exhibits a band gap. In some non-limiting examples, the band gap may be formed between a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbital (LUMO) of the semiconductor material. Semiconductor materials may thus tend to exhibit electrical conductivity that is substantially no more than that of a conductive material (including without limitation, at least one of: a metal, and an alloy), but that is substantially at least as great as an insulating material (including without limitation, glass). Insome non-limiting examples, the semiconductor material may comprise an organic semiconductor material. In some non-limiting examples, the semiconductor material may comprise an inorganic semiconductor material.

[0591] In some non-limiting examples, an optical gap of a material, including without limitation, a patterning material 611, may tend to correspond to the H0M0-LUM0 gap of the material.

[0592] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially large / wide optical (H0M0-LUM0 gap) may tend to exhibit substantially weak, including without limitation, substantially no,photo luminescence in at least one of: the deep B(lue) region of the visible spectrum, the near UV spectrum, the visible spectrum, and the NIR spectrum.

[0593] In some non-limiting examples, a material having a substantially small H0M0-LUMO gap may have applicability in some scenarios to detect a film of the material using optical techniques.

[0594] In some non-limiting examples, an optical gap of the patterning material 611 may be wider than a photon energy of the light emitted by the source, such that the patterning material 611 does not undergo photoexcitation when subjected to such light.Refractive Index and Extinction Coefficient

[0595] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may have a low refractive index.

[0596] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may have a refractive index for light at a wavelength of 550 nm that may be one of no more than about: 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32, and 1.3.

[0597] In some non-limiting examples, the refractive index of the patterning coating 210 may be no more than about 1.7. In some non-limiting examples, the refractive index of the patterning coating 210 may be one of no more than about: 1.6, 1.5, 1.4, and 1.3. In some nonlimiting examples, the refractive index of the patterning coating 210 may be one of between about: 1.2-1.6, 1.2-1.5, and 1.25-1.45. As further described in various non-limiting examples above, the patterning coating 210 exhibiting a substantially low refractive index may have application in some scenarios, to enhance at least one of: the optical properties, and performance, of the device 200, including without limitation, by enhancing outcoupling of light emitted by the opto-electronic device 300.

[0598] Without wishing to be bound by any particular theory, it has been observed that providing the patterning coating 210 having a substantially low refractive index may, at least in some devices 200, enhance transmission of external light through the second portion 202 thereof. In some non-limiting examples, devices 200 including an air gap therein, which may be arranged near to the patterning coating 210, may exhibit a substantially high transmittance when the patterning coating 210 has a substantially low refractive index relative to a similarly configured device 200 in which such low- index patterning coating 210 was not provided.

[0599] In some non-limiting examples, a series of samples was fabricated to measure the refractive index at a wavelength of 550 nm for the coatings formed by some of the various example materials. The results of the measurement are summarized in Table 4 below:Table 4Material Refractive IndexHT211 1.76HT01 1.80TAZ 1.69Balq 1.69Liq 1.64Example Material 2 1.72Example Material 3 1.37Example Material 5 1.38Example Material 7 1.3Example Material 8 1.37

[0600] Based on the foregoing measurement of refractive index in Table 4, and the previous observation regarding one of: the presence, and absence, of a substantially closed coating 240 of Ag in Table 4, it was found that materials that form a low refractive index coating, which in some non-limiting examples, may be those having a refractive index of one of no more than about: 1.4 and 1.38, may have applicability in some scenarios for forming the patterning coating 210 to substantially inhibit deposition of a deposited material 731 thereon, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and an Ag-containing material, including without limitation, MgAg.

[0601] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may have a low refractive index.

[0602] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may have a refractive index for light at a wavelength of 550 nm that may be one of no more than about: 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32, and 1.3.

[0603] In some non-limiting examples, the patterning coating 210 may be at least one of: substantially transparent, and light-transmissive.

[0604] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: afilm, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 210 within the device 200, may have an extinction coefficient that may be no more than about 0.01 for photons at a wavelength that is one of at least about: 600 nm, 500 nm, 460 nm, 420 nm, and 410 nm.

[0605] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may have an extinction coefficient that may be one of at least about: 0.05, 0.1, 0.2, and 0.5 for light at a wavelength that is one of no more than about: 400 nm, 390 nm, 380 nm, and 370 nm.

[0606] In this way, at least one of: the patterning coating 210, and the patterning material 611, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may absorb light in the UVA spectrum incident upon the device 200, thereby reducing a likelihood that light in the UVA spectrum may impart constraints in terms of at least one of: device performance, device stability, device reliability, and device lifetime.

[0607] In some non-limiting examples, the patterning coating 210 may exhibit an extinction coefficient of one of no more than about: 0.1, 0.08, 0.05, 0.03, and 0.01 in the visible light spectrum.Photoluminescence. Absorption and Other Optical Effects

[0608] In some non-limiting examples, photoluminescence of at least one of: a coating, and a material may be observed through a photoexcitation process. In a photoexcitation process, at least one of: the coating, and the material, may be subjected to light emitted by a source, including without limitation, a UV lamp.

[0609] When the emitted light is absorbed by at least one of: the coating, and the material, the electrons thereof may be temporarily excited. Following excitation, at least one relaxation process may occur, including without limitation, at least one of: fluorescence and phosphorescence, in which light may be emitted from at least one of: the coating, and the material.

[0610] The light emitted from at least one of: the coating, and the material, during such process may be detected, for example, by a photodetector, to characterize the photoluminescence properties of at least one of: the coating, and the material.

[0611] As used herein, a wavelength of photoluminescence, in relation to at least one of: the coating, and the material, may generally refer to a wavelength of light emitted by such at least one of: the coating, and the material, as a result of relaxation of electrons from an excited state. As would be appreciated by a person having ordinary skill in the relevant art, a wavelength of light emitted by at least one of: the coating, and the material, as a result of the photoexcitation process may, in some non-limiting examples, be longer than a wavelength of radiation used to initiate photoexcitation. Photoluminescence may be detected using various techniques known in the art, including, without limitation, fluorescence microscopy.

[0612] In some non-limiting examples, the optical gap of the various coatings / materials may correspond to an energy gap of the coating / material from which light is one of: absorbed, and emitted, during the photoexcitation process.

[0613] In some non-limiting examples, photoluminescence may be detected by subjecting the coating / material to light having a wavelength corresponding to the UV spectrum, such as in some non-limiting examples, one of: UVA, and UVB. In some nonlimiting examples, light for causing photoexcitation may have a wavelength of about 365 nm.

[0614] In some non-limiting examples, the patterning material 611 may not substantially exhibit photoluminescence at any wavelength corresponding to the visible spectrum.

[0615] In some non-limiting examples, the patterning material 611 may not exhibit photo luminescence upon being subjected to light having a wavelength of one of at least about: 300 nm, 320 nm, 350 nm, and 365 nm.

[0616] As used herein, at least one of: the coating, and the material, that is photoluminescent, may be one that exhibits photoluminescence at a wavelength when irradiated with an excitation radiation at a certain wavelength. In some non-limiting examples, at least one of: the coating, and the material, that is photoluminescent, may exhibit photoluminescence at a wavelength that exceeds about 365 nm, which is a wavelength of the radiation sourcefrequently used in fluorescence microscopy, upon being irradiated with an excitation radiation having a wavelength of 365 nm.

[0617] At least one of: the coating, and the material, that is photoluminescent, may be detected on a substrate 10 using standard optical techniques including without limitation, fluorescence microscopy, which may establish the presence of such at least one of: the coating, and the material.

[0618] In some non-limiting examples, a coating, including without limitation, a patterning coating 210, may exhibit photoluminescence, including without limitation, by comprising a material that exhibits photoluminescence.

[0619] In some non-limiting examples, the presence of such patterning coating 210 may be detected (observed) using routine characterization techniques such as fluorescence microscopy upon deposition of the patterning coating 210.

[0620] In some non-limiting examples, a coating, including without limitation, a patterning coating 210, may exhibit photoluminescence at a wavelength corresponding to at least one of: the UV spectrum, and visible spectrum, including without limitation, by comprising a material that exhibits photoluminescence. In some non-limiting examples, photoluminescence may occur at a wavelength (range) corresponding to the UV spectrum, including, without limitation, one of: the UVA spectrum, and UVB spectrum. In some nonlimiting examples, photoluminescence may occur at a wavelength (range) corresponding to the visible spectrum. In some non-limiting examples, photoluminescence may occur at a wavelength (range) corresponding to one of: deep B(lue) and near UV.

[0621] In some non-limiting examples, at least one of the materials of the patterning coating 210 that may exhibit photoluminescence may comprise at least one of: a conjugated bond, an aryl moiety, a donor-acceptor group, and a heavy metal complex.

[0622] In some non-limiting examples, a coating, including without limitation, a patterning coating 210, comprised of a material, including without limitation, a patterning material 611, having substantially weak to no photoluminescence (absorption) in a wavelength range of one of at least about: 365 nm, and 460 nm, may tend to not act as one of: a photoluminescent, and an absorbing, coating and may have applicability in some scenarioscalling for substantially high transparency in at least one of: the visible spectrum, and the NIR spectrum.

[0623] In some non-limiting examples, such material may tend to exhibit substantially low photoluminescence upon being subjected to light having a wavelength of about 365 nm, which is a wavelength of the radiation source frequently used in fluorescence microscopy. The presence of such materials, including without limitation, a patterning material 611, especially when deposited, in some non-limiting examples, as a thin film, may have reduced applicability in some scenarios calling for typical optical detection techniques, including without limitation, fluorescence microscopy. This may impose constraints in some scenarios in which such material may be selectively deposited, for example through an FMM, over part(s) of a substrate 10, as there may be some scenarios for determining, following the deposition of the material, the part(s) in which such materials are present.

[0624] In some non-limiting examples, a material with substantially low to no absorption at a wavelength that is one of at least about: 365 nm, and 460 nm, may have applicability in some scenarios calling for substantially high transparency in at least one of: the visible spectrum, and the NIR spectrum.

[0625] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may not substantially attenuate light passing therethrough, in at least the visible spectrum.

[0626] In some non-limiting examples, at least one of: the patterning coating 210, and the patterning material 611, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may not substantially attenuate light passing therethrough, in at least one of: the IR spectrum, and the NIR spectrum.

[0627] In this way, at least one of: the patterning coating 210, and the patterning material 611, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 210 within the device 200, may absorb light in the UVA spectrum incident upon the device 200, thereby reducing alikelihood that light in the UVA spectrum may impart constraints in terms of at least one of: device performance, device stability, device reliability, and device lifetime.

[0628] In some non-limiting examples, the patterning coating 210 may act as an optical coating.

[0629] In some non-limiting examples, the patterning coating 210 may modify at least one of: at least one property, and at least one characteristic, of light (including without limitation, in the form of photons) emitted by the device 200. In some non-limiting examples, the patterning coating 210 may exhibit a degree of haze, causing emitted light to be scattered. In some non-limiting examples, the patterning coating 210 may comprise a crystalline material for causing light transmitted therethrough to be scattered. Such scattering of light may facilitate enhancement of the outcoupling of light from the device 200 in some non-limiting examples. In some non-limiting examples, the patterning coating 210 may initially be deposited as a substantially non-crystalline, including without limitation, substantially amorphous, coating, whereupon, after deposition thereof, the patterning coating 210 may become crystallized and thereafter serve as an optical coupling.

[0630] In some non-limiting examples, the patterning material 611 may exhibit insignificant, including without limitation, no detectable, absorption when subjected to light having a wavelength of one of at least about: 300 nm, 320 nm, 350 nm, and 365 nm.

[0631] In some non-limiting examples, the patterning coating 210 may not exhibit any substantial light absorption at any wavelength corresponding to the visible spectrum.Average Laver Thickness

[0632] In some non-limiting examples, an average layer thickness of the patterning coating 210 may be one of no more than about: 10 nm, 8 nm, 7 nm, 6 nm, and 5 nm.Weight

[0633] Without wishing to be bound by any particular theory, it may be postulated that, for compounds that are adapted to form surfaces with substantially low surface energy, there may be scenarios calling for, in at least some applications, the molecular weight of suchcompounds to be one of between about: 800-3,000 g / mol, 900-2,000 g / mol, 900-1,800 g / mol, and 900-1,600 g / mol.

[0634] In some non-limiting examples, the molecular weight of the compound of the at least one patterning material 611 may be no more than about 5,000 g / mol. In some nonlimiting examples, the molecular weight of the compound may be one of no more than about: 4,500 g / mol, 4,000 g / mol, 3,800 g / mol, and 3,500 g / mol.

[0635] In some non-limiting examples, the molecular weight of the compound of the at least one patterning material 611 may be at least about 800 g / mol. In some non-limiting examples, the molecular weight of the compound may be one of at least about: 1,500 g / mol, 1,700 g / mol, 2,000 g / mol, 2,200 g / mol, and 2,500 g / mol.

[0636] In some non-limiting examples, the molecular weight of the compound may be one of between about: 800-3,000 g / mol, 900-2,000 g / mol, 900-1,800 g / mol, and 900-1,600 g / mol.

[0637] In some non-limiting examples, a percentage of the molar weight of such compound that may be attributable to the presence of F atoms, may be one of between about: 40-90%, 45-85%, 50-80%, 55-75%, and 60-75%. In some non-limiting examples, F atoms may constitute a majority of the molar weight of such compound.Inter-Relationships Between Patterning Coating Attributes

[0638] Without wishing to be bound by any particular theory, it may be postulated that exposed layer surfaces 11 exhibiting low initial sticking probability with respect to the deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, Yb, Ag, Mg, and an Ag-containing material, including without limitation, MgAg, may exhibit high transmittance. Without wishing to be bound by any particular theory, it may be postulated that exposed layer surfaces 11 exhibiting high sticking probability with respect to the deposited material 731, including without limitation, at least one of: a metal, and an alloy, including without limitation, Yb, Ag, Mg, and an Ag-containing material, including without limitation, MgAg, may exhibit low transmittance.

[0639] In some non-limiting examples, a material, including without limitation, a patterning material 611, may tend to have a substantially high initial sticking probabilityagainst deposition of a deposited material, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and an Ag-containing material, including without limitation, MgAg, if the material has a substantially high surface energy.

[0640] In some non-limiting examples, a patterning material 611 that has a substantially low surface tension that is not unduly low, may have applicability in some scenarios calling for a substantially high melting point, including without limitation, between about 15-22 dynes / cm.

[0641] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a surface tension that is substantially low, but not unduly low, may have applicability in some scenarios that call for a substantially high sublimation temperature.

[0642] In some non-limiting examples, a coating, including without limitation, a patterning coating 210, comprised of a material, including without limitation, a patterning material 611, having a substantially low surface energy and a substantially high sublimation temperature may have application in some scenarios calling for substantially high precision in the control of the average layer thickness of a film comprising such material.

[0643] Without wishing to be bound by any particular theory, it may be postulated that materials that form an exposed layer surface 11 having a surface energy of no more than, in some non-limiting examples, about 13 dynes / cm, may have reduced applicability as a patterning material 611 in some scenarios, as such materials may exhibit at least one of: substantially low adhesion to layer(s) surrounding such materials, a substantially low melting point, and a substantially low sublimation temperature.

[0644] In some non-limiting examples, a patterning coating 210 having a substantially low surface energy and a substantially high melting point may have applicability in some scenarios calling for high temperature reliability. In some non-limiting examples, there may be challenges in achieving such a combination from a single material given that in some nonlimiting examples, a single material having a low surface energy may tend to exhibit a low melting point.

[0645] Without wishing to be bound by any particular theory, it may be postulated that such compounds, including without limitation, of at least one patterning material 611, may exhibit at least one property that may have applicability in some scenarios for forming at leastone of: a coating, and layer, having at least one of: a substantially high melting point, in some non-limiting examples, of at least 100°C, a substantially low surface energy, and a substantially amorphous structure, when deposited, in some non-limiting examples, using vacuum-based thermal evaporation processes.

[0646] In some non-limiting examples, a coating, including without limitation, a patterning coating 210, having a substantially low surface energy, a substantially high cohesion energy, and a substantially high melting point may have applicability in some scenarios that call for substantially high reliability under various conditions. In some non-limiting examples, there may be challenges in achieving such a combination from a single material, given that, in some non-limiting examples, a unitary material having a substantially low surface energy may tend to exhibit a substantially low cohesion energy and a substantially low melting point.

[0647] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially low surface energy and a substantially high cohesion energy may have applicability in some scenarios that call for substantially high reliability under at least one of: sheer, and bending, stress. In some non-limiting examples, there may be challenges in achieving such a combination from a single material, given that, in some non-limiting examples, a thin film formed substantially of a single material having a substantially low surface energy may tend to exhibit a substantially low cohesion energy.

[0648] In some non-limiting examples, a material, including without limitation, a patterning material 611, having a substantially low surface energy may tend to exhibit at least one of: a substantially large, and substantially wide, optical gap. In some non-limiting examples, the optical gap of a material, including without limitation, a patterning material 611, may tend to correspond to the H0M0-LUM0 gap of the material.

[0649] In general, a material with a low surface energy may...

Claims

1. WHAT IS CLAIMED IS:

1. An opto-electronic device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by one of a plurality of lateral axes thereof, comprising:3.at least one emissive region comprising a first electrode, a second electrode, and at least one emissive region semiconducting layer therebetween, the first electrode disposed between the substrate and the at least one emissive region semiconducting layer; and4.at least one undercut partition, disposed laterally of and proximate to the at least one emissive region, providing a local discontinuity in a longitudinal aspect defined by a longitudinal axis substantially transverse to the plurality of lateral axes, the partition comprising a lower section and an upper section disposed thereon, a sidewall of the lower section being recessed relative to an edge of the upper section in the lateral aspect to define a sheltered region thereunder,5.at least one partition semiconducting layer disposed on an exposed layer surface of the upper section; and6.a conductive coating disposed on an exposed layer surface of the at least one partition semiconducting layer;7.wherein at least one of the: lateral aspect of the sheltered region, and longitudinal discontinuity, of the at least one partition imposes a discontinuity between at least one of the: second electrode, and at least one emissive region semiconducting layer, of one of the at least one emissive regions; with at least one of: a corresponding one of the: second electrode, and at least one emissive region semiconducting layer, of another one of the at least one emissive region, an auxiliary electrode proximate to the at least one partition, the conductive coating, and the at least one partition semiconducting layer.

2. The device of claim 1, further comprising at least one patterning coating disposed on at least one of: the second electrode, and the conductive coating.

3. The device of claim 1 or 2, wherein the at least one partition surrounds at least a part of the at least one emissive region.

4. The device of any one of claims 1 through 3, wherein the at least one partition extends substantially in a constant direction.

5. The device of any one of claims 1 through 4, wherein the at least one partition extends along at least a side of the at least one emissive region.

6. The device of any one of claims 1 through 5, wherein the at least one partition extends substantially parallel to a side of the at least one emissive region.

7. The device of any one of claims 1 through 6, wherein a gap extends in the lateral aspect between a first one and a second one of the at least one partition.

8. The device of claim 7, wherein the gap is disposed proximate to a vertex of the at least one emissive region.

9. The device of any one of claims 1 through 8, wherein the at least one partition lies between a first one of the at least one emissive region and a second one of the at least one emissive region in the lateral aspect.

10. The device of 1 through 8, wherein the at least one emissive region lies between a first one of the at least one partition and a second one of the at least one partition in the lateral aspect.

11. The device of any one of claims 1 through 8, wherein a non-emissive region lies between a first one of the at least one partition and a second one of the at least one partition in the lateral aspect.

12. The device of claim 11, wherein the first one of the at least one partition lies between the non-emissive region and the at least one emissive region.

13. The device of claim 11 or 12, wherein the non-emissive region forms a through-hole within a linear one of the at least one partition.

14. The device of any one of claims 1 through 13, wherein the sheltered region lies between the lower section and one of the at least one emissive regions.

15. The device of any one of claims 1 through 13, wherein the lower section lies between the sheltered region and one of the at least one emissive regions.

16. The device of any one of claims 1 through 15, wherein the upper section extends laterally beyond the lower section on at least one side thereof.

17. The device of claim 15, wherein the at least one side is proximate to one of the at least one emissive regions.

18. The device of claim 15 or 16, wherein the at least one side faces one of the at least one emissive regions.

19. The device of any one of claims 1 through 18, wherein the lower section is disposed on an exposed layer surface of a pixel definition layer (PDL).

20. The device of claim 19, wherein the lower section is disposed proximate to an uppermost layer of the PDL.

21. The device of claim 19 or 20, wherein a lowermost surface of the lower section is disposed below an uppermost layer of the PDL.

22. The device of any one of claims 19 through 21, wherein the upper section extends longitudinally above an uppermost layer of the PDL.

23. The device of any one of claims 19 through 22, wherein the lower section is disposed proximate to a lowermost layer of the PDL.

24. The device of any one of claims 19 through 23, wherein a bottom of the lower section is disposed below a lowermost layer of the PDL.

25. The device of any one of claims 19 through 23, wherein a bottom of the lower section is disposed on an exposed layer surface of an underlying layer on which the PDL is disposed.

26. The device of any one of claims 1 through 25, wherein a longitudinal extent of an uppermost layer of the upper section is proximate to an uppermost layer of the PDL.

27. The device of any one of claims 1 through 26, wherein the upper section extends downward toward the substrate on a side of the at least one partition other than where the sheltered region lies.

28. The device of any one of claims 1 through 27, wherein the auxiliary electrode lies below the lower section.

29. The device of any one of claims 1 through 28, wherein the lower section comprises the auxiliary electrode.

30. The device of any one of claims 1 through 29, wherein the lower section comprises a material of which the PDL is comprised.

31. The device of any one of claims 1 through 30, wherein the lower section comprises a photoresist material.

32. The device of any one of claims 1 through 30, wherein the lower section comprises a metallic material.

33. The device of claim 32, wherein the metallic material is titanium (Ti).

34. The device of claim 32 or 33, wherein the lower section passes through the PDL and a TFT insulating layer and is electrically coupled with an N-type TFT.

35. The device of any one of claims 32 through 34, wherein the first electrode of one of the at least one emissive regions is a common anode and the second electrode of one of the at least one emissive regions is an independent cathode.

36. The device of claim 35, wherein the deposited layer electrically couples the independent cathode with the lower section.

37. The device of 32, wherein the lower section is for detecting a touch on the conductive coating and is electrically coupled with a touch control circuit below a frontplane of the device.

38. The device of any one of claims 1 through 37, wherein the upper section comprises a photoresist material.

39. The device of any one of claims 1 through 38, wherein the upper section comprises a material of which the lower section is comprised.

40. The device of any one of claims 1 through 39, further comprising a deposited layer of a conductive deposited material disposed in the sheltered region.

41. The device of claim 40, wherein the deposited layer electrically couples the second electrode of the at least one emissive region with the auxiliary electrode.

42. The device of claim 40 or 41, wherein the deposited layer electrically couples the second electrode of the at least one emissive region with the conductive coating.

43. The device of any one of claims 1 through 42, wherein the upper section extends along the sidewall of the lower section.

44. The device of any one of claims 1 through 43, wherein the deposited layer extends around a part of the upper section that extends laterally beyond the lower section.

45. The device of any one of claims 1 through 44, wherein the deposited layer extends across a lower surface of the part of the upper section that extends laterally beyond the lower section.

46. The device of any one of claims 1 through 45, wherein the deposited layer is in contact with a part of a sidewall of the lower section.

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