Light-emitting substrate and display device

Abstract

The present disclosure relates to the technical field of display. Provided are a light-emitting substrate and a display device. The light-emitting substrate comprises: a base substrate (100), a first electrically conductive layer (1) and pads (3), wherein the first electrically conductive layer (1) is located on one side of the base substrate (100); the first electrically conductive layer (1) comprises a first body layer (11) and a first protective layer (12), which are stacked, the first protective layer (12) being located between the first body layer (11) and the base substrate (100); the first electrically conductive layer (1) comprises a first electrically conductive portion (01), the first electrically conductive portion (01) comprising a first body portion (011) located on the first body layer (11) and a first protective portion (012) located on the first protective layer (12); the pads (3) are located on the side of the first electrically conductive layer (1) facing away from the base substrate (100), and the pads (3) are connected to the first body portion (011); the thickness of the first body layer (11) is greater than or equal to 0.5 μm; the orthographic projection of the first protective portion (012) on the base substrate (100) covers the orthographic projection of the first body portion (011) on the base substrate (100); and the material of the first protective layer (12) includes nickel and / or titanium. The light-emitting substrate has relatively good structural stability.

Description

Light-emitting substrate and display device Technical Field

[0001] This disclosure relates to the field of display technology, and more particularly to a light-emitting substrate and a display device. Background Technology

[0002] In related technologies, the conductive layer of the light-emitting substrate is prone to corrosion during reliability testing, and resist plating problems are likely to occur when forming pads through the electroless gold process.

[0003] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art.

[0004] Summary of the Invention

[0005] According to one aspect of this disclosure, a light-emitting substrate is provided, wherein the light-emitting substrate comprises:

[0006] Substrate;

[0007] A first conductive layer is located on one side of the substrate. The first conductive layer includes a first main layer and a first protective layer stacked together. The first protective layer is located between the first main layer and the substrate. The first conductive layer includes a first conductive portion, which includes a first main portion located in the first main layer and a first protective portion located in the first protective layer.

[0008] The pads are located on the side of the first conductive layer away from the substrate, and the pads are connected to the first main body portion;

[0009] Wherein, the thickness of the first main body layer is greater than or equal to 0.5 μm, the orthographic projection of the first protective part on the substrate covers the orthographic projection of the first main body on the substrate, and the material of the first protective layer includes nickel and / or titanium.

[0010] In one exemplary embodiment of this disclosure, the light-emitting substrate further includes:

[0011] An activation layer is located between the pads and the first body portion.

[0012] In one exemplary embodiment of this disclosure, the pads include:

[0013] The pad body, wherein the activation layer is connected between the first body portion and the pad body;

[0014] The material of the first main layer includes copper, the material of the activation layer includes palladium, and the material of the pad body includes nickel.

[0015] In one exemplary embodiment of this disclosure, the first conductive layer does not have a protective layer on the side facing the pad.

[0016] In one exemplary embodiment of this disclosure, the material of the first protective layer includes one or more of MTD, WNi, and CuNi.

[0017] In one exemplary embodiment of this disclosure, the material of the first protective layer is MTD, and the ratio of the thickness of the first protective layer to the thickness of the first main layer is 1 / 45 to 1 / 30.

[0018] In one exemplary embodiment of this disclosure, the material of the first protective layer is WNi, and the ratio of the thickness of the first protective layer to the thickness of the first main layer is 1 / 18 to 1 / 9.

[0019] In one exemplary embodiment of this disclosure, the material of the first protective layer is CuNi, and the ratio of the thickness of the first protective layer to the thickness of the first main layer is 1 / 30 to 1 / 18.

[0020] In one exemplary embodiment of this disclosure, the material of the first protective layer is WNi, and the Ni content is 50%-55%.

[0021] In one exemplary embodiment of this disclosure, the material of the first protective layer is CuNi, and the Ni content is less than or equal to 10%.

[0022] In one exemplary embodiment of this disclosure, the light-emitting substrate further includes:

[0023] A second conductive layer is located between the substrate and the first conductive layer. The second conductive layer includes a second main layer and a second protective layer, with the second protective layer located between the substrate and the second main layer.

[0024] Wherein, the thickness of the second main layer is greater than the thickness of the first main layer, the orthographic projection of the second protective layer on the substrate covers the orthographic projection of the second main layer on the substrate, and the material of the second protective layer includes nickel and / or titanium.

[0025] In one exemplary embodiment of this disclosure, the light-emitting substrate further includes:

[0026] A first passivation layer is located between the substrate and the second conductive layer;

[0027] The second passivation layer is located between the second conductive layer and the first conductive layer;

[0028] A first organic layer is located between the second passivation layer and the first conductive layer;

[0029] The third passivation layer is located between the first organic layer and the first conductive layer;

[0030] The fourth passivation layer is located on the side of the first conductive layer that is away from the substrate.

[0031] According to one aspect of this disclosure, a light-emitting substrate is provided, wherein the light-emitting substrate comprises:

[0032] Substrate;

[0033] A first conductive layer is located on one side of the substrate. The first conductive layer includes a first main layer and a first protective layer stacked together. The first protective layer is located between the first main layer and the substrate. The first conductive layer includes a first conductive portion, which includes a first main portion located in the first main layer and a first protective portion located in the first protective layer.

[0034] The pads are located on the side of the first conductive layer away from the substrate, and the pads are connected to the first main body portion;

[0035] An activation layer is located between the pads and the first main body portion;

[0036] The thickness of the first main layer is greater than or equal to 0.5 μm, and the material of the first protective layer includes nickel and / or titanium.

[0037] In one exemplary embodiment of this disclosure, the pads include:

[0038] The pad body is located on the side of the activation layer opposite to the first main body portion;

[0039] The material of the activation layer includes palladium, and the material of the pad body includes nickel.

[0040] According to one aspect of this disclosure, a display device is provided, wherein the display device includes the above-described light-emitting substrate.

[0041] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0042] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0043] Figure 1 is a schematic diagram of the backlight module in the related technology;

[0044] Figure 2 is a partial electron microscope image of an exemplary embodiment of the light-emitting substrate of this disclosure;

[0045] Figure 3 is a partial electron microscope image of an exemplary embodiment of the light-emitting substrate of this disclosure;

[0046] Figure 4 is a schematic diagram of the structure of an exemplary embodiment of the light-emitting substrate disclosed herein;

[0047] Figures 5 and 6 are partial electron microscope images of the light-emitting substrates with different nickel contents in the first protective layer. Detailed Implementation

[0048] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, they are provided so that this disclosure will be more comprehensive and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore their detailed description will be omitted.

[0049] The terms “a,” “one,” and “the” are used to indicate the existence of one or more elements / components / etc.; the terms “including” and “having” are used to indicate an open-ended meaning of inclusion and that there may be other elements / components / etc. in addition to the listed elements / components / etc.

[0050] In the description of this disclosure, unless otherwise expressly specified and limited, the terms “first” and “second” are used for descriptive purposes only and should not be construed as indicating or implying relative importance; the term “multiple” refers to two or more; and the term “and / or” includes any and all combinations of one or more associated listed items. In particular, references to “the / described” object or “a” object are also intended to indicate one of a possible plurality of such objects.

[0051] Unless otherwise specified or stated, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, an integral connection, an electrical connection, or a signal connection; "connection" can be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.

[0052] Furthermore, it should be understood that the directional terms such as "upper," "lower," "inner," and "outer" described in the exemplary embodiments of this disclosure are used to describe the angles shown in the accompanying drawings and should not be construed as limiting the exemplary embodiments of this disclosure. It should also be understood that, in the context of an element or feature being connected to one or more "upper," "lower," "inner," or "outer" elements, it can be directly connected to one or more "upper," "lower," "inner," or "outer" elements, or indirectly connected to one or more "upper," "lower," "inner," or "outer" elements through intermediate elements.

[0053] Figure 1 shows a schematic diagram of a backlight module in the related technology. The backlight module includes a substrate 100, a first inorganic passivation layer PVX1, a second conductive layer 2, a second inorganic passivation layer PVX2, a first organic layer OC1, a third inorganic passivation layer PVX3, a first conductive layer 1, a fourth inorganic passivation layer PVX4, and a second organic layer OC2, stacked sequentially. The first conductive layer 1 includes a first protective layer 12, a first main layer 11, and a second protective layer 13, stacked together, with the first main layer 11 located between the first protective layer 12 and the second protective layer 13. The second conductive layer 2 includes a third protective layer 22, a second main layer 21, and a fourth protective layer 23, stacked together, with the second main layer 21 located between the third protective layer 22 and the fourth protective layer 23. An opening is formed on the fourth inorganic passivation layer PVX4, the second organic layer OC2, and the second protective layer 13 to expose at least a portion of the first main body layer 11 outside the fourth inorganic passivation layer PVX4, the second organic layer OC2, and the second protective layer 13. The backlight module also includes a pad 3 located within the opening. The pad 3 is connected to the first main body layer 11 and is used to solder an LED light-emitting chip or a driver chip IC, the driver chip IC being used to drive the LED light-emitting chip to emit light.

[0054] In related technologies, the materials of the first protective layer 12, the second protective layer 13, the third protective layer 22, and the fourth protective layer 23 can be MoNb (molybdenum-niobium alloy), and the materials of the first main layer 11 and the second main layer 21 can include Cu (copper). However, as shown in Figure 1, after forming the first conductive layer 1 and the second conductive layer 2 through photolithography, residual photoresist needs to be removed using an alkaline cleaning solution. The alkaline cleaning solution has an electrochemical corrosion effect on the exposed metals Cu and Mo. Cu has a low corrosion potential and is a negative electrode, while Mo has a high corrosion potential and is a positive electrode. Metal ions dissolve, resulting in over-etching problems. The chemical formulas for the alkaline cleaning solution to corrode Cu and Mo are shown below:

[0055] Cu + 2OH- → Cu(OH)2

[0056] Mo+O2+R-NH2+H2O→(R-NH3)2MoO4

[0057] Especially when the thickness of the first main body layer 11 and the second main body layer 21 is relatively thick, the potential difference between Cu and Mo is large, making Cu and Mo more susceptible to corrosion. As shown in Figure 1, under the electrochemical corrosion action of alkaline cleaning solution, a first over-etching gap UC1 is formed between the edge of the first main body layer 11 and the third inorganic passivation layer PVX3, and a second over-etching gap UC2 is formed between the edge of the second main body layer 21 and the first inorganic passivation layer PVX1. These first over-etching gaps UC1 and second over-etching gaps UC2 affect the reliability of the backlight module. For example, if the backlight module operates continuously for 500 hours at 85°C and 85% humidity, corrosion of the first and second conductive layers will occur.

[0058] Figure 2 shows a partial electron microscope image of an exemplary embodiment of the light-emitting substrate of this disclosure. It can be clearly seen from Figure 2 that a large gap is formed between the edge of the first main body layer 11 and the third inorganic passivation layer PVX3.

[0059] Furthermore, as shown in Figure 1, the pad 3 can be formed by a chemical gold plating process. When forming the pad 3 by the chemical gold plating process, it is necessary to etch away a portion of the second protective layer 13 above the first main body layer 11 to expose a portion of the first main body layer 11. The pad can be formed on the exposed portion of the first main body layer 11 by the chemical gold plating process. Since there are impurity particles in the first main body layer 11, when dry etching is performed on the fourth inorganic passivation layer PVX4 and the second protective layer 13 with dry etching gas (e.g., CF4 / O2) to expose a portion of the first main body layer 11, the dry etching gas can easily penetrate the first protective layer 12 and the third inorganic passivation layer PVX3 through the impurity particles in the first main body layer 11. In the chemical gold plating process, the first organic layer OC1 is prone to expansion, resulting in a chemical gold plating resistance problem at the etched position of the first protective layer 12. As shown in Figure 3, a partial electron microscope image of an exemplary embodiment of the light-emitting substrate of this disclosure is shown. It can be clearly seen from Figure 3 that a significant chemical gold plating resistance problem occurs at the etched position H of the first protective layer 12.

[0060] Based on this, an exemplary embodiment provides a light-emitting substrate, as shown in FIG4, which is a structural schematic diagram of an exemplary embodiment of the light-emitting substrate disclosed herein. The light-emitting substrate includes: a substrate 100, a first conductive layer 1, and pads 3. The first conductive layer 1 is located on one side of the substrate 100. The first conductive layer 1 includes a first main layer 11 and a first protective layer 12 stacked together. The first protective layer 12 is located between the first main layer 11 and the substrate 100. The first conductive layer 1 includes a first conductive portion 01, which includes a first main portion 011 located in the first main layer 11 and a first protective portion 012 located in the first protective layer 12. The pads 3 are located on the side of the first conductive layer 1 facing away from the substrate 100 and are connected to the first main portion 011. The thickness of the first main layer 11 is greater than or equal to 0.5 μm. The orthographic projection of the first protective portion 012 on the substrate 100 covers the orthographic projection of the first main portion 011 on the substrate. The material of the first protective layer 12 includes nickel and / or titanium.

[0061] This exemplary embodiment sets the material of the first protective layer 12 to include nickel and / or titanium, thereby improving the corrosion resistance of the first protective layer 12 in alkaline cleaning solutions. Simultaneously, the first protective layer 12 containing nickel and / or titanium also exhibits etching resistance under dry etching gas. Therefore, the light-emitting substrate provided by this exemplary embodiment can improve product reliability while avoiding the problems associated with electroless gold resist plating.

[0062] In this exemplary embodiment, the first protective layer 12 has a stronger antioxidant capacity than the first main body layer 11, and the first protective layer 12 can be used to prevent the first main body layer 11 from being oxidized.

[0063] In this exemplary embodiment, as shown in FIG4, the light-emitting substrate further includes an activation layer 4, which is located between the pad 3 and the first main body portion 011. In this exemplary embodiment, the pad 3 can be formed by an electrochemical self-growth process. The electrochemical self-growth process may include: firstly, cleaning the first body portion 011 exposed outside the inorganic passivation material layer, for example, by cleaning the first body portion 011 with an acid solution or an alkaline solution to remove dirt from the first body portion 011; then, micro-etching the first body portion 011 exposed outside the inorganic passivation material layer to increase the surface roughness and activity of the first body portion 011 exposed outside the inorganic passivation material layer, so that the first body portion 011 and the subsequent activation layer can adhere; then, activating the first body portion 011 exposed outside the inorganic passivation material layer, for example, immersing the first body portion 011 in an activation solution (e.g., palladium salt solution), thereby forming an activation layer 4 (e.g., palladium layer) on the surface of the first body portion 011; then, immersing the first body portion 011 in a nickel plating solution, where palladium acts as a catalyst to reduce nickel ions to elemental nickel and attach it to the surface of the first body portion 011.

[0064] In this exemplary embodiment, as shown in FIG4, the pad 3 may include a pad body 31 and a pad protective layer 32. The pad protective layer 32 has an antioxidant effect, thereby improving the antioxidant capacity of the pad body 31. An activation layer 4 is connected between the first body portion 011 and the pad body 31. The material of the first body layer 11 may include copper, the material of the activation layer 4 may include palladium, the material of the pad body 31 may include nickel, and the material of the pad protective layer 32 may include gold. For example, the first body layer may be a copper layer, the activation layer 4 may be a palladium layer, the pad body 31 may be a nickel structure, and the pad protective layer 32 may be a gold layer. In this exemplary embodiment, the pad body 31 can be immersed in a gold plating solution. Nickel will reduce gold ions to elemental gold and adhere to the surface of the nickel layer, forming the pad protective layer 32. It should be understood that in other exemplary embodiments, the material of the pad body 31 may also include copper, tin, etc., and the material of the pad protective layer 32 may also include zinc, silver, etc.

[0065] In this exemplary embodiment, as shown in FIG4, no protective layer is provided on the side of the first conductive layer 1 facing the pad 3. Since the upper surface of the first conductive layer 1 needs to expose at least part of the first main body layer 11 for the gold plating process for forming the pad on the first main body layer 11, and the protective layer containing nickel and / or titanium cannot be dry-etched by dry etching gas, the side of the first conductive layer 1 facing the pad 3 may not have a protective layer.

[0066] It should be understood that, in other exemplary embodiments, a protective layer that can be dry-etched by dry etching gas may also be provided on the side of the first conductive layer 1 facing the pad 3. For example, a molybdenum-niobium alloy layer may be formed on the side of the first conductive layer 1 facing the pad 3.

[0067] In this exemplary embodiment, the material of the first protective layer 12 may include one or more of MTD, WNi, and CuNi.

[0068] When the material of the first protective layer 12 is MTD (molybdenum-nickel-titanium alloy), the ratio of the thickness of the first protective layer 12 to the thickness of the first main layer can be 1 / 45 to 1 / 30. For example, the thickness ratio of the first main layer can be equal to 1 / 45, 5 / 180, 3 / 90, etc. The thickness of the first protective layer 12 can be 200 angstroms to 300 angstroms, for example, the thickness of the first protective layer 12 can be equal to 200 angstroms, 250 angstroms, 300 angstroms, etc., and the thickness of the first main layer can be 0.5 μm to 2 μm, for example, the thickness of the first main layer can be equal to 0.5 μm, 0.7 μm, 0.9 μm, 1.1 μm, 1.3 μm, 1.5 μm, 1.7 μm, 1.9 μm, 2 μm, etc.

[0069] When the material of the first protective layer 12 is WNi (tungsten-nickel alloy), the ratio of the thickness of the first protective layer 12 to the thickness of the first main layer can be 1 / 18 to 1 / 9. For example, the ratio of the thickness of the first protective layer 12 to the thickness of the first main layer can be equal to 10 / 180, 12 / 180, 14 / 180, 16 / 180, 18 / 180, 20 / 180, etc. The thickness of the first protective layer 12 can be 500 angstroms to 1000 angstroms. For example, the thickness of the first protective layer 12 can be equal to 500 angstroms, 600 angstroms, 700 angstroms, 800 angstroms, 900 angstroms, 1000 angstroms, etc. The thickness of the first main layer can be 0.5 μm to 2 μm. For example, the thickness of the first main layer 11 can be equal to 0.5 μm, 0.7 μm, 0.9 μm, 1.1 μm, 1.3 μm, 1.5 μm, 1.7 μm, 1.9 μm, 2 μm, etc.

[0070] In this exemplary embodiment, when the material of the first protective layer is WNi, the Ni content can be 50%-55%. For example, the Ni content can be equal to 50%, 51%, 52%, 53%, 54%, 55%, etc. The higher the Ni content, the stronger the corrosion resistance and etching resistance of the first protective layer 12. As shown in Figures 5 and 6, Figures 5 and 6 are partial SEM images of the light-emitting substrate with different nickel contents in the first protective layer. Figure 5 shows a partial SEM image of the light-emitting substrate with a nickel content of 50% in the tungsten-nickel alloy, and Figure 6 shows a partial SEM image of the light-emitting substrate with a nickel content of 55% in the tungsten-nickel alloy. As shown in Figure 5, the lower the nickel content in the tungsten-nickel alloy, the weaker the etching resistance of the first protective layer 12. When the first conductive layer is etched by the etching process, the time to etch away the first protective layer 12 is shorter. Correspondingly, the time for the etching solution to etch the edge of the first main layer 11 is also shorter, thus forming a steeper slope. As shown in Figure 6, the higher the nickel content in the tungsten-nickel alloy, the stronger the etching resistance of the first protective layer 12. When the first conductive layer is etched by the etching process, the first protective layer 12 takes longer to be etched away. Correspondingly, the etching solution takes longer to etch the edge of the first main layer 11, thus forming a gentler slope.

[0071] Meanwhile, as can be seen from Figures 5 and 6, the first protective layer was not corroded by the alkaline cleaning solution or etched by the dry etching gas.

[0072] When the material of the first protective layer 12 is CuNi (copper-nickel alloy), the ratio of the thickness of the first protective layer 12 to the thickness of the first main layer can be 1 / 30 to 1 / 18. For example, the ratio of the thickness of the first protective layer 12 to the thickness of the first main layer can be equal to 3 / 90, 4 / 90, 5 / 90, etc. The thickness of the first protective layer 12 can be 300 angstroms to 500 angstroms. For example, the thickness of the first protective layer 12 can be equal to 300 angstroms, 400 angstroms, 500 angstroms, etc. The thickness of the first main layer can be 0.5 μm to 2 μm. For example, the thickness of the first main layer can be equal to 0.5 μm, 0.7 μm, 0.9 μm, 1.1 μm, 1.3 μm, 1.5 μm, 1.7 μm, 1.9 μm, 2 μm, etc.

[0073] In this exemplary embodiment, when the material of the first protective layer is CuNi (copper-nickel alloy), the Ni content is less than or equal to 10%. For example, the Ni content can be equal to 10%, 9%, 8%, 7%, 6%, 5%, etc.

[0074] It should be noted that the content of the aforementioned metal is the weight ratio of the metal in the alloy.

[0075] In this exemplary embodiment, as shown in FIG. 4, the light-emitting substrate may further include a second conductive layer 2, which is located between the substrate 100 and the first conductive layer 1. The second conductive layer 2 includes a second main layer 21 and a second protective layer 22, which is located between the substrate and the second main layer 21. The second protective layer 22 can be used to prevent the second main layer 21 from being corroded. The thickness of the second main layer 21 may be greater than the thickness of the first main layer 11. The orthographic projection of the second protective layer 22 on the substrate covers the orthographic projection of the second main layer 21 on the substrate. The material of the second protective layer 22 includes nickel and / or titanium. This exemplary embodiment also utilizes a second protective layer with corrosion resistance to prevent the second conductive layer from being corroded.

[0076] The material of the second protective layer 22 can also include one or more of MTD (molybdenum-nickel-titanium alloy), WNi, and CuNi. When the material of the second protective layer 22 is MTD, the thickness of the second protective layer 22 can be 200 angstroms to 300 angstroms, for example, the thickness of the second protective layer 22 can be equal to 200 angstroms, 250 angstroms, 300 angstroms, etc.; when the material of the second protective layer 22 is WNi (tungsten-nickel alloy), the thickness of the second protective layer 22 can be 500 angstroms to 1000 angstroms, for example, the thickness of the second protective layer 22 can be equal to 500 angstroms, 600 angstroms, 700 angstroms, 800 angstroms, 900 angstroms, 1000 angstroms, etc.; when the material of the second protective layer 22 is CuNi (copper-nickel alloy), the thickness of the second protective layer 22 can be 300 angstroms to 500 angstroms, for example, the thickness of the second protective layer 22 can be equal to 300 angstroms, 400 angstroms, 500 angstroms, etc. The second main layer 21 can include Cu, for example, the second main layer 21 can be a copper layer. The thickness of the second main layer 21 can be 3μm-4μm. For example, the thickness of the second main layer 21 can be equal to 3μm, 3.1μm, 3.2μm, 3.3μm, 3.4μm, 3.5μm, 3.6μm, 3.7μm, 3.8μm, 3.9μm, 4μm, etc.

[0077] In this exemplary embodiment, at least a portion of the structure of the second conductive layer 2 and at least a portion of the structure of the first conductive layer 1 can be connected via vias. The portion of the second conductive layer can be used to form multiple signal lines, such as power lines and data lines. The data lines can be used to provide data signals to the driver chip IC, and the power lines can be used to provide high / low power signals to the light-emitting chip LED or the driver chip IC. A portion of the first conductive part 01 can bridge between the signal lines and the pads 3 located in the second conductive layer.

[0078] In this exemplary embodiment, as shown in FIG4, the light-emitting substrate further includes: a first passivation layer PVX1, a second passivation layer PVX2, a first organic layer OC1, a third passivation layer PVX3, and a fourth passivation layer PVX4. The first passivation layer PVX1 is located between the substrate 100 and the second conductive layer 2; the second passivation layer PVX2 is located between the second conductive layer 2 and the first conductive layer 1; the first organic layer OC1 is located between the second passivation layer PVX2 and the first conductive layer 1; the third passivation layer PVX3 is located between the first organic layer OC1 and the first conductive layer 1; and the fourth passivation layer PVX4 may be located on the side of the first conductive layer 1 facing away from the substrate.

[0079] In this exemplary embodiment, as shown in FIG4, the light-emitting substrate may further include a second organic layer OC2. The second organic layer OC2 may be located on the side of the fourth passivation layer PVX4 facing away from the substrate 100. The second organic layer OC2 can improve the flatness of the light-emitting substrate. It should be understood that in other exemplary embodiments, the light-emitting substrate may not include the second organic layer OC2. This arrangement can improve the bonding between the pad body 31 and the fourth passivation layer PVX4, and prevent the formation of a gap between the pad body 31 and the second organic layer OC2. This can prevent solder paste used for soldering light-emitting units or chips from entering the interior of the light-emitting substrate through the gap between the second organic layer OC2 and the pad body 31, thereby avoiding reliability issues caused by the reaction between the solder paste and the first host layer 11.

[0080] In this exemplary embodiment, as shown in FIG4, the light-emitting substrate may further include a light-emitting chip (LED) and a driver chip (IC), wherein the driver chip (IC) can be used to drive the light-emitting chip (LED) to emit light. In this exemplary embodiment, some pads 3 can be used for soldering to the light-emitting chip (LED), and some pads 3 can be used for soldering to the driver chip (IC).

[0081] In this exemplary embodiment, the light-emitting substrate can be used to form a backlight module, which can be used as an LCD display panel. Alternatively, the light-emitting substrate can also be used directly as a display panel. The pads on the light-emitting substrate can be used to bond light-emitting chips, which can be used to directly display images.

[0082] In this exemplary embodiment, as shown in FIG4, the light-emitting substrate shown in FIG4 adopts a double conductive layer architecture, and the signal line is disposed in the second conductive layer. It should be understood that in other exemplary embodiments, the light-emitting substrate may also adopt a single conductive layer architecture, and the signal line may also be located in the first conductive layer.

[0083] In this exemplary embodiment, as shown in FIG4, the substrate 100 may be a glass substrate. It should be understood that in other exemplary embodiments, the substrate 100 may also be a PCB substrate, and the material of the PCB substrate may include one or more of phenolic resin, epoxy resin, polyimide, polytetrafluoroethylene, polyphenylene ether, polyester, and polycarbonate.

[0084] In this exemplary embodiment, the materials of the first inorganic passivation layer PVX1, the second inorganic passivation layer PVX2, the third inorganic passivation layer PVX3, and the fourth inorganic passivation layer PVX4 may include one or more of silicon oxide, silicon nitride, and aluminum oxide. The inorganic passivation layer PVX has an insulating effect.

[0085] In this exemplary embodiment, the materials of the first organic layer OC1 and the second organic layer OC2 may include one or more of polyester organic materials, epoxy resin, and silicone.

[0086] This exemplary embodiment also provides a light-emitting substrate, as shown in FIG4, the light-emitting substrate includes: a substrate 100, a first conductive layer 1, a pad 3, and an activation layer 4. The first conductive layer 1 is located on one side of the substrate 100. The first conductive layer 1 includes a first main layer 11 and a first protective layer 12 stacked together. The first protective layer 12 is located between the first main layer 11 and the substrate 100. The first conductive layer 1 includes a first conductive portion 01, which includes a first main portion 011 located in the first main layer 11 and a first protective portion 012 located in the first protective layer 12. A pad 3 is located on the side of the first conductive layer 1 facing away from the substrate 100 and is connected to the first main portion 011. An activation layer 4 is located between the pad 3 and the first main portion 011. The thickness of the first main layer 11 is greater than or equal to 0.5 μm. For example, the thickness of the first main layer can be equal to 0.5 μm, 0.7 μm, 0.9 μm, 1.1 μm, 1.3 μm, 1.5 μm, 1.7 μm, 1.9 μm, 2 μm, etc. The material of the first protective layer 12 includes nickel and / or titanium.

[0087] This exemplary embodiment forms pads on the first body portion 011 through a chemical gold plating process, while improving product reliability through a first protective layer 12 that is corrosion-resistant and etch-resistant. In addition, this arrangement can also avoid the problem of chemical gold plating resistance.

[0088] The display substrate may have all the technical features of the aforementioned display substrate.

[0089] It should be noted that the scale of the accompanying drawings in this disclosure can be used as a reference in actual processes, but is not limited thereto. For example, the thickness and spacing of each film layer, and the width and spacing of each signal line, can be adjusted according to actual needs. The number of pixels in the display substrate and the number of sub-pixels in each pixel are not limited to the quantities shown in the figures. The accompanying drawings described in this disclosure are merely structural schematic diagrams. Furthermore, the qualifiers such as "first" and "second" are only used to specify different structural names and do not imply a specific order.

[0090] This exemplary embodiment also provides a display device, which includes the above-described light-emitting substrate. The display device can be a mobile phone, tablet computer, television, or other display device.

[0091] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the claims.

[0092] It should be understood that this disclosure is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this disclosure is defined only by the appended claims.

Claims

1. A light-emitting substrate, wherein, The light-emitting substrate includes: Substrate; A first conductive layer is located on one side of the substrate. The first conductive layer includes a first main layer and a first protective layer stacked together. The first protective layer is located between the first main layer and the substrate. The first conductive layer includes a first conductive portion, which includes a first main portion located in the first main layer and a first protective portion located in the first protective layer. The pads are located on the side of the first conductive layer away from the substrate, and the pads are connected to the first main body portion; Wherein, the thickness of the first main body layer is greater than or equal to 0.5 μm, the orthographic projection of the first protective part on the substrate covers the orthographic projection of the first main body on the substrate, and the material of the first protective layer includes nickel and / or titanium.

2. The light-emitting substrate according to claim 1, wherein, The light-emitting substrate further includes: An activation layer is located between the pads and the first body portion.

3. The light-emitting substrate according to claim 2, wherein, The pads include: The pad body, wherein the activation layer is connected between the first body portion and the pad body; The material of the first main layer includes copper, the material of the activation layer includes palladium, and the material of the pad body includes nickel.

4. The light-emitting substrate according to claim 1, wherein, The first conductive layer has no protective layer on the side facing the pad.

5. The light-emitting substrate according to any one of claims 1-4, wherein, The material of the first protective layer includes one or more of MTD, WNi, and CuNi.

6. The light-emitting substrate according to claim 5, wherein, The material of the first protective layer is MTD, and the ratio of the thickness of the first protective layer to the thickness of the first main layer is 1 / 45-1 / 30.

7. The light-emitting substrate according to claim 5, wherein, The material of the first protective layer is WNi, and the ratio of the thickness of the first protective layer to the thickness of the first main layer is 1 / 18-1 / 9.

8. The light-emitting substrate according to claim 5, wherein, The material of the first protective layer is CuNi, and the ratio of the thickness of the first protective layer to the thickness of the first main layer is 1 / 30 to 1 / 18.

9. The light-emitting substrate according to claim 5, wherein, The material of the first protective layer is WNi, and the Ni content is 50%-55%.

10. The light-emitting substrate according to claim 5, wherein, The material of the first protective layer is CuNi, and the Ni content is less than or equal to 10%.

11. The light-emitting substrate according to any one of claims 1-4, wherein, The light-emitting substrate further includes: A second conductive layer is located between the substrate and the first conductive layer. The second conductive layer includes a second main layer and a second protective layer, with the second protective layer located between the substrate and the second main layer. Wherein, the thickness of the second main layer is greater than the thickness of the first main layer, the orthographic projection of the second protective layer on the substrate covers the orthographic projection of the second main layer on the substrate, and the material of the second protective layer includes nickel and / or titanium.

12. The light-emitting substrate according to claim 11, wherein, The light-emitting substrate further includes: A first passivation layer is located between the substrate and the second conductive layer; The second passivation layer is located between the second conductive layer and the first conductive layer; A first organic layer is located between the second passivation layer and the first conductive layer; The third passivation layer is located between the first organic layer and the first conductive layer; The fourth passivation layer is located on the side of the first conductive layer that is away from the substrate.

13. A light-emitting substrate, wherein, The light-emitting substrate includes: Substrate; A first conductive layer is located on one side of the substrate. The first conductive layer includes a first main layer and a first protective layer stacked together. The first protective layer is located between the first main layer and the substrate. The first conductive layer includes a first conductive portion, which includes a first main portion located in the first main layer and a first protective portion located in the first protective layer. The pads are located on the side of the first conductive layer away from the substrate, and the pads are connected to the first main body portion; An activation layer is located between the pads and the first main body portion; Wherein, the thickness of the first main body layer is greater than or equal to 0.5 μm, and the thickness of the first protective layer is... Materials include nickel and / or titanium.

14. The light-emitting substrate according to claim 13, wherein, The pads include: The pad body is located on the side of the activation layer opposite to the first main body portion; The material of the activation layer includes palladium, and the material of the pad body includes nickel.

15. A display device, wherein, The display device includes the light-emitting substrate according to any one of claims 1-14.

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