Driving backplane and display device

Abstract

A driving backplane and a display device. The driving backplane comprises a substrate, a first conductive layer, a first insulating layer, and a second conductive layer. The first conductive layer comprises a first conductive portion; the first insulating layer is located on the side of the first conductive layer distant from the substrate, the first insulating layer has a first opening running through the first insulating layer, and the first opening exposes at least part of the first conductive portion; the first insulating layer comprises a first insulating portion and a second insulating portion that are stacked; the surface of the first insulating portion distant from the substrate is a first surface, and the surface of the first insulating portion close to the substrate is a second surface, and the maximum included angle between the sidewall of the first opening between the first surface and the second surface and the substrate is less than the maximum included angle between the sidewall of the first opening in the second insulating portion and the substrate; the second conductive layer is located on the side of the first conductive layer distant from the substrate, the second conductive layer comprises a second conductive portion, and the second conductive portion is at least partially located in the first opening and is in contact with the sidewall of the first opening.

Description

Drive backplane and display device Technical Field

[0001] This disclosure relates to the field of display technology, and more particularly to a driving backplane and display device. Background Technology

[0002] Micro LEDs (or Mini LEDs) are gaining increasing attention due to their small size, low power consumption, and long lifespan. Micro LEDs are LEDs with a chip size less than 100μm, while Mini LEDs are LEDs with a chip size between 100μm and 300μm. The fabrication process of micro LED lamp boards or Mini LEDs involves numerous techniques, such as die bonding, automated optical inspection (AOI), rework, and bonding. Die bonding refers to the process of transferring and bonding the light-emitting chip from the wafer to the driver backplane.

[0003] Summary of the Invention

[0004] On one hand, a drive backplane is provided. The drive backplane includes a glass substrate, a first conductive layer, a first insulating layer, and a second conductive layer. The first conductive layer is located on one side of the substrate and includes a first conductive portion capable of alloying with solder. The first insulating layer is located on the side of the first conductive layer away from the substrate and has a first opening penetrating the first insulating layer, the first opening exposing the first conductive portion. Along a direction perpendicular to the substrate and pointing from the substrate to the first conductive layer, the first insulating layer includes a first insulating portion and a second insulating portion stacked sequentially. The surface of the first insulating portion away from the substrate is a first surface, and the surface closer to the substrate is a second surface. The maximum angle between the sidewall of the first opening between the first surface and the second surface and the substrate is smaller than the maximum angle between the sidewall of the first opening in the second insulating portion and the substrate. The second conductive layer is located on the side of the first conductive layer away from the substrate and includes a second conductive portion. The second conductive portion is at least partially located within the first opening and in contact with the sidewall of the first opening. The second conductive portion is used to directly contact and alloy with solder.

[0005] In some embodiments, the thickness of the second insulating portion is greater than the thickness of the first insulating portion.

[0006] In some embodiments, the ratio of the thickness of the second insulating portion to the thickness of the first insulating portion is 1.5 to 2.2.

[0007] In some embodiments, the longitudinal section of the sidewall of the first opening in the first insulating portion is a straight line, the longitudinal section of the sidewall of the first opening in the second insulating portion is a straight line, and the angle between the sidewall of the first opening between the first surface and the second surface and the substrate is smaller than the angle between the sidewall of the first opening in the second insulating portion and the substrate.

[0008] In some embodiments, the longitudinal cross-section of the sidewall of the first opening in the first insulating portion is arc-shaped, and the angle between the sidewall of the first opening in the first insulating portion and the substrate gradually decreases along a direction perpendicular to the substrate and pointing from the first conductive layer to the substrate; the longitudinal cross-section of the sidewall of the first opening in the second insulating portion is arc-shaped, and the angle between the sidewall of the first opening in the second insulating portion and the substrate gradually increases along a direction perpendicular to the substrate and pointing from the first conductive layer to the substrate, and the angle between the sidewall of the first opening in the first surface and the substrate is equal to the angle between the sidewall of the first opening in the third surface and the substrate; wherein, the surface of the second insulating portion near the substrate is the third surface.

[0009] In some embodiments, at any two points on the arc of the first insulating portion, the curvature of the point farther from the substrate is greater than the curvature of the other point; and / or, at any two points on the arc of the second insulating portion, the curvature of the point farther from the substrate is less than the curvature of the other point.

[0010] In some embodiments, the first insulating layer includes a first sublayer and a second sublayer. The first sublayer is made of an organic material. The second sublayer is located between the first sublayer and the first conductive layer. The second sublayer is made of an inorganic material. The first sublayer is used as a mask for the second sublayer.

[0011] In some embodiments, along a direction perpendicular to the substrate and pointing from the substrate to the first conductive layer, the first sub-layer includes a third insulating portion and a fourth insulating portion stacked sequentially, wherein the surface of the third insulating portion away from the substrate is a fifth surface, and the surface close to the substrate is a sixth surface, and the maximum angle between the sidewall of the first opening between the fifth surface and the sixth surface and the substrate is less than the maximum angle between the sidewall of the first opening in the fourth insulating portion and the substrate; the angle between the sidewall of the first opening in the second sub-layer and the substrate is less than or equal to the angle between the sidewall of the first opening in the third insulating portion and the substrate.

[0012] In some embodiments, the thickness of the fourth insulating portion is greater than the thickness of the third insulating portion.

[0013] In some embodiments, the ratio of the thickness of the fourth insulating portion to the thickness of the third insulating portion is 2 to 3.

[0014] In some embodiments, the longitudinal section of the sidewall of the first opening in the third insulating portion is a straight line, the longitudinal section of the sidewall of the first opening in the fourth insulating portion is a straight line, and the angle between the sidewall of the first opening between the fifth surface and the sixth surface and the substrate is smaller than the angle between the sidewall of the first opening in the fourth insulating portion and the substrate.

[0015] In some embodiments, the longitudinal cross-sectional shape of the sidewall of the first opening in the third insulating portion is an arc, and the longitudinal cross-sectional shape of the sidewall of the first opening in the fourth insulating portion is an arc. Along a direction perpendicular to the substrate and pointing from the first conductive layer to the substrate, the angle between the sidewall of the first opening in the third insulating portion and the substrate gradually decreases; along a direction perpendicular to the substrate and pointing from the first conductive layer to the substrate, the angle between the sidewall of the first opening in the fourth insulating portion and the substrate gradually increases, and the angle between the sidewall of the first opening in the sixth surface and the substrate is equal to the angle between the sidewall of the first opening in the seventh surface and the substrate; wherein, the surface of the fourth insulating portion near the substrate is the seventh surface.

[0016] In some embodiments, at any two points on the arc of the third insulating portion, the curvature of the point farther from the substrate is greater than the curvature of the other point; and / or, at any two points on the arc of the fourth insulating portion, the curvature of the point farther from the substrate is less than the curvature of the other point.

[0017] In some embodiments, the longitudinal section of the sidewall of the first opening in the second sublayer is a straight line, and the angle between the sidewall of the first opening in the second sublayer and the substrate is equal to the angle between the sidewall of the first opening in the third insulating portion and the substrate.

[0018] In some embodiments, the longitudinal cross-section of the sidewall of the first opening in the second sublayer is an arc, and along a direction perpendicular to the substrate and pointing from the first conductive layer to the substrate, the angle between the sidewall of the first opening in the second sublayer and the substrate gradually decreases, and the angle between the sidewall of the first opening in the eighth surface and the substrate is equal to the angle between the sidewall of the first opening in the fifth surface and the substrate; the surface of the second sublayer away from the substrate is the eighth surface.

[0019] In some embodiments, the drive backplane further includes a second insulating layer. The second insulating layer is located on the side of the first insulating layer and the second conductive layer away from the substrate, and the second insulating layer has a second opening that exposes at least a portion of the second conductive portion.

[0020] In some embodiments, the second conductive portion includes a first solder portion and a second solder portion surrounding the first solder portion, wherein the surface of the first solder portion away from the substrate is parallel to the substrate, and the surface of the second solder portion away from the substrate has an angle with the substrate; the orthographic projection of the second opening on the substrate is located within the range of the orthographic projection of the first solder portion on the substrate.

[0021] In some embodiments, the maximum included angle between the sidewall of the first opening and the substrate is 60° to 70°.

[0022] In some embodiments, the angle between the sidewall of the first opening near the substrate and the substrate is 35° to 45°.

[0023] On the other hand, a display device is provided. The display device includes a driving backplate as described in any of the above embodiments.

[0024] In another aspect, a method for fabricating a drive backplane is provided. The method includes: fabricating a first conductive layer on a substrate; the first conductive layer including a first conductive portion; fabricating a first insulating layer on a side of the first conductive layer away from the substrate; the first insulating layer having a first opening penetrating the first insulating layer, the first opening exposing at least a portion of the first conductive portion; the first insulating layer including a first insulating portion and a second insulating portion stacked together in a direction perpendicular to the substrate and pointing from the substrate to the first conductive layer; a surface of the first insulating portion away from the substrate being a first surface, and a surface closer to the substrate being a second surface, the maximum angle between the sidewall of the first opening between the first surface and the second surface and the substrate being smaller than the maximum angle between the sidewall of the first opening in the second insulating portion and the substrate; fabricating a second conductive layer on the side of the first conductive layer away from the substrate; the second conductive layer including a second conductive portion, at least a portion of the second conductive portion being located within the first opening and in contact with the sidewall of the first opening.

[0025] In some embodiments, the step of forming a first insulating layer on the side of the first conductive layer away from the substrate includes: forming a first type of initial insulating layer on the side of the first conductive layer away from the substrate; the first type of initial insulating layer covering the first conductive layer; forming a second type of initial insulating layer on the side of the first type of initial insulating layer away from the substrate; the second type of initial insulating layer having a first initial opening penetrating the second type of initial insulating layer, the orthographic projection of the first initial opening on the substrate being located within the range of the orthographic projection of the first conductive portion on the substrate; etching the first type of initial insulating layer through the first initial opening using a first etching gas to form a second initial opening, the second initial opening penetrating the first type of initial insulating layer, and the orthographic projection of the second initial opening on the substrate being located within the range of the orthographic projection of the first conductive portion on the substrate; etching the sidewalls of the first initial opening and the sidewalls of the second initial opening using a second etching gas to form the first opening; wherein the etching rate of the second etching gas is less than the etching rate of the first etching gas.

[0026] In some embodiments, both the first etching gas and the second etching gas include oxygen, and further include carbon tetrafluoride and / or sulfur hexafluoride, and the flow ratio of oxygen to carbon tetrafluoride in the first etching gas is greater than the flow ratio of oxygen to carbon tetrafluoride in the second etching gas.

[0027] In some embodiments, the flow ratio of oxygen in the first etching gas to carbon tetrafluoride and / or sulfur hexafluoride is 1 / 9 to 1; and or, the flow ratio of oxygen in the second etching gas to carbon tetrafluoride and / or sulfur hexafluoride is 1 / 39 to 1 / 19. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual flow of the method, the actual timing of the signals, etc. involved in the embodiments of this disclosure.

[0029] Figure 1 is a structural diagram of a display device according to some embodiments;

[0030] Figure 2 is another structural diagram of a display device according to some embodiments;

[0031] Figure 3 is a cross-sectional view along section line AA in Figure 1;

[0032] Figure 4 is another cross-sectional view along section line AA in Figure 1;

[0033] Figure 5 is a structural diagram of a display panel according to some embodiments;

[0034] Figure 6 is a cross-sectional view along section line BB in Figure 5;

[0035] Figure 7 is a magnified view of a portion of C in Figure 6;

[0036] Figure 8 is another enlarged view of part C in Figure 6;

[0037] Figure 9 is another enlarged view of part C in Figure 6;

[0038] Figures 10 to 18 are flowcharts of the manufacturing method of the drive backplane according to some embodiments. Detailed Implementation

[0039] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0040] Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms, such as the third-person singular "comprises" and the present participle "comprising," are interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0041] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0042] In describing some embodiments, the terms "coupled" and "connected," and their derivative expressions, may be used. The term "connected" should be interpreted broadly; for example, a "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection via an intermediate medium. The term "coupled," for example, indicates that two or more components have direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that do not have direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.

[0043] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0044] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0045] As used herein, depending on the context, the term “if” may optionally be interpreted as meaning “when”, “in the event of”, “in response to determination”, or “in response to detection”. Similarly, depending on the context, the phrase “if it is determined that…” or “if [the stated condition or event] is detected” may optionally be interpreted as meaning “in the event of determination that…”, “in response to determination that…”, “when [the stated condition or event] is detected”, or “in response to the detection of [the stated condition or event]”.

[0046] The use of “applies to” or “configured to” in this article implies an open and inclusive language that does not preclude applicability to or configuration to devices that perform additional tasks or steps.

[0047] In addition, the use of “based on” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” one or more of the stated conditions or values ​​may in practice be based on additional conditions or values ​​beyond those stated.

[0048] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0049] As used herein, “parallel,” “perpendicular,” and “equal” include the described situation and situations that are similar to the described situation, within an acceptable range of deviation, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, “parallel” includes absolute parallelism and approximate parallelism, where an acceptable range of deviation for approximate parallelism may be, for example, within 5°; “perpendicular” includes absolute perpendicularity and approximate perpendicularity, where an acceptable range of deviation for approximate perpendicularity may also be, for example, within 5°; “equal” includes absolute equality and approximate equality, where an acceptable range of deviation for approximate equality may be, for example, a difference between the two equals being less than or equal to 5% of either one.

[0050] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0051] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched areas shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the areas of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0052] As shown in FIG1, some embodiments of the present disclosure provide a display device 1000, which can be any device that displays either moving (e.g., video) or fixed (e.g., still image) and either text or images.

[0053] For example, the display device 1000 can be any product or component with display function, such as a television, laptop computer, tablet computer, mobile phone, personal digital assistant (PDA), navigator, wearable device, augmented reality (AR) device, virtual reality (VR) device, in-vehicle display, or flight display.

[0054] In some examples, as shown in Figure 1, the display device 1000 can be a portable display product. For example, the display device 1000 can be a mobile phone as shown in Figure 1.

[0055] In some other examples, as shown in Figure 2, the display device 1000 can be a wearable device. For example, the display device 1000 can be a watch as shown in Figure 2.

[0056] In some embodiments, as shown in Figures 3 and 4, the display device 1000 includes a light-emitting substrate 100, a driving circuit board 200, a housing 300, and a cover plate 400.

[0057] The cover plate 400 is disposed on the light-emitting side of the light-emitting substrate 100. The driving circuit board 200 is disposed on the non-light-emitting side of the light-emitting substrate 100 and connected to the light-emitting substrate 100 to provide light-emitting signals to the light-emitting substrate 100.

[0058] The light-emitting substrate 100 has a light-emitting side 100A and a non-light-emitting side 100B. The light-emitting side 100A refers to the side of the light-emitting substrate 100 that can emit light (the upper side of the light-emitting substrate 100 in Figures 3 and 4), and the non-light-emitting side 100B refers to the other side opposite to the light-emitting side 100A (the lower side of the light-emitting substrate 100 in Figures 3 and 4).

[0059] In addition, the housing 300 can be a box-shaped structure with an opening, the light-emitting substrate 100 and the driving circuit board 200 can be disposed inside the housing 300, and the cover plate 400 is disposed on the light-emitting side of the light-emitting substrate 100 and located at the opening of the housing 300.

[0060] It is understood that the above-mentioned display device 1000 may be a liquid crystal display (LCD) or a mini / micro light emitting display (MLED), and the embodiments disclosed herein are not specifically limited thereto.

[0061] In some embodiments, as shown in FIG3, the display device 1000 can be a liquid crystal display device. In this case, the light-emitting substrate 100 can serve as a backlight in the liquid crystal display device to provide backlight for the display panel 500. The display panel 500 can adjust the intensity (grayscale) of the light passing through the display panel 500 to achieve image display.

[0062] For example, as shown in FIG3, the display device 1000 further includes a display panel 500 and a plurality of optical films 600. The display panel 500 is disposed on the light-emitting side 100A of the light-emitting substrate 100, and the plurality of optical films 600 are disposed between the display panel 500 and the light-emitting substrate 100.

[0063] The optical film 600 modulates the wavelength and / or propagation direction of the light emitted from the light-emitting substrate 100.

[0064] For example, as shown in FIG3, the light-emitting substrate 100 can directly emit white light, which is then modulated by multiple optical films 600 before being emitted to the outside. Alternatively, the light-emitting substrate 100 can also emit light of other colors (e.g., blue light), which is then modulated by multiple optical films 600 to achieve modulation of the emitted wavelength and / or the propagation direction before being emitted to the outside.

[0065] For example, as shown in Figure 3, multiple optical films 600 include a scattering layer, a color conversion layer, a diffuser, and a composite film. The scattering layer, color conversion layer, diffuser, and composite film can, for example, be disposed sequentially away from the light-emitting substrate 100.

[0066] The scattering layer blurs the light emitted from the light-emitting substrate 100 and provides support for the color conversion layer, diffuser, and composite film. The color conversion layer converts light of a certain color emitted by the light-emitting substrate into white light upon excitation, thereby improving the utilization rate of the light energy of the light-emitting substrate. The diffuser homogenizes the light passing through it. The composite film enhances the light extraction efficiency of the light-emitting substrate 100, thereby increasing the display brightness of the display device 1000.

[0067] It should be noted that composite films can include brightness enhancement film (BEF) and reflective polarized brightness enhancement film (DBEF), which use the principles of total internal reflection, refraction and polarization to increase the light flux within a certain angle range, thereby improving the brightness of the display device 1000.

[0068] For example, the light-emitting substrate 100 emits blue light. The color conversion layer may include red quantum dot material, green quantum dot material, and transparent material. When the blue light emitted by the light-emitting substrate 100 passes through the red quantum dot material, it is converted into red light; when the blue light passes through the green quantum dot material, it is converted into green light; the blue light can directly pass through the transparent material; then, the blue, red, and green light are mixed and superimposed in a certain proportion to produce white light. Finally, the scattering layer and diffuser can modulate the incident light from different propagation directions and emit it in a more uniform state, thereby improving the light shadow produced by the light-emitting substrate 100 and improving the display quality of the display device 1000.

[0069] In other embodiments, as shown in FIG4, the display device 1000 can be a miniature light-emitting display device. In this case, the light-emitting substrate 100 can serve as the display panel of the miniature light-emitting display device for direct display. The light-emitting substrate 100 can emit light of multiple colors (e.g., red, blue, and green) to achieve full-color display.

[0070] The following description uses the display device 1000 as an example of a miniature light-emitting display device to illustrate some embodiments of the present disclosure. However, the implementation of the present disclosure is not limited thereto, and any other display device can be considered as long as the same technical concept is applied.

[0071] In some embodiments, as shown in FIG5, the light-emitting substrate 100 includes a driving backplate 10 and a plurality of light-emitting chips 20. The light-emitting chips 20 are disposed on the driving backplate 10.

[0072] As shown in Figure 5, multiple light-emitting chips 20 are arranged in multiple rows and columns. Each row includes at least two light-emitting chips 20 arranged along a first direction X, and each column includes at least two light-emitting chips 20 arranged along a second direction Y. The first direction X intersects the second direction Y, for example, the first direction X is perpendicular to the second direction Y.

[0073] In some examples, multiple light-emitting chips 20 emit the same color, so the light-emitting substrate 100 emits only one color of light. In this case, the light-emitting substrate 100 can serve as a backlight in a liquid crystal display device to provide backlighting for the display panel 500.

[0074] In other examples, the multiple light-emitting chips 20 include red, blue, and green light-emitting chips. The red light-emitting chip emits red light, the blue light-emitting chip emits blue light, and the green light-emitting chip emits green light. In this way, the light-emitting substrate 100 can emit multiple colors of light to achieve full-color display.

[0075] The aforementioned light-emitting chip 20 may include, for example, Micro LED and / or Mini LED.

[0076] In some embodiments, as shown in FIG6, the driving backplane 10 includes a substrate 11 and a plurality of pixel circuits.

[0077] The substrate 11 can be a flexible substrate 11 or a rigid substrate 11. The material used for the substrate 11 can include polymer resin or glass. Exemplarily, the substrate 11 can be flexible, and the material used for the substrate 11 includes polymer resins, such as one of polyethersulfone (PES), polyarylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenyl sulfide granules (PPS), polyimide (PI), polycarbonate (PC), and cellulose acetate propionate (CAP). For example, the substrate 11 may be rigid, including a glass material containing SiO2 as the main component.

[0078] It should be noted that the substrate 11 can be a single-layer or multi-layer structure. For example, if the substrate 11 is a multi-layer structure, it may include a base and a buffer layer disposed on the base. The buffer layer is disposed on the base. The material used for the buffer layer may include inorganic insulating materials such as silicon nitride (SiNx, x>0), silicon oxynitride (SiON), and silicon oxide (SiOx, x>0). The buffer layer is used to provide a good foundation for the formation of thin films when they are fabricated on the substrate 11.

[0079] In some embodiments, the substrate 11 is a glass substrate. In this way, on the one hand, the glass substrate has a very high flatness, which allows multiple light-emitting chips 20 to be precisely mounted on the driving backplate 10, and makes the spacing between the multiple light-emitting chips 20 uniform, which is beneficial to achieving the purpose of high resolution and high image quality display of the display device 1000.

[0080] On the other hand, the glass substrate has very high light transmittance (e.g., transmittance greater than 85%), so that most of the light emitted by the multiple light-emitting chips 20 can be emitted out of the display device 1000, which is beneficial to achieving the purpose of displaying high brightness and high color saturation of the display device 1000.

[0081] On the other hand, the glass substrate has a low coefficient of thermal expansion. During the display process of the display device 1000, the heat emitted by the light-emitting chip 20 will not cause a large change in the size of the glass substrate. In this way, the spacing between multiple light-emitting chips 20 will not change or will only change very little, which is beneficial to improving the display effect of the display device 1000.

[0082] In some embodiments, the pixel circuit and the light-emitting chip 20 are connected to drive the light-emitting chip 20 to emit light.

[0083] In some examples, multiple light-emitting chips 20 are divided into multiple driving units, each driving unit including multiple light-emitting chips 20. A pixel circuit is connected to at least one of the multiple light-emitting chips included in a driving unit.

[0084] For example, each driving unit includes four light-emitting chips 20 connected in series. Of course, each driving unit may also include four, five, seven or eight light-emitting chips 20, and the connection method of multiple light-emitting chips 20 in the driving unit is not limited to series connection, but may also be parallel connection.

[0085] In addition, the light-emitting substrate 100 also includes multiple driving chips, which are connected to the driving circuit board 200. One driving chip is connected to at least one driving unit, that is, one driving chip can drive multiple light-emitting chips 20 in one driving unit to emit light, or one driving chip can also drive multiple light-emitting chips 20 in multiple driving units to emit light respectively.

[0086] In other examples, multiple pixel circuits are connected to the driver circuit board 200, and one pixel circuit is connected to one light-emitting chip 20. In this way, the driver circuit board 200 can transmit light-emitting signals to the light-emitting chip 20 through the pixel circuits to drive the light-emitting chip to emit light.

[0087] In some embodiments, as shown in FIG7, the drive backplate 10 further includes a first conductive layer 12 and a first insulating layer 13.

[0088] The first conductive layer 12 is located on one side of the substrate 11 and includes a first conductive portion 121. The first insulating layer 13 is located on the side of the first conductive layer 12 away from the substrate 11 and has a first opening 131 that penetrates the first insulating layer 13, exposing the first conductive portion 121.

[0089] In some examples, the material of the first conductive layer 12 may include a metal. For example, the material of the first conductive layer 12 may include copper or silver, in which case the first conductive layer 12 has good conductivity and low resistance.

[0090] It is understandable that the first conductive part 121 can be a connecting wire or an electrode block.

[0091] In some embodiments, the portion of the first conductive portion 121 exposed by the first opening 131 is bonded to the light-emitting chip 20.

[0092] In some examples, the portion of the first conductive portion 121 exposed by the first opening 131 is bonded to the light-emitting chip 20 by solder (e.g., solder paste and flux).

[0093] After the portion of the first conductive part 121 exposed by the first opening 131 is bonded to the light-emitting chip 20, the first conductive part 121 undergoes an alloying reaction with the solder. That is, atoms in the first conductive part 121 diffuse into the solder, and atoms in the solder diffuse into the first conductive part 121, thus firmly bonding the portion of the first conductive part 121 exposed by the first opening 131 to the light-emitting chip 20. After bonding, the light-emitting chip 20 on the driving backplate 10 needs to be inspected. Light-emitting chips 20 that fail the inspection need to be replaced. Because the portion of the first conductive part 121 exposed by the first opening 131 undergoes an alloying reaction with the solder, during the removal of the light-emitting chip 20, the solder carries away a portion of the first conductive part 121, causing damage to this portion. Repairing the first conductive part 121 requires removing the film layer on the upper side of the conductive layer 12 before repairing the first conductive layer 12, which is difficult and costly.

[0094] In some embodiments, as shown in FIG7, the driving backplane 10 further includes a second conductive layer 14. The second conductive layer 14 is located on the side of the first conductive layer 12 away from the substrate 11. The second conductive layer 14 includes a second conductive portion 141, which is at least partially located within the first opening 131 and in contact with the sidewall of the first opening 131. The portion of the first conductive portion 121 exposed by the first opening 131 is in contact with the second conductive portion 141, that is, the portion of the first conductive portion 121 exposed by the first opening 131 is connected to the second conductive portion 141. The second conductive portion 141 is used for bonding and connecting with the light-emitting chip 20.

[0095] In some examples, as shown in FIG7, the second conductive portion 141 is bonded to the light-emitting chip 20 by solder (e.g., solder paste and flux).

[0096] In some examples, the material of the second conductive part 141 includes nickel. Nickel has good compatibility with solder. Nickel can form an intermetallic compound with the solder, thereby firmly bonding the driving backplate 10 and the light-emitting chip together. Nickel maintains good stability during the bonding process between the driving backplate 10 and the light-emitting chip 20, and is less prone to problems such as cold solder joints or poor soldering. This improves the reliability of the connection between the light-emitting chip 20 and the driving backplate 10, thereby increasing the lifespan of the display device 1000.

[0097] After the bonding connection is completed, the light-emitting chip 20 on the driver backplane 10 needs to be tested. The light-emitting chip 20 that fails the test needs to be replaced. During the process of removing the light-emitting chip 20, the solder will take away part of the second conductive part 141, causing the second conductive part 141 to be damaged. The multiple second conductive parts 141 are independent of each other. We only need to repair the second conductive part 141 here. The repair difficulty is low and the cost is low.

[0098] In other examples, along a direction perpendicular to the substrate 11 and pointing from the substrate 11 to the first conductive layer 12, the second conductive portion 141 includes a fifth sublayer and a sixth sublayer stacked sequentially. For example, the fifth sublayer is made of nickel, and the sixth sublayer is made of gold.

[0099] Before the driving backplane 10 and the light-emitting chip 20 are bonded together, the sixth sub-layer is used to protect the fifth sub-layer and reduce the risk of the fifth sub-layer being oxidized. During the bonding process between the driving backplane 10 and the light-emitting chip 20, the fifth sub-layer reacts with the solder, that is, gold and tin react to generate tetratin gold, so that the driving backplane 10 and the light-emitting chip 20 are bonded together.

[0100] In some examples, the thickness of the fifth sublayer is 4.5 μm to 5.5 μm. For example, the thickness of the fifth sublayer is 4.5 μm, 4.6 μm, 4.7 μm, 4.8 μm, 4.9 μm, 5.0 μm, 5.1 μm, 5.2 μm, 5.3 μm, 5.4 μm, or 5.5 μm.

[0101] The thickness of the sixth sublayer is 0.04 μm to 0.06 μm. For example, the thickness of the sixth sublayer is 0.04 μm, 0.05 μm, or 0.06 μm.

[0102] In related technologies, the yield rate of bonding between the driving backplane and the light-emitting chip is low. The inventors discovered that the electron-donating capacity of the first insulating layer is greater than that of the first conductive portion. After the first opening is formed, the fluoride ions adsorbed on the sidewalls of the first insulating layer (the etching gas is carbon tetrafluoride or sulfur hexafluoride) are more numerous than those adsorbed on the exposed portion of the first conductive portion. During the formation of the first opening, palladium ions are first used to treat the second conductive portion. The fluoride ions adsorbed on the sidewalls of the first insulating layer are more numerous than those adsorbed on the exposed portion of the first conductive portion. Therefore, the palladium ions adsorbed by fluoride ions on the sidewalls of the first insulating layer are more numerous than those adsorbed on the exposed portion of the first conductive portion. The copper and palladium ions in the first conductive portion react to generate copper ions and elemental palladium. The elemental palladium on the sidewalls of the first insulating layer is more abundant than that on the exposed portion of the first conductive portion. Then nickel ions are deposited. During the deposition of nickel ions, palladium reacts with nickel ions to generate palladium ions and nickel. There is more palladium on the sidewall of the first insulating layer than in the exposed part of the first conductive part. This results in more nickel on the sidewall of the first insulating layer than in the exposed part of the first conductive part. Therefore, the nickel deposition rate on the sidewall of the first insulating layer is higher.

[0103] Along a direction perpendicular to the substrate and pointing from the first conductive layer to the substrate, the angle between the sidewall of the first opening and the substrate remains constant or increases. When the angle between the sidewall of the first opening and the substrate remains constant, the angle between the sidewall of the first opening and the substrate is relatively large; for example, the angle between the sidewall of the first opening and the substrate is greater than 70°. As the angle between the sidewall of the first opening and the substrate gradually increases, the closer to the substrate, the larger the angle between the sidewall of the first opening and the substrate. The angle between the sidewall of the first opening closest to the substrate and the substrate is relatively large (for example, the angle between the sidewall of the first opening closest to the substrate and the substrate is greater than 70°).

[0104] If the angle between the sidewall of the first opening and the substrate is large, or if the angle between the sidewall of the first opening near the substrate and the substrate is large, and the nickel deposition rate at the sidewall of the first insulating layer is high, it will cause nodules (protrusions) at the boundary of the second conductive part away from the substrate. The flatness of the surface of the second conductive part away from the substrate is low, which leads to a low yield of bonding between the driving backplate and the second conductive part, i.e., a low yield of bonding between the driving backplate and the light-emitting chip.

[0105] It should be noted that the second conductive portion 141 includes a first solder portion 1411 and a second solder portion 1412 surrounding the first solder portion 1411. The surface of the first solder portion 1411 away from the substrate 11 is parallel to the substrate 11, that is, the surface of the first solder portion 1411 away from the substrate 11 is a plane. The surface of the second solder portion 1412 away from the substrate 11 has an angle with the substrate 11, that is, the surface of the second solder portion 1412 away from the substrate 11 is an arc surface or a slope. Here, a nodule refers to the portion of the first solder portion 1411 that extends beyond the surface of the second solder portion 1412 away from the substrate 11.

[0106] To address the aforementioned technical problems, some embodiments of this disclosure provide a drive backplate 10. As shown in Figures 7 and 8, along a direction perpendicular to the substrate 11 and pointing from the substrate 11 to the first conductive layer 12, the first insulating layer 13 includes a first insulating portion 132 and a second insulating portion 133 sequentially stacked. The surface of the first insulating portion 132 furthest from the substrate 11 is a first surface 1321, and the surface closest to the substrate 11 is a second surface 1322. The maximum angle between the sidewall of the first opening 131 between the first surface 1321 and the second surface 1322 and the substrate 11 is smaller than the maximum angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11.

[0107] With this configuration, the angle between the sidewall of the first opening 131 in the first insulating portion 132 and the substrate 11 is smaller, which can increase the growth path of nickel on the sidewall of the first opening 131 in the first insulating portion 132. This can also make the vertical dimension (the dimension perpendicular to the direction of the substrate 11) of the nickel grown on the sidewall of the first opening 131 smaller. In this way, the risk of the nickel grown on the sidewall of the first opening 131 exceeding the surface of the second solder portion 1412 away from the substrate 11 can be reduced, that is, the risk of nodules at the boundary of the second conductive portion 141 can be reduced. This is beneficial to improving the flatness of the surface of the second conductive portion 141 away from the substrate 11, improving the bonding yield of the driving backplate 10 and the second conductive portion 141, that is, improving the bonding yield of the driving backplate 10 and the light-emitting chip 20.

[0108] In some embodiments, the maximum included angle between the sidewall of the first opening 131 and the substrate 11 is 60° to 70°. This arrangement allows for a smaller included angle between the entire sidewall of the first opening 131 and the substrate 11, further reducing the path length for nickel growth on the sidewall of the first opening 131 in the first insulating portion 132. The vertical dimension of the nickel grown on the sidewall of the first opening 131 is also smaller, further reducing the risk of nodule formation at the boundary of the second conductive portion 141. This improves the flatness of the surface of the second conductive portion 141 away from the substrate 11 and further increases the yield of the bonding connection between the drive backplate 10 and the second conductive portion 141.

[0109] In some embodiments, the angle between the sidewall of the first opening 131 near the substrate 11 and the substrate 11 is 35° to 45°. This arrangement allows for a smaller angle between the sidewall of the first opening 131 near the substrate 11 and the substrate 11, further increasing the growth path of nickel on the sidewall of the first opening 131 in the first insulating portion 132. The vertical dimension of the nickel grown on the sidewall of the first opening 131 is also smaller, further reducing the risk of nodule formation at the boundary of the second conductive portion 141. This improves the flatness of the surface of the second conductive portion 141 away from the substrate 11 and further increases the yield of the bonding connection between the drive backplate 10 and the second conductive portion 141.

[0110] In some embodiments, the inventors have found through experiments that the thickness of the second insulating portion 133 is greater than the thickness of the first insulating portion 132.

[0111] In some examples, the ratio of the thickness of the second insulating portion 133 to the thickness of the first insulating portion 132 is 1.5 to 2.2. For example, the ratio of the thickness of the second insulating portion 133 to the thickness of the first insulating portion 132 is 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1 or 2.2.

[0112] In some embodiments, as shown in FIG7, the longitudinal section of the sidewall of the first opening 131 in the first insulating portion 132 is a straight line, the longitudinal section of the sidewall of the first opening 131 in the second insulating portion 133 is a straight line, and the angle between the sidewall of the first opening 131 between the first surface 1321 and the second surface 1322 and the substrate 11 is smaller than the angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11.

[0113] In this configuration, the maximum angle between the sidewall of the first opening 131 between the first surface 1321 and the second surface 1322 and the substrate 11 can be smaller than the maximum angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11. This is beneficial to improving the bonding yield of the driving backplate 10 and the second conductive portion 141, that is, improving the bonding yield of the driving backplate 10 and the light-emitting chip 20.

[0114] It should be noted that the longitudinal section is perpendicular to the substrate 11 and passes through the center of the first opening 131.

[0115] In other embodiments, as shown in FIG8, the longitudinal cross-section of the sidewall of the first opening 131 in the first insulating portion 132 is arc-shaped, and the angle between the sidewall of the first opening 131 in the first insulating portion 132 and the substrate 11 gradually decreases along a direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 to the substrate 11. The longitudinal cross-section of the sidewall of the first opening 131 in the second insulating portion 133 is arc-shaped, and the angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11 gradually increases along a direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 to the substrate 11. The angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11 is equal to the angle between the sidewall of the first opening 131 in the third surface 1331 and the substrate 11. The surface of the second insulating portion 133 closest to the substrate 11 is the third surface 1331.

[0116] In this configuration, the maximum angle between the sidewall of the first opening 131 between the first surface 1321 and the second surface 1322 and the substrate 11 can be smaller than the maximum angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11. This is beneficial to improving the bonding yield of the driving backplate 10 and the second conductive portion 141, that is, improving the bonding yield of the driving backplate 10 and the light-emitting chip 20.

[0117] It is understandable that an arc is a line whose slope gradually changes at points along the line.

[0118] In some examples, as shown in Figure 8, the curvature of any two points on the arc of the first insulating portion 132 that are farther from the substrate 11 is greater than the curvature of the other. That is, along a direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 toward the substrate 11, the curvature of the arc in the first insulating portion 132 gradually decreases.

[0119] In this configuration, along a direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 to the substrate 11, the less curved the sidewall of the first opening 131 in the first insulating portion 132 is, the closer it is to the substrate 11, and the smoother the sidewall of the first opening 131 in the first insulating portion 132 is. This is beneficial for enhancing the adhesion of the second conductive portion 141 and the second insulating portion 133, thereby making the connection between the drive backplate 10 and the light-emitting chip 20 more secure and improving the reliability of the display device 1000.

[0120] In some examples, as shown in FIG8, the curvature of the point furthest from the substrate 11 at any two points on the arc of the second insulating portion 133 is less than the curvature of the other. That is, along the direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 to the substrate 11, the curvature of the arc in the second insulating portion 133 decreases.

[0121] In this configuration, the less curved the sidewall of the first opening 131 in the second insulating portion 133 is in the direction perpendicular to the substrate 11 and pointing from the substrate 11 to the first conductive layer 12, the further away from the substrate 11 the sidewall of the first opening 131 in the second insulating portion 133 is, the flatter the sidewall of the first opening 131 in the second insulating portion 133 is, which is beneficial to enhance the adhesion of the first insulating portion 132 to other film layers and improve the reliability of the drive backplate 10.

[0122] In some embodiments, as shown in Figures 7 and 8, the first insulating layer 13 includes a first sublayer 134 and a second sublayer 135. The second sublayer 135 is located between the first sublayer 134 and the first conductive layer 12. The material of the second sublayer 135 is different from the material of the first sublayer 134. For example, the material of the first sublayer 134 includes an organic material, while the material of the second sublayer 135 includes an inorganic material. The first sublayer 134 serves as a mask for the second sublayer 135.

[0123] With this setup, the first sublayer 134 serves as a mask during the etching of the second sublayer 135, eliminating the need to fabricate an additional mask and thus reducing fabrication costs.

[0124] It should be noted that organic insulating materials are typically composed of macromolecular chains with relatively weak intermolecular forces and a loose molecular arrangement. This structure necessitates a certain thickness to ensure sufficient mechanical strength and stability when forming the insulating layer. Organic insulating materials generally possess good flexibility and adaptability, capable of withstanding bending, stretching, and other external forces to a certain extent. To maintain insulation performance during deformation, the organic insulating layer typically requires a certain thickness to provide adequate cushioning and protection; therefore, the first sublayer 134 is relatively thick.

[0125] Inorganic insulating materials typically have a relatively regular crystal structure and strong intermolecular bonding, enabling them to form stable insulating layers with relatively thin thicknesses. However, inorganic insulating materials are generally hard and brittle with poor flexibility, making them prone to breakage under external forces; therefore, they do not require excessive thickness. Consequently, the prepared second sublayer 135 has a relatively thin thickness.

[0126] In some examples, the thickness of the first sublayer 134 is 3 μm to 4 μm. For example, the thickness of the first sublayer 134 is 3 μm, 3.1 μm, 3.2 μm, 3.3 μm, 3.4 μm, 3.5 μm, 3.6 μm, 3.7 μm, 3.8 μm, 3.9 μm, or 4.0 μm.

[0127] The thickness of the second sublayer 135 is 0.3 μm to 0.4 μm. For example, the thickness of the first sublayer 134 is 0.3 μm, 0.31 μm, 0.32 μm, 0.33 μm, 0.34 μm, 0.35 μm, 0.36 μm, 0.37 μm, 0.38 μm, 0.39 μm or 0.4 μm.

[0128] As shown in Figures 7 and 8, along a direction perpendicular to the substrate 11 and pointing from the substrate 11 to the first conductive layer 12, the first sub-layer 134 includes a third insulating portion 1341 and a fourth insulating portion 1342 stacked sequentially. The surface of the third insulating portion 1341 furthest from the substrate 11 is a fifth surface 1041, and the surface closest to the substrate 11 is a sixth surface 1042. The maximum angle between the sidewall of the first opening 131 between the fifth surface 1041 and the sixth surface 1042 and the substrate 11 is smaller than the maximum angle between the sidewall of the first opening 131 in the fourth insulating portion 1342 and the substrate 11. Furthermore, the angle between the sidewall of the first opening 131 in the second sub-layer 135 and the substrate 11 is less than or equal to the angle between the sidewall of the first opening 131 in the third insulating portion 1341 and the substrate 11. In this case, the third insulating portion 1341 and the second sub-layer 135 constitute the aforementioned first insulating portion 132, and the fourth insulating portion 1342 constitutes the aforementioned second insulating portion 133.

[0129] In this configuration, the maximum angle between the sidewall of the first opening 131 between the first surface 1321 and the second surface 1322 and the substrate 11 can be smaller than the maximum angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11. This is beneficial to improving the bonding yield of the driving backplate 10 and the second conductive portion 141, that is, improving the bonding yield of the driving backplate 10 and the light-emitting chip 20.

[0130] It is understood that the material of the first sublayer 134 is an organic material. The part of the first sublayer 134 further away from the substrate 11 has less moisture, that is, the part further away from the substrate 11 is harder, and the part closer to the substrate 11 has more moisture, that is, the part closer to the substrate 11 is softer. During the etching process of the first sublayer 134, the part of the first sublayer 134 far away from the substrate 11 is not easy to be etched, and the part closer to the substrate 11 is easy to be etched. Therefore, the thickness of the fourth insulating part 1342 after etching is greater than the thickness of the third insulating part 1341.

[0131] In some examples, the inventors have experimented and found that the ratio of the thickness of the fourth insulating portion 1342 to the thickness of the third insulating portion 1341 is 2 to 3. For example, the ratio of the thickness of the fourth insulating portion 1342 to the thickness of the third insulating portion 1341 is 2, 2.1, 2.2, 2.3, 2.4, 2.5, 2.6, 2.7, 2.8, 2.9, or 3.

[0132] In some embodiments, as shown in FIG7, the longitudinal section of the sidewall of the first opening 131 in the third insulating portion 1341 is straight, the longitudinal section of the sidewall of the first opening 131 in the fourth insulating portion 1342 is straight, and the angle between the sidewall of the first opening 131 between the fifth surface 1041 and the sixth surface 1042 and the substrate 11 is smaller than the angle between the sidewall of the first opening 131 in the fourth insulating portion 1342 and the substrate 11.

[0133] In this configuration, the maximum angle between the sidewall of the first opening 131 between the first surface 1321 and the second surface 1322 and the substrate 11 can be smaller than the maximum angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11. This is beneficial to improving the bonding yield of the driving backplate 10 and the second conductive portion 141, that is, improving the bonding yield of the driving backplate 10 and the light-emitting chip 20.

[0134] In other embodiments, as shown in FIG8, the longitudinal cross-section of the sidewall of the first opening 131 in the third insulating portion 1341 is curved, the longitudinal cross-section of the sidewall of the first opening 131 in the fourth insulating portion 1342 is curved, the angle between the sidewall of the first opening 131 in the third insulating portion 1341 and the substrate 11 gradually decreases, the angle between the sidewall of the first opening 131 in the fourth insulating portion 1342 and the substrate 11 gradually increases, and the angle between the sidewall of the first opening 131 in the sixth surface 1042 and the substrate 11 is equal to the angle between the sidewall of the first opening 131 in the seventh surface 1043 and the substrate 11. The surface of the fourth insulating portion 1342 closest to the substrate 11 is the seventh surface 1043.

[0135] In this configuration, the maximum angle between the sidewall of the first opening 131 between the first surface 1321 and the second surface 1322 and the substrate 11 can be smaller than the maximum angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11. This is beneficial to improving the bonding yield of the driving backplate 10 and the second conductive portion 141, that is, improving the bonding yield of the driving backplate 10 and the light-emitting chip 20.

[0136] In some examples, as shown in Figure 8, the curvature of the point furthest from the substrate 11 at any two points on the arc of the third insulating portion 1341 is greater than that of the point furthest from the substrate 11. That is, along a direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 to the substrate 11, the curvature of the arc in the third insulating portion 1341 gradually decreases.

[0137] In this configuration, along a direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 to the substrate 11, the less curved the sidewall of the first opening 131 in the third insulating portion 1341 is, the closer it is to the substrate 11, and the smoother the sidewall of the first opening 131 in the third insulating portion 1341 is. This is beneficial for enhancing the adhesion of the second conductive portion 141 and the fourth insulating portion 1342, thereby making the connection between the drive backplate 10 and the light-emitting chip 20 more secure and improving the reliability of the display device 1000.

[0138] In some examples, as shown in Figure 8, the curvature of the point furthest from the substrate 11 at any two points on the arc of the fourth insulating portion 1342 is less than the curvature of the other. That is, along a direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 to the substrate 11, the curvature of the arc in the fourth insulating portion 1342 gradually increases.

[0139] In this configuration, the less curved the sidewall of the first opening 131 in the fourth insulating portion 1342 is in a direction perpendicular to and away from the substrate 11, the further away from the substrate 11 the flatter the sidewall of the first opening 131 in the fourth insulating portion 1342 is, which is beneficial to enhance the adhesion of the third insulating portion 1341 to other film layers and improve the reliability of the drive backplate 10.

[0140] In some embodiments, as shown in FIG7, the longitudinal section of the sidewall of the first opening 131 in the second sublayer 135 is a straight line, and the angle between the sidewall of the first opening 131 in the second sublayer 135 and the substrate 11 is equal to the angle between the sidewall of the first opening 131 in the third insulating portion 1341 and the substrate 11.

[0141] In this configuration, the maximum angle between the sidewall of the first opening 131 between the first surface 1321 and the second surface 1322 and the substrate 11 can be smaller than the maximum angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11. This is beneficial to improving the bonding yield of the driving backplate 10 and the second conductive portion 141, that is, improving the bonding yield of the driving backplate 10 and the light-emitting chip 20.

[0142] In other embodiments, as shown in FIG8, the longitudinal cross-section of the sidewall of the first opening 131 in the second sublayer 135 is an arc. Along the direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 to the substrate 11, the angle between the sidewall of the first opening 131 in the second sublayer 135 and the substrate 11 gradually decreases, and the angle between the sidewall of the first opening 131 in the eighth surface 1351 and the substrate 11 is equal to the angle between the sidewall of the first opening 131 in the sixth surface 1042 and the substrate 11; wherein, the surface of the second sublayer away from the substrate is the eighth surface 1351.

[0143] In this configuration, the maximum angle between the sidewall of the first opening 131 between the first surface 1321 and the second surface 1322 and the substrate 11 can be smaller than the maximum angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11. This is beneficial to improving the bonding yield of the driving backplate 10 and the second conductive portion 141, that is, improving the bonding yield of the driving backplate 10 and the light-emitting chip 20.

[0144] In some examples, as shown in Figure 8, the curvature of the point furthest from the substrate 11 at any two points in the arc of the second sublayer 135 is less than the curvature of the other. That is, along a direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 to the substrate 11, the curvature of the arc of the second sublayer 135 gradually decreases.

[0145] In this configuration, the less curved the sidewall of the first opening 131 in the second sublayer 135 is along a direction perpendicular to and close to the substrate 11, the smoother the sidewall of the first opening 131 in the second sublayer 135 is, the closer it is to the substrate 11. This is beneficial for enhancing the adhesion of the second conductive part 141 and the second sublayer 135, thereby making the connection between the driving backplate 10 and the light-emitting chip 20 more secure and improving the reliability of the driving backplate 10.

[0146] In some embodiments, as shown in FIG9, the drive backplate 10 further includes a second insulating layer 15, which is located on the side of the first insulating layer 13 and the second conductive layer 14 away from the substrate 11. This can further enhance the corrosion resistance of the first conductive layer 12. The material of the second insulating layer 15 includes inorganic materials, and the film thickness of the second insulating layer 15 is uniform.

[0147] Based on this, as shown in FIG9, the second insulating layer 15 has a second opening 151, which exposes at least a portion of the second conductive portion 141. In this way, the light-emitting chip 20 can be connected to the second conductive portion 141 through the second opening 151.

[0148] In some examples, as shown in Figure 9, the distance between the surface of the second weld 1412 away from the substrate 11 and the substrate 11 gradually decreases along the direction from the first weld 1411 to the second weld 1412.

[0149] As shown in Figure 9, the orthographic projection of the second opening 151 onto the substrate 11 is within the range of the orthographic projection of the first solder joint 1411 onto the substrate 11. This arrangement allows the light-emitting chip 20 to be bonded only to the surface of the first solder joint 1411 furthest from the substrate 11, i.e., the light-emitting chip 20 is bonded to the plane. This improves the reliability of the bonding connection between the driving backplate 10 and the light-emitting chip 20, and increases the yield of the bonding connection between the driving backplate 10 and the light-emitting chip 20.

[0150] It is understandable that the light-emitting chip 20 is only connected to the surface (plane) of the first solder part 1411 away from the substrate 11, which can make the light-emitting chip 20 precisely bonded to the driving back plate 10, thereby making the spacing between multiple light-emitting chips 20 uniform, which is conducive to achieving the purpose of displaying high resolution and high image quality of the display device 1000.

[0151] In some embodiments, along a direction perpendicular to the substrate 11 and pointing from the first conductive layer 12 to the substrate 11, the second insulating layer 15 includes a seventh insulating portion and an eighth insulating portion that are stacked sequentially.

[0152] With this configuration, the second insulating layer 15 can be completed through two deposition processes, which reduces the risk of defects (e.g., bumps and / or depressions) in the second insulating layer 15.

[0153] In some embodiments, as shown in FIG10, some embodiments of this disclosure also provide a method for preparing the drive backplane 10 as described in the above embodiments. As shown in FIG10, the preparation method includes S100 to S300.

[0154] As shown in Figure 11, in step S100, a first conductive layer 12 is prepared on the substrate 11.

[0155] The first conductive layer 12 can be formed by at least one of thin film deposition, electroplating, and chemical plating processes. The first conductive layer 12 includes a first conductive portion 121.

[0156] As shown in Figure 12, in step S200, a first insulating layer 13 is prepared on the side of the first conductive layer 12 away from the substrate 11.

[0157] The first insulating layer 13 can be formed by at least one of thin film deposition, electroplating, and chemical plating. The first insulating layer 13 has a first opening 131 penetrating through it, exposing at least a portion of the first conductive portion 121. Along a direction perpendicular to the substrate 11 and pointing from the substrate 11 to the first conductive layer 12, the first insulating layer 13 includes a first insulating portion 132 and a second insulating portion 133 sequentially stacked. The surface of the first insulating portion 132 furthest from the substrate 11 is a first surface 1321, and the surface closest to the substrate 11 is a second surface 1322. The maximum angle between the sidewall of the first opening 131 between the first surface 1321 and the second surface 1322 and the substrate 11 is smaller than the maximum angle between the sidewall of the first opening 131 in the second insulating portion 133 and the substrate 11.

[0158] As shown in Figure 13, in step S300, a second conductive layer 14 is prepared on the side of the first conductive layer 12 away from the substrate 11.

[0159] The second conductive layer 14 can be formed by at least one of thin film deposition, electroplating, and chemical plating. The second conductive layer 14 includes a second conductive portion 141, at least a portion of which is located within the first opening 131 and in contact with the sidewall of the first opening 131.

[0160] For example, along a direction perpendicular to the substrate 11 and pointing from the substrate 11 to the first conductive layer 12, the second conductive portion 141 includes a fifth insulating portion and a sixth insulating portion stacked sequentially. For example, the material of the fifth insulating portion includes nickel, and the material of the sixth insulating portion includes gold.

[0161] Through the above preparation method, the angle between the sidewall of the first opening 131 in the first insulating part 132 and the substrate 11 is smaller, which can increase the growth path of nickel on the sidewall of the first opening 131 in the first insulating part 132. The vertical dimension (the dimension perpendicular to the direction of the substrate 11) of the nickel grown on the sidewall of the first opening 131 is smaller. In this way, the risk of the nickel grown on the sidewall of the first opening 131 exceeding the surface of the second solder part 1412 away from the substrate 11 can be reduced, that is, the risk of nodules at the boundary of the second conductive part 141 is reduced. This is beneficial to improve the flatness of the surface of the second conductive part 141 away from the substrate 11, and improve the bonding yield of the driving backplate 10 and the second conductive part 141, that is, improve the bonding yield of the driving backplate 10 and the light-emitting chip 20.

[0162] In some embodiments, as shown in FIG14, S200 includes S210 to S240.

[0163] As shown in Figure 15, in step S210, a first type of initial insulating layer 1 is formed on the side of the first conductive layer 12 away from the substrate 11.

[0164] The first type of initial insulating layer 1 can be formed by at least one of thin film deposition, electroplating, and chemical plating processes. The first type of initial insulating layer 1 covers the first conductive layer 12.

[0165] As shown in Figure 16, in step S220, a second type of initial insulating layer 2 is formed on the side of the first type of initial insulating layer 1 away from the substrate 11.

[0166] The second type of initial insulating layer 2 can be formed by at least one of thin film deposition, electroplating, and chemical plating. The second type of initial insulating layer 2 has a first initial opening 201 penetrating through the second type of initial insulating layer 2, and the orthographic projection of the first initial opening 201 on the substrate 11 is located within the range of the orthographic projection of the first conductive part 121 on the substrate 11.

[0167] As shown in Figure 17, in step S230, the first type of initial insulating layer 1 is etched through the first initial opening 201 using a first etching gas to form a second initial opening 202.

[0168] The second initial opening 202 penetrates the first type of initial insulating layer 1, and the orthographic projection of the second initial opening 202 on the substrate 11 is located within the range of the orthographic projection of the first conductive part 121 on the substrate 11.

[0169] For example, the angle between the sidewall of the first initial opening 201 and the substrate 11 is 70° to 80°. The angle between the sidewall of the second initial opening 202 and the substrate 11 is 70° to 80°.

[0170] For example, along a direction perpendicular to and close to the substrate 11, the angle between the sidewall of the first initial opening 201 and the substrate 11 gradually increases, the angle between the sidewall of the second initial opening 202 and the substrate 11 gradually increases, and the angle between the sidewall of the second initial opening 202 and the substrate 11 is greater than the angle between the sidewall of the first initial opening 201 and the substrate 11.

[0171] As shown in Figure 18, in step S240, the sidewalls of the first initial opening 201 and the second initial opening 202 are etched using a second etching gas to form the first opening 131.

[0172] The etching rate of the second etching gas is less than that of the second etching gas.

[0173] For example, the maximum angle between the sidewall of the first opening 131 and the substrate 11 is 60° to 70°, and the angle between the sidewall of the first opening 131 near the substrate 11 and the substrate 11 is 35° to 45°.

[0174] In some embodiments, both the first etching gas and the second etching gas include oxygen, and further include carbon tetrafluoride and / or sulfur hexafluoride, and the flow ratio of oxygen to carbon tetrafluoride in the first etching gas is greater than the flow ratio of oxygen to carbon tetrafluoride in the second etching gas. This allows the etching rate of the second etching gas to be lower than that of the first etching gas.

[0175] In some examples, the flow rate ratio of oxygen in the first etching gas to carbon tetrafluoride and / or sulfur hexafluoride is 1 / 9 to 1. For example, the flow rate ratio of oxygen in the first etching gas to carbon tetrafluoride and / or sulfur hexafluoride is 1 / 9, 1 / 8, 1 / 7, 1 / 6, 1 / 5, 1 / 4, 1 / 3, 1 / 2, or 1.

[0176] In some examples, the flow rate ratio of oxygen in the second etching gas to carbon tetrafluoride and / or sulfur hexafluoride is 1 / 39 to 1 / 19. For example, the flow rate ratio of oxygen in the second etching gas to carbon tetrafluoride and / or sulfur hexafluoride is 1 / 39, 1 / 38, 1 / 37, 1 / 36, 1 / 35, 1 / 34, 1 / 33, 1 / 32, 1 / 31, 1 / 30, 1 / 29, 1 / 28, 1 / 27, 1 / 26, 1 / 25, 1 / 24, 1 / 23, 1 / 22, 1 / 21, 1 / 20, or 1 / 19.

[0177] Understandably, the low oxygen content in the second etching gas results in a low fluoride ion content. Therefore, after the first opening 131 is formed, fewer fluoride ions are adsorbed on the sidewall of the first insulating layer 13, and fewer elemental nickel particles are present on the sidewall of the first insulating layer 13. This reduces the growth rate of nickel on the sidewall of the first opening 131, thereby reducing the risk of nodule formation at the boundary of the second conductive portion 141. This improves the flatness of the surface of the second conductive portion 141 away from the substrate 11, and increases the yield of bonding between the driving backplate 10 and the second conductive portion 141, i.e., improving the yield of bonding between the driving backplate 10 and the light-emitting chip 20.

[0178] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0179] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A drive backplane, comprising: Glass substrate; A first conductive layer is located on one side of the substrate, and the first conductive layer includes a first conductive portion; A first insulating layer is located on the side of the first conductive layer away from the substrate. The first insulating layer has a first opening penetrating the first insulating layer, and the first opening exposes the first conductive portion. Along a direction perpendicular to the substrate and pointing from the substrate to the first conductive layer, the first insulating layer includes a first insulating portion and a second insulating portion stacked sequentially. The surface of the first insulating portion away from the substrate is a first surface, and the surface closer to the substrate is a second surface. The maximum angle between the sidewall of the first opening between the first surface and the second surface and the substrate is smaller than the maximum angle between the sidewall of the first opening in the second insulating portion and the substrate. The second conductive layer is located on the side of the first conductive layer away from the substrate. The second conductive layer includes a second conductive portion, which is at least partially located within the first opening and in contact with the sidewall of the first opening. The second conductive portion is used to directly contact the solder and undergo an alloying reaction with the solder.

2. The drive backplane according to claim 1, wherein, The thickness of the second insulating part is greater than the thickness of the first insulating part.

3. The drive backplane according to claim 2, wherein, The ratio of the thickness of the second insulating part to the thickness of the first insulating part is 1.5 to 2.

2.

4. The drive backplane according to any one of claims 1 to 3, wherein, The longitudinal section of the sidewall of the first opening in the first insulating part is a straight line, the longitudinal section of the sidewall of the first opening in the second insulating part is a straight line, and the angle between the sidewall of the first opening between the first surface and the second surface and the substrate is smaller than the angle between the sidewall of the first opening in the second insulating part and the substrate.

5. The drive backplane according to any one of claims 1 to 4, wherein, The longitudinal cross-section of the sidewall of the first opening in the first insulating portion is arc-shaped, and the angle between the sidewall of the first opening in the first insulating portion and the substrate gradually decreases along a direction perpendicular to the substrate and pointing from the first conductive layer to the substrate; the longitudinal cross-section of the sidewall of the first opening in the second insulating portion is arc-shaped, and the angle between the sidewall of the first opening in the second insulating portion and the substrate gradually increases along a direction perpendicular to the substrate and pointing from the first conductive layer to the substrate, and the angle between the sidewall of the first opening in the first surface and the substrate is equal to the angle between the sidewall of the first opening in the third surface and the substrate; wherein, the surface of the second insulating portion near the substrate is the third surface.

6. The drive backplane according to claim 5, wherein, Of any two points on the arc of the first insulating portion, the curvature of the point farther from the substrate is greater than the curvature of the other; and / or, of any two points on the arc of the second insulating portion, the curvature of the point farther from the substrate is less than the curvature of the other.

7. The drive backplane according to any one of claims 1 to 6, wherein, The first insulating layer includes: The first sublayer, the material of the first sublayer being an organic material. The second sublayer is located between the first sublayer and the first conductive layer. The material of the second sublayer is an inorganic material, and the first sublayer is used as a mask for the second sublayer.

8. The drive backplane according to claim 7, wherein, Along a direction perpendicular to the substrate and pointing from the substrate to the first conductive layer, the first sub-layer includes a third insulating portion and a fourth insulating portion stacked sequentially. The surface of the third insulating portion away from the substrate is a fifth surface, and the surface close to the substrate is a sixth surface. The maximum angle between the sidewall of the first opening between the fifth surface and the sixth surface and the substrate is smaller than the maximum angle between the sidewall of the first opening in the fourth insulating portion and the substrate. The angle between the sidewall of the first opening in the second sublayer and the substrate is less than or equal to the angle between the sidewall of the first opening in the third insulating portion and the substrate.

9. The drive backplane according to claim 8, wherein, The thickness of the fourth insulating part is greater than the thickness of the third insulating part.

10. The drive backplane according to claim 9, wherein, The ratio of the thickness of the fourth insulating part to the thickness of the third insulating part is 2 to 3.

11. The drive backplane according to any one of claims 8 to 10, wherein, The longitudinal section of the sidewall of the first opening in the third insulating part is a straight line, the longitudinal section of the sidewall of the first opening in the fourth insulating part is a straight line, and the angle between the sidewall of the first opening between the fifth surface and the sixth surface and the substrate is smaller than the angle between the sidewall of the first opening in the fourth insulating part and the substrate.

12. The drive backplane according to any one of claims 8 to 10, wherein, The longitudinal cross-section of the sidewall of the first opening in the third insulating portion is curved, and the longitudinal cross-section of the sidewall of the first opening in the fourth insulating portion is curved. Along a direction perpendicular to the substrate and pointing from the first conductive layer to the substrate, the angle between the sidewall of the first opening in the third insulating portion and the substrate gradually decreases; along a direction perpendicular to the substrate and pointing from the first conductive layer to the substrate, the angle between the sidewall of the first opening in the fourth insulating portion and the substrate gradually increases, and the angle between the sidewall of the first opening in the sixth surface and the substrate is equal to the angle between the sidewall of the first opening in the seventh surface and the substrate; wherein, the surface of the fourth insulating portion closest to the substrate is the seventh surface.

13. The drive backplane according to claim 12, wherein, Of any two points on the arc of the third insulating portion, the curvature of the point farther from the substrate is greater than the curvature of the other; and / or, of any two points on the arc of the fourth insulating portion, the curvature of the point farther from the substrate is less than the curvature of the other.

14. The drive backplane according to any one of claims 8 to 13, wherein, The longitudinal section of the sidewall of the first opening in the second sublayer is a straight line, and the angle between the sidewall of the first opening in the second sublayer and the substrate is equal to the angle between the sidewall of the first opening in the third insulating part and the substrate.

15. The drive backplane according to any one of claims 8 to 13, wherein, The longitudinal cross-section of the sidewall of the first opening in the second sublayer is an arc. Along the direction perpendicular to the substrate and pointing from the first conductive layer to the substrate, the angle between the sidewall of the first opening in the second sublayer and the substrate gradually decreases, and the angle between the sidewall of the first opening in the eighth surface and the substrate is equal to the angle between the sidewall of the first opening in the fifth surface and the substrate; the surface of the second sublayer away from the substrate is the eighth surface.

16. The drive backplane according to any one of claims 1 to 15, further comprising: A second insulating layer is located on the side of the first insulating layer and the second conductive layer away from the substrate. The second insulating layer has a second opening that exposes at least a portion of the second conductive portion.

17. The drive backplane according to claim 16, wherein, The second conductive portion includes a first solder portion and a second solder portion surrounding the first solder portion. The surface of the first solder portion away from the substrate is parallel to the substrate, and the surface of the second solder portion away from the substrate has an angle with the substrate. The orthographic projection of the second opening on the substrate is located within the range of the orthographic projection of the first solder portion on the substrate.

18. The drive backplane according to any one of claims 1 to 17, wherein, The maximum included angle between the sidewall of the first opening and the substrate is 60° to 70°.

19. The drive backplane according to any one of claims 1 to 18, wherein, The angle between the sidewall of the first opening near the substrate and the substrate is 35° to 45°.

20. A display device comprising a drive backplate as claimed in any one of claims 1 to 19.

21. A method for preparing a light-emitting substrate, comprising: A first conductive layer is prepared on the substrate; The first conductive layer includes a first conductive portion; A first insulating layer is formed on the side of the first conductive layer away from the substrate; The first insulating layer has a first opening that penetrates the first insulating layer, and the first opening exposes at least a portion of the first conductive portion; Along a direction perpendicular to the substrate and pointing from the substrate to the first conductive layer, the first insulating layer includes a first insulating portion and a second insulating portion stacked together; the surface of the first insulating portion away from the substrate is a first surface, and the surface close to the substrate is a second surface; the maximum angle between the sidewall of the first opening between the first surface and the second surface and the substrate is smaller than the maximum angle between the sidewall of the first opening in the second insulating portion and the substrate. A second conductive layer is formed on the side of the first conductive layer away from the substrate; the second conductive layer includes a second conductive portion, at least a portion of which is located within the first opening and in contact with the sidewall of the first opening.

22. The preparation method according to claim 21, wherein, The step of preparing a first insulating layer on the side of the first conductive layer away from the substrate includes: A first type of initial insulating layer is formed on the side of the first conductive layer away from the substrate; the first type of initial insulating layer The layer covers the first conductive layer; A second type of initial insulating layer is formed on the side of the first type of initial insulating layer away from the substrate; the second type of initial insulating layer has a first initial opening penetrating the second type of initial insulating layer, the orthographic projection of the first initial opening on the substrate being within the range of the orthographic projection of the first conductive portion on the substrate; A first etching gas is used to etch the first type of initial insulating layer through the first initial opening to form a second initial opening. The second initial opening penetrates the first type of initial insulating layer, and the orthographic projection of the second initial opening on the substrate is located within the range of the orthographic projection of the first conductive part on the substrate. The sidewalls of the first initial opening and the second initial opening are etched using a second etching gas to form the first opening; wherein the etching rate of the second etching gas is less than the etching rate of the second etching gas.

23. The preparation method according to claim 22, wherein, Both the first etching gas and the second etching gas contain oxygen, and also contain carbon tetrafluoride and / or sulfur hexafluoride, and the flow ratio of oxygen to carbon tetrafluoride in the first etching gas is greater than the flow ratio of oxygen to carbon tetrafluoride in the second etching gas.

24. The preparation method according to claim 23, wherein, The flow ratio of oxygen in the first etching gas to carbon tetrafluoride and / or sulfur hexafluoride is 1 / 9 to 1; and, the flow ratio of oxygen in the second etching gas to carbon tetrafluoride and / or sulfur hexafluoride is 1 / 39 to 1 / 19.

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