High-energy particle detection method and apparatus

Abstract

The present application provides a high-energy particle detection method and apparatus, configured for acquiring an LET energy spectrum of a radiation environment in a low-cost manner, so as to acquire an LET energy spectrum of a high-energy particle radiation environment, and enable high-energy particle detection. The high-energy particle detection apparatus comprises a first CMOS image sensing unit and a processing unit; the first CMOS image sensing unit is configured for generating a first light spot image on the basis of high-energy particle radiation, the first light spot image comprising at least one first light spot, and light spots of different sizes among the at least one first spot respectively corresponding to different LET values; and the processing unit is configured for generating an LET energy spectrum according to the first light spot image.

Description

A method and apparatus for high-energy particle detection

[0001] Cross-references to related applications

[0002] This application claims priority to Chinese Patent Application No. 202411640404.7, filed on November 15, 2024, entitled "A High-Energy Particle Detection Method and Apparatus", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of engineering technology, and in particular to a method and apparatus for high-energy particle detection. Background Technology

[0004] With the development of technology, more and more devices (such as satellite devices) need to operate in high-energy particle radiation environments, and the devices are damaged to varying degrees by radiation. In order to enable the devices to work normally in high-energy particle radiation environments, it is necessary to collect the linear energy loss (LET) spectrum in the high-energy particle radiation environment in order to select devices that are compatible with the high-energy particle radiation environment.

[0005] How to obtain the LET spectrum of high-energy particle radiation environment in a low-cost manner is an urgent problem to be solved. Summary of the Invention

[0006] This application provides a high-energy particle detection method and apparatus to obtain the LET energy spectrum of the radiation environment in a low-cost manner, thereby obtaining the LET energy spectrum of the high-energy particle radiation environment and realizing high-energy particle detection.

[0007] In a first aspect, this application provides a high-energy particle detection device. The device includes a first CMOS image sensing unit and a processing unit; the first CMOS image sensing unit is used to generate a first light spot image based on high-energy particle radiation; the first light spot image includes at least one first light spot, and different sizes of light spots in the at least one first light spot correspond to different LET values; the processing unit is used to generate an LET energy spectrum based on the first light spot image.

[0008] This device can map high-energy particle radiation in space through a first CMOS image sensing unit, thereby generating a LET energy spectrum and enabling the detection of high-energy particles. Compared to traditional detectors, the CMOS image sensing unit is smaller and less expensive, and can be compatible with more high-energy particle detection applications.

[0009] In some examples, high-energy particle detection devices can be used to measure high-energy particle radiation inside or outside a satellite (operating in space). Due to the partial obstruction of radiation by the satellite's external packaging material, there are significant differences in radiation between the inside and outside of the satellite system, as well as between different locations within the satellite system. Traditional detectors are too large and their deployment is limited, thus requiring complex calculations to obtain the high-energy particle radiation at the target location. However, the high-energy particle detection device provided in this application is relatively small in size, placing less pressure on the satellite. Therefore, it can be accurately configured near the target location, resulting in higher accuracy of high-energy particle detection results. Furthermore, it eliminates the need for extensive redundant calculations, greatly reducing computational pressure and burden.

[0010] In one possible design, the first CMOS image sensing unit is specifically used to: generate a first spot image based on high-energy particle radiation within a first exposure time; the processing unit is further used to: adjust the first exposure time to a second exposure time, where the second exposure time is less than the first exposure time, when the proportion of at least one first spot in the first spot image is greater than a first threshold, and / or the overlap index of the spots in the first spot image is greater than a second threshold; and / or, adjust the first exposure time to a third exposure time, where the third exposure time is greater than the first exposure time, when the proportion of at least one first spot in the first spot image is less than or equal to a third threshold, using the first CMOS image sensing unit.

[0011] With this design, the high-energy particle detection device can perform self-checks based on the light spot image, reducing the exposure time when overexposure occurs and increasing the exposure time when underexposure occurs, thereby achieving timely adjustment of the exposure time, improving the accuracy of the LET energy spectrum, and enhancing the precision of high-energy particle detection.

[0012] In some scenarios, such as when a satellite may pass through the Van Allen belt or encounter a sudden solar event, the flux of high-energy particles changes significantly. In these scenarios, the advantage of high-energy particle detectors automatically adjusting exposure time is even more pronounced, which can greatly improve the accuracy of LET energy spectra and reduce the burden on operators.

[0013] In one possible design, the processing unit is specifically configured to: generate an LET energy spectrum based on a first spot image and a locally stored first correspondence; the first correspondence is used to indicate the correspondence between at least one first spot and an LET value.

[0014] With this design, the high-energy particle detection device can generate an LET energy spectrum based on the first spot image and the first correspondence between the first spot and the LET value stored locally, thereby improving the accuracy of the LET energy spectrum.

[0015] In one possible design, the device further includes a second CMOS image sensing unit; the second CMOS image sensing unit is used to generate a second spot image based on high-energy particle radiation; the second spot image includes at least one second spot, and different sizes of spots in the at least one second spot correspond to different LET values; the range of LET values ​​detected by the second CMOS image sensing unit and the first image sensing unit are different; the processing unit is specifically used to generate an LET energy spectrum based on the first spot image and the second spot image.

[0016] This design allows the high-energy particle detection device to include multiple CMOS image sensing units. Different image sensing units can be used to measure high-energy particles in different energy spectrum ranges, thus expanding the detection range of the high-energy particle detection device and improving the accuracy of LET energy spectrum.

[0017] In one possible design, the processing unit is specifically used to: generate an LET energy spectrum based on a first spot image, a second spot image, a locally stored first correspondence, and a locally stored second correspondence; wherein the first correspondence is used to indicate the correspondence between at least one first spot and an LET value, and the second correspondence is used to indicate the correspondence between at least one second spot and an LET value.

[0018] Using this design, the high-energy particle detector can generate LET energy spectra based on different light spot images and the correspondence between the light spots and LET in the light spot images, thereby improving the accuracy of LET energy spectra.

[0019] In one possible design, the device also includes an analog-to-digital conversion unit for converting the first spot image from an analog signal to a digital signal.

[0020] Using this design, the high-energy particle detection device can realize the conversion between digital and analog signals of light spot images, which facilitates interoperability between the CMOS image sensing unit and the processing unit.

[0021] In one possible design, the processing unit is a processing unit in the baseband module on the satellite; and / or; the processing unit shown is a processing unit in the intermediate frequency module on the satellite.

[0022] With this design, when the high-energy particle detection device is deployed on a satellite, it can utilize the processing units of other payloads on the satellite; in other words, the high-energy particle detection device can share processing units with other payloads, reducing the load on the satellite.

[0023] Secondly, this application provides a high-energy particle detection method, which can be applied to a high-energy particle detection device, or components (such as processors, chips, chip systems, circuits, functional modules, or others) or software modules within the high-energy particle detection device. The method may include: generating a first light spot image based on high-energy particle radiation; the first light spot image includes at least one first light spot, with different sizes of light spots in the at least one first light spot corresponding to different LET values; and generating an LET energy spectrum based on the first light spot image.

[0024] In one possible design, the aforementioned process of generating a first spot image based on high-energy particle radiation may specifically include: generating a first spot image based on high-energy particle radiation within a first exposure time; the method further includes: adjusting the first exposure time to a second exposure time when the proportion of at least one first spot in the first spot image is greater than a first threshold, and / or the spot index in the first spot image is greater than a second threshold, wherein the second exposure time is less than the first exposure time; and / or adjusting the first exposure time to a third exposure time when the proportion of at least one first spot in the first spot image is less than or equal to a third threshold, wherein the third exposure time is greater than the first exposure time.

[0025] In one possible design, the aforementioned process of generating the LET energy spectrum based on the first spot image may specifically include: generating the LET energy spectrum based on the first spot image and a first correspondence stored locally; the first correspondence is used to indicate the correspondence between at least one first spot and the LET value.

[0026] In one possible design, the method further includes: generating a second spot image based on high-energy particle radiation; the second spot image includes at least one second spot, and different sizes of spots in the at least one second spot correspond to different LET values; the range of LET values ​​corresponding to at least one first spot and at least one second spot are different; the aforementioned process of generating an LET energy spectrum based on the first spot image may specifically include: generating an LET energy spectrum based on the first spot image and the second spot image.

[0027] In one possible design, the aforementioned process of generating the LET energy spectrum based on the first spot image and the second spot image may specifically include: generating the LET energy spectrum based on the first spot image, the second spot image, a locally stored first correspondence, and a locally stored second correspondence; wherein the first correspondence is used to indicate the correspondence between at least one first spot and the LET value, and the second correspondence is used to indicate the correspondence between at least one second spot and the LET value.

[0028] In one possible design, the method further includes converting the first spot image from an analog signal to a digital signal.

[0029] Thirdly, this application provides a high-energy particle detection device. The device includes a first CMOS image sensing unit and a communication unit; the first CMOS image sensing unit is used to generate a first light spot image based on high-energy particle radiation; the first light spot image includes at least one first light spot, and different sizes of light spots in the at least one first light spot correspond to different LET values; the communication unit is used to send the first light spot image and a locally stored first correspondence to a data processing device, the first light spot image and the first correspondence being used to generate an LET energy spectrum; the first correspondence is used to indicate the correspondence between at least one first light spot and LET values.

[0030] This device maps high-energy particle radiation in space using a first CMOS image sensing unit, generating a light spot image. This image is then sent to a data processing unit, which generates an LET energy spectrum based on the first light spot image and a locally stored correspondence between the first light spot and LET values, thus enabling the detection of high-energy particles. Compared to traditional detectors, the CMOS image sensing unit is smaller and less expensive, and can be compatible with more high-energy particle detection applications.

[0031] In some examples, high-energy particle detection devices can be used to measure high-energy particle radiation inside or outside a satellite (in service in space). When the satellite's own computing power is limited, the communication function of the aforementioned device can be used to send the spot image directly to the data processing device. The data processing device does not need to be deployed on the satellite, which can reduce the satellite's load and computing pressure.

[0032] In one possible design, the first CMOS image sensing unit is specifically used to: generate a first spot image based on high-energy particle radiation within a first exposure time; the device further includes a processing unit; the processing unit is used to: adjust the first exposure time to a second exposure time, where the second exposure time is less than the first exposure time, when the proportion of at least one first spot in the first spot image is greater than a first threshold, and / or the spot index in the first spot image is greater than a second threshold; and / or, adjust the first exposure time to a third exposure time, where the third exposure time is greater than the first exposure time, when the proportion of at least one first spot in the first spot image is less than or equal to a third threshold, via the first CMOS image sensing unit.

[0033] With this design, the high-energy particle detection device can perform self-checks based on the light spot image, reducing the exposure time when overexposure occurs and increasing the exposure time when underexposure occurs, thereby achieving timely adjustment of the exposure time, improving the accuracy of the LET energy spectrum, and enhancing the precision of high-energy particle detection.

[0034] In some scenarios, such as when a satellite may pass through the Van Allen belt or encounter a sudden solar event, the flux of high-energy particles changes significantly. In these scenarios, the advantage of high-energy particle detectors automatically adjusting exposure time is even more pronounced, which can greatly improve the accuracy of LET energy spectra and reduce the burden on operators.

[0035] In one possible design, the device further includes a second CMOS image sensing unit; the second CMOS image sensing unit is used to generate a second spot image based on high-energy particle radiation; the second spot image includes at least one second spot, and different sizes of the at least one second spot correspond to different LET values; the communication unit is further used to send the second spot image and a locally stored second correspondence to the data processing device, the second spot image and the second correspondence being used to generate an LET energy spectrum; the second correspondence is used to indicate the correspondence between at least one second spot and LET values.

[0036] Using this design, the high-energy particle detector can generate LET energy spectra based on different light spot images and the correspondence between the light spots and LET in the light spot images, thereby improving the accuracy of LET energy spectra.

[0037] In one possible design, the device also includes an analog-to-digital conversion unit for converting the first spot image from an analog signal to a digital signal.

[0038] Using this design, the high-energy particle detection device can convert digital signals and analog signals of the light spot image, facilitating interoperability between the high-energy particle detection device and the data processing device.

[0039] Fourthly, this application provides a high-energy particle detection method, which can be applied to a high-energy particle detection device, or components (such as processors, chips, chip systems, circuits, functional modules, or others) or software modules within the high-energy particle detection device. The method may include: generating a first spot image based on high-energy particle radiation; the first spot image includes at least one first spot, with different sizes of spots in the at least one first spot corresponding to different linear energy deposition (LET) values; sending the first spot image and a locally stored first correspondence to a data processing device, the first spot image and the first correspondence being used to generate an LET energy spectrum; the first correspondence being used to indicate the correspondence between at least one first spot and the LET value.

[0040] In one possible design, the aforementioned process of generating a first spot image based on high-energy particle radiation may specifically include: generating a first spot image based on high-energy particle radiation within a first exposure time; the method further includes: adjusting the first exposure time to a second exposure time when the proportion of at least one first spot in the first spot image is greater than a first threshold, and / or the spot index in the first spot image is greater than a second threshold, wherein the second exposure time is less than the first exposure time; and / or adjusting the first exposure time to a third exposure time when the proportion of at least one first spot in the first spot image is less than or equal to a third threshold, wherein the third exposure time is greater than the first exposure time.

[0041] In one possible design, the method further includes: generating a second spot image based on high-energy particle radiation; the second spot image includes at least one second spot, and different sizes of the at least one second spot correspond to different LET values; sending the second spot image and a locally stored second correspondence to a data processing device, the second spot image and the second correspondence being used to generate an LET energy spectrum; the second correspondence being used to indicate the correspondence between at least one second spot and the LET value.

[0042] In one possible design, the method further includes converting the first spot image from an analog signal to a digital signal.

[0043] Fifthly, this application provides a high-energy particle detection method, which can be applied to a data processing device, or a component (such as a processor, chip, chip system, circuit, functional module, or others) or software module within the data processing device. The method may include: receiving a first light spot image and a first correspondence from a high-energy particle detection device, the first correspondence indicating a correspondence between at least one first light spot and a LET value; and generating an LET energy spectrum based on the first light spot image and the first correspondence.

[0044] Using this method, the data processing device can generate an LET energy spectrum based on the first spot image and the first correspondence between the first spot and the LET value stored locally, thereby improving the accuracy of the LET energy spectrum.

[0045] In one possible design, the method further includes: receiving a second spot image from a high-energy particle detection device and a locally stored second correspondence, the second correspondence indicating a correspondence between at least one second spot and a LET value; the aforementioned process of generating an LET energy spectrum based on the first spot image and the first correspondence may specifically include: generating an LET energy spectrum based on the first spot image, the first correspondence, the second spot image, and the second correspondence.

[0046] Using this method, the data processing device can generate LET energy spectra based on different spot images and the correspondence between the spot and LET in the spot image, thereby improving the accuracy of LET energy spectra.

[0047] Sixthly, embodiments of this application provide a communication device. The device can implement the method described in any possible implementation of the second or fourth aspect described above. The device possesses the functions of the high-energy particle detection device described above.

[0048] In one optional implementation, the device may include modules, units, or means corresponding one-to-one with the methods / operations / steps / actions performed in any possible implementation of the second or fourth aspect. These modules, units, or means may be hardware circuits, software, or a combination of hardware circuits and software. In another optional implementation, the device includes a processing module (sometimes also called a processing unit) and a communication module (sometimes also called a transceiver module, transceiver unit, communication unit, etc.). The communication module is capable of both sending and receiving functions. When the communication module performs the sending function, it may be called a sending unit (sometimes also called a sending module); when the communication module performs the receiving function, it may be called a receiving unit (sometimes also called a receiving module). The sending unit and the receiving unit may be the same functional module, referred to as the communication module, which performs both sending and receiving functions; or, the sending unit and the receiving unit may be different functional modules, with "communication module" being a collective term for these functional modules.

[0049] For example, when the apparatus is used to perform the method described in either the second or fourth aspect, the apparatus may include a processing module and a communication module.

[0050] In a seventh aspect, embodiments of this application also provide a communication device, including a processor for executing a computer program (or computer-executable instructions) stored in a memory, which, when executed, causes the device to perform the method as described in any possible implementation of either the second or fourth aspect.

[0051] In one possible implementation, the processor and memory are integrated together.

[0052] In another possible implementation, the memory is located outside the communication device.

[0053] The communication device also includes a communication interface for communicating with other devices, such as sending or receiving data and / or signals. Exemplarily, the communication interface may be a transceiver, circuit, bus, module, or other type of communication interface.

[0054] Eighthly, a computer-readable storage medium is provided for storing a computer program or instructions that, when executed, cause the method described in any possible implementation of either the second or fourth aspect, or the method shown in any possible implementation of the second or fourth aspect, to be implemented.

[0055] Ninth aspect, a computer program product containing instructions is provided, which, when run on a computer, enables the method described in any possible implementation of either the second or fourth aspect to be implemented.

[0056] In a tenth aspect, embodiments of this application also provide a communication device for performing the method described in any possible implementation of the second or fourth aspect described above.

[0057] Eleventhly, a chip or chip system is provided, comprising logic circuitry (or, as understood, a processor, which may include logic circuitry, etc.), and further comprising input / output interfaces. The input / output interfaces can be used to input messages or to output messages. The input / output interfaces can be the same interface, i.e., the same interface can implement both sending and receiving functions; or, the input / output interface includes an input interface and an output interface, the input interface being used to implement the receiving function, i.e., to receive messages; and the output interface being used to implement the sending function, i.e., to send messages. The logic circuitry can be used to perform operations other than the sending and receiving functions in any possible implementation of the second or fourth aspect described above; the logic circuitry can also be used to transmit messages to the input / output interfaces or to receive messages from other communication devices from the input / output interfaces. The chip system can be used to implement the methods described in any possible implementation of the second or fourth aspect described above. The chip system can be composed of chips or can include chips and other discrete devices.

[0058] Optionally, the chip system may also include a memory, which can be used to store instructions, and the logic circuits can call the instructions stored in the memory to implement the corresponding functions.

[0059] In a twelfth aspect, a communication system is provided, which may include a high-energy particle detection device and a data processing device. The high-energy particle detection device may be used to implement the methods shown in the second or fourth aspect and any possible implementation thereof, and the data processing device may be used to implement the methods shown in the fifth aspect and any possible implementation thereof.

[0060] The technical effects of the above aspects can be found in the descriptions of the beneficial effects of the corresponding solutions in the first, third, or fifth aspects above, and will not be repeated here. Attached Figure Description

[0061] Figure 1 is a schematic diagram of a high-energy particle detection system provided in an embodiment of this application;

[0062] Figure 2a is a schematic diagram of the imaging principle of a CMOS image sensing unit provided in an embodiment of this application;

[0063] Figure 2b is a schematic diagram of the imaging principle of another CMOS image sensing unit provided in an embodiment of this application;

[0064] Figure 3a is a schematic diagram of a high-energy particle detection device provided in an embodiment of this application;

[0065] Figure 3b is a schematic diagram of a high-energy particle detection device provided in an embodiment of this application;

[0066] Figure 3c is a size comparison diagram of a high-energy particle detector and a CMOS image sensor provided in an embodiment of this application;

[0067] Figure 4 is a flowchart of a high-energy particle detection method provided in an embodiment of this application;

[0068] Figure 5 is an example diagram of a LET standard spectrum provided in an embodiment of this application;

[0069] Figure 6 is an example of a light spot image provided in an embodiment of this application;

[0070] Figure 7a is an example diagram of a spot image statistics table provided in an embodiment of this application;

[0071] Figure 7b is an example diagram of another spot image statistics table provided in an embodiment of this application;

[0072] Figure 7c is an example diagram of another spot image statistics table provided in an embodiment of this application;

[0073] Figure 8 is a flowchart of another high-energy particle detection method provided in an embodiment of this application;

[0074] Figure 9 is a flowchart illustrating a CMOS image sensing unit selection method according to an embodiment of this application.

[0075] Figure 10 is a schematic diagram of the structure of a communication device provided in an embodiment of this application;

[0076] Figure 11 is a schematic diagram of another communication device provided in an embodiment of this application. Detailed Implementation

[0077] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. The specific operational methods in the method embodiments can also be applied to the device embodiments or system embodiments; therefore, the implementation of the device and the method can refer to each other, and repeated details will not be repeated.

[0078] In the description of this application, unless otherwise stated, " / " signifies "or," for example, A / B can mean A or B. "And / or" in this application merely describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. Furthermore, in the description of this application, "at least one" refers to one or more items, and "multiple" refers to two or more items. In the description of this application, terms such as "first" and "second" are used only for descriptive purposes and should not be construed as indicating or implying relative importance or order.

[0079] To facilitate understanding by those skilled in the art, some terms used in this application will be explained below.

[0080] 1. LET spectrum: refers to the distribution of LET values ​​as a particle or radiation passes through a substance, depending on the depth or distance traveled through the medium.

[0081] 2. Commercial off-the-shelf (COTS) devices: These are standard, commercially available products that can be purchased directly from the market without the need for custom design or manufacturing. In some examples, COTS devices can be used in multiple fields such as electronic engineering, aerospace, and software development.

[0082] In some communication scenarios, devices (or semiconductor materials) need to operate in an environment of high-energy particle radiation; however, high-energy particles deposit energy inside the device, causing losses, known as radiation damage. The degree of radiation damage to the device is directly affected by the LET value and the LET energy spectrum distribution.

[0083] In some examples, satellite internet, comprised of multiple satellites, could be a crucial component of future communication networks. Devices or instruments carried on satellites to perform specific tasks are called payloads. Circuit modules and mechanical structures support payload operation, ensuring it can perform its tasks in a stable, controlled environment. These components are the basic materials used to manufacture the circuit modules. Most satellites operate in the space environment, which typically includes a large number of high-energy particles; therefore, components on satellites may suffer radiation damage, leading to performance degradation or even failure, thus affecting satellite functionality.

[0084] In order to obtain the LET energy spectrum of the radiation environment in a low-cost manner, thereby determining the device lifetime and improving the accuracy and reliability of satellite device selection, this application provides an example of a high-energy particle detection system.

[0085] The embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0086] As shown in Figure 1, the high-energy particle detection system may include the following functional modules: at least one CMOS image sensing unit and a processing unit. The CMOS image sensing unit is capable of generating different light spot images under different high-energy particle radiation; the processing unit has certain data processing capabilities.

[0087] In some examples, the CMOS image sensing unit in Figure 1 can also be replaced with other sensors that have the function of generating images based on high-energy particle radiation. Specific implementations can be referenced to each other, and will not be elaborated in this application.

[0088] In some examples, the processing unit can be an off-the-shelf field programmable gate array (FPGA) chip, an advanced RISC machine (ARM), a digital signal processor (DSP) chip, or a central processing unit (CPU), and this application does not limit this. When the CMOS image sensing unit is deployed on a satellite, the processing unit can be the processing unit corresponding to any payload function in the satellite.

[0089] Optionally, the high-energy particle detection system may also include at least one of the following functional modules: an analog-to-digital converter (ADC), a clock unit, a storage unit, a power management unit, and a communication unit.

[0090] In some examples, multiple functional modules in a high-energy particle detection system can be coupled into a single functional module. For instance, a processing unit can be coupled to a storage unit to enable the processing module to perform storage functions. Similarly, a communication unit can be coupled to a storage unit to enable the communication unit to perform storage functions. Furthermore, a CMOS image sensing unit can be coupled to an analog-to-digital converter to enable the CMOS image sensing unit to convert light spot images from analog signals to digital signals.

[0091] The imaging principle of the CMOS image sensing unit will be briefly explained below with reference to Figures 2a and 2b.

[0092] Figure 2a is a schematic diagram of the imaging unit in a CMOS image sensing unit. The CMOS image sensing unit consists of at least one reverse-biased PN junction diode, a control switch (or switch), and a bus; one end of the PN junction is connected to the ground line (GND) to form the reference potential in the circuit; the other end of the PN junction is connected to the bus through the switch.

[0093] Referring again to Figure 2a, when a high-energy incident particle passes through the PN junction, the incident particle undergoes energy deposition in the material (the part shown in magnification in the figure). The deposited energy is absorbed by electrons in silicon (Si), causing ionization of the Si substrate and generating a large number of non-equilibrium carriers. Under the influence of an electric field, these non-equilibrium electrons and holes will drift, reducing the built-in voltage of the diode. The basic principle can be found in the following formula:

[0094] Where dE is the energy lost by the particle as it passes through the medium, and dx is the path length of the particle in the medium. Z1 represents the energy deposited (or lost) by a particle per unit path length; Z2 is the charge number of the incident particle, Z3 is the charge number of the target atom; m is the mass of the incident ion, M2 is the mass of the target atom; E is the incident ion energy, E4 is the incident ion energy. eh The average ionization energy of the target material is eh; P is the resistivity constant of the target material, N at This represents the atomic density of the target material.

[0095] Based on the aforementioned formula, it can be seen that the voltage drop is positively correlated with the non-equilibrium carriers generated by the incident ions, that is, the voltage drop is positively correlated with the energy of the incident particles deposited.

[0096] Figure 2b is a schematic diagram of the principle of high-energy particle irradiation response in a CMOS image sensing unit.

[0097] Referring to ① in Figure 2b, before the exposure test, the switch is first turned on to inject voltage into the reverse-biased PN junction so that the electric field strength of the built-in electric field reaches Evcc, at which point the voltage is labeled VCC; referring to ② in Figure 2b, after the voltage is injected, the switch is turned off so that the N terminal of the PN junction remains open; referring to ③ in Figure 2b, during the exposure process, when there is incident particle radiation (rad), the non-equilibrium carriers generated by the incident particles will weaken the built-in electric field of the device (CMOS image sensing unit). After rebalancing, the electric field strength of the built-in electric field reaches Erad, at which point the voltage is labeled Urad; referring to ④ in Figure 2b, after the exposure is completed, the switch is turned on again, and the bus reads the voltage of the PN junction.

[0098] Referring again to Figure 2b, based on the voltage read above, by comparing the voltage difference before and after, the energy of radiation deposition can be deduced.

[0099] In one possible design, one or more modules of the high-energy particle detection system shown in Figure 1 are combined to form a high-energy particle detection device, which can be connected (e.g., via an interface) to the high-energy particle detection system, thereby enabling the acquisition of the LET spectrum of the radiation environment in a low-cost manner.

[0100] Optionally, the aforementioned high-energy particle detection system may further include a data processing device. In some examples, the high-energy particle detection device may be deployed in a satellite, while the data processing device may be deployed on the ground. When the high-energy particle detection device lacks data processing capabilities or has insufficient data processing capabilities, it can feed the data to be processed back to the data processing device to obtain the LET energy spectrum of the radiation environment. In other examples, both the high-energy particle detection device and the data processing device may be deployed in a satellite; this application does not impose any limitations on this.

[0101] The high-energy particle detection device includes at least one CMOS image sensing unit (or can be replaced by other image sensors with similar functions in the COTS device); the high-energy particle detection device may also include other modules, which can be set according to actual needs, and this application does not limit them.

[0102] The structures of two high-energy particle detection devices are described below with reference to Figures 3a and 3b.

[0103] As shown in Figure 3a, the high-energy particle detection device includes at least one CMOS image sensing unit (only one is shown in the figure), an ADC, and a processing unit (an FPGA chip is shown in the figure as an example). The high-energy particle detection device also includes a power management unit, a storage unit, and a clock unit, which provide power, storage, and clock functions for the high-energy particle detection device, respectively. The different functional components are connected by circuits.

[0104] Optionally, the high-energy particle detection device may further include at least one interface. This interface can be used to establish a connection with other devices (e.g., payloads in a satellite) within a high-energy particle detection system (e.g., a satellite system) using standard protocols and physical interfaces. This interface can reference conventional techniques in the art to ensure compatibility with different high-energy particle detection systems. In some examples, the interface may be a standard interface, a small form-factor pluggable (SFP) interface, or a gold finger interface; this application does not limit the specific type. Based on this, one or more high-energy particle detection devices can be connected to the satellite via the interface, expanding the energy range of high-energy particle detection.

[0105] Optionally, the high-energy particle detection device shown in Figure 3a, as a standalone device, can be connected to a traditional satellite system via an interface, allowing it to be placed inside the satellite for more accurate detection of the LET energy spectrum of the satellite's internal radiation environment. Furthermore, one or more high-energy particle detection devices can be installed at multiple locations on the satellite or on the same platform as needed before or during satellite service, avoiding waste of hardware resources.

[0106] As shown in Figure 3b, the high-energy particle detection device can be embedded in a high-energy particle detection system (e.g., a satellite system). This high-energy particle detection device includes at least one CMOS image sensing unit. The high-energy particle detection device can share at least one of the following functional modules with the satellite system: a processing unit (ARM in the example), a clock unit, and a power management unit. For example, the aforementioned processing unit is a processing unit in the baseband module of the satellite; or, the aforementioned processing unit is a processing unit in the intermediate frequency module of the satellite; or, the aforementioned processing unit is a processing unit in the radio frequency module of the satellite. It should be understood that the aforementioned processing unit can be a processing unit in any module of the satellite where computing resources are redundant, and this application does not limit this.

[0107] Optionally, the high-energy particle detection device can be embedded in any chip (onboard computer chip) within the satellite; this application does not impose any limitation. For example, the satellite includes a PCBA chip, which performs satellite payload functions (non-high-energy particle detection). This PCBA chip includes basic units such as processing units, storage units, and power management units. A CMOS image sensing unit is deployed on this PCBA chip, and the processing unit with computing capabilities within the PCBA chip controls the CMOS image sensing unit, thereby enabling data reading, processing, and transmission. Based on this, multiple CMOS image sensing units with different sensitivities can be deployed in the satellite, thereby expanding the energy range of high-energy particle detection; these multiple CMOS image sensing units can be deployed in different locations, and this application does not impose any limitation.

[0108] Using the design scheme provided by the high-energy particle detection device shown in Figure 3b, necessary functional components (such as CMOS image sensing units) can be embedded in the satellite system, and some functional components in the satellite can be reused to construct a high-energy particle detection device, realizing the detection of the LET energy spectrum of the radiation environment. Referring to Figure 3c, the size of the detectors traditionally used to realize high-energy particle detection is usually as shown in Figure 3c(a) or (b), the size of a coin is usually as shown in Figure 3c(c), and the size of the key functional component (CMOS image sensing unit) in Figure 3b is shown in Figure 3c(d). The dimensions of each part in Figure 3c are obtained by proportional scaling. It can be seen that the high-energy particle detection device shown in Figure 3b has a small volume and mass, which can reduce the cost of high-energy particle detection.

[0109] Furthermore, taking satellite systems as an example, due to the external packaging materials blocking some radiation, there is a significant difference in radiation between the inside and outside of the satellite, and also a large difference in radiation at different locations within the satellite system. Traditional detectors are too large and their deployment is limited, thus requiring complex calculations to obtain the high-energy particle radiation at the target location. However, the high-energy particle detection devices shown in Figures 3a and 3b are relatively small in size and can be accurately positioned near the target location. The high-energy particle detection results at this location are more accurate, and no excessive redundant calculations are required, greatly reducing computational pressure and burden. In some scenarios, the high-energy particle detection results at this location can be used to select satellite devices for that location, thereby making the selection of satellite devices more accurate.

[0110] The following detailed description, with reference to Figure 4, illustrates a high-energy particle detection method provided by this application, which is used to obtain the LET energy spectrum of a radiation environment in a low-cost manner. This method can be applied to the high-energy particle detection system shown in Figure 1. The method can be executed by a high-energy particle detection device as shown in Figure 3a or 3b, which includes one or more CMOS image sensing units and a processing unit. During the execution of the high-energy particle detection method, the high-energy particle detection device is located in the high-energy particle radiation environment to be detected; for example, the high-energy particle detection device is deployed in a satellite, and the satellite operates in the space environment (i.e., the high-energy particle radiation environment to be detected). For ease of description, different CMOS image sensing units are distinguished by identification, designated as the first CMOS image sensing unit and the second CMOS image sensing unit, respectively. As shown in Figure 4, the high-energy particle detection method may include:

[0111] S401: The first CMOS image sensing unit generates a first spot image based on high-energy particle radiation; the first spot image includes at least one first spot, and different sizes of spots in the at least one first spot correspond to different LET values.

[0112] Before the high-energy particle detection device (including the first CMOS image sensing unit) enters the high-energy particle radiation environment to be detected (e.g., before the satellite enters the space environment), any CMOS image sensing unit in the high-energy particle detection device (e.g., the first CMOS image sensing unit) can undergo ground calibration experiments. That is, a high-energy particle environment with different LET values ​​is generated in a ground-simulated space, and the geometric features of the noise image generated by the CMOS image sensing unit under the action of high-energy particles with different LET values ​​are determined (the spot size is used as an example in the following text), thereby obtaining the correspondence between the spot size and the LET value. This correspondence can be referred to in Figure 5. In the embodiments of this application, the correspondence obtained for the first CMOS image sensing unit is marked as the first correspondence; correspondingly, the high-energy particle detection device stores the first correspondence locally.

[0113] Assuming the LET value detected by the first CMOS image sensing unit ranges from 0 to 40 MeV per gram (g) -1 per square centimeter (cm) 2 This application provides an example LET standard spectrum diagram as shown in Figure 5. Referring to Figure 5, the LET value is 10 meVg. - 1 cm 2 The spot size corresponding to the high-energy particles is designated as L1; the LET value is 20 meVg. -1 cm 2 The spot size corresponding to the high-energy particles is designated as L2; ​​the LET value is 30 meVg. -1 cm 2 The spot size corresponding to the high-energy particles is designated as L3; the LET value is 40 meVg. -1 cm 2 The spot size corresponding to the high-energy particles is designated as L4.

[0114] In one possible design, the process of the first CMOS image sensing unit generating a first spot image based on high-energy particle radiation specifically includes: the first CMOS image sensing unit generating a first spot image based on high-energy particle radiation within a first exposure time.

[0115] It should be understood that exposure time is an important parameter for generating spot images. When overexposure occurs, the number of spots in the spot image is large, and the probability of spot overlap is high, which will cause errors in the statistical results. When underexposure occurs, the number of spots in the spot image is small, which requires a higher sampling frequency, resulting in higher computational costs and lower reference value of the statistical results.

[0116] Optionally, the processing unit may reduce the exposure time when the first spot image is overexposed; and / or, the processing unit may increase the exposure time when the first spot image is underexposed. The method by which the processing unit determines whether the image is overexposed or underexposed can refer to conventional solutions and is not limited in this application.

[0117] For example, Figure 6(a) is an example of a normal exposure bokeh image, which includes multiple bokeh spots that are relatively easy to distinguish; Figure 6(b) is an example of an overexposed bokeh image, which includes multiple bokeh spots that are relatively dense (a large number of bokeh spots); Figure 6(c) is another example of an overexposed bokeh image, which includes multiple bokeh spots that are not easily distinguishable (high overlap of bokeh spots); Figure 6(d) is an example of an underexposed bokeh image (a small number of bokeh spots), which includes multiple bokeh spots that are relatively sparse (a small number of bokeh spots).

[0118] In some examples, the processing unit may adjust the first exposure time to a second exposure time, where the second exposure time is shorter than the first exposure time, if at least one first spot accounts for a proportion greater than a first threshold (e.g., 25%) in the first spot image, and / or the overlap index of the spots in the first spot image is greater than a second threshold (e.g., 10%); and / or, the processing unit may also adjust the first exposure time to a third exposure time, where the third exposure time is longer than the first exposure time, if at least one first spot accounts for a proportion less than or equal to a third threshold (e.g., 5%) in the first spot image. It should be noted that the specific values ​​of the thresholds in the aforementioned examples can be set according to actual conditions.

[0119] In the aforementioned examples, the overlap index can be determined using conventional image processing techniques, and this application does not impose any limitations on it. For example, the overlap index can be characterized by the number of incomplete-outline spots contained in the first spot image; the repetition index can be characterized by the ratio of the number of incomplete-outline spots in the first spot image to the total number of spots in the first spot image; the repetition index can be characterized by the area of ​​the incomplete-outline spots contained in the first spot image; the repetition index can be characterized by the ratio of the area of ​​the incomplete-outline spots included in the first spot image to the area of ​​the first spot image; the repetition index can be characterized by the number of acute angles formed at the intersection of any two spots in the first spot image.

[0120] During satellite operation, the amount of high-energy particle radiation in the space environment may change; for example, the satellite may pass through the Van Allen belts or encounter sudden solar events, in which case the radiation particle flux will increase significantly, while in other cases the radiation amount will be relatively low. Therefore, by adopting the method described above, the high-energy particle detection device can adjust the exposure time of the first CMOS image sensing unit in a timely manner during operation, thereby acquiring effective data efficiently and timely, and improving the accuracy of high-energy particle detection.

[0121] In one possible design, when the high-energy particle detection device also includes an analog-to-digital conversion unit, the high-energy particle detection method may further include: the analog-to-digital conversion unit converting the first spot image from an analog signal to a digital signal.

[0122] In another possible design, when the first CMOS image sensing unit is coupled to the analog-to-digital converter, the first CMOS image sensing unit can directly generate a first spot image of a digital signal.

[0123] Optionally, when the high-energy particle detection device further includes a second CMOS image sensing unit, the high-energy particle detection method may also include S402. The numbers of S401 and S402 do not limit the execution order.

[0124] S402: The second CMOS image sensing unit generates a second spot image based on high-energy particle radiation; the second spot image includes at least one second spot, and different sizes of spots in the at least one second spot correspond to different LET values.

[0125] The second CMOS image sensing unit and the first image sensing unit detect LET values ​​within different ranges. For example, the first CMOS image sensing unit detects LET values ​​in the range of 0–40 meVg. -1 cm 2 The LET value detected by the second CMOS image sensing unit ranges from 40 to 80 meVg. -1 cm2 .

[0126] Before the high-energy particle detection device (including the second CMOS image sensing unit) enters the high-energy particle radiation environment to be detected (e.g., before the satellite enters the space environment), a ground calibration test is performed on the second CMOS image sensing unit to obtain the correspondence between the spot size and the LET value. The process of performing the ground calibration test on the second CMOS image sensing unit can refer to the ground calibration test performed on the first CMOS image sensing unit in S401. In the embodiments of this application, the correspondence obtained for the second CMOS image sensing unit is marked as the second correspondence; correspondingly, the high-energy particle detection device stores the second correspondence locally.

[0127] In one possible design, the process by which the second CMOS image sensing unit generates the second spot image based on high-energy particle radiation specifically includes: the second CMOS image sensing unit generating the second spot image based on high-energy particle radiation within a fourth exposure time. Optionally, the processing unit may reduce the exposure time when the second spot image is overexposed; and / or, the processing unit may increase the exposure time when the second spot image is underexposed. The process by which the processing unit adjusts the exposure time of the second CMOS image sensing unit can refer to the process by which the processing unit adjusts the exposure time of the first CMOS image sensing unit in S401.

[0128] It should be understood that S402 is an optional step, which can be performed or not performed depending on the requirements of high-energy particle detection.

[0129] S403: The processing unit generates the LET energy spectrum. When S402 is not executed, the processing unit can generate the LET energy spectrum based on the first spot image. When S402 is executed, the processing unit can generate the LET energy spectrum based on the first spot image and the second spot image.

[0130] Optionally, the process of the processing unit generating the LET energy spectrum based on the first spot image specifically includes: the processing unit generating the LET energy spectrum based on the first spot image and a first correspondence stored locally; the first correspondence is used to indicate the correspondence between at least one first spot and the LET value.

[0131] In some examples, the processing unit counts the number of high-energy particles with different LET values ​​based on the spot size of the first spot in the first spot image generated in S401 and the aforementioned first correspondence. Assuming the first spot image is (a) in Figure 6 and the first correspondence is as described in Figure 5, the table shown in Figure 7a can be obtained; where the experimental data represents the coordinate position corresponding to each spot.

[0132] Based on the table shown in Figure 7a, the processing unit can use the LET values ​​in the table as parameters for the X-axis and the number of light spots in the table as parameters for the Y-axis, and plot a curve on the coordinate axes to obtain the LET energy spectrum corresponding to the first light spot image. In some examples, the processing unit can also adjust the parameters in the table shown in Figure 7a before plotting the LET energy spectrum. This application does not limit the method of plotting the LET energy spectrum.

[0133] Optionally, the process of the processing unit generating the LET energy spectrum based on the first spot image and the second spot image specifically includes: the processing unit generating the LET energy spectrum based on the first spot image, the second spot image, the locally stored first correspondence, and the locally stored second correspondence; wherein, the first correspondence is used to indicate the correspondence between at least one first spot and the LET value, and the second correspondence is used to indicate the correspondence between at least one second spot and the LET value.

[0134] In some examples, the processing unit counts the number of high-energy particles with different LET values ​​based on the spot size and first correspondence of the first spot in the first spot image generated in S401, and the spot size and second correspondence of the second spot in the second spot image generated in S402. For example, the processing unit can simultaneously count the data corresponding to the first spot image and the data corresponding to the second spot image; or, the processing unit can count the data corresponding to the first spot image and the data corresponding to the second spot image separately, and then merge the two sets of data to obtain the final data. Assuming that the data corresponding to the first spot image is shown in Figure 7a, and the data corresponding to the second spot image is shown in Figure 7b, merging the two sets of data yields the table shown in Figure 7c.

[0135] Based on the table shown in Figure 7c, the processing unit can use the LET value in the table shown in Figure 7c as the parameter of the X-axis and the number of light spots in the table shown in Figure 7c as the parameter of the Y-axis. By plotting the curve on the coordinate axis, the LET energy spectrum corresponding to the first light spot image can be obtained.

[0136] The following, with reference to Figure 8, details another high-energy particle detection method provided in this application, which is used to obtain the LET energy spectrum of a radiation environment in a low-cost manner. This method is applied to the high-energy particle detection system shown in Figure 1. The high-energy particle detection system includes a high-energy particle detection device and a data processing device. The high-energy particle detection device may include one or more CMOS image sensing units, and may also include a processing unit. During the execution of the high-energy particle detection method, the high-energy particle detection device is located in the high-energy particle radiation environment to be detected; for example, the high-energy particle detection device is deployed in a satellite, and the satellite operates in the space environment (i.e., the high-energy particle radiation environment to be detected). For ease of description, different CMOS image sensing units are distinguished by identification, and are respectively identified as the first CMOS image sensing unit and the second CMOS image sensing unit. As shown in Figure 8, the high-energy particle detection method may include:

[0137] S801: The first CMOS image sensing unit generates a first spot image based on high-energy particle radiation; the first spot image includes at least one first spot, and different sizes of spots in the at least one first spot correspond to different linear energy deposition (LET) values.

[0138] Referring to the description in S401, before the high-energy particle detection device (including the first CMOS image sensing unit) enters the high-energy particle radiation environment to be detected (e.g., before the satellite is put into service in the space environment), a ground calibration test is performed on the first CMOS image sensing unit to obtain the correspondence between the size of the light spot and the LET value, i.e., the first correspondence; accordingly, the high-energy particle detection device stores the first correspondence locally.

[0139] In one possible design, the process of the first CMOS image sensing unit generating a first spot image based on high-energy particle radiation specifically includes: the first CMOS image sensing unit generating a first spot image based on high-energy particle radiation within a first exposure time.

[0140] Based on the aforementioned design, when the high-energy particle detection device further includes a processing unit, the high-energy particle detection method may further include: when the proportion of at least one first spot in the first spot image is greater than a first threshold, and / or the spot index in the first spot image is greater than a second threshold, the processing unit adjusts the first exposure time to a second exposure time through the first CMOS image sensing unit, wherein the second exposure time is less than the first exposure time; and / or when the proportion of at least one first spot in the first spot image is less than or equal to a third threshold, the processing unit adjusts the first exposure time to a third exposure time through the first CMOS image sensing unit, wherein the third exposure time is greater than the first exposure time.

[0141] In one possible design, when the high-energy particle detection device also includes an analog-to-digital conversion unit, the high-energy particle detection method may further include: the analog-to-digital conversion unit converting the first spot image from an analog signal to a digital signal.

[0142] S802: The communication unit sends a first spot image and a locally stored first correspondence to the data processing device. The first spot image and the first correspondence are used to generate the LET energy spectrum. The first correspondence is used to indicate the correspondence between at least one first spot and the LET value.

[0143] Optionally, when the high-energy particle detection device further includes a second CMOS image sensing unit, the high-energy particle detection method may also include S803 and S804. The sequence numbers of methods S801-S802 and methods S809-S804 do not limit the execution order.

[0144] S803: The high-energy particle detection method may further include: a second CMOS image sensing unit generating a second spot image based on high-energy particle radiation; the second spot image includes at least one second spot, and different sizes of spots in the at least one second spot correspond to different LET values.

[0145] Referring to the description in S401 or S801, before the high-energy particle detection device (including the second CMOS image sensing unit) enters the high-energy particle radiation environment to be detected (e.g., before the satellite is put into service in the space environment), a ground calibration test is performed on the second CMOS image sensing unit to obtain the correspondence between the size of the light spot and the LET value, i.e., the second correspondence; accordingly, the high-energy particle detection device stores the second correspondence locally.

[0146] In one possible design, the process by which the second CMOS image sensing unit generates the second spot image based on high-energy particle radiation specifically includes: the second CMOS image sensing unit generating the second spot image based on high-energy particle radiation within a fourth exposure time. Optionally, the processing unit may reduce the exposure time when the second spot image is overexposed; and / or, the processing unit may increase the exposure time when the second spot image is underexposed. The process of adjusting the exposure time of the second CMOS image sensing unit in the aforementioned design can refer to the process of adjusting the exposure time of the first CMOS image sensing unit by the processing unit in S401 or S801.

[0147] S804: The communication unit can also send a second spot image and a locally stored second correspondence to the data processing device. The second spot image and the second correspondence are used to generate the LET energy spectrum. The second correspondence is used to indicate the correspondence between at least one second spot and the LET value.

[0148] It should be understood that S803 and S804 are optional steps, which can be performed or not depending on the requirements of high-energy particle detection.

[0149] S805: The data processing device generates the LET energy spectrum. When S803 and S804 are not executed, the data processing device generates the LET energy spectrum based on the first spot image and the first correspondence. When S803 and S804 are executed, the data processing device generates the LET energy spectrum based on the first spot image, the first correspondence, the second spot image, and the second correspondence.

[0150] In one possible design, before executing the aforementioned high-energy particle detection method (S401 to S403, or S801 to S805) via the high-energy particle detection device, it is necessary to select a suitable CMOS image sensing unit in the COTS device and deploy it in the high-energy particle detection device. The selection process of the CMOS image sensing unit will be further explained below with reference to Figure 9.

[0151] Before performing the aforementioned high-energy particle detection method, steps 1 to 4 may also be performed.

[0152] Step 1: Energy spectrum simulation of service environment.

[0153] Based on the operational orbit of the satellite carrying the high-energy particle detection device, determine the predicted energy spectrum range of high-energy particles in the space environment below that satellite orbit (e.g., 0–80 meVg). -1 cm 2 Simulation software is used to simulate the space environment. In some examples, the predicted energy spectrum range can be determined using data returned by satellites currently operating in that space environment.

[0154] Step 2: Preliminary selection (CMOS image sensing unit).

[0155] The CMOS image sensing unit is selected from COTS devices based on the predicted energy spectrum range. For example, multiple COTS devices are placed in the simulation environment of step 1 to select the COTS device that meets the expected lifetime threshold. Combining the high-energy particle detection method shown in Figure 4 or Figure 8, the predicted lifetime of the first CMOS image sensing unit in the target operating environment is greater than or equal to the expected lifetime threshold. The expected lifetime threshold can be determined based on the satellite's service life. In this way, the initially selected CMOS image sensing unit will not be damaged by high-energy particles during its service life.

[0156] Step 3: Ground calibration test (secondary selection).

[0157] For each CMOS image sensor unit selected in step 2, a ground calibration experiment is performed. For example, a ground accelerator is used to simulate the radiation environment generated by high-energy particles of different energies within the predicted energy spectrum, and an irradiation experiment is conducted on the CMOS image sensor unit to be tested, thereby obtaining the different responses of the CMOS image sensor unit under high-energy particle radiation of different energies (spot images obtained by depositing energy).

[0158] Based on the aforementioned ground calibration test, the light spot corresponding to each CMOS image sensing unit was determined; CMOS image sensing units that are more sensitive to high-energy particle radiation of different energies can be selected for the next selection (meeting the requirements of secondary selection); conversely, CMOS image sensing units that are not sensitive to high-energy particle radiation of different energies are eliminated (not meeting the requirements of secondary selection).

[0159] Optionally, when the CMOS image sensing unit generates different spot characteristics based on high-energy particle radiation of different energies within any interval of the predicted energy spectrum range, the CMOS image sensing unit can be considered sensitive to high-energy particle radiation of different energies; otherwise, it is considered insensitive. Here, the first energy spectrum range is included within the predicted energy spectrum range of the working environment, and the spot characteristics include shape, size, brightness, and noise. Combined with the high-energy particle detection method shown in Figure 4 or Figure 8, the first CMOS image sensing unit is based on the first energy spectrum range (e.g., 0–40 meVg). -1 cm 2 The light spot characteristics generated by high-energy particle radiation within a certain range are different. The second CMOS image sensing unit is based on the second energy spectrum range (e.g., 40–80 meVg). -1 cm 2 The light spots generated by high-energy particle radiation of different energies within the same region have different characteristics.

[0160] Optionally, if the proportion of CMOS image sensing units that do not meet the requirements for secondary selection in the preliminary selection of CMOS image sensing units obtained in step 2 exceeds the threshold, then return to step 2 and re-execute the preliminary selection process (i.e., iteration).

[0161] In this way, the radiation response generated by the CMOS image sensing unit obtained by secondary selection within the required energy range can be better distinguished, avoiding insensitivity situations such as no response or too small response, which facilitates differentiation and statistics and improves the accuracy of high-energy particle detection.

[0162] Step 4: Calibrate and classify the test data.

[0163] For CMOS image sensing units that meet the secondary selection criteria, calibration test data are graded. In some examples, the calibration test data is graded based on the differences in the spot characteristics generated by high-energy particle radiation at different energies of the CMOS image sensing unit. In some examples, the CMOS image sensing unit can be coupled with a storage function and store the grading results locally. In other examples, the high-energy particle detection device configured with the CMOS image sensing unit stores the grading results locally. In still other examples, the satellite (or high-energy particle detection device) configured with the CMOS image sensing unit transmits the grading results to a ground-based data processing device.

[0164] For example, if the difference in light spot characteristics is reflected in the shape, then classification can be based on the light spot shape: LET value is 10 meVg -1 cm 2 The light spot shape corresponding to the high-energy particles is circular; the LET value is 20 meVg. -1 cm 2 The light spot shape corresponding to the high-energy particles is elliptical; the LET value is 30 meVg. -1 cm 2 The high-energy particles correspond to a rectangular light spot shape; the LET value is 40 meVg. -1 cm 2 The light spot shape corresponding to the high-energy particles is rhomboid.

[0165] For example, if the difference in light spot characteristics is reflected in size, then classification can be based on light spot size: referring to Figure 5, the LET value is 10 meVg. -1 cm 2 The spot size corresponding to the high-energy particles is L1; the LET value is 20 meVg. -1 cm 2 The spot size corresponding to the high-energy particles is L2; ​​the LET value is 30 meVg. -1 cm 2 The spot size corresponding to the high-energy particles is L3; the LET value is 40 meVg. -1 cm 2 The light spot size corresponding to the high-energy particles is L4.

[0166] For example, differences in light spot characteristics can be reflected by any one or a combination of shape, size, brightness, and noise, which will not be elaborated upon in this application. It should be understood that the grading criteria during the calibration test data grading process can be determined according to the required detection accuracy, and this application does not impose any limitations on them.

[0167] Before performing the aforementioned high-energy particle detection method, step 5 can also be performed.

[0168] Step 5: Space-borne exploration.

[0169] The CMOS image sensing unit selected in steps 1 to 4 above is mounted on a satellite to perform high-energy particle detection (execute S401 to S403, or S801 to S805), thereby generating at least one spot image.

[0170] The CMOS image sensing unit can operate as an independent module (refer to the high-energy particle detection device shown in Figure 3a) or share the peripheral devices of the satellite's payload platform (refer to the high-energy particle detection device shown in Figure 3b).

[0171] Optionally, when the high-energy particle detection method in step 5 is S401 to S403, the satellite has sufficient computing resources to generate an LET energy spectrum based on at least one of the aforementioned spot images.

[0172] Optionally, when the high-energy particle detection method in step 5 is S801 to S805, the satellite may not have sufficient computing resources, and the execution process of the high-energy particle detection method may also include step 6.

[0173] Step 6: Data output.

[0174] At least one spot image generated on the satellite is transmitted back to a data processing device on the ground so that the data processing device can generate an LET energy spectrum.

[0175] Figures 10 and 11 are schematic diagrams of possible communication devices provided in embodiments of this application. These communication devices can be used to implement the functions of the high-energy particle detection device or data processing device in the above-described method embodiments, and thus can also achieve the beneficial effects of the above-described method embodiments. In the embodiments of this application, the communication device can be a high-energy particle detection device or a data processing device, or it can be a module (such as a chip) applied to the high-energy particle detection device or data processing device. For example, the communication device can be used to implement the functions of the high-energy particle detection device or data processing device in the process shown in Figure 4 or Figure 8.

[0176] The communication device 1000 shown in Figure 10 includes a processing unit 1010 and a transceiver unit 1020. The transceiver unit 1020 may include a transmitting unit and / or a receiving unit for performing actions related to transmitting and / or receiving. The processing unit 1010 can be used to perform actions other than those related to transmitting and receiving. The communication device 1000 is used to implement the functions of the high-energy particle detection device or data processing device in the above method embodiments.

[0177] When the communication device 1000 is used to implement the function of the high-energy particle detection device in the method embodiment shown in FIG4, the processing unit 1010 can be used to generate a first spot image based on high-energy particle radiation; the processing unit 1010 is also used to generate a second spot image based on high-energy particle radiation; the processing unit 1010 is also used to generate an LET energy spectrum based on the first spot image; or to generate an LET energy spectrum based on the first spot image and the second spot image.

[0178] When the communication device 1000 is used to implement the function of the high-energy particle detection device in the method embodiment shown in FIG8, the processing unit 1010 can be used to generate a first spot image based on high-energy particle radiation; the transceiver unit 1020 can be used to send the first spot image and a locally stored first correspondence to the data processing device, the first correspondence indicating the correspondence between at least one first spot and a LET value. The processing unit 1010 can also be used to generate a second spot image based on high-energy particle radiation; the transceiver unit 1020 can also be used to send the second spot image and a locally stored second correspondence to the data processing unit, the second correspondence indicating the correspondence between at least one second spot and a LET value.

[0179] When the communication device 1000 is used to implement the function of the data processing device in the method embodiment shown in FIG8, the transceiver unit 1020 can be used to receive a first spot image and a first correspondence from the high-energy particle detection device, wherein the first correspondence is used to indicate the correspondence between at least one first spot and a LET value; the transceiver unit 1020 can also be used to receive a second spot image and a locally stored second correspondence from the high-energy particle detection device, wherein the second correspondence is used to indicate the correspondence between at least one second spot and a LET value; the processing unit 1010 can be used to generate an LET energy spectrum based on the first spot image and the first correspondence, or to generate an LET energy spectrum based on the first spot image, the first correspondence, the second spot image, and the second correspondence.

[0180] For a more detailed description of the processing unit 1010 and the transceiver unit 1020, please refer directly to the description of the relevant features in the above method embodiments, which will not be repeated here.

[0181] The communication device 1100 shown in Figure 11 includes at least one processor 1110 and interface circuitry 1120. The processor 1110 and interface circuitry 1120 are coupled to each other. It is understood that interface circuitry 1120 can be a transceiver or an input / output interface. Optionally, the communication device 1100 may further include at least one memory 1130 for storing instructions executed by the processor 1110, or storing input data required by the processor 1110 to execute instructions, or storing data generated after the processor 1110 executes instructions.

[0182] When the communication device 1100 is used to implement the above method embodiment, the processor 1110 is used to implement the function of the processing unit 1010, and the interface circuit 1120 is used to implement the function of the transceiver unit 1020.

[0183] It is understood that the processor in the embodiments of this application can be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), microprocessors without interlocked piped stages architecture (MIPS), advanced instruction set computers (RISC) machines (ARM), network processors (NPs), field-programmable gate arrays (FPGAs), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. A general-purpose processor can be a microprocessor or any conventional processor.

[0184] The method steps in the embodiments of this application can be implemented in hardware or by a processor executing software instructions. The software instructions can consist of corresponding software modules, which can be stored in random access memory, flash memory, read-only memory, programmable read-only memory, erasable programmable read-only memory, electrically erasable programmable read-only memory, registers, hard disks, portable hard disks, compact disc read-only memory (CD-ROM), or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor, enabling the processor to read information from and write information to the storage medium. Of course, the storage medium can also be a component of the processor. The processor and storage medium can reside in an ASIC. Additionally, the ASIC can reside in a terminal device or network device. Alternatively, the processor and storage medium can exist as discrete components in an access network device or terminal.

[0185] In the above embodiments, implementation can be achieved entirely or partially through software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented entirely or partially in the form of a computer program product. The computer program product includes one or more computer programs or instructions. A computer program is a set of instructions that directs each step of an action of an electronic computer or other device with message processing capabilities. It is typically written in a programming language and runs on a target architecture. When the computer program or instructions are loaded and executed on a computer, the processes or functions described in the embodiments of this application are performed, in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer program or instructions can be stored in a computer-readable storage medium or transferred from one computer-readable storage medium to another. For example, the computer program or instructions can be transferred from one website, computer, server, or data center to another website, computer, server, or data center via wired or wireless means. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that integrates one or more available media. The available medium can be a magnetic medium, such as a floppy disk, hard disk, or magnetic tape; it can also be an optical medium, such as a digital video optical disc; or it can be a semiconductor medium, such as a solid-state drive. The computer-readable storage medium can be volatile or non-volatile, or it can include both types of storage media.

[0186] Based on the same technical concept, embodiments of this application also provide a computer-readable storage medium, including a program or instructions, which, when run on a computer, cause the methods in the above method embodiments to be executed.

[0187] Based on the same technical concept, embodiments of this application also provide a computer program product, including instructions that, when run on a computer, cause the methods in the above method embodiments to be executed.

[0188] Based on the same technical concept, embodiments of this application also provide a communication system, which may include a high-energy particle detection device and a data processing device. In this communication system, the high-energy particle detection device is used to implement the method flow in FIG4, or the high-energy particle detection device and the data processing device are used to implement the method flow in FIG8.

[0189] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0190] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to this application. It should be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in one or more blocks of the flowchart illustrations and / or one or more blocks of the block diagrams.

[0191] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means that implement the functions specified in one or more flowcharts and / or one or more block diagrams.

[0192] These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process, such that the instructions, which execute on the computer or other programmable apparatus, provide steps for implementing the functions specified in one or more flowcharts and / or one or more block diagrams.

[0193] In the various embodiments of this application, unless otherwise specified or in case of logical conflict, the terminology and / or descriptions of different embodiments are consistent and can be referenced by each other. The technical features of different embodiments can be combined to form new embodiments according to their inherent logical relationship.

[0194] It is understood that the various numerical designations used in the embodiments of this application are merely for descriptive convenience and are not intended to limit the scope of the embodiments of this application. The order of the process numbers described above does not imply the order of execution; the execution order of each process should be determined by its function and internal logic.

Claims

1. A high-energy particle detecting device, characterized by comprising: The device includes a first complementary metal-oxide-semiconductor CMOS image sensing unit and a processing unit. The first CMOS image sensing unit is used to generate a first spot image based on high-energy particle radiation; the first spot image includes at least one first spot, and different sizes of the at least one first spot correspond to different linear energy deposition (LET) values. The processing unit is used to generate an LET energy spectrum based on the first light spot image.

2. The apparatus of claim 1, wherein, The first CMOS image sensing unit is specifically used for: The first spot image is generated based on high-energy particle radiation within the first exposure time. The processing unit is also used for: When the proportion of at least one first spot in the first spot image is greater than a first threshold, and / or the overlap index of the spots in the first spot image is greater than a second threshold, the first exposure time is adjusted to a second exposure time by the first CMOS image sensing unit, and the second exposure time is less than the first exposure time. And / or, When the proportion of at least one first light spot in the first light spot image is less than or equal to a third threshold, the first exposure time is adjusted to a third exposure time by the first CMOS image sensing unit, wherein the third exposure time is greater than the first exposure time.

3. The apparatus of claim 1 or 2, wherein, The processing unit is specifically used for: The LET energy spectrum is generated based on the first spot image and the first correspondence stored locally; the first correspondence is used to indicate the correspondence between the at least one first spot and the LET value.

4. The apparatus of any one of claims 1-3, wherein, The device also includes a second CMOS image sensing unit; The second CMOS image sensing unit is used to generate a second spot image based on high-energy particle radiation; the second spot image includes at least one second spot, and different sizes of the at least one second spot correspond to different LET values; the range of LET values ​​detected by the second CMOS image sensing unit and the first image sensing unit are different; The processing unit is specifically used for: The LET energy spectrum is generated based on the first spot image and the second spot image.

5. The apparatus of claim 4, wherein, The processing unit is specifically used for: The LET energy spectrum is generated based on the first spot image, the second spot image, the first correspondence stored locally, and the second correspondence stored locally. Wherein, the first correspondence is used to indicate the correspondence between the at least one first light spot and the LET value, and the second correspondence is used to indicate the correspondence between the at least one second light spot and the LET value.

6. The apparatus of any one of claims 1-5, wherein, The device also includes an analog-to-digital conversion unit; The analog-to-digital conversion unit is used to convert the first light spot image from an analog signal to a digital signal.

7. The apparatus of any one of claims 1-6, wherein, The processing unit is a processing unit in the baseband module of the satellite; and / or; the processing unit shown is a processing unit in the intermediate frequency module of the satellite.

8. A method of detecting high-energy particles, characterized by, The method includes: A first spot image is generated based on high-energy particle radiation; the first spot image includes at least one first spot, and different sizes of the first spot correspond to different linear energy deposition (LET) values; The LET energy spectrum is generated based on the first light spot image.

9. The method of claim 8, wherein, The generation of the first light spot image based on high-energy particle radiation includes: The first spot image is generated based on high-energy particle radiation within the first exposure time. The method further includes: If the proportion of at least one first spot in the first spot image is greater than a first threshold, and / or the spot index in the first spot image is greater than a second threshold, the first exposure time is adjusted to a second exposure time, wherein the second exposure time is less than the first exposure time. And / or, If the proportion of at least one first light spot in the first light spot image is less than or equal to a third threshold, the first exposure time is adjusted to a third exposure time, wherein the third exposure time is greater than the first exposure time.

10. The method of claim 8 or 9, wherein, The step of generating the LET energy spectrum based on the first light spot image includes: The LET energy spectrum is generated based on the first spot image and the first correspondence stored locally; the first correspondence is used to indicate the correspondence between the at least one first spot and the LET value.

11. The method of any one of claims 8-10, wherein, The method further includes: A second light spot image is generated based on high-energy particle radiation; the second light spot image includes at least one second light spot, and different sizes of light spots in the at least one second light spot correspond to different LET values; the range of LET values ​​corresponding to the at least one first light spot and the at least one second light spot are different; The step of generating the LET energy spectrum based on the first light spot image includes: The LET energy spectrum is generated based on the first spot image and the second spot image.

12. The method of claim 11, wherein, The step of generating the LET energy spectrum based on the first spot image and the second spot image includes: The LET energy spectrum is generated based on the first spot image, the second spot image, the first correspondence stored locally, and the second correspondence stored locally. Wherein, the first correspondence is used to indicate the correspondence between the at least one first light spot and the LET value, and the second correspondence is used to indicate the correspondence between the at least one second light spot and the LET value.

13. The method of any one of claims 8-12, wherein, The method further includes: The first light spot image is converted from an analog signal to a digital signal.

14. A high-energy particle detection device, characterized by, The device includes a first complementary metal-oxide-semiconductor CMOS image sensing unit and a communication unit. The first CMOS image sensing unit is used to generate a first spot image based on high-energy particle radiation; the first spot image includes at least one first spot, and different sizes of the at least one first spot correspond to different linear energy deposition (LET) values. The communication unit is configured to send the first spot image and a locally stored first correspondence to the data processing device, wherein the first spot image and the first correspondence are used to generate an LET energy spectrum; the first correspondence is used to indicate the correspondence between the at least one first spot and the LET value.

15. The apparatus of claim 14, wherein, The first CMOS image sensing unit is specifically used for: The first spot image is generated based on high-energy particle radiation within the first exposure time. The device further includes a processing unit; the processing unit is used for: When the proportion of at least one first spot in the first spot image is greater than a first threshold, and / or the spot index in the first spot image is greater than a second threshold, the first exposure time is adjusted to a second exposure time by the first CMOS image sensing unit, and the second exposure time is less than the first exposure time. And / or, When the proportion of at least one first light spot in the first light spot image is less than or equal to a third threshold, the first exposure time is adjusted to a third exposure time by the first CMOS image sensing unit, wherein the third exposure time is greater than the first exposure time.

16. The apparatus of claim 14 or 15, wherein, The device also includes a second CMOS image sensing unit; The second CMOS image sensing unit is used to generate a second spot image based on high-energy particle radiation; the second spot image includes at least one second spot, and different sizes of the at least one second spot correspond to different LET values; The communication unit is further configured to send the second spot image and a locally stored second correspondence to the data processing device, the second spot image and the second correspondence being used to generate the LET energy spectrum; the second correspondence being used to indicate the correspondence between the at least one second spot and the LET value.

17. The apparatus of any one of claims 14-16, wherein, The device also includes an analog-to-digital conversion unit; The analog-to-digital conversion unit is used to convert the first light spot image from an analog signal to a digital signal.

18. A method for detecting high-energy particles, characterized in that, The method includes: A first spot image is generated based on high-energy particle radiation; the first spot image includes at least one first spot, and different sizes of the first spot correspond to different linear energy deposition (LET) values; The first spot image and the first correspondence stored locally are sent to the data processing device. The first spot image and the first correspondence are used to generate the LET energy spectrum. The first correspondence is used to indicate the correspondence between the at least one first spot and the LET value.

19. The method of claim 18, wherein, The generation of the first light spot image based on high-energy particle radiation includes: The first spot image is generated based on high-energy particle radiation within the first exposure time. The method further includes: If the proportion of at least one first spot in the first spot image is greater than a first threshold, and / or the spot index in the first spot image is greater than a second threshold, the first exposure time is adjusted to a second exposure time, wherein the second exposure time is less than the first exposure time. And / or, If the proportion of at least one first light spot in the first light spot image is less than or equal to a third threshold, the first exposure time is adjusted to a third exposure time, wherein the third exposure time is greater than the first exposure time.

20. The method of claim 18 or 19, wherein, The method further includes: A second light spot image is generated based on high-energy particle radiation; the second light spot image includes at least one second light spot, and different sizes of light spots in the at least one second light spot correspond to different LET values; The second spot image and the locally stored second correspondence are sent to the data processing device. The second spot image and the second correspondence are used to generate the LET energy spectrum. The second correspondence is used to indicate the correspondence between the at least one second spot and the LET value.

21. The method of any one of claims 18-20, wherein, The method further includes: The first light spot image is converted from an analog signal to a digital signal.

22. A communications device, characterized by It includes at least one processor, the processor being configured to execute a computer program or instructions to implement the method as described in any one of claims 8-13, or to implement the method as described in any one of claims 18-21.

23. A computer-readable storage medium, characterized in that, The storage medium stores a computer program or instructions, which, when executed by a communication device, implement the method as described in any one of claims 8-13, or the method as described in any one of claims 18-21.

24. A computer program product, characterised in that, When the computer program product is executed by a computer, it causes the computer to perform the method as described in any one of claims 8-13, or to perform the method as described in any one of claims 18-21.

25. A chip system, characterized by Including logic circuits; The logic circuit is configured to execute a computer-executable program, such that a device having the chip system mounted thereon is configured to perform the method as described in any one of claims 8-13, or to perform the method as described in any one of claims 18-21.

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