New semiconductor material and production method

Abstract

The invention is related to a new semiconductor material and production method obtained using a plastic insulator material consisting of polymer and natural plants.

Description

[0001] NEW SEMICONDUCTOR MATERIAL AND PRODUCTION METHOD TECHNICAL FIELD

[0002] The invention is related to a new semiconductor material and production method obtained using a plastic insulator material consisting of polymer and natural plants and carbon material.

[0003] PRIOR ART

[0004] Organic materials are divided into three groups as organic insulators, organic semiconductors and organic conductors. Organic insulator materials are classified as small molecule and large molecule materials. Plastic materials are known as insulators. They do not conduct electric current. Those that conduct electric current are defined as organic semiconductors and organic conductors. Organic semiconductor materials are unstable and deteriorate at room temperature. These materials are produced by long chemical synthesis methods. Those with conjugated structures and aromatic groups exhibit semiconductor behavior electrically. Their synthesis is difficult, their long-step production is costly and their production efficiency is low. In addition, organic semiconductor materials show low performance in electronic device production. Due to these properties, they are insufficient for electronic device production. Therefore, most organic semiconductor materials are not sufficient for electronic device production. Naturally, new materials and production methods that are easy to synthesize and have high production efficiency are needed.

[0005] BRIEF DESCRIPTION OF THE INVENTION

[0006] The invention relates to a new semiconductor material and production method obtained using a plastic insulator material consisting of polymers and natural plants.

[0007] The functional semiconductor material is comprising of polymer material, carbon based material and natural plants. The polymer materials are insulator materials as they do not conduct electric current. The polymers are large molecular materials consisting of long and short chains. Organic semiconductor material is a material used in electronic technology. Electrical properties of functional semiconductor material are controlled by natural plants. Therefore, with our invention, polymer materials that are stable at room temperature and do not have structural degradation are converted into organic semiconductor materials by changing their structural properties with the help of natural plants.

[0008] Forbidden energy band gap of the functional semiconductor material is controlled with the amount of natural plants. Functional groups found in natural plants are incorporated into the structure of polymers and in turn, the polymer exhibits the semiconductor property, pi (IT) electrons are incorporated into insulating polymer with organic plants. When pi electrons enter the structure of polymers, the polymer material exhibits semiconductor behavior. The pi electrons in the structure of polymers create a low band gap.

[0009] DETAILED DESCRIPTION OF THE INVENTION

[0010] In our invention, basically; the insulating polymer is converted to a semiconductor material using plastic insulating material and organic plants. The monomer, polymer initiator, organic plant , dyes and carbon based material are prepared separately with water at concentrations of 1:1, 1:2, 1:3, 1:4 and 1:5. The prepared material is mixed mechanically and ultrasonically. The resulting mixture is placed in a high-pressure reactor and subjected to hydrothermal treatment.

[0011] In our invention, polymers are selected from large-molecule or small-molecule compounds. These polymers are known as plastic materials. The polymers are transparent thermoplastic materials. These polymers do not have a crystal structure. In our invention, at least one of poly(methylcrylate), methacrylate monomer, methyl acrylate dimethylaminoethyl methacrylate, butylmethylcrylate, methacrylate triethylene, polystyrene, styrene monomer, polyvinylalcohol, vinylacetate monomer, glycol dimethacrylate, polyurethane dimethacrylate and urethane dimethacrylate is used as plastic insulating polymer.

[0012] In present disclosure, organic plant, dye, carbon material are added to polymers at various concentrations of 1 : 1 , 1:2, 1:3, 1:4 and 1 :5. As organic plant; at least one of black tea plant and green tea plant is used. In present disclosure, dyes are selected groups of Sudan III dye

[0013] Organic plants have conjugated structure and functional groups. The conjugated structures are structures consisting of single and double bonds. In conjugated structures, electrons move by jumping from double bond to single bond along the chain of the polymer. In other words, pi electrons move by jumping along the chain. In present invention, at least one of the carbon materials based on graphene, myxene (mxene), and carbon nanotubes is also used.

[0014] The electrical conductivity and forbidden energy band gap of the functional organic semiconductor material is changed with the amount of organic plant. The forbidden energy band gap of the semiconductor material is controlled with the concentration of organic plant and carbon material. While obtaining the semiconductor material, the organic plant added to the polymer causes more pi (IT) electrons to be present in the structure of the polymer. The higher numbers of pi (IT) electrons changes the forbidden energy band of the polymer. The organic plant changes the optical properties of the semiconductor material.

[0015] In present invention, the organic plant is first placed in the high-pressure reactor together with the monomer. This monomer and organic plant are prepared in concentrations of 1 : 1 , 1:2, 1:3, 1:4 and 1 :5. The prepared monomer and organic plant leaves are mixed mechanically and ultrasonically. At least one of the graphene, mxene, carbon nanotube-based carbon materials is added to this mixture in the ratios of 1:1, 1:2, 1:3, 1:4 and 1:5. Thus; carbon material, monomer solution and organic plant leaves are mixed and this mixture is sonicated with an ultrasonic sonicator for at least 5 minutes. The obtained solution including the monomer, carbon material and organic plant solution mixture is placed in the high-pressure reactor. The reaction temperature, the heating rate and reaction time are entered into the system and the heat treatment is automatically performed by system. The reaction temperature is at least 80 ° C and the reaction time is at least 10 hours. During the reaction, the monomer turns into polymer together with the organic plant. During the formation, the pi electrons in the organic plant and carbon material pass to the polymer material. The organic plant, which is a source of pi electrons, has a high number of pi electrons. When pi electrons interact with the polymer, a large number of pi electrons pass into the polymer structure. The pi electrons passing into the polymer structure change the forbidden energy band gap of the polymer. The forbidden energy band gap of the polymer is changed depending on the concentration of pi electrons added to the polymer. Pi electrons move by jumping along the polymer chain in the polymeric structure. Insulating polymers do not conduct electricity. Because there are no electrons in the structure to carry the electric current. They are converted into semiconducting polymers by injecting pi electrons to obtain functional semiconductor material. The conversion rate depends on the reaction temperature, reaction time and production conditions. Depending on the reaction temperature and time, the semiconductor properties of present material is changed.

[0016] The presence of new groups in the FTIR spectrum of present invention shows that it has transformed into a semiconductor material. The new bands formed in the FTIR spectrum are N-H, O-H and C-C bands.

[0017] The shift and change in intensity in the bands of the FTIR spectrum of the functional semiconductor material show that the formation of a complex of organic plant and insulating polymer are formed.

Claims

CLAIMS1. It is a new semiconductor material characterized by insulating polymer, carbon material and organic plant.

2. It is the semiconductor material mentioned in claim 1, characterized by containing at least one of poly(methylcrylate), methacrylate monomer, methyl acrylate dimethylaminoethyl methacrylate, butylmethylcrylate, methacrylate triethylene, polystyrene, styrene monomer, polyvinylalcohol, vinylacetate monomer, glycol dimethacrylate, polyurethane dimethacrylate, urethane dimethacrylate insulating polymers, at least one of graphene, myxene, carbon nanotube based carbon materials and at least one of black tea plant, green tea plant, organic plant.

3. It is the semiconductor material mentioned in claim 1 , characterized by being a material whose electrical conductivity and forbidden energy range change with the amount of organic plant.

4. It is the semiconductor material mentioned in claim 1 , characterized by being a material whose forbidden energy gap decreases with the concentration of organic plant and carbon material.

5. It is the semiconductor material mentioned in claim 1 , characterized by being a material reduces forbidden energy gap of the polymer of the high pi electron number.

6. It is a method of converting plastic material into semiconductor material characterized by the following steps;- preparation of organic plant leaves,- preparation of monomer solution,- preparation of carbon material,- mixing of carbon material, monomer solution and organic plant leaves, - sonicating the mixture with an ultrasonic sonicator for at least 5 minutes, - placing the monomer, carbon material and organic plant solution mixture into a high pressure reactor,- keeping it in reaction at a reaction temperature of at least 80 °C and for at least 10 hours,- conversion of monomer to polymer during the reaction, transfer of pi electrons in organic plant and carbon material to polymer material, - changing the forbidden energy range of polymer of pi electrons passing through the structure of polymer- injection of pi electrons into insulating polymers.