PCB-embedded power module and inverter

Abstract

The present invention relates to a PCB-embedded power module and an inverter comprising this power module. This power module comprises a PCB and at least one first switch element (11) and at least one second switch element (12) that are embedded in the PCB. The switches each comprise a conductive substrate (111, 121) arranged on a first intermediate layer (L3) and a second intermediate layer (L4) of the PCB, and a semiconductor chip (112, 122) mounted on the corresponding conductive substrate. A conductive input part of the first switch element is at least partially arranged on a third intermediate layer (L5) of the PCB, which is located on the opposite side of the second intermediate layer to the first intermediate layer. A conductive input part of the second switch element is at least partially arranged on a fourth intermediate layer (L2) of the PCB, which is located on the opposite side of the first intermediate layer to the second intermediate layer. By using a three-dimensional circuit design, circuit inductance is maximally reduced.

Description

[0001] 202401552

[0002] 1

[0003] PCB-embedded power module and inverter

[0004] Technical Field

[0005] The present invention relates to the technical field of power modules, and in particular relates to a PCB-embedded power module and an inverter comprising this power module.

[0006] Background Art

[0007] Half-bridge power modules comprise two switches composed of semiconductor devices, respectively called a “high-side switch” and a “low-side switch”; these two switches and a capacitor form a half-bridge power circuit. A DC input voltage is applied across both sides of a half bridge, and power is output between the switches. In an inverter application, the half-bridge power module causes a certain circuit inductance due to an area surrounded by the circuit and the capacitor; generally the lower this inductance, the better the performance.

[0008] In half-bridge power modules in the prior art, each switch is formed by multiple power semiconductor chips connected in parallel, and most internal layouts of the modules are planar arrangements of connecting lines of power circuits; that is, almost all the connecting lines are arranged on the same side of the semiconductor chips. Since the area enclosed by a power circuit of a planar layout is larger, and the wiring itself is narrower, a significant problem arises of circuit inductance being greater than 8 nH (not including capacitors), and it is not possible to fully exploit the advantages of the high switching speeds of wide-bandgap semiconductors, such as silicon carbide and gallium nitride.

[0009] Summary of the Invention

[0010] An object of the present invention lies in solving the at least one problem mentioned above and / or other problems present in the prior art.

[0011] To achieve this object, one aspect according to the present invention provides a PCB-embedded power module, which comprises a PCB and at least one first switch 202401552

[0012] 2 element and at least one second switch element that are embedded in the PCB. The first switch element is fitted with a first output conductive part and a first input conductive part. The second switch element is fitted with a second input conductive part and a second output conductive part. The first switch element comprises a first conductive substrate and a first semiconductor chip that is mounted on the first conductive substrate. The second switch element comprises a second conductive substrate and a second semiconductor chip that is mounted on the second conductive substrate. The first conductive substrate and the second conductive substrate are both arranged on a first intermediate layer and a second intermediate layer of the PCB. The first semiconductor chip and the second semiconductor chip are both arranged on a portion of the first intermediate layer that faces away from the second intermediate layer. The first input conductive part is at least partially arranged on a third intermediate layer of the PCB and is electrically connected to the first conductive substrate, and the third intermediate layer is located on a side of the second intermediate layer that is opposite to the first intermediate layer. The second input conductive part is at least partially arranged on a fourth intermediate layer of the PCB and is electrically connected to the second semiconductor chip, and the fourth intermediate layer is located on a side of the first intermediate layer that is opposite to the second intermediate layer.

[0013] According to an embodiment of the present invention, the first output conductive part is at least partially arranged on the fourth intermediate layer of the PCB, and the first output conductive part comprises a first copper layer and first buried copper, the first copper layer extending in the fourth intermediate layer in a direction parallel to the first semiconductor chip, and the first buried copper electrically connecting the first copper layer to the first semiconductor chip. The second input conductive part comprises a second copper layer and second buried copper, the second copper layer extending in the fourth intermediate layer in a direction parallel to the second semiconductor chip, and the second buried copper electrically connecting the second copper layer to the second semiconductor chip. The first input conductive part comprises a third copper layer and third buried copper, the third copper layer extending in the third intermediate layer in a direction parallel to the first semiconductor chip, and the third buried copper electrically connecting the third 202401552

[0014] 3 copper layer to the first conductive substrate. The second output conductive part is at least partially arranged on the third intermediate layer of the PCB, the second output conductive part comprising a fourth copper layer and fourth buried copper, the fourth copper layer extending in the third intermediate layer in a direction parallel to the second semiconductor chip, and the fourth buried copper electrically connecting the fourth copper layer to the second conductive substrate.

[0015] According to an embodiment of the present invention, the numbers of the first switch element and the second switch element are both more than one, the first copper layer and the third copper layer respectively at least partially covering a region of each first switch element, and the second copper layer and the fourth copper layer respectively at least partially covering a region of each second switch element.

[0016] According to an embodiment of the present invention, the PCB-embedded power module further comprises a first copper insert that is arranged in the first intermediate layer and the second intermediate layer and is located between the first switch element and the second switch element, the first copper layer being further connected to the first copper insert via fifth buried copper that is at least partially arranged in the fourth intermediate layer, and the fourth copper layer being further connected to the first copper insert via sixth buried copper that is at least partially arranged in the third intermediate layer.

[0017] According to an embodiment of the present invention, the PCB-embedded power module further comprises a second copper insert that is arranged in the first intermediate layer and the second intermediate layer, the third copper layer being further connected to the second copper insert via seventh buried copper that is at least partially arranged in the third intermediate layer.

[0018] According to an embodiment of the present invention, the second copper insert is connected to a capacitor via a first conductive structure that is at least partially arranged in the fourth intermediate layer.

[0019] According to an embodiment of the present invention, the PCB-embedded power module further comprises a third copper insert that is arranged in the first 202401552

[0020] 4 intermediate layer and the second intermediate layer, the second copper layer being further connected to the third copper insert via eighth buried copper that is at least partially arranged in the fourth intermediate layer, and being further connected to the capacitor via a second conductive structure.

[0021] According to an embodiment of the present invention, the first conductive structure comprises a first copper-clad portion that is arranged in a top layer of the PCB, a second copper-clad portion that is arranged in the fourth intermediate layer, at least one first buried copper portion that is connected between the first copper-clad portion and the second copper-clad portion, and at least one second buried copper portion that is connected between the second copper-clad portion and the second copper insert.

[0022] According to an embodiment of the present invention, the second conductive structure comprises a third copper-clad portion that is arranged in a top layer of the PCB, and at least one third buried copper portion that is connected between the third copper-clad portion and the second copper layer.

[0023] According to an embodiment of the present invention, the first conductive structure comprises a first window and a first busbar, the first window penetrating the fourth intermediate layer in a region that corresponds to the second copper insert and extending to an outer side of the PCB, and the first busbar passing through the first window and being connected to the second copper insert.

[0024] According to an embodiment of the present invention, the second conductive structure comprises a second window and a second busbar, the second window penetrating the fourth intermediate layer in a region that corresponds to the third copper insert and extending to an outer side of the PCB, and the second busbar passing through the second window and being connected to the third copper insert.

[0025] According to an embodiment of the present invention, the first conductive substrate and the second conductive substrate are both copper blocks. 202401552

[0026] 5

[0027] According to another aspect of the present invention, an inverter is provided, the inverter comprising the PCB-embedded power module described above.

[0028] In the PCB-embedded power module of the present invention, the first switch element and the second switch element are both arranged in intermediate layers of a PCB, and the first input conductive part of the first switch element and the second input conductive part of the second switch element are respectively arranged at two opposite sides of the intermediate layers. By means of such a three-dimensional circuit design, the area enclosed by the circuit can be minimized, and the width of the wiring is enlarged, thereby maximally reducing circuit inductance.

[0029] Brief Description of the Drawings

[0030] The features and advantages of the present invention will be clearly understood by means of the following detailed description provided with reference to the drawings. It should be understood that the drawings listed below are merely schematic and not drawn to scale, so should not be regarded as limiting the present application, wherein:

[0031] Fig. 1 shows a circuit schematic diagram of a half-bridge power module.

[0032] Fig. 2 shows a partial schematic drawing of a PCB-embedded power module according to an embodiment of the present invention.

[0033] Fig. 3 shows a sectional schematic drawing of the PCB-embedded power module shown in Fig. 2.

[0034] Fig. 4 shows a sectional schematic drawing of a PCB-embedded power module according to another embodiment of the present invention.

[0035] Key to the Drawings:

[0036] 11 , first switch element; 111 , first conductive substrate; 112, first semiconductor chip; 12, second switch element; 121 , second conductive substrate; 122, second semiconductor chip; 13, capacitor; 21 , first output conductive part; 211 , first copper layer; 212, first buried copper; 22, second input conductive part; 221 , second copper layer; 222, second buried copper; 31 , first input conductive part; 311 , third copper layer; 312, third buried copper; 32, second output conductive part; 321 , fourth copper layer; 322, fourth buried copper; 41 , first copper insert; 42, second copper 202401552

[0037] 6 insert; 43, third copper insert; 51 , fifth buried copper; 52, sixth buried copper; 53, seventh buried copper; 54, eighth buried copper; 55, ninth buried copper; 56, fifth copper layer; 6, first conductive structure; 61 , first copper-clad portion; 62, first buried copper portion; 63, second buried copper portion; 64, second copper-clad portion; 65, first window; 66, first busbar; 7, second conductive structure; 71 , third copper-clad portion; 72, third buried copper portion; 73, second window; 74, second busbar; 8, insulating sheet.

[0038] Detailed Description of the Invention

[0039] Embodiments of the present invention are described below with reference to the drawings. Many specific details are expounded in the following description so that those skilled in the art can understand and realize the present invention more comprehensively. However, it is obvious to those skilled in the art that the invention can be realized without some of these specific details. In addition, it should be understood that the present invention is not limited to the specific embodiments described. On the contrary, consideration may be given to the use of any combination of the following various features and key elements to implement the present invention, regardless of whether they relate to different embodiments. Therefore, the following aspects, features, embodiments and advantages merely serve an explanatory purpose, and should not be regarded as key elements or definitions of the claims, unless explicitly stated in the claims.

[0040] Hereinafter, terms such as “first” and “second” are used to describe elements of the present application; these terms are only used for distinguishing various elements, rather than for imposing a restriction on the nature, order or number of these elements. The terms “comprise” and “have” are used to broadly include the meaning of being within, and mean that other elements / constituents may further be present in addition to the elements / constituents listed.

[0041] Fig. 1 schematically shows a half-bridge topology of a power module according to an embodiment of the present invention. As shown in Fig. 1 , the half-bridge power module comprises two switches T1 and T2 composed of semiconductor devices, respectively called a “high-side switch” and a “low-side switch”. The two switches 202401552

[0042] 7 are generally encapsulated together and form a half-bridge power circuit with a capacitor Cdc that is outside the encapsulation. A DC input voltage can be applied across both sides of a half bridge, wherein a positive terminal and a negative terminal thereof are respectively represented by “HV+” and “HV-”. Power is output between the two switches and is represented by “U”. Such a half-bridge power module is a basic component of many power converters. For example, two half bridges connected in parallel may form a full bridge, and three half bridges connected in parallel may form a three-phase topology.

[0043] Figs. 2 and 3 show a PCB-embedded power module according to an embodiment of the present invention. Fig. 2 schematically shows distribution positions of a first switch element and a second switch element of this power module in PCB intermediate layers. Fig. 3 shows a sectional schematic drawing of a PCB that is embedded with this power module.

[0044] This power module may comprise multiple first switch elements 11 and second switch elements 12 that are embedded in the PCB. Although Fig. 2 shows that the numbers of the first switch element 11 and the second switch element 12 are six, the present invention is not limited to this; the numbers of the first switch element 11 and the second switch element 12 may also be one, two, three or any other number. The first switch element 11 may be constructed as a high-side switch of a half-bridge power module, and the second switch element 12 may be constructed as a low-side switch of a half-bridge power module. This power module further may comprise a capacitor 13; this capacitor may not only be mounted on this PCB, but also may be mounted on an external part of this PCB.

[0045] In the present embodiment, the PCB is a six-layer board that comprises layers L1 to L6; the layers are stacked and then formed into an integral whole via lamination. The first switch element 11 and the second switch element 12 are both arranged in the intermediate layers L3 and L4, and an input conductive part and an output conductive part fitted for these switches are respectively arranged in layer L2 and layer L5. It must be explained that, in this case, the input and the output are only with respect to the direction of current flowing into and out of the first switch element and the second switch element in the present embodiment; in other embodiments, the 202401552

[0046] 8 input conductive part and the output conductive part may be exchanged with each other.

[0047] More specifically, referring to Fig. 3, the first switch element 11 may comprise a first conductive substrate 111 and a first semiconductor chip 112 that is mounted on the first conductive substrate 111. The second switch element 12 may comprise a second conductive substrate 121 and a second semiconductor chip 122 that is mounted on the second conductive substrate 121 . The first semiconductor chip 112 and the second semiconductor chip 122 are both arranged on a portion of the side of layer L3 that faces away from layer L4. For example, a conductive substrate that spans both layers L3 and L4 may have a recess on the layer L3 side, and a corresponding semiconductor chip may be arranged in this recess.

[0048] As an example, a drain at the bottom of the first semiconductor chip 112 may be connected to a first input conductive part 31 via a first conductive substrate 111 , and a source at the top of the first semiconductor chip 112 may be connected to a first output conductive part 21 . A source at the top of the second semiconductor chip 122 may be connected to a second output conductive part 22, and a drain at the bottom of the second semiconductor chip 122 may be connected to a second input conductive part 32 via a second conductive substrate 121 .

[0049] The first output conductive part 21 that is arranged in layer L2 may comprise a first copper layer 211 and a plurality of pieces of first buried copper 212. The first copper layer 211 extends in a direction parallel to the first semiconductor chip 112 and at least partially covers a region in which each first switch element 11 is located. The first copper layer 211 is formed on an outer surface of layer L2 (that is, a surface of the side facing away from L3 after lamination) by copper cladding or another means. The first buried copper 212 is divided into a number of groups corresponding to the number of the first switch elements 11 ; each group of first buried copper 212 corresponds to one first switch element 11 , and is formed between the first copper layer 211 and the first semiconductor chip 112, by drilling a hole in layer L2 and filling the hole with copper foil, to electrically connect the two. 202401552

[0050] 9

[0051] The second input conductive part 22 that is likewise arranged in layer L2 may also comprise a second copper layer 221 and a plurality of pieces of second buried copper 222. The second copper layer 221 extends in a direction parallel to the second semiconductor chip 122 and at least partially covers a region in which each second switch element 12 is located. The second copper layer 221 is formed on an outer surface of layer L2 by copper cladding or another means. The second buried copper 222 is divided into a number of groups corresponding to the number of the second switch elements 12; each group of second buried copper 222 corresponds to one second switch element 12, and is formed between the second copper layer 221 and the second semiconductor chip 122, by drilling a hole in layer L2 and filling the hole with copper foil, to electrically connect the two.

[0052] The first input conductive part 31 that is arranged in layer L5 may comprise a third copper layer 311 and a plurality of pieces of third buried copper 312. The third copper layer 311 extends in a direction parallel to the first semiconductor chip 112 and at least partially covers a region in which each first switch element 11 is located. The third copper layer 311 is formed on an outer surface of layer L5 (that is, a surface of the side facing away from L4 after lamination) by copper cladding or another means. The third buried copper 312 is divided into a number of groups corresponding to the number of the first switch elements 11 ; each group of third buried copper 312 corresponds to one first switch element 11 , and is formed between the third copper layer 311 and the first conductive substrate 111 , by drilling a hole in layer L5 and filling the hole with copper foil, to electrically connect the two.

[0053] The second output conductive part 32 that is likewise arranged in layer L5 may comprise a fourth copper layer 321 and a plurality of pieces of fourth buried copper 322. The fourth copper layer 321 extends in a direction parallel to the second semiconductor chip 122 and at least partially covers a region in which each second switch element 12 is located. The fourth copper layer 321 is formed on an outer surface of layer L5 by copper cladding or another means. The fourth buried copper 322 is divided into a number of groups corresponding to the number of the second switch elements 12; each group of fourth buried copper 322 corresponds to one first second element 12, and is formed between the fourth copper layer 321 and the 202401552

[0054] 10 second conductive substrate 121 , by drilling a hole in layer L5 and filling the hole with copper foil, to electrically connect the two.

[0055] In the above embodiment, the first output conductive part 21 of the first switch element 11 is electrically connected to the second output conductive part 32 of the second switch element 12, and is connected to an output end of the power module (U in Fig. 1 ). More specifically, as shown in Figs. 2 and 3, the PCB is provided with a first copper insert 41 at a position between multiple first switch elements 11 and multiple second switch elements 12. The first copper insert 41 is arranged in layers L3 and L4. The first copper layer 211 extends from a region in which the multiple first switch elements 11 are located to a region in which the first copper insert 41 is located, and is connected to the first copper insert 41 via the fifth buried copper 51 arranged in layer L2. The fourth copper layer 321 extends from a region in which the multiple second switch elements 12 are located to a region in which the first copper insert 41 is located, and is connected to the first copper insert 41 via the sixth buried copper 52 arranged in layer L5. The first output conductive part 21 , the second output conductive part 32 and the first copper insert 41 may be connected to the power output end via other buried copper, etc. that is not shown in the figures.

[0056] In the above embodiment, the first input conductive part 31 of the first switch element 11 and the second input conductive part 22 of the second switch element 12 are respectively connected to a positive input end (HV+ in Fig. 1 ) and a negative input end (HV- in Fig. 1 ) of the power module, and are respectively connected to two ends of a capacitor 13 (Cdc in Fig. 1 ). More specifically, as shown in Figs. 2 and 3, a PCB may be provided with a second copper insert 42 that is constructed as a portion of a positive copper bar of a half-bridge power module, and this second copper insert 42 is likewise arranged in layers L3 and L4. The third copper layer 311 of the first input conductive part 31 extends from a region in which the multiple first switch elements 11 are located to a region in which the second copper insert 42 is located, and is connected to the second copper insert 42 via the seventh buried copper 53. Similarly, the PCB may be further provided with a third copper insert 43 that is constructed as a portion of a negative copper bar of a half-bridge power module, and this third copper insert 43 is likewise arranged in layers L3 and L4. The second 202401552

[0057] 11 copper layer 221 extends from a region in which the multiple second switch elements 12 are located to a region in which the third copper insert 43 is located, and is connected to the third copper insert 43 via the eighth buried copper 54. In addition, the third copper insert 43 is further connected to a fifth copper layer 56 that is arranged on an outer surface of layer L5, via ninth buried copper 55 that is arranged in layer L5.

[0058] As shown in Figs. 2 and 3, the second copper insert 42 and the first copper insert 41 may be arranged on opposite sides of the multiple first switch elements 11 , and the third copper insert 43 and the first copper insert 41 may be arranged on opposite sides of the multiple second switch elements 12. The second copper insert 42 is connected to the capacitor 13 via a first conductive structure 6. The third copper insert 43 is connected to the capacitor 13 via a second conductive structure 7.

[0059] In the embodiment shown in Fig. 3, the first conductive structure 6 may comprise a first copper-clad portion 61 that is arranged on an outer surface (a surface layer) of layer L1 , multiple first buried copper portions 62 that are arranged on layer L1 , and multiple second buried copper portions 63 that are arranged on layer L2. Optionally, the first conductive structure 6 may further comprise a second copper-clad portion 64 that is formed on an outer surface of layer L2.

[0060] The second conductive structure 7 may comprise a third copper-clad portion 71 that is arranged on an outer surface (a surface layer) of layer L1 and multiple third buried copper portions 72 that are arranged on layer L1. The multiple third buried copper portions 72 are connected between the third copper-clad portion 71 and the second copper layer 221 . As stated above, the second copper layer 221 is connected to the third copper insert 43 via eighth buried copper 54. Thus, the third copper insert 43 can be connected to the third copper-clad portion 71 .

[0061] Fig. 4 shows another embodiment of the first conductive structure 6 and the second conductive structure 7. In this embodiment, the first conductive structure 6 may comprise a first window 65 and a first busbar 66. The first window 65 penetrates layer L1 and layer L2 in a region that corresponds to a second copper insert 42 and extends to an outer side of a PCB. The first busbar 66 is approximately in the shape 202401552

[0062] 12 of an inverted Z, one end of the first busbar 66 being arranged in the first window 65 and being connected to the second copper insert 42, and the other end of the first busbar 66 that is exposed with respect to the PCB being connected to a capacitor 13.

[0063] Correspondingly, the second conductive structure 7 also may comprise a second window 73 and a second busbar 74. The second window 73 penetrates layer L1 and layer L2 in a region that corresponds to a third copper insert 43 and extends to an outer side of a PCB. The second busbar 74 is likewise approximately in the shape of an inverted Z, one end of the second busbar 74 being arranged in the second window 73 and being connected to the third copper insert 43, and the other end of the second busbar 74 that is exposed with respect to the PCB being connected to a capacitor 13. It must be explained that Fig. 4 shows a section that passes through the first window 65 and the second window 73, and, actually, the second input conductive part 22 and the third copper insert 43 have an overlapping portion.

[0064] The first busbar 66 and the second busbar 74 respectively have a portion that is exposed outside the PCB, that is, a portion that is arranged on an outer surface of the PCB. These portions of the first busbar 66 and the second busbar 74 may have an overlapping arrangement, and an insulating sheets may be arranged between the two, as shown in Fig. 4. The insulating sheets may extend between the second busbar 74 and the PCB outer surface to a position where the second window 73 is, thus further ensuring insulation between the second busbar 74 and the PCB.

[0065] As described above, the first switch element 11 , the second switch element 12, the first copper insert 41 , the second copper insert 42 and the third copper insert 43 of the power module are all arranged in intermediate layers of the PCB, i.e. layers L3 and L4; the first output conductive part 21 and the second input conductive part 22 are arranged on layer L2 located above the first switch element 11 and the second switch element 12; and the first input conductive part 31 and the second output conductive part 32 are arranged on layer L5 located below the first switch element 11 and the second switch element 12. Multiple first switch elements 11 (particularly the first semiconductor chip 112) may be connected in parallel between the first copper insert 41 and the second copper insert 42 via the first output conductive part 202401552

[0066] 13

[0067] 21 and the first input conductive part 31 , forming a high-side switch of a half-bridge power module. Multiple second switch elements 12 (particularly the second semiconductor chip 122) may be connected in parallel between the first copper insert 41 and the third copper insert 43 via the second input conductive part 22 and the second output conductive part 32, forming a low-side switch of a half-bridge power module. By means of such a three-dimensional circuit design, the area enclosed by the circuit can be minimized, the width of the wiring is enlarged, and circuit inductance is maximally reduced. Through simulation, circuit inductance other than from the capacitor 13 can be reduced to less than 3 nH.

[0068] The first conductive substrate 111 , the second conductive substrate 121 , the first copper insert 41 , the second copper insert 42 and the third copper insert 43 may all be formed by a copper block that is embedded in intermediate layers of the PCB, and the thickness of this copper block may be at least 400 micrometers. This can better transfer heat at the first semiconductor chip 112, the second semiconductor chip 122, the first busbar 66 and the second busbar 74, etc. to layer L6 that is made of an insulating material with good thermal conductivity, and further transfer the heat to a radiator. The first conductive substrate 111 and the second conductive substrate 121 also can be made of any other suitable material with good electrical and thermal conductivity.

[0069] In particular, the first copper insert 41 in the middle can be dispensed with in a scenario in which only one first switch element 11 and one second switch element 12 are provided. In this case, the first copper layer 211 of the first output conductive part 21 may be directly connected to the top of the second conductive substrate 121 by means of the fifth buried copper 51 , or the fourth copper layer 321 of the second output conductive part 32 may be directly connected to the top of the first conductive substrate 111 by means of the sixth buried copper 52. In a scenario in which only one first switch element 11 and one second switch element 12 are provided, a portion of the first conductive substrate 111 or the second conductive substrate 121 may replace the first copper layer 211 or the fourth copper layer 321 and act as the first output conductive part of the second output conductive part. 202401552

[0070] 14

[0071] The first copper layer 211 , the second copper layer 221 , the third copper layer 311 , the fourth copper layer 321 , the fifth copper layer 56, the first copper-clad portion 61 , the second copper-clad portion 62 and the third copper-clad portion 71 are mainly for making a nominal distinction, and they all may be applied to a surface of a corresponding layer of a PCB by means of a copper-cladding process known to a person skilled in the art. Likewise, the first buried copper 212, the second buried copper 222, the third buried copper 312, the fourth buried copper 322, the fifth buried copper 51 , the sixth buried copper 52, the seventh buried copper 53, the eighth buried copper 54, the ninth buried copper 55, the first buried copper portion 62, the second buried copper portion 63 and the third buried copper portion 72 also are mainly for making a nominal distinction, and they may all be formed in a corresponding layer of a PCB by means of a copper burying process (such as first drilling a hole and then filling the hole with copper foil) known to a person skilled in the art.

[0072] For a person skilled in the art, various amendments and changes may be made to the embodiments disclosed above without departing from the scope or spirit of the present invention. According to the practice of the present invention disclosed in the present description, other embodiments of the present invention will be obvious to a person skilled in the art. The present Description and examples disclosed thereby should be considered only as exemplary; the true scope of the present invention is designated by the appended claims and equivalents thereof.

Claims

20240155215Claims1. A PCB-embedded power module, comprising a PCB and at least one first switch element (11 ) and at least one second switch element (12) that are embedded in the PCB, the first switch element (11 ) being fitted with a first input conductive part(31 ) and a first output conductive part (21 ), the second switch element (12) being fitted with a second input conductive part (22) and a second output conductive part(32), wherein: the first switch element (11 ) comprises a first conductive substrate (111 ) and a first semiconductor chip (112) that is mounted on the first conductive substrate (111 ); the second switch element (12) comprises a second conductive substrate (121 ) and a second semiconductor chip (122) that is mounted on the second conductive substrate (121 ); the first conductive substrate (111 ) and the second conductive substrate (121 ) are both arranged on a first intermediate layer (L3) and a second intermediate layer (L4) of the PCB; the first semiconductor chip (112) and the second semiconductor chip (122) are both arranged on a portion of the first intermediate layer (L3) that faces away from the second intermediate layer (L4); the first input conductive part (31 ) is at least partially arranged on a third intermediate layer (L5) of the PCB and is electrically connected to the first conductive substrate (111 ), and the third intermediate layer (L5) is located on a side of the second intermediate layer (L4) that is opposite to the first intermediate layer (L3); the second input conductive part (22) is at least partially arranged on a fourth intermediate layer (L2) of the PCB and is electrically connected to the second semiconductor chip (122), and the fourth intermediate layer (L2) is located on a side of the first intermediate layer (L3) that is opposite to the second intermediate layer (L4).

2. The PCB-embedded power module as claimed in claim 1 , wherein the first output conductive part (21 ) is at least partially arranged on the fourth intermediate layer (L2) of the PCB, and the first output conductive part (21 )20240155216 comprises a first copper layer (211 ) and first buried copper (212), the first copper layer (211 ) extending in the fourth intermediate layer (L2) in a direction parallel to the first semiconductor chip (112), and the first buried copper (212) electrically connecting the first copper layer (211 ) to the first semiconductor chip (112); the second input conductive part (22) comprises a second copper layer (221 ) and second buried copper (222), the second copper layer (221 ) extending in the fourth intermediate layer (L2) in a direction parallel to the second semiconductor chip (122), and the second buried copper (222) electrically connecting the second copper layer (221 ) to the second semiconductor chip (122); the first input conductive part (31 ) comprises a third copper layer (311 ) and third buried copper (312), the third copper layer (311 ) extending in the third intermediate layer (L5) in a direction parallel to the first semiconductor chip (112), and the third buried copper (312) electrically connecting the third copper layer (311 ) to the first conductive substrate (111 ); the second output conductive part (32) is at least partially arranged on the third intermediate layer (L5) of the PCB, the second output conductive part (32) comprising a fourth copper layer (321 ) and fourth buried copper (322), the fourth copper layer (321 ) extending in the third intermediate layer (L5) in a direction parallel to the second semiconductor chip (122), and the fourth buried copper (322) electrically connecting the fourth copper layer (321 ) to the second conductive substrate (121 ).

3. The PCB-embedded power module as claimed in claim 2, wherein the numbers of the first switch element (11 ) and the second switch element (12) are both more than one, the first copper layer (211 ) and the third copper layer (311 ) respectively at least partially covering a region of each first switch element (11 ), and the second copper layer (221 ) and the fourth copper layer (321 ) respectively at least partially covering a region of each second switch element (12).

4. The PCB-embedded power module as claimed in claim 2, further comprising a first copper insert (41 ) that is arranged in the first intermediate layer (L3) and the second intermediate layer (L4) and is located between the first switch element (11 ) and the second switch element (12), the first copper layer (211 ) being further20240155217 connected to the first copper insert (41 ) via fifth buried copper (51 ) that is at least partially arranged in the fourth intermediate layer (L2), and the fourth copper layer (321 ) being further connected to the first copper insert (41 ) via sixth buried copper (52) that is at least partially arranged in the third intermediate layer (L5).

5. The PCB-embedded power module as claimed in claim 2, further comprising a second copper insert (42) that is arranged in the first intermediate layer (L3) and the second intermediate layer (L4), the third copper layer (311 ) being further connected to the second copper insert (42) via seventh buried copper (53) that is at least partially arranged in the third intermediate layer (L5).

6. The PCB-embedded power module as claimed in claim 5, wherein the second copper insert (42) is connected to a capacitor (13) via a first conductive structure (6) that is at least partially arranged in the fourth intermediate layer (L2).

7. The PCB-embedded power module as claimed in claim 6, further comprising a third copper insert (43) that is arranged in the first intermediate layer (L3) and the second intermediate layer (L4), the second copper layer (221 ) being further connected to the third copper insert (43) via eighth buried copper (54) that is at least partially arranged in the fourth intermediate layer (L2), and being further connected to the capacitor (13) via a second conductive structure (7).

8. The PCB-embedded power module as claimed in claim 6, wherein the first conductive structure (6) comprises a first copper-clad portion (61 ) that is arranged in a top layer of the PCB, a second copper-clad portion (64) that is arranged in the fourth intermediate layer (L2), at least one first buried copper portion (62) that is connected between the first copper-clad portion (61 ) and the second copper-clad portion (64), and at least one second buried copper portion (63) that is connected between the second copper-clad portion (64) and the second copper insert (42).

9. The PCB-embedded power module as claimed in claim 7, wherein the second conductive structure (7) comprises a third copper-clad portion (71 ) that is arranged in a top layer of the PCB, and at least one third buried copper portion (72)20240155218 that is connected between the third copper-clad portion (71 ) and the second copper layer (221 ).

10. The PCB-embedded power module as claimed in claim 6, wherein the first conductive structure (6) comprises a first window (65) and a first busbar (66), the first window (65) penetrating the fourth intermediate layer (L2) in a region that corresponds to the second copper insert (42) and extending to an outer side of the PCB, and the first busbar (66) passing through the first window (65) and being connected to the second copper insert (42).

11. The PCB-embedded power module as claimed in claim 7, wherein the second conductive structure (7) comprises a second window (73) and a second busbar (74), the second window (73) penetrating the fourth intermediate layer (L2) in a region that corresponds to the third copper insert (43) and extending to an outer side of the PCB, and the second busbar (74) passing through the second window (73) and being connected to the third copper insert (43).

12. The PCB-embedded power module as claimed in any one of claims 1 to 11 , wherein the first conductive substrate (111 ) and the second conductive substrate (121 ) are both copper blocks.

13. An inverter, comprising the PCB-embedded power module as claimed in any one of claims 1 to 12.

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