Plating device

Abstract

The present invention improves the uniformity of the thickness distribution of a plating film at a peripheral edge section of a substrate.　A plating module 400 includes: a plating tank 410 for accommodating a plating liquid; an anode 430 that is positioned in the plating tank 410; a substrate holder 440 that is for holding a substrate Wf in a condition in which a surface Wf-a for plating is facing downward; a rotation mechanism 447 that is configured so as to rotate the substrate holder 440; a thief electrode 481 that is positioned in a retreat position, said retreat position being separated from an adjustment position between the anode 430 and the substrate Wf; and an adjustment member 485 that is configured so as to move the thief electrode 481 between the adjustment position and the retreat position.

Description

Plating apparatus

[0001] This application relates to a plating apparatus.

[0002] As an example of a plating apparatus, a cup-type electrolytic plating apparatus is known. The cup-type electrolytic plating apparatus immerses a substrate (for example, a semiconductor wafer) held by a substrate holder with the plating surface facing downward in a plating solution, and applies a voltage between the substrate and an anode to deposit a conductive film on the surface of the substrate.

[0003] Patent Document 1 discloses a technique for equalizing the plating film thickness distribution at the peripheral edge of a substrate by disposing a sheath electrode or an auxiliary anode outside the peripheral edge of the substrate in a cup-type electrolytic plating apparatus.

[0004] U.S. Patent No. 8,858,774

[0005] However, there is room for improvement in improving the uniformity of the plating film thickness distribution at the peripheral edge of the substrate in the plating apparatus of the prior art.

[0006] That is, in the plating apparatus of the prior art, the sheath electrode or the auxiliary anode is fixedly disposed outside the peripheral edge of the substrate. Therefore, the effect of adjusting the plating film thickness by the sheath electrode or the auxiliary anode is concentrated on the outermost peripheral portion of the peripheral edge of the substrate. Thus, there is room for improvement in equalizing the entire plating film thickness distribution at the peripheral edge of the substrate in the prior art.

[0007] Therefore, one object of this application is to improve the uniformity of the plating film thickness distribution at the peripheral edge of the substrate.

[0008] According to one embodiment, a plating apparatus is disclosed, including: a plating tank for containing a plating solution; an anode disposed in the plating tank; a substrate holder for holding a substrate with the plating surface facing downward; a rotation mechanism configured to rotate the substrate holder; at least one of an auxiliary anode and a sheath electrode disposed at a retreat position away from an adjustment position between the anode and the substrate; and an adjustment member configured to move at least one of the auxiliary anode and the sheath electrode between the adjustment position and the retreat position.

[0009] Figure 1 is a perspective view showing the overall configuration of the plating apparatus of this embodiment. Figure 2 is a plan view showing the overall configuration of the plating apparatus of this embodiment. Figure 3 is a schematic longitudinal cross-sectional view showing the configuration of a plating module of one embodiment, showing the state in which the sieve electrode has moved to the retracted position. Figure 4 is a schematic longitudinal cross-sectional view showing the configuration of a plating module of one embodiment, showing the state in which the sieve electrode has moved to the adjustment position. Figure 5 is a schematic perspective view showing the configuration of an adjustment member of one embodiment. Figure 6 is a schematic perspective view showing the configuration of an adjustment member of one embodiment. Figure 7 is a schematic plan view showing the configuration of an adjustment member of one embodiment. Figure 8 is a schematic longitudinal cross-sectional view showing the configuration of a plating module of one embodiment. Figure 9 is a schematic perspective view showing the configuration of a plating module of one embodiment. Figure 10 is a schematic plan view showing an example of switching the placement positions of a partial mask and an auxiliary anode according to the distribution of the plating film thickness at the periphery of the substrate. Figure 11 is a graph for explaining the effect of the plating module of one embodiment. Figure 12 is a schematic diagram showing the switching of the partial mask position and the on / off state of the sieve electrode in a plating module of one embodiment. Figure 13 is a schematic diagram showing the switching of the partial mask position and the on / off state of the sieve electrode in a plating module of one embodiment. Figure 14 is a schematic longitudinal cross-sectional view showing the configuration of a plating module of one embodiment. Figure 15 is a schematic plan view showing an example of switching the placement positions of the partial mask, auxiliary anode, and sieve electrode according to the distribution of the plating film thickness at the periphery of the substrate.

[0010] Embodiments of the present invention will be described below with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and redundant descriptions are omitted.

[0011] <Overall Configuration of Plating Apparatus> Figure 1 is a perspective view showing the overall configuration of the plating apparatus of this embodiment. Figure 2 is a plan view showing the overall configuration of the plating apparatus of this embodiment. As shown in Figures 1 and 2, the plating apparatus 1000 includes a load port 100, a transport robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, a transport device 700, and a control module 800.

[0012] The load port 100 is a module for loading substrates stored in cassettes such as FOUPs (not shown) into the plating apparatus 1000, and for unloading substrates from the plating apparatus 1000 into cassettes. In this embodiment, four load ports 100 are arranged horizontally, but the number and arrangement of load ports 100 are arbitrary. The transport robot 110 is a robot for transporting substrates and is configured to transfer substrates between the load port 100, the aligner 120, the pre-wet module 200, and the spin rinse dryer 600. When transferring substrates between the transport robot 110 and the transport device 700, the transfer of substrates can be done via a temporary placement stand (not shown).

[0013] The aligner 120 is a module for aligning the positions of orientation flats and notches on the substrate to a predetermined direction. In this embodiment, two aligners 120 are arranged side by side horizontally, but the number and arrangement of the aligners 120 are arbitrary. The pre-wet module 200 replaces the air inside the patterns formed on the substrate surface with a treatment solution by wetting the surface of the substrate to be plated with a treatment solution such as pure water or degassed water before the plating process. The pre-wet module 200 is configured to perform a pre-wetting process that makes it easier to supply the plating solution inside the patterns by replacing the treatment solution inside the patterns with the plating solution during plating. In this embodiment, two pre-wet modules 200 are arranged side by side vertically, but the number and arrangement of the pre-wet modules 200 are arbitrary.

[0014] The pre-soak module 300 is configured to perform a pre-soak treatment, which involves etching away an oxide film with high electrical resistance present on the surface of a seed layer formed on the surface of a substrate to be plated before plating, using a treatment solution such as sulfuric acid or hydrochloric acid, thereby cleaning or activating the surface of the substrate. In this embodiment, two pre-soak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the pre-soak modules 300 are arbitrary. The plating module 400 performs the plating treatment on the substrate. In this embodiment, there are two sets of 12 plating modules 400, arranged in a vertical direction of three modules and a horizontal direction of four modules, for a total of 24 plating modules 400, but the number and arrangement of the plating modules 400 are arbitrary.

[0015] The cleaning module 500 is configured to clean the substrate to remove any remaining plating solution after the plating process. In this embodiment, two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin rinse dryer 600 is a module for drying the substrate after the cleaning process by rotating it at high speed. In this embodiment, two spin rinse dryers are arranged side by side in the vertical direction, but the number and arrangement of the spin rinse dryers are arbitrary. The transport device 700 is a device for transporting substrates between multiple modules in the plating apparatus 1000. The control module 800 is configured to control multiple modules of the plating apparatus 1000 and can consist of, for example, a general-purpose computer or a dedicated computer with an input / output interface with an operator.

[0016] An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, substrates stored in cassettes are loaded into the load port 100. Next, the transport robot 110 removes the substrates from the cassettes in the load port 100 and transports them to the aligner 120. The aligner 120 aligns the orientation flats and notches of the substrates to a predetermined direction. The transport robot 110 then transfers the substrates, whose orientation has been aligned by the aligner 120, to the pre-wet module 200.

[0017] The pre-wetting module 200 performs a pre-wetting treatment on the substrate. The transport device 700 transports the pre-wetting substrate to the pre-soak module 300. The pre-soak module 300 performs a pre-soak treatment on the substrate. The transport device 700 transports the pre-soaked substrate to the plating module 400. The plating module 400 performs a plating treatment on the substrate.

[0018] The transport device 700 transports the plated substrates to the cleaning module 500. The cleaning module 500 cleans the substrates. The transport device 700 then transports the cleaned substrates to the spin rinse dryer 600. The spin rinse dryer 600 dries the substrates. The transport robot 110 receives the substrates from the spin rinse dryer 600 and transports the dried substrates to the cassette in the load port 100. Finally, the cassette containing the substrates is discharged from the load port 100.

[0019] <Configuration of the Plating Module> Next, the configuration of the plating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same configuration, only one plating module 400 will be described. Figure 3 is a schematic vertical cross-sectional view showing the configuration of a plating module in one embodiment, showing the state in which the sieve electrode has moved to a position away from the space between the anode and the substrate (referred to as the "retracted position" as appropriate). Figure 4 is a schematic vertical cross-sectional view showing the configuration of a plating module in one embodiment, showing the state in which the sieve electrode has moved to a position between the anode and the substrate (referred to as the "adjusted position" as appropriate).

[0020] As shown in Figures 3 and 4, the plating module 400 includes a plating tank 410 for containing a plating solution. The plating module 400 includes a membrane 420 that separates the inside of the plating tank 410 in the vertical direction. The inside of the plating tank 410 is divided into a cathode region 422 and an anode region 424 by the membrane 420.

[0021] Plating solution is filled into the cathode region 422 and the anode region 424, respectively. The plating module 400 includes a nozzle 426 opening toward the cathode region 422 and a supply source 428 for supplying the plating solution to the cathode region 422 via the nozzle 426. The plating module 400 also includes a mechanism for supplying the plating solution to the anode region 424, but this is not shown in the figure. An anode 430 is provided at the bottom of the plating tank 410 in the anode region 424. A resistor 450 is positioned in the cathode region 422 opposite the membrane 420. The resistor 450 is a component for ensuring uniformity of the plating process on the plated surface Wf-a of the substrate Wf, and is composed of a plate-shaped member with numerous holes formed therein.

[0022] The plating module 400 also includes a substrate holder 440 for holding the substrate Wf with the plated surface Wf-a facing downwards. The substrate holder 440 includes power supply contacts for supplying power to the substrate Wf from a power source (not shown). The substrate holder 440 includes a seal ring holder 442 for supporting the outer edge of the plated surface Wf-a of the substrate Wf, and a frame 446 for holding the seal ring holder 442 in a substrate holder body (not shown). The substrate holder 440 also includes a back plate 444 for pressing the back surface of the plated surface Wf-a of the substrate Wf, and a shaft 448 attached to the back surface of the substrate pressing surface of the back plate 444.

[0023] The plating module 400 includes a lifting mechanism 443 for raising and lowering the substrate holder 440, and a rotating mechanism 447 for rotating the substrate holder 440 so that the substrate Wf rotates around a virtual axis of the shaft 448 (a virtual axis of rotation extending vertically through the center of the surface Wf-a to be plated). The lifting mechanism 443 and the rotating mechanism 447 can be implemented by known mechanisms such as motors. The plating module 400 is configured to plate a metal layer on the surface Wf-a of the substrate Wf by immersing the substrate Wf in the plating solution of the cathode region 422 using the lifting mechanism 443 and applying a voltage between the anode 430 and the substrate Wf.

[0024] The plating module 400 includes a thief electrode 481 positioned in a retracted position away from the adjustment position between the anode 430 and the substrate Wf. The thief electrode 481 is a dummy electrode to be plated. That is, the thief electrode 481 has the function of thinning the plating film thickness on the plated surface Wf-a of the substrate Wf by depositing a portion of the plating film that would normally be deposited on the plated surface Wf-a of the substrate Wf onto the thief electrode 481. The thief electrode 481 may be, for example, an electrode formed in the shape of a plate.

[0025] The plating module 400 includes an adjustment member 485 configured to move the sieve electrode 481 between an adjustment position and a retracted position. An example of the adjustment member 485 is described below.

[0026] Figure 5 is a schematic perspective view showing the configuration of the adjustment member in one embodiment. Figure 6 is a schematic perspective view showing the configuration of the adjustment member in one embodiment. Figure 7 is a schematic plan view showing the configuration of the adjustment member in one embodiment. Figure 7(a) shows the state in which the sieve electrode 481 is in the retracted position, and Figure 7(b) shows the state in which the sieve electrode 481 is in the adjustment position.

[0027] As shown in Figures 5 to 7, the adjustment member 485 comprises a cam member 487, a rotational drive mechanism 486 configured to rotate the cam member 487, and a driven member 488 configured to move the sieve electrode 481 linearly between an adjustment position and a retracted position in accordance with the rotation of the cam member 487. The rotational drive mechanism 486 can be implemented by a known mechanism such as a rotary motor.

[0028] The cam member 487 has a cam body 487b configured to rotate by a rotational drive mechanism 486, and a rotor 487a attached to the cam body 487b. The rotor 487a is attached to the cam body 487b at an eccentric position with respect to the rotation axis of the rotational drive mechanism 486.

[0029] The driven member 488 comprises a driven slider 489 positioned on a base 490-1 and a linear guide 490-2 configured to guide the driven slider 489. A groove 490-1a is formed on the upper surface of the base 490-1 along the same direction as the linear motion direction between the adjustment position and the retracted position of the sieve electrode 481. The driven slider 489 is positioned on the base 490-1 via the linear guide 490-2 positioned in the groove 490-1a. The linear guide 490-2 is configured to guide the driven slider 489 along the groove 490-1a. This allows the driven slider 489 to reciprocate in the direction of the groove 490-1a. The driven slider 489 is positioned opposite the rotary drive mechanism 486, with a cam member 487 in between. A cam groove 489a is formed on the surface of the driven slider 489 facing the rotational drive mechanism 486, extending vertically. The rotor 487a of the cam member 487 is fitted into the cam groove 489a. The sieve electrode 481 is attached to the driven slider 489 via a plate-shaped bracket 483 that extends vertically.

[0030] When the rotary drive mechanism 486 rotates the cam member 487 (cam body 487b), the rotor 487a rotates around the rotation axis of the rotary drive mechanism 486. At this time, the rotor 487a presses against the side surface of the cam groove 489a. As a result, the driven slider 489 moves along the groove 490-1a.

[0031] When the cam member 487 is rotated half a turn (180°) from the state shown in Figures 5 and 6 (retracted position), the driven slider 489 moves the sieve electrode 481 to the adjustment position. When the rotation drive mechanism 486 stops the rotation of the cam member 487 in this state, the sieve electrode 481 remains in the adjustment position.

[0032] On the other hand, when the rotational drive mechanism 486 rotates the cam member 487 another half turn (180°) from this state, the driven slider 489 moves the siege electrode 481 to the retracted position. That is, the driven slider 489 reciprocates along the groove 490-1a in conjunction with the rotation of the cam member 487, thereby allowing the siege electrode 481 to move linearly between the adjustment position and the retracted position. Note that the mechanism of the adjustment member 485 described above is just one example, and various other mechanisms can be used to move the siege electrode 481 between the adjustment position and the retracted position.

[0033] The adjustment member 485 is configured to operate based on the rotation angle of the substrate holder 440. That is, in this embodiment, it is assumed that a region where the plating thickness is thicker than the reference thickness at the periphery of the plated surface Wf-a is known in advance, for example, due to a notch in the substrate Wf or a wiring pattern on the plated surface Wf-a, and that this region is associated with the rotation angle of the substrate holder 440. The adjustment member 485 is configured to position the sieve electrode 481 in a retracted position when the region corresponding to the reference thickness in the plating thickness distribution at the periphery of the plated surface Wf-a of the substrate Wf is within a predetermined angular range (when facing the sieve electrode 481). Furthermore, the adjustment member 485 is configured to turn off the power supply to the sieve electrode 481 when the sieve electrode 481 is in the retracted position or while it is moving. On the other hand, the adjustment member 485 is configured to position the sieve electrode 481 in the adjustment position when, in the plating thickness distribution at the peripheral edge of the plated surface Wf-a of the substrate Wf, there is a region where the plating thickness is thicker than the reference thickness within a predetermined angular range (when facing the sieve electrode 481). Furthermore, the adjustment member 485 is configured to turn on the power supply to the sieve electrode 481 when the sieve electrode 481 is in the adjustment position. In other words, during the plating process, the sieve electrode 481 is configured to move dynamically (movable in the radial direction of the substrate), and the sieve electrode 481 is configured to divert (redirect) different amounts of ion current from different azimuthal angular positions of the substrate.

[0034] According to this embodiment, the sieve electrode 481 is positioned in a retracted position relative to the reference film thickness, while it is positioned in an adjusted position relative to areas with thicker plating film thickness. This effectively suppresses the deposition of the plating film in areas with thicker plating film thickness. As a result, according to this embodiment, the overall plating film thickness distribution at the periphery of the substrate can be effectively made uniform.

[0035] In the above embodiment, an example in which a sieve electrode 481 is placed is shown, but the invention is not limited to this, and an auxiliary anode can be placed instead of the sieve electrode 481, or in combination with the sieve electrode 481. In this case, the adjustment member 485 is configured to place the auxiliary anode in a retracted position when the region corresponding to the reference film thickness is within a predetermined angular range (when facing the auxiliary anode) in the plating film thickness distribution at the periphery of the plated surface Wf-a of the substrate Wf. On the other hand, the adjustment member 485 is configured to place the auxiliary anode in an adjusted position when the region with a thinner plating film thickness than the reference film thickness is within a predetermined angular range (when facing the auxiliary anode) in the plating film thickness distribution at the periphery of the plated surface Wf-a of the substrate Wf. This allows the plating film to be actively deposited on the regions with thin plating films, thereby effectively homogenizing the overall plating film thickness distribution at the periphery of the substrate.

[0036] Furthermore, the above embodiment was described assuming that the region where the plating film thickness is thicker (or thinner) than the reference film thickness is known in advance and is associated with the rotation angle of the substrate holder 440, but it is not limited to this. Other embodiments will be described below.

[0037] Figure 8 is a longitudinal cross-sectional view schematically showing the configuration of a plating module according to one embodiment. Components similar to those shown in the embodiments of Figures 3 and 4 are denoted by the same reference numerals, and redundant explanations are omitted.

[0038] As shown in Figure 8, the plating module 400 includes a film thickness sensor 498 configured to measure the plating thickness of the substrate Wf. The film thickness sensor 498 is configured to measure the plating thickness at the peripheral edge of the plated surface of the substrate Wf. The film thickness sensor 498 is mounted on a resistor 450 so as to be positioned opposite the peripheral edge of the substrate Wf. The film thickness sensor 498 can scan the peripheral edge and measure the plating thickness while the substrate Wf rotates once. As an example, the film thickness sensor 498 can be a distance sensor that measures the distance between the film thickness sensor 498 and the substrate Wf (plated film), or a displacement sensor that measures the displacement of the plated surface of the substrate Wf. Alternatively, the film thickness sensor 498 may be a sensor for estimating the rate of plating thickness formation. As the film thickness sensor 498, for example, an optical sensor such as a white-light confocal type, a potential sensor, a magnetic field sensor, or an eddy current type sensor can be used.

[0039] The adjustment member 485 is configured to move at least one of the auxiliary anode and the sieve electrode between an adjustment position and a retracted position based on the plating thickness at the peripheral edge of the plated surface Wf-a of the substrate Wf, as measured by the film thickness sensor 498.

[0040] In the above embodiment, an example was shown in which the sieve electrode 481 (and / or auxiliary anode) itself is moved between the adjustment position and the retracted position, but the embodiment is not limited thereto. Other embodiments will be described below.

[0041] Figure 9 is a schematic perspective view showing the configuration of a plating module according to one embodiment. As shown in Figure 9, the plating module 400 includes a partial mask 470. The partial mask 470 is a shielding member configured to locally shield the electric field formed between the anode 430 and the substrate Wf when it is positioned in the adjustment position. The partial mask 470 may be, for example, a shielding plate formed in the shape of a plate.

[0042] An auxiliary anode 472 is installed on the partial mask 470. Specifically, the auxiliary anode 472 is attached to the partial mask 470 so as to face the plating surface Wf-a of the substrate Wf when the partial mask 470 is disposed at the adjustment position, and is disposed between the plating surface Wf-a of the substrate Wf and the partial mask 470. The adjustment member 485 is configured to dispose the auxiliary anode 472 at the adjustment position by moving the partial mask 470 from the retracted position to the adjustment position.

[0043] The plating module 400 includes a first power source 478 for applying a voltage between the anode 430 and the substrate Wf, and a second power source 479 for applying a voltage between the auxiliary anode 472 and the substrate Wf. Further, the plating module 400 includes a first switch 473 configured to be able to switch on and off the supply of power to the auxiliary anode 472.

[0044] FIG. 10 is a plan view schematically showing an example of switching the arrangement positions of the partial mask and the auxiliary anode according to the distribution of the plating film thickness at the peripheral portion of the substrate. As shown in FIG. 10, the adjustment member 485 disposes the partial mask 470 (auxiliary anode 472) at the retracted position and sets the first switch 473 to off when a first region Wf-b corresponding to the reference film thickness is within a predetermined angular range (when facing the partial mask 470) in the plating film thickness distribution at the peripheral portion of the plating surface Wf-a of the substrate Wf. On the other hand, the adjustment member 485 disposes the partial mask 470 (auxiliary anode 472) at the adjustment position and sets the first switch 473 to on when a second region Wf-c where the plating film thickness is thinner than the reference film thickness is within a predetermined angular range (when facing the partial mask 470).

[0045] FIG. 11 is a graph for explaining the effect of the plating module according to an embodiment. In the graph of FIG. 11, the horizontal axis represents the radial position from the center to the outermost periphery of the substrate, and the vertical axis represents the change rate of the plating film thickness.

[0046] Graph 101 in FIG. 11 shows, with reference (0%) being the plating film thickness distribution when the partial mask 470 (auxiliary anode 472) is placed in the retracted position and the first switch 473 is set to off. Graph 102 shows the change rate of the plating film thickness with respect to the reference plating film thickness distribution (graph 101) when the partial mask 470 (auxiliary anode 472) is placed in the adjusted position and the first switch 473 is set to off. As shown in graph 102, when the partial mask 470 is placed in the adjusted position and the function of the auxiliary anode 472 is turned off, due to the electric field shielding effect of the partial mask 470, the plating film thickness at the peripheral portion of the plated surface Wf-a of the substrate Wf becomes thinner.

[0047] Graph 103 shows the change rate of the plating film thickness with respect to the reference plating film thickness distribution (graph 101) when the partial mask 470 (auxiliary anode 472) is placed in the retracted position and the first switch 473 is set to on. As shown in graph 103, even when the function of the auxiliary anode 472 is turned on, if the auxiliary anode 472 is fixedly arranged outside the peripheral portion of the substrate Wf, the effect of increasing the plating film thickness by the auxiliary anode concentrates on the outermost peripheral portion of the peripheral portion of the substrate.

[0048] Graph 104 shows the change rate of the plating film thickness with respect to the reference plating film thickness distribution (graph 101) when, as in this embodiment, the partial mask 470 (auxiliary anode 472) is placed in the adjusted position and the first switch 473 is set to on. As shown in graph 104, by turning on the function of the auxiliary anode 472 and arranging the auxiliary anode 472 in the adjusted position, the plating film thickness distribution of the entire peripheral portion of the substrate can be thickened. As a result, according to this embodiment, the uniformity of the plating film thickness distribution of the peripheral portion of the substrate can be improved.

[0049] In the above embodiment, an example in which the auxiliary anode 472 is installed on the partial mask 470 is shown, but it is not limited to this, and a sheath electrode may be installed on the partial mask 470. This will be described below.

[0050] Figure 12 schematically shows the position of the partial mask and the on / off switching of the sieve electrode in a plating module according to one embodiment. In this embodiment, a sieve electrode 481 is installed on the partial mask 470. Specifically, the sieve electrode 481 is attached to the partial mask 470 so as to face the anode 430 when the partial mask 470 is positioned in the adjustment position, and is positioned between the anode 430 and the partial mask 470. The adjustment member 485 is configured to position the sieve electrode 481 in the adjustment position by moving the partial mask 470 from the retracted position to the adjustment position. Note that the above-described installation configuration of the sieve electrode 481 on the partial mask 470 is just one example and is not limited thereto.

[0051] Similar to the embodiment shown in Figure 9, the plating module 400 includes a first power supply 478 and a second power supply 479. The first power supply 478 is configured to apply a voltage between the anode 430 and the substrate Wf. The second power supply 479 is configured to apply a voltage between the anode 430 and the sieve electrode 481. The plating module 400 also includes a switch configured to switch the power supply to the sieve electrode 481 on and off.

[0052] Figure 12 shows the position of the partial mask 470 and the on / off state of the thief electrode 481 in relation to the rotation angle of the substrate holder 210. As shown in Figure 12, the position of the partial mask 470 (thief electrode 481) is changed between a retracted position and an adjusted position depending on a predetermined rotation angle of the substrate Wf. In one example shown in Figure 12, when the rotation angle of the substrate Wf becomes 90 degrees ± α, the adjustment member 485 positions the partial mask 470 (thief electrode 481) in the adjusted position and turns on the power supply to the thief electrode 481. Similarly, in one example shown in Figure 12, when the rotation angle of the substrate Wf becomes 270 degrees ± α', the adjustment member 485 positions the partial mask 470 (thief electrode 481) in the adjusted position and turns on the power supply to the thief electrode 481. The adjustment member 485 repeats this operation while the substrate holder 210 is rotating and the plating process is being performed. Note that α and α' may be equal or different. Furthermore, if we define β' as the period from when the rotation angle of the substrate Wf is 0 degrees until the partial mask 470 is positioned in the adjustment position, and β as the period from when the partial mask 470 is positioned in the retracted position until 180 degrees, then β and β' may be equal or different.

[0053] According to this embodiment, by turning on the function of the sieve electrode 481 and positioning the sieve electrode 481 in the adjustment position, the deposition of the plating film on areas with a thicker plating film at the periphery of the substrate can be effectively suppressed. As a result, according to this embodiment, the overall plating film thickness distribution at the periphery of the substrate can be effectively made uniform.

[0054] In the embodiment shown in Figure 12, the partial mask 470 is stopped after being placed in the retracted position until it is switched to the adjustment position, and also stopped after being placed in the adjustment position until it is switched to the retracted position, but the invention is not limited to these examples. Figure 13 is a schematic diagram showing the switching of the partial mask position and the on / off state of the sieve electrode in a plating module of one embodiment.

[0055] As shown in Figure 13, the adjustment member 485 can also constantly move the partial mask 470 (thief electrode 481) according to a predetermined rotation angle of the substrate Wf. The adjustment member 485 can, for example, regularly change the movement speed of the partial mask 470, or move it at a constant speed to follow the rotation of the substrate Wf.

[0056] In the example shown in Figure 13, the adjustment member 485 can always move the partial mask 470 such that, assuming the partial mask 470 is in the avoidance position when the rotation angle of the substrate Wf is 0 degrees, the partial mask 470 reaches the adjustment position when the rotation angle of the substrate Wf reaches 90 degrees. Subsequently, the adjustment member 485 can always move the partial mask 470 such that when the substrate holder 210 rotates 90 degrees, the partial mask 470 reaches the retracted position, and when it rotates another 90 degrees, the partial mask 470 reaches the adjustment position. In addition, the adjustment member 485 can turn on the power supply to the sieve electrode 481 when the rotation angle of the substrate Wf is in the range of 90 degrees ± α and 270 ± α'.

[0057] In the above embodiment, an example was shown in which either an auxiliary anode 472 or a sieve electrode 481 is installed on the partial mask 470. However, the embodiment is not limited to this, and as will be described below, an auxiliary anode and a sieve electrode may be installed on the partial mask 470. Figure 14 is a schematic longitudinal cross-sectional view showing the configuration of a plating module according to one embodiment. As shown in Figure 14, in this embodiment, an auxiliary anode 472 and a sieve electrode 474 are installed on the partial mask 470. Specifically, the auxiliary anode 472 is installed on the substrate Wf side of the partial mask 470, and the sieve electrode 474 is installed on the anode 430 side of the partial mask 470. Note that the installation configuration of the auxiliary anode 472 and sieve electrode 474 shown in Figure 14 is just an example and is not limited thereto. For example, the sieve electrode 474 may be installed on the substrate Wf side of the partial mask 470, and the auxiliary anode 472 may be installed on the anode 430 side of the partial mask 470.

[0058] In this embodiment, the plating module 400 includes a first switch 473 configured to switch on and off the power supply to the auxiliary anode 472, and a second switch 475 configured to switch on and off the power supply to the sieve electrode 474.

[0059] Figure 15 is a schematic plan view showing an example of switching the placement positions of the partial mask, auxiliary anode, and sieve electrode according to the distribution of plating film thickness at the periphery of the substrate. The adjustment member 485 positions the partial mask 470 in a retracted position and sets the first switch 473 and the second switch 475 to off when the first region Wf-b, which corresponds to the reference film thickness, is within a predetermined angular range in the plating film thickness distribution at the periphery of the plated surface Wf-a of the substrate Wf. As a result, no adjustment is made to the plating film thickness for the first region Wf-b, and the reference film thickness is maintained.

[0060] The adjustment member 485 positions the partial mask 470 in the adjustment position and sets the first switch 473 to ON and the second switch 475 to OFF when the second region Wf-c, in which the plating film thickness is thinner than the reference film thickness, is within a predetermined angular range. As a result, the auxiliary anode 472 is used to adjust the thickness of the plating film in the second region Wf-c, bringing the plating film thickness in the second region Wf-c closer to the reference film thickness.

[0061] The adjustment member 485 positions the partial mask 470 in the adjustment position and sets the second switch 475 to ON and the first switch 473 to OFF when the third region Wf-d, in which the plating thickness is thicker than the reference thickness, is within a predetermined angular range. As a result, for the third region Wf-d, in which the plating thickness is particularly thick, the sieve electrode 481 and the partial mask 470 are used to actively thin the plating thickness, thereby bringing the plating thickness of the third region Wf-d closer to the reference thickness.

[0062] The adjustment member 485 positions the partial mask 470 in the adjustment position and sets the first switch 473 and the second switch 475 to OFF when the fourth region Wf-e, which has a plating thickness thicker than the reference film thickness and a plating thickness thinner than the third region Wf-d, is within a predetermined angular range. As a result, for the fourth region Wf-e, which has a slightly thicker plating thickness, the adjustment is made to gradually thin the plating thickness using only the partial mask 470, thereby bringing the plating thickness of the fourth region Wf-e closer to the reference film thickness.

[0063] According to this embodiment, the plating thickness can be flexibly adjusted for various patterns of the plating thickness at the peripheral edge of the plated surface Wf-a of the substrate Wf, thereby improving the uniformity of the plating thickness distribution at the peripheral edge of the substrate.

[0064] Although several embodiments of the present invention have been described above, the embodiments described above are for the purpose of facilitating understanding of the present invention and do not limit it. The present invention can be modified and improved without departing from its spirit, and of course, equivalents thereof are included in the present invention. Furthermore, any combination or omission of the components described in the claims and specification is possible to the extent that at least some of the above-mentioned problems can be solved or at least some of the effects can be achieved.

[0065] This application discloses a plating apparatus, as one embodiment, comprising: a plating tank for containing a plating solution; an anode disposed in the plating tank; a substrate holder for holding a substrate with the surface to be plated facing downward; a rotating mechanism configured to rotate the substrate holder; at least one of an auxiliary anode and a sieve electrode disposed in a retracted position away from an adjustment position between the anode and the substrate; and an adjustment member configured to move at least one of the auxiliary anode and the sieve electrode between the adjustment position and the retracted position.

[0066] Furthermore, the present invention discloses a plating apparatus in which, as one embodiment, the adjustment member is positioned at the adjustment position when, in the plating film thickness distribution at the peripheral edge of the surface to be plated of the substrate, there is a region where the plating film thickness is thinner than a reference film thickness within a predetermined angular range.

[0067] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, the adjusting member positions the sieve electrode at the adjustment position when, in the plating thickness distribution at the peripheral edge of the surface to be plated of the substrate, there is a region where the plating thickness is thicker than a reference thickness within a predetermined angular range.

[0068] Furthermore, the present application discloses a plating apparatus comprising, in one embodiment, a partial mask configured to locally shield the electric field formed between the anode and the substrate when positioned in the adjustment position, wherein at least one of the auxiliary anode and the sieve electrode is installed on the partial mask, and the adjustment member is configured to position at least one of the auxiliary anode and the sieve electrode in the adjustment position by moving the partial mask from the retracted position to the adjustment position.

[0069] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, the auxiliary anode is installed on the substrate-side surface of the partial mask, and the sieve electrode is installed on the anode-side surface of the partial mask.

[0070] Furthermore, the present application discloses a plating apparatus, as one embodiment, further comprising: a first switch configured to switch on and off the power supply to the auxiliary anode; and a second switch configured to switch on and off the power supply to the sieve electrode.

[0071] Furthermore, the present invention discloses a plating apparatus in which, as one embodiment, the adjustment member is configured such that, when a first region corresponding to a reference film thickness is within a predetermined angular range in the plating film thickness distribution at the peripheral edge of the surface to be plated of the substrate, the partial mask is placed in the retracted position and the first switch and the second switch are set to OFF; when a second region with a plating film thickness thinner than the reference film thickness is within a predetermined angular range, the partial mask is placed in the adjustment position and the first switch is set to ON and the second switch is set to OFF; when a third region with a plating film thickness thicker than the reference film thickness is within a predetermined angular range, the partial mask is placed in the adjustment position and the second switch is set to ON and the first switch is set to OFF; and when a fourth region with a plating film thickness thicker than the reference film thickness and thinner than the third region is within a predetermined angular range, the partial mask is placed in the adjustment position and the first switch and the second switch are set to OFF.

[0072] Furthermore, the present application discloses a plating apparatus for plating a metal layer onto the surface of a substrate to be plated, comprising: a plating tank for containing a plating solution; an anode disposed in the plating tank; a substrate holder for holding the substrate with the surface to be plated facing downward; a rotating mechanism configured to rotate the substrate holder; and a sieve electrode configured to bypass different amounts of ion current from different orientation positions of the substrate, and movable in the radial direction of the substrate between the anode and the substrate.

[0073] 400 Plating module 410 Plating bath 430 Anode 440 Substrate holder 443 Lifting mechanism 447 Rotating mechanism 450 Resistor 470 Partial mask 472 Auxiliary anode 473 First switch 474 Thief electrode 475 Second switch 478 First power supply 479 Second power supply 481 Thief electrode 485 Adjustment member 498 Film thickness sensor 1000 Plating apparatus Wf Substrate Wf-a Surface to be plated Wf-b First area Wf-c Second area Wf-d Third area Wf-e Fourth area

Claims

1. A plating apparatus comprising: a plating tank for containing a plating solution; an anode disposed in the plating tank; a substrate holder for holding a substrate with the surface to be plated facing downward; a rotating mechanism configured to rotate the substrate holder; at least one of an auxiliary anode and a sieve electrode disposed in a retracted position away from an adjustment position between the anode and the substrate; and an adjustment member configured to move at least one of the auxiliary anode and the sieve electrode between the adjustment position and the retracted position.

2. The plating apparatus according to claim 1, wherein the adjustment member is configured to position the auxiliary anode at the adjustment position when, in the plating film thickness distribution at the peripheral edge of the surface to be plated of the substrate, there is a region where the plating film thickness is thinner than a reference film thickness within a predetermined angular range.

3. The plating apparatus according to claim 1, wherein the adjustment member is configured to position the sieve electrode at the adjustment position when, in the plating thickness distribution at the peripheral edge of the surface to be plated of the substrate, there is a region where the plating thickness is thicker than a reference thickness within a predetermined angular range.

4. The plating apparatus according to claim 2 or 3, further comprising a partial mask configured to locally shield the electric field formed between the anode and the substrate when positioned in the adjustment position, wherein at least one of the auxiliary anode and the sieve electrode is mounted on the partial mask, and the adjustment member is configured to position at least one of the auxiliary anode and the sieve electrode in the adjustment position by moving the partial mask from the retracted position to the adjustment position.

5. The plating apparatus according to claim 4, wherein the auxiliary anode is installed on the substrate-side surface of the partial mask, and the sieve electrode is installed on the anode-side surface of the partial mask.

6. The plating apparatus according to claim 5, further comprising: a first switch configured to switch on and off the power supply to the auxiliary anode; and a second switch configured to switch on and off the power supply to the sieve electrode.

7. The plating apparatus according to claim 6, wherein the adjustment member is configured such that, when a first region corresponding to a reference film thickness is within a predetermined angular range in the plating film thickness distribution at the peripheral edge of the surface to be plated of the substrate, the partial mask is placed in the retracted position and the first switch and the second switch are set to OFF; when a second region with a plating film thickness thinner than the reference film thickness is within a predetermined angular range, the partial mask is placed in the adjustment position and the first switch is set to ON and the second switch is set to OFF; when a third region with a plating film thickness thicker than the reference film thickness is within a predetermined angular range, the partial mask is placed in the adjustment position and the second switch is set to ON and the first switch is set to OFF; and when a fourth region with a plating film thickness thicker than the reference film thickness and thinner than the third region is within a predetermined angular range, the partial mask is placed in the adjustment position and the first switch and the second switch are set to OFF.

8. A plating apparatus for plating a metal layer onto the surface of a substrate to be plated, comprising: a plating tank for containing a plating solution; an anode disposed in the plating tank; a substrate holder for holding the substrate with the surface to be plated facing downward; a rotating mechanism configured to rotate the substrate holder; and a sieve electrode configured to bypass different amounts of ion current from different orientation positions of the substrate, and movable in the radial direction of the substrate between the anode and the substrate.

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