Integrated processing device
An integrated processing apparatus for semiconductor manufacturing integrates CVD, ALD, and ALE processes, reducing complexity and enhancing efficiency by performing these operations concurrently.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- INDUSTRY UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
- Filing Date
- 2024-12-12
- Publication Date
- 2026-06-18
AI Technical Summary
Existing semiconductor manufacturing processes face challenges as they are limited to performing either chemical vapor deposition (CVD) or atomic layer deposition (ALD) separately, and atomic layer etching (ALE) is conducted in a separate device, leading to process complexity and inefficiency.
An integrated processing apparatus that can perform CVD, ALD, and ALE processes simultaneously within a single or multiple chambers, utilizing gas and plasma supply units to facilitate these processes.
The apparatus reduces process complexity and enhances convenience by integrating CVD, ALD, and ALE processes, thereby improving the efficiency of semiconductor pattern manufacturing.
Smart Images
Figure KR2024096840_18062026_PF_FP_ABST
Abstract
Description
Integrated processing unit
[0001] The following examples describe integrated processing units used in substrate processing and semiconductor manufacturing.
[0002] In substrate processing and semiconductor manufacturing using a processing device, various semiconductor pattern films are formed. Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) is used as a method for manufacturing such semiconductor patterns. Known technology regarding Atomic Layer Deposition is disclosed in Japanese Patent No. 6258657.
[0003] Meanwhile, a natural oxide film may form on the surface of a CVD-deposited pattern formed through chemical vapor deposition, which can cause problems that degrade the performance of devices containing semiconductor patterns.
[0004] Accordingly, an Atomic Layer Etching (ALE) process is required to remove the native oxide film along with the semiconductor pattern film deposition process.
[0005] However, existing processing devices are implemented to selectively perform either the deposition process based on the described chemical vapor deposition (CVD) or the deposition process based on atomic layer deposition (ALD), and are not implemented to perform both processes integrally. Furthermore, the atomic layer etching process is currently carried out by a separate etching device.
[0006] Therefore, there is a need to propose an apparatus capable of integrally performing a chemical vapor deposition-based deposition process, an atomic layer deposition-based deposition process, and an atomic layer etching process.
[0007]
[0008] One embodiment proposes an apparatus capable of integrally performing a chemical vapor deposition-based deposition process, an atomic layer deposition-based deposition process, and an atomic layer etching process in order to reduce the complexity and improve convenience of the semiconductor pattern manufacturing process.
[0009] However, the technical problems that the present invention aims to solve are not limited to the above problems and can be expanded in various ways without departing from the technical concept and scope of the present invention.
[0010] According to one embodiment, the integrated processing device may include at least one chamber; and a deposition and etching unit that performs a Chemical Vapor Deposition (CVD)-based deposition process and an Atomic Layer Deposition (ALD)-based deposition process on a target loaded within the at least one chamber, and performs an Atomic Layer Etching (ALE) process on an oxide film formed on a deposition pattern of the target.
[0011] According to one aspect, the deposition and etching unit may be characterized by comprising: a gas supply unit that supplies a gas for a chemical vapor deposition-based deposition process, a gas for an atomic layer deposition-based deposition process, and a gas for an atomic layer etching process; and a plasma supply unit that generates and supplies a plasma for an atomic layer deposition-based deposition process and a plasma for an atomic layer etching process.
[0012] According to another aspect, the at least one chamber may be characterized as being provided as a single chamber in which the chemical vapor deposition-based deposition process, the atomic layer deposition-based deposition process, and the atomic layer etching process are performed integrally.
[0013] According to another aspect, the at least one chamber may be provided with a plurality of chambers in which the chemical vapor deposition-based deposition process, the atomic layer deposition-based deposition process, and the atomic layer etching process are each performed, and the deposition and etching unit may be provided to move between the plurality of chambers.
[0014] According to another embodiment, the integrated processing apparatus may include at least one chamber; a CVD and ALD deposition unit that performs a Chemical Vapor Deposition (CVD)-based deposition process and an Atomic Layer Deposition (ALD)-based deposition process on a target loaded within the at least one chamber; and an ALE etching unit that performs an Atomic Layer Etching (ALE) process on an oxide film formed on a deposition pattern of the target.
[0015] According to one aspect, the CVD and ALD deposition unit may be characterized by being equipped with a component that integrally performs the chemical vapor deposition-based deposition process and the atomic layer deposition-based deposition process.
[0016] According to another aspect, a component that integrally performs the chemical vapor deposition-based deposition process and the atomic layer deposition-based deposition process may be characterized by including: a CVD and ALD gas supply unit that supplies a gas for the chemical vapor deposition-based deposition process and a gas for the atomic layer deposition-based deposition process; and an ALD plasma supply unit that generates and supplies a plasma for the atomic layer deposition-based deposition process.
[0017] According to another aspect, the ALE etching unit may be characterized by including an ALE gas supply unit that supplies gas for the atomic layer etching process; and an ALE plasma supply unit that generates and supplies plasma for the atomic layer etching process.
[0018] According to another aspect, the at least one chamber may be characterized by being equipped with a CVD and ALD chamber in which the chemical vapor deposition-based deposition process and the atomic layer deposition-based deposition process are integrally performed, and an ALE chamber in which the atomic layer etching process is performed.
[0019] According to another aspect, the at least one chamber may be provided with a plurality of chambers in which the chemical vapor deposition-based deposition process, the atomic layer deposition-based deposition process, and the atomic layer etching process are each performed, and the CVD and ALD deposition unit may be provided to move between the chamber for the chemical vapor deposition-based deposition process and the chamber for the atomic layer deposition-based deposition process among the plurality of chambers.
[0020] According to another embodiment, the integrated processing apparatus may include at least one chamber; a CVD process unit that performs a Chemical Vapor Deposition (CVD)-based deposition process on a target loaded within the at least one chamber; and an ALD and ALE process unit that performs an Atomic Layer Deposition (ALD)-based deposition process on the target and performs an Atomic Layer Etching (ALE) process on an oxide film formed on a deposition pattern of the target.
[0021] According to one aspect, the ALD and ALE process unit may be characterized by being provided with a component that integrally performs the atomic layer deposition-based deposition process and the atomic layer etching process.
[0022] According to another aspect, a component that integrally performs the atomic layer deposition-based deposition process and the atomic layer etching process may be characterized by including: an ALD and ALE gas supply unit that supplies a gas for the atomic layer deposition-based deposition process and a gas for the atomic layer etching process; and an ALD and ALE plasma supply unit that generates and supplies a plasma for the atomic layer deposition-based deposition process and a plasma for the atomic layer etching process.
[0023] According to another aspect, the at least one chamber may be characterized by being equipped with a CVD chamber in which the chemical vapor deposition-based deposition process is performed, and an ALD and ALE chamber in which the atomic layer deposition-based deposition process and the atomic layer etching process are integrally performed.
[0024] According to another aspect, the at least one chamber may be provided with a plurality of chambers in which the chemical vapor deposition-based deposition process, the atomic layer deposition-based deposition process, and the atomic layer etching process are each performed, and the ALD and ALE process unit may be provided to move between the chamber for the atomic layer deposition-based deposition process and the chamber for the atomic layer etching process among the plurality of chambers.
[0025] One embodiment proposes an apparatus capable of integrally performing a chemical vapor deposition-based deposition process, an atomic layer deposition-based deposition process, and an atomic layer etching process, thereby achieving the technical effect of reducing the complexity and promoting convenience of the semiconductor pattern manufacturing process.
[0026] However, the effects of the present invention are not limited to the above effects and can be extended in various ways without departing from the technical concept and scope of the present invention.
[0027] FIG. 1 is a block diagram illustrating an integrated processing device according to one embodiment.
[0028] FIGS. 2a and 2b are conceptual diagrams for explaining the integrated processing unit illustrated in FIG. 1.
[0029] FIG. 3 is a block diagram illustrating an integrated processing device according to another embodiment.
[0030] FIGS. 4a and 4b are conceptual diagrams for explaining the integrated processing unit illustrated in FIG. 3.
[0031] FIG. 5 is a block diagram illustrating an integrated processing device according to another embodiment.
[0032] FIGS. 6a and 6b are conceptual diagrams for explaining the integrated processing unit illustrated in FIG. 5.
[0033] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited or restricted by the embodiments. Also, the same reference numerals in each drawing indicate the same components.
[0034] Furthermore, the terminology used in this specification is used to appropriately describe preferred embodiments of the present invention, and may vary depending on the intent of the viewer or operator, or the conventions of the field to which the present invention belongs. Accordingly, the definitions of these terms should be based on the content throughout this specification. For example, in this specification, the singular form includes the plural form unless specifically stated otherwise in the text. Also, the terms "comprises" and / or "comprising" used in this specification do not exclude the presence or addition of one or more other components, steps, actions, and / or elements to the mentioned components, steps, actions, and / or elements. Additionally, although terms such as "first," "second," etc., are used in this specification to describe various regions, directions, shapes, etc., these regions, directions, and shapes should not be limited by such terms. These terms are used merely to distinguish one specific region, direction, or shape from another region, direction, or shape. Accordingly, a part referred to as the first part in one embodiment may be referred to as the second part in another embodiment.
[0035] Furthermore, it should be understood that various embodiments of the present invention are different but need not be mutually exclusive. For example, specific shapes, structures, and characteristics described herein may be implemented in other embodiments without departing from the technical spirit and scope of the present invention in relation to one embodiment. Additionally, it should be understood that the location, arrangement, or configuration of individual components within each presented category of embodiments may be changed without departing from the technical spirit and scope of the present invention.
[0036] Hereinafter, with reference to the drawings, an apparatus (integrated processing apparatus) capable of integrally performing a chemical vapor deposition-based deposition process, an atomic layer deposition-based deposition process, and an atomic layer etching process will be described in detail.
[0037] The integrated processing device described below is used to form semiconductor patterns and remove oxide films during substrate processing and semiconductor manufacturing processes.
[0038]
[0039] FIG. 1 is a block diagram illustrating an integrated processing apparatus according to one embodiment. FIG. 2a and 2b are conceptual diagrams for explaining the integrated processing apparatus illustrated in FIG. 1.
[0040] Referring to the drawings, an integrated processing device (100) according to one embodiment may include at least one chamber (110) and a deposition and etching unit (120).
[0041] At least one chamber (110) is a space in which a target to be processed is loaded and a deposition process or an etching process is performed, and may contain a component for the deposition process and the etching process inside, or be connected to a component for the deposition process and the etching process.
[0042] Hereinafter, the target subject to the process may refer to a substrate, etc., on which a semiconductor pattern is deposited.
[0043] The deposition and etching unit (120) can be implemented to perform a chemical vapor deposition (CVD)-based deposition process and an atomic layer deposition (ALD)-based deposition process on a target loaded within at least one chamber (110), and to perform an atomic layer etching (ALE) process on an oxide film formed on a deposition pattern of the target.
[0044] More specifically, the deposition and etching unit (120) may be provided as a component that integrally performs a chemical vapor deposition-based deposition process, an atomic layer deposition-based deposition process, and an atomic layer etching process.
[0045] For example, a deposition and etching unit (120), which is a component that integrally performs a chemical vapor deposition-based deposition process, an atomic layer deposition-based deposition process, and an atomic layer etching process, may be implemented to include a gas supply unit (121) that supplies a gas for a chemical vapor deposition-based deposition process, a gas for an atomic layer deposition-based deposition process, and a gas for an atomic layer etching process, and a plasma supply unit (122) that generates and supplies plasma for an atomic layer deposition-based deposition process and plasma for an atomic layer etching process.
[0046] The gas supply unit (121) may be implemented to include a supply hose (not shown) connected to at least one chamber (110) to supply gases into at least one chamber (110) where a target is loaded, a storage unit (not shown) for storing each of the gases, and a discharge hose (not shown) connected to at least one chamber (110) to discharge the gases supplied into at least one chamber (110).
[0047] The plasma supply unit (122) may be implemented to include an RF power source and electrode (not shown) for generating plasma, a heater (not shown) for controlling the temperature of the target, an RF filter (not shown) for attenuating or removing RF noise, etc.
[0048] At least one chamber (110) may be provided as a single chamber in which a chemical vapor deposition-based deposition process, an atomic layer deposition-based deposition process, and an atomic layer etching process are integrally performed, as shown in FIG. 2a.
[0049] However, not limited to or restricted thereto, at least one chamber (110) may be provided with a plurality of chambers (111, 112, 113) in which a chemical vapor deposition-based deposition process, an atomic layer deposition-based deposition process, and an atomic layer etching process are each performed as shown in FIG. 2b.
[0050] For example, at least one chamber (110) may be provided with a CVD chamber (111) where a chemical vapor deposition-based deposition process is performed, an ALD chamber (112) where an atomic layer deposition-based deposition process is performed, and an ALE chamber (113) where an atomic layer etching process is performed.
[0051] In this case, the target can be moved between a plurality of chambers (111, 112, 113), and the deposition and etching unit (120) can also be configured to be moved between a plurality of chambers (111, 112, 113).
[0052] The integrated processing device (100) described above can perform integrated processing for semiconductor manufacturing by using a deposition and etching unit (120) to form a first deposition pattern on a target through a chemical vapor deposition-based deposition process or an atomic layer deposition-based deposition process, removing a naturally formed oxide film on the first deposition pattern through an atomic layer etching process, and then forming a second deposition pattern on the first deposition pattern through an atomic layer deposition-based deposition process.
[0053] As such, the integrated processing device (100) according to one embodiment can achieve a technical effect of reducing the complexity of the semiconductor pattern manufacturing process and promoting convenience by integrally performing the chemical vapor deposition (CVD)-based deposition process, the atomic layer deposition (ALD)-based deposition process, and the atomic layer etching (ALE) process through a structure including a deposition and etching unit (120) that integrally performs the chemical vapor deposition (CVD)-based deposition process, the atomic layer deposition (ALD)-based deposition process, and the atomic layer etching process.
[0054]
[0055] FIG. 3 is a block diagram illustrating an integrated processing device according to another embodiment, and FIG. 4a and 4b are conceptual diagrams for explaining the integrated processing device illustrated in FIG. 3.
[0056] Referring to the drawings, an integrated processing device (300) according to another embodiment may include at least one chamber (310), a CVD and ALD deposition unit (320), and an ALE etching unit (330).
[0057] At least one chamber (310) is a space in which a target to be processed is loaded and a deposition process or an etching process is performed, and may contain a component for the deposition process and the etching process inside, or be connected to a component for the deposition process and the etching process.
[0058] Hereinafter, the target subject to the process may refer to a substrate, etc., on which a semiconductor pattern is deposited.
[0059] The CVD and ALD deposition unit (320) can be implemented to perform a Chemical Vapor Deposition (CVD)-based deposition process and an Atomic Layer Deposition (ALD)-based deposition process on a target loaded within at least one chamber (310).
[0060] More specifically, the CVD and ALD deposition unit (320) may be provided as a component that integrally performs a chemical vapor deposition-based deposition process and an atomic layer deposition-based deposition process.
[0061] For example, a CVD and ALD deposition unit (320), which is a component that integrally performs a chemical vapor deposition-based deposition process and an atomic layer deposition-based deposition process, may be implemented to include a CVD and ALD gas supply unit (321) that supplies gas for a chemical vapor deposition-based deposition process and gas for an atomic layer deposition-based deposition process, and an ALD plasma supply unit (322) that generates and supplies plasma for an atomic layer deposition-based deposition process.
[0062] The CVD and ALD gas supply unit (321) may be implemented to include a supply hose (not shown) connected to at least one chamber (310) to supply gases into at least one chamber (310) where a target is loaded, a storage unit (not shown) for storing each of the gases, and a discharge hose (not shown) connected to at least one chamber (310) to discharge the gases supplied into at least one chamber (310).
[0063] The ALD plasma supply unit (322) may be implemented to include an RF power source and electrode (not shown) for generating plasma, a heater (not shown) for controlling the temperature of the target, an RF filter (not shown) for attenuating or removing RF noise, etc.
[0064] The ALE etching unit (330) can be implemented to perform an atomic layer etching (ALE) process on an oxide film formed on a deposition pattern of a target.
[0065] Specifically, the ALE etching unit (330) may be provided as a component that performs the atomic layer etching process alone.
[0066] For example, the ALE etching unit (330) may be configured to include an ALE gas supply unit (331) that supplies gas for the atomic layer etching process separately from the CVD and ALD gas supply unit (321), and an ALE plasma supply unit (332) that generates and supplies plasma for the atomic layer etching process separately from the ALD plasma supply unit (322).
[0067] The ALE gas supply unit (331) may be implemented to include a supply hose (not shown) connected to at least one chamber (310) to supply gases into at least one chamber (310) where a target is loaded, a storage unit (not shown) for storing each of the gases, and a discharge hose (not shown) connected to at least one chamber (310) to discharge the gases supplied into at least one chamber (310).
[0068] The ALE plasma supply unit (332) may be implemented to include an RF power source and electrode (not shown) for generating plasma, a heater (not shown) for controlling the temperature of the target, an RF filter (not shown) for attenuating or removing RF noise, etc.
[0069] At least one chamber (310) may be equipped with a CVD and ALD chamber (311) in which a chemical vapor deposition-based deposition process and an atomic layer deposition-based deposition process are integrally performed as shown in FIG. 4a, and an ALE chamber (312) in which an atomic layer etching process is performed.
[0070] However, not limited to or restricted thereto, at least one chamber (310) may be provided with a plurality of chambers (313, 314, 315) in which a chemical vapor deposition-based deposition process, an atomic layer deposition-based deposition process, and an atomic layer etching process are each performed, as shown in FIG. 4b.
[0071] For example, at least one chamber (310) may be equipped with a CVD chamber (313) where a chemical vapor deposition-based deposition process is performed, an ALD chamber (314) where an atomic layer deposition-based deposition process is performed, and an ALE chamber (315) where an atomic layer etching process is performed.
[0072] In this case, the target can be moved between a plurality of chambers (313, 314, 315), and the CVD and ALD deposition unit (320) can be configured to move between the chamber for a chemical vapor deposition-based deposition process (CVD chamber (313)) and the chamber for an atomic layer deposition-based deposition process (ALD chamber (314)) among the plurality of chambers (313, 314, 315).
[0073] The integrated processing device (300) described above can perform integrated processing for semiconductor manufacturing by forming a first deposition pattern on a target through a chemical vapor deposition-based deposition process or an atomic layer deposition-based deposition process using a CVD and ALD deposition unit (320), removing a naturally formed oxide film on the first deposition pattern through an atomic layer etching process using an ALE etching unit (330), and then forming a second deposition pattern on the first deposition pattern through an atomic layer deposition-based deposition process using a CVD and ALD deposition unit (320).
[0074] As such, the integrated processing device (300) according to another embodiment can achieve a technical effect of reducing the complexity of the semiconductor pattern manufacturing process and promoting convenience by performing the chemical vapor deposition (CVD)-based deposition process and the atomic layer deposition (ALD)-based deposition process in an integrated manner through a structure including a CVD and ALD deposition unit (320) that performs the chemical vapor deposition (CVD)-based deposition process and the atomic layer deposition (ALD)-based deposition process in an integrated manner.
[0075]
[0076] FIG. 5 is a block diagram illustrating an integrated processing device according to another embodiment, and FIG. 6a and 6b are conceptual diagrams for explaining the integrated processing device illustrated in FIG. 5.
[0077] Referring to the drawings, an integrated processing device (500) according to another embodiment may include at least one chamber (510), a CVD process section (520), and an ALD and ALE process section (530).
[0078] At least one chamber (510) is a space in which a target to be processed is loaded and a deposition process or an etching process is performed, and may contain a component for the deposition process and the etching process inside, or may be connected to a component for the deposition process and the etching process.
[0079] Hereinafter, the target subject to the process may refer to a substrate, etc., on which a semiconductor pattern is deposited.
[0080] The CVD process unit (520) can be implemented to perform a chemical vapor deposition (CVD)-based deposition process on a target loaded within at least one chamber (310).
[0081] More specifically, the CVD process unit (520) may be provided as a component that performs a chemical vapor deposition-based deposition process alone.
[0082] For example, the CVD process unit (520) may be implemented to include a CVD gas supply unit (521) that supplies gas for a chemical vapor deposition-based process.
[0083] The CVD gas supply unit (521) may be implemented to include a supply hose (not shown) connected to at least one chamber (510) to supply gas into at least one chamber (510) where a target is loaded, a storage unit (not shown) for storing gas, and a discharge hose (not shown) connected to at least one chamber (510) to discharge the gas supplied into at least one chamber (510).
[0084] The ALD and ALE process unit (530) can be implemented to perform an atomic layer deposition (ALD)-based deposition process on a target and to perform an atomic layer etching (ALE) process on an oxide film formed on a deposition pattern of the target.
[0085] More specifically, the ALD and ALE process unit (530) may be provided as a component that integrally performs an atomic layer deposition-based deposition process and an atomic layer etching process.
[0086] For example, the ALD and ALE process unit (530), which is a component that integrally performs an atomic layer deposition-based deposition process and an atomic layer etching process, may be implemented to include an ALD and ALE gas supply unit (531) that supplies gas for an atomic layer deposition-based deposition process and gas for an atomic layer etching process, and an ALD and ALE plasma supply unit (532) that generates and supplies plasma for an atomic layer deposition-based deposition process and plasma for an atomic layer etching process.
[0087] The ALD and ALE gas supply unit (531) may be implemented to include a supply hose (not shown) connected to at least one chamber (510) to supply gases into at least one chamber (510) where a target is loaded, a storage unit (not shown) for storing each of the gases, and a discharge hose (not shown) connected to at least one chamber (510) to discharge the gases supplied into at least one chamber (510).
[0088] The ALD and ALE plasma supply unit (532) may be implemented to include an RF power source and electrode (not shown) for generating plasma, a heater (not shown) for controlling the temperature of the target, an RF filter (not shown) for attenuating or removing RF noise, etc.
[0089] At least one chamber (510) may be equipped with a CVD chamber (511) in which a chemical vapor deposition-based deposition process is performed as shown in FIG. 6a, and an ALD and ALE chamber (512) in which an atomic layer deposition-based deposition process and an atomic layer etching process are performed integrally.
[0090] However, not limited to or restricted thereto, at least one chamber (510) may be provided with a plurality of chambers (513, 514, 515) in which a chemical vapor deposition-based deposition process, an atomic layer deposition-based deposition process, and an atomic layer etching process are each performed as shown in FIG. 6b.
[0091] For example, at least one chamber (510) may be equipped with a CVD chamber (513) where a chemical vapor deposition-based deposition process is performed, an ALD chamber (514) where an atomic layer deposition-based deposition process is performed, and an ALE chamber (515) where an atomic layer etching process is performed.
[0092] In this case, the target can be moved between a plurality of chambers (513, 514, 515), and the ALD and ALE process unit (530) can be configured to move between a chamber for an atomic layer deposition-based deposition process (ALD chamber (514)) and a chamber for an atomic layer etching process (ALE chamber (515)) among the plurality of chambers (513, 514, 515).
[0093] The integrated processing device (500) described above can perform integrated processing for semiconductor manufacturing by forming a first deposition pattern on a target through a chemical vapor deposition-based deposition process or an atomic layer deposition-based deposition process using a CVD process unit (520) or an ALD and ALE process unit (530), removing a naturally formed oxide film on the first deposition pattern through an atomic layer etching process using an ALD and ALE process unit (530), and then forming a second deposition pattern on the first deposition pattern through an atomic layer deposition-based deposition process using an ALD and ALE process unit (530).
[0094] As such, the integrated processing device (500) according to another embodiment can achieve a technical effect of reducing the complexity of the semiconductor pattern manufacturing process and promoting convenience by performing the atomic layer deposition (ALD)-based deposition process and the atomic layer etching (ALE) process in an integrated manner through a structure including an ALD and ALE process unit (530) that performs the atomic layer deposition (ALD)-based deposition process and the atomic layer etching process in an integrated manner.
[0095]
[0096] Although the embodiments have been described above with reference to limited examples and drawings, those skilled in the art can make various modifications and variations from the description above. For example, suitable results can be achieved even if the described techniques are performed in a different order than described, and / or the components of the described system, structure, device, circuit, etc. are combined or assembled in a form different from described, or replaced or substituted by other components or equivalents.
[0097] Therefore, other implementations, other embodiments, and equivalents to the claims also fall within the scope of the claims set forth below.
Claims
1. At least one chamber; A deposition and etching unit that performs a Chemical Vapor Deposition (CVD)-based deposition process and an Atomic Layer Deposition (ALD)-based deposition process on a target loaded within at least one chamber, and performs an Atomic Layer Etching (ALE) process on an oxide film formed on a deposition pattern of the target. An integrated processing unit including 2. In Paragraph 1, The above deposition and etching units are, A gas supply unit for supplying a gas for the chemical vapor deposition-based deposition process, a gas for the atomic layer deposition-based deposition process, and a gas for the atomic layer etching process; and A plasma supply unit that generates and supplies plasma for the atomic layer deposition-based deposition process and plasma for the atomic layer etching process. An integrated processing device characterized by including 3. In Paragraph 1, The above at least one chamber is, An integrated processing apparatus characterized by being equipped with a single chamber in which the chemical vapor deposition-based deposition process, the atomic layer deposition-based deposition process, and the atomic layer etching process are performed integrally.
4. In Paragraph 1, The above at least one chamber is, The apparatus is equipped with a plurality of chambers in which the chemical vapor deposition-based deposition process, the atomic layer deposition-based deposition process, and the atomic layer etching process are each performed, The above deposition and etching units are, An integrated processing device characterized by being configured to move between the plurality of chambers.
5. At least one chamber; A CVD and ALD deposition unit that performs a Chemical Vapor Deposition (CVD)-based deposition process and an Atomic Layer Deposition (ALD)-based deposition process on a target loaded within at least one chamber; and An ALE etching unit that performs an atomic layer etching (ALE) process on an oxide film formed on a deposition pattern of the above target. An integrated processing unit including 6. In Paragraph 5, The above CVD and ALD deposition sections are, An integrated processing device characterized by being equipped with a component that integrally performs the above chemical vapor deposition-based deposition process and the above atomic layer deposition-based deposition process.
7. In Paragraph 6, A component that integrally performs the above chemical vapor deposition-based deposition process and the above atomic layer deposition-based deposition process is A CVD and ALD gas supply unit for supplying gas for the above chemical vapor deposition-based deposition process and gas for the above atomic layer deposition-based deposition process; and An ALD plasma supply unit that generates and supplies plasma for the above atomic layer deposition-based deposition process An integrated processing device characterized by including 8. In Paragraph 5, The above ALE etching unit is, An ALE gas supply unit for supplying gas for the above atomic layer etching process; and An ALE plasma supply unit that generates and supplies plasma for the above atomic layer etching process An integrated processing device characterized by including 9. In Paragraph 5, The above at least one chamber is, An integrated processing apparatus characterized by being equipped with a CVD and ALD chamber in which the above chemical vapor deposition-based deposition process and the above atomic layer deposition-based deposition process are integrally performed, and an ALE chamber in which the above atomic layer etching process is performed.
10. In Paragraph 5, The above at least one chamber is, The apparatus is equipped with a plurality of chambers in which the chemical vapor deposition-based deposition process, the atomic layer deposition-based deposition process, and the atomic layer etching process are each performed, The above CVD and ALD deposition sections are, An integrated processing apparatus characterized by being configured to move between the chamber for the chemical vapor deposition-based deposition process and the chamber for the atomic layer deposition-based deposition process among the plurality of chambers.
11. At least one chamber; A CVD process unit that performs a Chemical Vapor Deposition (CVD)-based deposition process on a target loaded within at least one chamber; and An ALD and ALE process unit that performs an Atomic Layer Deposition (ALD)-based deposition process on the above target and performs an Atomic Layer Etching (ALE) process on an oxide film formed on the deposition pattern of the above target. An integrated processing unit including 12. In Paragraph 11, The above ALD and ALE process units are, An integrated processing device characterized by being equipped with a component that integrally performs the atomic layer deposition-based deposition process and the atomic layer etching process.
13. In Paragraph 12, A component that integrally performs the above atomic layer deposition-based deposition process and the above atomic layer etching process is, An ALD and ALE gas supply unit for supplying a gas for the atomic layer deposition-based deposition process and a gas for the atomic layer etching process; and An ALD and ALE plasma supply unit that generates and supplies plasma for the deposition process based on the above atomic layer deposition method and plasma for the above atomic layer etching process. An integrated processing device characterized by including 14. In Paragraph 11, The above at least one chamber is, A CVD chamber in which the above chemical vapor deposition-based deposition process is performed, and An integrated processing apparatus characterized by being equipped with an ALD and ALE chamber in which the atomic layer deposition-based deposition process and the atomic layer etching process are performed integrally.
15. In Paragraph 11, The above at least one chamber is, The apparatus is equipped with a plurality of chambers in which the chemical vapor deposition-based deposition process, the atomic layer deposition-based deposition process, and the atomic layer etching process are each performed, The above ALD and ALE process units are, An integrated processing device characterized by being configured to move between the chamber for the atomic layer deposition-based deposition process and the chamber for the atomic layer etching process among the plurality of chambers.