Hydrogen addition to low-k dielectric barrier films
WO2026128053A1PCT designated stage Publication Date: 2026-06-18APPLIED MATERIALS INC
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2025-09-29
- Publication Date
- 2026-06-18
Smart Images
Figure US2025048412_18062026_PF_FP_ABST
Abstract
A method of forming a low-k dielectric layer with barrier properties is disclosed. The method includes forming a dielectric layer by plasma enhanced chemical vapor deposition (PECVD) with the addition of hydrogen (H2) gas during the process. The addition of hydrogen (H2) during the PECVD process provides a low-k barrier layer with increased density.
Need to check novelty before this filing date? Find Prior Art