Substrate material, method for producing semiconductor package, method for producing prepreg, method for producing substrate material, and method for inspecting substrate material

Abstract

Provided is a substrate material provided with a fiber-reinforced resin layer which includes an inorganic fiber base material which has a warp and a weft. The inorganic fiber base material is disposed in a manner such that the warp yarns are oriented in either a first direction or a second direction perpendicular to the first direction. The dimensional rate of change in the fiber-reinforced resin layer in the range of 30-260°C is αx in the first direction and αy in the second direction, the difference between αx and αy is 0.3 ppm / °C or less, and αx and / or αyis 3.0-12ppm / °C or less.

Description

Methods for manufacturing substrate materials, semiconductor packages, prepregs, substrate materials, and methods for inspecting substrate materials.

[0001] In recent years, with the rapid increase in functionality of electronic devices, exemplified by AI / HPC, semiconductor packages have been rapidly becoming larger and denser. Regarding the structure of semiconductor packages, the complexity and diversification of the packaging process are progressing not only with the increasing density of surface mounting, but also with the development of inorganic (silicon) interposer or organic interposer (Bridge die / RDL) technologies, and 2.xD packaging and 3D packaging technologies (HBM / Chiplet) using TSV. For example, Resonaq Corporation, with its "Packaging Solution Center" as its main base, is developing next-generation semiconductor packaging process technologies from the customer's (semiconductor manufacturer's) perspective, combining packaging processes and materials.

[0002] This disclosure relates to substrate materials, methods for manufacturing semiconductor packages, methods for manufacturing prepregs, methods for manufacturing substrate materials, and methods for inspecting substrate materials.

[0003] A semiconductor package containing semiconductor components with semiconductor chips is typically mounted on a motherboard (for example, Patent Document 1). The semiconductor components of the semiconductor package are mounted on a wiring board which serves as the semiconductor package substrate, and are connected to the motherboard via the wiring board. The semiconductor package substrate (wiring board) may have a core material including a fiber-reinforced resin layer containing an inorganic fiber base material, and a build-up layer and solder resist provided on the core material.

[0004] Japanese Patent Publication No. 2015-191968

[0005] In the stage prior to mounting semiconductor components onto a semiconductor package substrate, the semiconductor package substrate may be heated to a temperature above the melting point of the metal (e.g., around 260°C) in order to form metal-containing connection terminals (e.g., solder bumps) on the substrate. At this stage, since the semiconductor package substrate is not heated together with components that have significantly different coefficients of thermal expansion (e.g., semiconductor chips), changes in the dimensions of the semiconductor package substrate itself before and after heating have conventionally been relatively acceptable from a manufacturing standpoint.

[0006] Semiconductor package substrates containing inorganic fiber base materials may exhibit different dimensional behaviors depending on the direction when initially exposed to high temperatures (e.g., 260°C, the melting point of the metal in the connection terminals) due to the influence of the orientation of the glass fibers constituting the glass cloth. For example, when large semiconductor packages are manufactured, or when the semiconductor package substrate contains built-in components, even heating before the mounting of semiconductor components may raise concerns about defects such as cracks caused by the anisotropy of the shrinkage rate of the semiconductor package substrate during heating.

[0007] This disclosure relates to reducing the likelihood of semiconductor package malfunctions occurring when the semiconductor package substrate is heated for the first time, prior to the mounting of semiconductor components onto the semiconductor package substrate.

[0008] This disclosure includes: [1] a fiber-reinforced resin layer comprising an inorganic fiber base material having warp and weft threads, wherein the inorganic fiber base material is arranged such that the warp threads are aligned along either a first direction or a second direction perpendicular to the first direction, and the first and second directions are perpendicular to the thickness direction of the fiber-reinforced resin layer, and the dimensional change rate of the fiber-reinforced resin layer in the range of 30°C to 260°C is α in the first direction ｘ And in the second direction mentioned above, α ｙ And α ｘ and α ｙ The difference is 0.3 ppm / °C or less, and α ｘ or α ｙA substrate material in which at least one of them is 3.0 ppm / °C or more and 12 ppm / °C or less. [2] The substrate material according to claim 1, which is used for manufacturing a semiconductor package substrate. [3] Preparing a semiconductor package substrate including a fiber reinforced resin layer containing an inorganic fiber base material having warp and weft, and wiring; Disposing a conductive material containing metal on the semiconductor package substrate; Forming a connection terminal including the conductive material and electrically connected to the wiring by heating the semiconductor package substrate and the conductive material to a temperature not lower than the melting temperature of the conductive material; Mounting a semiconductor component including a semiconductor chip on the semiconductor package substrate so as to be connected to the connection terminal, wherein the inorganic fiber base material is arranged in a direction along either the first direction or a second direction perpendicular to the first direction, the first direction and the second direction are perpendicular to the thickness direction of the fiber reinforced resin layer, and the dimensional change rate of the fiber reinforced resin layer in the range of 30°C to 260°C is α ｘ in the first direction and α ｙ in the second direction, and the difference between α ｘ and α ｙ is 0.3 ppm / °C or less, and α ｘ or α ｙ[4] A method for manufacturing a semiconductor package, wherein at least one of the following is 3.0 ppm / °C or more and 12 ppm / °C or less. [5] The method according to [3], wherein the semiconductor package substrate further comprises an internal component in contact with the fiber-reinforced resin layer. [6] A method for manufacturing a prepreg, comprising impregnating an inorganic fiber substrate having warp and weft threads with a thermosetting resin composition while applying tension in both directions along the warp and weft threads to the inorganic fiber substrate. [7] A method for manufacturing a substrate material, comprising manufacturing a prepreg including an inorganic fiber substrate having warp and weft threads by the method according to [5], forming an intermediate laminate having two metal foils and a plurality of the prepregs disposed between the metal foils, and forming a substrate material having a fiber-reinforced resin layer including the inorganic fiber substrate and the metal foil provided on the fiber-reinforced resin layer by heating and pressurizing the intermediate laminate. [7] A method for manufacturing a substrate material, comprising: preparing a prepreg containing an inorganic fiber base material having warp threads and weft threads; forming an intermediate laminate having two metal foils and the prepreg disposed between the metal foils; and forming a substrate material having a fiber-reinforced resin layer containing the inorganic fiber base material and the metal foil provided on the fiber-reinforced resin layer, wherein in the intermediate laminate, the prepreg is arranged such that the warp threads are aligned along either a first direction or a second direction perpendicular to the first direction, and the first and second directions are perpendicular to the thickness direction of the intermediate laminate, and the intermediate laminate is heated and pressurized while tension is applied to the prepreg in both the first and second directions, thereby forming the substrate material.[8] A substrate material comprising a fiber-reinforced resin layer including an inorganic fiber base material having warp and weft threads, wherein the inorganic fiber base material is arranged such that the warp threads are aligned along either a first direction or a second direction perpendicular to the first direction, and the first and second directions are perpendicular to the thickness direction of the fiber-reinforced resin layer; the rate of change of the fiber-reinforced resin layer in a temperature range including 30°C to 220°C is measured in the first and second directions; and the rate of change of the fiber-reinforced resin layer in the temperature range is α in the first direction. ｘ And in the second direction mentioned above, α ｙ And α ｘ and α ｙ A method for inspecting a substrate material, which includes determining the quality of the substrate material based on the difference between the two.

[0009] This method reduces the likelihood of semiconductor package malfunctions occurring when the semiconductor package substrate is heated for the first time, before semiconductor components are mounted onto it.

[0010] Figure 1 is a plan view showing an example of a substrate material. Figure 2 is a cross-sectional view along the line II-II in Figure 1. Figure 3 is a schematic diagram showing an example of a method for manufacturing a prepreg. Figure 4 is a schematic diagram showing an example of a method for manufacturing a prepreg. Figure 5 is a cross-sectional view showing an example of a method for manufacturing a substrate material. Figure 6 is a cross-sectional view showing an example of a semiconductor package.

[0011] The present invention is not limited to the following examples.

[0012] Figure 1 is a plan view showing an example of a substrate material, and Figure 2 is a cross-sectional view taken along the line II-II in Figure 1. The substrate material 100 shown in Figures 1 and 2 is a sheet-like material having a rectangular main surface with sides along the first direction, the X direction, and sides along the second direction, the Y direction, which is perpendicular to the first direction. The substrate material 100 includes an inorganic fiber base material 15 and a fiber-reinforced resin layer 10 containing an insulating resin layer 17, and metal foils 3 provided on both main surfaces of the fiber-reinforced resin layer 10. Multiple sheet-like inorganic fiber base materials 15 are stacked within the insulating resin layer 17 along the thickness direction (Z direction) of the fiber-reinforced resin layer 10. The inorganic fiber base material 15 is a woven fabric of inorganic fibers composed of warp threads 11 and weft threads 12. In the example of Figures 1 and 2, the inorganic fiber base material 15 is arranged so that the warp threads 11 are along the first direction (X direction) and the weft threads 12 are along the second direction (Y direction). The first and second directions are perpendicular to the thickness direction (Z direction) of the fiber-reinforced resin layer. The inorganic fiber base material 15 may be arranged such that the warp threads 11 are aligned along the second direction (Y direction) and the weft threads 12 are aligned along the first direction (X direction). Within a single fiber-reinforced resin layer 10, inorganic fiber base materials in which the warp threads 11 are aligned along the first direction (X direction) and inorganic fiber base materials in which the warp threads 11 are aligned along the second direction (Y direction) may be mixed.

[0013] The inorganic fiber base material 15 may be a woven fabric containing glass fibers, or it may be glass cloth. The proportion of glass fibers among the inorganic fibers constituting the inorganic fiber base material 15 may be 80-100% by mass, 90-100% by mass, 95-100% by mass, or 99-100% by mass. The glass fibers may be, for example, E-glass, S-glass, or quartz glass. The thickness of the inorganic fiber base material 15 may be 5-200 μm.

[0014] The dimensional change rate of the fiber-reinforced resin layer 10 in the range of 30°C to 260°C is α in the first direction (X direction). ｘ [ppm / °C], α in the second direction (Y direction) ｙ When it is [ppm / °C], α ｘ and α ｙ The difference can be 0.3 ppm / °C or less. α ｘ and α ｙA small difference between these factors can help suppress the occurrence of semiconductor package defects caused by high-temperature heating before semiconductor components are mounted onto the semiconductor package substrate. From a similar perspective, α ｘ and α ｙ The difference may be 0.2 ppm / °C or less. α ｘ and α ｙ The difference may be 0 ppm / °C or more, 0.05 ppm / °C or more, or 0.1 ppm / °C or more.

[0015] α ｘ or α ｙ At least one of them may be 3.0 ppm / °C or higher and 12 ppm / °C or lower. ｘ and α ｙ A small α is advantageous in terms of suppressing warping of the semiconductor package and improving the reliability of the semiconductor package. ｘ or α ｙ At least one of these may be 11 ppm / °C or less, 10 ppm / °C or less, 9.0 ppm / °C or less, 8.0 ppm / °C or less, 7.0 ppm / °C or less, 6.5 ppm / °C or less, or 6.0 ppm / °C or less. α ｘ or α ｙ At least one of them may be 4.0 ppm / °C or higher, or 5.0 ppm / °C or higher. ｘ and α ｙ Both may be within these numerical ranges.

[0016] Dimensional change rate α ｘ and α ｙ This involves measuring the length of the fiber-reinforced resin layer 10 in a first direction (X direction) and a second direction (Y direction) while raising the temperature of the fiber-reinforced resin layer 10 from 30°C to 260°C at a constant rate over 800 seconds, and measuring the length L of the fiber-reinforced resin layer 10 at 30°C in the first direction. ｘ , and the length of the fiber-reinforced resin layer 10 in the first direction at each temperature in 10°C increments between 30°C and 260°C and L ｘ The difference ΔL ｘ To determine the length L of the fiber-reinforced resin layer 10 at 30°C in the second direction. ｙ, and the length of the fiber-reinforced resin layer 10 in the second direction at each temperature in 10°C increments between 30°C and 260°C and L ｙ The difference ΔL ｙ To find the ratio ΔL ｘ / L ｘ When α is plotted on the vertical axis and temperature on the horizontal axis, find the first approximation formula that represents a straight line using a linear function that expresses the relationship between the two, and determine the slope of the straight line represented by the first approximation formula as α. ｘ This means that the ratio ΔL ｙ / L ｙ When α is plotted on the vertical axis and temperature on the horizontal axis, find a second approximation formula that represents a straight line using a linear function that expresses the relationship between the two, and determine the slope of the straight line represented by the second approximation formula as α. ｙ It is determined by a method that includes the following: If the substrate material has a metal foil, the α is determined by measuring the temperature change of the length of the single fiber-reinforced resin layer obtained by removing the metal foil. ｘ and α ｙ The length of the fiber-reinforced resin layer in the first and second directions can be measured by non-contact measurement methods, such as digital image correlation, which involves observing the specimen with a digital camera.

[0017] The dielectric constant of the insulating resin layer 17 at 10 GHz may be 3.0 or less, or 2.8 or less. The dielectric loss tangent of the insulating resin layer 17 at 10 GHz may be 0.005 or less. The dielectric constant can be measured using a test piece 60 mm long, 2 mm wide, and 300 μm thick, which is a cured product of the thermosetting resin composition for forming the insulating resin layer. The test piece may be vacuum dried at 30°C for 6 hours before measurement. The dielectric loss tangent can be calculated from the resonant frequency and no-load Q value obtained at 10 GHz. The measuring device may be a Keysight Technologies E8364B vector network analyzer, a Kanto Electronics Applied Development CP531 (10 GHz resonator), and a CPMAV2 (program). The measurement temperature may be 25°C.

[0018] The glass transition temperature of the insulating resin layer 17 may be 120°C or higher, or 140°C or higher, or 240°C or lower, or 220°C or lower.

[0019] The maximum width of the substrate material 100 may be 200 to 1300 mm. The thickness of the substrate material 100 may be 200 to 2500 μm.

[0020] The substrate material 100 can be obtained, for example, by a method that includes preparing a prepreg containing an inorganic fiber substrate and a thermosetting resin composition impregnated into the inorganic fiber substrate; forming an intermediate laminate having two metal foils and a prepreg disposed between the two metal foils; and forming a substrate material having a fiber-reinforced resin layer containing an inorganic fiber substrate and metal foil provided on the fiber-reinforced resin layer by heating and pressurizing the intermediate laminate.

[0021] Prepregs are generally manufactured by a method that involves continuously impregnating a thermosetting resin composition into a long inorganic fiber substrate (e.g., glass cloth) while feeding it out. When feeding out the inorganic fiber substrate, the tension applied in the transport direction of the inorganic fiber substrate may cause differences in the dimensional behavior of the substrate material when it is first heated, between the warp and weft directions. By appropriately controlling the tension applied to the inorganic fiber substrate, α ｘ and α y A substrate material with a small difference from the above can be formed.

[0022] Figures 3 and 4 are schematic diagrams illustrating an example of a method for manufacturing a prepreg. The inorganic fiber base material 15 shown in Figure 3 has warp and weft threads, which are not shown, and the warp threads are arranged along a first direction (X direction) and the weft threads along a second direction (Y direction). A tension T in the direction along the warp threads (X direction) is applied to the inorganic fiber base material 15. ｘ , and tension T in the direction along the weft (Y direction) ｙBy impregnating the inorganic fiber substrate 15 with the thermosetting resin composition while adding the other components, the prepreg 1 shown in Figure 4 can be obtained. Alternatively, the prepreg 1 can be obtained by impregnating the inorganic fiber substrate 15 with a resin varnish containing the thermosetting resin composition and a solvent, and then removing the solvent from the resin varnish. The prepreg 1 comprises an inorganic fiber substrate 15 having warp threads 11 and weft threads 12, and a thermosetting resin composition 17A impregnated into the inorganic fiber substrate 15. As a method for impregnating the inorganic fiber substrate 15 with the resin varnish, any conventional method such as immersing the inorganic fiber substrate 15 in the resin varnish can be arbitrarily applied. The thermosetting resin composition can also be impregnated into the inorganic fiber substrate 15 by heating and pressurizing a laminate of the thermosetting resin composition and the inorganic fiber substrate 15.

[0023] Tension T ｘ and tension T ｙ By impregnating the inorganic fiber substrate 15 with a thermosetting resin composition while adding both of these, the inorganic fiber substrate 15 can be stretched to the same extent in the direction of the warp threads 11 (X direction) and the direction of the weft threads 12 (Y direction). This allows the α of the substrate material to be stretched. ｘ and α y The difference can become smaller. When resin varnish is used, the tension T is maintained while impregnating with the resin varnish and then removing the solvent from the resin varnish. ｘ and tension T ｙ Both may be continuously added to the inorganic fiber base material 15.

[0024] Ratio T of tension applied to inorganic fiber substrate ｙ / T ｘ However, it may be between 0.5 and 1.5. Tension ratio T ｙ / T ｘ However, it may be 0.6 or more, 0.7 or more, 0.8 or more, or 0.9 or more. Tension ratio T ｙ / T ｘ However, it may be 1.4 or less, 1.3 or less, 1.2 or less, or 1.1 or less.

[0025] The content of the thermosetting resin composition 17A in the prepreg 1 may be 40 to 80% by mass. When the content of the thermosetting resin composition 17A is 40 to 80% by mass, substrate materials with small variations in thickness are easily obtained. The content of the thermosetting resin composition 17A in the prepreg 1 can be determined, for example, by a method that includes dividing a cross-sectional photograph of the prepreg 1 into a region of the inorganic fiber substrate 15 and a region of the thermosetting resin composition 17A by binarization and calculating the area of ​​each. In this case, the density of the inorganic fiber substrate 15 and the density of the thermosetting resin composition 17A may be considered to be the same. Examples of applicable thermosetting resin compositions 17A will be described later.

[0026] The width of prepreg 1 may be, for example, 200 to 1300 mm. The thickness of prepreg 1 may be, for example, 15 to 300 μm.

[0027] Figure 5 is a cross-sectional view showing an example of a method for manufacturing a substrate material using prepregs. The method shown in Figure 5 includes forming an intermediate laminate 5 having two metal foils 3 and a plurality of prepregs 1 placed between the metal foils 3, and forming the substrate material 100 shown in Figures 1 and 2 by heating and pressurizing the intermediate laminate 5. In the intermediate laminate 5, the plurality of prepregs 1 are stacked along the thickness direction (Z direction) of the intermediate laminate 5, with the warp threads 11 aligned with either a first direction (X direction) or a second direction (Y direction). A compressive load is applied to the intermediate laminate 5 in the thickness direction (Z direction) of the intermediate laminate 5.

[0028] The intermediate laminate 5 may be heated and pressurized while tension is applied to the prepreg 1 of the intermediate laminate 5 in both the first direction (X direction) and the second direction (Y direction). Applying tension to the prepreg 1 of the intermediate laminate 5 may also affect the α in the substrate material 100. ｘ and α y This can contribute to reducing the difference. The tension applied to the prepreg 1 in the first direction (X direction) is T. ｘ Then, the tension applied to the prepreg 1 in the second direction (Y direction) is T. ｙ When this is the case, ratio T ｙ / T ｘHowever, the ratio T of tension applied to the prepreg ｙ / T ｘ The numerical range may be similar to the numerical range exemplified for this. The tension T of the prepreg 1 of the intermediate laminate 5 ｘ and T ｙ When added, in the manufacture of prepreg 1, tension T is applied to the glass cloth. ｘ and T ｙ It is not necessary to add both.

[0029] The method for applying tension to the prepreg 1 is not particularly limited, but for example, one method can be applied in which the prepreg is gripped with a gripping device connected to a weight, and tension is applied to the prepreg by the weight of the weight itself.

[0030] By heating and pressurizing the intermediate laminate 5, the thermosetting resin compositions 17A of the multiple prepregs 1 harden and integrate to form an insulating resin layer 17. The temperature of the intermediate laminate 5 may be, for example, 100°C to 250°C. The pressure applied to the intermediate laminate 5 may be, for example, 0.2 to 10 MPa.

[0031] The heating temperature may be changed while pressurizing the intermediate laminate 5. The rate of increase in heating temperature may be 2°C / min or more and 8°C / min or less. The rate of increase in heating temperature may be constant or variable. The heating temperature may be increased starting from, for example, a temperature in the range of 20 to 120°C.

[0032] The heating and pressurizing conditions for forming the substrate material 100 may include raising the temperature of the intermediate laminate 5 to the molding temperature at a predetermined heating rate and maintaining the temperature of the intermediate laminate 5 at the molding temperature. In this case, the molding temperature may be, for example, 100 to 250°C. The heating and pressurizing time at the molding temperature may be, for example, 0.1 to 5 hours.

[0033] The apparatus for heating and pressurizing the intermediate laminate 5 may be a hot press apparatus. The hot press apparatus may be, for example, a multi-stage press, a multi-stage vacuum press, a continuous molding machine, or an autoclave molding machine.

[0034] The metal foil 3 may include copper, gold, silver, nickel, platinum, molybdenum, ruthenium, aluminum, tungsten, iron, titanium, chromium, or an alloy containing at least one of these metal elements. The metal foil 3 may be a copper foil or an aluminum foil, and may be a copper foil.

[0035] The manufactured substrate material 100 can also be inspected based on the difference between α ｘ and α ｙ The method for inspecting the substrate material 100 is, for example, measuring the dimensional change rate of the fiber reinforced resin layer 10 in the temperature range including 30°C to 220°C in the first direction (X direction) and the second direction (Y direction), and the dimensional change rate of the fiber reinforced resin layer 10 in the temperature range is α ｘ in the first direction and α ｙ in the second direction. When this is the case, determining the quality of the substrate material based on the difference between α ｘ and α ｙ is included. In this inspection method, α ｘ and α ｙ are measured by the same method as the above method except that the temperature range is changed from 30°C to 260°C to a predetermined temperature range. When the difference between α ｘ and α ｙ is less than or equal to the target value, the substrate material may be determined to be a good product. The target value of the difference between α ｘ and α ｙ may be 0.7 ppm / °C, 0.6 ppm / °C, 0.5 ppm / °C, 0.4 ppm / °C, 0.3 ppm / °C or 0.2 ppm / °C.

[0036] The substrate material 100 can be used to form a semiconductor package substrate on which semiconductor components, including a semiconductor chip, are mounted. Figure 6 is a cross-sectional view showing an example of a semiconductor package having a semiconductor package substrate that can be obtained from the substrate material 100. The semiconductor package 50 shown in Figure 6 has a semiconductor package substrate 30, semiconductor components 40 including a semiconductor chip mounted on the semiconductor package substrate 30, and bumps 35 provided on the semiconductor package substrate 30 on the side opposite to the semiconductor components 40. The semiconductor package substrate 30 is a wiring substrate including wiring, and has a core material 20 having a first main surface S1 and a second main surface S2, a build-up layer 25 including wiring provided on the first main surface S1 side and the second main surface S2 side of the core material 20, and built-in components 45 provided within the core material 20. On the first main surface S1 side of the core material 20, the semiconductor components 40 are flip-chip connected to the semiconductor package substrate 30 by connection terminals 41. Underfill 42 may be filled between the semiconductor components 40 and the semiconductor package substrate 30. The core material 20 may include a fiber-reinforced resin layer derived from the substrate material 100. The semiconductor component 40 is a component including one or more semiconductor chips and may also include an interposer. The fiber-reinforced resin layer may be in contact with the built-in component 45.

[0037] The internal components 45 may be passive components, and examples include resistors, capacitors, and inductors.

[0038] The semiconductor package 50 can be obtained by a method that includes, for example, preparing a semiconductor package substrate 30 using a substrate material 100, arranging a conductive material containing metal on the semiconductor package substrate 30, forming connection terminals 41 containing the conductive material and electrically connected to wiring by heating the semiconductor package substrate 30 and the conductive material to a temperature above the melting point of the conductive material, and mounting semiconductor components 40 on the semiconductor package substrate 30 so as to be connected to the connection terminals 41. The conductive material may be a metal containing solder. The temperature at which the semiconductor package substrate 30 and the conductive material are heated to form the connection terminals 41 may be, for example, 100°C to 300°C. Regarding the fiber-reinforced resin layer constituting the core material 20, α ｘand α ｙ If the difference is small, the occurrence of defects such as cracks caused by the difference in the degree of thermal expansion and contraction between the internal component 45 and the fiber-reinforced resin layer can be suppressed.

[0039] The semiconductor package substrate 30 can be obtained by using the metal foil 3 of the substrate material 100, or by removing the metal foil 3 and forming a layer including wiring on the exposed fiber-reinforced resin layer. When using the metal foil 3, for example, wiring may be formed on the metal foil 3 by a subtractive method. When the metal foil 3 is removed, wiring may be formed by a semi-additive method. Through-holes may be formed through the fiber-reinforced resin layer 10, and conductive vias may be formed as wiring to fill the through-holes.

[0040] The following describes examples of thermosetting resin compositions that constitute prepregs. In this specification, a thermosetting resin composition means a composition excluding solvents used for forming resin varnishes, etc.

[0041] A thermosetting resin composition contains a thermosetting resin, which is a compound that forms a crosslinked polymer upon heating. Thermosetting resins typically have reactive functional groups that undergo a crosslinking reaction. Reactive functional groups may be, for example, epoxy groups, hydroxyl groups, carboxyl groups, amino groups, amide groups, isocyanate groups, acryloyl groups, methacryloyl groups, vinyl groups, maleic anhydride groups, or combinations thereof.

[0042] The thermosetting resin may be an epoxy resin, which is a compound having epoxy groups; an acrylic monomer, which has (meth)acryloyl groups; or a combination thereof. The epoxy resin may be a compound having two or more epoxy groups. The acrylic monomer may be a compound having two or more (meth)acryloyl groups.

[0043] The thermosetting resin may contain a thermosetting elastomer having a reactive functional group. Examples of thermosetting elastomers include styrene elastomers, olefin elastomers, urethane elastomers, polyester elastomers, polyamide elastomers, acrylic elastomers, and silicone elastomers.

[0044] The content of the thermosetting resin may be 20 to 80% by mass, based on the total mass of the components of the thermosetting resin composition excluding the inorganic fillers described later.

[0045] The thermosetting resin composition may contain an inorganic filler. The inorganic filler may include, for example, one or more inorganic materials selected from alumina, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, crystalline silica, amorphous silica, boron nitride, titania, glass, iron oxide, ceramic, and carbon. The inorganic filler may be a silica filler, an alumina filler, or a combination thereof. The average particle size of the inorganic filler may be 10 μm or less or 5 μm or less. The inorganic filler content may be 0 to 400% by mass, 40 to 300% by mass, or 20 to 100% by mass, based on the total mass of the components of the thermosetting resin composition excluding the inorganic filler.

[0046] The thermosetting resin composition may also contain organic fillers such as rubber-based fillers.

[0047] The thermosetting resin composition may contain a curing accelerator that promotes the curing reaction of the thermosetting resin. Examples of curing accelerators include peroxides, imidazole compounds, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. When the thermosetting resin is an epoxy resin, the curing accelerator may be, for example, an imidazole compound. The amount of the curing accelerator may be 0.1 to 10% by mass, based on the total mass of the components of the thermosetting resin composition other than the inorganic filler.

[0048] The thermosetting resin composition may contain a high molecular weight component. The high molecular weight component may be a thermoplastic resin. The thermoplastic resin may be at least one selected from, for example, acrylic resin, polyamide resin, polyimide resin, and polyurethane resin. The thermoplastic resin may also contain a resin having a siloxane group. For example, acrylic resin, polyamide resin, polyimide resin, or polyurethane resin may have a siloxane group. The resin having a siloxane group may be a silicone resin. The thermoplastic resin may also contain a polyimide resin having a siloxane group. The content of the thermoplastic resin may be 20 to 80% by mass, based on the total mass of the components other than inorganic fillers in the thermosetting resin composition.

[0049] The thermosetting resin composition may contain adhesion promoters. Examples of adhesion promoters include silane coupling agents, triazole compounds, and tetrazole compounds. The content of the silane coupling agent may be 0.1 to 20% by mass, based on the total mass of components other than inorganic fillers in the thermosetting resin composition. The content of the triazole compounds and tetrazole compounds may be 0.1 to 20% by mass, based on the total mass of components other than inorganic fillers in the thermosetting resin composition.

[0050] The thermosetting resin composition may contain an ion scavenger. The ion scavenger may be an organic ion scavenger such as a triazine thiol compound and a phenolic reducing agent, or an inorganic ion scavenger such as a bismuth-based, antimony-based, magnesium-based, aluminum-based, zirconium-based, calcium-based, titanium-based, tin-based, or a mixture thereof. The content of the ion scavenger may be 0.01 to 10% by mass, based on the total mass of the components of the thermosetting resin composition other than the inorganic filler.

[0051] The thermosetting resin composition may contain an antioxidant. Examples of antioxidants include benzophenone-based, benzoate-based, hindered amine-based, benzotriazole-based, or phenol-based antioxidants. The antioxidant content may be 0.01 to 10% by mass, based on the total mass of components other than inorganic fillers in the thermosetting resin composition.

[0052] Preparation Example of Substrate Material A plurality of prepregs having rectangular main surfaces, each containing a glass cloth having warp and weft threads orthogonal to each other, were prepared. In the prepregs, the glass cloth was arranged such that the direction of the warp threads was along one side of the rectangular main surface. An intermediate laminate was formed by sandwiching several laminated prepregs between two copper foils, and the substrate material was formed by heating and pressing the intermediate laminate with a press machine. To form the intermediate laminate, the plurality of prepregs were stacked such that the directions of the warp threads of the glass cloth were all the same.

[0053] From the obtained substrate material, the copper foil was removed, and a test piece of a fiber-reinforced resin layer having a square main surface of 50 mm × 50 mm was prepared. The dimensional change when this test piece was heated from 30°C to 260°C at a constant heating rate over 800 seconds was measured by the digital image correlation method. From the measurement results, the length L at 30°C in the first direction (the direction of the warp threads) of the test piece ｘ , and the length in the first direction of the test piece at each temperature every 10°C between 30°C and 260°C and L ｘ The difference ΔL ｘ And the length L at 30°C in the second direction (the direction of the weft threads) of the test piece ｙ , and the length in the second direction of the test piece at each temperature every 10°C between 30°C and 260°C and L ｙ The difference ΔL ｙ were obtained. A first approximation formula representing a straight line by a linear function showing the relationship between the two when the ratio ΔLx / Lx is on the vertical axis and the temperature is on the horizontal axis was obtained, and the slope of the straight line represented by the first approximation formula was defined as α ｘ . A second approximation formula representing a straight line by a linear function showing the relationship between the two when the ratio ΔL ｙ / L ｙ is on the vertical axis and the temperature is on the horizontal axis was obtained, and the slope of the straight line represented by the second approximation formula was defined as α ｙ . The dimensional change rate α ｘ in the direction of the warp threads was 6.3 ppm / °C, and the dimensional change rate α ｙ in the direction of the weft threads was 6.6 ppm / °C. The difference between α ｘ and α ｙ was 0.3 ppm / °C.

[0054] 1...Prepreg, 3...Metal foil, 5...Intermediate laminate, 10...Fiber-reinforced resin layer, 11...Warp, 12...Weft, 15...Inorganic fiber substrate, 30...Semiconductor package substrate, 40...Semiconductor component, 41...Connector, 45...Built-in component, 50...Semiconductor package, 100...Substrate material, T ｘ , T ｙ ...Tension, α ｘ , α ｙ ...rate of dimensional change.

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