Heating plate structure for improving thin film uniformity, and semiconductor device

Abstract

Disclosed are a heating plate structure for improving thin film uniformity, and a semiconductor device. The heating plate structure comprises: a tray body, located in a reaction chamber and used for supporting a substrate for thin film deposition; and, a ground electrode, provided inside the tray body and used for conducting radio frequency energy out. The ground electrode comprises a first region having a first embedding depth and a second region having a second embedding depth, and the second embedding depth is greater than the first embedding depth. By means of the heating plate structure, the overall uniformity of thin film deposition can be significantly improved.

Description

Heating plate structures and semiconductor devices for improving thin film uniformity Technical Field

[0001] This invention relates to the technical field of semiconductor manufacturing, and specifically to a heating plate structure and a semiconductor device. Background Technology

[0002] As semiconductor device manufacturing processes continue to advance, the requirements for thin film uniformity are constantly increasing. The heating plate, serving as the lower electrode in plasma-enhanced chemical vapor deposition (PECVD) equipment, has a crucial impact on the performance of thin film processes.

[0003] However, in existing technologies, the structure and arrangement of the grounding electrode in the heating plate are limited, making it impossible to ensure consistent reaction conditions across the entire substrate surface, thus failing to obtain a uniform thin film. Currently, the heating plates in PECVD equipment cannot reduce the uniformity of the deposited thin film on the substrate surface to below 1.2%.

[0004] In order to solve the above-mentioned problems in the prior art, there is an urgent need in the art for an improved heating plate structure that can significantly improve the overall uniformity of thin film deposition. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, the present invention provides a heating plate structure and a semiconductor device that can significantly improve the overall uniformity of thin film deposition.

[0007] Specifically, the heating plate structure provided by the first aspect of the present invention includes: a tray body located within a reaction chamber for supporting a substrate for thin film deposition; and a ground electrode disposed inside the tray body for discharging radio frequency energy, wherein the ground electrode includes a first region having a first embedment depth and a second region having a second embedment depth, and the second embedment depth is greater than the first embedment depth.

[0008] Furthermore, in some embodiments of the present invention, the first region is located in the central region of the grounding electrode and aligned with the air inlet above the heating plate structure, and the second region is located in the edge region of the grounding electrode and away from the air inlet.

[0009] Furthermore, in some embodiments of the present invention, the depth difference obtained by subtracting the first embedment depth from the second embedment depth is less than the first preset depth difference and greater than the second preset depth difference.

[0010] Furthermore, in some embodiments of the present invention, the first preset depth difference is 0.3 mm, and the second preset depth difference is 0.1 mm.

[0011] Furthermore, in some embodiments of the present invention, the grounding electrode includes any one of a first shape with a central depression, a second shape with a central convexity, and a third shape with continuous undulations.

[0012] Furthermore, in some embodiments of the present invention, the grounding electrode is the first shape or the second shape, and the angle between the edge of the grounding electrode and the upper surface of the tray body is in the range of 30° to 160°.

[0013] Furthermore, in some embodiments of the present invention, the diameter of the grounding electrode is larger than the diameter of the substrate and smaller than the diameter of the tray body, wherein the distance between the depth variation region of the grounding electrode and the edge of the grounding electrode is 3 to 15 mm.

[0014] Furthermore, in some embodiments of the present invention, the heating plate structure is applied in a high-frequency electric field with a frequency range of 2MHz to 100MHz, so that the total impedance in the plate body and the embedment depth of the grounding electrode conform to the following rule:

[0015] Among them, Z total Z represents the total impedance of the heating plate structure. C Indicates capacitive and Z L Indicates the inductive reactance of the loop and Z L =ωL, where ω represents the angular frequency of the alternating current, C is the capacitance, d represents the embedment depth of the grounding electrode, ε represents the dielectric constant of the medium between the grounding electrode and the upper surface of the tray body, S represents the area of ​​the grounding electrode, L is the inductance, and Z L Greater than Z C Z total For a positive value, the greater the burial depth d of the corresponding grounding electrode, the greater the total impedance Z. total The smaller the value, the greater the current in the tray body.

[0016] Furthermore, the semiconductor device provided according to the second aspect of the present invention includes: a reaction chamber having an inlet at the top for introducing process gas; and the heating plate structure provided in the first aspect of the present invention, located in the reaction chamber for supporting a substrate for thin film deposition.

[0017] Furthermore, in some embodiments of the present invention, the semiconductor device further includes: a radio frequency power supply for providing a high-frequency power signal to the reaction chamber; and a power electrode disposed in the upper part of the reaction chamber, receiving the high-frequency power signal and forming a high-frequency electric field with a frequency range of 2MHz to 100MHz with the ground electrode to ionize the process gas and deposit a thin film on the substrate surface, wherein the heating plate structure is applied in the high-frequency electric field so that the total impedance in the plate body conforms to the following rule with the embedment depth of the ground electrode:

[0018] Among them, Z total Z represents the total impedance of the heating plate structure. C Indicates capacitive and Z L Indicates the inductive reactance of the loop and Z L =ωL, where ω represents the angular frequency of the alternating current, C is the capacitance, d represents the embedment depth of the grounding electrode, ε represents the dielectric constant of the medium between the grounding electrode and the upper surface of the tray body, S represents the area of ​​the grounding electrode, L is the inductance, and Z L Greater than Z C Z total For a positive value, the greater the burial depth d of the corresponding grounding electrode, the greater the total impedance Z. total The smaller the value, the greater the current in the tray body. Attached Figure Description

[0019] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0020] Figure 1 shows a schematic diagram of the structure of a semiconductor device according to some embodiments of the present invention;

[0021] Figure 2 shows a schematic diagram of a heating plate structure provided according to some other embodiments of the present invention;

[0022] Figures 3A, 3B, and 3C respectively show three shapes of grounding electrodes provided according to some embodiments of the present invention;

[0023] Figure 4 shows a schematic diagram of the mesh structure of the grounding electrode provided according to some embodiments of the present invention; and

[0024] Figure 5 shows a schematic diagram of the structure of the depth variation region in the grounding electrode provided according to some embodiments of the present invention.

[0025] Reference numerals: 10 Semiconductor device; 100 Heating plate structure; 110 Tray body; 111 Upper surface; 120 Grounding electrode; 121 Mesh structure; 122 Depth variation region; 130 Power electrode; 140 Plasma; d1 First embedment depth; d2 Second embedment depth; and Δd Depth difference. Detailed Implementation

[0026] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0027] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0028] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0029] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0030] As mentioned above, in the prior art, the structure and arrangement of the grounding electrode in the heating plate are limited, making it impossible to ensure consistent reaction conditions across the entire substrate surface, thus failing to obtain a uniform thin film. Currently, the heating plates in PECVD equipment cannot reduce the uniformity of the film deposited on the substrate surface to below 1.2%.

[0031] To address the aforementioned problems in the prior art, the present invention provides a heating plate structure and a semiconductor device that can significantly improve the overall uniformity of thin film deposition.

[0032] In some non-limiting embodiments, the heating plate structure provided in the first aspect of the present invention can be configured in the semiconductor device provided in the second aspect of the present invention.

[0033] The working principle of the heating plate structure described above will be described below with reference to some embodiments of semiconductor devices. Those skilled in the art will understand that these embodiments of semiconductor devices are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all operating methods or functions of the heating plate structure. Similarly, the heating plate structure is also only one non-limiting implementation provided by the present invention and does not constitute a limitation on other configurations in these semiconductor devices.

[0034] Please refer to Figure 1, which shows a schematic diagram of the structure of a semiconductor device provided according to some embodiments of the present invention.

[0035] As shown in Figure 1, in some embodiments of the present invention, the semiconductor device 10 may include a reaction chamber for providing a reaction space for thin film deposition, and an air inlet may be included above the interior of the reaction chamber for introducing process gases. Inside the reaction chamber, a heating plate structure 100 may be included for supporting the substrate for thin film deposition. By employing the heating plate structure 100 provided by the present invention, the thickness of the thin film deposited on the substrate can achieve a target uniform thickness.

[0036] Optionally, the semiconductor equipment may specifically be a PECVD device to perform capacitively coupled plasma (CCP) discharge in the reaction chamber to activate the process gas and deposit it on the substrate surface to form a thin film.

[0037] Specifically, as shown in Figure 1, the semiconductor device 10 may further include a radio frequency power supply for providing a high-frequency power signal to the reaction chamber. The heating plate structure 100 may include a ground electrode 120. A power electrode 130 may be included in the upper part of the reaction chamber for receiving the high-frequency power signal and forming a high-frequency electric field with a frequency range of 2MHz to 100MHz with the ground electrode 120 in the heating plate structure 100. When the intensity of the high-frequency electric field is sufficiently high, it causes gas molecules to ionize, generating plasma 140 to activate the process gas and cause it to deposit on the substrate surface. In this embodiment, the ground electrode 120 provides a stable potential reference point, allowing the plasma 140 to continuously exist between the two electrodes to maintain a stable discharge of the plasma 140.

[0038] Further, as shown in FIG1, in some embodiments of the present invention, the heating plate structure 100 may include a tray body 110 for supporting the substrate for thin film deposition. A ground electrode 120 may be provided inside the tray body 110 for dissipating radio frequency energy. Furthermore, the ground electrode 120 in the tray body 110 may also be connected to a heating system to maintain the substrate at a specific temperature, optimizing the growth characteristics and quality of the thin film.

[0039] In some embodiments, the ground electrode 120 may be made of a metallic material with a coefficient of thermal expansion similar to that of the tray body 110. Optionally, the tray body 110 may be made of one or more ceramic materials; the lower the temperature of the heating plate structure 100 made of ceramic material, the faster the thin film deposition rate. Correspondingly, in this case, the ground electrode 120 may be made of other metallic materials with coefficients of thermal expansion substantially similar to those of ceramic materials, such as molybdenum or tungsten, thereby extracting radio frequency energy.

[0040] Further, as shown in FIG1, the grounding electrode 120 includes a first region having a first embedment depth d1 and a second region having a second embedment depth d2, wherein the second embedment depth d2 is greater than the first embedment depth d1, which is used to compensate for the difference in film thickness caused by the difference in flow rate of process gas distributed in different regions on the surface of the heating plate structure 100, and improve the uniformity of the film deposited on the substrate surface.

[0041] Specifically, please refer to Figure 2, which shows a schematic diagram of a heating plate structure provided according to some embodiments of the present invention.

[0042] As shown in Figure 2, in some optional embodiments, the first region can be located in the central region of the ground electrode 120 and aligned with the air inlet above the heating plate structure 100. The second region can be located in the edge region of the ground electrode 120 and away from the air inlet. Since the flow rate of the process gas on the upper surface of the heating plate structure 100 corresponding to the first region is usually greater than the flow rate of the process gas on the upper surface of the heating plate structure 100 corresponding to the second region, the deposition current in the first and second regions can be adjusted by adjusting the electrode embedment depth of the first and second regions of the ground electrode 120.

[0043] Specifically, in some embodiments of the present invention, the grounding electrode 120 can be applied to a high-frequency electric field with a frequency range of 2MHz to 100MHz. In this case, the total impedance in the tray body 110 and the embedment depth of the grounding electrode 120 can conform to the following rules:

[0044] Among them, Z total Z represents the total impedance of the heating plate structure. C Indicates capacitive and Z L Indicates the inductive reactance of the loop and Z L =ωL, where ω represents the angular frequency of the alternating current, C is the capacitance, d represents the embedment depth of the grounding electrode, ε represents the dielectric constant of the medium between the grounding electrode and the upper surface of the tray body, S represents the area of ​​the grounding electrode, and L is the inductance.

[0045] According to the capacitive reactance formula: The greater the burial depth d of the grounding electrode, the smaller the capacitance C, and the corresponding capacitive reactance Z. C The larger it is. And according to the inductive reactance formula: Z L =ωL, the larger the inductance L, or the higher the angular frequency ω of the alternating current, the higher its corresponding inductive reactance Z. L The larger.

[0046] In response, within the high-frequency range of 2MHz to 100MHz, Z L Greater than Z C Ztotal When the value is positive, the greater the embedment depth d of the grounding electrode 120, the greater the total impedance Z in the heating plate structure 100. total The smaller the current, the greater the current in the tray body 110. This means that the heating power of the heating plate structure 100 can be changed by adjusting the embedment depth of the ground electrode 120 in the tray body 110, thereby directly adjusting the deposited film thickness. The greater the current in the tray body 110, the greater the film thickness deposited on the substrate surface thereon.

[0047] Furthermore, based on the total impedance Z in the aforementioned tray body 110... total The relationship between the embedment depth d of the grounding electrode 120 and the uniformity of the current distribution in the tray body 110 can be determined. If the embedment depth of the grounding electrode 120 is not uniform, the uniformity of the generated plasma 140 will be directly affected, resulting in a decrease in the uniformity of the deposited film.

[0048] Furthermore, in some embodiments, the depth difference Δd obtained by subtracting the first embedment depth d1 from the second embedment depth d2 can be less than the first preset depth difference and greater than the second preset depth difference. Optionally, the first preset depth difference can preferably be 0.3 mm, and the second preset depth difference can preferably be 0.1 mm, so that the depth difference Δd between the second region and the first region in the grounding electrode 120 and the embedment depth to the upper surface 111 of the tray body 110 is between 0.1 mm and 0.3 mm. If the depth difference Δd is greater than 0.3 mm or less than 0.1 mm, it is easy to cause a large difference in film thickness between the central region and the edge region of the film deposited on the substrate surface, resulting in poor film uniformity. In addition, when the depth difference Δd is less than 0.3 mm, the uniformity of the film deposited on the substrate surface can be further reduced to below 0.8%.

[0049] In addition, please refer to Figures 3A, 3B, and 3C, which respectively show three shapes of grounding electrodes provided according to some embodiments of the present invention.

[0050] As shown in Figure 3A, in some optional embodiments, the ground electrode 120 can be configured as a first shape, such as a bowl, with a central depression, corresponding to the first region located in the central region of the ground electrode 120, while the second region is located in the edge region of the ground electrode 120. The ground electrode 120 with the first shape can be used to reduce the film thickness deposited in the central region of the substrate, thereby improving the film thickness difference between the center and the edge of the film.

[0051] Optionally, as shown in Figure 3B, in other embodiments, the process parameters within the reaction chamber can be adjusted, such as by reducing the pressure within the reaction chamber, to accelerate the flow rate of the process gas. This results in a more uniform and sufficient gas flow and plasma distribution in the central region of the substrate compared to the edge region, potentially leading to a faster deposition rate in the central region and consequently, a thinner film in the central region and a thicker film in the edge region. In this case, the ground electrode 120 can also be configured as a second shape, such as an inverted bowl with a central protrusion. In this embodiment, the central region of the ground electrode 120 is designated as the second region, while its edge region is designated as the first region, so that the second embedment depth d2 of the central region is greater than the first embedment depth d1 of the edge region, thereby increasing the deposition current in the central region. The second-shaped ground electrode 120 can be used to increase the film thickness deposited in the central region of the substrate, thereby improving the thickness difference between the film center and the edge.

[0052] In some alternative embodiments, as shown in FIG3C, the ground electrode 120 may also be a continuously undulating third shape. Generally speaking, a continuously undulating ground electrode 120 will lead to a decrease in the uniformity of the thin film. However, in the thin film deposition process of some special process materials, if the original deposited film thickness difference and its deposition area do not have a fixed pattern, a third-shaped ground electrode 120 can be used to specifically reduce the film thickness difference across the entire area of ​​the substrate surface.

[0053] Furthermore, in some preferred embodiments, when the ground electrode 120 is the first shape in FIG. 3A or the second shape in FIG. 3B, in order to better control the shape of the ground electrode 120, the angle between the edge of the ground electrode 120 and the upper surface 111 of the tray body 110 can be set to be in the range of 30° to 160°. If the angle between the two is too large or too small, it is easy to cause the ground electrode 120 to undergo undesirable deformation, thereby causing the uniformity of the film to deteriorate.

[0054] Furthermore, in the above embodiment, the first embedment depth d1 of the first region in the grounding electrode 120 can be 1.1 mm. If the first embedment depth of the first region in the grounding electrode 120 is too shallow, it is easy to cause electrostatic force on the upper surface 111 of the tray body 110, thereby causing the particle size and uniformity of the deposited film to deteriorate.

[0055] Next, please refer to Figure 4, which shows a schematic diagram of the mesh structure of the grounding electrode provided according to some embodiments of the present invention.

[0056] As shown in Figure 4, in some embodiments, the ground electrode 120 can be configured as a mesh structure 121, and the mesh spacing can be in the range of 1 to 10 mm. The smaller the gap between the mesh structures in the ground electrode 120, the better the radio frequency energy can be discharged, thereby improving the uniformity of film formation.

[0057] Further, please refer to Figure 5, which shows a schematic diagram of the structure of the depth variation region in the grounding electrode provided according to some embodiments of the present invention.

[0058] As shown in Figure 5, in some embodiments, the diameter of the ground electrode 120 can be larger than the diameter of the substrate and smaller than the diameter of the tray body 110. Optionally, the diameter of the tray body 110 in the heating plate structure 100 is typically around 330 mm, and the diameter of the substrate is typically around 300 mm. Therefore, the diameter of the ground electrode 120 can be larger than 300 mm and smaller than 330 mm, and the distance h between the depth variation region 122 in the ground electrode 120 and the edge of the ground electrode 120 can be 3–15 mm, thereby ensuring that the radio frequency energy can be completely extracted. If the distance h between the depth variation region 122 in the ground electrode 120 and the edge of the ground electrode 120 is less than 3 mm, the radio frequency extraction rate is easily reduced.

[0059] As can be seen from the embodiments listed above, by adjusting the difference in embedment depth and shape between the first and second regions of the grounding electrode 120 embedded in the tray body 110, the thickness of each region of the thin film deposited on the substrate supported by the heating plate structure 100 can be specifically controlled, thereby improving the uniformity of the thin film deposited on the substrate surface.

[0060] Furthermore, in some comparative test embodiments, the process parameters of the thin films obtained by the heating plate structure provided by the present invention are compared with those of the existing heating plate structures. The comparison mainly focuses on the structural configuration of the ground electrode in the existing heating plate structure and its corresponding deposition film parameters, as well as the structural configuration of the ground electrode 120 in the heating plate structure 100 of the present invention and its corresponding deposition film parameters.

[0061] Specifically, in some test cases, the average embedment depth of the grounding electrode to the upper surface of the tray body in the existing heating plate structure is kept basically the same as the average embedment depth of the grounding electrode to the upper surface of the tray body in the heating plate structure of the present invention. However, in the existing heating plate structure, the depth difference Δd between the second embedment depth d2 of the second region and the first embedment depth d1 of the first region in the grounding electrode is greater than 0.3 mm, for example, it can be 0.32 mm, 0.41 mm, etc. At this time, the uniformity of the film deposited by the existing heating plate structure is about 1.2%, and cannot be further reduced. Moreover, the difference between the maximum and minimum thickness of the deposited film, i.e., the film thickness range, is also large, for example, in Within the range. In the heating plate structure 100 provided by the present invention, the depth difference Δd between the second embedment depth d2 of the second region and the first embedment depth d1 of the first region in the ground electrode 120 is maintained within 0.3 min. At this time, the uniformity of the film deposited by the heating plate structure 100 is significantly improved, reducing the film uniformity to below 1%, and even to below 0.8%. Furthermore, the thickness variation of the deposited film can also be further reduced.

[0062] Furthermore, the method for calculating the uniformity of the aforementioned thin film may include the following steps: selecting n measurement points in the thin film and obtaining the film thickness x at the n measurement points. n Calculate the standard deviation σ of the film thickness at n measurement points, and the average film thickness at n measurement points. Then, the uniformity calculation formula is used: The uniformity of the thin film can be obtained at n measurement points. In the test example in Figure 6, 49 measurement points were selected to obtain the uniformity (NU%) of the thin film thickness.

[0063] Therefore, based on the seven test examples of the conventional heating plate structure in Figure 6 and the heating plate structure of the present invention, it can be concluded that by controlling the range of the depth difference Δd between the second embedment depth d2 of the second region in the grounding electrode 120 to the upper surface 111 of the tray body 110 and the first embedment depth d1 of the first region, the uniformity of film formation can be improved, the film range can be reduced, and thus the film quality can be improved.

[0064] Those skilled in the art will understand that the above-described scheme, which includes a first region and a second region with two different burial depths for the grounding electrode 120, is merely a non-limiting embodiment provided by the present invention. It is intended to clearly demonstrate the main concept of the invention and provide a specific solution that is easy for the public to implement, rather than to limit the scope of protection of the invention. Optionally, in other embodiments, those skilled in the art can also, based on the concept of the present invention, divide the grounding electrode 120 into multiple different burial depths for multiple regions in the thin film to perform targeted local deposition current adjustment, thereby compensating for the film thickness.

[0065] In summary, the present invention provides a heating plate structure and a semiconductor device that can significantly improve the overall uniformity of thin film deposition.

[0066] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heating plate structure for improving the uniformity of thin films, characterized in that, include: The tray body, located inside the reaction chamber, is used to support the substrate for thin film deposition; as well as A grounding electrode is disposed inside the tray body for discharging radio frequency energy. The grounding electrode includes a first region having a first embedment depth and a second region having a second embedment depth, wherein the second embedment depth is greater than the first embedment depth.

2. The heating plate structure as described in claim 1, characterized in that, The first region is located in the center of the grounding electrode and aligned with the air inlet above the heating plate structure, while the second region is located in the edge region of the grounding electrode and away from the air inlet.

3. The heating plate structure as described in claim 1, characterized in that, The depth difference obtained by subtracting the first burial depth from the second burial depth is less than the first preset depth difference and greater than the second preset depth difference.

4. The heating plate structure as described in claim 3, characterized in that, The first preset depth difference is 0.3mm, and the second preset depth difference is 0.1mm.

5. The heating plate structure as described in claim 1, characterized in that, The grounding electrode includes any one of a first shape with a concave center, a second shape with a convex center, and a third shape with continuous undulations.

6. The heating plate structure as described in claim 5, characterized in that, The grounding electrode is either the first shape or the second shape, and the angle between the edge of the grounding electrode and the upper surface of the tray body is in the range of 30° to 160°.

7. The heating plate structure as described in claim 2, characterized in that, The diameter of the grounding electrode is larger than the diameter of the substrate and smaller than the diameter of the tray body, wherein the distance between the depth variation region of the grounding electrode and the edge of the grounding electrode is 3 to 15 mm.

8. The heating plate structure as described in claim 1, characterized in that, The heating plate structure is applied in a high-frequency electric field with a frequency range of 2MHz to 100MHz, so that the total impedance in the plate body and the embedment depth of the grounding electrode conform to the following rule: Among them, Z total Z represents the total impedance of the heating plate structure. C Indicates capacitive and Z L Indicates the inductive reactance of the loop and Z L =ωL, where ω represents the angular frequency of the alternating current, C is the capacitance, d represents the embedment depth of the grounding electrode, ε represents the dielectric constant of the medium between the grounding electrode and the upper surface of the tray body, S represents the area of ​​the grounding electrode, L is the inductance, and Z L Greater than Z C Z total For a positive value, the greater the burial depth d of the corresponding grounding electrode, the greater the total impedance Z. total The smaller the value, the greater the current in the tray body.

9. A semiconductor device, characterized in that, include: The reaction chamber includes an air inlet at the top for introducing process gases. as well as The heating plate structure as described in any one of claims 1 to 8 is located within the reaction chamber and is used to support the substrate for thin film deposition.

10. The semiconductor device as claimed in claim 9, characterized in that, Also includes: Radio frequency power supply provides high-frequency power signals to the reaction chamber; as well as A power electrode, located at the upper part of the reaction chamber, receives the high-frequency power signal and forms a high-frequency electric field with a frequency range of 2MHz to 100MHz with the ground electrode to ionize the process gas and deposit a thin film on the substrate surface. The heating plate structure is applied in the high-frequency electric field so that the total impedance in the tray body and the embedment depth of the grounding electrode conform to the following rule: Among them, Z total Z represents the total impedance of the heating plate structure. C Indicates capacitive and Z L Indicates the inductive reactance of the loop and Z L =ωL, where ω represents the angular frequency of the alternating current, C is the capacitance, d represents the embedment depth of the grounding electrode, ε represents the dielectric constant of the medium between the grounding electrode and the upper surface of the tray body, S represents the area of ​​the grounding electrode, L is the inductance, and Z L Greater than Z C Z total For a positive value, the greater the burial depth d of the corresponding grounding electrode, the greater the total impedance Z. total The smaller the value, the greater the current in the tray body.

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