Magnetic head device, magnetic head module, memory, electronic device, and preparation method for magnetic head device

By incorporating electrostatic protection structures into the electrical connectors of the magnetic head device, the problem of electrostatic sensitivity in the tunneling layer of the read head is solved, thereby improving the stability and reliability of the magnetic head device and increasing product yield.

WO2026138077A1PCT designated stage Publication Date: 2026-07-02HUAWEI TECH CO LTD +1

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
HUAWEI TECH CO LTD
Filing Date
2025-10-13
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

During the fabrication of magnetic head devices, the tunneling layer of the read head is sensitive to static electricity and is easily damaged, resulting in poor performance stability and reliability, which affects product yield.

Method used

A first electrical connector and a second electrical connector are set in the magnetic head device as electrostatic protection structures. They are prepared by metal coating process to form a same layer or ground structure, so as to realize the electrostatic discharge of the read head and protect the tunneling magnetoresistive film stack.

Benefits of technology

It reduces the risk of failure in the manufacturing process, improves the performance stability and reliability of magnetic head devices, increases product yield, and meets the needs of computing and storage fields.

✦ Generated by Eureka AI based on patent content.

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Abstract

A magnetic head device, a magnetic head module, a memory, an electronic device, and a preparation method for a magnetic head device. The magnetic head device comprises a substrate, a read head, a first electrode, a second electrode, a first electrical connector and a second electrical connector. The magnetic head device comprises a magnetic tape contact surface, and the surface of the read head is exposed at the magnetic tape contact surface. The first electrode and the second electrode are each electrically connected to the read head, one end of the first electrical connector is electrically connected to the first electrode, and a first end face of the other end of the first electrical connector is exposed from the magnetic tape contact surface; and one end of the second electrical connector is electrically connected to the second electrode, and a second end face of the other end of the second electrical connector is exposed from the magnetic tape contact surface.
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Description

Methods for fabricating magnetic head devices, magnetic head modules, memory, electronic devices, and magnetic head devices.

[0001] Cross-reference of related applications

[0002] This application claims priority to Chinese Patent Application No. 202411975331.7, filed on December 26, 2024, with the title “Magnetic Head Device, Magnetic Head Module, Memory, Electronic Device and Method for Manufacturing Magnetic Head Device”, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of electronic equipment technology, and in particular to magnetic head devices, magnetic head modules, memory, electronic equipment, and methods for manufacturing magnetic head devices. Background Technology

[0004] The development of information technology has placed higher demands on storage media. Compared with traditional semiconductor storage technology, magnetic memory with magnetic tunnel junction (MTJ) as storage unit has the advantages of high storage capacity, low cost and long and stable data retention time.

[0005] Magnetic storage devices typically include a head module and a storage medium. The head module includes head devices, which include a data write head device and / or a data read head device. The data write head device is used to record data into the storage medium, while the data read head device is used to read data from the storage medium.

[0006] Both data write head devices and data read head devices contain a read head internally. Specifically, data write head devices include a servo read head, while magnetic head devices include both a servo read head and a data read head. The read head has a first electrode and a second electrode for electrical connection, which are used to establish electrical connection between the read head and external devices.

[0007] During the fabrication of magnetic head devices, static electricity is easily generated during the grinding process. The tunneling layer of the read head is quite sensitive to static electricity, which can easily lead to damage to the tunneling layer of the read head, or result in poor performance stability and reliability of the magnetic head device, resulting in a low product yield. Summary of the Invention

[0008] This application provides a method for fabricating a magnetic head device, a magnetic head module, a memory, an electronic device, and a magnetic head device, so as to realize electrostatic discharge of the read head, reduce the failure risk in the process, improve the yield of mass production, and optimize the performance stability and reliability of the produced magnetic head device, thereby meeting the needs of products in the computing and storage fields for magnetic storage functions.

[0009] In a first aspect, this application provides a magnetic head device. The magnetic head device includes a substrate, a read head, a first electrode, a second electrode, a first electrical connector, and a second electrical connector. The read head, the first electrode, the second electrode, the first electrical connector, and the second electrical connector are disposed on the same side of the substrate, specifically fixed to one side of the substrate by an insulating dielectric filling material. The magnetic head device includes a magnetic tape contact surface, with the surface of the read head exposed on the magnetic tape contact surface. This magnetic tape contact surface is used to contact the surface of the storage medium of the memory, thereby enabling the read head to read information stored in the storage medium. The first electrode and the second electrode are electrically connected to the read head, and one end of the first electrical connector is electrically connected to the first electrode, while the first end face of the other end is exposed on the magnetic tape contact surface; one end of the second electrical connector is electrically connected to the second electrode, while the second end face of the other end is exposed on the magnetic tape contact surface. In this design, the first electrical connector and the second electrical connector form an electrostatic protection structure during the fabrication of the magnetic head device to achieve electrostatic discharge of the read head and protect the tunneling magnetoresistive film stack of the read head. This reduces the risk of failure in the manufacturing process, improves the yield of mass production, and optimizes the performance stability and reliability of the produced magnetic head devices, meeting the needs of computing and storage products for magnetic storage functions.

[0010] In one specific technical solution, the first electrical connector and the second electrical connector are arranged in the same layer. This allows the first and second electrical connectors to be manufactured in the same process, simplifying the fabrication process of the magnetic head device.

[0011] In a further technical solution, the aforementioned magnetic head device also includes a metal interconnect layer for transmitting signals within the magnetic head device. The first electrical connector, the second electrical connector, and the metal interconnect layer are disposed in the same layer. This allows the first and second electrical connectors to be fabricated simultaneously during the fabrication of the metal interconnect layer, and also simplifies the fabrication process of the magnetic head device.

[0012] Specifically, the first and second electrical connectors are fabricated using a metal plating process. This ensures structural stability and reduces the likelihood of damage during clamping, cutting, and grinding processes in the fabrication of the magnetic head device. Furthermore, the low resistivity of both connectors provides excellent protection.

[0013] The magnetic head device in this application can be either a data write head device or a data read head device. Any magnetic head device that includes a read head can adopt the technical solution of this application to protect the read head, reduce the risk of failure during the manufacturing process, improve the performance stability and reliability of the magnetic head device, and meet the magnetic storage function requirements of products in the computing and storage fields.

[0014] Secondly, this application also provides a magnetic head module. The magnetic head module includes a fixing structure, an electrical connector, and the magnetic head device described in the first aspect, wherein the magnetic head device is fixed to the fixing structure, and the electrical connector is electrically connected to the magnetic head device. This magnetic head module has a high yield rate, and its performance stability and reliability can meet the requirements of computing and storage products for magnetic storage functions.

[0015] Thirdly, this application also provides a memory. The memory includes a storage medium and the magnetic head module provided in the second aspect above, wherein the magnetic head device of the magnetic head module is disposed in contact with the storage medium. This solution is beneficial for improving the performance of the memory.

[0016] Fourthly, this application also provides an electronic device. This electronic device includes a housing, electronic components, and a memory provided in the third aspect. The electronic components and the memory are disposed in the housing, and the electronic components are electrically connected to the memory. In this solution, the memory performance of the electronic device is better, which is beneficial to improving the storage performance of the electronic device.

[0017] Fifthly, this application also provides a method for fabricating a magnetic head device. The method includes: fabricating a first electrical connector, a third electrical connector, and a second electrical connector, wherein the first, third, and second electrical connectors are sequentially electrically connected; fabricating a first electrode and a second electrode, wherein the first electrode is electrically connected to the first electrical connector, and the second electrode is electrically connected to the second electrical connector; grinding the magnetic head device down to the magnetic tape contact surface, and removing the third electrical connector. In this scheme, the first and second electrical connectors are electrically connected, causing the first and second electrodes to be short-circuited, thereby forming an electrostatic protection structure for the tunneling magnetoresistive film stack. This improves the product yield, reliability, and stability of the magnetic head device.

[0018] Sixthly, this application also provides a method for fabricating a magnetic head device. The method includes: fabricating a fourth electrical connector and a fifth electrical connector, which are electrically connected to a substrate, respectively; fabricating a first electrical connector and a second electrical connector, whereby the first electrical connector is electrically connected to the fourth electrical connector, and the second electrical connector is electrically connected to the fifth electrical connector; fabricating a first electrode and a second electrode, whereby the first electrode is connected to the first electrical connector, and the second electrode is connected to the second electrical connector; and grinding the magnetic head device down to the magnetic tape contact surface to remove the fourth and fifth electrical connectors. In this scheme, the first and second electrical connectors are grounded, thereby grounding the first and second electrodes, thus forming an electrostatic protection structure for the tunneling magnetoresistive film stack. This improves the product yield, reliability, and stability of the magnetic head device. Attached Figure Description

[0019] Figure 1 is a schematic diagram of an electronic device according to an embodiment of this application;

[0020] Figure 2 is a schematic diagram of a memory structure in an embodiment of this application;

[0021] Figure 3 is a schematic diagram of a magnetic head module in an embodiment of this application;

[0022] Figure 4 is a partial structural schematic diagram of the magnetic head module in an embodiment of this application;

[0023] Figure 5 is a top-down structural diagram of the magnetic head device in an embodiment of this application;

[0024] Figure 6 is a top-down structural diagram of the magnetic head device in an embodiment of this application;

[0025] Figure 7 is a schematic diagram of a side structure of the read head in an embodiment of this application;

[0026] Figure 8 is a circuit diagram of a magnetic head device in an embodiment of this application;

[0027] Figure 9 is a circuit diagram of a magnetic head device in an embodiment of this application;

[0028] Figure 10 is a schematic diagram of a structure during the fabrication process of the magnetic head device in an embodiment of this application;

[0029] Figure 11 is a schematic diagram of a read head preparation process in an embodiment of this application;

[0030] Figure 12 is a schematic diagram of a structure during the fabrication process of the magnetic head device in an embodiment of this application;

[0031] Figure 13 is a schematic diagram of a read head preparation process in an embodiment of this application.

[0032] Reference numerals: 100-Electronic device; 110-Housing; 120-Electronic component; 130-Memory; 131-Storage medium; 132-Magnetic head module; 133-Housing shell; 1-Fixed structural component; 2-Electrical connector; 3-Magnetic head device; 31-Data write head device; 32-Data read head device; 33-Substrate; 34-Read head; 341-First shielding layer; 342-Tunneling magnetoresistive film stack; 343-Second shielding layer; 35-First electrode; 36-Second electrode; 37-First electrical connector; 371-First end face; 38-Second electrical connector; 381-Second end face; 39-Magnetic tape contact surface; 310-Third electrical connector; 311-Data read head; 312-Servo read head; 313-Data write head; 314-Fourth electrical connector; 315 - Fifth electrical connection. Detailed Implementation

[0033] To make the objectives, technical solutions, and advantages of this application clearer, the application will now be described in further detail with reference to the accompanying drawings.

[0034] The terminology used in the following embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. As used in the specification and appended claims of this application, the singular expressions “a,” “an,” “the,” “the,” and “this” are intended to also include expressions such as “one or more,” unless the context clearly indicates otherwise.

[0035] References to “an embodiment” or “a specific embodiment” as used in this specification mean that one or more embodiments of this application include a particular feature, structure, or characteristic described in connection with that embodiment. The terms “comprising,” “including,” “having,” and variations thereof mean “including, but not limited to,” unless otherwise specifically emphasized.

[0036] To facilitate understanding of the magnetic head device, magnetic head module, memory, electronic device, and fabrication method of the magnetic head device provided in the embodiments of this application, their application scenarios will be introduced first below.

[0037] The electronic devices in this application embodiment can be information and communications technology (ICT) devices, computing devices (such as servers), artificial intelligence computing clusters, terminal devices (such as laptops or desktops), or storage devices (such as storage arrays).

[0038] Figure 1 is a schematic diagram of an electronic device according to an embodiment of this application. As shown in Figure 1, in this embodiment, the electronic device 100 includes a housing 110, electronic components 120, and a memory 130. The electronic components 120 and the memory 130 are disposed in the housing 110 and are electrically connected. In a specific embodiment, the electronic components 120 and the memory 130 can be electrically connected via a circuit board, or they can be electrically connected via cables or other means. The electronic device 100 uses the memory 130 to store data. Specifically, the electronic device 100 can be a device mainly used for data storage. The electronic components 120 include devices for reading from the memory 130, or devices for controlling the magnetic head module 132 in the memory 130, etc. In addition, the electronic device 100 can be a computing device, in which case the electronic components 120 can also include computing chips and other devices. These are not listed individually here.

[0039] Figure 2 is a schematic diagram of a memory 130 in an embodiment of this application. As shown in Figure 2, the memory 130 in this embodiment includes a storage medium 131 and a magnetic head module 132. The storage medium 131 is a magnetic storage medium 131, which may have magnetic tracks for storing data information. The magnetic head module 132 is a key component in a magnetoelectric disk that realizes the function of reading and writing data on the magnetic medium based on the tunneling magnetoresistive effect, and determines key characteristics such as data storage density, reading speed, and accuracy. The magnetic head module 132 can be positioned relative to the magnetic tracks to write and / or read data from the storage medium 131. Specifically, the magnetic head module 132 of the memory 130 is in contact with the storage medium 131, and the magnetic head module 132 and the storage medium 131 can move relative to each other to write data to the storage medium 131 or read data from the storage medium 131 using the magnetic head module 132. In a specific embodiment, the relative motion trajectory of the magnetic head module 132 and the storage medium 131 is arc-shaped. For example, the storage medium 131 has a circular structure and can rotate during data writing and / or reading. Alternatively, in another specific embodiment, the relative motion trajectory of the magnetic head module 132 and the storage medium 131 is linear. For example, the storage medium 131 has a square structure and the magnetic head module 132 moves in a straight line relative to the storage medium 131 during data writing and / or reading.

[0040] In some embodiments, the memory 130 may further include a support structure such as a bracket or a housing 133, on which the storage medium 131 and the magnetic head module 132 are mounted. This allows the memory 130 to be integrated into a relatively independent structure, facilitating the transportation and disassembly of the memory 130.

[0041] Specifically, the aforementioned memory 130 can be a magnetic tape or a hard disk drive (HDD). In short, the memory 130 is capable of storing data using a magnetic storage medium 131 and writing and / or storing data using a magnetic head module 132.

[0042] Figure 3 is a schematic diagram of one structure of the magnetic head module 132 in an embodiment of this application, and Figure 4 is a partial schematic diagram of one structure of the magnetic head module 132 in an embodiment of this application. As shown in Figures 3 and 4, in one embodiment, the magnetic head module 132 includes a fixing structure 1, an electrical connector 2, and a data writing head device 31. The data writing head device 31 is fixed to the fixing structure 1, thereby facilitating the installation of the data magnetic head module 132. The electrical connector 2 is electrically connected to the data writing head device 31, thereby facilitating the writing of data to be stored in the memory 130 to the storage medium 131 through the data writing head device 31, so as to realize the data storage of the memory 130.

[0043] In the embodiments shown in Figures 3 and 4, the magnetic head module 132 may further include a data read head device 32, which is also fixed to the fixing structure 1. In a specific embodiment, both the data write head device 31 and the data read head device 32 are elongated devices, and they are arranged in parallel, which simplifies the magnetic head module 132 of the memory 130, improves the miniaturization of the magnetic head module 132, and also helps to improve the miniaturization of the memory 130. The aforementioned data read head device 32 is also electrically connected to the electrical connector 2, thereby facilitating the reading of data from the storage medium 131 of the memory 130.

[0044] In a specific embodiment, the aforementioned electrical connector 2 can be a flexible circuit board. In one embodiment, the electrical connector 2 is electrically connected between the data write head device 31 and the electronic device 120, thereby achieving an electrical connection between the electronic device 120 and the data write head device 31. This allows the electronic device 120 to control the data write head device 31 to write data to the storage medium 131, thus enabling data storage in the memory 130. In another embodiment, the electrical connector 2 is electrically connected between the data read head device 32 and the electronic device 120, thereby achieving an electrical connection between the electronic device 120 and the data read head device 32. This allows the electronic device 120 to control the data read head device 32 to read data from the storage medium 131 of the memory 130, thus enabling data reading from the memory 130.

[0045] In a specific embodiment, the data write head device 31 in the magnetic head module 132 writes data onto the storage medium 131 through the tunneling magnetoresistive effect, and the data read head device 32 reads data from the storage medium 131 through the tunneling magnetoresistive effect. The data write head device 31 of the magnetic head module 132 is in contact with the storage medium 131; specifically, the data write head device 31 is in contact with the magnetic track to control the positive and negative magnetization directions of the magnetic domains. The positive and negative magnetization directions of the magnetic domains characterize the data content, thus enabling data writing. When reading data from the storage medium 131 through the data read head device 32 of the magnetic head module 132 (specifically, the data write head device 31 is in contact with the magnetic track), the positive and negative magnetization directions of the magnetic domains are obtained by the data read head device 32, thereby acquiring the data and achieving data reading.

[0046] The aforementioned data read head device 32 and data write head device 31 can be collectively referred to as magnetic head devices. Therefore, the magnetic head device mentioned in this application embodiment can refer to either data read head device 32 or data write head device 31. Whether it is data read head device 32 or data write head device 31, the magnetic head device includes a read head 34, which refers to data read head 311 and / or servo read head 312. For example, data read head device 32 includes data read head 311 and servo read head 312, and data write head device 31 includes servo read head 312. The key structure in the servo read head 312 is a tunneling magnetoresistance (TMR) film stack 342. Specifically, this TMR film stack 342 can be located between two shielding layers. The TMR film stack 342 is highly susceptible to electrostatic discharge (ESD) breakdown, leading to read head 34 failure. The magnetic head device, magnetic head module, memory, and electronic device provided in this application can solve the problem of the influence of ESD on the TMR film stack 342.

[0047] Figure 5 is a top-view structural diagram of a magnetic head device in an embodiment of this application. The magnetic head device in the embodiment shown in Figure 5 is a data read head device 32, which includes a servo read head 312 and a data read head 311. Both the servo read head 312 and the data read head 311 are read heads 34.

[0048] Figure 6 is a top view of a magnetic head device in an embodiment of this application. The magnetic head device in the embodiment shown in Figure 6 is a data write head device 31, which includes a servo read head 312 and a data write head 313. The servo read head 312 is a read head 34.

[0049] Figure 7 is a side view of the read head 34 in an embodiment of this application. Figures 5 to 7 are cross-sectional views of the magnetic head device. The magnetic head device includes a substrate 33, a read head 34, a first electrode 35, a second electrode 36, a first electrical connector 37, and a second electrical connector 38. The read head 34, the first electrode 35, the second electrode 36, the first electrical connector 37, and the second electrical connector 38 are disposed on the same side of the substrate 33. Specifically, the read head 34, the first electrode 35, the second electrode 36, the first electrical connector 37, and the second electrical connector 38 may be located on an insulating dielectric filling material, such as alumina or silicon oxide. The read head 34 may include a first shielding layer 341, a tunneling magnetoresistance layer, and a second shielding layer 343 arranged sequentially. The magnetic head device includes a tape bearing surface (TBS), and the surface of the read head 34 is exposed on the tape bearing surface 39. The aforementioned magnetic tape contact surface 39 is used to contact the storage medium, thereby facilitating the read head 34 to read the information stored in the storage medium. The aforementioned first electrode 35 and second electrode 36 are electrically connected to the read head 34, specifically, the first electrode 35 can be electrically connected to the first shielding layer 341, and the second electrode 36 can be electrically connected to the second shielding layer 343. One of the aforementioned first electrode 35 and second electrode 36 is the input electrode of the read head 34, and the other electrode is the output electrode of the read head 34. One end of the aforementioned first electrical connector 37 is electrically connected to the first electrode 35, and the first end face 371 of the other end is exposed on the magnetic tape contact surface 39; one end of the second electrical connector 38 is electrically connected to the second electrode 36, and the second end face 381 of the other end is exposed on the magnetic tape contact surface 39. In a specific embodiment, the first electrical connector 37 and the first electrode 35 can be electrically connected through a conductive hole, and the second electrical connector 38 and the second electrode 36 can be electrically connected through a conductive hole. In this design, the first electrical connector 37 and the second electrical connector 38 form an electrostatic protection structure during the fabrication of the magnetic head device, thereby achieving electrostatic discharge of the read head 34 and protecting the tunneling magnetoresistive film stack 342 of the read head 34. This reduces the failure risk in the fabrication process of the magnetic head device, improves the yield of mass production, and optimizes the performance stability and reliability of the produced magnetic head device, meeting the requirements of computing and storage products for magnetic storage functions.

[0050] Figure 8 is a circuit diagram of a magnetic head device in an embodiment of this application. Referring to Figure 8, in the fabrication process of the magnetic head device provided in this embodiment, the first electrical connector 37 and the second electrical connector 38 can be electrically connected, thereby connecting the first electrode 35 and the second electrode 36 to form a short-circuit structure, forming an electrostatic protection structure for the tunneling magnetoresistive film stack 342. During the grinding process in the fabrication of the magnetic head device, the aforementioned first electrical connector 37 and the second electrical connector 38 can be used for electrostatic discharge (ESD). When grinding is finally performed to the magnetic tape contact surface 39, the third electrical connector 310 connected between the first electrical connector 37 and the second electrical connector 38 is removed. This does not affect the operation of the first electrode 35 and the second electrode 36, and the electrostatic protection structure occupies less space in the magnetic head device.

[0051] Specifically, the third electrical connector 310 is located on the side of the magnetic tape contact surface 39 away from the first electrode 35, so that the third electrical connector 310 can be removed when grinding the magnetic head device without additional processing, which helps to simplify the manufacturing process of the magnetic head device.

[0052] Figure 9 is a circuit diagram of a magnetic head device in an embodiment of this application. Referring to Figure 9, in the fabrication process of the magnetic head device provided in this embodiment, the first electrical connector 37 and the second electrical connector 38 can be grounded respectively, thereby forming an electrostatic protection structure for the tunneling magnetoresistive film stack 342. During the grinding process in the fabrication of the magnetic head device, the grounded first electrical connector 37, the second electrical connector, and the third connector can be used for electrostatic discharge (ESD). When grinding is finally performed to the magnetic tape contact surface 39, the structure connecting the first electrical connector 37 and the second electrical connector 38 to ground is removed. This does not affect the operation of the first electrode 35 and the second electrode 36, and the electrostatic protection structure occupies less space in the magnetic head device.

[0053] Please continue to refer to Figure 7. In one embodiment, the first electrical connector 37 and the second electrical connector 38 are arranged in the same layer, so that the first electrical connector 37 and the second electrical connector 38 can be manufactured in the same process, which simplifies the manufacturing process of the magnetic head device.

[0054] In a specific embodiment, the first electrical connector 37 and the second electrical connector 38 can be prepared using a metal coating process. This ensures that the structure of the first electrical connector 37 and the second electrical connector 38 is relatively stable and less prone to damage during the clamping, cutting, and grinding processes in the fabrication of the magnetic head device. Furthermore, it allows the first electrical connector 37 and the second electrical connector 38 to have low resistivity, thus providing better protection.

[0055] In a specific embodiment, the first electrode 35, the second electrode 36, the first electrical connector 37, and the second electrical connector 38 can be conductive interconnect metal materials including at least one metal such as gold or copper.

[0056] In some embodiments, the first electrical connector 37 and the second electrical connector 38 may also be other conductive structures such as conductive adhesive, as long as they can conduct electricity.

[0057] Furthermore, the aforementioned magnetic head device may also include a metal interconnect layer for transmitting signals within the magnetic head device. The first electrical connector 37, the second electrical connector 38, and the metal interconnect layer are disposed in the same layer. This allows the first electrical connector 37 and the second electrical connector 38 to be fabricated simultaneously with the metal interconnect layer, which also simplifies the fabrication process of the magnetic head device.

[0058] Based on the same inventive concept, this application also provides a method for manufacturing the above-mentioned magnetic head device. Figure 10 is a schematic diagram of a structure during the manufacturing process of the magnetic head device in an embodiment of this application, and Figure 11 is a schematic diagram of a structure during the manufacturing process of the read head 34 in an embodiment of this application. As shown in Figures 10 and 11, a manufacturing method includes:

[0059] Step S101: Prepare the first electrical connector 37, the third electrical connector 310, and the second electrical connector 38, wherein the first electrical connector 37, the third electrical connector 310, and the second electrical connector 38 are electrically connected in sequence.

[0060] In one specific embodiment, step S101 may include: fabricating a metal interconnect layer, a first electrical connector 37, a third electrical connector 310, and a second electrical connector 38, wherein the first electrical connector 37, the third electrical connector 310, and the second electrical connector 38 are electrically connected sequentially. In this scheme, the metal interconnect layer, the first electrical connector 37, the third electrical connector 310, and the second electrical connector 38 can be disposed in the same layer. The first electrical connector 37, the third electrical connector 310, and the second electrical connector 38 can be fabricated simultaneously with the metal interconnect layer of the magnetic head device, thus eliminating the need for additional steps in fabricating the first electrical connector 37, the third electrical connector 310, and the second electrical connector 38, which simplifies the fabrication method of the magnetic head device.

[0061] Step S102: Prepare the first electrode 35 and the second electrode 36. The first electrode 35 is electrically connected to the first electrical connector 37, and the second electrode 36 is electrically connected to the second electrical connector 38.

[0062] Specifically, one end of the first electrical connector 37 is electrically connected to the first electrode 35, and the other end is electrically connected to the third electrical connector 310; one end of the second electrical connector 38 is electrically connected to the second electrode 36, and the other end is electrically connected to the third electrical connector 310. This causes the first electrode 35 and the second electrode 36 to be short-circuited, forming an electrostatic protection structure for the tunneling magnetoresistive film stack 342.

[0063] In one specific embodiment, the first electrical connector 37 and the first electrode 35 can be electrically connected through a conductive hole, and the second electrical connector 38 and the second electrode 36 can be electrically connected through a conductive hole.

[0064] Step S103: Grind the magnetic head device to the magnetic tape contact surface 39 and remove the third electrical connector 310.

[0065] After the third electrical connector 310 is removed, the first electrical connector 37 and the second electrical connector 38 are disconnected, thus not affecting the operation of the first electrode 35 and the second electrode 36, and the electrostatic protection structure occupies less space in the magnetic head device. In addition, this embodiment does not require an additional process to remove the third electrical connector 310, which helps to simplify the manufacturing process of the magnetic head device.

[0066] In this embodiment, by improving the wafer fabrication process of the magnetic head, an equipotential protection structure is added to the metal interconnect layer of the device without increasing the difficulty and steps of the process. Furthermore, this protection structure can be partially removed in the normal back-end process without affecting the performance testing of the device, reducing the failure risk in the process, improving the yield of mass production, and optimizing the performance stability and reliability of the produced magnetic head device, thus meeting the needs of products in the computing and storage fields for magnetic storage functions.

[0067] Based on the same inventive concept, this application also provides a method for manufacturing the above-mentioned magnetic head device. Figure 12 is a schematic diagram of a structure during the manufacturing process of the magnetic head device in an embodiment of this application, and Figure 13 is a schematic diagram of a structure during the manufacturing process of the read head 34 in an embodiment of this application. As shown in Figures 12 and 13, a manufacturing method includes:

[0068] Step S201: Prepare the fourth electrical connector 314 and the fifth electrical connector 315, and electrically connect the fourth electrical connector 314 and the fifth electrical connector 315 to the substrate 33 respectively;

[0069] In one specific embodiment, the fourth electrical connector 314 and the fifth electrical connector 315 may each include conductive holes to facilitate the connection of the first electrical connector 37 and the substrate 33, as well as the second electrical connector 38 and the substrate 33, in the height direction.

[0070] Step S202: Prepare the first electrical connector 37 and the second electrical connector 38. The first electrical connector 37 is electrically connected to the fourth electrical connector 314, and the second electrical connector 38 is electrically connected to the fifth electrical connector 315.

[0071] In one specific embodiment, step S202 may include: fabricating a metal interconnect layer, a first electrical connector 37, and a second electrical connector 38, wherein the first electrical connector 37 is electrically connected to a fourth electrical connector 314, and the second electrical connector 38 is electrically connected to a fifth electrical connector 315. In this scheme, the metal interconnect layer, the first electrical connector 37, the third electrical connector 310, and the second electrical connector 38 can be disposed in the same layer. The first electrical connector 37, the third electrical connector 310, and the second electrical connector 38 can be fabricated simultaneously with the fabrication of the metal interconnect layer of the magnetic head device, thus eliminating the need for additional steps in fabricating the first electrical connector 37, the third electrical connector 310, and the second electrical connector 38, thereby simplifying the fabrication method of the magnetic head device.

[0072] The first electrical connector 37 is electrically connected to the substrate 33 via the fourth electrical connector 314, thereby grounding the first electrical connector 37. The second electrical connector 38 is electrically connected to the substrate 33 via the fifth electrical connector 315, thereby grounding the second electrical connector 38.

[0073] Step S203: Prepare the first electrode 35 and the second electrode 36. The first electrode 35 is connected to the first electrical connector 37, and the second electrode 36 is connected to the second electrical connector 38.

[0074] Specifically, one end of the first electrical connector 37 is electrically connected to the first electrode 35, and the other end is electrically connected to the substrate 33; one end of the second electrical connector 38 is electrically connected to the second electrode 36, and the other end is electrically connected to the substrate 33. This allows the first electrode 35 and the second electrode 36 to be grounded respectively, forming an electrostatic protection structure for the tunneling magnetoresistive film stack 342.

[0075] Step S204: Grind the magnetic head device to the magnetic tape contact surface 39, and remove the fourth electrical connector 314 and the fifth electrical connector 315.

[0076] After the fourth electrical connector 314 and the fifth electrical connector 315 are removed, the first electrical connector 37 and the second electrical connector 38 are disconnected from ground, thus not affecting the operation of the first electrode 35 and the second electrode 36, and the electrostatic protection structure occupies less space in the magnetic head device. Furthermore, this embodiment does not require an additional process to remove the fourth electrical connector 314 and the fifth electrical connector 315, which simplifies the fabrication process of the magnetic head device.

[0077] In this embodiment, by improving the wafer fabrication process of the magnetic head, an equipotential protection structure is added to the metal interconnect layer of the device without increasing the difficulty and steps of the process. Furthermore, this protection structure can be partially removed in the normal back-end process without affecting the performance testing of the device, reducing the failure risk in the process, improving the yield of mass production, and optimizing the performance stability and reliability of the produced magnetic head device, thus meeting the needs of products in the computing and storage fields for magnetic storage functions.

[0078] It is worth noting that, in the embodiments of this application, except for the parallel embodiments which cannot be combined, the technical features of different embodiments can be combined to form new embodiments; or, in other words, the various technical features provided in the embodiments of this application, whether described in the same embodiment or not, can be combined as long as they are not mutually contradictory or parallel.

[0079] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A magnetic head device, characterized in that, The device includes a substrate, a read head, a first electrode, a second electrode, a first electrical connector, and a second electrical connector. The read head, the first electrode, the second electrode, the first electrical connector, and the second electrical connector are disposed on the same side of the substrate. The magnetic head device includes a magnetic tape contact surface, and the surface of the read head is exposed on the magnetic tape contact surface; the first electrode and the second electrode are respectively electrically connected to the read head; one end of the first electrical connector is electrically connected to the first electrode, and the first end face of the other end is exposed on the magnetic tape contact surface; one end of the second electrical connector is electrically connected to the second electrode, and the second end face of the other end is exposed on the magnetic tape contact surface.

2. The magnetic head device as described in claim 1, characterized in that, The first electrical connector and the second electrical connector are disposed on the same layer.

3. The magnetic head device as described in claim 1 or 2, characterized in that, It also includes a metal interconnect layer, wherein the first electrical connector, the second electrical connector, and the metal interconnect layer are disposed in the same layer.

4. The magnetic head device according to any one of claims 1 to 3, characterized in that, The first electrical connector and the second electrical connector are manufactured using a metal plating process.

5. The magnetic head device according to any one of claims 1 to 4, characterized in that, The magnetic head device is either a data write head device or a data read head device.

6. A magnetic head module, characterized in that, It includes a fixing structure, an electrical connector, and a magnetic head device as described in any one of claims 1 to 5, wherein the magnetic head device is fixed to the fixing structure, and the electrical connector is electrically connected to the magnetic head device.

7. A memory, characterized in that, It includes a storage medium and a magnetic head module as described in claim 6, wherein the magnetic head device of the magnetic head module is disposed in contact with the storage medium.

8. An electronic device, characterized in that, It includes a housing, electronic components, and a memory as described in claim 7, wherein the electronic components and the memory are disposed in the housing, and the electronic components are electrically connected to the memory.

9. A method for manufacturing a magnetic head device, characterized in that, include: A first electrical connector, a third electrical connector, and a second electrical connector are prepared, wherein the first electrical connector, the third electrical connector, and the second electrical connector are electrically connected sequentially. A first electrode and a second electrode are prepared, wherein the first electrode is electrically connected to the first electrical connector, and the second electrode is electrically connected to the second electrical connector; Grind the magnetic head assembly down to the magnetic tape contact surface to remove the third electrical connector.

10. A method for manufacturing a magnetic head device, characterized in that, include: A fourth electrical connector and a fifth electrical connector are fabricated, wherein the fourth electrical connector and the fifth electrical connector are respectively electrically connected to a substrate; A first electrical connector and a second electrical connector are prepared, wherein the first electrical connector is electrically connected to a fourth electrical connector, and the second electrical connector is electrically connected to a fifth electrical connector; A first electrode and a second electrode are prepared, wherein the first electrode is connected to the first electrical connector, and the second electrode is connected to the second electrical connector; Grind the magnetic head assembly down to the magnetic tape contact surface to remove the fourth and fifth electrical connectors.