In-feed assemblies and methods for chemical vapor processing reactors

Abstract

In-feed part for a chemical vapor processing reactor, chemical vapor processor having such an in-feed part and methods of operating the same. The in-feed part defining an expansion space which is configured to lead reactants as a top to bottom flow from a plasma source through a reaction chamber, the in-feed part having: a body comprising an opening at a bottom end configured to be placed proximate a reaction bowl of the reaction chamber, the side of the body comprising at least one gas inlet for receiving at least one of a: a carrier gas and a precursor; a mixing channel arranged within or adjacent to the body such that the at least one gas inlet is in fluid connection with the mixing channel, the side of the mixing channel comprising a nozzle fluidly connecting the mixing channel with the expansion space.

Description

[0001] IN-FEED ASSEMBLIES AND METHODS FOR CHEMICAL VAPOR PROCESSING REACTORS

[0002] TECHNICAL FIELD

[0003] The present disclosure generally relates to in-feed assemblies for chemical vapor processing reactors, such as deposition reactors with a plasma source, for example Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) reactors, and associated methods.

[0004] BACKGROUND

[0005] This section illustrates useful background information without admission of any technique described herein representative of the state of the art.

[0006] While there are various in-feed assemblies and assembly geometries for chemical vapor processing, such as CVD and ALD, reactors, many rely on precursor or gas inlets located near the substrate which result in uneven deposition patterns. These uneven deposition patterns may be exhibited by a prominent signature of the precursor inlet(s) due to gas delivery being concentrated around the inlet(s). Further, with current inlet configurations, convection-driven mixing, for example of precursor and carrier gases, is typically incomplete. Such incomplete mixing exacerbates uneven depositions issues.

[0007] Further, in applications employing remote plasma technology / techniques, for example in situations where it is desirable to avoid damage by plasma radicals, a method of delivery of the plasma radicals to the precursors is needed. Optimization of such delivery mechanisms is currently lacking and can result in uneven deposition / processing.

[0008] Chemical vapor processing methods benefit from uniform partial pressure distribution of the precursor over the substrate surface to reach uniform film thicknesses, especially over large area substrates. In addition, ALD method benefits from fast gas switching times in the reactor and accurately controlled surface temperatures of the flow channel surfaces upstream the substrate.Therefore, there is an ongoing need to develop improved designs for in-feed assembly injection geometries which provide for at least one of: more uniform partial pressure, fast gas switching times, improved gas delivery and mixing without significantly reducing flow conductance in the chamber, improved precursor consumption on the wafer and reduced particle formation.

[0009] SUMMARY

[0010] The present disclosure aims to provide an improved injection geometry for in-feed assemblies used in chemical vapor processing reactors, such as ALD and CVD reactors, to improve the operation of reactors using said geometry, or to provide an alternative to existing technology. For example, embodiments provide for: more effective gas mixing, improved precursor utilization, improved precursor distribution, increased wafer uniformity, and / or reduced gas purge times. In-feed assemblies according to embodiments described herein solve the issues raised in the background section.

[0011] Additionally, embodiments of the present invention provide for improved, if not optimized, delivery of plasma radicals in remote plasma applications. Delivery mechanisms as described in embodiments disclosed herein provide for direction of remote plasma while ensuring little to no damage is caused by the ion bombardment, favoring plasma radicals react on the substrate service. At the same time, delivery of plasma radicals to the precursor is provided in an optimal fashion. In embodiments described herein, plasma distance is optimized while at the same time a volume of the reaction space is minimized in order to provide for high throughput while ensuring a minimal damage by ion bombardment.

[0012] Embodiments as described herein provide for a mixing channel, sometimes an annular mixing channel, configured to receive gases from gas inlets and then provide those gases to a reaction space via nozzles of the mixing channel. Mixing channels according to embodiments ensure better mixing of precursor and carrier gases at low flow conditions. Certain mixing channels help ensure better precursor containment.

[0013] Embodiments as described herein provide for streamlined vertical gas delivery to a substrate, with mixing channel to improve gas mixing and improved precursor utilization. Further, embodiments described here are compatible with Plasma-Enhanced Atomic Layer Deposition (PEALD), including remote plasma configurations, without the need of movingparts above a substrate target. Without moving parts, fewer mechanical particles are introduced. Certain embodiments of the present disclosure aim to improve uniformity of film deposition onto substrate surfaces, particularly during single wafer deposition.

[0014] The appended claims define the scope of protection. Any examples and technical descriptions of apparatuses, products and / or methods in the description and / or drawings not covered by the claims are presented not as embodiments of the invention but as background art or examples useful for understanding the invention.

[0015] According to a first example aspect there is provided an in-feed part for a chemical vapor processing reactor, the in-feed part defining an expansion space which is configured to lead reactants as a top to bottom flow from a plasma source through a reaction chamber, the in-feed part comprising:

[0016] a body comprising an opening at a bottom end configured to be placed proximate a reaction bowl of the reaction chamber, the side of the body comprising at least one gas inlet for receiving at least one of a: a carrier gas and a precursor;

[0017] a mixing channel arranged within or adjacent to the body such that the at least one gas inlet is in fluid connection with the mixing channel, the side of the mixing channel comprising a nozzle fluidly connecting the mixing channel with the expansion space.

[0018] In at least some embodiments the expansion space widens towards the reaction bowl.

[0019] In certain embodiments the body further comprises an opening at a top end for receiving at least one of a plasma, etch gas, or carrier gas.

[0020] At least some embodiments provide for a mixing channel that is annular. In certain embodiments the side of the body comprises at least three gas inlets in fluid connection with the mixing channel. According to some embodiments, the gas inlet(s) is / are configured to inject gas into the mixing channel at an angle other than normal to the side of the body.

[0021] In certain embodiments the side of the mixing channel comprises at least two nozzles fluidly connecting the mixing channel with the expansion space. In some embodiments, the nozzle(s) and gas inlet(s) are not arranged along the same radial relative to the center of the expansion space. In certain embodiments the nozzle(s) are configured to inject gas into the expansion space towards the opening at the bottom end. In some embodiments, the nozzle(s) have a center line which is angled at least 3 degrees, preferably 5 degrees,towards the opening at the bottom end. In at least some embodiments the nozzle(s) have a diameter of at least 3 mm, preferably 5mm.

[0022] According to certain embodiments, in-feed part is configured to deform in the direction of the top to bottom flow. In some embodiments the in-feed part comprises a set of nested sub-parts or ring-like members movable to fit within each other. In certain embodiments the in-feed part comprises a tubular shape configured to be positioned above the reaction bowl, for example, a tubular shape comprising a curved wall, such as a trumpet or bell-shaped wall.

[0023] In at least some embodiments the reaction bowl comprises a substrate holder for receiving a substrate.

[0024] According to a second example aspect there is provided a chemical vapor processing reactor, such as a deposition reactor, comprising:

[0025] the in-feed part of an embodiment described herein;

[0026] a reaction bowl arranged below the in-feed part; and

[0027] a lifting mechanism for loading at least one substrate to the substrate holder within a reaction chamber at least partially formed by the reaction bowl and in-feed part, the chemical vapor processing reactor being configured to deposit material on said at least one substrate in the reaction chamber by sequential self-saturating surface reactions.

[0028] According to at least some embodiments, the lifting mechanism is configured to change the dimensions of the in-feed part.

[0029] In certain embodiments, the in-feed part has a contracted shape and an extended shape, and the lifting mechanism is configured to push or pull the in-feed part from the extended shape to the contracted shape allowing said loading of said at least one substrate when said in-feed part is in its contracted shape. In at least some embodiments, the in-feed part is attached to an expansion space flange which in turn is fitted against a top flange of the reaction chamber during deposition. In certain embodiments the lifting mechanism is configured to lift at least a portion of the in-feed part away from the reaction bowl.

[0030] According to a third example aspect there is provided a method comprising: operating the chemical vapor processing reactor according to the second example aspect.Different non-binding example aspects and embodiments have been illustrated in the foregoing. The embodiments in the foregoing are used merely to explain selected aspects or steps that may be utilized in different implementations. Some embodiments may be presented only with reference to certain example aspects. It should be appreciated that corresponding embodiments may apply to other example aspects as well.

[0031] BRIEF DESCRIPTION OF THE FIGURES

[0032] Some example embodiments will be described with reference to the accompanying figures, in which:

[0033] Figure 1A shows a schematical cross section at a vertical center axis of a portion of a chemical vapor processing reactor according to certain embodiments;

[0034] Figure 1B is a schematical cross section taken along line B of an embodiment like that of Figure 1A;

[0035] Figure 2A shows a schematical cross section at a vertical center axis of a portion of a chemical vapor processing reactor according to certain embodiments;

[0036] Figure 2B is a detailed view of the area denoted by dashed line box B in Figure 2A;

[0037] Figure 20 is a schematical cross section taken along line C of an embodiment like that of Figure 2A;

[0038] Figure 3A and 3B show schematical cross sections of an in-feed part or portion thereof according to at least some embodiments;

[0039] Figures 4A and 4B show a mass fraction of a given deposition using single inlet introduction (3A) and introduction using a mixing channel as described herein (3B);

[0040] Figures 5A and 5B show schematics of a chemical vapor reactor capable of employing in-feed parts according to certain embodiments;

[0041] Figures 6A and 6B show a chemical vapor reactor, schematically, which is capable of supporting in-feed parts according to some embodiments;Figures 7A and 7B show general shaping of in-feed parts or portions thereof according to embodiments;

[0042] Figures 7C and 7D show different arrangements of inlets according to certain embodiments;

[0043] Figures 8A and 8B show rings according to certain embodiments;

[0044] Figure 9 illustrates a block diagram of a control system employed in certain embodiments: and

[0045] Figure 10 shows a block diagram of a control unit in accordance with certain embodiments.

[0046] DETAILED DESCRIPTION

[0047] The basics of an atomic layer deposition, ALD, growth mechanism are known to a skilled person. ALD is a special chemical deposition method based on sequential introduction of at least two reactive precursor species to at least one substrate. A basic ALD deposition cycle, consists of four sequential steps: pulse A, purge A, pulse B and purge B. Pulse A consists of a first precursor vapor and pulse B of another precursor vapor. Inactive gas and a vacuum pump are typically used for purging gaseous reaction by-products and the residual reactant molecules from the reaction space during purge A and purge B. A deposition sequence comprises at least one deposition cycle. Deposition cycles are repeated until the deposition sequence has produced a thin film or coating of desired thickness. Deposition cycles can also be either simpler or more complex. For example, the cycles can include three or more reactant vapor pulses separated by purging steps, or certain purge steps can be omitted. Or, as for plasma-assisted ALD, for example PEALD (plasma-enhanced atomic layer deposition), or for photon-assisted ALD, one or more of the deposition steps can be assisted by providing required additional energy for surface reactions through plasma or photon in-feed, respectively. Accordingly, the pulse and purge sequence may be different depending on each particular case. The deposition cycles form a timed deposition sequence that is controlled by at least one processor. Thin films grown by ALD are dense, pinhole free and have uniform thickness.

[0048] As for substrate processing steps, the at least one substrate is typically exposed to temporally separated precursor pulses in a reaction vessel (or chamber) to deposit material on the substrate surfaces by sequential self-limiting surface reactions. In the context of thisapplication, the term ALD comprises all applicable ALD based techniques and any equivalent or closely related technologies, such as, for example the following ALD subtypes: MLD (Molecular Layer Deposition), plasma-assisted ALD, for example PEALD (Plasma Enhanced Atomic Layer Deposition) and photon-assisted or photon-enhanced Atomic Layer Deposition (known also as flash enhanced ALD or photo-ALD).

[0049] In ALD, at least one substrate is typically exposed to temporally separated precursor pulses in a reaction vessel to deposit material on the substrate surfaces by sequential selfsaturating surface reactions. In the context of this application, the term ALD comprises all applicable ALD based techniques and any equivalent or closely related technologies, such as, for example the following ALD sub-types: MLD (Molecular Layer Deposition) plasma-assisted ALD, for example PEALD (Plasma Enhanced Atomic Layer Deposition) and photon-enhanced Atomic Layer Deposition (known also as flash enhanced ALD).

[0050] The basics of a chemical vapor deposition, CVD are known to a skilled person. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and / or decompose on the substrate surface to produce the desired deposit. Frequently, volatile byproducts are also produced, which are removed by gas flow through the reaction chamber. By varying experimental conditions, including substrate material, substrate temperature, and composition of the reaction gas mixture, total pressure gas flows, etc., materials with a wide range of physical, tribological, and chemical properties can be grown. CVD and related processes are employed in many thin film applications, including dielectrics, conductors, passivation layers, oxidation barriers, conductive oxides, tribological and corrosion-resistant coatings, heat-resistant coatings, and epitaxial layers for microelectronics.

[0051] An in-feed part, or assembly, 101 fora chemical vapor processing reactor is shown in Figure 1A. The in-feed part 101 defines an expansion space 105 which is configured to lead reactants as a top to bottom flow from a plasma source through a reaction chamber 150. In at least some embodiments the plasma source is a remote plasma source. The plasma source is not illustrated within Figure 1A, but could be, for example, connected to an inlet, or opening, 122 at the top end of the in-feed part. As seen, the in-feed part 101 comprises: a body 110 comprising an opening 121 at a bottom end. As can be seen, when in use, the opening at the bottom end 121 is configured to be placed proximate a reaction bowl 150 of the reaction chamber and thus the deposition target or substrate 155. In at least some embodiments the in-feed part is considered a portion of the reaction chamber. The reaction chamber further comprises an exhaust 152. The side of the body 110 comprises at least one gas inlet 131 for receiving at least one of a carrier gas and a precursor.Figure 1A further illustrates that, within certain embodiments, the body of the in-feed part further comprises an opening 122 at a top end for receiving at least one of a plasma and an etch gas.

[0052] Figure 1 B is a cross section taken along line B of an embodiment like Figure 1 A. As can be seen in Figure 1B, within at least some embodiments, the side of the mixing channel 135 comprises at least two nozzles 133 fluidly connecting the mixing channel 135 with the expansion space 105. Within some embodiments there is only a single nozzle 133. In embodiments comprising two nozzles, the nozzles are placed 45 to 135 degrees from the gas inlet, preferably 75 to 105 degrees, most preferably 90 degrees. In at least some embodiments, such as the one shown in Figure 1B, the nozzles are located opposite each other. In certain embodiments the nozzles are placed equally spaced from the gas inlet(s). In some embodiments the nozzles are placed between sets of inlets, for example, as shown in Figure 1B, the nozzles may be placed between the inlets on the right and the inlets on the left as shown in the figure.

[0053] As can also be seen within Figure 1B, within at least some embodiments, the nozzle(s) 133 and gas inlet(s) 131 are not arranged along the same radial relative to the center of the expansion space. Within at least some embodiments, no line drawn from the center of the in-feed part outward will intersect both a nozzle and a gas inlet. In certain embodiments no nozzle is in line with an inlet. In some embodiments, a center line of an inlet extending towards the expansion space does not intersect a nozzle before encountering the expansion space. In certain embodiments, no center line of an inlet extending towards the expansion space intersects a nozzle before encountering the expansion space. In at least some embodiments, the nozzles are arranged opposite each other, one such example being illustrated in Figure 1B. Such opposed nozzles facilitate increased gas jet interaction, improving convective mixing and increasing uniformity of deposition.

[0054] Within certain embodiments the expansion space 105 is referred to as a reaction space. In at least some embodiments the reaction space is the space within the reaction chamber 150 and the expansion space is the space within the in-feed part. However, as can be appreciated, when the in-feed part 101 and reaction chamber 150 are connected, the reaction space and expansion space may form a continuous space.

[0055] As seen in Figure 1, the mixing channel 135 and associated nozzles 133 and inlets 131, known as a ring in certain embodiments, form at least a portion of the reaction space in certain embodiments. This ring may be formed as an integral part of the reaction space. Inat least some embodiments the reaction bowl 150 and expansion space 105 are two separate elements and the ring is formed as an integral part of either the bowl 150 or expansion space 105. In at least some embodiments the ring is formed as a separate component.

[0056] As seen, within some embodiments the mixing channel is arranged proximate to the opening at the bottom end. In certain embodiments the mixing channel is arranged closer to the opening at the bottom end of the in-feed part than the top end of the in-feed part or opening at the top end of the in-feed part. In some embodiments, the mixing channel is located in the bottom half of the in-feed part, that is the half configured to be placed closest to the reaction chamber.

[0057] In at least some embodiments the in-feed part comprises a flange of the body which is configured to mate with a corresponding portion of the reaction chamber. In certain embodiments the in-feed line and reaction chamber are configured to mate with a vacuum tight seal.

[0058] An in-feed part, or assembly, 201 fora chemical vapor processing reactor is shown in Figure 2A. The in-feed part 201 defines an expansion space 205 which is configured to lead reactants as a top to bottom flow from a plasma source through a reaction chamber 250. In at least some embodiments the plasma source is a remote plasma source. The plasma source is not illustrated within Figure 2A, but could be, for example, connected to an inlet, or opening, 222 at the top end of the in-feed part. As seen, the in-feed part 201 comprises: a body 210 comprising an opening 221 at a bottom end. As can be seen, when in use, the opening at the bottom end 221 is configured to be placed proximate a reaction bowl 250 of the reaction chamber and thus the deposition target or substrate 255. In at least some embodiments the in-feed part is considered a portion of the reaction chamber. The reaction chamber further comprises an exhaust 252. The side of the body 210 comprises at least one gas inlet 231 for receiving at least one of a carrier gas and a precursor.

[0059] Figure 2A further illustrates that, within certain embodiments, the body of the in-feed part further comprises an opening 222 at a top end for receiving at least one of a plasma and an etch gas.

[0060] Figure 2B is a detailed view of the area denoted by dashed line box B in Figure 2A. As seen in Figure 2B, the in-feed part 201 further comprises a mixing channel 235 arranged within or adjacent to the body 210 such that the at least one gas inlet 231 is in fluid connection with the mixing channel 235, the side of the mixing channel comprising a nozzle 233 fluidlyconnecting the mixing channel 235 with the expansion space 205. As seen in Figure 2B, at least some embodiments comprise two nozzles 233. Certain embodiments have only one nozzle 233. The mixing channel enables better precursor mixing, for example with a carrier gas. The mixing channel also provides for directed flow delivery via the nozzle(s) as will be discussed below.

[0061] While the term mixing channel is used herein, mixing of different gases is not required in all embodiments. For example, a single precursor may be provided via one or more gas inlets. Within at least some embodiments the mixing channel has an annular shape. For example, as seen in Figures 2A -2C. Within certain embodiments the mixing channel is in the shape of an annular sector or arc, that is, it does not extend all the way around the body of the in-feed part as a continuous channel. Within at least some embodiments, the in-feed part comprises a plurality of mixing channels, each with at least one gas inlet and at least one nozzle. In certain embodiments the mixing channel is referred to as a liner channel. At least some embodiments employ a separate liner inside the in-feed part.

[0062] As can be seen in Figures 2A - 2C, within at least some embodiments the body is cylindrical. For example, the body may be a tapered cylinder as shown. Within at least some embodiments, the expansion space widens towards the reaction chamber. For example as seen in Figures 2A - 2C.

[0063] In at least some embodiments, the mixing channel is a portion of the reaction chamber, for example a portion of the reaction bowl. In certain embodiments the mixing channel is a portion of the in-feed part, for example a removable or detachable portion of the in-feed part. In at least some embodiments the mixing channel is a detachable portion of the reaction chamber, or a piece affixed to the reaction chamber. The mixing channel still forms at least a portion of the in-feed part but may separate from the other portions of the in-feed part at times, for example during loading of a substrate. For example, the mixing channel may be affixed to the reaction chamber via a flanged system. Examples of the relative location and arrangement of the mixing channel are provided herein, for example as seen in Figures 7B - 7E.

[0064] Figure 2C is a cross section taken along line C of an embodiment like Figure 2A. As can be seen in Figure 2C, within at least some embodiments, the side of the mixing channel 235 comprises at least two nozzles 233 fluidly connecting the mixing channel 235 with the expansion space 205. Within certain embodiments the expansion space 205 is referred to as a reaction space. In at least some embodiments the reaction space is the space withinthe reaction chamber 250 and the expansion space is the space within the in-feed part. However, as can be appreciated, when the in-feed part 201 and reaction chamber 250 are connected, the reaction space and expansion space may form a continuous space.

[0065] As can also be seen within Figure 2C, within at least some embodiments, the nozzle(s) 233 and gas inlet(s) 231 are not arranged along the same radial relative to the center of the expansion space. Within at least some embodiments, no line drawn from the center of the in-feed part outward will intersect both a nozzle and a gas inlet. In certain embodiments no nozzle is in line with an inlet. In some embodiments, a center line of an inlet extending towards the expansion space does not intersect a nozzle before encountering the expansion space. In certain embodiments, no center line of an inlet extending towards the expansion space intersects a nozzle before encountering the expansion space. In at least some embodiments, the nozzles are arranged opposite each other, one such example being illustrated in Figure 2C. Such opposed nozzles facilitate increased gas jet interaction, improving convective mixing and increasing uniformity of deposition.

[0066] In at least some embodiments, the side of the body comprises at least three gas inlets in fluid connection with the mixing channel. The use of a plurality of gas inlets provides for greater mixing within the channel. For example, convective mixing in the mixing channel can result in a significant decrease in non-uniformity of a deposited layer. This convective mixing is increased when a plurality of gas inlets is employed. With three gas inlets providing for a significant decrease in non-uniformity of deposited layers.

[0067] Embodiments of the present invention provide for a marked increase in uniformity in deposited layers. Figures 4A and 4B show a mass fraction of a given deposition with Figure 4A showing deposition when a single inlet is provided and Figure 4B showing deposition when a mixing channel according to certain embodiments is provided. As seen, the uniformity of the deposited layer is drastically increased when in Figure 4B relative to 4A.

[0068] In at least some embodiments, the gas inlet(s) is / are configured to inject gas into the mixing channel at an angle other than normal to the side of the body. For example, according to certain embodiments the gas inlets are configured to inject gas into the mixing channel such that the gas is injected at an angle other than 90 degrees to the tangent of the mixing channel at the point of injection. In at least some embodiments, the gas inlets have a center line which is angled relative to the diameter of the in-feed part. According to certain embodiments, a center line of the inlet may be other than normal to the body. For example, gas inlets may be angled at 5 degrees. In certain embodiments, the gas inlet is from 1 to 45degrees from normal to the mixing channel. In at least some embodiments the gas inlet is from 1 to 25 degrees from normal.

[0069] Figure 3A provides a cross section according to at least some embodiments wherein the nozzle(s) 333 are configured to inject gas, from the mixing channel 335 into the expansion space 305 towards the opening 321 at the bottom end of the in-feed part. Within at least some embodiments, the nozzle(s) 333 have a center line which is angled at least 3 degrees, preferably 5 degrees, towards the opening at the bottom end. Angling the nozzles towards the opening at the bottom end provides for enhanced convection and better gas flow containment within the in-feed part. For example, nozzles angled towards the opening at the bottom help to constrain gases, such as precursors, from spreading into the upper portion of the in-feed part and away from the reaction chamber. This can help to lower gas purge times and thus overall processing times. Figure 3B shows a cross section wherein the nozzles are angled upward.

[0070] In at least some embodiments the in-feed part is configured to deform in the direction of the top to bottom flow. For example, in an accordion like action. Within at least some embodiments the in-feed part comprises a set of nested sub-parts, for example at least two nested sub-parts, or ring-like members movable to fit within each other. One such embodiment is shown in Figures 5 and 6. The embodiment of Figure 1A could be constructed as two parts which collapse in a similar fashion to that shown in Figure 5.

[0071] As seen within Figure 5, within at least some embodiments, the expansion space is defined or formed by an in-feed part or an assembly comprising a set of nested sub-parts or ringlike members which are movable to fit within each other.

[0072] Figs. 5A and 5B show certain examples of a substrate processing modules 1010 which could support in-feed parts according to embodiments described herein. Fig. 5A is a side view showing single substrate processing within the module 1010, and Fig. 5B shows loading and unloading of substrates 1001 to and from the module 1010. The module 1010 in certain embodiments comprises an outer (vacuum) chamber 1012 at least partly accommodating the reaction chamber 1011. The outer chamber 1012 is provided with a loading section (such as a hatch, an opening, or similar) 435 shown by a dashed line. The module 1010 comprises a plasma source 1015 (in an in-feed line 421) remotely positioned with respect to the substrate 1001. Accordingly, the plasma source 1015 is a remote plasma source 1015, preferably a microwave remote plasma source. During substrate processing as shown in Fig. 5A, plasma species generated by the remote plasma source 1015 enterthe substrate processing volume (or reaction space) through a conical in-feed part 410 from the top of the reaction chamber 1011. Exhaust of gases is arranged beneath the substrate 1001 into an exhaust line 422 at the bottom of the reaction chamber 1011.

[0073] A substrate holder 415 supporting a substrate 1001 is attached to (or is suspended from) the conical in-feed part 410. When loading, a horizontally oriented substrate 1001 is transferred to the substrate holder 415 through the loading section 435. When unloading, the horizontally oriented substrate 1001 is transferred from the substrate holder 415 and through the loading section 435 out of the module 1010. In certain embodiments, the substrate 1001 is transferred by the wafer handler 1051.

[0074] In certain embodiments, the conical in-feed part 410 comprises a retractable cone. In certain embodiments, the conical in-feed part is formed of at least two nested parts 411, 412 forming a telescopic structure. During substrate loading, as shown in Fig. 5B, the retractable cone 410 is in its retracted configuration with one of the nested parts (here: lower part 412) slid over another (here: upper part 411) thereby forming a loading gap for the substrate 1001. During substrate processing, as shown in Fig. 5A, the retractable cone 410 is in its extended configuration closing the reaction chamber 1011 from the top.

[0075] The conical in-feed part 410 allows a top-to-bottom flow of plasma species towards the surface of the horizontally oriented substrate 1001. Applicable gases for the generation of plasma species comprise NH3, N2 or H2 or the like and any mixtures thereof.

[0076] Fig. 6A is a side view showing single substrate processing within an alternative first substrate processing module 1010, and Fig. 6B shows loading and unloading of substrates 1001 to and from that module 1010. The alternative first substrate processing module 1010 in certain embodiments comprises an outer (vacuum) chamber 1012 at least partly accommodating the reaction chamber 1011. The outer chamber 1012 is provided with a loading section (such as a hatch, an opening, or similar) 535 shown by a dashed line. The module 1010 comprises a plasma source 1015 (in an in-feed line 421) remotely positioned with respect to the substrate 1001. Accordingly, the plasma source 1015 is a remote plasma source 1015, preferably a microwave remote plasma source. During substrate processing as shown in Fig. 5A, plasma species generated by the remote plasma source 1015 enter the substrate processing volume (or reaction space) through a conical in-feed part 510 (here: a stationary cone) from the top of the reaction chamber 1011. Exhaust of gases is arranged beneath the substrate 101 into an exhaust line 422 at the bottom of the reaction chamber 1011.A substrate holder 515 supporting a substrate 1001 within the reaction chamber 1011 extends from the exhaust line 422 (or is supported through the exhaust line 422). In certain embodiments, the substrate holder 515 is stationary.

[0077] In certain embodiments, the exhaust line 422 comprises a deforming portion 565, such as a vacuum bellows, allowing a deformation of the exhaust line wall.

[0078] For substrate loading, a lower portion of the reaction chamber 1011 (a reaction chamber bowl) is lowered to its lowered position to form a loading gap as shown in Fig. 6B. The deforming portion 565 is in its contracted configuration. A horizontally oriented substrate 1001 is transferred to the substrate holder 515 through the loading section 535. When unloading, the horizontally oriented substrate 1001 is transferred from the substrate holder 515 and through the loading section 535 out of the module 110. In certain embodiments, the substrate 1001 is transferred by the wafer handler 1051.

[0079] For substrate processing, as shown in Fig. 6A, the lower portion of the reaction chamber 1011 is in its raised position. In certain embodiments, the lower portion of the reaction chamber 1011 contacts the conical in-feed part thus closing the reaction chamber 1011 for substrate processing.

[0080] The conical in-feed part 510 allows a top-to-bottom flow of plasma species towards the surface of the horizontally oriented substrate 1001.

[0081] A mixing channel according to previously discussed embodiments may be arranged and / or affixed to various portions of the apparatuses of Figures 5 and 6. In at least some embodiments, while the mixing channel still forms part of the in-feed part, it does not move with the in-feed part when the in-feed part is retracted. This allows for the mixing channel to be easily replaced without the need to attach inlets to a movable part of the in-feed part.

[0082] The in-feed part according to certain embodiments has an extended shape as shown in Fig.

[0083] 5A and a contracted shape as shown in Fig. 5B.

[0084] In the embodiments shown in Figs. 5 and 6, the at least one substrate 1001 is supported by or lies on a substrate holder 415 or 515. In an embodiment, the substrate holder comprises two separate sections with an open gap wide enough for freely moving a substrate fork between the sections. In at least some embodiments, the substrate holder is stationary. For example, the substrate holder may be fixed to some portion of reaction chamber or processing apparatus which is not configured to move during processingoperations, including loading and unloading of substrates. In an example embodiment, the substrate holder is configured to move together with the in-feed part. In that way the at least one substrate or the substrate holder can be pulled up for loading or unloading. In an embodiment, the substrate holder is detachably attachable. In that way the substrate holder together with the at least one substrate can be loaded or unloaded when in upper position. In at least some embodiments the substrate holder is heated.

[0085] The in-feed part may take on a variety of shapes according to embodiments of the present invention. As shown in Figures 7A and 7B, the in-feed part may take the shape of a cone. For example, the two piece cone of Figure 7A comprising a top part 711 and bottom part 712. In at least some embodiments, the top part 711 and bottom part 712 may be moved independently and interface to form a sealed inner volume when in use. Figure 7B shows an embodiment wherein the in-feed part comprises a bell or trumpet like shape. As seen, the top part 711 my be in the shape of a straight walled tube, interfacing at a seal 713 with a bottom part 712. The bottom part 712 of Figure 7B comprises a tube exhibiting a curved wall, bell or trumpet shape in at least a lower portion of the bottom part. In at least some embodiments comprising a bell or trumpet shaped cross-section, there is a reduced cycle time and / or purge time. Further, at least some embodiments provided for a reduction in precursor utilization.

[0086] Figure 7B also shows the substrate 701 upon a, preferably stationary, substrate holder 715 and the infeed paths 791 and 792. In certain embodiments the substrate holder may be integrated or attached to any portion of the reaction chamber. For example, the substrate holder may be integrated to or suspended from the bottom part 712. For the sake of illustration, the infeed paths do not show the inlets, and nozzles and instead show a combined path. Also shown in Figure 7B is the relative location of the mixing channel 735. As seen, the mixing channel may be a replaceable part or a portion of the reaction chamber which is separate from the top and bottom parts of the in-feed part.

[0087] Dashed box 755 of Figure 7B illustrates an in-feed part according to at least some embodiments. Such an in-feed part may be easily replaced and / or serviced as it may be a detachable portion of the reaction chamber, for example a detachable component affixed to the reaction bowl or lower portion of the reaction chamber.

[0088] Figures 7C and 7D show different arrangements with regard to the inlets. In the alternative shown in Figure 7C, the in-feed paths (in-feed path 792 is shown) are implemented completely within the reaction chamber bowl top part 790. In the alternative shown in Figure7D, the in-feed paths enter from the reaction chamber bowl top part 790 to the bottom part 712 of the in-feed part 710 through respective interfaces. For example, a metal-to-metal interface. Accordingly, when a loading gap is being formed by sliding the bottom part 712 over the top part 711 (not shown in Figs. 7C and 7D), the in-feed part remains within the reaction chamber top part 790 in the arrangement shown in Figure 7C. In the arrangement shown in Figure 7D, to the contrary, the in-feed path 792 is disconnected so that a first portion of the in-feed path 792 remains within the reaction chamber top part 790 and a second portion of the in-feed path 792 remains fixed to the bottom part 712 when the bottom part 712 is moved away from part 790, or raised, to form a loading gap. For the sake of illustration, the mixing channel is not shown in Figures 7C and 7D, however it would be present as described in other embodiments herein.

[0089] As seen in Figures 7C and 7D, in at least some embodiments the in-feed part 755 may be a portion of the upper portion of the reaction chamber 755D or the bottom portion of the reaction chamber 755C. In at least some embodiments as illustrated in 7D, the in-feed part comprises both the area denoted by dashed box 755D and the portions affixed there to, for example the 712 lower part and potentially parts affixed to the lower part.

[0090] Figure 8A shows a cross section of a mixing channel according to certain embodiments which is designed to releasably interface with other portions of the in-feed. Such a mixing channel could be provided independently as a replacement part. As seen in Figure 8A, the mixing channel comprises a nozzle 833. However, the inlets to the mixing channel would be comprised in another portion of the in-feed part. For example, a portion of the in-feed part, for example the bottom part of Figures 7A and 7B could interface around the circumference of the mixing channel in order to seal the channel in fluid connection with inlets comprised in the bottom part.

[0091] Figure 8B similarly shows a mixing channel designed to interface with another portion of the in-feed part. Here, the other portion seals the top of the mixing channel and as such the mixing channel of Figure 8B already comprises the inlets 831.

[0092] The expansion space is defined or formed by an in-feed part as per at least some embodiments described herein. As discussed, the in-feed part may comprise a set of nested sub-parts or ring-like members which are movable to fit within each other. The sub-parts thus form a telescopic structure.

[0093] Figure 1 further illustrates most of the components of a chemical vapor processing reactoraccording to certain embodiments. As shown, a chemical vapor processing reactor, such as a deposition reactor, according to embodiments comprises, an in-feed part 101 as described herein, a reaction chamber 150 arranged below the in-feed part 101 , and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. In certain embodiments, the lifting mechanism comprises a plurality of symmetrically placed elevators. As discussed herein, the lifting mechanism may be affixed to the in-feed part to lift a portion or all of the in-feed part to allow for exchanging a substrate or deposition target. In at least some embodiments, the chemical vapor processing reactor being configured to deposit material on said at least one substrate in the reaction chamber by sequential self-saturating surface reactions. For example, at least some chemical vapor processing reactors comprise a control system or controller configured to perform a sequential deposition. In at least some embodiments, the lifting mechanism is configured to change the dimensions of the in-feed part. In certain embodiments, the in-feed part has a contracted shape and an extended shape, and the lifting mechanism is configured to push or pull the in-feed part from the extended shape to the contracted shape allowing said loading of said at least one substrate when said in-feed part is in its contracted shape. In at least some embodiments, the in-feed part is attached to an expansion space flange which in turn is fitted against a top flange of the reaction chamber during deposition. In some cases, the lifting mechanism is configured to move a substrate holder carrying said at least one substrate between an upper position for loading or unloading and a lower position for deposition. Certain chemical vapor processing reactors according to some embodiments comprise a substrate transfer chamber between the plasma source and said reaction chamber. In some embodiments, there is a manual access hatch in the in-feed part.

[0094] According to a third aspect of the present invention, there is provided a method of operating a chemical vapor processing reactor as described herein. A method comprising: operating the chemical vapor processing reactor according to an embodiment described herein.

[0095] In an example embodiment, the chemical vapor processing reactor described herein is a computer-controlled system. A computer program stored into a memory of the system comprises instructions, which upon execution by at least one processor of the system cause the chemical vapor processing reactor to operate as instructed. The instructions may be in the form of computer-readable program code. Fig. 9 shows a rough block diagram of a chemical vapor processing reactor control system 1700. In a basic system setup process parameters are programmed with the aid of software and instructions are executed with a human machine interface (HMI) terminal 1706 and downloaded via Ethernet bus 1704 orsimilar to a control box 1702. In an embodiment, the control box 1702 comprises a general purpose programmable logic control (PLC) unit. The control box 1702 comprises at least one microprocessor for executing control box software comprising program code stored in a memory, dynamic and static memories, I / O modules, A / D and D / A converters and power relays. The control box 1702 sends electrical power to pneumatic controllers of appropriate valves of the chemical vapor processing reactor, and has two-way communication with appropriate mass flow controllers, and controls the operation of the plasma source and radical generation and the elevator(s), as well as otherwise controls the operation of the chemical vapor processing reactor. The controlling of the operation of the elevator(s) comprises controlling the elevator(s) to move a substrate holder carrying the at least one substrate between an upper position for loading or unloading and a lower position for deposition. The control box 1702 may measure and relay probe readings from the chemical vapor processing reactor to the HMI terminal 1706. A dotted line 1716 indicates an interface line between the chemical vapor processing reactor parts and the control box 1702.

[0096] According to an example embodiment the in-feed part comprises a plurality of gas inlets, for example six horizontal gas inlets, configured to be positioned above the substrate, wafer or processing during processing, for example deposition. In at least some embodiments the gas inlets are located between 10 and 30 mm above the wafer surface, more preferable between 15 and 25 mm above the wafer surface The in-feed part further comprises one vertical gas inlet at the top of the in-feed part. During processing, precursor is introduced into the chamber from any of these gas inlets and from there into the mixing channel. Mixing channels per certain embodiments provide for sufficient mixing length for the gases to interact and mix before being released from the mixing channel into the reaction or expansion space. The mixing channel itself of certain embodiments comprises two diametrically opposite nozzles, for example of at least 2mm diameter, preferably at least 3mm, for example 4mm diameter. These nozzles introduce mixed gases, that is gases that have flowed through the mixing channel into the reaction space, expansion space or chamber. In certain embodiments the nozzles are angled at five degrees down towards the wafer to restrict precursor spread into the upper portions of the in-feed part. The nozzles of certain embodiments also provide increased velocity for convective mixing within the reaction space, expansion space or chamber. In at least some embodiments the mixing channel has an inner diameter of at least 100mm, preferably at least 150 mm, for example 170mm and mixing plenum of at least 5mm width, for example 8mm width.

[0097] Within at least some embodiments chemical vapor processing includes deposition or etching. In certain embodiments chemical vapor processing includes preclean prior todeposition or etching. In some embodiments chemical vapor processing includes atomic layer deposition, ALD.

[0098] Within at least some embodiments, the walls of the mixing channel serve to form an annular flow channel. In certain embodiments, the wall of the cylindrical body of the in-feed part, also serves to form the annular flow channel. For example, in at least some embodiments, a portion of each mixing channel forms a portion of the side of the body of the in-feed part.

[0099] In at least some embodiments, the mixing channel is affixed around the body of the in-feed part such that the body is within a ring-like shape formed by the mixing channel. In some embodiments, the mixing channel is affixed around the cylindrical body to encompass, surround and / or contain the nozzle such that the nozzle, mixing channel and gas inlet are in fluid connection.

[0100] Within at least some embodiments, the gas inlet comprises a hose connection. For example, within certain embodiments the hose connections are vacuum compatible. Certain embodiments employ compression fittings. At least some embodiments employ O-rings and certain embodiments comprise VCR fittings.

[0101] Within at least some embodiments, the in-feed part is modular such that the mixing channel and remainder of the in-feed part are releasably affixed to each other. Within certain modular embodiments there are interfaces between portions such that they are modular. For example, within at least some embodiments the mixing channel further comprises flanges configured to allow for connection between flanges of the mixing channel and remainder of the in-feed part and / or reaction chamber. At least some embodiments employ welded flanges. In certain embodiments the flanges are vacuum flanges. In at least some embodiments the interface is a quick release flange. For example, an ISO standard Quick Flange, QF, or Kleinflansch (KF) is employed in at least some embodiments. At least some embodiments employ CF flanges. Certain embodiments employ a flange having a chamfered back surface. Some embodiments employ a chamfered back surface configured to interface with an elastomeric O-ring, the flange being configured to interface with a circular clamp. Within certain embodiments the interface comprises a flange, centering ring and elastomeric O-ring.

[0102] In certain embodiments, the nozzle(s) comprise a slit. In at least some embodiments, the slit continues around the entire circumference of the mixing channel such that the body ofthe mixing channel facing the reaction space is split into at least two segments. In certain embodiments the nozzle(s) comprises a series of slits.

[0103] Within at least some embodiments, the top inlet further comprises a mixer configured to provide non-laminar flow via the top inlet. For example, in certain embodiments, the mixer is configured to provide a vortex flow.

[0104] Within at least some embodiments, the entire in-feed part forms a tapered body, for example a cylindrical body that is tapered. Within certain embodiments, the in-feed part comprises multiple tapers. In some embodiments, the in-feed part is a cone. For example, within certain embodiments, the in-feed part is in the shape of a truncated cone

[0105] At least some mixing channel according to certain embodiments are toroidal. Toroids as discussed herein include, but are not limited to, round toroids, square toroids, rectangular toroids, and elliptical toroids. At least some toroidal objects as discussed herein include toroidal polyhedrons. Certain toroidal objects are irregular toroids such that they do not have a consistent cross section. At least some toroidal objects are annular.

[0106] Fig. 10 shows a block diagram of a control unit 1100 in accordance with certain example embodiments. The control unit 1100 comprises at least one processor 1101 configured to control the operation of the apparatus 100 and at least one memory 1102 comprising a computer program or software 1103. The software 1103 includes instructions or a program code to be executed by the at least one processor 1101 to control an apparatus, for example a chemical vapor reactor according to certain embodiments described herein. The software 1103 may typically comprise an operating system and different applications. In certain embodiments, the control unit 1100 is configured as a computerized system, which uses one or more computers.

[0107] The at least one memory 1102 may form part of the apparatus or it may be formed of an attachable module. The control unit 1100 further comprises at least one communication unit 1104. The communication unit 1104 provides for an interface for internal communication of the apparatus. In certain embodiments, the control unit 1100 uses the communication unit 1104 to send instructions or commands to valves, heater(s), pressure sensor(s), vacuum pump(s), and other adjustment devices (not shown). In certain embodiments, the control unit 1100 uses the communication unit 1104 further to receive data from different parts of the apparatus, such as from different sensors etc.The control unit 1100 may further comprise a user interface 1106 to co-operate with an operator, for example, to receive input such as process parameters from the operator. In certain embodiments, the user interface 1106 is connected to the at least one processor 1101.

[0108] In certain embodiments, the control unit 1100, inter alia, is programmed (i.e., the control unit 1100 or processor 1101 is configured, based on the stored instructions in memory) to cause an apparatus, such as a chemical vapor reactor according to certain embodiments described herein, to process at least one substrate in a plasma-enhanced process.

[0109] Various embodiments have been presented. It should be appreciated that in this document, words comprise, include, and contain are each used as open-ended expressions with no intended exclusivity.

[0110] The foregoing description has provided by way of non-limiting examples of particular implementations and embodiments a full and informative description of the best mode presently contemplated by the inventors for carrying out the invention. It is however clear to a person skilled in the art that the invention is not restricted to details of the embodiments presented in the foregoing, but that it can be implemented in other embodiments using equivalent means or in different combinations of embodiments without deviating from the characteristics of the invention.

[0111] Furthermore, some of the features of the afore-disclosed example embodiments may be used to advantage without the corresponding use of other features. As such, the foregoing description shall be considered as merely illustrative of the principles of the present invention, and not in limitation thereof. Hence, the scope of the invention is only restricted by the appended patent claims.

Claims

CLAIMS1. An in-feed part (101) for a chemical vapor processing reactor, the in-feed part (101) defining an expansion space (105) which is configured to lead reactants as a top to bottom flow from a plasma source through a reaction chamber (150), the in-feed part (101) comprising:a body (110) comprising an opening (121) at a bottom end configured to be placed proximate a reaction bowl of the reaction chamber (150), the side of the body (110) comprising at least one gas inlet (131) for receiving at least one of a: a carrier gas and a precursor;a mixing channel (135) arranged within or adjacent to the body (110) such that the at least one gas inlet (131) is in fluid connection with the mixing channel (135), the side of the mixing channel (135) comprising a nozzle (133) fluidly connecting the mixing channel (135) with the expansion space (105).

2. The in-feed part of claim 1, wherein the expansion space (105) widens towards the reaction bowl.

3. The in-feed part of any preceding claim, wherein the mixing channel (135) is annular.

4. The in-feed part of any preceding claim, wherein the body (110) further comprises an opening (122) at a top end for receiving at least one of a plasma, etch gas, or carrier gas.

5. The in-feed part of any preceding claim, wherein the side of the body (110) comprises at least three gas inlets (131) in fluid connection with the mixing channel (135).

6. The in-feed part of any preceding claim, wherein the gas inlet(s) (131) is / are configured to inject gas into the mixing channel (135) at an angle other than normal to the side of the body (110).

7. The in-feed part of any preceding claim, wherein the side of the mixing channel (135) comprises at least two nozzles (133) fluidly connecting the mixing channel (135) with the expansion space (105).

8. The in-feed part of any preceding claim, wherein the nozzle(s) (133) and gas inlet(s) (131) are not arranged along the same radial relative to the center of the expansion space (105).

9. The in-feed part of any preceding claim, the nozzle(s) (133) being configured to inject gas into the expansion space (105) towards the opening (121) at the bottom end.

10. The in-feed part of any preceding claim, wherein the nozzle(s) (133) have a center line which is angled at least 3 degrees, preferably 5 degrees, towards the opening (121) at the bottom end.

11. The in-feed part of any preceding claim, wherein the nozzle(s) (133) have a diameter of at least 3 mm, preferably 5mm.

12. The in-feed part of any preceding claim, wherein the in-feed part (101) is configured to deform in the direction of the top to bottom flow.

13. The in-feed part of claim 12, wherein the in-feed part (101) is configured to deform in the direction of the top to bottom flow such that two distinct configurations are achieved:a first configuration for loading / unloading; anda second configuration for processing.

14. The in-feed part of any preceding claim, wherein the in-feed part (101) comprises a set of nested sub-parts or ring-like members movable to fit within each other.

15. The in-feed part of any preceding claim, wherein the in-feed part (101) comprises a tubular shape configured to be positioned above the reaction bowl, for example, a tubular shape comprising a curved wall, such as a trumpet or bell shaped wall.

16. A chemical vapor processing reactor, such as a deposition reactor, comprising:the in-feed part (101) of any preceding claim;a reaction bowl arranged below the in-feed part (101); anda lifting mechanism for loading at least one substrate to the substrate holder (415) within a reaction chamber (150) at least partially formed by the reaction bowl andin-feed part (101),the chemical vapor processing reactor being configured to deposit material on said at least one substrate in the reaction chamber (150) by sequential self-saturating surface reactions.

17. The chemical vapor processing reactor of claim 16, wherein the lifting mechanism is configured to change the dimensions of the in-feed part (101).

18. The chemical vapor processing reactor of claim 16 or 17, wherein the in-feed part (101) has a contracted shape and an extended shape, and the lifting mechanism is configured to push or pull the in-feed part from the extended shape to the contracted shape allowing said loading of said at least one substrate when said in-feed part is in its contracted shape.

19. The chemical vapor processing reactor of any one of claims 16 - 18, wherein said in- feed part (101) is attached to an expansion space (105) flange which in turn is fitted against a top flange of the reaction chamber (150) during deposition.

20. A method comprising: operating the chemical vapor processing reactor according to any one of claims 16 - 19.

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