Storage device, electronic equipment, and storage device control method
The storage device with a voltage-controlled magnetoresistive element and control circuit addresses the challenge of precise voltage control in VC-MRAM, reducing write error rates by using magnetic layers with different anisotropy effects and a spacer layer to manage voltage application time.
WO2026141095A1PCT designated stage Publication Date: 2026-07-02SONY SEMICON SOLUTIONS CORP
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- SONY SEMICON SOLUTIONS CORP
- Filing Date
- 2025-12-17
- Publication Date
- 2026-07-02
AI Technical Summary
Technical Problem
Existing voltage-controlled magnetic random access memory (VC-MRAM) technologies face challenges in controlling the voltage application time with high precision due to parasitic resistance and capacitance, leading to increased write error rates as memory size increases.
Method used
A storage device with a voltage-controlled magnetoresistive element and a first control circuit that attenuates voltage or current, comprising a first and second magnetic layer with different voltage-controlled magnetic anisotropy effects and a spacer layer, is used to control the voltage application time.
Benefits of technology
This configuration reduces write error rates by accurately controlling the voltage application time, improving the reliability of data storage in VC-MRAM.
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Smart Images
Figure JP2025044154_02072026_PF_FP_ABST
Abstract
According to one embodiment, the present invention comprises a voltage-controlled magnetoresistive element having a variable resistance value, and a first control circuit that controls a voltage or a current applied to the magnetoresistive element. The magnetoresistive element includes a first magnetic layer having a voltage-controlled magnetic anisotropy effect, a second magnetic layer having a voltage-controlled magnetic anisotropy effect of a different magnitude from the voltage-controlled magnetic anisotropy effect of the first magnetic layer, and a spacer layer provided between the first magnetic layer and the second magnetic layer. The first control circuit attenuates the voltage or the current.
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