Device and method for processing substrate
The substrate processing apparatus addresses gas mixing issues by using independently controlled separation gas injection units to maintain process region separation and enhance thin film quality in multi-region processing.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- WONIK IPS CO LTD
- Filing Date
- 2025-03-28
- Publication Date
- 2026-07-09
AI Technical Summary
Existing substrate processing apparatuses face challenges in efficiently separating and controlling the flow rates of separation gases between multiple process regions within a single process chamber, leading to potential gas mixing and degradation of thin film quality.
A substrate processing apparatus with independently controlled first and second main separation gas injection units and first and second sub-separation gas injection units, allowing for varying flow rates of separation gases to maintain process region independence and prevent gas mixing.
Enhances process uniformity and thin film quality by reducing gas mixing and residue contamination, enabling simultaneous and diverse substrate processing in multiple regions.
Smart Images
Figure KR2025004002_09072026_PF_FP_ABST
Abstract
Description
Substrate processing apparatus and method
[0001] The present invention relates to a substrate processing apparatus and method, and more specifically, to a substrate processing apparatus and method having a plurality of separation gas injection units for separating a plurality of process regions.
[0002] Recently, substrate processing for multiple substrates is being carried out within a single process chamber for various purposes, such as productivity and process uniformity.
[0003] A substrate processing device for this purpose includes a separation gas injection unit that injects a separation gas to partition a processing space of a process chamber into a plurality of process regions. Specifically, the gas injection structure of the substrate processing device may include a plurality of process gas injection units corresponding to a plurality of process regions and a plurality of separation gas injection units disposed between the plurality of process gas injection units.
[0004] At this time, the plurality of separation gas injection units inject separation gas at the same flow rate. Specifically, each of the plurality of separation gas injection units continuously injects separation gas having a flow rate sufficient to independently maintain the plurality of process zones from the time the substrate processing process for the plurality of substrates begins until the time it is completed.
[0005] Embodiments of the present invention provide a substrate processing apparatus and method for differently controlling the injection flow rates between a plurality of separation gas injection units disposed between a plurality of process regions.
[0006] A substrate processing apparatus according to an embodiment of the present invention comprises: a process chamber including at least two process areas, each having at least two sub-process areas; a substrate support configured to be rotatable to move the plurality of substrate support modules to the next sequence of sub-process areas, wherein the plurality of substrate support modules are spaced apart at a certain interval so that at least one substrate can be positioned in each of the two sub-process areas of each process area and disposed inside the process chamber; a gas injection structure configured to include a plurality of process gas injection units disposed above the process chamber to face the substrate support and injecting process gas toward the facing substrate support module, and first and second main separation gas injection units disposed between the plurality of process gas injection units to inject separation gas to distinguish the at least two process areas, and first and second sub-separation gas injection units to inject separation gas to distinguish the at least two sub-process areas in each process area. and includes a control unit that controls the gas injection structure so that the first and second main separation gas injection units and the first and second sub-separation gas injection units inject separation gases of different flow rates while the substrate processing process is performed within the process chamber.
[0007] A substrate processing method according to an embodiment of the present invention is performed using a substrate processing apparatus comprising at least two process regions each having at least two sub-process regions, first and second main separation gas injection units for injecting separation gas to separate the at least two process regions, and first and second sub-separation gas injection units for injecting separation gas to separate the at least two sub-process regions in each process region, and comprises a first step of injecting process gas into each of the at least two sub-process regions of each process region, a second step of injecting purge gas into each of the at least two sub-process regions of each process region when the injection of the process gas is completed, and a third step of moving a substrate placed in the at least two sub-regions of each process region to the next sequence of sub-process regions.
[0008] The above first to third steps are repeatedly performed until the formation of a desired thin film on the substrate is completed, and while the above first to third steps are repeatedly performed, the first and second main separation gas injection units and the first and second sub-separation gas injection units inject separation gases of different flow rates.
[0009] According to an embodiment of the present invention, when the same process gases are injected into adjacent sub-process areas or process gases with low reactivity are injected, the amount of separation gas used during the substrate processing process can be reduced by controlling a separation gas injection unit disposed between the sub-process areas to inject a separation gas at a relatively low flow rate.
[0010] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
[0011] FIG. 2 is a bottom view showing a plurality of process gas injection units, a plurality of separation gas injection units, and a plurality of purge gas injection units provided in the lead of the substrate processing device illustrated in FIG. 1.
[0012] FIG. 3 is an enlarged perspective view of a substrate support of a substrate processing device illustrated in FIG. 1.
[0013] FIG. 4 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.
[0014] FIG. 4 illustrates the best mode for carrying out the present invention.
[0015] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a bottom view showing a plurality of process gas injection units, a plurality of separation gas injection units, and a plurality of purge gas injection units provided in the lead of the substrate processing apparatus shown in FIG. 1, and FIG. 3 is an enlarged perspective view showing a substrate support of the substrate processing apparatus shown in FIG. 1. For reference, FIG. 1 may correspond to the structure corresponding to the cross-section along line II′ of FIG. 2 and the cross-sectional structure along line II-II′ of FIG. 3.
[0016] Referring to FIGS. 1 to 3, the substrate processing apparatus (10) according to an embodiment of the present invention may be, for example, a space-time divided atomic layer deposition apparatus having a processing space divided into a plurality of process regions.
[0017] In an embodiment, the substrate processing device (10) may include a process chamber (100), a gas injection structure (200), a substrate support (300), a heater (450), an exhaust unit (500), and a controller (600).
[0018] The process chamber (100) may include a chamber wall (110a) and a lid (120). The lid (120) may be located at the upper edge of the chamber wall (110a). A processing space (110) within the process chamber (100) may be limited as a gas injection structure (200) is inserted and fixed between the lids (120).
[0019] The process chamber (100) may include a sealing member (not shown) interposed between the chamber wall (110a) and the lid (120). The sealing member may include, but is not limited to, an O-ring.
[0020] In an embodiment, the processing space (110) may be divided into first and second process areas (A1 and A2). Additionally, in an embodiment, the first and second process areas (A1 and A2) may each be divided into two sub-process areas. For example, as shown in FIGS. 2 and 3, the processing space (110) may be divided into first to fourth sub-process areas (A11, A12, A21, A22).
[0021] In the embodiment, the same substrate processing process may be performed in the first and second sub-process areas (A11, A12), and the same substrate processing process may be performed in the third and fourth sub-process areas (A21, A22). Additionally, the substrate processing process performed in the first and second sub-process areas (A11, A12) and the substrate processing process performed in the third and fourth sub-process areas (A21, A22) may be different from each other.
[0022] In another embodiment, individual substrate processing processes may be performed in each of the first to fourth sub-process areas (A11, A12, A21, A22). That is, the substrate processing processes performed in each of the first to fourth sub-process areas (A11, A12, A21, A22) may all be different.
[0023] As such, since different substrate processing processes are performed simultaneously within the same chamber (100), each sub-process area (A11, A12, A21, A22) needs to be separated independently. To this end, a separation area in which a separation gas is injected can be formed between the first to fourth sub-process areas (A11, A12, A21, A22).
[0024] The gas injection structure (200) may include first to fourth process gas injection sections (210, 220, 230, 240) for providing process gases to each of the first to fourth sub-process regions (A11, A12, A21, A22).
[0025] In an embodiment, the first process gas injection unit (210), the second process gas injection unit (220), the third process gas injection unit (230), and the fourth process gas injection unit (240) may be spaced apart at 90° intervals. The first process gas injection unit (210), the second process gas injection unit (220), the third process gas injection unit (230), and the fourth process gas injection unit (240) may be arranged sequentially along the circumferential direction.
[0026] The first to fourth process gas injection sections (210, 220, 230, 240) can each be connected to the first to fourth process gas supply blocks (250a, 250b, 250c, 250d).
[0027] In an embodiment, the first sub-process area (A11) may be located below the first process gas injection unit (210), the second sub-process area (A12) may be located below the second process gas injection unit (220), the third sub-process area (A21) may be located below the third process gas injection unit (230), and the fourth sub-process area (A22) may be located below the fourth process gas injection unit (240).
[0028] For example, in a substrate processing process in which the same process gas (e.g., source gas) is injected from the first and second process gas injection units (210, 220) and the same reaction gas is injected from the third and fourth process gas injection units (230, 240), when the adsorption of the source gas on the substrate placed in each of the first and second sub-process areas (A11, A12) is completed, the control unit (600) can rotate the substrate support (300) 180° to move the substrate placed in each of the first and second sub-process areas (A11, A12) to the third and fourth sub-process areas (A21, A22). Accordingly, the substrate on which the adsorption of the source gas is completed can be positioned below the third and fourth process gas injection units (230, 240). In an embodiment, while process gas is injected from the first and second process gas injection units (210, 220) to the first and second sub-process areas (A11, A12), the third and fourth process gas injection units (230, 240) can inject purge gas into the third and fourth sub-process areas (A21, A22).
[0029] Additionally, after the adsorption of the source gas on the substrate placed in each of the first and second sub-process areas (A11, A12) is completed, the first and second process gas injection units (210, 220) can supply a purge gas to remove the process gas remaining in each of the first and second sub-process areas (A11, A12).
[0030] Subsequently, the third and fourth process gas injection units (230, 240) can supply reaction gas to a substrate (i.e., a substrate on which source gas is adsorbed) placed in each of the third and fourth sub-process areas (A21, A22). At the same time, the first and second process gas injection units (210, 220) can supply process gas (e.g., source gas) to the first and second sub-process areas (A11, A12).
[0031] At this time, a thin film can be formed on a substrate through a reaction between the source gas and the reaction gas adsorbed on the substrate placed in each of the third and fourth sub-process areas (A21, A22). Additionally, the source gas can be adsorbed on the substrate placed in each of the first and second sub-process areas (A11, A12). When the supply of the reaction gas and the source gas is completed, the first to fourth process gas injection units (210, 220, 230, 240) can remove residual gases by injecting purge gas into the corresponding sub-process areas.
[0032] By repeating this substrate processing process a set number of times, a thin film of a desired thickness can be formed on a substrate placed in each of the sub-process areas (A11, A12, A21, A22). In this way, the method in which the same substrate processing process is performed in the first process area (A1) and the same substrate processing process is performed in the second process area (A2) can be referred to as a 2-Zone substrate processing method.
[0033] In this 2-Zone substrate processing method, the first and second process gas supply blocks (250a, 250b) connected to the first and second process gas injection units (210, 220) include a source gas source and a purge gas source, and the third and fourth process gas supply blocks (250c, 250d) connected to the third and fourth process gas injection units (230, 240) may include a reaction gas source and a purge gas source, but are not specifically limited thereto.
[0034] In an embodiment, the gas injection structure (200) may further include a plurality of separated gas injection parts (260a, 260b, 260c, 260d, 260e).
[0035] For example, a plurality of separation gas injection units (260a, 260b, 260c, 260d, 260e) may include first and second main separation gas injection units (260a and 260b) that separate a first process area (A1) and a second process area (A2), a first sub-separation gas injection unit (260c) that separates a first sub-process area (A11) and a second sub-process area (A12) in the first process area (A1), a second sub-separation gas injection unit (260d) that separates a third sub-process area (A21) and a fourth sub-process area (A22) in the second process area (A2), and a central separation gas injection unit (260e) located at the center where each of the first and second main separation gas injection units (260a, 260b) and the first and second sub-separation gas injection units (260c, 260d) are connected to each other.
[0036] A plurality of separation gas injection units (260a to 260e) can prevent mixing of process gases injected into each of the first to fourth sub-process regions (A11, A12, A21, A22) and unexpected reactions between process gases and reaction gases. For example, a plurality of separation gas injection units (260a, 260b, 260c, 260d, 260e) can inject an inert gas, such as argon (Ar) gas or nitrogen (N2) gas, into the separation region as a separation gas. Accordingly, when a substrate moving to be positioned in the next sequence of sub-process regions (A11, A12, A21, A22) passes under the first and second main separation gas injection units (260a, 260b) and the first and second sub-separation gas injection units (260c, 260d), process gases and reaction byproducts remaining on the substrate may be removed by the separation gas.
[0037] For example, the first and second main separation gas injection sections (260a, 260b) may be positioned between the first process gas injection section (210) and the third process gas injection section (230), and between the second process gas injection section (220) and the fourth process gas injection section (240), respectively. Additionally, the first and second sub-separation gas injection sections (240c, 240d) may be positioned between the first process gas injection section (210) and the second process gas injection section (220), and between the third process gas injection section (230) and the fourth process gas injection section (240), respectively.
[0038] Additionally, the central separation gas injection unit (260e) may be positioned at the center where the first and second main separation gas injection units (260a, 260b) and the first and second sub-separation gas injection units (260c, 260d) are connected to each other. The central separation gas injection unit (260e) can inject separation gas into the center between the first to fourth sub-process areas (A11, A12, A21, A22) to prevent the process gases from mixing between the first to fourth sub-process areas (A11, A12, A21, A22).
[0039] In an embodiment, each of the plurality of separation gas injection units (260a, 260b, 260c, 260d, 260e) may be connected to a separation gas supply block (270) through corresponding first to fifth separation gas supply lines (271, 272, 273, 274, 275). For example, each of the first to fifth separation gas supply lines (271, 272, 273, 274, 275) may include a flow controller (Mass Flow Controller, MFC, not shown) for controlling the flow rate of injection gas supplied to the corresponding separation gas injection unit, and a valve (not shown) that is controlled to open or close according to a signal from the MFC.
[0040] In an embodiment, the gas injection structure (200) may further include a plurality of purge gas injection parts (280a, 280b, 280c, 280d). For example, each of the plurality of purge gas injection parts (280a, 280b, 280c, 280d) may be arranged to surround a corresponding process gas injection part. Accordingly, each of the plurality of purge gas injection parts (280a, 280b, 280c, 280d) can inject purge gas into a corresponding sub-process area. Specifically, each of the plurality of purge gas injection parts (280a, 280b, 280c, 280d) can inject purge gas into the surface of a susceptor (310) located within a corresponding sub-process area.
[0041] Ideally, the process gas injected from each of the first to fourth process gas injection units (210, 220, 230, 240) should travel in a straight line toward the substrate placed within the corresponding sub-process area, but for various reasons, it may diffuse toward the surface of the susceptor (310) outside the substrate and the inner wall of the process chamber (100). Additionally, during the rotation of the substrate support (300), residues of the process gas may fall onto the surface of the susceptor (210) outside the substrate. These residues of the process gas may float inside the process chamber (100) and be adsorbed onto the thin film deposited on the substrate, thereby degrading the quality of the thin film.
[0042] To solve the above-mentioned problem, a plurality of purge gas injection units (280a, 280b, 280c, 280d) according to the present embodiment may inject purge gas onto the surface of the susceptor (310) to prevent the process gas from diffusing to the surface of the susceptor (310) and the inner wall of the process chamber (100). In the embodiment, each of the plurality of purge gas injection units (280a, 280b, 280c, 280d) may include a plurality of purge holes. Additionally, each of the plurality of purge gas injection units (280a, 280b, 280c, 280d) may be connected to a purge gas supply block (290) through a corresponding purge gas supply line. Additionally, a plurality of purge gas supply lines connected to each of the plurality of purge gas injection units (280a, 280b, 280c, 280d) may each include a mass flow controller (MFC, not shown) for controlling the flow rate supplied to the corresponding purge gas injection unit and a valve (not shown) that is controlled to open or close according to a signal from the MFC. Here, the purge gas may include an inert gas.
[0043] To summarize once again, the gas injection structure (200) according to the present embodiment includes a total of three groups of gas injection units, specifically, first to fourth process gas injection units (210, 220, 230, 240) arranged to face a substrate (or substrate support module (400-1, 400-2, 400-3, 400-4), see FIG. 3) placed in each of the four sub-process areas (A11, A12, A21, A22), a plurality of separation gas injection units (260a, 260b, 260c, 260d, 260e) arranged to face separation areas between the four sub-process areas (A11, A12, A21, A22) and a central area where the four sub-process areas are connected, and located in each of the four sub-process areas (A11, A12, A21, A22). It may include a plurality of purge gas injection parts (280a, 280b, 280c, 280d) positioned to face the surface of the susceptor (310).
[0044] For example, when a 2-Zone substrate processing process is performed in a substrate processing device (10) according to the present embodiment, the control unit (600) can control the MFCs included in each of the first to fifth separation gas supply lines (271, 272, 273, 274, 275) so that the first and second separation main gas injection units (260a, 260b) and the central separation gas injection unit (260e) located between the first process area (A1) and the second process area (A2) inject separation gas at a first flow rate, and the first and second sub-separation gas injection units (260c, 260d) located between the first sub-process area (A11) and the second sub-process area (A12) and between the third sub-process area (A21) and the fourth sub-process area (A22) inject separation gas at a second flow rate lower than the first flow rate. Here, the second flow rate may be a minimum flow rate capable of preventing the adsorption of process gas and thin film deposition on the surfaces of the first and second sub-separation gas injection sections (260c, 260d).
[0045] As another example, individual substrate processing processes may be performed in each of the first to fourth sub-process areas (A11, A12, A21, A22). That is, the substrate processing processes performed in each of the first to fourth sub-process areas (A11, A12, A21, A22) may all be of different types of processes. In this way, the method of performing different types of substrate processing processes in each of the first to fourth sub-process areas (A11, A12, A21, A22) may be referred to as a 4-Zone substrate processing method.
[0046] In this embodiment, the 4-Zone substrate processing method is assumed to proceed clockwise starting from the first sub-process area (A11) and to complete one unit cycle of the substrate processing process at the third sub-process area (A21). This is an assumption made for convenience of explanation, and it will be obvious to those skilled in the art that the location of the sub-process area where the process starts can be changed according to the design.
[0047] For example, the first process gas injection unit (210) can inject a first process gas onto a substrate placed in the first sub-process area (A11). Here, the first process gas may include an inhibitor gas. The inhibitor gas is a deposition suppressing gas that can suppress the adsorption of process gases injected in a subsequent processing step onto the substrate. Additionally, the first process gas supply block (250a) connected to the first process gas injection unit (210) may include an inhibitor gas source and, in some cases, may further include a purge gas source. Accordingly, the first process gas injection unit (210) can inject an inhibitor gas or a purge gas into the first sub-process area (A11).
[0048] The second process gas injection unit (220) can inject a second process gas, a third process gas, or a purge gas onto a substrate placed in the second sub-process area (A12). Additionally, the second process gas supply block (250b) connected to the second process gas injection unit (220) may include a second process gas source, a third process gas source, and a purge gas source. For example, the second process gas may be a main process gas selected from a Zr-containing precursor, an Hf-containing precursor, and a Ta-containing precursor. Additionally, the third process gas may be a main process gas different from the second process gas selected from a Zr-containing precursor, an Hf-containing precursor, and a Ta-containing precursor.
[0049] The fourth process gas injection unit (240) can inject a fourth process gas, a fifth process gas, or a purge gas onto a substrate placed in the fourth sub-process area (A22). Additionally, the fourth process gas supply block (250d) connected to the fourth process gas injection unit (240) may include a fourth process gas source, a fifth process gas source, and a purge gas source. For example, the fourth process gas may be a precursor containing a metal with a different composition from the second process gas. Specifically, the fourth process gas may be one selected from an Al-containing precursor, a Y-containing precursor, and a Ti-containing precursor. The fifth process gas may be a precursor containing a metal with a different composition from the third and fourth process gases. For example, the fifth process gas may be one selected from an Al-containing precursor, a Y-containing precursor, and a Ti-containing precursor.
[0050] The third process gas injection unit (230) can inject a first reaction gas, a second reaction gas, or a purge gas onto a substrate placed in the third sub-process area (A21). Additionally, the third process gas supply block (250c) connected to the third process gas injection unit (230) may include a first reaction gas source, a second reaction gas source, and a purge gas source. For example, the first reaction gas may include O2 or an O3 precursor, and the second reaction gas may include H2O.
[0051] The first main separation gas injection unit (260a) may be positioned between the first process gas injection unit (210) and the third process gas injection unit (230). The first main separation gas injection unit (260a) can inject separation gas into the separation area (B1) between the first sub-process area (A11) and the third sub-process area (A21) to prevent mixing between the inhibitor gas and the first reaction gas or between the inhibitor gas and the second reaction gas.
[0052] The second main separation gas injection unit (260b) may be positioned between the second process gas injection unit (220) and the fourth process gas injection unit (240). The second main separation gas injection unit (260b) can inject separation gas into the separation area (B3) between the second sub-process area (A12) and the fourth sub-process area (A22) to prevent mixing of the second process gas and the fourth process gas or mixing of the third process gas and the fifth process gas.
[0053] The first sub-separation gas injection unit (260c) may be positioned between the first process gas injection unit (210) and the second process gas injection unit (220). The first sub-separation gas injection unit (260c) can inject separation gas into the separation area (B4) between the first sub-process area (A11) and the second sub-process area (A12) to prevent mixing of the inhibitor gas and the second process gas or mixing of the inhibitor gas and the third process gas.
[0054] The second sub-separation gas injection unit (260d) may be positioned between the third process gas injection unit (230) and the fourth process gas injection unit (240). The second sub-separation gas injection unit (260d) can inject separation gas into the separation area (B5) between the third sub-process area (A21) and the fourth sub-process area (A22) to prevent mixing of the fourth process gas with the first reaction gas or mixing of the fifth process gas with the second reaction gas.
[0055] The central separation gas injection unit (260e) may be positioned in the center where the first and second main separation gas injection units (260a, 260b) and the first and second sub-separation gas injection units (260c, 260d) are connected to each other. The central separation gas injection unit (260e) injects separation gas into a separation area (B2) located in the center where the first to fourth sub-process areas (A11, A12, A21, A22) are connected to each other, thereby preventing the gases injected into the first to fourth sub-process areas (A11, A12, A21, A22) located diagonally from mixing in the center.
[0056] When the above-described 4-Zone substrate processing process is performed in the substrate processing device (10) according to the present embodiment, the control unit (600) can control the mass flow controller (MFC) installed in each of the first to fifth separation gas supply lines (271, 272, 273, 274, 275) so that the separation gas injection units located between adjacent sub-process areas inject separation gas at different flow rates depending on whether there is a reaction between the process gases injected into adjacent sub-process areas.
[0057] For example, the control unit (600) can control a mass flow controller (MFC) installed in each of the first to fifth separation gas supply lines (271, 272, 273, 274, 275) so that a separation gas injection unit located between adjacent sub-process areas where process gases that react with each other (or have a high reactivity) are injected injects separation gas at a first flow rate, and a separation gas injection unit located between adjacent sub-process areas where process gases that do not react with each other (or have a low reactivity) are injected injects separation gas at a second flow rate lower than the first flow rate.
[0058] Additionally, the control unit (600) can control a mass flow controller (MFC) installed in each of the first to fifth separation gas supply lines (271, 272, 273, 274, 275) so that the separation gas injection unit located between adjacent sub-process areas where process gases that must be completely blocked from mixing are injected injects the separation gas at a first flow rate, and the separation gas injection unit located between adjacent sub-process areas where process gases that may be partially mixed are injected injects injects the separation gas at a second flow rate lower than the first flow rate.
[0059] Additionally, the control unit (600) can control a Mass Flow Controller (MFC) installed in each of the first to fifth separation gas supply lines (271, 272, 273, 274, 275) such that the flow rate of the separation gas injected from the central separation gas injection unit (260e) is greater than or equal to the flow rate of the separation gas injected from the remaining separation gas injection units (260a, 260b, 260c, 160d).
[0060] Additionally, the control unit (600) can control a flow controller (MFC) installed in each of the plurality of purge gas supply lines and a flow controller (MFC) installed in each of the first to fifth separation gas supply lines (271, 272, 273, 274, 275) so that the flow rate of purge gas injected from the plurality of purge gas injection units (280a, 280b, 280c, 280d) is less than or equal to the flow rate of separation gas injected from the plurality of separation gas injection units (260a, 260b, 260c, 260d, 260e). In this way, by controlling the flow rate of the purge gas injected from the purge gas injection unit (280a 280b, 280c, 280d) to be less than or equal to the flow rate of the separated gas, it is possible to prevent the process gases remaining in each sub-process area from spreading beyond the separation area (B1 to B5) to adjacent sub-process areas, and at the same time, prevent the separated gas injection unit from being contaminated.
[0061] Additionally, the control unit (600) can control an MFC (not shown) installed in each of the plurality of process gas supply lines and an MFC installed in each of the plurality of purge gas supply lines so that the flow rate of process gas injected from the plurality of process gas injection units (210, 220, 230, 240) is less than or equal to the flow rate of purge gas injected from the plurality of purge gas injection units (280a, 280b, 280c, 280d). At this time, if it is necessary to increase the flow rate of the purge gas according to the characteristics of the process gas, the control unit (600) can control the mass flow controller (MFC) installed in each of the first to fifth separation gas supply lines (271, 272, 273, 274, 275) to increase the flow rate of the separation gas injected from the plurality of separation gas injection units (260a, 260b, 260c, 260d, 260e) by the increased flow rate of the purge gas.
[0062] A substrate support (300) may be placed inside the processing space (110) of the process chamber (100). For example, the substrate support (300) may be placed in the lower region of the processing space (110). The substrate support (300) may support a plurality of substrates loaded into the process chamber (100).
[0063] The substrate support (300) may include a susceptor (310), a rotation shaft (320), and a plurality of substrate support modules (400). The susceptor (310) may have a roughly disc shape, but is not limited thereto. The rotation shaft (320) is connected to the center of the lower surface of the susceptor (310) to rotate the susceptor (310). That is, the substrate support (300), specifically the susceptor (310), may be rotated around the rotation shaft (320). The rotation shaft (320) may be rotated, for example, in a clockwise direction.
[0064] A plurality of substrate support modules (400) may be mounted in pockets of the substrate support (300). For example, the substrate support modules (400) may be positioned on the upper part of the substrate support (300) so as to face each of the first to fourth process gas injection units (210, 220, 230, 240) during the process. Additionally, the substrate support modules (400) may be provided in a number corresponding to the first to fourth process gas injection units (210, 220, 230, 240).
[0065] In an embodiment, the processing space (110) includes first to fourth sub-process areas (A11, A12, A21, A22), and when first to fourth process gas injection units (210, 220, 230, 240) are disposed in the first to fourth sub-process areas (A11, A12, A21, A22), first to fourth substrate support modules (400-1, 400-2, 400-3, 400-4) may be provided on a susceptor (310) to face the first to fourth process gas injection units (210, 220, 230, 240). The first to fourth substrate support modules (400-1, 400-2, 400-3, 400-4) can each rotate by means of floating gas supplied through the rotation axis (320) of the susceptor (310).
[0066] The heater unit (450) may be located inside the processing space (110) of the process chamber (100). The heater unit (450) may include a hollow (H1) into which a rotating shaft (320) is inserted, is located at the bottom of the susceptor (310), and can heat the susceptor (310) to a predetermined temperature.
[0067] The exhaust section (500) may include an exhaust line (530), a valve (V), and a vacuum pump (140). The exhaust line (530) may connect the vacuum pump (540) to the inside of the process chamber (100), the processing space (110). The vacuum pump (140) provides a vacuum to the processing space (110) to control the vacuum level of the processing space (110) and to discharge process gases and reaction byproducts from the processing space (110). The valve (V) is located in the exhaust line (530) and may be a throttle valve that controls the vacuum level of the processing space (110) according to the opening rate.
[0068] At least one exhaust unit (500) may be provided in the process chamber (110), and in some cases, a remote plasma device may be further provided.
[0069] The control unit (600) can control the operation of the gas injection structure (200) and the substrate support (300) for the substrate processing process. The control unit (260) can control each configuration of the substrate processing device (10) to implement a spatiotemporal division method in which a spatial division method and a time division method are fused, using the ALD method.
[0070] As an example, the control unit (600) can control the first to fourth process gas supply blocks (250a, 250b, 250c, 250d) to control the types of process gas and reaction gas provided through the first to fourth process gas injection units (210, 220, 230, 240).
[0071] Additionally, the control unit (600) can control the flow rate of the separated gas injected from each of the first to fifth separated gas injection units (260a, 260b, 260c, 260d, 260e) by controlling an MFC (not shown) installed on the first to fifth separated gas supply lines (271, 272, 273, 274, 275) connecting the separated gas supply block (270) and the plurality of separated gas injection units (260a, 260b, 260c, 260d, 260e). Additionally, the control unit (600) can control the flow rate of purge gas injected from the plurality of purge gas injection units (280a, 280b, 280c, 280d) by controlling an MFC (not shown) installed on the plurality of purge gas lines connecting the purge gas supply block (290) and the plurality of purge gas injection units (280a, 280b, 280c, 280d).
[0072] Additionally, the control unit (600) can control the rotation angle (e.g., rotation and stop operation) of the substrate support (300), i.e., the susceptor (310), to determine the position and process gas injection time so that the first to fourth substrates (S1, S2, S3, S4) face the first to fourth process gas injection units (210, 220, 230, 240) simultaneously or sequentially. Furthermore, the purge process time can be controlled by adjusting the rotation speed of the substrate support (300).
[0073] More specifically, in order to implement a spatiotemporal division method, the control unit (600) may stop the substrate support (300) when process gas for substrate processing is sprayed onto the first to fourth substrates (S1, S2, S3, S4), and may rotate the substrate support (300) when changing the type of gas sprayed onto the first to fourth substrates (S1, S2, S3, S4) or when performing a purge process.
[0074] FIG. 4 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. In describing the substrate processing method according to the present embodiment with reference to FIG. 4, at least one of FIG. 1 to FIG. 3 may be referenced.
[0075] A substrate processing method according to the present embodiment can be performed using a substrate processing apparatus (10, see FIG. 1) comprising at least two process regions (A1, A2, see FIG. 2) each having at least two sub-process regions (A11, A12, A21, A22, see FIG. 2), first and second main separation gas injection units (260a and 260b, see FIG. 2) for injecting separation gas to distinguish the at least two process regions, and first and second sub-separation gas injection units (260c and 260d, see FIG. 2) for injecting separation gas to distinguish the at least two sub-process regions in each process region.
[0076] In step S410, separation gas can be injected from the first and second main separation gas injection units (260a and 260b) for separating each process area (A1, A2) and the first and second sub-separation gas injection units (260c and 260d) for separating two sub-process areas (A11, A12, A21, A22) in each process area (A1, A2) to make the first to fourth sub-process areas (A11, A12, A21, A22) independent process areas. At this time, the flow rate of the separation gas injected from the first and second main separation gas injection units (260a and 260b) and the flow rate of the separation gas injected from the first and second sub-separation gas injection units (260c and 260d) may be different from each other. In the embodiment, the flow rate of the separated gas injected from the first and second sub-separation gas injection units (260c and 260d) may be less than or equal to the flow rate of the separated gas injected from the first and second main separation gas injection units (260a and 260b).
[0077] Additionally, the substrate processing device (10) may further include a central separation gas injection unit (260e, see FIG. 2) located in the center where the first and second main separation gas injection units (260a and 260b) and the first and second sub-separation gas injection units (260c and 260d) are connected to each other. In step S410, the central separation gas injection unit (260e) may inject separation gas into the central area where the first to fourth sub-process areas (A11, A12, A21, A22) are connected to each other. In an embodiment, the flow rate of the separation gas injected from the central separation gas injection unit (260e) may be greater than or equal to the flow rate of the separation gas injected from the first and second main separation gas injection units (260a and 260b).
[0078] In the substrate processing method according to the present embodiment, step S410 can be continuously performed until a thin film of a desired thickness is formed on the substrate and the substrate processing process is completed.
[0079] In step S420, process gas can be injected into two sub-process areas of each process area (A1, A2), namely, the first to fourth sub-process areas (A11, A12, A21, A22). For example, the process gas can be injected into the substrate through the first to fourth process gas injection units (210, 220, 230, 240, see FIG. 2) corresponding to each sub-process area (A11, A12, A21, A22). At this time, purge gas can be injected into the surface of the susceptor (310) outside the substrate from the first to fourth purge gas injection units (280a, 280b, 280c, 280d, see FIG. 2) arranged to surround each of the first to fourth process gas injection units (210, 220, 230, 240). For example, the flow rate of process gas injected from the first to fourth process gas injection units (210, 220, 230, 240) may be less than or equal to the flow rate of purge gas injected from the first to fourth purge gas injection units (280a, 280b, 280c, 280d). Additionally, the flow rate of purge gas injected from the first to fourth purge gas injection units (280a, 280b, 280c, 280d) may be less than or equal to the flow rate of separation gas injected from a plurality of separation gas injection units (260a to 260e, see FIG. 2). When the injection of process gas through the first to fourth process gas injection units (210, 220, 230, 240) is completed, the process may proceed to step S430.
[0080] In step S430, purge gas can be injected into two sub-process areas of each process area (A1, A2), namely the first to fourth sub-process areas (A11, A12, A21, A22). For example, the purge gas in this step can be injected into the substrate through the first to fourth process gas injection units (210, 220, 230, 240). At this time, the purge gas can be injected from the first to fourth purge gas injection units (280a, 280b, 280c, 280d) to the surface of the susceptor (310) outside the substrate. When the injection of purge gas through the first to fourth process gas injection units (210, 220, 230, 240) is completed, the process can proceed to step S440.
[0081] In step S440, a substrate support (300, see FIG. 3) can be rotated to move a substrate placed in two sub-process areas of each process area (A1, A2), namely the first to fourth sub-process areas (A11, A12, A21, A22), to the next sub-process area. Once the rotation of the substrate support (300) is completed, the process can proceed to step S450.
[0082] In step S450, it can be determined whether the thickness of the thin film formed on the substrate has reached a desired (or set) thickness. For example, the thickness of the thin film formed on the substrate can be measured using various sensors, and the control unit (600, see FIG. 1) can calculate the thickness of the thin film formed on the substrate based on the values measured through the various sensors. If it is determined that the thickness of the thin film formed on the substrate has not reached the desired (or set) thickness (No), the process can proceed to steps S410 and S420. Additionally, if it is determined that the thickness of the thin film formed on the substrate has reached the desired (or set) thickness (Yes), the process, i.e., the substrate processing process, can be terminated.
[0083] Embodiments of the present invention can be usefully utilized in a substrate processing apparatus that performs substrate processing processes, such as deposition, etching, and cleaning processes, on a substrate (or wafer).
Claims
1. A process chamber comprising at least two process regions, each having at least two sub-process regions; A substrate support comprising a plurality of substrate support modules spaced apart at regular intervals so that at least one substrate can be positioned in each of the two sub-process areas of each process area, and configured to be rotatable to move the plurality of substrate support modules to the next sequence of sub-process areas; A gas injection structure configured to include a plurality of process gas injection units positioned at the upper part of the process chamber so as to face the substrate support and injecting process gas toward an opposing substrate support module, first and second main separation gas injection units positioned between the plurality of process gas injection units and injecting separation gas to distinguish the at least two process regions, and first and second sub-separation gas injection units injecting separation gas to distinguish the at least two sub-process regions in each process region; and A control unit that controls the gas injection structure so that the first and second main separation gas injection units and the first and second sub-separation gas injection units inject separation gases of different flow rates while the substrate processing process is performed within the process chamber. A substrate processing device including 2. In Paragraph 1, A substrate processing device in which the flow rate of the separation gas injected from the first and second sub-separation gas injection units is less than or equal to the flow rate of the separation gas injected from the first and second main separation gas injection units.
3. In Paragraph 1, The above gas injection structure is, It further includes a central separation gas injection unit located at the center where the first and second main separation gas injection units and the first and second sub-separation gas injection units are connected to each other. A substrate processing device in which the flow rate of the separation gas injected from the central separation gas injection unit is greater than or equal to the flow rate of the separation gas injected from the first and second main separation gas injection units.
4. In Paragraph 1, The above gas injection structure further comprises a plurality of purge gas injection units arranged around the process gas injection unit installed within each of the at least two sub-process areas of the at least two process areas and injecting purge gas introduced from the outside.
5. In Paragraph 4, A substrate processing device in which the flow rate of the purge gas injected from the plurality of purge gas injection units is less than or equal to the flow rate of the separation gas injected from the plurality of separation gas injection units.
6. In Paragraph 4, A substrate processing apparatus in which the flow rate of the process gas injected from the plurality of process gas injection units is less than or equal to the flow rate of the purge gas injected from the plurality of purge gas injection units.
7. A substrate processing method using a substrate processing apparatus comprising at least two process regions each having at least two sub-process regions, and first and second main separation gas injection units for injecting separation gas to distinguish the at least two process regions, and first and second sub-separation gas injection units for injecting separation gas to distinguish the at least two sub-process regions in each process region, wherein A first step of injecting process gas into each of the at least two sub-process regions of each of the above process regions; A second step of injecting purge gas into each of the at least two sub-process regions of each process region when the injection of the process gas is completed; and A third step of moving a substrate placed in at least two sub-process areas of each of the above process areas to a sub-process area in the next order. Includes, The first to third steps are repeatedly performed until the formation of a desired thin film on the substrate is completed, and A substrate processing method in which, while repeatedly performing the first to third steps, the first and second main separation gas injection units and the first and second sub-separation gas injection units inject separation gases of different flow rates.
8. In Paragraph 7, A substrate processing method in which the flow rate of the separated gas injected from the first and second sub-separation gas injection units is less than or equal to the flow rate of the separated gas injected from the first and second main separation gas injection units.
9. In Paragraph 7, The above substrate processing device further includes a central separation gas injection unit located at the center where the first and second main separation gas injection units and the first and second sub-separation gas injection units are connected to each other. A substrate processing method in which, while repeatedly performing the first to third steps, the flow rate of the separation gas injected from the central separation gas injection unit is greater than or equal to the flow rate of the separation gas injected from the first and second main separation gas injection units.
10. In Paragraph 9, A substrate processing method in which the flow rate of the purge gas is less than or equal to the flow rate of the separation gas injected from the first and second main separation gas injection units, the first and second sub-separation gas injection units, and the central separation gas injection unit.
11. In Paragraph 7, A substrate processing method in which the flow rate of the above process gas is less than or equal to the flow rate of the above purge gas.