Lithium aluminosilicate-based crystallized glass for semiconductor and method for manufacturing same

Lithium aluminosilicate-based crystallized glass with controlled thermal expansion and mechanical properties addresses the limitations of conventional semiconductor packaging materials, facilitating precise microfabrication and reducing breakage risks, suitable for semiconductor glass substrates and EUV reflectors.

WO2026147023A1PCT designated stage Publication Date: 2026-07-09HAAS CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
HAAS CO LTD
Filing Date
2025-12-18
Publication Date
2026-07-09

AI Technical Summary

Technical Problem

Conventional semiconductor packaging materials face limitations such as low mechanical strength, high thermal expansion, and high insertion loss, which hinder the achievement of nano-level linewidths and ultra-fine circuit processing, especially in applications requiring ultra-low thermal expansion optical materials for EUV lithography.

Method used

Development of lithium aluminosilicate-based crystallized glass with a specific composition and manufacturing process, including heat treatments, to achieve a low coefficient of thermal expansion and excellent mechanical properties, incorporating crystalline phases like lithium metasilicate, lithium disilicate, and SiO2-quartz within an amorphous glass matrix.

Benefits of technology

The lithium aluminosilicate-based crystallized glass exhibits a low coefficient of thermal expansion (6.8 × 10⁻⁶ to 8 × 10⁻⁶ /K) and superior mechanical properties, suitable for semiconductor glass substrates, enabling precise microfabrication and reducing the risk of breakage during handling and processing.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure KR2025022201_09072026_PF_FP_ABST
    Figure KR2025022201_09072026_PF_FP_ABST
Patent Text Reader

Abstract

The present invention provides a lithium aluminosilicate-based crystallized glass for a semiconductor, comprising a crystalline phase in an amorphous glass matrix, wherein the glass matrix comprises 75.0 to 80.0 wt% of SiO2, 7.0 to12.0 wt% of Li2O, 2.0 to 7.0 wt% of Al2O3, 0.1 to 2.5 wt% of K2O, 0.01 to 1.0 wt% of Na2O, 0.005 to 0.2 wt% of Ag2O, 0.0025 to 0.1 wt% of CeO2, 0.2 to 5.0 wt% of at least one divalent metal oxide represented by MO (where M is Ca, Mg, Sr, Zn or Ba), and 0.02 to 1.0 wt% of a clarifying agent, and the weight ratio of SiO2 / (SiO2+Al2O3) satisfies 0.915 to 0.976. By having a low coefficient of thermal expansion, the lithium aluminosilicate-based crystallized glass has high material versatility, not only as a semiconductor glass substrate but also for applications such as biochips, various sensor components, prove unit / card filters, lab-on-chips, or reflectors for EUV.
Need to check novelty before this filing date? Find Prior Art