Semiconductor Light-Emitting Element

A light-emitting device, semiconductor technology, applied in the direction of semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of poor current expansion and so on

CN104011887AInactive Publication Date: 2014-08-27SEMICON LIGHT
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2014-08-27
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer into a light of a second wavelength; and a non-conductive reflective film formed on the second semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the side of the growth substrate, with the non-conductive reflective film having a distributed bragg reflector designed based on the light converted by the phosphor part.
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Description

technical field

[0001] The disclosure generally relates to semiconductor light emitting devices, and more particularly, to a semiconductor light emitting device having a light reflecting surface.

[0002] In the context of this document, the term "semiconductor light emitting device" refers to a semiconductor optical device that generates light via electron-hole recombination, and one example is a Group III nitride semiconductor light emitting device. Group III nitride semiconductors are composed of Al( x )Ga( y )In (1-x-y) N (wherein, 0≤x≤1, 0≤y≤1, 0≤x+y≤1) compound composition. Another example thereof is a GaAs-based semiconductor light emitting device for red light emission. Background technique

[0003] This section provides background information related to the present disclosure which is not necessarily prior art.

[0004] figure 1 is an example illustrating a semiconductor light emitting device proposed in US Patent No. 7,262,436. The semiconductor light emitti...

Examples

Embodiment Construction

[0058] Now, the present disclosure will be described in detail with reference to the accompanying drawings.

[0059] Figure 3 to Figure 5 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure, in which, image 3 is along Figure 4 The cross-sectional view taken by the line A-A, while Figure 5 is along Figure 4 A cross-sectional view taken along the line B-B. For the sake of illustration, in Figure 4 The non-conductive reflective film 91 and the electrode 92 are not shown.

[0060] The semiconductor light emitting device comprises: a substrate 10; a buffer layer 20 grown on the substrate 10; an n-type semiconductor layer 30 grown on the buffer layer 20; an active layer grown on the n-type semiconductor layer 30, via electron- hole recombination to generate light; and p-type semiconductor layer 50 grown on active layer 40 . The substrate 10 which can be finally removed is mainly made of sapphire, SiC, Si, GaN...