Semiconductor Light-Emitting Element
A light-emitting device, semiconductor technology, applied in the direction of semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of poor current expansion and so on
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2014-08-27
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The disclosure generally relates to semiconductor light emitting devices, and more particularly, to a semiconductor light emitting device having a light reflecting surface.
[0002] In the context of this document, the term "semiconductor light emitting device" refers to a semiconductor optical device that generates light via electron-hole recombination, and one example is a Group III nitride semiconductor light emitting device. Group III nitride semiconductors are composed of Al( x )Ga( y )In (1-x-y) N (wherein, 0≤x≤1, 0≤y≤1, 0≤x+y≤1) compound composition. Another example thereof is a GaAs-based semiconductor light emitting device for red light emission. Background technique
[0003] This section provides background information related to the present disclosure which is not necessarily prior art.
[0004] figure 1 is an example illustrating a semiconductor light emitting device proposed in US Patent No. 7,262,436. The semiconductor light emitti...
Examples
Embodiment Construction
[0058] Now, the present disclosure will be described in detail with reference to the accompanying drawings.
[0059] Figure 3 to Figure 5 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure, in which, image 3 is along Figure 4 The cross-sectional view taken by the line A-A, while Figure 5 is along Figure 4 A cross-sectional view taken along the line B-B. For the sake of illustration, in Figure 4 The non-conductive reflective film 91 and the electrode 92 are not shown.
[0060] The semiconductor light emitting device comprises: a substrate 10; a buffer layer 20 grown on the substrate 10; an n-type semiconductor layer 30 grown on the buffer layer 20; an active layer grown on the n-type semiconductor layer 30, via electron- hole recombination to generate light; and p-type semiconductor layer 50 grown on active layer 40 . The substrate 10 which can be finally removed is mainly made of sapphire, SiC, Si, GaN...