Semiconductor Light-Emitting Element

Abstract

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer into a light of a second wavelength; and a non-conductive reflective film formed on the second semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the side of the growth substrate, with the non-conductive reflective film having a distributed bragg reflector designed based on the light converted by the phosphor part.

Description

technical field [0001] The disclosure generally relates to semiconductor light emitting devices, and more particularly, to a semiconductor light emitting device having a light reflecting surface. [0002] In the context of this document, the term "semiconductor light emitting device" refers to a semiconductor optical device that generates light via electron-hole recombination, and one example is a Group III nitride semiconductor light emitting device. Group III nitride semiconductors are composed of Al( x )Ga( y )In (1-x-y) N (wherein, 0≤x≤1, 0≤y≤1, 0≤x+y≤1) compound composition. Another example thereof is a GaAs-based semiconductor light emitting device for red light emission. Background technique [0003] This section provides background information related to the present disclosure which is not necessarily prior art. [0004] figure 1 is an example illustrating a semiconductor light emitting device proposed in US Patent No. 7,262,436. The semiconductor light emitti...

Images