Light-emitting components

Abstract

Provided is a light-emitting element. The light-emitting element includes: a first light-emitting portion, including a first n-type semiconductor layer, a first active layer, a first p-type semiconductor layer, and a first transparent electrode; a second light-emitting portion, including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode; a third light-emitting portion, including a third n-type semiconductor layer, a third active layer, a third p-type semiconductor layer, and a third transparent electrode; a first bonding layer, bonding the first light-emitting portion and the second light-emitting portion between the first light-emitting portion and the second light-emitting portion, and having a first connection pattern with bonding and conductivity; and a second bonding layer, bonding the second light-emitting portion and the third light-emitting portion between the second light-emitting portion and the third light-emitting portion, and having a second connection pattern with bonding and conductivity, wherein the third light-emitting portion has a mesa structure exposing a portion of the second connection pattern of the second bonding layer.

Description

Technical Field

[0001] The present invention relates to a light-emitting element, and more particularly, to a light-emitting element having a plurality of light-emitting layers stacked on top of each other. Background Art

[0002] As an inorganic light source, light-emitting diodes are widely used in various fields such as display devices, vehicle lights, and general lighting. Due to the advantages of long life, low power consumption, and fast response speed, light-emitting diodes are rapidly replacing existing light sources.

[0003] In particular, display devices generally use a mixture of blue, green and red to present multiple colors. Each pixel of the display device is equipped with blue, green and red sub-pixels, and the color of a specific pixel is determined by the colors of these sub-pixels. The combination of these pixels presents an image.

[0004] Light emitting diodes are mainly used as backlight sources in display devices. However, micro LEDs are being developed as next-generation displays that directly display images using light emitting diodes. Summary of the invention

[0005] Technical issues

[0006] The problem that the present invention hopes to solve is to provide a light-weight, thin and miniaturized light-emitting element.

[0007] The problems that the present invention is intended to solve are not limited to the problems mentioned above, and those skilled in the art can clearly understand other problems not mentioned through the following description.

[0008] Technical Solution

[0009] In order to achieve the desired problem, a light-emitting element according to an embodiment of the present invention includes: a first light-emitting portion, including a first n-type semiconductor layer, a first active layer, a first p-type semiconductor layer and a first transparent electrode; a second light-emitting portion, arranged on the first light-emitting portion, and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer and a second transparent electrode; a third light-emitting portion, arranged on the second light-emitting portion, and including a third n-type semiconductor layer, a third active layer, a third p-type semiconductor layer and a third transparent electrode; a first bonding layer, bonding the first light-emitting portion and the second light-emitting portion between the first light-emitting portion and the second light-emitting portion, and having a first connection pattern with bonding and conductivity; and a second bonding layer, bonding the second light-emitting portion and the third light-emitting portion between the second light-emitting portion and the third light-emitting portion, and having a second connection pattern with bonding and conductivity, wherein the third light-emitting portion has a mesa structure exposing a portion of the second connection pattern of the second bonding layer.

[0010] According to an embodiment, the light emitting element may further include: a common electrode pad electrically connected to the first transparent electrode to the third transparent electrode; a first electrode pad electrically connected to the first n-type semiconductor layer; a second electrode pad electrically connected to the second n-type semiconductor layer; and a third electrode pad electrically connected to the third n-type semiconductor layer.

[0011] According to an embodiment, the first light-emitting portion and the second light-emitting portion may respectively have a quadrilateral structure on a plane, having first to fourth regions corresponding to first to fourth corners of the light-emitting element, and the third light-emitting portion has a quadrilateral structure on a plane, and has a structure in which portions corresponding to the second and third corners are cut.

[0012] According to an embodiment, the second connection patterns exposed by the third light emitting portion may be exposed at positions corresponding to the second corner and the third corner, respectively.

[0013] According to an embodiment, the first electrode pad may be arranged between an outer side wall of the third light emitting portion and an outer side wall of the second light emitting portion, and the second electrode pad may be arranged between an outer side wall of the third light emitting portion and an outer side wall of the second light emitting portion.

[0014] According to an embodiment, a distance of the third light emitting portion between the second corner and the third corner may be smaller than a distance of the third light emitting portion including the first corner and the fourth corner.

[0015] According to an embodiment, the light emitting element may further include: a first through structure electrically connecting the first transparent electrode to the third transparent electrode to the common electrode pad respectively; a second through structure electrically connecting the first n-type semiconductor layer and the first electrode pad; and a third through structure electrically connecting the second n-type semiconductor layer and the second electrode pad.

[0016] According to an embodiment, the first through structure may include: a first through pattern electrically connecting the first transparent electrode and the first connection pattern; a second through pattern electrically connecting the second transparent electrode and the second connection pattern; and a third through pattern electrically connecting the third transparent electrode and the common electrode pad.

[0017] According to an embodiment, the first through structure may further include: a fourth through pattern electrically connecting the second connection pattern and the third transparent electrode, the second connection pattern electrically connecting the second through pattern and the fourth through pattern between the second through pattern and the fourth through pattern, and the first connection pattern electrically connecting the first through pattern and the second transparent electrode between the first through pattern and the second transparent electrode.

[0018] According to an embodiment, the light emitting element may further include: a first insulating film surrounding an outer sidewall of the second through pattern and extending onto the second n-type semiconductor layer; and a second insulating film surrounding an outer sidewall of the third through pattern.

[0019] According to an embodiment, the first through pattern includes an upper portion having a wider width than a lower portion, and the first connection pattern may be connected to the upper portion.

[0020] According to an embodiment, the second through structure may include: a first through pattern electrically connecting the first n-type semiconductor layer and the first connection pattern; a second through pattern electrically connecting the first connection pattern and the second connection pattern; and a third through pattern electrically connecting the second connection pattern and the first electrode pad.

[0021] According to an embodiment, the third permeation pattern may be disposed between an outer side wall of the second light emitting portion and an outer side wall of the third light emitting portion.

[0022] According to an embodiment, the light emitting element may further include: a passivation film arranged to surround the third through pattern on the second connection pattern and having an upper surface on the same plane as an upper surface of the third n-type semiconductor layer.

[0023] According to an embodiment, the first connection pattern may have an extending portion extending toward an outer side of the first through pattern, and the second through pattern may be connected to the extending portion of the first connection pattern.

[0024] According to an embodiment, a first vertical central axis passing through a center of the first through pattern may be spaced apart from a second vertical central axis passing through a center of the second through pattern in a horizontal direction.

[0025] According to an embodiment, the third through structure may include: a first through pattern electrically connecting the second n-type semiconductor layer and the second connection pattern; and a second through pattern electrically connecting the second connection pattern and the second electrode pad.

[0026] According to an embodiment, the second permeation pattern may be disposed between an outer side wall of the third light emitting portion and an outer side wall of the second light emitting portion.

[0027] According to an embodiment, the light emitting element may further include: a passivation film surrounding the second through pattern on the second connection pattern and having an upper surface on the same plane as an upper surface of the third n-type semiconductor layer.

[0028] According to an embodiment, the light emitting element may further include: a first color filter disposed between the first transparent electrode and the first bonding layer; and a second color filter disposed between the second bonding layer and the third transparent electrode.

[0029] According to an embodiment, the first color filter and the second color filter may respectively have at least one through hole for providing an electrical path.

[0030] According to an embodiment, the first connection pattern and the first adhesive layer may be located at the same height, and the second connection pattern and the second adhesive layer may be located at the same height.

[0031] Details of other embodiments are included in the detailed description and drawings.

[0032] Technical Effects

[0033] According to the light-emitting element of the embodiment of the present invention, the first to third light-emitting parts are electrically connected to the common electrode pad, the first electrode pad, the second electrode pad and the third electrode pad by using the through pattern that penetrates the first light-emitting part, the second light-emitting part and the third light-emitting part and the connection pattern arranged in the first bonding layer and the second bonding layer, so it can have a wider light-emitting area compared to the case where the first to third light-emitting parts are formed in a mesa structure respectively. In addition, since the difficulty of the process is lower than the case where the first to third light-emitting parts are electrically connected at one time instead of the through pattern and the connection pattern to the common electrode pad, the first electrode pad, the second electrode pad and the third electrode pad, the process can be performed more easily. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1a and Figure 1b FIG. 1 is a plan view for explaining a light emitting element according to an embodiment of the present invention.

[0035] Figure 1c and Figure 1d Yes Figure 1a A cross-sectional view of the light-emitting element taken along line AA'.

[0036] Figure 2 is a cross-sectional view for explaining a light emitting element according to another embodiment of the present invention.

[0037] Figure 3 is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention.

[0038] Figures 4 to 19 It is a cross-sectional view for explaining a method for manufacturing a light emitting element according to an embodiment of the present invention.

[0039] Preferred Embodiments

[0040] In order to fully understand the configuration and effects of the present invention, preferred embodiments of the present invention are described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms and can be modified in various ways.

[0041] And, the terms used in the embodiments of the present invention may be construed as meanings commonly known to those skilled in the art unless otherwise defined.

[0042] Hereinafter, a light emitting element according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0043] Figure 1a and Figure 1b is a plan view for explaining a light emitting element according to an embodiment of the present invention, Figure 1c Yes Figure 1a A cross-sectional view of the light-emitting element taken along line AA'.

[0044] Reference Figure 1a to Figure 1c The light emitting element may include a first light emitting portion LE1 , a second light emitting portion LE2 , and a third light emitting portion LE3 vertically stacked on the substrate 100 .

[0045] The substrate 100, as a substrate 100 on which a gallium nitride semiconductor layer can be grown, may include sapphire (Al2O3), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium oxide (Ga2O3) or silicon. Furthermore, the substrate 100 may be a patterned sapphire substrate.

[0046] One side of the substrate 100 is in contact with the first light-emitting part LE1, and the other side facing the side can be a light extraction surface of the light-emitting element. Optionally, the substrate 100 can be removed. In this case, the side of the first light-emitting part LE1 facing the substrate 100 can be a light extraction surface of the light-emitting element. In the case where the light extraction surface is the other side of the substrate 100 or the side of the first light-emitting part LE1, the wavelength of the first light-emitting part LE1 can be the shortest, the wavelength of the second light-emitting part LE2 is longer than the wavelength of the first light-emitting part LE1 and shorter than the wavelength of the third light-emitting part LE3, and the wavelength of the third light-emitting part LE3 is the longest. For example, the first light-emitting part LE1 can emit blue light, the second light-emitting part LE2 can emit green light, and the third light-emitting part LE3 can emit red light. However, the present invention is not limited to this. For example, the first light-emitting part LE1 can emit light with a longer wavelength than the second light-emitting part LE2 or the third light-emitting part LE3, and the second light-emitting part LE2 can also emit light with a longer wavelength than the third light-emitting part LE3. For example, the first light emitting portion LE1 may emit green light, the second light emitting portion LE2 may emit blue light, and the third light emitting portion LE3 may emit red light.

[0047] The substrate 100 has a quadrilateral structure in a plane, and the corners of the quadrilateral structure are respectively referred to as the first area AR1, the second area AR2, the third area AR3 and the fourth area AR4. The first light-emitting portion LE1 and the second light-emitting portion LE2 may have a light-emitting area of ​​substantially the same size and a similar stacked structure, and the third light-emitting portion LE3 may have a light-emitting area smaller than the light-emitting area of ​​the first light-emitting portion LE1 or the second light-emitting portion LE2. The transparent electrode 108 of the first light-emitting portion LE1 and the transparent electrode 208 of the second light-emitting portion LE2 may have areas of different sizes from each other. The third light-emitting portion LE3 may have a mesa structure in which the corners of the second area AR2 and the third area AR3 are etched respectively. The third light-emitting portion has a mesa structure in which the second area AR2 and the third area AR3 are cut, so in a plane viewing angle, the area of ​​the third light-emitting portion LE3 may be smaller than the area of ​​the first light-emitting portion LE1 and the area of ​​the second light-emitting portion LE2. In addition, the etched side of the third light-emitting portion LE3 may have an inclined side.

[0048] according to Figure 1a In the illustrated embodiment, in the third light emitting portion LE3, the second area AR2 and the third area AR3 may be adjacent corners. The distance DT1 of the third light emitting portion LE3 between the second area AR2 and the third area AR3 may be shorter than the distance DT2 of the third light emitting portion LE3 including the first area AR1 and the fourth area AR4. At this time, the distance DT1 of the third light emitting portion LE3 between the second area AR2 and the third area AR3 and the distance DT2 of the third light emitting portion LE3 including the first area AR1 and the fourth area AR4 are defined as the shortest distance.

[0049] according to Figure 1b In the illustrated embodiment, in the third light-emitting portion LE3, the second area AR2 and the third area AR3 may be corners facing each other. The distance DT1 of the third light-emitting portion LE3 between the second area AR2 and the third area AR3 may be shorter than the diagonal distance DT2 of the third light-emitting portion LE3 including the first area AR1 and the fourth area AR4. At this time, the distance DT1 of the third light-emitting portion LE3 between the second area AR2 and the third area AR3 and the diagonal distance DT2 of the third light-emitting portion LE3 including the first area AR1 and the fourth area AR4 are defined as the shortest distance.

[0050] According to one embodiment, in the second area AR2 and the third area AR3, the outer sidewall of the third light emitting portion LE3 may be arranged inside the third light emitting portion LE3 than the outer sidewall of the second light emitting portion LE2. That is, in the second area AR2 and the third area AR3, the fifth connection pattern 314 and the sixth connection pattern 316 to be described later may be exposed through the outer sidewall of the third light emitting portion LE3.

[0051] The first light emitting portion LE1 may include a first n-type semiconductor layer 102, a first active layer 104, a first p-type semiconductor layer 106, and a first transparent electrode 108 stacked vertically. The second light emitting portion LE2 may include a second transparent electrode 208, a second p-type semiconductor layer 206, a second active layer 204, and a second n-type semiconductor layer 202 stacked in sequence. The third light emitting portion LE3 may include a third transparent electrode 308, a third p-type semiconductor layer 306, a third active layer 304, and a third n-type semiconductor layer 302 stacked in sequence.

[0052] According to one embodiment, the first n-type semiconductor layer 102, the second n-type semiconductor layer 202, and the third n-type semiconductor layer 302 may be GaN-based semiconductor layers doped with Si, respectively. The first p-type semiconductor layer 106, the second p-type semiconductor layer 206, and the third p-type semiconductor layer 306 may be GaN-based semiconductor layers doped with magnesium (Mg), respectively. The first active layer 104, the second active layer 204, and the third active layer 304 may include a multi quantum well (MQW) structure, and may emit light of a desired peak wavelength by determining their composition ratios. The first transparent electrode 108, the second transparent electrode 208 and the third transparent electrode 308 can be respectively composed of transparent oxide layers such as zinc oxide (ZnO: Zinc Oxide), indium tin oxide (ITO: Indium Tin Oxide), zinc-doped indium tin oxide (ZITO: Zinc-doped Indium Tin Oxide), gallium indium oxide (GIO: Gallium Indium Oxide), zinc tin oxide (ZTO: Zinc Tin Oxide), fluorine-doped tin oxide (FTO: Fluorine-doped Tin Oxide), gallium-doped zinc oxide (GZO: Gallium-doped Zinc Oxide), aluminum-doped zinc oxide (AZO: Aluminum-doped Zinc Oxide), etc.

[0053] The light emitting element may further include a common electrode pad CEL, a first electrode pad EL1, a second electrode pad EL2, and a third electrode pad EL3 arranged on the third light emitting portion LE3.

[0054] The common electrode pad CEL may be electrically connected to the first p-type semiconductor layer 106 of the first light emitting portion LE1, the second p-type semiconductor layer 206 of the second light emitting portion LE2, and the third p-type semiconductor layer 306 of the third light emitting portion LE3 in the first area AR1. The first electrode pad EL1 may be electrically connected to the first n-type semiconductor layer 102 of the first light emitting portion LE1 in the second area AR2. The second electrode pad EL2 may be electrically connected to the second n-type semiconductor layer 202 of the second light emitting portion LE2 in the third area AR3. The third electrode pad EL3 may be electrically connected to the third n-type semiconductor layer 302 of the third light emitting portion LE3 in the fourth area AR4.

[0055] Differently, the common electrode pad CEL of the first area AR1 may be electrically connected to the first n-type semiconductor layer 102 of the first light emitting portion LE1, the second n-type semiconductor layer 202 of the second light emitting portion LE2, and the third n-type semiconductor layer 302 of the third light emitting portion LE3. The first electrode pad EL1 of the second area AR2 may be electrically connected to the first p-type semiconductor layer 106 of the first light emitting portion LE1, the second electrode pad EL2 of the third area AR3 may be electrically connected to the second p-type semiconductor layer 206 of the second light emitting portion LE2, and the third electrode pad EL3 of the fourth area AR4 may be electrically connected to the third p-type semiconductor layer 306 of the third light emitting portion LE3.

[0056] A passivation film PA may be provided on the second light emitting portion LE2 to cover the portions of the third light emitting portion LE3 where the corners of the second region AR2 and the corners of the third region AR3 are removed. The passivation film PA may include SiO2, Al2O3, Si3N4, silicon-glass bonding structure material (SOG: Silicon On Glass), epoxy resin, polyimide, photoresist (SU8) or benzocyclobutene (BCB: benzo cyclo butene), etc. In particular, the passivation film PA may include an oxide film or a nitride film containing Si.

[0057] According to an embodiment, the light emitting element may further include a first color filter CF1, a first bonding layer AD1, and a second bonding layer AD2 arranged between the first light emitting portion LE1 and the second light emitting portion LE2, and may further include a second color filter CF2 and a third bonding layer AD3 arranged between the second light emitting portion LE2 and the third light emitting portion LE3. In a specific embodiment, the first color filter CF1 and the second color filter CF2 may be omitted. The first color filter CF1 is arranged adjacent to the first transparent electrode 108 of the first light emitting portion LE1, and a first bonding layer AD1 is arranged on the first color filter CF1. The first light emitting portion LE1 and the second light emitting portion LE2 may be bonded to each other by bonding the first bonding layer AD1 and the second bonding layer AD2. In addition, the second color filter CF2 is arranged adjacent to the third transparent electrode 308 of the third light emitting portion LE3, and the third bonding layer AD3 is bonded between the second light emitting portion LE2 and the second color filter CF2, so that the second light emitting portion LE2 and the third light emitting portion LE3 may be bonded to each other. Although not shown, a fourth bonding layer may also be provided between the second color filter CF2 and the third bonding layer AD3.

[0058] The first color filter CF1 and the second color filter CF2 may respectively include a distributed Bragg reflector (DBR) having a structure in which titanium dioxide (TiO2) and silicon dioxide (SiO2) are alternately stacked. As an example, the composition ratio of TiO2 and SiO2 and the order and number of alternate stacking of the first color filter CF1 and the second color filter CF2 may be different from each other. The first bonding layer AD1 and the second bonding layer AD2 are bonding layers that are electrically insulating and have light-transmitting properties, and may include, for example, SOG (Silicon On Glass), epoxy resin, polyimide, SU8 or benzo cyclo butene (BCB: benzo cyclo butene) and other materials.

[0059] The light emitting element may further include a first through structure TVP1 that electrically connects the first transparent electrode 108, the second transparent electrode 208, and the third transparent electrode 308 to the common electrode pad CEL in the first region AR1. The "first", "second", "third", "fourth", "fifth", "sixth", "seventh", "eighth" and "ninth" described below are only serial numbers used to distinguish patterns, and their description order may not be in order.

[0060] The first through structure TVP1 may include: through patterns 112, 214, 310 and 320, which respectively penetrate the first light-emitting portion LE1, the second light-emitting portion LE2, and the third light-emitting portion LE3 and are electrically connected to the first transparent electrode 108, the second transparent electrode 208, and the third transparent electrode 308; connecting patterns 116, 210, and 312, which respectively penetrate the first bonding layer AD1, the second bonding layer AD2, and the third bonding layer AD3, and are directly or indirectly electrically connected to the first transparent electrode 108, the second transparent electrode 208, and the third transparent electrode 308 through the through patterns 112, 214, 310, and 320.

[0061] According to one embodiment, the first through structure TVP1 may include: a first through pattern 112, which penetrates the first color filter CF1 and is in electrical contact with the first transparent electrode 108; a first connection pattern 116 and a third connection pattern 210, which penetrate the first adhesive layer AD1 and the second adhesive layer AD2 and electrically connect the first through pattern 112 and the second transparent electrode 208; a third through pattern 214, which penetrates the second p-type semiconductor layer 206, the second active layer 204 and the second n-type semiconductor layer 202 and is in electrical contact with the second transparent electrode 208; a fourth connection pattern 312, which penetrates the third adhesive layer AD3 and is in electrical contact with the third through pattern 214; a sixth through pattern 310, which penetrates the second color filter CF2 and electrically connects the fourth connection pattern 312 and the third transparent electrode 308; and a seventh through pattern 320, which penetrates the third p-type semiconductor layer 306, the third active layer 304 and the third n-type semiconductor layer 302 and electrically connects the third transparent electrode 308 and the common electrode pad CEL. According to an embodiment, the first color filter CF1 may be arranged to surround the outer sidewall of the first through pattern 112. The second color filter CF2 may be arranged to surround the outer sidewall of the sixth through pattern 310.

[0062] The first through pattern 112, the third through pattern 214, the sixth through pattern 310, and the seventh through pattern 320 of the first through structure TVP1 may include at least one selected from the group consisting of titanium (Ti), nickel (Ni), gold (Au), chromium (Cr), copper (Cu), titanium (Ti), tungsten (W), and molybdenum (Mo). The first connection pattern 116, the third connection pattern 210, and the fourth connection pattern 312 of the first through structure TVP1 have adhesive properties and may include a low melting point metal such as tin (Sn) and indium (In) having conductivity. At this time, in the case where the first connection pattern 116 and the third connection pattern 210 substantially include the same material, the first connection pattern 116 and the third connection pattern 210 may not be distinguished. In addition, the first through pattern 112, the third through pattern 214, and the seventh through pattern 320 may have a side surface that is narrower and inclined toward the lower part. In addition, the sixth through pattern 310 may have a side surface that is wider and inclined toward the lower part.

[0063] According to an embodiment, one side of the first through pattern 112 may be in electrical contact with the first transparent electrode 108, and the other side of the first through pattern 112 may be in electrical contact with the second transparent electrode 208 through the first connection pattern 116 and the third connection pattern 210. The second transparent electrode 208 may be in electrical contact with one side of the third through pattern 214, and the other side of the third through pattern 214 may be in electrical contact with the fourth connection pattern 312, and the fourth connection pattern 312 may be electrically connected to one side of the third transparent electrode 308 through the sixth through pattern 310. The other side of the third transparent electrode 308 may be in electrical contact with the common electrode pad CEL through the seventh through pattern 320. In this case, the first transparent electrode 108, the second transparent electrode 208 and the third transparent electrode 308 are not etched, but are electrically connected to each other through the through pattern and the connecting pattern that penetrate the first light-emitting portion LE1, the first bonding layer AD1, the second bonding layer AD2, the second light-emitting portion LE2, the third bonding layer AD3 and the third light-emitting portion LE3. Therefore, the contact area between the first transparent electrode 108, the second transparent electrode 208 and the third transparent electrode 308 and the through pattern or the connecting pattern can be increased to improve the electrical reliability of the light-emitting element.

[0064] In the first through structure TVP1, the first through pattern 112 may be arranged to be aligned with the first transparent electrode 108 of the first area AR1, and the first connection pattern 116 may be arranged to be aligned with the first through pattern 112. The third through pattern 214 may be arranged to be aligned with the second transparent electrode 208 of the first area AR1 and the first connection pattern 116. The fourth connection pattern 312 may be arranged to be aligned with the third through pattern 214, and the sixth through pattern 310 may be arranged to be aligned with the fourth connection pattern 312. The seventh through pattern 320 may be arranged to be aligned with the third transparent electrode 308 of the first area AR1 and to be aligned with the position where the common electrode pad CEL is to be formed.

[0065] In addition, the light emitting element may further include a second insulating layer 212 surrounding the outer sidewall of the third through pattern 214. The second insulating layer 212 may insulate the second n-type semiconductor layer 202, the second active layer 204, and the second p-type semiconductor layer 206 from the third through pattern 214. The second insulating layer 212 may include, for example, SiO2 or Si3N4, which has high light transmittance and electrical insulation properties. As shown in the figure, although the second insulating layer 212 may extend to the upper portion of the second n-type semiconductor layer 202, it may also have a structure that only surrounds the outer sidewall of the third through pattern 214.

[0066] In addition, the light emitting element may further include a third insulating layer 318 surrounding the outer sidewall of the seventh through pattern 320. The third insulating layer 318 may insulate the third n-type semiconductor layer 302, the third active layer 304, and the third p-type semiconductor layer 306 from the seventh through pattern 320. The third insulating layer 318 may include, for example, SiO2 or Si3N4, which has high light transmittance and electrical insulation properties. Although the third insulating layer 318 is shown as a structure surrounding only the outer sidewall of the seventh through pattern 320, the third insulating layer 318 may also have a structure extending to the upper portion of the third n-type semiconductor layer 302.

[0067] The light emitting element may further include a second through structure TVP2 electrically connected to the first n-type semiconductor layer 102 in the second region AR2 .

[0068] The second through structure TVP2 may include: through patterns 114, 216, 322, which are electrically connected to the first n-type semiconductor layer 102 of the first light-emitting portion LE1 and respectively penetrate the first light-emitting portion LE1, the second light-emitting portion LE2, and the third light-emitting portion LE3 and the first bonding layer AD1, the second bonding layer AD2, and the third bonding layer AD3; and connecting patterns 118, 314, which are electrically connected to the through patterns 114, 216, 322.

[0069] According to one embodiment, the second through structure TVP2 may include: a second through pattern 114 penetrating the first active layer 104, the first p-type semiconductor layer 106, the first transparent electrode 108 and the first color filter CF1 and electrically contacting the first n-type semiconductor layer 102; a second connection pattern 118 penetrating the first adhesive layer AD1 and electrically connected to the second through pattern 114; a fourth through pattern 216 penetrating the second adhesive layer AD2, the second transparent electrode 208, the second p-type semiconductor layer 206, the second active layer 204 and the second n-type semiconductor layer 202 and electrically contacting the second connection pattern 118; a fifth connection pattern 314 penetrating the third adhesive layer AD3 and electrically contacting the fourth through pattern 216; and an eighth through pattern 322 penetrating the third transparent electrode 308, the third p-type semiconductor layer 306, the third active layer 304, the third n-type semiconductor layer 302 and the passivation film PA and electrically connecting the fifth connection pattern 314 and the first electrode pad EL1. According to an embodiment, in the second area AR2 , the eighth through pattern 322 may be disposed between the outer sidewalls of the third light emitting portion LE3 and the second light emitting portion LE2 , and the first color filter CF1 may be disposed to surround the outer sidewall of the second through pattern 114 .

[0070] The second through pattern 114, the fourth through pattern 216, and the eighth through pattern 322 of the second through structure TVP2 may include at least one selected from the group consisting of Ti, Ni, Au, Cr, Cu, Ti, W, Mo, etc. The second connection pattern 118 and the fifth connection pattern 314 of the second through structure TVP2 may include a low melting point metal having bonding properties and conductivity, such as tin (Sn), indium (In), etc.

[0071] In the second through structure TVP2, the second through pattern 114 may be aligned with the first n-type semiconductor layer 102 of the second area AR2, and the second connection pattern 118 may be aligned with the second through pattern 114. The fourth through pattern 216 may be aligned with the second connection pattern 118, and the fifth connection pattern 314 may be aligned with the fourth through pattern 216. The eighth through pattern 322 may be arranged to be aligned with the fifth connection pattern 314 and to be aligned with the first electrode pad EL1.

[0072] according to Figure 1c In the illustrated embodiment, the second through pattern 114, the fourth through pattern 216, and the eighth through pattern 322 of the second through structure TVP2 may have inclined side surfaces that are narrower toward the bottom. Figure 1dIn the illustrated embodiment, the second through pattern 114, the fourth through pattern 216, and the eighth through pattern 322 of the second through structure TVP2 may have a stepped side surface with a narrower width toward the lower portion. As an example, the second through pattern 114 may include: a first portion, which penetrates the first active layer 104 and the first p-type semiconductor layer 106; a second portion, which has a width greater than the first portion and penetrates the first transparent electrode 108; and a third portion, which has a width greater than the second portion and penetrates the first color filter CF1. The fourth through pattern 216 may include: a first portion, which is arranged in the second adhesive layer AD2; a second portion, which has a width greater than the first portion and penetrates the second transparent electrode 208; and a third portion, which has a width greater than the second portion and penetrates the second p-type semiconductor layer 206, the second active layer 204, and the second n-type semiconductor layer 202. The reason why the second through pattern 114, the fourth through pattern 216 and the eighth through pattern 322 respectively have side surfaces of a stepped structure is that during etching of layers composed of different components, the etching selectivity of the layers composed of different components is different depending on the type of etching process or etchant, etc.

[0073] In addition, the light emitting element may further include a first insulating layer 110 surrounding the outer side wall of the second through pattern 114. The first insulating layer 110 may insulate the second through pattern 114 from the first active layer 104, the first p-type semiconductor layer 106, and the first transparent electrode 108. Although not shown, the first insulating layer 110 may have a structure extending toward the upper portion of the first color filter CF1 and surrounding the side of the first through pattern 112. In this case, since the first color filter CF1 is an insulating material, the first insulating layer 110 may not surround the side of the first through pattern 112. The first insulating layer 110 may include, for example, SiO2, Al2O3, or Si3N4, which has high light transmittance and electrical insulation properties. In addition, the second insulating layer 212 may have a structure surrounding the outer side wall of the third through pattern 214 of the first area AR1 and extending along the upper portion of the second n-type semiconductor layer 202 and surrounding the outer side wall of the fourth through pattern 216 in the second area AR2.

[0074] The light emitting element may include a third through structure TVP3 electrically connected to the second n-type semiconductor layer 202 in the third region AR3 .

[0075] The third through structure TVP3 may include: through patterns 218, 324, which are electrically connected to the second n-type semiconductor layer 202 of the second light-emitting portion LE2 and penetrate a portion of the second light-emitting portion LE2 and the third light-emitting portion LE3; and a sixth connection pattern 316, which penetrates the third bonding layer AD3 between the second light-emitting portion LE2 and the third light-emitting portion LE3 and is electrically connected to the through patterns.

[0076] According to one embodiment, the third through structure TVP3 may include: a fifth through pattern 218, electrically contacting the second n-type semiconductor layer 202; a sixth connection pattern 316, electrically contacting the fifth through pattern 218 and penetrating the third adhesive layer AD3; a ninth through pattern 324, penetrating the third transparent electrode 308, the third p-type semiconductor layer 306, the third active layer 304, the third n-type semiconductor layer 302 and the passivation film PA and electrically contacting the sixth connection pattern 316 and the second electrode pad EL2. According to one embodiment, in the third region AR3, the ninth through pattern 324 may be arranged between the outer side wall of the third light emitting portion LE3 and the outer side wall of the second light emitting portion LE2.

[0077] The fifth through pattern 218 and the ninth through pattern 324 of the third through structure TVP3 may include at least one selected from the group consisting of Ti, Ni, Au, Cr, Cu, Ti, W, Mo, etc. The sixth connection pattern 316 of the third through structure TVP3 may include a low melting point metal having bonding properties and conductivity, such as tin (Sn), indium (In), etc. In addition, the fifth through pattern 218 and the ninth through pattern 324 may have inclined side surfaces whose widths become narrower toward the lower part.

[0078] In the third through structure TVP3, the fifth through pattern 218 may be aligned with the second n-type semiconductor layer 202 of the third area AR3, and the sixth connection pattern 316 may be aligned with the fifth through pattern 218. The ninth through pattern 324 may be arranged to be aligned with the sixth connection pattern 316 and the second electrode pad EL2.

[0079] In addition, the second insulating layer 212 may have an outer wall surrounding the third through pattern 214 in the first area AR1, an outer wall surrounding the fourth through pattern 216 in the second area AR2, and a structure extending along an upper portion of the second n-type semiconductor layer 202 and surrounding a portion of an upper portion of the outer wall of the fifth through pattern 218 in the third area AR3.

[0080] In the fourth region AR4 , the third electrode pad EL3 may be in direct electrical contact with the third n-type semiconductor layer 302 on the third light emitting portion LE3 without passing through the through pattern and the connection pattern.

[0081] In this way, the common electrode pad CEL, the first electrode pad EL1, the second electrode pad EL2 and the third electrode pad EL3 can be respectively connected to the vertically stacked first light-emitting unit LE1, the second light-emitting unit LE2 and the third light-emitting unit LE3 by means of a plurality of through patterns 112, 114, 214, 216, 218, 310, 320, 322, 324 respectively penetrating the first light-emitting unit LE1, the second light-emitting unit LE2 and the third light-emitting unit LE3 and connecting patterns 116, 118, 210, 312, 314, 316 respectively penetrating the first bonding layer AD1, the second bonding layer AD2 and the third bonding layer AD3 and having conductivity. Compared to the situation where no through pattern is formed in the first light-emitting part LE1, the second light-emitting part LE2 and the third light-emitting part LE3, and the first light-emitting part LE1, the second light-emitting part LE2 and the third light-emitting part LE3 are all etched into a mesa structure and the common electrode pad CEL, the first electrode pad EL1, the second electrode pad EL2 and the third electrode pad EL3 of the light-emitting element are respectively connected to the first light-emitting part LE1, the second light-emitting part LE2 and the third light-emitting part LE3, the light-emitting area of ​​the light-emitting element according to an embodiment of the present invention can be larger. Furthermore, compared to the case where the common electrode pad CEL, the first electrode pad EL1, the second electrode pad EL2 and the third electrode pad EL3 are respectively connected to the first light-emitting part LE1, the second light-emitting part LE2 and the third light-emitting part LE3 by using a through-hole pattern that penetrates the first light-emitting part LE1, the second light-emitting part LE2 and the third light-emitting part LE3 at one time, the difficulty of the process of the light-emitting element according to the embodiment of the present invention, for example, due to the difficulty of the etching process for forming the contact via and the large aspect ratio of the etched contact via, the difficulty of the deposition process for filling the inside thereof becomes lower, so that the process can be performed more easily.

[0082] Figure 2 is a cross-sectional view for explaining a light emitting element according to another embodiment of the present invention.

[0083] Reference Figure 2 The light emitting element may include a first light emitting portion LE1, a second light emitting portion LE2, and a third light emitting portion LE3 which are vertically stacked.

[0084] The first light emitting portion LE1 may include a first n-type semiconductor layer 102, a first active layer 104, a first p-type semiconductor layer 106, and a first transparent electrode 108 stacked vertically. The second light emitting portion LE2 may include a second transparent electrode 208, a second p-type semiconductor layer 206, a second active layer 204, and a second n-type semiconductor layer 202 stacked in sequence. The third light emitting portion LE3 may include a third transparent electrode 308, a third p-type semiconductor layer 306, a third active layer 304, and a third n-type semiconductor layer 302 stacked in sequence.

[0085] The light-emitting element may also include: a common electrode pad CEL, which is electrically connected to the first p-type semiconductor layer 106 of the first light-emitting portion LE1, the second p-type semiconductor layer 206 of the second light-emitting portion LE2, and the third p-type semiconductor layer 306 of the third light-emitting portion LE3 in the first area AR1; a first electrode pad EL1, which is electrically connected to the first n-type semiconductor layer 102 of the first light-emitting portion LE1 in the second area AR2; a second electrode pad EL2, which is electrically connected to the second n-type semiconductor layer 202 of the second light-emitting portion LE2 in the third area AR3; and a third electrode pad EL3, which is electrically connected to the third n-type semiconductor layer 302 of the third light-emitting portion LE3 in the fourth area AR4.

[0086] The light emitting element further includes a first color filter CF1 and a first adhesive layer AD1 disposed between the first light emitting portion LE1 and the second light emitting portion LE2, and may further include a second color filter CF2 and a second adhesive layer AD2 disposed between the second light emitting portion LE2 and the third light emitting portion LE3.

[0087] The light emitting element may further include: a first through structure TVP1 including a first through pattern 112, a first connection pattern 116, a third connection pattern 210, a third through pattern 214, a fourth connection pattern 312, a sixth through pattern 310 and a seventh through pattern 320 in the first region AR1; a second through structure TVP2 including a second through pattern 114, a second connection pattern 118, a fourth through pattern 216, a fifth connection pattern 314 and an eighth through pattern 322 in the second region AR2; and a third through structure TVP3 including a fifth through pattern 218, a sixth connection pattern 316 and a ninth through pattern 324 in the third region AR3. In addition, the light emitting element may further include a first insulating layer 110, a second insulating layer 212 and a third insulating layer 318.

[0088] The first through pattern 112 of the first through structure TVP1 may include: a first portion disposed inside the first color filter CF1; and a second portion having a width greater than the first portion and extending toward the upper portion of the first color filter CF1. The second portion of the first through pattern 112 may increase the alignment margin when the first connection pattern 116 is aligned with the first through pattern 112.

[0089] The third through pattern 214 of the first through structure TVP1 may include: a first portion disposed inside the second p-type semiconductor layer 206, the second active layer 204, the second n-type semiconductor layer 202 and the second insulating layer 212; and a second portion having a width greater than the first portion and extending toward the upper portion of the second insulating layer 212. The second portion of the third through pattern 214 may increase an alignment margin when the fourth connection pattern 312 is aligned with the third through pattern 214.

[0090] Furthermore, a vertical central axis passing through the center of the first through pattern 112 may be spaced apart in the horizontal direction from a vertical central axis passing through the center of the third through pattern 214. Furthermore, a vertical central axis passing through the center of the sixth through pattern 310 or the seventh through pattern 320 may be spaced apart in the horizontal direction from a vertical central axis passing through the center of the third through pattern 214. In addition, although a vertical central axis passing through the center of the sixth through pattern 310 or the seventh through pattern 320 may coincide with a vertical central axis passing through the center of the first through pattern 112, it may be spaced apart in the horizontal direction.

[0091] The second through pattern 114 of the second through structure TVP2 may include: a first portion arranged inside the first active layer 104, the first p-type semiconductor layer 106, the first transparent electrode 108 and the first color filter CF1; and a second portion having a width greater than the first portion and extending toward the upper portion of the first color filter CF1. The second portion of the second through pattern 114 may be used to increase the alignment margin when the second connection pattern 118 is aligned with the second through pattern 114.

[0092] Furthermore, the second connection pattern 118 may contact the second portion of the second through pattern 114 and extend toward the outside of the second portion.

[0093] The fourth through pattern 216 of the second through structure TVP2 may include: a first portion disposed inside the second adhesive layer AD2, the second transparent electrode 208, the second p-type semiconductor layer 206, the second active layer 204, the second n-type semiconductor layer 202, and the second insulating layer 212; and a second portion having a width greater than the first portion and extending toward the upper portion of the second insulating layer 212. The second portion of the fourth through pattern 216 may increase an alignment margin when the fifth connection pattern 314 is aligned with the fourth through pattern 216.

[0094] And, if Figure 2 As shown, the first portion of the fourth through pattern 216 may be horizontally spaced from the first portion of the second through pattern 114. The first portion of the fourth through pattern 216 may be electrically connected to an extension of the second connection pattern 118 outside the first portion of the second through pattern 114.

[0095] Accordingly, the vertical central axis passing through the center of the second through pattern 114 may be spaced apart in the horizontal direction from the vertical central axis passing through the center of the fourth through pattern 216. In addition, the vertical central axis passing through the center of the eighth through pattern 322 may be spaced apart in the horizontal direction from the vertical central axis passing through the center of the fourth through pattern 216. Furthermore, the vertical central axis passing through the center of the eighth through pattern 322 may be consistent with the vertical central axis passing through the center of the second through pattern 114, or may be spaced apart in the horizontal direction.

[0096] Although not shown in detail, the fifth through pattern 218 and the sixth through pattern 310 also have upper and lower portions having wider widths, respectively, so that connection margins with connection patterns stacked on the upper and lower portions may be increased.

[0097] Unspecified components and Figure 1a to Figure 1d The constituent elements of the light emitting elements shown are similar, so the description thereof will be omitted and the same reference numerals will be used for the same constituent elements.

[0098] Figure 3 is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention.

[0099] Reference Figure 3 The light emitting element may include a first light emitting portion LE1, a second light emitting portion LE2, and a third light emitting portion LE3 which are vertically stacked.

[0100] The first light emitting portion LE1 may include a first n-type semiconductor layer 102, a first active layer 104, a first p-type semiconductor layer 106, and a first transparent electrode 108 stacked vertically. The second light emitting portion LE2 may include a second transparent electrode 208, a second p-type semiconductor layer 206, a second active layer 204, and a second n-type semiconductor layer 202 stacked in sequence. The third light emitting portion LE3 may include a third transparent electrode 308, a third p-type semiconductor layer 306, a third active layer 304, and a third n-type semiconductor layer 302 stacked in sequence.

[0101] The light-emitting element may also include: a common electrode pad CEL, which is electrically connected to the first p-type semiconductor layer 106 of the first light-emitting portion LE1, the second p-type semiconductor layer 206 of the second light-emitting portion LE2, and the third p-type semiconductor layer 306 of the third light-emitting portion LE3 in the first area AR1; a first electrode pad EL1, which is electrically connected to the first n-type semiconductor layer 102 of the first light-emitting portion LE1 in the second area AR2; a second electrode pad EL2, which is electrically connected to the second n-type semiconductor layer 202 of the second light-emitting portion LE2 in the third area AR3; and a third electrode pad EL3, which is electrically connected to the third n-type semiconductor layer 302 of the third light-emitting portion LE3 in the fourth area AR4.

[0102] The light emitting element may further include: a first color filter CF1 and a first adhesive layer AD1 arranged between the first light emitting portion LE1 and the second light emitting portion LE2; a second color filter CF2 and a second adhesive layer AD2 arranged between the second light emitting portion LE2 and the third light emitting portion LE3.

[0103] The light emitting element may further include: a first through structure TVP1, which includes a first through pattern 112, a first connection pattern 116, a third connection pattern 210, a third through pattern 214, a fourth connection pattern 312, a sixth through pattern 310 and a seventh through pattern 320 in the first area AR1; a second through structure TVP2, which electrically connects the first n-type semiconductor layer 102 and the first electrode pad EL1 in the second area AR2; and a third through structure TVP3, which electrically connects the second n-type semiconductor layer 202 and the second electrode pad EL2 in the third area AR3.

[0104] The light emitting element may further include a second insulating layer 212 , a third insulating layer 318 and a fourth insulating layer 326 .

[0105] The second insulating layer 212 may have a structure surrounding the outer sidewall of the third through pattern 214 and extending toward the upper portion of the second n-type semiconductor layer 202. The third insulating layer 318 may have a structure surrounding the outer sidewall of the seventh through pattern 320. The fourth insulating layer 326 may have a structure surrounding the outer sidewall of the second through structure TVP2. The fourth insulating layer 326 may insulate the first active layer 104, the first p-type semiconductor layer 106, the first transparent electrode 108, the second transparent electrode 208, the second p-type semiconductor layer 206, the second active layer 204, the second n-type semiconductor layer 202, and the second through structure TVP2.

[0106] The first through structure TVP1 can electrically connect one side and the other side of each of the first transparent electrode 108, the second transparent electrode 208 and the third transparent electrode 308 by using a plurality of through patterns 112, 214, 310, 320 and a plurality of connection patterns 116, 210, 312 without etching the first transparent electrode 108, the second transparent electrode 208 and the third transparent electrode 308, thereby increasing the contact area of ​​the first transparent electrode 108, the second transparent electrode 208 and the third transparent electrode 308 with the through patterns 112, 214, 310, 320 and the connection patterns 116, 210, 312 and reducing the resistance. In addition, the second through structure TVP2 and the third through structure TVP3 can directly connect the first n-type semiconductor layer 102 and the first electrode pad EL1, the second n-type semiconductor layer 202 and the second electrode pad EL2 respectively without through patterns and connection patterns to simplify the process.

[0107] Since the components are not described in detail Figure 1a to Figure 1d The constituent elements of the light emitting elements shown are similar, so the description thereof will be omitted and the same reference numerals will be used for the same constituent elements.

[0108] Figures 4 to 19 FIG. 1 is a cross-sectional view for illustrating a method for manufacturing a light emitting element according to an embodiment of the present invention. Figure 1a and Figure 1c The light-emitting element described in the above, and the method for manufacturing the light-emitting element of the present invention is not limited to the following manufacturing method.

[0109] Reference Figure 4 The first light emitting portion LE1 may be formed by sequentially forming a first n-type semiconductor layer 102, a first active layer 104, a first p-type semiconductor layer 106, and a first transparent electrode 108 on a substrate 100. A first color filter CF1 may be formed on the first light emitting portion LE1.

[0110] The substrate 100 may include a first area AR1, a second area AR2, a third area AR3 and a fourth area AR4. As an example, the substrate 100 may have a quadrilateral structure on a plane, and the first area AR1, the second area AR2, the third area AR3 and the fourth area AR4 correspond to corner portions of the substrate 100, respectively.

[0111] The first n-type semiconductor layer 102, the first active layer 104, and the first p-type semiconductor layer 106 may be sequentially grown on the substrate 100 by a process such as a metal organic chemical vapor deposition method (MOCVD) or a molecular beam epitaxy (MBE) deposition method. Then, a first transparent electrode 108 may be formed on the first p-type semiconductor layer 106 by a chemical vapor deposition method (CVD). A first color filter CF1 may be formed on the first transparent electrode 108 by a chemical vapor deposition method.

[0112] Reference Figure 5 The first hole H1 of the first area AR1 and the second hole H2 of the second area AR2 may be formed by etching the first color filter CF1 and the first light emitting portion LE1. The first hole H1 may expose the first transparent electrode 108, and the second hole H2 may expose the first n-type semiconductor layer 102.

[0113] Then, a spare first insulating layer (not shown) may be formed continuously and conformally on the first color filter CF1 formed with the first hole H1 and the second hole H2 without completely filling the first hole H1 and the second hole H2. The spare first insulating layer may be etched to form a first insulating layer 110 remaining on the inner sidewall of the first hole H1.

[0114] Although not shown, the first insulating layer 110 may also be formed on the inner sidewall of the first hole H1 , but since the first color filter CF1 is an insulator, it may not be important whether the first insulating layer 110 is formed in the first hole H1 .

[0115] Reference Figure 6 , first and second through patterns 112 and 114 filling the insides of the first and second holes H1 and H2 may be formed, respectively.

[0116] In more detail, a first conductive film (not shown) filling the first hole H1 and the second hole H2 may be formed on the first insulating layer 110, the first color filter CF1, and the first light emitting portion LE1 in which the first hole H1 and the second hole H2 are formed. The first conductive film may include at least one selected from the group consisting of Ti, Ni, Au, Cr, Cu, Ti, W, Mo, and the like.

[0117] The first conductive film may be etched to expose the surface of the first color filter CF1, thereby forming a first through pattern 112 filling the first hole H1 and a second through pattern 114 filling the second hole H2. The first through pattern 112 may be formed in the first region AR1, and the second through pattern 114 may be formed in the second region AR2.

[0118] Reference Figure 7 , a first adhesive layer AD1 including first connection patterns 116 arranged to be aligned with the first through patterns 112 and second connection patterns 118 arranged to be aligned with the second through patterns 114 may be formed.

[0119] In more detail, a spare first bonding layer (not shown) may be formed on the first color filter CF1 formed with the first through pattern 112 and the second through pattern 114. The spare first bonding layer may be formed using a spin coating process. For example, the spare first bonding layer may include SOG (Silicon On Glass), epoxy resin, polyimide, SU8, or benzocyclobutene (BCB: benzo cyclo butene), etc. A first bonding layer AD1 having a first opening (not shown) exposing the first through pattern 112 and a second opening (not shown) exposing the second through pattern 114 may be formed by etching the spare first bonding layer. A second conductive film (not shown) may be formed on the first bonding layer AD1. The second conductive film may include a substance having bonding properties and conductivity, such as Sn, In, and other low melting point metals. The second conductive film may be etched to expose the surface of the first bonding layer AD1, thereby forming the first connection pattern 116 and the second connection pattern 118, respectively. The first connection pattern 116 may be formed in the first area AR1, and the second connection pattern 118 may be formed in the second area AR2.

[0120] Reference Figure 8 A second n-type semiconductor layer 202, a second active layer 204 and a second p-type semiconductor layer 206 can be sequentially formed on the second substrate 200 by utilizing metal organic chemical deposition or molecular beam epitaxial deposition, and a second transparent electrode 208 can be formed on the second p-type semiconductor layer 206 by utilizing physical vapor deposition, chemical vapor deposition, sol-gel, hydrothermal synthesis, etc. to form a second light-emitting portion LE2.

[0121] Reference Fig. 9 , a second adhesive layer AD2 including a third connection pattern 210 may be formed on the second transparent electrode 208. To explain in detail, a spare second adhesive layer (not shown) may be formed on the second transparent electrode 208 by a spin coating process. For example, the spare second adhesive layer may include SOG (Silicon On Glass), epoxy resin, polyimide, SU8 or benzocyclobutene (BCB: benzo cyclo butene), etc. A second adhesive layer AD2 including a third opening (not shown) may be formed by etching the second adhesive layer. The third opening may be filled by forming a third conductive film (not shown) on the second adhesive layer AD2. The third conductive film may include a substance having adhesive properties and conductivity, such as a low melting point metal such as Sn, In, etc. The third conductive film may be etched until the upper surface of the second adhesive layer AD2 is exposed, thereby forming a third connection pattern 210 that fills the third opening.

[0122] Then, the substrate 200 may be reversed so that the second adhesive layer AD2 including the third connection patterns 210 faces downward, and then removed by laser lift-off.

[0123] Reference Fig.10 , the first bonding layer AD1 formed on the first light emitting portion LE1 and the second bonding layer AD2 formed on the second light emitting portion LE2 can be bonded to bond the first light emitting portion LE1 and the second light emitting portion LE2. Since the first bonding layer AD1 and the second bonding layer AD2 include SOG, respectively, the first bonding layer AD1 and the second bonding layer AD2 can be bonded by a thermocompression bonding process after being brought into contact with each other. At this time, the first connection pattern 116 of the first area AR1 can be bonded to the third connection pattern 210, and the second connection pattern 118 of the second area AR2 can be bonded to the second bonding layer AD2.

[0124] Then, continue to refer to Fig.10 , respectively, a third hole H3 exposing the second transparent electrode 208 and a fourth hole H4 exposing the second connection pattern 118 may be formed. In more detail, the second n-type semiconductor layer 202, the second active layer 204, and the second p-type semiconductor layer 206 may be etched in the first area AR1 to form the third hole H3 exposing the second transparent electrode 208. The second n-type semiconductor layer 202, the second active layer 204, the second p-type semiconductor layer 206, the second transparent electrode 208, and the second adhesive layer AD2 may be etched in the second area AR2 to form the fourth hole H4 exposing the second connection pattern 118.

[0125] refer to Fig.11 The second insulating layer 212 may be formed in a similar manner to the first insulating layer 110 , and a fifth hole H5 may be formed in the third area AR3 .

[0126] Reference Fig.12 , a third through pattern 214 , a fourth through pattern 216 , and a fifth through pattern 218 respectively filling the third hole H3 , the fourth hole H4 , and the fifth hole H5 formed with the second insulating layer 212 may be formed.

[0127] In more detail, a fourth conductive film (not shown) may be formed on the second insulating layer 212 to fill the third hole H3, the fourth hole H4, and the fifth hole H5. The fourth conductive film may include at least one selected from the group consisting of Ti, Ni, Au, and Cr. The fourth conductive film may be etched to expose the surface of the second insulating layer 212, thereby forming a third through pattern 214 filling the third hole H3, a fourth through pattern 216 filling the fourth hole H4, and a fifth through pattern 218 filling the fifth hole H5. The third through pattern 214 may be formed in the first region AR1, the fourth through pattern 216 may be formed in the second region AR2, and the fifth through pattern 218 may be formed in the third region AR3.

[0128] Reference Fig.13 A third n-type semiconductor layer 302, a third active layer 304, and a third p-type semiconductor layer 306 may be sequentially formed on the third substrate 300 by metal organic chemical deposition or molecular beam epitaxy deposition, and a third transparent electrode 308 may be formed on the third p-type semiconductor layer 306 by chemical vapor deposition, thereby forming a spare third light emitting portion (not shown). Then, a second color filter CF2 may be formed on the spare third light emitting portion.

[0129] Reference Fig.14 After the second color filter CF2 is etched to form the sixth hole H6 exposing the third transparent electrode 308 of the first region AR1, a fifth conductive film (not shown) filling the sixth hole H6 may be formed. The fifth conductive film may include at least one selected from the group consisting of Ti, Ni, Au, and Cr. The fifth conductive film may be etched to expose the surface of the second color filter CF2, thereby forming a sixth through pattern 310 filling the sixth hole H6.

[0130] Reference Fig.15 A spare third bonding layer (not shown) may be formed on the second color filter CF2 where the sixth through pattern 310 is formed using a spin coating process. The spare third bonding layer may include SOG.

[0131] After etching the third bonding layer AD3 to form a fourth opening (not shown) exposing the sixth through pattern 310 of the first area AR1, a fifth opening (not shown) exposing the second color filter CF2 of the second area AR2, and a sixth opening (not shown) exposing the second color filter CF2 of the third area AR3, a sixth conductive film (not shown) may be formed on the second color filter CF2 to fill the fourth opening, the fifth opening, and the sixth opening. The sixth conductive film may include a low melting point metal such as Sn or In.

[0132] The sixth conductive film may be etched to expose the second color filter CF2, thereby forming a fourth connection pattern 312 filling the fourth opening, a fifth connection pattern 314 filling the fifth opening, and a sixth connection pattern 316 filling the sixth opening, respectively. The fourth connection pattern 312 may be formed in the first area AR1, the fifth connection pattern 314 may be formed in the second area AR2, and the sixth connection pattern 316 may be formed in the third area AR3.

[0133] The third substrate 300 may be removed by a laser lift-off process. Then, it may be turned over so that the second adhesive layer AD2 faces downward.

[0134] Reference Fig.16 After etching the third n-type semiconductor layer 302, the third active layer 304, and the third p-type semiconductor layer 306 in the first region AR1 to form a seventh hole H7 exposing the third transparent electrode 308, a spare third insulating layer (not shown) may be continuously and uniformly formed along the surface of the spare third light-emitting portion where the seventh hole H7 is formed without completely filling the seventh hole H7. The spare third insulating layer may be etched to form a third insulating layer 318 remaining on the inner side wall of the seventh hole H7.

[0135] A seventh conductive film (not shown) may be formed on the third n-type semiconductor layer 302 to fill the seventh hole H7 formed with the third insulating layer 318. The seventh conductive film may include at least one selected from the group consisting of Ti, Ni, Au, and Cr. The seventh conductive film may be etched to expose the surface of the third n-type semiconductor layer 302, thereby forming a seventh through pattern 320 filling the seventh hole H7.

[0136] Reference Fig.17 The third light emitting portion LE3 having a mesa structure can be formed by etching the spare third light emitting portion. The third light emitting portion LE3 having a mesa structure exposing the fifth connection pattern 314 and the sixth connection pattern 316 can be formed by removing the corners located in the second area AR2 and the third area AR3.

[0137] Reference Fig.18 , a passivation film PA covering the fifth connection pattern 314 and the sixth connection pattern 316 may be formed on the third adhesive layer AD3 and the third light emitting part LE3. The passivation film PA may be etched to expose the surface of the third light emitting part LE3.

[0138] Reference Fig.19After etching the passivation film PA to form an eighth hole (not shown) exposing the fifth connection pattern 314 and a ninth hole (not shown) exposing the sixth connection pattern 316, an eighth conductive film (not shown) may be formed on the passivation film PA to fill the eighth hole and the ninth hole. The eighth conductive film may include at least one selected from the group consisting of Ti, Ni, Au, and Cr. The eighth conductive film may be etched to expose the surface of the passivation film PA, thereby forming an eighth through pattern 322 filling the eighth hole and a ninth through pattern 324 filling the ninth hole. The eighth through pattern 322 may be formed in the second area AR2, and the ninth through pattern 324 may be formed in the third area AR3.

[0139] Then, the third light emitting unit LE3 may be bonded to the structure bonded with the first light emitting unit LE1 and the second light emitting unit LE2 by using the third bonding layer AD3. The third bonding layer AD3 including SOG may be bonded to the second insulating layer 212 by a thermocompression bonding process, and may be arranged so that the fourth connection pattern 312 is aligned with the third through pattern 214, the fifth connection pattern 314 is aligned with the fourth through pattern 216, and the sixth through pattern 316 is aligned with the fifth through pattern 218.

[0140] Accordingly, a first through structure TVP1 including a first through pattern 112, a first connection pattern 116, a third connection pattern 210, a third through pattern 214, a fourth connection pattern 312, a sixth through pattern 310, and a seventh through pattern 320 can be formed; a second through structure TVP2 including a second through pattern 114, a second connection pattern 118, a fourth through pattern 216, a fifth connection pattern 314, and an eighth through pattern 322 can be formed; and a third through structure TVP3 including a fifth through pattern 218, a sixth connection pattern 316, and a ninth through pattern 324 can be formed. The first through structure TVP1 can be formed in the first region AR1, the second through structure TVP2 can be formed in the second region AR2, and the third through structure TVP3 can be formed in the third region AR3.

[0141] Reference Figure 1b , a common electrode pad CEL electrically contacting the first through structure TVP1 in the first area AR1, a first electrode pad EL1 electrically contacting the second through structure TVP2 in the second area AR2, a second electrode pad EL2 electrically contacting the third through structure TVP3 in the third area AR3, and a third electrode pad EL3 electrically contacting the third n-type semiconductor layer 302 in the fourth area AR4 can be formed respectively.

[0142] Although the embodiments of the present invention are described above with reference to the accompanying drawings, it should be understood by those with ordinary knowledge in the technical field to which the present invention belongs that the present invention can be implemented in other specific forms without changing its technical ideas or essential features. Therefore, it should be understood that the embodiments described above are exemplary and not restrictive in all aspects.

Claims

1. A light emitting element, wherein: include: substrate; A first light emitting portion, arranged on a surface of the substrate, comprising a first n-type semiconductor layer, a first active layer, a first p-type semiconductor layer and a first transparent electrode; A second light emitting portion, arranged on the first light emitting portion, comprising a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode having an area different from that of the first transparent electrode; a third light-emitting portion, arranged on the second light-emitting portion, having a light-emitting area smaller than that of the first light-emitting portion or the second light-emitting portion, comprising a third n-type semiconductor layer, a third active layer, a third p-type semiconductor layer and a third transparent electrode; An adhesive layer having electrical insulation between the first light-emitting portion and the third light-emitting portion; as well as a first through structure electrically connecting the first light emitting portion to the third light emitting portion; Wherein, the bonding layer comprises: a first bonding layer bonding the first light emitting portion and the second light emitting portion between the first light emitting portion and the second light emitting portion, and having a first connection pattern having bonding properties and electrical conductivity; and a second bonding layer bonding the second light emitting portion and the third light emitting portion between the second light emitting portion and the third light emitting portion, and having a second connection pattern having bonding properties and electrical conductivity, wherein the third light emitting portion has a mesa structure exposing a portion of the second connection pattern of the second bonding layer, At least one of the first connection patterns includes a first portion formed in the bonding layer and extending along a surface direction of the bonding layer, The first through structure comprises: a first through pattern, electrically connected to the first light-emitting portion; a second through pattern, electrically connected to the second light-emitting portion; A third through pattern is electrically connected to the third light emitting portion, Wherein, vertical central axes of the first through-pattern to the third through-pattern are spaced apart from each other.

2. The light emitting element according to claim 1, wherein The light emitting element further comprises: A common electrode pad electrically connected to the first transparent electrode to the third transparent electrode; a first electrode pad, electrically connected to the first n-type semiconductor layer; a second electrode pad electrically connected to the second n-type semiconductor layer; and The third electrode pad is electrically connected to the third n-type semiconductor layer.

3. The light emitting element according to claim 2, wherein: The first light-emitting portion and the second light-emitting portion each have a quadrilateral structure on a plane, and have first to fourth regions corresponding to first to fourth corners of the light-emitting element, respectively. The third light emitting portion has a quadrilateral structure in a plane, and has a structure in which portions corresponding to the second corner and the third corner are cut.

4. The light emitting element according to claim 3, wherein The second connection patterns exposed by the third light emitting portion are exposed at positions corresponding to the second corner and the third corner, respectively.

5. The light emitting element according to claim 3, wherein The first electrode pad is arranged between the outer side wall of the third light emitting portion and the outer side wall of the second light emitting portion, The second electrode pad is arranged between an outer side wall of the third light emitting portion and an outer side wall of the second light emitting portion.

6. The light emitting element according to claim 3, wherein A distance of the third light emitting portion between the second corner and the third corner is smaller than a distance of the third light emitting portion including the first corner and the fourth corner.

7. The light emitting element according to claim 2, wherein: Also includes: a second through structure electrically connecting the first n-type semiconductor layer and the first electrode pad; as well as a third through structure electrically connecting the second n-type semiconductor layer and the second electrode pad; The first through structure electrically connects the first to third transparent electrodes to the common electrode pad respectively.

8. The light emitting element according to claim 7, wherein The first through structure comprises: The first through pattern electrically connects the first transparent electrode and the first connection pattern. The second through pattern is located between the second transparent electrode and the third transparent electrode and electrically connects the second transparent electrode and the second connection pattern. The third through pattern electrically connects the third transparent electrode and the common electrode pad.

9. The light emitting element according to claim 8, wherein The first through-structure further includes: a fourth through-pattern electrically connecting the second connection pattern and the third transparent electrode, The second connection pattern electrically connects the second through pattern and the fourth through pattern between the second through pattern and the fourth through pattern. The first connection pattern electrically connects the first through pattern and the second transparent electrode between the first through pattern and the second transparent electrode.

10. The light emitting element according to claim 8, wherein Also includes: a first insulating film surrounding an outer sidewall of the second through pattern and extending onto the second n-type semiconductor layer; as well as The second insulating film surrounds the outer sidewall of the third through pattern.

11. The light emitting element according to claim 8, wherein The first through pattern includes an upper portion having a wider width than a lower portion, and the first connection pattern is connected to the upper portion.

12. The light emitting element according to claim 7, wherein: The second through structure comprises: a first through pattern electrically connecting the first n-type semiconductor layer and the first connection pattern; a second through pattern electrically connecting the first connection pattern and the second connection pattern; and The third through pattern electrically connects the second connection pattern and the first electrode pad.

13. The light emitting element according to claim 12, wherein: The third through pattern of the second through structure is arranged between an outer wall of the second light emitting portion and an outer wall of the third light emitting portion.

14. The light emitting element according to claim 12, wherein: Also includes: A passivation film is arranged to surround the third through pattern of the second through structure on the second connection pattern and has an upper surface on the same plane as an upper surface of the third n-type semiconductor layer.

15. The light emitting element according to claim 12, wherein The first connection pattern has an extension portion extending toward the outside of the first through pattern of the second through structure. The second through pattern of the second through structure is connected to an extended portion of the first connection pattern.

16. The light emitting element according to claim 12, wherein A first vertical central axis passing through a center of the first through-pattern of the second through-structure object is horizontally spaced from a second vertical central axis passing through a center of the second through-pattern of the second through-structure object.

17. The light emitting element according to claim 7, wherein: The third through structure comprises: a first through pattern electrically connecting the second n-type semiconductor layer and the second connection pattern; and The second through pattern electrically connects the second connection pattern and the second electrode pad.

18. The light emitting element according to claim 17, wherein The second through pattern of the third through structure is arranged between the outer wall of the third light emitting portion and the outer wall of the second light emitting portion.

19. The light emitting element according to claim 18, wherein Also includes: A passivation film surrounds the second through pattern of the third through structure on the second connection pattern and has an upper surface coplanar with an upper surface of the third n-type semiconductor layer.

20. The light emitting element according to claim 1, wherein The first connection pattern and the first bonding layer are located at the same height, The second connection pattern and the second adhesive layer are located at the same height.

Images