A method for pre-treating cast single crystal silicon

By combining slurry wire cutting and acidic solution cleaning with phosphosilicate glass layer deposition and annealing, the problems of lattice defects and impurities in cast monocrystalline silicon wafers were solved, and the high-efficiency battery performance of cast monocrystalline silicon wafers was achieved.

CN114497269BActive Publication Date: 2026-06-05XIFENG 2D FUJIAN MATERIAL TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XIFENG 2D FUJIAN MATERIAL TECH CO LTD
Filing Date
2020-10-23
Publication Date
2026-06-05

AI Technical Summary

Technical Problem

Cast monocrystalline silicon wafers contain dislocations, small-angle grain boundaries, high defect density, and many metallic impurities, resulting in low minority carrier lifetime and affecting battery conversion efficiency.

Method used

Single-crystal silicon ingots are cast using slurry wire cutting, followed by acidic solution cleaning, deposition of phosphosilicate glass layers, and annealing to remove surface impurities and reshape lattice defects.

Benefits of technology

It significantly improves the passivation level and carrier transport capability of cast monocrystalline silicon wafers, increases minority carrier lifetime by more than 20 times, and improves battery conversion efficiency.

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Abstract

The application provides a pre-treatment method of cast single crystal silicon, characterized by comprising the following steps: cutting a cast single crystal silicon ingot into a cast single crystal silicon wafer by using a mortar line cutting device; removing oil stains, metal particles and other impurities on the surface of the cast single crystal silicon wafer by using an acid solution; depositing a layer of phosphor-silicon glass on the surface of the silicon wafer and performing annealing treatment; and removing the surface reaction layer and the adsorbed impurities of the treated silicon wafer by using a solvent.
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Citation Information

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