Method for manufacturing semiconductor device, semiconductor device, and dram

Abstract

The present disclosure provides a semiconductor device manufacturing method, a semiconductor device and a DRAM. The method comprises: providing a substrate, the substrate comprising a substrate, a plurality of first electrode structures and a filling structure, the plurality of first electrode structures being spaced apart on the substrate, the filling structure being filled between any two adjacent first electrode structures, and at least part of the first electrode structure being exposed from a sidewall of an end of the substrate to form a plurality of first recesses; forming a first support portion in the part of the first recess, wherein a surface area of a support region is less than a surface area of an opening region, the support region being a region covered by all the first support portions and the filling structure, and the opening region being a region not covered by all the first support portions and the filling structure; and removing the filling structure in the substrate where the first support portion is formed. The present disclosure ensures that the filling structure can be removed as completely as possible, avoiding device failure problems caused by residual filling structure.

Description

Technical Field

[0001] This disclosure relates to the semiconductor field, and more specifically, to a method for manufacturing a semiconductor device, a semiconductor device, and DRAM. Background Technology

[0002] In DRAM products, there is an oxide remain issue in the cells (memory units), which can cause large-scale cell failures.

[0003] The information disclosed above in the background section is only intended to enhance the understanding of the background art of the art described herein. Therefore, the background art may contain certain information that does not constitute prior art known to those skilled in the art in this country. Summary of the Invention

[0004] The main objective of this disclosure is to provide a method for manufacturing a semiconductor device, a semiconductor device, and a DRAM, in order to solve the device failure problem caused by oxide residue in the memory cell in the prior art.

[0005] According to one aspect of the present disclosure, a method for fabricating a semiconductor device is provided, the method comprising: providing a substrate, the substrate including a substrate, a plurality of first electrode structures and a filling structure, the plurality of first electrode structures being spaced apart on the substrate, the filling structure filling between any two adjacent first electrode structures such that at least a portion of the first electrode structures have sidewalls exposed away from the substrate to form a plurality of first grooves; forming first support portions in a portion of the first grooves, wherein the surface area of ​​a support region is smaller than the surface area of ​​an opening region, the support region being the area where all the first support portions cover the filling structure, and the opening region being the area where all the first support portions do not cover the filling structure; and removing the filling structure from the substrate in which the first support portions are formed.

[0006] Optionally, a substrate is provided, comprising: providing a substrate including a plurality of spaced capacitive contacts, the surfaces of the capacitive contacts forming a portion of the surface of the substrate; sequentially stacking a first filling layer, a first support layer, and a second filling layer on the surface of the substrate; forming a first mask structure on the surface of the second filling layer away from the first support layer, and using the first mask structure as a mask, etching to form a plurality of second grooves penetrating the second filling layer, the first support layer, and the first filling layer, the second grooves exposing the capacitive contacts one-to-one; removing the first mask structure and filling the plurality of second grooves with electrode material to form a plurality of first electrode structures; etching back a portion of the second filling layer so that at least a portion of the sidewalls of the first electrode structures away from one end of the substrate are exposed, forming a plurality of first grooves, the remaining second filling layer and the remaining first filling layer forming the filling structure, and the remaining first support layer forming a second support portion.

[0007] Optionally, after forming the first groove, removing the filling structure in the substrate where the first support is formed includes: sequentially removing the remaining second filling layer, the predetermined support, and the remaining first filling layer along the opening region, wherein the predetermined support is the second support that does not coincide with the projection of the first support on the substrate.

[0008] Optionally, etching back a portion of the second filler layer to expose at least a portion of the sidewall of the first electrode structure away from the substrate, forming a plurality of the first grooves, includes: forming a second mask structure on the surface jointly formed by the second filler layer and the first electrode structure, the pattern of the second mask structure exposing at least a portion of the second filler layer; using the second mask structure as a mask, etching the second filler layer to form a plurality of the first grooves, the first grooves exposing the sidewall of the first electrode structure; and removing the second mask structure.

[0009] Optionally, the second mask structure includes a negative photoresist and a first patterned mask stacked sequentially in a direction away from the second filling layer.

[0010] Optionally, the first groove exposes a portion of the sidewall of the first electrode structure away from the substrate. The surface of the filling structure that is away from the substrate and flush with the first electrode structure is a predetermined surface. Forming a first support portion in a portion of the first groove includes: sequentially stacking a second support layer and a third mask structure in each of the first grooves, on the predetermined surface, and on the surface of the first electrode structure away from the substrate. The surface of the second support layer away from the first electrode structure is planar. Using the third mask structure as a mask, the second support layer is etched to expose the surface of the first electrode structure away from the substrate and the predetermined surface. The remaining second support layer forms the first support portion, and the surface of the first support portion away from the substrate is higher than the predetermined surface.

[0011] Optionally, stacking a second support layer in each of the first grooves, on the predetermined surface, and on the surface of the first electrode structure away from the substrate includes: forming the second support layer in each of the first grooves, on the predetermined surface, and on the surface of the first electrode structure away from the substrate using an atomic layer deposition process.

[0012] Optionally, the first groove exposes the sidewalls of all the first electrode structures away from the substrate. A first support portion is formed in a portion of the first groove, including: stacking a second support layer and a third mask structure sequentially in each first groove, on the surface of the first electrode structure away from the substrate, and on the surface of the filling structure away from the substrate, wherein the surface of the second support layer away from the first electrode structure is planar; using the third mask structure as a mask, etching the second support layer so that the surface of the first electrode structure away from the substrate and a portion of the surface of the filling structure away from the substrate are exposed, and the remaining second support layer forms the first support portion, wherein the surface of the first support portion away from the substrate is higher than the surface of the first electrode structure away from the substrate.

[0013] Optionally, using the third mask structure as a mask, etching the second support layer to expose the surface of the first electrode structure away from the substrate and the portion of the surface of the filling structure away from the substrate includes: using the third mask structure as a mask to etch the second support layer to expose the surface of the first electrode structure away from the substrate and to prevent the filling structure from being exposed, with the remaining second support layer forming a pre-support layer; removing a portion of the pre-support layer to expose the portion of the surface of the filling structure away from the substrate, with the remaining pre-support layer forming the first support portion.

[0014] Optionally, the third mask structure includes positive photoresist and a second patterned mask stacked sequentially in a direction away from the second support layer.

[0015] Optionally, after removing the filling structure in the substrate where the first support is formed, the method further includes: forming a dielectric layer on the exposed sidewalls of each of the first electrode structures and on the exposed surface of the first support; forming a second electrode structure on the surface of the dielectric layer away from the first electrode structure and away from the first support, wherein the first electrode structure, the dielectric layer and the second electrode structure constitute a capacitor structure.

[0016] Optionally, after forming a second electrode structure on the surface of the dielectric layer away from the first electrode structure and away from the first support, the method further includes: forming an electrode lead-out structure on the surface of the second electrode structure away from the dielectric layer, wherein the surface of the electrode lead-out structure away from the substrate is planar.

[0017] Optionally, the filling structure is made of silicon oxide, the first electrode structure is made of titanium nitride, and the first support is made of silicon carbonitride.

[0018] According to another aspect of the present disclosure, a semiconductor device is also provided, which is fabricated using any of the methods described.

[0019] According to another aspect of the present disclosure, a DRAM is also provided, the DRAM including the aforementioned semiconductor device.

[0020] In the semiconductor device fabrication method of this disclosure, firstly, a substrate including a substrate, a plurality of first electrode structures, and a filling structure is provided. The plurality of first electrode structures are spaced apart on the substrate, and the filling structure fills between any two adjacent first electrode structures, such that at least a portion of the sidewalls of the first electrode structures away from the substrate are exposed, forming a plurality of first grooves. Then, a first support portion is formed in a portion of the first grooves, such that the surface area of ​​all the first support portions covering the filling structure is smaller than the surface area of ​​the uncovered filling structure. Finally, the filling structure in the substrate where the first support portion is formed is removed. The semiconductor device fabrication method of this disclosure, by forming the first grooves and forming the first support portion in a portion of the first grooves, such that the first support portion is formed on the surface of a small portion of the filling structure, while the surface of most of the filling structure remains exposed, and then using the exposed filling structure to remove all the filling structure, ensures support force through the first support portion. Furthermore, the larger area of ​​the exposed filling structure ensures a larger opening area in the substrate that was filled with the first support portion, thereby ensuring that the filling structure can be removed as completely as possible, avoiding device failure caused by the residual filling structure, and resulting in better performance of the semiconductor device. Attached Figure Description

[0021] The accompanying drawings, which form part of this disclosure, are used to provide a further understanding of this disclosure. The illustrative embodiments of this disclosure and their descriptions are used to explain this disclosure and do not constitute an undue limitation of this disclosure. In the drawings:

[0022] Figure 1 A flowchart illustrating a method for fabricating a semiconductor device according to an embodiment of the present disclosure is shown;

[0023] Figures 2 to 18 The diagrams show the structural schematics obtained after each process step of the method for fabricating a semiconductor device according to embodiments of the present disclosure;

[0024] Figure 19 for Figure 10 or Figure 17 The diagram shows a top view of the semiconductor device.

[0025] The above figures include the following reference numerals:

[0026] 100. Substrate; 101. First electrode structure; 102. Filling structure; 103. First groove; 104. First support portion; 105. Capacitor contact; 106. First filling layer; 107. First support layer; 108. Second filling layer; 109. First mask structure; 110. Second groove; 111. Second support portion; 112. Second filling portion; 113. First filling portion; 114. Pre-defined support portion; 115. Second mask structure; 116. Second support layer; 117. Third mask structure; 118. Preparatory support layer; 119. Dielectric layer; 120. Second electrode structure; 121. Electrode lead-out structure. Detailed Implementation

[0027] It should be noted that, unless otherwise specified, the embodiments and features described in this disclosure can be combined with each other. This disclosure will now be described in detail with reference to the accompanying drawings and embodiments.

[0028] To enable those skilled in the art to better understand the present disclosure, the technical solutions of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present disclosure, and not all embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present disclosure.

[0029] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this disclosure are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this disclosure described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0030] It should be understood that when an element (such as a layer, film, region, or substrate) is described as being "on" another element, the element may be directly on the other element, or there may be an intermediate element present. Furthermore, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element, or "connected" to the other element via a third element.

[0031] As mentioned in the background section, prior art suffers from device failure caused by oxide residue in memory cells. To address this issue, in a typical embodiment of this disclosure, a method for fabricating a semiconductor device, a semiconductor device, and a DRAM are provided.

[0032] According to embodiments of this disclosure, a method for fabricating a semiconductor device is provided.

[0033] Figure 1 This is a flowchart of a method for fabricating a semiconductor device according to an embodiment of this disclosure. Figure 1 As shown, the method includes the following steps:

[0034] Step S101, provide as follows Figure 6 The substrate shown includes a substrate 100, a plurality of first electrode structures 101 and a filling structure 102. The plurality of first electrode structures 101 are spaced apart on the substrate 100. The filling structure 102 fills between any two adjacent first electrode structures 101, such that at least a portion of the sidewall of the first electrode structures 101 away from the substrate 100 is exposed to form a plurality of first grooves 103.

[0035] Step S102, a first support portion 104 is formed in part of the first groove 103, wherein, as Figure 10 or Figure 17As shown, the surface area of ​​the support area is smaller than the surface area of ​​the opening area. The support area is the area of ​​the filling structure 102 covered by all the first support parts 104, and the opening area is the area of ​​the filling structure 102 not covered by the first support parts 104.

[0036] Step S103: Remove the filling structure 102 from the substrate where the first support portion 104 is formed, to obtain... Figure 12 The structure shown.

[0037] In the above-described method for fabricating a semiconductor device, firstly, a substrate including a substrate, a plurality of first electrode structures, and a filling structure is provided. The plurality of first electrode structures are spaced apart on the substrate, and the filling structure fills between any two adjacent first electrode structures, such that at least a portion of the sidewalls of the first electrode structures away from the substrate are exposed to form a plurality of first grooves. Then, a first support portion is formed in a portion of the first grooves, such that the surface area of ​​all the first support portions covering the filling structure is smaller than the surface area of ​​the uncovered filling structure. Finally, the filling structure in the substrate where the first support portions are formed is removed. The method for fabricating the semiconductor device disclosed herein involves forming the first groove and a first support portion within a portion of the first groove. This results in the first support portion being formed on the surface of a small portion of the filling structure, while the surface of most of the filling structure remains exposed. The exposed filling structure is then used to remove all the filling structure. On one hand, the first support portion ensures support force; on the other hand, the larger area of ​​the exposed filling structure ensures a larger opening area for the substrate that was filled with the first support portion. This ensures that the filling structure can be removed as completely as possible, avoiding device failure caused by residual filling structure. Consequently, the semiconductor device exhibits superior performance.

[0038] In the prior art, the exposed area of ​​the aforementioned filling structure is small, resulting in a small amount of acid solution injected to remove the filling structure, which cannot completely remove the filling structure, leading to the residue of the filling structure. The residue of the filling structure causes large-area failure of the semiconductor device. However, the semiconductor device manufacturing method disclosed in this invention ensures that the exposed area of ​​the filling structure is large, so that the filling structure can be completely removed, avoiding device failure caused by the residue of the filling structure.

[0039] According to a specific embodiment of this disclosure, a substrate is provided, comprising: as shown in the example... Figure 2As shown, a substrate 100 is provided, which includes a plurality of spaced capacitor contacts 105. The surfaces of the capacitor contacts 105 form a portion of the surface of the substrate 100, and any two adjacent capacitor contacts 105 have an isolation structure (not shown in the figure). A first filling layer 106, a first support layer 107, and a second filling layer 108 are sequentially stacked on the surface of the substrate 100. A first mask structure 109 is formed on the surface of the second filling layer 108 away from the first support layer 107, and using the first mask structure 109 as a mask, an etching is performed to form a pattern penetrating the second filling layer 108, the first support layer 107, and the first filling layer 106. Figure 3 The plurality of second grooves 110 shown correspond one-to-one with the capacitor contacts 105; the first mask structure 109 is removed and electrode material is filled into the plurality of second grooves 110 to form a plurality of first electrode structures 101, resulting in the following: Figure 4 The structure shown is as follows: the second filling layer 108 is etched back to expose at least a portion of the sidewall of the first electrode structure away from the substrate, forming a plurality of the first grooves 103; the remaining second filling layer and the remaining first filling layer form the filling structure 102; and the remaining first support layer forms a plurality of second support portions 111, resulting in the structure shown. Figure 6 The structure is shown. By forming the first mask structure on the second filling layer and selectively etching portions of the second filling layer, the first support layer, and the first filling layer using the first mask structure as a mask, multiple second grooves are formed. Compared to first sequentially forming a support layer and mask structure of materials such as silicon carbonitride on the second filling layer and then etching downwards using the mask structure as a mask, which is difficult to etch the support layer and causes problems with not being able to etch to the bottom during the etching process, in this embodiment, since the second filling layer, the first support layer, and the first filling layer are etched directly through the first mask structure, it is easier to etch to expose the capacitor contacts. This avoids the problem of some electrode materials not being able to contact the capacitor contacts due to incomplete etching, causing partial failure of the first electrode structure. At the same time, since a support layer is not formed on the second filling layer, a larger thickness of the first filling layer and the second filling layer can be grown during the formation of the first filling layer and the second filling layer, thereby ensuring that the obtained device has a large aspect ratio and thus a large capacitance.

[0040] According to another specific embodiment of this disclosure, the thickness of the first support layer is less than the thickness of the first filler layer and the thickness of the second filler layer. The thinner first support layer can provide support, avoiding problems such as device tilting or even collapse caused by excessive height of the first and second filler layers.

[0041] To further simplify and facilitate the removal of all the aforementioned filling structures, according to another specific embodiment of this disclosure, such as... Figure 6 As shown, after the first groove 103 is formed, the remaining second filling layer forms the second filling portion 112, and the remaining first filling layer 106 forms the first filling portion 113. The first filling portion 113 and the second filling portion 112 constitute the filling structure 102. Figure 6 , Figure 11 as well as Figure 12 As shown, removing the filling structure in the substrate where the first support portion is formed includes: sequentially removing the second filling portion 112, the predetermined support portion 114, and the first filling portion 113 along the opening region. The predetermined support portion 114 is the second support portion 111 whose projection on the substrate 100 does not coincide with the projection of the first support portion 104 on the substrate 100. By removing the second filling portion, the predetermined support portion, and the first filling portion, it is further ensured that all the filling structures can be removed relatively easily, further ensuring that the final semiconductor device has good performance.

[0042] Specifically, the method described above for removing the remaining second filling layer can be achieved using dry etching.

[0043] According to a specific embodiment of this disclosure, such as Figures 4 to 6 As shown, the second filling layer is etched back to expose at least a portion of the sidewall of the first electrode structure away from the substrate, forming a plurality of the first grooves, including: Figure 4 as well as Figure 5 As shown, or as Figure 4 as well as Figure 13 As shown, a second mask structure 115 is formed on the surface jointly formed by the second filling layer and the first electrode structure 101. The pattern of the second mask structure 115 exposes at least a portion of the second filling layer. Using the second mask structure 115 as a mask, the second filling layer is etched to form a plurality of the first grooves 103, which expose the sidewalls of the first electrode structure 101. The second mask structure 115 is then removed to obtain... Figure 6 The structure shown or obtained as follows Figure 14 The structure shown, in which Figure 6 A schematic diagram is shown showing the first groove exposing the sidewall of all the aforementioned first electrode structures away from the substrate. Figure 14A schematic diagram is shown showing the first groove exposing a portion of the sidewall of the first electrode structure away from the substrate. By forming the second mask structure on the surface of the second filling layer away from the first support layer, and using the second mask structure as a mask to etch the second filling layer, the first support layer, and the first filling layer, the position and number of the obtained first grooves can be easily controlled, so that the shape of the obtained device meets the design requirements, and a first groove of good quality can be obtained.

[0044] According to another specific embodiment of this disclosure, the second mask structure includes a negative photoresist and a first patterned mask stacked sequentially in a direction away from the second filling layer. The second mask structure includes the negative photoresist and the first patterned mask. By setting the pattern shape of the second patterned mask, it can be further ensured that the number and position of the obtained first grooves meet the design requirements.

[0045] After development, the masked areas of the photoresist are removed. Since the number of grooves required is relatively small, the pattern complexity of the first patterned mask can be reduced by using the negative photoresist. Of course, the patterning process described above is not limited to the negative photoresist described above, and those skilled in the art can flexibly choose the type of photoresist.

[0046] To further ensure the better performance of the aforementioned semiconductor device, according to another specific embodiment of this disclosure, such as... Figure 14 As shown, the first groove 103 exposes a portion of the sidewall of the first electrode structure 101 away from the substrate 100. The surface of the filling structure 102, away from the substrate 100 and flush with the first electrode structure 101, is a predetermined surface BB'. A first support portion is formed in a portion of the first groove, including: Figure 14 , Figure 15 as well as Figure 16 As shown, a second support layer 116 and a third mask structure 117 are sequentially stacked in each of the first grooves 103, on the predetermined surface BB', and on the surface of the first electrode structure 101 away from the substrate 100. The surface of the second support layer 116 away from the first electrode structure 101 is planar. Figure 17As shown, using the third mask structure 117 as a mask, the second support layer 116 is etched, exposing the surface of the first electrode structure 101 away from the substrate 100 and the predetermined surface BB'. The remaining second support layer 116 forms the first support portion 104, and the surface of the first support portion 104 away from the substrate 100 is higher than the predetermined surface. In this embodiment, the first groove only exposes a portion of the first electrode structure. By forming a first support portion higher than the upper surface of the first electrode structure in the exposed first groove, the problem of removing part of the support portion during the subsequent removal of the filling structure, which could cause the support portion to break, is avoided. This further ensures better support stability and better overall stability of the semiconductor device.

[0047] To further ensure minimal consumption of the first support portion during the removal of the filling structure, and thus further avoid the problem of support portion breakage, according to a specific embodiment of this disclosure, such as... Figure 6 As shown, the first groove 103 exposes the sidewall of all the first electrode structures 101 away from the substrate 100, and forms a first support portion in a portion of the first groove, including: Figure 6 , Figure 7 as well as Figure 8 As shown, a second support layer 116 and a third mask structure 117 are sequentially stacked in each of the first grooves 103, on the surface of the first electrode structure 101 away from the substrate 100, and on the surface of the filling structure 102 away from the substrate 100. The surface of the second support layer 116 away from the first electrode structure 101 is planar. Figure 10 As shown, using the third mask structure 117 as a mask, the second support layer 116 is etched, exposing the surface of the first electrode structure 101 away from the substrate 100 and the portion of the surface of the filling structure 102 away from the substrate 100. The remaining second support layer 116 forms the first support portion 104, with the surface of the first support portion 104 away from the substrate 100 higher than the surface of the first electrode structure 101 away from the substrate 100. The first groove exposes the upper ends of all the first electrode structures. By forming the second support layer in all the first grooves and on a portion of the first electrode structures, and exposing the upper surfaces of the first electrode structures and a portion of the upper surfaces of the filling structure after etching, and with the upper surface of the first support portion protruding, the problem of the first support portion being consumed and cracked during subsequent etching is further avoided, thus ensuring a more stable device structure.

[0048] Of course, the method for forming the first support portion is not limited to the method described above. Those skilled in the art can flexibly choose any suitable method to form the first support portion according to the actual situation. Specifically, using the third mask structure as a mask, the second support layer is etched to expose the surface of the first electrode structure away from the substrate and the portion of the filling structure away from the substrate, including: such as... Figures 9 to 10 As shown, using the third mask structure 117 as a mask, the second support layer 116 is etched, exposing the surface of the first electrode structure 101 away from the substrate 100 and preventing the filling structure 102 from being exposed. The remaining second support layer forms a pre-support layer 118, resulting in the following: Figure 9 The structure shown; as Figure 10 As shown, by removing a portion of the aforementioned pre-support layer 118, the surface of the filling structure 102 away from the substrate 100 is exposed, and the remaining portion of the pre-support layer 118 forms the aforementioned first support portion 104. Multiple first grooves open the upper sidewalls of all the first electrode structures, forming first support portions in all the first grooves. When removing the filling structure subsequently, it is necessary to first remove the first support portions in a portion of the first grooves, and then remove the filling structure covered by the remaining first support portions.

[0049] According to another specific embodiment of this disclosure, the third mask structure includes a positive photoresist and a second patterned mask stacked sequentially along a direction away from the second support layer. The third mask structure includes the positive photoresist and the second patterned mask. By setting the pattern shape of the third patterned mask, a larger exposed area of ​​the filling structure can be ensured, further avoiding the problem of incomplete removal due to a small exposed area of ​​the filling structure, which could lead to device failure, and further ensuring better performance of the obtained semiconductor device.

[0050] Specifically, after development, the unmasked portions of the positive photoresist will be removed. Since the area of ​​the second support layer to be removed is relatively large, the positive photoresist can reduce the pattern complexity of the second patterning mask. Of course, the patterning process described above is not limited to the positive photoresist, and those skilled in the art can flexibly choose the type of photoresist.

[0051] According to another specific embodiment of this disclosure, after removing the filling structure in the substrate where the first support portion is formed, the method further includes: as follows: Figure 17 as well as Figure 18As shown, a dielectric layer 119 is formed on the exposed sidewalls of each of the first electrode structures 101 and on the exposed surface of the first support portion 104. A second electrode structure 120 is formed on the surface of the dielectric layer 119 away from the first electrode structures 101 and the first support portion 104. The first electrode structures 101, the dielectric layer 119, and the second electrode structure 120 constitute a capacitor structure. Due to the good removal effect of the filler structure, the contact area between the dielectric layer and the first electrode structure is large, thereby ensuring a large capacitance of the semiconductor device and further ensuring good performance of the semiconductor device.

[0052] Specifically, compared with the prior art, the sidewall exposed area of ​​the first electrode structure disclosed herein is larger, which allows for the deposition of more dielectric material, ensuring a larger area of ​​the dielectric layer and a larger capacitance of the semiconductor device.

[0053] According to a specific embodiment of this disclosure, after forming a second electrode structure on the surface of the dielectric layer away from the first electrode structure and away from the first support portion, the method further includes: forming an electrode lead-out structure 121 on the surface of the second electrode structure 120 away from the dielectric layer 119, wherein the surface of the electrode lead-out structure 121 away from the substrate 100 is planar, resulting in... Figure 18 The structure shown.

[0054] Specifically, before forming the dielectric layer, the surface of the first support portion away from the substrate can be flush with the surface of the first electrode structure away from the substrate. Of course, the surface of the first support portion away from the substrate can be higher than the surface of the first electrode structure away from the substrate. When it is flush, the advantage is that the process is simpler. When it is protruding, the advantages include: the structure is more stable and the risk of the support structure breaking can be reduced.

[0055] In one specific embodiment, Figure 19 for Figure 10 or Figure 17 The top view of the semiconductor device shown is as follows: Figure 19 As shown, one of the aforementioned first support portions 104 covers the filling structure 102 between the four aforementioned first electrode structures 101. A small portion of the aforementioned filling structure is covered, while most of the aforementioned filling structure is exposed. The opening area of ​​the filling structure in this disclosure is larger, and the subsequent wet removal of the filling structure is more thorough and effective.

[0056] According to another specific embodiment of this disclosure, a second support layer is stacked in each of the first grooves, on the predetermined surface, and on the surface of the first electrode structure away from the substrate. This includes forming the second support layer in each of the first grooves, on the predetermined surface, and on the surface of the first electrode structure away from the substrate using an atomic layer deposition process. By using the atomic layer deposition process to form the second support layer, the quality of the second support layer formed in the first grooves, on the first electrode structure, and on the surface of the filling structure away from the substrate can be improved. This avoids the problem of voids caused by using chemical vapor deposition to form the second support layer in the prior art, further ensuring better performance of the semiconductor device.

[0057] In another specific embodiment, a second support layer is stacked in each of the first grooves, on the surface of the first electrode structure away from the substrate, and on the surface of the filling structure away from the substrate. This includes forming the second filling layer in each of the first grooves, on the surface of the first electrode structure away from the substrate, and on the surface of the filling structure away from the substrate using an atomic layer deposition process. The atomic layer deposition process can ensure good quality of the second support layer and further avoid excessive voids in the second support layer.

[0058] Specifically, the materials used for the aforementioned electrode lead-out structures include Si-Ge, although other materials with the same or similar properties can also be selected.

[0059] According to another specific embodiment of this disclosure, the material of the filling structure includes silicon oxide, the material of the first electrode structure includes titanium nitride, and the material of the first support portion includes silicon carbonitride.

[0060] In one specific embodiment of this disclosure, the material of the filling structure is silicon oxide, the material of the first electrode structure is titanium nitride, the material of the first support portion is silicon carbonitride, the material of the second electrode structure is titanium nitride, the material of the dielectric layer is a dielectric material, and the material of the second support portion is silicon carbonitride.

[0061] Specifically, silicon carbonitride is more difficult to etch than silicon oxide. Therefore, by first removing a portion of the silicon carbonitride, the removal of silicon dioxide can be more thorough.

[0062] It should be noted that the removal mentioned above in this disclosure refers to selective etching along the substrate thickness direction.

[0063] According to embodiments of this disclosure, a semiconductor device is also provided, which is manufactured using any of the methods described above.

[0064] The aforementioned semiconductor device is manufactured using any of the methods described above. Compared to the device failure problem caused by oxide residue in the memory cell in the prior art, the method for manufacturing the semiconductor device disclosed herein forms the first groove and a first support portion in a portion of the first groove, so that the first support portion is formed on the surface of a small portion of the filling structure, while the surface of most of the filling structure remains exposed. Then, all the filling structure is removed through the exposed filling structure. On the one hand, the first support portion ensures the supporting force, and on the other hand, it ensures that the area of ​​the exposed filling structure is large, thereby ensuring that the opening area of ​​the substrate filled with the first support portion is large. This ensures that the filling structure can be removed as completely as possible, avoiding device failure problems caused by the residue of the filling structure, and ensuring that the performance of the semiconductor device is better.

[0065] According to embodiments of this disclosure, a DRAM is also provided, the DRAM including the semiconductor device described above.

[0066] The aforementioned DRAM includes the aforementioned semiconductor device. Compared to the device failure problem caused by oxide residue in the memory cell in the prior art, the semiconductor device manufacturing method disclosed herein forms the aforementioned first groove and forms a first support portion in a portion of the aforementioned first groove, so that the first support portion is formed on the surface of a small portion of the filling structure, while the surface of most of the filling structure remains exposed. Then, all the filling structure is removed through the exposed filling structure. On the one hand, the aforementioned first support portion ensures support force, and on the other hand, it ensures that the area of ​​the exposed filling structure is large, thereby ensuring that the opening area of ​​the substrate filled with the first support portion is large. This ensures that the filling structure can be removed as completely as possible, avoiding device failure problems caused by the residue of the aforementioned filling structure, ensuring better performance of the semiconductor device, and thus ensuring better performance of the aforementioned DRAM.

[0067] In the above embodiments of this disclosure, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0068] As can be seen from the above description, the embodiments of this disclosure achieve at least the following technical effects:

[0069] In the method for fabricating the semiconductor device disclosed above, firstly, a substrate including a substrate, a plurality of first electrode structures, and a filling structure is provided. The plurality of first electrode structures are spaced apart on the substrate, and the filling structure fills between any two adjacent first electrode structures, such that at least a portion of the sidewalls of the first electrode structures away from the substrate are exposed to form a plurality of first grooves. Then, a first support portion is formed in a portion of the first grooves, such that the surface area of ​​the filling structure covered by all the first support portions is smaller than the surface area of ​​the uncovered filling structure. Finally, at least all of the filling structures in the substrate where the first support portions are formed are removed. Compared to the device failure problem caused by oxide residue in the memory cell in the prior art, the semiconductor device fabrication method disclosed herein forms the first groove and a first support portion in a portion of the first groove, so that the first support portion is formed on the surface of a small portion of the filling structure, while the surface of most of the filling structure remains exposed. Then, all the filling structure is removed through the exposed filling structure. On the one hand, the first support portion ensures the support force, and on the other hand, it ensures that the area of ​​the exposed filling structure is large, thereby ensuring that the opening area of ​​the substrate filled with the first support portion is large. This ensures that the filling structure can be removed as completely as possible, avoiding device failure caused by the residue of the filling structure, and ensuring that the semiconductor device has better performance.

[0070] The semiconductor device disclosed herein is manufactured using any of the methods described above. Compared to the device failure problem caused by oxide residue in the memory cell in the prior art, the manufacturing method of the semiconductor device disclosed herein forms the first groove and forms a first support portion in a portion of the first groove, so that the first support portion is formed on the surface of a small portion of the filling structure, while the surface of most of the filling structure remains exposed. Then, all the filling structure is removed through the exposed filling structure. On the one hand, the first support portion ensures the supporting force, and on the other hand, it ensures that the area of ​​the exposed filling structure is large, thereby ensuring that the opening area of ​​the substrate filled with the first support portion is large. This ensures that the filling structure can be removed as completely as possible, avoiding device failure problems caused by the residue of the filling structure, and ensuring that the performance of the semiconductor device is better.

[0071] The DRAM disclosed herein includes the aforementioned semiconductor device. Compared to the device failure problem caused by oxide residue in the memory cell in the prior art, the manufacturing method of the semiconductor device disclosed herein forms the aforementioned first groove and forms a first support portion in a portion of the aforementioned first groove, so that the first support portion is formed on the surface of a small portion of the filling structure, while the surface of most of the filling structure remains exposed. Then, all the filling structure is removed through the exposed filling structure. On the one hand, the aforementioned first support portion ensures support force, and on the other hand, it ensures that the area of ​​the exposed filling structure is large, thereby ensuring that the opening area of ​​the substrate filled with the first support portion is large. This ensures that the filling structure can be removed as completely as possible, avoiding device failure problems caused by the residue of the filling structure, ensuring better performance of the semiconductor device, and thus ensuring better performance of the aforementioned DRAM.

[0072] The above description is merely a preferred embodiment of this disclosure and is not intended to limit this disclosure. Various modifications and variations can be made to this disclosure by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A method for fabricating a semiconductor device, characterized in that, include: A substrate is provided, the substrate including a substrate, a plurality of first electrode structures and a filling structure, the plurality of first electrode structures being spaced apart on the substrate, the filling structure filling between any two adjacent first electrode structures and exposing at least a portion of the sidewalls of the first electrode structures away from the substrate to form a plurality of first grooves; A first support portion is formed in a portion of the first groove, wherein the surface area of ​​the support region is smaller than the surface area of ​​the opening region, the support region is the area where all the first support portions cover the filling structure, and the opening region is the area where all the first support portions do not cover the filling structure; Remove the filling structure from the substrate in which the first support portion is formed; Provide a substrate, including: A substrate is provided, the substrate including a plurality of spaced capacitive contacts, the surfaces of the capacitive contacts forming a portion of the surface of the substrate; A first filler layer, a first support layer, and a second filler layer are sequentially stacked on the surface of the substrate; A first mask structure is formed on the surface of the second filling layer away from the first support layer, and a plurality of second grooves are etched through the second filling layer, the first support layer and the first filling layer using the first mask structure as a mask. The second grooves expose the capacitor contacts one by one. The first mask structure is removed and electrode material is filled into a plurality of second grooves to form a plurality of first electrode structures; The second filling layer is etched back to expose at least a portion of the sidewall of the first electrode structure away from the substrate, forming a plurality of the first grooves. The remaining second filling layer and the remaining first filling layer form the filling structure, and the remaining first support layer forms the second support portion.

2. The method according to claim 1, characterized in that, Removing the filling structure from the substrate where the first support portion is formed includes: The remaining second filler layer, the predetermined support portion, and the remaining first filler layer are removed sequentially along the opening region, wherein the predetermined support portion is the second support portion whose projection on the substrate does not coincide with that of the first support portion.

3. The method according to claim 1, characterized in that, The second fill layer is etched back to expose at least a portion of the sidewall of the first electrode structure away from the substrate, forming a plurality of the first grooves, including: A second mask structure is formed on the surface jointly formed by the second filling layer and the first electrode structure, wherein the pattern of the second mask structure exposes at least a portion of the second filling layer; Using the second mask structure as a mask, the second filling layer is etched to form a plurality of the first grooves, the first grooves exposing the sidewalls of the first electrode structure; Remove the second mask structure.

4. The method according to claim 3, characterized in that, The second mask structure includes a negative photoresist and a first patterned mask stacked sequentially in a direction away from the second filling layer.

5. The method according to any one of claims 1 to 4, characterized in that, The first groove exposes a portion of the sidewall of the first electrode structure away from the substrate. The surface of the filling structure that is away from the substrate and flush with the first electrode structure is a predetermined surface. A first support portion is formed in a portion of the first groove, including: In each of the first grooves, on the predetermined surface, and on the surface of the first electrode structure away from the substrate, a second support layer and a third mask structure are sequentially stacked, wherein the surface of the second support layer away from the first electrode structure is planar; Using the third mask structure as a mask, the second support layer is etched, exposing the surface of the first electrode structure away from the substrate and the predetermined surface. The remaining second support layer forms the first support portion, and the surface of the first support portion away from the substrate is higher than the predetermined surface.

6. The method according to claim 5, characterized in that, A second support layer is stacked in each of the first grooves, on the predetermined surface, and on the surface of the first electrode structure away from the substrate, including: The second support layer is formed in each of the first grooves, on the predetermined surface, and on the surface of the first electrode structure away from the substrate using an atomic layer deposition process.

7. The method according to any one of claims 1 to 4, characterized in that, The first groove exposes the sidewalls of all the first electrode structures away from the substrate, and a first support portion is formed in a portion of the first groove, including: In each of the first grooves, on the surface of the first electrode structure away from the substrate, and on the surface of the filling structure away from the substrate, a second support layer and a third mask structure are stacked sequentially, and the surface of the second support layer away from the first electrode structure is planar; Using the third mask structure as a mask, the second support layer is etched, exposing the surface of the first electrode structure away from the substrate and the portion of the fill structure away from the substrate. The remaining second support layer forms the first support portion, and the surface of the first support portion away from the substrate is higher than the surface of the first electrode structure away from the substrate.

8. The method according to claim 7, characterized in that, Using the third mask structure as a mask, the second support layer is etched to expose the surface of the first electrode structure away from the substrate and the portion of the fill structure away from the substrate, including: Using the third mask structure as a mask, the second support layer is etched so that the surface of the first electrode structure away from the substrate is exposed and the filling structure is not exposed, and the remaining second support layer forms a pre-support layer. A portion of the pre-support layer is removed, exposing the surface of the filling structure away from the substrate, and the remaining pre-support layer forms the first support portion.

9. The method according to claim 7, characterized in that, The third mask structure includes positive photoresist and a second patterned mask stacked sequentially in a direction away from the second support layer.

10. The method according to claim 1, characterized in that, After removing the filling structure from the substrate where the first support portion is formed, the method further includes: A dielectric layer is formed on the exposed sidewalls of each of the first electrode structures and on the exposed surface of the first support portion; A second electrode structure is formed on the surface of the dielectric layer away from the first electrode structure and away from the first support portion, and the first electrode structure, the dielectric layer and the second electrode structure constitute a capacitor structure.

11. The method according to claim 10, characterized in that, After forming a second electrode structure on the surface of the dielectric layer away from the first electrode structure and away from the first support, the method further includes: An electrode lead-out structure is formed on the surface of the second electrode structure away from the dielectric layer, and the surface of the electrode lead-out structure away from the substrate is planar.

12. The method according to any one of claims 1 to 4, characterized in that, The filling structure is made of silicon oxide, the first electrode structure is made of titanium nitride, and the first support is made of silicon carbonitride.

13. A semiconductor device, characterized in that, The semiconductor device is manufactured using the method described in any one of claims 1 to 12.

14. A DRAM, characterized in that, Includes the semiconductor device as described in claim 13.

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