SiCl4 stable evaporation supply device for preparing high silicon steel thin strip based on continuous silicon infiltration method

Abstract

SiCl4 stable evaporation supply device based on continuous silicon infiltration method for preparing high silicon steel thin strip belongs to the technical field of high silicon steel preparation, and comprises a SiCl4 evaporation tank, a constant temperature water bath box, a SiCl4 liquid supplement tank, an inert gas input pipe, a SiCl4 liquid supplement pipe and a pressure balance pipe; the SiCl4 evaporation tank is immersed in the constant temperature water bath box; the SiCl4 liquid supplement tank is located above the SiCl4 evaporation tank, the liquid outlet at the bottom of the SiCl4 liquid supplement tank is communicated with the inside of the SiCl4 evaporation tank 1 through the SiCl4 liquid supplement pipe, the gas pressure balance port at the top of the SiCl4 liquid supplement tank is communicated with the inside of the SiCl4 evaporation tank through the pressure balance pipe, the lower end of the pressure balance pipe is flush with the upper limit of the SiCl4 liquid in the SiCl4 evaporation tank; the pressure balance pipe outside the SiCl4 evaporation tank is coaxially sleeved with a liquid level fluctuation isolation sleeve; the lower end of the pressure balance pipe is dynamically matched with the rising and falling of the SiCl4 liquid surface, the dynamic liquid supplement of the SiCl4 liquid in the SiCl4 evaporation tank is realized, the continuous stability of the SiCl4 liquid surface is realized through the dynamic liquid supplement, and the device has the characteristics of simple structure, easy operation, high safety and low cost.

Description

Technical Field

[0001] This invention belongs to the field of high silicon steel preparation technology, and in particular relates to a SiCl4 stable evaporation gas supply device for preparing high silicon steel strips based on continuous silicon diffusion method. Background Technology

[0002] The performance of silicon steel is closely related to its silicon content. As the silicon content increases, the resistivity and permeability of silicon steel gradually increase, while the iron loss gradually decreases. Taking high-silicon steel plates with a Si concentration of 6.5% as an example, they possess excellent comprehensive magnetic properties, including high permeability, low iron loss, and near-zero hysteresis, and are widely used in transformers and high-frequency electric vehicles.

[0003] However, as the silicon content in silicon steel increases, its toughness and ductility decrease dramatically. Traditional high-silicon steel sheet manufacturing processes have failed to solve the brittleness problem during rolling, making it difficult to use traditional hot-rolling and cold-rolling technologies to produce high-silicon gradient silicon steel with a Si concentration of 6.5%.

[0004] The silicon diffusion method involves rapidly heating a non-oriented silicon steel strip with a thickness of 0.1 mm to 0.5 mm and a Si content of approximately 3% to over 1000°C in a non-oxidizing atmosphere. A mixture of nitrogen and argon gas containing SiCl4 is then sprayed onto the steel strip surface through multiple upper and lower gas nozzles. The volume fraction of SiCl4 in the mixture is 5% to 30%. Under high-temperature conditions, the thin steel strip substrate reacts with the SiCl4 in the mixture, causing Si to accumulate on the surface of the silicon steel strip and diffuse along the thickness direction to the core. The silicon diffusion method can continuously produce high-silicon steel strips with a Si concentration of 6.5%, and can also produce high-silicon steel strips with a silicon concentration gradient distribution, characterized by a high surface Si content and a low core Si content.

[0005] Japanese patent application No. JPSHO62-227034A discloses a method for stably manufacturing high-quality high-silicon steel strip in a continuous production line in a short time using a silicon diffusion process. The method involves passing the strip through a non-oxidizing atmosphere while blowing a non-oxidizing gas of SiCl4 with a molar percentage of 5% to 35% onto the surface of the strip. The continuous silicon diffusion process is carried out at a temperature of 1023°C to 1200°C. Subsequently, a diffusion process is performed in a non-oxidizing atmosphere without SiCl4 to diffuse Si into the interior of the thin steel strip. Afterward, the thin steel strip is cooled in a magnetic field and then wound up.

[0006] The Chinese patent application with the publication number CN107923029A discloses a manufacturing method of high silicon steel strip based on continuous siliconizing method. When the steel strip passes through the horizontal continuous siliconizing treatment furnace, the siliconizing treatment is realized by spraying the treatment gas containing Si compound, the purpose is to improve the reaction efficiency of the treatment gas, at the same time, the by-products generated in the siliconizing reaction can be properly discharged from the siliconizing space, the surface properties of the steel strip are prevented from being deteriorated, and thus the high silicon steel strip with excellent surface properties is efficiently manufactured.

[0007] In summary, in the existing manufacturing method of high silicon steel strip, how to obtain the high silicon steel strip by surface siliconizing and diffusion of low silicon steel strip is mainly studied, so as to improve the Si content in the steel strip and improve the magnetic properties of the high silicon steel strip.

[0008] However, SiCl4 is mixed with nitrogen in a gaseous state, and the SiCl4 concentration in the mixed gas has a great influence on the siliconizing rate when the mixed gas is sprayed onto the surface of the steel strip, and the fluctuation of the concentration directly leads to the change of the silicon content in the high silicon steel strip, and further leads to the fluctuation of the performance of the high silicon steel strip product.

[0009] In addition, in the existing manufacturing method of high silicon steel strip, the liquid level of SiCl4 is reduced due to continuous consumption during evaporation. In addition, the nitrogen gas as the carrier gas is delivered through the system delivery pipeline and into the inside of the SiCl4 liquid, and when the nitrogen gas is mixed with SiCl4, due to the stirring of the gas, the SiCl4 liquid level will fluctuate violently. In the process of preparing the high silicon steel strip, it is currently not possible to realize the quantitative and stable supply of gaseous SiCl4 under the condition of violent SiCl4 liquid level fluctuation, and further, the performance stability of the high silicon steel strip is seriously restricted. Therefore, effectively solving the problem of continuous and stable supply of gaseous SiCl4 is of great significance to the preparation process of high silicon steel strip. SUMMARY

[0010] In view of the problems existing in the prior art, the present application provides a SiCl4 stable evaporation gas supply device for preparing high silicon steel strip based on continuous siliconizing method, which can control constant environmental temperature and liquid level height without complex liquid level detection and control mechanism, has the characteristics of simple structure, easy operation, high safety and low cost, effectively realizes the continuous and stable supply of SiCl4, and further well guarantees the stability of the performance of the high silicon steel strip.

[0011] In order to achieve the above object, the present application adopts the following technical scheme: a SiCl4 stable evaporation gas supply device for preparing high silicon steel thin strips based on a continuous silicon infiltration method, comprising a SiCl4 evaporation tank, a constant temperature water bath box, a SiCl4 liquid supplement tank, an inert gas input pipe, a SiCl4 liquid supplement pipe and a pressure balance pipe; the SiCl4 evaporation tank is immersed in the constant temperature water bath box; the SiCl4 liquid supplement tank is located above the SiCl4 evaporation tank, the liquid outlet at the bottom of the SiCl4 liquid supplement tank is communicated with the inside of the SiCl4 evaporation tank 1 through the SiCl4 liquid supplement pipe, the gas pressure balance port at the top of the SiCl4 liquid supplement tank is communicated with the inside of the SiCl4 evaporation tank through the pressure balance pipe, and the lower end of the pressure balance pipe is flush with the upper limit of the SiCl4 liquid in the SiCl4 evaporation tank; one end of the inert gas input pipe is connected to an inert gas source, and the other end of the inert gas input pipe is communicated with the inside of the SiCl4 evaporation tank.

[0012] In the inside of the SiCl4 evaporation tank, the distance between the lower end of the inert gas input pipe and the surface of the bottom of the SiCl4 evaporation tank is 5-7 times the diameter of the inert gas input pipe.

[0013] The tank body of the SiCl4 evaporation tank adopts a cylindrical cylinder structure, a conical cover is arranged at the top of the tank body, the cover and the tank body are sealingly connected through a flange structure, the center of the top of the cover is a mixed gas outlet, the mixed gas outlet is connected to a steel thin strip continuous silicon infiltration treatment device, and a mixed gas output control valve is installed on the connecting pipeline between the mixed gas outlet and the steel thin strip continuous silicon infiltration treatment system.

[0014] A three-way control valve is installed on the SiCl4 liquid supplement pipe between the SiCl4 evaporation tank and the SiCl4 liquid supplement tank, a SiCl4 liquid input pipe is further connected to the three-way control valve, and the SiCl4 liquid input pipe is connected to a SiCl4 liquid source.

[0015] An inert gas preheater is arranged on the inert gas input pipe outside the cover, and the heating temperature of the inert gas preheater is the same as the water bath temperature of the constant temperature water bath box.

[0016] A gas path control valve is installed on the pressure balance pipe between the SiCl4 evaporation tank and the SiCl4 liquid supplement tank, a SiCl4 residual liquid discharge port is arranged at the center of the bottom of the SiCl4 evaporation tank, a SiCl4 residual liquid discharge pipe is connected to the SiCl4 residual liquid discharge port, the SiCl4 residual liquid discharge pipe sealingly penetrates out of the constant temperature water bath box downward, and a SiCl4 residual liquid discharge control valve is installed on the SiCl4 residual liquid discharge pipe outside the constant temperature water bath box.

[0017] The SiCl4 evaporation tank is placed on the annular inner support edge through the flange structure seat on the top of the tank body.

[0018] The constant temperature control box is connected with the constant temperature water bath box, the water outlet of the constant temperature control box is communicated with the water inlet of the constant temperature water bath box, the water inlet of the constant temperature control box is communicated with the water outlet of the constant temperature water bath box, and the circulating water pump and the waterway control valve are sequentially installed on the pipeline between the water outlet of the constant temperature control box and the water inlet of the constant temperature water bath box.

[0019] The water inlet of the constant temperature water bath box is located at the top of the box body, the water outlet of the constant temperature water bath box is located at the bottom of the box body, the water inlet of the constant temperature water bath box and the water outlet of the constant temperature water bath box have a phase angle of 180°, and the diameter of the water inlet of the constant temperature water bath box is 3-4 times the diameter of the water outlet of the constant temperature water bath box.

[0020] The liquid level fluctuation isolation sleeve is coaxially sleeved outside the pressure balance pipe in the SiCl4 evaporation tank, the diameter of the liquid level fluctuation isolation sleeve is 2-3 times the diameter of the pressure balance pipe, the distance between the lower end pipe opening of the liquid level fluctuation isolation sleeve and the bottom surface of the SiCl4 evaporation tank 1 is 1-3 times the diameter of the liquid level fluctuation isolation sleeve, and the distance between the upper end pipe opening of the liquid level fluctuation isolation sleeve and the lower end pipe opening of the pressure balance pipe is 30-50 cm.

[0021] The beneficial effects of the present application are as follows:

[0022] The SiCl4 stable evaporation gas supply device for preparing high-silicon steel thin strips based on a continuous silicon infiltration method has the characteristics of simple structure, easy operation, high safety and low cost, and effectively realizes the continuous and stable supply of SiCl4, thereby well guaranteeing the stability of the performance of high-silicon steel thin strips. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 The SiCl4 stable evaporation gas supply device for preparing high-silicon steel thin strips based on a continuous silicon infiltration method has the characteristics of simple structure, easy operation, high safety and low cost, and effectively realizes the continuous and stable supply of SiCl4, thereby well guaranteeing the stability of the performance of high-silicon steel thin strips.

[0024] Figure 2 The SiCl4 stable evaporation gas supply device for preparing high-silicon steel thin strips based on a continuous silicon infiltration method has the characteristics of simple structure, easy operation, high safety and low cost, and effectively realizes the continuous and stable supply of SiCl4, thereby well guaranteeing the stability of the performance of high-silicon steel thin strips.

[0025] In the figure, 1-SiCl4 evaporation tank, 2-constant temperature water bath box, 3-SiCl4 liquid supplement tank, 4-inert gas input pipe, 5-SiCl4 liquid supplement pipe, 6-pressure balance pipe, 7-capping, 8-mixed gas output control valve, 9-three-way control valve, 10-SiCl4 liquid input pipe, 11-inert gas preheater, 12-gas path control valve, 13-SiCl4 residual liquid discharge pipe, 14-SiCl4 residual liquid discharge control valve, 15-heat preservation outer jacket, 16-constant temperature control box, 17-circulating water pump, 18-water path control valve, 19-liquid level fluctuation isolation sleeve pipe, 20-circumferential inner support edge, 21-SiCl4 liquid, 22-constant temperature water. DETAILED DESCRIPTION

[0026] The application will be further described in detail below in combination with the drawings and specific examples.

[0027] As shown in Figure 1 , 2 , a SiCl4 stable evaporation gas supply device based on continuous silicon infiltration method for preparing high silicon steel thin strip, comprising SiCl4 evaporation tank 1, constant temperature water bath box 2, SiCl4 liquid supplement tank 3, inert gas input pipe 4, SiCl4 liquid supplement pipe 5 and pressure balance pipe 6; the SiCl4 evaporation tank 1 is immersed in the constant temperature water bath box 2; the SiCl4 liquid supplement tank 3 is located above the SiCl4 evaporation tank 1, the tank bottom liquid outlet of the SiCl4 liquid supplement tank 3 is communicated with the inside of the SiCl4 evaporation tank 1 through the SiCl4 liquid supplement pipe 5, the tank top gas pressure balance port of the SiCl4 liquid supplement tank 3 is communicated with the inside of the SiCl4 evaporation tank 1 through the pressure balance pipe 6, and the lower end pipe opening of the pressure balance pipe 6 is flush with the upper limit height liquid surface of the SiCl4 liquid 21 in the SiCl4 evaporation tank 1; one end of the inert gas input pipe 4 is connected to an inert gas supply source, and the other end of the inert gas input pipe 4 is communicated with the inside of the SiCl4 evaporation tank 1.

[0028] In the embodiment, the SiCl4 evaporation tank 1, the constant temperature water bath box 2, the SiCl4 liquid supplement tank 3, the inert gas input pipe 4, the SiCl4 liquid supplement pipe 5 and the pressure balance pipe 6 are all made of 316L stainless steel, and the inert gas supply source is nitrogen.

[0029] In the inside of the SiCl4 evaporation tank 1, the distance between the lower end pipe opening of the inert gas input pipe 4 and the tank bottom surface of the SiCl4 evaporation tank 1 is 5-7 times of the diameter of the inert gas input pipe 4.

[0030] The tank body of the SiCl4 evaporation tank 1 adopts a cylindrical cylinder structure, a conical cover 7 is arranged at the top of the tank body, the cover 7 is sealingly connected with the tank body through a flange structure, the center of the top of the cover 7 is a mixed gas outlet, the mixed gas outlet is connected to a steel thin strip continuous siliconizing treatment equipment, and a mixed gas output control valve 8 is installed on the connecting pipeline between the mixed gas outlet and the steel thin strip continuous siliconizing treatment system.

[0031] In the embodiment, the SiCl4 liquid supplement pipe 5 extends upward from the cover 7 by a length of 10 cm to 20 cm, and the pressure balance pipe 6 extends upward from the cover 7 by a length of 10 cm to 20 cm.

[0032] A three-way control valve 9 is installed on the SiCl4 liquid supplement pipe 5 between the SiCl4 evaporation tank 1 and the SiCl4 liquid supplement tank 3, and a SiCl4 liquid input pipe 10 is further connected to the three-way control valve 9, and the SiCl4 liquid input pipe 10 is connected to a SiCl4 liquid supply source.

[0033] An inert gas preheater 11 is arranged on the inert gas input pipe 4 outside the cover 7, and the heating temperature of the inert gas preheater 11 is the same as the water bath temperature of the constant temperature water bath box 2.

[0034] A gas path control valve 12 is installed on the pressure balance pipe 6 between the SiCl4 evaporation tank 1 and the SiCl4 liquid supplement tank 3, a SiCl4 residual liquid discharge port is arranged at the center of the bottom of the SiCl4 evaporation tank 1, a SiCl4 residual liquid discharge pipe 13 is connected to the SiCl4 residual liquid discharge port, the SiCl4 residual liquid discharge pipe 13 sealingly penetrates downward out of the constant temperature water bath box 2, and a SiCl4 residual liquid discharge control valve 14 is installed on the SiCl4 residual liquid discharge pipe 13 outside the constant temperature water bath box 2.

[0035] A heat preservation jacket 15 is wrapped outside the tank body of the constant temperature water bath box 2, and a ring-shaped inner support edge 20 is arranged at the top tank opening of the constant temperature water bath box 2, and the SiCl4 evaporation tank 1 is placed on the ring-shaped inner support edge 20 through the flange structure seat at the top of the tank body.

[0036] The constant temperature water bath box 2 is connected with a constant temperature control box 16, the water outlet of the constant temperature control box 16 is in communication with the water inlet of the constant temperature water bath box 2, the water inlet of the constant temperature control box 16 is in communication with the water outlet of the constant temperature water bath box 2, a circulating water pump 17 and a water path control valve 18 are sequentially installed on the pipeline between the water outlet of the constant temperature control box 16 and the water inlet of the constant temperature water bath box 2.

[0037] In the embodiment, the water temperature control range of the constant temperature control box 16 is 20℃ to 90℃, and the water temperature control accuracy is ±1℃.

[0038] The water inlet of the constant-temperature water bath 2 is located at the top of the box body, and the water outlet of the constant-temperature water bath 2 is located at the bottom of the box body; the water inlet of the constant-temperature water bath 2 and the water outlet of the constant-temperature water bath 2 have a phase angle of 180°; and the diameter of the water inlet of the constant-temperature water bath 2 is 3-4 times the diameter of the water outlet of the constant-temperature water bath 2.

[0039] The liquid level fluctuation isolation sleeve 19 is coaxially sleeved outside the pressure balance pipe 6 in the SiCl4 evaporation tank 1; the diameter of the liquid level fluctuation isolation sleeve 19 is 2-3 times the diameter of the pressure balance pipe 6; the distance between the lower end of the liquid level fluctuation isolation sleeve 19 and the bottom surface of the SiCl4 evaporation tank 1 is 1-3 times the diameter of the liquid level fluctuation isolation sleeve 19; and the distance between the upper end of the liquid level fluctuation isolation sleeve 19 and the lower end of the pressure balance pipe 6 is 30-50 cm.

[0040] The following describes the one-time use process of the application in combination with the drawings:

[0041] The water control valve 18 is opened, and then the circulating water pump 17 is started to make the constant-temperature water 22 circulate between the constant-temperature control box 16 and the constant-temperature water bath 2 until the water temperature of the constant-temperature water 22 is stabilized at the set value.

[0042] The gas control valve 12 is opened, and the three-way control valve 9 is started at the same time to make the SiCl4 liquid input pipe 10 and the SiCl4 liquid supplement tank 3 conductive, so that the SiCl4 liquid 21 is injected into the SiCl4 liquid supplement tank 3 from the SiCl4 liquid input pipe 10 until the injection amount of the SiCl4 liquid 21 in the SiCl4 liquid supplement tank 3 reaches the set value.

[0043] The flow direction of the three-way control valve 9 is adjusted to make the SiCl4 liquid supplement tank 3 conductive with the SiCl4 evaporation tank 1 through the SiCl4 liquid supplement pipe 5; the SiCl4 liquid 21 in the SiCl4 liquid supplement tank 3 will flow into the SiCl4 evaporation tank 1 under the action of gravity; as the SiCl4 liquid 21 in the SiCl4 evaporation tank 1 increases, the gas in the SiCl4 evaporation tank 1 will automatically flow into the SiCl4 liquid supplement tank 3 through the pressure balance pipe 6 to fill the vacancy, so as to realize the pressure balance between the SiCl4 liquid supplement tank 3 and the SiCl4 evaporation tank 1.

[0044] When the liquid level of the SiCl4 liquid 21 in the SiCl4 evaporation tank 1 rises to the same level as the lower end of the pressure balance pipe 6, the lower end of the pressure balance pipe 6 is blocked by the SiCl4 liquid 21, and the gas in the SiCl4 evaporation tank 1 cannot flow into the SiCl4 liquid supplement tank 3 through the pressure balance pipe 6 any more; the SiCl4 liquid 21 in the SiCl4 liquid supplement tank 3 cannot continue to flow into the SiCl4 evaporation tank 1, and the liquid level of the SiCl4 liquid 21 reaches the upper limit height.

[0045] When the liquid level of SiCl4 liquid 21 reaches the upper limit, the mixed gas output control valve 8 is opened, and the inert gas preheater 11 is started, nitrogen is continuously filled into the SiCl4 liquid 21 in the SiCl4 evaporation tank 1 through the inert gas input pipe 4, the nitrogen gas floats up in the form of bubbles, and after the nitrogen gas bubbles separate from the liquid level of the SiCl4 liquid 21, they automatically mix with the evaporated SiCl4 gas, and then the mixed gas is input into the steel strip continuous siliconizing treatment equipment through the mixed gas output port at the center of the cone top of the cover 7.

[0046] During the nitrogen filling process, fluctuations in the liquid level of the SiCl4 liquid 21 may occur, but due to the presence of the liquid level fluctuation isolation sleeve 19, fluctuations in the liquid level outside the liquid level fluctuation isolation sleeve 19 cannot be transmitted to the inside of the liquid level fluctuation isolation sleeve 19, so that the liquid level at the lower end of the pressure balance pipe 6 can always be maintained stable.

[0047] As the SiCl4 liquid 21 continues to evaporate, the storage of the SiCl4 liquid 21 in the SiCl4 evaporation tank 1 gradually decreases, causing the liquid level of the SiCl4 liquid 21 to gradually decrease, when the liquid level of the SiCl4 liquid 21 is lower than the lower end of the pressure balance pipe 6, the gas conduction state between the SiCl4 liquid tank 3 and the SiCl4 evaporation tank 1 is restored, at this time, the SiCl4 liquid 21 in the SiCl4 liquid tank 3 resumes gravity flow and continues to flow into the SiCl4 evaporation tank 1, achieving dynamic liquid replenishment of the SiCl4 liquid 21 in the SiCl4 evaporation tank 1, and through dynamic liquid replenishment, the liquid level of the SiCl4 liquid 21 in the SiCl4 liquid tank 3 is continuously stable.

[0048] When the storage of the SiCl4 liquid 21 in the SiCl4 liquid tank 3 decreases to the lower limit, in order to ensure uninterrupted dynamic liquid replenishment of the SiCl4 liquid 21 in the SiCl4 evaporation tank 1, the flow direction of the three-way control valve 9 is adjusted again to make the SiCl4 liquid input pipe 10 conductive to the SiCl4 liquid tank 3, and SiCl4 liquid 21 is injected into the SiCl4 liquid tank 3 through the SiCl4 liquid input pipe 10, until the storage of the SiCl4 liquid 21 in the SiCl4 liquid tank 3 recovers to the set value, and then the flow direction of the three-way control valve 9 is adjusted again to make the SiCl4 liquid tank 3 conductive to the SiCl4 evaporation tank 1 through the SiCl4 liquid replenishment pipe 5.

[0049] When the stable evaporation of SiCl4 is finished, the circulating water pump 17 is turned off, the inert gas preheater 11 is turned off, the nitrogen gas is stopped, and then the SiCl4 remaining liquid discharge valve 14 is opened. The remaining SiCl4 liquid 21 in the SiCl4 evaporation tank 1 is first discharged, and the SiCl4 liquid 21 in the SiCl4 supplement tank 3 is first self-flowed into the SiCl4 evaporation tank 1, and then the SiCl4 evaporation tank 1 is discharged, and finally the SiCl4 liquid 21 discharged from the SiCl4 evaporation tank 1 is collected.

[0050] The above-mentioned embodiments are not intended to limit the patent protection scope of the present application. Any equivalent implementation or modification made without departing from the present application shall be included in the patent protection scope of the present application.

Claims

1. A SiCl4 stable evaporation gas supply device for preparing high-silicon steel strips based on a continuous silicon infiltration method, characterized in that: The system includes a SiCl4 evaporator, a constant temperature water bath, a SiCl4 replenishment tank, an inert gas input pipe, a SiCl4 replenishment pipe, and a pressure balance pipe. The SiCl4 evaporator is immersed in the constant temperature water bath. The SiCl4 replenishment tank is located above the SiCl4 evaporator. The bottom outlet of the SiCl4 replenishment tank is connected to the inside of the SiCl4 evaporator (1) through the SiCl4 replenishment pipe. The top pressure balance port of the SiCl4 replenishment tank is connected to the inside of the SiCl4 evaporator through the pressure balance pipe. The lower end of the pressure balance pipe is level with the upper limit of the SiCl4 liquid level inside the SiCl4 evaporator. One end of the inert gas input pipe is connected to an inert gas supply. The other end of the volatile gas input pipe is connected to the interior of the SiCl4 evaporator. The SiCl4 evaporator has a cylindrical structure with a conical cap on top. The cap and the tank are sealed together by a flange. The center of the cap cone is the mixed gas output port, which is connected to the continuous silicon infiltration equipment for steel strips. A mixed gas output control valve is installed on the connecting pipe between the mixed gas output port and the continuous silicon infiltration system for steel strips. A three-way control valve is installed on the SiCl4 replenishment pipe between the SiCl4 evaporator and the SiCl4 replenishment tank. A SiCl4 liquid input pipe is also connected to the three-way control valve and is connected to the SiCl4 liquid supply source.

2. The SiCl4 stable evaporation gas supply device for preparing high-silicon steel strips based on continuous silicon infiltration method according to claim 1, characterized in that: Inside the SiCl4 evaporator, the distance between the lower end of the inert gas inlet pipe and the bottom surface of the SiCl4 evaporator is 5 to 7 times the diameter of the inert gas inlet pipe.

3. The SiCl4 stable evaporation gas supply device for preparing high-silicon steel strips based on continuous silicon infiltration method according to claim 1, characterized in that: An inert gas preheater is installed on the inert gas inlet pipe outside the cover, and the heating temperature of the inert gas preheater is the same as the water bath temperature of the constant temperature water bath.

4. The SiCl4 stable evaporation gas supply device for preparing high-silicon steel strips based on continuous silicon infiltration method according to claim 1, characterized in that: A gas path control valve is installed on the pressure balance pipe between the SiCl4 evaporator and the SiCl4 replenishment tank. The SiCl4 residual liquid discharge port is located at the center of the bottom of the SiCl4 evaporator. The SiCl4 residual liquid discharge port is connected to a SiCl4 residual liquid discharge pipe, which extends downwards and seals through the constant temperature water bath. A SiCl4 residual liquid discharge control valve is installed on the SiCl4 residual liquid discharge pipe outside the constant temperature water bath.

5. The SiCl4 stable evaporation gas supply device for preparing high-silicon steel strips based on continuous silicon infiltration method according to claim 1, characterized in that: The constant temperature water bath is covered with an insulating jacket. The top opening of the constant temperature water bath is provided with an inward supporting edge. The SiCl4 evaporator is placed on the inward supporting edge through a flange structure seat on the top of the tank.

6. The SiCl4 stable evaporation gas supply device for preparing high-silicon steel strips based on continuous silicon infiltration method according to claim 1, characterized in that: The constant temperature water bath is connected to a constant temperature control box. The outlet of the constant temperature control box is connected to the inlet of the constant temperature water bath, and the inlet of the constant temperature control box is connected to the outlet of the constant temperature water bath. A circulating water pump and a water circuit control valve are installed sequentially on the pipeline between the outlet of the constant temperature control box and the inlet of the constant temperature water bath.

7. A SiCl4 stable evaporation gas supply device for preparing high-silicon steel strips based on continuous silicon infiltration method according to claim 6, characterized in that: The inlet of the constant temperature water bath is located at the top of the body, and the outlet is located at the bottom of the body. The inlet and outlet of the constant temperature water bath have a phase angle of 180°. The diameter of the inlet of the constant temperature water bath is 3 to 4 times the diameter of the outlet.

8. A SiCl4 stable evaporation gas supply device for preparing high-silicon steel strips based on continuous silicon infiltration method according to claim 1, characterized in that: A liquid level fluctuation isolation sleeve is coaxially fitted on the outside of the pressure balance tube inside the SiCl4 evaporator. The diameter of the liquid level fluctuation isolation sleeve is 2 to 3 times the diameter of the pressure balance tube. The distance between the lower end of the liquid level fluctuation isolation sleeve and the bottom surface of the SiCl4 evaporator is 1 to 3 times the diameter of the liquid level fluctuation isolation sleeve. The distance between the upper end of the liquid level fluctuation isolation sleeve and the lower end of the pressure balance tube is 30 cm to 50 cm.

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