Luminescent material composition, ink, luminescent device and display device

Abstract

The invention discloses a luminescent material composition, ink, a luminescent device and a display device. The luminescent material composition provided by the invention comprises the host material with gradient energy level distribution and the exciplex capable of generating gradient energy distribution, during energy transfer, part of higher energy is not transferred to the guest material while higher energy is transferred to the guest material, and under the condition that lower energy with higher energy exists, the luminescent material composition can be used for generating the exciplex with gradient energy level distribution. The part of higher energy which is not transmitted to the guest material can be transmitted to the higher energy which is lower energy, and so on, on one hand, the loss of energy which is not transmitted to the guest material can be effectively reduced, large-area energy accumulation is avoided, and the service life of a light-emitting device prepared from the light-emitting material composition is effectively prolonged; and charge balance can be effectively promoted, so that the service life of a light-emitting device prepared from the light-emitting material composition is prolonged.

Description

Technical Field

[0001] The present application relates to the technical field of luminescent materials, and in particular to a luminescent material composition, ink, a luminescent device and a display apparatus. Background Art

[0002] Organic Light Emitting Diodes (OLED) have the advantages of wide color gamut, high color saturation and contrast, and active luminescence. They are favored and widely used in display fields and lighting fields of different sizes. In future display and lighting technologies, organic electroluminescent devices will become the mainstream with their absolute advantages.

[0003] A typical OLED device is a sandwich structure, specifically a stacked structure consisting of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer sandwiched between positive and negative electrodes. When a certain voltage is applied to the two electrodes of the OLED, positively charged carriers (holes) are injected from the anode and the hole injection layer through the hole transport layer into the light-emitting layer, and negatively charged carriers (electrons) are injected from the cathode and the electron injection layer through the electron transport layer into the light-emitting layer. Electrons and holes meet in the light-emitting layer and recombine to generate excitons. The energy transition of the excitons generates photons, thereby emitting light of a certain wavelength.

[0004] The light-emitting layer of a solution-process OLED is generally prepared by a solution process using a light-emitting material composition. However, when the light-emitting layer prepared by the existing light-emitting material composition is used in an OLED, the life of the OLED is poor and needs to be further improved. Summary of the invention

[0005] In view of this, the present application provides a luminescent material composition, aiming to improve the problem of poor lifespan of a light-emitting device prepared from an existing luminescent material composition.

[0006] The embodiment of the present application is implemented as follows:

[0007] In a first aspect, the present application provides a luminescent material composition, comprising a host material and a guest material, wherein the host material comprises a first electron donor material, a first electron acceptor material and an exciton modulation mixed material,

[0008] The exciton modulation hybrid material comprises m second electron donor materials, the HOMO energy level of the first electron donor material and the HOMO energy levels of the m second electron donor materials are distributed in a gradient, and the LUMO energy level of the first electron donor material and the LUMO energy level of the m second electron donor materials are distributed in a gradient; and / or

[0009] The exciton modulation hybrid material comprises n second electron acceptor materials, the HOMO energy level of the first electron acceptor material and the HOMO energy levels of the n second electron acceptor materials are distributed in a gradient, and the LUMO energy level of the first electron acceptor material and the LUMO energy level of the n second electron acceptor materials are distributed in a gradient;

[0010] Wherein, m≥0, n≥0, and m and n are both integers and cannot be 0 at the same time.

[0011] In a second aspect, the present application also provides an ink comprising a solvent and the above-mentioned luminescent material composition.

[0012] In a third aspect, the present application further provides a light-emitting device, comprising an anode, a light-emitting layer and a cathode stacked in sequence, wherein the material of the light-emitting layer comprises the above-mentioned light-emitting material composition. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0014] Figure 1 It is a schematic diagram of energy levels and exciplexes when an exciton modulation mixed material provided in an embodiment of the present application is a second electron donor material;

[0015] Figure 2 It is a schematic diagram of energy levels and exciplexes when an exciton modulation hybrid material provided in an embodiment of the present application is a second electron acceptor material;

[0016] Figure 3 yes Figure 1 A schematic diagram of energy transfer of an exciplex provided in an embodiment of the present application is shown;

[0017] Figure 4 is a schematic structural diagram of a light-emitting device provided in an embodiment of the present application;

[0018] Figure 5 It is a schematic diagram of the structure of another light-emitting device provided in an embodiment of the present application.

[0019] Reference numerals:

[0020] anode 10 ; light emitting layer 20 ; cathode 30 ; hole transport layer 40 ; hole injection layer 50 ; electron transport layer 60 ; electron injection layer 70 . DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0023] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0024] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0025] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or more", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0026] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0027] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0028] In the present invention, "substituted" means that a hydrogen atom in a substituted group is replaced by a substituent.

[0029] In the present invention, when the same substituent appears multiple times, it can be independently selected from different groups. If the general formula contains multiple R1, then R1 can be independently selected from different groups.

[0030] In the present invention, "substituted or unsubstituted" means that the defined group may be substituted or unsubstituted. When the defined group is substituted, it should be understood that the defined group may be substituted by one or more substituents R, wherein R is selected from but not limited to: deuterium atom, cyano, isocyano, nitro or halogen, C1-30 alkyl, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, heteroaromatic group containing 5-20 ring atoms, -NR'R", silane, carbonyl, alkoxycarbonyl, aryloxycarbonyl, carbamoyl, haloformyl, formyl, isocyanate, thiocyanate, isothiocyanate, hydroxyl, trifluoromethyl, and the above groups may be further substituted by substituents acceptable in the art; it is understandable that R' and R" in -NR'R" are independently selected from but not limited to: H, deuterium atom, cyano, isocyano, nitro or halogen, C1-10 alkyl, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, heteroaromatic group containing 5-20 ring atoms.

[0031] In the present invention, the "number of ring atoms" refers to the number of atoms in the atoms constituting the ring itself of a structural compound (e.g., a monocyclic compound, a condensed ring compound, a cross-linked compound, a carbocyclic compound, a heterocyclic compound) in which atoms are bonded to form a ring. When the ring is substituted with a substituent, the atoms contained in the substituent are not included in the ring atoms. The same is true for the "number of ring atoms" described below unless otherwise specified. For example, the number of ring atoms of a benzene ring is 6, the number of ring atoms of a naphthalene ring is 10, and the number of ring atoms of a thienyl group is 5.

[0032] "Aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing a hydrogen atom, which can be a monocyclic aromatic group, a condensed aromatic group, or a polycyclic aromatic group. For polycyclic rings, at least one is an aromatic ring system. For example, "substituted or unsubstituted aromatic group having 6 to 40 ring atoms" refers to an aromatic group containing 6 to 40 ring atoms, preferably a substituted or unsubstituted aromatic group having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aromatic group having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted aromatic group having 6 to 14 ring atoms, and the aromatic group is optionally further substituted; suitable examples include, but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthracenyl, phenanthrenyl, fluoranthenyl, triphenylene, pyrenyl, perylene, naphthyl, fluorenyl, dinaphthylenyl, acenaphthene and derivatives thereof. It is understandable that multiple aromatic groups may also be interrupted by short non-aromatic units (e.g. <10% non-H atoms, such as C, N or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, diaryl ether systems should also be included in the definition of aromatic groups.

[0033] "Heteroaryl or heteroaromatic group" means that at least one carbon atom is replaced by a non-carbon atom on the basis of an aryl group, and the non-carbon atom can be an N atom, an O atom, an S atom, etc. For example, "substituted or unsubstituted heteroaryl having 5 to 40 ring atoms" means a heteroaryl having 5 to 40 ring atoms, preferably a substituted or unsubstituted heteroaryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted heteroaryl having 6 to 14 ring atoms, and the heteroaryl group is optionally further substituted, and suitable examples include but are not limited to: thienyl, furanyl, pyrrolyl, imidazolyl, triazolyl, imidazolyl, oxadiazolyl, triazolyl, pyridyl, bipyridyl, pyrimidyl, triazinyl, triazolyl, acridinyl, pyridazinyl, pyridinyl, oxazine, quinolyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, pyrazinopyrazinyl, isoquinolyl, indolyl, carbazolyl, benzothiophenyl, benzofuranyl, indolyl, carbazolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienothiphenyl, furopyrrolyl, furofuranyl, thienofuranyl, benzisoxazolyl, benzisothiazolyl, benzimidazolyl, quinolyl, isoquinolyl, o-naphthyl, quinoxalinyl, phenanthridinyl, primary pyridyl, quinazolinyl, quinazolinone, dibenzothiophenyl, dibenzofuranyl, carbazolyl and derivatives thereof.

[0034] In the present invention, "alkyl" may represent a straight chain or branched chain alkyl. The carbon number of the alkyl group may be 1 to 50, 1 to 30, 1 to 20, 1 to 10 or 1 to 6. A phrase containing this term, for example, "C1-9 alkyl" means an alkyl group containing 1 to 9 carbon atoms, and each occurrence may be independently C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl alkyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-heonecosyl, n-docosyl, n-tricosyl, n-tetracosyl, n-pentacosyl, n-hexacosyl, n-heptacosyl, n-octacosyl, n-nonacosyl, n-triacontane, adamantane, and the like.

[0035] In the present application, "alkoxy" refers to a group having a structure of "-O-alkyl", i.e., an alkyl group as defined above is connected to other groups via an oxygen atom. Phrases containing the term, suitable examples include, but are not limited to, methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt) and tert-butoxy (-OC(CH3)3 or -OtBu).

[0036] The exciplex in the light-emitting layer of the organic light-emitting diode (OLED) has a high yield and high concentration. Therefore, there is a phenomenon that the energy cannot be transferred efficiently and completely in a timely manner, which may cause serious TTA (triplet-triplet annihilation upconversion) and TPQ (triplet-polaron annihilation). Severe TTA and TPQ will greatly reduce the performance of the device such as the life span.

[0037] The technical solution of this application is as follows:

[0038] In a first aspect, an embodiment of the present application provides a light-emitting material composition, including a host material and a guest material, wherein the host material includes a first electron donor material (EDM), a first electron acceptor material (EAM) and an exciton modulation mixed material.

[0039] The exciton modulation hybrid material includes m second electron donor materials, the HOMO energy level of the first electron donor material and the HOMO energy level of the m second electron donor materials are distributed in a gradient, and the LUMO energy level of the first electron donor material and the LUMO energy level of the m second electron donor materials are distributed in a gradient; and / or, the exciton modulation hybrid material includes n second electron acceptor materials, the HOMO energy level of the first electron acceptor material and the HOMO energy level of the n second electron acceptor materials are distributed in a gradient, and the LUMO energy level of the first electron acceptor material and the LUMO energy level of the n second electron acceptor materials are distributed in a gradient.

[0040] m≥0, n≥0, and both m and n are integers and cannot be 0 at the same time.

[0041] In some embodiments, m is any integer from 1 to 15, for example, any integer from 1 to 10, any integer from 1 to 5, etc.

[0042] In some embodiments, n is any integer from 1 to 15, for example, any integer from 1 to 10, any integer from 1 to 5, etc.

[0043] The m and n are both integers and are not 0 at the same time.

[0044] The m second electron donor materials include second electron donor materials d1 to d2. m In other words, the m second electron donor materials include second electron donor material d1, second electron donor material d2, ..., second electron donor material d m .

[0045] The n second electron acceptor materials are respectively second electron acceptor material a1 to second electron acceptor material a n In other words, the n second electron acceptor materials are respectively second electron acceptor material a1, second electron acceptor material a2, ..., second electron acceptor material a n .

[0046] In the first embodiment of the present application, the exciton modulation hybrid material includes m second electron donor materials, wherein m is an integer greater than 0:

[0047] The LUMO energy level of the m second electron donor materials is greater than the LUMO energy level of the first electron donor material, and the HOMO energy level of the m second electron donor materials is greater than the HOMO energy level of the first electron donor material.

[0048] When m≥2, the second electron donor material d1 to the second electron donor material d m The LUMO energy level gradually increases. In other words, the LUMO 第二电子给体材料dm >······>LUMO 第二电子给体材料d2 >LUMO 第二电子给体材料dm .

[0049] When m≥2, the second electron donor material d1 to the second electron donor material d m The HOMO energy level gradually increases. In other words, the HOMO 第二电子给体材料dm >······>HOMO 第二电子给体材料d2 >HOMO 第二电子给体材料d1 .

[0050] The absolute value of the LUMO energy level difference between the first electron donor material and the second electron donor material with the closest LUMO energy level, and between the two second electron donor materials with the closest LUMO energy level, is independently in the range of 0.01 to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, etc. In other words, the second electron donor material d m From the second electron donor material d1 to the first electron donor material, the LUMO energy level shows a gradient decreasing trend, and the absolute value of the gradient value is 0.01 to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, etc.

[0051] The absolute value of the HOMO energy level difference between the first electron donor material and the second electron donor material with the closest HOMO energy level, and between the two second electron donor materials with the closest HOMO energy level, is independently in the range of 0.01 to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, etc. In other words, the second electron donor material d mFrom the second electron donor material d1 to the first electron donor material, the HOMO energy level shows a gradient decreasing trend, and the absolute value of the gradient value is 0.01 to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, etc.

[0052] The absolute value of the difference between the HOMO energy level of the first electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of each second electron donor material and the LUMO energy level of the first electron acceptor material. In other words, |HOMO 第一电子给体材料 -LUMO 第一电子受体材料 ∣>∣HOMO 第一电子给体材料 -LUMO 第二电子给体材料 ∣.

[0053] When m≥2, the m second electron donor materials include second electron donor materials d1 to second electron donor materials d m , from d1 to d m , the absolute value of the difference between the HOMO energy level of each second electron donor material and the LUMO energy level of the first electron acceptor material gradually decreases. In other words, |HOMO 第二电子给体材料d1 -LUMO 第一电子受体材料 ∣>∣HOMO 第二电子给体材料d2 -LUMO 第一电子受体材料 ∣>······>∣HOMO 第二电子给体材料dm -LUMO 第一电子受体材料 ∣.

[0054] When m is not 0, the energy of the first exciplex generated by the first electron donor material and the first electron acceptor material is greater than the energy of the second exciplex generated by each second electron donor material and the first electron acceptor material.

[0055] When m≥2, the m second electron donor materials include second electron donor materials d1 to second electron donor materials d m , from d1 to d m The energy of the second exciplex generated by each second electron donor material and the first electron acceptor material gradually decreases.

[0056] As an example, see Figure 1 and Figure 3, the energy of the exciplex that can be generated between the first electron donor material and the first electron acceptor material is E (exciplex), the energy of the exciplex that can be generated between the second electron donor material d1 and the first electron acceptor material is E1 (exciplex1), the energy of the exciplex that can be generated between the second electron donor material d2 and the first electron acceptor material is E2 (exciplex2), ..., the second electron donor material d m The energy of the exciplex that can be generated between the first electron acceptor material is E m (exciplex m), the energy of the exciplex satisfies: E>E1>E2>······>E m In this way, during energy transfer, while the energy of E is transferred to the guest material, part of the energy of E will not be transferred to the guest material. In the presence of E1 having lower energy than E, the part of the energy of E that is not transferred to the guest material will be transferred to E1. In the presence of E2 having lower energy than E1, the part of the energy of E1 that is not transferred to the guest material will be transferred to E2, and so on. In this way, on the one hand, the energy loss that is not transferred to the guest material can be effectively reduced, and large-area energy accumulation can be avoided, thereby effectively improving the life of the light-emitting device prepared by the light-emitting material composition.

[0057] The LUMO energy levels and HOMO energy levels of the first electron donor material, the second electron donor material and the first electron acceptor material are distributed in a gradient, so that after injection, the carriers need to cross different potential barriers to finally reach the guest material. This improvement can effectively promote the electrical balance of the device and increase the operating window, thereby reducing the performance degradation of the device and extending the device life.

[0058] It should be noted that, in the present application, the enlargement of the operating window means: in the electrical balance adjustment of the conventional light-emitting device, it is to increase / decrease the injection of holes or electrons into the light-emitting layer, but the red, green and blue light-emitting devices of different colors have different requirements for electrical balance, and directly adjusting the injection of electrons / holes into the light-emitting layer is adjusted together under a unified structure, which leads to the need for trade-offs and cannot achieve a good balance; and the present application adopts the method of directly adjusting the charge balance in the light-emitting layer, which can make certain improvements in the balance trade-offs.

[0059] In a second embodiment of the present application, the exciton modulation hybrid material includes n second electron acceptor materials, where n is an integer greater than 0:

[0060] The LUMO energy level of the n second electron acceptor materials is lower than the LUMO energy level of the first electron acceptor material, and the HOMO energy level of the n second electron acceptor materials is lower than the HOMO energy level of the first electron acceptor material.

[0061] When n≥2, the n second electron acceptor materials include second electron acceptor materials a1 to second electron acceptor materials a n , the second electron acceptor material a1 to the second electron acceptor material a n The LUMO energy level gradually decreases. In other words, >LUMO 第二电子受体材料a1 >LUMO 第二电子受体材料a2 >······>LUMO 第二电子受体材料an .

[0062] When n≥2, the n second electron acceptor materials include second electron acceptor materials a1 to second electron acceptor materials a n , the second electron acceptor material a1 to the second electron acceptor material a n The HOMO energy level of 第二电子受体材料a1 >HOMO 第二电子受体材料a2 >······>HOMO 第二电子受体材料an .

[0063] The absolute value of the LUMO energy level difference between the first electron acceptor material and the second electron acceptor material with the closest LUMO energy level, and between the two second electron acceptor materials with the closest LUMO energy level, is independently in the range of 0.01 to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, etc. In other words, from the first electron acceptor material to the second electron acceptor material a1 and then to the second electron acceptor material a n , when the LUMO energy level shows a gradient decreasing trend, and the absolute value of the gradient value is 0.01 to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, etc.

[0064] The absolute value of the HOMO energy level difference between the first electron acceptor material and the second electron acceptor material with the closest HOMO energy level, and between the two second electron acceptor materials with the closest HOMO energy level, is independently in the range of 0.01 to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, etc. In other words, from the first electron acceptor material to the second electron acceptor material a1 and then to the second electron acceptor material a n, when the HOMO energy level shows a gradient decreasing trend, and the absolute value of the gradient value is 0.01 to 0.5 eV, for example, 0.01 eV, 0.05 eV, 0.08 eV, 0.1 eV, 0.15 eV, 0.2 eV, 0.25 eV, 0.3 eV, 0.35 eV, 0.4 eV, 0.45 eV, 0.5 eV, etc.

[0065] The absolute value of the difference between the HOMO energy level of the first electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of the first electron donor material and the LUMO energy level of each second electron acceptor material. In other words, |HOMO 第一电子给体材料 -LUMO 第一电子受体材料 ∣>∣HOMO 第二电子受体材料 -LUMO 第一电子受体材料 ∣.

[0066] When n≥2, the n second electron acceptor materials include second electron acceptor materials a1 to second electron acceptor materials a n , from a1 to a n , the absolute value of the difference between the HOMO energy level of the first electron donor material and the LUMO energy level of each second electron acceptor material gradually decreases. In other words, |HOMO 第一电子给体材料 -LUMO 第二电子受体材料a1 ∣>∣HOMO 第一电子给体材料 -LUMO 第二电子受体材料a2 ∣>······>∣HOMO 第一电子给体材料 -LUMO 第二电子受体材料an ∣.

[0067] The energy of the first exciplex generated by the first electron donor material and the first electron acceptor material is greater than the energy of the third exciplex generated by the first electron donor material and each second electron acceptor material.

[0068] When n≥2, the n second electron acceptor materials include second electron acceptor materials a1 to second electron acceptor materials a n , from a1 to a n , the energy of the third exciplex generated by the first electron donor material and each second electron acceptor material gradually decreases.

[0069] In some embodiments, see Figure 2 and Figure 3The energy of the exciplex generated between the first electron donor material and the first electron acceptor material is E (exciplex), the energy of the exciplex generated between the first electron donor material and the second electron acceptor material a1 is E1' (exciplex1'), the energy of the exciplex generated between the first electron donor material and the second electron acceptor material a2 is E2' (exciplex2'), ..., the energy of the exciplex generated between the first electron donor material and the second electron acceptor material a n The energy of the exciplex that can be generated between n '(exciplex3'), the energy of the exciplex satisfies: E>E1'>E2'>······>E n '. Thus, during energy transfer, while the energy of E is transferred to the guest material, part of the energy of E will not be transferred to the guest material. In the presence of E1' having lower energy than E, the energy of these parts of E that are not transferred to the guest material will be transferred to E1'. In the presence of E2' having lower energy than E1', the energy of these parts of E1' that are not transferred to the guest material will be transferred to E2'. And so on. In this way, on the one hand, the energy loss that is not transferred to the guest material can be effectively reduced, and the energy accumulation in a large area can be avoided, thereby effectively improving the life of the light-emitting device prepared by the light-emitting material composition. On the other hand, the charge balance can be effectively promoted, thereby improving the life of the light-emitting device prepared by the light-emitting material composition.

[0070] The LUMO energy levels and HOMO energy levels of the first electron donor material, the first electron acceptor material and the second electron acceptor material are distributed in a gradient, so that after injection, the carriers need to cross different potential barriers to finally reach the guest material. This improvement can effectively promote the electrical balance of the device and increase the operating window, thereby reducing the performance degradation of the device and extending the device life.

[0071] In a third embodiment of the present application, the exciton modulation hybrid material includes m second electron donor materials and n second electron acceptor materials, and m and n are both integers greater than 0:

[0072] The LUMO energy levels and HOMO energy levels of the first electron donor material, the first electron acceptor material, the m second electron donor materials, and the n second electron acceptor materials conform to the energy level relationships in the first and second embodiments, which will not be described in detail.

[0073] The absolute value of the difference between the LUMO energy level of the first electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV. In at least some embodiments, the absolute value of the difference between the LUMO energy level of the first electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV and less than or equal to 1.

[0074] The absolute value of the difference between the HOMO energy level of the first electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV. In at least some embodiments, the absolute value of the difference between the HOMO energy level of the first electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV and less than or equal to 1.

[0075] The triplet energy of the first electron donor material, the first electron acceptor material and the exciton modulation hybrid material are all higher than the triplet energy of the guest material. In other words, the triplet energy of the first electron donor material>the triplet energy of the guest material, the triplet energy of the first electron acceptor material>the triplet energy of the guest material, and the triplet energy of the exciton modulation hybrid material>the triplet energy of the guest material.

[0076] In the luminescent material composition, the mass ratio of the host material to the guest material is (80-92):(2-20), for example, (80-92):2, (80-92):5, (80-92):6, (80-92):8, (80-92):10, (80-92):12, (80-92):15, (80-92):16, (80-92):18, (80-92):20, 80:(2-20), 82:(2-20), 84:(2-20), 85:(2-20), 86:(2-20), 88:(2-20), 90:(2-20), 92:(2-20), etc.

[0077] In the host material, the mass ratio of the total mass of the first electron donor material and the first electron acceptor material to the mass ratio of the exciton modulation mixed material is (20-98):(0.1-30), for example, (20-98):0.1, (20-98):1, (20-98):2, (20-98):5, (20-98):8, (20-98):10, (20-98):12, (20-98):15, (20-98):16, (20-98):17, (20-98):18, (20-98):19, (20-98):20, (20-98):21, (20-98):22, (20-98):23, (20-98):24, (20-98):25, (20-98):26, (20-98):27 8): 18, (20~98): 20, (20~98): 22, (20~98): 25, (20~98): 26, (20~98): 28, (20~98): 30, 20: (0.1~30), 25: (0.1~30), 30: (0.1~30), 35: (0.1~30), 40: (0.1~30), 45: (0.1~30), 50: (0.1~30), 55: (0.1~30), 60:

[0078] (0.1~30), 65: (0.1~30), 70: (0.1~30), 75: (0.1~30), 80: (0.1~30), 85: (0.1~30), 90: (0.1~30), 95: (0.1~30), 98: (0.1~30), etc.

[0079] The mass ratio of the first electron donor material to the first electron acceptor material is (1-9):(9-1), for example 0.5:9.5, 1:9, 1.5:8.5, 2:8, 3:7, 4:6, 5:5, 6:4, 7:3, 8:2, 9:1, 9.5:0.5, etc.

[0080] In some embodiments, the first electron donor material and the second electron donor material are each independently a structure represented by formula (I):

[0081]

[0082] in,

[0083] Ar1 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms;

[0084] K is a hole transport unit;

[0085] n1 is selected from any integer from 1 to 6.

[0086] In some embodiments, K is selected from one or more of the following structures:

[0087]

[0088] Among them, Ar 11 is selected from a substituted or unsubstituted aromatic group having 6 to 40 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 40 carbon atoms;

[0089] Y1 and Y2 are independently selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3),

[0090] C=C(R3R4) or P(R3);

[0091] R1, R2, R3, and R4 are independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

[0092] In at least some embodiments, Ar1 and K1 are each independently selected from one or more of the following structures:

[0093]

[0094] in,

[0095] Y1, Y2 are selected from single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4)

[0096] or P(R3);

[0097] R1, R3, and R4 are independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

[0098] It should be noted that any connectable site in the above groups can be used as a connecting site.

[0099] As an example, in some embodiments, the first electron donor material includes at least one of the compounds shown in the following structural formula:

[0100]

[0101]

[0102] In some embodiments, the second electron donor material comprises at least one of the compounds shown in the following structural formula:

[0103]

[0104]

[0105]

[0106] In some embodiments, the first electron acceptor material and the second electron acceptor material are each independently a structure represented by formula (II):

[0107]

[0108] Wherein, Ar2 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms;

[0109] A is an electron transfer unit;

[0110] m1 is selected from integers of 1 to 6.

[0111] In some embodiments, the electron transport unit A in the general formula (II) is selected from F, cyano or one or more of the following groups:

[0112]

[0113] in,

[0114] a is 1, 2, or 3;

[0115] X 1 To X 8 Each is independently selected from CR7 or N, and at least one is N;

[0116] M 1 、M 2 、M 3 Each independently represents N(R7), C(R7R8), Si(R7R8), O, C=N(R7), C=C(R7R8), P(R7), P(=O)R7, S, S=O, SO2 or none;

[0117] R7 and R8 are independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

[0118] It should be noted that “none” means that there is no such group and the benzene rings are not connected.

[0119] In at least some embodiments, the electron transport unit A is selected from

[0120] It should be noted that any connectable site in the above groups can be used as a connecting site.

[0121] As an example, in some embodiments, the first electron acceptor material includes at least one of the compounds shown in the following structural formula:

[0122]

[0123] In some embodiments, the second electron acceptor material comprises at least one of the compounds shown in the following structural formula:

[0124]

[0125]

[0126]

[0127] The guest material is selected from phosphorescent guest materials, fluorescent guest materials, and thermally activated delayed fluorescent guest materials.

[0128] The phosphorescent guest material may be selected from, but not limited to, one or more of a phosphorescent guest material containing iridium and a phosphorescent guest material containing platinum.

[0129] As an example, in some embodiments, the iridium-containing phosphorescent guest material can be selected from but not limited to one or more of Ir(ppy)3, Ir(mppy)3, Ir(ppy)2acac and Firpic.

[0130] In a second aspect, an embodiment of the present application further provides an ink, comprising a solvent and the luminescent material composition described above.

[0131] In the ink, the mass concentration of the luminescent material composition is 1-10%, for example, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, etc. Within the concentration range, the ink can have a good film-forming effect.

[0132] The solvent may include, but is not limited to, one or more of aromatic hydrocarbon compounds, aromatic ester compounds, alkane compounds, aromatic hydrocarbon compounds, ether compounds, ketone compounds, and amine compounds.

[0133] Among them, the aromatic hydrocarbon compounds may include but are not limited to one or more of toluene, xylene (including its isomers), trimethylbenzene (including its isomers), chlorobenzene, dichlorobenzene, tetralin, decalin, and methylnaphthalene (including its isomers).

[0134] Aromatic ester compounds may include, but are not limited to, ethyl acetate, butyl acetate, pentyl acetate, alkyl benzoates (the alkyl group may be methyl, ethyl, propyl, butyl, pentyl, hexyl, dodecyl, heptadecyl, including isomers thereof, and specific examples may include methyl benzoate, ethyl benzoate, propyl benzoate, butyl benzoate, pentyl benzoate, etc.), alkylated alkyl benzoates (the alkylated group may be p-methyl, p-ethyl, p-propyl, p-tert-butyl, 3-ethoxy; the alkyl group may be methyl, ethyl, propyl, butyl, pentyl, hexyl, dodecyl, heptadecyl, including isomers thereof; specific examples may include methyl p-methylbenzoate, ethyl p-methylbenzoate, butyl p-methylbenzoate, ethyl p-ethylbenzoate, 3-ethoxybenzoic acid methyl ester, ethyl p-tert-butylbenzoate, etc.) One or more thereof.

[0135] The alkane compound may include, but is not limited to, one or more of n-octane, n-pentane, n-hexane, cyclohexane, phenylcyclohexane, dodecane, and decane.

[0136] The ether compound may include, but is not limited to, one or more of anisole, phenethyl ether, o-phenyl dimethyl ether, phenyl ether, n-butyl phenyl ether, methyl anisole and its isomers, dimethyl anisole and its isomers, 4-methyl anisole, tetrahydrofuran, and benzofuran.

[0137] The ketone compound may include, but is not limited to, one or more of methyl ethyl ketone, cyclohexanone, acetone, and methyl isobutyl ketone.

[0138] The amine compound may include, but is not limited to, one or more of aniline, dimethylacetamide, ethylenediamine, octadeceneamine, ethanolamine, and N,N-dimethylformamide.

[0139] The embodiment of the present application further provides a luminescent film, which includes the luminescent material composition described above, or the luminescent film is prepared by a film-forming process using the above-mentioned ink.

[0140] In at least one embodiment, the film forming process is a solution method, and the solution method can be a spin coating method, a printing method, an inkjet printing method, a scraper coating method, a printing method, a dip-pull method, a soaking method, a spraying method, a roll coating method, a casting method, a slit coating method, and a strip coating method, etc.

[0141] Third, see Figure 4The embodiment of the present application further provides a light-emitting device 100, comprising an anode 10, a light-emitting layer 20 and a cathode 30, wherein the material of the light-emitting layer 20 comprises the above-mentioned light-emitting material composition.

[0142] See also Figure 5 In one embodiment, the light emitting device 100 further includes a hole transport layer 40 between the anode 10 and the light emitting layer 20. In other words, the light emitting device 100 includes the anode 10, the hole transport layer 40, the light emitting layer 20 and the cathode 30 stacked in sequence.

[0143] In one embodiment, the light emitting device 100 further includes a hole injection layer 50 located between the anode 10 and the hole transport layer 40 .

[0144] In one embodiment, the light emitting device 100 further includes an electron transport layer 60 located between the light emitting layer 20 and the cathode 30 .

[0145] In one embodiment, the light emitting device 100 further includes an electron injection layer 70 located between the electron transport layer 60 and the cathode 30 .

[0146] The anode 10 and the cathode 30 are electrodes for light-emitting devices known in the art, for example, they can be independently and independently include but are not limited to doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, metal single substance electrodes or alloy electrodes. The material of the doped metal oxide electrode can be but is not limited to one or more of indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), zinc doped indium oxide (IZO), magnesium doped zinc oxide (MZO), aluminum doped magnesium oxide (AMO), and cadmium doped zinc oxide. The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / APC / ITO, IZO / Ag / IZO, IZO / APC / IZO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., wherein “ / ” represents a stacked structure, for example, AZO / Ag / AZO represents a composite electrode comprising sequentially stacked AZO layers, Ag layers and AZO layers. The material of the metal single substance electrode may include but is not limited to one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba. The alloy electrode includes but is not limited to Au:Mg alloy electrode and Ag:Mg alloy electrode.

[0147] In some embodiments, the anode is an electrode with a relatively high work function, for example, it may include but is not limited to a doped metal oxide electrode with a relatively high work function, a metal single substance electrode with a relatively high work function, and a carbon nanotube electrode. The metal single substance electrode with a relatively high work function may be selected from but is not limited to Ni, Pt, Au, Ag, Ir, etc.

[0148] In some embodiments, the cathode is an electrode with a relatively low work function, for example, it may include but is not limited to a metal single substance electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The metal single substance electrode with a relatively low work function may be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function may be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrode with a relatively low work function may be Au:Mg and Ag:Mg, etc.

[0149] The material of the hole transport layer 40 may be a material known in the art for a hole transport layer, or may be a hole transport material sold by a commercial company, for example, may be selected from but not limited to HTM014 (manufactured by Merck), HTM081 (manufactured by Merck), HTM163 (manufactured by Merck), HTM222 (manufactured by Merck), NHT 5 (manufactured by Novaled), NHT 18 (manufactured by Novaled), NHT 49 (manufactured by Novaled), NHT 51 (manufactured by Novaled), EL-301 (manufactured by Hodogaya), EL-22T (manufactured by Hodogaya), 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine amine (TPD), poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine) (Poly-TPD), N, N'-bis (3-methylphenyl) -N, N'-bis (phenyl) -spiro (spiro-TPD), N, N'-bis (4- (N, N'-diphenyl-amino) phenyl) -N, N'-diphenyl benzidine (DNTPD), 4,4',4'-tri (N-carbazolyl) -triphenylamine (TCTA), 4,4',4'-tri (N-3-methylphenyl-N-phenylamino) triphenylamine (m-MTDATA), poly [( 9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyl octyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',One or more of N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO. ,

[0150] The material of the hole injection layer 50 can be a material known in the art for the hole injection layer, and can also be a hole injection material sold by a commercial company, for example, it can be selected from but not limited to one or more of NDP 2 (manufactured by Novaled), NDP 9 (manufactured by Novaled), F4-TCNQ, F6-TCNNQ as p-type doping material; tetrafluorotetracyanoquinodimethane, 7,7,8,8-tetracyanobenzoquinodimethane, 4,4',4"-tri(2-naphthylphenylamino)triphenylamine (m-MTDATA), perylenetetracarboxylic dianhydride, pentacene, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzo One or more of phenanthrene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivative (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, hexafluorophthalocyanine copper, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

[0151] The material of the electron transport layer 60 is a material known in the art for electron transport layers, and can also be an electron transport material sold by a commercial company, for example, it can be selected from but not limited to one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport material includes but is not limited to doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The metal oxide in the undoped metal oxide particles includes but is not limited to one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the doped metal oxide includes but is not limited to one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the doped metal oxide includes but is not limited to one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn. As an example, the doped metal oxide can be aluminum zinc oxide (AZO), lithium-doped zinc oxide (LZO), magnesium-doped zinc oxide (MZO), tin-doped zinc oxide (Sn-ZnO), etc. The ceramic semiconductor material includes but is not limited to barium titanate. The IIB-VIA semiconductor material includes but is not limited to one or more of ZnS, ZnSe, and CdS. The IIIA-VA semiconductor material includes but is not limited to one or more of InP and GaP. The IB-IIIA-VIA semiconductor material includes but is not limited to one or more of CuInS and CuGaS. The organic electron transport material includes but is not limited to NET 164 (manufactured by Novaled), NDN 87 (manufactured by Novaled), NDN 45 (manufactured by Novaled), NDN 18 (manufactured by Novaled), NDN218 (manufactured by Novaled), ET093 (manufactured by Idemitsu Kosan), ETM020 (manufactured by Merck), ETM033 (manufactured by Merck), ETM034 (manufactured by Merck), ETM036 (manufactured by Merck), 4,6-bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine, 2,9-dimethyl-4,7-biphenyl-1,10-o-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri(1-phenyl-1H-benzimidazol-2-yl)benzene, 8-hydroxyquinoline aluminum, 8-hydroxyquinoline lithium, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum Alq3, and one or more of ionic conjugated polyelectrolytes.

[0152] The material of the electron injection layer 70 may be a material known in the art for an electron injection layer, for example, may be selected from but not limited to one or more of Yb (ytterbium), yttrium fluoride, Li, LiF, NaF, CsCO3, Cs, KBH4 and KH.

[0153] It is understandable that the light emitting device 100 may also be further provided with some functional layers conventionally used in light emitting devices to help improve the performance of the light emitting device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0154] It can be understood that the materials of each layer of the light emitting device 100 can be adjusted according to the light emitting requirements of the light emitting device 100 .

[0155] In some embodiments, the light emitting device 100 further includes a substrate, and the substrate is disposed on a side of the anode 10 away from the light emitting layer 20 , or the substrate is disposed on a side of the cathode 30 away from the light emitting layer 20 .

[0156] The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include but is not limited to one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide and polyether sulfone.

[0157] It can be understood that the light emitting device 100 can be a positive light emitting device or an inverted light emitting device. The light emitting device 100 can be an organic light emitting device.

[0158] The light-emitting layer 20 of the light-emitting device 100 includes the light-emitting material composition described in the present application, and thus has a longer lifespan.

[0159] In a fourth aspect, the present application further relates to a display device, which includes the light-emitting device 100 .

[0160] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0161] The present application is described in detail below by means of specific examples, which are only partial examples of the present application and are not intended to limit the present application. The raw materials used in the following examples are all commercially available products unless otherwise specified.

[0162] Example 1

[0163] Providing an ITO / Ag / ITO anode 10, wherein the thickness of each layer is 7 / 110 / 10 nm respectively;

[0164] Depositing NHT-51:NDP-9 mixed material on the anode 10, annealing at 230°C for 30 minutes, to obtain a hole injection layer 50 with a thickness of 60 nm;

[0165] Depositing NHT-51 material on the hole injection layer 50 and annealing at 230° C. for 30 min to obtain a hole transport layer 40 with a thickness of 100 nm;

[0166] Ink is deposited on the hole transport layer 40 to obtain a light-emitting layer 20 with a thickness of 55 nm, wherein the ink includes a first electron donor material EDM1, a first electron acceptor material EAM1, an exciton modulation mixed material EMOM1 (a second electron acceptor material), a guest material Ir(mppy)3 and a solvent toluene, wherein the mass concentration of the ink is 4%, the mass ratio of the host material to the guest material is 9:1, and the mass ratio of EDM1, EAM1 and EMOM1 is 5:2.5:2.5;

[0167] Transfer the substrate to a vacuum degree of 9*10 -7 In a vacuum chamber of 1000 torr, ETM036:LiQ is deposited on the light-emitting layer 20 to obtain an electron transport layer 60 with a thickness of 24 nm;

[0168] Yb is evaporated on the electron transport layer to obtain an electron injection layer 70 with a thickness of 1 nm;

[0169] Ag is evaporated on the electron injection layer 70 to obtain a cathode 30 with a thickness of 18 nm;

[0170] CPL008 (manufactured by Huarui Optoelectronics) is evaporated on the cathode 30 to form a light extraction layer with a thickness of 80 nm, thereby obtaining the light-emitting device 100 .

[0171] Example 2

[0172] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EMOM7 to replace EMOM1 in Embodiment 1.

[0173] Example 3

[0174] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EMOM9 to replace EMOM1 in Embodiment 1.

[0175] Example 4

[0176] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EMOM17 to replace EMOM1 in Embodiment 1.

[0177] Example 5

[0178] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EMOM28 to replace EMOM1 in Embodiment 1.

[0179] Example 6

[0180] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EMOM34 to replace EMOM1 in Embodiment 1.

[0181] Example 7

[0182] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EMOM37 to replace EMOM1 in Embodiment 1.

[0183] Example 8

[0184] This embodiment is basically the same as Embodiment 1, except that the exciton modulation mixed material of this embodiment includes EMOM1 and EMOM37, and the mass ratio of EMOM1 to EMOM37 is 3:7.

[0185] Example 9

[0186] This embodiment is basically the same as Embodiment 1, except that the exciton modulation mixed material of this embodiment includes EMOM1, EMOM28 and EMOM37, and the mass ratio of EMOM1, EMOM28 and EMOM37 is 3:3:4.

[0187] Example 10

[0188] This embodiment is basically the same as Embodiment 1, except that the exciton-modulated mixed material of this embodiment includes EMOM1, EMOM7, EMOM9, EMOM17, EMOM34 and EMOM37, and the mass ratio of EMOM1, EMOM7, EMOM9, EMOM17, EMOM34 and EMOM37 is 1:2:1:2:2:2.

[0189] Embodiment 11

[0190] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EMOM42 to replace EMOM1 in Embodiment 1, and in this embodiment, the mass ratio of EAM1, EDM1, and EMOM42 is 5:2.5:2.5.

[0191] Example 12

[0192] This embodiment is basically the same as Embodiment 11, except that this embodiment uses EMOM43 to replace EMOM1 in Embodiment 1.

[0193] Embodiment 13

[0194] This embodiment is basically the same as Embodiment 11, except that this embodiment uses EMOM44 to replace EMOM1 in Embodiment 1.

[0195] Embodiment 14

[0196] This embodiment is basically the same as Embodiment 11, except that this embodiment uses EMOM50 to replace EMOM1 in Embodiment 1.

[0197] Embodiment 15

[0198] This embodiment is basically the same as Embodiment 11, except that this embodiment uses EMOM56 to replace EMOM1 in Embodiment 1.

[0199] Example 16

[0200] This embodiment is basically the same as Embodiment 11, except that this embodiment uses EMOM78 to replace EMOM1 in Embodiment 1.

[0201] Embodiment 17

[0202] This embodiment is basically the same as Embodiment 11, except that this embodiment uses EMOM85 to replace EMOM1 in Embodiment 1.

[0203] Embodiment 18

[0204] This embodiment is basically the same as Embodiment 11, except that the exciton modulation mixed material of this embodiment includes EMOM42 and EMOM43, and the mass ratio of EMOM42 to EMOM43 is 3:7.

[0205] Embodiment 19

[0206] This embodiment is basically the same as Embodiment 11, except that the exciton modulation mixed material of this embodiment includes EMOM42, EMOM44 and EMOM85, and the mass ratio of EMOM42, EMOM44 and EMOM85 is 3:3:4.

[0207] Embodiment 20

[0208] This embodiment is basically the same as Embodiment 11, except that the exciton-modulated mixed material of this embodiment includes EMOM42, EMOM43, EMOM44, EMOM50, EMOM56 and EMOM85, and the mass ratio of EMOM42, EMOM44 and EMOM85 is 3:3:1:1:1:1.

[0209] Embodiment 21

[0210] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the mass ratio of EAM1:EMOM1 is 9:1.

[0211] Embodiment 22

[0212] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, the mass ratio of EAM1:EMOM1 is 1:9.

[0213] Embodiment 23

[0214] This embodiment is basically the same as Embodiment 1, except that the total mass content of the main material in this embodiment is 98%.

[0215] Embodiment 24

[0216] This embodiment is basically the same as Embodiment 1, except that the total mass content of the main material in this embodiment is 80%.

[0217] Embodiment 25

[0218] This embodiment is basically the same as Embodiment 1, except that in this embodiment, EDM1:EAM1=9:1.

[0219] Embodiment 26

[0220] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, EDM1:EAM1=1:9.

[0221] Embodiment 27

[0222] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EDM2 to replace EDM1 in Embodiment 1.

[0223] Embodiment 28

[0224] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EDM10 to replace EDM1 in Embodiment 1.

[0225] Embodiment 29

[0226] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EDM16 to replace EDM1 in Embodiment 1.

[0227] Embodiment 30

[0228] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EDM22 to replace EDM1 in Embodiment 1.

[0229] Embodiment 31

[0230] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EDM28 to replace EDM1 in Embodiment 1.

[0231] Embodiment 32

[0232] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EAM2 to replace EAM1 in Embodiment 1.

[0233] Embodiment 33

[0234] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EAM3 to replace EAM1 in Embodiment 1.

[0235] Embodiment 34

[0236] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EAM6 to replace EAM1 in Embodiment 1.

[0237] Embodiment 35

[0238] This embodiment is basically the same as Embodiment 1, except that this embodiment uses EAM16 to replace EAM1 in Embodiment 1.

[0239] Embodiment 36

[0240] This embodiment is basically the same as Embodiment 1, except that the exciton modulation mixed material of this embodiment includes EMOM37 and EMOM85, wherein the ratio of the sum of the mass of EDM1 and EMOM37 to the sum of the mass of EAM1 and EMOM85 is 5:5.

[0241] Embodiment 37

[0242] This embodiment is basically the same as Embodiment 1, except that the exciton-modulated mixed material of this embodiment includes EMOM1, EMOM7, EMOM9, EMOM17, EMOM34, EMOM37, EMOM42, EMOM43, EMOM44, and EMOM45, wherein the ratio of the sum of the masses of EMOM1, EMOM37, EMOM38, EMOM39, and EMOM40 to the sum of the masses of EMOM1, EMOM1, EMOM7, EMOM9, EMOM17, EMOM34, and EMOM37 is 5:5, the ratio of the mass of EMOM42, EMOM43, EMOM44, and EMOM45 is 1:1:1:1, and the ratio of the mass of EMOM1, EMOM7, EMOM9, EMOM17, EMOM34, and EMOM37 is 1:1:1:1:1:1.

[0243] Comparative Example 1

[0244] This embodiment is substantially the same as Embodiment 1, except that the exciton modulation mixed material is not included in this comparative example.

[0245] Comparative Example 2

[0246] This embodiment is basically the same as Embodiment 1, except that the main material in this comparative example includes EDM1 and EMOM1.

[0247] Comparative Example 3

[0248] This embodiment is basically the same as Embodiment 1, except that the main material in this comparative example includes EDM1 and EMOM7.

[0249] Comparative Example 4

[0250] This embodiment is basically the same as Embodiment 1, except that the main material in this comparative example includes EDM1 and EMOM9.

[0251] Comparative Example 5

[0252] This embodiment is basically the same as Embodiment 1, except that the main material in this comparative example includes EDM1 and EMOM37.

[0253] Comparative Example 6

[0254] This example is basically the same as Example 1, except that the main material in this comparative example includes EAM1 and EMOM42.

[0255] Comparative Example 7

[0256] This example is basically the same as Example 1, except that the main material in this comparative example includes EAM1 and EMOM85.

[0257] The LUMO energy levels and HOMO energy levels of the first electron donor material, the first electron acceptor material, the second electron donor material, and the second electron acceptor material are shown in Table 1 below:

[0258] Table 1:

[0259]

[0260] The color coordinates, current efficiency CE@1000nit, current density 10mA / cm 2 The voltage (voltage @ J10) and life T95 @ 1000nit were tested. The test results are shown in Table 2.

[0261] Among them, the current efficiency CE@1000nit uses FPD optical property measurement equipment from Foster, and controls the efficiency test system built by QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabView to measure parameters such as voltage, current, brightness, and luminous spectrum, and obtain the current efficiency through calculation.

[0262] The test method for life span T95 is: when the device is driven by a constant current density, the time required for the device brightness to decrease to a certain proportion of the maximum brightness, and the time when the brightness drops to 95% of the maximum brightness is defined as T95, and this life span is the measured life span. In order to shorten the test cycle, the device life span test is usually carried out at high brightness by accelerating device aging, and the life span at high brightness is obtained by fitting the extended exponential decay brightness attenuation fitting formula, for example: the life span at 1000nit is calculated as T95@1000nit. The specific calculation formula is as follows:

[0263]

[0264] Among them, T95 L The conversion life under 1000nit, T95 H is the measured lifetime at a constant current density, L H is the actual brightness of the device at a constant current density, L L is 1000nit, A is the acceleration factor, and this experiment measures the lifespan of several groups of green OLED devices, where the constant current density is 25mA / cm 2 , the A value is 1.7.

[0265] Table 2:

[0266]

[0267]

[0268] From Table 2 we can see that:

[0269] Compared with the light-emitting devices of comparative examples 1 to 7, the light-emitting devices of embodiments 1 to 237 have similar color coordinates, similar CE@1000nit, similar voltage@J10 and significantly longer lifespan. It can be seen that the light-emitting device using the light-emitting material composition of the present application as the light-emitting layer material can have a longer lifespan on the basis of ensuring that the light-emitting device has good current efficiency and voltage@J10. The reason may be that the light-emitting material composition of the present application includes a host material with an energy level gradient distribution, which can produce an exciplex with an energy gradient distribution. During energy transfer, while higher energy is transferred to the guest material, part of the higher energy will not be transferred to the guest material. In the presence of relatively high energy and low energy, these parts of the higher energy that are not transferred to the guest material will be transferred to relatively high energy and low energy, and so on. In this way, on the one hand, the energy loss that is not transferred to the guest material can be effectively reduced, large-area energy accumulation can be avoided, and charge balance can be effectively promoted;

[0270] Compared with the light-emitting devices of Examples 1 to 7, the light-emitting devices of Examples 8 to 10 and 37 have a longer lifespan. It can be seen that when the light-emitting material composition includes two or more second electron acceptor materials, the lifespan of the light-emitting device can be more effectively improved. The reason may be that when the light-emitting material composition includes two or more second electron acceptor materials, the energy loss that is not transferred to the guest material can be more effectively reduced, the energy accumulation in a large area can be more effectively avoided, and the charge balance can be more effectively promoted.

[0271] Compared with the light-emitting devices of Examples 11 to 17, the light-emitting devices of Examples 18 to 20 and 37 have a longer lifespan. It can be seen that when the light-emitting material composition includes more than two second electron donor materials, the lifespan of the light-emitting device can be more effectively improved. The reason may be that when the light-emitting material composition includes more than two second electron acceptor materials, the energy loss that is not transferred to the guest material can be more effectively reduced, large-area energy accumulation can be more effectively avoided, and charge balance can be more effectively promoted.

[0272] The technical solutions provided by the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A luminescent material composition, comprising a host material and a guest material, characterized in that: The host material includes a first electron donor material, a first electron acceptor material and an exciton modulation mixed material, The exciton modulation hybrid material comprises m second electron donor materials, the HOMO energy level of the first electron donor material and the HOMO energy levels of the m second electron donor materials are distributed in a gradient, and the LUMO energy level of the first electron donor material and the LUMO energy level of the m second electron donor materials are distributed in a gradient; and / or The exciton modulation hybrid material comprises n second electron acceptor materials, the HOMO energy level of the first electron acceptor material and the HOMO energy levels of the n second electron acceptor materials are distributed in a gradient, and the LUMO energy level of the first electron acceptor material and the LUMO energy level of the n second electron acceptor materials are distributed in a gradient; Wherein, m≥0, n≥0, and m and n are both integers and cannot be 0 at the same time.

2. The luminescent material composition according to claim 1, characterized in that: When m is not 0, the LUMO energy level of the m second electron donor materials is greater than the LUMO energy level of the first electron donor material, and the HOMO energy level of the m second electron donor materials is greater than the HOMO energy level of the first electron donor material; and / or When n is not 0, the LUMO energy level of the n second electron acceptor materials is lower than the LUMO energy level of the first electron acceptor material, and the HOMO energy level of the n second electron acceptor materials is lower than the HOMO energy level of the first electron acceptor material.

3. The luminescent material composition according to claim 2, characterized in that: When m≥2, the m second electron donor materials include second electron donor materials d1 to second electron donor materials d m , the second electron donor material d1 to the second electron donor material d m The LUMO energy level of the second electron donor material d1 gradually increases to the second electron donor material d m The HOMO energy level gradually increases; and / or When n≥2, the n second electron acceptor materials include second electron acceptor materials a1 to second electron acceptor materials a n , the second electron acceptor material a1 to the second electron acceptor material a n The LUMO energy level of the second electron acceptor material a1 gradually decreases to the second electron acceptor material a n The HOMO energy level decreases gradually.

4. The luminescent material composition according to claim 1, characterized in that: When m is not 0, the absolute value of the difference between the HOMO energy level of the first electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of each second electron donor material and the LUMO energy level of the first electron acceptor material; and / or When n is not 0, the absolute value of the difference between the HOMO energy level of the first electron donor material and the LUMO energy level of the first electron acceptor material is greater than the absolute value of the difference between the HOMO energy level of the first electron donor material and the LUMO energy level of each second electron acceptor material.

5. The luminescent material composition according to claim 4, characterized in that: When m≥2, the m second electron donor materials include second electron donor materials d1 to second electron donor materials d m , from d1 to d m , the absolute value of the difference between the HOMO energy level of each second electron donor material and the LUMO energy level of the first electron acceptor material gradually decreases; When n≥2, the n second electron acceptor materials include second electron acceptor materials a1 to second electron acceptor materials a n , from a1 to a n , the absolute values ​​of the differences between the HOMO energy level of the first electron donor material and the LUMO energy levels of each second electron acceptor material gradually decrease.

6. The luminescent material composition according to claim 1, characterized in that: When m is not 0, the energy of the first exciplex generated by the first electron donor material and the first electron acceptor material is greater than the energy of the second exciplex generated by each second electron donor material and the first electron acceptor material; and / or When n is not 0, the energy of the first exciplex generated by the first electron donor material and the first electron acceptor material is greater than the energy of the third exciplex generated by the first electron donor material and each second electron acceptor material.

7. The luminescent material composition according to claim 6, characterized in that: When m≥2, the m second electron donor materials include second electron donor materials d1 to second electron donor materials d m , from d1 to d m , the energy of the second exciplex generated by each of the second electron donor materials and the first electron acceptor material gradually decreases; When n≥2, the n second electron acceptor materials include second electron acceptor materials a1 to second electron acceptor materials a n , from a1 to a n , the energy of the third exciplex generated by the first electron donor material and each of the second electron acceptor materials gradually decreases.

8. The luminescent material composition according to claim 1, characterized in that: When m≥2, The absolute values ​​of the LUMO energy level differences between the first electron donor material and the second electron donor material having the closest LUMO energy levels and between the two second electron donor materials having the closest LUMO energy levels are independently in the range of 0.01 eV to 0.5 eV; The absolute values ​​of the HOMO energy level differences between the first electron donor material and the second electron donor material having the closest HOMO energy levels and between the two second electron donor materials having the closest HOMO energy levels are independently in the range of 0.01 eV to 0.5 eV.

9. The luminescent material composition according to claim 1, characterized in that: When n≥2, The absolute values ​​of the LUMO energy level differences between the first electron acceptor material and the second electron acceptor material having the closest LUMO energy levels and between the two second electron acceptor materials having the closest LUMO energy levels are independently in the range of 0.01 eV to 0.5 eV; The absolute values ​​of the HOMO energy level differences between the first electron acceptor material and the second electron acceptor material having the closest HOMO energy levels and between the two second electron acceptor materials having the closest HOMO energy levels are independently in the range of 0.01 eV to 0.5 eV.

10. The luminescent material composition according to claim 1, characterized in that: The absolute value of the difference between the LUMO energy level of the first electron donor material and the LUMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV; and / or The absolute value of the difference between the HOMO energy level of the first electron donor material and the HOMO energy level of the first electron acceptor material is greater than or equal to 0.25 eV; and / or The triplet energy of the first electron donor material, the first electron acceptor material and the exciton modulation hybrid material are all higher than the triplet energy of the guest material.

11. The luminescent material composition according to claim 1, characterized in that: The mass ratio of the host material to the guest material is (80-92):(2-20); In the host material, the mass ratio of the total mass of the first electron donor material and the first electron acceptor material to the exciton modulation mixed material is (20-98): (0.1-30); The mass ratio of the first electron donor material to the first electron acceptor material is (1-9):(9-1).

12. The luminescent material composition according to claim 1, characterized in that: The first electron donor material and the second electron donor material are each independently a structure represented by formula (I): wherein Ar1 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms; K is a hole transport unit; n1 is selected from any integer from 1 to 6.

13. The luminescent material composition according to claim 12, characterized in that: K is selected from one or more of the following structures: Among them, Ar 11 is selected from a substituted or unsubstituted aromatic group having 6 to 40 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 40 carbon atoms; Y1 and Y2 are independently selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4) or P(R3); R1, R2, R3, and R4 are independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

14. The luminescent material composition according to claim 12, characterized in that: The Ar1 and K are each independently selected from one or more of the following structures: in, Y1, Y2 are selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4) or P(R3); R1, R3, and R4 are independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

15. The luminescent material composition according to claim 1, characterized in that: The first electron donor material includes at least one of the compounds shown in the following structural formula:

16. The luminescent material composition according to claim 1, characterized in that: The second electron donor material includes at least one of the compounds shown in the following structural formula:

17. The luminescent material composition according to claim 1, characterized in that: The first electron acceptor material and the second electron acceptor material are each independently a structure represented by formula (II): wherein Ar2 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms; A is an electron transfer unit; m1 is selected from integers of 1 to 6.

18. The luminescent material composition according to claim 17, characterized in that: The electron transport unit is selected from F, cyano or one or more of the following groups: in, a is 1, 2, or 3; X 1 To X 8 Each is independently selected from CR7 or N, and at least one is N; M 1 、M 2 、M 3 Each independently represents N(R7), C(R7R8), Si(R7R8), O, C=N(R7), C=C(R7R8), P(R7), P(=O)R7, S, S=O, SO2 or none; R7 and R8 are independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

19. The luminescent material composition according to claim 17, characterized in that: The electron transport unit is selected from:

20. The luminescent material composition according to claim 1, characterized in that: The first electron acceptor material includes at least one of the compounds shown in the following structural formula:

21. The luminescent material composition according to claim 1, characterized in that: The second electron acceptor material includes at least one of the compounds shown in the following structural formula:

22. The luminescent material composition according to claim 1, characterized in that: The guest material is selected from phosphorescent guest materials, fluorescent guest materials, and thermally activated delayed fluorescent guest materials.

23. An ink, characterized in that: The invention comprises a solvent and the luminescent material composition according to any one of claims 1 to 22.

24. The ink according to claim 23, characterized in that In the ink, the mass concentration of the luminescent material composition is 1 to 10%; The solvent includes one or more of aromatic hydrocarbon compounds, aromatic ester compounds, alkane compounds, aromatic hydrocarbon compounds, ether compounds, ketone compounds, and amine compounds.

25. A light-emitting device, comprising an anode, a light-emitting layer and a cathode stacked in sequence, characterized in that: The material of the light-emitting layer includes the light-emitting material composition according to any one of claims 1 to 22.

26. The light emitting device according to claim 25, characterized in that The anode and the cathode independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal single substance electrode or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, zinc-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / APC / AZO, ITO / Ag / ITO, ITO / APC / ITO, IZO / Ag / IZO, IZO / A PC / IZO, ZnO / Ag / ZnO, ZnO / APC / ZnO, TiO2 / Ag / TiO2, TiO2 / APC / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al, the material of the metal single substance electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba, and the alloy electrode includes Au:Mg alloy electrode or Ag:Mg alloy electrode; and / or The photoelectric device further comprises a hole transport layer, which is located between the anode and the light-emitting layer. The material of the hole transport layer comprises HTM014, HTM081, HTM163, HTM222, NHT 5, NHT 18, NHT 49, NHT51, EL-301, EL-22T, 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)benzidine 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro NPB , poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4' - one or more of bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The photoelectric device further comprises a hole injection layer, which is located between the anode and the light-emitting layer. The material of the hole injection layer comprises NDP 2, NDP 9. One or more of F4-TCNQ, F6-TCNNQ, tetrafluorotetracyanoquinodimethane, 7,7,8,8-tetracyanobenzoquinodimethane, 4,4',4"-tris(2-naphthylphenylamino)triphenylamine, perylenetetracarboxylic dianhydride, pentacene, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, derivatives of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, copper hexadecafluorophthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide; The light-emitting device further comprises an electron transport layer, which is located between the light-emitting layer and the cathode. The material of the electron transport layer is selected from one or more of an inorganic electron transport material and an organic electron transport material. The inorganic electron transport material comprises one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the undoped metal oxide particles comprises one or more of ZnO, TiO2, SnO2, ZrO2 and Ta2O5. The metal in the doped metal oxide particles comprises one or more of The oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3, the doping elements in the doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS, the IIIA-VA semiconductor material includes one or more of InP and GaP, the IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS, the organic electron transport material includes NET 164, NDN 87, NDN 45, NDN 18, NDN 218, ET093, ETM020, ETM033, ETM034, ETM036, 4,6-bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri(1-phenyl-1H-benzimidazol-2-yl)benzene, 8-hydroxyquinoline aluminum, 8-hydroxyquinoline lithium, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum Alq3, ionic conjugated polyelectrolyte or more; and / or The light-emitting device further includes an electron injection layer, which is located between the electron transport layer and the cathode, and the material of the electron injection layer includes one or more of Yb, yttrium fluoride, Li, LiF, NaF, CsCO3, Cs, KBH4 and KH.

27. A display device, characterized in that: The display device comprises the light emitting device according to any one of claims 25 to 26.

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