Quantum dot information encryption access method and device, computing equipment and storage medium

Abstract

The embodiment of the invention provides a quantum dot information encryption access method and device, computing equipment and a storage medium, and belongs to the technical field of optical storage, and the method comprises the following steps: carrying out an exposure experiment on a quantum dot photoresist storage layer through a direct-writing photoetching system to obtain a relation curve of exposure parameters and excitation light intensity; multiplying and accumulating the original data matrix corresponding to the to-be-stored information and a group of random key matrixes to obtain encrypted data; according to the relation curve, recording the encrypted data on the quantum dot photoresist storage layer through a direct writing photoetching system; quantum dot excitation is carried out on the storage layer after data recording is completed, the excitation light intensity is detected, and an excitation light intensity vector is obtained; and performing second-order association reconstruction operation on the excitation light intensity vector and the random key matrix to recover original data. According to the scheme, efficient and high-precision encrypted storage and reading of data can be realized, and high-precision data positioning is realized.

Description

Technical Field

[0001] The present invention relates to the field of information storage technology, and in particular to a quantum dot information encryption access method, device, computing equipment and storage medium. Background Art

[0002] With the rapid development of information technology, the demand for data storage is growing. How to store large-scale data safely and efficiently has become a research topic of widespread concern. At present, data storage methods mainly rely on electronic storage devices and software-based encryption algorithms. This method has the risk of high power consumption, vulnerability to damage or attack, and data tampering. Traditional optical storage technology mainly relies on lasers to use complex optical systems to burn and read data, and records data through concave and convex structures. Although this method is widely used in media such as CDs and DVDs, its data storage density is limited and has approached its capacity limit. It has low confidentiality and is easily affected by physical damage and environmental factors. It cannot meet the needs of massive data storage.

[0003] As a new type of storage technology, quantum dot information storage has attracted widespread attention for its high storage density, low energy consumption, fast read and write capabilities, and good stability. Quantum dot storage technology relies on the photoelectric properties of quantum dots. Among them, quantum dots are nanoscale semiconductor particles with sizes ranging from a few nanometers to tens of nanometers. When quantum dots are excited by external light sources, the electrons inside jump from the valence band to the conduction band to form electron-hole pairs. When the baseband is restored, these electron-hole pairs recombine through radiation and release photons with specific wavelengths, namely photoluminescence. The photoluminescence properties of quantum dots enable them to encode and decode information. However, existing quantum dot storage technology does not take into account the confidentiality of information storage and the efficiency and cost of reading and writing. Summary of the invention

[0004] In order to overcome the problems existing in the prior art, this scheme proposes a quantum dot information encryption access method, device, computing equipment and storage medium, which encrypts and decrypts the information to be stored by introducing a computational ghost imaging algorithm, and achieves high-resolution burning through a direct write lithography system, and utilizes the optical properties of quantum dots to achieve high-density, efficient and secure information access.

[0005] According to a first aspect of the present invention, a quantum dot information encryption access method is provided, comprising: performing an exposure experiment on a quantum dot photoresist storage layer through a direct write lithography system to obtain a relationship curve between exposure parameters and excitation light intensity; multiplying and accumulating an original data matrix corresponding to the information to be stored with a set of random key matrices to obtain encrypted data; according to the relationship curve, burning the encrypted data on the quantum dot photoresist storage layer through a direct write lithography system; performing quantum dot excitation on the storage layer after the data is burned, detecting the excitation light intensity, and obtaining an excitation light intensity vector; performing a second-order correlation reconstruction operation on the excitation light intensity vector and the random key matrix to restore the original data.

[0006] By adopting the above technical solution, data is encrypted using a random key that conforms to the computational ghost imaging algorithm. The recovery of the encrypted data only requires the use of the original random key matrix. The original data can be accurately reconstructed through mathematical operations, which can achieve efficient, high-precision encrypted storage and reading of data. The data is burned on the quantum dot substrate through a direct write lithography system, which avoids additional hardware equipment, simplifies the system design, and reduces the size and power consumption.

[0007] Optionally, in the quantum dot information encryption and access method provided by the present invention, a quantum dot photoresist is evenly spin-coated on a substrate to prepare a storage layer, the substrate is any one of a silicon substrate, glass, and sapphire, and the quantum dot photoresist is any one of a CsPbBr3 inorganic perovskite quantum dot photoresist and a silicon-based quantum dot photoresist; the storage layer is evenly divided into a plurality of storage units of equal area; the photoluminescence intensity of the quantum dot photoresist is detected by adjusting the exposure time, driving voltage, and driving current in the storage unit, and a relationship curve between the exposure parameters and the photoluminescence intensity is recorded.

[0008] Optionally, in the quantum dot information encryption access method provided by the present invention, the driving voltage and driving current of the direct write lithography system power supply are set, the quantum photoresist on the storage unit is exposed by adjusting different exposure times, the corresponding photoluminescence intensity is detected and recorded, and a relationship curve between the exposure time and the luminescence intensity of the quantum dot photoresist is obtained; or Setting the driving voltage and exposure time of the direct write lithography system power supply, exposing the quantum dot photoresist on the storage unit by adjusting different driving currents, detecting and recording the corresponding photoluminescence intensity, and obtaining a relationship curve between the driving current and the luminescence intensity of the quantum dot photoresist; or The driving current and exposure time of the direct-write lithography system power supply are set, and the quantum photoresist on the storage unit is exposed by adjusting different driving voltages. The corresponding photoluminescence intensity is detected and recorded to obtain a relationship curve between the driving voltage and the luminescence intensity of the quantum dot photoresist.

[0009] By adopting the above technical solution, the storage layer is evenly divided into multiple storage units of equal area, which helps to optimize the organizational structure of data and make data access more efficient; by recording the relationship between exposure parameters and photoluminescence intensity, a basis is provided for reliable data reading.

[0010] Optionally, in the quantum dot information encryption and access method provided by the present invention, a random pattern generator in computational ghost imaging is used to randomly generate multiple Hadamard matrices, and the size of the Hadamard matrix is ​​the same as the size of the original data matrix; each Hadamard matrix is ​​subjected to matrix multiplication operation with the original data matrix, and the results are accumulated to obtain encrypted data.

[0011] By adopting the above technical solution and using a randomly generated Hadamard matrix for encryption, each encryption process is unique, which enhances the security of the encrypted data.

[0012] Optionally, in the quantum dot information encryption and access method provided by the present invention, the exposure time of each storage unit corresponding to the encrypted data is set according to the experimentally measured relationship curve between the exposure time and the excitation light intensity; the quantum dot photoresist storage layer is fixed on an electric translation stage, and the storage units are exposed in sequence according to the stepping of the center distance between adjacent storage units; the exposed storage layer is immersed in a developer for development, and the developed storage layer is rinsed and dried to complete the encrypted storage of the information.

[0013] Optionally, in the quantum dot information encryption access method provided by the present invention, the storage layer after data burning is fixed on an electric translation table, and each storage unit is excited in steps according to the center spacing between adjacent storage units; the excitation light intensity of each storage unit is detected by a photodetector to obtain the excitation light intensity vector, and the position of the data reading starting point is determined according to the change in light intensity.

[0014] Optionally, in the quantum dot information encryption access method provided by the present invention, the arithmetic mean of multiple Hadamard matrices and the arithmetic mean of the excitation light intensity vector are calculated; the measured excitation light intensity and its arithmetic mean are subjected to a second-order correlation reconstruction operation with multiple Hadamard matrices and their arithmetic mean by the following formula to restore the original data: Where S is the measured excitation light intensity, S i is the arithmetic mean of the excitation light intensity, M(x,y) is the Hadamard matrix, M i (x, y) is the arithmetic mean of the Hadamard matrix, I(x, y) is the restored original data, the value range of x and y is [0, n-1], n is the dimension of the Hadamard matrix, and N is the number of Hadamard matrices.

[0015] According to a second aspect of the present invention, there is provided a quantum dot information encryption storage and access device, comprising: a pre-experimental module, an encryption module, a recording module, a detection module and a decryption module.

[0016] Among them, the pre-experimental module is used to perform an exposure experiment on the quantum dot photoresist storage layer through a direct write lithography system to obtain a relationship curve between exposure parameters and excitation light intensity; the encryption module is used to multiply and accumulate the original data matrix corresponding to the storage information with a group of random key matrices to obtain encrypted data; the burning module is used to burn the encrypted data obtained by the encryption module on the quantum dot photoresist storage layer through a direct write lithography system according to the relationship curve obtained by the pre-experimental module; the detection module is used to perform quantum dot excitation on the storage layer after the data is burned, detect the excitation light intensity, and obtain the excitation light intensity vector; the decryption module is used to perform a second-order correlation reconstruction operation on the excitation light intensity vector and the random key matrix to restore the original data.

[0017] According to a third aspect of the present invention, a computing device is provided, comprising: at least one processor; and a memory storing program instructions, wherein the program instructions are configured to be suitable for execution by at least one processor, and the program instructions include instructions for executing the quantum dot information encryption access method as described above.

[0018] According to a fourth aspect of the present invention, a readable storage medium storing program instructions is provided. When the program instructions are read and executed by a computing device, the computing device executes the quantum dot information encryption access method as described above.

[0019] In summary, the quantum dot information encryption access method and device provided by the present invention can at least achieve the following technical effects: 1. Compress and encrypt data based on computational ghost imaging algorithms, achieve high-resolution recording, greatly increase storage capacity, improve the security and efficiency of information storage and reading processes, and effectively prevent data from being illegally accessed or tampered with; 2. It avoids complex optical system design, reduces data access costs and system power consumption, and the high stability and anti-aging ability of quantum dot materials ensure long-term and reliable data storage; 3. The storage layer is scanned and excited by an excitation light source until the excitation light intensity is detected to be equal to the light intensity corresponding to the starting point, thereby determining the position of the data reading starting point and achieving high-precision positioning of the data.

[0020] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic diagram of the structure of a computing device 100 according to an embodiment of the present invention is shown; Figure 2 A schematic diagram of the process of a quantum dot information encryption access method 200 according to an embodiment of the present invention is shown; Figure 3 A schematic diagram of storage area division of a storage layer according to an embodiment of the present invention is shown; Figure 4 A schematic diagram of a curve showing the relationship between exposure time and photoluminescence intensity according to an embodiment of the present invention is shown; Figure 5 A schematic diagram of storage unit burning according to an embodiment of the present invention is shown; Figure 6 A schematic structural diagram of a quantum dot information encryption storage and access device 600 according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0022] Based on the unique optical properties of quantum dots, this scheme proposes a quantum dot information encryption access method, which encrypts the information to be stored through a random key matrix based on a computational ghost imaging algorithm (correlation imaging / scattering imaging), and then burns the encrypted information onto a substrate coated with quantum dot photoresist through a direct write lithography system. By stimulating the light intensity signal generated by quantum dots and decrypting it in combination with a random key matrix to restore the data, higher storage density and security, stronger resistance to physical damage, and lower power consumption and cost can be achieved.

[0023] In this data access scheme, the storage layer is scanned and excited by the excitation light source, and the starting position of the data is determined by the detected light intensity change, which can achieve high-precision positioning of the data. Once the starting bit information is accurately located, the data reading process can start correctly, which can effectively reduce data loss or erroneous reading caused by positioning errors.

[0024] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0025] Figure 1 FIG. 1 is a schematic diagram showing the structure of a computing device 100 according to an embodiment of the present invention. Figure 1As shown, in a basic configuration 102, computing device 100 typically includes system memory 106 and one or more processors 104. A memory bus 108 may be used for communication between processor 104 and system memory 106.

[0026] Depending on the desired configuration, the processor 104 can be any type of processor, including but not limited to: a microprocessor (μP), a microcontroller (μC), a digital information processor (DSP), or any combination thereof. The processor 104 can include one or more levels of cache such as a first-level cache 110 and a second-level cache 112, a processor core 114, and registers 116. An example processor core 114 can include an arithmetic logic unit (ALU), a floating point unit (FPU), a digital signal processing core (DSP core), or any combination thereof. An example memory controller 118 can be used with the processor 104, or in some implementations, the memory controller 118 can be an internal part of the processor 104.

[0027] Depending on the desired configuration, the system memory 106 can be any type of memory, including but not limited to: volatile memory (such as RAM), non-volatile memory (such as ROM, flash memory, etc.) or any combination thereof. The physical memory in the computing device usually refers to the volatile memory RAM, and the data in the disk needs to be loaded into the physical memory before it can be read by the processor 104. The system memory 106 may include an operating system 120, one or more applications 122, and program data 124. The application 122 is actually a plurality of program instructions, which are used to instruct the processor 104 to perform corresponding operations. In some embodiments, in some embodiments, the application 122 can be arranged to execute instructions on the operating system by one or more processors 104 using the program data 124. The operating system 120 can be, for example, Linux, Windows, etc., which includes program instructions for processing basic system services and performing tasks that depend on hardware. The application 122 includes program instructions for implementing various user-desired functions. The application 122 can be, for example, a browser, instant messaging software, a software development tool (such as an integrated development environment IDE, a compiler, etc.), etc., but is not limited thereto. When the application 122 is installed into the computing device 100 , a driver module may be added to the operating system 120 .

[0028] When the computing device 100 starts running, the processor 104 reads and executes the program instructions of the operating system 120 from the memory 106. The application 122 runs on the operating system 120 and uses the interfaces provided by the operating system 120 and the underlying hardware to implement various functions desired by the user. When the user starts the application 122, the application 122 is loaded into the memory 106, and the processor 104 reads and executes the program instructions of the application 122 from the memory 106.

[0029] Computing device 100 also includes a storage device 132 including a removable storage 136 and a non-removable storage 138 , both of which are connected to storage interface bus 134 .

[0030] The computing device 100 may also include an interface bus 140 that facilitates communication from various interface devices (e.g., output devices 142, peripheral interfaces 144, and communication devices 146) to the basic configuration 102 via the interface controller 130. Example output devices 142 include a graphics processing unit 148 and an audio processing unit 150. They can be configured to facilitate communication with various external devices such as a display or speakers via one or more A / V ports 152. Example peripheral interfaces 144 may include a serial interface controller 154 and a parallel interface controller 156, which may be configured to facilitate communication with external devices such as input devices (e.g., keyboards, mice, pens, voice input devices, touch input devices) or other peripherals (e.g., printers, scanners, etc.) via one or more I / O ports 158. Example communication devices 146 may include a network controller 160, which may be arranged to facilitate communication with one or more other computing devices 162 via a network communication link via one or more communication ports 164.

[0031] A network communication link can be an example of a communication medium. Communication media can generally be embodied as computer-readable instructions, data structures, program modules in a modulated data signal such as a carrier wave or other transmission mechanism, and can include any information delivery medium. A "modulated data signal" can be a signal in which one or more of its data sets or its changes can be carried out in a manner that encodes information in the signal. As non-limiting examples, communication media can include wired media such as a wired network or a dedicated line network, and various wireless media such as sound, radio frequency (RF), microwave, infrared (IR) or other wireless media. The term computer-readable medium used herein can include both storage media and communication media.

[0032] The computing device 100 also includes a storage interface bus 134 connected to the bus / interface controller 130. The storage interface bus 134 is connected to a storage device 132, which is suitable for data storage. Example storage devices 132 may include removable storage 136 (such as CD, DVD, USB flash drive, removable hard disk, etc.) and non-removable storage 138 (such as hard disk drive HDD, etc.).

[0033] In the computing device 100 according to the present invention, the application 122 includes a plurality of program instructions for executing the quantum dot information encryption access method 200 of the present invention.

[0034] Figure 2 FIG. 2 is a flow chart of a quantum dot information encryption access method 200 according to an embodiment of the present invention. Figure 2 As shown, first in step S210, an exposure experiment is performed on the quantum dot photoresist storage layer through a direct write lithography system to obtain a relationship curve between exposure parameters and excitation light intensity.

[0035] Quantum dot photoresist is a photoresist containing quantum dots (semiconductor light-emitting materials) as additives or main components. It has photoluminescent properties, which enables quantum dot photoresist to achieve high resolution on a smaller scale during patterning. In order to obtain the relationship curve between exposure parameters and the luminescence intensity of quantum dot photoresist, a direct write lithography system can be used to control the exposure intensity and exposure position of the laser beam through a computer to achieve digital exposure of quantum dot photoresist.

[0036] Specifically, the quantum dot photoresist can be spin-coated on the substrate at a certain speed and time through a glue spreader to prepare a storage layer of uniform thickness. The substrate can be a silicon substrate, glass, sapphire and other materials. The appropriate substrate can be selected according to the specific application requirements, and this scheme does not limit this. The quantum dot photoresist is any one of CsPbBr3 inorganic perovskite quantum dot photoresist and silicon-based quantum dot photoresist. CsPbBr3 inorganic perovskite quantum dot photoresist can be synthesized by hot injection method, and the average particle size is about 10nm. Silicon-based quantum dot photoresist can be synthesized by growth and thermal atomic evaporation method, and the particle size range is between 1-10nm. Before spin coating, ensure that there is no dust on the surface of the substrate, and the photoresist can be baked for a certain time after spin coating.

[0037] Then the storage area of ​​the storage layer is divided to obtain a series of storage units with equal areas. Only one exposure is performed in each storage unit, and the maximum size of the exposure is smaller than the area of ​​the storage unit. Figure 3 FIG. 2 shows a schematic diagram of storage area division of a storage layer according to an embodiment of the present invention. Figure 3 As shown, the storage area is divided into a series of 1 μm 2The center spacing of adjacent regions is 2 μm, and the maximum size of the exposure should be less than 1 μm. 2 .

[0038] The storage layer is pre-exposed using a direct write lithography system to obtain an exposure relationship curve between the photoluminescence intensity (i.e., PL intensity) of the quantum dot photoresist and the exposure parameters. The optimal exposure driving conditions are found by comparing the photoluminescence intensity under different parameter conditions.

[0039] For example, the driving voltage and driving current of the light source of the direct-write lithography system are set, the quantum photoresist on the storage layer is exposed by adjusting different exposure times, the corresponding photoluminescence intensity is detected and recorded, and a relationship curve between the exposure time and the luminescence intensity of the quantum dot photoresist is obtained.

[0040] Alternatively, the driving voltage and exposure time of the light source of the direct-write lithography system are set, and the quantum dot photoresist on the storage layer is exposed by adjusting different driving currents, and the corresponding photoluminescence intensity is detected and recorded to obtain a relationship curve between the driving current and the luminescence intensity of the quantum dot photoresist; or The driving current and exposure time of the light source of the direct-write lithography system are set, and the quantum photoresist on the storage layer is exposed by adjusting different driving voltages. The corresponding photoluminescence intensity is detected and recorded to obtain a relationship curve between the driving voltage and the luminescence intensity of the quantum dot photoresist.

[0041] The requirement for the control parameters is that the control granularity is as fine as possible, and the relationship curve is determined using curve fitting technology (such as the least squares method). Figure 4 FIG. 2 shows a curve diagram showing the relationship between exposure time and photoluminescence intensity according to an embodiment of the present invention. Figure 4 As shown, the X-axis represents the exposure time and the Y-axis represents the measured photoluminescence intensity. The shape of the curve may show the following characteristics: In the low exposure time range, the photoluminescence intensity increases linearly with the increase of exposure time, indicating that the number of quantum dots increases with the increase of exposure time. When the exposure time reaches a certain threshold, the photoluminescence intensity tends to saturation, indicating that the number of quantum dots has reached an upper limit. By analyzing the relationship curve, the optimal exposure time can be determined to achieve the best match between the number of quantum dots and the photoluminescence intensity.

[0042] Then in step S220, the original data matrix corresponding to the information to be stored is multiplied and accumulated with a set of key matrices to obtain encrypted data.

[0043] The information to be stored may be images, videos, text or other forms of information. First, the data to be stored is converted into a binary image form. In one embodiment of the present invention, a set of key matrices is randomly generated using a random pattern generator in computational ghost imaging, and the key matrix matches the size of the original matrix so that matrix multiplication can be performed.

[0044] For example, 4096 64×64 Hadamard matrices are generated as key matrices to encrypt images with a grayscale of 256. The Hadamard matrix is ​​an orthogonal matrix, and each matrix is ​​orthogonal to other matrices, which means that each encryption operation is independent and will not interfere with each other, ensuring the integrity of the encryption process and the independence of the data. Before encryption, the original matrix can be normalized or zero-filled. The product of the key matrix and the original data matrix is ​​calculated and accumulated to generate the encrypted data.

[0045] Then in step S230, the encrypted data is recorded on the quantum dot photoresist storage layer by a direct write lithography system according to the relationship curve.

[0046] After data encryption, the data of each storage unit is converted into the corresponding exposure time. According to the relationship curve between exposure time and PL intensity measured in the exposure pre-experiment, the exposure parameters of the direct write lithography system are set. For example, the light source of the lithography system is a purple micro-LED with a wavelength of 365nm and a size of 10μm×10μm. The driving voltage, current and lighting time are controlled by a high-precision power supply. The small size of Micro-LED enables lithography to be performed at the micron level of accuracy.

[0047] Figure 5 FIG. 2 shows a schematic diagram of a storage unit recording according to an embodiment of the present invention. Figure 5 As shown, the exposure time (exposure amount) of different storage units may be different. The exposure time of each storage unit is calculated according to the proportional relationship between different data points of the encrypted data, and the storage units are automatically burned in sequence according to the calculated exposure time.

[0048] It should be noted that the first data bit (i.e., the starting point) of the storage layer has a different light intensity characteristic from other bits. The storage layer is fixed on a precision electric translation stage, and the storage layer is moved with the center distance between adjacent storage cells as the step length. The storage cells are exposed one by one using a direct write lithography system. The exposed storage layer is immersed in a developer for development, and the developed storage layer is rinsed and dried to complete the burning of the encrypted data.

[0049] In step S240, the storage layer after data recording is quantum dot excited, the intensity of the excitation light is detected, and the excitation light intensity vector is obtained.

[0050] The data of the burned storage layer can be read by a reading device. For example, the light source of the reading device uses a blue light micro-LED with a wavelength of 450nm and a size of 10μm×10μm. The light spot size of the light source is adjusted to just cover the storage unit. The burned storage layer is fixed on a precision electric translation stage and moves with the center distance between adjacent storage units as the step length. The quantum dots in each storage unit are excited in turn, and the photoluminescence intensity of the quantum dots is collected by the photodetector. The read data is stored in the form of a vector to obtain the excitation light intensity vector.

[0051] According to one embodiment of the present invention, the reading device can accurately locate the position of the data reading starting point through the detected light intensity change. Once the starting bit information is accurately located, the data reading process can start to read correctly, which can effectively reduce data loss or erroneous reading caused by positioning errors.

[0052] Finally, in step S250, a second-order correlation reconstruction operation is performed on the excitation light intensity vector and the random key matrix to restore the original data.

[0053] Specifically, the arithmetic mean of multiple Hadamard matrices and the arithmetic mean of the excitation light intensity data can be calculated. Multiple Hadamard matrices represent different random keys or different perspectives for encryption. Through their arithmetic mean, some fluctuations in randomness can be eliminated, making the data recovery process more stable. By calculating the average value of these excitation light intensity data, noise or accidental errors can be eliminated, making the data smoother, which is helpful for the subsequent reconstruction process.

[0054] Then, the measured excitation light intensity and its arithmetic mean are subjected to a second-order correlation reconstruction operation with multiple Hadamard matrices and their arithmetic mean to restore the original data. This can be calculated using the following formula: Where S is the measured excitation light intensity, S i is the arithmetic mean of the excitation light intensity, M(x,y) is the Hadamard matrix, M i (x, y) is the arithmetic mean of the Hadamard matrix, I(x, y) is the restored original data, the value range of x and y is [0, n-1], n is the dimension of the Hadamard matrix, and N is the number of Hadamard matrices.

[0055] Figure 6 FIG. 6 is a schematic diagram showing the structure of a quantum dot information encryption storage and access device 600 according to an embodiment of the present invention. Figure 6As shown, the device 600 includes: a pre-experimental module 610, an encryption module 620, a burning module 630, a detection module 640 and a decryption module 650.

[0056] The pre-experimental module 610 can perform an exposure experiment on the quantum dot photoresist storage layer through a direct-write lithography system to obtain a relationship curve between exposure parameters and excitation light intensity.

[0057] For example, the driving voltage and driving current parameters of the light source can be fixedly set, and the photoluminescence intensity of the quantum dots in the storage layer can be controlled by adjusting the exposure time to obtain an exposure time-quantum dot photoresist photoluminescence intensity relationship curve.

[0058] The encryption module 620 multiplies and accumulates the original data matrix corresponding to the information to be stored with a set of random key matrices to obtain encrypted data. For example, 4096 64×64 Hadamard matrices are generated and used as keys to encrypt an image with a grayscale of 256. Each matrix is ​​sequentially multiplied and accumulated with the original data to obtain encrypted data.

[0059] The burning module 630 can burn the encrypted data obtained by the encryption module on the quantum dot photoresist storage layer through the direct writing lithography system according to the relationship curve obtained by the pre-experimental module. For example, the storage layer is lithographed by the direct writing lithography system, and the storage layer is fixed on the precision electric displacement stage and moves with a step length of 2μm of the adjacent storage unit. The light source of the lithography system is a purple light micro-LED with a wavelength of 365nm and a size of 10μm×10μm. The driving voltage, current and lighting time are controlled by a high-precision power supply. According to the experimentally measured exposure time-excitation light intensity relationship curve, according to the proportional relationship between the encrypted data, the storage units are automatically burned in sequence. The detection module 640 can perform quantum dot excitation on the storage layer after the data is burned, detect the excitation light intensity, and obtain the excitation light intensity vector. For example, data is read from the developed storage layer through a reading device. The light source of the device adopts a blue light micro-LED with a wavelength of 450nm and a size of 10μm×10μm. The spot size of the light source is adjusted to just cover the storage unit. The developed storage layer is fixed on a precision electric translation stage and moves in steps of the center distance between adjacent storage units. The quantum dots in each storage unit are excited in turn, and the photoluminescence intensity of the quantum dots is collected by the photodetector.

[0060] The decryption module 650 can perform a second-order correlation reconstruction operation on the excitation light intensity vector and the random key matrix to restore the original data. For example, the arithmetic mean of multiple Hadamard matrices and the arithmetic mean of the excitation light intensity vector are calculated. The measured excitation light intensity and its arithmetic mean are performed on multiple Hadamard matrices and their arithmetic mean to restore the original data by performing a second-order correlation reconstruction operation on the measured excitation light intensity and its arithmetic mean, and multiple Hadamard matrices and their arithmetic mean, using the following formula: Where S is the measured excitation light intensity, S i is the arithmetic mean of the excitation light intensity, M(x,y) is the Hadamard matrix, M i (x, y) is the arithmetic mean of the Hadamard matrix, I(x, y) is the restored original data, the value range of x and y is [0, n-1], n is the dimension of the Hadamard matrix, and N is the number of Hadamard matrices.

[0061] The quantum dot information encryption access method and device provided by the present invention can at least achieve the following technical effects: 1. Compress and encrypt data based on computational ghost imaging algorithms, achieve high-resolution recording, greatly increase storage capacity, improve the security and efficiency of information storage and reading processes, and effectively prevent data from being illegally accessed or tampered with; 2. It avoids complex optical system design, reduces data access costs and system power consumption, and the high stability and anti-aging ability of quantum dot materials ensure long-term and reliable data storage; 3. The storage layer is scanned and excited by an excitation light source until the excitation light intensity is detected to be equal to the light intensity corresponding to the starting point, thereby determining the position of the data reading starting point and achieving high-precision positioning of the data.

[0062] In the description provided herein, a large number of specific details are described. However, it is understood that embodiments of the present invention can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not shown in detail so as not to obscure the understanding of this description.

[0063] Similarly, it should be understood that in order to streamline the present disclosure and aid in understanding one or more of the various inventive aspects, in the above description of exemplary embodiments of the present invention, the various features of the present invention are sometimes grouped together into a single embodiment, figure, or description thereof. However, this disclosed method should not be interpreted as reflecting the following intention: that the claimed invention requires more features than the features explicitly recited in each claim. More specifically, as reflected in the claims below, inventive aspects lie in less than all the features of the individual embodiments disclosed above. Therefore, the claims that follow the specific embodiment are hereby expressly incorporated into the specific embodiment, with each claim itself serving as a separate embodiment of the present invention.

[0064] Those skilled in the art will appreciate that the modules or units or components of the devices in the examples disclosed herein may be arranged in the devices described in the embodiment, or alternatively may be located in one or more devices different from the devices in the examples. The modules in the foregoing examples may be combined into one module or may be divided into multiple submodules.

[0065] Those skilled in the art will appreciate that the modules in the devices in the embodiments may be adaptively changed and arranged in one or more devices different from the embodiments. The modules or units or components in the embodiments may be combined into one module or unit or component, and in addition they may be divided into a plurality of submodules or subunits or subcomponents. Except that at least some of such features and / or processes or units are mutually exclusive, all features disclosed in this specification (including the accompanying claims, abstracts and drawings) and all processes or units of any method or device disclosed in this manner may be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstracts and drawings) may be replaced by an alternative feature providing the same, equivalent or similar purpose.

[0066] As used herein, unless otherwise specified, the use of ordinal numbers "first," "second," "third," etc. to describe common objects merely indicates that different instances of similar objects are involved, and is not intended to imply that the objects so described must have a given order in time, space, order, or in any other manner.

[0067] Although the present invention has been described according to a limited number of embodiments, it will be apparent to those skilled in the art, with the benefit of the above description, that other embodiments may be envisioned within the scope of the invention thus described. In addition, it should be noted that the language used in this specification is selected primarily for readability and teaching purposes, rather than for explaining or defining the subject matter of the present invention. Therefore, many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the appended claims. The disclosure of the present invention is illustrative and not restrictive with respect to the scope of the present invention, and the scope of the present invention is defined by the appended claims.

Claims

1. A quantum dot information encryption access method, characterized in that: include: Exposure experiments were performed on the quantum dot photoresist storage layer using a direct-write lithography system to obtain a curve showing the relationship between exposure parameters and excitation light intensity; The original data matrix corresponding to the information to be stored is multiplied and accumulated with a set of random key matrices to obtain encrypted data; According to the relationship curve, recording the encrypted data on the quantum dot photoresist storage layer by the direct write lithography system; After the data is recorded, the storage layer is quantum dot excited, the excitation light intensity is detected, and the excitation light intensity vector is obtained; The excitation light intensity vector and the random key matrix are subjected to a second-order correlation reconstruction operation to restore the original data.

2. The quantum dot information encryption access method according to claim 1, characterized in that: The step of performing an exposure experiment on the quantum dot photoresist storage layer by a direct write lithography system to obtain a curve of the relationship between exposure parameters and excitation light intensity comprises: The quantum dot photoresist is uniformly spin-coated on the substrate to prepare a storage layer, wherein the substrate is any one of a silicon substrate, glass, and sapphire, and the quantum dot photoresist is any one of a CsPbBr3 inorganic perovskite quantum dot photoresist and a silicon-based quantum dot photoresist; Evenly dividing the storage layer into a plurality of storage units of equal area; By adjusting the exposure time, driving voltage and driving current in the storage unit, the photoluminescence intensity of the quantum dot photoresist is detected, and a relationship curve between the exposure parameters and the photoluminescence intensity is recorded.

3. The quantum dot information encryption access method according to claim 2, characterized in that: The step of adjusting the exposure time, driving voltage and driving current in the storage unit to detect the photoluminescence intensity of the quantum dot photoresist and recording the relationship curve between the exposure parameters and the photoluminescence intensity comprises: Setting the driving voltage and driving current of the power supply of the direct write lithography system, exposing the quantum dot photoresist on the storage unit by adjusting different exposure times, detecting and recording the corresponding photoluminescence intensity, and obtaining a relationship curve between the exposure time and the luminescence intensity of the quantum dot photoresist; or Setting the driving voltage and exposure time of the direct write lithography system power supply, exposing the quantum dot photoresist on the storage unit by adjusting different driving currents, detecting and recording the corresponding photoluminescence intensity, and obtaining a relationship curve between the driving current and the luminescence intensity of the quantum dot photoresist; or The driving current and exposure time of the direct-write lithography system power supply are set, and the quantum photoresist on the storage unit is exposed by adjusting different driving voltages. The corresponding photoluminescence intensity is detected and recorded to obtain a relationship curve between the driving voltage and the luminescence intensity of the quantum dot photoresist.

4. The quantum dot information encryption access method according to claim 1, characterized in that: The step of multiplying and accumulating the original data matrix corresponding to the information to be stored and a set of random key matrices to obtain encrypted data includes: A random pattern generator in computational ghost imaging is used to randomly generate a plurality of Hadamard matrices, wherein the size of the Hadamard matrices is the same as the size of the original data matrix; Perform matrix multiplication operation on each Hadamard matrix and the original data matrix, and accumulate the results to obtain the encrypted data.

5. The quantum dot information encryption access method according to claim 4, characterized in that: The step of recording the encrypted data on the quantum dot photoresist storage layer by the direct write lithography system according to the relationship curve comprises: According to the experimentally measured relationship curve between exposure time and excitation light intensity, the exposure time of each storage unit corresponding to the encrypted data is set; The quantum dot photoresist storage layer is fixed on an electric translation stage, and the storage units are sequentially exposed according to the center distance between adjacent storage units; The exposed storage layer is immersed in a developer for development, and the developed storage layer is rinsed and dried to complete the encrypted storage of information.

6. The quantum dot information encryption access method according to claim 5, characterized in that: The step of performing quantum dot excitation on the storage layer after data recording, detecting the intensity of the excitation light, and obtaining the excitation light intensity vector comprises: The storage layer after data recording is fixed on the electric translation stage, and each storage unit is excited step by step according to the center distance between adjacent storage units; The excitation light intensity of each storage unit is detected by a photoelectric detector to obtain an excitation light intensity vector, and the position of the data reading starting point is determined according to the light intensity change.

7. The quantum dot information encryption access method according to claim 6, characterized in that: The step of performing a second-order correlation reconstruction operation on the excitation light intensity vector and the random key matrix to restore the original data comprises: Calculating the arithmetic mean of the multiple Hadamard matrices and the arithmetic mean of the excitation light intensity vector; The measured excitation light intensity and its arithmetic mean are reconstructed by performing a second-order correlation operation with multiple Hadamard matrices and their arithmetic mean to restore the original data using the following formula: Where S is the measured excitation light intensity, S i is the arithmetic mean of the excitation light intensity, M(x,y) is the Hadamard matrix, M i (x, y) is the arithmetic mean of the Hadamard matrix, I(x, y) is the restored original data, the value range of x and y is [0, n-1], n is the dimension of the Hadamard matrix, and N is the number of Hadamard matrices.

8. A quantum dot information encryption storage and access device, characterized in that: include: A pre-experimental module is used to perform an exposure experiment on the quantum dot photoresist storage layer through a direct-write lithography system to obtain a relationship curve between exposure parameters and excitation light intensity; An encryption module, used for multiplying and accumulating an original data matrix corresponding to the stored information with a set of random key matrices to obtain encrypted data; A burning module, used for burning the encrypted data obtained by the encryption module on the quantum dot photoresist storage layer through the direct write lithography system according to the relationship curve obtained by the pre-experimental module; A detection module is used to excite the quantum dots of the storage layer after data recording is completed, detect the intensity of the excitation light, and obtain the excitation light intensity vector; The decryption module is used to perform a second-order correlation reconstruction operation on the excitation light intensity vector and the random key matrix to restore the original data.

9. A computing device, characterized in that include: at least one processor; and a memory storing program instructions, wherein the program instructions are configured to be suitable for execution by the at least one processor, and the program instructions include instructions for executing the quantum dot information encryption access method as described in any one of claims 1-7.

10. A readable storage medium storing program instructions, characterized in that: When the program instructions are read and executed by a computing device, the computing device executes the quantum dot information encryption access method as described in any one of claims 1-7.

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