Micro-nano electric field sensor and manufacturing method

Abstract

The invention discloses a micro-nano electric field sensor, which comprises three electrodes including a cathode, an extraction electrode and a collector, the three electrodes are connected with an external control circuit through leads, and an insulating layer is arranged among the cathode, the extraction electrode and the collector and is used for separating the three electrodes so as to ensure the independence of an electric field and the accuracy of a signal. By means of the advanced nanometer manufacturing technology, the problems that in the traditional electric field sensor manufacturing process, cost is high, the period is long, and doping is prone to occurring can be solved, the performance of the electric field sensor can be effectively improved, the reliability and stability of the electric field sensor are improved, and the device meets the increasing technical requirements for miniaturization and integration.

Description

Technical Field

[0001] The present invention relates to the technical field of micro-electromechanical systems, and in particular to a micro-nano electric field sensor and a manufacturing method thereof. Background Art

[0002] In the traditional preparation process of electric field sensors, mechanical processing, photolithography, evaporation and other technologies are usually used to process the sensor's microstructure. Although these methods are mature, they often lead to high preparation costs and long cycles because they require precise operation of larger-sized sensors during the preparation process. In addition, the larger size is also prone to introducing external impurities or internal defects, which may affect the overall performance and long-term stability of the sensor chip, thereby limiting the application of sensors in some high-precision applications.

[0003] The present invention proposes a micro-nano electric field sensor and a manufacturing method, which adopts a more advanced nano-manufacturing technology. Through this technology, the structure can be accurately designed and manufactured at the micron or even nanometer scale, realizing an electric field sensor with higher resolution and smaller size. This miniaturized and high-precision design makes the sensor more suitable for integrated applications, which can greatly shorten the manufacturing cycle and reduce costs.

[0004] Compared with traditional methods, the micro-nano electric field sensor of the present invention not only has advantages in size and integration, but also can better control the purity of materials through nano-manufacturing technology, avoiding common impurities and defects in traditional processing, thereby significantly improving the performance and stability of the sensor. In addition, the innovative design based on the ionized micro-nano structure further improves the sensitivity and response speed of the sensor in the induced electric field, making it more superior in high-precision measurement and application scenarios with high sensitivity requirements.

[0005] In summary, the device and method proposed in the present invention, by virtue of its advanced nano-manufacturing technology and sophisticated design concept, can effectively improve the performance of electric field sensors, enhance their reliability and stability, and adapt to the growing technical requirements of miniaturization and integration. Summary of the invention

[0006] In view of the above problems existing in the prior art, the present invention is proposed.

[0007] Therefore, the problem to be solved by the present invention is that the traditional electric field sensor preparation process has high cost, long cycle and is easy to be doped.

[0008] In order to solve the above technical problems, the present invention provides the following technical solutions: a micro-nano electric field sensor, which includes three electrodes, leads and an insulating layer.

[0009] As a preferred solution of the micro-nano electric field sensor of the present invention, wherein: three electrodes include a cathode, an extraction electrode and a collecting electrode, and the cathode, the extraction electrode and the collecting electrode are connected to an external control circuit through leads;

[0010] The insulating layer is arranged between the cathode, the lead-out electrode and the collecting electrode, and is used to separate the three electrodes to ensure the independence of the electric field and the accuracy of the signal.

[0011] As a preferred solution of the micro-nano electric field sensor of the present invention, wherein: the lead wire is used for voltage control and current output, and is formed by bonding gold wires to the three electrodes using a gold wire bonding machine.

[0012] As a preferred solution of the micro-nano electric field sensor of the present invention, the insulating layer is used to separate the three electrodes in pairs as an inter-electrode insulating layer, and the three electrodes are tightly connected through the insulating layer.

[0013] To solve the above technical problems, the present invention also provides the following technical solutions: a method for manufacturing a micro-nano electric field sensor, which includes processing three electrodes on a silicon wafer; bonding gold wires on the three electrodes using a gold wire bonding machine as voltage control and current output leads of the sensor; sandwiching an insulating layer between the three electrodes, separating the cathode, the lead-out electrode and the collecting electrode in pairs as an inter-electrode insulating layer; and tightly bonding the three electrodes to the insulating layer using an adhesive.

[0014] As a preferred solution of the micro-nano electric field sensor of the present invention, processing three electrodes on a silicon wafer includes cleaning the silicon wafer, photolithography, ICP etching, removing the aluminum mask, and sputtering coating.

[0015] As a preferred solution of the micro-nano electric field sensor described in the present invention, cleaning the silicon wafer includes injecting acetone, alcohol and deionized water solution in an ultrasonic cleaner in sequence, and continuously cleaning each silicon wafer for 10 minutes; thereafter, drying the silicon wafer with dry nitrogen.

[0016] As a preferred solution of the micro-nano electric field sensor described in the present invention, the photolithography includes: using magnetron sputtering to sputter a 200-micron thick aluminum mask on a silicon wafer; then, evenly coating the aluminum mask with photoresist and drying the photoresist in a constant temperature oven at 100 degrees; then, using the mask film to expose the electrode and then immersing it in a developer for 30 seconds for development, removing the photoresist and keeping it in a drying oven at 120 degrees for 10 to 12 seconds; then, using wet etching to remove the aluminum mask in the photolithography pattern within 15 seconds, and then removing the photoresist.

[0017] As a preferred solution of the micro-nano electric field sensor of the present invention, ICP etching includes etching through holes for the cathode and the lead-out electrode and a collecting groove structure for the collecting electrode on a single-crystal circular silicon wafer.

[0018] As a preferred solution of the micro-nano electric field sensor of the present invention, removing the aluminum mask includes removing the remaining aluminum mask on the silicon wafer by wet etching.

[0019] As a preferred solution of the micro-nano electric field sensor of the present invention, the sputtering coating includes coating a titanium-nickel-gold thin film on the inner side of the cathode and the collecting electrode and on both sides of the lead-out electrode.

[0020] The beneficial effects of the present invention are as follows: the present invention can adapt to the growing technical requirements of miniaturization and integration by virtue of its advanced nano-manufacturing technology and sophisticated design concept. The micro-nano electric field sensor not only has advantages in size and integration, but also through nano-manufacturing technology, it can better control the purity of the material and avoid the common impurities and defects in the traditional processing process, thereby significantly improving the performance and stability of the sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. Among them:

[0022] Figure 1 This is the preparation flow chart of micro-nano electric field sensor.

[0023] Figure 2 This is the design drawing of the 1st layer of the current collection circuit board for the micro-nano electric field sensor.

[0024] Figure 3 This is the design diagram of the 2-layer current collection circuit board for the micro-nano electric field sensor.

[0025] Figure 4 This is the design diagram of the 3-layer current collection circuit board for the micro-nano electric field sensor.

[0026] Figure 5 This is the design drawing of the 4-layer current collection circuit board for the micro-nano electric field sensor.

[0027] Figure 6 Schematic diagram of the photolithography process of micro-nano electric field sensors. DETAILED DESCRIPTION

[0028] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings.

[0029] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0030] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor is it a separate or selective embodiment that is mutually exclusive with other embodiments.

[0031] Example 1, reference Figure 1 and Figure 3 , which is the first embodiment of the present invention, provides a micro-nano electric field sensor, which includes three electrodes 100, leads and an insulating layer.

[0032] Specifically, the three electrodes 100 include a cathode 101 , an extraction electrode 102 and a collection electrode 103 .

[0033] The three electrodes 100 are the core part of the micro-nano electric field sensor, and they work together to achieve electric field detection and signal conduction.

[0034] The cathode 101 is responsible for the ionization process. It applies an external electric field to ionize atoms or molecules in the surrounding gas or medium, thereby releasing charged particles. A film is coated on the cathode 101 to enhance the ionization efficiency and corrosion resistance.

[0035] The lead-out electrode 102 is used to guide the charged particles generated from the cathode 101 to the collector 103 and ensure that the particles flow along the correct path; both sides of the lead-out electrode 102 are also coated to improve the electrical conductivity and mechanical strength.

[0036] The collector 103 is used to collect charged particles from the cathode 101 and to export the current signal formed by these particles for processing by an external circuit; the inner side of the collector is also coated to improve its conductivity and corrosion resistance.

[0037] When the sensor is working, the cathode 101 generates charged particles through electroionization, and these particles move along the direction of the extraction electrode 102 and are finally attracted by the collecting electrode 103. After the collecting electrode receives these particles, a current signal is formed.

[0038] The cathode 101, the lead-out electrode 102 and the collector 103 are connected to an external control circuit via leads.

[0039] Specifically, the leads are used for voltage control and current output, and are formed by bonding gold wires to the three electrodes 100 using a gold wire bonding machine.

[0040] The leads are made of gold wire or other highly conductive materials to ensure stable signal transmission and low current loss. The connection of the leads not only ensures the electrical connection between the three electrodes 100 and the control circuit, but also plays a role in signal conduction and current guidance. Through these leads, the sensor can interact with external devices to achieve real-time detection and data collection of electric field changes.

[0041] Specifically, the insulating layer is used to separate the three electrodes 100 in pairs as an inter-electrode insulating layer, and the three electrodes 100 are tightly connected through the insulating layer.

[0042] The insulating layer is disposed between the cathode 101 , the lead-out electrode 102 and the collector 103 , and is used to separate the three electrodes 100 to ensure the independence of the electric field and the accuracy of the signal.

[0043] The main function of the insulating layer is to isolate the cathode 101, the extraction electrode 102 and the collector 103 to avoid electrical interference or short circuit between them. Since each electrode works in a different electric field, only when electrical isolation is maintained can the current and voltage control of each electrode be ensured to be unaffected by other electrodes.

[0044] After the insulating layer isolates the electrodes, it can improve the accuracy of the signal and ensure the independence of the electric field, thereby improving the measurement accuracy and sensitivity of the sensor.

[0045] The insulating layer is made of polyester insulating film or other materials with good electrical insulation properties. Polyester materials have excellent electrical insulation, chemical stability and mechanical strength in micro-nano sensors and are suitable for use in such precise structures.

[0046] When in use, charged particles are emitted from the cathode 101 and guided by the extraction electrode 102, and finally attracted by the collecting electrode 103. The lead wire ensures the electrical connection between the three electrodes 100 and the control circuit, can conduct signals and guide current, so that the sensor can interact with external devices and realize real-time detection and data collection of electric field changes. The insulating layer ensures that the electric field between each electrode is not affected by the adjacent electrodes, so that the path, speed and direction of particle flow can be precisely controlled.

[0047] Example 2, reference Figure 1 to Figure 6 , which is the second embodiment of the present invention, and this embodiment provides a method for manufacturing a micro-nano electric field sensor.

[0048] Specifically, three electrodes 100 are processed on a silicon wafer.

[0049] The three electrodes 100 are the core part of the micro-nano electric field sensor. They work together to achieve electric field detection and signal conduction. When in use, charged particles are emitted from the cathode 101, guided by the extraction electrode 102, and finally attracted by the collection electrode 103.

[0050] Specifically, a gold wire is bonded onto the three electrodes 100 using a gold wire bonding machine to serve as voltage control and current output leads of the sensor.

[0051] The leads ensure stable signal transmission and low current loss. The connection of the leads not only ensures the electrical connection between the three electrodes 100 and the control circuit, but also plays a role in signal conduction and current guidance. Through these leads, the sensor can interact with external devices to achieve real-time detection and data collection of electric field changes.

[0052] Specifically, an insulating layer is sandwiched between the three electrodes 100, and the cathode 101, the lead-out electrode 102 and the collector 103 are separated in pairs to serve as an inter-electrode insulating layer.

[0053] The main function of the insulating layer is to isolate the cathode 101, the lead-out electrode 102 and the collector 103 to avoid electrical interference or short circuit between them. It can ensure that the current and voltage control of each electrode is not affected by other electrodes, and can also improve the accuracy of the signal and ensure the independence of the electric field, thereby improving the measurement accuracy and sensitivity of the sensor.

[0054] Specifically, the three electrodes 100 are tightly bonded to the insulating layer by using an adhesive.

[0055] After the three electrodes 100 are processed, the electrodes and the insulating silicone sheet are bonded by SH-023 epoxy-modified silicone resin or other materials with excellent high temperature resistance, good electrical insulation and chemical corrosion resistance and heated to degrees for 30 minutes to obtain the final cured sensor sample.

[0056] Among them, first clean the electrode and the insulating silicone sheet, and apply SH-023 epoxy modified silicone resin on the contact surface of the electrode and the insulating silicone sheet. When applying, be sure to ensure that the resin layer is uniform and no bubbles are left. You can use brushing or dripping to ensure that the contact surface is completely covered with resin without gaps. Finally, the electrode and the insulating silicone sheet coated with the adhesive resin are precisely docked to ensure accurate positioning and avoid misalignment. Then put the bonded components into an oven or other curing equipment, heat and cure at a temperature of degrees. The curing time is usually 30 minutes to ensure that the resin is fully cured and achieves the required strength and stability. During this process, the curing reaction of the resin material will promote the strength of the bonding layer and ensure that the bonding surface is firm and stable.

[0057] The current acquisition circuit board uses a 4-layer board structure, which can provide greater wiring density, reduce mutual interference between signal lines, and better perform electrical isolation and thermal management, reduce signal interference, and realize more complex circuit design.

[0058] like Figure 2 to Figure 5 The following are the design drawings of the 1st to 4th layer boards. After the boards are made, the sensors are soldered to the current collection circuit board using copper wire.

[0059] The entire micro-nano electric field sensor production is completed according to the above preparation process.

[0060] Example 3, reference Figures 1 to 6 , which is the third embodiment of the present invention, and is based on the first embodiment.

[0061] Specifically, three electrodes 100 are processed on a silicon wafer.

[0062] The three electrodes 100 are the core part of the micro-nano electric field sensor. They work together to achieve electric field detection and signal conduction. When in use, charged particles are emitted from the cathode 101, guided by the extraction electrode 102, and finally attracted by the collection electrode 103.

[0063] Processing the three electrodes 100 on the silicon wafer includes cleaning the silicon wafer, photolithography, ICP etching, removing the aluminum mask, and sputtering coating.

[0064] Cleaning the silicon wafers includes injecting acetone, alcohol and deionized water solution into an ultrasonic cleaner in sequence, and continuously cleaning each silicon wafer for 10 minutes; thereafter, drying the silicon wafers with dry nitrogen.

[0065] The purpose of cleaning silicon wafers is to remove dust, oil and other impurities on the surface of the silicon wafer to provide a clean substrate for subsequent processing steps. Acetone, alcohol and deionized water are commonly used solvents that can dissolve grease and impurities, while nitrogen drying helps remove moisture and prevent water droplets from contaminating the silicon wafer.

[0066] Photolithography includes using magnetron sputtering to sputter a 200-micron thick aluminum mask on a silicon wafer, which can provide an optional protective layer; then, evenly apply photoresist on the aluminum mask and dry the photoresist in a constant temperature oven at 100 degrees to evenly cure the photoresist; then, use the mask film to expose the electrode and then immerse it in a developer for 30 seconds to develop, remove the photoresist and keep it in a drying oven at 120 degrees for 10 to 12 seconds to ensure that only the required structure is left; then, use wet etching to remove the aluminum mask in the photolithography pattern within 15 seconds, and then remove the photoresist to ensure that the pattern is accurately transferred to the silicon wafer surface.

[0067] ICP etching includes etching through holes for the cathode 101 and the lead-out electrode 102 and a collecting slot structure for the collector 103 on a single-crystal circular silicon wafer, while maintaining high precision and avoiding the influence of wet etching on the tiny structure.

[0068] Among them, the aspect ratio of the silicon micron column on the cathode 101 reaches 6:1, so the etching of the cathode 101 needs to take into account both the etching accuracy and the etching aspect ratio. The present invention selects the Bosch process in ICP etching as the manufacturing process of the cathode micron column. The Bosch process is based on deep ion reactive etching technology, which can achieve a high aspect ratio of the etched material while etching and protecting.

[0069] Specifically, the Bosch process includes etching, using free radical isotropic etching, the goal is to remove part of the material on the silicon surface to form a preliminary groove or structure. The action of free radicals can evenly corrode the silicon surface, thereby obtaining a preliminary etching effect; polymer deposition, after the etching is completed, a layer of polymer film is deposited on the silicon surface, especially the sidewalls of the groove, by gas deposition. This film plays a protective role to prevent the sidewalls from being further corroded during subsequent etching. The deposition of the protective film ensures that the subsequent etching is mainly concentrated on the bottom of the silicon; bottom polymer removal, using ion bombardment technology to remove the polymer film at the bottom of the groove. This step is an anisotropic etching process, and the etching only occurs at the bottom and will not affect the protected sidewalls. In this way, the vertical structure of the etching can be maintained and the tilting of the sidewalls can be avoided; silicon etching, after removing the bottom polymer protective film, free radicals are used again to isotropically etch the bottom of the silicon. At this point, the sidewalls have been covered by the protective film, so the main etching work occurs at the bottom, further deepening the depth of the groove; the cycle is repeated, and the above steps are repeated. Through alternating etching and protective film deposition, the groove is gradually deepened, and finally a fine etching with a high aspect ratio is formed.

[0070] Removing the aluminum mask includes removing the remaining aluminum mask on the silicon wafer using wet etching.

[0071] The sputtering coating includes coating a titanium-nickel-gold thin film on the inner sides of the cathode 101 and the collector 103 and on both sides of the lead-out electrode 102 .

[0072] After the topography of the sensor electrode 100 is basically etched, a titanium-nickel-gold film needs to be plated on the inner side of the cathode and the collector and on both sides of the lead-out electrode. The main functions of the film are: enhancing the conductivity of the sensor electrode, thereby increasing the output current of the sensor; utilizing the stable chemical properties of the gold material to enhance the corrosion and oxidation resistance of the sensor electrode; and facilitating the subsequent welding of gold wires on the sensor electrode. Titanium is conducive to bonding the film and the silicon wafer, and nickel can prevent mutual penetration of gold and titanium.

[0073] Specific operation: First, clean the silicon wafer according to the above steps; second, use a vacuum multifunctional magnetron sputtering machine to coat the silicon wafer. When coating, first place the clean silicon wafer neatly on the target plate, with the side to be coated facing up. Then set the coating material and thickness, sedimentation rate and time and other parameters in the computer. Finally, the computer automatically controls the target gun to complete the sputtering coating; finally, rapid annealing is performed to make the composite material film sputtered on the silicon wafer more closely bonded to the silicon wafer.

[0074] Detailed, rapid annealing: First, after cleaning the silicon wafers, place them neatly on the annealing instrument tray without overlapping. Set the temperature change curve of the annealing chamber in the computer. The first stage is to increase the temperature to 440 degrees within 3 minutes; the second stage is to increase the temperature to 450 degrees within 20 seconds. The second stage reduces the heating rate to ease the heating curve and prevent temperature overshoot after stopping heating.

[0075] The third stage is to maintain the temperature of the annealing chamber at 450 degrees for 50 seconds. After waiting for the three stages to end, the annealing chamber is naturally cooled to 70 degrees, then the equipment is opened and the electrode is taken out to complete the annealing. It should be noted during annealing that due to the high temperature of the annealing chamber, the electrode material may react chemically with the gas in the air, so nitrogen needs to be filled into the annealing chamber to protect the electrode material during the entire annealing process.

[0076] Specifically, a gold wire is bonded onto the three electrodes 100 using a gold wire bonding machine to serve as voltage control and current output leads of the sensor.

[0077] The leads ensure stable signal transmission and low current loss. The connection of the leads not only ensures the electrical connection between the three electrodes 100 and the control circuit, but also plays a role in signal conduction and current guidance. Through these leads, the sensor can interact with external devices to achieve real-time detection and data collection of electric field changes.

[0078] Specifically, an insulating layer is sandwiched between the three electrodes 100, and the cathode 101, the lead-out electrode 102 and the collector 103 are separated in pairs to serve as an inter-electrode insulating layer.

[0079] The main function of the insulating layer is to isolate the cathode 101, the lead-out electrode 102 and the collector 103 to avoid electrical interference or short circuit between them. It can ensure that the current and voltage control of each electrode is not affected by other electrodes, and can also improve the accuracy of the signal and ensure the independence of the electric field, thereby improving the measurement accuracy and sensitivity of the sensor.

[0080] Specifically, the three electrodes 100 are tightly bonded to the insulating layer by using an adhesive.

[0081] After the three electrodes 100 are processed, the electrodes and the insulating silicone sheet are bonded by SH-023 epoxy-modified silicone resin or other materials with excellent high temperature resistance, good electrical insulation and chemical corrosion resistance and heated to degrees for 30 minutes to obtain the final cured sensor sample.

[0082] Among them, first clean the electrode and the insulating silicone sheet, and apply SH-023 epoxy modified silicone resin on the contact surface of the electrode and the insulating silicone sheet. When applying, be sure to ensure that the resin layer is uniform and no bubbles are left. You can use brushing or dripping to ensure that the contact surface is completely covered with resin without gaps. Finally, the electrode and the insulating silicone sheet coated with the adhesive resin are precisely docked to ensure accurate positioning and avoid misalignment. Then put the bonded components into an oven or other curing equipment, heat and cure at a temperature of degrees. The curing time is usually 30 minutes to ensure that the resin is fully cured and achieves the required strength and stability. During this process, the curing reaction of the resin material will promote the strength of the bonding layer and ensure that the bonding surface is firm and stable.

[0083] The current acquisition circuit board uses a 4-layer board structure, which can provide greater wiring density, reduce mutual interference between signal lines, and better perform electrical isolation and thermal management, reduce signal interference, and achieve more complex circuit design. After the board is completed, use copper wire to solder the sensor to the current acquisition circuit board.

[0084] The entire micro-nano electric field sensor production is completed according to the above preparation process.

[0085] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. A micro-nano electric field sensor, characterized in that: include, Three electrodes (100), including a cathode (101), an extraction electrode (102) and a collector (103), wherein the cathode (101), the extraction electrode (102) and the collector (103) are connected to an external control circuit via leads; The insulating layer is arranged between the cathode (101), the extraction electrode (102) and the collecting electrode (103) and is used to separate the three electrodes (100) to ensure the independence of the electric field and the accuracy of the signal.

2. The micro-nano electric field sensor according to claim 1, characterized in that: The lead wires are used for voltage control and current output and are formed by bonding gold wires to the three electrodes (100) using a gold wire bonding machine.

3. The micro-nano electric field sensor according to claim 2, characterized in that: The insulating layer is used to separate the three electrodes (100) in pairs as an inter-electrode insulating layer, and the three electrodes (100) are tightly connected via the insulating layer.

4. A method for manufacturing a micro-nano electric field sensor, characterized in that: include Processing three electrodes (100) on a silicon wafer; Using a gold wire bonding machine to bond gold wires onto the three electrodes (100) to serve as voltage control and current output leads of the sensor; An insulating layer is sandwiched between three electrodes (100), and the cathode (101), the lead-out electrode (102) and the collector (103) are separated in pairs to serve as an inter-electrode insulating layer; The three electrodes (100) are tightly bonded to the insulating layer by using an adhesive.

5. The method for manufacturing the micro-nano electric field sensor according to claim 4, characterized in that: Processing three electrodes (100) on a silicon wafer includes cleaning the silicon wafer, photolithography, ICP etching, removing an aluminum mask, and sputtering coating.

6. The method for manufacturing the micro-nano electric field sensor according to claim 5, characterized in that: Cleaning the silicon wafers includes injecting acetone, alcohol and deionized water solution into an ultrasonic cleaner in sequence, and continuously cleaning each silicon wafer for 10 minutes; thereafter, drying the silicon wafers with dry nitrogen.

7. The method for manufacturing a micro-nano electric field sensor according to claim 6, characterized in that: Photolithography includes using magnetron sputtering to sputter a 200-micron-thick aluminum mask on a silicon wafer; then, evenly coating the aluminum mask with photoresist and drying the photoresist in a constant temperature oven at 100 degrees; then, using a mask film to expose the electrode and then immersing it in a developer for 30 seconds, removing the photoresist and keeping it in a drying oven at 120 degrees for 10 to 12 seconds; then, using wet etching to remove the aluminum mask in the photolithography pattern within 15 seconds, and then removing the photoresist.

8. The method for manufacturing the micro-nano electric field sensor according to claim 7, characterized in that: The ICP etching includes etching a through hole of a cathode (101) and an extraction electrode (102) and a collecting groove structure of a collecting electrode (103) on a single crystal circular silicon wafer.

9. The method for manufacturing a micro-nano electric field sensor according to claim 8, characterized in that: Removing the aluminum mask includes removing the remaining aluminum mask on the silicon wafer using wet etching.

10. The method for manufacturing a micro-nano electric field sensor according to claim 9, characterized in that: The sputtering coating includes coating a titanium-nickel-gold thin film on the inner sides of the cathode (101) and the collecting electrode (103) and on both sides of the lead-out electrode (102).

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