Laminated structure and method for manufacturing laminated structure

Abstract

A laminated structure is provided with: a substrate having a first surface and a second surface provided so as to be connected to the first surface; a first insulating film provided on the first surface and the second surface; and a second insulating film provided on the first insulating film and at a corner formed at a boundary between the first surface and the second surface, a difference between a thermal expansion coefficient of the base material and a thermal expansion coefficient of the second insulating film being smaller than a difference between a thermal expansion coefficient of the base material and a thermal expansion coefficient of the first insulating film. A method for manufacturing a laminated structure includes: a step for using a substrate having a first surface and a second surface provided so as to be connected to the first surface; a step of forming a first insulating film on the first surface and the second surface; and a step of forming a second insulating film by melting a powder of an organic material and spraying the powder on the first insulating films and the gaps between the first insulating films.

Description

Technical Field

[0001] Embodiments of the present invention relate to a stacked structure (laminated structure) and a method for producing the stacked structure, for example, a stacked structure for a mounting substrate and a method for producing the stacked structure. Background Art

[0002] Semiconductor devices are mounted on almost all electronic devices and play an important role in the functions of electronic devices. Semiconductor devices are devices that utilize the semiconductor properties of silicon and the like. Semiconductor devices are formed by stacking semiconductor films, insulating films, and conductive films on a substrate and patterning these films. These films are stacked using evaporation, sputtering, chemical vapor deposition (CVD), or chemical reactions of the substrate, and patterning these films by photolithography. The photolithography process includes: forming a resist on these films for patterning, exposing the resist, forming a resist mask based on development, partially removing these films based on etching, and removing the resist mask.

[0003] The characteristics of the above-mentioned film depend to a large extent on the conditions for film formation or the conditions for etching the film. One of the conditions is the voltage applied to the stage for mounting the substrate (hereinafter referred to as the stage). In recent years, with the miniaturization of semiconductor devices, the ratio of the diameter of the processed hole to the thickness of the film to be processed (aspect ratio) has become larger. Therefore, for example, the voltage applied to the stage included in the etching equipment tends to increase. In addition, as the voltage applied to the stage increases, the withstand voltage of the components included in the stage is required to be improved. As components included in the stage, cooling plates, electrostatic chucks, etc. can be listed. Patent Documents 1 and 2 disclose a stage for forming an insulating film on the surface of a substrate by ceramic thermal spraying, which is one of the thermal spraying methods, to improve the withstand voltage of the insulating film. In addition, as another method for forming an insulating film on the surface of the stage, an anodizing method is known.

[0004] (Prior art literature)

[0005] (Patent Document)

[0006] Patent Document 1: Japanese Patent No. 6027407

[0007] Patent Document 2: Japanese Registered Utility Model No. 2600558 Summary of the invention

[0008] (Problems to be solved by the invention)

[0009] According to the conventional method, it is difficult to form an insulating film at the boundary between one surface and another surface (hereinafter, also referred to as a corner or a corner portion), and there is a problem of a gap or a void being generated at the corner. In addition, there is a problem of a gap being generated when the insulating film is heated. When a gap or a void is generated, the withstand voltage (also referred to as a breakdown voltage) of the insulating film is reduced.

[0010] Therefore, one of the objects of the present invention is to provide a multilayer structure having excellent insulation performance and reliability.

[0011] (Measures taken to solve the problem)

[0012] A stacked structure provided by one embodiment of the present invention includes: a substrate having a first surface and a second surface connected to the first surface; a first insulating film, which is arranged on the first surface and the second surface; and a second insulating film, which is arranged on the first insulating film and formed at a corner of the boundary between the first surface and the second surface, and the difference between the thermal expansion coefficient of the substrate and the thermal expansion coefficient of the second insulating film is smaller than the difference between the thermal expansion coefficient of the substrate and the thermal expansion coefficient of the first insulating film.

[0013] In the above-described stacked structure, the thickness of the second insulating film may be greater than the thickness of the first insulating film at a corner portion formed at a boundary between the first surface and the second surface.

[0014] A stacked structure provided by one embodiment of the present invention includes: a substrate having a first surface; a first insulating film, which is arranged in a first region in the first surface of the substrate; and a second insulating film, which is arranged on the first insulating film in the first region in the first surface of the substrate and on a second region adjacent to the first region, and the difference between the thermal expansion coefficient of the substrate and the thermal expansion coefficient of the second insulating film is smaller than the difference between the thermal expansion coefficient of the substrate and the thermal expansion coefficient of the first insulating film.

[0015] In the above-mentioned stacked structure, in the second region, a gap may be present between the base material and the second insulating film.

[0016] In the above-mentioned stacked structure, the substrate may be a metal, and the first insulating film may be a metal oxide.

[0017] In the above-mentioned stacked structure, the thickness of the second insulating film on the first surface may be greater than the thickness of the second surface.

[0018] In the above-mentioned stacked structure, the substrate may be aluminum, and the first insulating film may be aluminum oxide.

[0019] In the above-mentioned stacked structure, the second insulating film may contain an organic material.

[0020] In the above-mentioned stacked structure, the second insulating film may contain polybenzimidazole.

[0021] A method for manufacturing a stacked structure provided in one embodiment of the present invention includes: a step of using a substrate having a first surface and a second surface connected to the first surface; a step of forming a first insulating film on the first surface and the second surface; and a step of forming a second insulating film by spraying a melted organic material onto the first insulating film and in the gap between the first insulating films.

[0022] In the method for manufacturing the stacked structure, the substrate may be made of metal, and the first insulating film may be formed by anodizing.

[0023] In the above-mentioned method for manufacturing a stacked structure, the first insulating film may be formed by a thermal spraying process.

[0024] In the above-mentioned method for manufacturing a stacked structure, the first insulating film may be a metal oxide film.

[0025] In the method for manufacturing the stacked structure, at a corner formed by the first surface and the second surface, a thickness of the second insulating film may be greater than a thickness of the first insulating film.

[0026] In the above-mentioned method for manufacturing a stacked structure, the second insulating film may contain a resin material.

[0027] In the above-mentioned method for manufacturing a stacked structure, the second insulating film may contain polybenzimidazole.

[0028] The method for manufacturing the stacked structure may further include a step of heating the first insulating film after the first insulating film is formed along the first surface and the second surface.

[0029] (Effects of the Invention)

[0030] According to one embodiment of the present invention, a multilayer structure having excellent insulation performance and reliability can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1A It is a schematic perspective view of a stacked structure according to one embodiment of the present invention.

[0032] Figure 1B This is a schematic plan view of a multilayer structure according to one embodiment of the present invention.

[0033] Figure 2A This is an enlarged cross-sectional view of a portion of a stacked structure according to one embodiment of the present invention.

[0034] Figure 2B This is an enlarged cross-sectional view of a portion of a stacked structure according to one embodiment of the present invention.

[0035] Figure 3 It is a flowchart showing a method for producing a multilayer structure according to one embodiment of the present invention.

[0036] Figure 4A It is a schematic cross-sectional view showing a method for producing a multilayer structure according to one embodiment of the present invention.

[0037] Figure 4B It is a schematic cross-sectional view showing a method for producing a multilayer structure according to one embodiment of the present invention.

[0038] Figure 5A It is a schematic cross-sectional view showing a method for producing a multilayer structure according to one embodiment of the present invention.

[0039] Figure 5B It is a schematic cross-sectional view showing a method for producing a multilayer structure according to one embodiment of the present invention.

[0040] Figure 6 It is a schematic cross-sectional view of a film processing apparatus including a multilayer structure according to one embodiment of the present invention.

[0041] Fig. 7A It is a schematic diagram showing observation points of a cross-sectional SEM of the multilayer structure according to the present example.

[0042] Figure 7B The cross-sectional SEM observation results of the laminated structure according to this example.

[0043] Figure 7C The cross-sectional SEM observation results of the laminated structure according to this example.

[0044] Fig.7D The cross-sectional SEM observation results of the laminated structure according to this example.

[0045] Figure 8 This is the hydrochloric acid bubble test result involved in this embodiment.

[0046] Fig. 9 This is the measurement result of the breakdown voltage point measurement involved in this embodiment.

[0047] Fig.10 This is the measurement result of the overall breakdown voltage measurement involved in this embodiment. DETAILED DESCRIPTION

[0048] Hereinafter, various embodiments of the invention disclosed in the present application will be described with reference to the drawings. However, the present invention can be implemented in various forms without departing from the gist thereof, and should not be construed as being limited to the description of the embodiments illustrated below.

[0049] In addition, in the drawings referred to in the present embodiment, the same reference numerals or similar reference numerals (reference numerals with a - (hyphen) or a number added after the reference numerals) are given to the same parts or parts having the same functions, and their repeated descriptions are sometimes omitted. In addition, for the sake of convenience of description, the dimensional ratios in the drawings may be different from the actual ratios, or a part of the structure may be omitted from the drawings.

[0050] <First Embodiment>

[0051] The structure of the stacked structure 10 and the method for producing the stacked structure 10 according to the present embodiment will be described.

[0052] [1-1. Structure of Laminated Structure 10]

[0053] FIG. 1 is a schematic perspective view and a plan view of a laminated structure 10 according to an embodiment of the present invention. Specifically, Figure 1A 1 is a schematic perspective view of the stacked structure 10 . Figure 1B is a schematic plan view of the stacked structure 10 .

[0054] The laminated structure 10 has a disc-like shape. The laminated structure 10 has an upper surface capable of mounting a substrate (e.g., a silicon wafer) and can be used as a stage. The laminated structure 10 has a diameter capable of mounting, for example, a 12-inch silicon wafer. The laminated structure 10 is provided with a hole 20 for a lift pin for lifting the substrate and a groove 30 for the flow of gas used in manufacturing a semiconductor device. The arrangement, number, and shape of the hole 20 and the groove 30 can be appropriately changed according to the specifications of the manufacturing equipment of the semiconductor device.

[0055] Figure 2A It is along Figure 1B The schematic cross-sectional view of the groove portion 30 in the stacked structure 10 taken along the line AA′ is shown. Figure 2B It is magnified Figure 2A. The multilayer structure 10 has a substrate 100, a first insulating film 110 and a second insulating film 120. The first insulating film 110 is arranged to cover the upper surface 100u (also referred to as the first surface), the side surface 100s and the bottom surface 100d of the substrate 100. In addition, in the present embodiment, a chamfered portion 100b (also referred to as the second surface) is provided between the upper surface 100u and the side surface 100s of the substrate 100. The chamfered portion 100b is provided in connection with the upper surface 100u and in connection with the side surface 100s. In this example, the chamfered portion 100b is a C-chamfer. The size of the chamfered portion 100b is, for example, greater than 0.1 mm and less than 10 mm. The chamfered portion 100b is similarly provided at the ends of the hole 20 and the substrate 100.

[0056] For example, metal can be used as a material of the substrate 100. In the present embodiment, aluminum (Al) is used as the substrate 100.

[0057] A material that can satisfy the desired withstand voltage characteristics is used in the first insulating film 110. An inorganic insulating material such as a metal oxide is used in the first insulating film 110. In this example, aluminum oxide (Al2O3) is used as a metal oxide in the first insulating film 110 in combination with the metal (aluminum) used in the substrate 100.

[0058] From the viewpoint of withstand voltage characteristics, the thickness Tu of the first insulating film 110 on the upper surface 100 u is preferably greater than or equal to 5 μm and less than or equal to 100 μm.

[0059] The second insulating film 120 is provided on the first insulating film 110 and at the corners 100c formed on the boundaries of the adjacent surfaces of the substrate 100. The difference between the thermal expansion coefficient of the substrate 100 and the thermal expansion coefficient of the second insulating film 120 is smaller than the difference between the thermal expansion coefficient of the substrate 100 and the thermal expansion coefficient of the first insulating film 110. Therefore, a material having a thermal expansion coefficient close to that of the substrate 100 and high corrosion resistance and heat resistance is used in the second insulating film 120. In this example, a resin material is used in the second insulating film 120. More specifically, the second insulating film 120 contains polybenzimidazole (PBI). Polybenzimidazole has the characteristics of excellent corrosion resistance and heat resistance and a thermal expansion coefficient close to that of aluminum.

[0060] From the viewpoint of withstand voltage characteristics, the thickness Tu2 of the second insulating film on the upper surface 100 u is preferably 5 μm or more and 100 μm or less, and more preferably 10 μm or more and 50 μm or less.

[0061] In the stacked structure 10 of the present embodiment, at the boundary region 101 (corner 100c) formed between the upper surface 100u (first surface) and the chamfered portion 100b (second surface), the thickness Tc2 of the second insulating film 120 is greater than the thickness T1 of the first insulating film 110. At this time, the thickness Tc2 of the second insulating film 120 at the corner 100c-1 has a thickness equal to or greater than the thickness T1 of the first insulating film 110 at the upper surface 110u. The thickness of the second insulating film 120 is also greater than the thickness of the first insulating film 110 at the corner 100c (corner 100c-2) between the chamfered portion 100b and the side surface 100s and at the corner 100c (corner 100c-3) between the side surface 100s and the bottom surface 100d.

[0062] In addition, in this embodiment, except for the corner portion 100c, the second insulating film 120 is provided on the upper surface 100u of the substrate 100, on the region (second region 100ur2) where the crack 115 (gap) is generated on the first insulating film 110, and on the region (first region 100ur1) where the crack 115 (gap) does not exist. The first insulating film 110 and the second insulating film 120 are stacked on the first region 100ur1. In the second region 100ur2, a gap (space) may be provided between the substrate 100 and the second insulating film 120, or the second insulating film 120 may be filled in whole or in part in the crack 115. The second insulating film 120 has the same thickness in the first region 100ur1 and the second region 100ru2. In addition, the crack 115 is provided between the first insulating film 110. Therefore, it can also be said that the second region 100ur2 is adjacent to the first region 100ur1.

[0063] As described above, polybenzimidazole has the characteristics of excellent corrosion resistance and heat resistance and a thermal expansion coefficient close to the thermal expansion coefficient of aluminum. As a result, when the laminated structure is repeatedly subjected to high-temperature heat treatment, the second insulating film can follow the thermal expansion of the substrate and the first insulating film. Therefore, even if cracks 115 are generated on the first insulating film 110, the presence of the second insulating film can suppress the exposure of the substrate 100. In addition, in the case of the present embodiment, the entire surface of the substrate 100 is covered by the first insulating film 110 or the second insulating film 120 with a thickness greater than the specified thickness. Therefore, the withstand voltage of the laminated structure 10 is improved. Therefore, the laminated structure 10 involved in the present embodiment can be said to have excellent insulation performance and reliability.

[0064] In addition, in the present embodiment, the thickness Ts2 of the second insulating film 120 on the side surface 100 s may be smaller than the thickness Tu2 of the second insulating film 120 on the upper surface 100 u .

[0065] [1-2. Method for manufacturing laminated structure 10]

[0066] Next, refer to Figure 3 5 , a method for manufacturing the multilayer structure 10 according to the present embodiment will be described.

[0067] Figure 3 4 and 5 are schematic cross-sectional views showing the method for producing the multilayer structure 10 according to the present embodiment.

[0068] First, if Figure 3 and Figure 4A As shown, a first insulating film 110 is formed on a prepared substrate 100 (step S110). In this example, an aluminum substrate is used as the substrate 100. The aluminum substrate is anodized to form aluminum oxide as the first insulating film 110. At this time, from the viewpoint of improving the withstand voltage, the thickness of the aluminum oxide is 5 μm or more and 100 μm or less, preferably 10 μm or more and 50 μm or less. In the case of anodization, a thicker first insulating film can be formed at a low cost compared with other treatment methods.

[0069] Then, if Figure 3 and Figure 4B As shown, the substrate 100 and the first insulating film 110 are heat treated (step S120). From the viewpoint of generating cracks in the first insulating film 110, the heat treatment is preferably performed at a temperature of 100°C or higher and 500°C or lower. By performing the heat treatment within the above temperature range, cracks 115 can be generated, so that gaps can be generated in the first insulating film 110 in advance.

[0070] Then, if Figure 3 and Figure 5A As shown, a second insulating film is formed on the first insulating film 110 and on the cracks 115 of the first insulating film 110 (step S130). Specifically, a resin material 501 (specifically, polybenzimidazole) molten at a high temperature is sprayed from a spray device 500 on the surface of the first insulating film 110 and the cracks 115 (gap) of the first insulating film 110 (high-temperature spraying treatment), thereby forming the second insulating film 120. In the high-temperature spraying treatment in this case, polybenzimidazole heated to above 400°C is sprayed in consideration of the glass transition point. At this time, from the viewpoint of voltage resistance, the thickness of the polybenzimidazole is greater than 5μm and less than 100μm, preferably greater than 10μm and less than 50μm. In the case of the high-temperature spraying treatment, the molten resin material hardens to form a film, thereby being able to form a dense insulating film.

[0071] The high-temperature spraying treatment is started on the upper surface 100u side of the substrate 100. Therefore, the second insulating film 120 can be formed almost uniformly on the upper surface 100u of the substrate 100 and the chamfered portion 100b of the substrate 100. In addition, compared with the upper surface 100u of the substrate 100, it is difficult to form the second insulating film 120 on the side surface 100s of the substrate 100. Therefore, there is a case where the thickness of the second insulating film 120 on the side surface 100s becomes smaller than the thickness of the second insulating film 120 on the upper surface 100u. However, in the case of the present embodiment, a thicker first insulating film 110 can be formed by anodizing treatment, so the first insulating film 110 of a specified thickness can be stably formed on the side surface 100s of the substrate 100. As a result, Figure 5B As shown, a laminated structure 10 is manufactured.

[0072] The manufacturing method of the multilayer structure 10 involved in this embodiment can form a first insulating film having a thick film at low cost by using anodization, and at the same time, form a dense second insulating film having a thermal expansion coefficient close to that of the substrate in the gap of the first insulating film by high-temperature spraying. As a result, the entire surface of the substrate 100 is covered with the first insulating film 110 or the second insulating film 120 having a thickness greater than or equal to a predetermined thickness. Therefore, even if the heat treatment is repeated, the defects of the insulating film in the multilayer structure 10 can be eliminated and the withstand voltage can be improved. Therefore, by using this embodiment, a multilayer structure 10 having excellent insulation performance and reliability can be manufactured.

[0073] In the present embodiment, the chamfered portion 100 b provided on the substrate 100 is mainly described, but the second insulating film 120 is similarly formed on the chamfered portion of the hole 20 for the lift pin and the end portion of the substrate.

[0074] In the case of this embodiment, alumina may be formed thicker and polybenzimidazole may be formed thinner than alumina. Therefore, the manufacturing cost of the laminated structure can be reduced.

[0075] <Second Embodiment>

[0076] Reference Figure 6 , the structure of a film processing device 50 according to one embodiment of the present invention will be described. The film processing device 50 includes a stacked structure 10. Therefore, the description of the structure of the stacked structure 10 of the first embodiment may be omitted below.

[0077] Figure 6 2 is a schematic cross-sectional view of a film processing apparatus 50 according to one embodiment of the present invention. The film processing apparatus 50 is a so-called etching apparatus, but the film processing apparatus 50 is not limited thereto.

[0078] The film processing apparatus 50 can perform dry etching on various films. The film processing apparatus 50 includes a chamber 52. The chamber 52 provides a space for etching a film such as a conductor, an insulator, or a semiconductor formed on a substrate.

[0079] The chamber 52 is connected to an exhaust device 54, thereby being able to set the interior of the chamber 52 to a reduced pressure environment. The chamber 52 is also provided with an inlet pipe 56 for introducing a reaction gas, and the reaction gas for etching is introduced into the chamber via a valve 58. As the reaction gas, fluorinated organic compounds such as carbon tetrafluoride (CF4), octafluorocyclobutane (c-C4F8), perfluorocyclopentane (c-C5F10) or hexafluorobutadiene (C4F6) can be cited.

[0080] A microwave source 62 may be provided at the upper portion of the chamber 52 via a waveguide 60. The microwave source 62 has an antenna for supplying radio waves, etc., and outputs high-frequency microwaves such as 2.45 GHz microwaves or 13.56 MHz radio frequency (RF) waves. The microwaves generated by the microwave source 62 are propagated to the upper portion of the chamber 52 via the waveguide 60, and are introduced into the interior of the chamber 52 via a window 64 made of quartz, ceramic, etc. The reaction gas is converted into plasma under the action of the microwaves, and the film is etched by the electrons, ions, and radicals contained in the plasma.

[0081] A stacked structure 10 for mounting a substrate is provided at the lower part of the chamber 52. A power source 74 is connected to the stacked structure 10, and a voltage equivalent to high-frequency power is applied to the stacked structure 10, and an electric field generated by microwaves is formed in a direction perpendicular to the surface of the stacked structure 10 and the surface of the substrate. Magnets 66, 68, and 70 may also be provided at the upper part or the side of the chamber 52. Magnets 66, 68, and 70 may be permanent magnets or electromagnets with electromagnetic coils. Magnetic field components parallel to the stacked structure 10 and the surface of the substrate are generated by the magnets 66, 68, and 70, and due to the cooperation with the electric field generated by the microwaves, the electrons in the plasma are resonated by the Lorentz force and are bound to the stacked structure 10 and the surface of the substrate. As a result, high-density plasma can be generated on the substrate surface.

[0082] For example, when the stacked structure 10 is provided with a sheath heater, a heater power source for controlling the sheath heater is connected. The stacked structure 10 may also be connected, as an arbitrary structure, to a power source 76 for an electrostatic chuck for fixing a substrate to the stacked structure 10, a temperature controller 78 for controlling the temperature of a medium circulating inside the stacked structure 10, and a rotation control device (not shown) for rotating the stacked structure 10.

[0083] The film processing device 50 involved in this embodiment includes a stacked structure 10. By using the stacked structure 10, the substrate can be heated uniformly and the heating temperature can be accurately controlled. In addition, by using the stacked structure 10 with excellent insulation performance, the withstand voltage of the voltage applied to the substrate is improved. Therefore, by using the film processing device 50, a contact with a high aspect ratio or a film with a high aspect ratio can be formed. Therefore, the film processing device 50 can uniformly etch various films provided on the substrate. In addition, by using the stacked structure 10 with excellent reliability, the number of maintenance times of the film processing device 50 can be reduced.

[0084] [Example]

[0085] In this example, a multilayer structure according to one embodiment of the present invention was produced, and the results of various evaluations are described.

[0086] <1. Treatment conditions of each sample>

[0087] [1-1. Treatment conditions of Example 1]

[0088] In this example, the processing conditions of the sample in Example 1 are as follows.

[0089] Base material: A6061 (aluminum)

[0090] Substrate size: Φ118mm×thickness 8mm

[0091] First insulating film (aluminum oxide): 30 μm thick formed by anodizing

[0092] Second insulating film: 15μm film formed by high-temperature spraying of polybenzimidazole

[0093] [1-2. Treatment conditions of Comparative Example 1]

[0094] In this example, the processing conditions of the sample in Example 1 are as follows.

[0095] Base material: A6061 (aluminum)

[0096] Substrate size: Φ118mm×thickness 8mm

[0097] First insulating film (aluminum oxide): 30 μm thick formed by anodizing

[0098] [1-3. Treatment conditions of Comparative Example 2]

[0099] In this example, the processing conditions of the sample in Example 1 are as follows.

[0100] Base material: A6061 (aluminum)

[0101] Substrate size: Φ118mm×thickness 8mm

[0102] Second insulating film: 15μm film formed by high-temperature spraying of polybenzimidazole

[0103] [1-4. Temperature Rising Cycle Treatment]

[0104] In this example, a temperature increase cycle treatment of increasing the temperature from room temperature to 375° C., maintaining the temperature for 30 minutes, and then returning the temperature to room temperature was performed 30 times for each evaluation sample.

[0105] <2. Evaluation Results>

[0106] [2-1. Cross-sectional SEM observation and evaluation]

[0107] In this example, after the above-mentioned temperature rise cycle treatment, the sample of Example 1 was subjected to cross-sectional SEM observation and evaluation.

[0108] Figure 7 is a cross-sectional SEM observation evaluation. More specifically, Fig. 7A It is a schematic diagram showing observation points of a cross-sectional SEM. Figure 7B This is the cross-sectional SEM observation result of observation point 1. Figure 7C This is the cross-sectional SEM observation result of observation point 2. Fig.7D is the cross-sectional SEM observation result of observation point 3. Figure 7B , Figure 7C as well as Fig.7D As shown, in Example 1, the first insulating film (aluminum oxide) is uniformly formed on the upper surface, chamfered portion, side surface and bottom surface. In addition, the second insulating film is formed at the boundary (corner) between the upper surface and the chamfered portion and at the boundary (corner) between the side surface and the chamfered portion in a manner covering the gap of aluminum oxide. In other words, the entire surface of the substrate can be covered by the first insulating film or the second insulating film.

[0109] [2-2. Hydrochloric acid bubble test]

[0110] In this embodiment, after the evaluation samples of Example 1 and Comparative Example 2 were subjected to the above-mentioned temperature rise cycle treatment, these evaluation samples were immersed in a 5 wt % hydrochloric acid solution at a temperature of 25±5°C for a specified time, and whether bubbles were generated due to corrosion was evaluated.

[0111] Figure 8 is the test result of the hydrochloric acid bubble test. Figure 8 As shown, even after being immersed in the hydrochloric acid solution for 4 hours or more, no bubbles were observed in the evaluation samples of Example 1 and Comparative Example 2. That is, it can be seen that the base material (aluminum) of the evaluation samples was not exposed and was protected by the second insulating film (PBI).

[0112] [2-3. Breakdown voltage test]

[0113] In this embodiment, after the evaluation sample was subjected to the above-mentioned temperature rise cycle treatment, the insulation film was subjected to a breakdown voltage test. In the breakdown voltage test, point measurement of measuring a predetermined point of the test sample and overall measurement of measuring the entire test sample were performed.

[0114] Fig. 9 It is the measurement result of breakdown voltage point measurement. Fig.10 is the measurement result of the overall measurement of the breakdown voltage. Fig. 9 and Fig.10 As shown, both the breakdown voltage point measurement and the overall measurement confirmed the improvement of the breakdown voltage in Example 1 compared with Comparative Examples 1 and 2. In addition, in the embodiment, the breakdown voltage of Example 1 is higher than the result of Comparative Example 3 obtained by adding the results of Comparative Examples 1 and 2. That is, the first insulating film (aluminum oxide) and the second insulating film (PBI) are combined to form, thereby synergistically improving the breakdown voltage compared with the case where each insulating film is used alone. Therefore, by using one embodiment of the present invention, a laminated structure with excellent insulation performance and reliability can be provided.

[0115] [Modifications]

[0116] As an embodiment of the present invention, the above-mentioned embodiments can be appropriately combined and implemented without mutual contradiction. In addition, as long as it does not depart from the gist of the present invention, the scheme of appropriately adding, deleting, or designing and changing the constituent elements based on each embodiment by those skilled in the art is also included in the scope of the present invention.

[0117] Even if other effects are different from the effects obtained by the above-mentioned embodiments, as long as they are clear from the description of this specification or can be easily predicted by those skilled in the art, they can be understood as effects that can be obtained by the present invention.

[0118] In the first embodiment of the present invention, an example of using polybenzimidazole resin as the second insulating film 120 is shown, but the present invention is not limited thereto. For example, as the insulating film, polyimide resin, polyetherimide resin, polyamideimideresin, polytetrafluoroethylene resin, polyetheretherketone resin, or polyphenylene sulfide resin can be used.

[0119] In the first embodiment of the present invention, an example is shown in which a metal (particularly aluminum) is used as the material of the substrate 100, but the present invention is not limited thereto. As the substrate 100, in addition to aluminum, a metal such as titanium (Ti) or stainless steel can also be used. In addition, in addition to metals, ceramics can also be used.

[0120] In the first embodiment of the present invention, an example of using aluminum oxide in the first insulating film 110 is shown, but the present invention is not limited thereto. In the first insulating film 110, in addition to aluminum oxide, an oxide containing at least one element selected from alkaline earth metals, rare earth metals, aluminum (Al), tantalum (Ta), titanium (Ti), chromium (Cr), zirconium (Zr), yttrium (Y) and silicon (Si), or a composite oxide thereof, etc. may be used.

[0121] In the first embodiment of the present invention, an example is shown in which the first insulating film 110 is formed by anodizing the substrate 100, but the present invention is not limited thereto. For example, the first insulating film 110 may be formed by thermal spraying the substrate 100. In the case of thermal spraying, different elements may be used in the substrate 100 and the first insulating film 110 (for example, the substrate is glass and the first insulating film is aluminum oxide).

[0122] In the first embodiment of the present invention, an example of forming the second insulating film 120 by performing a high temperature spraying process of an organic material (resin material, more specifically, polybenzimidazole) is shown, but the present invention is not limited thereto. For example, the second insulating film 120 may be formed by immersing the substrate in a solution containing an organic resin. In this case, a heating process may be performed after the second insulating film 120 is formed.

[0123] In addition, in the first embodiment of the present invention, the groove portion 30 is mainly described, but the hole 20 and the substrate may have the same structure. In addition, the same structure may be provided not only on the upper surface of the substrate but also on the lower surface of the substrate.

[0124] In the first embodiment of the present invention, an example in which heat treatment is performed after the first insulating film is formed is shown, but the present invention is not limited thereto. Depending on the material of the first insulating film, heat treatment may not be performed.

[0125] In the first embodiment of the present invention, an example of using the stacked structure 10 on a stage is shown, but the present invention is not limited to this. For example, the stacked structure 10 can be used as a heater or a cooling plate in a stage of a semiconductor manufacturing device. Alternatively, the stacked structure 10 can be used as a showerhead in an upper electrode of a semiconductor manufacturing device. The stacked structure can be used in a heating environment or in a cooling environment using liquid nitrogen or the like.

[0126] (Explanation of Reference Numerals)

[0127] 10 ... laminated structure, 20 ... hole, 30 ... groove portion, 35 ... heater power supply, 50 ... film processing device, 52 ... chamber, 54 ... exhaust device, 56 ... air inlet pipe, 58 ... valve, 60 ... waveguide, 62 ... microwave source, 64 ... window, 66 ... magnet, 68 ... magnet, 70 ... magnet, 74 ... power supply, 76 ... power supply, 78 ... temperature controller, 100 ... substrate, 100b ... chamfered portion, 100c ... corner portion, 100d ... bottom surface, 100e ... end portion, 100s ... side surface, 103 ... lower surface, 110 ... first insulating film, 115 ... crack, 120 ... second insulating film, 500 ... spraying device, 501 ... resin material

Claims

1. A laminated structure, characterized in that: include: A substrate having a first surface and a second surface connected to the first surface; a first insulating film disposed on the first surface and the second surface; as well as a second insulating film provided on the first insulating film and formed at a corner portion of a boundary between the first face and the second face, A difference between a thermal expansion coefficient of the base material and a thermal expansion coefficient of the second insulating film is smaller than a difference between a thermal expansion coefficient of the base material and a thermal expansion coefficient of the first insulating film.

2. The laminated structure according to claim 1, wherein The thickness of the second insulating film is greater than the thickness of the first insulating film at a corner portion formed at a boundary between the first face and the second face.

3. A laminated structure, characterized in that: include: a substrate having a first side; A first insulating film disposed on a first region of the first surface of the substrate; as well as a second insulating film provided on the first insulating film in the first region of the first surface of the substrate and provided on a second region provided adjacent to the first region, A difference between a thermal expansion coefficient of the base material and a thermal expansion coefficient of the second insulating film is smaller than a difference between a thermal expansion coefficient of the base material and a thermal expansion coefficient of the first insulating film.

4. The laminated structure according to claim 3, wherein: In the second region, there is a gap between the base material and the second insulating film.

5. The laminated structure according to claim 1, wherein The substrate is a metal, The first insulating film is a metal oxide.

6. The laminated structure according to claim 1, wherein The substrate is aluminum, The first insulating film is aluminum oxide.

7. The laminated structure according to claim 1, wherein: The second insulating film contains an organic material.

8. The laminated structure according to claim 1, wherein The second insulating film contains polybenzimidazole.

9. A method for manufacturing a laminated structure, characterized in that: include: A step of using a substrate having a first surface and a second surface disposed in connection with the first surface; forming a first insulating film on the first surface and the second surface; as well as A step of forming a second insulating film by melting an organic material and spraying the melted organic material onto the first insulating film and the gaps between the first insulating films.

10. The method for producing a laminated structure according to claim 9, wherein: The substrate is a metal, The first insulating film is formed by anodizing.

11. The method for producing a laminated structure according to claim 9, wherein: The first insulating film is formed by a thermal spraying process.

12. The method for producing a laminated structure according to claim 10, wherein: The first insulating film is a metal oxide.

13. The method for producing a laminated structure according to claim 9, wherein: At a corner formed by the first surface and the second surface, a thickness of the second insulating film is greater than a thickness of the first insulating film.

14. The method for producing a laminated structure according to claim 13, wherein: The second insulating film contains a resin material.

15. The method for producing a laminated structure according to claim 13, wherein: The second insulating film is polybenzimidazole.

16. The method for producing a laminated structure according to any one of claims 9 to 14, wherein: The manufacturing method further includes the step of heating the first insulating film after forming the first insulating film along the first face and the second face.

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