Apparatus and method for separate write enable for single pass access of data, metadata, and parity information
By introducing a multi-column planar structure and corresponding write enable signals and column selection signals into semiconductor memory, the problem of difficulty in efficient single-pass access in the memory in the prior art is solved, efficient access to data, metadata and error correction information is achieved, and the performance and efficiency of the memory are improved.
Patent Information
- Application Number
- CN202380064291.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-11-15
- Filing Date
- 2023-10-10
- Publication Date
- 2025-04-18
AI Technical Summary
When existing semiconductor memory stores error correction information and metadata associated with data, it is difficult to efficiently perform single pass access, resulting in increased performance losses and delays.
By introducing a multi-column planar structure in memory, including a data column plane, a metadata column plane and an error correction code column plane, and using write enable signals and column selection signals, efficient single pass access to data, metadata and error correction information is achieved.
It realizes simultaneous storage and accessing data, metadata and error correction information in a single access pass, reducing the access delay and power consumption of the memory, and improving the performance and efficiency of the memory.