Combined film parameter measurement device, measurement device and regulation and control method

Abstract

The invention discloses a combined thin film parameter measurement device, a measurement device and a regulation and control method. The combined thin film parameter measuring device comprises a substrate; the preset doped component content of the combined film is continuously changed from the first end to the second end in a gradient manner along the first direction; the plurality of groups of measuring electrodes are respectively led out from the side edges of the thin film, and the joints of the groups of measuring electrodes and the combined thin film are arranged along the first direction so as to respectively measure parameters corresponding to different doping component areas; the regulation electrode is positioned on the side surface of the combined film; wherein a gap is formed between the combined thin film and the regulation electrode, ionic liquid can be added to the substrate, the ionic liquid at least covers the combined thin film, the regulation electrode and the gap between the combined thin film and the regulation electrode, and the ionic liquid is used for changing the carrier concentration of the combined thin film. According to the method, combined film samples with different components do not need to be frequently prepared, the time consumption of line connection can be remarkably reduced, the manpower and material resource consumption is saved, and the data accuracy and the acquisition efficiency are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of superconducting electronics, and more specifically, to a combined thin film parameter measuring device, a measuring apparatus and a control method. Background Art

[0002] With the advancement and development of science and technology, superconducting materials are increasingly being studied and applied, especially high-temperature superconducting materials. The mechanism of high-temperature superconductivity is a hot topic in the current research field of superconductivity. By testing superconducting material samples under different states and obtaining their corresponding phase diagrams, it is of great significance for the study of the mechanism of high-temperature superconductivity.

[0003] Ionic liquids contain conductive ions and can be widely used to regulate material properties, especially to continuously adjust carrier concentration. Superconducting materials can be regulated by ionic liquids to obtain the corresponding ionic liquid regulation phase diagram of superconducting materials. Furthermore, by combining it with the chemical doping component phase diagram of superconducting materials, a high-dimensional phase diagram of chemical components and ionic liquid regulation can be drawn.

[0004] However, the existing ionic liquid regulation experimental method first requires the synthesis of a large number of single-component samples and the separate ionic liquid regulation experiments, which is not only time-consuming but also consumes huge manpower, material and financial resources; secondly, it is difficult to ensure that the states of the single-component samples prepared in batches are similar.

[0005] Therefore, how to efficiently and stably obtain samples with different chemical doping components and regulate them with ionic liquids is the key to obtaining a high-dimensional phase diagram combining the corresponding chemical components with ionic liquid regulation. Summary of the invention

[0006] In view of the above problems, the purpose of the present invention is to provide a combined thin film parameter measurement device, a measuring apparatus and a control method to efficiently and conveniently obtain the chemical composition of superconducting samples and the high-dimensional phase diagram of ionic liquid control.

[0007] According to one aspect of the present invention, a combined thin film parameter measurement device is provided, comprising: a substrate; a combined thin film, the combined thin film is arranged on a first surface of the substrate, the content of a predetermined doping component in the combined thin film changes continuously and gradually along a first direction from a first end of the combined thin film to a second end of the combined thin film, the first direction being on a plane where the combined thin film is located; a plurality of groups of measuring electrodes, the plurality of groups of measuring electrodes are respectively led out from the side edges of the combined thin film, and the connection between each group of measuring electrodes and the combined thin film is arranged along the first direction to respectively measure parameters corresponding to different doping component regions in the combined thin film; a control electrode, the control electrode is arranged on the first surface of the substrate, the control electrode is located on the side of the combined thin film, and the side edge of the combined thin film extending along the first direction is arranged opposite to the control electrode; wherein a gap is provided between the combined thin film and the control electrode, an ionic liquid can be added to the substrate, the ionic liquid at least covers the combined thin film and the control electrode and the gap between the combined thin film and the control electrode, and the ionic liquid is used to change the carrier concentration of the combined thin film to achieve continuous control of the superconductivity of the combined thin film.

[0008] Optionally, the combined film includes FeSe 1-x Te x or FeSe 1-x S x , wherein x changes continuously gradiently between a first value and a second value along the first direction.

[0009] Optionally, each group of the measuring electrodes includes four electrodes, and each group of the measuring electrodes measures the electrical properties of the area corresponding to the group of measuring electrodes in the combined thin film by a four-wire method.

[0010] Optionally, the multiple groups of measuring electrodes are all located on the same side of the combined film, and the regulating electrodes are located on the other side of the combined film.

[0011] According to another aspect of the present invention, there is provided a combined thin film parameter measuring device, comprising: a chamber, which is a closed chamber; a combined thin film parameter measuring device as described above; a voltage source, one end of which is connected to the first end of the combined thin film, and the other end of which is connected to the regulating electrode; a current source, one end of which is connected to the first end of the combined thin film, and the other end of which is connected to the second end of the combined thin film; wherein the measuring device is located in the chamber, and a plurality of groups of measuring electrodes in the measuring device are respectively connected to voltage measuring modules, and the electrical properties of the combined thin film are obtained through the voltage measuring modules.

[0012] Optionally, it further includes: a temperature sensor located in the chamber, the temperature sensor is used to detect the temperature of the combined film; a temperature regulating module connected to the chamber, the temperature regulating module is used to regulate the temperature in the chamber.

[0013] Optionally, it further includes an air pressure regulating module, which is connected to the chamber and is used to change the pressure in the chamber.

[0014] According to another aspect of the present invention, there is provided a method for measuring and controlling parameters of a combined thin film, comprising: forming a gradient component combination layer on a substrate; performing graphic processing on the gradient component combination layer to form a combined thin film and multiple groups of measuring electrodes; forming a control electrode on the substrate; adding an ionic liquid on the substrate, wherein the ionic liquid at least covers the combined thin film and the control electrode and the gap between the combined thin film and the control electrode; and measuring the superconducting transition temperature of the combined thin film.

[0015] Optionally, measuring the superconducting transition temperature of the combined film includes: connecting one end of a current source to a first end of the combined film, and connecting the other end of the current source to a second end of the combined film; connecting each group of measuring electrodes to a voltage measuring module, respectively; turning on the current source, the voltage measuring module and the temperature sensor, applying current to the combined film through the current source, obtaining voltage data of the combined film in the area corresponding to each group of measuring electrodes through the voltage measuring module, obtaining temperature data of the combined film according to the temperature sensor, and obtaining the superconducting transition temperature corresponding to different doping component contents in the combined film according to the temperature data and the voltage data.

[0016] Optionally, measuring the superconducting transition temperature of the combined film also includes: connecting one end of a voltage source to a control electrode, and connecting the other end of the voltage source to a first end of the combined film; turning on the voltage source, and regulating the carrier concentration of the combined film through the ionic liquid, to obtain the superconducting transition temperature of the combined film under the regulation of the ionic liquid.

[0017] According to the combined thin film parameter measurement device, measuring apparatus and control method provided by the present invention, the combined thin film in the measuring device can realize continuous gradient changes of doping components in a sample, which can significantly improve the efficiency of phase diagram drawing and superconducting mechanism research; in the combined thin film measurement device of the present invention, the combined thin films of different gradient components are grown and formed in the same batch, which can ensure that the states of different components in the combined thin film are similar, improve the consistency of the state of the sample (combined thin film), and help eliminate other interference. Furthermore, a control electrode is also provided on one side of the combined thin film in the measuring device, so that it can realize ionic liquid control. The measuring device combines the gradient component combined thin film with the ionic liquid control, and can quickly obtain a high-dimensional phase diagram combining chemical components and ionic liquid control. The combined thin film parameter measurement device, measuring apparatus and control method of the present invention not only do not need to frequently prepare combined thin film samples of different components, but also can significantly reduce the time consumption of line connection, save manpower and material consumption, and improve data accuracy and acquisition efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and other objects, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0019] Figure 1 A schematic diagram showing a combined thin film parameter measuring device according to a first embodiment of the present invention;

[0020] Figure 2 A schematic diagram showing a combined thin film parameter measuring device according to a second embodiment of the present invention;

[0021] Figure 3 A schematic diagram showing a combined thin film parameter measuring device according to a first embodiment of the present invention;

[0022] Figure 4 A flow chart showing the combined thin film parameter measurement and control method of the present invention;

[0023] Figure 5 The superconducting transition temperature control phase diagram obtained by using the combined thin film parameter measurement and control method of the present invention is shown. DETAILED DESCRIPTION

[0024] The present invention will be described in more detail below with reference to the accompanying drawings. In each of the accompanying drawings, the same elements are represented by similar reference numerals. For the sake of clarity, the various parts in the accompanying drawings are not drawn to scale. In addition, some well-known parts may not be shown.

[0025] Many specific details of the present invention are described below, such as device structure, materials, dimensions, processing technology and techniques, so as to more clearly understand the present invention. However, as those skilled in the art will appreciate, the present invention may be implemented without following these specific details.

[0026] Figure 1 A schematic diagram of a combined thin film parameter measurement device according to a first embodiment of the present invention is shown; the combined thin film parameter measurement device comprises: a substrate 100, a combined thin film 110, a measuring electrode 120 and a regulating electrode 130, wherein the combined thin film 110, the measuring electrode 120 and the regulating electrode 130 are all located on the first surface of the substrate 100, the combined thin film 110 and the measuring electrode 120 are, for example, located in the upper area of ​​the first surface of the substrate 110, and the regulating electrode 130 is located in the lower area of ​​the first surface of the substrate 110.

[0027] Specifically, the substrate 100 is, for example, a CaF2 substrate, and its size is, for example, 10 mm*10 mm. The combined film 110 is, for example, a FeSe 1-x Te x The composition gradient composite film, the outline of the composite film 110 is, for example, a rectangle extending in the direction of the dotted arrow in the figure (the first direction), and includes a first end 111 and a second end 112 and a first side edge and a second side edge connected to the first end 111 and the second end 112, respectively, and the first side edge and the second side edge extend, for example, in the first direction. 1-x Te x The x in the combined film 110 changes continuously and gradually between a first value and a second value along the first direction. Specifically, the Te content x changes continuously from 0 to 1 along the first direction. Of course, the combined film 110 can also be FeSe 1-x S xA composition gradient composite film or other ferroelectric film, wherein x also changes continuously and gradiently between a first value and a second value along a first direction. The composite film 110 is formed by, for example, a gradient composition composite layer formed on a substrate 100 by a laser pulse deposition process through a patterning process, and the measuring electrode 120 is formed together with the composite film 110, for example. Specifically, the gradient composition composite layer on the substrate 100 is patterned, and redundant parts are removed, and a main bridge with a rectangular outline is retained as the composite film 110, and a plurality of measuring electrodes 120 connected to the main bridge are also retained. A plurality of measuring electrodes 120 are respectively led out from the side of the combined film 110, and the connection points between the plurality of measuring electrodes 120 and the combined film 110 are, for example, arranged at equal intervals along the first direction. The plurality of measuring electrodes 120 are, for example, all located on the upper side of the combined film 110 and connected to the first side of the combined film 110. The plurality of measuring electrodes 120 are arranged in groups, for example, four measuring electrodes 120 form a measuring group 121, and the electrical properties of the region of the combined film corresponding to the measuring group 121 are characterized by a four-wire method. In this design, the component variation in the combined film 110 corresponding to the measuring electrode 120 is small, and the design is suitable for finely measuring the electrical properties of different component gradients of the combined film 110. Because the connection points between the plurality of measuring electrodes 120 and the combined film 110 are arranged at equal intervals along the first direction, the measuring groups formed by different measuring electrodes 120 correspond to the regions of the combined film 110 with different doping components, so that the electrical properties of the combined films with different doping components can be obtained and then their superconducting transition temperatures can be obtained. Of course, the measuring electrode 120 can also be prepared by welding indium on the surface of the combined film 110 , setting bonding wires, coating conductive glue (silver glue) and other methods, which will not be described in detail here.

[0028] The lower region of the combined film 110 is provided with a control electrode 130, for example, which is also located on the substrate 100. The control electrode 130 is, for example, a metal electrode made of gold or platinum or other materials by electron beam evaporation process. The control electrode 130 is used as a gate, and an appropriate amount of ionic liquid is dripped between the combined film 110 and the control electrode 130, and the ionic liquid covers the control electrode 130, the combined film 110 and the gap between the two; and then a bias voltage is applied to the first end 121 of the combined film 110 by connecting the control electrode 130 and the combined film 110 respectively through a DC voltage source, so as to achieve the control of the carrier concentration of the combined film 110.

[0029] Figure 2A schematic diagram of a combined thin film parameter measurement device according to a second embodiment of the present invention is shown; the second embodiment is similar to the first embodiment, except that a plurality of measuring electrodes 120 are respectively arranged on the upper and lower sides of the combined thin film 110, but sufficient space is left on the lower side of the combined thin film 110 to arrange the control electrode 130. The plurality of measuring electrodes 120 are distributed on both sides of the combined thin film 110, and the Hall effect of different component samples in the combined thin film 110 can be measured in situ while being controlled.

[0030] Figure 3 The schematic diagram of the combined thin film parameter measurement device of the first embodiment of the present invention is shown; the combined thin film parameter measurement device includes: a chamber, a combined thin film parameter measurement device, a voltage source Vg, a current source 150, a voltage measurement module 160, a temperature sensor, a temperature adjustment module and an air pressure adjustment module. The combined thin film parameter measurement device is located in the chamber. In order to better illustrate the connection relationship between the combined thin film parameter measurement device and the voltage source Vg, the current source 150 and the voltage measurement module 160, the chamber, the temperature sensor, the temperature adjustment module, the air pressure adjustment module and other parts are omitted in the figure, and the combined thin film 110 is illustrated by dot filling, and the ionic liquid 140 is illustrated by oblique line filling.

[0031] One end of the voltage source Vg is connected to the control electrode 130, and the other end of the voltage source Vg is connected to the first end of the combined film 110. Specifically, the voltage source Vg is a DC voltage source, the positive electrode of the voltage source Vg is connected to the control electrode 130, and the negative electrode of the voltage source Vg is connected to the first end of the combined film 110. The added ionic liquid 140, for example, covers the combined film 110 and the control electrode 130 and the gap therebetween. A bias voltage is applied between the combined film 110 and the control electrode 130 through the voltage source, thereby changing the carrier concentration of the combined film 110 and realizing continuous regulation of the superconductivity of the combined film 110.

[0032] One end of the current source 150 is connected to the first end of the combined film 110 through the voltage source Vg, and the other end of the current source 150 is connected to the second end of the combined film 110, that is, the first end of the combined film 110 is I-, the second end is I+, and the current direction in the combined film 110 is from I+ to I-. Taking part of the measuring electrodes 120 as an example, the V+ end and the V- end of the measuring electrode 120 shown in the figure are respectively connected to the voltage measuring module 160, and the combined film measuring device is placed in a low-temperature magnetic field environment (cooling the closed chamber), and the resistance and Hall potential of the combined film 110 in the area corresponding to the measuring electrode 120 are collected and obtained through the voltage measuring module 160, and the superconducting transition temperature is obtained from the temperature sensor in the chamber. Through the data obtained from multiple measuring electrodes 120, combined with the regulation status of the ionic liquid, a high-dimensional phase diagram of the doping components of the combined film and the regulation change of the ionic liquid can be drawn according to the obtained information.

[0033] Figure 4 A flow chart showing the combined thin film parameter measurement and control method of the present invention; the combined thin film parameter measurement method comprises:

[0034] In step S10, a gradient component combination layer is formed on the substrate; specifically, for example, a laser pulse deposition process is used to grow a gradient component combination layer covering the first surface of the substrate on the substrate, and the doping components in the gradient component combination layer, for example, show a continuous gradient change along a direction parallel to the first surface of the substrate.

[0035] In step S20, the gradient component combination layer is patterned to form a combination film and a plurality of groups of measuring electrodes; specifically, a photoresist is coated on the surface of the gradient component combination layer, and then a pre-designed pattern (including a long strip of the combination film and the measuring electrodes connected to the combination film) is exposed using ultraviolet lithography equipment, and then ion beam etching is used to remove excess parts of the gradient component combination layer, leaving the pre-designed combination film and a plurality of measuring electrodes.

[0036] In step S30, a control electrode is formed on the substrate; specifically, a metal layer is formed in a blank area on one side of the combined film by electron beam evaporation process as a control electrode, for example, metal elements such as gold or platinum are used; further, the control electrode is used as a gate, and when ionic liquid is dripped between the combined film and the control electrode, a DC voltage source can be used to apply a bias voltage between the combined film and the control electrode, thereby regulating the carrier concentration of the combined film.

[0037] In step S40, an ionic liquid is added to the substrate; specifically, Figure 3 The ionic liquid 140 is dripped into the oblique line filling area shown. The ionic liquid 140 covers the combined film 110 and the regulating electrode 130 as well as the gap therebetween.

[0038] In step S50, the superconducting transition temperature of the combined thin film is measured; specifically, the steps include connecting one end of a voltage source to a control electrode, and connecting the other end of the voltage source to a first end of the combined thin film; connecting one end of a current source to the first end of the combined thin film via the voltage source, and connecting the other end of the current source to a second end of the combined thin film; and connecting each group of measuring electrodes to a voltage measuring module respectively;

[0039] Turn on the current source, voltage source, voltage measurement module, temperature adjustment module, temperature sensor and air pressure adjustment module; the current source applies current to the combined film, and the voltage source applies a bias voltage between the combined film and the control electrode to change the carrier concentration of the combined film and achieve continuous control of the superconductivity of the combined film. The entire device is placed in a chamber with a low-temperature magnetic field environment, and the resistance and Hall signal of the combined film are collected through the voltage measurement module; the superconducting transition temperature of the combined film is obtained based on the resistance-temperature data, and a phase diagram combining the doping component and the ionic liquid control changes can be drawn based on the above data.

[0040] Figure 5 The superconducting transition temperature control phase diagram obtained by the combined film parameter measurement and control method of the present invention is shown. Figure 5 As shown, the ordinate is temperature T, and the abscissa is the doping content of Te in the combined film, wherein the combined film is regulated by ionic liquid, and the carrier concentration of the combined film is continuously changed by changing the voltage of the voltage source (bias voltage), and the hollow dots represent the superconducting transition temperature of the combined film in the initial state regulated by the ionic liquid; the solid dots represent the superconducting transition temperature of the combined film in the final state regulated by the ionic liquid; specifically, the carrier concentration gradually increases from the initial state to the final state regulated, and the shadow 1 in the figure represents the temperature range in which the combined film can achieve superconductivity in the initial state regulated by the ionic liquid, and the shadow 2 represents the temperature range in which the combined film can achieve superconductivity in the final state regulated by the ionic liquid. Of course, part of the shadow 2 is blocked by the shadow 1 and cannot be seen. The above-mentioned combined film parameter measurement method can be used to quickly and conveniently obtain the following: Figure 5 High-dimensional phase diagram of the combined film with gradient composition combined with ionic liquid regulation.

[0041] According to the combined thin film parameter measurement device, measuring apparatus and control method provided by the present invention, the combined thin film in the measuring device can realize continuous gradient changes of doping components in a sample, which can significantly improve the efficiency of phase diagram drawing and superconducting mechanism research; in the combined thin film measurement device of the present invention, the combined thin films of different gradient components are grown and formed in the same batch, which can ensure that the states of different components in the combined thin film are similar, improve the consistency of the state of the sample (combined thin film), and help eliminate other interference. Furthermore, a control electrode is also provided on one side of the combined thin film in the measuring device, so that it can realize ionic liquid control. The measuring device combines the gradient component combined thin film with the ionic liquid control, and can quickly obtain a high-dimensional phase diagram combining chemical components and ionic liquid control. The combined thin film parameter measurement device, measuring apparatus and method of the present invention not only do not need to frequently prepare combined thin film samples of different components, but also can significantly reduce the time consumption of line connection, save manpower and material consumption, and improve data accuracy and acquisition efficiency.

[0042] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0043] According to the embodiments of the present invention as described above, these embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and changes can be made based on the above description. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can make good use of the present invention and the modified use based on the present invention. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A combined thin film parameter measurement device, comprising: substrate; A combined thin film, the combined thin film is disposed on the first surface of the substrate, the content of the predetermined doping component in the combined thin film changes continuously and gradually along a first direction from a first end of the combined thin film to a second end of the combined thin film, and the first direction is on a plane where the combined thin film is located; A plurality of groups of measuring electrodes, the plurality of groups of measuring electrodes are respectively led out from the sides of the combined thin film, and the connection between each group of measuring electrodes and the combined thin film is arranged along the first direction to respectively measure the parameters corresponding to the regions with different doping components in the combined thin film; A control electrode, wherein the control electrode is disposed on the first surface of the substrate, the control electrode is located on the side of the combined film, and the side of the combined film extending along the first direction is disposed opposite to the control electrode; There is a gap between the combined film and the control electrode, and an ionic liquid can be added to the substrate. The ionic liquid at least covers the combined film and the control electrode and the gap between the combined film and the control electrode. The ionic liquid is used to change the carrier concentration of the combined film to achieve continuous control of the superconductivity of the combined film.

2. The measuring device according to claim 1, characterized in that The combined thin film includes FeSe 1-x Te x or FeSe 1- x S x , wherein x changes continuously gradiently between a first value and a second value along the first direction.

3. The measuring device according to claim 1, characterized in that Each group of the measuring electrodes includes four electrodes, and each group of the measuring electrodes measures the electrical properties of the area corresponding to the group of measuring electrodes in the combined thin film by a four-wire method.

4. The measuring device according to claim 1, characterized in that The multiple groups of measuring electrodes are all located on the same side of the combined film, and the regulating electrodes are located on the other side of the combined film.

5. A combined thin film parameter measuring device, comprising: A chamber, wherein the chamber is a closed chamber; A combined thin film parameter measurement device, wherein the combined thin film parameter measurement device is the combined thin film parameter measurement device according to any one of claims 1 to 4; A voltage source, one end of which is connected to the first end of the combined film, and the other end of which is connected to the regulating electrode; A current source, one end of which is connected to the first end of the combined film, and the other end of which is connected to the second end of the combined film; Wherein, the measuring device is located in the chamber, and the multiple groups of measuring electrodes in the measuring device are respectively connected to voltage measuring modules, and the electrical properties of the combined film are obtained through the voltage measuring modules.

6. The measuring device according to claim 5, characterized in that Also includes: A temperature sensor is located in the chamber, and is used to detect the temperature of the combined film; A temperature regulating module is connected to the chamber, and is used to regulate the temperature in the chamber.

7. The measuring device according to claim 6, characterized in that It also includes an air pressure regulating module, which is connected to the chamber and is used to change the pressure in the chamber.

8. A combined thin film parameter measurement and control method, comprising: forming a gradient composition combination layer on a substrate; Graphically processing the gradient component combination layer to form a combination film and a plurality of groups of measuring electrodes; forming a control electrode on a substrate; Adding ionic liquid on the substrate, wherein the ionic liquid at least covers the combined thin film and the regulating electrode and the gap between the combined thin film and the regulating electrode; The superconducting transition temperature of the combined film was measured.

9. The measurement and control method according to claim 8, wherein: Measurement of superconducting transition temperature of composite thin films includes: Connecting one end of a current source to the first end of the combined film, and connecting the other end of the current source to the second end of the combined film; Connect each group of measuring electrodes to the voltage measuring module respectively; Turn on the current source, the voltage measurement module and the temperature sensor, apply current to the combined film through the current source, obtain the voltage data of the combined film in the area corresponding to each group of measurement electrodes through the voltage measurement module, obtain the temperature data of the combined film according to the temperature sensor, and obtain the superconducting transition temperature corresponding to different doping component contents in the combined film according to the temperature data and the voltage data.

10. The measurement and control method according to claim 9, wherein the superconducting transition temperature measurement of the combined thin film further comprises: Connecting one end of the voltage source to the regulating electrode, and connecting the other end of the voltage source to the first end of the combined film; The voltage source is turned on, and the carrier concentration of the combined thin film is regulated by the ionic liquid to obtain the superconducting transition temperature of the combined thin film under the regulation of the ionic liquid.

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