Gas sensitive detector based on halide perovskite material and preparation method thereof

Abstract

The invention provides a gas sensitive detector based on a halide perovskite material and a preparation method thereof, and relates to the technical field of semiconductor gas detectors. The gas sensitive detector comprises: an insulating base; the gas sensitive material is arranged on the insulating base and is used for carrying out gas detection by utilizing a negative photoelectric effect generated by adsorbing gas, and the gas sensitive material is a manganese-doped Cs4PbBr6 single crystal material. According to the gas sensitive detector, a manganese-doped Cs4PbBr6 material is adopted as a gas detection material of the gas sensitive detector, the adsorption capacity of Cs4PbBr6 crystal to air is enhanced through Mn doping, and adsorbed gas and the surface of the material are subjected to physical reaction and chemical reaction, so that a large number of electron-hole pairs are generated on the surface of the material, the carrier concentration of the surface is increased, the potential barrier is reduced, and the performance of the gas sensitive detector is improved. When a 405nm laser is used for irradiation, photon energy is absorbed by gas adsorbed on the surface of the material, a desorption phenomenon occurs, and the conductivity of the surface of the material is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor gas detectors, and particularly relates to a gas-sensitive detector based on halide perovskite materials and a preparation method thereof. Background Art

[0002] High vacuum has a wide range of applications in industrial production and daily life. For example, cryogenic vacuum pipes for transporting liquefied natural gas, high-vacuum multi-layer adiabatic ultra-low temperature containers, etc. Therefore, the detection of whether the vacuum environment leaks is crucial. As a device that can respond to one or more gases (such as changes in physical properties such as conductivity), the unique gas-sensitive response of a semiconductor gas detector stems from the strong and weak changes in the resistivity of the semiconductor itself as the test gas is adsorbed and desorbed: when the semiconductor material comes into contact with or separates from the gas to be detected, it will undergo physical and chemical reactions with the gas, electrons will transfer, causing changes in the conductivity of the material, thereby generating an electrical signal. By comparing the difference in electrical signals before and after the test, the change in the ambient atmosphere can be reflected. Therefore, a semiconductor gas detector sensitive to air has the ability to detect the vacuum degree.

[0003] Halide perovskite materials have the advantages of tunable bandgap, high carrier mobility, sensitive surface effect, low cost, simple preparation method, etc., and are one of the most popular optoelectronic materials at present. However, traditional halide perovskites such as CsPbBr3 and other materials are not sensitive to air response, and their disadvantages of poor chemical stability greatly limit their application in the field of gas-sensitive detectors. Therefore, there is an urgent need to develop a highly stable and air-sensitive gas-sensitive detector based on halide perovskite materials. Summary of the Invention

[0004] In view of the above problems, the present invention provides a gas-sensitive detector based on halide perovskite materials and a preparation method thereof.

[0005] According to one aspect of an embodiment of the present invention, a gas-sensitive detector based on halide perovskite materials is provided, including: an insulating base; a gas-sensitive material disposed on the insulating base for gas detection by utilizing the negative photoelectric effect generated by adsorbed gas, wherein the gas-sensitive material is a manganese-doped Cs4PbBr6 single crystal material.

[0006] According to an embodiment of the present invention, the gas-sensitive detector based on halide perovskite materials further includes: electrodes disposed on both sides of the gas-sensitive material and respectively connected to the gas-sensitive material; a laser light source disposed above the insulating base for irradiating the gas-sensitive material.

[0007] According to an embodiment of the present invention, the electrodes include: a gold sheet fixed on the insulating base; a gold wire, one end of which is connected to the gold sheet and the other end is connected to the gas-sensitive material.

[0008] According to an embodiment of the present invention, the wavelength of the laser light source is 300 nm to 500 nm.

[0009] According to another aspect of the embodiments of the present invention, a method for preparing a gas sensor detector based on a halide perovskite material is provided, including: preparing an insulating base, wherein electrodes are pre-prepared on the insulating base; using a manganese-doped Cs4PbBr6 single crystal material as the gas-sensitive material and adhering it to the insulating base; connecting the electrodes and the gas-sensitive material to form a good ohmic contact; externally placing the laser light source above the insulating base so that it can irradiate the gas-sensitive material and excite a photocurrent.

[0010] According to an embodiment of the present invention, a method for preparing a manganese-doped Cs4PbBr6 single crystal material includes: weighing cesium bromide powder, lead bromide powder, and manganese bromide powder, dissolving them in a dimethyl sulfoxide solution under heating and stirring conditions; filtering the turbid solution, placing the clear solution after filtering the turbid solution on a heating table and heating it, and allowing crystals to precipitate and grow by the method of supersaturated precipitation; washing the crystals and then drying them in a vacuum environment to obtain the manganese-doped Cs4PbBr6 single crystal material.

[0011] According to an embodiment of the present invention, the molar ratio among the cesium bromide powder, lead bromide powder, and manganese bromide powder is 1:1.2:0.3.

[0012] According to an embodiment of the present invention, the molar amount of the cesium bromide powder to the volume of the dimethyl sulfoxide solution is 0.6 mol∶1 L.

[0013] According to an embodiment of the present invention, the temperature for crystal precipitation and growth is 130 °C to 150 °C.

[0014] According to an embodiment of the present invention, the vacuum degree of the vacuum environment required for crystal drying is greater than 3×10 -3 Pa.

[0015] The gas sensor detector based on the halide perovskite material provided by the present invention has at least the following beneficial effects:

[0016] (1) For the gas sensor detector based on the halide perovskite material provided by the present invention, a manganese-doped Cs4PbBr6 material is used as the gas detection material of the gas sensor detector. By Mn doping, the adsorption ability of the Cs4PbBr6 crystal to air is enhanced. The adsorbed gas undergoes physical and chemical reactions with the material surface, resulting in a large number of electron-hole pairs being generated on the material surface, increasing the surface carrier concentration and reducing the potential barrier. When irradiated with a 405 nm laser, the photon energy is absorbed by the gas adsorbed on the material surface, causing a desorption phenomenon and a decrease in the surface conductivity of the material.

[0017] (2) The gas-sensitive detector based on halide perovskite materials provided by the present invention uses the negative photoelectric effect generated by the adsorption of air by manganese-doped Cs4PbBr6 material as the working principle of the detector. The fabricated gas-sensitive detector has different responses to the photocurrent excited by a 405 nm laser in vacuum and air environments, and has high sensitivity, fast response speed, and broad application prospects.

[0018] (3) The preparation method of the gas-sensitive detector based on halide perovskite materials provided by the present invention has low cost, simple process, and the crystal size can be controlled during growth, making it easy to realize industrial production. Brief Description of the Drawings

[0019] Through the following description of the embodiments of the present invention with reference to the drawings, the above-mentioned content and other objects, features, and advantages of the present invention will become clearer. In the drawings:

[0020] Figure 1 Schematically shows the structural diagram of the gas-sensitive detector based on halide perovskite materials according to an embodiment of the present invention.

[0021] Figure 2 Schematically shows the structural diagram of the equipment for growing manganese-doped Cs4PbBr6 single crystal material in the preparation method of the gas-sensitive detector based on halide perovskite materials according to an embodiment of the present invention.

[0022] Figure 3 Schematically shows the X-ray energy spectrum (EDS) pattern of the manganese-doped Cs4PbBr6 single crystal material in the preparation method of the gas-sensitive detector based on halide perovskite materials according to an embodiment of the present invention.

[0023] Figure 4 Schematically shows the X-ray photoelectron spectrum (XPS) pattern of the manganese-doped Cs4PbBr6 single crystal material in the preparation method of the gas-sensitive detector based on halide perovskite materials according to an embodiment of the present invention.

[0024] Figure 5 Schematically shows the curve of the current of the gas-sensitive detector based on halide perovskite materials according to an embodiment of the present invention changing with voltage.

[0025] Figure 6 Schematically shows the optical switch curve of the gas-sensitive detector based on halide perovskite materials according to an embodiment of the present invention in air and vacuum environments.

[0026]

Reference Signs

[0027] 1 - Insulating base;

[0028] 2 - Gas-sensitive material;

[0029] 3 - Electrode;

[0030] 4-laser light source. Detailed implementation manners

[0031] To make the objectives, technical solutions and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below with reference to specific embodiments and the accompanying drawings. Obviously, the described embodiments are only a part rather than all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention. The terms used herein are only for describing specific embodiments and are not intended to limit the present invention. The terms "including", "comprising", etc. used herein indicate the presence of the described features, steps, operations and / or components, but do not exclude the presence or addition of one or more other features, steps, operations or components.

[0032] In the present invention, unless otherwise clearly defined and limited, the terms "installed", "connected", "connected", "fixed", etc. shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection, an electrical connection or communication with each other; it may be a direct connection or an indirect connection through an intermediate medium, and it may be the internal communication of two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "longitudinal", "length", "circumferential", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the subsystem or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation to the present invention.

[0034] Throughout the drawings, the same elements are denoted by the same or similar reference numerals. When it may cause confusion in the understanding of the present invention, the conventional structures or configurations will be omitted. And the shapes, sizes, and positional relationships of the components in the drawings do not reflect the actual sizes, proportions, and actual positional relationships.

[0035] Similarly, to streamline the present invention and facilitate the understanding of one or more of the various inventive aspects, in the above description of the exemplary embodiments of the present invention, the various features of the present invention are sometimes grouped together into a single embodiment, figure, or description thereof. Descriptions referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0036] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Therefore, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0037] In the case of using expressions similar to "at least one of A, B, and C, etc.", generally, it should be interpreted according to the meaning that those skilled in the art usually understand such expressions (for example, "a system having at least one of A, B, and C" should include, but is not limited to, a system having only A, only B, only C, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.).

[0038] In the technical solution of the present invention, the processing of the data involved (such as including but not limited to user personal information), such as collection, storage, use, processing, transmission, provision, disclosure, and application, etc., all comply with the provisions of relevant laws and regulations, take necessary confidentiality measures, and do not violate public order and good customs.

[0039] Figure 1 The structural diagram of a gas sensor based on a halide perovskite material according to an embodiment of the present invention is schematically shown.

[0040] As Figure 1 shown, the gas sensor based on the halide perovskite material of this embodiment includes: an insulating base 1 and a gas-sensitive material 2.

[0041] The insulating base 1 is a plastic substrate and serves a supporting role.

[0042] The gas-sensitive material 2 is disposed on the insulating base 1 and is used to detect gases by utilizing the negative photoelectric effect generated by adsorbed gases. Among them, the gas-sensitive material is a manganese-doped Cs4PbBr6 single crystal material.

[0043] The gas sensor detector based on halide perovskite material provided by the present invention uses manganese-doped Cs4PbBr6 material as the gas detection material of the gas sensor detector. By doping with Mn, the adsorption ability of Cs4PbBr6 crystal to air is enhanced. The adsorbed gas undergoes physical and chemical reactions with the material surface, resulting in a large number of electron-hole pairs being generated on the material surface, increasing the carrier concentration on the surface and reducing the potential barrier. When irradiated with a 405nm laser, the photon energy is absorbed by the gas adsorbed on the material surface, causing a desorption phenomenon and a decrease in the surface conductivity of the material.

[0044] On the basis of the above embodiment, the gas sensor detector based on halide perovskite material of this embodiment further includes: an electrode 3 and a laser light source 4.

[0045] From Figure 1 Looking from the direction shown, the electrode 3 is provided on both sides of the gas-sensitive material 2 and is respectively connected to the gas-sensitive material 2. The electrode 3 is used to connect to an external power supply.

[0046] The electrode 3 includes a gold sheet and a gold wire. Among them, the gold sheet is fixed on the insulating base 1, one end of the gold wire is connected to the gold sheet, and the other end is connected to the gas-sensitive material 2.

[0047] The laser light source 4 is provided above the insulating base 1 and is used to irradiate the gas-sensitive material 2. The wavelength of the laser light source 4 is 300nm - 500nm. As a preferred embodiment, the wavelength of the laser light source 4 is 405nm.

[0048] The gas sensor detector based on halide perovskite material provided by the present invention uses the negative photoelectric effect generated by the adsorption of air by manganese-doped Cs4PbBr6 material as the working principle of the detector. The manufactured gas sensor detector has different responses to the photocurrent excited by a 405nm laser in vacuum and air environments, and has high sensitivity, fast response speed, and broad application prospects.

[0049] On the other hand, the embodiment of the present invention also provides a method for preparing a gas sensor detector based on halide perovskite material, including:

[0050] S1. Prepare an insulating base 1, where an electrode 3 is pre-prepared on the insulating base.

[0051] S2. Use manganese-doped Cs4PbBr6 single crystal material as the gas-sensitive material 2 and adhere it to the insulating base 1.

[0052] S3. Connect the electrode 3 and the gas-sensitive material 2 to make the electrode 3 and the gas-sensitive material 2 form a good ohmic contact.

[0053] In this embodiment, the method for forming a good ohmic contact is to perform heat treatment on the device at 120°C for 30 minutes.

[0054] S4. Place the laser light source 4 outside and above the insulating base 1 so that it can irradiate the gas-sensitive material 2 and excite a photocurrent.

[0055] In this embodiment, the laser light source 4 is a 405 nm wavelength laser.

[0056] According to an embodiment of the present invention, a method for preparing a manganese-doped Cs4PbBr6 single crystal material includes:

[0057] S10. Weigh cesium bromide powder, lead bromide powder, and manganese bromide powder, and dissolve them in a dimethyl sulfoxide solution under heating and stirring conditions.

[0058] In this embodiment, before operation S10, a screw-cap bottle with a capacity of 10 mL is taken in advance as the container for crystal growth. The screw-cap bottle is ultrasonically cleaned successively with dishwashing liquid, deionized water, acetone, isopropyl alcohol, and ethanol, and then 1.0214 g of cesium bromide, 2.1139 g of lead bromide, and 0.3092 g of manganese bromide powder are weighed and injected into 8 mL of dimethyl sulfoxide solution, and stirred with a magnetic stirrer for more than 6 hours while heating at 50 °C.

[0059] According to an embodiment of the present invention, the molar ratio among the cesium bromide powder, lead bromide powder, and manganese bromide powder is 1:1.2:0.3.

[0060] According to an embodiment of the present invention, the molar amount of the cesium bromide powder to the volume of the dimethyl sulfoxide solution is 0.6 mol∶1 L.

[0061] S20. Filter the turbid liquid, place the clear liquid after filtering the turbid liquid on a heating table and heat it, and make crystals precipitate and grow by the method of supersaturated precipitation.

[0062] In this embodiment, an oil-based filter with a pore size of 0.45 μm is used to filter the insoluble components, and the filtered clear liquid is injected into a cleaned screw-cap bottle.

[0063] S30. Wash the crystals and then dry them in a vacuum environment to obtain the manganese-doped Cs4PbBr6 single crystal material.

[0064] According to an embodiment of the present invention, the temperature for crystal precipitation and growth is 130 °C to 150 °C.

[0065] According to an embodiment of the present invention, the vacuum degree of the vacuum environment required for crystal drying is greater than 3×10 -3 Pa.

[0066] Figure 2 Schematically shows a structural diagram of the equipment for growing the manganese-doped Cs4PbBr6 single crystal material in the method for preparing a gas-sensitive detector based on a halide perovskite material according to an embodiment of the present invention.

[0067] As Figure 2 shown, in this embodiment, operation S30 specifically includes: placing the screw - mouth bottle on a heating table at 140 °C, covering it with a glass beaker, the height of the beaker being about 3 cm higher than the bottle mouth, and placing an inclined plate inside the beaker to prevent the condensate from dripping into the solution and causing contamination.

[0068] Let it stand and heat for one week to slowly precipitate and grow the crystals. After the crystal size reaches the requirement, pour out the solution and take out the crystals.

[0069] Rinse the fresh crystals repeatedly with a dimethyl sulfoxide solution with a purity of 99.7% to make their surfaces purer.

[0070] Place the washed crystals in a vacuum device and vacuum - dry them for 3 hours.

[0071] Take out the dried crystals, connect them to the base with welded gold flakes using gold wires, and perform heat treatment at 120 °C for 30 minutes to form a good ohmic contact. The laser light source is an external light source, and when in use, it is fixed directly above the device.

[0072] The method for preparing a gas - sensitive detector based on a halide perovskite material provided by the present invention has low cost, simple process, and the crystal size can be controlled during growth, making it easy to realize industrial production.

[0073] Figure 3 Schematically shows the X - ray energy spectrum (EDS) map of the manganese - doped Cs4PbBr6 single - crystal material in the method for preparing a gas - sensitive detector based on a halide perovskite material according to an embodiment of the present invention.

[0074] As Figure 3 shown, the EDS energy spectrum test of the manganese - doped Cs4PbBr6 single - crystal shows that the material contains manganese element and the content is about 0.1%, indicating successful doping.

[0075] Figure 4 Schematically shows the X - ray photoelectron spectrum (XPS) map of the manganese - doped Cs4PbBr6 single - crystal material in the method for preparing a gas - sensitive detector based on a halide perovskite material according to an embodiment of the present invention.

[0076] As Figure 4 shown, in the energy spectrum of the X - ray photoelectron spectrum of the manganese - doped Cs4PbBr6 single - crystal material, a 2p 3 / 2 spin - orbit coupling splitting peak of Mn appears at a binding energy of 642 eV, and a 4f7 / 2 spin - orbit coupling splitting peak of pb appears at a binding energy of 138 eV, indicating that manganese replaces the position of pb in Cs4PbBr6 in the form of divalent positive. 2+ 's 2+ 's 2+ position.

[0077] Figure 5 Schematically shows the curve of the current of the gas sensor based on halide perovskite material according to an embodiment of the present invention varying with voltage.

[0078] As Figure 5 shown, the gas sensors prepared in the above embodiments are respectively subjected to I-V characteristic tests in the dark and under laser illumination. The linear relationship between the current and the voltage indicates that there is a good ohmic contact between the material and the electrode.

[0079] Figure 6 Schematically shows the optical switching curve of the gas sensor based on halide perovskite material according to an embodiment of the present invention in air and vacuum environment.

[0080] As Figure 6 shown, in order to more intuitively show the difference between the photocurrent and the dark current, the device is irradiated with 405 nm laser for 15 seconds every 15 seconds. Under the condition that a 1V bias voltage is kept constant, the current is continuously measured. It is obvious that the current value in the dark environment is greater than the current value under laser illumination, indicating that the gas-sensitive material in this embodiment has an obvious negative photovoltaic effect, as Figure 6 shown in (a) of

[0081] When the device is further subjected to vacuum treatment so that the vacuum degree of the environment it is in is lower than 1.1×10-2 Pa, the current in the material drops to a very small order of magnitude of a few tenths of pA and no longer exhibits the negative photovoltaic effect, indicating that the gas adsorbed on the material surface is the main reason for its conductivity, and Mn doping enhances the adsorption ability of Cs4PbBr6 to air. The adsorbed gas undergoes physical and chemical reactions with the material surface, generating a large number of electron-hole pairs on the material surface, increasing the carrier concentration on the surface and reducing the potential barrier. When irradiated with laser, the photon energy is absorbed by the gas adsorbed on the material surface, resulting in desorption, leading to a decrease in the surface conductivity of the material and thus the negative photovoltaic effect appears, as Figure 6 shown in (b) of

[0082] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation that a system and method according to various embodiments of the present invention may achieve. In this regard, each block in the flowchart or block diagram may represent a module, a segment of a program, or a portion of code that contains one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions noted in the blocks may occur in an order different from that noted in the accompanying drawings. For example, two consecutive blocks shown may actually be executed substantially in parallel, or they may sometimes be executed in the reverse order, depending on the functions involved. It should also be noted that each block in the block diagram or flowchart, and combinations of blocks in the block diagram or flowchart, may be implemented by a dedicated hardware-based system that performs the specified functions or operations, or may be implemented by a combination of dedicated hardware and computer instructions.

[0083] Those skilled in the art will appreciate that the features described in the various embodiments of the present invention may be combined or combined in various ways, even if such combinations or combinations are not explicitly described in the present invention. In particular, without departing from the spirit and teachings of the present invention, the features described in the various embodiments of the present invention may be combined and combined in various ways. All such combinations and combinations fall within the scope of the present invention.

[0084] The embodiments of the present invention have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present invention. Although the embodiments have been described separately above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. Without departing from the scope of the present invention, those skilled in the art can make various substitutions and modifications, and all such substitutions and modifications should fall within the scope of the present invention.

Claims

1. A gas sensor based on halide perovskite materials, characterized in that, Comprising: Insulating base; A gas-sensitive material, disposed on the insulating base, for gas detection by utilizing the negative photoelectric effect generated by adsorbed gas, wherein the gas-sensitive material is a manganese-doped Cs4PbBr6 single crystal material.

2. The gas sensor based on halide perovskite material according to claim 1, characterized in that, Further comprising: Electrodes, disposed on both sides of the gas-sensitive material, respectively connected to the gas-sensitive material; A laser light source, disposed above the insulating base, for irradiating the gas-sensitive material.

3. The gas sensor based on halide perovskite material according to claim 2, characterized in that, The electrode comprises: A gold sheet, fixed on the insulating base; A gold wire, one end connected to the gold sheet, and the other end connected to the gas-sensitive material.

4. The gas sensor based on a halide perovskite material according to claim 2, characterized in that, The wavelength of the laser light source is 300 nm to 500 nm.

5. A method for preparing a gas-sensing detector based on halide perovskite materials, which is used to prepare the gas-sensing detector based on halide perovskite materials according to any one of claims 1 to 4, characterized in that, Comprising: Prepare an insulating base, wherein electrodes are pre-prepared on the insulating base; Use the manganese-doped Cs4PbBr6 single crystal material as the gas-sensitive material and adhere it to the insulating base; Connect the electrode and the gas-sensitive material to form a good ohmic contact between the electrode and the gas-sensitive material; Place the laser light source outside the insulating base above it so that it can irradiate the gas-sensitive material and excite a photocurrent.

6. The preparation method of the gas sensor based on the halide perovskite material according to claim 5, characterized in that, The preparation method of the manganese-doped Cs4PbBr6 single crystal material comprises: Weigh cesium bromide powder, lead bromide powder and manganese bromide powder, and dissolve them in dimethyl sulfoxide solution under heating and stirring conditions; Filter the turbid liquid, place the clear liquid after filtering the turbid liquid on a heating table and heat it, and make the crystals precipitate and grow by the method of supersaturated precipitation; Wash the crystals and then dry them in a vacuum environment to obtain the manganese-doped Cs4PbBr6 single crystal material.

7. The preparation method of the gas sensor based on the halide perovskite material according to claim 6, wherein The molar ratio between the cesium bromide powder, the lead bromide powder and the manganese bromide powder is 1:1.2:0.

3.

8. The method for preparing a gas sensor based on a halide perovskite material according to claim 6, wherein The molar amount of the cesium bromide powder and the volume ratio of the dimethyl sulfoxide solution is 0.6 mol:1 L.

9. The method for preparing a gas sensor based on a halide perovskite material according to claim 6, wherein, The temperature for the crystal precipitation and growth is 130 °C to 150 °C.

10. The preparation method of the gas sensor based on the halide perovskite material according to claim 6, wherein, The vacuum degree of the vacuum environment required for drying the crystal is greater than 3×10 -3 Pa.

Images