GaN-based blue-green SLD based on quantum dot structure and manufacturing method thereof

Abstract

The invention discloses a nitride-based blue-green super-radiation light-emitting diode and a manufacturing method thereof, and relates to a semiconductor device and a preparation method thereof, in particular to a diode and a preparation method thereof. The nitride-based blue-green super-radiation light-emitting diode sequentially comprises a substrate, a buffer layer, a lower optical limiting layer, a lower barrier layer, a quantum dot light-emitting layer, an upper barrier layer, an upper optical limiting layer and an electrode contact layer from bottom to top. The manufacturing method comprises the steps of sequentially growing a buffer layer, a lower optical limiting layer, a lower barrier layer, a quantum dot light-emitting layer, an upper barrier layer, an upper optical limiting layer and an electrode contact layer on a substrate, etching to form a ridge-shaped waveguide structure, depositing an insulating layer and an electrode, and depositing a reflection increasing film on a non-light-emitting surface. The method is suitable for a high-performance SSL-VLC fusion system and various photoelectronic application scenes such as OCT, sensing, micro projection and the like.

Description

Technical Field

[0001] The present invention belongs to the technical field of electrochemical energy storage devices and preparation methods thereof, and specifically relates to a GaN-based broadband photoelectric conversion device based on a quantum dot structure and its application in an integrated photoelectric storage system. Background Art

[0002] In recent years, with the rapidly growing demand for high-performance light sources in applications such as smart lighting, in-vehicle communications, and consumer electronics, visible light communication (VLC) technology based on nitride materials has become a research hotspot. Light-emitting diodes (LEDs) and laser diodes (LDs), the primary light-emitting devices, are increasingly being integrated into solid-state lighting (SSL) and VLC systems. In particular, in the context of integrating high-speed communications with high-brightness lighting, improving modulation bandwidth and power output while ensuring light source safety and stability is a core research focus.

[0003] Currently, laser diodes (LDs) have achieved data transmission rates in the Gbps range, offering the advantages of high modulation bandwidth and high output power. However, LDs exhibit significant speckle noise and pose certain laser safety risks, limiting their application in near-eye displays, automotive lighting, and high-security communications. In contrast, LEDs offer superior safety and cost advantages, but are limited by the carrier recombination rate and the structure of the light-emitting layer, resulting in a low modulation bandwidth. High-speed communication requires the introduction of complex modulation algorithms or multiplexing schemes, resulting in high system complexity. To combine the advantages of both LEDs and LDs, superluminescent diodes (SLDs) are gaining increasing attention. Combining spontaneous emission with stimulated emission mechanisms, SLDs offer the advantages of high power, a wide spectrum, low coherence, and high directivity, making them a highly promising light source device for next-generation optical communications and imaging systems.

[0004] Currently, research has attempted to incorporate a multi-quantum well (QW) structure as the active region in SLDs to achieve broad spectral and high-power output. However, due to its two-dimensional confinement, the QW structure inherently suffers from narrow peak gain and limited spectral width, making it difficult to meet the performance requirements of high-performance SLDs in applications such as optical coherence tomography (OCT), micro-projection, gyroscopes, and high-resolution sensing. Furthermore, the multi-quantum well structure is prone to stress accumulation during growth, leading to an increase in lattice defects and a decrease in quantum efficiency. These factors collectively limit the performance of QW-based SLDs in the blue-green band.

[0005] Compared to quantum well structures, quantum dot (QD) structures, thanks to their three-dimensional confinement, can more effectively trap carriers in space, suppressing non-radiative recombination and carrier overflow, and effectively improving luminescence efficiency. Furthermore, by manipulating the size, density, and composition of the quantum dots, the emission wavelength can be tuned over a wide range within the blue-green wavelength range. When the quantum dot size distribution exhibits a certain degree of non-uniformity, the emission spectrum width is further increased, facilitating broadband output. Furthermore, the stress accumulation issue of quantum dot structures is significantly less than that of QW structures, making them more suitable for multilayer stacking or multi-wavelength control designs. While quantum dot structures offer superior carrier confinement and wavelength control capabilities compared to quantum wells, demonstrating promising broad-spectrum luminescence potential in SLD devices, several key challenges remain. Firstly, due to the difficulty in precisely controlling quantum dot size and density, the actual fabrication process is prone to excessively discrete size distribution or uneven arrangement, resulting in unstable luminescence intensity, large spectral fluctuations, and poor reproducibility, seriously impacting device consistency and reliability. On the other hand, quantum dot structures often rely on InGaN materials with high In content in the material design of the blue-green band. High In content can easily cause phase separation or uneven composition, resulting in enhanced non-radiative recombination and a decrease in material crystal quality, thereby limiting the internal quantum efficiency of the device.

[0006] Furthermore, some existing quantum dot SLD devices still utilize traditional planar epitaxial structures, ignoring the impact of waveguide design on beam directivity and heat dissipation, limiting the device's thermal stability and output uniformity under high-power operation. Furthermore, to achieve multi-wavelength synthesis or broad-spectrum output, existing structures often require stacking multiple layers of quantum dot light-emitting regions. However, these multilayer structures are prone to stress accumulation and increased dislocation defects, which in turn inhibit device efficiency and long-term reliability.

[0007] Therefore, how to achieve a blue-green superluminescent diode structure with controllable size distribution, good stress regulation, wide emission spectrum and high directionality by optimizing the design of quantum dot structure and its upper and lower potential barriers and confinement layers is still a technical problem that needs to be solved urgently in this field. Summary of the Invention

[0008] In order to solve the shortcomings of existing quantum dot SLDs, the present invention provides the following solutions: A GaN-based blue-green SLD based on a quantum dot structure, wherein the nitride-based blue-green superluminescent diode comprises, from bottom to top: substrate, buffer layer, lower optical confinement layer, lower barrier layer, quantum dot light-emitting layer, upper barrier layer, upper optical confinement layer and electrode contact layer.

[0009] Furthermore, the nitride-based blue-green superluminescent diode further includes a lower electrode and an upper electrode, wherein the lower electrode is arranged on the lower optical confinement layer, and the upper electrode is arranged on the electrode contact layer.

[0010] Furthermore, the nitride-based blue-green superluminescent diode further includes a ridge waveguide structure, and the ridge waveguide structure is etched from the electrode contact layer to the upper optical confinement layer.

[0011] Furthermore, the nitride-based blue-green superluminescent diode further includes a SiO2 insulating layer, and the SiO2 insulating layer covers the outside of the ridge waveguide structure.

[0012] Furthermore, a non-light-emitting surface of the nitride-based blue-green superluminescent diode is provided with an anti-reflection film.

[0013] Furthermore, the light emitting surface of the nitride-based blue-green superluminescent diode adopts a bevel design, and the inclination angle between the waveguide direction of the nitride-based blue-green superluminescent diode and the end face direction of the light emitting surface is 5°-40°.

[0014] A method for manufacturing a GaN-based blue-green SLD based on a quantum dot structure, the method comprising: S1. Providing a substrate, and growing a buffer layer with a thickness of 4-6 μm on top of the substrate at a growth temperature of 1060° C. and a growth rate of 2.5 μm / h; S2, at a growth temperature of 1060°C, a growth rate of 1.5 μm / h, an Al composition of 17%–74%, Si doping introduced by silane, and a carrier concentration of 1×10¹ 6 –1×10¹ 9 Under the condition of 100% CMOS, a lower optical confinement layer with a thickness of 0.5–1 μm is grown on top of the buffer layer; S3, at a growth temperature of 900°C, a growth rate of 2 μm / h, an In composition of 5%–10%, Si doping introduced by silane, and a carrier concentration of 1×10¹ 7 –1×10¹ 9 Under the condition of cm⁻³, a lower barrier layer with a thickness of 50–100 nm is grown on top of the lower optical confinement layer; S4, at a growth temperature of 700–800°C, a growth rate of 2 μm / h, an In composition of 15%–25%, and a carrier concentration of 1×10¹ 6 –1×10¹ 7 Under the condition of cm⁻³, a quantum dot light-emitting layer with different diameters and a thickness of 2–50 nm is grown on top of the lower barrier layer; S5, at a growth temperature of 900°C, a growth rate of 2 μm / h, an In composition of 5%–10%, Mg doping introduced via Cp2Mg, and a carrier concentration of 1×10¹ 7 –1×10¹ 8 Under the condition of cm⁻³, a p-type upper barrier layer with a thickness of 50–100 nm is grown on top of the quantum dot light-emitting layer; S6, at a growth temperature of 1060°C, a growth rate of 1.5 μm / h, an Al composition of 17%–74%, and a carrier concentration of 1×10¹ 7 –1×10¹ 8 Under the condition of cm⁻³, an upper optical confinement layer with a thickness of 0.5–1 μm is grown on top of the upper barrier layer; S7, at a growth temperature of 1060°C, a growth rate of 1.5 μm / h, an Al composition of 17%–74%, and a carrier concentration of 1×10¹ 8 –1×10¹ 9 Under the condition of cm⁻³, an electrode contact layer with a thickness of 0.1–0.2 μm is grown on top of the upper optical confinement layer; S8. Using photolithography combined with inductively coupled plasma etching technology, etching from the electrode contact layer to the upper optical confinement layer to form a ridge waveguide structure, wherein the ridge depth of the ridge waveguide structure is 1-2 μm, and depositing a SiO2 insulating layer outside the ridge waveguide structure using an inductively coupled plasma chemical vapor deposition process; S9, depositing Ti / Al / Ni / Au on the top of the lower optical confinement layer to form a lower electrode, wherein the lower electrode is an n-type ohmic contact electrode; depositing Pd / Au on the electrode contact layer to form an upper electrode, wherein the upper electrode is a p-type ohmic contact electrode; S10, depositing a reflection-enhancing film composed of five layers of AlN and five layers of MgF2 stacked on the non-light-emitting surface of the nitride-based blue-green superluminescent diode by magnetron sputtering to obtain the nitride-based blue-green superluminescent diode.

[0015] Furthermore, the thickness of the SiO2 insulating layer deposited in S8 is 200-300 nm.

[0016] Furthermore, the ratio of depositing Ti / Al / Ni / Au to form the lower electrode in S9 is Ti / Al / Ni / Au=20nm / 50nm / 20nm / 100nm; the ratio of depositing Pd / Au to form the upper electrode is Pd / Au=20nm / 50nm.

[0017] Furthermore, the thickness of each of the five layers of AlN and the five layers of MgF2 in S10 is 50-100 nm.

[0018] Compared with the prior art, the present invention has the following beneficial effects: 1. The GaN-based blue-green SLD described in the present invention achieves step-by-step stress transition and barrier matching by introducing barrier layers with a gradient in In composition above and below the InGaN quantum dot light-emitting layer. This effectively solves the defects caused by uneven quantum dot size distribution and stress concentration in the existing technology, significantly improves the uniformity of quantum dot nucleation and luminescence consistency, and broadens the spectral bandwidth of the device.

[0019] 2. The GaN-based blue-green SLD described in the present invention has an InGaN quantum dot structure with adjustable size and controllable In content in the light-emitting layer. The manufacturing method described in the present invention optimizes the growth temperature and rate of this structure, effectively solving the problem of easy phase separation of high In content in the prior art and significantly improving the structural integrity and luminescence stability of the device.

[0020] 3. The GaN-based blue-green SLD manufacturing method described in the present invention, by providing a non-polar c-axis oriented GaN substrate and combining it with MOCVD process control, effectively avoids the carrier separation problem caused by the strong built-in electric field in the polar plane structure, and significantly improves the radiative recombination efficiency and output power.

[0021] 4. The GaN-based blue-green SLD described in the present invention effectively limits light field diffusion and carrier escape by setting n-type and p-type AlGaN optical confinement layers above and below the quantum dot light-emitting area, solving the problems of low luminous efficiency and unstable output power in the existing technology, and significantly enhancing the device's light extraction capability and thermal stability.

[0022] 5. The GaN-based blue-green SLD described in the present invention also includes a ridge waveguide structure. The ridge waveguide structure is etched from the electrode contact layer to the upper optical confinement layer, which solves the problems of large multi-mode diffusion of the light beam, high speckle noise and poor directionality in the existing waveguide structure.

[0023] 6. This invention achieves continuous tunability of the emission wavelength from blue (approximately 470 nm) to green (approximately 530 nm) by precisely controlling the size, density, and indium content of InGaN quantum dots. This addresses the narrow and non-tunable emission band of conventional quantum well structures. By leveraging the non-uniform size distribution of quantum dots, multi-peak superposition and broad-spectrum output are achieved, while the central wavelength can be fine-tuned by adjusting growth parameters.

[0024] 7. This invention achieves a standardized fabrication process from epitaxy to device processing by fully integrating MOCVD epitaxial growth, ICP ridge waveguide etching, and ICPCVD / magnetron sputtering deposition processes. This addresses the low integration, poor manufacturing controllability, and difficulty in mass production of various processes in existing technologies. This process route precisely controls temperature, rate, thickness, and doping concentration, resulting in excellent process repeatability, manufacturing controllability, and potential for industrial production. The GaN-based blue-green SLD described in the present invention is suitable for technical fields such as light-assisted rechargeable battery systems, visible light communication-energy integrated modules, quantum dot-sensitized photoelectrochemical cells, micro-photoelectric energy storage units, and emergency lighting-energy storage integrated systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 Schematic diagram of a GaN-based blue-green SLD epitaxial structure based on a quantum dot structure described in Embodiment 1, with reference numerals: substrate 1, buffer layer 2, lower optical confinement layer 3, lower barrier layer 4, quantum dot light-emitting layer 5, upper barrier layer 6, upper optical confinement layer 7, electrode contact layer 8, lower electrode 9, upper electrode 10, ridge waveguide structure 11, SiO2 insulating layer 12; Figure 2 It is a growth schematic diagram of the metal organic chemical vapor deposition (MOCVD) method described in the seventh embodiment. DETAILED DESCRIPTION

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making any creative efforts shall fall within the scope of protection of the present invention.

[0027] Implementation Method 1 like Figure 1 As shown, a GaN-based blue-green SLD based on a quantum dot structure, the nitride-based blue-green superluminescent diode includes, from bottom to top, a substrate 1, a buffer layer 2, a lower optical confinement layer 3, a lower barrier layer 4, a quantum dot light-emitting layer 5, an upper barrier layer 6, an upper optical confinement layer 7 and an electrode contact layer 8.

[0028] The substrate 1 is a non-polar c-axis oriented GaN substrate; The buffer layer 2 is a GaN buffer layer; The lower optical confinement layer 3 is an n-type Si-doped AlGaN lower optical confinement layer; The lower barrier layer 4 is an InGaN lower barrier layer with a gradient In composition; The quantum dot light-emitting layer 5 is an InGaN quantum dot light-emitting layer; The upper barrier layer 6 is an InGaN upper barrier layer with a gradient In composition; The upper optical confinement layer 7 is a p-type Mg-doped AlGaN upper optical confinement layer; The electrode contact layer 8 is a p-type Mg heavily doped AlGaN electrode contact layer.

[0029] This embodiment uses a non-polar c-axis oriented GaN substrate, combined with an InGaN barrier layer with a gradient In composition and an InGaN quantum dot light-emitting layer, to achieve precise control of the quantum dot size and emission wavelength, effectively suppressing the quantum well polarization effect, thereby significantly improving the luminescence efficiency in the blue-green region and the superradiant characteristics of the light beam.

[0030] In this embodiment, the In composition changes gradually. In practical applications, the In composition preferably changes gradually.

[0031] Implementation Method 2 This embodiment further limits the first embodiment. Furthermore, the structure of the nitride-based blue-green superluminescent diode is: A GaN buffer layer 2 is epitaxially formed on top of the non-polar c-axis oriented GaN substrate 1 along a growth direction; an n-type Si-doped AlGaN lower optical confinement layer 3 epitaxially formed on top of the GaN buffer layer 2; An InGaN lower barrier layer 4 with a graded In composition is formed epitaxially on top of the n-type Si-doped AlGaN lower optical confinement layer 3; An InGaN quantum dot light-emitting layer 5 is formed epitaxially on top of the InGaN lower barrier layer 4 with a gradient In composition; An InGaN upper barrier layer 6 with a gradient In composition is formed epitaxially on the top of the InGaN quantum dot light-emitting layer 5; Epitaxially forming a p-type Mg-doped AlGaN upper optical confinement layer 7 on top of the InGaN upper barrier layer 6 with a graded In composition; A p-type Mg-heavily doped AlGaN electrode contact layer 8 is formed on top of the p-type Mg-doped AlGaN upper optical confinement layer 7 by epitaxial growth.

[0032] This embodiment achieves optimal matching of lattices, energy bands, and carrier injection between different material layers by precisely designing the stacking sequence of the heterogeneous layers on top of the non-polar c-axis-oriented GaN substrate, which includes, in order: a GaN buffer layer, an n-type Si-doped AlGaN lower optical confinement layer, an InGaN lower barrier layer with a gradient In composition, an InGaN quantum dot light-emitting layer, an InGaN upper barrier layer with a gradient In composition, a p-type Mg-doped AlGaN upper optical confinement layer, and a p-type Mg-heavily doped AlGaN electrode contact layer. This improves the interface quality, enhances the effective injection and recombination efficiency of carriers in the quantum dot region, and significantly enhances the optoelectronic performance of the device.

[0033] Implementation Method 3 This embodiment is a further limitation of the second embodiment. Furthermore, in the nitride-based blue-green superluminescent diode: The GaN buffer layer has a thickness of 4–6 μm; The thickness of the n-type Si-doped AlGaN lower optical confinement layer is 0.5–1 μm; The thickness of the InGaN lower barrier layer with a gradient In composition is 50-100 nm; The thickness of the InGaN quantum dot light-emitting layer is 2-50 nm; The thickness of the InGaN upper barrier layer with a gradient In composition is 50-100 nm; The thickness of the optical confinement layer on the p-type Mg-doped AlGaN is 0.5–1 μm; The thickness of the p-type Mg heavily doped AlGaN electrode contact layer is 0.1-0.2 μm.

[0034] Based on the second embodiment, this embodiment further limits the thickness of each layer in the nitride-based blue-green superluminescent diode, thereby achieving optimal thickness matching between the optical confinement layer and the quantum dot layer, thereby optimizing the light field distribution and carrier recombination position, effectively improving the light extraction efficiency and reducing the interface stress.

[0035] Implementation Method 4 This embodiment is a further limitation of the first embodiment. Furthermore, the nitride-based blue-green superluminescent diode further includes a lower electrode 9 and an upper electrode 10 . The lower electrode 9 is disposed on the lower optical confinement layer 3 , and the upper electrode 10 is disposed on the electrode contact layer 8 .

[0036] This embodiment provides a complete current injection path for the nitride-based blue-green superluminescent diode by setting a lower electrode 9 on the lower optical confinement layer and an upper electrode 10 on the electrode contact layer, ensuring that carriers are injected into the quantum dot light-emitting area in a low-impedance manner, thereby improving the device's electro-optical conversion efficiency and operating reliability.

[0037] Implementation Method Five This embodiment is a further limitation of the fourth embodiment. Further, Ti / Al / Ni / Au is deposited on the top of the lower optical confinement layer 3 to form a lower electrode 9, and the lower electrode 9 is an n-type ohmic contact electrode; Pd / Au is deposited on the electrode contact layer 8 to form an upper electrode 10, and the upper electrode 10 is a p-type ohmic contact electrode. Based on the fourth embodiment, this embodiment achieves excellent contact characteristics of the metal / semiconductor interface by depositing Ti / Al / Ni / Au on the top of the lower optical confinement layer to form an n-type ohmic contact lower electrode, and depositing Pd / Au on the top of the electrode contact layer to form a p-type ohmic contact upper electrode, thereby significantly reducing the contact resistance, improving the carrier injection efficiency, and ensuring stable operation of the device at high current density.

[0038] Implementation Method 6 This embodiment is a further limitation of the fifth embodiment. Furthermore, the ratio of depositing Ti / Al / Ni / Au to form the lower electrode 9 is Ti / Al / Ni / Au=20nm / 50nm / 20nm / 100nm; the ratio of depositing Pd / Au to form the upper electrode 10 is Pd / Au=20nm / 50nm.

[0039] Based on the fifth embodiment, this embodiment strictly limits the thickness of the Ti / Al / Ni / Au lower electrode layer to 20nm / 50nm / 20nm / 100nm, and the thickness of the Pd / Au upper electrode layer to 20nm / 50nm. The metal deposition process is optimized from the material thickness level, so that the lower electrode and the upper electrode achieve an optimal balance in thermal expansion and interface adhesion, further reducing the contact resistance and improving the thermal stability and reliability of the electrode.

[0040] Implementation Method Seven This embodiment is a further limitation of the first embodiment. Furthermore, the nitride-based blue-green superluminescent diode further includes a ridge waveguide structure 11 , and the ridge waveguide structure 11 is etched from the electrode contact layer 8 to the upper optical confinement layer 7 .

[0041] This embodiment introduces a ridge waveguide structure based on the first embodiment, and the ridge waveguide structure is formed by etching on the p-type Mg heavily doped AlGaN electrode contact layer (8) using photolithography and ICP etching plasma etching technology, thereby solving the problems of severe lateral diffusion and poor directivity of the light beam in the prior art and significantly improving the directivity and spatial mode control capability of the light beam.

[0042] Implementation Method Eight This embodiment is a further limitation of the seventh embodiment. Furthermore, the nitride-based blue-green superluminescent diode further includes a SiO 2 insulating layer 12 , and the SiO 2 insulating layer covers the outside of the ridge waveguide structure 11 .

[0043] Based on the seventh embodiment, this embodiment provides electrical insulation and insulation protection for the ridge side by covering the SiO2 insulating layer 12 on the outside of the ridge waveguide structure 11, thereby preventing sidewall leakage and reducing the surface recombination rate of the ridge side, thereby further improving the photoelectric conversion efficiency and the long-term stability of the device.

[0044] Implementation Method Nine This embodiment is a further limitation of the eighth embodiment. Furthermore, the SiO 2 insulating layer 12 is deposited on the outside of the ridge waveguide structure 11 of the nitride-based blue-green superluminescent diode using an inductively coupled plasma chemical vapor deposition process.

[0045] Based on the eighth embodiment, this embodiment adopts the inductively coupled plasma chemical vapor deposition (ICP-CVD) process to deposit the SiO2 insulating layer 12 on the outside of the ridge waveguide structure 11, thereby ensuring the density and uniformity of the SiO2 film, so that the insulating layer has excellent electrical isolation performance and moisture and heat resistance, thereby improving the reliability of the device in high humidity and high temperature environments.

[0046] Implementation Method 10 This embodiment is a further limitation of the first embodiment. Furthermore, a non-light-emitting surface of the nitride-based blue-green superluminescent diode is provided with an anti-reflection film.

[0047] This embodiment sets a reflection-enhancing film on the non-light-emitting surface and uses the high-reflection structure on this surface to reflect the backward-emitted light back to the quantum dot light-emitting layer, thereby increasing the number of repeated reflections and achieving a light intensity accumulation effect, thereby improving the overall light extraction efficiency and superradiance gain of the device.

[0048] Implementation Method Eleven This embodiment is a further limitation of the tenth embodiment. Furthermore, the anti-reflection film is an AlN / MgF2 stacked structure, and its reflectivity is greater than 95%.

[0049] This embodiment adopts an anti-reflection film with an AlN / MgF2 stacked structure, and the reflectivity of the stacked structure is greater than 95%, forming a highly reflective mirror on the non-light-emitting surface, which efficiently reflects a large amount of backward-emitted light to the active area, further improving the light intensity density in the cavity, and has the effect of significantly enhancing the luminous power and improving the beam divergence angle.

[0050] Implementation Method Twelve This embodiment is a further limitation of the eleventh embodiment. Furthermore, a reflection-enhancing film composed of five layers of AlN and five layers of MgF2 is deposited on the non-light-emitting surface of the nitride-based blue-green superluminescent diode by magnetron sputtering.

[0051] This embodiment uses magnetron sputtering to deposit an anti-reflection film process with five layers of AlN and five layers of MgF2 stacked alternately, ensuring high quality and low interface defect density at the interfaces of each layer, achieving high reflectivity of the anti-reflection film over a wide wavelength range, while also having good adhesion and mechanical stability, thereby effectively improving the optical performance and service life of the device.

[0052] Implementation Method Thirteen This embodiment is a further limitation of the twelfth embodiment. Furthermore, the thickness of the five layers of AlN and the five layers of MgF 2 is 50-100 nm.

[0053] This embodiment limits the thickness of each AlN and MgF2 layer in the anti-reflection film to 50-100nm, and uses precisely controlled thickness matching conditions to achieve an interference enhancement effect within the desired wavelength range. The anti-reflection film exhibits high performance with a reflectivity greater than 95% in a wide band, thereby taking into account both optical gain and bandwidth consistency in the blue-green superluminescent band.

[0054] Implementation Method 14 This embodiment is a further limitation of embodiment 1 or embodiment 7. Furthermore, the light-emitting surface of the nitride-based blue-green superluminescent diode is not provided with an antireflection film, and a bevel design is adopted. The waveguide direction of the nitride-based blue-green superluminescent diode is tilted at an angle of 5°-40° to the end face direction of the light-emitting surface.

[0055] This embodiment does not add an anti-reflection film to the light-emitting surface, avoiding the complexity of the anti-reflection film process and the difficulty of matching the refractive index of the film layer with the substrate. The light beam emission efficiency and directionality are directly improved through the inclined surface, which not only reduces manufacturing costs but also reduces the optical performance degradation caused by aging or peeling of the anti-reflection film, thereby significantly improving the stability and long-term reliability of the device.

[0056] The 5°-40° bevel light-emitting end design described in this embodiment, combined with the ridge waveguide structure described in the fourth embodiment, solves the problems of large multimode diffusion of light beams, high speckle noise, and poor directivity in existing waveguide structures.

[0057] The specific technical means further described in the above embodiments 2 to 14 can also be reasonably combined with each other to form new embodiments.

[0058] Implementation Method 15 like Figure 2 As shown, a method for manufacturing a GaN-based blue-green SLD based on a quantum dot structure, the method comprising: S1. Providing a substrate 1, and growing a buffer layer 2 with a thickness of 4-6 μm on top of the substrate 1 at a growth temperature of 1060° C. and a growth rate of 2.5 μm / h; S2, at a growth temperature of 1060°C, a growth rate of 1.5 μm / h, an Al composition of 17%–74%, Si doping introduced by silane, and a carrier concentration of 1×10¹ 6 –1×10¹ 9 Under the condition of cm⁻³, a lower optical confinement layer 3 with a thickness of 0.5–1 μm is grown on top of the buffer layer 2; S3, at a growth temperature of 900°C, a growth rate of 2 μm / h, an In composition of 5%–10%, Si doping introduced by silane, and a carrier concentration of 1×10¹ 7 –1×10¹ 9 Under the condition of cm⁻³, a lower barrier layer 4 with a thickness of 50–100 nm is grown on top of the lower optical confinement layer 3; S4, at a growth temperature of 700–800°C, a growth rate of 2 μm / h, an In composition of 15%–25%, and a carrier concentration of 1×10¹ 6 –1×10¹ 7 Under the condition of cm⁻³, a quantum dot light-emitting layer 5 with different diameters and a thickness of 2–50 nm is grown on top of the lower barrier layer 4; S5, at a growth temperature of 900°C, a growth rate of 2 μm / h, an In composition of 5%–10%, Mg doping introduced via Cp2Mg, and a carrier concentration of 1×10¹ 7 –1×10¹ 8 Under the condition of cm⁻³, a p-type upper barrier layer 6 with a thickness of 50–100 nm is grown on top of the quantum dot light-emitting layer 5; S6, at a growth temperature of 1060°C, a growth rate of 1.5 μm / h, an Al composition of 17%–74%, and a carrier concentration of 1×10¹ 7 –1×10¹ 8 Under the condition of cm⁻³, an upper optical confinement layer 7 with a thickness of 0.5–1 μm is grown on top of the upper barrier layer 6; S7, at a growth temperature of 1060°C, a growth rate of 1.5 μm / h, an Al composition of 17%–74%, and a carrier concentration of 1×10¹ 8 –1×10¹ 9 Under the condition of cm⁻³, an electrode contact layer 8 with a thickness of 0.1–0.2 μm is grown on top of the upper optical confinement layer 7; S8. Using photolithography combined with inductively coupled plasma etching technology, etching from the electrode contact layer 8 to the upper optical confinement layer 7 to form a ridge waveguide structure 11, wherein the ridge depth of the ridge waveguide structure 11 is 1-2 μm, and an SiO2 insulating layer 12 is deposited on the outside of the ridge waveguide structure 11 using an inductively coupled plasma chemical vapor deposition process; S9, depositing Ti / Al / Ni / Au on the top of the lower optical confinement layer 3 to form a lower electrode 9, wherein the lower electrode 9 is an n-type ohmic contact electrode; depositing Pd / Au on the electrode contact layer 8 to form an upper electrode 10, wherein the upper electrode 10 is a p-type ohmic contact electrode; S10, depositing a reflection-enhancing film composed of five layers of AlN and five layers of MgF2 stacked on the non-light-emitting surface of the nitride-based blue-green superluminescent diode by magnetron sputtering to obtain the nitride-based blue-green superluminescent diode.

[0059] This embodiment achieves consistent growth and optimized interface quality of multi-layer heterostructures by precisely controlling the epitaxial parameters of each layer, including temperature, rate, thickness, doping, etc., in sequence under MOCVD process conditions, and combining photolithography with ICP etching technology to form a ridge waveguide and subsequent SiO2 insulation and metal electrode deposition. It significantly improves the material uniformity and device repeatability of the quantum dot light-emitting area, and solves the problem of difficulty in balancing the consistency of multi-layer epitaxy in traditional processes, thereby ensuring the optoelectronic performance of the device and the stability of mass production.

[0060] Implementation Method 16 This embodiment is a further limitation of the fifteenth embodiment. Furthermore, the thickness of the SiO 2 insulating layer 12 deposited in S8 is 200-300 nm.

[0061] Based on Implementation Example 7, this implementation example strictly limits the thickness of the SiO2 insulating layer to 200-300nm. While ensuring electrical isolation and insulation protection of the ridge waveguide sidewalls, it avoids current leakage caused by an insulating layer that is too thin or optical loss caused by an insulating layer that is too thick, achieving an optimal balance between current isolation and optical waveguide protection, thereby improving the photoelectric conversion efficiency and stability of the device.

[0062] Implementation Method 17 This embodiment is a further limitation of the fifteenth embodiment. Furthermore, the ratio of depositing Ti / Al / Ni / Au to form the lower electrode 9 in S9 is Ti / Al / Ni / Au=20nm / 50nm / 20nm / 100nm; the ratio of depositing Pd / Au to form the upper electrode 10 is Pd / Au=20nm / 50nm.

[0063] Based on the fifteenth embodiment, this embodiment limits the thickness of the lower electrode Ti / Al / Ni / Au layer to 20nm / 50nm / 20nm / 100nm, and limits the thickness of the upper electrode Pd / Au layer to 20nm / 50nm, so that the electrode metal layer reaches the optimal state in terms of contact resistance, thermal expansion matching and interface mechanical properties, effectively reducing the risk of ohmic contact degradation and metal interdiffusion, thereby improving the electrical stability and service life of the device at high current density.

[0064] Implementation Method 18 This embodiment is a further limitation of the fifteenth embodiment. Furthermore, the thickness of the five layers of AlN and the five layers of MgF 2 in S10 is 50-100 nm per layer.

[0065] Based on the fifteenth embodiment, this embodiment limits the thickness of each layer of AlN and MgF2 in the anti-reflection film to 50-100nm, utilizes precise thickness control to form a multilayer interference structure within the target band, thereby achieving high reflectivity and broadband consistency characteristics, effectively reducing the impact of the thickness error between the anti-reflection film layers on the optical performance, thereby ensuring the device's efficient luminous output and stable super-radiant characteristics within a wide band.

[0066] Implementation Method 19 This embodiment integrates the technical solutions described in the aforementioned multiple embodiments, combines actual application scenarios and the use process of the computer program product that implements the method described in the present invention, and further verifies and explains the technical effects of the present invention through specific examples.

[0067] The purpose of the present invention is to propose a nitride-based superluminescent blue-green light-emitting diode (SLD). On the one hand, the nitride-based quantum dot light-emitting layer can improve the output power. On the other hand, the quantum dot light-emitting layer is grown at low temperature, and a wide spectrum output is achieved by adjusting the quantum dot size, thereby solving the problem that a wide spectrum and high output power are difficult to achieve simultaneously in SLD.

[0068] A nitride-based blue-green superluminescent diode, comprising: The substrate uses a non-polar c-axis oriented GaN substrate. In the absence of a polarization field, the electrons and holes in the QD fully overlap in space, significantly improving the radiative recombination efficiency and reducing the laser threshold current. At the same time, the emission wavelength is more stable, avoiding wavelength drift caused by the polarization field, which is conducive to high-precision wavelength control. By metal organic chemical vapor deposition (MOCVD), epitaxial growth is sequentially formed on the substrate along the growth direction: The GaN buffer layer is used as a transition layer deposited between the substrate and the epitaxial layer. Its core function is to adjust the physical and chemical differences between the substrate and the epitaxial material, improving the quality of the epitaxial layer and device performance; The n-type Si-doped AlGaN lower optical confinement layer utilizes the principle of total internal reflection of light at the interface of media with different refractive indices. When light is emitted from a medium with a high refractive index to a medium with a low refractive index, at a certain angle, the light will be completely reflected back to the medium with a high refractive index, thereby being confined to the high refractive index region and providing efficient electron injection into the light-emitting layer. The InGaN lower barrier layer with a gradient In composition, a high In composition, and an In content of 30-40%, is used to prevent electrons from diffusing from the active layer to the non-radiative region; The InGaN quantum dot light-emitting layer has a low In content, with an In content of 15-25%. It is used to realize the core area of ​​light amplification and laser emission. Its material properties and structural design directly determine the device's emission wavelength, efficiency, power, and stability. InGaN upper barrier layer with graded In composition; The optical confinement layer on the p-type Mg-doped AlGaN is used to prevent holes from diffusing from the active layer to the non-radiative region; p-type Mg heavily doped AlGaN electrode contact layer, a key structure for achieving low-resistance ohmic contact and efficient current injection; The nitride-based blue-green superluminescent diode also includes a ridge waveguide structure, which is achieved through photolithography combined with inductively coupled plasma etching (ICP). A SiO2 insulating layer is deposited on the epitaxial wafer, the SiO2 is etched after photolithography, and then the ridge structure is etched using ICP. The ridge structure has a depth of 1-2 μm and is primarily formed in the upper optical confinement layer.

[0069] An inductively coupled plasma chemical vapor deposition (ICPCVD) process is used to evaporate a 200-300 nm thick SiO2 insulating layer in the area outside the ridge waveguide structure to prevent leakage in the area other than the ridge injection current.

[0070] The non-light-emitting surface of the nitride-based blue-green superluminescent diode is provided with an anti-reflection film. The anti-reflection film is an AlN / MgF2 stacked structure with a reflectivity greater than 95%. The light is reflected toward the front face through the high-reflection film. At this time, the light undergoes amplification, thereby being output at high power on the light-emitting surface.

[0071] The light-emitting surface of the nitride-based blue-green superluminescent diode is not provided with an antireflection film, and a bevel design is adopted. The waveguide direction of the diode is inclined at an angle of 5°-40° with the light-emitting end face direction to reduce oscillation.

[0072] The nitride-based blue-green superluminescent diode further includes a lower electrode which is an n-electrode Ti / Al / Ni / Au, and an upper electrode which is a p-electrode Pd / Au.

[0073] The nitride-based blue-green superluminescent diodes described herein achieve high power output and a broad spectrum by regulating the growth time and temperature conditions during the quantum dot growth process. Varying the growth time can alter the size of the grown quantum dots, allowing the emission wavelength of the superluminescent diode to be controlled. Furthermore, the electrons and holes in the quantum dot structure are strictly confined in three dimensions, making it easier for carriers to reach the population inversion condition required for the lasing threshold. Compared to quantum dots, quantum wells have a stepped density of states, requiring a higher carrier concentration for lasing. The discrete energy level structure of quantum dots effectively suppresses Auger recombination and hot carrier scattering, thereby reducing the threshold current density and improving energy conversion efficiency. The discrete energy level structure of quantum dots effectively suppresses hot carrier scattering, accelerating the carrier relaxation process and reducing the carrier capture time, thereby supporting higher modulation frequencies. The direct modulation bandwidth of quantum dot SLDs can exceed 40 GHz, making them suitable for high-speed optical communication systems. Furthermore, low-temperature growth, compared to high-temperature growth above 800°C, helps suppress In precipitation. In addition, low-temperature growth is beneficial to improving the non-uniformity of quantum dot size and helping to broaden the peak; it is also beneficial to introduce carbon doping into the quantum dot structure, and introducing defect energy level emission into the InGaN energy level is beneficial to broadening the emission spectrum.

[0074] Furthermore, a multi-layer superluminescent diode structure is epitaxially grown on a non-polar gallium nitride substrate, and a ridge waveguide structure is prepared through device-related micro-nano processing, lithography and etching techniques, and then the substrate n-type and p-type electrodes are formed through electrode deposition technology.

[0075] like Figure 2 As shown, the structure of the nitride-based blue-green superluminescent diode described in the present invention is mainly formed by a metal organic chemical vapor deposition (MOCVD) epitaxial system: Reaction chamber: Figure 2 In the center is a cylindrical chamber that represents where the reaction takes place.

[0076] Graphite tray: Inside the reaction chamber, there is a black disk labeled "Graphite tray." It is used to place the substrate. The red arrow below the tray indicates its rotation direction.

[0077] Heating wire: There is a circle of red wire under the graphite tray, marked as "heating wire". It is used to heat the tray and the substrate on it.

[0078] Metal organic source: At the bottom left of the reaction chamber, there is a black bottle connected to the top of the reaction chamber through a pipe, labeled "metal organic source". It is used to provide the source of organic precursors that make up the thin film.

[0079] Carrier gas: Above the organic source, there is an arrow pointing to the reaction chamber, labeled "Carrier gas." It is used to transport the vapor of metal organic compounds to the reaction chamber.

[0080] Dopant source gas: In the upper right corner of the reaction chamber, there is a blue gas cylinder connected to the top of the reaction chamber through a pipe, marked with "Gas source". It is used to provide the source of other reaction gases.

[0081] Exhaust port: On the right side of the reaction chamber, there is an arrow pointing to the outside, marked "Exhaust source". It is used to discharge the exhaust gas generated during the reaction process.

[0082] The reactants are metal organics (Organic source) including trimethyl gallium (TMGa), trimethyl aluminum (TMAl), trimethyl indium (TMIn) and ammonia (NH3); The doping source gas (Gas source) includes silane (SiH4) or bismethylcyclopentadienylmagnesium (Cp2Mg); Carrier gas options include hydrogen (H2) or nitrogen (N2); Carrier gas flow rate is about 100-1000 sccm; 10-200 sccm of metal organic and 10-200 sccm of dopant source gas are carried into the reaction chamber, and the reaction chamber is heated to about 700°C-1060°C.

[0083] In a specific embodiment, the SLD of the present invention comprises, from bottom to top, a non-polar c-axis oriented GaN substrate 1, a GaN buffer layer 2, an n-type Si-doped AlGaN lower optical confinement layer 3, an InGaN lower barrier layer 4 with a gradient In composition (the In content gradually decreases by 40%-30% from bottom to top), an InGaN quantum dot light-emitting layer 5 (the In content can be tuned between 15% and 25% to meet the requirements of different blue-green emission bands), an InGaN upper barrier layer 6 with a gradient In composition (the In content gradually decreases by 30%-40% from bottom to top), a p-type Mg-doped AlGaN upper optical confinement layer 7, and a p-type Mg-heavily doped AlGaN electrode contact layer 8. The detailed growth process is as follows: Grow a 4-6 μm GaN buffer layer at 1060°C and a growth rate of 25 μm / h. Grow a 0.5-1 μm n-AlGaN lower optical confinement layer at a temperature of 1060°C and a growth rate of 15 μm / h; the Al composition ratio is 17%-74%, and the carrier concentration of the n-AlGaN after Si doping with silane is between 1016 cm-3 and 1019 cm-3; Grow a 50-100nm n-type InGaN optical waveguide layer with a graded In composition at 900°C and a growth rate of 2μm / h. The In composition ratio is 5%-10%. After Si doping is introduced via silane, the carrier concentration of the n-InGaN is between 1017cm-3 and 1019cm-3. Grow InGaN quantum dot light-emitting layers with diameters of 2-50nm at a temperature of 700-800°C and a growth rate of 2μm / h; the In component ratio is 15%-25%, and the carrier concentration is 1016cm-3-1017cm-3; Grow a 50-100nm p-type InGaN optical waveguide layer with a graded In composition at 900°C and a growth rate of 2μm / h. The In composition ratio is 5%-10%. After introducing Mg doping via Cp2Mg, the carrier concentration of the p-InGaN is between 1017cm-3 and 1018cm-3. Grow a 0.5-1 μm p-AlGaN lower optical confinement layer at a growth temperature of 1060°C and a growth rate of 15 μm / h; the Al composition ratio is 17%-74%, and the carrier concentration of the p-AlGaN after Mg doping introduced by Cp2Mg is 1017cm-3-1018cm-3; Grow a 0.1-0.2 μm p+-AlGaN electrode contact layer at a growth temperature of 1060°C and a growth rate of 15 μm / h; the Al component ratio is 17%-74%, and the carrier concentration of the p-AlGaN after Mg doping introduced by Cp2Mg is 1018cm-3-1019cm-3; The device structure uses a combination of photolithography and etching processes to etch the epitaxial layer from the p+-AlGaN electrode contact layer to the p-type InGaN optical waveguide layer with a gradient In composition, forming a ridge waveguide structure. A Pd (20nm) / Au (50nm) electrode is deposited on the p+-AlGaN electrode contact layer to form the p-type ohmic contact electrode. Subsequently, a 200-300nm thick SiO2 insulating layer is deposited around the periphery of the ridge waveguide structure using ICPCVD. Similarly, a Ti (20nm) / Al (50nm) / Ni (20nm) / Au (100nm) electrode is deposited on the n-AlGaN lower optical confinement layer to form the n-type ohmic contact electrode.

[0084] On the non-light-emitting surface, an anti-reflection film consisting of a stack of 5 layers of AlN (single layer thickness 50-100nm) and 5 layers of MgF2 (single layer thickness 50-100nm) is deposited by magnetron sputtering.

[0085] Finally, the SLD described in the present invention is obtained.

[0086] The present invention aims to solve key problems existing in existing blue-green superluminescent diodes (SLDs), such as limited luminescence spectrum width, low quantum efficiency, poor device directionality and insufficient thermal stability, and provides a GaN-based blue-green SLD with a quantum dot structure and a manufacturing method thereof.

[0087] Unlike existing SLD devices that use a quantum well structure as the light-emitting layer, the present invention uses an InGaN quantum dot light-emitting layer as the active region. Due to their three-dimensional carrier confinement properties, quantum dots can effectively improve radiative recombination efficiency. By adjusting their size and In composition, the emission wavelength can be precisely tuned, expanding the luminescence spectrum to meet the needs of broadband, high-speed optical communications. To further control the quality of quantum dot formation and alleviate interfacial stress accumulation, the present invention introduces InGaN upper and lower barrier layers with a gradient In composition above and below the quantum dot layer. By gradually regulating the growth stress and carrier distribution, the device's luminous efficiency and wavelength consistency are significantly improved.

[0088] The present invention uses metal-organic chemical vapor deposition (MOCVD) to sequentially epitaxially form the following structure on a nonpolar c-axis-oriented GaN substrate: a GaN buffer layer, an n-type Si-doped AlGaN lower optical confinement layer, an n-type InGaN lower barrier layer with a graded In composition, an InGaN quantum dot light-emitting layer, a p-type InGaN upper barrier layer with a graded In composition, a p-type Mg-doped AlGaN upper optical confinement layer, and a p-type Mg-heavily doped AlGaN electrode contact layer. This structure ensures excellent stress matching, carrier injection uniformity, and high-temperature growth compatibility.

[0089] To improve the output beam directionality and light extraction efficiency, the present invention fabricates a ridge waveguide structure 11 on the p-type electrode contact layer and etches it into the upper optical confinement layer. A SiO2 insulating layer is formed on both sides of the waveguide using a plasma chemical vapor deposition process, achieving spatial mode control of the beam and reducing speckle noise. Furthermore, to enhance light extraction efficiency and end-face beam shaping, a beveled light-emission design is employed, with the angle between the waveguide direction and the end face controlled between 5° and 40°. A multilayer AlN / MgF2 anti-reflection coating is deposited on the non-light-exiting surface of the device to enhance the overall light output.

[0090] The present invention also optimizes the metal electrode structure: Ti / Al / Ni / Au multilayer metal is used on the n-side to achieve low-resistance n-type ohmic contact, and Pd / Au metal is used on the p-side to ensure high-stability ohmic contact, meeting high current density driving requirements and improving the device's electro-optical conversion efficiency. The technical solution provided by the present invention is further described in detail through the above specific embodiments in order to highlight the advantages and benefits of the technical solution provided by the present invention. However, the above specific embodiments are not intended to limit the present invention. Any reasonable modification and improvement of the present invention, combination of embodiments and equivalent replacement, etc. based on the spirit and principles of the present invention should be included in the scope of protection of the present invention.

[0091] Those skilled in the art will understand that the above description is only a preferred embodiment of the present invention, and the various embodiments disclosed in the present invention and / or the features described in the claims can be combined or coupled in various ways, even if such combinations or couplings are not explicitly described in the disclosure of the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments, or make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

[0092] Although preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they are aware of the basic inventive concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention. Obviously, those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, the present invention is intended to include such changes and modifications as fall within the scope of the claims and their equivalents.

Claims

1. A GaN-based blue-green SLD based on a quantum dot structure, characterized in that: The nitride-based blue-green superluminescent diode comprises, from bottom to top, a substrate (1), a buffer layer (2), a lower optical confinement layer (3), a lower barrier layer (4), a quantum dot light-emitting layer (5), an upper barrier layer (6), an upper optical confinement layer (7), and an electrode contact layer (8).

2. The nitride-based blue-green superluminescent diode according to claim 1, characterized in that: The nitride-based blue-green superluminescent diode further comprises a lower electrode (9) and an upper electrode (10), wherein the lower electrode (9) is arranged on the lower optical confinement layer (3), and the upper electrode (10) is arranged on the electrode contact layer (8).

3. The nitride-based blue-green superluminescent diode according to claim 1, characterized in that: The nitride-based blue-green superluminescent diode further comprises a ridge waveguide structure (11), wherein the ridge waveguide structure (11) is etched from the electrode contact layer (8) into the upper optical confinement layer (7).

4. The nitride-based blue-green superluminescent diode according to claim 3, characterized in that: The nitride-based blue-green superluminescent diode further includes a SiO2 insulating layer (12), and the SiO2 insulating layer (12) covers the outside of the ridge waveguide structure (11).

5. The nitride-based blue-green superluminescent diode according to claim 1, characterized in that: A reflection-enhancing film is provided on the non-light-emitting surface of the nitride-based blue-green superluminescent diode.

6. The nitride-based blue-green superluminescent diode according to claim 1 or 3, characterized in that: The light-emitting surface of the nitride-based blue-green superluminescent diode adopts an inclined surface design, and the inclination angle between the waveguide direction of the nitride-based blue-green superluminescent diode and the end face direction of the light-emitting surface is 5°-40°.

7. A method for manufacturing a GaN-based blue-green SLD based on a quantum dot structure, characterized in that: The method comprises: Providing a substrate (1), and growing a buffer layer (2) with a thickness of 4-6 μm on top of the substrate (1) at a growth temperature of 1060° C. and a growth rate of 2.5 μm / h; At a growth temperature of 1060°C, a growth rate of 1.5 μm / h, an Al composition of 17%–74%, Si doping via silane, and a carrier concentration of 1×10¹ 6 –1×10¹ 9 Under the condition of cm⁻³, a lower optical confinement layer (3) with a thickness of 0.5–1 μm is grown on top of the buffer layer (2); At a growth temperature of 900°C, a growth rate of 2 μm / h, an In composition of 5%–10%, Si doping was introduced by silane, and the carrier concentration was 1×10¹ 7 –1×10¹ 9 Under the condition of cm⁻³, a lower barrier layer (4) with a thickness of 50–100 nm is grown on top of the lower optical confinement layer (3); At a growth temperature of 700–800°C, a growth rate of 2 μm / h, an In composition of 15%–25%, and a carrier concentration of 1×10¹ 6 –1×10¹ 7 Under the condition of cm⁻³, a quantum dot light-emitting layer (5) with different diameters and a thickness of 2–50 nm is grown on the top of the lower barrier layer (4); At a growth temperature of 900°C, a growth rate of 2 μm / h, an In composition of 5%–10%, Mg doping was introduced via Cp2Mg, and the carrier concentration was 1×10¹ 7 –1×10¹ 8 Under the condition of cm⁻³, a p-type upper barrier layer (6) with a thickness of 50–100 nm is grown on the top of the quantum dot light-emitting layer (5); At a growth temperature of 1060°C, a growth rate of 1.5 μm / h, an Al composition of 17%–74%, and a carrier concentration of 1×10¹ 7 –1×10¹ 8 Under the condition of cm⁻³, an upper optical confinement layer (7) with a thickness of 0.5–1 μm is grown on top of the upper barrier layer (6); At a growth temperature of 1060°C, a growth rate of 1.5 μm / h, an Al composition of 17%–74%, and a carrier concentration of 1×10¹ 8 –1×10¹ 9 Under the condition of cm⁻³, an electrode contact layer (8) with a thickness of 0.1–0.2 μm is grown on top of the upper optical confinement layer (7); Using photolithography combined with inductively coupled plasma etching technology, etching from the electrode contact layer (8) to the upper optical confinement layer (7) to form a ridge waveguide structure (11), wherein the ridge depth of the ridge waveguide structure (11) is 1-2 μm, and an SiO2 insulating layer (12) is deposited outside the ridge waveguide structure (11) using an inductively coupled plasma chemical vapor deposition process; Depositing Ti / Al / Ni / Au on the top of the lower optical confinement layer (3) to form a lower electrode (9), wherein the lower electrode (9) is an n-type ohmic contact electrode; depositing Pd / Au on the electrode contact layer (8) to form an upper electrode (10), wherein the upper electrode (10) is a p-type ohmic contact electrode; A reflection-enhancing film composed of five layers of AlN and five layers of MgF2 is deposited on the non-light-emitting surface of the nitride-based blue-green superluminescent diode by magnetron sputtering to obtain the nitride-based blue-green superluminescent diode.

8. The manufacturing method according to claim 7, characterized in that The thickness of the SiO2 insulating layer (12) deposited in S8 is 200-300 nm.

9. The manufacturing method according to claim 7, characterized in that: The ratio of Ti / Al / Ni / Au deposited in S9 to form the lower electrode (9) is The ratio of depositing Pd / Au to form the upper electrode (10) is .

10. The manufacturing method according to claim 7, characterized in that: The thickness of the 5 layers of AlN and 5 layers of MgF2 in S10 is 50-100 nm.

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