Micro-LED display chip and preparation method

Abstract

The embodiment of the invention discloses a Micro-LED display chip and a preparation method. The Micro-LED display chip comprises a driving panel, a plurality of LED units, a wavelength conversion layer, a lens unit and a plurality of light condensation layers. According to the Micro-LED display chip provided by the embodiment of the invention, the coverage area of the lens unit can be increased by arranging the at least two overlapped light condensation layers on the lens unit, and the lens unit can fully cover the whole pixel region of the Micro-LED display chip, so that the light condensation effect is improved. According to the utility model, more or all light rays are projected through the lens unit, and tiny light rays are collected and focused to a specific area, so that the brightness and definition of pixels are improved; meanwhile, the lens units can better adjust the angle and distribution of light rays, the color uniformity between pixels is improved, and a display picture is brighter and more vivid. Therefore, the contrast ratio of the Micro-LED display chip is improved, the glare and halo effects are reduced, and the Micro-LED display chip can provide clearer and more vivid visual experience.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to the technical field of display technology, and in particular, to a Micro-LED display chip and a preparation method. BACKGROUND

[0002] A Micro-LED display chip is a two-dimensional array Micro-LED display chip integrating a high-density array of pixel light-emitting units on a single chip. The Micro-LED display chip is widely used in the fields of augmented reality (AR), near-eye display (NED), wearable display, and the like, due to its small size, long service life, fast response speed, and low power consumption.

[0003] Although the full-color display of the Micro-LED display chip can be realized by wavelength conversion of excitation light emitted by the Micro-LED element through a wavelength conversion element to obtain excitation light of different wavelengths, the light collection layer of the Micro-LED display chip in the prior art has a small coverage area of the wavelength conversion layer, which is difficult to cover comprehensively, thereby affecting the display quality of the Micro-LED display chip. SUMMARY

[0004] The present application aims to at least solve one of the problems in the prior art or related art.

[0005] To this end, a first aspect of the present application provides a Micro-LED display chip.

[0006] A second aspect of the present application provides a display device.

[0007] A third aspect of the present application provides a preparation method.

[0008] Therefore, according to a first aspect of embodiments of the present application, a Micro-LED display chip is provided, comprising:

[0009] a driving panel;

[0010] a plurality of LED units arranged on the driving panel;

[0011] a wavelength conversion layer arranged above the LED units, comprising a plurality of wavelength conversion units;

[0012] a lens unit covering the corresponding wavelength conversion unit;

[0013] At least two light collection layers are arranged on the lens unit.

[0014] In an embodiment, the plurality of stacked light-concentrating layers are divided into a plurality of groups, each group comprising two stacked light-concentrating layers, and in each group, the light-concentrating layer with higher refractive index is arranged closer to the wavelength conversion layer.

[0015] In an embodiment, the thickness of each light-concentrating layer is determined based on the wavelength of the incident light and the refractive index of the light-concentrating layer.

[0016] In an embodiment, the thickness of each light-concentrating layer is determined by the following relationship:

[0017] d x = λ x / 4n x

[0018] wherein d x is the thickness of the light-concentrating layer, λ x is the wavelength of the light converted by the wavelength conversion layer, and n x is the refractive index of the light-concentrating layer.

[0019] The adjacent lens unit and light-concentrating layer satisfy the following relationship:

[0020]

[0021] wherein n0 is the refractive index of the lens unit, n1 is the refractive index of the first light-concentrating layer arranged on the lens unit, n2 is the refractive index of the second light-concentrating layer arranged on the first light-concentrating layer, and n3 is the refractive index of the third light-concentrating layer arranged on the second light-concentrating layer.

[0022] In an embodiment, the refractive index of at least two stacked light-concentrating layers decreases in the direction from the LED unit to the wavelength conversion layer.

[0023] wherein the adjacent two light-concentrating layers satisfy the following relationship:

[0024] n 入 sinθ 入 = n 出 sinθ 出

[0025] wherein n 入 is the refractive index of the light-concentrating layer in front of the incident interface, θ 入 is the incident angle, n 出 is the refractive index of the light-concentrating layer behind the incident interface, and θ 出 is the exit angle.

[0026] wherein the focal length of the whole of the lens unit and the plurality of stacked light-concentrating layers is determined based on the refractive index and the radius of curvature of the whole of the lens unit and the plurality of stacked light-concentrating layers.

[0027] The focal length of the whole of the light collecting layer and the lens unit is determined based on the following formula:

[0028]

[0029] wherein f is the focal length of the whole of the light collecting layer and the lens unit, n 入 is the refractive index of the entrance interface of the whole of the light collecting layer and the lens unit, n 出 is the refractive index of the exit interface of the whole of the light collecting layer and the lens unit, and r is the radius of curvature.

[0030] In a possible implementation, the focal length of the whole of the light collecting layer and the lens unit is 0.5 to 10 μm.

[0031] In a possible implementation, the Micro-LED display chip further comprises:

[0032] a grid structure having a plurality of grid holes, the grid structure being arranged on the driving panel, each LED unit corresponding to a grid hole, and the wavelength conversion unit being arranged in the corresponding grid hole.

[0033] In a possible implementation, the grid structure comprises:

[0034] a reflective layer covering at least the sidewall of the grid hole.

[0035] In a possible implementation, the plurality of wavelength conversion units comprises:

[0036] a plurality of first wavelength conversion units for converting the first color light into second color light.

[0037] a plurality of second wavelength conversion units for converting the first color light into third color light.

[0038] In a possible implementation, the plurality of wavelength conversion units further comprises:

[0039] a plurality of third wavelength conversion units for converting the first color light into fourth color light; and / or

[0040] a light transmission layer comprising a plurality of light transmission units, the light transmission units being arranged on part of the LED units, and the first color light emitted by the LED units being transmitted via the light transmission units.

[0041] According to a second aspect of the present application, a display device is provided, comprising:

[0042] The Micro-LED display chip is prepared according to any one of the technical solutions.

[0043] According to a third aspect of the present application, a preparation method of a Micro-LED display chip is provided, comprising:

[0044] providing a driving panel;

[0045] forming a plurality of LED units on the driving panel;

[0046] forming a wavelength conversion layer above the plurality of LED units, the wavelength conversion layer comprising a plurality of wavelength conversion units;

[0047] forming a lens unit on the wavelength conversion layer;

[0048] disposing at least two stacked light-concentrating layers on the lens unit.

[0049] In a feasible implementation, the step of disposing at least two stacked light-concentrating layers on the lens unit comprises:

[0050] sequentially disposing the stacked light-concentrating layers on the lens unit by spraying and / or deposition process.

[0051] In a feasible implementation, the step of forming a lens unit on the wavelength conversion layer comprises:

[0052] depositing a light-concentrating material on the wavelength conversion layer;

[0053] forming a lens unit on the wavelength conversion layer by reflow soldering process.

[0054] In a feasible implementation, the step of forming a wavelength conversion layer above the plurality of LED units, the wavelength conversion layer comprising a plurality of wavelength conversion units comprises:

[0055] forming a grid structure on the side of the LED unit;

[0056] disposing the wavelength conversion layer in the grid hole; or

[0057] transferring the lens unit by molding.

[0058] In a feasible implementation, the thickness of each light-concentrating layer is determined based on the wavelength of incident light and the refractive index of the light-concentrating layer.

[0059] wherein the thickness of each light-concentrating layer is determined by the following relationship:

[0060] d x = λ x / 4n x

[0061] wherein d x is the thickness of the light collecting layer, λ x is the wavelength of the light converted by the wavelength conversion layer, n x is the refractive index of the light collecting layer;

[0062] wherein the adjacent lens unit and light collecting layer satisfy the following relationship:

[0063]

[0064] wherein n0 is the refractive index of the lens unit, n1 is the refractive index of the first light collecting layer disposed on the lens unit, n2 is the refractive index of the second light collecting layer disposed on the first light collecting layer; n3 is the refractive index of the third light collecting layer disposed on the second light collecting layer.

[0065] In one possible implementation, the refractive index of at least two of the stacked light collecting layers decreases in the direction from the LED unit to the wavelength conversion layer;

[0066] wherein the adjacent two light collecting layers satisfy the following relationship:

[0067] n 入 sinθ 入 = n 出 sinθ 出

[0068] wherein n 入 is the refractive index of the light collecting layer in front of the incident interface, θ 入 is the incident angle, n 出 is the refractive index of the light collecting layer behind the incident interface, θ 出 is the exit angle;

[0069] wherein the focal length of the whole of the lens unit and the light collecting layers is determined based on the refractive index and the radius of curvature of the whole of the lens unit and the light collecting layers;

[0070] wherein the focal length of the whole of the lens unit and the light collecting layers is determined based on the following formula:

[0071]

[0072] wherein f is the focal length of the whole of the lens unit and the light collecting layers, n 入 is the refractive index of the incident interface of the whole of the lens unit and the light collecting layers, n 出 is the refractive index of the exit interface of the whole of the lens unit and the light collecting layers, and r is the radius of curvature.

[0073] Compared with the prior art, the present application has at least the following beneficial effects:

[0074] The Micro-LED display chip provided by the embodiment of the present application comprises a driving panel, a plurality of LED units, a wavelength conversion layer, a lens unit and at least two light collecting layers. Based on this, in the use process, the driving panel drives the LED units to emit light, the light emitted by the LED units is converted by the wavelength conversion layer and then transmitted through the lens unit and the at least two light collecting layers for display. The light emitted by the LED units can be collected through the setting of the at least two light collecting layers, and the display effect can be further improved. Further, the lens unit is provided with at least two stacked light collecting layers, based on which the coverage area of the lens unit can be increased, and the lens unit can fully cover the entire pixel area of the Micro-LED display chip, thereby improving the light collecting effect. More or all light rays are projected through the lens unit, the tiny light rays are collected and focused to a specific area, thereby improving the brightness and clarity of the pixels; at the same time, the lens unit can better adjust the angle and distribution of the light rays, thereby improving the color uniformity between the pixels, making the display picture more vivid and realistic. The contrast of the Micro-LED display chip is improved, the glare and halo effect are reduced, and thus the Micro-LED display chip can provide a clearer and more realistic visual experience. BRIEF DESCRIPTION OF DRAWINGS

[0075] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The detailed description is made with reference to the accompanying drawings.

[0076] Figure 1 a schematic structural diagram of a Micro-LED display chip provided by an embodiment of the present application;

[0077] Figure 2 a schematic structural diagram of a light emitting path of a Micro-LED display chip provided by an embodiment of the present application;

[0078] Figure 3 a schematic structural diagram of a display device provided by an embodiment of the present application;

[0079] Figure 4 a schematic step flow chart of a preparation method of a Micro-LED display chip provided by an embodiment of the present application;

[0080] Figure 5 a schematic structural diagram of a Micro-LED display chip after the first step of a preparation method provided by an embodiment of the present application is executed;

[0081] Figure 6A schematic structural view of a Micro-LED display chip provided by an embodiment of the present application after execution of a second step of a preparation method of the Micro-LED display chip;

[0082] Figure 7 A schematic structural view of a Micro-LED display chip provided by an embodiment of the present application after execution of a third step of a preparation method of the Micro-LED display chip;

[0083] Figure 8 A schematic structural view of a Micro-LED display chip provided by an embodiment of the present application after execution of a fifth step of a preparation method of the Micro-LED display chip;

[0084] Figure 9 A schematic structural view of a Micro-LED display chip provided by an embodiment of the present application after execution of a sixth step of a preparation method of the Micro-LED display chip;

[0085] Figure 10 A schematic structural view of a Micro-LED display chip provided by an embodiment of the present application after execution of a seventh step of a preparation method of the Micro-LED display chip;

[0086] Figure 11 A schematic structural view of a Micro-LED display chip provided by another embodiment of the present application after execution of a first step of a preparation method of the Micro-LED display chip.

[0087] In the figure, the correspondence between the reference signs and the component names is as follows:

[0088] 1000 Micro-LED display chip;

[0089] 110 driving panel, 120 LED unit, 130 wavelength conversion layer, 150 lattice structure, 160 first electrode layer, 170 second electrode layer, 180 passivation layer, 190 lens unit;

[0090] 111 first electrode contact, 112 second electrode contact;

[0091] 121 first semiconductor layer, 122 light-emitting layer, 123 second semiconductor layer;

[0092] 131 first wavelength conversion unit, 132 second wavelength conversion unit, 133 third wavelength conversion unit;

[0093] 141 light-concentrating layer, 1411 first light-concentrating layer, 1412 second light-concentrating layer, 1413 third light-concentrating layer;

[0094] 151 lattice hole, 152 support body, 153 reflecting layer;

[0095] 200 display device, 2100 encapsulation layer. DETAILED DESCRIPTION

[0096] In order to better understand the above technical solutions, the technical solutions of the embodiments of the present application are described in detail below through the drawings and specific embodiments. It should be understood that the specific features in the embodiments of the present application and the specific features in the embodiments are detailed descriptions of the technical solutions of the embodiments of the present application, but not limitations of the technical solutions of the present application. In the case of no conflict, the technical features in the embodiments of the present application and the embodiments can be combined with each other.

[0097] As shown in Figure 1 and Figure 2 , according to the first aspect of the embodiments of the present application, a Micro-LED display chip 1000 is provided, comprising: a driving panel 110; a plurality of LED units 120 arranged on the driving panel 110; a wavelength conversion layer 130 provided above the LED units 120, comprising a plurality of wavelength conversion units; a lens unit 190, the lens unit 190 covers the corresponding wavelength conversion layer 130; at least two light collecting layers 141, the at least two light collecting layers 141 are stacked and arranged on the lens unit 190; wherein the wavelength conversion layer 130 is arranged correspondingly with the LED units 120, and the lens unit 190 is arranged correspondingly with the wavelength conversion layer 130.

[0098] The Micro-LED display chip 1000 provided by the embodiments of the present application includes the driving panel 110, the plurality of LED units 120, the wavelength conversion layer 130, the lens unit 190 and the at least two light collecting layers 141. Based on this, in the use process, the driving panel 110 drives the LED units 120 to emit light, the light emitted by the LED units 120 is converted by the wavelength conversion layer 130 and then transmitted through the lens unit 190 for display. Through the arrangement of the lens unit 190, the light emitted by the LED units 120 can be collected, which can further improve the display effect. Further, the at least two stacked light collecting layers 141 are arranged above the lens unit 190, based on which the coverage area of the lens unit 190 can be increased, so that the lens unit 190 can fully cover the entire pixel area of the Micro-LED display chip 1000, thereby improving the light collecting effect. So that more or all light rays are projected through the lens unit 190, collect the tiny light rays and focus them to a specific area, thereby improving the brightness and clarity of the pixels; at the same time, the lens unit 190 can better adjust the angle and distribution of the light rays, thereby improving the color uniformity between the pixels, making the display picture more vivid and realistic. Further, the contrast of the Micro-LED display chip 1000 is improved, the glare and halo effect are reduced, thereby providing a clearer and more realistic visual experience for the Micro-LED display chip 1000.

[0099] It can be understood that two or more light condensation layers 141 can be arranged on the lens unit 190. Compared with the traditional single light condensation layer 141, the single light condensation layer 141 is difficult to cover the entire pixel area in the single lens preparation process due to the influence of process characteristics and material light emission requirements. The Micro-LED display chip 1000 provided in the embodiment of the present application includes at least two stacked light condensation layers 141. Based on this, the lens unit 190 can have a larger coverage area by arranging more light condensation layers 141, thereby covering the entire pixel area.

[0100] It can be understood that the wavelength conversion layer 130 is arranged corresponding to the LED unit 120, and the lens unit 190 is arranged corresponding to the wavelength conversion layer 130, which facilitates the wavelength conversion layer 130 to convert the color of the light emitted by the LED unit 120, and facilitates the lens unit 190 to condense the light emitted by the LED unit 120. It can be understood that the wavelength conversion layer 130 is arranged corresponding to the LED unit 120, and the lens unit 190 is arranged corresponding to the wavelength conversion layer 130, which means that the wavelength conversion layer 130 and the lens unit 190 can be arranged in sequence on the light emission path of the LED unit 120.

[0101] In a feasible implementation, the refractive indexes of different light condensation layers 141 are different.

[0102] In this technical solution, considering that the arrangement of at least two light condensation layers 141 can not only increase the coverage area of the lens unit 190, but also can adjust the light emitted by the wavelength conversion layer 130 by arranging different light condensation layers 141. Based on this, the arrangement of light condensation layers 141 with different refractive indexes can make the lens unit 190 more accurate in adjusting the light path, can improve the light condensation effect of the lens unit 190, and can better adjust the angle and distribution of the light, thereby improving the color uniformity between pixels and making the display picture more vivid and realistic.

[0103] As shown in Figure 1 and Figure 2 In a feasible implementation, a plurality of stacked light condensation layers 141 are arranged on the lens unit 190. In this way, on the one hand, the coverage area of the lens unit 190 can be further increased to ensure the light condensation effect and make more light pass through the lens unit 190 for emission; on the other hand, the lens unit 190 can have more accurate adjustment effect.

[0104] In a feasible implementation, the refractive indexes of the at least two stacked light condensation layers 141 decrease in the direction from the LED unit 120 to the wavelength conversion layer 130.

[0105] As shown in Figure 1 and Figure 2 , whereinFigure 2 The arrow direction in the technical solution is the emission direction of the light, and in the technical solution, the refractive index relationship between the different light collecting layers 141 is further provided, and the refractive index of at least two stacked light collecting layers 141 decreases in the direction from the LED unit 120 to the wavelength conversion layer 130, that is, the refractive index of the light collecting layer 141 closer to the LED unit 120 is larger, and the refractive index of the light collecting layer 141 farther away from the LED unit 120 is smaller. Based on this, the light path direction of the light passing through the lens unit 190 can be better controlled, the effect of increasing the transmittance layer by layer can be realized, the light can be guided, and the light can be better focused. Combined with the characteristics of the small size of the Micro-LED display chip 1000, on the one hand, the lens unit 190 can better collect and concentrate light to ensure that the light forms clear and bright pixel points on the display screen; on the other hand, the scattering and loss of light in the propagation process can be reduced, thereby further improving the overall brightness and contrast of the display; on the other hand, it can be ensured that the light emitted by each sub-pixel can be accurately projected onto the display screen and will not interfere or mix with each other, and accurate and bright colors can be presented; on the other hand, the reflection loss of light on the surface of the lens unit 190 can be reduced, and the glare and halo effect can be reduced.

[0106] It can be understood that, in order to better control the light path, when the light collecting layer 141 is multi-layered, the refractive index of the multiple light collecting layers 141 decreases in the direction from the LED unit 120 to the wavelength conversion layer 130.

[0107] In a feasible implementation, the multiple stacked light collecting layers 141 are divided into multiple groups, each group including two stacked light collecting layers 141, and in the two light collecting layers 141 of each group, the one with a higher refractive index is arranged close to the wavelength conversion layer 130.

[0108] This technical solution further provides a relationship of refractive indices between different light-concentrating layers 141 when there are multiple stacked light-concentrating layers 141. The multiple stacked light-concentrating layers 141 can be divided into multiple groups, each group including two stacked light-concentrating layers 141. In each group, the light-concentrating layer 141 with the higher refractive index is positioned closer to the wavelength conversion layer 130. That is, in the direction from the LED unit 120 to the wavelength conversion layer 130, the refractive indices of the multiple light-concentrating layers 141 alternate between high-low-high-low-high-low. This arrangement increases the overall transmittance of the lens unit 190 and the multiple light-concentrating layers 141, reduces the reflectance, and minimizes light reflection. It allows light incident from different angles to pass through the lens unit 190 as much as possible, thereby improving light transmittance. Ultimately, this increases the brightness, contrast, and color accuracy of the Micro-LED display chip 1000.

[0109] In one feasible implementation, the thickness of each light-concentrating layer 141 is determined based on the incident light wavelength and the refractive index of the light-concentrating layer 141.

[0110] In this technical solution, a method for determining the thickness of each light-concentrating layer 141 is further provided. The thickness of each light-concentrating layer 141 is determined based on the incident light wavelength and the refractive index of the light-concentrating layer 141. Based on this, the thickness of the light-concentrating layer 141 can be correlated with its own material properties and usage scenarios, enabling the light-concentrating layer 141 to better control the light path and improve the light-concentrating effect. On the one hand, it reduces light scattering and internal absorption, thereby increasing light transmittance and making the display have higher brightness; on the other hand, it can ensure that the light is more concentrated after focusing, reducing the influence of stray light, thereby improving the contrast of the display.

[0111] In one feasible implementation, the thickness of each light-concentrating layer 141 is determined by the following relationship:

[0112] d x =λ x / 4n x

[0113] Where, d x λ is the thickness of the light-concentrating layer 141. x n represents the wavelength of the light converted by the wavelength conversion layer. x The refractive index of the light-concentrating layer 141;

[0114] Among them, such as Figure 2 As shown, adjacent lens units 190 and light-concentrating layers 141 satisfy the following relationship:

[0115]

[0116] wherein n0 is the refractive index of the lens unit 190, n1 is the refractive index of the first light condensing layer 1411 provided on the lens unit, n2 is the refractive index of the second light condensing layer 1412 provided on the first light condensing layer 1411, and n3 is the refractive index of the third light condensing layer 1413 provided on the second light condensing layer 1412.

[0117] In the technical solution, the relationship between the reflected light and the refracted light between the two adjacent light condensing layers 141 is further provided, and the light path can be controlled by adjusting the refractive indexes of the different light condensing layers 141 through the determination of the above relationship.

[0118] In the technical solution, the relationship between the four adjacent light condensing layers 141 is further provided when the light condensing layers 141 are multiple, and the destructive interference is generated by the reflection and transmission between the different refractive index material layers through the determination of the above relationship, so that part of the light is enhanced and another part of the light is weakened, the peak position in a specific waveband range of the light can be in the transmission range, the full transmittance of the specific wavelength can be achieved, the transmittance of the light in the waveband can be improved, and the full transmittance of the fixed waveband can be achieved. The Micro-LED display chip 1000 can be brighter, the color accuracy can be improved, the reflection can be reduced by reducing unnecessary reflected light, and thus the contrast of the display can be improved.

[0119] In the technical solution, the calculation method of the thickness of each light condensing layer 141 is further provided, the light path can be better controlled by the light condensing layer 141 through the determination of the above relationship, the light condensing effect can be better improved, on the one hand, the scattering and internal absorption of the light can be reduced, and thus the transmittance of the light is improved, so that the display has higher brightness; on the other hand, the light can be more concentrated after focusing, and the influence of stray light can be reduced, and thus the contrast of the display is improved. At the same time, the production process of each light condensing layer 141 can be clearly defined, the process difficulty is reduced, the Micro-LED display chip 1000 can be standardized, and consistency between different Micro-LED display chips 1000 is ensured.

[0120] In a feasible implementation, the refractive indexes of the at least two stacked light condensing layers 141 decrease in a direction from the LED unit 120 to the wavelength conversion layer 130, and the two adjacent light condensing layers 141 satisfy the following relationship:

[0121] n 入 sinθ 入 =n 出 sinθ 出

[0122] wherein n 入n is the refractive index of the light condensing layer 141 in front of the incident interface, and θ is the incident angle 入 n is the refractive index of the light condensing layer 141 in front of the incident interface, and θ is the incident angle 出 n is the refractive index of the light condensing layer 141 in front of the incident interface, and θ is the incident angle 出 n is the refractive index of the light condensing layer 141 in front of the incident interface, and θ is the incident angle

[0123] The focal length of the plurality of light condensing layers 141 and the lens unit 190 as a whole is determined based on the following formula:

[0124]

[0125] n is the refractive index of the light condensing layer 141 in front of the incident interface, and θ is the incident angle 入 n is the refractive index of the light condensing layer 141 in front of the incident interface, and θ is the incident angle 出 n is the refractive index of the light condensing layer 141 in front of the incident interface, and θ is the incident angle

[0126] In this technical solution, the relationship between the reflected light and the refracted light between the two adjacent light condensing layers 141 is further provided, and by determining the above relationship, the light path can be controlled by adjusting the refractive index of different light condensing layers 141, which is conducive to achieving collimation.

[0127] In this technical solution, the specific way of determining the focal length of the plurality of light condensing layers 141 and the lens unit 190 as a whole is further provided, and such arrangement enables the performance parameters and structural parameters of the plurality of light condensing layers 141 and the lens unit 190 as a whole to be calculated, which is conducive to setting the shape of the plurality of light condensing layers 141 and the lens unit 190 as a whole based on the focal length of the eye.

[0128] In a feasible implementation, the focal length of the plurality of light condensing layers 141 and the lens unit 190 as a whole is determined based on the refractive index and the curvature radius of the plurality of light condensing layers 141 and the lens unit 190 as a whole. Such arrangement is conducive to clearly defining the focal length parameters of the plurality of light condensing layers 141 and the lens unit 190 as a whole, and enables the focal length parameters of the plurality of light condensing layers 141 and the lens unit 190 as a whole to be adapted to the Micro-LED display chip 1000.

[0129] In a feasible implementation, the focal length of the plurality of light condensing layers 141 and the lens unit 190 as a whole is 0.5 to 10 μm.

[0130] In the technical solution, the focal length of the plurality of light condensation layers 141 and the lens unit 190 as a whole is 0.5 to 10 μm, so that the focal length of the plurality of light condensation layers 141 and the lens unit 190 as a whole can be adapted to the pixels of the Micro-LED display chip 1000, the Micro-LED display chip 1000 can resolve the pixels more clearly, the confusion between the pixels is reduced, optical distortion is avoided, and the displayed image is more clear.

[0131] As shown in Figure 1 and Figure 2 In a feasible implementation, the Micro-LED display chip 1000 further includes a grid structure 150 having a plurality of grid holes 151, the grid structure 150 is arranged on the driving panel 110, each LED unit 120 corresponds to a grid hole 151, and the wavelength conversion layer 130 is arranged in the corresponding grid hole 151.

[0132] In the technical solution, the Micro-LED display chip 1000 can further include a plurality of grid structures 150, the plurality of grid structures 150 enclose the LED units 120, and the grid hole 151 formed by the enclosure can be provided with the wavelength conversion layer 130, so that the fixing of the wavelength conversion layer 130 is more reliable.

[0133] It can be understood that the periphery of each LED unit 120 can be provided with a plurality of grid structures 150, and the plurality of grid structures 150 can enclose the grid hole 151 in the shape of a truncated pyramid or a circular truncated cone. The grid hole 151 only needs to be able to accommodate the material used to prepare the wavelength conversion layer 130, and the shape of the grid hole 151 is not limited in the present application.

[0134] It can be understood that the grid structure 150 can include a plurality of grid holes, and these holes are arranged around each LED unit 120. This design can effectively isolate and protect the LED units 120 from external environmental interference or damage. At the same time, the grid structure 150 can effectively block the side wall light leakage of the LED units 120. In the Micro-LED display chip, due to the high integration and close arrangement of the LED units 120, side wall light leakage can become a problem. The grid structure 150 can significantly reduce this light leakage phenomenon through its physical isolation effect, thereby improving the contrast and clarity of the display. Further, the grid structure 150 can also prevent light crosstalk between adjacent LED units 120. In the Micro-LED display chip, if the light emitted by adjacent LED units 120 interferes with each other, it can cause color distortion or uneven display. The grid structure 150 can effectively prevent this light crosstalk phenomenon from occurring through its physical isolation and blocking effect, thereby ensuring the accuracy and consistency of the display.

[0135] In some examples, multiple LED units 120 have a one-to-one correspondence of multiple LED mesa surfaces. Each LED unit 120 can be driven individually by a driver panel 110, and the multiple LED mesa surfaces can be in a trapezoidal structure. The sidewalls of the LED mesa surface can be inclined, and the angle between the sidewall and the top surface of the LED mesa surface can be an obtuse angle, thereby improving the light-gathering effect of the LED unit 120. It should be understood that the multiple LED mesa surfaces can also be in a columnar structure, in which case the angle between the sidewall and the top surface of the LED mesa surface is a right angle.

[0136] In some examples, in some embodiments, in order to improve the uniformity of light emission from the LED unit 120, the LED unit 120 can be positioned at the center of the grid structure 150, so that the light emitted by the LED unit 120 can pass through the grid holes of the grid structure 150 uniformly.

[0137] like Figure 1 and Figure 2 As shown, in one feasible embodiment, the grid structure 150 further includes: a reflective layer 153, which at least covers the sidewall of the grid hole 151; a support 152 and a reflective layer 153, which covers the support 152 or the sidewall of the grid hole.

[0138] In this technical solution, a grid structure 150 is further provided. The grid structure 150 may include a support 152 and a reflective layer 153 covering the support 152 or the grid holes. The support 152 effectively isolates and protects the LED units 120, preventing them from being interfered with or damaged by the external environment. Simultaneously, the support 152 effectively blocks light leakage from the sidewalls of the LED units 120. Through its physical isolation, the support 152 significantly reduces this light leakage, thereby improving the contrast and clarity of the display. Furthermore, the support 152 also prevents light crosstalk between adjacent LED units 120. Through its physical isolation and blocking effects, the support 152 effectively prevents this light crosstalk, thus ensuring the accuracy and consistency of the display.

[0139] In this technical solution, the grid structure 150, through the setting of the reflective layer 153, can reflect the light emitted by the LED unit 120, so that more light can be emitted toward the wavelength conversion layer 130, thereby improving the overall brightness of the Micro-LED microdisplay chip.

[0140] In one possible implementation, the support 152 is made of a resin material; and / or the reflective layer 153 is made of a similar material.

[0141] In the technical scheme, the support body 152 is made of resin material, which facilitates the preparation of the grid structure 150, and the reflective layer 153 is made of metal material, which improves the heat conduction effect.

[0142] As shown in Figure 1 and Figure 2 in an embodiment, the plurality of wavelength conversion units include: a plurality of first wavelength conversion units 131, the first wavelength conversion units 131 fill the corresponding grid holes 151, the LED units 120 emit first color light, and the first wavelength conversion units 131 convert the first color light into second color light.

[0143] In the technical scheme, the composition of the wavelength conversion layer 130 is further provided, and the wavelength conversion layer 130 can include a plurality of first wavelength conversion units 131. Through the arrangement of the first wavelength conversion units 131, the color conversion of the first color light emitted by the LED units 120 can be performed to obtain second color light. Through the combination of the second color light and the first color light, display can be performed.

[0144] It can be understood that the LED units 120 emit first color light, and the first color light includes but is not limited to any one of red light, green light, blue light, yellow light, or ultraviolet light.

[0145] As shown in Figure 1 and Figure 2 in an embodiment, the wavelength conversion layer 130 further includes: a plurality of second wavelength conversion units 132, the second wavelength conversion units 132 fill the corresponding grid holes 151, the LED units 120 emit first color light, and the second wavelength conversion units 132 convert the first color light into third color light.

[0146] In the technical scheme, the composition of the wavelength conversion layer 130 is further provided, and the wavelength conversion layer 130 can include a plurality of first wavelength conversion units 131. Through the arrangement of the first wavelength conversion units 131, the color conversion of the first color light emitted by the LED units 120 can be performed to obtain second color light. Through the combination of the second color light and the first color light, display can be performed.

[0147] As shown in Figure 1 and Figure 2As shown, in a possible implementation, the wavelength conversion layer 130 further includes: a plurality of third wavelength conversion units 133, the third wavelength conversion units 133 fill the corresponding grid holes 151, the LED units 120 emit first color light, and the third wavelength conversion units 133 convert the first color light into fourth color light.

[0148] In the technical solution, the wavelength conversion unit can further include the third wavelength conversion units 133, through the setting of the third wavelength conversion units 133, the first color light emitted by the LED units 120 can be converted into the fourth color light, and through the combination of the second color light, the third color light and the fourth color light, full-color display can be realized.

[0149] It should be understood that the first color light, the second color light, the third color light and the fourth color light are lights of different colors.

[0150] In a possible implementation, the Micro-LED display chip further includes a light transmission layer including a plurality of light transmission units, the light transmission units are arranged on part of the LED units 120, and the first color light emitted by the LED units 120 is transmitted via the light transmission units. It can be understood that if the first color light is a light of a certain wavelength required by the Micro-LED display, the wavelength conversion layer 130 corresponding to the light of the wavelength can be omitted, and the light transmission layer is arranged instead. The following takes the first wavelength conversion unit 131 as the red wavelength conversion layer 130, the second wavelength conversion unit 132 as the green wavelength conversion layer 130, and the third wavelength conversion unit 133 as the blue wavelength conversion layer 130 as an example for description.

[0151] For example, if the first color light emitted by the LED units 120 is blue light, the first wavelength conversion unit 131 is the red wavelength conversion layer 130, and the second wavelength conversion unit 132 is the green wavelength conversion layer 130. Then the corresponding blue wavelength conversion layer 130 does not need to be made.

[0152] For another example, if the first color light emitted by the LED units 120 is ultraviolet light, the first wavelength conversion unit 131 is the red wavelength conversion layer 130, the second wavelength conversion unit 132 is the green wavelength conversion layer 130, and the third wavelength conversion unit 133 is the blue wavelength conversion layer 130. It should be understood that the first wavelength conversion unit 131 corresponding to the wavelength conversion layer 130 is red, the second wavelength conversion unit 132 is green, and the third wavelength conversion unit 133 is blue.

[0153] In some embodiments, the first wavelength conversion unit 131, the second wavelength conversion unit 132 and the third wavelength conversion unit 133 correspond to RGB (red, green, blue) in any way.

[0154] In one feasible implementation, the material used to fabricate the wavelength conversion layer 130 includes wavelength conversion particles and photoresist, wherein the wavelength conversion particles include phosphors and / or quantum dots.

[0155] In this technical solution, materials for preparing the wavelength conversion layer 130 are further provided. The materials may include wavelength conversion particles and photoresist. This arrangement can further improve the stability of the wavelength conversion layer 130. The wavelength conversion particles include phosphors and / or quantum dots. The color conversion of light can be achieved by selecting phosphors and / or quantum dots.

[0156] It is understood that the wavelength conversion particles can be, for example, phosphors and / or quantum dots, etc., and this application does not impose specific limitations on this. For example, quantum dots can be colloidal quantum dots. The wavelength conversion layer 130 can be obtained through an exposure and development process, which is simpler and more controllable in its preparation.

[0157] It should be noted that the photoresist in the embodiments of this application includes, but is not limited to, overcoat photoresist, SU8 (near-ultraviolet negative photoresist), benzocyclobutene (BCB), etc., and may also be SiO2, Al2O3, Si3N4, etc.

[0158] It should be noted that the phosphor can be yttrium aluminum garnet, cerium phosphor, (oxy)nitride phosphor, silicate phosphor, and Mn. 4+ Activated fluoride phosphors, etc. Quantum dots may include one or more combinations of CdSe, CdS, CdZnSe, CdZnS, CdZnSeS, ZnSeS, ZnSe, CuInS, CuInSe, InP, InZnP, and perovskite quantum dots, etc., and this application does not impose specific limitations on them.

[0159] like Figure 1 and Figure 2 As shown, in one feasible embodiment, each LED unit 120 includes: a first semiconductor layer 121, a light-emitting layer 122, and a second semiconductor layer 123, with the light-emitting layer 122 located between the first semiconductor layer 121 and the second semiconductor layer 123.

[0160] In the technical solution, the LED unit 120 can include a first semiconductor layer 121, a light emitting layer 122, and a second semiconductor layer 123 which are sequentially stacked on the driving panel 110. The first semiconductor layer 121 is arranged close to the driving panel 110, wherein the light emitting layer 122 and the second semiconductor layer 123 can be discontinuously arranged, but the bonding layer and the first semiconductor layer 121 of the plurality of LED units 120 can be continuously arranged to improve the adhesion of the epitaxial structure layer to the driving panel 110 and avoid peeling of the epitaxial structure layer from the driving panel 110. Of course, the present application is not limited to this, and in other embodiments, the bonding layer and the first semiconductor layer 121 of the plurality of LED units 120 can also be discontinuously arranged, which will not be described here.

[0161] The second semiconductor layer 123 is an n-type semiconductor layer, and accordingly, the first semiconductor layer 121 is a p-type semiconductor layer, the second electrode layer 170 is an N-pole metal layer, and accordingly, the first electrode layer 160 is a P-pole metal layer. The first electrode contact 111 is an anode metal contact, that is, the first semiconductor layer 121 is applied with an anode voltage; the second electrode contact 112 is a cathode metal contact, that is, the second semiconductor layer 123 is applied with a cathode voltage, so that the light emitting layer 122 of the LED unit 120 can be driven to emit light.

[0162] It should be noted that the materials of the first electrode layer 160 and the second electrode layer 170 can be indium tin oxide, Cr, Ti, Pt, Au, Al, Cu, Ge, or Ni, etc.

[0163] It should be noted that the first semiconductor layer 121 can be a p-type semiconductor layer which can be formed by doping or ion implantation, such as a p-type GaN or InGaN layer, etc., and the first semiconductor layer 121 can be a multi-layer structure. The second semiconductor layer 123 is an n-type semiconductor layer which can be formed by doping or ion implantation, such as an n-type GaN or InGaN layer, etc., and the second semiconductor layer 123 can be a multi-layer structure. The light emitting layer 122 is a layer in which holes provided from the first semiconductor layer 121 and electrons provided from the second semiconductor layer 123 recombine and output light of a specific wavelength, and the light emitting layer 122 can have a single quantum well structure or a multi-quantum well (MQW) structure and a well layer and a barrier layer are alternately stacked. The implanted ions can be H + , He + , N + , O + , F + , Mg + , and Ar + , etc.

[0164] For example, Figure 1 and Figure 2As shown, in one feasible embodiment, there is a first electrode layer 160 and a second electrode layer 170; wherein, a plurality of first electrode contacts 111 and a plurality of second electrode contacts 112 are formed on the drive panel 110, the first electrode layer 160 is connected to the first electrode contacts 111, and the second electrode layer 170 is connected to the second electrode contacts 112.

[0165] In this technical solution, the Micro-LED display chip 1000 may further include a first electrode layer 160 and a second electrode layer 170. A plurality of first electrode contacts 111 and a plurality of second electrode contacts 112 are formed on the driving panel 110. The first electrode layer 160 is connected to the first electrode contacts 111, and the second electrode layer 170 is connected to the second electrode contacts 112. Based on this, the LED unit 120 can be driven to emit laser light.

[0166] In some embodiments, the driving panel 110 may include a substrate, a driving circuit, and a plurality of contacts connected to the driving circuit, with the LED unit 120 electrically connected to the plurality of contacts. It should be understood that the driving panel 110 may also be provided with a circuit layer including complementary metal oxide semiconductor (CMOS) devices or TFT devices, which can constitute the driving circuit. The substrate material may be a semiconductor material such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, or indium phosphide, or a non-conductive material such as glass, plastic, or sapphire wafer.

[0167] like Figure 7 and Figure 11 As shown, in some embodiments, the multiple contacts include a first electrode contact 111 and a second electrode contact 112. The first electrode contact 111 can be electrically connected to each LED unit 120 respectively, and the second electrode contact 112 is electrically connected to the multiple LED units 120 to individually drive any one of the multiple LED units 120 to emit light.

[0168] It should be noted that, as Figure 1 As shown, the first electrode contact 111 can be an anode metal contact, and the second electrode contact 112 can be a cathode metal contact. The first electrode contact 111 is electrically connected to the first electrode layer 160, and the second electrode contact 112 is electrically connected to the second electrode layer 170. The second electrode contact 112 can be a common electrode contact for multiple LED units 120. The first electrode contact 111 can be independently connected to each LED unit 120. In this embodiment, the first electrode contact 111 can individually apply an anode voltage to the LED unit 120, providing an individual driving signal, thereby achieving the purpose of individually controlling the light emission of each LED unit 120.

[0169] It should be noted that, as shown in Figure 2 The first electrode contact 111 can be an anode metal contact, and the second electrode contact 112 can be a cathode metal contact. The first electrode contact 111 is electrically connected to the first electrode layer 160, and the second electrode contact 112 is electrically connected to the second electrode layer 170. The first electrode contact 111 can be a common electrode contact of the plurality of LED units 120. The second electrode contact 112 can be independently connected to each LED unit 120. In the embodiment of the present application, an anode voltage can be applied to the LED unit 120 through the second electrode contact 112, and a separate driving signal can be provided, so that the purpose of individually controlling the light emission of each LED unit 120 can be achieved.

[0170] In summary, the Micro-LED display chip, whether it is a common anode structure, a common cathode structure, or an independent power supply structure, does not affect the achievement of the technical effects of the present application, and is within the protection scope of the present application.

[0171] In some embodiments, the connection structure of the LED unit 120 can be common cathode or common anode or independent. As an example, a common cathode structure can be achieved by connecting the continuous cathode semiconductor layer. As another example, a common anode structure or an independent structure can also be used, as long as the LED unit 120 can be individually lit and emit light.

[0172] In some embodiments, there can also be other film layers between the LED unit 120 and the driving panel 110, such as a bonding layer. The LED unit 120 can be adhered or bonded to the surface of the driving panel 110 through the bonding layer.

[0173] In some embodiments, the first electrode layer 160 can be part of the bonding layer. The material of the bonding layer can be a conductive material, such as a metal material or a metal alloy material, specifically including Au, Sn, In, Cu, or Ti, etc. Of course, the material of the bonding layer can also be a non-conductive material, such as polyimide, polydimethylsiloxane, or Su-8 photoresist, etc. It can be understood that if the material of the bonding layer is a non-conductive material, the bonding layer cannot be used as an anode together with the first semiconductor layer 121. At this time, the first electrode layer 160 can be separately provided.

[0174] As shown in Figure 3 and Figure 4 In a feasible implementation, the Micro-LED display chip 1000 further includes a passivation layer 180 covering the side surface of the LED unit 120.

[0175] In this technical solution, the Micro-LED display chip 1000 may further include a passivation layer 180 covering the side of the LED unit 120. The material used to prepare the passivation layer 180 includes a transparent insulating material, such as SiO2 or SiN. x By setting the passivation layer 180, short circuits in the LED unit 120 can be prevented, ensuring the reliability of the Micro-LED display chip 1000.

[0176] like Figure 6 to Figure 10 As shown, a display device 200 is provided according to a second aspect of the embodiments of this application, comprising: a Micro-LED display chip as described in any of the above technical solutions.

[0177] The display device 200 provided in this application embodiment includes a Micro-LED display chip as described in any of the above technical solutions. Therefore, the display device 200 possesses all the beneficial effects of the Micro-LED display chip described in the above technical solutions, which will not be elaborated here.

[0178] like Figure 9 to Figure 10 As shown, in some examples, the display device 200 may also include an encapsulation layer 2100 for encapsulating Micro-LEDs.

[0179] A method for fabricating a Micro-LED display chip is provided according to a third aspect of the embodiments of this application, comprising:

[0180] Step 301: Provide the driver panel;

[0181] Step 302: Form multiple LED units on the driver panel;

[0182] Step 303: Form a wavelength conversion layer above multiple LED units, the wavelength conversion layer including multiple wavelength conversion units;

[0183] Step 304: Form a lens unit on the wavelength conversion layer;

[0184] Step 305: Deposit at least two stacked light-concentrating layers on the lens unit.

[0185] like Figure 7 to Figure 9As shown, the fabrication method of this application embodiment first provides a driving panel 110, then forms a plurality of LED units 120 on the driving panel 110, then forms a wavelength conversion layer 130 on the LED units 120, and finally sets at least two stacked light-concentrating layers 141 on the wavelength conversion layer 130. Based on this, the coverage area of ​​the lens unit 190 can be increased, enabling the lens unit 190 to fully cover the entire pixel area of ​​the Micro-LED display chip 1000, thereby improving the light-concentrating effect. This allows more or all light to be projected through the lens unit 190, collecting tiny light rays and focusing them on a specific area, thereby improving the brightness and clarity of the pixels; at the same time, the lens unit 190 can better adjust the angle and distribution of light, thereby improving the color uniformity between pixels and making the displayed image more vivid and realistic. This further improves the contrast of the Micro-LED display chip 1000, reduces glare and halo effects, and thus enables the Micro-LED display chip 1000 to provide a clearer and more realistic visual experience.

[0186] A driving panel 110 is provided, which includes a substrate, a driving circuit (not shown) located on one side of the substrate, and a plurality of contacts electrically connected to the driving circuit. The substrate material may include semiconductor materials such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, and indium phosphide, or non-conductive materials such as glass, plastic, or sapphire wafer. The driving circuit includes CMOS devices or TFT devices, etc., and the contacts include a first electrode contact 111 and a second electrode contact 112.

[0187] like Figure 7 to Figure 9 As shown, in one feasible embodiment, the step of providing at least two stacked light-concentrating layers 141 on the lens unit 190 includes: sequentially providing stacked light-concentrating layers 141 on the first light-concentrating layer 141 by spraying and / or deposition processes.

[0188] In this technical solution, specific steps for preparing the stacked light-concentrating layer 141 are further provided. The light-concentrating layer 141 can be prepared layer by layer on the basis of the first light-concentrating layer 141 by spraying and / or deposition processes. This setting makes it easier to control the thickness and shape of the light-concentrating layer 141, and at the same time makes it easier to control the curvature radius of the finally formed lens unit 190 and the overall multiple light-concentrating layers 141. This can reduce the difficulty of preparing multiple light-concentrating layers 141, and at the same time facilitate the precise control of the shape of the light-concentrating layer 141.

[0189] like Figure 2As shown, in one feasible embodiment, a wavelength conversion layer is formed above a plurality of LED units 120. The wavelength conversion layer includes a plurality of wavelength conversion units. The steps include: depositing a light-concentrating material on the wavelength conversion layer 130; forming a lens unit 190 on the wavelength conversion layer 130 by a reflow soldering process; or forming the lens unit by shape transfer.

[0190] In this technical solution, a process step for fabricating the lens unit 190 is further provided. The lens unit 190 is formed on the wavelength conversion layer 130 by reflow soldering. This arrangement facilitates the formation of the lens unit 190, and also facilitates automated production and precise control.

[0191] Among them, such as Figure 2 As shown, an organic or inorganic material is first applied to the wavelength conversion layer 130. High-refractive-index materials are then deposited onto the wavelength conversion layer 130 using methods such as spin coating, evaporation, sputtering, or deposition. These high-refractive-index materials include, but are not limited to, Al2O3, TiO2, and high-refractive-index resins. Next, a reflow material is prepared on top, with adjustable reflow morphology, such as rectangular, frustum, conical, or hemispherical shapes. Finally, pattern transfer is performed using etching techniques to achieve the fabrication of the first light-concentrating layer 141.

[0192] In one feasible implementation, the step of forming a wavelength conversion layer 130 on a plurality of LED units 120 includes: forming a grid structure 150 on the periphery of the LED units 120; and disposing the wavelength conversion layer 130 within the grid aperture 151.

[0193] In this technical solution, a step of setting the wavelength conversion layer 130 is further provided. First, a grid structure 150 is formed on the periphery of the LED unit 120, and then the wavelength conversion layer 130 is set in the grid hole 151 formed by the grid structure 150, which can make the wavelength conversion layer 130 more stable.

[0194] like Figure 2 As shown, in one feasible implementation, the thickness of each light-concentrating layer 141 is determined by the following relationship:

[0195] d x =λ x / 4n x

[0196] Where, d x λ is the thickness of the light-concentrating layer 141. x n represents the wavelength of the light converted by the wavelength conversion layer. x The refractive index of the light-concentrating layer 141;

[0197] Among them, such as ​As shown, adjacent lens units 190 and light-concentrating layers 141 satisfy the following relationship:

[0198]

[0199] Wherein, n0 is the refractive index of lens unit 190, n1 is the refractive index of the first light-concentrating layer 1411 disposed on the lens unit, n2 is the refractive index of the second light-concentrating layer 1412 disposed on the first light-concentrating layer 1411, and n3 is the refractive index of the third light-concentrating layer 1413 disposed on the second light-concentrating layer 1412.

[0200] In this technical solution, the relationship between reflected light and refracted light between two adjacent light-concentrating layers 141 is further provided. By determining the above relationship, it is convenient to control the light path by adjusting the refractive index of different light-concentrating layers 141.

[0201] This technical solution further provides the relationship between four adjacent light-concentrating layers 141 when there are multiple light-concentrating layers 141. By determining the aforementioned relationship, destructive interference is generated through reflection and transmission between layers of materials with different refractive indices. This enhances some light while weakening others, ensuring that the peak position of the light within a specific wavelength range is within the transmission range. This achieves full anti-reflection of the characteristic wavelength, thereby increasing the transmittance of the light in that wavelength range and realizing full anti-reflection of a fixed wavelength. This makes the Micro-LED display chip 1000 brighter, improves color accuracy, and reduces glare by minimizing unnecessary reflected light, thus improving display contrast.

[0202] This technical solution further provides a method for calculating the thickness of each light-concentrating layer 141. By determining the aforementioned relationship, the light-concentrating layer 141 can better control the light path, thereby improving the light-concentrating effect. On the one hand, it reduces light scattering and internal absorption, thus increasing light transmittance and resulting in higher brightness for the display. On the other hand, it ensures that the light is more concentrated after focusing, reducing the influence of stray light and thus improving the display's contrast. Simultaneously, it facilitates the clarification of the manufacturing process for each light-concentrating layer 141, reducing process complexity, and enables the standardization of the Micro-LED display chip 1000, ensuring consistency between different Micro-LED display chips 1000.

[0203] like ​ As shown, in one feasible embodiment, at least two stacked focusing layers 141 have a decreasing refractive index in the direction from the LED unit 120 to the wavelength conversion layer 130, wherein two adjacent focusing layers 141 satisfy the following relationship:

[0204] n 入 sinθ 入= n 出 sin θ 出

[0205] wherein n 入 is the refractive index of the condensing layer 141 in front of the incident interface, θ 入 is the incident angle, n 出 is the refractive index of the condensing layer 141 behind the incident interface, θ 出 is the exit angle;

[0206] wherein the focal length of the plurality of condensing layers 141 and the lens unit 190 as a whole is determined based on the following formula:

[0207]

[0208] wherein f is the focal length of the plurality of condensing layers 141 and the lens unit 190 as a whole, n 入 is the refractive index of the incident interface of the plurality of condensing layers 141 and the lens unit 190 as a whole, n 出 is the refractive index of the exit interface of the plurality of condensing layers 141 and the lens unit 190 as a whole, and r is the radius of curvature.

[0209] In this technical solution, the relationship between the reflected light and the refracted light between two adjacent condensing layers 141 is further provided, and by determining the above relationship, the light path can be controlled by adjusting the refractive index of different condensing layers 141, which is conducive to achieving collimation.

[0210] In this technical solution, the specific way of determining the focal length of the plurality of condensing layers 141 and the lens unit 190 as a whole is further provided, and such arrangement enables the performance parameters and structural parameters of the plurality of condensing layers 141 and the lens unit 190 as a whole to be calculated, which is conducive to setting the shape of the plurality of condensing layers 141 and the lens unit 190 as a whole based on the focal length of the eye.

[0211] The term "layer" used in this application refers to a portion of material that includes a region having a thickness. The layer can extend over the entire underlying or overlying structure, or can extend over only a portion of the underlying or overlying structure. Further, a layer can be a region of a homogenous or inhomogenous continuous structure having a thickness that is less than the thickness of the continuous structure. For example, a layer can be located between the top surface and the bottom surface of a continuous structure or between any pair of horizontal planes therein. The layer can extend horizontally, vertically, and / or along a tapered surface.

[0212] In the present application, the terms "first", "second", "third" are only used for descriptive purpose, and should not be understood as indicating or implying relative importance. The term "multiple" refers to two or more, unless otherwise explicitly limited. The terms "mount", "connect", "connection", "fix", and the like should be interpreted broadly, for example, "connection" can be fixed connection, or detachable connection, or integral connection; "connection" can be direct connection, or indirect connection through intermediate medium. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0213] In the description of the present application, it should be understood that the terms "upper", "lower", "left", "right", "front", "back", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or unit referred to must have a particular direction, be constructed and operated in a particular orientation, therefore, should not be understood as a limitation on the present application.

[0214] In the description of the present application, the terms "one embodiment", "some embodiments", "a specific embodiment", and the like, mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0215] The above is only the preferred embodiment of the present application, and is not intended to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A Micro-LED display chip, characterized in that, include: Driver panel; Multiple LED units are arranged on the driver panel; A wavelength conversion layer is disposed above the LED unit and includes multiple wavelength conversion units; A lens unit that covers the corresponding wavelength conversion unit; At least two of the light-concentrating layers are stacked on the lens unit.

2. The Micro-LED display chip according to claim 1, characterized in that, Multiple stacked light-concentrating layers are divided into multiple groups, each group including two stacked light-concentrating layers. In each group, the light-concentrating layer with the higher refractive index is positioned closer to the wavelength conversion layer.

3. The Micro-LED display chip according to claim 1, characterized in that, The thickness of each of the aforementioned focusing layers is determined based on the incident light wavelength and the refractive index of the focusing layer; The thickness of each of the light-concentrating layers is determined by the following formula: d x =λ x / 4n x Where, d x λ is the thickness of the light-concentrating layer. x n represents the wavelength of the light converted by the wavelength conversion layer. x The refractive index of the light-concentrating layer; The adjacent lens units and the focusing layer satisfy the following relationship: Where n0 is the refractive index of the lens unit, n1 is the refractive index of the first light-concentrating layer of the lens unit, n2 is the refractive index of the second light-concentrating layer on the first light-concentrating layer, and n3 is the refractive index of the third light-concentrating layer on the second light-concentrating layer.

4. The Micro-LED display chip according to claim 1, characterized in that, At least two of the stacked focusing layers have a decreasing refractive index in the direction from the LED unit to the wavelength conversion layer; The following relationship is satisfied between two adjacent focusing layers: n 入 sinθ 入 =n 出 sinθ 出 Where, n 入 Let θ be the refractive index of the focusing layer in front of the incident interface. 入 Let n be the incident angle. 出 The refractive index of the focusing layer behind the incident interface, θ 出 The launch angle; The focal length of all the light-gathering layers and the lens unit as a whole is determined based on the refractive index and radius of curvature of all the light-gathering layers and the lens unit as a whole; The focal length of all the light-collecting layers and the lens unit as a whole is determined based on the following formula: Where f is the focal length of all the light-gathering layers and the lens unit as a whole, n 入 n is the refractive index of the incident interface of all the light-collecting layers and the lens unit as a whole. 出 Let r be the refractive index of the exit interface of all the light-collecting layers and the lens unit as a whole, and r be the radius of curvature.

5. The Micro-LED display chip according to claim 1, characterized in that, The focal length of all the light-collecting layers and the lens unit as a whole is 0.5 to 10 μm.

6. The Micro-LED display chip according to any one of claims 1 to 5, characterized in that, Also includes: A grid structure with multiple grid holes is disposed on the driving panel, with each LED unit corresponding to one grid hole, and the wavelength conversion unit disposed in the corresponding grid hole.

7. The Micro-LED display chip according to claim 6, characterized in that, The grid structure also includes: A reflective layer that at least covers the sidewalls of the grid apertures.

8. The Micro-LED display chip according to claim 1, characterized in that, The plurality of wavelength conversion units include: Multiple first wavelength conversion units, wherein the first wavelength conversion units convert the first color light into the second color light; Multiple second wavelength conversion units convert the first color light into a third color light.

9. The Micro-LED display chip according to claim 8, characterized in that, The plurality of wavelength conversion units also include: Multiple third wavelength conversion units, wherein the third wavelength conversion units convert the first color light into a fourth color light; and / or A light-transmitting layer includes multiple light-transmitting units, which are disposed on a portion of the LED units, and the first color light emitted by the LED units is transmitted through the light-transmitting units.

10. A method for fabricating a Micro-LED display chip, characterized in that, include: Provides a driver panel; Multiple LED units are formed on the drive panel; A wavelength conversion layer is formed above the plurality of LED units, and the wavelength conversion layer includes a plurality of wavelength conversion units; A lens unit is formed on the wavelength conversion layer; At least two stacked light-concentrating layers are disposed on the lens unit.

11. The preparation method according to claim 10, characterized in that, The step of setting at least two stacked light-concentrating layers on the lens unit includes: A series of light-concentrating layers are sequentially deposited on the lens unit through spraying and / or deposition processes.

12. The preparation method according to claim 10, characterized in that, The step of forming a wavelength conversion layer above the plurality of LED units, the wavelength conversion layer comprising a plurality of wavelength conversion units, includes: A light-concentrating material is deposited in the wavelength conversion layer; Lens units are formed on the wavelength conversion layer using a reflow soldering process; or The lens unit is constructed using a shape-transfer mechanism.

13. The preparation method according to claim 10, characterized in that, The step of forming a wavelength conversion layer on the plurality of LED units includes: A grid structure is formed around the periphery of the LED unit; A wavelength conversion layer is set inside the grid aperture.

14. The preparation method according to any one of claims 10 to 13, characterized in that, The thickness of each of the aforementioned focusing layers is determined based on the incident light wavelength and the refractive index of the focusing layer; The thickness of each of the light-concentrating layers is determined by the following formula: d x =λ x / 4n x Where, d x λ is the thickness of the light-concentrating layer. x n represents the wavelength of the light converted by the wavelength conversion layer. x The refractive index of the light-concentrating layer; The adjacent lens units and the focusing layer satisfy the following relationship: Where n0 is the refractive index of the lens unit, n1 is the refractive index of the first light-concentrating layer of the lens unit, n2 is the refractive index of the second light-concentrating layer on the first light-concentrating layer, and n3 is the refractive index of the third light-concentrating layer on the second light-concentrating layer.

15. The preparation method according to any one of claims 10 to 13, characterized in that, At least two of the stacked focusing layers have a decreasing refractive index in the direction from the LED unit to the wavelength conversion layer; The following relationship is satisfied between two adjacent focusing layers: n 入 sinθ 入 =n 出 sinθ 出 Where, n 入 Let θ be the refractive index of the focusing layer in front of the incident interface. 入 Let n be the incident angle. 出 The refractive index of the focusing layer behind the incident interface, θ 出 The launch angle; The focal length of all the light-gathering layers and the lens unit as a whole is determined based on the refractive index and radius of curvature of all the light-gathering layers and the lens unit as a whole; The focal length of all the light-collecting layers and the lens unit as a whole is determined based on the following formula: Where f is the focal length of all the light-gathering layers and the lens unit as a whole, n 入 n is the refractive index of the incident interface of all the light-collecting layers and the lens unit as a whole. 出 Let r be the refractive index of the exit interface of all the light-collecting layers and the lens unit as a whole, and r be the radius of curvature.

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