Vertically stacked three-color full-color Micro-LED structure

Abstract

The utility model relates to the field of Micro-LED display, in particular to a vertically stacked three-color full-color Micro-LED structure, which is characterized in that the vertically stacked three-color full-color Micro-LED structure comprises a driving circuit, a first chip, a second chip and a third chip are sequentially arranged on one side of the length direction of the driving circuit from top to bottom, and the first chip, the second chip and the third chip are arranged on the other side of the length direction of the driving circuit. The length of the first chip is larger than that of the second chip, and the length of the second chip is larger than that of the third chip, (1) the space occupation caused by transverse tiling in the Micro-LED array is reduced, the pixel density of a display screen is remarkably improved, the area of full-color pixels is reduced, the overall size of the screen is reduced, and the size of the display screen is reduced; according to the invention, the structure is simple, the structure is compact, the structure is simple, the structure is especially suitable for high-precision, high-resolution and miniaturized display equipment, the influence of high-energy photons of blue light or green light on the red light chip is effectively reduced, each chip pole can be directly and vertically connected to the driving circuit at the bottom, the occupied space is reduced, and the problems of complicated pole extension and connection in a traditional stacked structure are avoided.

Description

Technical Field

[0001] This utility model relates to the field of Micro-LED displays, and in particular to a vertically stacked three-color full-color Micro-LED structure. Background Technology

[0002] With the continuous advancement of display technology, Micro-LED has emerged as a leading technology in next-generation display devices due to its superior performance. Micro-LED displays offer numerous advantages, including high efficiency, high brightness, high reliability, energy saving, and miniaturization. As a result, they have become an important display technology for future applications in consumer electronics, wearable devices, automotive displays, and augmented reality (AR) / virtual reality (VR) devices. Compared to traditional OLED and LCD display technologies, Micro-LED has significant advantages in brightness, contrast, response time, and power consumption, and is particularly competitive in areas such as sunlight visibility, screen lifespan, and color saturation.

[0003] To achieve full-color display in Micro-LED displays, precise integration of red, green, and blue (RGB) Micro-LED chips is required. The current mainstream pixel arrangement is blue-green-green-red (BGRG). This structure means that each full-color pixel is composed of four monochrome Micro-LED devices. Even though the size of Micro-LED devices is already extremely small, considering the composition of full-color pixels, the size of each pixel still far exceeds the area of ​​a single device, thus reducing the pixel density (PPI) of the display device and limiting the application potential of Micro-LED in high-resolution scenarios.

[0004] Therefore, those skilled in the art are dedicated to developing a small-area, high-resolution vertically stacked three-color full-color Micro-LED structure. Utility Model Content

[0005] In view of the above-mentioned deficiencies of the prior art, the technical problem to be solved by this utility model is to provide a vertically stacked three-color full-color Micro-LED structure.

[0006] To achieve the above objectives, this utility model provides a vertically stacked three-color full-color Micro-LED structure, including a driving circuit. A first chip, a second chip, and a third chip are arranged sequentially from top to bottom on one side of the driving circuit along its length. The first chip is longer than the second chip, and the second chip is longer than the third chip. This size-differentiated design allows the electrode of each chip to be directly and vertically connected to the driving circuit at the bottom, eliminating the need for complex electrode extension and connection processes. This greatly simplifies the device fabrication process and reduces manufacturing costs and process difficulty.

[0007] Preferably, the first chip is a blue light chip, the second chip is a green light chip, and the third chip is a red light chip. The stacking order of the chips is determined according to their wavelengths. The red light chip, which has the longest wavelength, is placed at the bottom of the structure, followed by the green light chip and the blue light chip. This vertical stacking order can effectively reduce the impact of high-energy photons from blue or green light on the lower red light chip.

[0008] Preferably, the first chip has a first PN electrode step, and a first electrode post extending in the direction close to the driving circuit is provided in the first PN electrode step. One end of the first electrode post is connected to the first chip, and the other end is connected to the driving circuit. The first chip has a second electrode post extending in the direction close to the driving circuit at the end away from the first PN electrode step. One end of the second electrode post is connected to the first chip, and the other end is connected to the driving circuit.

[0009] Preferably, the second chip has a second PN electrode step, and a third post extending in the direction close to the driving circuit is provided in the second PN electrode step. One end of the third post is connected to the second chip, and the other end is connected to the driving circuit. The second chip has a fourth post extending in the direction close to the driving circuit at the end away from the second PN electrode step. One end of the fourth post is connected to the second chip, and the other end is connected to the driving circuit.

[0010] Preferably, the third chip has a third PN electrode step, and a fifth electrode extending in the direction close to the driving circuit is provided in the third PN electrode step. One end of the fifth electrode is connected to the third chip, and the other end is connected to the driving circuit. The third chip has a sixth electrode extending in the direction close to the driving circuit on the side away from the third PN electrode step. One end of the sixth electrode is connected to the third chip, and the other end is connected to the driving circuit.

[0011] Preferably, insulating material is filled between the first chip, the second chip, the third chip and the driving circuit. The insulating material not only isolates each chip to prevent short circuits, but also provides support for each chip, improving the overall structural strength and thus enhancing the long-term reliability of the device.

[0012] Preferably, the first chip, the second chip, and the third chip are all configured with a flip-chip structure.

[0013] The beneficial effects of this utility model are:

[0014] 1) This invention reduces the space occupied by horizontal tiling in the Micro-LED array, significantly improves the pixel density (PPI) of the display screen, reduces the area of ​​full-color pixels, and reduces the overall size of the screen, making it particularly suitable for high-precision, high-resolution and miniaturized display devices.

[0015] 2) Effectively reduce the impact of high-energy photons from blue or green light on the red light chip.

[0016] 3) Each chip's terminal block can be directly and vertically connected to the bottom drive circuit, reducing the footprint and avoiding the complex terminal block extension and connection problems in traditional stacked structures. Attached Figure Description

[0017] Figure 1 This is a structural schematic diagram of a specific embodiment of the present invention.

[0018] 1. First chip; 11. First PN electrode step; 11a. First terminal; 12. Second terminal; 2. Second chip; 21. Second PN electrode step; 21a. Third terminal; 22. Fourth terminal; 3. Third chip; 31. Third PN electrode step; 31a. Fifth terminal; 32. Sixth terminal; 4. Drive circuit; 5. Insulating material. Detailed Implementation

[0019] The present invention will be further described below with reference to the accompanying drawings and embodiments. It should be noted that in the description of the present invention, terms such as "upper," "lower," "left," "right," "inner," and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are used only for the convenience of describing the present invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific manner. Therefore, they should not be construed as limitations on the present invention. Terms such as "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0020] like Figure 1 As shown, a vertically stacked three-color full-color Micro-LED structure includes a driving circuit 4, which provides power to the chipset. Along one side of the driving circuit 4, from top to bottom, are arranged a first chip 1, a second chip 2, and a third chip 3. In this embodiment, the first chip 1 is a blue light chip, the second chip 2 is a green light chip, and the third chip 3 is a red light chip. Other embodiments may use different arrangements. This application stacks the blue, green, and red Micro-LED chips vertically from top to bottom to prevent crosstalk between different colors of light, especially the phenomenon of high-energy photons exciting low-energy photons. Specifically, the red light chip with the longest wavelength is placed at the bottom, followed by the green light chip, and finally the blue light chip with the shortest wavelength is placed at the top. This vertical stacking order effectively reduces the impact of high-energy blue or green photons on the lower red light chip, and the stacked chips are tightly integrated, minimizing space occupation.

[0021] In this embodiment, the length of the first chip 1 is greater than that of the second chip 2, and the length of the second chip 2 is greater than that of the third chip 3. Specifically, the first chip 1 has the longest size, the second chip 2 has a medium size, and the third chip 3 has the shortest size. This design with size difference between adjacent chips allows each chip's electrode to be directly and vertically connected to the bottom driving circuit 4, reducing the space occupied and avoiding the complex electrode extension and connection problems in traditional stacked structures.

[0022] The first chip 1 has a first PN electrode step 11, and a first electrode post 11a extending in the direction close to the driving circuit 4 is provided in the first PN electrode step 11. One end of the first electrode post 11a is connected to the first chip 1, and the other end is connected to the driving circuit 4. The first chip 1 has a second electrode post 12 extending in the direction close to the driving circuit 4 at the end away from the first PN electrode step 11. One end of the second electrode post 12 is connected to the first chip 1, and the other end is connected to the driving circuit 4. In this embodiment, the first electrode post 11a is connected to the N-type electrode in the first chip 1, and the second electrode post 12 is connected to the P-type electrode in the first chip 1. In other embodiments, the first electrode post 11a can be connected to the P-type electrode, and the second electrode post 12 can be connected to the N-type electrode. The specific connection method can be selected according to the actual situation. Regardless of which connection method is used, the function is the same, which is to supply power to the first chip 1 through the first electrode post 11a and the second electrode post 12.

[0023] The second chip 2 has a second PN electrode step 21. A third terminal 21a extending along the direction close to the driving circuit 4 is located within the second PN electrode step 21. One end of the third terminal 21a is connected to the second chip 2, and the other end is connected to the driving circuit 4. A fourth terminal 22 extending along the direction close to the driving circuit 4 is located at the end of the second chip 2 away from the second PN electrode step 21. One end of the fourth terminal 22 is connected to the second chip 2, and the other end is connected to the driving circuit 4. In this embodiment, the third terminal 21a is connected to the N-type electrode in the second chip 2, and the fourth terminal 22 is connected to the P-type electrode in the second chip 1. In other embodiments, the third terminal 21a can be interchanged with the P-type electrode, and the fourth terminal 22 with the N-type electrode. The specific connection method can be selected according to the actual situation. Regardless of which connection method is used, the function is the same: to supply power to the second chip 2 through the third terminal 21a and the fourth terminal 22.

[0024] The third chip 3 has a third PN electrode step 31, and a fifth electrode post 31a extending in the direction close to the driving circuit 4 is provided in the third PN electrode step 31. One end of the fifth electrode post 31a is connected to the third chip 3, and the other end is connected to the driving circuit 4. On the side of the third chip 3 away from the third PN electrode step 31, a sixth electrode post 32 extending in the direction close to the driving circuit 4 is provided. One end of the sixth electrode post 32 is connected to the third chip 3, and the other end is connected to the driving circuit 4. In this embodiment, the fifth electrode post 31a is connected to the N-type electrode in the third chip 3, and the sixth electrode post 32 is connected to the P-type electrode in the third chip 3. In other embodiments, the fifth electrode post 31a can be interchanged with the P-type electrode, and the sixth electrode post 32 can be connected with the N-type electrode. The specific connection method can be selected according to the actual situation. Regardless of which connection method is used, the function is the same, which is to supply power to the third chip 3 through the fifth electrode post 31a and the sixth electrode post 32.

[0025] The first terminal 11a, the second terminal 12, the third terminal 21a, the fourth terminal 22, the fifth terminal 31a, and the sixth terminal 32 are all made of conductive material. In this embodiment, the conductive material is copper. In other embodiments, other conductive materials such as aluminum, gold, and titanium may also be used.

[0026] In this embodiment, the first chip 1, the second chip 2, and the third chip 3 are all configured with a flip-chip structure. The space between the first chip 1, the second chip 2, the third chip 3, and the driving circuit 4 is filled with insulating material 5. The insulating material 5 not only insulates and isolates each chip to prevent short circuits between adjacent chips, but also provides support for each chip, improving the overall structural strength and thus enhancing the long-term reliability of the device. In this embodiment, the insulating material 5 is silicon dioxide. Other insulating materials, such as polyimide, silicon nitride, and aluminum oxide, can also be used in other embodiments.

[0027] In use, a green light chip of appropriate length is placed on the shortest red light chip, and the longest blue light chip is placed on the green light chip. The red, green, and blue light chips are insulated and then connected to the driving circuit 4. This design allows the terminals of each chip to be directly and vertically connected to the driving circuit 4 at the bottom, reducing the space occupied and avoiding the complex terminal extension and connection problems in traditional stacked structures. Moreover, the stacked chip layers are tightly integrated, minimizing space occupation. This design can also effectively reduce the impact of high-energy photons of blue or green light on the lower red light chip.

[0028] The preferred embodiments of this utility model have been described in detail above. It should be understood that those skilled in the art can make numerous modifications and variations based on the concept of this utility model without creative effort. Therefore, all technical solutions that can be obtained by those skilled in the art based on the concept of this utility model through logical analysis, reasoning, or limited experimentation on the basis of existing technology should be within the scope of protection defined by the claims.

Claims

1. A vertically stacked three-color full-color Micro-LED structure, characterized in that: Including driving circuit (4), the driving circuit (4) length direction side is sequentially provided with first chip (1), second chip (2) and third chip (3) from top to bottom, the first chip (1) length is greater than second chip (2), and the second chip (2) length is greater than third chip (3); The first chip (1) is provided with first PN pole step (11), the first PN pole step (11) is provided with the first pole (11a) extending along the direction close to driving circuit (4), and one end of the first pole (11a) is connected with the first chip (1), and the opposite end is connected with driving circuit (4); The first chip (1) is provided with the second pole (12) extending along the direction close to driving circuit (4) away from the one end of first PN pole step (11), and one end of the second pole (12) is connected with the first chip (1), and the opposite end is connected with driving circuit (4). 2.The vertical stacked three-color full-color Micro-LED structure of claim 1, wherein: The first chip (1) is a blue light chip, the second chip (2) is a green light chip, and the third chip (3) is a red light chip. 3.The vertical stacked three-color full-color Micro-LED structure of claim 1 or 2, wherein: The second chip (2) is provided with second PN pole step (21), the second PN pole step (21) is provided with the third pole (21a) extending along the direction close to driving circuit (4), and one end of the third pole (21a) is connected with the second chip (2), and the opposite end is connected with driving circuit (4); The second chip (2) is provided with the fourth pole (22) extending along the direction close to driving circuit (4) away from the one end of second PN pole step (21), and one end of the fourth pole (22) is connected with the second chip (2), and the opposite end is connected with driving circuit (4). 4.The vertical stacked three-color full-color Micro-LED structure of claim 3, wherein: The third chip (3) is provided with third PN pole step (31), the third PN pole step (31) is provided with the fifth pole (31a) extending along the direction close to driving circuit (4), and one end of the fifth pole (31a) is connected with the third chip (3), and the opposite end is connected with driving circuit (4); The third chip (3) is provided with the sixth pole (32) extending along the direction close to driving circuit (4) away from the one end of third PN pole step (31), and one end of the sixth pole (32) is connected with the third chip (3), and the opposite end is connected with driving circuit (4). 5.The vertically stacked three-color full-color Micro-LED structure of claim 3, wherein: The first chip (1), second chip (2), third chip (3) and driving circuit (4) are filled with insulating material (5).

6. The vertically stacked three-color full-color Micro-LED structure of claim 1, wherein: The first chip (1), second chip (2) and third chip (3) are provided in flip chip structure.

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