Image sensor and manufacturing method thereof

Abstract

The invention provides an image sensor and a manufacturing method thereof, the image sensor comprises a plurality of pixel areas, the method comprises the following steps: forming a first optical active layer of a perovskite type material in the plurality of pixel areas, combining a first material with the first optical active layer in a second pixel area to form a second optical active layer, the first material comprises a first halogen element, and the first halogen element is used for adjusting the light response wave band of the first light active layer to be the light response wave band of the second light active layer. The light response wave band can be adjusted by utilizing the first material, namely, the light response wave band of the light active layer is easy to adjust, and the light active layer with a plurality of different light response wave bands can be formed by utilizing a simple manufacturing process. And the first optical active layer and the second optical active layer are used for carrying out selective optical response, and a Bayer color filter array is not needed for filtering, so that the problem of poor imaging effect caused by the defects of the Bayer color filter array is avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and in particular to an image sensor and its manufacturing method. Background Technology

[0002] In certain applications, image sensors can be used to image an object, providing a preliminary understanding of its general outline and material. Current image sensors primarily utilize silicon as the photosensitive material. Silicon's light response bands cover both visible and near-infrared light. However, silicon cannot achieve selective light response for a specific light response band. Therefore, a Bayer color filter array (CFA) is used to filter different light response bands before silicon is used to perform light response imaging on the filtered light response bands.

[0003] Therefore, the imaging performance of current image sensors is affected by CFA. If the CFA has defects, it will affect the filtering of the light response band, which in turn affects the light response of silicon, ultimately leading to problems such as color shift, distortion or unevenness in imaging. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide an image sensor and a method for manufacturing the same, which can form photoactive layers with different light response bands using a simple manufacturing process, and use the photoactive layers to selectively respond to different light response bands to improve the imaging color effect.

[0005] This application provides a method for manufacturing an image sensor, the image sensor including a plurality of pixel regions, wherein the plurality of pixel regions include at least a first pixel region and a second pixel region;

[0006] The method includes:

[0007] A first photoactive layer is formed in a plurality of pixel regions, the first photoactive layer comprising a perovskite material;

[0008] A first mask layer is formed over a plurality of pixel regions other than the second pixel region, the first mask layer at least covering the first photoactive layer located in the first pixel region;

[0009] A second photoactive layer is formed by combining the first photoactive layer located in the second pixel region with the first material;

[0010] The first photoactive layer and the second photoactive layer have different photoresponse bands. The first material includes a first halogen element, and the photoresponse band of the first photoactive layer is adjusted to the photoresponse band of the second photoactive layer using the first halogen element.

[0011] Optionally, forming the second photoactive layer includes:

[0012] The first photoactive layer located in the second pixel region is annealed in a vapor containing the first material to combine the first material and the first photoactive layer to form the second photoactive layer.

[0013] Optionally, forming the second photoactive layer includes:

[0014] A solution comprising the first material is spin-coated onto the first photoactive layer located in the second pixel region to combine the first material and the first photoactive layer to form the second photoactive layer.

[0015] Optionally, the photoresponse band of the first photoactive layer is greater than that of the second photoactive layer, and the first halogen element includes chlorine or bromine.

[0016] Optionally, the photoresponse band of the first photoactive layer is smaller than that of the second photoactive layer, and the first halogen element includes iodine.

[0017] Optionally, the plurality of pixel regions further include a third pixel region, wherein the first photoactive layer is formed in the third pixel region, and the first mask layer further covers the first photoactive layer located in the third pixel region;

[0018] The method further includes:

[0019] Remove the first mask layer located in the third pixel region;

[0020] A second mask layer is formed in the second pixel region, the second mask layer at least covering the second photoactive layer;

[0021] A third photoactive layer is formed by combining the first photoactive layer located in the third pixel region with a second material. The photoresponse bands of the third photoactive layer, the second photoactive layer, and the first photoactive layer are different. The second material includes a second halogen element, and the photoresponse band of the first photoactive layer is adjusted to the photoresponse band of the third photoactive layer using the second halogen element.

[0022] Optionally, forming the third photoactive layer includes:

[0023] The first photoactive layer located in the third pixel region is annealed in a vapor containing the second material to combine the second material and the first photoactive layer to form a third photoactive layer.

[0024] Optionally, forming the third photoactive layer includes:

[0025] A solution comprising the second material is spin-coated onto the first photoactive layer located in the third pixel region to combine the second material and the first photoactive layer to form a third photoactive layer.

[0026] Optionally, the photoresponse band of the first photoactive layer is located between the photoresponse band of the second photoactive layer and the photoresponse band of the third photoactive layer, and the first halogen element includes one of chlorine and iodine, and the second halogen element includes the other of chlorine and iodine.

[0027] Optionally, the photoresponse band of the first photoactive layer is greater than the photoresponse band of the second photoactive layer and greater than the photoresponse band of the third photoactive layer, and the first halogen element is one of bromine and chlorine, and the second halogen element is the other of bromine and chlorine.

[0028] This application provides an image sensor, which includes a plurality of pixel units, wherein the plurality of pixel units include at least a first pixel unit and a second pixel unit, the first pixel unit includes a first photoactive layer, and the second pixel unit includes a second photoactive layer;

[0029] The first pixel unit and the second pixel unit are manufactured using the manufacturing method described above.

[0030] Optionally, the plurality of pixel units further include a third pixel unit, the third pixel unit including a third photoactive layer;

[0031] The third pixel unit is manufactured using the above-described manufacturing method.

[0032] This application provides a method for manufacturing an image sensor. The image sensor includes multiple pixel regions, including at least a first pixel region and a second pixel region. Different pixel regions can form pixel units with different light response bands. The method includes: forming a first photoactive layer in the multiple pixel regions. The first photoactive layer includes a perovskite material. The band gap of the first photoactive layer is adjustable to facilitate the subsequent formation of other photoactive layers with different light response bands from the first photoactive layer. A first mask layer is formed over multiple pixel regions excluding the second pixel region. This first mask layer at least covers the first photoactive layer located in the first pixel region, thus exposing the first photoactive layer in the second pixel region. A second photoactive layer is formed by bonding the first photoactive layer located in the second pixel region with a first material. The first and second photoactive layers have different light response bands. The first material includes a first halogen element. The first halogen element is used to adjust the light response band of the first photoactive layer to match that of the second photoactive layer. In other words, the first material can be used to adjust the light response band of the first photoactive layer to match that of the second photoactive layer, making it relatively easy to adjust the light response band of the photoactive layer. This allows for the formation of multiple photoactive layers with different light response bands using a simple manufacturing process. Furthermore, selective light response is achieved using the first and second photoactive layers, eliminating the need for filtering with a Bayer color filter array and avoiding the poor imaging results caused by defects in Bayer color filter arrays. Based on this, this application achieves the simultaneous formation of photoactive layers with different light response bands using a simple manufacturing process by forming a first photoactive layer of perovskite material and adjusting the first photoactive layer to a second photoactive layer using a first material. The photoactive layers are then used to selectively respond to different light response bands, thereby improving the imaging color effect. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a top view schematic diagram of an image sensor provided in an embodiment of this application;

[0035] Figure 2 This is a schematic diagram of the optical response bands of various photoactive layers provided in the embodiments of this application;

[0036] Figure 3 This is a schematic diagram of a cross-sectional structure of a pixel unit provided in an embodiment of this application;

[0037] Figure 4 A schematic flowchart of a method for manufacturing an image sensor according to an embodiment of this application is shown;

[0038] Figures 5-11 A schematic diagram of the structure of an image sensor manufactured according to the manufacturing method of the image sensor provided in the embodiments of this application is shown. Detailed Implementation

[0039] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0040] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0041] This application is described in detail with reference to the schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not according to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0042] Current image sensors mainly use silicon as the photosensitive material. Although silicon's light response bands cover visible and near-infrared light, its narrow and non-tunable band gap prevents it from achieving selective light response for a specific light response band. For example, silicon cannot achieve amplified light response for red, green, and blue light. Therefore, it is necessary to use a Bayer color filter array (CFA) to filter different light response bands before using silicon to perform light response imaging on the filtered light response bands.

[0043] In other words, the imaging performance of current image sensors is affected by CFA. If the CFA has defects, it will affect the filtering of the light response band, which in turn will affect the light response of silicon, ultimately leading to problems such as color shift, distortion or unevenness in imaging.

[0044] Based on this, embodiments of this application provide a method for manufacturing an image sensor. The image sensor includes multiple pixel regions, at least including a first pixel region and a second pixel region. Different pixel regions can form pixel units with different light response bands. The method includes: forming a first photoactive layer in the multiple pixel regions. The first photoactive layer includes a perovskite material. The band gap of the first photoactive layer is adjustable, facilitating the subsequent formation of other photoactive layers with different light response bands from the first photoactive layer. A first mask layer is formed over multiple pixel regions excluding the second pixel region. This first mask layer at least covers the first photoactive layer located in the first pixel region, thus exposing the first photoactive layer in the second pixel region. A second photoactive layer is formed by bonding the first photoactive layer located in the second pixel region with a first material. The first and second photoactive layers have different light response bands. The first material includes a first halogen element. The first halogen element is used to adjust the light response band of the first photoactive layer to match that of the second photoactive layer. In other words, the first material can be used to adjust the light response band of the first photoactive layer to match that of the second photoactive layer, making it relatively easy to adjust the light response band of the photoactive layer. This allows for the formation of multiple photoactive layers with different light response bands using a simple manufacturing process. Furthermore, selective light response is achieved using the first and second photoactive layers, eliminating the need for filtering with a Bayer color filter array and avoiding the poor imaging results caused by defects in Bayer color filter arrays. Based on this, this application achieves the simultaneous formation of photoactive layers with different light response bands using a simple manufacturing process by forming a first photoactive layer of perovskite material and adjusting the first photoactive layer to a second photoactive layer using a first material. The photoactive layers are then used to selectively respond to different light response bands, thereby improving the imaging color effect.

[0045] To better understand the technical solution and effects of this application, the specific embodiments will be described in detail below with reference to the accompanying drawings.

[0046] See Figure 1 As shown, Figure 1 This is a top view schematic diagram of an image sensor provided in an embodiment of this application. The image sensor provided in this embodiment may include multiple pixel regions 100, which may be arranged in an array, and may include at least a first pixel region 110 and a second pixel region 120.

[0047] Each pixel region 100 can form a pixel unit. Different pixel units can have different light response wavelengths. For example, the first pixel region 110 can form a first pixel unit, and the second pixel region 120 can form a second pixel unit. The first pixel unit and the second pixel unit have different light response wavelengths. Each pixel unit includes a photoactive layer 210. Different pixel units have different light response wavelengths in their photoactive layers 210, thus achieving different light response wavelengths for different pixel units. For example, the first pixel unit includes a first photoactive layer 211, and the second pixel unit includes a second photoactive layer 212. The first photoactive layer 211 and the second photoactive layer 212 have different light response wavelengths, thus achieving different light response wavelengths for the first pixel unit and the second pixel unit.

[0048] In practical applications, considering that pixel sensors typically need to achieve spectral responses to multiple colors, such as red, green, and blue, the multiple pixel regions 100 can include a first pixel region 110, a second pixel region 120, and a third pixel region 130. The third pixel region 130 can form a third pixel unit, and the third pixel unit has a different light response wavelength than the first and second pixel units. The third pixel unit includes a third photoactive layer 213, and the third photoactive layer 213 has a different light response wavelength than the first photoactive layer 211 and the second photoactive layer 212, thus achieving a different light response wavelength between the third pixel unit and the first and second pixel units.

[0049] In the embodiments of this application, the photoactive layer 210 comprises a perovskite material, namely, the first photoactive layer 211, the second photoactive layer 212, and the third photoactive layer 213 all comprise perovskite materials. The perovskite material includes at least one halogen element, which can be chlorine (Cl), bromine (Br), or iodine (I). The optical response band of the perovskite material is adjusted by changing the proportion of at least one halogen element. In other words, by selecting a perovskite material as the material for the photoactive layer 210, the advantage of the tunable bandgap of the perovskite material can be utilized. By adjusting the proportion of the halogen element, multiple optical response bands for different pixel units can be achieved without the need to construct an additional Bayer color filter array or use a Bayer color filter array for filtering, thus avoiding the problem of poor imaging performance caused by the defects of the Bayer color filter array. Specifically, when the perovskite material includes only one halogen element, the response spectral range of the perovskite material can be adjusted by changing the halogen element, for example, by replacing chlorine with iodine. When a perovskite material contains two or more halogen elements, the optical response band of the perovskite material can be adjusted by changing the ratio between the halogen elements.

[0050] As an example, perovskite-type materials are APb(Br) x I 1-xAt wavelength 3, the photoresponse band of this material is 460-620 nm, meaning its response spectrum falls within the green light spectrum. Here, A represents a cation, which can be Cs (cesium ion), MA (methylammonium ion), or MA... a FA 1-a (Mixed formammonium ions and formamidinium ions, where a is an arbitrary constant between 0 and 1), FA b Cs 1-b (Formamine ions and cesium ions are mixed, and b is an arbitrary constant between 0.8 and 1), MA c FA 1-c-d Cs d (c is any constant between 0.8 and 1, d is any constant between 0 and 0.2), and x is any constant between 0.6 and 0.8.

[0051] As another example, perovskite-type materials are APb(Br) y I 1-y At wavelength 3, the photoresponse band of this material is 570-710 nm, meaning its response spectrum falls within the red light spectrum. Here, A represents a cation, which can be Cs (cesium ion), MA (methylammonium ion), or MA... a FA 1-a (Methylammonium ions and formamidinium ions are mixed, where a is an arbitrary constant between 0 and 1), FA b Cs 1-b (Formamine ions and cesium ions are mixed, and b is an arbitrary constant between 0.8 and 1), MA c FA 1-c-d Cs d (c is an arbitrary constant between 0.8 and 1, d is an arbitrary constant between 0 and 0.2), and y is an arbitrary constant between 0.3 and 0.5.

[0052] As another example, perovskite-type materials include APb(Cl) z Br w I 1-w-z At 3, the photoresponse wavelength of this material is 360-500 nm, meaning its response spectrum falls within the blue light spectrum. Here, A represents a cation, which can be Cs (cesium ion), MA (methylammonium ion), or MA... a FA 1-a (Methylammonium ions and formamidinium ions are mixed, where a is an arbitrary constant between 0 and 1), FA b Cs 1-b (Formamine ions and cesium ions are mixed, and b is an arbitrary constant between 0.8 and 1), MA c FA 1-c-d Cs d(c is an arbitrary constant between 0.8 and 1, d is an arbitrary constant between 0 and 0.2), z is an arbitrary constant between 0.2 and 0.6, and w is an arbitrary constant between 0.4 and 0.8.

[0053] refer to Figure 2 As shown, Figure 2 This is a schematic diagram of the photoresponse bands of various photoactive layers provided in the embodiments of this application. The perovskite material of the photoactive layer corresponding to line (1) is APb(Cl). z Br w I 1-w-z )3 can respond to blue light within ~480nm, and the perovskite material of the photoactive layer corresponding to line (2) is APb(Br) x I 1-x )3 can respond to green light within ~560nm, and the perovskite material of the photoactive layer corresponding to line (3) is APb(Br) y I 1-y APb(Br)3 can respond to red light within the range of ~690nm, by modulating APb(Br) x I 1-x 3. APb(Br) y I 1-y )3 and APb(Cl z Br w I 1-w-z In )3, w, x, y, and z can achieve flexible control of three color spectra, that is, by controlling the halogen elements and the ratio between the halogen elements, the light response band of the photoactive layer can be adjusted.

[0054] Therefore, by adjusting the ratio of Br and I, the photoresponse band can be adjusted between green and red light. Thus, when manufacturing photoactive layers 210 corresponding to green and red light photoresponse bands, the material with the adjusted Br and I ratio can be directly added to the process steps to achieve a simple, convenient, and rapid formation of photoactive layers 210 with different photoresponse bands. Similarly, by adding Cl or adjusting the Br and I ratio, the photoresponse band can be adjusted between green or red light and blue light, respectively. Thus, when manufacturing photoactive layers 210 corresponding to green, red, and blue light photoresponse bands, the material with the adjusted Br and I ratio or the addition of Cl can be directly added to the process steps to achieve a simple, convenient, and rapid formation of photoactive layers 210 with multiple photoresponse bands. In other words, by adjusting halogen elements and their ratios, the photoresponse band can be rapidly adjusted, significantly shortening the process time for manufacturing photoactive layers 210 with different photoresponse bands.

[0055] The photoactive layer of the image sensor provided in this application embodiment comprises a perovskite material, not silicon. Therefore, compared to image sensors using silicon as the photosensitive material, the requirements for the thin-film thinning process in the manufacturing process are lower, thereby reducing process costs. Furthermore, perovskite materials are easier to manufacture, offering advantages such as low cost and low heating temperature, making them suitable for mass production. Compared to silicon, perovskite materials have a higher absorption coefficient, requiring only a 300-400nm thin layer to almost completely absorb light. This results in a very short transport distance for photogenerated carriers, enabling fast light response and a thinner image sensor. Compared to image sensors using Bayer color filter arrays, the photoactive layer of the pixel unit in this application is not on the same plane as other transistors. Therefore, the photoactive layer can have a larger photosensitive area, receiving more light signals and thus improving the signal-to-noise ratio.

[0056] In the embodiments of this application, each pixel unit includes, in addition to the photoactive layer 210, a hole transport layer 220 and an electron transport layer 230, as shown in the reference. Figure 3 As shown, Figure 3 For along Figure 1 The pixel unit is obtained by cross-sectioning along the NN direction. The photoactive layer 210 is located between the hole transport layer 220 and the electron transport layer 230. The hole transport layer 220 and the electron transport layer 230 are used for hole transport and electron transport, respectively; their combination assists the photoactive layer 210 in outputting electrical signals. The positions of the hole transport layer 220 and the electron transport layer 230 relative to the photoactive layer 210 affect the signal transmission direction of the pixel unit; the signal transmission direction of the pixel unit is from the hole transport layer 220 through the photoactive layer 210 to the electron transport layer 230.

[0057] As an example, along the direction of light propagation, the sequence is hole transport layer 220, photoactive layer 210 to electron transport layer 230, so the signal transmission direction of the pixel unit is the same as the direction of light propagation.

[0058] As another example, along the direction of light propagation, the electron transport layer 230, photoactive layer 210 and hole transport layer 220 are arranged in sequence, so the signal transmission direction of the pixel unit is opposite to the direction of light propagation.

[0059] The electron transport layer 230 can be made of isomethyl [6,6]-phenyl-C61-butyrate (PCBM), titanium dioxide (TiO2), zinc oxide (ZnO), or fullerene (C 60 ) and its derivatives.

[0060] The hole transport layer 220 can be made of poly(3,4-ethylenedioxythiophene)polystyrene sulfonate (PEDOT:PSS), poly-3-hexylthiophene (P3HT), nickel oxide (NiO), 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD) or poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA).

[0061] In embodiments of this application, each pixel unit may further include two electrode layers, namely a first electrode layer 241 and a second electrode layer 242. The first electrode layer 241 and the second electrode layer 242 are respectively disposed on both sides of the photodiode formed by the electron transport layer 230, the photoactive layer 210, and the hole transport layer 220. The first electrode layer 241 and the second electrode layer 242 are respectively connected to the first metal line 251 and the second metal line 252, thereby enabling each pixel unit to be turned on by the bias voltage between the first metal line 251 and the second metal line 252.

[0062] Considering that the electrode layer that receives light first along the direction of light propagation should have better light transmittance, while the electrode layer that receives light later does not have a requirement for light transmittance since the light has already passed through the photoactive layer 210. The material of the electrode layer with better light transmittance can be indium tin oxide (ITO) or fluorine tin oxide (FTO).

[0063] As an example, see reference Figure 3 As shown, along the direction of light propagation, the layers are sequentially arranged as follows: second electrode layer 242, hole transport layer 220, photoactive layer 210, electron transport layer 230, and first electrode layer 241. First metal line 251 is electrically connected to first electrode layer 241, and second metal line 252 is electrically connected to second electrode layer 242. The material of first electrode layer 241 can be a metallic material, indium tin oxide (ITO), or fluorine-doped tin oxide (FTO), and the material of second electrode layer 241 can be indium tin oxide (ITO) or fluorine-doped tin oxide (FTO).

[0064] In embodiments of this application, the image sensor may include an isolation structure 260 and a conductive structure. The isolation structure 260 is located between adjacent pixel units and is used to isolate multiple pixel units. The conductive structure is located in the isolation structure 260 and is electrically connected to the pixel units, thereby enabling the output of response signals from the pixel units.

[0065] The isolation structure 260 can be an insulating material, such as silicon oxide or silicon nitride. The isolation structure 260 is disposed around the sidewall of the pixel unit. Along the direction of light propagation, the isolation structure 260 also includes an insulating layer 261, which is disposed on the surface of the bottommost electrode layer away from the photoactive layer 110, for protecting the pixel unit. (Reference) Figure 3 As shown, the bottommost electrode layer is the first electrode layer 241, and the insulating layer 261 can also be disposed on the side surface of the first electrode layer 241 away from the photoactive layer 110.

[0066] The conductive structure can be a metal wire. The conductive structure and the pixel unit are electrically connected, i.e., the metal wire and the electrode layer are electrically connected. The material of the conductive structure can be a highly conductive material, such as a metal, which can include gold, silver, copper, tungsten, molybdenum, and aluminum. The metal wire connected to the electrode layer can be placed in the isolation structure 260, thus enabling the output of the pixel unit's response signal. (Reference) Figure 3 As shown, the conductive structure may include a first metal line 251 and a second metal line 252. The first metal line 251 can penetrate the insulating layer 261 to achieve electrical connection with the first electrode layer 241. The second metal line 252 is located in the isolation structure 260 surrounding the sidewall of the pixel unit, and the second metal line 252 is electrically connected to the second electrode layer 242. The second metal line 252 can be led out from any one of the four sidewalls of the pixel unit, and the specific lead-out can be set according to the actual situation.

[0067] In embodiments of this application, each pixel unit may further include a microlens structure 270, which receives light first along the direction of light propagation. (See reference) Figure 3 As shown, the microlens structure 270 is disposed on the surface of the second electrode layer 252 away from the photoactive layer 210.

[0068] The pixel units included in the image sensor provided in this application embodiment can be manufactured using the image sensor manufacturing method provided in the following embodiment, that is, the first pixel unit, the second pixel unit and the third pixel unit can be manufactured using the image sensor manufacturing method provided in the following embodiment.

[0069] See Figure 4 The figure is a schematic flowchart of a method for manufacturing an image sensor according to an embodiment of this application.

[0070] The method for manufacturing an image sensor provided in this embodiment includes the following steps:

[0071] S101, a first photoactive layer is formed in multiple pixel areas.

[0072] In embodiments of this application, the image sensor includes multiple pixel regions 100, and a first photoactive layer 211 can be formed in multiple pixel regions. For example, the first photoactive layer 211 can be formed simultaneously in the first pixel region 110 and the second pixel region 120. Since the first photoactive layer 211 includes a perovskite material, the light response band of the first photoactive layer 211 can be adjusted by adjusting the halogen elements in the first photoactive layer 211.

[0073] In practical applications, before forming the first photoactive layer 211 in multiple pixel regions 100, an insulating layer 261 can be formed in the multiple pixel regions 100 first. Then, an electrode layer, such as a first electrode layer 241, is formed on one side surface of the insulating layer 261, forming a through-hole penetrating the insulating layer 261. A first metal line 251 is filled in the through-hole, and the first metal line 251 is electrically connected to the first electrode layer 241. One of an electron transport layer 230 and a hole transport layer 220 is then formed on the surface of the first electrode layer 241. A photoactive layer 210 is then formed on the surface of either the electron transport layer 230 or the hole transport layer 220, and the other of the electron transport layer 230 and the hole transport layer 220 is formed on the surface of the photoactive layer 210. A second electrode layer 242 is then formed on the surface of either the electron transport layer 230 or the hole transport layer 220. Finally, a microlens structure 270 is formed on the surface of the second electrode layer 242. Figure 3 As shown.

[0074] The insulating layer 261 can be formed using magnetron sputtering, physical vapor deposition, or chemical vapor deposition. The electron transport layer 230 and the hole transport layer 220 can be formed using spin coating, physical vapor deposition, or chemical vapor deposition. The photoactive layer 210 can be formed using spin coating, physical vapor deposition, or chemical vapor deposition.

[0075] S102, a first mask layer is formed over multiple pixel regions other than the second pixel region.

[0076] In the embodiments of this application, after the first photoactive layer 211 is formed in multiple pixel regions 100, the first photoactive layer 211 has a corresponding light response band. In order to adjust the light response band of the first photoactive layer 211, the halogen element or the proportion of halogen elements in the first photoactive layer 211 can be adjusted. To avoid adjusting the first photoactive layer 211 of all pixel regions 100, and instead limit the adjustment to the first photoactive layer 211 of specific pixel regions 100, a first mask layer 310 can be formed on the surface of the first photoactive layer 110 of the unadjusted pixel regions 100. For example, if the light response band of the first photoactive layer 211 of the second pixel region 120 is to be adjusted, a first mask layer 310 can be formed in multiple pixel regions 100 other than the second pixel region 120. That is, a first mask layer 310 is formed on the surface of the first photoactive layer 211 of the first pixel region 110, so as to cover the first photoactive layer 211 of the first pixel region 110 with the first mask layer 310, and avoid damage to the first photoactive layer 211 of the first pixel region 110 when adjusting the light response band of the first photoactive layer 211 of the second pixel region 120.

[0077] S103, using the first material to bond the first photoactive layer located in the second pixel region to form the second photoactive layer.

[0078] In the embodiments of this application, after covering the first photoactive layer 211 (excluding the second pixel region 120) with the first mask layer 310, the first photoactive layer 211 located in the second pixel region 120 can be bonded with a first material to form a second photoactive layer 212. The first photoactive layer 211 and the second photoactive layer 212 have different light response bands. The first material may include a first halogen element. The first halogen element is used to adjust the halogen element or the proportion of halogen elements in the first photoactive layer 211, thereby realizing the transformation of the first photoactive layer 211 into the second photoactive layer 212 by adjusting the first photoactive layer 211 with the first halogen element. That is, the light response band of the first photoactive layer 211 is ultimately transformed into the light response band of the second photoactive layer 212 by adjusting the first photoactive layer 211 with the first halogen element.

[0079] Specifically, the first material and the first photoactive layer 211 can be combined using an evaporation process or a spin coating process. For example, the first photoactive layer 211 located in the second pixel region 120 can be annealed in a vapor containing the first material to combine the first material and the first photoactive layer 211 to form a second photoactive layer 212.

[0080] For example, a solution comprising a first material is spin-coated onto the first photoactive layer 211 located in the second pixel region 120 to combine the first material and the first photoactive layer 211 to form a second photoactive layer 212.

[0081] In the embodiments of this application, the first photoactive layer 211 has different light response bands, and the first halogen element included in the first material is also different.

[0082] As one possible implementation, if the photoresponse band of the first photoactive layer 211 is greater than that of the second photoactive layer 211, the first halogen element includes Cl or Br, and the first material can be obtained by combining the first halogen element with the cation of any perovskite material. This is because when the photoresponse band of the first photoactive layer 211 is larger, the proportion of I is larger. Therefore, if the photoresponse band of the first photoactive layer 211 is to be reduced to the smaller photoresponse band of the second photoactive layer 211, the proportion of Cl or Br can be increased.

[0083] As an example, the light response band of the first photoactive layer 211 is red light, the light response band of the second photoactive layer 212 is green light, and the first halogen element is Br. That is, by increasing Br or increasing the proportion of Br, the light response band of the first photoactive layer 211 can be adjusted from red light to green light of the second photoactive layer 212.

[0084] As another example, the light response band of the first photoactive layer 211 is red light, the light response band of the second photoactive layer 212 is blue light, and the first halogen element is Cl. That is, by adding Cl, the light response band of the first photoactive layer 212 is adjusted from red light to blue light of the second photoactive layer 212.

[0085] As another example, the light response band of the first photoactive layer 211 is green light, the light response band of the second photoactive layer 212 is blue light, and the first halogen element is Cl. That is, by increasing Cl or increasing the proportion of Cl, the light response band of the first photoactive layer 211 is adjusted from green light to blue light of the second photoactive layer 212.

[0086] As another possible implementation, if the photoresponse band of the first photoactive layer 211 is smaller than that of the second photoactive layer 212, the first halogen element is I, and the first material can be obtained by combining the first halogen element with the cation of any perovskite material. This is because when the photoresponse band of the first photoactive layer 211 is smaller, the proportion of I is smaller. Therefore, if the photoresponse band of the first photoactive layer 211 is to be increased to the larger photoresponse band of the second photoactive layer 212, the proportion of I can be increased.

[0087] As an example, the light response band of the first photoactive layer 211 is blue light, the light response band of the second photoactive layer 212 is green light, and the first halogen element is I. That is, by increasing I or increasing the proportion of I, the light response band of the first photoactive layer 211 can be adjusted from blue light to green light of the second photoactive layer 212.

[0088] As another example, the light response band of the first photoactive layer 211 is blue light, the light response band of the second photoactive layer 212 is red light, and the first halogen element is I. That is, by increasing I or increasing the proportion of I, the light response band of the first photoactive layer 211 can be adjusted from blue light to red light of the second photoactive layer 212.

[0089] As another example, the light response band of the first photoactive layer 211 is green light, the light response band of the second photoactive layer 212 is red light, and the first halogen element is I. That is, by increasing I or increasing the proportion of I, the light response band of the first photoactive layer 211 is adjusted from green light to red light of the second photoactive layer 212.

[0090] In the embodiments of this application, after the first photoactive layer 211 of the second pixel region 120 is adjusted to the second photoactive layer 212 using the first material, the first mask layer 310 located in the first pixel region 110 is removed, and then an electron transport layer 230 or a hole transport layer 220 is formed on the first photoactive layer 211 and the second photoactive layer 212, and then a second electrode layer 242 is formed on the surface of the electron transport layer 230 or the hole transport layer 220.

[0091] In the embodiments of this application, considering that pixel sensors typically need to achieve spectral responses of multiple colors, such as red, green and blue, the multiple pixel regions 100 may include a first pixel region 110, a second pixel region 120 and a third pixel region 130.

[0092] Specifically, S101 involves forming a first photoactive layer 211 in the first pixel region 110, the second pixel region 120, and the third pixel region 130, as shown in the reference. Figure 5 As shown.

[0093] S102 specifically involves forming a first mask layer 310 in the first pixel region 110 and the third pixel region 130. The first mask layer 310 covers the first photoactive layer 211 located in the first pixel region 110 and the first photoactive layer 211 located in the third pixel region 130. (Refer to...) Figure 6 As shown.

[0094] S103 specifically involves: using the first material to bond the first photoactive layer 211 located in the second pixel region 120 to form a second photoactive layer 212. At this time, since the first mask layer 310 covers both the first photoactive layer 211 located in the first pixel region 110 and the first photoactive layer 211 located in the third pixel region 130, only the first photoactive layer 211 in the second pixel region 120 becomes the second photoactive layer 212. (Refer to...) Figure 7 As shown.

[0095] S104: Remove the first mask layer 310 located in the third pixel region 130. (Refer to...) Figure 8 As shown, this facilitates subsequent adjustment of the light response band of the first photoactive layer 211 located in the third pixel region 130, as shown in S105-S107.

[0096] S105: Form a second mask layer in the second pixel area.

[0097] In embodiments of this application, before or after removing the first mask layer 310 located in the third pixel region 130, a second mask layer 320 may be formed in the second pixel region 120. The second mask layer 320 at least covers the second photoactive layer 212. (Refer to...) Figure 9 As shown, the second photoactive layer 212 is protected from damage by the second mask layer 320 when the light response band of the first photoactive layer 211 located in the third pixel region 130 is subsequently adjusted.

[0098] S106: The third photoactive layer is formed by combining the first photoactive layer located in the third pixel region with the second material.

[0099] In embodiments of this application, after covering the first photoactive layer 211 of the first pixel region 110 and the second photoactive layer 212 of the second pixel region 120 with the first mask layer 310, the first photoactive layer 211 located in the third pixel region 130 can be bonded with the second material to form the third photoactive layer 213. (Refer to...) Figure 10 As shown, the photoresponse bands of the third photoactive layer 213, the first photoactive layer 211, and the second photoactive layer 212 are all different. The second material may include a second halogen element. By using the second halogen element to adjust the proportion of halogen elements in the first photoactive layer 211, the first photoactive layer 211 can be transformed into the third photoactive layer 213 by adjusting the first photoactive layer 211 with the second halogen element. In other words, the photoresponse band of the first photoactive layer 211 can be transformed into the photoresponse band of the third photoactive layer 213 by adjusting the first photoactive layer 211 with the second halogen element.

[0100] Specifically, the second material and the first photoactive layer 211 can be combined using an evaporation process or a spin coating process. For example, the first photoactive layer 211 located in the third pixel region 130 can be annealed in a vapor containing the second material to combine the second material and the first photoactive layer 211 to form a third photoactive layer 213.

[0101] For example, a solution comprising a second material is spin-coated onto the first photoactive layer 211 located in the third pixel region 130 to combine the second material and the first photoactive layer 211 to form a third photoactive layer 213.

[0102] In the embodiments of this application, the first photoactive layer 211 has different light response bands, and the first halogen element included in the first material and the second halogen element included in the second material are also different.

[0103] As one possible implementation, if the photoresponse band of the first photoactive layer 211 is between the photoresponse bands of the second photoactive layer 212 and the third photoactive layer 213, and the first halogen element is one of Cl and I, and the second halogen element is the other of Cl and I, the first material can be obtained by combining the first halogen element with the cation of any perovskite material, and the second material can be obtained by combining the second halogen element with the cation of any perovskite material. This is because when the photoresponse band of the first photoactive layer 211 is between the photoresponse bands of the second photoactive layer 212 and the third photoactive layer 213, the halogen element is mainly Br. Therefore, to reduce or increase the photoresponse band of the first photoactive layer 211, the proportion of Cl or I can be increased.

[0104] As an example, the photoresponse band of the first photoactive layer 211 is green, the photoresponse band of the second photoactive layer 212 is red, and the photoresponse band of the third photoactive layer 213 is blue. The first halogen element is I, meaning that by increasing I or increasing the proportion of I, the photoresponse band of the first photoactive layer 211 is adjusted from green to red, the photoresponse band of the second photoactive layer 212. The second halogen element is Cl, meaning that by increasing Cl or increasing the proportion of Cl, the photoresponse band of the first photoactive layer 211 is adjusted from green to blue, the photoresponse band of the third photoactive layer 213.

[0105] As another example, the photoresponse band of the first photoactive layer 211 is green, the photoresponse band of the second photoactive layer 212 is blue, and the photoresponse band of the third photoactive layer 213 is red. The first halogen element is Cl, meaning that by increasing Cl or increasing the proportion of Cl, the photoresponse band of the first photoactive layer 211 is adjusted from green to blue, the photoresponse band of the second photoactive layer 212. The second halogen element is I, meaning that by increasing I or increasing the proportion of I, the photoresponse band of the first photoactive layer 211 is adjusted from green to red, the photoresponse band of the third photoactive layer 213.

[0106] Therefore, when the light response band of the first photoactive layer 211 is between the light response band of the second photoactive layer 212 and the light response band of the third photoactive layer 213, the first photoactive layer 211 is usually green. When the first photoactive layer 211 is adjusted to the second photoactive layer 212, the first material only needs to include one of Cl or I. When the first photoactive layer 211 is adjusted to the third photoactive layer 213, the second material only needs to include the other of Cl or I. That is, it is relatively easy to adjust the first photoactive layer 211 to the second photoactive layer 212 and the third photoactive layer 213, and the process is simpler.

[0107] As another possible implementation, if the photoresponse band of the first photoactive layer 211 is greater than that of the second photoactive layer 212 and the third photoactive layer 213, the first halogen element is one of Cl and Br, and the second halogen element is the other of Cl and Br. The first material can be obtained by combining the first halogen element with the cation of any perovskite material, and the second material can be obtained by combining the second halogen element with the cation of any perovskite material. This is because when the photoresponse band of the first photoactive layer 211 is greater than that of both the second and third photoactive layers 212, the halogen element is mainly I. Therefore, to reduce the photoresponse band of the first photoactive layer 211, the proportion of Cl or Br can be increased.

[0108] As an example, the photoresponse band of the first photoactive layer 211 is red light, the photoresponse band of the second photoactive layer 212 is green light, and the photoresponse band of the third photoactive layer 213 is blue light. The first halogen element is Br, meaning that by increasing Br or increasing the proportion of Br, the photoresponse band of the first photoactive layer 211 is adjusted from red light to green light, the photoresponse band of the second photoactive layer 212. The second halogen element is Cl, meaning that by increasing Cl or increasing the proportion of Cl, the photoresponse band of the first photoactive layer 211 is adjusted from red light to blue light, the photoresponse band of the third photoactive layer 213.

[0109] As another example, the photoresponse band of the first photoactive layer 211 is red light, the photoresponse band of the second photoactive layer 212 is blue light, and the photoresponse band of the third photoactive layer 213 is green light. The first halogen element is Cl, meaning that by increasing Cl or increasing the proportion of Cl, the photoresponse band of the first photoactive layer 211 is adjusted from red light to blue light, the photoresponse band of the second photoactive layer 212. The second halogen element is Br, meaning that by increasing Br or increasing the proportion of Br, the photoresponse band of the first photoactive layer 211 is adjusted from red light to green light, the photoresponse band of the third photoactive layer 213.

[0110] S107: Remove the first mask layer located in the first pixel region and the second mask layer located in the second pixel region.

[0111] In the embodiments of this application, after adjusting the first photoactive layer 211 of the second pixel region 120 to the second photoactive layer 212 using a first material, and adjusting the first photoactive layer 211 of the third pixel region 130 to the third photoactive layer 213 using a second material, the first mask layer 310 located in the first pixel region 110 and the second mask layer 320 located in the second pixel region 120 are removed, referring to... Figure 11 As shown, an electron transport layer 230 or a hole transport layer 220 is then formed on the first photoactive layer 211, the second photoactive layer 212 and the third photoactive layer 213, and then a second electrode layer 242 is formed on the surface of the electron transport layer 230 or the hole transport layer 220.

[0112] In practical applications, the materials of the first mask layer and the second mask layer can be the same, both being photoresist materials.

[0113] The following describes the manufacturing method of the image sensor provided in this application, using the photoresponse band of the first photoactive layer as green light, the photoresponse band of the second photoactive layer as red light, and the photoresponse band of the third photoactive layer as blue light. The first material is methylammonium iodide (MAI), and the second material is methylammonium chloride (MACl). The method involves annealing the first photoactive layer in a vapor formed from the first or second material to form the second and third photoactive layers. The specific steps are as follows:

[0114] Step 1: In a nitrogen-filled glove box, using MAI (99.5%), MABr (99.9%), FABr (99.5%), FAI (99.5%), CsBr (99.5%), CsI (99.5%), PbBr2 (99.9%), and PbI2 (99.99%) as raw materials, and a DMF / DMSO mixed solution (4:1 to 3:1) as the solvent, prepare a 1-1.3 M green light-responsive APb(Br) solution. x I 1-x 3. The perovskite precursor solution was stirred with a magnetic stirrer at 20-60℃ for 30-40 minutes.

[0115] Step 2: Grow an insulating layer of silicon oxide or silicon nitride on the wafer surface using physical vapor deposition or chemical vapor deposition processes.

[0116] Step 3: Form a through hole in the insulating layer, and fill the through hole with a conductive metal material to form a first metal wire, which is then connected to the subsequently grown first electrode layer.

[0117] Step 4: Deposit the first electrode layer on the surface of the above insulating film using a physical vapor deposition process.

[0118] Step 5: Deposit an electron transport layer or hole transport layer on the first electrode layer using physical vapor deposition or spin coating.

[0119] Step 6: Use APb(Br) with a light response band of green light. x I 1-x 3. The perovskite precursor solution is dropped onto the electron transport layer or hole transport layer, and a spin coating process is used to form a film (spin coating speed 4000-5000 rpm, time 30-35 s, 400-800 μL of toluene is added as an anti-solvent at the 8th-10th second of spin coating, and the drop is completed in 1-2 seconds). After that, it is annealed to form a green light responsive perovskite film (annealing at 50-60℃ for 1-2 min, and then annealing at 80-100℃ for 3-5 min).

[0120] Step 7: Using photolithography, cover the first mask layer, i.e., the green light response area and the blue light response area, on the surface of the first pixel area and the third pixel area in the multiple pixel areas, and expose the second pixel area, i.e., the red light response area.

[0121] Step 8: Use APb(Br) with a light response band of green light. x I 1-x 3. The perovskite film was annealed at 150-160℃ in a MAI vapor atmosphere. After annealing, the photoresist was removed and the film was cleaned with isopropanol solution. The photoresponse band was green APb(Br) x I 1-x )3 and the optical response band is red light APb(Br y I 1-y 3. Perovskite film surface.

[0122] Step 9: Using photolithography, cover the first pixel region with a first mask layer and the second pixel region with a second mask layer in the multiple pixel regions. That is, cover the surfaces of the green light response region and the red light response region with photoresist, and expose the third pixel region, that is, expose the blue light response region.

[0123] Step 10: The APb(Br) light with a green light response band... x I 1-x 3) The perovskite film was annealed at 150-160℃ in a MACl vapor atmosphere. After annealing, the photoresist was removed and the APb(Br) film with a green light response band was cleaned with isopropanol solution. x I 1-x 3. APb(Br) has a photoresponse wavelength of red light. y I 1-y )3 and APb(Cl) with a photoresponse wavelength of blue light z Br w I 1-w-z3. Perovskite film surface.

[0124] Step 11: Using physical vapor deposition or spin coating processes, APb(Br) in the green light response band is coated with... x I 1-x )3. Deposit a hole transport layer or an electron transport layer on it.

[0125] Step 12: Deposit a second electrode layer on the hole transport layer or electron transport layer using a physical vapor deposition process.

[0126] Step 13: Etch the thin film in different pixel areas onto the wafer surface to separate each pixel unit.

[0127] Step 14: Fill the etched area with insulating material such as silicon oxide or silicon nitride to form an isolation structure. Form a through hole in the isolation structure and fill the through hole with a conductive metal material to form a second metal line. The second metal line is connected to the second electrode layer in step 12.

[0128] Step 15: A microlens structure is formed at the top of the second electrode layer in step 12 and the isolation structure in step 14.

[0129] The following describes the manufacturing method of the image sensor provided in this application, using the photoresponse band of the first photoactive layer as green light, the photoresponse band of the second photoactive layer as red light, and the photoresponse band of the third photoactive layer as blue light. The first material is methylammonium iodide (MAI), and the second material is methylammonium chloride (MACl). The method involves spin-coating the first photoactive layer in an isopropanol solution formed from the first or second material to form the second and third photoactive layers. The specific steps are as follows:

[0130] Step 1: In a nitrogen-filled glove box, using MAI (99.5%), MABr (99.9%), FABr (99.5%), FAI (99.5%), CsBr (99.5%), CsI (99.5%), PbBr2 (99.9%), and PbI2 (99.99%) as raw materials, and a DMF / DMSO mixed solution (4:1 to 3:1) as the solvent, prepare a 1-1.3 M green light-responsive APb(Br) solution. x I 1-x 3. The perovskite precursor solution was stirred with a magnetic stirrer at 20-60℃ for 30-40 minutes.

[0131] Step 2: Grow an insulating layer of silicon oxide or silicon nitride on the wafer surface using physical vapor deposition or chemical vapor deposition processes.

[0132] Step 3: Form a through hole in the insulating layer, and fill the through hole with a conductive metal material to form a first metal wire, which is then connected to the subsequently grown first electrode layer.

[0133] Step 4: Deposit the first electrode layer on the surface of the above insulating film using a physical vapor deposition process.

[0134] Step 5: Deposit an electron transport layer or hole transport layer on the first electrode layer using physical vapor deposition or spin coating.

[0135] Step 6: Use APb(Br) with a light response band of green light. x I 1-x 3. The perovskite precursor solution is dropped onto the electron transport layer or hole transport layer, and a spin coating process is used to form a film (spin coating speed 4000-5000 rpm, time 30-35 s, 400-800 μL of toluene is added as an anti-solvent at the 8th-10th second of spin coating, and the drop is completed in 1-2 seconds). After that, it is annealed to form a green light responsive perovskite film (annealing at 50-60℃ for 1-2 min, and then annealing at 80-100℃ for 3-5 min).

[0136] Step 7: Using photolithography, cover the first mask layer, i.e., the green light response area and the blue light response area, on the surface of the first pixel area and the third pixel area in the multiple pixel areas, and expose the second pixel area, i.e., the red light response area.

[0137] Step 8: Drop the isopropanol solution of MAI onto APb(Br) light, which has a green light response band. x I 1-x 3. After immersing the perovskite film surface for 1–10 seconds, spin-coat the solution using a spin coater and spin dry. Then anneal at 80–100℃ for 3–5 minutes. After annealing, remove the photoresist and clean the APb(Br) film with the green light response band using isopropanol solution. x I 1-x 3. APb(Br) has a photoresponse wavelength of red light. y I 1-y )3 and APb(Cl) with a photoresponse wavelength of blue light z Br w I 1-w-z 3. Perovskite film surface.

[0138] Step 9: Using photolithography, cover the first pixel region with a first mask layer and the second pixel region with a second mask layer in the multiple pixel regions. That is, cover the surfaces of the green light response region and the red light response region with photoresist, and expose the third pixel region, that is, expose the blue light response region.

[0139] Step 10: Drop a solution of MACl in isopropanol onto an APb(Br) group whose photoresponse wavelength is green. x I 1-x3. After immersing the perovskite film surface for 1–10 seconds, spin-coat the solution using a spin coater and spin dry. Then anneal at 80–100℃ for 3–5 minutes. After annealing, remove the photoresist and clean the APb(Br) film with the green light response band using isopropanol solution. x I 1-x )3 and APb(Br) with a photoresponse wavelength of red light y I 1-y 3. Perovskite film surface.

[0140] Step 11: Using physical vapor deposition or spin coating processes, APb(Br) in the green light response band is coated with... x I 1-x )3. Deposit a hole transport layer or an electron transport layer on it.

[0141] Step 12: Deposit a second electrode layer on the hole transport layer or electron transport layer using a physical vapor deposition process.

[0142] Step 13: Etch the thin film in different pixel areas onto the wafer surface to separate each pixel unit.

[0143] Step 14: Fill the etched area with insulating material such as silicon oxide or silicon nitride to form an isolation structure. Form a through hole in the isolation structure and fill the through hole with a conductive metal material to form a second metal line. The second metal line is connected to the second electrode layer in step 12.

[0144] Step 15: A microlens structure is formed at the top of the second electrode layer in step 12 and the isolation structure in step 14.

[0145] The following describes another method for manufacturing an image sensor provided in this application, using the photoresponse band of the first photoactive layer as green light, the photoresponse band of the second photoactive layer as red light, and the photoresponse band of the third photoactive layer as blue light. The first material is methylammonium iodide (MAI), and the second material is methylammonium chloride (MACl). The method involves annealing the first photoactive layer in a vapor formed from the first or second material to form the second and third photoactive layers. The specific steps are as follows:

[0146] Step 1: A thick insulating layer of silicon oxide or silicon nitride is grown on the wafer surface using physical vapor deposition or chemical vapor deposition processes. This thickness can include all thin films except for the microlens structure.

[0147] Step 2: Multiple pixel grids are formed on the insulating layer using photolithography. Each pixel grid corresponds to a pixel region. All thin films other than the microlens structure are grown inside the pixel grid using physical vapor deposition or chemical vapor deposition.

[0148] Step 3: Form a via on the insulating layer at the bottom of each pixel grid, and fill the via with a conductive metal material to form a first metal line, which connects to the subsequently grown first electrode layer.

[0149] Step 4: Deposit the first electrode layer on the surface of the above insulating film using a physical vapor deposition process.

[0150] Step 5: Deposit an electron transport layer or a hole transport layer on the first electrode layer using a physical vapor deposition process.

[0151] Step 6: Using physical vapor deposition or chemical vapor deposition, grow APb(Br) with a green light response band on the surface of the electron transport layer or hole transport layer. x I 1-x 3. Perovskite thin film.

[0152] Step 7: Using photolithography, cover the first mask layer, i.e., the green light response area and the blue light response area, on the surface of the first pixel area and the third pixel area in the multiple pixel areas, and expose the second pixel area, i.e., the red light response area.

[0153] Step 8: Use APb(Br) with a light response band of green light. x I 1-x 3. The perovskite film was annealed at 150-160℃ in a MAI vapor atmosphere or spin-coated by immersion in an isopropanol solution of MAI. After annealing, the photoresist was removed and the film was cleaned with an isopropanol solution. The photoresponse band was green APb(Br) x I 1-x )3 and the optical response band is red light APb(Br y I 1-y 3. Perovskite film surface.

[0154] Step 9: Using photolithography, cover the first pixel region with a first mask layer and the second pixel region with a second mask layer in the multiple pixel regions. That is, cover the surfaces of the green light response region and the red light response region with photoresist, and expose the third pixel region, that is, expose the blue light response region.

[0155] Step 10: The APb(Br) light with a green light response band... x I 1-x 3. The perovskite film was annealed in a MACl vapor atmosphere at 150-160℃ or spin-coated by immersion in an isopropanol solution of MACl. After annealing, the photoresist was removed and the APb(Br) film with a green light response band was cleaned with an isopropanol solution. x I 1-x 3. APb(Br) has a photoresponse wavelength of red light. y I 1-y )3 and APb(Cl) with a photoresponse wavelength of blue light z Brw I 1-w-z 3. Perovskite film surface.

[0156] Step 11: Using physical vapor deposition (PVD) to deposit APb(Br) in the green light response band. x I 1-x )3. Deposit a hole transport layer or an electron transport layer on it.

[0157] Step 12: Deposit a second electrode layer on the hole transport layer or electron transport layer using a physical vapor deposition process.

[0158] Step 13: The insulating layer of the pixel grid sidewall forms an isolation structure, a through hole is formed in the isolation structure, and a second metal line is formed by filling the through hole with a conductive metal material. The second metal line is connected to the second electrode layer in step 12.

[0159] Step 14: A microlens structure is formed at the top of the second electrode layer in step 12 and the isolation structure in step 14.

[0160] Therefore, the photoactive layer provided in this application is a perovskite material, which can be easily prepared using a solution method, offering advantages such as low cost and low heating temperature, making it suitable for mass production. Compared to crystalline silicon, perovskite materials have a higher absorption coefficient; a thin layer of only 300-400 nm is sufficient to almost completely absorb light. This results in a very short transport distance for photogenerated carriers, leading to a rapid photoresponse and a very thin image sensor. The thickness, grain size, and crystallinity of the photoactive layer can be modified by adjusting the precursor concentration, thereby achieving spectral modulation of the image sensor and enabling the response of the three primary colors (red, green, and blue) without the need for an additional CFA.

[0161] The various embodiments in this specification are described in a progressive manner. The same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on describing the differences from other embodiments.

[0162] The above description is merely a preferred embodiment of this application. Although this application has disclosed preferred embodiments above, it is not intended to limit this application. Any person skilled in the art can make many possible variations and modifications to the technical solutions of this application using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of this application. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall still fall within the protection scope of the technical solutions of this application.

Claims

1. A method for manufacturing an image sensor, characterized in that, The image sensor includes multiple pixel regions, and the multiple pixel regions include at least a first pixel region and a second pixel region; The method includes: A first photoactive layer is formed in a plurality of pixel regions, the first photoactive layer comprising a perovskite material; A first mask layer is formed over a plurality of pixel regions other than the second pixel region, the first mask layer at least covering the first photoactive layer located in the first pixel region; A second photoactive layer is formed by combining the first photoactive layer located in the second pixel region with the first material; The first photoactive layer and the second photoactive layer have different photoresponse bands. The first material includes a first halogen element, and the photoresponse band of the first photoactive layer is adjusted to the photoresponse band of the second photoactive layer using the first halogen element.

2. The method according to claim 1, characterized in that, The formation of the second photoactive layer includes: The first photoactive layer located in the second pixel region is annealed in a vapor containing the first material to combine the first material and the first photoactive layer to form the second photoactive layer.

3. The method according to claim 1, characterized in that, The formation of the second photoactive layer includes: A solution comprising the first material is spin-coated onto the first photoactive layer located in the second pixel region to combine the first material and the first photoactive layer to form the second photoactive layer.

4. The method according to any one of claims 1-3, characterized in that, The photoresponse band of the first photoactive layer is greater than that of the second photoactive layer, and the first halogen element includes chlorine or bromine.

5. The method according to any one of claims 1-3, characterized in that, The photoresponse band of the first photoactive layer is smaller than that of the second photoactive layer, and the first halogen element includes iodine.

6. The method according to claim 1, characterized in that, The plurality of pixel regions further include a third pixel region, wherein the first photoactive layer is formed in the third pixel region, and the first mask layer further covers the first photoactive layer located in the third pixel region; The method further includes: Remove the first mask layer located in the third pixel region; A second mask layer is formed in the second pixel region, the second mask layer at least covering the second photoactive layer; A third photoactive layer is formed by combining the first photoactive layer located in the third pixel region with a second material. The photoresponse bands of the third photoactive layer, the second photoactive layer, and the first photoactive layer are different. The second material includes a second halogen element, and the photoresponse band of the first photoactive layer is adjusted to the photoresponse band of the third photoactive layer using the second halogen element.

7. The method according to claim 6, characterized in that, The formation of the third photoactive layer includes: The first photoactive layer located in the third pixel region is annealed in a vapor containing the second material to combine the second material and the first photoactive layer to form a third photoactive layer.

8. The method according to claim 6, characterized in that, The formation of the third photoactive layer includes: A solution comprising the second material is spin-coated onto the first photoactive layer located in the third pixel region to combine the second material and the first photoactive layer to form a third photoactive layer.

9. The method according to any one of claims 6-8, characterized in that, The photoresponse band of the first photoactive layer is located between the photoresponse band of the second photoactive layer and the photoresponse band of the third photoactive layer. The first halogen element includes one of chlorine and iodine, and the second halogen element includes the other of chlorine and iodine.

10. The method according to any one of claims 6-8, characterized in that, The photoresponse band of the first photoactive layer is greater than that of the second photoactive layer and also greater than that of the third photoactive layer. The first halogen element is one of bromine and chlorine, and the second halogen element is the other of bromine and chlorine.

11. An image sensor, characterized in that, The image sensor includes a plurality of pixel units, and the plurality of pixel units include at least a first pixel unit and a second pixel unit. The first pixel unit includes a first photoactive layer; the second pixel unit includes a second photoactive layer. The first pixel unit and the second pixel unit are manufactured using the manufacturing method according to any one of claims 1-10.

12. The image sensor according to claim 11, characterized in that, The plurality of pixel units further includes a third pixel unit, the third pixel unit including a third photoactive layer; the third pixel unit is manufactured using the manufacturing method of any one of claims 6-10.

Images