Real-time ultraviolet radiation monitor based on narrow-band photoelectric detector

Abstract

The invention belongs to the technical field of ultraviolet radiation meters, and particularly discloses a real-time ultraviolet radiation monitor based on a narrow-band photoelectric detector, the ultraviolet radiation monitor comprises an ultraviolet sensing module, a signal processing module and a display module, the ultraviolet sensing module comprises a self-powered ultraviolet narrow-band photoelectric detector, and the signal processing module comprises a signal processing module and a display module. The self-powered ultraviolet narrow-band photoelectric detector comprises a transmission layer, an absorption layer and a first contact electrode which are sequentially arranged from bottom to top, and the transmission layer is further provided with a second contact electrode. The transmission layer is a wide bandgap semiconductor with an absorption cut-off edge of 350-400 nanometers, and the absorption layer is an all-inorganic copper halide polycrystalline thin film, an all-inorganic copper halide pseudo-single crystal thin film or an all-inorganic copper halide micron wire with an absorption cut-off edge of 280-320 nanometers. The problems that an existing ultraviolet radiation monitor is high in price, needs to be matched with an additional optical filter, is large in size and the like are solved.

Description

Technical Field

[0001] This invention belongs to the field of ultraviolet radiometer technology, specifically relating to a real-time ultraviolet radiation monitoring instrument based on a narrowband photodetector. Background Technology

[0002] Due to the blocking effect of the ozone layer, only UVB and UVA rays from solar radiation reach the Earth's surface. Everyone on Earth is exposed to UVA and UVB ultraviolet radiation from the sun. Moderate ultraviolet radiation promotes vitamin D synthesis; however, excessive ultraviolet radiation can cause irreversible damage to human skin, eyes, and the immune system. When the ultraviolet index (UVI) exceeds 3, people should take appropriate sun protection measures to avoid the health risks associated with ultraviolet radiation. Therefore, in order to realize ultraviolet radiation monitoring instruments with strong anti-interference capabilities, it is crucial to develop narrowband ultraviolet photodetectors that selectively detect specific wavelengths of UVB to UVA.

[0003] Currently, the main strategy for achieving narrowband ultraviolet detection is to combine broadband detectors with optical filters, which undoubtedly increases the size, cost, and complexity of the device. Narrowband ultraviolet detection can also be achieved by depositing metal particles, such as aluminum or magnesium, on the material surface and utilizing the surface plasmon resonance effect. However, these metals are easily oxidized in air, which reduces the detection performance and stability of the device. In recent years, the CCN strategy has attracted much attention because it can utilize the intrinsic properties of materials to achieve narrowband detection. Using the CCN strategy, researchers have developed a spectrally tunable MAPbI x Br 3−x Self-powered narrowband photodetectors (J. Wang, S. Xiao, W. Qian, K. Zhang, J. Yu, X. Xu, G. Wang, S. Zheng, and S. Yang, Adv. Mater. 33, 2005557 (2022)). However, traditional perovskites are limited in their application in ultraviolet narrowband detection due to lead toxicity, instability, and inherent narrow bandgap.

[0004] Perovskite-derived all-inorganic copper halides possess advantages such as environmental friendliness, low cost, direct wide bandgap, long carrier lifetime, and excellent stability, making them uniquely advantageous in environmentally friendly and highly stable ultraviolet narrowband detectors. Furthermore, by combining them with a transport layer to create a built-in electric field, the separation and transport of photogenerated carriers can be promoted, enabling self-powered, high-performance ultraviolet narrowband photodetectors. However, existing perovskite-derived all-inorganic copper halides suffer from low responsivity, requiring further optimization. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the purpose of this application is to provide a real-time ultraviolet radiation monitor based on a narrowband photodetector, which solves the problems of high price, need for additional filters, and large size of existing ultraviolet radiation monitors.

[0006] To achieve the above objectives, this application provides a real-time ultraviolet radiation monitor based on a narrowband photodetector, comprising an ultraviolet sensing module, a signal processing module, and a display module, wherein: The ultraviolet sensing module includes a self-powered ultraviolet narrowband photodetector, which includes a transmission layer, an absorption layer and a first contact electrode arranged sequentially from bottom to top, and a second contact electrode is also arranged on the transmission layer. The transport layer is a wide bandgap semiconductor with an absorption cutoff edge of 350~400 nm, and the absorption layer is an all-inorganic copper halide polycrystalline thin film, an all-inorganic copper halide quasi-single crystal thin film, or an all-inorganic copper halide microwire with an absorption cutoff edge of 280~320 nm. The preparation method of all-inorganic copper halide quasi-single crystal thin film is as follows: All-inorganic copper halide polycrystalline thin film is subjected to hot pressing annealing treatment to obtain all-inorganic copper halide quasi-single crystal thin film.

[0007] The ultraviolet sensing module is the core component, consisting of a self-powered ultraviolet narrowband photodetector used to detect ultraviolet irradiation information in real time and convert the detected light signal into a photovoltage signal. Utilizing the strong ultraviolet light absorption capability of all-inorganic copper halide for incident light with wavelengths shorter than the absorption cutoff edge, the strong recombination of photogenerated carriers on the surface defect states of the all-inorganic copper halide, the absorption cutoff edge of the transport layer at 350–400 nm, and the synergistic effect of the built-in electric field generated at the interface between the all-inorganic copper halide and the transport layer, the device can achieve self-powered selective detection of UVB–UVA band light without the need for a filter.

[0008] The absorption layer acts as an optical filter, absorbing incident light with wavelengths shorter than the absorption cutoff edge and utilizing surface charge to collect and narrow the light, preventing the generation of photocurrent. The transport layer is a wide bandgap semiconductor with an absorption cutoff edge of 350–400 nm; when the photon energy is less than the bandgap energy of the transport layer, no photocurrent can be generated. The transport and absorption layers can form a type II heterojunction, allowing the device to operate without a bias voltage by creating a built-in electric field.

[0009] Furthermore, the specific preparation method of the all-inorganic copper halide quasi-single crystal thin film is as follows: the upper side of the transport layer is hydrophilically treated to obtain a hydrophilic surface, and the all-inorganic copper halide polycrystalline thin film is prepared on the hydrophilic surface; A hydrophobic substrate is pressed onto an all-inorganic copper halide polycrystalline thin film, followed by hot-press annealing. After annealing, the film is cooled to room temperature and the remaining pressure is released. The hydrophobic substrate is then removed to obtain an all-inorganic copper halide quasi-single-crystal thin film, which is the absorber layer.

[0010] The hydrophobic substrate is mainly used to ensure that the quasi-single crystal film grows on the hydrophilic substrate as much as possible. When the hydrophobic substrate is peeled off after growth, it can prevent the quasi-single crystal film from being broken. The all-inorganic copper halide quasi-single crystal film is more tightly bonded to the transport layer, which is beneficial to reduce the interface resistance and enhance the transport of photogenerated carriers.

[0011] Moreover, the transport layer and the hydrophobic substrate form a spatial confinement effect, which significantly suppresses the growth of grains in the vertical direction. This results in the formation of large-sized, laterally oriented grains with high flatness in the all-inorganic copper halide quasi-single-crystal thin film, exhibiting quasi-single-crystal characteristics throughout the entire thickness range.

[0012] Furthermore, the hot pressing annealing process is as follows: the applied pressure is 120~180 MPa, the temperature is 30~200℃, and the annealing time is 0.5~2 hours.

[0013] Furthermore, after annealing, the temperature is first lowered to room temperature at a rate of 0.5~5℃ / h. After cooling is complete, the remaining pressure is released.

[0014] Furthermore, the absorption layer is a Cs3Cu2I5 polycrystalline thin film or a Cs3Cu2I5 quasi-single crystal thin film; or the absorption layer is one of CsCu2I3 microwires, Rb2CuCl3 microwires, or Rb2CuBr3 microwires.

[0015] Furthermore, the thickness of the absorption layer is 300 nanometers to 3 micrometers.

[0016] Furthermore, the first contact electrode and the absorption layer are in ohmic contact, such as an Au electrode, with a thickness of 30~100 nanometers.

[0017] Furthermore, the second contact electrode and the transport layer are in ohmic contact, such as an In electrode, with a thickness of 30~100 nanometers.

[0018] Furthermore, the thickness of the transport layer is 300 nanometers to 2000 nanometers.

[0019] Furthermore, the transport layer is GaN, ZnO, NiO, or TiO2.

[0020] Furthermore, the ultraviolet sensing module is connected to the signal processing module, and the signal processing module is connected to the display module via wireless transmission.

[0021] The signal processing module is connected to the ultraviolet sensing module to convert the photovoltage signal into ultraviolet power density and ultraviolet index information. Based on this information, real-time protection recommendations and the threshold time for causing Grade I and Grade II sunburn in people with skin types I to IV are obtained. The signal processing module is connected to the display module wirelessly, such as via Wi-Fi.

[0022] The display module can receive and display ultraviolet light power density, ultraviolet index, real-time protection recommendations, and the threshold time for causing grade I and grade II sunburn in people with skin types I to IV via Wi-Fi.

[0023] Furthermore, the signal processing module includes an analog-to-digital conversion submodule and a Wi-Fi transmission submodule, wherein: The analog-to-digital conversion submodule receives voltage signals from the ultraviolet sensor module and converts these signals into digital signals via a built-in analog-to-digital conversion circuit. It then calculates the corresponding ultraviolet power density and ultraviolet index based on a preset algorithm. Appropriate protection recommendations are then matched based on the ultraviolet index; and the threshold exposure time for causing grade I and grade II sunburn in individuals with skin types I-IV is determined based on the ultraviolet power density.

[0024] The Wi-Fi transmitting submodule is used to upload information such as ultraviolet power density, ultraviolet index, protection recommendations, and threshold exposure time obtained after analog-to-digital conversion to the display module via a low-power wireless communication protocol.

[0025] The display module is for terminal devices such as smartphones, tablets, or computers; the signal processing module is for microcontrollers such as ESP32-S3-DEV-KIT-NXR8.

[0026] The beneficial effects of this invention are as follows: (1) The ultraviolet sensing module described in this application does not require the addition of a filter, and can achieve selective response to the UVB~UVA band. It has strong anti-interference ability against visible light and UVC light, effectively simplifying the manufacturing process of the ultraviolet radiation monitor and reducing the size and cost of the ultraviolet radiation monitor.

[0027] (2) This application constructs a built-in electric field by combining an all-inorganic copper halide with a transport layer, and achieves effective separation and transport of photogenerated carriers under zero bias voltage, thereby realizing low power consumption, self-powered and high-performance ultraviolet narrowband detection.

[0028] (3) The excellent performance of the narrowband ultraviolet photodetector makes it easy to integrate with the low-energy-consumption and low-cost commercial ESP32-S3-DEV-KIT-NXR8 signal processing module as an ultraviolet sensing module, so as to realize accurate and rapid acquisition and processing of ultraviolet irradiation information.

[0029] (4) Compared with all-inorganic copper halide polycrystalline thin films, narrowband ultraviolet photodetectors use all-inorganic copper halide quasi-single-crystal thin films, which significantly improves the responsivity of the device while ensuring that the device can achieve narrowband ultraviolet light detection capability in the 280~375 nm band.

[0030] (5) The narrowband ultraviolet photodetector is used as an ultraviolet sensing module in the ultraviolet radiation monitoring instrument. The device can monitor the ultraviolet power density and ultraviolet index of indoor and outdoor light in real time and all day long. It can provide corresponding protection suggestions in real time based on the ultraviolet index. It can provide the threshold time for causing first-level and second-level sunburn in people with skin types I to IV in real time based on the ultraviolet power density.

[0031] This invention provides a new solution for real-time ultraviolet radiation monitoring instruments in terms of simplifying processes, reducing size, improving performance, reducing costs, and reducing power consumption. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a schematic diagram of the structure of a real-time ultraviolet radiation monitor based on a narrowband photodetector, provided in Embodiment 1 of this application. Figure 2 The response spectra of the narrowband photodetectors in Examples 1 and 2 under zero bias voltage; Figure 3 The photovoltage and ultraviolet power density of the narrowband photodetector in Example 1 ( P UV The relationship between the UV index (UVI) and the UV index; Figure 4 This is a screenshot of a mobile app taken under sunlight of the ultraviolet radiation monitoring instrument prepared in Example 1. Figure 5 The change in UVI of the ultraviolet radiation monitor prepared in Example 1 on January 6, 2025 (sunny day); Figure 6 The threshold exposure time for first- and second-degree sunburn in different skin types is shown by the ultraviolet radiation monitoring instrument prepared in Example 1.

[0034] The diagram is labeled as follows: 100. Real-time ultraviolet irradiation monitor, 110. Ultraviolet sensing module, 120. Signal processing module, 130. Display module; 1. Transmission layer, 2. All-inorganic copper halide absorption layer, 3. First contact electrode, 4. Second contact electrode. Detailed Implementation

[0035] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0036] Next, combined Figures 1-6 This application provides an example of a real-time ultraviolet radiation monitor based on a narrowband photodetector.

[0037] Figure 1 This is a schematic diagram of the structure of a real-time ultraviolet radiation monitor 100 based on a narrowband photodetector provided in an embodiment of this application, as shown below. Figure 1 As shown, the system includes an ultraviolet sensing module 110, a signal processing module 120, and a display module 130, wherein: Optionally, the ultraviolet sensing module 110 is connected to the signal processing module 120. The ultraviolet sensing module 110 consists of a self-powered ultraviolet narrowband photodetector, used to detect ultraviolet irradiation information in real time and convert the detected light signal into a photovoltage signal.

[0038] The self-powered ultraviolet narrowband photodetector can selectively detect ultraviolet light in the UVB-UVA band. It consists of four parts: a transport layer 1, an all-inorganic copper halide absorption layer 2, a first contact electrode 3, and a second contact electrode 4. The transport layer 1 is a wide-bandgap semiconductor with an absorption cutoff edge of 350-400 nm, such as GaN, ZnO, NiO, or TiO2, with a thickness of 300 nm to 2000 nm. The absorption layer 2 is an all-inorganic copper halide with an absorption cutoff edge of 280-320 nm, such as one of Cs3Cu2I5, CsCu2I3, Rb2CuCl3, and Rb2CuBr3, with a thickness of 300 nm to 3 μm. Cs3Cu2I5 is a polycrystalline thin film prepared by spin coating, vapor deposition, blade coating, or spray coating; or a quasi-single-crystal thin film prepared by spin coating combined with hot-pressing annealing. CsCu2I3, Rb2CuCl3, and Rb2CuBr3 are micrometer wires with a thickness of 300 nm to 2 μm. The first contact electrode 3 is on the absorption layer 2 and has an ohmic contact with the absorption layer 2, such as an Au electrode, with a thickness of 30 to 100 nm. The first contact electrode 4 is on the transport layer 1 and has an ohmic contact with the transport layer 1, such as an In electrode, with a thickness of 30 to 100 nm.

[0039] The signal processing module 120 converts the photovoltage signal into ultraviolet power density and ultraviolet index information. Based on this information, it obtains real-time protection recommendations and the threshold time for causing grade I and grade II sunburn in people with skin types I to IV. Simultaneously, the information is wirelessly transmitted to the display module 130 via Wi-Fi.

[0040] The display module 130 can receive and display ultraviolet light power density, ultraviolet index, real-time protection recommendations, and the threshold time for causing grade I and grade II sunburn in people with skin types I to IV via Wi-Fi in real time.

[0041] The preparation method and performance of the present invention are described below with reference to specific embodiments. Example 1

[0042] (1) Fabrication of ultraviolet sensing module, i.e. fabrication of self-powered ultraviolet narrowband photodetector. 1) The GaN transport layer 1 was cleaned and hydrophilicized. The GaN transport layer was prepared by hydride vapor phase epitaxy. The growth substrate was double-sided polished Al2O3. First, a 2-micrometer-thick undoped GaN was grown as a transition layer, and then a 1.5-micrometer-thick n-type GaN transport layer was grown. The GaN transport layer 1 was cut into small square pieces with a width of 3 mm and a length of 5 mm. Then, the GaN transport layer 1 was cleaned. First, it was rubbed with diluted detergent (Axe Brand Strong Detergent) for 1 minute, and then rinsed with tap water. Then, it was ultrasonically cleaned with acetone, ethanol and deionized water solution for 10 minutes each. After drying with high-purity nitrogen, it was ready for use. The cleaned GaN transport layer 1 was placed in an ultraviolet ozone cleaner with a power of 30 W and a treatment time of 15 minutes. After the treatment, the GaN transport layer 1 had a hydrophilic surface.

[0043] 2) The Cs3Cu2I5 absorber layer 2 was prepared by spin coating combined with hot pressing annealing. First, CsI and CuI were dissolved in a 3:2 molar ratio in a 1:1 volume mixture of DMF and DMSO, and the solution was magnetically stirred at 25°C for 12 hours until CsI and CuI were completely dissolved, yielding a precursor solution with a concentration of 0.5 mol / L. Next, the precursor solution was filtered through an organic nylon filter with a pore size of 0.22 micrometers. Then, 80 μL of precursor solution was dropped onto the center of the pre-treated GaN transport layer 1, and spin-coated at a low speed of 500 rpm for 5 seconds, followed by a high speed of 3000 rpm for 50 seconds. In the last 26 seconds, 120 μL of toluene was rapidly added to promote crystallization, finally yielding the Cs3Cu2I5 precursor film; A hydrophobic silicon substrate, polished side down, is pressed onto a grown Cs3Cu2I5 precursor film, with the edges of the two substrates strictly aligned to form a tightly fitted sandwich structure. The sandwich structure is then placed in a hot press at a pressure of 180 MPa and a temperature of 150 degrees Celsius. After a 2-hour hot-press annealing process, a cooling operation is performed first, followed by a depressurization operation, with a cooling rate of 0.5 degrees Celsius per hour. During this process, the pressure decreases as the temperature drops. After cooling is complete, the remaining pressure is slowly released, and finally, the silicon substrate is peeled off to obtain the Cs3Cu2I5 quasi-single-crystal thin film.

[0044] The method for preparing a hydrophobic silicon substrate is as follows: Using a dropper, add 10 mL of n-hexane solution to a 10 cm diameter glass dish. Then, using a pipette, add 10 μL of octadecyltrimethoxysilane solution. Gently shake the glass dish to mix the two solutions thoroughly. After cleaning the polished silicon substrate, immerse it in the glass dish for 10 minutes. Immediately remove it and place it in solutions containing n-hexane, n-hexane, acetone, and acetone, respectively, and shake for 10 seconds. After removal, immediately dry it with high-purity argon gas to obtain a hydrophobic substrate.

[0045] 3) Au contact electrode 3 was prepared by thermal vacuum evaporation. A mask plate with square holes of 1 square millimeter was fixed on the Cs3Cu2I5 absorber layer 2, and a square Au contact electrode 3 with a thickness of 40 nanometers was prepared on the Cs3Cu2I5 absorber layer 2 by thermal vacuum evaporation.

[0046] 4) The In contact electrode 4 was prepared by indium granulation. The indium granules were cut into cubes with a side length of 1 mm and pressed onto the GaN transport layer 1 without the deposited Cs3Cu2I5 absorber layer 2 using tweezers.

[0047] Figure 2 The figure shows the response spectrum of the photodetector prepared in Example 1 at zero bias. As shown, the device exhibits selective narrowband detection capability for ultraviolet light in the 280–375 nm wavelength range at 0 V. This may be due to the following synergistic effects: a) The Cs3Cu2I5 quasi-single-crystal thin film has strong absorption capability for UVC light, and due to the recombination of surface defect states, UVC photons cannot contribute photocurrent. b) Photons in the 280–375 nm wavelength range can reach the vicinity of the heterojunction interface, generating photogenerated electron-hole pairs. These photogenerated electron-hole pairs separate under the influence of the built-in electric field and are collected by the two electrodes, generating photocurrent in the external circuit. c) For incident light with wavelengths exceeding 375 nm, since the photon energy is lower than the band gap energy of the two materials, the generated photogenerated carriers can be ignored.

[0048] (2) Connect the ultraviolet sensing module to the signal processing module. Connect the In contact electrode 4 to the ground pin of the signal processing module, connect the Au contact electrode 3 to the pin of the analog-to-digital converter of the signal processing module, and turn on the mobile hotspot to connect to the Wi-Fi sub-module.

[0049] (3) The display module displays ultraviolet irradiation information. The ultraviolet power density of solar radiation was measured using a commercial ultraviolet power meter. P UV ), and open the display module App to observe and record different P UV The photovoltage of the device. For example... Figure 3 As shown, photovoltage and P UV It exhibits a good linear relationship. This allows the prepared ultraviolet radiation monitor to accurately obtain the corresponding ultraviolet light power based on the measured photovoltage. P UV (Unit: milliwatts per square centimeter). Additionally, the UV index can be calculated using the formula... P UV = 1.51 + UVI × 3.55 obtained.

[0050] To evaluate the performance of the ultraviolet radiation monitor, ultraviolet radiation information under sunlight was measured on March 26, 2025 (sunny day) in Henan, China (34.74°N, 113.64°E). Figure 4 As shown, under sunlight, the UVI is 3, and the ultraviolet power density is 9.22 milliwatts per square centimeter. Furthermore, the app recommends that people seek shade, wear hats, sunglasses, apply sunscreen, and wear sun-protective clothing in such conditions.

[0051] To verify the UV radiation monitor's ability to monitor UV radiation information around the clock, the UVI variation trend on January 6, 2025 (sunny day) was tested and recorded. For example... Figure 5 As shown, the UVI exceeded 3 between 10:53 AM and 1:08 PM, requiring sun protection measures, confirming the UV radiation monitor's ability to monitor UVI around the clock.

[0052] It is well known that prolonged exposure to ultraviolet (UV) radiation can cause sunburn. The severity of sunburn depends on the UV radiation dose (UVA). D UV ),in, D UV With exposure time ( t e The relationship between them can be expressed by formulas. D = PUV ' × t e Indicates. For example... Figure 6 As shown, based on the initial ultraviolet radiation dose that causes grade I to IV sunburn and grade II sunburn, the threshold exposure time for grade I and grade II sunburn on January 6, 2025 (sunny day) was calculated. By calculating the exposure time, people can more accurately assess the potential risk of sun exposure for different skin types, thus allowing them to rationally plan outdoor activities and take appropriate sun protection measures. Example 2

[0053] The difference between this embodiment and Embodiment 1 is that, in preparing the absorber layer 2 in the ultraviolet sensing module, the Cs3Cu2I5 is a Cs3Cu2I5 polycrystalline thin film prepared by conventional spin coating. Specifically, after obtaining the Cs3Cu2I5 precursor film by spin coating, it is placed on a heating stage at 150 degrees Celsius for conventional annealing for 1 hour without applying additional pressure.

[0054] Figure 2 The figures show the response spectra of the narrowband photodetectors in Examples 1 and 2 under zero bias. As can be seen from the figures, the hot-press annealing treatment in Example 1 significantly improved the responsivity of the device while ensuring narrowband ultraviolet light detection capability in the 280–375 nm wavelength range. This is likely due to the following synergistic effects: a) Hot-press annealing effectively reduces the defect state density to improve device performance, while ensuring that UVC photons cannot generate photocurrent, thus maintaining narrowband detection capability. b) The quasi-single-crystal thin film suppresses light scattering in the 280–375 nm wavelength range, enhancing the photon penetration ability to the heterojunction and increasing the number of photogenerated carriers. c) The quasi-single-crystal thin film establishes a stronger intrinsic electric field, promoting efficient separation and transport of photogenerated carriers in the 280–375 nm wavelength range. d) The quasi-single-crystal thin film has a superior vertical charge transport mechanism and reduced defect state density, significantly improving the transport and collection efficiency of photogenerated holes to the gold electrode. The narrowband photodetector in Example 1 exhibits a significant selective response to UVA-UVB band light without the need for filters, achieving not only portability and cost advantages but also excellent resistance to visible and UVC light interference. Notably, its excellent sensitivity allows for easy integration into commercial data acquisition devices as an ultraviolet sensing module.

[0055] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A real-time ultraviolet irradiance monitor based on narrowband photodetectors, characterized by: The ultraviolet sensor module comprises a self-powered ultraviolet narrow-band photodetector, the self-powered ultraviolet narrow-band photodetector comprises, from bottom to top, a transport layer, an absorption layer and a first contact electrode, and the transport layer is further provided with a second contact electrode; The transport layer is a wide-bandgap semiconductor with an absorption cutoff edge of 350-400 nm, the absorption layer is a full-inorganic copper halide polycrystalline thin film, a full-inorganic copper halide quasi-single crystal thin film or a full-inorganic copper halide microwire with an absorption cutoff edge of 280-320 nm; The preparation method of the full-inorganic copper halide quasi-single crystal thin film is as follows: the full-inorganic copper halide polycrystalline thin film is subjected to heat pressing and annealing treatment to obtain the full-inorganic copper halide quasi-single crystal thin film. The specific preparation method of the full-inorganic copper halide quasi-single crystal thin film is as follows: the upper side of the transport layer is subjected to hydrophilic treatment to obtain a hydrophilic surface, and the full-inorganic copper halide polycrystalline thin film is prepared on the hydrophilic surface; 2. The real-time UV irradiation monitor of claim 1, wherein: The hydrophobic substrate is pressed on the full-inorganic copper halide polycrystalline thin film, and then subjected to heat pressing and annealing treatment, after the heat pressing and annealing treatment, the temperature is lowered to room temperature, the residual pressure is released, the hydrophobic substrate is removed, and the full-inorganic copper halide quasi-single crystal thin film, i.e., the absorption layer, is obtained. The heat pressing and annealing treatment is performed at a pressure of 120-180 MPa and a temperature of 30-200℃ for 0.5-2 hours.

3. The real-time UV irradiation monitor according to claim 1 or 2, characterized in that: After the heat pressing and annealing treatment, the temperature is first lowered to room temperature at a rate of 0.5-5℃ / h, and then the residual pressure is released.

4. The real-time UV irradiation monitor of claim 2, wherein: The absorption layer is a Cs3Cu2I5 polycrystalline thin film or a Cs3Cu2I5 quasi-single crystal thin film; or the absorption layer is one of a CsCu2I3 microwire, a Rb2CuCl3 microwire and a Rb2CuBr3 microwire.

5. The real-time UV irradiation monitor according to claim 1 or 2, characterized in that: The thickness of the absorption layer is 300 nm-3 microns.

6. The real-time UV irradiation monitor of claim 1, wherein: The first contact electrode is in ohmic contact with the absorption layer, and has a thickness of 30-100 nm.

7. The real-time UV irradiation monitor of claim 1, wherein: The second contact electrode is in ohmic contact with the transport layer, and has a thickness of 30-100 nm.

8. The real-time UV irradiation monitor of claim 1, wherein: The transport layer is GaN, ZnO, NiO or TiO2, and has a thickness of 300 nm-2000 nm.

9. The real-time UV irradiation monitor of claim 1, wherein: The ultraviolet sensor module is connected to the signal processing module, and the signal processing module is connected to the display module through wireless transmission.

10. The real-time ultraviolet irradiation monitor of claim 1, wherein: ​

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