Perovskite thin film and preparation method and application thereof
By using fluorinated phosphazene compounds as ligands in perovskite thin films, the cation distribution and stress relief were controlled, thus solving the stability and crystallinity problems of perovskite thin films under environmental stress and achieving efficient carrier transport and improved device performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGXI UNIV OF SCI & TECH
- Filing Date
- 2025-11-18
- Publication Date
- 2026-07-24
AI Technical Summary
Existing perovskite films exhibit poor stability under environmental stresses such as humidity, heat, and light. Uneven cation distribution affects crystallinity and long-term stability, and existing improvement schemes cannot effectively eliminate residual stress and improve uniformity.
Fluorophosphazene compounds were used as ligands and mixed with perovskite precursor solutions. Through hydrogen bonding and coordination bonding, some formamidinium cations were anchored at the bottom of the film, eliminating residual stress and forming coordination bonds with Pb2+ to passivate defects and regulate crystallization kinetics.
This method achieves uniform cation distribution in perovskite films, eliminates residual stress, improves film stability and crystallinity, maintains the original band gap, and enhances carrier transport efficiency and device performance.
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Figure CN121510844B_ABST
Abstract
Citation Information
Patent Citations
CN119855352A
CN120225018A