Semiconductor bonding apparatus operation control method and chip alignment virtual simulation control method

Abstract

The application provides a semiconductor bonding equipment operation control method and a chip alignment virtual simulation control method, which determine a bonding parameter range and output optimal bonding process parameters by combining user permissions, to-be-processed bonding chip parameters and a current running state of the bonding equipment, limit and adjust input bonding process parameters, combine a process automation model to click corresponding operation interface components or input to corresponding frames according to bonding parameters fed back by the user, reduce learning time and operation time of the user on the operation interface of the bonding equipment, and improve efficiency and accuracy of using the bonding equipment; in the chip alignment step, the step length corresponding to each operation step is simulated and adjusted according to the alignment precision, the range of the movable chip in each precision alignment stage is changed, the adjustment of the user in the higher precision alignment stage does not affect the low precision alignment result, and the adjustment of the double focal length and the relative angle is simulated, so that the efficiency of the chip alignment step in the actual operation is improved.

Description

Technical Field

[0001] This invention relates to the field of micro-nano fabrication, specifically to a semiconductor bonding equipment operation control method and a chip alignment virtual simulation control method. Background Technology

[0002] Bonding equipment is a core component in microelectronic packaging, optoelectronic device assembly, and MEMS manufacturing. The bonding process requires inputting various bonding parameters. Bonding quality is determined by multiple parameters, including temperature, pressure, time, and the bonding environment. These parameters are interconnected, necessitating operators with ample experience in micro / nano fabrication or bonding equipment operation; otherwise, achieving satisfactory bonding results is difficult. For example, different bonding processes have vastly different requirements for temperature and pressure. Taking ultrasonic bonding as an example, ultrasonic power, amplitude, and pressure must be precisely matched with bonding time—excessive power can lead to wire deformation and chip damage; insufficient pressure can result in insufficient bond strength and poor solder joints. Operators must determine the parameter window through extensive experimentation based on the bonding material (e.g., gold, aluminum, copper wire) and device type, and batch-to-batch material property fluctuations necessitate parameter readjustment.

[0003] Meanwhile, the bonding process also presents challenges in aligning the chip with the substrate or between chips. Existing bonding equipment relies on high-magnification microscopic vision systems for alignment, requiring camera calibration, light source parameter adjustment, and image algorithm parameter optimization during operation. The significant differences in reflective properties of different materials can easily lead to blurred image edges and misidentification of feature points, necessitating repeated adjustments by operators based on the bonding object. Summary of the Invention

[0004] Based on this, the present invention provides a semiconductor bonding equipment operation control method and a chip alignment virtual simulation control method. The method determines the specific bonding process parameter range and optimal bonding process parameters by using user permissions, the parameter information of the bonding chip to be processed, and the reference historical operation records of the bonding equipment. Simultaneously, multi-dimensional complementary first and second marks are set on the bonding chip to be processed, and multiple alignment accuracies are set on the first and second marks to assist the bonding equipment in accurately aligning the chip. After chip alignment, the bonding process parameter range and optimal bonding process parameters are compared with the bonding process parameters input by the user, generating corresponding prompt information to improve the success rate of the user's semiconductor bonding equipment operation. At the same time, the automated module for calling the required bonding process parameters converts them into multiple bonding parameter input instructions, reducing the tedious operation of users inputting parameters one by one on the bonding equipment operation interface and improving the operating efficiency of the semiconductor bonding equipment.

[0005] In a first aspect, the present invention provides a semiconductor bonding equipment operation control method, which is applied to a bonding equipment operation control system. The bonding equipment operation control system includes a semiconductor bonding equipment, a user operator, and an equipment control terminal. The user operator is communicatively connected to the bonding equipment, and the equipment control terminal is communicatively connected to both the semiconductor bonding equipment and the user operator. The equipment control terminal includes a process automation module. When the semiconductor bonding equipment operation control method is executed by the equipment control terminal, it includes:

[0006] Step S1: Obtain user permissions, parameter information of the first and second chips to be processed, and bonding accuracy requirements;

[0007] Step S2: Retrieve reference historical operation records from the historical operation records of the bonding device based on the parameter information of the first chip and the second chip;

[0008] Step S3: Combine the user permissions, refer to historical operation records, and the current operating status of the bonding equipment to obtain the bonding process parameter range;

[0009] Step S4: Obtain the optimal bonding process parameters based on the reference historical operation records and the current operating status of the bonding equipment;

[0010] Step S5: Adjust the step size corresponding to each operation step in the user operator according to the alignment accuracy of the first mark in the first chip and the second mark in the second chip.

[0011] Step S6: Generate chip movement instructions based on the step size corresponding to the operation step and the control actions fed back by the user operator, and adjust the upper robotic arm and chuck of the bonding device according to the chip movement instructions to adjust the positions of the first chip and the second chip.

[0012] Step S7, repeat steps S5-S6 until the alignment accuracy of the first mark in the first chip and the second mark in the second chip meets the bonding accuracy requirement;

[0013] Step S8: Obtain the bonding process parameters input by the user;

[0014] Step S9: If the bonding process parameters are within the range of the bonding process parameters and the similarity between the bonding process parameters and the optimal bonding process parameters is lower than the parameter reference threshold, the bonding process parameters are input into the bonding simulation model to obtain the bonding success probability and sent to the user.

[0015] Step S10: If the bonding process parameters are within the range of the bonding process parameters and the similarity between the bonding process parameters and the optimal bonding process parameters is higher than the parameter reference threshold, generate several bonding parameter input instructions based on the bonding process parameters.

[0016] Step S11: Send the bonding parameter input instruction to the process automation module, so that the process automation module clicks the operation interface component of the bonding device or inputs the corresponding bonding parameters according to the bonding parameter input instruction.

[0017] Furthermore, the step of retrieving a reference historical operation record from the historical operation record of the bonding device based on the parameter information of the first chip and the second chip specifically involves:

[0018] Based on the parameter information of the first chip and the second chip, retrieve the reference historical operation record with the same parameter information from the historical operation record of the bonding device;

[0019] If there is no reference historical operation record with the same parameter information in the historical operation record of the bonding equipment, retrieve the reference historical operation record with the same chip material, chip thickness and bonding bump material from the historical operation record of the bonding equipment.

[0020] Furthermore, the process of obtaining the bonding process parameter range by combining the user permissions, referring to historical operation records, and the current operating status of the bonding equipment specifically includes:

[0021] The minimum and maximum bonding process parameter ranges of the bonding equipment are obtained based on the reference historical operation records.

[0022] Retrieve historical operation records of the bonding equipment within a preset period;

[0023] The historical operation records of the bonding equipment within the preset period and the current operating status of the bonding equipment are input into the equipment aging model to obtain the fluctuation rate of various bonding parameters of the bonding equipment.

[0024] The minimum and maximum bonding process parameter ranges are adjusted according to the fluctuation rate of each bonding parameter of the bonding equipment to obtain the minimum real-time bonding process parameter range and the maximum real-time bonding process parameter range.

[0025] If the user permission is a normal user permission, the minimum real-time bonding process parameter range is recorded as the bonding process parameter range;

[0026] If the user permission is advanced user permission, the maximum real-time bonding process parameter range is recorded as the bonding process parameter range.

[0027] Furthermore, the semiconductor bonding equipment operation control method further includes:

[0028] The standard process parameter threshold is retrieved based on the parameter information of the first and second chips to be processed.

[0029] The minimum and maximum bonding process parameter ranges of the bonding equipment are obtained by combining the standard process parameter thresholds and the reference historical operation records.

[0030] Furthermore, by combining the reference historical operation records and the current operating status of the bonding equipment, the optimal bonding process parameters are obtained, specifically:

[0031] Input the historical operation records of the bonding equipment within the preset period and the current operating status of the bonding equipment into the equipment aging model to obtain the fluctuation rate of various bonding parameters of the bonding equipment;

[0032] The reference historical operation record is input into the trained bonding process model to obtain the initial optimal bonding process parameters.

[0033] The initial optimal bonding process parameters are adjusted based on the fluctuation rate of each bonding parameter of the bonding equipment to obtain the optimal bonding process parameters.

[0034] Furthermore, the first mark and the second mark are complementary patterns with multiple precision alignments, and a complete mark pattern is obtained when the precisions of the first mark and the second mark are aligned.

[0035] Furthermore, if the bonding process parameters are within the range of the bonding process parameters and the similarity between the bonding process parameters and the optimal bonding process parameters is lower than the parameter reference threshold, the bonding process parameters are input into the bonding simulation model to obtain the bonding success probability, and then sent to the user. Specifically:

[0036] If the bonding process parameters are within the range of the bonding process parameters, compare the similarity between the bonding process parameters and the optimal bonding process parameters;

[0037] If the difference between any bonding process parameter and the corresponding optimal bonding process parameter is greater than the preset alarm ratio, the bonding process parameter is input into the bonding simulation model to obtain the bonding success probability.

[0038] If the bonding success probability is lower than the preset parameter simulation pass threshold, a parameter reminder message is generated based on the bonding success probability and the bonding process parameters and sent to the user.

[0039] If the bonding success probability is higher than the preset parameter simulation pass threshold, a parameter reminder message is generated based on the bonding process parameters and sent to the user.

[0040] Furthermore, the semiconductor bonding equipment operation control method further includes:

[0041] The number of bonding process parameters whose difference from the corresponding optimal bonding process parameter is greater than a preset alarm ratio is counted.

[0042] If the number of process parameters exceeds the preset number of parameter deviations, a bonding process parameter deviation reminder message is generated and sent to the user.

[0043] Furthermore, the semiconductor bonding equipment operation control method further includes:

[0044] The temperature change rate for each temperature change stage is obtained based on the bonding process parameters input by the user.

[0045] If the rate of temperature change in any temperature change phase exceeds the temperature change threshold of the bonding device, a temperature unreachable alert message will be generated and sent to the user.

[0046] Furthermore, the semiconductor bonding equipment operation control method further includes:

[0047] The pressure change rate for each pressure change stage is obtained based on the bonding process parameters input by the user.

[0048] If the rate of pressure change in any pressure change phase exceeds the pressure change threshold of the bonding equipment, a pressure unreachable warning message will be generated and sent to the user.

[0049] Furthermore, the semiconductor bonding equipment operation control method further includes:

[0050] After the first and second chips to be processed are bonded, the temperature of the bonding equipment chamber is obtained from the feedback of the process automation module.

[0051] If the temperature of the bonding equipment chamber is lower than the preset sampling temperature, a sampling reminder message will be sent to the user.

[0052] Secondly, the present invention also provides a semiconductor bonding chip alignment virtual simulation control method, wherein the semiconductor bonding chip alignment virtual simulation control method is applied to a bonding chip alignment simulation system, the bonding chip alignment simulation system includes a user operator and a device mobile terminal with a display, and the semiconductor bonding chip alignment virtual simulation control method includes:

[0053] According to the bonding simulation task, retrieve the first sample image and the second sample image after the bonding device has finished sample loading;

[0054] Based on the movement of the user's controller in the XY axis direction, the first sample image is traversed to locate the first marked area, and the second sample image is traversed to locate the second marked area.

[0055] Adjust the position of the first marking area based on the sample movement information fed back by the user's operator;

[0056] If the relative distance between the precision marker points of the first and second markers after adjustment increases, an alignment prompt message is generated by combining the distance between the precision marker points of the first and second markers.

[0057] If the relative distance between the alignment marks of the first and second marks decreases after adjustment, and the alignment accuracy of the first and second marks meets the accuracy requirements of the bonding simulation task, the semiconductor bonding chip alignment simulation is successful.

[0058] Furthermore, adjusting the position of the first marked area based on the sample movement information fed back by the user operator specifically involves:

[0059] Adjust the step size corresponding to each operation step in the user operator according to the alignment accuracy of the first and second marks;

[0060] The displacement information of the first marked area is obtained by combining the step size of the operation step and the sample movement information fed back by the user operator.

[0061] Furthermore, the semiconductor bonding chip alignment virtual simulation control method also includes:

[0062] If step size adjustment information is received from the user's operator, retrieve the user's historical operation records on the bonding equipment and the assessment results of the bonding equipment;

[0063] If the user's success rate in the historical operation record of the bonding device is greater than the first set threshold, and the user's assessment result in the bonding device is higher than the second set threshold, the step size corresponding to each operation step in the user operator is adjusted in combination with the step size adjustment information and the alignment accuracy of the first and second marks.

[0064] If the user's success rate in the historical operation record of the bonding device is lower than the first set threshold, or the user's assessment result in the bonding device is lower than the second set threshold, and the step size adjustment information is to increase the step size corresponding to each operation step, a prompt message indicating that the step size adjustment has failed will be generated.

[0065] Thirdly, the present invention also provides a computer-readable storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, implements the steps of the semiconductor bonding device operation control method according to any one of the first aspects or the semiconductor bonding chip alignment virtual simulation control method according to any one of the second aspects.

[0066] Fourthly, the present invention also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, it executes the semiconductor bonding device operation control method according to any one of the first aspects or the semiconductor bonding chip alignment virtual simulation control method according to any one of the second aspects.

[0067] The beneficial effects of adopting the above technical solution are as follows: The semiconductor bonding equipment operation control method provided in this embodiment determines the specific bonding process parameter range and the optimal bonding process parameters through user permissions, the parameter information of the bonding chip to be processed, and the reference historical operation records of the bonding equipment. At the same time, multi-dimensional complementary first and second marks are set on the bonding chip to be processed, and multiple alignment accuracies are set on the first and second marks to assist the bonding equipment in accurately aligning the chip. After the chip is aligned, the bonding process parameter range and the optimal bonding process parameters are compared with the bonding process parameters input by the user to generate corresponding prompt information, thereby improving the success rate of the user's semiconductor bonding equipment operation. Meanwhile, the automated module for calling the required bonding process parameters is converted into multiple bonding parameter input instructions, reducing the user's learning time and operation time on the bonding equipment operation interface, and improving the efficiency and accuracy of the user's use of the bonding equipment. Attached Figure Description

[0068] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below.

[0069] Figure 1 This is a schematic diagram of a semiconductor bonding device operation control method in one embodiment of this application;

[0070] Figure 2 This is a schematic diagram of a semiconductor bonding device chip alignment virtual simulation control method in one embodiment of this application. Detailed Implementation

[0071] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. To describe the present invention in more detail, the semiconductor bonding equipment operation control method and chip alignment virtual simulation control method provided by the present invention will be specifically described below with reference to the accompanying drawings.

[0072] Unless otherwise defined, the technical or scientific terms used in this application shall have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this invention do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms "an," "a," or "the" do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms "comprising" or "including" mean that the preceding element or object encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. The terms "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up," "down," "left," "right," etc., are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0073] As semiconductor devices evolve towards smaller sizes, higher integration, and higher power densities, wafer bonding, as a core component of advanced packaging, faces exponentially increasing technical challenges and precision requirements. Bonding primarily involves combining two wafers together using physical or chemical methods to assist semiconductor manufacturing processes or to form heterogeneous composite wafers with specific functions. Bonding technologies are categorized in various ways. Generally, based on the type of wafer being bonded, they can be classified as wafer-to-wafer (W2W) and die-to-wafer (D2W). Based on whether debonding is required after bonding, they can be divided into temporary bonding and permanent bonding. Based on whether an auxiliary interface layer is introduced between the wafers to be bonded, they can also be classified as direct bonding, indirect bonding, and hybrid bonding. Depending on whether they are traditional or advanced, traditional methods include wire bonding, while advanced methods employ flip-chip bonding and hybrid bonding.

[0074] A typical bonding operation usually includes the steps of "sample loading - image positioning - sample placement - marker location - marker alignment - input bonding parameters - sample bonding - sample removal". In the marker alignment step, the user needs to continuously adjust the position of the chip fixed by the robotic arm or chuck based on the marker alignment observed under upper and lower microscopes to achieve perfect marker alignment. This process requires the user to constantly adjust the position of the robotic arm based on experience and feedback images of the markers, making it relatively tedious. Furthermore, if the user fails to align the markers in this step, there is a high risk of warping or breakage during subsequent bonding due to misalignment. Similarly, in the step of inputting bonding parameters, the bonding temperature, pressure, vacuum, and other parameters are interdependent. Determining these parameters relies heavily on the user's experience, which is extremely unfriendly to users unfamiliar with bonding equipment or new to bonding processes. Improper setting of these parameters (such as excessively high temperature or pressure) can lead to chip deformation or even breakage.

[0075] Based on this, embodiments of the present invention propose a semiconductor bonding equipment operation control method. The semiconductor bonding equipment operation control method is applied to a bonding equipment operation control system, which includes a semiconductor bonding equipment, a user operator, and an equipment control terminal. The user operator is communicatively connected to the bonding equipment, and the equipment control terminal is communicatively connected to both the semiconductor bonding equipment and the user operator. The equipment control terminal includes a process automation module.

[0076] The semiconductor bonding equipment includes an upper robotic arm, a chuck, and movable upper and lower microscopes. The upper robotic arm is equipped with suction cup grippers to hold the upper chip, and its position can be adjusted by moving the upper robotic arm in the Z-axis direction. The chuck is equipped with a structure to fix the lower chip, and its position can be adjusted by moving the chuck in the X, Y, and Z axes. The angle adjustment adjusts the position of the lower chip to align the upper and lower chips; the movable upper and lower microscopes can move between the upper and lower chips during alignment, allowing observation of markings on the chips through focus or magnification adjustment; the upper robotic arm can communicate with the process automation module of the equipment control terminal. The user operator can be an XYZ directional joystick or an XBOX controller. The aforementioned equipment control terminal includes, but is not limited to, smartphones and computer devices, wherein the computer device can be at least one of desktop computers, portable computers, laptop computers, mainframe computers, tablet computers, etc. The equipment control terminal generates corresponding control commands based on information from the semiconductor bonding equipment and specific operations from the user operator. (See attached...) Figure 1The schematic diagram of the semiconductor bonding equipment operation control method shown illustrates the specific execution steps of an embodiment of the semiconductor bonding equipment operation control method, with the equipment control terminal as the executing entity.

[0077] Step S1: Obtain user permissions, parameter information of the first and second chips to be processed, and bonding accuracy requirements.

[0078] Specifically, considering that different users have different levels of familiarity with the operation of the bonding device, this embodiment sets different user permissions in the bonding device, namely ordinary user permissions and advanced user permissions, corresponding to different ranges of bonding device parameter operations.

[0079] Since the bonding equipment needs to fuse the bonding bumps of two chips to be processed through heating and pressing, and since different chip sizes and materials have different tolerances to temperature and pressure, in order to avoid the material melting or chip breakage during the bonding process, this embodiment needs to obtain the parameters of the first and second chips to be processed input by the user before the user performs the specific bonding operation. The parameter information of the first chip includes the chip size, material, thickness, bump size, and material of the bonding bumps in the first chip. The parameter information of the second chip includes the chip size, material, thickness, bump size, and material of the bonding bumps in the second chip.

[0080] Furthermore, the reliability of the chip bonding result also depends on whether the upper and lower chips are aligned before the heating and pressing operations. Different bonding operations have different alignment requirements for the upper and lower chips. Therefore, it is necessary to obtain the bonding accuracy requirements input by the user before the operation, such as a bonding accuracy of 0.001μm.

[0081] Step S2: Retrieve reference historical operation records from the historical operation records of the bonding device based on the parameter information of the first chip and the second chip.

[0082] Specifically, since different models of bonding equipment may have different heating or pressing effects on the chips, in order to improve the accuracy of the user's bonding equipment operation, reference historical operation records can be retrieved from the historical operation of the bonding equipment based on the parameter information of the first and second chips to be processed.

[0083] Step S201: Based on the parameter information of the first chip and the second chip, retrieve the reference historical operation record with the same parameter information from the historical operation record of the bonding device.

[0084] Step S202: If there is no reference historical operation record with the same parameter information in the historical operation record of the bonding equipment, retrieve the reference historical operation record with the same chip material, chip thickness and bonding bump material from the historical operation record of the bonding equipment.

[0085] To reduce the risk of data explosion in historical operation records, this embodiment only retrieves historical operation records that are identical or partially identical to the parameter information of the first and second chips. Priority is given to retrieving historical operation records with completely identical chip parameter information (including chip and bonding bump dimensions, materials, and thickness), which have extremely high reliability. When the parameter information is not completely identical, historical operation records with partially identical chip parameter information (chip material, chip thickness, and bonding bump material) are retrieved, which have high reference value for setting heating temperature and pressure parameters.

[0086] It should be noted that the referenced historical operation records in step S2 of this embodiment include not only historical operation records of successful bonding, but also historical operation records of failed bonding.

[0087] Step S3: Combine the user permissions, refer to historical operation records, and the current operating status of the bonding equipment to obtain the bonding process parameter range.

[0088] Specifically, to avoid situations where improper input of bonding process parameters by users causes abnormal operation of the bonding equipment or damage to user samples, this embodiment combines user permissions, reference historical operation records, and the current operating status of the bonding equipment to obtain different ranges of bonding process parameters.

[0089] Step S301: Obtain the minimum and maximum bonding process parameter ranges of the bonding equipment based on the reference historical operation records.

[0090] The reference historical operation records include both successful and failed bond operation records. For each bond process parameter, a minimum and maximum parameter range are set. The minimum parameter range for each bond process parameter is determined by the minimum and maximum values ​​of the successful bond operation records (the union of all successful bond operation records). After determining the minimum parameter range for each bond process parameter, the intersection of the minimum parameter ranges of all identical bond process parameters (such as temperature and pressure) is taken to obtain the minimum bond process parameter range for the bonded equipment. The maximum parameter range for each bond process parameter is determined by the minimum and maximum values ​​of the failed bond operation records (the negative set of all failed bond operation records). After determining the maximum parameter range for each bond process parameter, the union of the maximum parameter ranges of all identical bond process parameters (such as temperature and pressure) is taken to obtain the maximum bond process parameter range for the bonded equipment.

[0091] Step S302: Retrieve the historical operation records of the bonding equipment within the preset period.

[0092] Step S303: Input the historical operation records of the bonding equipment within the preset period and the current operating status of the bonding equipment into the equipment aging model to obtain the fluctuation rate of various bonding parameters of the bonding equipment.

[0093] For standard bonding equipment, the range of each parameter is fixed. However, as the bonding equipment undergoes component replacement, aging, and calibration operations during use, the parameter range may fluctuate. For example, as the internal heating components of the bonding equipment age, setting the bonding heating parameters to 200℃ within the original range (e.g., 80℃-200℃) may not achieve a 60% heating efficiency. In this case, the parameter range can be appropriately widened (e.g., 80℃-250℃), allowing the selection of heating parameters beyond the original range, such as 22℃. At 0℃, the heating efficiency reaches the factory setting of 180℃, taking into account the aging of the heating components. However, due to the decay of heating efficiency, this heating parameter exceeds the original parameter limit range without causing damage to other components of the bonding equipment. Therefore, this embodiment also sets fluctuation rates for various bonding parameters of the bonding equipment based on the current operating status of the bonding equipment, thereby updating the parameter limit ranges of each bonding parameter: the historical bonding records within a preset period (such as the most recent week, the most recent month, etc.) and the current operating status of the bonding equipment are input into the equipment aging model to obtain the fluctuation rates of various bonding parameters of the bonding equipment. The equipment aging model can be trained using CNN models, RNN models, LSTM models, etc., combined with the historical bonding records and historical operating status of the bonding equipment.

[0094] Step S304: Adjust the minimum and maximum bonding process parameter ranges according to the fluctuation rate of each bonding parameter of the bonding equipment to obtain the minimum real-time bonding process parameter range and the maximum real-time bonding process parameter range.

[0095] In this embodiment, the fluctuation rate of each bonding parameter represents the aging degree of the corresponding equipment component. The fluctuation rate is superimposed on the minimum and maximum bonding process parameter ranges to obtain a bonding process parameter limit range that is more in line with the current operating state of the bonding equipment, thus avoiding damage to the equipment due to inaccurate bonding process parameters caused by equipment aging.

[0096] Step S305: If the user permission is a normal user permission, the minimum real-time bonding process parameter range is recorded as the bonding process parameter range.

[0097] Step S306: If the user permission is advanced user permission, the maximum real-time bonding process parameter range is recorded as the bonding process parameter range.

[0098] Specifically, to prevent improper user-inputted bonding process parameters from damaging the bonding equipment or the bonded chip, and considering the varying levels of proficiency different users have in setting bonding equipment process parameters, this embodiment matches different bonding process parameter ranges to different user permissions. When the user has ordinary user permissions, the minimum real-time bonding process parameter range is used as the reference range to ensure the success rate of the user's bonding operation; when the user has advanced user permissions, the maximum real-time bonding process parameter range is used as the reference range to ensure that the user's bonding operation does not damage the bonding equipment.

[0099] In addition, considering that reference values ​​are recorded in the semiconductor bonding equipment or the bonding chips to be processed in the equipment itself or in public documents and textbooks, in order to improve the reliability of the bonding process parameter range, this embodiment also introduces standard process parameter thresholds in step S301:

[0100] The standard process parameter threshold is retrieved based on the parameter information of the first and second chips to be processed.

[0101] The minimum and maximum bonding process parameter ranges of the bonding equipment are obtained by combining the standard process parameter thresholds and the reference historical operation records.

[0102] The standard process parameter threshold can be retrieved by the process automation module from the guidance parameter threshold range of the bonding equipment or from a regularly updated bonding literature database using the parameter information of the first chip and the second chip as an index. The parameter information of the first chip and the second chip includes at least one of the intrinsic features of the first chip and the second chip, such as material, size, bonding bump material, bonding bump size, chip contact surface material, and chip contact surface structure.

[0103] This embodiment can obtain the minimum and maximum bonding process parameter ranges by merging standard process parameter thresholds and referencing historical operation records to calculate the average value, or by using the standard process parameter thresholds as the minimum bonding process parameter range and the union of the reference historical operation records as the maximum bonding process parameter range, thereby obtaining a bonding process parameter range with higher reliability.

[0104] Step S4: Obtain the optimal bonding process parameters based on the reference historical operation records and the current operating status of the bonding equipment.

[0105] Specifically, to improve the success rate of bonding tasks, this embodiment can use historical successful operation data to construct a bonding process model and combine it with the current operating status of the bonding equipment to obtain optimal bonding process parameters. This setting can greatly reduce the requirement for user experience in inputting bonding parameters, lower the threshold for successful bonding task operation, and improve the task success rate of the bonding equipment.

[0106] After determining the range of bonding process parameters and the optimal bonding process parameters for a specific user or bonding task, it is necessary to align the first chip and the second chip to be processed, including the following steps S5-S7.

[0107] Step S5: Adjust the step size corresponding to each operation step in the user operator according to the alignment accuracy of the first mark in the first chip and the second mark in the second chip.

[0108] The minimum step size of the user operator is the minimum step size for effective user operation, typically set to one operation unit. This means that each time the user operates the user operator, they must move at least one operation unit in one direction to effectively trigger the user operator to send a specific operation command. By adjusting the step size of each operation step of the user operator in conjunction with the alignment accuracy, excessive movement of the first chip held by the robotic arm or the second chip fixed by the chuck during the chip alignment operation is avoided, reducing the need for repeated alignment of marks with different precisions.

[0109] For example, if the first and second markers are aligned to a precision of 1 μm, and the next alignment precision is 0.1 μm, then considering the minimum operating step size of the user manipulator is one operation grid, the step size of each operation step of the user manipulator can be set to 0.01 μm. With this setting, for each operation grid movement of the user manipulator, the first chip of the upper robotic arm moves only 0.01 μm. This step size movement will not cause misalignment of the previously aligned precision (1 μm) even if the user accidentally touches the user manipulator, thus facilitating faster chip alignment. Similarly, for situations where the flexibility of the user manipulator is reduced (i.e., the minimum operating step size of the user manipulator increases, such as two operation grids), the step size of each operation step of the user manipulator is set to 0.005 μm.

[0110] Step S6: Generate chip movement instructions based on the step size corresponding to the operation step and the control actions fed back by the user operator, and adjust the upper robotic arm and chuck of the bonding device according to the chip movement instructions to adjust the positions of the first chip and the second chip.

[0111] Specifically, after determining the step size corresponding to the operation step, a chip movement command is generated based on the control action fed back by the user operator. The control action fed back by the user operator includes the direction and magnitude of movement. For example, if the step size corresponding to the current operation step is 0.01 μm, and the control action fed back by the user operator is to move 3 operation units to the left in the X direction, the generated chip movement command is for the second chip, fixed by the chuck, to move 0.03 μm to the left in the X direction. This chip movement command is then sent to the chuck adjustment structure of the bonding device, causing the chuck to move 0.03 μm to the left in the X direction, thereby adjusting the position of the second chip.

[0112] Step S7: Repeat steps S5-S6 until the alignment accuracy of the first mark in the first chip and the second mark in the second chip meets the bonding accuracy requirement.

[0113] Specifically, by continuously updating the step size corresponding to each operation step in the user operator by combining the alignment accuracy in the first and second marks, the user can effectively limit the movement distance of the first chip during the chip alignment process at the current accuracy, thereby improving the efficiency of chip alignment.

[0114] It should be noted that the first and second marks contain stripes of multiple precisions (such as stripes with precision from 0.1cm to 100nm), but this does not mean that all precision stripes need to be aligned during the chip alignment process. In this case, the alignment can be stopped when the alignment precision of the first and second marks reaches 1μm, taking into account the precision requirements of the bonding task (such as a deviation of no more than 1μm).

[0115] Furthermore, this embodiment also considers the increasing precision requirements of bonding tasks. If the precision requirement of the bonding task exceeds the minimum movement distance of the robotic arm on the current bonding device, the bonding operation needs to be stopped, and a bonding device with higher precision needs to be sought. If the displacement of the chip movement command is less than the minimum movement distance of the upper robotic arm, a precision mismatch warning message is issued. For example, if the displacement of the chip movement command is 0.1 nm, while the minimum movement distance of the upper robotic arm is 1 nm, it means that the bonding device cannot implement the chip movement command, and a bonding device with higher precision needs to be sought.

[0116] Furthermore, after the first and second chips to be processed are aligned, the specific bonding process parameters input by the user can be obtained, and the bonding operation can be performed, specifically including:

[0117] Step S8: Obtain the bonding process parameters input by the user.

[0118] Step S9: If the bonding process parameters are within the range of the bonding process parameters and the similarity between the bonding process parameters and the optimal bonding process parameters is lower than the parameter reference threshold, the bonding process parameters are input into the bonding simulation model to obtain the bonding success probability and sent to the user.

[0119] In this embodiment, there are two reference values ​​for the bonding process parameters input by the user. If the bonding process parameters are within the range of the optimal bonding process parameters, it means that the bonding process parameters are in line with the current operating state of the equipment and will not cause damage to the equipment. The similarity between the bonding process parameters and the optimal bonding process parameters is compared to improve the reliability of the bonding process parameters or to ensure that the bonding process parameters can achieve a better bonding effect in actual operation.

[0120] Step S901: If the bonding process parameters are within the range of the bonding process parameters, compare the similarity between the bonding process parameters and the optimal bonding process parameters.

[0121] Step S902: If the difference between any bonding process parameter and the corresponding optimal bonding process parameter is greater than the preset alarm ratio, the bonding process parameter is input into the bonding simulation model to obtain the bonding success probability.

[0122] Step S903: If the bonding success probability is lower than the preset parameter simulation pass threshold, generate parameter reminder information based on the bonding success probability and the bonding process parameters and send it to the user.

[0123] Step S904: If the bonding success probability is higher than the preset parameter simulation pass threshold, generate parameter reminder information based on the bonding process parameters and send it to the user.

[0124] In this embodiment, the preset alarm ratio is determined by intrinsic characteristics such as the material of the bonding chip to be processed, chip size, bonding bump material, bonding bump size, chip contact surface material, and chip contact surface structure.

[0125] Furthermore, after comparing whether the deviation difference between each bonding process parameter and the corresponding optimal process parameter exceeds a preset alarm ratio, this embodiment also compares the number of parameters whose overall deviation difference from the optimal bonding process parameter exceeds a preset alarm ratio:

[0126] Step S905: Count the number of bonding process parameters whose difference from the corresponding optimal bonding process parameter is greater than a preset alarm ratio.

[0127] Step S906: If the number of process parameters exceeds the preset number of parameter deviations, generate a bonding process parameter deviation reminder message and send it to the user.

[0128] For example, if n of the user-inputted bonding process parameters have a difference greater than the corresponding optimal bonding process parameters than the preset alarm ratio, and the preset number of parameter deviations m is much smaller than n, then it indicates that the user-inputted bonding process parameters deviate from the optimal bonding process parameters overall, and a corresponding bonding process parameter deviation reminder message is generated.

[0129] Step S10: If the bonding process parameters are within the range of the bonding process parameters and the similarity between the bonding process parameters and the optimal bonding process parameters is higher than the parameter reference threshold, generate several bonding parameter input instructions based on the bonding process parameters.

[0130] Step S11: Send the bonding parameter input instruction to the process automation module, so that the process automation module clicks the operation interface component of the bonding device or inputs the corresponding bonding parameters according to the bonding parameter input instruction.

[0131] Specifically, when the bonding process parameters input by the user meet the above parameter limits, several bonding parameter input instructions can be generated and sent to the Robotic Process Automation (RPA) module. The RPA module then clicks on the operation interface components of the bonding equipment (such as adding a temperature change stage or a pressure change stage) and inputs the corresponding bonding parameters (including but not limited to temperature, pressure, and vacuum) according to the bonding parameter input instructions.

[0132] Furthermore, considering that the temperature and pressure changes of the bonding equipment are limited by the heating and pressurization efficiencies of the equipment components, and since the user-input bonding process parameters are not expressed as rates of change, it is difficult to directly observe whether the user-input bonding process parameters exceed the equipment's temperature or pressure change limits. Therefore, this embodiment also includes the following:

[0133] Step S1201: Obtain the temperature change rate for each temperature change stage based on the bonding process parameters input by the user.

[0134] Step S1202: If the temperature change rate in any temperature change stage exceeds the temperature change threshold of the bonding device, generate a temperature unreachable reminder message and send it to the user.

[0135] Step S1203: Obtain the pressure change rate for each pressure change stage based on the bonding process parameters input by the user.

[0136] Step S1204: If the pressure change rate in any pressure change stage exceeds the pressure change threshold of the bonding device, a pressure unreachable prompt message is generated and sent to the user.

[0137] In addition, considering that the chip and the chamber environment of the bonding equipment are still at a high temperature after the bonding operation is completed, if the user directly opens the chamber of the bonding equipment, it will not only easily damage the bonded chip, but also cause harm to the user. To avoid the above situation, this embodiment also includes the following steps:

[0138] Step S1301: After the first chip and the second chip to be processed are bonded, the temperature of the bonding equipment chamber fed back by the process automation module is obtained.

[0139] Step S1302: If the temperature of the bonding device chamber is lower than the preset sampling temperature, a sampling reminder message is sent to the user.

[0140] The preset sampling temperature can be set to room temperature or a temperature slightly higher than room temperature, such as 5°C higher than room temperature, to ensure that the bonded chip will not break or be damaged due to the interaction of hot and cold environments.

[0141] Furthermore, considering the limitations of the internal structure of the bonding equipment, this embodiment still adopts the "adjust the chip position of the upper robotic arm - observe whether the marks are aligned" mode to perform the chip alignment step. To improve the user's familiarity with the chip alignment module of the bonding equipment, as shown in the attached... Figure 2 As shown, this embodiment also proposes a semiconductor bonding chip alignment virtual simulation control method for this step. The semiconductor bonding chip alignment virtual simulation control method is applied to a bonding chip alignment simulation system, which includes a user operator and a mobile terminal with a display. The semiconductor bonding chip alignment virtual simulation control method includes:

[0142] Step S1401: According to the bonding simulation task, retrieve the first sample image and the second sample image after the bonding device has finished sampling.

[0143] Specifically, considering that different bonding types have different requirements for sample alignment, and that the accuracy of sample alignment has a large impact on bonded samples of different sizes, it is necessary to retrieve the first and second sample images from the knowledge base or historical bonding records according to the specific bonding simulation task (including sample size, alignment accuracy requirements, etc.) during the retrieval process.

[0144] Step S1402: Based on the movement of the user operator in the XY axis direction, traverse the first sample image to locate the first marked area, and traverse the second sample image to locate the second marked area.

[0145] Specifically, after the sample is loaded and before the mark alignment operation is performed, it is necessary to locate the first mark area and the second mark area. This image traversal process can be completed by simply translating the sample image. Therefore, at this time, only the operation of the user's operator in the XY axis direction is acquired.

[0146] Step S1403: Adjust the position of the first marking area according to the sample movement information fed back by the user operator.

[0147] Specifically, adjusting the position of the first marked area based on the sample movement information fed back by the user operator involves: adjusting the step size corresponding to each operation step in the user operator based on the alignment accuracy of the first and second marks; and obtaining the displacement information of the first marked area by combining the step size of the operation step and the sample movement information fed back by the user operator.

[0148] The process for determining the step size and displacement information for each operation step of the user operator can be found in the limitations of steps S5-S7 above, and will not be repeated here.

[0149] Step S1404: If the relative distance between the precision marker points of the first and second marks after adjustment increases, an alignment prompt message is generated by combining the distance between the precision marker points of the first and second marks.

[0150] Specifically, considering that users may be performing the simulation chip alignment process for the first time, and that the first and second markers are relatively small, the results may not be clearly observable for users during high-precision stripe alignment. In such cases, corresponding prompts can be provided based on the precision markers at each precision level. For example, if the relative distance between the precision markers of already aligned precision levels (such as the endpoints of two stripes) continuously increases, it indicates that the displacement feedback from the user's controller has not achieved higher-precision marker alignment but has instead damaged the already aligned markers. In this situation, alignment prompts can be generated based on the distance between the precision markers in the first and second markers to instruct the user to adjust the operation of the user controller.

[0151] Step S1405: If the relative distance between the alignment marks of the first and second marks decreases after adjustment, and the alignment accuracy of the first and second marks meets the accuracy requirements of the bonding simulation task, the semiconductor bonding chip alignment simulation is successful.

[0152] Furthermore, considering that users may adjust the step size of the user operator during the simulation phase in order to quickly complete the simulation, this embodiment also includes the following:

[0153] Step S1501: If step size adjustment information is received from the user operator, retrieve the user's historical operation records on the bonding equipment and the assessment results of the bonding equipment.

[0154] Step S1502: If the user's success rate in the historical operation record of the bonding device is greater than the first set threshold, and the user's assessment result in the bonding device is higher than the second set threshold, adjust the step size corresponding to each operation step in the user operator in combination with the step size adjustment information and the alignment accuracy of the first and second marks.

[0155] Step S1503: If the user's success rate in the historical operation record of the bonding device is lower than the first set threshold, or the user's assessment result in the bonding device is lower than the second set threshold, and the step size adjustment information is to increase the step size corresponding to each operation step, a prompt message indicating that the step size adjustment has failed is generated.

[0156] In this embodiment, the user operator step size adjustment is combined with the user's performance evaluation results or historical operation record success rate on the bonding device. When the user's historical operation record success rate is greater than a first preset threshold, and the performance evaluation result on the bonding device is higher than a second preset threshold, it indicates that the user is quite familiar with the operation of the bonding device. At this time, the requirements for user simulation can be appropriately relaxed. The step size corresponding to each operation step in the user operator can be appropriately relaxed by combining the step size adjustment information and the alignment accuracy of the first and second markers. For example, if the current step size of the user operator is 0.01μm, the step size adjustment information should be able to appropriately reflect the operation step size. At this time, the alignment accuracy of the first and second markers is 1μm. If the user's historical operation record success rate and the performance evaluation result on the bonding device meet the conditions, the step size of the user operator can be relaxed to 0.1μm to speed up the completion efficiency of the user simulation task.

[0157] It should be understood that, although attached Figure 1-2 The steps in the flowchart are shown sequentially as indicated by arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated otherwise, there is no strict order requirement for the execution of these steps, and they can be executed in other orders. Furthermore, [the flowchart is attached]. Figure 1-2 At least some of the steps in the process may include multiple sub-steps or sub-stages. These sub-steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least some of the sub-steps or stages of other steps.

[0158] In one embodiment, the present invention also provides a computer-readable storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, implements the steps of the above-described semiconductor bonding device operation control method or semiconductor bonding chip alignment virtual simulation control method.

[0159] The computer-readable storage medium may be an electronic storage device such as flash memory, EEPROM (Electrically Erasable Programmable Read-Only Memory), EPROM (Erasable Programmable Read-Only Memory), hard disk, or ROM. Optionally, the computer-readable storage medium includes a non-transitory computer-readable storage medium. The computer-readable storage medium has storage space for program code that performs any of the method steps described above. This program code can be read from or written to one or more computer program products, and the program code may be compressed in an appropriate form.

[0160] In one embodiment, the present invention provides a computer device including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the above-described semiconductor bonding device operation control method or semiconductor bonding chip alignment virtual simulation control method.

[0161] The computer device includes a memory, a processor, and one or more computer programs, wherein the one or more computer programs may be stored in the memory and configured to be executed by one or more processors, and the one or more application programs are configured to perform the above-described semiconductor bonding device operation control method or semiconductor bonding chip alignment virtual simulation control method.

[0162] A processor may include one or more processing cores. The processor connects to various parts of the computer device using various interfaces and lines, and performs various functions and processes data by running or executing instructions, programs, code sets, or instruction sets stored in memory, and by calling data stored in memory. Optionally, the processor may be implemented using at least one hardware form of Digital Signal Processing (DSP), Field-Programmable Gate Array (FPGA), or Programmable Logic Array (PLA). The processor may integrate one or a combination of several of the following: Central Processing Unit (CPU), Graphics Processing Unit (GPU), and modem. The CPU primarily handles the operating system, user interface, and applications; the GPU is responsible for rendering and drawing the displayed content; and the modem handles wireless communication. It is understood that the modem may also be implemented separately as a communication chip, without being integrated into the processor.

[0163] The memory may include random access memory (RAM) or read-only memory (ROM). The memory can be used to store instructions, programs, code, code sets, or instruction sets. The memory may include a program storage area and a data storage area. The program storage area may store instructions for implementing an operating system, instructions for implementing at least one function (such as touch functionality, sound playback functionality, image playback functionality, etc.), and instructions for implementing the various method embodiments described above. The data storage area may also store data created by the terminal device during use.

[0164] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for controlling the operation of a semiconductor bonding device, characterized in that, The semiconductor bonding equipment operation control method is applied to a bonding equipment operation control system. The bonding equipment operation control system includes a semiconductor bonding equipment, a user operator, and an equipment control terminal. The user operator is communicatively connected to the semiconductor bonding equipment. The equipment control terminal is communicatively connected to both the semiconductor bonding equipment and the user operator. The equipment control terminal includes a process automation module. When the semiconductor bonding equipment operation control method is executed by the equipment control terminal, it includes: Step S1: Obtain user permissions, parameter information of the first and second chips to be processed, and bonding accuracy requirements; Step S2: Retrieve reference historical operation records from the historical operation records of the bonding device based on the parameter information of the first chip and the second chip; Step S3, combining the user permissions, referring to historical operation records, and the current operating status of the bonding equipment, to obtain the bonding process parameter range, specifically: The minimum and maximum bonding process parameter ranges of the bonding equipment are obtained based on the reference historical operation records. Retrieve historical operation records of the bonding equipment within a preset period; The historical operation records of the bonding equipment within the preset period and the current operating status of the bonding equipment are input into the equipment aging model to obtain the fluctuation rate of various bonding parameters of the bonding equipment. The minimum and maximum bonding process parameter ranges are adjusted according to the fluctuation rate of each bonding parameter of the bonding equipment to obtain the minimum real-time bonding process parameter range and the maximum real-time bonding process parameter range. If the user permission is a normal user permission, the minimum real-time bonding process parameter range is recorded as the bonding process parameter range; If the user permission is an advanced user permission, the maximum real-time bonding process parameter range is recorded as the bonding process parameter range; Step S4: Obtain the optimal bonding process parameters based on the reference historical operation records and the current operating status of the bonding equipment; Step S5: Adjust the step size corresponding to each operation step in the user operator according to the alignment accuracy of the first mark in the first chip and the second mark in the second chip. Step S6: Generate chip movement instructions based on the step size corresponding to the operation step and the control actions fed back by the user operator, and adjust the upper robotic arm and chuck of the bonding device according to the chip movement instructions to adjust the positions of the first chip and the second chip. Step S7, repeat steps S5-S6 until the alignment accuracy of the first mark in the first chip and the second mark in the second chip meets the bonding accuracy requirement; Step S8: Obtain the bonding process parameters input by the user; Step S9: If the bonding process parameters are within the range of the bonding process parameters and the similarity between the bonding process parameters and the optimal bonding process parameters is lower than the parameter reference threshold, the bonding process parameters are input into the bonding simulation model to obtain the bonding success probability and sent to the user. Step S10: If the bonding process parameters are within the range of the bonding process parameters and the similarity between the bonding process parameters and the optimal bonding process parameters is higher than the parameter reference threshold, generate several bonding parameter input instructions based on the bonding process parameters. Step S11: Send the bonding parameter input instruction to the process automation module, so that the process automation module clicks the operation interface component of the bonding device or inputs the corresponding bonding parameters according to the bonding parameter input instruction.

2. The semiconductor bonding equipment operation control method as described in claim 1, characterized in that, The step of retrieving a reference historical operation record from the historical operation record of the bonding device based on the parameter information of the first chip and the second chip specifically involves: Based on the parameter information of the first chip and the second chip, retrieve the reference historical operation record with the same parameter information from the historical operation record of the bonding device; If there is no reference historical operation record with the same parameter information in the historical operation record of the bonding equipment, retrieve the reference historical operation record with the same chip material, chip thickness and bonding bump material from the historical operation record of the bonding equipment.

3. The semiconductor bonding equipment operation control method as described in claim 1, characterized in that, Also includes: The standard process parameter threshold is retrieved based on the parameter information of the first and second chips to be processed. The minimum and maximum bonding process parameter ranges of the bonding equipment are obtained by combining the standard process parameter thresholds and the reference historical operation records.

4. The semiconductor bonding equipment operation control method as described in claim 1, characterized in that, The optimal bonding process parameters are obtained by combining the reference historical operation records and the current operating status of the bonding equipment, specifically: Input the historical operation records of the bonding equipment within the preset period and the current operating status of the bonding equipment into the equipment aging model to obtain the fluctuation rate of various bonding parameters of the bonding equipment; The reference historical operation record is input into the trained bonding process model to obtain the initial optimal bonding process parameters. The initial optimal bonding process parameters are adjusted based on the fluctuation rate of each bonding parameter of the bonding equipment to obtain the optimal bonding process parameters.

5. The semiconductor bonding equipment operation control method as described in claim 1, characterized in that, The first mark and the second mark are complementary patterns with multiple precision alignments. When the precisions of the first mark and the second mark are aligned, a complete mark pattern is obtained.

6. The semiconductor bonding equipment operation control method as described in claim 1, characterized in that, If the bonding process parameters are within the range of the bonding process parameters, and the similarity between the bonding process parameters and the optimal bonding process parameters is lower than the parameter reference threshold, the bonding process parameters are input into the bonding simulation model to obtain the bonding success probability, and then sent to the user. Specifically: If the bonding process parameters are within the range of the bonding process parameters, compare the similarity between the bonding process parameters and the optimal bonding process parameters; If the difference between any bonding process parameter and the corresponding optimal bonding process parameter is greater than the preset alarm ratio, the bonding process parameter is input into the bonding simulation model to obtain the bonding success probability. If the bonding success probability is lower than the preset parameter simulation pass threshold, a parameter reminder message is generated based on the bonding success probability and the bonding process parameters and sent to the user. If the bonding success probability is higher than the preset parameter simulation pass threshold, a parameter reminder message is generated based on the bonding process parameters and sent to the user.

7. The semiconductor bonding equipment operation control method as described in claim 6, characterized in that, Also includes: The number of bonding process parameters whose difference from the corresponding optimal bonding process parameter is greater than a preset alarm ratio is counted. If the number of process parameters exceeds the preset number of parameter deviations, a bonding process parameter deviation reminder message is generated and sent to the user.

8. The semiconductor bonding equipment operation control method as described in claim 1, characterized in that, Also includes: The temperature change rate for each temperature change stage is obtained based on the bonding process parameters input by the user. If the rate of temperature change in any temperature change phase exceeds the temperature change threshold of the bonding device, a temperature unreachable alert message will be generated and sent to the user.

9. The semiconductor bonding equipment operation control method as described in claim 1, characterized in that, Also includes: The pressure change rate for each pressure change stage is obtained based on the bonding process parameters input by the user. If the rate of pressure change in any pressure change phase exceeds the pressure change threshold of the bonding equipment, a pressure unreachable warning message will be generated and sent to the user.

10. The semiconductor bonding equipment operation control method as described in claim 1, characterized in that, Also includes: After the first and second chips to be processed are bonded, the temperature of the bonding equipment chamber is obtained from the feedback of the process automation module. If the temperature of the bonding equipment chamber is lower than the preset sampling temperature, a sampling reminder message will be sent to the user.

11. A semiconductor bonding chip alignment virtual simulation control method, wherein the semiconductor bonding chip alignment virtual simulation control method is applied to a bonding chip alignment simulation system, the bonding chip alignment simulation system comprising a user operator and a mobile terminal with a display, characterized in that, The semiconductor bonding chip alignment virtual simulation control method is applied to the semiconductor bonding equipment operation control method as described in any one of claims 1-10, and the semiconductor bonding chip alignment virtual simulation control method includes: Based on the bonding simulation task, retrieve the first sample image and the second sample image after the bonding equipment has finished sample loading; Based on the movement of the user's controller in the XY axis direction, the first sample image is traversed to locate the first marked area, and the second sample image is traversed to locate the second marked area. Adjust the position of the first marking area based on the sample movement information fed back by the user's operator; If the relative distance between the precision marker points of the first and second markers after adjustment increases, an alignment prompt message is generated by combining the distance between the precision marker points of the first and second markers. If the relative distance between the alignment marks of the first and second marks decreases after adjustment, and the alignment accuracy of the first and second marks meets the accuracy requirements of the bonding simulation task, the semiconductor bonding chip alignment simulation is successful.

12. The semiconductor bonding chip alignment virtual simulation control method as described in claim 11, characterized in that, The specific steps of adjusting the position of the first marked area based on the sample movement information fed back by the user operator are as follows: Adjust the step size corresponding to each operation step in the user operator according to the alignment accuracy of the first and second marks; The displacement information of the first marked area is obtained by combining the step size of the operation step and the sample movement information fed back by the user operator.

13. The semiconductor bonding chip alignment virtual simulation control method as described in claim 12, characterized in that, Also includes: If step size adjustment information is received from the user's operator, retrieve the user's historical operation records on the bonding equipment and the assessment results of the bonding equipment; If the user's success rate in the historical operation record of the bonding device is greater than the first set threshold, and the user's assessment result in the bonding device is higher than the second set threshold, the step size corresponding to each operation step in the user operator is adjusted in combination with the step size adjustment information and the alignment accuracy of the first and second marks. If the user's success rate in the historical operation record of the bonding device is lower than the first set threshold, or the user's assessment result in the bonding device is lower than the second set threshold, and the step size adjustment information is to increase the step size corresponding to each operation step, a prompt message indicating that the step size adjustment has failed will be generated.

14. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the steps of the semiconductor bonding device operation control method according to any one of claims 1-10 or the semiconductor bonding chip alignment virtual control method according to any one of claims 11-13.

15. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it executes the semiconductor bonding device operation control method according to any one of claims 1-10 or the semiconductor bonding chip alignment virtual simulation control method according to any one of claims 11-13.

Images