Flip-chip diode structure and manufacturing method
By forming arc-shaped grooves on both sides of the substrate and covering them with a dielectric layer, the problem of solder overflow and short circuit during the die bonding process of flip-chip Zener diodes is solved, thereby improving the yield of the packaging process and the reliability of the components.
CN122094119APending Publication Date: 2026-05-26TAIWAN ASIA SEMICONDUCTOR CORPORATION
View PDF 0 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TAIWAN ASIA SEMICONDUCTOR CORPORATION
- Filing Date
- 2025-02-07
- Publication Date
- 2026-05-26
Smart Images
Figure CN122094119A_ABST
Abstract
This invention provides a flip-chip diode structure and its manufacturing method. The flip-chip diode structure includes a substrate, two junction regions, two metal electrodes, and a dielectric layer. The substrate has two arc-shaped grooves, respectively disposed on its two side edges. The two junction regions are disposed within the substrate. The two metal electrodes are respectively disposed on the same side of the substrate and electrically connected to one of the two junction regions. The dielectric layer covers the upper surface of the substrate between the two arc-shaped grooves and the two metal electrodes. Each of the two arc-shaped grooves is adjacent to the outer side of one of the two metal electrodes, and the maximum depth of the two junction regions within the substrate is less than the depth of the two arc-shaped grooves.
Need to check novelty before this filing date? Find Prior Art