Plasma processing apparatus, power supply system and control method

By periodically modulating the high-frequency electrical power and frequency in the plasma processing device and adjusting the frequency using a feedback mechanism, the problem of high-frequency electrical power reflection was solved, thereby improving the efficiency and energy utilization of plasma processing.

CN122095748APending Publication Date: 2026-05-26TOKYO ELECTRON LTD
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Patent Information

Application Number
CN202480069307.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-11-10
Filing Date
2024-11-05
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

In existing technologies, high-frequency electrical power is easily reflected in plasma processing devices, leading to decreased efficiency and energy loss.

Method used

By introducing a power control unit into the plasma processing device, the power level and frequency of high-frequency electric power are periodically modulated, and the frequency is adjusted using a feedback mechanism to suppress the reflection of high-frequency electric power, including frequency adjustment during multiple sub-periods and feedback periods.

Benefits of technology

It effectively suppressed the reflection of high-frequency electrical power, improving the efficiency and energy utilization of plasma processing.

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Abstract

The power supply system of the plasma processing apparatus of the present invention includes a high-frequency power supply, a bias power supply, and a power control unit. The high-frequency power supply is capable of generating high-frequency electrical power for plasma generation. The bias power supply is capable of supplying electrical bias to the substrate support. The power control unit is capable of periodically modulating the power level of the high-frequency electrical power during repetitions of a modulation cycle comprising at least two sub-periods. The power control unit is capable of adjusting the frequency of the high-frequency electrical power used in the nth phase period within the modulation cycle included in the feedback period continuing from the start time of each of the at least two sub-periods, based on changes in the frequency of the high-frequency electrical power in the nth phase period during repetitions of the preceding modulation cycle and changes in the degree of reflection of the high-frequency electrical power.
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Citation Information

Patent Citations

  • Plasma processing apparatus, plasma processing method, and computer readable storage medium

    JP2009246091A