Backside illumination sensor and method of manufacturing the same

CN122095764APending Publication Date: 2026-05-26KLA CORP
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202480059309.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-10-28
Filing Date
2024-10-29
Publication Date
2026-05-26

Smart Images

  • Figure CN122095764A_ABST
    Figure CN122095764A_ABST
Patent Text Reader

Abstract

An image sensor includes a p-type silicon layer, a silicon layer disposed on the p-type silicon layer, a p-type SiGe layer disposed on the p-type silicon layer, a boron layer disposed on the p-type SiGe layer, and an anti-reflective coating disposed on the boron layer. Trenches can be formed in the image sensor such that the boron layer is disposed in the trenches.
Need to check novelty before this filing date? Find Prior Art