Display device

Abstract

A display device according to one embodiment includes a substrate, a first electrode disposed on the substrate, a pixel definition layer covering edges of the first electrode and separating a light emitting area and a non-light emitting area, a light emitting layer disposed on the first electrode and the pixel definition layer, a second electrode disposed on the light emitting layer, a thin film encapsulation layer disposed on the second electrode and including a first encapsulation layer, a second encapsulation layer disposed on the first encapsulation layer, and a third encapsulation layer disposed on the second encapsulation layer, and a wavelength conversion layer disposed on the thin film encapsulation layer and including a bank overlapping the non-light emitting area, wherein the second encapsulation layer includes a first region overlapping the light emitting area and a second region not overlapping the light emitting area, and a thickness of the first region is greater than a thickness of the second region.

Description

Technical Field

[0001] This disclosure relates to display devices. Background Technology

[0002] With the development of an information-oriented society, the demand for display devices is constantly increasing. For example, display devices are being used in various electronic devices such as smartphones, digital cameras, laptops, navigation devices, and smart TVs.

[0003] Display devices can be flat panel display devices, such as liquid crystal displays, field emission displays, and light-emitting displays. Light-emitting display devices include organic light-emitting display devices containing organic light-emitting elements, inorganic light-emitting display devices containing inorganic light-emitting elements such as inorganic semiconductors, and micro-light-emitting display devices containing micro-light-emitting elements.

[0004] An organic light-emitting element may include two opposing electrodes and a light-emitting layer interposed therebetween. Electrons and holes supplied from the two electrodes recombine in the light-emitting layer to generate excitons, and the generated excitons relax from the excited state to the ground state, thereby emitting light.

[0005] Organic light-emitting display devices, which include organic light-emitting elements, do not require separate light sources such as backlight units. Therefore, they consume less power and can be made lighter and thinner, exhibiting high-quality characteristics such as wide viewing angles, high brightness and contrast, and fast response times. Consequently, organic light-emitting display devices are attracting attention as the next generation of display devices. Summary of the Invention

[0006] Technical issues

[0007] The purpose of this invention is to provide a display device that can improve the color gamut by reducing color mixing.

[0008] The purpose of this invention is not limited to the above-described purpose, and other technical purposes not explicitly mentioned will be clearly understood by those skilled in the art from the following description.

[0009] Technical solution

[0010] According to an aspect of this disclosure, a display device includes: a substrate; a first electrode disposed on the substrate; a pixel defining layer covering the edge of the first electrode and defining a light-emitting region and a non-light-emitting region; a light-emitting layer disposed on the first electrode and the pixel defining layer; a second electrode disposed on the light-emitting layer; a thin-film encapsulation layer disposed on the second electrode and including a first encapsulation layer, a second encapsulation layer disposed on the first encapsulation layer, and a third encapsulation layer disposed on the second encapsulation layer; and a wavelength conversion layer disposed on the thin-film encapsulation layer and including a dam overlapping the non-light-emitting region, wherein the second encapsulation layer includes a first region overlapping the light-emitting region and a second region not overlapping the light-emitting region, and wherein the thickness of the first region is greater than the thickness of the second region.

[0011] The first region overlaps with the non-luminescent region, and the second region also overlaps with the non-luminescent region.

[0012] The first zone does not overlap with the dike, while the second zone overlaps with the dike.

[0013] The thickness of the second zone is between 50% and 90% of the thickness of the first zone.

[0014] The second encapsulation layer includes a groove formed in the surface of the second encapsulation layer, and the groove is located in the second region.

[0015] The first zone covers the luminous area in the plan view and is spaced apart from each other, while the second zone is located in other areas outside the first zone.

[0016] The second zone is spaced apart from each other and positioned between the light-emitting zones that emit different colors of light.

[0017] The display device further includes an encapsulation pattern disposed between the second encapsulation layer and the third encapsulation layer, wherein the encapsulation pattern overlaps with the first region but not with the second region.

[0018] The encapsulation pattern overlaps with the light-emitting area but not with the embankment.

[0019] The display device further includes a fourth encapsulation layer disposed between the first encapsulation layer and the second encapsulation layer, and a fifth encapsulation layer disposed between the fourth encapsulation layer and the second encapsulation layer, wherein the first encapsulation layer, the third encapsulation layer and the fifth encapsulation layer contain inorganic materials, and the second encapsulation layer and the fourth encapsulation layer contain organic materials.

[0020] The first and third encapsulation layers contain inorganic materials, and the second encapsulation layer contains organic materials.

[0021] The wavelength conversion layer includes a light-transmitting pattern, a first wavelength conversion pattern, and a second wavelength conversion pattern disposed in a space defined by the embankment and overlapping with the light-emitting area, respectively.

[0022] The display device further includes: a low-refractive layer disposed on the wavelength conversion layer; and a color filter layer disposed on the low-refractive layer and including a first color filter overlapping with a light-transmitting pattern, a second color filter overlapping with the first wavelength conversion pattern, and a third color filter overlapping with the second wavelength conversion pattern.

[0023] According to an aspect of this disclosure, a display device includes: a substrate; a first electrode disposed on the substrate; a pixel defining layer covering the edge of the first electrode and defining a light-emitting region and a non-light-emitting region; a light-emitting layer disposed on the first electrode and the pixel defining layer; a second electrode disposed on the light-emitting layer; a thin-film encapsulation layer disposed on the second electrode and including a first encapsulation layer, an etch stop layer disposed on the first encapsulation layer, a second encapsulation layer disposed on the etch stop layer, and a third encapsulation layer disposed on the second encapsulation layer; and a wavelength conversion layer disposed on the thin-film encapsulation layer and including a dam overlapping the non-light-emitting region, wherein the third encapsulation layer contacts the etch stop layer in the non-light-emitting region.

[0024] The second encapsulation layer includes an opening that exposes the etch stop layer, and the third encapsulation layer contacts the etch stop layer through the opening.

[0025] The opening overlaps with the non-luminous area and the embankment.

[0026] The second encapsulation layer is disposed between the etch stop layer and the third encapsulation layer, and is covered by the etch stop layer and the third encapsulation layer.

[0027] The display device further includes a fourth encapsulation layer disposed between the first encapsulation layer and the etch stop layer, wherein the second encapsulation layer and the fourth encapsulation layer contain organic materials.

[0028] According to an aspect of this disclosure, a display device includes: a substrate; a first electrode disposed on the substrate; a pixel defining layer covering the edge of the first electrode and defining a light-emitting region and a non-light-emitting region; a light-emitting layer disposed on the first electrode and the pixel defining layer; a second electrode disposed on the light-emitting layer; a thin-film encapsulation layer disposed on the second electrode and including a first encapsulation layer, a second encapsulation layer and an organic layer disposed on the first encapsulation layer and spaced apart from each other, and a third encapsulation layer disposed on the second encapsulation layer and the organic layer; and a wavelength conversion layer disposed on the thin-film encapsulation layer and including a dam overlapping the non-light-emitting region, wherein the third encapsulation layer contacts the first encapsulation layer in the non-light-emitting region.

[0029] The second encapsulation layer overlaps with the non-light-emitting area and the embankment and includes an opening that exposes the first encapsulation layer, wherein an organic layer is disposed in the opening and in contact with the first encapsulation layer.

[0030] The third encapsulation layer covers the second encapsulation layer and the organic layer, and contacts the first encapsulation layer through an opening.

[0031] The opening is filled with a dam on the third encapsulation layer.

[0032] The thickness of the organic layer is less than the thickness of the second encapsulation layer.

[0033] The first and third encapsulation layers contain inorganic materials, and the second encapsulation layer contains organic materials.

[0034] Other features and embodiments will be apparent from the following detailed description and accompanying drawings.

[0035] Beneficial effects

[0036] According to embodiments of this disclosure, a second region is formed in the second encapsulation layer of the thin-film encapsulation layer. The second region has a groove formed therein, and a dam is formed on the groove in the display device, thereby blocking light emitted from the light-emitting region to the adjacent light-emitting region. Therefore, color mixing between the light-emitting regions of the display device can be prevented to improve the color gamut.

[0037] Furthermore, according to embodiments of this disclosure, an etch stop layer can be formed on the thin-film encapsulation layer in the display device, thereby preventing damage to the underlying layer while etching the opening of the second encapsulation layer.

[0038] The effects of the embodiments are not limited to those illustrated above, and this disclosure includes many more effects. Attached Figure Description

[0039] Figure 1 This is a plan view of a display device according to an embodiment of the present disclosure.

[0040] Figure 2 This is a schematic view illustrating lines included in a display device according to an embodiment of the present disclosure.

[0041] Figure 3 This is an equivalent circuit diagram of a sub-pixel according to an embodiment of the present disclosure.

[0042] Figure 4 This is a schematic cross-sectional view of a display device according to an embodiment.

[0043] Figure 5 This is a schematic cross-sectional view of a display device according to an embodiment.

[0044] Figure 6 This is a schematic cross-sectional view showing a portion of the first light-emitting area of ​​a display device according to an embodiment.

[0045] Figure 7 This is a plan view schematically showing an example of the light-emitting area of ​​a display device according to an embodiment.

[0046] Figure 8 This is a plan view schematically showing another example of the light-emitting area of ​​a display device according to an embodiment.

[0047] Figure 9 This is a schematic cross-sectional view showing a portion of the first light-emitting area of ​​a display device according to an embodiment.

[0048] Figure 10 This is a schematic cross-sectional view of a display device according to another embodiment.

[0049] Figure 11 It is shown schematically. Figure 10 A cross-sectional view of a portion of the first luminescent region.

[0050] Figure 12 This is a schematic cross-sectional view of a display device according to yet another embodiment.

[0051] Figure 13 It is shown schematically. Figure 12 A cross-sectional view of a portion of the first luminescent region.

[0052] Figure 14 This is a plan view showing the layout of the light-emitting area of ​​a display device according to another embodiment of the present disclosure.

[0053] Figure 15 and Figure 16 This is a cross-sectional view showing the processing steps of a method for manufacturing a thin-film encapsulation layer in a display device according to another embodiment of the present disclosure.

[0054] Figure 17 This is a cross-sectional view showing a display device according to another embodiment.

[0055] Figure 18 It is shown schematically. Figure 17 A cross-sectional view of a portion of the first luminescent region.

[0056] Figure 19 This is a plan view showing the layout of the light-emitting area of ​​a display device according to another embodiment of the present disclosure.

[0057] Figure 20 This is a cross-sectional view showing a display device according to another embodiment.

[0058] Figure 21 It is shown schematically. Figure 20 A cross-sectional view of a portion of the first luminescent region.

[0059] Figure 22 This is a schematic cross-sectional view of a display device according to yet another embodiment.

[0060] Figure 23 It is shown schematically. Figure 22 A cross-sectional view of a portion of the first luminescent region.

[0061] Figure 24 This is a plan view showing the layout of the light-emitting area of ​​a display device according to another embodiment of the present disclosure. Detailed Implementation

[0062] The advantages and features of the present invention, as well as the methods for implementing them, will become apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be practiced in various different forms, and only these embodiments are provided so that this disclosure is complete and fully informs those skilled in the art of the scope of the invention, which is defined by the scope of the claims.

[0063] When an element or layer is referred to as being "on top of" another element or layer, this includes both cases where it is directly on top of the other element and cases where another layer or element is inserted between them. Similarly, references to another element as "below," "left," and "right" include both cases where they are directly adjacent and cases where another layer or material is inserted between them. Throughout the specification, the same reference numerals denote the same components.

[0064] Although terms such as "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, within the technical spirit of the present invention, the "first component" mentioned below can also be the "second component."

[0065] In the following description, exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0066] Figure 1 This is a plan view of a display device according to an embodiment of the present disclosure.

[0067] refer to Figure 1 The display device 10 according to embodiments of this disclosure can be applied to smartphones, mobile phones, tablet PCs, personal digital assistants (PDAs), portable multimedia players (PMPs), televisions, game consoles, watch-type electronic devices, head-mounted displays, personal computer monitors, laptop computers, car navigation systems, car dashboards, digital cameras, camcorders, outdoor billboards, electronic billboards, various medical devices, various household appliances such as refrigerators and washing machines, Internet of Things (IoT) devices, etc. In the following description, a television is described as an example of the display device 10. A TV can have high resolution or ultra-high resolution, such as HD, UHD, 4K, and 8K.

[0068] Furthermore, the display device 10 according to the embodiments can be classified differently based on the manner in which it displays images. Examples of classifications of the display device 10 may include organic light-emitting display devices (OLED), inorganic light-emitting display devices (EL), quantum dot light-emitting display devices (QED), micro-LED display devices (microLED), nano-LED display devices (nanoLED), plasma display devices (PDP), field emission display devices (FED), cathode ray display devices (CRT), liquid crystal display devices (LCD), electrophoretic display devices (EPD), etc. In the following description, organic light-emitting display devices and inorganic light-emitting display devices will be described as examples of the display device 10, and such light-emitting display devices will be simply referred to as display devices unless it is necessary to distinguish between them. However, it should be understood that the embodiments of this disclosure are not limited to organic light-emitting display devices or inorganic light-emitting display devices, and any of the display devices listed above or any other display devices known in the art may be used without departing from the scope of this disclosure.

[0069] According to an embodiment, when viewed from above, the display device 10 may have a square shape, such as a rectangular shape. When the display device 10 is a television, it is oriented such that its long side is positioned in the horizontal direction. However, it should be understood that this disclosure is not limited thereto. The long side may be positioned in the vertical direction. Optionally, the display device 10 may be rotatably mounted such that the long side is variably positioned in the horizontal or vertical direction.

[0070] Display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an effective area for displaying images. When viewed from above, the display area DPA may have a rectangular shape, but is not limited to, a shape similar to the overall shape of display device 10.

[0071] The display area DPA may include multiple pixels PX. The multiple pixels PX may be arranged in a matrix. When viewed from above, the shape of each pixel PX may be, but is not limited to, a rectangle or a square. Each pixel PX may have a rhombus shape with an edge slanted relative to one side of the display device 10. The multiple pixels PX may include pixels PX of different colors. For example, the multiple pixels PX may include, but is not limited to, red first-color pixels PX, green second-color pixels PX, and blue third-color pixels PX. The colored pixels PX may be arranged in an RGB stripe pattern or a PenTile. TM The matrices are arranged alternately.

[0072] The non-display area NDA can be disposed around the display area DPA. The non-display area NDA can surround the display area DPA wholly or partially. The display area DPA can have a rectangular shape, and the non-display area NDA can be disposed adjacent to the four sides of the display area DPA. The non-display area NDA can form the border of the display device 10.

[0073] In the non-display area NDA, a driving circuit or driving element for driving the display area DPA can be provided. According to an embodiment of this disclosure, in the first long side of the display device 10 ( Figure 1 The first non-display area NDA1 is arranged adjacent to the lower side of the display device 10, and the second long side of the display device 10 is adjacent to the lower side of the display device 10. Figure 1 In the second non-display area NDA2, which is adjacent to the upper side of the display device 10, a pad area is provided on the display substrate of the display device 10. An external device EXD can be mounted on the pad electrodes of the pad area. Examples of external devices EXD may include connection films, printed circuit boards, driver chips (DIC), connectors, wire connection films, etc. A scan driver SDR, formed directly on the display substrate of the display device 10, can be positioned adjacent to the first short side of the display device 10 (the upper side of the display device 10). Figure 1 The third non-display area NDA3 is disposed adjacent to the left side of the display device 10. 1). However, it should be understood that this disclosure is not limited thereto. The scan driver SDR may be disposed adjacent to the second short side of the display device 10 ( Figure 1 On the right side of the image, the fourth non-display area NDA4 is adjacent to it.

[0074] Figure 2 This is a schematic view illustrating lines included in a display device according to an embodiment of the present disclosure.

[0075] refer to Figure 2 The display device 10 may include multiple lines. These lines may include a scan line SCL, a sensing line SSL, a data line DTL, an initialization voltage line VIL, a first voltage line VDL, a second voltage line VSL, etc. Furthermore, although not shown in the figures, other lines may also be provided in the display device 10.

[0076] Scan line SCL and sensing line SSL can extend along the first direction DR1. Scan line SCL and sensing line SSL can be connected to scan driver SDR. Scan driver SDR may include driving circuitry. Scan driver SDR may be positioned on one side of display area DPA along the first direction DR1, but is not limited thereto. Scan driver SDR can be connected to signal connection line CWL, and at least one end of signal connection line CWL can form pad WPD_CW on pad area PDA in non-display area for connection to external devices.

[0077] As used herein, when an element is referred to as “connected” or “coupled” to another element, it may be directly connected to or coupled to that element, or there may be an intervening element. Furthermore, such an element can be understood as a single integrated element, and thus one part of it is connected to another. Additionally, when an element is referred to as “connected” to another element, it may be in direct contact with that element and also electrically connected to it.

[0078] The data line DTL and the initialization voltage line VIL can extend in a second direction DR2, intersecting the first direction DR1. The initialization voltage line VIL can include a branch in the first direction DR1 and a portion extending in the second direction DR2. Each of the first voltage line VDL and the second voltage line VSL can also include a portion extending in the second direction DR2 and a portion connected to that portion and extending in the first direction DR1. The first voltage line VDL and the second voltage line VSL can have, but are not limited to, a mesh structure. Although not shown in the figures, each of the pixels PX of the display device 10 can be connected to at least one data line DTL, an initialization voltage line VIL, a first voltage line VDL, and a second voltage line VSL.

[0079] The data line DTL, initialization voltage line VIL, first voltage line VDL, and second voltage line VSL can be electrically connected to one or more wiring pads WPD. The wiring pads WPD can be located in the pad area PDA. According to an embodiment of this disclosure, the wiring pad WPD_DT (hereinafter referred to as the data pad) of the data line DTL can be located in the pad area PDA on one side of the display area DPA in the second direction DR2, and the wiring pad WPD_Vint (hereinafter referred to as the initialization voltage pad) of the initialization voltage line VIL, the wiring pad WPD_VDD (hereinafter referred to as the first power pad) of the first voltage line VDL, and the wiring pad WPD_VSS (hereinafter referred to as the second power pad) of the second voltage line VSL can be located in the pad area PDA on the other side of the display area DPA in the second direction DR2. As another example, the data pad WPD_DT, the initialization voltage pad WPD_Vint, the first power pad WPD_VDD, and the second power pad WPD_VSS can all be located in the same area, for example, in the non-display area NDA above the display area DPA. External devices EXD can be mounted on the wiring pad WPD. External devices EXD can be mounted on the wiring pad WPD via anisotropic conductive films, ultrasonic bonding, etc.

[0080] Each of the pixels PX or sub-pixels SPX of the display device 10 includes a pixel driving circuit. The aforementioned lines may pass through each of the pixels PX or its periphery to apply a driving signal to the pixel driving circuit. The pixel driving circuit may include transistors and capacitors. The number of transistors and capacitors in each pixel driving circuit can be varied in various ways. According to embodiments of this disclosure, each of the sub-pixels SPX of the display device 10 may have a 3T1C structure, that is, the pixel driving circuit includes three transistors and one capacitor. In the following description, a pixel driving circuit with a 3T1C structure will be described as an example. However, it should be understood that this disclosure is not limited thereto. Various modified pixel structures, such as 2T1C, 7T1C, and 6T1C structures, can be employed.

[0081] Figure 3 This is an equivalent circuit diagram of a sub-pixel according to an embodiment of the present disclosure.

[0082] refer to Figure 3 In addition to the light-emitting element ED, each of the sub-pixels SPX of the display device 10 according to the embodiment also includes three transistors DTR, STR1 and STR2 and a storage capacitor CST.

[0083] An LED emits light in proportion to the current supplied through a driving transistor (DTR). LEDs can be implemented as inorganic LEDs, organic LEDs, micro LEDs, nano LEDs, etc.

[0084] The first electrode (i.e., the anode electrode) of the light-emitting element ED can be connected to the source electrode of the driving transistor DTR, and its second electrode (i.e., the cathode electrode) can be connected to the second power line ELVSL. A low-level voltage (second power supply voltage) lower than the high-level voltage (first power supply voltage) of the first power line ELVDL is applied from the second power line ELVSL.

[0085] The driving transistor DTR adjusts the current flowing from the first power line ELVDL to the light-emitting element ED based on the voltage difference between the gate electrode and the source electrode. The first power supply voltage is applied from the first power line ELVDL. The gate electrode of the driving transistor DTR can be connected to the first electrode of the first transistor STR1, the source electrode can be connected to the first electrode of the light-emitting element ED, and the drain electrode can be connected to the first power line ELVDL from which the first power supply voltage is applied.

[0086] The first transistor STR1 is turned on by the scan signal of the scan line SCL to connect the data line DTL to the gate electrode of the driving transistor DTR. The gate electrode of the first transistor STR1 can be connected to the scan line SCL, its first electrode can be connected to the gate electrode of the driving transistor DTR, and its second electrode can be connected to the data line DTL.

[0087] The second transistor STR2 can be turned on by the sensing signal of the sensing signal line SSL to connect the initialization voltage line VIL to the source electrode of the driving transistor DTR. The gate electrode of the second transistor STR2 can be connected to the sensing signal line SSL, its first electrode can be connected to the initialization voltage line VIL, and its second electrode can be connected to the source electrode of the driving transistor DTR.

[0088] According to embodiments of this disclosure, the first electrode of each of the first transistor STR1 and the second transistor STR2 can be a source electrode, and its second electrode can be a drain electrode. However, it should be understood that this disclosure is not limited thereto. The first electrode of each of the first transistor STR1 and the second transistor STR2 can be a drain electrode, and its second electrode can be a source electrode.

[0089] A storage capacitor CST can be formed between the gate and source electrodes of the driving transistor DTR. The storage capacitor CST stores the voltage difference between the gate voltage and the source voltage of the driving transistor DTR.

[0090] The driving transistor DTR, as well as the first transistor STR1 and the second transistor STR2, can be formed as thin-film transistors. Furthermore, although... Figure 3 The diagram shows that each of the driving transistor DTR, the first switching transistor STR1, and the second switching transistor STR2 is implemented as an N-type MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). However, it should be noted that this disclosure is not limited thereto. That is, the driving transistor DTR, the first switching transistor STR1, and the second switching transistor STR2 can be implemented as P-type MOSFETs, or some of them can be implemented as N-type MOSFETs while the others can be implemented as P-type MOSFETs.

[0091] Figure 4 This is a schematic cross-sectional view of a display device according to an embodiment.

[0092] refer to Figure 4 The display device 10 according to the embodiments of the present disclosure may include a substrate SUB, an emissive material layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a low refractive index layer LRL, a color filter layer CFL, and an optical functional layer LFL.

[0093] The substrate SUB can be an insulating substrate. The substrate SUB can include transparent materials. For example, the substrate SUB can include transparent insulating materials such as glass and quartz. The substrate SUB can be a rigid substrate. Furthermore, the substrate SUB is not limited to those mentioned above. The substrate SUB can include plastics such as polyimide, or it can be flexible, allowing it to be bent, folded, or rolled.

[0094] The emissive material layer (EML) can be disposed on the substrate (SUB). The EML can include multiple switching elements and multiple light-emitting elements (EDs) disposed in each sub-pixel. The switching elements can drive the EDs, causing the EDs to emit light.

[0095] A thin-film encapsulation layer (TFEL) can be disposed on the emitter material layer (EML). The TFEL may include an organic film disposed between multiple inorganic films and can protect the emitter material layer (EML) from external moisture and oxygen.

[0096] The wavelength conversion layer (WCL) can be disposed on the thin-film encapsulation layer (TFEL). The WCL can convert the wavelength of light emitted from the emissive material layer (EML) to emit red, green, and blue light.

[0097] A low-refractive-index (LRL) layer can be placed on the wavelength conversion layer (WCL). The LRL layer can have a relatively low refractive index. Due to the difference in refractive index, light emitted from below it can be refracted towards the top, thus improving the emission efficiency of the LRL layer.

[0098] A color filter layer (CFL) can be placed on a low-refractive-index layer (LRL). The CFL filters light incident from the outside to reduce external light reflection and improves the color characteristics of light emitted through the wavelength conversion layer (WCL).

[0099] The optical functional layer LFL can be disposed on the color filter layer CFL. The optical functional layer LFL can be an anti-reflective layer that prevents the reflection of external light. The optical functional layer LFL can be attached in the form of a film or formed by coating. However, it should be understood that this disclosure is not limited thereto. An anti-fingerprint layer, etc., can also be disposed.

[0100] Figure 5 This is a schematic cross-sectional view of a display device according to an embodiment. Figure 6 This is a schematic cross-sectional view showing a portion of the first light-emitting area of ​​a display device according to an embodiment. Figure 7 This is a plan view schematically showing an example of the light-emitting area of ​​a display device according to an embodiment. Figure 8 This is a plan view schematically showing another example of the light-emitting area of ​​a display device according to an embodiment. Figure 9 This is a schematic cross-sectional view showing a portion of the first light-emitting area of ​​a display device according to an embodiment.

[0101] refer to Figure 5 and Figure 6The display device 10 according to the embodiments of the present disclosure may include a substrate SUB, an emissive material layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a low refractive index layer LRL, a color filter layer CFL, and an optical functional layer LFL.

[0102] Multiple light-emitting regions LA1, LA2, and LA3, and a non-light-emitting region NLA can be defined on the substrate SUB. Light generated by light-emitting elements ED1, ED2, and ED3 can be emitted from the light-emitting regions LA1, LA2, and LA3. No light can be emitted from the non-light-emitting region NLA. According to an embodiment, the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 can be arranged in this order in the first direction DR1 within the display area DPA.

[0103] The first luminescent region LA1, the second luminescent region LA2, and the third luminescent region LA3 may have different widths measured in the first direction DR1. For example, the width of the first luminescent region LA1 may be smaller than the width of the third luminescent region LA3, and the width of the third luminescent region LA3 may be smaller than the width of the second luminescent region LA2. However, it should be understood that this disclosure is not limited thereto. The first luminescent region LA1, the second luminescent region LA2, and the third luminescent region LA3 may have the same width measured in the first direction DR1.

[0104] The emitting regions LA1, LA2, and LA3 can emit light of different colors. According to embodiments of this disclosure, the first emitting region LA1 can emit light of a first color, the second emitting region LA2 can emit light of a second color, and the third emitting region LA3 can emit light of a third color. According to embodiments, the first color light can be blue light having a peak wavelength in the range of approximately 440 nm to 480 nm, and the second color light can be red light having a peak wavelength in the range of approximately 610 nm to 650 nm. Furthermore, the third color light can be green light having a peak wavelength in the range of approximately 510 nm to 550 nm. However, it should be understood that this disclosure is not limited thereto. The second color light can be green light, and the third color light can be red light.

[0105] Switching elements T1, T2, and T3 can be disposed on the substrate SUB. According to embodiments of this disclosure, the first switching element T1 can be located in the first light-emitting region LA1 of the substrate SUB, the second switching element T2 can be located in the second light-emitting region LA2, and the third switching element T3 can be located in the third light-emitting region LA3. However, it should be understood that this disclosure is not limited thereto. In other embodiments, at least one of the first switching element T1, the second switching element T2, and the third switching element T3 can be located in the non-light-emitting region NLA.

[0106] According to embodiments of this disclosure, each of the first switching element T1, the second switching element T2, and the third switching element T3 may be a thin-film transistor comprising amorphous silicon, polycrystalline silicon, or oxide semiconductor. Although not shown in the figures, multiple signal lines (e.g., gate lines, data lines, power lines, etc.) for transmitting signals to the switching elements may be further disposed on the substrate SUB. Furthermore, the switching elements T1, T2, and T3 may include a first insulating layer 120. For example, the first insulating layer 120 may be a gate insulator or an interlayer dielectric film of the thin-film transistor. The gate insulator or interlayer dielectric film may be composed of a single layer or multiple layers thereof comprising one of silicon oxide (SiOx), silicon oxide nitride (SiOxNy), and silicon nitride (SiNx).

[0107] The second insulating layer 130 may be disposed on the first switching element T1, the second switching element T2, and the third switching element T3. According to embodiments of the present disclosure, the second insulating layer 130 may be a planarization film. According to embodiments of the present disclosure, the second insulating layer 130 may be formed as an organic film. For example, the second insulating layer 130 may include acrylic resin, epoxy resin, imide resin, ester resin, etc. According to embodiments of the present disclosure, the second insulating layer 130 may include positive photoresist or negative photoresist.

[0108] A first anode electrode AE1, a second anode electrode AE2, and a third anode electrode AE3 can be disposed on the second insulating layer 130. The first anode electrode AE1 can be disposed in the first light-emitting region LA1 and can extend at least partially into the non-light-emitting region NLA. The second anode electrode AE2 can be disposed in the second light-emitting region LA2 and can extend at least partially into the non-light-emitting region NLA. The third anode electrode AE3 can be disposed in the third light-emitting region LA3 and can extend at least partially into the non-light-emitting region NLA. The first anode electrode AE1 can pass through the second insulating layer 130 and be connected to the first switching element T1, the second anode electrode AE2 can pass through the second insulating layer 130 and be connected to the second switching element T2, and the third anode electrode AE3 can pass through the second insulating layer 130 and be connected to the third switching element T3.

[0109] According to embodiments of this disclosure, the widths or areas of the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be different from each other. For example, the width of the first anode electrode AE1 may be smaller than the width of the second anode electrode AE2, and the width of the third anode electrode AE3 may be smaller than the width of the second anode electrode AE2 and larger than the width of the first anode electrode AE1. Optionally, the area of ​​the first anode electrode AE1 may be smaller than the area of ​​the second anode electrode AE2, and the area of ​​the third anode electrode AE3 may be smaller than the area of ​​the second anode electrode AE2 and larger than the area of ​​the first anode electrode AE1. Optionally, the area of ​​the first anode electrode AE1 may be smaller than the area of ​​the second anode electrode AE2, and the area of ​​the third anode electrode AE3 may be larger than the areas of both the second anode electrode AE2 and the first anode electrode AE1. However, it should be understood that this disclosure is not limited to the above embodiments. According to another embodiment of this disclosure, the widths or areas of the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be substantially all equal.

[0110] The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can be reflective electrodes. The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can have a stacked structure of a material layer with a high work function and a reflective material layer. The material layer with a high work function is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), and indium oxide (In2O3). The reflective material layer is, for example, silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or mixtures thereof. The material layer with a high work function can be disposed on a layer higher than the reflective material layer, so that it can be close to the light-emitting layer OL. The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can have, but are not limited to, a multilayer structure of ITO / Mg, ITO / MgF, ITO / Ag, and ITO / Ag / ITO.

[0111] The pixel defining layer 150 can be located on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3. The pixel defining layer 150 may include openings exposing the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3, and may define a first light-emitting region LA1, a second light-emitting region LA2, a third light-emitting region LA3, and a non-light-emitting region NLA. That is, the exposed portion of the first anode electrode AE1 not covered by the pixel defining layer 150 can be the first light-emitting region LA1. The exposed portion of the second anode electrode AE2 not covered by the pixel defining layer 150 can be the second light-emitting region LA2. The exposed portion of the third anode electrode AE3 not covered by the pixel defining layer 150 can be the third light-emitting region LA3. The remaining portions of the pixel defining layer 150 can be the non-light-emitting region NLA.

[0112] The pixel defining layer 150 may include organic insulating materials such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polystyrene resin, polyphenylene sulfide resin, and benzocyclobutene (BCB).

[0113] According to embodiments of this disclosure, the pixel defining layer 150 may overlap with the dam 180 of the wavelength conversion layer WCL, which will be described later. The light-emitting layer OL may be disposed on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3. In embodiments where the display device 10 is an organic light-emitting display device, the light-emitting layer OL may include an organic layer comprising organic materials. In some embodiments, the organic layer includes an organic emitting layer and may further include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer as an auxiliary layer to promote light emission.

[0114] According to embodiments of this disclosure, the light-emitting layer OL can have a tandem structure, comprising a plurality of organic emitting layers overlapping each other in the thickness direction and a charge-generating layer disposed therebetween. The overlapping organic emitting layers can emit light of the same wavelength or light of different wavelengths. For example, the overlapping organic emitting layers may include an organic emitting layer that emits light in the green wavelength range and an organic emitting layer that emits light in the blue wavelength range. According to another embodiment, the overlapping organic emitting layers may include an organic emitting layer that emits light in the red wavelength range, an organic emitting layer that emits light in the green wavelength range, and an organic emitting layer that emits light in the blue wavelength range.

[0115] According to embodiments of this disclosure, the light-emitting layer OL can have the shape of a continuous film disposed across light-emitting regions LA1, LA2, and LA3 and a non-light-emitting region NLA. In this case, the wavelength of light emitted from the light-emitting layer OL can be the same. For example, the light-emitting layer OL can emit blue light, white light, or ultraviolet light from multiple light-emitting regions LA1, LA2, and LA3.

[0116] The cathode electrode CE can be disposed on the light-emitting layer OL. According to embodiments of this disclosure, the cathode electrode CE can be semi-transmissive or transmissive. If the cathode electrode CE is transmissive or reflective, it can comprise Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or compounds or mixtures thereof, such as a mixture of Ag and Mg. Furthermore, if the thickness of the cathode electrode CE is in the range of tens to hundreds of angstroms, the cathode electrode CE can be transmissive or reflective.

[0117] When the cathode electrode CE is transmissive, the cathode electrode CE may include a transparent conductive oxide (TCO). For example, the cathode electrode CE may be formed of tungsten oxide (WxOy), titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO), etc.

[0118] A first anode electrode AE1, a light-emitting layer OL, and a cathode electrode CE can form a first light-emitting element ED1; a second anode electrode AE2, a light-emitting layer OL, and a cathode electrode CE can form a second light-emitting element ED2; and a third anode electrode AE3, a light-emitting layer OL, and a cathode electrode CE can form a third light-emitting element ED3. Each of the first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3 can emit source light. The source light can be provided to the wavelength conversion layer WCL. For example, the source light can be, but is not limited to, blue light. It can be white light or ultraviolet light. The first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3 can be organic light-emitting diodes (OLEDs).

[0119] A thin-film encapsulation layer TFEL can be disposed on the cathode electrode CE. The thin-film encapsulation layer TFEL can be positioned commonly across the first light-emitting region LA1, the second light-emitting region LA2, the third light-emitting region LA3, and the non-light-emitting region NLA. According to an embodiment of this disclosure, the thin-film encapsulation layer TFEL can directly cover the cathode electrode CE.

[0120] According to embodiments of the present disclosure, the thin-film encapsulation layer TFEL may include a first encapsulation layer 171, a second encapsulation layer 173, and a third encapsulation layer 175 sequentially stacked on the cathode electrode CE.

[0121] The first encapsulation layer 171 may be disposed on the cathode electrode CE. The first encapsulation layer 171 may directly cover the cathode electrode CE of the emissive material layer EML, thereby preventing moisture or foreign matter from penetrating into the emissive material layer EML. The first encapsulation layer 171 may include inorganic materials. For example, the first encapsulation layer 171 may include at least one selected from silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. However, it should be understood that this disclosure is not limited thereto.

[0122] A second encapsulation layer 173 may be disposed on the first encapsulation layer 171. The second encapsulation layer 173 can prevent foreign objects or particles from settling on the first encapsulation layer 171 and degrading the encapsulation performance. For example, the second encapsulation layer 173 may be formed to be thick enough to cover foreign objects or particles, thereby preventing degradation of the encapsulation performance.

[0123] The second encapsulation layer 173 may include organic materials. For example, the second encapsulation layer 173 may include acrylic resin, methacrylate resin, polyisoprene, vinyl resin, epoxy resin, polyurethane resin, cellulose resin, naphthalene-containing benzene resin, etc. However, it should be understood that this disclosure is not limited thereto.

[0124] According to embodiments of this disclosure, the second encapsulation layer 173 may include a first region MOL1 and a second region MOL2.

[0125] The first region MOL1 may overlap with the light-emitting regions LA1, LA2, and LA3, and may be the thicker portion of the second encapsulation layer 173. In the first region MOL1, light emitted from the light-emitting elements ED1, ED2, and ED3 can substantially exit into the wavelength conversion layer WCL. Therefore, the first region MOL1 may be positioned to at least cover the light-emitting regions LA1, LA2, and LA3. At least a portion of the first region MOL1 may overlap with the non-light-emitting region NLA. The first region MOL1 may not overlap with the embankment 180 of the wavelength conversion layer WCL, which will be described later.

[0126] The second region MOL2 may not overlap with the light-emitting regions LA1, LA2, and LA3, and may be the portion of the second encapsulation layer 173 that is thinner than the first region MOL1. The second region MOL2 may be located between the light-emitting regions LA1, LA2, and LA3. The second region MOL2 may overlap with the non-light-emitting region NLA. According to some embodiments, the second region MOL2 may completely overlap with the non-light-emitting region NLA. The second region MOL2 may overlap with the embankment 180 of the wavelength conversion layer WCL, which will be described later.

[0127] The second encapsulation layer 173 may include a groove (GRO) formed in its surface. The groove (GRO) may be formed in the second encapsulation layer 173 within the second region MOL2. The groove (GRO) may have a concave shape in the thickness direction from the surface of the second encapsulation layer 173. Due to the groove (GRO), the second region MOL2 may have a smaller thickness than the first region MOL1. The groove (GRO) may overlap with the second region MOL2. According to some embodiments, the groove (GRO) may completely overlap with the second region MOL2. The groove (GRO) may have a predetermined depth. The depth of the groove (GRO) may be the vertical distance from the surface of the first region MOL1 to the surface of the second region MOL2.

[0128] The first region MOL1 may have a first thickness TT1, and the second region MOL2 may have a second thickness TT2. The first thickness TT1 of the first region MOL1 may be greater than the second thickness TT2 of the second region MOL2. For example, the first thickness TT1 may be in the range of 1 to 10 μm, and the second thickness TT2 may be in the range of 50% to 90% of the first thickness TT1. When the first thickness TT1 or the second thickness TT2 is within the above range, foreign matter placed on the first encapsulation layer 171 can be completely covered to improve encapsulation performance.

[0129] like Figure 7 As shown, the first region MOL1 of the second encapsulation layer 173 can have an area larger than the light-emitting regions LA1, LA2, and LA3. The first region MOL1 can completely cover the light-emitting regions LA1, LA2, and LA3. The first regions MOL1 can be spaced apart from each other.

[0130] The second region MOL2 may not overlap with the luminescent regions LA1, LA2, and LA3, and may be located in other regions besides the first region MOL1. For example, the first region MOL1 may be spaced apart from each other in a similar shape to the luminescent regions LA1, LA2, and LA3, and may be arranged in a dot pattern when viewed from above. The second region MOL2 may surround the first region MOL1. The grooves GRO formed in the second region MOL2 may be arranged in the same manner as the second region MOL2.

[0131] refer to Figure 8 According to another embodiment, the first region MOL1 can be positioned to cover the light-emitting regions LA1, LA2, and LA3, and can have a matrix shape when viewed from above. The second region MOL2 may not overlap with any of the light-emitting regions LA1, LA2, and LA3. When viewed from above, the second region MOL2 can be arranged in a dot pattern, and the grooves GRO formed in the second region MOL2 can be arranged in the same manner as the second region MOL2 when viewed from above.

[0132] The second region MOL2 can be spaced apart from each other and can be located between emitting regions LA1, LA2, and LA3 that emit light of different colors. For example, the second region MOL2 can be located between the first emitting region LA1 and the second emitting region LA2, between the second emitting region LA2 and the third emitting region LA3, and between the third emitting region LA3 and the first emitting region LA1. The second region MOL2 may not be located between emitting regions LA1, LA2, and LA3 that emit light of the same color. For example, the second region MOL2 may not be located between the first emitting regions LA1, between the second emitting regions LA2, or between the third emitting regions LA3. However, it should be understood that this disclosure is not limited thereto. The second region MOL2 can be located between emitting regions LA1, LA2, and LA3 that emit light of the same color.

[0133] According to this embodiment, the second region MOL2 of the second encapsulation layer 173 is located in the non-emitting region NLA, and the dam 180 of the wavelength conversion layer WCL is formed on the second region MOL2, which will be described later. In this way, color mixing of light emitted from the emitting regions LA1, LA2, and LA3 to the adjacent emitting regions LA1, LA2, and LA3 can be prevented.

[0134] like Figure 9 As shown, when most of the light emitted from the first light-emitting element ED1 exits toward the light-transmitting pattern 230 of the wavelength conversion layer WCL, some of the light may exit into adjacent light-emitting areas. By forming a second region MOL2 with a groove GRO in the second encapsulation layer 173, the dam 180 can be further extended toward the pixel defining layer 150. Since the dam 180 contains a light-blocking / absorbing material, it can prevent color mixing by blocking or absorbing light exiting into adjacent light-emitting areas. As a result, the color gamut of the display device 10 can be improved.

[0135] A third encapsulation layer 175 may be disposed on the second encapsulation layer 173. The third encapsulation layer 175 may be configured to cover both the first region MOL1 and the second region MOL2 of the second encapsulation layer 173 to prevent moisture or foreign matter from penetrating into the second encapsulation layer 173. The third encapsulation layer 175 may include inorganic materials. For example, the third encapsulation layer 175 may include at least one of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. However, it should be understood that this disclosure is not limited thereto.

[0136] It should be noted that the structure of the thin-film encapsulation layer TFEL is not limited to the examples above. The stacking structure of the thin-film encapsulation layer TFEL can be modified in various ways.

[0137] Refer again Figure 5 and Figure 6The wavelength conversion layer (WCL) can be disposed on the thin-film encapsulation layer (TFEL). The wavelength conversion layer (WCL) may include a dam 180, a light-transmitting pattern 230, a first wavelength conversion pattern 240, a second wavelength conversion pattern 250, and a capping layer 300.

[0138] A barrier 180 can be disposed on the thin-film encapsulation layer TFEL. The barrier 180 can separate the light-emitting regions LA1, LA2, and LA3 from the non-light-emitting region NLA. The barrier 180 can be disposed within the non-light-emitting region NLA and can block light transmission. More specifically, the barrier 180 can be disposed between the light-transmitting pattern 230 and the first wavelength conversion pattern 240, between the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250, and between the second wavelength conversion pattern 250 and the light-transmitting pattern 230 to prevent color mixing between adjacent light-emitting regions.

[0139] Furthermore, the dam 180 may not overlap with the first region MOL1 of the second encapsulation layer 173 of the thin-film encapsulation layer TFEL, but it may overlap with the second region MOL2. For example, the dam 180 may be disposed in the groove GRO of the second region MOL2. Therefore, it can block the transmission of light emitted from the light-emitting regions LA1, LA2, and LA3 toward adjacent light-emitting regions. In this way, color mixing between adjacent light-emitting regions can be prevented.

[0140] Dam 180 may include an organic light-blocking material and may be formed via a coating and exposure process of the organic light-blocking material or by inkjet printing. For example, Dam 180 may include an organic material and a light-blocking dye or pigment mixed in the organic material. The organic material may include acrylic resins, methacrylate-based resins, polyisoprene, vinyl resins, epoxy resins, polyurethane resins, cellulose resins, and dinaphthalene-based resins. The dye or pigment may include carbon black, etc.

[0141] The light-transmitting pattern 230 can be disposed on the thin-film encapsulation layer TFEL. The light-transmitting pattern 230 can overlap with the first light-emitting region LA1. The light-transmitting pattern 230 can transmit incident light. If the source light provided from the first light-emitting element ED1 is blue light, then the blue source light can pass through the light-transmitting pattern 230.

[0142] According to embodiments of the present disclosure, the light-transmitting pattern 230 may include a first base resin 231, and may also include a first scatterer 233 dispersed in the first base resin 231.

[0143] The first base resin 231 can be made of a material with high light transmittance. According to embodiments of the present disclosure, the first base resin 231 can be made of an organic material. For example, the first base resin 231 may include organic materials such as epoxy resin, acrylic resin, calorie resin, or imide resin.

[0144] The first scatterer 233 may have a refractive index different from that of the first base resin 231 and may form an optical interface with the first base resin 231. For example, the first scatterer 233 may be a light-scattering particle. The material of the first scatterer 233 is not particularly limited, as long as it can scatter at least a portion of the transmitted light. For example, the first scatterer 233 may be a metal oxide particle or an organic particle. Examples of metal oxides may include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), tin oxide (SnO2), etc. Examples of organic particle materials may include acrylic resin, polyurethane resin, etc. Regardless of the direction of the incident light, the first scatterer 233 may scatter light in random directions without substantially changing the wavelength of the light transmitted through the light-transmitting pattern 230.

[0145] According to embodiments of this disclosure, the light-transmitting pattern 230 can be formed by applying a photosensitive material, exposing it to light, and developing it. However, it should be understood that this disclosure is not limited thereto. The light-transmitting pattern 230, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250 can be formed by inkjet printing.

[0146] The first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 can be disposed on the thin film encapsulation layer TFEL.

[0147] The first wavelength conversion pattern 240 can be located on the thin-film encapsulation layer TFEL in the second light-emitting region LA2. The first wavelength conversion pattern 240 can convert or shift the peak wavelength of the incident light to light with another peak wavelength and emit that light. According to an embodiment of the present disclosure, the first wavelength conversion pattern 240 can convert source light provided from the second light-emitting element ED2 into red light having a peak wavelength in the range of approximately 610 nm to 650 nm and output it.

[0148] The first wavelength conversion pattern 240 may include a second base resin 241 and a first wavelength shifter 245 dispersed in the second base resin 241, and may also include a second scatterer 243 dispersed in the second base resin 241.

[0149] The second base resin 241 may be made of a material with high light transmittance. According to embodiments of the present disclosure, the second base resin 241 may be made of an organic material. The second base resin 241 may be made of the same material as the first base resin 231, or may include at least one of the materials listed above as examples of constituent materials of the first base resin 231.

[0150] The first wavelength shifter 245 can convert or shift the peak wavelength of the incident light to another peak wavelength. According to an embodiment of the present disclosure, the first wavelength shifter 245 can convert source light (e.g., light of the first color as blue light) provided from the second light-emitting element ED2 into red light having a single peak wavelength in the range of approximately 610 nm to 650 nm and output it.

[0151] Examples of the first wavelength shifter 245 may include quantum dots, quantum rods, or phosphors. For example, quantum dots may be particulate matter that emits color when electrons transition from the conduction band to the valence band.

[0152] Quantum dots can be semiconductor nanocrystal materials. Quantum dots have specific band gaps depending on their composition and size, and can absorb light and emit light with an inherent wavelength. Examples of semiconductor nanocrystals containing quantum dots can include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or combinations thereof.

[0153] Group II-VI compounds may be selected from the following groups: binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; and compounds selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnS. Ternary compounds selected from the group consisting of e, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0154] III-V group compounds may be selected from the following groups: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0155] Group IV-VI compounds can be selected from the following groups: binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. Group IV elements can be selected from the group consisting of Si, Ge, and mixtures thereof. Group IV compounds can be binary compounds selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0156] Binary, ternary, or quaternary compounds can exist in particles at a uniform concentration or at partially different concentrations within the same particle. Furthermore, they can have a core / shell structure where one quantum dot surrounds another. At the interface between the core and shell, the concentration gradient of atoms in the shell can decrease towards the center.

[0157] According to embodiments of this disclosure, quantum dots can have a core-shell structure comprising a core containing nanocrystals and a shell surrounding the core. The shell of the quantum dot can serve as a protective layer for maintaining semiconductor properties by preventing chemical denaturation of the core, and / or as a charge layer for imparting electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. Examples of shells for quantum dots can include oxides of metals or non-metals, semiconductor compounds, combinations thereof, etc.

[0158] Examples of metal or nonmetal oxides may include, but are not limited to, binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and CoMn2O4.

[0159] In addition, examples of semiconductor compounds may include, but are not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc.

[0160] The light output from the first wavelength shifter 245 can have a full width at half maximum (FWHM) of an emission wavelength spectrum of approximately 45 nm or less, approximately 40 nm or less, or approximately 30 nm or less. Therefore, the color purity and color gamut of the colors displayed by the display device 10 can be further improved. Furthermore, the light output from the first wavelength shifter 245 can travel in different directions, regardless of the incident direction of the incident light. In this way, the lateral visibility of the second color displayed in the second emitting region LA2 can be improved.

[0161] Some of the source light provided by the second light-emitting element ED2 may not be converted into red light by the first wavelength shifter 245. However, the light that is not converted into red light can be blocked by the color filter layer CFL disposed above it. On the other hand, the red light converted by the first wavelength conversion pattern 240 passes through the color filter layer CFL and is emitted to the outside.

[0162] The second scatterer 243 may have a refractive index different from that of the second base resin 241, and may form an optical interface with the second base resin 241. For example, the second scatterer 243 may be a light-scattering particle. The second scatterer 243 is substantially the same as the first scatterer 233 described above; and therefore, redundant descriptions will be omitted.

[0163] The second wavelength conversion pattern 250 can be located on the thin-film encapsulation layer TFEL in the third light-emitting region LA3. The second wavelength conversion pattern 250 can convert or shift the peak wavelength of the incident light to another peak wavelength to emit the light. According to an embodiment of the present disclosure, the second wavelength conversion pattern 250 can convert the source light provided from the third light-emitting element ED3 into green light in the range of approximately 510 nm to 550 nm and output it.

[0164] The second wavelength conversion pattern 250 may include a third base resin 251 and a second wavelength shifter 255 dispersed in the third base resin 251, and may also include a third scatterer 253 dispersed in the third base resin 251.

[0165] The third base resin 251 may be made of a material with high light transmittance. According to embodiments of the present disclosure, the third base resin 251 may be made of an organic material. The third base resin 251 may be made of the same material as the first base resin 231, or may include at least one of the materials listed above as examples of constituent materials of the first base resin 231.

[0166] The second wavelength shifter 255 can convert or shift the peak wavelength of the incident light to another peak wavelength. According to an embodiment of the present disclosure, the second wavelength shifter 255 can convert source light (e.g., blue light) having a peak wavelength in the range of 440 nm to 480 nm into green light having a peak wavelength in the range of 510 nm to 550 nm.

[0167] Examples of the second wavelength shifter 255 may include quantum dots, quantum rods, or phosphors. The second wavelength shifter 255 is substantially the same as the first wavelength shifter 245; and therefore, redundant descriptions will be omitted. According to embodiments of this disclosure, both the first wavelength shifter 245 and the second wavelength shifter 255 may be composed entirely of quantum dots. In this case, the particle size of the quantum dots forming the first wavelength shifter 245 may be larger than the particle size of the quantum dots forming the second wavelength shifter 255.

[0168] The third scatterer 253 may have a refractive index different from that of the third base resin 251, and may form an optical interface with the third base resin 251. For example, the third scatterer 253 may be a light-scattering particle. The third scatterer 253 is essentially the same as the second scatterer 243 described above; and therefore, redundant descriptions will be omitted.

[0169] The source light output from the third light-emitting element ED3 can be provided to the second wavelength conversion pattern 250. The second wavelength shifter 255 can convert the source light provided from the third light-emitting element ED3 into green light with a peak wavelength in the range of approximately 510 nm to 550 nm and output it.

[0170] Some of the source light may not be converted to green light by the second wavelength shifter 255 and may pass through the second wavelength conversion pattern 250. However, the light that is not converted to green light can be blocked by the color filter layer CFL. On the other hand, the green light converted by the second wavelength conversion pattern 250 passes through the color filter layer CFL and exits to the outside.

[0171] The capping layer 300 can be applied to the dike 180, the light-transmitting pattern 230, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250 to cover them. Therefore, impurities such as moisture and air can be prevented from penetrating from the outside and damaging or contaminating the dike 180, the light-transmitting pattern 230, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250.

[0172] The capping layer 300 can be made of inorganic materials. For example, the capping layer 300 can be made of materials including silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, silicon oxynitride, etc.

[0173] The low-refractive-index layer (LRL) can be disposed on the wavelength conversion layer (WCL). For example, the LRL can be directly disposed on the capping layer 300 of the wavelength conversion layer (WCL). The LRL can be entirely disposed on the display area DPA of the display device 10 (see [reference]). Figure 1 In the display area, for example, a low-refractive-index layer 320 can be disposed on the light-emitting regions LA1, LA2, and LA3 and the non-light-emitting region NLA. The low-refractive-index layer 320 can have a relatively lower refractive index than the light-transmitting pattern 230, the first wavelength conversion pattern 240, the second wavelength conversion pattern 250, and the capping layer 300. In the low-refractive-index layer 320, due to the difference in refractive index, light from below can be refracted towards the top, thereby improving emission efficiency.

[0174] The low refractive index (LRL) layer may include pores dispersed in a transparent resin. The resin may include one or more selected from the group consisting of acrylic acid, polysiloxane, polyurethane, polyurethane acrylate, polyimide, polymethylsilsesquioxane (PMSSQ), and poly(methyl methacrylate) (PMMA). Pores are air-containing pores that may be randomly distributed within the resin.

[0175] Furthermore, the low refractive index layer (LRL) may also include hollow particles. The hollow particles may include one or more materials selected from the group consisting of silicon dioxide (SiO2), magnesium fluoride (MgF2), and iron oxide (Fe3O4). For example, the hollow particles may include a shell made of one or more of the above materials and a hollow portion within the shell. According to embodiments, the diameter of the hollow particles may be in the range of 20 nm to 200 nm, but is not limited thereto.

[0176] The color filter layer CFL can be disposed on the low refractive index layer LRL. The color filter layer CFL may include a first color filter 350, a second color filter 360, and a third color filter 370. In addition, it may include a first color pattern 355, a second color pattern 365, and a third color pattern 375.

[0177] The first color filter 350 may overlap with the third emitting region LA3. The first color filter 350 may be configured to overlap with the third emitting element ED3 and the second wavelength conversion pattern 250. The first color pattern 355 may be spaced apart from the first color filter 350 and may overlap with the non-emitting region NLA. The first color filter 350 may be in direct contact with the low refractive index layer LRL.

[0178] The first color filter 350 and the first color pattern 355 can selectively transmit a third color of light (e.g., green light) and can block or absorb the first color of light (e.g., blue light) and the second color of light (e.g., red light). According to an embodiment, the first color filter 350 may be a green color filter and may include a green colorant, such as a green dye or green pigment. As used herein, colorants encompass both dyes and pigments.

[0179] The second color filter 360 may overlap with the second light-emitting region LA2. The second color filter 360 may overlap with the second light-emitting element ED2 and the first wavelength conversion pattern 240. According to an embodiment, one side of the second color filter 360 may be disposed in the non-light-emitting region NLA and overlap with the adjacent first color filter 350. The opposite side of the second color filter 360 may be disposed in the non-light-emitting region NLA and overlap with the first color pattern 355. The second color pattern 365 may be spaced apart from the second color filter 360 and may overlap with the non-light-emitting region NLA. The second color pattern 365 may overlap with the first color filter 350 in the non-light-emitting region NLA. The second color filter 360 may be in direct contact with the low-refractive layer LRL.

[0180] The second color filter 360 and the second color pattern 365 can selectively transmit light of a second color (e.g., red light) and can block and absorb light of a first color (e.g., blue light) and a third color (e.g., green light). For example, the second color filter 360 can be a red color filter and can include a red colorant, such as a red dye or red pigment.

[0181] The third color filter 370 may overlap with the first light-emitting region LA1. The third color filter 370 may also overlap with the first light-emitting element ED1 and the light-transmitting pattern 230. According to an embodiment, one side of the third color filter 370 may be disposed in the non-light-emitting region NLA and overlap with the adjacent second color filter 360. Furthermore, the opposite side of the third color filter 370 may be disposed in the non-light-emitting region NLA and overlap with the adjacent first color filter 350 and second color pattern 365. The third color pattern 375 may be spaced apart from the third color filter 370 and may overlap with the non-light-emitting region NLA. The third color pattern 375 may overlap with the second color filter 360 in the non-light-emitting region NLA. The third color filter 370 and the third color pattern 375 may be in direct contact with the low-refractive layer LRL.

[0182] The third color filter 370 can selectively transmit light of the first color (e.g., blue light) and can block and absorb light of the second color (e.g., red light) and the third color (e.g., green light). For example, the third color filter 370 can be a blue color filter and can include a blue colorant, such as a blue dye or blue pigment.

[0183] As described above, the first color filter 350, the second color filter 360, and the third color filter 370, as well as the first color pattern 355, the second color pattern 365, and the third color pattern 375, overlap each other in the non-emitting region NLA to block or absorb light. For example, in the non-emitting region NLA located on one side of the second emitting region LA2, the first color pattern 355, the second color filter 360, and the third color filter 370 overlap each other, and in the non-emitting region NLA located on the opposite side of the second emitting region LA2, the first color filter 350, the second color filter 360, and the third color pattern 375 may overlap each other.

[0184] An outer coating 380 may be disposed on the first color filter 350, the second color filter 360, and the third color filter 370, as well as the first color pattern 355, the second color pattern 365, and the third color pattern 375. The outer coating 380 may provide a flat surface on the color filter layer CFL, thereby allowing for more reliable attachment of the optical functional layer LFL, which will be described later.

[0185] The outer coating 380 can be made of organic materials. For example, the outer coating 380 may include acrylic resin, methacrylate resin, polyisoprene, imide resin, vinyl resin, epoxy resin, polyurethane resin, cellulose resin, naphthalene-containing benzene resin, etc.

[0186] The optical functional layer LFL can be disposed on the color filter layer CFL. For example, the optical functional layer LFL can be directly disposed on the outer coating 380 of the color filter layer CFL. The optical functional layer LFL can be an anti-reflective layer that prevents the reflection of external light. The optical functional layer LFL can be attached in the form of a film or formed by coating. However, it should be understood that this disclosure is not limited thereto. An anti-fingerprint layer, etc., can be disposed.

[0187] As described above, according to this embodiment, in the display device 10, the second region MOL2 having a groove GRO formed therein is formed in the second encapsulation layer 173 of the thin film encapsulation layer TFEL, and a dam 180 is formed in the groove GRO, thereby blocking light emitted from the light-emitting regions LA1, LA2, and LA3 to the adjacent light-emitting regions. Therefore, color mixing between the light-emitting regions LA1, LA2, and LA3 of the display device 10 can be prevented to improve the color gamut.

[0188] Other embodiments will be described below with reference to other accompanying drawings.

[0189] Figure 10 This is a schematic cross-sectional view of a display device according to another embodiment. Figure 11 It is shown schematically. Figure 10 A cross-sectional view of a portion of the first luminescent region. Figure 10 and Figure 11 The corresponding examples are shown below. Figure 5 and Figure 6 The area.

[0190] Figure 10 and Figure 11 The implementation method is basically the same as described above. Figures 5 to 9 The implementation method is the same, except that in addition to the thin film encapsulation layer TFEL, it also includes a fourth encapsulation layer 172 and a fifth encapsulation layer 177; and therefore, redundant descriptions will be omitted.

[0191] The thin-film encapsulation layer TFEL of the display device 10 according to the embodiment may include a first encapsulation layer 171, a second encapsulation layer 173, a third encapsulation layer 175, a fourth encapsulation layer 172 and a fifth encapsulation layer 177.

[0192] A first encapsulation layer 171 may be disposed on an emissive material layer EML, and a second encapsulation layer 173 may be disposed on the first encapsulation layer 171. Unlike the embodiments described above, the second encapsulation layer 173 may provide a flat upper surface above lower elements with different heights. For example, the height of the second encapsulation layer 173, measured from the substrate SUB, may be equal in the emitting regions LA1, LA2, and LA3 and the non-emitting region NLA. A third encapsulation layer 175 may be disposed on the second encapsulation layer 173. Because the second encapsulation layer 173 has a flat upper surface, the third encapsulation layer 175 may also be flat.

[0193] The first encapsulation layer 171, the second encapsulation layer 173, and the third encapsulation layer 175 may be made of the same material as in the embodiments described above; and therefore, redundant descriptions will be omitted.

[0194] The fourth encapsulation layer 172 can be disposed on the third encapsulation layer 175, and the fifth encapsulation layer 177 can be disposed on the fourth encapsulation layer 172.

[0195] The fourth encapsulation layer 172 may include a first region MOL1 and a second region MOL2.

[0196] The first region MOL1 may overlap with the light-emitting regions LA1, LA2, and LA3, and may be the thicker portion of the fourth encapsulation layer 172. In the fourth encapsulation layer 172, light emitted from the light-emitting elements ED1, ED2, and ED3 can substantially exit into the wavelength conversion layer WCL. Therefore, the first region MOL1 may be positioned to at least cover the light-emitting regions LA1, LA2, and LA3. At least a portion of the first region MOL1 may overlap with the non-light-emitting region NLA. The first region MOL1 may not overlap with the embankment 180 of the wavelength conversion layer WCL.

[0197] The second region MOL2 may not overlap with the light-emitting regions LA1, LA2, and LA3, and may be the portion of the fourth encapsulation layer 172 that is thinner than the first region MOL1. The second region MOL2 may be located between the light-emitting regions LA1, LA2, and LA3. The second region MOL2 may overlap with the non-light-emitting region NLA. According to some embodiments, the second region MOL2 may completely overlap with the non-light-emitting region NLA. The second region MOL2 may overlap with the embankment 180 of the wavelength conversion layer WCL.

[0198] In the second region MOL2, a groove (GRO) can be formed in the fourth encapsulation layer 172. The groove (GRO) can have a concave shape in the thickness direction from the surface of the fourth encapsulation layer 172. Due to the groove (GRO), the second region MOL2 can have a thickness less than that of the first region MOL1. The groove (GRO) can overlap with the second region MOL2. According to some embodiments, the groove (GRO) can completely overlap with the second region MOL2. The groove (GRO) can have a predetermined depth. The depth of the groove (GRO) can be the vertical distance from the surface of the first region MOL1 to the surface of the second region MOL2.

[0199] The first region MOL1 may have a first thickness TT1, and the second region MOL2 may have a second thickness TT2. The first thickness TT1 of the first region MOL1 may be greater than the second thickness TT2 of the second region MOL2. For example, the first thickness TT1 may be in the range of 1 μm to 5 μm, and the second thickness TT2 may be in the range of 50% to 90% of the first thickness TT1.

[0200] The layout of the first region MOL1, the second region MOL2, and the groove GRO of the fourth encapsulation layer 172 is consistent with... Figure 7 and Figure 8 The layout shown is the same; therefore, redundant descriptions will be omitted.

[0201] According to this embodiment, the second region MOL2 of the fourth encapsulation layer 172 is located in the non-emitting region NLA, and the dam 180 of the wavelength conversion layer WCL is formed on the second region MOL2. In this way, color mixing of light emitted from the emitting regions LA1, LA2, and LA3 to the adjacent emitting regions LA1, LA2, and LA3 can be prevented.

[0202] Specifically, according to this embodiment, the third encapsulation layer 175 can be disposed between the second encapsulation layer 173 and the fourth encapsulation layer 172. In the process of manufacturing the thin-film encapsulation layer TFEL, if the above-described... Figure 5 The patterning process for forming grooves (GROs) in the second encapsulation layer 173, as shown, allows for the formation of a third encapsulation layer 175 on the second encapsulation layer 173 to achieve encapsulation performance. Subsequently, a fourth encapsulation layer 172 can be additionally formed to perform the patterning process for forming grooves (GROs). Therefore, there are advantages such as ensuring the reliability of the thin-film encapsulation film TFEL and preventing color mixing.

[0203] A fifth encapsulation layer 177 may be disposed on the fourth encapsulation layer 172. The fifth encapsulation layer 177 may be configured to cover both the first region MOL1 and the second region MOL2 of the fourth encapsulation layer 172 to prevent moisture or foreign matter from penetrating into the fourth encapsulation layer 172. The fifth encapsulation layer 177 may include the same material as the first encapsulation layer 171 and the third encapsulation layer 175 described above.

[0204] Figure 12 This is a schematic cross-sectional view of a display device according to yet another embodiment. Figure 13 It is shown schematically. Figure 12 A cross-sectional view of a portion of the first luminescent region. Figure 14 This is a plan view showing the layout of the light-emitting area of ​​a display device according to another embodiment of the present disclosure. Figure 15 and Figure 16 This is a cross-sectional view showing the processing steps of a method for manufacturing a thin-film encapsulation layer in a display device according to another embodiment of the present disclosure.

[0205] Figures 12 to 14 The implementation method is the same as described above. Figures 5 to 9 The difference in the implementation is that the display device 10 also includes an encapsulation pattern TFP disposed between the second encapsulation layer 173 and the third encapsulation layer 175 of the thin film encapsulation layer TFEL.

[0206] The thin-film encapsulation layer TFEL of the display device 10 according to the embodiment may include a first encapsulation layer 171, a second encapsulation layer 173, a third encapsulation layer 175, and an encapsulation pattern TFP.

[0207] The encapsulation pattern TFP can be disposed between the second encapsulation layer 173 and the third encapsulation layer 175. The encapsulation pattern TFP can overlap with each of the light-emitting regions LA1, LA2, and LA3. In the encapsulation pattern TFP, light emitted from the light-emitting elements ED1, ED2, and ED3 can substantially exit into the wavelength conversion layer WCL. Therefore, the encapsulation pattern TFP can be disposed to at least cover each of the light-emitting regions LA1, LA2, and LA3. At least a portion of the encapsulation pattern TFP can overlap with the non-light-emitting region NLA. The encapsulation pattern TFP may not overlap with the embankment 180 of the wavelength conversion layer WCL.

[0208] like Figure 14 As shown, the encapsulation pattern TFP can have an area larger than the light-emitting regions LA1, LA2, and LA3. The encapsulation pattern TFP can completely cover each of the light-emitting regions LA1, LA2, and LA3. The encapsulation patterns TFP can be spaced apart from each other and can overlap with the first region MOL1 of the second encapsulation layer 173. For example, the encapsulation pattern TFP can completely overlap with the first region MOL1.

[0209] The package pattern TFP may contain inorganic materials. For example, the package pattern TFP may include at least one of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. However, it should be understood that this disclosure is not limited thereto.

[0210] The third encapsulation layer 175 may be disposed on the package pattern TFP and the second encapsulation layer 173. The third encapsulation layer 175 may be in direct contact with the package pattern TFP and the second encapsulation layer 173 to cover them.

[0211] According to this embodiment, the encapsulation pattern TFP can be set on the first region MOL1 of the second encapsulation layer 173, and can be used in the manufacturing process of forming a groove GRO in the second region MOL2.

[0212] refer to Figure 15 and Figure 16 A first encapsulation layer 171 and a second encapsulation layer 173 of a thin-film encapsulation layer TFEL are sequentially formed on the emitter material layer EML. Subsequently, an inorganic material layer CVL is formed on the second encapsulation layer 173. The inorganic material layer CVL can be formed using, but is not limited to, chemical vapor deposition (CVD).

[0213] Subsequently, a photoresist pattern PR is formed on the inorganic material layer CVL. The photoresist pattern PR is formed to overlap with the region of the first region MOL1 where the second encapsulation layer 173 will be formed.

[0214] Subsequently, the inorganic material layer CVL and the second encapsulation layer 173 are etched using a photoresist pattern PR as a mask. During the etching process, dry etching can be used to etch the inorganic material layer CVL and the second encapsulation layer 173 together. In this way, the inorganic material layer CVL not masked by the photoresist pattern PR can be removed by etching. By adjusting the etching process conditions to partially etch the second encapsulation layer 173, a groove (GRO) can be formed in the second encapsulation layer 173.

[0215] Subsequently, the photoresist pattern PR is removed. A second region MOL2, in which the groove GRO is formed, and a first region MOL1, excluding the second region MOL2, can be formed. Furthermore, the package pattern TFP can be formed to overlap with the first region MOL1 of the second package layer 173.

[0216] This implementation can be applied when a process for forming grooves (GROs) is performed in another facility during the fabrication of the thin-film encapsulation layer (TFEL). If the substrate (SUB) is transferred to another facility after the second encapsulation layer (173) has been formed, foreign matter or moisture may penetrate into the second encapsulation layer (173). Therefore, the second encapsulation layer (173) can be protected by covering it with an inorganic material layer (CVL), and an etching process can then be performed in that facility to form grooves (GROs) in the second encapsulation layer (173). Thus, the penetration of foreign matter or moisture into the second encapsulation layer (173) during the fabrication of the thin-film encapsulation layer (TFEL) can be prevented, and degradation of encapsulation performance is prevented.

[0217] Figure 17 This is a cross-sectional view showing a display device according to another embodiment. Figure 18 It is shown schematically. Figure 17 A cross-sectional view of a portion of the first luminescent region. Figure 19 This is a plan view showing the layout of the light-emitting area of ​​a display device according to another embodiment of the present disclosure.

[0218] Figures 17 to 19 The implementation method is the same as described above. Figures 5 to 9 The difference in the implementation is that an etch stop layer ESL is also provided between the first encapsulation layer 171 and the second encapsulation layer 173 of the thin film encapsulation layer TFEL, and the second encapsulation layer 173 includes an opening OP.

[0219] The thin-film encapsulation layer TFEL of the display device 10 according to the embodiment may include a first encapsulation layer 171, an etch stop layer ESL, a second encapsulation layer 173 and a third encapsulation layer 175.

[0220] An etch stop layer (ESL) can be disposed between the first encapsulation layer 171 and the second encapsulation layer 173. The ESL can also be disposed directly on the first encapsulation layer 171. The ESL prevents the underlying layers from being damaged during the etching process of the opening (OP) of the second encapsulation layer 173, as will be described later. The ESL can also be disposed entirely on the surface of the display area (DPA).

[0221] The etch stop layer (ESL) can be positioned across the light-emitting regions LA1, LA2, and LA3, and therefore can have high transmittance. For example, for light with a wavelength of 550 nm, the etch stop layer (ESL) can have a transmittance of approximately 95% or higher.

[0222] The etch stop layer (ESL) may comprise an inorganic material. For example, the ESL may comprise at least one of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. Furthermore, the ESL may comprise a metal oxide. For example, the ESL may comprise one or more of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), and indium oxide (In₂O₃). However, it should be understood that this disclosure is not limited thereto.

[0223] The second encapsulation layer 173 may be disposed on the etch stop layer ESL. The second encapsulation layer 173 may overlap with each of the light-emitting regions LA1, LA2, and LA3. In the second encapsulation layer 173, light emitted from the light-emitting elements ED1, ED2, and ED3 can substantially exit to the wavelength conversion layer WCL. Therefore, the second encapsulation layer 173 may be configured to at least cover each of the light-emitting regions LA1, LA2, and LA3. At least a portion of the second encapsulation layer 173 may overlap with the non-light-emitting region NLA. The second encapsulation layer 173 may at least partially overlap with the embankment 180 of the wavelength conversion layer WCL.

[0224] The opening OP may not overlap with any of the light-emitting regions LA1, LA2, and LA3. The opening OP may be located between the light-emitting regions LA1, LA2, and LA3. The opening OP may be positioned to overlap with the non-light-emitting region NLA. According to some embodiments, the opening OP may completely overlap with the non-light-emitting region NLA. The opening OP may overlap with the dam 180 of the wavelength conversion layer WCL.

[0225] The opening OP exposes the upper surface of the underlying etch stop layer ESL. In the non-light-emitting region NLA, the third encapsulation layer 175 can directly contact the upper surface of the etch stop layer ESL through the opening OP. The second encapsulation layer 173 can be disposed between the first encapsulation layer 171 and the third encapsulation layer 175 and can be completely covered by them.

[0226] The opening OP can be filled with a dam 180. Since the second encapsulation layer 173 is not disposed in the opening OP, the dam 180 can be disposed close to the pixel defining layer 150. In other words, the dam 180 can extend further towards the bottom. Therefore, it can further block light emitted between adjacent light-emitting areas LA1, LA2, and LA3 to prevent color mixing.

[0227] refer to Figure 19 The second encapsulation layer 173 can be patterned. For example, the second encapsulation layers 173 can be spaced apart from each other and can be arranged in a dot pattern. The second encapsulation layer 173 can have an area larger than each of the light-emitting regions LA1, LA2, and LA3. The second encapsulation layer 173 can completely cover each of the light-emitting regions LA1, LA2, and LA3. The opening OP can not overlap with any of the light-emitting regions LA1, LA2, and LA3 and can be located in an area other than the second encapsulation layer 173. For example, the opening OP can surround the second encapsulation layer 173.

[0228] The aforementioned opening OP can be formed via an ashing process after the formation of the second encapsulation layer 173. The ashing process can be performed using O2 or F as the reactive gas. For example, the ashing process can be performed using O2 reactive gas alone, F reactive gas alone, or O2 reactive gas followed by a subsequent F reactive gas ashing process. The ashing process using O2 reactive gas allows for anisotropic etching, and the ashing process using F reactive gas can quickly remove the second encapsulation layer 173, which can save process time.

[0229] According to this embodiment, by forming an etch stop layer ESL in the thin film encapsulation layer TFEL, it is possible to prevent the underlying layer from being damaged when etching the opening OP of the second encapsulation layer 173.

[0230] Figure 20 This is a cross-sectional view showing a display device according to another embodiment. Figure 21 It is shown schematically. Figure 20 A cross-sectional view of a portion of the first luminescent region.

[0231] according to Figure 20 and Figure 21 The implementation method is basically the same as described above. Figure 10 and Figure 11The implementation is the same, except that the thin-film encapsulation layer TFEL in the display device 10 includes an etch stop layer ESL instead of a third encapsulation layer 175 and the fourth encapsulation layer 172 includes an opening OP; and therefore, redundant descriptions will be omitted.

[0232] The thin-film encapsulation layer TFEL of the display device 10 according to the embodiment may include a first encapsulation layer 171, a second encapsulation layer 173, an etch stop layer ESL, a fourth encapsulation layer 172, and a fifth encapsulation layer 177.

[0233] A first encapsulation layer 171 may be disposed on an emissive material layer (EML), and a second encapsulation layer 173 may be disposed on the first encapsulation layer 171. The second encapsulation layer 173 may provide a flat upper surface above lower components with different heights.

[0234] An etch stop layer (ESL) can be disposed on the second encapsulation layer 173. Since the second encapsulation layer 173 has a flat upper surface, the etch stop layer ESL can be flat. The etch stop layer ESL prevents the underlying layers from being damaged during the etching process of the opening (OP) of the fourth encapsulation layer 172. The etch stop layer ESL can be disposed entirely on the surface of the display area DPA. Descriptions of other features of the etch stop layer ESL will be omitted to avoid redundancy.

[0235] The fourth encapsulation layer 172 can be disposed on the etch stop layer ESL, and the fifth encapsulation layer 177 can be disposed on the fourth encapsulation layer 172.

[0236] The fourth encapsulation layer 172 may overlap with each of the light-emitting regions LA1, LA2, and LA3. In the fourth encapsulation layer 172, light emitted from the light-emitting elements ED1, ED2, and ED3 can substantially exit into the wavelength conversion layer WCL. Therefore, the fourth encapsulation layer 172 may be configured to at least cover each of the light-emitting regions LA1, LA2, and LA3. At least a portion of the fourth encapsulation layer 172 may overlap with the non-light-emitting region NLA. The fourth encapsulation layer 172 may at least partially overlap with the embankment 180 of the wavelength conversion layer WCL.

[0237] The opening OP may not overlap with any of the light-emitting regions LA1, LA2, and LA3. The opening OP may be located between the light-emitting regions LA1, LA2, and LA3. The opening OP may be positioned to overlap with the non-light-emitting region NLA. According to some embodiments, the opening OP may completely overlap with the non-light-emitting region NLA. The opening OP may be aligned with the dam 180 of the wavelength conversion layer WCL.

[0238] The opening OP exposes the upper surface of the underlying etch stop layer ESL. The fifth packaging layer 177, disposed on the fourth packaging layer 172, can directly contact the upper surface of the etch stop layer ESL through the opening OP. The fourth packaging layer 172 can be disposed between the etch stop layer ESL and the fifth packaging layer 177, and can be completely covered by them.

[0239] The aforementioned opening OP can be formed via an ashing process after the fourth encapsulation layer 172 is formed. When viewed from the top, the layout of the fourth encapsulation layer 172 and the opening OP is as described above. Figures 17 to 19 The second encapsulation layer 173 and the opening OP have the same layout; therefore, redundant descriptions will be omitted.

[0240] According to this embodiment, by forming an etch stop layer ESL in the thin film encapsulation layer TFEL, it is possible to prevent the underlying layer from being damaged when etching the opening OP of the fourth encapsulation layer 172.

[0241] Figure 22 This is a schematic cross-sectional view of a display device according to yet another embodiment. Figure 23 It is shown schematically. Figure 22 A cross-sectional view of a portion of the first luminescent region. Figure 24 This is a plan view showing the layout of the light-emitting area of ​​a display device according to another embodiment of the present disclosure.

[0242] Figures 22 to 24 The implementation method is the same as described above. Figures 5 to 9 The difference in the implementation is that the thin-film encapsulation layer TFEL in the display device 10 includes a plurality of openings OP and an organic layer 179 is disposed in the openings OP. The following description will focus on the differences and redundant descriptions will be omitted.

[0243] The thin-film encapsulation layer TFEL of the display device 10 according to the embodiment may include a first encapsulation layer 171, a second encapsulation layer 173, a third encapsulation layer 175, and an organic layer 179.

[0244] A second encapsulation layer 173 may be disposed on the first encapsulation layer 171. The second encapsulation layer 173 may overlap with each of the light-emitting regions LA1, LA2, and LA3. In the second encapsulation layer 173, light emitted from the light-emitting elements ED1, ED2, and ED3 can substantially exit into the wavelength conversion layer WCL. Therefore, the second encapsulation layer 173 may be configured to at least cover each of the light-emitting regions LA1, LA2, and LA3. At least a portion of the second encapsulation layer 173 may overlap with the non-light-emitting region NLA. The second encapsulation layer 173 may at least partially overlap with the embankment 180 of the wavelength conversion layer WCL.

[0245] The opening OP may not overlap with any of the light-emitting regions LA1, LA2, and LA3. The opening OP may be located between the light-emitting regions LA1, LA2, and LA3. The opening OP may be positioned to overlap with the non-light-emitting region NLA. According to some embodiments, the opening OP may completely overlap with the non-light-emitting region NLA. The opening OP may overlap with the dam 180 of the wavelength conversion layer WCL.

[0246] The opening OP exposes the upper surface of the first encapsulation layer 171 beneath it. The third encapsulation layer 175, disposed on the second encapsulation layer 173, can directly contact the upper surface of the first encapsulation layer 171 through the opening OP. The second encapsulation layer 173 can be disposed between the first encapsulation layer 171 and the third encapsulation layer 175 and can be completely covered by them.

[0247] The organic layer 179 can be disposed in the opening OP. The organic layer 179 can be disposed directly on the first encapsulation layer 171 or disposed between the first encapsulation layer 171 and the third encapsulation layer 175. The organic layer 179 can be completely covered by the first encapsulation layer 171 and the third encapsulation layer 175 to prevent moisture from penetrating into the organic layer 179.

[0248] Organic layer 179 may not overlap with any of the light-emitting regions LA1, LA2, and LA3. Organic layer 179 may be disposed between the light-emitting regions LA1, LA2, and LA3. Organic layer 179 may overlap with the non-light-emitting region NLA. According to some embodiments, organic layer 179 may completely overlap with the non-light-emitting region NLA. Furthermore, organic layer 179 may overlap with the dam 180 of the wavelength conversion layer WCL.

[0249] The organic layer 179 may have a third thickness TT3. The second encapsulation layer 173 may have a first thickness TT1, and the third thickness TT3 of the organic layer 179 may be less than the first thickness TT1. For example, the third thickness TT3 of the organic layer 179 may be in the range of 50% to 90% of the first thickness TT1.

[0250] like Figure 24 As shown, the opening OP may not overlap with each of the light-emitting regions LA1, LA2, and LA3, and may surround each of the light-emitting regions LA1, LA2, and LA3. The organic layer 179 may have an area smaller than that of the opening OP, may not overlap with any of the light-emitting regions LA1, LA2, and LA3, and may surround each of the light-emitting regions LA1, LA2, and LA3. For example, the second encapsulation layer 173 may be arranged in a dot pattern similar to the shape of the light-emitting regions LA1, LA2, and LA3, and the organic layer 179 may surround the second encapsulation layer 173.

[0251] The opening OP can be filled with a dam 180 covering the organic layer 179. Since the second encapsulation layer 173 is not disposed in the opening OP, the dam 180 can be disposed close to the pixel defining layer 150. In other words, the dam 180 can extend further towards the bottom. Therefore, light emitted between adjacent light-emitting regions LA1, LA2, and LA3 can be further blocked to prevent color mixing.

[0252] Table 1 below shows the emission efficiencies and color gamuts of red, green, blue, and white based on whether the second encapsulation layer has grooves in the thin-film encapsulation layer. The emission efficiencies and color gamuts in Table 1 are simulation results. The structure forming the grooves in the second encapsulation layer is... Figure 5 and Figure 6 The structure is the same, and the depth of the groove is 1.5μm.

[0253] [Table 1]

[0254] Referring to Table 1 above, comparing the structure in which a groove is formed in the second encapsulation layer with the structure in which a groove is not formed in the second encapsulation layer, the color gamut is increased from 98.15% to 99.01%. Therefore, it can be seen from the above that the display device according to this embodiment can increase the color gamut by forming a groove in the second encapsulation layer and providing a dam on the groove.

[0255] Although embodiments of the invention have been described above with reference to the accompanying drawings, those skilled in the art will understand that the invention can be implemented in other specific forms without altering its technical spirit or essential characteristics. Therefore, the above embodiments should be understood in all respects as illustrative rather than restrictive.

Claims

1. A display device, comprising: Substrate; A first electrode is disposed on the substrate; A pixel defining layer covers the edge of the first electrode and defines a light-emitting area and a non-light-emitting area; A light-emitting layer is disposed on the first electrode and the pixel defining layer; The second electrode is disposed on the light-emitting layer; A thin-film encapsulation layer is disposed on the second electrode and includes a first encapsulation layer, a second encapsulation layer disposed on the first encapsulation layer, and a third encapsulation layer disposed on the second encapsulation layer. as well as A wavelength conversion layer is disposed on the thin-film encapsulation layer and includes a dam overlapping the non-light-emitting region. The second encapsulation layer includes a first region overlapping the light-emitting region and a second region not overlapping the light-emitting region. The thickness of the first region is greater than the thickness of the second region.

2. The display device according to claim 1, wherein, The first region overlaps with the non-luminescent region, and the second region overlaps with the non-luminescent region.

3. The display device according to claim 1, wherein, The first zone does not overlap with the dike, while the second zone overlaps with the dike.

4. The display device according to claim 1, wherein, The thickness of the second region is in the range of 50% to 90% of the thickness of the first region.

5. The display device according to claim 1, wherein, The second encapsulation layer includes a groove formed in the surface of the second encapsulation layer, and the groove is located in the second region.

6. The display device according to claim 1, wherein, The first region covers the luminescent area in the plan view and is spaced apart from each other, and the second region is located in other regions outside the first region.

7. The display device according to claim 1, wherein, The second zone is spaced apart from each other and positioned between the light-emitting zones that emit different colors of light.

8. The display device according to claim 1, further comprising: An encapsulation pattern is disposed between the second encapsulation layer and the third encapsulation layer. The encapsulation pattern overlaps with the first area but not with the second area.

9. The display device according to claim 8, wherein, The encapsulation pattern overlaps with the light-emitting area but not with the embankment.

10. The display device according to claim 1, further comprising: A fourth encapsulation layer is disposed between the first encapsulation layer and the second encapsulation layer; as well as The fifth encapsulation layer is disposed between the fourth encapsulation layer and the second encapsulation layer. The first, third, and fifth encapsulation layers contain inorganic materials, while the second and fourth encapsulation layers contain organic materials.

11. The display device according to claim 1, wherein, The first and third encapsulation layers contain inorganic materials, and the second encapsulation layer contains organic materials.

12. The display device according to claim 1, wherein, The wavelength conversion layer includes a light-transmitting pattern, a first wavelength conversion pattern, and a second wavelength conversion pattern disposed in the space defined by the embankment and overlapping the light-emitting area, respectively.

13. The display device according to claim 12, further comprising: A low-refractive-index layer is disposed on the wavelength conversion layer; as well as A color filter layer is disposed on the low-refractive layer and includes a first color filter that overlaps with the light-transmitting pattern, a second color filter that overlaps with the first wavelength conversion pattern, and a third color filter that overlaps with the second wavelength conversion pattern.

14. A display device, comprising: Substrate; A first electrode is disposed on the substrate; A pixel defining layer covers the edge of the first electrode and defines a light-emitting area and a non-light-emitting area; A light-emitting layer is disposed on the first electrode and the pixel defining layer; The second electrode is disposed on the light-emitting layer; A thin-film encapsulation layer is disposed on the second electrode and includes a first encapsulation layer, an etch stop layer disposed on the first encapsulation layer, a second encapsulation layer disposed on the etch stop layer, and a third encapsulation layer disposed on the second encapsulation layer; as well as A wavelength conversion layer is disposed on the thin-film encapsulation layer and includes a dam overlapping the non-light-emitting region. The third encapsulation layer is in contact with the etch stop layer in the non-light-emitting area.

15. The display device according to claim 14, wherein, The second encapsulation layer includes an opening that exposes the etch stop layer, and the third encapsulation layer contacts the etch stop layer through the opening.

16. The display device according to claim 15, wherein, The opening overlaps with the non-luminous area and the embankment.

17. The display device according to claim 14, wherein, The second encapsulation layer is disposed between the etch stop layer and the third encapsulation layer, and is covered by the etch stop layer and the third encapsulation layer.

18. The display device according to claim 14, further comprising: A fourth encapsulation layer is disposed between the first encapsulation layer and the etch stop layer. The second and fourth encapsulation layers contain organic materials.

19. A display device, comprising: Substrate; A first electrode is disposed on the substrate; A pixel defining layer covers the edge of the first electrode and defines a light-emitting area and a non-light-emitting area; A light-emitting layer is disposed on the first electrode and the pixel defining layer; The second electrode is disposed on the light-emitting layer; A thin-film encapsulation layer is disposed on the second electrode and includes a first encapsulation layer, a second encapsulation layer and an organic layer disposed on the first encapsulation layer and spaced apart from each other, and a third encapsulation layer disposed on the second encapsulation layer and the organic layer; as well as A wavelength conversion layer is disposed on the thin-film encapsulation layer and includes a dam overlapping the non-light-emitting region. The third encapsulation layer is in contact with the first encapsulation layer in the non-light-emitting area.

20. The display device according to claim 19, wherein, The second encapsulation layer overlaps with the non-light-emitting area and the embankment and includes an opening exposing the first encapsulation layer. The organic layer is disposed in the opening and is in contact with the first encapsulation layer.

21. The display device according to claim 20, wherein, The third encapsulation layer covers the second encapsulation layer and the organic layer, and contacts the first encapsulation layer through the opening.

22. The display device according to claim 20, wherein, The opening is filled with the dike on the third encapsulation layer.

23. The display device according to claim 19, wherein, The thickness of the organic layer is less than the thickness of the second encapsulation layer.

24. The display device according to claim 19, wherein, The first and third encapsulation layers contain inorganic materials, and the second encapsulation layer contains organic materials.

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