Semiconductor substrate and method of manufacturing the same

Abstract

The application provides a semiconductor substrate and a manufacturing method thereof, the semiconductor substrate comprising: a composite plate comprising at least two metal layers based on a compression connection; the at least two metal layers comprising one molybdenum layer and at least one copper layer; an insulating medium layer covering the metal layers of the composite plate; a wiring layer partially covering the insulating medium layer; a protective layer covering at least part of the wiring layer; the one molybdenum layer and the at least one copper layer of the composite plate are connected through the compression connection, plastic deformation occurs at the layer interface of the molybdenum layer and the at least one copper layer to form mechanical interlocking, so that there is no macroscopic gap at the layer interface of the molybdenum layer and the at least one copper layer and the bonding strength is high; the composite plate can realize the performance complementation of copper and molybdenum, and has both strength and plasticity. Meanwhile, the composite plate formed by copper and molybdenum has higher thermal conductivity and strength than aluminum, and can meet the heat dissipation demand of a modular intelligent power system.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically, to a semiconductor substrate and a method for manufacturing the same. Background Technology

[0002] Modular Intelligent Power Systems (MIPS) include power switching devices, drive circuits, and fault detection circuits integrated on a single semiconductor substrate. MIPS generate significant heat during operation, placing high demands on the heat dissipation of the semiconductor substrate.

[0003] Existing semiconductor substrates typically use aluminum as the metal substrate. However, existing semiconductor substrates are prone to warping and cannot be tightly bonded to external heat sinks, thus failing to meet the heat dissipation requirements of modular intelligent power systems. Summary of the Invention

[0004] This application addresses the shortcomings of existing methods by proposing a semiconductor substrate and its manufacturing method to solve the technical problem that semiconductor substrates are prone to warping and cannot be tightly bonded to external heat sinks, thus failing to meet the heat dissipation requirements of modular intelligent power systems.

[0005] In a first aspect, embodiments of this application provide a semiconductor substrate, comprising: A composite board comprising at least two metal layers based on a pressure bonding connection; the at least two metal layers comprising a molybdenum layer and at least one copper layer; An insulating dielectric layer covers the metal layer of the composite plate; The wiring layer partially covers the insulating dielectric layer; A protective layer covers at least a portion of the wiring layer.

[0006] In some embodiments, the composite board includes a molybdenum layer and a copper layer; the insulating dielectric layer covers the surface of the molybdenum layer.

[0007] In some embodiments, the composite board includes two copper layers and one molybdenum layer, with the molybdenum layer sandwiched between the two copper layers; the insulating dielectric layer covers the surface of the copper layer.

[0008] Secondly, embodiments of this application provide a method for manufacturing a semiconductor substrate, comprising: At least two metal layers are laminated together to obtain a composite board; the at least two metal layers include a molybdenum layer and at least a copper layer. A semi-cured insulating dielectric layer is formed to cover the metal layer of the composite plate; A conductive material layer is formed covering the semi-cured insulating dielectric layer; The composite board, the conductive material layer, and the semi-cured insulating dielectric layer are pressed together and subjected to high temperature treatment until the semi-cured insulating dielectric layer is cured. The conductive material layer is patterned to form a wiring layer; A protective layer is formed, which covers at least a portion of the wiring layer.

[0009] In some embodiments, the step of laminating at least two metal layers to obtain a composite board includes: A pressure within a preset target range is applied to one layer of the molybdenum layer and at least one layer of the copper layer, and the pressure is maintained for a preset time until the molybdenum layer and the copper layer are connected at the layer interface to form the composite plate.

[0010] In some embodiments, the preset target range is determined based on the total thickness of the molybdenum layer and at least one copper layer in the metal layer.

[0011] In some embodiments, applying a pressure within a predetermined target range to the stacked molybdenum layer and at least one copper layer includes: A first target pressure is applied to one layer of the molybdenum and at least one layer of the copper, and gradually or progressively increased to a second target pressure.

[0012] In some embodiments, the at least two metal layers comprise a molybdenum layer and a copper layer. After laminating the at least two metal layers to obtain the composite board, and before forming a semi-cured insulating dielectric layer covering the metal layers of the composite board, the method further includes: The surface of the molybdenum layer of the composite plate is cleaned and roughened.

[0013] In some embodiments, the at least two metal layers include a molybdenum layer and a copper layer, and the semi-cured insulating dielectric layer forming the metal layers covering the composite plate includes: A liquid insulating dielectric layer is formed covering the surface of the molybdenum layer of the composite board through a coating process; a semi-cured insulating dielectric layer is formed covering the surface of the molybdenum layer of the composite board through a drying process, or... A semi-cured insulating dielectric layer is formed on the surface of the molybdenum layer covering the composite board through a printing or lamination process.

[0014] In some embodiments, the at least two metal layers include a molybdenum layer and two copper layers, and the step of laminating the at least two metal layers to obtain a composite board includes: One layer of molybdenum is stacked between two layers of copper. The pressure is applied to the stacked molybdenum layer and the two copper layers and held for a preset time until the molybdenum layer is connected to the two copper layers at the layer interface to form the composite plate.

[0015] In some embodiments, the semi-cured insulating dielectric layer forming the metal layer covering the composite plate includes: A liquid insulating dielectric layer is formed on the surface of the copper layer of the composite board through a coating process; a semi-cured insulating dielectric layer is formed on the surface of the copper layer of the composite board through a drying process, or... A semi-cured insulating dielectric layer is formed on the surface of the copper layer covering the composite board through printing or lamination processes.

[0016] The beneficial technical effects of the technical solutions provided in this application include: In this embodiment, a molybdenum layer and at least one copper layer of the composite plate are joined by lamination. Plastic deformation occurs at the interface between the molybdenum layer and the at least one copper layer, forming a mechanical bond. This results in no macroscopic voids at the interface and high bonding strength. The composite plate achieves complementary properties between copper and molybdenum, possessing both strength and ductility. Furthermore, the copper-molybdenum composite plate has higher thermal conductivity and strength than aluminum, is less prone to heat accumulation and warping, and can meet the heat dissipation requirements of modular intelligent power systems.

[0017] The insulating dielectric layer, located between the composite board and the wiring layer, prevents current flow between them, thus avoiding short circuits or leakage within the wiring layer and ensuring the safety and stability of the circuit system. The protective layer covers part of the wiring layer and exposes the areas to be connected, preventing soldering in areas of the wiring layer that do not require it. It also increases the withstand voltage between lines in the wiring layer, preventing high-voltage breakdown and improving overall reliability. Furthermore, the protective layer prevents short circuits or performance degradation in the wiring layer caused by oxidation or contamination. Simultaneously, the exposed areas to be connected facilitate subsequent soldering or connection of external components, ensuring the accuracy and stability of electrical connections.

[0018] Furthermore, when integrating devices on a semiconductor substrate, high-temperature processing is required during semiconductor packaging. Since the molybdenum layer has a low coefficient of thermal expansion, it can reduce the thermal stress of the composite board at high temperatures, thereby reducing the risk of delamination between the composite board and the insulating dielectric layer, and thus improving the reliability of the semiconductor.

[0019] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0020] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein: Figure 1 A schematic flowchart illustrating a method for manufacturing a semiconductor substrate according to an embodiment of this application; Figure 2 In the first semiconductor substrate manufacturing method provided in the embodiments of this application, a molybdenum layer and a copper layer are laminated to obtain a composite plate structure diagram; Figure 3 A schematic diagram of a structure in which an insulating dielectric layer and a conductive material layer are sequentially covered on a molybdenum layer in a first semiconductor substrate manufacturing method provided in this application embodiment; Figure 4 A schematic diagram of the structure after forming a wiring layer, a protective layer, and a device layer in the first semiconductor substrate manufacturing method provided in the embodiments of this application; Figure 5 In the second semiconductor substrate manufacturing method provided in this application embodiment, a molybdenum layer is sandwiched between two copper layers and laminated to obtain a composite plate. Figure 6 A schematic diagram of a structure in which an insulating dielectric layer and a conductive material layer are sequentially covered on a copper layer in a second semiconductor substrate manufacturing method provided in this application embodiment; Figure 7 This is a schematic diagram of the structure after forming a wiring layer, a protective layer, and a device layer in a second semiconductor substrate manufacturing method provided in this application embodiment.

[0021] Figure label: 1-Composite board; 11-Copper layer; 12-Molybdenum layer; 2-Insulating dielectric layer; 3-Conductive material layer; 4-Wiring layer; 5-Protective layer; 6-Device layer. Detailed Implementation

[0022] The embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the embodiments described below with reference to the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions of the embodiments of this application.

[0023] Those skilled in the art will understand that, unless specifically stated otherwise, the terms "described" and "the" as used herein may also include plural forms. It should be further understood that the term "comprising" as used in the specification of this application means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude other features, information, data, steps, operations, elements, components, and / or combinations thereof supported by the art. The term "and / or" as used herein refers to at least one of the items defined by the term; for example, "A and / or B" can be implemented as "A," or as "B," or as "A and B."

[0024] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0025] Modular Intelligent Power Systems (MIPS) include power switching devices, drive circuits, and fault detection circuits integrated on a single semiconductor substrate. MIPS generate significant heat during operation, placing high demands on the heat dissipation of the semiconductor substrate.

[0026] Existing semiconductor substrates typically use aluminum as the metal substrate. However, aluminum is prone to warping during the manufacturing process of semiconductor substrates, which prevents them from fitting tightly to external heat sinks, thus failing to meet the heat dissipation requirements of modular intelligent power systems.

[0027] The technical solution of this application and how it solves the above-mentioned technical problems are described in detail below with specific embodiments. It should be noted that the following embodiments can be referenced, borrowed, or combined with each other, and the same terms, similar features, and similar implementation steps in different embodiments will not be described again.

[0028] This application provides a semiconductor substrate, such as... Figure 4 and Figure 7 As shown, the semiconductor substrate includes: a composite plate 1, an insulating dielectric layer 2, a wiring layer 4, and a protective layer 5.

[0029] The composite plate 1 includes at least two metal layers based on a pressure bonding; the at least two metal layers include a molybdenum layer 12 and at least a copper layer 11.

[0030] Insulating dielectric layer 2 covers the metal layer of composite board 1.

[0031] Wiring layer 4 partially covers insulating dielectric layer 2.

[0032] A protective layer 5 covers at least a portion of the wiring layer 4.

[0033] The semiconductor substrate provided in this application embodiment has a molybdenum layer 12 and at least one copper layer 11 bonded together by lamination. Plastic deformation occurs at the interface between the molybdenum layer 12 and the at least one copper layer 11, forming a mechanical bond. This results in no macroscopic voids at the interface and high bonding strength. The composite board 1 achieves complementary properties between copper and molybdenum, possessing both strength and ductility. Furthermore, the copper-molybdenum composite board 1 has higher thermal conductivity and strength than aluminum, is less prone to heat accumulation and warping, and can meet the heat dissipation requirements of modular intelligent power systems.

[0034] The insulating dielectric layer 2 is located between the composite board 1 and the wiring layer 4, preventing current flow between them and thus avoiding short circuits or leakage within the wiring layer 4, ensuring the safety and stability of the circuit system. The protective layer 5 covers part of the wiring layer 4 and exposes the areas to be connected, preventing soldering in areas of the wiring layer 4 that do not require soldering. It also increases the withstand voltage between the lines in the wiring layer 4, preventing high-voltage breakdown and improving overall reliability. Furthermore, the protective layer 5 prevents short circuits or performance degradation in the wiring layer 4 caused by oxidation or contamination. Simultaneously, the exposed areas to be connected facilitate subsequent soldering or connection of external components, ensuring the accuracy and stability of the electrical connections.

[0035] Furthermore, when integrating devices on a semiconductor substrate, high-temperature processing is required during semiconductor packaging. Since the molybdenum layer 12 has a low coefficient of thermal expansion, it can reduce the thermal stress of the composite plate 1 at high temperatures, thereby reducing the risk of delamination between the composite plate 1 and the insulating dielectric layer 2, and thus improving the reliability of the semiconductor.

[0036] It should be noted that, in the embodiments of this application, when the term "insulating dielectric layer 2" is not preceded by a qualifier, it refers to the fully cured insulating dielectric layer 2.

[0037] Alternatively, in one possible implementation of this application, such as Figure 4 As shown, the composite board 1 includes a molybdenum layer 12 and a copper layer 11; the insulating dielectric layer 2 covers the surface of the molybdenum layer 12.

[0038] In this embodiment, a molybdenum layer 12 and a copper layer 11 are stacked, and the molybdenum layer 12 and the copper layer 11 are connected at the layer interface. Since copper has good corrosion resistance, the copper layer 11, as the outermost layer of the semiconductor substrate, can effectively prevent corrosion of the semiconductor substrate caused by environmental factors during use and extend its service life. Molybdenum has good thermal conductivity per unit volume, which can quickly conduct heat away from the heat source and improve heat dissipation efficiency. Moreover, molybdenum has a high melting point and a low coefficient of thermal expansion. After the molybdenum layer 12 and the copper layer 11 are combined, they can effectively suppress material deformation at high temperatures and enhance the structural stability of the semiconductor substrate. This composite structure, while meeting the high thermal conductivity requirements, reduces interfacial thermal stress and prevents cracks or delamination between the composite plate 1 and the insulating dielectric layer 2 due to thermal mismatch. This improves the reliability and durability of the semiconductor substrate in high-temperature operating environments and meets the stringent requirements of modular intelligent power systems for heat dissipation and mechanical strength. By adjusting the thickness ratio of the copper layer 11 to the molybdenum layer 12, the synergistic matching of thermal conductivity and thermal expansion coefficient is further optimized, ensuring that the semiconductor substrate maintains structural integrity during repeated thermal cycling and effectively supports the long-term stable operation of the device.

[0039] In this embodiment, the insulating dielectric layer 2 covers the surface of the molybdenum layer 12 of the composite board 1 and forms a good bond with it, effectively isolating external moisture and impurities and improving the environmental adaptability of the semiconductor substrate; moreover, the insulating dielectric layer 2 is located between the wiring layer 4 and the composite board 1, which can play the role of electrical isolation, preventing short circuits between the wiring layer 4 and the composite board 1 or leakage of the wiring layer 4, and ensuring the safety and stability of device operation.

[0040] Alternatively, in one possible implementation of this application, such as Figure 7 As shown, the composite board 1 includes two copper layers 11 and one molybdenum layer 12, with the molybdenum layer 12 sandwiched between the two copper layers 11; the insulating dielectric layer 2 covers the surface of the copper layer 11.

[0041] In this embodiment, a molybdenum layer 12 is sandwiched between two copper layers 11. The molybdenum layer 12 and the two copper layers 11 are connected at the layer interface. Since copper has good corrosion resistance, the copper layer 11, as the outermost layer of the semiconductor substrate, can effectively prevent corrosion caused by environmental factors during use and extend its service life. At the same time, the symmetrical copper layer 11 structure helps to reduce the risk of warping caused by uneven thermal stress distribution. Molybdenum has good thermal conductivity per unit volume, which can quickly conduct heat away from the heat source and improve heat dissipation efficiency. Moreover, molybdenum has a high melting point and a low coefficient of thermal expansion. The combination of the molybdenum layer 12 and the copper layer 11 can effectively suppress material deformation at high temperatures and enhance the structural stability of the semiconductor substrate. This composite structure, while meeting the high thermal conductivity requirements, reduces interfacial thermal stress and prevents cracks or delamination between the composite plate 1 and the insulating dielectric layer 2 due to thermal mismatch. This improves the reliability and durability of the semiconductor substrate in high-temperature operating environments and meets the stringent requirements of modular intelligent power systems for heat dissipation and mechanical strength. By adjusting the thickness ratio of the copper layer 11 to the molybdenum layer 12, the synergistic matching of thermal conductivity and thermal expansion coefficient is further optimized, ensuring that the semiconductor substrate maintains structural integrity during repeated thermal cycling and effectively supports the long-term stable operation of the device.

[0042] In this embodiment, the insulating dielectric layer 2 covers the surface of either of the two copper layers 11 of the composite board 1. Since the two copper layers 11 of the composite board 1 are made of the same material as the conductive material layer 3, the conductive material layer 3, the semi-cured insulating dielectric layer 2 and the composite board 1 have the same pressing process parameters on both sides during the pressing process, thereby improving production efficiency.

[0043] Based on the same inventive concept, embodiments of this application provide a method for manufacturing a semiconductor substrate, such as... Figure 1 As shown, the manufacturing method includes the following steps: S101: Press at least two metal layers together to obtain composite plate 1; the at least two metal layers include a molybdenum layer and at least a copper layer.

[0044] S102: Semi-cured insulating dielectric layer 2 that forms the metal layer covering the composite plate 1.

[0045] S103: A conductive material layer 3 is formed to cover the semi-cured insulating dielectric layer 2.

[0046] S104: Press the composite board 1, the conductive material layer 3 and the semi-cured insulating dielectric layer 2 together and treat them at high temperature until the semi-cured insulating dielectric layer 2 is cured.

[0047] S105: Pattern the conductive material layer 3 to form the wiring layer 4.

[0048] S106: Form a protective layer 5, which covers at least a portion of the wiring layer 4.

[0049] In this embodiment, a molybdenum layer 12 and at least one copper layer 11 are pressed together, causing plastic deformation at the interface between the molybdenum layer 12 and the copper layer 11 to form a mechanical bond. This results in a composite plate 1 with no macroscopic voids at the interface between the molybdenum layer 12 and the copper layer 11 and high bonding strength. This composite plate 1 achieves complementary properties of copper and molybdenum, possessing both strength and plasticity. Moreover, the copper-molybdenum composite plate 1 has higher thermal conductivity and strength than aluminum, is less prone to heat accumulation and warping, and can meet the heat dissipation requirements of modular intelligent power systems. A semi-cured insulating dielectric layer 2 is covered on the surface of the metal layer of the composite plate 1, and a conductive material layer is covered on the surface of the semi-cured insulating dielectric layer 2. After high-temperature treatment and pressing, the insulating dielectric layer 2 is completely cured, and the composite plate 1, the insulating dielectric layer 2, and the conductive material layer 3 are tightly bonded to form a stable structure. The conductive material layer 3 is patterned to form a wiring layer 4, and a protective layer 5 is coated on the surface of the wiring layer 4 to cover part of the wiring layer 4 and expose the area to be connected, thus obtaining a semiconductor substrate.

[0050] Furthermore, when integrating devices on a semiconductor substrate, high-temperature processing is required during semiconductor packaging. Since the molybdenum layer has a low coefficient of thermal expansion, it can reduce the thermal stress of the composite plate 1 at high temperatures, thereby reducing the risk of delamination between the composite plate 1 and the insulating dielectric layer 2, and thus improving the reliability of the semiconductor.

[0051] Optionally, in an optional embodiment of this application, step S101, which involves laminating at least two metal layers to obtain composite plate 1, includes: A pressure within a predetermined target range is applied to a stacked molybdenum layer 12 and at least one copper layer 11, and the pressure is maintained for a predetermined time until the molybdenum layer 12 and the copper layer 11 connect at the layer interface to form a composite plate 1, as shown. Figure 2 and Figure 5 As shown.

[0052] In this embodiment, when at least two metal layers include a molybdenum layer 12 and a copper layer 11, the molybdenum layer 12 and the copper layer 11 are stacked vertically; when at least two metal layers include a molybdenum layer 12 and two copper layers 11, a molybdenum layer 12 is sandwiched between the two copper layers 11. A preset target pressure is applied to the stacked molybdenum layer 12 and at least one copper layer 11 and held for a preset time, causing plastic deformation at the layer interface and forming a mechanical interlock, thereby achieving a tight connection. The preset time must be controlled within the target time range to ensure interlayer bonding strength while avoiding excessive deformation. This pressing process is performed at room temperature, without additional heating, which helps reduce process costs and minimizes material performance degradation caused by heat. In this embodiment, the target time range includes 10-60 minutes.

[0053] It should be noted that when at least two metal layers include a molybdenum layer 12 and a copper layer 11, the preset holding time can be the same as or different from the preset holding time when at least two metal layers include a molybdenum layer 12 and two copper layers 11. The specific preset holding time is designed according to actual needs.

[0054] Optionally, in an optional embodiment of this application, a preset target range is determined based on the total thickness of the molybdenum layer 12 and at least one copper layer 11 in the metal layer.

[0055] In this embodiment, a preset target range of pressure is determined based on the total thickness of a molybdenum layer 12 and at least one copper layer 11, so that the molybdenum layer 12 and the copper layer 11 undergo plastic deformation at the layer interface and form mechanical interlocking, thereby achieving a tight connection.

[0056] Optionally, in an optional embodiment of this application, applying a pressure within a predetermined target range to the stacked molybdenum layer 12 and at least one copper layer 11 includes: A first target pressure is applied to a stacked molybdenum layer 12 and at least one copper layer 11, and then gradually or progressively increased to a second target pressure.

[0057] In some embodiments, when applying pressure to the stacked molybdenum layer 12 and at least one copper layer 11, the pressure is gradually increased from a first target pressure to a second target pressure, so that the molybdenum layer 12 and the copper layer 11 gradually undergo plastic deformation at the interface, avoiding warping or cracking of the board due to instantaneous high pressure, and ensuring uniform and reliable interlayer bonding.

[0058] In some embodiments, when applying pressure to the stacked molybdenum layer 12 and at least one copper layer 11, a step-by-step pressure increase is adopted, gradually increasing from a first target pressure to a second target pressure to ensure uniform interlayer contact and promote interfacial plastic deformation. This process can effectively eliminate interfacial gaps, improve the density of the bonding surface, and thus enhance the overall mechanical properties and thermal conductivity of the composite plate 1. The pressure increment is controlled within a reasonable range to avoid localized cracking or warping of the material due to sudden high pressure. It should be noted that the first target pressure is less than the second target pressure.

[0059] With reference to the accompanying drawings, the manufacturing method of the first semiconductor substrate according to the present application is described in detail below.

[0060] like Figure 2 As shown, a molybdenum layer 12 is stacked on the surface of a copper layer 11. The preset target range of pressure is determined according to the total thickness of the molybdenum layer 12 and the copper layer 11. Pressure within the preset target range is applied to the molybdenum layer 12 and the copper layer 11 and the pressure is held for a preset time, so that the molybdenum layer 12 and the copper layer 11 undergo plastic deformation at the layer interface and form mechanical interlocking, thereby obtaining the composite plate 1.

[0061] Optionally, in one possible embodiment of this application, the at least two metal layers include a molybdenum layer 12 and a copper layer 11; after step S101, which involves pressing the at least two metal layers together to obtain the composite plate 1, and before step S102, which involves forming the semi-cured insulating dielectric layer 2 covering the metal layers of the composite plate 1, the method further includes: The surface of the molybdenum layer 12 of the composite plate 1 is cleaned and roughened.

[0062] In this embodiment, the surface of the molybdenum layer 12 of the composite board 1 is cleaned and roughened to improve the interfacial bonding force between the molybdenum layer 12 and the insulating dielectric layer 2, and to effectively prevent delamination.

[0063] Optionally, in an optional embodiment of this application, at least two metal layers include a molybdenum layer 12 and a copper layer 11; step S102 above, forming a semi-cured insulating dielectric layer 2 covering the metal layers of the composite plate 1, includes: A liquid insulating dielectric layer 2 is formed on the surface of the molybdenum layer 12 covering the composite board 1 through a coating process; a semi-cured insulating dielectric layer 2 is formed on the surface of the molybdenum layer 12 covering the composite board 1 through a drying process, or... A semi-cured insulating dielectric layer 2 is formed on the surface of the molybdenum layer 12 covering the composite board 1 through printing or lamination processes, such as... Figure 3 As shown.

[0064] like Figure 3 As shown, a pre-treated liquid insulating dielectric layer 2 is uniformly coated onto the surface of the molybdenum layer 12 using an adhesive coating device. The thickness of the insulating dielectric layer 2 is controlled by adjusting the parameters of the adhesive coating device. The coated composite board 1 is then dried, allowing the insulating dielectric layer 2 on the surface of the molybdenum layer 12 to enter a semi-cured state, maintaining its adhesiveness without being fully cured, facilitating subsequent lamination. In this embodiment, the material of the insulating dielectric layer 2 includes insulating adhesive, etc. Next, a conductive material layer 3 is placed on top of the semi-cured insulating dielectric layer 2, and a lamination process and high-temperature treatment are used to tightly bond the conductive material layer 3 to the semi-cured insulating dielectric layer 2, while simultaneously allowing the insulating dielectric layer 2 to fully cure. In this embodiment, the material of the conductive material layer 3 includes copper foil, etc.

[0065] In some embodiments, a printing process, such as screen printing, is used to uniformly print the liquid insulating dielectric layer 2 onto the surface of the molybdenum layer 12. Through pre-curing treatment, such as heat curing, the insulating dielectric layer 2 on the surface of the molybdenum layer 12 enters a semi-cured state, which maintains its viscosity but is not completely cured, making it convenient for subsequent pressing.

[0066] In some embodiments, a semi-cured insulating dielectric layer 2 is uniformly coated onto the surface of the molybdenum layer 12 of the composite board 1 using a lamination process. It should be noted that the semi-cured insulating dielectric layer 2 can be manufactured using any of the above-mentioned coating, printing, or lamination processes, and the appropriate process can be selected based on specific circumstances during actual manufacturing.

[0067] like Figure 4 As shown, the desired circuitry is formed on the conductive material layer 3 using a patterning process, such as etching, to obtain the wiring layer 4. Subsequently, a protective layer 5 is formed to cover a portion of the wiring layer 4, exposing the areas to be connected, thus obtaining a semiconductor substrate. A device layer 6 is integrated on the protective layer 5, and each device in the device layer 6 is connected to the corresponding exposed areas to be connected in the wiring layer 4, forming power switching devices, drive circuits, and fault detection circuits in a modular intelligent power system; the device layer 6 includes integrated chips and discrete components in the power switching devices, drive circuits, and fault detection circuits of MIPS.

[0068] With reference to the accompanying drawings, the second method for manufacturing a semiconductor substrate according to the embodiments of this application will be described in detail below.

[0069] Optionally, in one possible embodiment of this application, the at least two metal layers include a molybdenum layer 12 and two copper layers 11; step S101 above, which involves laminating the at least two metal layers to obtain the composite plate 1, includes: A molybdenum layer 12 is stacked between two copper layers 11.

[0070] Pressure is applied to a single molybdenum layer 12 and two copper layers 11, and the pressure is maintained for a preset time until the molybdenum layer 12 is bonded to both copper layers 11 at the layer interfaces, forming a composite plate 1. Figure 5 As shown.

[0071] like Figure 5 As shown, after stacking a copper layer 11, a molybdenum layer 12, and another copper layer 11, a preset target pressure range is determined based on the total thickness of the molybdenum layer 12 and the two copper layers 11. Pressure within the preset target range is applied to the molybdenum layer 12 and the two copper layers 11 and held for a preset time, causing plastic deformation and mechanical interlocking at the layer interfaces, thus achieving a tight connection between the molybdenum layer 12 and the two copper layers 11. The preset time must be controlled within the target time range to ensure interlayer bonding strength while avoiding excessive deformation. This pressing process is carried out at room temperature without additional heating, which helps reduce process costs and minimizes material property degradation caused by heat.

[0072] In some embodiments, when applying pressure to the stacked two copper layers 11 and one molybdenum layer 12, a step-by-step pressure increase is adopted, gradually increasing from a first target pressure to a second target pressure to ensure uniform interlayer contact and promote interfacial plastic deformation. This process can effectively eliminate interfacial gaps, improve the density of the bonding surface, and thus enhance the overall mechanical properties and thermal conductivity of the composite plate 1. The pressure increment is controlled within a reasonable range to avoid localized cracking or warping of the material due to sudden high pressure. In the embodiments of this application, the preset target pressure range includes 300~800MPa (megapascals), and the target duration range includes 10~60 minutes, with specific parameters adjusted according to the total thickness of the composite plate 1.

[0073] In some embodiments, when applying pressure to the stacked molybdenum layer 12 and two copper layers 11, the pressure is gradually increased from a first target pressure to a second target pressure. This allows the molybdenum layer 12 and the two copper layers 11 to undergo gradual plastic deformation at the interface, preventing warping or cracking of the board due to instantaneous high pressure and ensuring uniform and reliable interlayer bonding. The first target pressure includes 100 MPa.

[0074] Optionally, in an optional embodiment of this application, step S102, forming a semi-cured insulating dielectric layer 2 covering the metal layer of the composite plate 1, includes: A liquid insulating dielectric layer 2 is formed on the surface of a copper layer 11 covering the composite board 1 through a coating process; a semi-cured insulating dielectric layer 2 is formed on the surface of a copper layer 11 covering the composite board 1 through a drying process, or... A semi-cured insulating dielectric layer 2 is formed on the surface of a copper layer 11 covering the composite board 1 through printing or lamination processes, such as... Figure 6 As shown.

[0075] like Figure 6 As shown, a pre-treated liquid insulating dielectric layer 2 is uniformly coated onto the surface of either of the two copper layers 11 of the composite board 1 using an adhesive coating device. The thickness of the insulating dielectric layer 2 is controlled by adjusting the parameters of the adhesive coating device. The coated composite board 1 is then dried, allowing the insulating dielectric layer 2 to enter a semi-cured state, maintaining its adhesiveness without being fully cured, facilitating subsequent lamination. In this embodiment, the material of the insulating dielectric layer 2 includes insulating adhesive, etc. Next, a conductive material layer 3 is placed on top of the semi-cured insulating dielectric layer 2, and a lamination process and high-temperature treatment are used to tightly bond the conductive material layer 3 to the semi-cured insulating dielectric layer 2, while simultaneously allowing the insulating dielectric layer 2 to fully cure. In this embodiment, the material of the conductive material layer 3 includes copper foil, etc. Since the conductive material layers 3 on both sides of the semi-solid insulating dielectric layer 2 are made of the same material as the molybdenum layer 12 or the third metal layer 13, the lamination process parameters on both sides of the insulating dielectric layer 2 are the same, thereby improving production efficiency.

[0076] In some embodiments, a printing process, such as screen printing, is used to uniformly print the liquid insulating dielectric layer 2 onto the surface of either of the two copper layers 11 of the composite board 1. Through pre-curing treatment, such as heat curing, the insulating dielectric layer 2 on the surface of one copper layer 11 enters a semi-cured state, which maintains its viscosity but is not completely cured, making it convenient for subsequent pressing.

[0077] In some embodiments, a semi-cured insulating dielectric layer 2 is uniformly coated onto the surface of either of the two copper layers 11 of the composite board 1 using a lamination process. It should be noted that the semi-cured insulating dielectric layer 2 can be manufactured using any of the above-mentioned coating, printing, or lamination processes, and the appropriate process can be selected based on the specific circumstances during actual manufacturing.

[0078] like Figure 7 As shown, the desired circuitry is formed on the conductive material layer 3 using a patterning process, such as etching, to obtain the wiring layer 4. Subsequently, a protective layer 5 is formed to cover a portion of the wiring layer 4, exposing the areas to be connected, thus obtaining a semiconductor substrate. A device layer 6 is integrated on the protective layer 5, and each device in the device layer 6 is connected to the corresponding exposed areas to be connected in the wiring layer 4, forming power switching devices, drive circuits, and fault detection circuits in a modular intelligent power system; the device layer 6 includes integrated chips and discrete components in the power switching devices, drive circuits, and fault detection circuits of MIPS.

[0079] By applying the embodiments of this application, at least the following beneficial effects can be achieved: 1. In this embodiment, a molybdenum layer 12 and at least one copper layer 11 of the composite plate 1 are joined by pressing. Plastic deformation occurs at the interface between the molybdenum layer 12 and the at least one copper layer 11 to form a mechanical bond, resulting in no macroscopic voids and high bonding strength at the interface between the molybdenum layer 12 and the at least one copper layer 11. This composite plate 1 can achieve complementary properties of copper and molybdenum, possessing both strength and plasticity. Moreover, the composite plate 1 formed by copper and molybdenum has higher thermal conductivity and strength than aluminum, is less prone to heat accumulation and warping, and can meet the heat dissipation requirements of modular intelligent power systems.

[0080] The insulating dielectric layer 2 is located between the composite board 1 and the wiring layer 4, preventing current flow between them and thus avoiding short circuits or leakage within the wiring layer 4, ensuring the safety and stability of the circuit system. The protective layer 5 covers part of the wiring layer 4 and exposes the areas to be connected, preventing soldering in areas of the wiring layer 4 that do not require soldering. It also increases the withstand voltage between the lines in the wiring layer 4, preventing high-voltage breakdown and improving overall reliability. Furthermore, the protective layer 5 prevents short circuits or performance degradation in the wiring layer 4 caused by oxidation or contamination. Simultaneously, the exposed areas to be connected facilitate subsequent soldering or connection of external components, ensuring the accuracy and stability of the electrical connections.

[0081] Furthermore, when integrating devices on a semiconductor substrate, high-temperature processing is required during semiconductor packaging. Since the molybdenum layer 12 has a low coefficient of thermal expansion, it can reduce the thermal stress of the composite plate 1 at high temperatures, thereby reducing the risk of delamination between the composite plate 1 and the insulating dielectric layer 2, and thus improving the reliability of the semiconductor.

[0082] Those skilled in the art will understand that the steps, measures, and solutions in the various operations, methods, and processes discussed in this application can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and solutions in the various operations, methods, and processes discussed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and solutions in related technologies that are similar to those disclosed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted.

[0083] In the description of this application, the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate directions or positional relationships based on the exemplary directions or positional relationships shown in the accompanying drawings. They are used to facilitate the description or simplification of the embodiments of this application and are not intended to indicate or imply that the device or component referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0084] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0085] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0086] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0087] The above description is only a partial implementation of this application. It should be noted that for those skilled in the art, other similar implementation methods based on the technical concept of this application, without departing from the technical concept of this application, also fall within the protection scope of the embodiments of this application.

Claims

1. A semiconductor substrate, characterized in that, include: A composite board comprising at least two metal layers based on a pressure bonding connection; the at least two metal layers comprising a molybdenum layer and at least one copper layer; An insulating dielectric layer covers the metal layer of the composite plate; The wiring layer partially covers the insulating dielectric layer; A protective layer covers at least a portion of the wiring layer.

2. The semiconductor substrate according to claim 1, characterized in that, The composite board includes a molybdenum layer and a copper layer; the insulating dielectric layer covers the surface of the molybdenum layer.

3. The semiconductor substrate according to claim 1, characterized in that, The composite board includes two copper layers and one molybdenum layer, with the molybdenum layer sandwiched between the two copper layers; the insulating dielectric layer covers the surface of the copper layer.

4. A method for manufacturing a semiconductor substrate, characterized in that, include: At least two metal layers are laminated together to obtain a composite board; the at least two metal layers include a molybdenum layer and at least a copper layer. A semi-cured insulating dielectric layer is formed to cover the metal layer of the composite plate; A conductive material layer is formed covering the semi-cured insulating dielectric layer; The composite board, the conductive material layer, and the semi-cured insulating dielectric layer are pressed together and subjected to high temperature treatment until the semi-cured insulating dielectric layer is cured. The conductive material layer is patterned to form a wiring layer; A protective layer is formed, which covers at least a portion of the wiring layer.

5. The manufacturing method according to claim 4, characterized in that, The process of laminating at least two metal layers to obtain a composite board includes: A pressure within a preset target range is applied to one layer of the molybdenum layer and at least one layer of the copper layer, and the pressure is maintained for a preset time until the molybdenum layer and the copper layer are connected at the layer interface to form the composite plate.

6. The manufacturing method according to claim 5, characterized in that, The preset target range is determined based on the total thickness of the molybdenum layer and at least one copper layer in the metal layer.

7. The manufacturing method according to claim 5, characterized in that, Applying a pressure within a predetermined target range to one stacked molybdenum layer and at least one stacked copper layer includes: A first target pressure is applied to one layer of the molybdenum and at least one layer of the copper, and gradually or progressively increased to a second target pressure.

8. The manufacturing method according to claim 4, characterized in that, The at least two metal layers include a molybdenum layer and a copper layer. After laminating the at least two metal layers to obtain the composite board, and before forming the semi-cured insulating dielectric layer covering the metal layers of the composite board, the process further includes: The surface of the molybdenum layer of the composite plate is cleaned and roughened.

9. The manufacturing method according to claim 4, characterized in that, The at least two metal layers include a molybdenum layer and a copper layer, and the semi-cured insulating dielectric layer forming the metal layers covering the composite plate includes: A liquid insulating dielectric layer is formed covering the surface of the molybdenum layer of the composite board through a coating process; a semi-cured insulating dielectric layer is formed covering the surface of the molybdenum layer of the composite board through a drying process, or... A semi-cured insulating dielectric layer is formed on the surface of the molybdenum layer covering the composite board through a printing or lamination process.

10. The manufacturing method according to claim 5, characterized in that, The at least two metal layers comprise one molybdenum layer and two copper layers, and the process of laminating the at least two metal layers to obtain a composite board includes: One layer of molybdenum is stacked between two layers of copper. The pressure is applied to the stacked molybdenum layer and the two copper layers and held for a preset time until the molybdenum layer is connected to the two copper layers at the layer interface to form the composite plate.

11. The manufacturing method according to claim 10, characterized in that, The semi-cured insulating dielectric layer forming the metal layer covering the composite plate includes: A liquid insulating dielectric layer is formed on the surface of the copper layer of the composite board through a coating process; a semi-cured insulating dielectric layer is formed on the surface of the copper layer of the composite board through a drying process, or... A semi-cured insulating dielectric layer is formed on the surface of the copper layer covering the composite board through printing or lamination processes.

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