An optical encryption device and a regulation method based on three-dimensional field excitation regulation in a two-dimensional material

Abstract

The application relates to the technical field of two-dimensional material exciton regulation, in particular to an optical encryption device based on three-dimensional field exciton regulation of two-dimensional materials and a regulation method. The device comprises a two-dimensional material optical device, which comprises a semiconductor substrate, a ferroelectric material substrate and a II-type heterojunction structure formed by two-dimensional materials; a bias electrode; and a laser assembly arranged on the side of the II-type heterojunction structure away from the semiconductor substrate and spaced apart from the two-dimensional material optical device; a longitudinal bias assembly electrically connected to the bias electrode and the semiconductor substrate and providing longitudinal bias for the II-type heterojunction structure; and a transverse electric field assembly comprising a transverse field electrode arranged on the side of the two-dimensional material optical device and spaced apart from the two-dimensional material optical device and providing external transverse electric field for the II-type heterojunction structure. The optical encryption device can realize regulation of excitons in three dimensions, increase the exciton regulation dimension, and thus improve the encryption complexity and the adjustable degree.

Description

Technical Field

[0001] This application relates to the field of exciton modulation technology in two-dimensional materials. Specifically, it relates to a spectroscopic chip for bias-modulated interlayer excitons on a ferroelectric substrate. Background Technology

[0002] While one-dimensional vertical grating field manipulation technology can achieve basic exciton control, it is relatively singular in terms of information control. Because it relies solely on a single grating field for control, the amount of information is limited, making it unsuitable for the future development trends of large-capacity, integrated, and miniaturized complex optical encryption systems. Furthermore, single-field manipulation is highly susceptible to interference from external environmental factors such as temperature changes, humidity, and fluctuations in the external electric field. These factors can affect carrier concentration and exciton behavior in the material, leading to instability and limitations in the optical response system.

[0003] Therefore, a solution is needed to address the problem that the current technology lacks sufficient exciton control dimensions and complexity, resulting in insufficient encryption complexity and low adjustability. Summary of the Invention

[0004] Therefore, this application provides an optical encryption device and control method based on three-dimensional field exciton control in two-dimensional materials, in order to solve the problems of insufficient exciton control dimension and low complexity in the prior art, resulting in insufficient encryption complexity and low adjustability.

[0005] In one aspect of this application, an optical encryption device based on three-dimensional field exciton modulation in a two-dimensional material is provided, comprising: a two-dimensional material optical device, including: a semiconductor substrate; a ferroelectric material substrate; the ferroelectric material substrate being disposed on one surface of the semiconductor substrate; a type II heterojunction structure; the type II heterojunction structure being disposed on the surface of the ferroelectric material substrate facing away from the semiconductor substrate, wherein at least partially p-type doped layers and n-type doped layers in the type II heterojunction structure are disposed in the same layer; the type II heterojunction structure is a structure composed of two-dimensional materials; and a bias electrode; the bias electrode being disposed on the surface of the ferroelectric material substrate facing away from the semiconductor substrate, located at... The device comprises: a laser component disposed on the side of the type II heterojunction structure, and at least partially in contact with the p-type doped layer and the n-type doped layer in the type II heterojunction structure; a longitudinal bias component electrically connected to the bias electrode and the semiconductor substrate to provide longitudinal bias for the type II heterojunction structure; and a lateral electric field component including a lateral field electrode disposed on the side of the two-dimensional material optical device and spaced apart from the two-dimensional material optical device to provide an external lateral electric field for the type II heterojunction structure.

[0006] The optical encryption device based on three-dimensional field exciton manipulation in two-dimensional materials provided in this application, by setting up a laser component that applies laser light to the two-dimensional material optical device, a longitudinal bias component that applies longitudinal bias voltage, and a transverse electric field component that applies transverse electric field, allows for the manipulation of the state of charge carriers in the type II heterojunction of the two-dimensional material optical device by controlling the laser power, the longitudinal bias voltage, and the transverse electric field. This coordinates the control of the exciton states excited by laser energy, thereby achieving information encryption through the distribution of excitons in different states. This three-dimensional manipulation of excitons increases the exciton manipulation dimension, thus improving the encryption complexity and adjustability.

[0007] In some embodiments of this application, the ferroelectric material substrate is made of lead zirconate titanate; the semiconductor substrate is a p-type doped Si substrate, or an n-type doped Si substrate.

[0008] In some embodiments of this application, the type II heterojunction structure exhibits a type II bandgap structure, which can form spatially separated electrons and holes to achieve stable interlayer exciton states.

[0009] In some embodiments of this application, the material of the type II heterojunction structure includes MoS2 / WSe2, MoSe2 / WS2, MoSe2 / WSe2, or WS2 / WSe2.

[0010] In some embodiments of this application, in the type II heterojunction structure, the n-type doped layer includes a first sub-layer of n-type doped layer and a second sub-layer of n-type doped layer disposed in different layers; the second sub-layer of n-type doped layer contacts and covers portions of the p-type doped layer and the first sub-layer of n-type doped layer, is located on the surface of the contact portion between the p-type doped layer and the first sub-layer of n-type doped layer on the side facing away from the ferroelectric material substrate, and forms an integral structure with the first sub-layer of n-type doped layer.

[0011] In some embodiments of this application, the bias electrode is a ring electrode, a planar strip electrode, or a cross electrode; among the bias electrodes, the bias electrode located on the p-type doped layer side is suitable for grounding, and the bias electrode located on the n-type doped layer side is suitable for connecting the source and drain voltage; or, among the bias electrodes, the bias electrode located on the p-type doped layer side is suitable for connecting the source and drain voltage, and the bias electrode located on the n-type doped layer side is suitable for grounding.

[0012] In some embodiments of this application, the lateral field electrode is a plurality of electrodes arranged symmetrically and at intervals, uniformly distributed on the side of the type II heterojunction; or, the lateral field electrode is a ring electrode.

[0013] In another aspect of this application, an exciton control method for an optical encryption device is also provided, using the optical encryption device based on three-dimensional field exciton control in a two-dimensional material provided in this application; the method includes the following steps: emitting a laser to a type II heterojunction using a laser component; providing a longitudinal bias voltage to the type II heterojunction structure by biasing the electrode and the semiconductor substrate using a longitudinal bias component; providing an external transverse electric field to the type II heterojunction structure using a transverse electric field component through a transverse field electrode disposed on the side of the two-dimensional material optical device; and synergistically controlling the distribution of charged and neutral excitons in the type II heterojunction by the power of the laser emitted by the laser component, the magnitude of the bias voltage provided by the longitudinal bias component, and the external transverse electric field provided by the transverse electric field component, thereby providing encryption information through the energy distribution of the centroid of the photoluminescence spectrum.

[0014] The optical encryption device based on three-dimensional field exciton manipulation in two-dimensional materials provided in this application, by setting up a laser component that applies laser light to the two-dimensional material optical device, a longitudinal bias component that applies longitudinal bias voltage, and a transverse electric field component that applies transverse electric field, allows for the manipulation of the state of charge carriers in the type II heterojunction of the two-dimensional material optical device by controlling the laser power, the longitudinal bias voltage, and the transverse electric field. This coordinates the control of the exciton states excited by laser energy, thereby achieving information encryption through the distribution of excitons in different states. This three-dimensional manipulation of excitons increases the exciton manipulation dimension, thus improving the encryption complexity and adjustability.

[0015] In some embodiments of this application, the power of the laser emitted by the laser component controls the amount and concentration of excitons generated; the longitudinal bias voltage and the transverse electric field jointly control the proportion of different states of excitons; wherein, the longitudinal bias voltage affects the injection density and distribution of charge carriers in the type II heterojunction structure; the transverse electric field affects the distribution position of charge carriers in the horizontal direction in the type II heterojunction structure, and regulates the interaction between excitons and charge carriers.

[0016] In some embodiments of this application, the control method further includes: defining three logical states according to the proportion of different exciton states, one of which is a cryptographic state used for information encryption during transmission and information decoding during reception; the other two states are information transmission states used to encode information by controlling the brightness or darkness of certain nodes in the array. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the exciton control method of an optical encryption device according to an embodiment of this application;

[0019] Figure 2 This is a graph showing the relationship between laser power and exciton peak position in an exciton modulation method of an optical encryption device according to an embodiment of this application; Figure 3 This is a schematic diagram illustrating the coordinated modulation of the centroid energy of the photoluminescence spectrum by laser power and transverse electric field in an exciton modulation method of an optical encryption device according to an embodiment of this application. Figure 4 This is a schematic diagram illustrating the coordinated modulation of the centroid energy of the photoluminescence spectrum by laser power and longitudinal bias in an exciton modulation method of an optical encryption device according to an embodiment of this application. Figure 5 The energy distribution diagram of the photoluminescence spectral centroid of a low-energy material in a type II heterojunction is shown in the exciton modulation method of an optical encryption device according to an embodiment of this application, in which laser power, longitudinal bias voltage, and transverse electric field are synergistically modulated. Detailed Implementation

[0020] As mentioned above, existing technologies suffer from insufficient exciton manipulation dimensions and low complexity, resulting in inadequate encryption and limited adjustability. Therefore, this application provides an optical encryption device and method based on three-dimensional field exciton manipulation in two-dimensional materials to address these issues.

[0021] This application provides an optical encryption device based on three-dimensional field exciton modulation in a two-dimensional material, characterized by comprising: a two-dimensional material optical device, including: a semiconductor substrate; a ferroelectric material substrate; the ferroelectric material substrate being disposed on one surface of the semiconductor substrate; a type II heterojunction structure; the type II heterojunction structure being disposed on the surface of the ferroelectric material substrate facing away from the semiconductor substrate, wherein at least partially p-type doped layers and n-type doped layers in the type II heterojunction structure are disposed in the same layer; the type II heterojunction structure is a structure composed of two-dimensional materials; a bias electrode; the bias electrode being disposed on the surface of the ferroelectric material substrate facing away from the semiconductor substrate, located at I The structure includes: a side portion of a type I heterojunction structure, and at least partially contacts the p-type doped layer and the n-type doped layer in a type II heterojunction structure; and further includes: a laser component disposed on the side of the type II heterojunction structure facing away from the semiconductor substrate, spaced apart from the two-dimensional material optical device; a longitudinal bias component electrically connected to a bias electrode and the semiconductor substrate, providing a longitudinal bias for the type II heterojunction structure; and a lateral electric field component including a lateral field electrode disposed on the side portion of the two-dimensional material optical device, spaced apart from the two-dimensional material optical device, providing an external lateral electric field for the type II heterojunction structure.

[0022] This application also provides an exciton control method for an optical encryption device, using the optical encryption device based on three-dimensional field exciton control in a two-dimensional material provided in this application; using a laser component to emit a laser to a type II heterojunction; using a longitudinal bias component to bias the electrode and semiconductor substrate to provide a longitudinal bias for the type II heterojunction structure; using a transverse electric field component to provide an external transverse electric field for the type II heterojunction structure through a transverse field electrode disposed on the side of the two-dimensional material optical device; and using the power of the laser emitted by the laser component, the magnitude of the bias provided by the longitudinal bias component, and the external transverse electric field provided by the transverse electric field component to synergistically control the distribution of charged and neutral excitons in the type II heterojunction, and providing encryption information through the energy distribution of the centroid of the photoluminescence spectrum.

[0023] The technical solutions of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In the description of this application, it should be noted that the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0024] Example 1 This embodiment provides an optical encryption device based on three-dimensional field exciton manipulation in two-dimensional materials, reference... Figure 1 ,include: Two-dimensional material optical devices, including: Semiconductor substrate 100; Ferroelectric material substrate 200; Ferroelectric material substrate 200 is disposed on one side surface of semiconductor substrate; Type II heterojunction structure 300; Type II heterojunction structure 300 is disposed on the surface of ferroelectric material substrate 200 facing away from semiconductor substrate 100, and the p-type doped layer and n-type doped layer in Type II heterojunction structure 300 are at least partially disposed in the same layer; Type II heterojunction structure is a structure made of two-dimensional materials; Bias electrode 400; The bias electrode 400 is disposed on the surface of the ferroelectric material substrate 200 on the side away from the semiconductor substrate 100, located on the side of the type II heterojunction structure 300, and at least partially contacts the p-type doped layer and at least partially contacts the n-type doped layer in the type II heterojunction structure. Also includes: The laser component L is disposed on the side of the type II heterojunction structure 300 facing away from the semiconductor substrate 100, and is spaced apart from the two-dimensional material optical device. The longitudinal bias component E1 is electrically connected to the bias electrode 400 and the semiconductor substrate 100, providing longitudinal bias for the type II heterojunction structure 300. The transverse electric field component E2 includes a transverse field electrode (the unlabeled structure on the side of the bias electrode 400 in the figure). The transverse field electrode is disposed on the side of the two-dimensional material optical device and is spaced apart from the two-dimensional material optical device to provide an external transverse electric field for the type II heterojunction structure 300.

[0025] This embodiment provides an optical encryption device based on three-dimensional field exciton manipulation in two-dimensional materials. By setting up a laser component L to apply laser light to the two-dimensional material optical device, a longitudinal bias component E1 to apply longitudinal bias voltage, and a transverse electric field component E2 to apply transverse electric field, the state of charge carriers in the type II heterojunction of the two-dimensional material optical device can be controlled by controlling the laser power, the longitudinal bias voltage, and the transverse electric field. This coordinates the control of the exciton state excited by laser energy, thereby achieving information encryption through the distribution of excitons in different states. This achieves exciton manipulation in three dimensions, increasing the exciton manipulation dimension and improving the encryption complexity and adjustability. Furthermore, the optical encryption device based on three-dimensional field exciton manipulation in two-dimensional materials provided in this embodiment uses a combination of transverse and longitudinal electric fields to precisely adjust the carrier injection, concentration distribution, and exciton state (charged or neutral state) and ratio in the two-dimensional material. This provides higher precision and dimensionality for exciton manipulation and optical encryption. Traditional electric field modulation methods (typically one-dimensional gate voltage modulation) are easily affected by the external environment, especially in complex optical systems. One-dimensional electric field modulation can change due to factors such as temperature, humidity, or voltage fluctuations, leading to unsatisfactory modulation effects. Based on the optical encryption device provided in this embodiment, laser power, transverse bias, and longitudinal voltage can be coupled to improve the system's anti-interference capability and ensure stable modulation effects. By introducing the synergistic effect of laser power, transverse electric field, and longitudinal electric field, this embodiment can flexibly adjust the exciton state in multiple dimensions, offering greater flexibility and scalability compared to traditional one-dimensional gate voltage modulation. This approach frees exciton modulation from single-dimensional control, making it more adaptable to complex optical encryption requirements and enhancing the system's adaptability and operability.

[0026] In some embodiments of this application, the ferroelectric material substrate 200 is made of lead zirconate titanate; the semiconductor substrate 100 is a p-type doped Si substrate, or an n-type doped Si substrate.

[0027] In some embodiments of this application, the type II heterojunction structure 300 exhibits a type II bandgap structure, which can form spatially separated electrons and holes to achieve stable interlayer exciton states.

[0028] In some embodiments of this application, the material of the type II heterojunction structure 300 includes MoS2 / WSe2, MoSe2 / WS2, MoSe2 / WSe2, or WS2 / WSe2.

[0029] In some embodiments of this application, in the type II heterojunction structure 300, the n-type doped layer includes a first n-type doped sublayer 320-1 and a second n-type doped sublayer 320-2 disposed in different layers; the second n-type doped sublayer 320-2 contacts and covers portions of the p-type doped layer 310 and the first n-type doped sublayer 320-1, and is located on the surface of the contact portion between the p-type doped layer 310 and the first n-type doped sublayer 320-1 on the side facing away from the ferroelectric material substrate, and forms an integral structure with the first n-type doped sublayer.

[0030] In some embodiments of this application, the bias electrode 400 is a ring electrode, a planar strip electrode, or a cross electrode; in the bias electrode 400, the bias electrode located on the p-type doped layer side is suitable for grounding, and the bias electrode located on the n-type doped layer side is suitable for connecting the source and drain voltage; or, in the bias electrode, the bias electrode located on the p-type doped layer side is suitable for connecting the source and drain voltage, and the bias electrode located on the n-type doped layer side is suitable for grounding.

[0031] In some embodiments of this application, the lateral field electrode is a plurality of electrodes arranged symmetrically and at intervals, uniformly distributed on the side of the type II heterojunction; or, the lateral field electrode is a ring electrode.

[0032] Example 2 This embodiment provides an exciton control method for an optical encryption device, using the optical encryption device based on three-dimensional field exciton control in a two-dimensional material provided in Embodiment 1 above; including the following steps: A laser assembly is used to emit a laser towards a type II heterojunction; A longitudinal bias is provided for the type II heterojunction structure by using a longitudinal bias component to bias the electrode and the semiconductor substrate; Using a lateral electric field assembly, an external lateral electric field is provided to a type II heterojunction structure through a lateral field electrode disposed on the side of a two-dimensional material optics device; The distribution of charged and neutral excitons in the type II heterojunction is synergistically controlled by the power of the laser emitted by the laser component, the magnitude of the bias voltage provided by the longitudinal bias component, and the external transverse electric field provided by the transverse electric field component. Encrypted information is provided by the energy distribution of the centroid of the photoluminescence spectrum.

[0033] This embodiment provides an optical encryption device based on three-dimensional field exciton manipulation in two-dimensional materials. By setting up a laser component that applies laser light to the two-dimensional material optical device, a longitudinal bias component that applies longitudinal bias voltage, and a transverse electric field component that applies transverse electric field, the state of charge carriers in the type II heterojunction of the two-dimensional material optical device can be controlled by controlling the laser power, the longitudinal bias voltage, and the transverse electric field. This coordinates the control of the exciton states excited by laser energy, thereby achieving information encryption through the distribution of excitons in different states. This three-dimensional manipulation of excitons increases the exciton control dimension, thus improving the encryption complexity and adjustability.

[0034] In the control method of this embodiment: Laser power determines the intensity of exciton excitation. By adjusting the laser power, the amount and concentration of excitons produced can be controlled. Higher laser power increases the amount of excitons produced, thereby enhancing the interaction between excitons and affecting the proportional distribution of different exciton states.

[0035] A transverse electric field affects the movement of charge carriers in a material, thereby altering their distribution. By adjusting the transverse electric field, the distribution of charge carriers in the planar direction can be changed, which in turn modulates the exciton formation efficiency and the interaction between excitons and charge carriers, ultimately changing the exciton state and distribution ratio.

[0036] Longitudinal bias affects the injection density and distribution of charge carriers, precisely controls the distribution of electrons and holes in the material, changes the polarity of charged excitons, and thus changes the state distribution ratio of excitons.

[0037] Through the coordinated regulation of the above three factors, the state and distribution ratio of excitons can be controlled, thereby providing encrypted information.

[0038] The control method of the optical encryption device based on Embodiment 1 provided in this embodiment combines transverse and longitudinal electric fields, enabling precise adjustment of carrier injection, concentration distribution, and exciton states and ratios in two-dimensional materials. This provides higher precision and dimensionality for exciton control and optical encryption. Traditional electric field control methods (usually one-dimensional gate voltage control) are easily affected by the external environment, especially in complex optical systems. One-dimensional electric field control may change due to factors such as temperature, humidity, or voltage fluctuations, resulting in unsatisfactory control effects. Based on the optical encryption device provided in this embodiment, laser power, transverse bias, and longitudinal voltage can be coupled to improve the system's anti-interference capability against external interference and ensure stable control effects. By introducing the synergistic effect of laser power, transverse electric field, and longitudinal electric field, this embodiment can flexibly adjust the exciton state in multiple dimensions, offering higher flexibility and scalability compared to traditional one-dimensional gate voltage control. This approach makes exciton control no longer limited to a single dimension, better adaptable to complex optical encryption requirements, and enhances the system's adaptability and operability.

[0039] In some embodiments of this application, the power of the laser emitted by the laser component controls the amount and concentration of excitons generated; the longitudinal bias voltage and the transverse electric field jointly control the proportion of different states of excitons; wherein, the longitudinal bias voltage affects the injection density and distribution of charge carriers in the type II heterojunction structure; the transverse electric field affects the distribution position of charge carriers in the horizontal direction in the type II heterojunction structure, and regulates the interaction between excitons and charge carriers.

[0040] In some embodiments of this application, the control method further includes: defining three logical states according to the proportion of different exciton states, one of which is a cryptographic state used for information encryption during transmission and information decoding during reception; the other two states are information transmission states used to encode information by controlling the brightness or darkness of certain nodes in the array.

[0041] Furthermore, the above process is as follows: Three logical states are defined based on the energy distribution of the photoluminescence spectral centroid and two preset energy thresholds. The energy distribution of the photoluminescence spectral centroid corresponds to the proportion of excitons in different states, and each of the two preset energy thresholds corresponds to the proportion of excitons in a different state, thus obtaining the three logical states. The two preset energy thresholds can be selected according to requirements. One of these three logical states serves as a cryptographic state, used for information encryption during transmission and information decoding during reception. Correct optical encryption information transmission can only be achieved if the cryptographic states of the sending and receiving ends are identical. The other two states serve as information transmission states, where information encoding is achieved by controlling the brightness or darkness of certain nodes in the information encoding array. The decoding end, after performing logical operations in the cryptographic state, distinguishes between the photoluminescence spectral surface and the computer's logical state, thereby achieving information decoding and optical encryption information transmission.

[0042] More specifically, for example, the cryptographic state can be a 3×3 logical array (whether the cryptographic state itself is a 3×3 logical array can be selected according to actual needs; this is just an example). This is used for information encryption during transmission and information decoding during reception. The sending and receiving ends must select the same cryptographic state to achieve correct information transmission. The transmitted signal is a 3×3 character (more characters can be transmitted in specific applications; this is just an example). Through three-dimensional field exciton manipulation, we can encode the information to be transmitted, causing the energy of the photoluminescence spectral centroid in its array to present different distributions. Then, according to the cryptographic state selected by the user, logical state operations are performed on the encoded array to achieve optical encryption. After receiving the information, the receiving end also performs logical state operations on the received array according to the cryptographic state to achieve decoding. After scanning the photoluminescence spectral surface and corresponding with the computer's logical state, the 3×3 character information to be transmitted can be obtained.

[0043] To illustrate the effect of the control method in this embodiment, refer to Figures 2-5 : Figure 2 This is a graph showing the relationship between laser power and exciton peak position in an exciton control method of an optical encryption device according to an embodiment of this application. The graph shows that, with the assistance of a ferroelectric material substrate (PZT lead zirconate titanate), as the laser power increases, the charged exciton X... t and neutral exciton X 0 All exhibited a redshift, with the charged excitons showing a greater redshift. This indicates that with increasing laser power, both charged and neutral excitons exhibit a redshift, leading to a shift of the photoluminescence spectrum centroid towards a lower energy region.

[0044] Figure 3This diagram illustrates the synergistic modulation of the centroid energy of the photoluminescence spectrum by laser power and transverse electric field in an exciton modulation method of an optical encryption device according to an embodiment of this application. As can be seen from the diagram, with the increase of laser power and transverse electric field bias, the centroid energy of the photoluminescence spectrum decreases, exhibiting a phenomenon of high energy in the lower left corner and low energy in the upper right corner. This demonstrates that the transverse bias and laser power synergistically modulate the energy of the centroid of the photoluminescence spectrum, laying the theoretical and experimental foundation for its use as a three-dimensional field modulation method.

[0045] Figure 4 This diagram illustrates the synergistic modulation of the photoluminescence spectrum centroid energy by laser power and longitudinal bias in an exciton modulation method of an optical encryption device according to an embodiment of this application. As can be seen from the diagram, increasing laser power decreases the photoluminescence spectrum centroid energy, while increasing longitudinal bias increases the photoluminescence spectrum centroid energy. Overall, the diagram shows a phenomenon where the energy is lower in the lower right corner and higher in the upper left corner. This demonstrates that the longitudinal bias and laser power synergistically modulate the energy of the photoluminescence spectrum centroid, laying the theoretical and experimental foundation for its use in three-dimensional field modulation.

[0046] Figure 5 In the exciton modulation method of the optical encryption device according to an embodiment of this application, the centroid energy distribution of the photoluminescence spectrum of the lower-energy material (WSe2 material in this example) in the type II heterojunction is synergistically modulated by laser power, longitudinal bias voltage, and transverse electric field. The figure shows that the centroid energy of the photoluminescence spectrum changes significantly with variations in laser power, transverse bias voltage, and longitudinal bias voltage, which forms the basis of optical encryption.

[0047] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this application.

Claims

1. An optical encryption device based on three-dimensional field exciton manipulation in two-dimensional materials, characterized in that, include: Two-dimensional material optical devices, including: Semiconductor substrate; Ferroelectric material substrate; the ferroelectric material substrate is disposed on one side surface of the semiconductor substrate; Type II heterojunction structure; the Type II heterojunction structure is disposed on the surface of the ferroelectric material substrate facing away from the semiconductor substrate, and the p-type doped layer and n-type doped layer in the Type II heterojunction structure are at least partially disposed in the same layer; the Type II heterojunction structure is a two-dimensional material structure; Bias electrode; the bias electrode is disposed on the surface of the ferroelectric material substrate facing away from the semiconductor substrate, located on the side of the type II heterojunction structure, and at least partially contacts the p-type doped layer and at least partially contacts the n-type doped layer in the type II heterojunction structure; Also includes: A laser component is disposed on the side of the type II heterojunction structure facing away from the semiconductor substrate, and is spaced apart from the two-dimensional material optical device; A longitudinal biasing assembly is electrically connected to the biasing electrode and the semiconductor substrate to provide a longitudinal bias for the type II heterojunction structure. A transverse electric field component includes a transverse field electrode disposed on the side of the two-dimensional material optical device and spaced apart from the two-dimensional material optical device, providing an external transverse electric field for the type II heterojunction structure.

2. The optical encryption device according to claim 1, characterized in that, The ferroelectric material substrate is made of lead zirconate titanate. The semiconductor substrate is either a p-type doped Si substrate or an n-type doped Si substrate.

3. The optical encryption device according to claim 2, characterized in that, The type II heterojunction structure exhibits a type II bandgap structure, which can form spatially separated electrons and holes to achieve stable interlayer exciton states.

4. The optical encryption device according to claim 1, characterized in that, The materials of the type II heterojunction structure include MoS2 / WSe2, MoSe2 / WS2, MoSe2 / WSe2, or WS2 / WSe2.

5. The optical encryption device according to claim 1, characterized in that, In the type II heterojunction structure, the n-type doped layer includes a first sub-layer of n-type doped layer and a second sub-layer of n-type doped layer with different layers; The second sublayer of the n-type doped layer contacts and covers portions of the p-type doped layer and the first sublayer of the n-type doped layer, and is located on the surface of the contact portion between the p-type doped layer and the first sublayer of the n-type doped layer on the side facing away from the ferroelectric material substrate, and forms an integral structure with the first sublayer of the n-type doped layer.

6. The optical encryption device according to claim 1, characterized in that, The bias electrode is a ring electrode, a planar strip electrode, or a cross electrode; In the bias electrode The bias electrode located on one side of the p-type doped layer is adapted to be grounded, and the bias electrode located on one side of the n-type doped layer is adapted to be connected to the source-drain voltage; or, In the bias electrode The bias electrode located on one side of the p-type doped layer is adapted to be connected to the source / drain voltage, and the bias electrode located on one side of the n-type doped layer is adapted to be grounded.

7. The optical encryption device according to claim 1, characterized in that, The lateral field electrode consists of multiple electrodes arranged symmetrically and at intervals, and is uniformly distributed on the side of the type II heterojunction; or, The transverse field electrode is a ring electrode.

8. A method for exciton modulation in an optical encryption device, characterized in that, Using the optical encryption device based on three-dimensional field exciton modulation in two-dimensional materials as described in any one of claims 1-7; Includes the following steps: The laser assembly is used to emit a laser towards the type II heterojunction; The bias electrode and the semiconductor substrate of the longitudinal bias assembly are used to provide a longitudinal bias for the type II heterojunction structure; Using the lateral electric field component, an external lateral electric field is provided to the type II heterojunction structure through the lateral field electrode disposed on the side of the two-dimensional material optical device; The distribution of charged and neutral excitons in the type II heterojunction is synergistically controlled by the power of the laser emitted by the laser component, the magnitude of the bias voltage provided by the longitudinal bias component, and the external transverse electric field provided by the transverse electric field component, and encrypted information is provided by the energy distribution of the centroid of the photoluminescence spectrum.

9. The exciton modulation method of the optical encryption device according to claim 8, characterized in that, The power of the laser emitted by the laser component controls the amount and concentration of excitons produced; The longitudinal bias voltage and the transverse electric field together control the proportion of different states of the exciton; in, The longitudinal bias affects the carrier injection density and distribution in the type II heterojunction structure; The transverse electric field affects the horizontal distribution of charge carriers in the type II heterojunction structure, modulating the interaction between excitons and charge carriers.

10. The exciton modulation method of the optical encryption device according to claim 8, characterized in that, Three logical states are defined based on the proportions of different exciton states. One of these states serves as a cryptographic state, used for encrypting information during transmission and decoding information during reception. The other two states serve as information transmission states, and information encoding is achieved by controlling the brightness or darkness of certain nodes in the array.

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