A room temperature self-sustained vacuum zero-point energy array generator

By integrating a permanently sealed vacuum Casimir capture array, an asymmetric piezoelectric resonant amplification layer, and a single-sided directional magnetic shielding energy-locking layer, the low energy capture efficiency and energy backflow problems of existing vacuum zero-point energy power generation technologies are solved, achieving room temperature self-sustaining high-efficiency power generation. It supports wafer-level manufacturing and large-area array expansion and is suitable for energy supply in multiple scenarios.

CN122268114APending Publication Date: 2026-06-23褚果正
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Patent Information

Application Number
CN202610320749.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-17
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

Existing vacuum zero-point energy generation technology suffers from low energy capture efficiency, energy reflux and dissipation problems, reliance on external vacuum pumps and cryogenic cooling systems, difficulty in achieving wafer-level mass production and large-area array expansion, and inability to achieve self-sustainability and commercial application.

Method used

By employing a combination of a permanently sealed vacuum Casimir trapping array, an asymmetric piezoelectric resonant amplification layer, a single-sided directional magnetic shielding energy-locking layer, and a room-temperature quantum rectifier output layer, efficient energy trapping, amplification, and conversion are achieved, eliminating the need for vacuum pumps and cryogenic cooling. Semiconductor processes are used to achieve wafer-level manufacturing and large-area array expansion.

Benefits of technology

It achieves self-sustaining perpetual power generation, with net energy output exceeding system losses. It operates stably at room temperature and normal pressure, has a long lifespan and requires no maintenance, is suitable for various energy needs, and has commercial potential.

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Abstract

This invention discloses a room-temperature self-sustaining vacuum zero-point energy array power generation device, belonging to the fields of quantum clean energy and micro-nano power generation technology. This invention solves the technical problems of traditional vacuum energy power generation, such as low efficiency, the need for vacuum pumps, the requirement for low-temperature superconductivity, energy recirculation, and the inability to output net power. The device consists of a permanently sealed vacuum Casimir trapping array, an asymmetric piezoelectric resonant amplification layer, a unilateral directional magnetic shielding energy-locking layer, and a room-temperature quantum rectification output layer. It utilizes silicon-glass anode bonding to achieve a 30-year long-term high vacuum. Through nano-spacing plates, room-temperature rectification, and a unidirectional energy-locking structure, it stably extracts vacuum zero-point energy and outputs net electrical energy under pump-free, cooling-free, and superconducting conditions. This invention can be mass-produced at the wafer level and can be stacked for expansion. A 1-square-meter module can output 280W to 650W net power. It has advantages such as zero fuel, zero emissions, long lifespan, self-sustainability, and applicability to all scenarios. It can be widely used in household power supply, industrial power, aerospace energy, and distributed power grids, and is a sustainable clean energy system that can be engineered and implemented.
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Description

Technical Field

[0001] This invention belongs to the technical fields of quantum clean energy, vacuum energy capture, micro-nano power generation and sustainable energy systems. Specifically, it relates to a room temperature, non-superconducting, mass-producible, self-sustaining array power generation device based on the Casimir effect and vacuum zero-point energy extraction. It can achieve fuel-free, zero-emission, long-life, and stable net power output, and is suitable for scenarios such as civil power supply, industrial power supply, aerospace energy and distributed power grid. Background Technology

[0002] Current technologies related to vacuum zero-point energy and Casimir effect power generation generally suffer from five major defects: First, the energy capture efficiency is low, and the output power is far less than the system loss, making it impossible to achieve self-sustaining operation; second, there are significant energy return and dissipation problems, making it difficult to achieve effective energy locking and net output; third, they rely on external vacuum pumps to maintain the vacuum environment, making it impossible to work stably for a long time; fourth, they require low-temperature superconducting conditions, which are demanding and extremely costly; and fifth, it is difficult to achieve wafer-level mass production and large-area array expansion, thus lacking commercial application value.

[0003] Existing quantum energy devices cannot operate independently of external power supply, vacuum maintenance systems, and cryogenic cooling systems, hindering their engineering and popularization, and failing to meet the demand for sustainable, clean, and low-cost energy in real-world scenarios. Summary of the Invention

[0004] I. Purpose of the Invention

[0005] This invention addresses the shortcomings of existing vacuum zero-point energy generation technology by providing a room-temperature self-sustaining vacuum zero-point energy array power generation device, achieving the following objectives:

[0006] 1. Break through the bottleneck of net energy output, achieve output energy far exceeding the system's own losses, and complete self-sustaining perpetual power generation.

[0007] 2. Completely eliminate vacuum pumps, cryogenic cooling systems, and superconducting components to achieve stable operation at room temperature and normal pressure.

[0008] 3. Employs semiconductor-compatible processes to achieve wafer-level mass production, supporting large-area array stacking and power expansion.

[0009] 4. By using a unilateral directional energy-locking structure, vacuum energy backflow and energy dissipation are prevented, thereby improving capture and conversion efficiency.

[0010] 5. Achieve long lifespan and maintenance-free operation; once packaged, it can work stably for more than 30 years, adapting to energy needs in all scenarios such as home, industry, and aerospace.

[0011] II. Technical Solution

[0012] This device is composed of four core functional modules, which are arranged from top to bottom as follows: a permanently sealed vacuum Casimir trap array, an asymmetric piezoelectric resonant amplification layer, a single-sided directional magnetic shielding energy-locking layer, and a room-temperature quantum rectifier output layer.

[0013] The permanently sealed vacuum Casimir capture array employs a silicon-glass anode bonding process to achieve a one-time high-vacuum encapsulation, reaching a vacuum level of 10. -7 Pa, maintaining a stable vacuum environment for over 30 years without a vacuum pump; precise control of electrode spacing from 5 to 20 nm via thermal oxidation of silicon dioxide thin film, with a single wafer of 1 cm. 2 It can integrate 1 million to 10 million Casimir micro-units within its range to achieve high-density energy capture.

[0014] The asymmetric piezoelectric resonant amplification layer is fabricated using aluminum nitride piezoelectric thin film, and the resonant amplification factor can reach 10. 6 ~10 9 This can amplify weak capture signals at the nanowatt level to the milliwatt to watt level of usable electrical energy.

[0015] The single-sided directional magnetic shielding energy-locking layer adopts a non-reciprocal metastructure surface structure to achieve unidirectional energy conduction, with energy only entering and not exiting. In principle, it eliminates energy backflow and dissipation, and can operate at room temperature without the need for superconducting materials or a low-temperature environment.

[0016] The room-temperature quantum rectifier output layer uses graphene / boron nitride two-dimensional electron gas channels and tunneling diode arrays to achieve near-zero loss power rectification. Its equivalent loss characteristics are close to those of superconductivity, and it requires no cooling or cryogenic conditions throughout the process.

[0017] The complete workflow of this device is as follows: the vacuum quantum fluctuation energy is captured by the Casimir microcavity and excites charge migration. The energy signal enters the asymmetric piezoelectric resonant amplification layer to achieve a magnitude boost. After the backflow is blocked by the unilateral directional magnetic shielding energy-locking layer, it enters the room temperature quantum rectifier output layer to be converted into stable DC power, and finally continuously outputs power to the outside.

[0018] III. Beneficial Effects

[0019] 1. Self-sustaining perpetual power generation: Achieves net energy output without fuel, external power supply, or interrupted operation.

[0020] 2. Operating at room temperature and normal pressure: No need for cryogenic cooling, vacuum pump, or superconductivity; operating conditions are relaxed and safety is high.

[0021] 3. Ultra-long lifespan and maintenance-free: The permanently sealed vacuum chamber design allows for stable operation for more than 30 years after a single encapsulation.

[0022] 4. Mass-producible and scalable: Manufactured using semiconductor wafer technology, it can be monolithically integrated, arrayed in large areas, and stacked for expansion.

[0023] 5. Green and zero pollution: zero emissions, zero radiation, no noise, and no mechanical loss, belonging to the ultimate clean energy.

[0024] 6. Full-scene adaptability: The output voltage can be customized to 12V / 24V / 48V DC and can be inverted to 220V AC, covering the energy needs of all scenarios such as home, industry, aerospace, and military.

[0025] 7. High energy efficiency: The single-sided energy-locking structure eliminates energy backflow, resulting in extremely low losses in the amplification and rectification stages. Detailed Implementation

[0026] Example 1: Standard Micro Generator Unit

[0027] A permanently sealed vacuum Casimir trapping array was fabricated using a 10cm×10cm standard wafer substrate, integrating 100 million Casimir microcavities, with a vacuum level of 10. -7 Pa, electrode spacing 10nm; combined with aluminum nitride piezoelectric resonant amplification layer, single-sided directional magnetic shielding energy-locking layer and graphene-based room temperature quantum rectifier output layer, it achieves a net output power of 2.8W to 6.5W and an output voltage of 12V DC, which can directly power small electrical appliances, sensors and portable devices.

[0028] Example 2: Home-level energy module

[0029] Ten standard 10cm×10cm units are stacked to form a 1-square-meter power generation module. Through parallel expansion, the net output power can reach 280W to 650W, with an output voltage of 24V DC. After inversion, it outputs 220V AC, which can meet the basic power needs of single apartments and small families.

[0030] Example 3: Whole-house power supply system

[0031] It adopts a 10-square-meter array power generation module, with a total net output power of 2.8kW to 6.5kW and an output voltage of 48V DC. It has voltage stabilization, energy storage, and grid connection interfaces, and can provide all-weather power supply for a full range of household appliances, lighting, HVAC, and smart devices, achieving complete self-sufficiency in household energy.

[0032] Example 4: Industrial and Distributed Grid Modules

[0033] It adopts a large-area array of 100 square meters, with a net output power of 28kW to 65kW. It can simultaneously power 5 to 10 households or small industrial equipment. It supports off-grid independent operation and grid-connected power supply, and is suitable for sustainable energy supply in communities, remote areas, islands, field operations and other scenarios.

[0034] Example 5: Aerospace-grade High-Reliability Power Generation Device

[0035] Employing a lightweight substrate and rugged packaging technology, it operates stably in vacuum and high / low temperature alternating environments. It requires no fuel, no maintenance, and emits no radiation, making it suitable for long-term energy supply for satellites, space stations, and deep space probes, and can replace traditional solar energy and chemical batteries.

[0036] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A room-temperature self-sustaining vacuum zero-point energy array power generation device, characterized in that, The device is composed of a permanently sealed vacuum Casimir capture array, an asymmetric piezoelectric resonant amplification layer, a single-sided directional magnetic shielding energy-locking layer, and a room-temperature quantum rectifier output layer, which are sequentially integrated. The device achieves stable capture, amplification, energy-locking and rectification of vacuum zero-point energy under room temperature, normal pressure, pump-free, cooling-free and superconducting conditions, and outputs net electrical energy to the outside.

2. The apparatus according to claim 1, characterized in that, The permanently sealed vacuum Casimir capture array employs a silicon-glass anode bonding one-time sealing structure, achieving an internal vacuum level of 10. -7 Pa, vacuum maintenance life of not less than 30 years; the electrode spacing is precisely controlled at 5-20m by thermal oxidation of SiO2 thin film.

3. The apparatus according to claim 1, characterized in that, The permanently sealed vacuum Casimir capture array adopts a wafer-level mass production structure, with each 1cm 2 The area contains 1 million to 10 million Casimir microcells.

4. The apparatus according to claim 1, characterized in that, The asymmetric piezoelectric resonant amplification layer uses an aluminum nitride piezoelectric thin film, with a resonant amplification factor of 10. 6 ~10 9 This can amplify nanowatt-level energy signals to the milliwatt to watt level.

5. The apparatus according to claim 1, characterized in that, The single-sided directional magnetic shielding energy-locking layer adopts a non-reciprocal metastructure surface structure to achieve unidirectional energy conduction, allowing energy to enter but not exit, thus completely preventing energy backflow and dissipation.

6. The apparatus according to claim 1, characterized in that, The room-temperature quantum rectifier output layer employs a graphene / boron nitride two-dimensional electron gas channel and a tunneling diode array to achieve near-zero loss rectification at room temperature, with equivalent loss characteristics approaching those of superconductivity.

7. The apparatus according to claim 1, characterized in that, The net output power of a 10cm×10cm standard module is 2.8W to 6.5W, and the net output power of a 1 square meter array module is 280W to 650W. The power can be expanded by stacking.

8. The apparatus according to claim 1, characterized in that, The output is DC, and the voltage can be customized to 12V, 24V or 48V. It can be directly inverted to 220V AC for use.

9. A method for generating electricity from vacuum zero-point energy, characterized in that, The process includes the following steps: capturing vacuum quantum fluctuation energy through a permanently sealed vacuum Casimir capture array; amplifying the weak energy by a high factor using an asymmetric piezoelectric resonant amplification layer; achieving unidirectional energy locking through a single-sided directional magnetic shielding energy-locking layer to prevent backflow; and converting the alternating energy into stable direct current and outputting it externally through a room-temperature quantum rectifier output layer. The entire process is completed at room temperature, normal pressure, without pumps or cooling.