Perovskite solar cell, photovoltaic module, power utilization device, and power generation device

Abstract

The application provides a perovskite solar cell, a photovoltaic module, an electric device and a power generation device. The perovskite solar cell comprises a first electrode, a composite perovskite layer and a second electrode; the composite perovskite layer is arranged between the first electrode and the second electrode; the composite perovskite layer comprises a perovskite material and a piperazine derivative, the piperazine derivative comprises anions and cations, and the cations of the organic compound have the structure shown in formula (1). The perovskite solar cell has high photoelectric conversion efficiency.

Description

Technical Field

[0001] This application relates to the field of battery technology, and in particular to a perovskite solar cell, photovoltaic module, electrical device, and power generation device. Background Technology

[0002] Perovskite solar cells (PSCs) are devices that convert solar energy into electrical energy using the photoelectric conversion mechanism of perovskite crystal materials. They are currently the third generation of solar cells and have many advantages such as high photoelectric conversion efficiency, simple manufacturing process, and low production cost. They have been extensively studied in recent years.

[0003] However, current perovskite solar cells are prone to non-radiative recombination losses, resulting in low photoelectric conversion efficiency. Summary of the Invention

[0004] To achieve the above objectives, this application provides a perovskite solar cell that can effectively improve photoelectric conversion efficiency, as well as a photovoltaic module, electrical device, and power generation device comprising the perovskite solar cell.

[0005] A first aspect of this application provides a perovskite solar cell, comprising a first electrode, a composite perovskite layer, and a second electrode; the composite perovskite layer is disposed between the first electrode and the second electrode; the composite perovskite layer comprises a perovskite material and a piperazine derivative, the piperazine derivative comprising an anion and a cation, the cation of the piperazine derivative having the structure shown in formula (1):

[0006]

[0007] R1 and R2 each independently include H or the structure shown in equation (1-1) or (1-2) below, and R1 and R2 are not both H at the same time:

[0008]

[0009] R3 includes a single bond, a C1-C6 alkylene group, or a C6-C10 arylene group;

[0010] R4 includes -S-, -PH-, -NH-, -O-, or C6- to C10 arylene groups;

[0011] R5 includes C1-C6 alkyl groups that are substituted or unsubstituted with oxyacid groups.

[0012] R6 includes C1-C6 alkylene groups;

[0013] Indicates the connection site.

[0014] The perovskite solar cells described above can effectively passivate perovskite materials by using piperazine derivatives modified with polyamine groups or combinations of at least one of amine groups, heteroatoms, and aryl groups, thereby achieving higher photoelectric conversion efficiency.

[0015] In some embodiments, the anion of the piperazine derivative includes a halide ion or a pseudohalogen ion.

[0016] In some embodiments, R4 comprises -S- or C6- to C10 aryl groups. By using S as a heteroatom or employing a diamine group for structural modification, defects in perovskite materials can be more effectively passivated, and the stability of the composite perovskite layer structure can be increased, thereby effectively improving the photoelectric conversion efficiency and lifespan of the battery. Using aryl groups allows for the adjustment of material energy levels, improving photoelectric conversion performance.

[0017] In some embodiments, R6 comprises C1-C3 alkylene groups. By appropriately controlling the alkyl chain length, the energy level of the material can be adjusted, thereby improving the photoelectric conversion efficiency.

[0018] In some embodiments, R1 and R2 each independently include H or the structure shown in equations (1-3), (1-4), or (1-5):

[0019]

[0020] n1, n2, and n4 are each independently 1, 2, or 3;

[0021] n3 can be 0, 1, 2 or 3 independently;

[0022] R 51 This includes C1-C3 alkyl groups, whether substituted or unsubstituted with oxyacid groups.

[0023] By employing R1 and R2 groups with appropriate structures, defects in perovskite materials can be more effectively passivated, and the stability of the composite perovskite layer structure can be increased, thereby effectively improving the photoelectric conversion efficiency and lifespan of the battery.

[0024] In some embodiments, the cation of the piperazine derivative has the following structure:

[0025]

[0026] In some embodiments, the composite perovskite layer has one or both of the following characteristics:

[0027] (1) In the composite perovskite layer, the piperazine derivative is doped into the perovskite material;

[0028] (2) The composite perovskite layer includes a perovskite body layer and a passivation layer. The perovskite body layer includes the perovskite material, and the passivation layer includes the piperazine derivative.

[0029] In some embodiments, the composite perovskite layer has one or both of the following characteristics:

[0030] (1) The molar percentage of the piperazine derivative doped in the perovskite material is 0.1% to 2%;

[0031] (2) The thickness of the passivation layer is 0.1 nm to 10 nm.

[0032] In some embodiments, the first electrode, the perovskite body layer, the passivation layer, and the second electrode are stacked sequentially, wherein the first electrode includes a transparent electrode.

[0033] A second aspect of this application provides a piperazine derivative comprising an anion and a cation, wherein the cation of the piperazine derivative has the structure shown in formula (1):

[0034]

[0035] R1 and R2 each independently include H or the structure shown in equation (1-1) or (1-2) below, and R1 and R2 are not both H at the same time:

[0036]

[0037] R3 includes a single bond, a C1-C6 alkylene group, or a C6-C10 arylene group;

[0038] R4 includes -S-, -PH-, -NH-, -O-, or C6- to C10 arylene groups;

[0039] R5 includes C1-C6 alkyl groups that are substituted or unsubstituted with oxyacid groups.

[0040] R6 includes C1-C6 alkylene groups;

[0041] Indicates the connection site.

[0042] In some embodiments, the piperazine derivative has one or both of the following characteristics:

[0043] (1) The anions of the piperazine derivatives include halide ions or pseudohalogen ions;

[0044] (2) R1 and R2 each independently include H or the structure shown in equations (1-3), (1-4), or (1-5):

[0045]

[0046] n1, n2, and n4 are each independently 1, 2, or 3;

[0047] n3 can be 0, 1, 2 or 3 independently;

[0048] R 51 This includes C1-C3 alkyl groups, whether substituted or unsubstituted with oxyacid groups.

[0049] A third aspect of this application provides a photovoltaic module comprising the perovskite solar cell described in the first aspect or the piperazine derivative described in the second aspect.

[0050] A fourth aspect of this application provides an electrical device comprising the perovskite solar cell described in the first aspect, the piperazine derivative described in the second aspect, or the photovoltaic module described in the third aspect.

[0051] A fifth aspect of this application provides a power generation device, comprising the perovskite solar cell described in the first aspect, the piperazine derivative described in the second aspect, or the photovoltaic module described in the third aspect. Attached Figure Description

[0052] To better describe and illustrate the embodiments or examples provided in this application, reference may be made to one or more accompanying drawings. Additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed applications, the currently described embodiments or examples, or the best mode of conduct of these applications as currently understood. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0053] Figure 1 This is a schematic diagram of the structure of a perovskite solar cell according to one embodiment of this application.

[0054] Wherein, 100: first electrode, 200: first transport layer, 300: perovskite body layer, 400: passivation layer, 500: second transport layer, and 600: second electrode. Detailed Implementation

[0055] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a thorough and complete understanding of the disclosure of this application.

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0057] The "range" disclosed in this application can be defined in the form of a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of the specific range. Ranges defined in this way can include or exclude endpoints. Any endpoint can be included or excluded independently, and they can be combined arbitrarily; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60–120 and 80–110 are listed for a specific parameter, it is expected that ranges of 60–110 and 80–120 are also included. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are also listed, then the following ranges are all expected: 1–3, 1–4, 1–5, 2–3, 2–4, and 2–5. In this application, unless otherwise stated, the numerical range "a–b" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0" and "5" have been listed in this article; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, when a parameter is described as an integer ≥ 2, it is equivalent to listing integers such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. For instance, when a parameter is described as an integer selected from "2-10", it is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0058] In this application, the terms "multiple" or "various" are used unless otherwise specified, referring to a quantity greater than or equal to 2. For example, "one or more" means one or more types.

[0059] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0060] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment or implementation of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments. The term "implementation" as used herein has a similar understanding.

[0061] Those skilled in the art will understand that the order in which the steps are written in the methods of various embodiments or examples does not imply a strict execution order and does not constitute any limitation on the implementation process. The detailed execution order of each step should be determined by its function and possible internal logic. Unless otherwise specified, all steps of this application may be performed sequentially or randomly, preferably sequentially. For example, if the method includes steps (a) and (b), it means that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, if the method may also include step (c), it means that step (c) can be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0062] In this application, unless otherwise specified, A (e.g., B) means that B is a non-limiting example of A, and it is understood that A is not limited to B.

[0063] In this application, "optionally," "optionally," and "optional" mean that something is optional, that is, it means that it is selected from either "with" or "without." If there are multiple "optional" entries in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "optional" entry shall be independent.

[0064] In this application, the use of the word "comprising" to describe open-ended technical features or solutions does not exclude additional members beyond those listed unless otherwise specified. It can be considered as providing both closed-ended features or solutions comprised of the listed members and open-ended features or solutions that include additional members beyond those listed. For example, the phrase "R1 comprises H" can mean that R1 is H or R1 is selected from H, or it can mean that R1 is another group comprising H.

[0065] In this application, "halogen" refers to fluorine (F), chlorine (Cl), bromine (Br), and iodine (I).

[0066] In this application, the term "alkyl" refers to a monovalent residue formed by the loss of a hydrogen atom from a saturated hydrocarbon containing a primary (normal) carbon atom, a secondary carbon atom, a tertiary carbon atom, a quaternary carbon atom, or a combination thereof. Phrases containing this term, such as "C1-C6 alkyl," refer to alkyl groups containing 1 to 6 carbon atoms, and each occurrence can independently be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, or C6 alkyl. Suitable examples include, but are not limited to: methyl (Me, -CH3), ethyl (Et, -CH2CH3), 1-propyl (n-Pr, n-propyl, -CH2CH2CH3), 2-propyl (i-Pr, i-propyl, -CH(CH3)2), 1-butyl (n-Bu, n-butyl, -CH2CH2CH2CH3), 2-methyl-1-propyl (i-Bu, i-butyl, -CH2CH(CH3)2), 2-butyl (s-Bu, s-butyl, -C H(CH3)CH2CH3), 2-methyl-2-propyl (t-Bu, t-butyl, -C(CH3)3), 1-pentyl (n-pentyl, -CH2CH2CH2CH2CH3), 2-pentyl (-CH(CH3)CH2CH2CH3), 3-pentyl (-CH(CH2CH3)2), 2-methyl-2-butyl (-C(CH3)2CH2CH3), 3-methyl-2-butyl (-CH(CH3)CH(CH3)2), 3-methyl -1-Butyl(-CH2CH2CH(CH3)2), 2-Methyl-1-Butyl(-CH2CH(CH3)CH2CH3), 1-Hexyl(-CH2CH2CH2CH2CH2CH3), 2-Hexyl(-CH(CH3)CH2CH2CH2CH3), 3-Hexyl(-CH(CH2CH3)(CH2CH2CH3)), 2-Methyl-2-pentyl(-C(CH3)2CH2CH2CH3), 3-Methyl-2-pentyl( -CH(CH3)CH(CH3)CH2CH3), 4-methyl-2-pentyl (-CH(CH3)CH2CH(CH3)2), 3-methyl-3-pentyl (-C(CH3)(CH2CH3)2), 2-methyl-3-pentyl (-CH(CH2CH3)CH(CH3)2), 2,3-dimethyl-2-butyl (-C(CH3)2CH(CH3)2), 3,3-dimethyl-2-butyl (-CH(CH3)C(CH3)3).

[0067] In this application, "aryl" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl. For polycyclic rings, at least one is an aromatic ring system. For example, "C6-C10 aryl" refers to an aryl group containing 6 to 10 carbon atoms, and each occurrence can be independently C6, C7, C8, C9, or C10 aryl. Suitable examples include, but are not limited to, benzene, biphenyl, naphthalene, and their derivatives.

[0068] In this application, "halogen" refers to F, Cl, Br, and I.

[0069] In this application, "pseudohalogen" refers to atomic groups that are chemically similar to halogens and exhibit halogen-like behavior in compound formation, redox reactions, and other aspects. Specifically, pseudohalogens include CN, SCN, OCN, SeCN, SCSN, N3, TeCN, etc.

[0070] Solar cells, also known as photovoltaic cells, are devices that directly convert light energy into electrical energy through the photoelectric effect or photochemical effect. Perovskite solar cells are solar cells that utilize perovskite material as the light-absorbing material. Compared with other solar cells, perovskite solar cells have high photoelectric conversion efficiency. The photoelectric conversion principle of perovskite solar cells is as follows: Incident light (e.g., sunlight) enters the device and reaches the perovskite light-absorbing layer, where it is absorbed. Under the excitation of the incident light, the perovskite light-absorbing layer generates electron-hole pairs. Under the action of an electric field, the holes and electrons separate, with electrons transferring to one electrode and holes transferring to the other electrode. Subsequently, a circuit is formed through an external circuit, which can be used to drive a load.

[0071] Traditional perovskite solar cells are prone to nonradiative recombination losses, which result in a low power conversion interface, making it difficult to improve the photoelectric conversion efficiency (PCE) of perovskite solar cells. Introducing passivation materials into the bulk phase and / or interfaces of the perovskite layer can effectively reduce the perovskite defect state density and lower nonradiative recombination losses. However, the passivation effect of current passivation materials still needs further improvement to achieve higher PCE.

[0072] Based on this, this application designs and synthesizes a novel passivation material, which is a type of piperazine derivative. Modification is performed on the piperazine base using polyamine groups, or a combination of at least one of amine groups and heteroatoms or aryl groups. This allows for strong coordination with perovskite materials, resulting in a stable coordination structure. For example, the lone pair electrons in the amine group substitute for halides to form Pb-N bonds with B ions in the perovskite material (generally ABX3); they insert into A vacancies in the perovskite material or react with undercoordinated B ions, thereby regulating surface termination and releasing residual surface stress; they move dipoles away from the surface of the perovskite layer, exposing positively charged ammonium terminal groups (such as MA+ / FA+) and enabling bands in the perovskite material, causing band bending between the perovskite and the electron transport layer, which is beneficial for electron charge transfer, etc. This effectively passivates various types of defects in perovskite, reduces non-radiative recombination losses, optimizes carrier transport, and achieves higher photoelectric conversion efficiency in perovskite solar cells.

[0073] One embodiment of this application provides a perovskite solar cell, including a first electrode, a composite perovskite layer, and a second electrode; the composite perovskite layer is disposed between the first electrode and the second electrode; the composite perovskite layer includes a perovskite material and a piperazine derivative, the piperazine derivative including anions and cations, and the cation of the piperazine derivative has the structure shown in formula (1):

[0074]

[0075] R1 and R2 each independently include H or the structure shown in equation (1-1) or (1-2) below, and R1 and R2 are not both H at the same time:

[0076]

[0077] R3 includes a single bond, a C1-C6 alkylene group, or a C6-C10 arylene group;

[0078] R4 includes -S-, -PH-, -NH-, -O-, or C6- to C10 arylene groups;

[0079] R5 includes C1-C6 alkyl groups that are substituted or unsubstituted with oxyacid groups.

[0080] R6 includes C1-C6 alkylene groups;

[0081] Indicates the connection site.

[0082] The perovskite solar cells described above can effectively passivate perovskite materials by using piperazine derivatives modified with polyamine groups or combinations of at least one of amine groups, heteroatoms, and aryl groups, thereby achieving higher photoelectric conversion efficiency.

[0083] Without limitation, the piperazine derivative can be structurally characterized by NMR spectroscopy after separation from the perovskite material. The method of separation from the perovskite material depends on its composite arrangement with the perovskite material. For example, when used as a passivation layer, it can be directly sampled; when used as a dopant, it can be separated from the perovskite material by chromatography or extraction before sampling.

[0084] In some embodiments, the anion of the piperazine derivative includes a halide ion or a pseudohalogen ion. For example, the halide ion includes F... - Cl - ,Br - I - One or more of the following; pseudohalogen ions include CN. - SCN - OCN - SeCN - SCSN - N3 - TeCN - One or more of the following. Further, anions include I... - or Cl - Using I - or Cl - As anionic groups, they can better passivate defects in perovskites, wherein the anions include I... - In this case, the piperazine derivative can be used as a passivation layer to passivate the interface of the perovskite material, and the anion includes Cl. - In this case, the piperazine derivative can be used to passivate perovskite materials in bulk by doping.

[0085] In some embodiments, R4 comprises -S- or C6- to C10 aryl groups. By using S as a heteroatom or employing a diamine group for structural modification, defects in perovskite materials can be more effectively passivated, and the stability of the composite perovskite layer structure can be increased, thereby effectively improving the photoelectric conversion efficiency and lifespan of the battery. Using aryl groups allows for the adjustment of material energy levels, improving photoelectric conversion performance.

[0086] In some embodiments, R6 comprises C1-C3 alkylene groups. By appropriately controlling the alkyl chain length, the energy level of the material can be adjusted, thereby improving the photoelectric conversion efficiency.

[0087] In addition, without limitation, the oxyacid group includes COOH, PO(OH)2 or SO3H.

[0088] In some embodiments, R1 and R2 each independently include H or the structure shown in equations (1-3), (1-4), or (1-5):

[0089]

[0090] n1, n2, and n4 are each independently 1, 2, or 3;

[0091] n3 can be 0, 1, 2 or 3 independently;

[0092] R 51 This includes C1-C3 alkyl groups, whether substituted or unsubstituted with oxyacid groups.

[0093] By employing R1 and R2 groups with appropriate structures, defects in perovskite materials can be more effectively passivated, and the stability of the composite perovskite layer structure can be increased, thereby effectively improving the photoelectric conversion efficiency and lifespan of the battery.

[0094] Without limitation, the cations of piperazine derivatives have the following structures:

[0095]

[0096] Without limitation, piperazine derivatives can be directly doped into perovskite materials, i.e., the perovskite can be passivated in bulk phase by means of the piperazine derivative, or the perovskite can be passivated at the interface by means of a passivation layer.

[0097] Specifically, in some embodiments, piperazine derivatives are doped into the perovskite material in the composite perovskite layer. Further, the molar percentage of the piperazine derivative doped into the perovskite material is 0.1% to 5%. Reasonably controlling this molar percentage of doping can, on the one hand, better passivate perovskite defects, and on the other hand, facilitate the crystallization of perovskite to form a high-quality composite perovskite layer, thereby obtaining better photoelectric conversion efficiency. Specifically, this molar percentage includes, but is not limited to: 0.1%, 0.3%, 0.5%, 0.7%, 1%, 1.3%, 1.5%, 1.7%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%, or any range between the foregoing. Further, the molar percentage of the piperazine derivative doped into the perovskite material is 0.1% to 2%.

[0098] Without limitation, the molar percentage of organic compounds doped in perovskite materials can be determined by analyzing the elemental composition of the sample using transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS), thereby determining the distribution of different elements in the sample and thus obtaining the molar percentage of organic compounds doped.

[0099] In some other embodiments, the composite perovskite layer includes a perovskite body layer and a passivation layer, wherein the perovskite body layer includes a perovskite material and the passivation layer includes a piperazine derivative.

[0100] Furthermore, the thickness of the passivation layer is 0.1 nm to 10 nm. Specifically, the thickness of the passivation layer includes, but is not limited to, 0.1 nm, 0.5 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any range between the foregoing. Without limitation, the thickness of the passivation layer can be measured by transmission electron microscopy (TEM) or fluid-induced vibration (FIV).

[0101] In some embodiments, a perovskite solar cell includes a first electrode, a perovskite bulk layer, a passivation layer, and a second electrode stacked sequentially, wherein the first electrode includes a transparent electrode. Therefore, the passivation layer is an upper passivation layer; understandably, "upper passivation layer" refers to a passivation layer disposed on the side of the perovskite bulk layer away from the incident light (i.e., the transparent electrode). Further, as... Figure 1 As shown, the perovskite solar cell includes a first electrode 100, a first transport layer 200, a perovskite body layer 300, a passivation layer 400, a second transport layer 500, and a second electrode 600 stacked sequentially. The first electrode 100 includes a transparent electrode.

[0102] Understandably, perovskite solar cells can be either inverted pin cells or conventional nip cells. For conventional cells, the first transport layer 200 is an electron transport layer and the second transport layer 500 is a hole transport layer. For inverted cells, the first transport layer 200 is a hole transport layer and the second transport layer 500 is an electron transport layer. The transparent electrode is used for light incident. Furthermore, when the second transport layer 500 is an electron transport layer, a hole blocking layer may also be provided between the electron transport layer and the second electrode 600.

[0103] Understandably, perovskite solar cells can be fabricated using conventional methods in the art. Specifically, the fabrication method for a perovskite solar cell, which is a formal structure, includes the following steps:

[0104] Step 1: Etch and clean the transparent electrode, then dry;

[0105] Step 2: Fabricate an electron transport layer on the transparent electrode;

[0106] Step 3: Prepare a composite perovskite layer on the electron transport layer;

[0107] When piperazine derivatives are directly doped into perovskite materials, a composite perovskite layer is obtained by mixing piperazine derivatives with perovskite materials and forming a film.

[0108] When an organic compound is used as a passivation layer to passivate the interface of the perovskite, the perovskite material is first formed into a film to obtain the perovskite bulk layer, and then the organic compound is formed into a film on the surface of the perovskite bulk layer to obtain the passivation layer, thus obtaining a composite perovskite layer.

[0109] Step 4: Prepare a hole transport layer on the perovskite layer;

[0110] Step 5: Fabricate a second electrode on the hole transport layer.

[0111] Specifically, the perovskite solar cell has an inverted structure, and its fabrication method includes the following steps:

[0112] Step 1: Etch and clean the transparent electrode, then dry;

[0113] Step 2: Fabricate a hole transport layer on the transparent electrode;

[0114] Step 3: Prepare a composite perovskite layer on the hole transport layer;

[0115] When piperazine derivatives are directly doped into perovskite materials, a composite perovskite layer is obtained by mixing piperazine derivatives with perovskite materials and forming a film.

[0116] When an organic compound is used as a passivation layer to passivate the interface of the perovskite, the perovskite material is first formed into a film to obtain the perovskite bulk layer, and then the organic compound is formed into a film on the surface of the perovskite bulk layer to obtain the passivation layer, thus obtaining a composite perovskite layer.

[0117] Step 4: Prepare an electron transport layer on the perovskite layer;

[0118] Step 5: Fabricate a second electrode on the electron transport layer.

[0119] Without limitation, the layers can be prepared by spin coating or vapor deposition.

[0120] In some embodiments, the perovskite material includes a perovskite-type metal halide with the chemical formula ABX3 or A2CDX6; wherein A is a monovalent cation, B is a divalent cation, C is a monovalent cation, D is a trivalent cation, and X is a monovalent anion.

[0121] In some embodiments, A comprises one or more of a monovalent metal cation and a monovalent organic cation. Further, the monovalent metal cation in A includes Li. + Na + K + 、Rb + and Cs + One or more of the following, wherein the monovalent organic cation includes one or more of organic amine ions, formamidinium ions, and imidazole-type ions. Further, the organic amine ion includes methylamine ions (CH3NH3). + MA + ), dimethyl diammonium ion (MDA) 2+ ), phenylethylammonium ion (PEA) +), oleyl ammonium ion (OA) + ( ), one or more of ethylamine ions, propylamine ions, butylamine ions, pentamine ions, and hexamine ions.

[0122] In some embodiments, B comprises one or more of divalent metal cations and divalent organic cations. Further, the divalent metal cation in B comprises one or more of the divalent cations of the following elements: lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, beryllium, magnesium, calcium, strontium, barium, indium, aluminum, manganese, chromium, molybdenum, and europium.

[0123] In some embodiments, C comprises one or more of a monovalent metal cation and a monovalent organic cation. Further, the monovalent metal cation in C comprises Cs. + Ag + K + and Rb + One or more of them.

[0124] In some embodiments, D comprises one or more of a trivalent metal cation and a trivalent organic cation. Further, the trivalent metal cation in D includes Bi. 3+ Ni 3+ Fe 3+ Sb 3+ In 3+ and Cu 3+ One or more of them.

[0125] In some embodiments, X comprises one or more of a monovalent inorganic anion and a monovalent organic anion. Further, X comprises one or more of a halide ion and a halide-like ion; optionally, X comprises F. - Cl - ,Br - I - CN - CH3COO - SCN - SeCN - One or more of them.

[0126] For example, perovskite materials include (FA) 0.98 MA 0.02 ) 0.95 Cs 0.05 Pb(I 0.98 Br 0.02 3. CH8I3N2Pb(FAPbI3), Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br0.17 )3, CsPbBr3, CsPbI3, Cs 0.05 FA 0.95 PbI3 and MA 0.85 FA 0.15 One or more of PbI3. In some embodiments, the electron transport layer functions to transport electrons generated by the excitation of the perovskite light-absorbing layer to an adjacent electrode and to prevent hole transport. The electron transport layer may include an electron transport material, which may include one or more of doped or undoped tin oxide, doped or undoped titanium oxide, doped or undoped zinc oxide, or doped or undoped organic molecular materials. The doping element may include one or more of Mg, Zn, Ag, Li, Rb, Ta, and Nb, for example, by doping with chlorides of the above elements. Specifically, the electron transport material may include [6,6]-phenylC 61 Methyl butyrate (PC) 61 BM), [6,6]-phenyl C 71 Methyl butyrate PC 71 BM, Fullerene C 60 Fullerene C 70 One or more of the following: tin dioxide (SnO2), zinc oxide (ZnO), etc.

[0127] In some embodiments, the hole blocking layer can improve electron extraction performance and block hole transport. The material of the hole blocking layer may be one or more of the following materials and their derivatives: tin oxide and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).

[0128] In some embodiments, the hole transport layer can extract and transport hole carriers and block the passage of free electrons. The hole transport layer may include hole transport materials, which may include, but are not limited to, one or more of the following materials and their derivatives: 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD), polytriarylamine (PTAA), nickel oxide (NiOx), poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), WO3, etc., materials that can transport holes and block electrons. SAMs materials may also be used. Without limitation, SAMs materials include [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz), [4-(9H-carbazole-9-yl)butyl]phosphonic acid (4PACz), and [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphonic acid (Br-4PACz). It is one or more of the following: Cz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), [2-(3,6-dimethyl-9H-carbazole-9-yl)ethyl]phosphonic acid (Me-2PACz), [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), and [2-(3,6-dibromo-9H-carbazole-9-yl)ethyl]phosphonic acid (Br-2PACz).

[0129] In some embodiments, at least one of the first and second electrodes is a transparent electrode for light incident. In some embodiments, the first electrode is a transparent electrode. Without limitation, the material of the transparent electrode can be exemplified, but is not limited to, one or more of the following materials: FTO (fluorine-doped tin oxide), ITO (tin-doped indium oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), IWO (tungsten-doped indium oxide), etc.

[0130] In some embodiments, the second electrode layer comprises a conductive material. Further, the conductive material can be an organic conductive material, an inorganic conductive material, or a combination thereof. Non-limiting examples of inorganic conductive materials include metallic conductive materials. Further, metallic conductive materials can include any one of gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), bismuth (Bi), platinum (Pt), magnesium (Mg), or any suitable mixture of the aforementioned elements. The conductive material can include a conductive oxide. Further, the conductive material can be a conductive oxide; non-limiting examples of conductive oxides can include one or more of FTO, ITO, IWO, AZO, etc.

[0131] In some embodiments, the perovskite solar cell further includes a substrate layer disposed on the side of the first electrode, which serves as a transparent electrode, away from the perovskite composite layer, for supporting the perovskite solar cell. The substrate layer can be, but is not limited to, a glass substrate or a flexible substrate. In some embodiments, the flexible substrate layer may be made of, for example (but not limited to), an organic polymer material, and further, may be a mixture of one or more of the following materials in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc.

[0132] In some embodiments, perovskite solar cells include single-junction cells and tandem cells. Tandem cells include double-junction cells, triple-junction cells, quadruple-junction cells, etc., which contain perovskite solar cells. Examples include perovskite-perovskite tandem cells and perovskite-crystalline silicon tandem cells.

[0133] Other embodiments of this application provide a piperazine derivative comprising an anion and a cation, wherein the cation of the piperazine derivative has the structure shown in formula (1):

[0134]

[0135] R1 and R2 each independently include H or the structure shown in equation (1-1) or (1-2) below, and R1 and R2 are not both H at the same time:

[0136]

[0137]

[0138] R3 includes a single bond, a C1-C6 alkylene group, or a C6-C10 arylene group;

[0139] R4 includes -S-, -PH-, -NH-, -O-, or C6- to C10 arylene groups;

[0140] R5 includes C1-C6 alkyl groups that are substituted or unsubstituted with oxyacid groups.

[0141] R6 includes C1-C6 alkylene groups;

[0142] Indicates the connection site.

[0143] Understandably, the aforementioned organic compounds have similar schemes and effects to the organic compounds in the aforementioned perovskite solar cells, and will not be elaborated further here.

[0144] Other embodiments of this application provide a photovoltaic module, including a perovskite solar cell as described above or an organic compound as described above.

[0145] Other embodiments of this application provide an electrical device, including a perovskite solar cell as described above, an organic compound as described above, or a photovoltaic module as described above.

[0146] Other embodiments of this application provide a power generation device, including a perovskite solar cell as described above, an organic compound as described above, or a photovoltaic module as described above.

[0147] In some embodiments, the perovskite solar cell described above can be a power generation device that functions as an electrical device. The type of power generation device may include, but is not limited to, integrated power generation. The location of the power generation device may include, but is not limited to, the roof of a vehicle, the back panel, etc.

[0148] Furthermore, the aforementioned electrical devices may include mobile devices, such as electric vehicles, electric trains, ships and satellites, power generation systems, etc., but are not limited to these.

[0149] As another implementation method, the power supply device can be a wearable device, such as a watch.

[0150] To make the technical problems, technical solutions, and beneficial effects solved by this application clearer, the application will be further described in detail below with reference to embodiments and accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this application or its application. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0151] Where specific techniques or conditions are not specified in the examples, they shall be performed in accordance with the techniques or conditions described in the literature in this field or in accordance with the product instructions. Reagents or instruments whose manufacturers are not specified are all commercially available conventional products.

[0152] Preparation Example 1:

[0153]

[0154] The synthesis method is as follows:

[0155]

[0156] The preparation steps are as follows:

[0157] Compound 1 (1 mmol), 50% hydroiodic acid (2 mL), and ethanol (10 mL) were mixed together; after stirring for 6 hours under nitrogen protection, the mixture was added dropwise to 50 mL of diethyl ether to obtain the piperazine derivative of Preparation Example 1.

[0158] 1 H NMR (400MHz, DMSO-d6) δ8.31(s,3H),8.00(s,1H),7.38(s,2H),5.84(s,2H),3.98-3.91(m,4H),3.36-3.34(m,4H).

[0159] Preparation Example 2:

[0160]

[0161] The synthesis method is as follows:

[0162]

[0163] The preparation steps are the same as in Preparation Example 1, the main difference being that compound 1 is replaced with compound 2.

[0164] 1 H NMR (400MHz, DMSO-d6) δ8.00(s,1H),7.38(s,2H),5.84(s,2H),3.98-3.91(m,4H),3.36-3.34(m,4H),1.79-1.75(m,3H).

[0165] Preparation Example 3:

[0166]

[0167] The synthesis method is as follows:

[0168]

[0169] The preparation steps are the same as in Preparation Example 1, the main difference being that compound 1 is replaced with compound 3.

[0170] 1 H NMR (400MHz, DMSO-d6) δ8.31(s,6H),8.05(s,2H),5.84(s,4H),3.98-3.91(m,8H).

[0171] Preparation Example 4:

[0172]

[0173] The synthesis method is as follows:

[0174]

[0175] The preparation steps are as follows:

[0176] Compound 1 (1 mmol), compound 4 (1.1 mol), hydroiodic acid (2 mL) with a mass fraction of 50%, and ethanol (10 mL) were mixed. After stirring for 6 hours under nitrogen protection, the mixture was added dropwise to 50 mL of diethyl ether to obtain the piperazine derivative of Preparation Example 4.

[0177] 1 H NMR (400MHz, DMSO-d6) δ8.31(s,3H),8.00(s,2H),5.84(s,4H),3.98-3.91(m,4H),3.36-3.34(m,4H),2.48-2.45(m,2H),1.79-1.75(m,3H).

[0178] Preparation Example 5:

[0179]

[0180] The synthesis method is as follows:

[0181]

[0182] The preparation steps are as follows:

[0183] Compound 5 (1 mmol) and ammonia (1.1 mmol, methanol solvent) were stirred at room temperature for 3 h, and then sodium borohydride (1.1 mmol) was added and stirred at room temperature for 1 h to obtain compound 6; then 50% hydroiodic acid (2 mL) and ethanol (10 mL) were added and mixed; after stirring for 6 hours under nitrogen protection, 50 mL of diethyl ether was added dropwise to obtain the piperazine derivative of Preparation Example 5.

[0184] 1 H NMR(400MHz,DMSO-d6)δ8.31(s,3H),8.20(s,1H),7.31-7.23(m,6H),4.07(s,4 H),3.98-3.91(m,4H),3.36-3.34(m,4H),2.48-2.45(m,2H),1.79-1.75(m,3H).

[0185] Preparation Example 6:

[0186]

[0187] The synthesis method is as follows:

[0188]

[0189] The preparation steps are as follows:

[0190] Compound 1 (1 mmol) and Compound 7 (1.1 mmol) were mixed in ethanol (10 mL) to obtain Compound 8. Then, Compound 9 (1.1 mmol), 50% hydroiodic acid (2 mL), and ethanol (10 mL) were added and mixed. After stirring for 6 hours under nitrogen protection, 50 mL of diethyl ether was added dropwise to obtain the piperazine derivative of Preparation Example 6.

[0191] 1 H NMR (400MHz, DMSO-d6) δ12.36(s,1H),8.31(s,3H),8.00(s,2H),5.24(s,4H),3.98-3.91(m,4H),3.36-3.34(m,4H),3.32(s,2H).

[0192] Preparation Example 7:

[0193]

[0194] The synthesis method is as follows:

[0195]

[0196] The preparation steps are the same as in Preparation Example 1, except that 50% hydroiodic acid is replaced with 36% hydrochloric acid.

[0197] 1 H NMR (400MHz, DMSO-d6) δ8.31(s,3H),8.00(s,1H),7.38(s,2H),5.84(s,2H),3.98-3.91(m,4H),3.36-3.34(m,4H).

[0198] Example 1

[0199] (1) Preparation of the first electrode:

[0200] A glass cleaning rack containing FTO transparent conductive glass (FTO thickness approximately 500 nm) was placed in an ultrasonic cleaner and cleaned for 20 minutes each with glass cleaner, deionized water, isopropanol, and anhydrous ethanol. Finally, it was dried in a 70°C oven for 5 minutes. The transparent glass was then treated with a UV-O3 cleaner under a fume hood for 20 minutes and cooled to room temperature for later use.

[0201] (2) Preparation of hole transport layer

[0202] 1 mg of SAMs material Me-4PACz was weighed as the hole transport layer and dispersed in 3 mL of isopropanol. The mixture was shaken for 20 min until Me-4PACz was completely dissolved. 150 μL of the solution was then spin-coated onto the conductive surface of FTO transparent conductive glass at 4000 rpm for 25 s using a spin coater. After spin-coating, the glass was placed on a hot plate and annealed at 100 °C for 5 min, then allowed to cool naturally to room temperature to obtain a hole transport layer with a thickness of 2 nm.

[0203] (3) Preparation of perovskite layer

[0204] 496.32 mg of formamidinium hydroiodate (FAI), 2.05 mg of methylammonium chloride (MAI), 4.87 mg of methylammonium bromide (MABr), 40.27 mg of cesium iodide (CsI), 25.69 mg of lead bromide (PbBr2), and 1396.86 mg of lead iodide (PbI2) were dissolved in 2 mL of a mixture of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (DMF to DMSO volume ratio of 4:1) to obtain a perovskite precursor solution. 150 μL of the perovskite precursor solution was spin-coated onto a hole transport layer at 1000 rpm / s for 20 s, followed by spin-coating at 5000 rpm / s for 30 s. Ten seconds before the end of the spin-coating, 200 μL of chlorobenzene was rapidly added dropwise to regulate perovskite crystallization. After spin coating, the material was annealed at 150°C for 20 minutes to obtain a uniform, dense, smooth, and transparent perovskite light-absorbing layer (FA) with a thickness of 550 nm. 0.98 MA 0.02 ) 0.95 Cs 0.05 Pb(I 0.98 Br 0.02 3.

[0205] (4) Preparation of the upper passivation layer

[0206] Take 100 μL of the dispersion of passivation material (piperazine derivative of Preparation Example 1, concentration 1 mg / mL, solvent isopropanol), and spin-coat it dynamically at 6000 rpm / s for 20 s on the perovskite surface. After spin-coating, place it on a hot plate and anneal at 100 °C for 5 min, then allow it to cool naturally to room temperature to form an upper passivation layer with a thickness of approximately 5 nm.

[0207] (5) Fabrication of electron transport layer and hole blocking layer: The device was placed in an evaporation machine, and 30nm C electron transport layer and hole blocking layer were fabricated on the upper passivation layer. 60 It serves as an electron transport layer and a 5nm BCP as a hole blocking layer.

[0208] (6) Preparation of the second electrode:

[0209] A 140 nm thick layer of metallic copper (Cu) was deposited on the hole-blocking layer as the second electrode. Before deposition, a vacuum of 1.0 × 10⁻⁶ was first applied. -4 Pa, then pre-deposited for 5 minutes. During the deposition process, when the copper thickness is in the range of 0-20 nm, the Cu evaporation rate is approximately 0.1 A / s; when the copper thickness is in the range of 20 nm to 140 nm, the Cu evaporation rate is approximately 1 A / s.

[0210] The perovskite solar cell of Example 2 was prepared by the same method as that of Example 1, except that the piperazine derivative of Example 2 was used instead of the piperazine derivative of Example 1.

[0211] The perovskite solar cell of Example 3 was prepared by the same method as that of Example 1, except that the piperazine derivative of Example 3 was used instead of the piperazine derivative of Example 1.

[0212] The perovskite solar cell of Example 4 was prepared by the same method as that of Example 1, except that the piperazine derivative of Example 4 was used instead of the piperazine derivative of Example 1.

[0213] The perovskite solar cell of Example 5 was prepared by the same method as that of Example 1, except that the piperazine derivative of Example 5 was used instead of the piperazine derivative of Example 1.

[0214] The perovskite solar cell of Example 6 was prepared by the same method as that of Example 1, except that the piperazine derivative of Example 6 was used instead of the piperazine derivative of Example 1.

[0215] The perovskite solar cell in Example 7 was prepared using the same method as in Example 1, the main difference being that the piperazine derivative from Example 7 was used for perovskite bulk phase doping, and the passivation layer in step (4) was not prepared. Specifically, the perovskite layer in step (3) was prepared as follows:

[0216] 496.32 mg of formamidinium hydroiodate (FAI), 2.05 mg of methylammonium chloride (MAI), 4.87 mg of methylammonium bromide (MABr), 40.27 mg of cesium iodide (CsI), 25.69 mg of lead bromide (PbBr2), and 1396.86 mg of lead iodide (PbI2) were weighed and dissolved in 2 mL of a mixture of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (DMF to DMSO volume ratio of 4:1) to obtain a perovskite precursor solution. Then, the piperazine derivative of Preparation Example 7 was added. 150 μL of the perovskite precursor solution containing the piperazine derivative of Preparation Example 7 was spin-coated onto a hole transport layer at 1000 rpm / s for 20 s, followed by spin-coating at 5000 rpm / s for 30 s. Ten seconds before the end of spin coating, 200 μL of chlorobenzene was rapidly added dropwise to regulate perovskite crystallization. After spin coating, the perovskite was annealed at 150 °C for 20 min to obtain a uniform, dense, smooth, and transparent perovskite light-absorbing layer (FA) with a thickness of 550 nm. 0.98 MA 0.02 ) 0.95 Cs 0.05 Pb(I 0.98 Br 0.02 )3, wherein the doping amount of the piperazine derivative in Preparation Example 7 is 0.3% mmol in the molar percentage of the perovskite material.

[0217] The perovskite solar cell of Example 8 was prepared in the same way as that of Example 1, except that the perovskite bulk phase was doped with the piperazine derivative of Example 7 according to the method of Example 7, and the passivation layer in step (4) was prepared with the piperazine derivative of Example 6 according to Example 6.

[0218] The perovskite solar cell of Comparative Example 1 was prepared using the same method as in Example 1, except that no upper passivation layer was prepared.

[0219] The perovskite solar cell of Comparative Example 2 was prepared using the same method as in Example 1, the main difference being that compound PI was used instead of the piperazine derivative in Example 1. The structure of compound PI is as follows:

[0220]

[0221] Test example:

[0222] (1) Photoelectric performance testing

[0223] The photoelectric conversion efficiency (PCE) of the perovskite solar cells was tested at room temperature (25°C):

[0224] Using an AAA-grade solar simulator under standard test conditions: incident light power 100mW / cm² 2The photoelectric performance parameters of the tested battery were measured using a spectral energy of AM1.5G, and the P values ​​were obtained. out P in V mpp J mpp V oc J sc Then, calculate the PCE based on the following formula:

[0225] PCE = P out / P in ;

[0226] =V oc ×J sc ×[(V mpp ×J mpp ) / (V oc ×J sc )] / P in ;

[0227] =V oc ×J sc ×FF / P in ;

[0228] Among them, P in P out V mpp J mpp V oc J sc FF represent: incident light power, operating output power of the battery under test, voltage at the maximum power point of the battery under test, current at the maximum power point of the battery under test, open circuit voltage, short circuit current, and fill factor, respectively.

[0229] The test results are shown in Table 1 below:

[0230] Table 1

[0231]

[0232] A comparison between Examples 1-8 and Comparative Examples 1-2 shows that the present application can effectively improve the photoelectric conversion efficiency of perovskite solar cells by introducing a passivation material with a specific structure. Furthermore, a comparison between Example 1 and Example 7 shows that, compared to bulk doping, top passivation using this passivation material can achieve better photoelectric conversion efficiency.

[0233] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0234] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A perovskite solar cell, characterized in that, It includes a first electrode, a composite perovskite layer, and a second electrode; the composite perovskite layer is disposed between the first electrode and the second electrode; The composite perovskite layer comprises a perovskite material and a piperazine derivative, wherein the piperazine derivative comprises an anion and a cation, and the cation of the piperazine derivative has the structure shown in formula (1): R1 and R2 each independently include H or the structure shown in equation (1-1) or (1-2) below, and R1 and R2 are not both H at the same time: R3 includes a single bond, a C1-C6 alkylene group, or a C6-C10 arylene group; R4 includes -S-, -PH-, -NH-, -O-, or C6- to C10 arylene groups; R5 includes C1-C6 alkyl groups that are substituted or unsubstituted with oxyacid groups. R6 includes C1-C6 alkylene groups; Indicates the connection site.

2. The perovskite solar cell according to claim 1, characterized in that, The piperazine derivative has one or more of the following characteristics: (1) The anions of the piperazine derivatives include halide ions or pseudohalogen ions; (2) R4 includes -S- or C6~C10 arylene groups; (3) R6 includes C1 to C3 alkylene groups.

3. The perovskite solar cell according to claim 1 or 2, characterized in that, R1 and R2 each independently include H or the structure shown in equations (1-3), (1-4), or (1-5): n1, n2, and n4 are each independently 1, 2, or 3; n3 can be 0, 1, 2 or 3 independently; R 51 This includes C1-C3 alkyl groups, whether substituted or unsubstituted with oxyacid groups.

4. The perovskite solar cell according to any one of claims 1 to 3, characterized in that, The cation of the piperazine derivative has the following structure:

5. The perovskite solar cell according to any one of claims 1 to 4, characterized in that, The composite perovskite layer has one or two of the following characteristics: (1) In the composite perovskite layer, the piperazine derivative is doped into the perovskite material; (2) The composite perovskite layer includes a perovskite body layer and a passivation layer. The perovskite body layer includes the perovskite material, and the passivation layer includes the piperazine derivative.

6. The perovskite solar cell according to claim 5, characterized in that, The composite perovskite layer has one or two of the following characteristics: (1) The molar percentage of the piperazine derivative doped in the perovskite material is 0.1% to 2%; (2) The thickness of the passivation layer is 0.1 nm to 10 nm.

7. The perovskite solar cell according to claim 5 or 6, characterized in that, It includes a first electrode, a perovskite body layer, a passivation layer and a second electrode stacked in sequence, wherein the first electrode includes a transparent electrode.

8. A piperazine derivative, characterized in that, The piperazine derivative comprises anion and cation, and the cation of the piperazine derivative has the structure shown in formula (1): R1 and R2 each independently include H or the structure shown in equation (1-1) or (1-2) below, and R1 and R2 are not both H at the same time: R3 includes a single bond, a C1-C6 alkylene group, or a C6-C10 arylene group; R4 includes -S-, -PH-, -NH-, -O-, or C6- to C10 arylene groups; R5 includes C1-C6 alkyl groups that are substituted or unsubstituted with oxyacid groups. R6 includes C1-C6 alkylene groups; Indicates the connection site.

9. The piperazine derivative according to claim 8, characterized in that, The piperazine derivative has one or more of the following characteristics: (1) The anions of the piperazine derivatives include halide ions or pseudohalogen ions; (2) R1 and R2 each independently include H or the structure shown in equations (1-3), (1-4), or (1-5): n1, n2, and n4 are each independently 1, 2, or 3; n3 can be 0, 1, 2 or 3 independently; R 51 This includes C1-C3 alkyl groups, whether substituted or unsubstituted with oxyacid groups.

10. A photovoltaic module, characterized in that, Includes the perovskite solar cell according to any one of claims 1 to 7 or the piperazine derivative according to any one of claims 8 to 9.

11. An electrical appliance, characterized in that, It includes the perovskite solar cell according to any one of claims 1 to 7, the piperazine derivative according to any one of claims 8 to 9, or the photovoltaic module according to claim 10.

12. A power generation device, characterized in that, It includes the perovskite solar cell according to any one of claims 1 to 7, the piperazine derivative according to any one of claims 8 to 9, or the photovoltaic module according to claim 10.

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