A NOR memory operating voltage self-detecting circuit

Abstract

This invention discloses a self-detection circuit for the operating voltage of a NOR memory, relating to the field of NOR memory technology. It includes a memory module that regulates the DC power supplied to the power module and performs data storage and interaction. An operating voltage detection module detects the lowest voltage value of the regulated power supply based on a first and second voltage threshold, thus identifying the lowest operating voltage state of the memory module. A threshold control module, in conjunction with a third and fourth voltage threshold, selects the highest voltage value of the regulated power supply. A voltage comparison module then performs overvoltage or undervoltage detection on the memory module based on the voltage thresholds provided by the threshold control module and the operating voltage detection module. In the event of overvoltage or undervoltage, the module controls a safety protection module to cut off power. This self-detection circuit for the NOR memory improves the intelligence of voltage detection and enhances circuit safety.

Description

Technical Field

[0001] This invention relates to the field of NOR memory technology, specifically a self-detection circuit for the operating voltage of an NOR memory. Background Technology

[0002] NOR memory requires a specific operating voltage for programming and erasing operations. If the operating voltage is below or exceeds the safe threshold, it can easily lead to data write errors or damage to memory cells. Due to variations in NOR memory selection, the operating voltage may be either the common 3.3V or the mainstream 1.8V. When using a voltage detection circuit consisting of a comparator and a reference power supply, the reference power supply must be selected based on the NOR memory's operating voltage. This means that without knowing the NOR memory's operating voltage, proper voltage detection will fail, thus requiring improvement. Summary of the Invention

[0003] This invention provides a self-detection circuit for the operating voltage of a NOR memory to solve the problems mentioned in the background art.

[0004] According to an embodiment of the present invention, a self-detection circuit for the operating voltage of a NOR memory is provided, comprising: a power supply module, a safety protection module, a voltage comparison module, a threshold control module, an operating voltage detection module, and a memory module; The power module is used to connect to DC power. The safety protection module, connected to the power supply module, is used to transmit DC power. The working voltage detection module is connected to the power supply module and the memory module. It is used to receive DC power, detect the minimum voltage value of the regulated power output by the memory module, and when the regulated power is greater than the set first voltage threshold, it self-locks and outputs the first control signal. When the regulated power is greater than the set second voltage threshold, it self-locks and outputs the second control signal and stops outputting the first control signal. The threshold control module, connected to the working voltage detection module and the voltage comparison module, is used to provide the maximum voltage value of the regulated power and set the third voltage threshold and the fourth voltage threshold. When the first control signal is received, the first voltage threshold and the third voltage threshold are transmitted to the voltage comparison module. When the second control signal is received, the second voltage threshold and the fourth voltage threshold are transmitted to the voltage comparison module. The voltage comparison module, connected to the safety protection module and the memory module, is used to detect the voltage magnitude of DC power relative to the first voltage threshold and the third voltage threshold, or relative to the second voltage threshold and the fourth voltage threshold. When the DC power is less than the first voltage threshold or the second voltage threshold, the DC power is in an undervoltage state. When the DC power is greater than the third voltage threshold or the fourth voltage threshold, the DC power is in an overvoltage state. In the case of overvoltage or undervoltage, the safety protection module is controlled to stop transmitting DC power. The memory module, connected to the safety protection module, is used to regulate and output regulated DC power, store data, and control the NOR memory and microcontroller to perform data interaction.

[0005] As a further embodiment of the present invention: the power supply module includes a power interface and a first capacitor; the working voltage detection module includes a first resistor, a second resistor, a first switching transistor, a first logic device, a first diode, a second logic device, and a second diode; Preferably, the first end of the power interface is connected to one end of the first resistor and one end of the second resistor, and is connected to the second end of the power interface, the emitter of the first switching transistor and the ground terminal through the first capacitor. The other end of the first resistor is connected to the B terminal of the second logic device and the collector of the first switching transistor. The base of the first switching transistor is connected to the anode of the first diode and the Y terminal of the first logic device. The A terminal of the first logic device is connected to the second end of the second resistor. The B terminal of the first logic device is connected to the cathode of the first diode. The A terminal of the second logic device is connected to the cathode of the second diode. The anode of the second diode is connected to the Y terminal of the second logic device.

[0006] As a further embodiment of the present invention: the working voltage detection module further includes a first comparator, a second comparator, a first reference power supply, a second reference power supply, a fourth resistor, and a fifth resistor; Preferably, the non-inverting input of the first comparator is connected to the non-inverting input of the second comparator, the inverter of the first comparator is connected to the first reference power supply through the fourth resistor, the inverter of the second comparator is connected to the second reference power supply through the fifth resistor, and the outputs of the first and second comparators are respectively connected to the B terminal of the first logic device and the A terminal of the second logic device.

[0007] As a further embodiment of the present invention: the memory module includes a voltage regulator, a second capacitor, a third resistor, a first memory, and a microcontroller. Preferably, the input terminal of the voltage regulator is connected to the safety protection module, and the output terminal of the voltage regulator is connected to one end of the second capacitor, the third, seventh and eighth terminals of the first memory, and the first terminal of the first memory and the first I / O terminal of the microcontroller device through the third resistor. The other end of the second capacitor is connected to the ground terminal of the voltage regulator, the ground terminal of the microcontroller device, the second terminal of the power interface and the fourth terminal of the first memory. The sixth, fifth and second terminals of the first memory are respectively connected to the second I / O terminal, the third I / O terminal and the fourth I / O terminal of the microcontroller device.

[0008] As a further embodiment of the present invention: the threshold control module includes a first analog switch, a second analog switch, a third reference power supply, and a fourth reference power supply; Preferably, the third and eighth terminals of the first analog switch are connected to the inverting terminals of the first and second comparators, respectively; the fourth terminal of the first analog switch is connected to the ninth terminal of the first analog switch; the sixth terminal of the first analog switch is connected to the sixth terminal of the second analog switch and the Y terminal of the second logic device; the fifth terminal of the first analog switch is connected to the fifth terminal of the second analog switch and the Y terminal of the first logic device; the fourth terminal of the second analog switch is connected to the ninth terminal of the second analog switch; and the third and eighth terminals of the second analog switch are connected to the third and fourth reference power supplies, respectively.

[0009] As a further embodiment of the present invention: the voltage comparison module includes a third comparator and a fourth comparator; Preferably, the non-inverting input of the third comparator and the inverting input of the fourth comparator are respectively connected to the fourth terminal of the first analog switch and the fourth terminal of the second analog switch. The inverting input of the third comparator and the non-inverting input of the fourth comparator are both connected to the output terminal of the voltage regulator. The output terminals of the third comparator and the fourth comparator are connected to the safety protection module.

[0010] As a further embodiment of the present invention: the safety protection module includes a first power transistor, a sixth resistor, a third diode, and a fourth diode; Preferably, the source of the first power transistor is connected to the first terminal of the power interface, the drain of the first power transistor is connected to the input terminal of the voltage regulator, the gate of the first power transistor is connected to the cathode of the third diode and the cathode of the fourth diode and is connected to the second terminal of the power interface and the ground terminal of the voltage regulator through the sixth resistor, and the anode of the third diode and the anode of the fourth diode are respectively connected to the output terminal of the third comparator and the output terminal of the fourth comparator.

[0011] Compared with the prior art, the beneficial effects of the present invention are as follows: The NOR memory operating voltage self-detection circuit of the present invention can perform voltage regulation of the DC power supplied by the power supply module and perform data storage and data interaction. The operating voltage detection module detects the lowest voltage value of the regulated power supply according to the set first voltage threshold and second voltage threshold, so as to detect the lowest operating voltage state of the memory module. In conjunction with the third voltage threshold and fourth voltage threshold provided by the threshold control module, the highest voltage value of the regulated power supply is selected. So that the voltage comparison module can perform overvoltage or undervoltage detection of the memory module according to the voltage thresholds provided by the threshold control module and the operating voltage detection module, thereby improving the intelligence of voltage detection. In the event of overvoltage or undervoltage, the safety protection module is controlled to cut off the power, thus providing circuit safety. Attached Figure Description

[0012] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1 A schematic block diagram of a self-detection circuit for the operating voltage of a NOR memory provided in an embodiment of the present invention; Figure 2 A circuit diagram of a self-detection circuit for the operating voltage of a NOR memory provided in an embodiment of the present invention; Figure 3 The circuit diagram of the safety protection module provided in the embodiment of the present invention. Detailed Implementation

[0014] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0015] In one embodiment, see Figure 1 A self-detection circuit for the operating voltage of a NOR memory includes: a power supply module 1, a safety protection module 2, a voltage comparison module 3, a threshold control module 4, an operating voltage detection module 5, and a memory module 6. Specifically, power module 1 is used to connect to DC power; Safety protection module 2, connected to power module 1, is used to transmit DC power; The working voltage detection module 5 is connected to the power supply module 1 and the memory module 6. It is used to receive DC power, detect the minimum voltage value of the regulated power output by the memory module 6, and when the regulated power is greater than the set first voltage threshold, it self-locks and outputs the first control signal. When the regulated power is greater than the set second voltage threshold, it self-locks and outputs the second control signal and stops outputting the first control signal. The threshold control module 4 is connected to the working voltage detection module 5 and the voltage comparison module 3. It is used to provide the maximum voltage value of the regulated power and set the third voltage threshold and the fourth voltage threshold. When the first control signal is received, the first voltage threshold and the third voltage threshold are transmitted to the voltage comparison module 3. When the second control signal is received, the second voltage threshold and the fourth voltage threshold are transmitted to the voltage comparison module 3. The voltage comparison module 3, connected to the safety protection module 2 and the memory module 6, is used to detect the voltage magnitude of DC power relative to the first voltage threshold and the third voltage threshold, or relative to the second voltage threshold and the fourth voltage threshold. When the DC power is less than the first voltage threshold or the second voltage threshold, the DC power is in an undervoltage state. When the DC power is greater than the third voltage threshold or the fourth voltage threshold, the DC power is in an overvoltage state. In the case of overvoltage or undervoltage, the safety protection module 2 is controlled to stop transmitting DC power. The memory module 6, connected to the safety protection module 2, is used to regulate and output regulated DC power, store data, and control the NOR memory and the microcontroller to perform data interaction.

[0016] In a specific embodiment, the power supply module 1 can be a power circuit composed of a power interface and a capacitor, which can receive DC power and perform filtering; the safety protection module 2 can be a safety protection circuit composed of a field-effect transistor, a resistor, and a diode, which can control the power transmission state and perform power-off protection control; the voltage comparison module 3 can be a voltage comparison circuit composed of a comparator, which compares the input signal voltage and performs overvoltage or undervoltage judgment; the threshold control module 4 can be a threshold control circuit composed of an analog switch and a reference power supply, which can provide the transmission state of the third voltage threshold, the fourth voltage threshold, and the control voltage threshold, wherein the third voltage threshold is less than the fourth voltage threshold, the third threshold is used to select the power output after the regulated power of the memory module 6, that is, the overvoltage threshold when the regulated power is 1.8V, and the fourth voltage threshold is selected... The overvoltage threshold is set when the regulated power is 3.3V. The working voltage detection module 5 can be a working voltage detection circuit composed of logic units, transistors, comparators, reference power supplies, etc. It can set a first voltage threshold and a second voltage threshold. The first voltage threshold is less than the second voltage threshold. The second voltage threshold is selected as the lowest voltage value when the regulated power is 1.8V, and the first voltage threshold is selected as the lowest voltage value when the regulated power is 3.3V. Based on the magnitude of the DC power and the voltage of the first and second voltage thresholds, it is determined whether the regulated power is 3.3V or 1.8V. The memory module 6 can be a memory circuit composed of a voltage regulator, NOR memory, microcontroller, etc. It can perform voltage regulation processing on the input power and output regulated power. The NOR memory stores the data and interacts with the microcontroller.

[0017] In this embodiment, please refer to Figure 2 and Figure 3 The power module 1 includes a power interface and a first capacitor C1; the working voltage detection module 5 includes a first resistor R1, a second resistor R2, a first switching transistor V1, a first logic device J1, a first diode D1, a second logic device J2, and a second diode D2. Specifically, the first end of the power interface is connected to one end of the first resistor R1 and one end of the second resistor R2, and is connected to the second end of the power interface, the emitter of the first switching transistor V1 and the ground through the first capacitor C1. The other end of the first resistor R1 is connected to the B end of the second logic device J2 and the collector of the first switching transistor V1. The base of the first switching transistor V1 is connected to the anode of the first diode D1 and the Y end of the first logic device J1. The A end of the first logic device J1 is connected to the second end of the second resistor R2. The B end of the first logic device J1 is connected to the cathode of the first diode D1. The A end of the second logic device J2 is connected to the cathode of the second diode D2. The anode of the second diode D2 is connected to the Y end of the second logic device J2.

[0018] In a specific embodiment, the first switching transistor V1 can be an NPN transistor; the first logic device J1 and the second logic device J2 can both be AND gates.

[0019] Furthermore, the working voltage detection module 5 also includes a first comparator A1, a second comparator A2, a first reference power supply VF1, a second reference power supply VF2, a fourth resistor R4, and a fifth resistor R5; Specifically, the non-inverting input of the first comparator A1 is connected to the non-inverting input of the second comparator A2, the inverter of the first comparator A1 is connected to the first reference power supply VF1 through the fourth resistor R4, the inverter of the second comparator A2 is connected to the second reference power supply VF2 through the fifth resistor R5, and the output terminals of the first comparator A1 and the second comparator A2 are respectively connected to the B terminal of the first logic device J1 and the A terminal of the second logic device J2.

[0020] In a specific embodiment, both the first comparator A1 and the second comparator A2 can be selected as LM358 comparators; the first reference power supply VF1, together with the fourth resistor R4, provides a first voltage threshold; and the second reference power supply VF2, together with the fifth resistor R5, provides a second voltage threshold.

[0021] Furthermore, the memory module 6 includes a voltage regulator, a second capacitor C2, a third resistor R3, a first memory, and a microcontroller. Specifically, the input terminal of the voltage regulator is connected to the safety protection module 2, and the output terminal of the voltage regulator is connected to one end of the second capacitor C2, the third, seventh and eighth terminals of the first memory, and the first terminal of the first memory and the first I / O terminal of the microcontroller device through the third resistor R3. The other end of the second capacitor C2 is connected to the ground terminal of the voltage regulator, the ground terminal of the microcontroller device, the second terminal of the power interface and the fourth terminal of the first memory. The sixth, fifth and second terminals of the first memory are respectively connected to the second I / O terminal, the third I / O terminal and the fourth I / O terminal of the microcontroller device.

[0022] In a specific embodiment, the voltage regulator can be composed of a DC-DC regulator, which can provide a voltage of 3.3V or 1.8V; the first memory can be a NOR memory; and the microcontroller can be an STM32 microcontroller.

[0023] Furthermore, the threshold control module 4 includes a first analog switch IC1, a second analog switch IC2, a third reference power supply VF3, and a fourth reference power supply VF4; Specifically, the third and eighth terminals of the first analog switch IC1 are connected to the inverting terminals of the first comparator A1 and the second comparator A2, respectively. The fourth terminal of the first analog switch IC1 is connected to the ninth terminal of the first analog switch IC1. The sixth terminal of the first analog switch IC1 is connected to the sixth terminal of the second analog switch IC2 and the Y terminal of the second logic device J2. The fifth terminal of the first analog switch IC1 is connected to the fifth terminal of the second analog switch IC2 and the Y terminal of the first logic device J1. The fourth terminal of the second analog switch IC2 is connected to the ninth terminal of the second analog switch IC2. The third and eighth terminals of the second analog switch IC2 are connected to the third reference power supply VF3 and the fourth reference power supply VF4, respectively.

[0024] In a specific embodiment, both the first analog switch IC1 and the second analog switch IC2 can be CD4066; the third reference power supply VF3 and the fourth reference power supply VF4 can provide the third voltage threshold and the fourth voltage threshold, respectively.

[0025] Furthermore, the voltage comparison module 3 includes a third comparator A3 and a fourth comparator A4; Specifically, the non-inverting input of the third comparator A3 and the inverting input of the fourth comparator A4 are respectively connected to the fourth terminal of the first analog switch IC1 and the fourth terminal of the second analog switch IC2. The inverting input of the third comparator A3 and the non-inverting input of the fourth comparator A4 are both connected to the output terminal of the voltage regulator. The output terminals of the third comparator A3 and the fourth comparator A4 are connected to the safety protection module 2.

[0026] In a specific embodiment, both the third comparator A3 and the fourth comparator A4 can be selected from LM358 comparators.

[0027] Furthermore, the safety protection module 2 includes a first power transistor Q1, a sixth resistor R6, a third diode D3, and a fourth diode D4; Specifically, the source of the first power transistor Q1 is connected to the first terminal of the power interface, the drain of the first power transistor Q1 is connected to the input terminal of the voltage regulator, the gate of the first power transistor Q1 is connected to the cathode of the third diode D3 and the cathode of the fourth diode D4 and is connected to the second terminal of the power interface and the ground terminal of the voltage regulator through the sixth resistor R6, and the anode of the third diode D3 and the anode of the fourth diode D4 are respectively connected to the output terminal of the third comparator A3 and the output terminal of the fourth comparator A4.

[0028] In a specific embodiment, the first power transistor Q1 can be a P-channel MOSFET.

[0029] In this embodiment, a self-detection circuit for the operating voltage of a NOR memory is provided. DC power is supplied via a power interface. A first power transistor Q1 transmits power, and a voltage regulator performs voltage regulation and outputs regulated power to supply the first memory, enabling it to store data and interact with the microcontroller. A first comparator A1 compares the voltage with a first voltage threshold provided by a fourth resistor R4 and a first reference power supply VF1. A second comparator A2 compares the voltage with a second voltage threshold provided by a fifth resistor R5 and a second reference power supply VF2. When the regulated power is 1.8V, the second comparator A2 outputs a high level. The second logic unit J2 performs a high-level self-locking process with a first resistor R1 and a second diode D2, and outputs a first control signal. This turns on the eighth and ninth terminals of the first analog switch IC1 and the second analog switch IC2, allowing the second voltage threshold to be transmitted to the non-inverting input of the third comparator A3. The third voltage threshold provided by VF3 is transmitted to the inverting input of the fourth comparator A4, so that the third comparator A3 and the fourth comparator A4 can perform undervoltage and overvoltage detection on the 1.8V regulated power. When undervoltage occurs, the third comparator A3 outputs a high level; when overvoltage occurs, the third comparator A3 outputs a high level, controlling the first power transistor Q1 to turn off, thereby performing power-off protection. Similarly, when the regulated power is 3.3V, the first comparator A1 outputs a high level, and the first logic unit J1, together with the first diode D1 and the second resistor R2, performs high-level self-locking, controlling the first switch V1 to turn on, and the third and fourth terminals of the first analog switch IC1 and the second analog switch IC2 to turn on. This allows the third comparator A3 and the fourth comparator A4 to perform undervoltage and overvoltage detection respectively with the first voltage threshold set by the first reference power supply VF1 and the fourth voltage threshold provided by the fourth reference power supply VF4, and control the first power transistor Q1 to turn off when there is overvoltage or undervoltage.

[0030] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0031] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A self-detection circuit for the operating voltage of a NOR memory, characterized in that, The circuit includes: a power supply module, a safety protection module, a voltage comparison module, a threshold control module, a working voltage detection module, and a memory module; The power module is used to connect to DC power. The safety protection module, connected to the power supply module, is used to transmit DC power. The working voltage detection module is connected to the power supply module and the memory module. It is used to receive DC power, detect the minimum voltage value of the regulated power output by the memory module, and when the regulated power is greater than the set first voltage threshold, it self-locks and outputs the first control signal. When the regulated power is greater than the set second voltage threshold, it self-locks and outputs the second control signal and stops outputting the first control signal. The threshold control module, connected to the working voltage detection module and the voltage comparison module, is used to provide the maximum voltage value of the regulated power and set the third voltage threshold and the fourth voltage threshold. When the first control signal is received, the first voltage threshold and the third voltage threshold are transmitted to the voltage comparison module. When the second control signal is received, the second voltage threshold and the fourth voltage threshold are transmitted to the voltage comparison module. The voltage comparison module, connected to the safety protection module and the memory module, is used to detect the voltage magnitude of DC power relative to the first voltage threshold and the third voltage threshold, or relative to the second voltage threshold and the fourth voltage threshold. When the DC power is less than the first voltage threshold or the second voltage threshold, the DC power is in an undervoltage state. When the DC power is greater than the third voltage threshold or the fourth voltage threshold, the DC power is in an overvoltage state. In the case of overvoltage or undervoltage, the safety protection module is controlled to stop transmitting DC power. The memory module, connected to the safety protection module, is used to regulate and output regulated DC power, store data, and control the NOR memory and microcontroller to perform data interaction.

2. The NOR memory operating voltage self-detection circuit according to claim 1, characterized in that, The power module includes a power interface and a first capacitor; the working voltage detection module includes a first resistor, a second resistor, a first switching transistor, a first logic device, a first diode, a second logic device, and a second diode; The first end of the power interface is connected to one end of the first resistor and one end of the second resistor, and is connected to the second end of the power interface, the emitter of the first switching transistor and the ground terminal through the first capacitor. The other end of the first resistor is connected to the B terminal of the second logic device and the collector of the first switching transistor. The base of the first switching transistor is connected to the anode of the first diode and the Y terminal of the first logic device. The A terminal of the first logic device is connected to the second end of the second resistor. The B terminal of the first logic device is connected to the cathode of the first diode. The A terminal of the second logic device is connected to the cathode of the second diode. The anode of the second diode is connected to the Y terminal of the second logic device.

3. The NOR memory operating voltage self-detection circuit according to claim 2, characterized in that, The operating voltage detection module further includes a first comparator, a second comparator, a first reference power supply, a second reference power supply, a fourth resistor, and a fifth resistor; The non-inverting input of the first comparator is connected to the non-inverting input of the second comparator. The inverter of the first comparator is connected to the first reference power supply through the fourth resistor. The inverter of the second comparator is connected to the second reference power supply through the fifth resistor. The outputs of the first and second comparators are respectively connected to the B terminal of the first logic device and the A terminal of the second logic device.

4. The NOR memory operating voltage self-detection circuit according to claim 3, characterized in that, The memory module includes a voltage regulator, a second capacitor, a third resistor, a first memory, and a microcontroller. The input terminal of the voltage regulator is connected to the safety protection module. The output terminal of the voltage regulator is connected to one end of the second capacitor, the third, seventh and eighth terminals of the first memory, and the first terminal of the first memory and the first I / O terminal of the microcontroller device through the third resistor. The other end of the second capacitor is connected to the ground terminal of the voltage regulator, the ground terminal of the microcontroller device, the second terminal of the power interface and the fourth terminal of the first memory. The sixth, fifth and second terminals of the first memory are respectively connected to the second I / O terminal, the third I / O terminal and the fourth I / O terminal of the microcontroller device.

5. The NOR memory operating voltage self-detection circuit according to claim 4, characterized in that, The threshold control module includes a first analog switch, a second analog switch, a third reference power supply, and a fourth reference power supply; The third and eighth terminals of the first analog switch are connected to the inverting terminals of the first and second comparators, respectively. The fourth terminal of the first analog switch is connected to the ninth terminal of the first analog switch. The sixth terminal of the first analog switch is connected to the sixth terminal of the second analog switch and the Y terminal of the second logic device. The fifth terminal of the first analog switch is connected to the fifth terminal of the second analog switch and the Y terminal of the first logic device. The fourth terminal of the second analog switch is connected to the ninth terminal of the second analog switch. The third and eighth terminals of the second analog switch are connected to the third and fourth reference power supplies, respectively.

6. The NOR memory operating voltage self-detection circuit according to claim 5, characterized in that, The voltage comparison module includes a third comparator and a fourth comparator; The non-inverting input of the third comparator and the inverting input of the fourth comparator are respectively connected to the fourth terminal of the first analog switch and the fourth terminal of the second analog switch. The inverting input of the third comparator and the non-inverting input of the fourth comparator are both connected to the output terminal of the voltage regulator. The output terminals of the third comparator and the fourth comparator are connected to the safety protection module.

7. The NOR memory operating voltage self-detection circuit according to claim 6, characterized in that, The safety protection module includes a first power transistor, a sixth resistor, a third diode, and a fourth diode; The source of the first power transistor is connected to the first terminal of the power interface, the drain of the first power transistor is connected to the input terminal of the voltage regulator, the gate of the first power transistor is connected to the cathode of the third diode and the cathode of the fourth diode and is connected to the second terminal of the power interface and the ground terminal of the voltage regulator through the sixth resistor, and the anode of the third diode and the anode of the fourth diode are respectively connected to the output terminal of the third comparator and the output terminal of the fourth comparator.

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