Plasma parameter regulation system, method, apparatus, and medium

Abstract

This application relates to the fields of plasma applications and automation technology. It discloses a plasma parameter control system, method, equipment, and medium. The system includes: plasma, a plasma parameter acquisition device, a control module, and a modular power supply. The modular power supply and the plasma are electrically connected. The plasma parameter acquisition device is used to acquire plasma load state parameters. The plasma parameter acquisition device and the control module are electrically connected. The control module and the modular power supply are electrically connected. The control module is used to adjust the number of power supply modules in the modular power supply based on the plasma load state parameters fed back by the plasma parameter acquisition device. This application enables real-time control of the number of power supply modules in the modular power supply, achieving dynamic adjustment of the power supply during plasma operation, ensuring that the plasma load state continuously meets the process target requirements.

Description

Technical Field

[0001] This application relates to the fields of plasma applications and automation technology, and more specifically, to a plasma parameter control system, method, device, and medium. Background Technology

[0002] With the rapid development of high-end equipment manufacturing industries such as power, aerospace, and biomedicine, the requirements for the surface properties of key components (such as insulation, hydrophobicity, wear resistance, and biocompatibility) are becoming increasingly stringent. Plasma surface modification technology, with its advantages of high efficiency, environmental friendliness, and uniform processing, has become one of the key technologies for improving the surface properties of materials. Especially in the field of high-voltage power external insulation, the use of plasma treatment technology to repair or functionalize the surface of silicone rubber composite insulators to restore or enhance their anti-pollution flashover capabilities demonstrates enormous application potential.

[0003] However, moving plasma technology from the laboratory to large-scale, stable industrial applications, especially when dealing with complex working conditions and diverse materials, still faces severe challenges. The root cause lies in the insufficient controllability, adaptability, and long-term effectiveness of existing plasma processing technologies. In actual industrial applications, the core process parameters of plasma, such as electron density and electron temperature, are not only affected by the power supply output current, but also by various factors such as gas composition, gas pressure, ambient temperature, and cavity load. They exhibit significant nonlinearity and time-varying characteristics. Even if the power supply output parameters are completely stable, the plasma process parameters may still fluctuate significantly, making it impossible to guarantee batch consistency and effect stability of processes such as surface modification and material treatment.

[0004] Existing technologies mostly employ fixed-parameter plasma excitation sources for one-time material treatment, failing to dynamically adjust based on the plasma state during the process. Furthermore, once the circuitry of traditional modular power supplies is determined, the adjustment range of their output voltage and current is strictly limited, unable to flexibly adapt to the dynamic changes in the plasma load. In processes such as plasma material processing, specific process objectives require matching specific electron temperature and plasma density ranges. Existing technologies cannot achieve direct closed-loop control centered on process objectives, relying instead on repeated adjustments of power supply parameters based on operator experience, resulting in poor process controllability and low batch consistency. Consequently, the modified layer formed on the treated surface is often shallow or has weak adhesion, leading to rapid performance degradation under complex outdoor electro-thermal-mechanical-climatic stress, failing to meet the requirements for long-term equipment operation.

[0005] Therefore, developing a power supply system and its control method that can output flexible parameters that can be precisely adjusted online and can dynamically adjust the series relationship of modules according to process objectives has become the key to overcoming the obstacles to the engineering application of plasma technology. Summary of the Invention

[0006] In view of the above situation, embodiments of this application provide a plasma parameter control system, method, device and medium, which aim to solve the above problems or at least partially solve the above problems.

[0007] In a first aspect, this application provides a plasma parameter control system, comprising: Plasma, plasma parameter acquisition device, control module and modular power supply; The modular power supply and the plasma are electrically connected. The plasma parameter acquisition device is used to acquire plasma load state parameters. The plasma parameter acquisition device and the control module are electrically connected. The control module and the modular power supply are electrically connected. The control module is used to adjust the number of power supply modules in the modular power supply according to the plasma load state parameters fed back by the plasma parameter acquisition device.

[0008] For example, the modular power supply includes multiple power modules, which are connected in series in a switchable manner. Each power module is electrically connected to the control module and the plasma respectively.

[0009] For example, the power module includes a capacitor, a switching transistor, and a transformer; The positive terminal of the capacitor is connected to the switching transistor, the switching transistor is connected to the control terminal of the control module, the input terminal of the primary coil of the transformer is connected to the negative terminal of the capacitor, the output terminal of the primary coil of the transformer is electrically connected to the switching transistor, and the output terminal of the primary coil of the transformer is grounded. The secondary coil of the transformer is magnetically connected to the primary coil of the transformer, and the secondary coil of the transformer is electrically connected to the plasma. Each power module corresponds to a secondary coil of the transformer, and the secondary coils of multiple transformers are connected in series.

[0010] For example, the control module includes an analog-to-digital converter, an FPGA module, and a switching signal driver; The analog-to-digital converter and the plasma parameter acquisition device are electrically connected, the FPGA module and the analog-to-digital converter are electrically connected, the FPGA module and the switch signal driver are electrically connected, and the switch signal driver and the modular power supply are electrically connected.

[0011] For example, the control module includes a parameter setting module and a power control module; The parameter setting module and the power control module are electrically connected, and the power control module and the modular power supply are electrically connected. The parameter setting module is used to determine process parameters, and the power control module is used to generate a power control signal based on the process parameters and control the number of power modules and the running time in the modular power supply based on the power control signal.

[0012] Secondly, this application provides a plasma parameter control method, employing the plasma parameter control system as described in the first aspect, the method comprising: Obtain plasma load state parameters; Based on a pre-set load state threshold, the load state parameters of the plasma are compared with the load state threshold, and the number of power modules is adjusted according to the comparison result.

[0013] For example, before obtaining the plasma load state parameters, the method further includes: Obtain process parameters; A power control signal is generated based on the process parameters; The number of power modules and their operating time are controlled according to the power regulation signal.

[0014] For example, the plasma load state parameters include plasma electron density or plasma electron temperature.

[0015] Thirdly, this application provides a computer device including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the plasma parameter control method as described in the second aspect.

[0016] Fourthly, this application provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the plasma parameter control method as described in the second aspect.

[0017] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects: This application acquires plasma load state parameters in real time through a plasma parameter acquisition device, and adjusts the number of power modules in the modular power supply in real time based on the plasma load state parameters fed back by the plasma parameter acquisition device. This enables dynamic adjustment of the power supply during plasma operation, ensuring that the plasma load state continuously meets the process target requirements. Attached Figure Description

[0018] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings: Figure 1 This is a schematic diagram of a plasma parameter control system according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the circuit structure of a modular power supply in a plasma parameter control system according to an embodiment of the present invention; Figure 3 This is a schematic diagram of the voltage waveform corresponding to the target series combination in one embodiment of the present invention; Figure 4 This is a schematic diagram of the output waveforms of a modular power supply under different series combinations in one embodiment of the present invention; Figure 5 This is a schematic flowchart of a plasma parameter control method according to an embodiment of the present invention; Figure 6 This is a schematic diagram of the structure of a computer device according to an embodiment of the present invention; Figure 7 This is another structural schematic diagram of a computer device according to one embodiment of the present invention. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0020] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such use can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the term "comprising" and its variations should be interpreted as open-ended terms meaning "including but not limited to."

[0021] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0022] As mentioned earlier, in current engineering applications of plasma technology, the power supply output is fixed, parameters cannot be precisely adjusted online, and the module series relationship cannot be dynamically adjusted according to process objectives. To solve this technical problem, embodiments of this application provide a plasma parameter control system and method.

[0023] like Figure 1 As shown, a plasma parameter control system includes: a plasma 101, a plasma parameter acquisition device 102, a control module 103, and a modular power supply 104; the modular power supply 104 is electrically connected to the plasma 101, the plasma parameter acquisition device 102 is used to acquire plasma load state parameters, the plasma parameter acquisition device 102 is electrically connected to the control module 103, the control module 103 is electrically connected to the modular power supply 104, and the control module 103 is used to adjust the number of power supply modules in the power supply according to the plasma load state parameters fed back by the plasma parameter acquisition device 102.

[0024] This application uses a plasma parameter acquisition device 102 to collect plasma load state parameters in real time. Based on the plasma load state parameters fed back by the plasma parameter acquisition device 102, the number of power supply modules in the real-time adjustment module 103 is adjusted, thereby realizing dynamic adjustment of the power supply during the operation of plasma 101, ensuring that the load state of plasma 101 continuously meets the process target requirements. Plasma 101 is a load that changes with its operating conditions; by dynamically adjusting the number of power supply modules, online precise adjustment of the plasma load state parameters is achieved.

[0025] In one embodiment, the modular power supply 104 includes multiple power modules connected in series and switchable; each power module is electrically connected to the control module 103 and the plasma 101, respectively. Figure 1 As shown, in this application, power modules 1 to n can all be independently controlled and formed into different series combinations to achieve different discharge voltages and discharge currents, thereby achieving different plasma load state parameters control, thus enabling the construction of power systems that meet different application requirements.

[0026] In one embodiment, such as Figure 2 As shown, the power supply module includes a capacitor, a switching transistor, and a transformer PT. The positive terminal of the capacitor is connected to the switching transistor, the switching transistor is connected to the control terminal Q of the control module 103, the input terminal of the primary coil of the transformer is connected to the negative terminal of the capacitor, the output terminal of the primary coil of the transformer is electrically connected to the switching transistor, and the output terminal of the primary coil of the transformer is grounded. The secondary coil of the transformer is magnetically connected to the primary coil of the transformer, and the secondary coil of the transformer is electrically connected to the plasma 101. One power supply module corresponds to one secondary coil of the transformer, and multiple secondary coils of transformers are connected in series.

[0027] In one embodiment, an external power supply V charges the capacitor, storing electrical energy in it. After the control terminal Q of the regulation module 103 provides a power regulation signal, the switching transistor turns on, and the capacitor discharges through the primary coil of the transformer PT with a step-up ratio of 1:1, converting the stored electrical energy into magnetic energy. The magnetic energy of the transformer is transferred through the secondary coil and output to the plasma 101, exciting gas ionization.

[0028] In one embodiment, such as Figure 2 As shown, since each power module corresponds to a transformer secondary coil, and the secondary coils of multiple transformers in multiple power modules are connected in series, when a power module does not receive a power control signal, the switching transistor of that power module is turned off, the capacitor cannot discharge, and this power module is in standby mode and will not output power, but it will not affect other power modules.

[0029] This application achieves independent control of the power modules by independently setting the primary coils of the multiple transformers in multiple power modules and connecting the secondary coils of the multiple transformers in multiple power modules in series, thus enabling different series connection methods for the power modules. Figure 2 The red lines in the diagram represent the discharge path.

[0030] In one embodiment, such as Figure 1 As shown, the control module 103 includes an analog-to-digital converter, an FPGA module, and a switch signal driver. The analog-to-digital converter is electrically connected to the plasma parameter acquisition device 102, the FPGA module is electrically connected to the analog-to-digital converter, the FPGA module is electrically connected to the switch signal driver, and the switch signal driver is electrically connected to the modular power supply 104.

[0031] Specifically, such as Figure 1 and Figure 2 As shown, the output of the plasma parameter acquisition device 102 is connected to the input of the FPGA module via an analog-to-digital converter. The output of the FPGA module is connected to the control terminal Q of the modular power supply 104 via a switch signal driver. The output voltage of the modular power supply 104 is connected to the plasma 101 for excitation. The switch signal driver is connected to each power module in the modular power supply 104, and the number of power modules connected in series is determined by the switching signal. The switch signal driver can synchronously control the working state (off or on) of each power module, ensuring coordinated switching between power modules and avoiding control conflicts.

[0032] Specifically, the FPGA module processes the acquisition signals from the analog-to-digital converter (ADC) and outputs switch drive signals. The ADC processes the analog signals of the plasma load state parameters and performs analog-to-digital conversion. The switch signal driver receives control signals from the FPGA module to implement the series switching operation of the power supply modules. The modular power supply 104 must have a modular structure, with each power supply module capable of independent operation and supporting dynamic switching between different series connection methods.

[0033] Specifically, the plasma parameter acquisition device 102 needs to meet the requirements for acquiring the load state of plasma 101, and select a suitable analog-to-digital converter according to the actual application scenario to ensure the accuracy of the acquired signal and provide a reliable basis for the precise adjustment of the series relationship.

[0034] Specifically, the analog-to-digital converter (ADC) selects a resolution with sufficient bits, applies the resolution calculation formula, and obtains the accuracy of the acquired signal. The ADC resolution V 分辨率 The calculation formula is: ,in, n The number of bits in the analog-to-digital converter. n ≥8; Vout is the output voltage range of the plasma parameter acquisition device 102.

[0035] Specifically, the FPGA module pre-stores the load state thresholds corresponding to the target process parameters of plasma 101, as well as the power module series connection modes corresponding to different process parameter ranges. The target process parameters of plasma 101 are the characteristic state parameters of plasma 101 itself, rather than the output electrical parameters of the modular power supply 104.

[0036] In one embodiment, the control module 103 includes a parameter setting module and a power control module 103; the parameter setting module and the power control module 103 are electrically connected, and the power control module 103 is electrically connected to the modular power supply 104; the parameter setting module is used to determine the process curve, and the power control module 103 is used to generate a power control signal according to the process curve and control the number of power modules and the running time in the modular power supply 104 according to the power control signal.

[0037] Specifically, the FPGA module in the control module 103 includes a parameter setting module and a power control module. The parameter setting module also sets load state thresholds and power module series connection modes. The parameter setting module can also set process parameters according to user needs; these parameters can be set directly or indirectly through process curves. The power control module generates power control signals based on the process parameters, or it generates power control signals based on the process parameters and the power module series connection modes. These power control signals are used to control the number and operating time of power modules in the modular power supply 104. The power module series connection modes include multiple series combinations. Based on the process parameters, a target series combination is determined from these combinations, and the number and operating time of power modules in the modular power supply 104 are controlled according to the target series combination. The series combination includes the number of trigger power modules. The target series combination includes at least one series combination. When multiple series combinations exist, the power control module also controls the trigger time and trigger duration of different series combinations.

[0038] Specifically, the process parameters include voltage, current, etc.

[0039] Specifically, the power modules in the modular power supply 104 are one of three types: DC modules, AC modules, and pulse modules. When the power regulation module analyzes the process curves to determine the target series combination from multiple series combinations, it also needs to consider the module type of the power supply. The load state threshold and power supply module series mode in the parameter setting module are set according to the module type of the power supply to ensure the stability and safety of the switching process.

[0040] For example, modular power supply 104 includes 25 power modules. These power modules are pulse modules. Based on process parameters, the target series combination is determined from multiple series combinations to be three: 20 power modules in series, 5 power modules in series, and another 5 power modules operating in series. The voltage waveform corresponding to the target series combination is as follows: Figure 3As shown. Initial stage (0-150ns): The output voltage remains near 0kV, in standby mode, with no pulse output; First pulse (20 power modules in series, 150-300ns): This is the strongest pulse, reaching a peak value of nearly 21kV around 200ns, then quickly falling back to 0kV around 300ns, making it the most energetic of the three pulses; Second pulse (switching to 5 power modules in series, 350-480ns): Reaching a peak value of approximately 5kV around 400ns, with a pulse width and intensity much lower than the first pulse; Third pulse (switching to another 5 power modules in series, 500-650ns): Reaching a peak value around 580ns, with a voltage and pulse width similar to the second pulse, also around 5kV, then returning to 0kV around 650ns; Terminal stage (650-800ns): The output voltage returns to a standby state near 0kV again. This multi-pulse, intensity-gradient high-voltage output waveform, achieved through combinations of different power supply modules, is suitable for scenarios requiring graded energy output. It can be used as a test waveform for pulsed power systems, where a strong pulse triggers the target, followed by weak pulses to maintain or adjust the state. It can also be used in experimental scenarios simulating natural high-voltage pulses such as lightning and electrostatic discharge to simulate multiple discharge processes. Different combinations of power supply modules can flexibly create the required pulse waveforms, adapting to various plasma 101 process requirements.

[0041] For example, the modular power supply 104 includes 25 power modules, and the output waveforms of the modular power supply 104 under different series combinations are as follows: Figure 4 As shown. Figure 4As shown, from top to bottom, the output waveforms are for six series combinations: 15 power modules in series, 3 power modules in series, 2 power modules in series, 2 power modules in series, 2 power modules in series, and 1 power module. With 15 power modules in series, the trigger time starts at approximately 50 ns and ends at approximately 225 ns, with a trigger duration of 175 ns, corresponding to the highest injection power. This allows for a rapid increase in plasma density (101), suitable for high-power applications. With 3 power modules in series, the trigger time starts at approximately 50 ns and ends at approximately 90 ns, then the trigger time again starts at approximately 130 ns and ends at approximately 225 ns, with a trigger duration of 135 ns. This intermittent power injection method offers relatively flexible power output, making it suitable for scenarios requiring phased adjustments to plasma density. When two power modules are connected in series, the trigger time ranges from approximately 130 ns to approximately 225 ns, with a trigger duration of 95 ns. When two power modules are connected in series, the trigger time ranges from approximately 150 ns to approximately 225 ns, with a trigger duration of 75 ns. When two power modules are connected in series, the trigger time ranges from approximately 170 ns to approximately 225 ns, with a trigger duration of 55 ns. When one power module is connected in series, the trigger time ranges from approximately 190 ns to approximately 225 ns, with a trigger duration of 35 ns. Figure 4 The waveform shown, triggered in a time-sharing group, can also be applied to sequential drive control strategies. This avoids the instantaneous high current surge caused by all power modules starting simultaneously, protecting multi-module power supplies and system hardware. By delaying startup in groups, the system can gradually enter its working state, improving overall stability.

[0042] This application determines the target series combination of power modules in the modular power supply 104 through process parameters. During operation according to the target series combination, the number of power modules is adjusted based on the plasma load state parameters obtained and the load state parameters of plasma 101. This allows for flexible matching of the real-time requirements of different plasma 101 loads, directly stabilizing the plasma 101 load state within the target range, rather than simply stabilizing the power supply output parameters. This fundamentally solves the industry pain point that "stable power supply parameters ≠ stable process performance." Furthermore, the dynamic series adjustment function of this application further broadens the power supply output range and improves load adaptability.

[0043] like Figure 5 As shown, this application also provides a plasma parameter control method, which employs the plasma parameter control system described above, and the method includes the following steps: S1: Obtain plasma load state parameters; S2: Based on the pre-set load state threshold, compare the load state parameters of plasma 101 with the load state threshold, and adjust the number of power modules according to the comparison result.

[0044] In one embodiment, plasma load state parameters are acquired in step S1 using plasma parameter acquisition device 102.

[0045] In one embodiment, the plasma load state parameters in this application include plasma 101 electron density or plasma 101 electron temperature.

[0046] In one embodiment, step S2 specifically includes: converting plasma load state parameters into digital signals; comparing the digital signals with load state thresholds, and adjusting the number of power modules based on the comparison result. Specifically, the plasma load state parameters Si fed back by the plasma parameter acquisition device 102 are sent to an analog-to-digital converter; the plasma load state parameters Si are converted into digital signals Di by the analog-to-digital converter; the digital signals Di are compared with the load state threshold Ci in the FPGA module, and the number of power modules is adjusted based on the comparison result. Specifically, when the digital signals Di are greater than the load state threshold Ci, the number of power modules is reduced by a preset number; when the digital signals Di are less than the load state threshold Ci, the number of power modules is increased by a preset number. The above operations are repeated until the plasma load state parameters stabilize within the target range. The target range is preset in the parameter setting module. The modular power supply 104 can achieve a wide range of output parameter adjustment by increasing or decreasing the number of switched power modules, which is fully compatible with the closed-loop control logic of the plasma load state parameters of this application. It can quickly respond to the real-time fluctuations of the plasma load state parameters and flexibly adapt to the power supply requirements of different process scenarios such as plasma surface modification, spraying, and etching. Meanwhile, the failure of a single power module can be independently isolated without affecting the operation of the system, which greatly improves the response speed, adaptability to operating conditions and reliability of the control system.

[0047] In one embodiment, when the discharge gas tube in plasma 101 discharges, the density of plasma 101 increases with the continuous injection of power. When it is desired that the density of plasma 101 does not exceed a certain value, feedback control is performed on the state of plasma 101, thereby realizing the increase or decrease control of the modular power supply in series in the modular power supply 104.

[0048] In one embodiment, before acquiring the plasma load state parameters, the method further includes: acquiring process parameters; generating a power control signal based on the process parameters; and controlling the number of power modules and the running time based on the power control signal.

[0049] This application determines the target series combination of power modules in the modular power supply 104 through process parameters. During operation according to the target series combination, the number of power modules is adjusted based on the plasma load state parameters obtained and the load state parameters of plasma 101. This allows for flexible matching of the real-time requirements of different plasma 101 loads, directly stabilizing the plasma 101 load state within the target range, rather than simply stabilizing the power supply output parameters. This fundamentally solves the industry pain point that "stable power supply parameters ≠ stable process performance." Furthermore, the dynamic series adjustment function of this application further broadens the power supply output range and improves load adaptability.

[0050] The control logic of this application is simple and direct, and is adapted to the nonlinear and time-varying characteristics of plasma 101. Compared with complex control logic such as PID calculation and phase optimization, this application controls the plasma load state parameters and the number of power supply modules directly, resulting in faster response speed, stronger anti-interference ability, and compatibility with various types of modular power supplies 104 such as DC, AC, and pulse, making it more versatile.

[0051] This application discloses a method and system for achieving precise and dynamic intelligent control of plasma 101 discharge parameters by dynamically adjusting the number of power modules connected in series in a modular power supply 104 through closed-loop control. This method can be directly applied to plasma 101 pretreatment and functional coating composite modification, and is used to improve the hydrophobicity, flashover resistance, and long-term operational stability of composite insulating materials such as silicone rubber and epoxy resin.

[0052] This application realizes intelligent control of "process-driven, parameter coordination, dynamic stability and effect optimization", which plays a key role in improving the application effect of plasma 101.

[0053] In one embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as follows: Figure 6 As shown, the computer device includes a processor, memory, network interface, and database connected via a system bus. The processor provides computational and control capabilities. The memory includes non-volatile and / or volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and database. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The network interface is used for communication with external devices via a network connection. When the computer program is executed by the processor, it implements the functions or steps of a plasma parameter control method on the server side.

[0054] In one embodiment, a computer device is provided, which may be a device terminal, and its internal structure diagram may be as follows: Figure 7As shown, the computer device includes a processor, memory, network interface, display screen, and input devices connected via a system bus. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The network interface is used to communicate with an external server via a network connection. When the computer program is executed by the processor, it implements the functions or steps of a plasma parameter control method at the device end.

[0055] In one embodiment, a computer device is provided, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to perform the following steps: Obtain plasma load state parameters; Based on a pre-set load state threshold, the load state parameters of plasma 101 are compared with the load state threshold, and the number of power modules is adjusted according to the comparison result.

[0056] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor: Obtain plasma load state parameters; Based on a pre-set load state threshold, the load state parameters of plasma 101 are compared with the load state threshold, and the number of power modules is adjusted according to the comparison result.

[0057] It should be noted that the functions or steps that can be implemented by the computer-readable storage medium or computer device described above can be referred to the relevant descriptions on the server side and device side in the foregoing method embodiments. To avoid repetition, they will not be described one by one here.

[0058] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments of the above methods. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0059] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is used as an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above.

[0060] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A plasma parameter control system, characterized in that, include: Plasma, plasma parameter acquisition device, control module and modular power supply; The modular power supply and the plasma are electrically connected. The plasma parameter acquisition device is used to acquire plasma load state parameters. The plasma parameter acquisition device and the control module are electrically connected. The control module and the modular power supply are electrically connected. The control module is used to adjust the number of power supply modules in the modular power supply according to the plasma load state parameters fed back by the plasma parameter acquisition device.

2. The plasma parameter control system according to claim 1, characterized in that, The modular power supply includes multiple power modules, which are connected in series and can be switched on and off. Each power module is electrically connected to the control module and the plasma respectively.

3. The plasma parameter control system according to claim 2, characterized in that, The power module includes capacitors, switching transistors, and transformers; The positive terminal of the capacitor is connected to the switching transistor, the switching transistor is connected to the control terminal of the control module, the input terminal of the primary coil of the transformer is connected to the negative terminal of the capacitor, the output terminal of the primary coil of the transformer is electrically connected to the switching transistor, and the output terminal of the primary coil of the transformer is grounded. The secondary coil of the transformer is magnetically connected to the primary coil of the transformer, and the secondary coil of the transformer is electrically connected to the plasma. Each power module corresponds to a secondary coil of the transformer, and the secondary coils of multiple transformers are connected in series.

4. The plasma parameter control system according to claim 1, characterized in that, The control module includes an analog-to-digital converter, an FPGA module, and a switch signal driver; The analog-to-digital converter and the plasma parameter acquisition device are electrically connected, the FPGA module and the analog-to-digital converter are electrically connected, the FPGA module and the switch signal driver are electrically connected, and the switch signal driver and the modular power supply are electrically connected.

5. The plasma parameter control system according to claim 1, characterized in that, The control module includes a parameter setting module and a power control module; The parameter setting module and the power control module are electrically connected, and the power control module and the modular power supply are electrically connected. The parameter setting module is used to determine process parameters, and the power control module is used to generate a power control signal based on the process parameters and control the number of power modules and the running time in the modular power supply based on the power control signal.

6. A method for controlling plasma parameters, characterized in that, The method, employing the plasma parameter control system as described in any one of claims 1 to 5, comprises: Obtain plasma load state parameters; Based on a pre-set load state threshold, the load state parameters of the plasma are compared with the load state threshold, and the number of power modules is adjusted according to the comparison result.

7. The plasma parameter control method according to claim 6, characterized in that, Before obtaining the plasma load state parameters, the method further includes: Obtain process parameters; A power control signal is generated based on the process parameters; The number of power modules and their operating time are controlled according to the power regulation signal.

8. The plasma parameter control method according to claim 6, characterized in that, The plasma load state parameters include plasma electron density or plasma electron temperature.

9. A computer device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the plasma parameter control method as described in any one of claims 6 to 8.

10. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements the steps of the plasma parameter control method as described in any one of claims 6 to 8.

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