Method for manufacturing epitaxial wafer, epitaxial wafer, and epitaxial growth apparatus

Abstract

This invention provides a method for preparing an epitaxial wafer. The method includes: detecting the temperature of a reaction chamber using a temperature detection module; when the temperature detected by the temperature detection module reaches a target temperature, controlling an epitaxial growth device to perform epitaxial growth on a loaded polished wafer to obtain an epitaxial wafer; there are multiple target temperatures, each corresponding to one epitaxial wafer; acquiring the morphological characteristics of each epitaxial wafer, including edge curvature and / or surface haze; performing linear fitting based on the target temperature and morphological characteristics corresponding to each epitaxial wafer to obtain a fitting curve; calibrating the temperature detection module based on the fitting curve; detecting the temperature of the reaction chamber using the calibrated temperature detection module; when the temperature detected by the calibrated temperature detection module meets preset epitaxial growth conditions, performing epitaxial growth on a newly loaded polished wafer using an epitaxial growth device to obtain a target epitaxial wafer, thereby improving the product quality of the epitaxial wafer.

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