A radiation-resistant laser-induced PN converter and its fabrication method

Abstract

This invention belongs to the field of semiconductor fabrication technology and relates to a radiation-resistant laser-induced PN converter device and its fabrication method. The device includes a substrate, a two-dimensional material heterojunction functional layer, and source / drain electrodes. The conductive channel of the two-dimensional material heterojunction functional layer is a sandwich heterojunction structure. The bottom layer of the sandwich heterojunction structure is a single-layer transition metal sulfide, the middle layer is a single-layer graphene, and the top layer is another single-layer transition metal sulfide, enabling reversible conversion of PN conductivity under laser irradiation. The two-dimensional material heterojunction functional layer is disposed on the substrate, and source / drain electrodes with a preset image are disposed on the top layer. The source / drain electrodes are connected to an external circuit. This invention suppresses the influence of irradiation defects on carrier transport through the high carrier mobility of graphene. Through the MoS2 / graphene / WS2 sandwich heterojunction structure, it achieves excellent resistance to heavy ion irradiation and maintains stable laser-induced PN conversion characteristics even after heavy ion irradiation.

Description

Technical Field

[0001] This invention relates to a radiation-resistant laser-induced PN converter device and its fabrication method, belonging to the field of semiconductor fabrication technology. Background Technology

[0002] As advanced chip manufacturing processes approach their physical limits, two-dimensional layered materials (such as graphene and transition metal sulfides), with their unique atomic-level thickness and excellent electrical, optical, and mechanical properties, have become core candidate materials for optoelectronic devices in the post-Moore's Law era. Due to their intrinsic atomic-layer structure without dangling bonds, these materials can overcome lattice matching limitations and directly construct van der Waals heterojunctions through multilayer stacking and rotation manipulation, giving rise to numerous novel physical phenomena. This further enriches and expands the dimensions and application boundaries of optoelectronic materials, demonstrating enormous application potential in the field of optoelectronic devices. Traditional PN junctions mostly achieve fixed P-type or N-type conductivity through doping processes, making dynamic control of conductivity type difficult. How to achieve reversible control of the conductivity type of PN junction devices through external stimuli has significant application value in logic circuits, memory, and photodetectors. In special application areas such as space exploration, nuclear industry, and reactors, PN junction devices are susceptible to performance degradation or even failure due to high-energy particle radiation. Therefore, optoelectronic PN devices for high-end applications must simultaneously meet the dual requirements of high-sensitivity response to optical signals and tolerance to complex radiation environments. Against this backdrop, developing PN converters that possess excellent radiation resistance, remain stable after irradiation, and exhibit PN conversion characteristics is of significant research and application importance. Summary of the Invention

[0003] To address the aforementioned problems, the purpose of this invention is to provide a laser-induced PN converter device with excellent radiation resistance and stable performance after irradiation, as well as its fabrication method.

[0004] To achieve the above objectives, the present invention proposes the following technical solution: a radiation-resistant laser-induced PN junction conversion device, comprising: a substrate, a two-dimensional material heterojunction functional layer, and source / drain electrodes. The two-dimensional material heterojunction functional layer includes a conductive channel, which is a sandwich heterojunction structure. The bottom layer of the sandwich heterojunction structure is a single-layer transition metal sulfide, the middle layer is a single-layer graphene, and the top layer is another single-layer transition metal sulfide, which can achieve reversible conversion of the PN junction conductivity under laser irradiation. The two-dimensional material heterojunction functional layer is disposed on the substrate, and source / drain electrodes with a preset image are disposed on the top layer. The source / drain electrodes are connected to an external circuit.

[0005] Furthermore, the substrate is composed of a back gate electrode layer and a gate oxide layer. The back gate electrode layer is a heavily doped silicon wafer, and the gate oxide layer is silicon dioxide. The silicon dioxide is grown on the surface of the silicon wafer by thermal oxidation.

[0006] Furthermore, the transition metal sulfide is MoS2; the other monolayer transition metal sulfide is WS2; source and drain electrodes are disposed on the other monolayer transition metal sulfide, the source and drain electrodes are composed of titanium and gold layers, and are connected to an external circuit.

[0007] Furthermore, the two-dimensional material heterostructure functional layer introduces defects of a predetermined type and concentration through particle irradiation, which serve as exciton binding centers.

[0008] Furthermore, during the particle irradiation process, the ion flux is controlled at 1×10⁻⁶. 8 ions / cm 2 Up to 1×10 11 ions / cm 2 Within a certain range, defects of preset types and concentrations are introduced.

[0009] Furthermore, during the particle irradiation process, the irradiation energy is adjusted using an aluminum foil energy-reducing sheet.

[0010] Furthermore, the two-dimensional material heterojunction functional layer is irradiated with tantalum ions with energy on the order of GeV.

[0011] This invention also discloses a method for fabricating a radiation-resistant laser-induced PN converter device, used to fabricate any of the radiation-resistant laser-induced PN converter devices described above, comprising the following steps: removing contaminants from the substrate surface; transferring a monolayer of transition metal sulfide onto the substrate and performing vacuum annealing; transferring a monolayer of graphene onto the monolayer of transition metal sulfide and performing vacuum annealing; transferring another monolayer of transition metal sulfide onto the monolayer of graphene and performing vacuum annealing; coating the other monolayer of transition metal sulfide with adhesive, laser-writing source and drain electrode patterns, depositing gold electrodes by electron beam evaporation, and finally removing the adhesive to obtain the desired source and drain electrode patterns, thereby obtaining the PN converter device.

[0012] Furthermore, the method for removing contaminants from the substrate surface is as follows: ultrasonically clean the substrate surface with acetone, ethanol and deionized water in sequence for 10-20 minutes to remove contaminants, and then dry the substrate surface under a nitrogen atmosphere.

[0013] Furthermore, the PN converter device with the obtained source-drain electrode patterns is annealed in an argon atmosphere at a temperature of 90-120 °C for 20-40 minutes to obtain the final PN converter device.

[0014] The technical solution of the present invention has at least the following technical effects or advantages: The two-dimensional material heterojunction functional layer used in this invention is one of the most mainstream and mature two-dimensional heterostructure types in current two-dimensional material electronics and optoelectronics. It does not require complex electrical gate voltage control and can achieve reversible conversion of PN junction conductivity characteristics under laser irradiation. It is fully compatible with existing CMOS (complementary metal-oxide-semiconductor) processes, laying a solid foundation for the large-scale integration and application of this technology in the future.

[0015] This invention suppresses the influence of irradiation defects on carrier transport by utilizing the high carrier mobility of graphene. It achieves excellent resistance to heavy ion irradiation through a MoS2 / graphene / WS2 sandwich heterojunction structure and maintains stable laser-induced PN conversion characteristics even after heavy ion irradiation.

[0016] By precisely adjusting the energy, type, and flux of ions, nanoscale precise control over the spatial distribution, type, and concentration of introduced defects can be achieved, thereby enabling the regulation of exciton properties, which is difficult to achieve with many traditional chemical or mechanical methods. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of an anti-radiation laser-induced PN converter device in one embodiment of the present invention; Figure 2 This is a diagram showing the PN conversion characteristics induced by the PN converter before and after irradiation in one embodiment of the present invention. Figure 2 (a), (b), and (c) are the PN conversion characteristics under dark conditions before irradiation and after laser irradiation with a wavelength of 520 nm, respectively. Figure 2 (d), (e) and (f) are PN conversion characteristics under dark conditions after irradiation and after laser irradiation with a wavelength of 520 nm, respectively. Figure 3 In one embodiment of the present invention, the irradiation dose is 1×10⁻⁶. 11 ions / cm 2 Photoelectric response diagram of PN converter after irradiation; Figure 4 This is a graph showing the variation of the photoluminescence spectrum of a two-dimensional heterojunction under different Ta ion irradiation doses in one embodiment of the present invention; Figure 5 This is a diagram illustrating the modulation effect of intralayer and interlayer exciton luminescence intensity in one embodiment of the present invention. Figure 5 (a) is a graph showing the ratio of neutral exciton to charged triexciton intensity in molybdenum sulfide and tungsten sulfide layers as a function of irradiation flux, indicating that irradiation introduces exciton conversion. Figure 5 (b) is a graph showing the variation of interlayer exciton intensity with irradiation flux; Figure 6 In one embodiment of the present invention, the irradiation dose is 1×10⁻⁶. 9 ions / cm2 Comparison of photoelectric response of PN converter before and after irradiation. Detailed Implementation

[0018] To enable those skilled in the art to better understand the technical solutions of the present invention, the present invention is described in detail through specific embodiments. However, it should be understood that the specific embodiments are provided only for a better understanding of the present invention and should not be construed as limiting the present invention. In the description of the present invention, it should be understood that the terminology used is for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0019] To address the problems of existing PN converters' ineffective radiation resistance and complex PN conversion control, this invention proposes a radiation-resistant laser-induced PN converter device and its fabrication method. The device includes a substrate, a two-dimensional material heterojunction functional layer, and source / drain electrodes. The two-dimensional material heterojunction functional layer includes a conductive channel, which is a sandwich heterojunction structure. The bottom layer of the sandwich heterojunction structure is a single-layer transition metal sulfide, the middle layer is a single-layer graphene, and the top layer is another single-layer transition metal sulfide, enabling reversible conversion of PN junction conductivity under laser irradiation. The two-dimensional material heterojunction functional layer is disposed on the substrate, and source / drain electrodes with a pre-defined pattern are disposed on the top layer, which are connected to an external circuit. In this invention, the PN converter device utilizes the high carrier mobility of graphene to suppress the influence of irradiation defects on carrier transport. Through the MoS2 / graphene / WS2 sandwich heterojunction structure, it achieves excellent resistance to heavy ion irradiation and maintains stable laser-induced PN conversion characteristics even after heavy ion irradiation. The following detailed description of the invention, in conjunction with the accompanying drawings, provides specific examples.

[0020] Example 1 This embodiment discloses a radiation-resistant laser-induced PN converter device, such as... Figure 1 As shown, the device includes a substrate, a two-dimensional material heterojunction functional layer, and source / drain electrodes. The two-dimensional material heterojunction functional layer includes a conductive channel. In this embodiment, the conductive channel is a sandwich heterojunction structure. The bottom layer of the sandwich heterojunction structure is a single-layer transition metal sulfide, the middle layer is a single-layer graphene, and the top layer is another single-layer transition metal sulfide. This structure enables reversible conversion of the PN junction conductivity under laser irradiation and exhibits excellent resistance to heavy ion irradiation. Furthermore, the PN conversion device continues to operate normally after high-flux heavy ion irradiation. The two-dimensional material heterojunction functional layer is disposed on the substrate, and source / drain electrodes with a preset image are disposed on the top layer. The source / drain electrodes are connected to an external circuit. The PN conversion device of this invention maintains stable laser-induced PN conversion characteristics after heavy ion irradiation and retains photoelectric response characteristics even after high-flux irradiation. It is suitable for optoelectronic detection and signal processing in radiation environments such as space exploration, nuclear industry, and reactors.

[0021] The substrate consists of a back gate electrode layer and a gate oxide layer. The back gate electrode layer is a highly doped silicon wafer with a thickness of 500 μm and a doping concentration of 10. 19 cm -3 Within this range, the resistivity is approximately 0.01~0.02 Ω. cm. The gate oxide layer is made of silicon dioxide, which is formed on the surface of the silicon wafer by thermal oxidation, and the thickness of the silicon dioxide is 300 nm. Through specific material selection and preparation processes, the PN converter device exhibits excellent resistance to heavy ion irradiation. Lasers of different wavelengths were used as light sources; in this embodiment, the laser wavelength was 520 nm, to perform performance tests on the PN converter. The test results before irradiation are as follows: Figure 2 As shown in (a), (b) and (c), the PN converter exhibits P-type conductivity under dark conditions. Under the illumination of a 520 nm laser with a power density of 17 mW, it transforms into N-type conductivity. After the laser is turned off, it gradually returns to P-type conductivity over time.

[0022] Energy 2.7 GeV 181 Ta ions, dosage 1×10 9 ions / cm 2 After irradiation, the PN conversion device retains the laser-induced PN conversion characteristics described above, such as... Figure 2 As shown in (d), (e), and (f). Maximum dose up to 1 × 10⁻⁶. 11 ions / cm 2 After irradiation, PN converters still retain their photoelectric response characteristics, such as Figure 3 As shown.

[0023] In this embodiment, the transition metal sulfide is MoS2; another single-layer transition metal sulfide is WS2; a source / drain electrode is disposed on the other single-layer transition metal sulfide, which is composed of a titanium layer and a gold layer and is connected to an external circuit.

[0024] The conductive channel is set on the substrate, and the source and drain electrodes with a preset pattern are set on the top layer. The source and drain electrodes are connected to the external circuit. The pattern of the source and drain electrodes is set by electron beam lithography (EBL). A 20 nm titanium layer (Ti) and a 60 nm gold layer (Au) are deposited sequentially by electron beam evaporation (EBE) to prepare the source and drain electrodes.

[0025] Two-dimensional heterojunctions were irradiated with tantalum Ta ions at an energy of 2.7 GeV to introduce defects of a predetermined type and concentration, which served as exciton binding centers. The ion flux during the irradiation process was controlled at 1 × 10⁻⁶. 8 ions / cm 2 Up to 1×10 11 ions / cm2 Within a certain range, defects of a predetermined type and concentration are introduced. The functional layer of the two-dimensional material heterostructure introduces defects of a predetermined type and concentration through particle irradiation, using these defects as exciton binding centers. In this embodiment, the irradiation energy is adjusted using an aluminum foil energy-reducing sheet with a purity of 99.99%.

[0026] Example 2 Based on the same inventive concept, this embodiment discloses a method for fabricating a radiation-resistant laser-induced PN converter device, used to fabricate a radiation-resistant laser-induced PN converter device as described above, comprising the following steps: S1 removes contaminants from the substrate surface.

[0027] The substrate consists of a silicon layer and a silicon dioxide layer. A highly doped p-type silicon wafer with dimensions of 1 cm × 1 cm is selected as the back gate electrode layer. A 300 nm thick silicon dioxide layer is grown on the surface of the p-type silicon wafer using a thermal oxidation method, serving as the gate oxide layer. Its function is to provide stable gate voltage support for the two-dimensional heterojunction, ensuring the foundation for potential regulation of the heterojunction channel layer. The resistivity of the highly doped p-type silicon wafer is ≤0.02 Ω. cm, with a thickness of 300-500 μm.

[0028] The method for removing contaminants from the substrate surface is as follows: ultrasonically clean the substrate surface with acetone, ethanol and deionized water in sequence for 10-20 minutes, preferably 15 minutes, to remove contaminants, and then dry the substrate surface under a nitrogen atmosphere.

[0029] S2 transfers a monolayer of transition metal sulfide onto the substrate and performs vacuum annealing.

[0030] S3 transfers monolayer graphene onto a monolayer transition metal sulfide and then performs vacuum annealing.

[0031] S4 transfers another monolayer transition metal sulfide onto monolayer graphene and then performs vacuum annealing.

[0032] In this embodiment, the transition metal sulfide is MoS2; another monolayer transition metal sulfide is WS2. Monolayer MoS2, monolayer graphene, and monolayer WS2 are prepared by mechanical exfoliation or chemical vapor deposition (CVD).

[0033] S5 involves coating a top-layer monolayer transition metal sulfide with resist, laser-written source / drain electrode patterns, exposure, reactive ion etching (RIE) to pattern the material, removing the resist to obtain the patterned heterojunction material, followed by vacuum annealing, resist coating, laser-written source / drain electrode patterns, electron beam evaporation to deposit gold electrodes (20 nm Ti + 60 nm Au), and finally removing the resist to obtain the desired source / drain electrode patterns, thus obtaining the PN converter device.

[0034] The PN converter device with the desired source and drain electrode pattern obtained by removing the adhesive is annealed in an argon atmosphere at a temperature of 90-120 °C, preferably 110 °C, for 20-40 minutes, preferably 30 minutes, to obtain the final PN converter device.

[0035] The van der Waals heterojunction was fixed in a vacuum irradiation target chamber, using energies on the order of GeV. 181 Ta ions were used to irradiate van der Waals heterostructures, with the irradiation energy adjusted using an aluminum foil energy-reducing plate of 99.99% purity. The van der Waals heterostructures were irradiated with precisely controlled ion fluxes of 0 (unirradiated control group) and 1×10⁻⁶ ions. 8 1×10 9 1×10 10 and 1×10 11 ions / cm 2 Maintain room temperature during irradiation and ensure that the ion beam uniformly covers the entire region of the van der Waals heterojunction pair.

[0036] The ion flux was controlled at 1×10 during irradiation. 8 ions / cm 2 Up to 1×10 11 ions / cm 2 Within a certain range, defects of a predetermined type and concentration are introduced into the van der Waals heterostructure.

[0037] Heavy ion irradiation experiment Irradiation was performed using a 2.7 GeV Ta ion beam provided by the Lanzhou Heavy Ion Accelerator (HIRFL), with an ion flux range of 1 × 10⁻⁶. 8 Up to 1×10 11 ions / cm 2 The irradiation was carried out in a vacuum at room temperature, with the ion beam incident perpendicularly on the surface of the PN converter device. Calculations showed that the ions had a range of 161.7 μm in the PN converter device, which could penetrate the heterojunction layer (several nanometers) and the silicon dioxide layer (300 nm) before finally settling in the silicon layer of the back gate electrode.

[0038] Laser-induced PN conversion characteristic test: The transfer curves of the PN converter were tested under dark conditions with a fixed source-drain voltage. V ds Value (0.05 V) Back gate voltage V gs Scan in the positive voltage direction (-20 V to 20 V) and detect. I ds - V gsThe curves show typical P-type conductivity characteristics. Under 520 nm laser (17 mW) irradiation: the I-V curve of the PN conversion device rapidly transforms into N-type conductivity characteristics, achieving a complete conversion from P-type to N-type; after the laser is turned off, the conductivity characteristics of the PN conversion device gradually return to P-type conductivity over time.

[0039] Irradiation characteristics test: Energy 2.7 GeV, flow rate 1×10 9 ions / cm 2 of 181 After Ta ion irradiation, the PN conversion device maintains stable laser-induced PN conversion characteristics: P-type characteristics in darkness, N-type characteristics under laser, and reverts to P-type after the laser is turned off. High fluence 1×10⁻⁶ 11 ions / cm 2 of 181 Even after Ta ion irradiation, PN converters can still achieve laser-induced photoelectric response.

[0040] The photoelectric properties of the irradiated two-dimensional heterojunction were tested, including photoluminescence (PL) spectroscopy and photoelectric response testing.

[0041] In photoluminescence (PL) spectroscopy testing, a confocal micro-Raman spectrometer was used to perform photoluminescence spectroscopy tests on the van der Waals heterojunction before and after irradiation, such as... Figure 1 As shown. The excitation laser wavelength was 532 nm, and the power was kept at a low level (e.g., 10 mW) to avoid additional damage to the sample. By analyzing the intensity and position changes of different peaks in the PL spectrum, the contributions of different fluence particle irradiations to intralayer and interlayer excitons can be distinguished.

[0042] like Figure 4 As shown, the PL spectrum of the two-dimensional heterojunction changes continuously with increasing flux. Figure 5 (a) This indicates that ion irradiation introduces a conversion between charged triexcitons and neutral excitons in molybdenum sulfide and tungsten sulfide layers. For example... Figure 5 As shown in (b), compared to the unirradiated two-dimensional heterojunction, after 1×10 8 and 1×10 9 ions / cm 2 The photoluminescence spectrum of ion-fluted two-dimensional heterojunctions showed a significant enhancement in the intensity of the interlayer exciton peak. This indicates that the defects introduced by irradiation effectively modulate the exciton recombination dynamics, enhancing the exciton luminescence efficiency by providing additional recombination channels or localization centers.

[0043] In photoelectric response testing, a constant bias voltage (e.g., 0.1V) is applied between the source and drain electrodes of a two-dimensional heterojunction. Lasers of varying powers (e.g., 520 nm) are used to irradiate the channel region of the two-dimensional heterojunction, and the photocurrent of the two-dimensional heterojunction is measured. I ph Through photoelectric responsivity R formula R = I ph / P Calculate the photoelectric responsivity, where, P This represents the incident light power.

[0044] like Figure 6 As shown, under the same test conditions, after 1×10 9 ions / cm 2 The photoelectric responsivity of the irradiated two-dimensional heterojunction is nearly three times higher than that of the unirradiated two-dimensional heterojunction. This indicates that defects modulate exciton properties, and the separation and transport processes of photogenerated carriers are optimized, thereby significantly improving the photodetection capability of the two-dimensional heterojunction.

[0045] Photoelectric performance test results show that when the ion flux is 1×10 8 Up to 1×10 9 ions / cm 2 During irradiation, defects of a predetermined type and concentration were introduced into the heterojunction. These defects acted as exciton binding centers and effectively promoted interlayer coupling, resulting in a significant enhancement in the luminescence intensity of both intralayer and interlayer excitons. Compared with the unirradiated two-dimensional heterojunction, its photoelectric responsivity was improved.

[0046] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific embodiments of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the protection scope of the claims of the present invention. The above content is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.

Claims

1. A radiation-resistant laser-induced PN converter device, characterized in that, include: The system comprises a substrate, a two-dimensional material heterojunction functional layer, and source / drain electrodes. The two-dimensional material heterojunction functional layer includes a conductive channel, which is a sandwich heterojunction structure. The bottom layer of the sandwich heterojunction structure is a single-layer transition metal sulfide, the middle layer is a single-layer graphene, and the top layer is another single-layer transition metal sulfide, which can achieve reversible conversion of the PN junction conductivity under laser irradiation. The two-dimensional material heterojunction functional layer is disposed on the substrate, and source / drain electrodes with a preset image are disposed on the top layer. The source / drain electrodes are connected to an external circuit.

2. The radiation-resistant laser-induced PN converter device as described in claim 1, characterized in that, The substrate consists of a back gate electrode layer and a gate oxide layer. The back gate electrode layer is a heavily doped silicon wafer, and the gate oxide layer is silicon dioxide. The silicon dioxide is grown on the surface of the silicon wafer by thermal oxidation.

3. The radiation-resistant laser-induced PN converter device as described in claim 1, characterized in that, The transition metal sulfide is MoS2; the other single-layer transition metal sulfide is WS2; a source / drain electrode is disposed on the other single-layer transition metal sulfide, the source / drain electrode is composed of a titanium layer and a gold layer, and is connected to an external circuit.

4. The radiation-resistant laser-induced PN converter device as described in claim 1, characterized in that, The two-dimensional material heterostructure functional layer introduces defects of a predetermined type and concentration through particle irradiation, which serve as exciton binding centers.

5. The two-dimensional heterojunction based on ion irradiation as described in claim 4, characterized in that, During the particle irradiation process, the ion flux is controlled at 1×10⁻⁶. 8 ions / cm 2 Up to 1×10 11 ions / cm 2 Within a certain range, defects of preset types and concentrations are introduced.

6. The two-dimensional heterojunction exciton modulation method based on ion irradiation as described in claim 4, characterized in that, During the particle irradiation process, the irradiation energy is adjusted by using an aluminum foil energy-reducing plate.

7. The two-dimensional heterojunction exciton modulation method based on ion irradiation as described in claim 5, characterized in that, The functional layer of the two-dimensional material heterostructure was irradiated with tantalum ions with energy on the order of GeV.

8. A method for fabricating a radiation-resistant laser-induced PN converter device, used to fabricate the radiation-resistant laser-induced PN converter device as described in any one of claims 1-7, characterized in that, Includes the following steps: Remove contaminants from the substrate surface; A monolayer of transition metal sulfide was transferred onto a substrate and then vacuum annealed. A single layer of graphene was transferred onto the single-layer transition metal sulfide and then vacuum annealed. Another monolayer transition metal sulfide was transferred onto the monolayer graphene and then vacuum annealed. A resist is applied to another single-layer transition metal sulfide, and the source and drain electrode patterns are directly written by laser. Gold electrodes are then deposited by electron beam evaporation. Finally, the resist is removed to obtain the desired source and drain electrode patterns, thus obtaining a PN converter device.

9. The method for preparing the radiation-resistant laser-induced PN converter device as described in claim 8, characterized in that, The method for removing contaminants from the substrate surface is as follows: ultrasonically clean the substrate surface with acetone, ethanol and deionized water for 10-20 minutes in sequence to remove contaminants, and then dry the substrate surface under a nitrogen atmosphere.

10. The method for preparing the radiation-resistant laser-induced PN converter device as described in claim 8, characterized in that, The PN converter with the obtained source and drain electrode patterns is annealed in an argon atmosphere at a temperature of 90-120 °C for 20-40 minutes to obtain the final PN converter.

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