Method and system for simulation modeling of through-silicon via based microsystem interconnect modules under proton irradiation
By constructing a finite element model and a proton radiation fluence correlation model for a three-dimensional microsystem, the shortcomings of existing technologies in modeling radiation damage of three-dimensional interconnected structures are addressed, enabling accurate prediction of electrical performance and reliability assessment of three-dimensional integrated microsystems under radiation conditions.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NAT SPACE SCI CENT CAS
- Filing Date
- 2025-07-23
- Publication Date
- 2026-07-03
AI Technical Summary
Existing technologies lack accurate radiation damage modeling methods for three-dimensional interconnect structures, fail to fully consider the impact of manufacturing defects, and oversimplify equivalent circuit models, resulting in discrepancies between simulation results and measured data, making it difficult to accurately assess the reliability of three-dimensional integrated microsystems under radiation environments.
By acquiring the geometric parameters and material properties of the three-dimensional microsystem, a finite element model is established, a correlation model between material properties and scattering parameters is constructed, equivalent circuit parameters are extracted, a proton irradiation experiment is conducted, a correlation model between proton radiation fluence and scattering parameters is established, and the equivalent circuit model is optimized by combining finite element analysis and multivariate model.
It enables accurate prediction of the electrical performance of three-dimensional integrated microsystems under radiation environment, provides scientific basis to support reliability design, and reduces design error and experimental cost.
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Figure CN122333831A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of three-dimensional integrated circuit protection technology under aerospace irradiation environment, and in particular to a proton irradiation simulation modeling method and system for microsystem interconnect modules based on through-silicon vias. Background Technology
[0002] 3D integration technology, as a key means to improve circuit integration and performance, significantly reduces signal transmission delay and optimizes system power consumption and package size by stacking and interconnecting multiple chips. The introduction of Through Silicon Via (TSV) technology, enabling vertical chip interconnection, is the core of 3D integration technology. However, in specialized applications such as aerospace, 3D integrated microsystems face the challenge of harsh radiation environments.
[0003] High-energy protons in the space radiation environment can significantly impact the signal integrity of three-dimensional microsystems. Proton irradiation leads to lattice defects and radiation-induced deep-level traps, which interact with semiconductor materials through non-ionizing energy loss mechanisms. This interaction increases carrier recombination and trapping probabilities, thereby affecting the switching characteristics of devices and causing transconductance degradation and threshold voltage drift. In vertical interconnect structures, displacement damage caused by protons penetrating the TSV dielectric layer alters the dielectric constant of the insulating material, exacerbating parasitic capacitance effects and crosstalk noise during signal transmission. The cumulative effect of proton irradiation also induces an increase in interface state density, reducing the barrier height between the interconnect metal and the dielectric layer, leading to increased leakage current and signal waveform distortion. These effects significantly reduce the noise immunity of three-dimensional integrated systems and threaten the synchronization of timing signals in high-density stacked structures.
[0004] Currently, simulation studies of three-dimensional interconnect structures mainly focus on structural design and electrical performance optimization. Finite element analysis software (such as HFSS) and circuit simulation tools are widely used for the electrical performance analysis of microsystems. However, in reliability studies under radiation environments, existing technologies still have the following shortcomings:
[0005] 1. There is a lack of accurate radiation damage modeling methods for three-dimensional interconnect structures (especially TSV structures). Existing models struggle to accurately describe radiation-induced changes in material parameters and their impact on signal transmission characteristics.
[0006] 2. The simulation results were not adequately considered due to defects in the actual sample manufacturing process. Defects of varying degrees that occur during the manufacturing process of actual samples lead to subtle changes in the structure of the test samples. The randomness of the defect distribution makes accurate modeling impossible in the software, resulting in discrepancies between the simulation results and actual measurements.
[0007] 3. The equivalent circuit model is oversimplified and cannot accurately reflect the electrical characteristics of complex three-dimensional interconnect structures. Existing equivalent circuit models may have neglected some key electrical components during the simplification process, leading to discrepancies between simulation results and measured data.
[0008] Therefore, it is necessary to further develop accurate radiation damage modeling methods, consider the impact of manufacturing defects, and optimize equivalent circuit models, so as to provide more accurate theoretical and technical support for the reliability study of three-dimensional integrated microsystems under radiation environment. Summary of the Invention
[0009] The purpose of this invention is to overcome the problem of low reliability of three-dimensional integrated microsystem modules under proton irradiation, thereby providing a proton irradiation simulation modeling method and system for microsystem interconnection modules based on TSV.
[0010] To solve the above-mentioned technical problems, the present invention provides a proton irradiation simulation modeling method for microsystem interconnect modules based on through-silicon vias (TSVs), comprising:
[0011] Step 1: Obtain the geometric parameters and material properties of the through-silicon vias, redistribution layers, and microbumps of the 3D microsystem;
[0012] Step 2: Based on geometric parameters and material properties, establish a finite element model of a three-dimensional microsystem including through-silicon vias, redistribution layers, and microbumps using finite element analysis software;
[0013] Step 3: By adjusting the material parameters of the finite element model of the three-dimensional microsystem, the scattering parameters under different material property conditions are obtained, and a correlation model between the material property parameters and the scattering parameters is constructed.
[0014] Step 4: In the ADS compilation environment, extract the circuit parameters of through silicon vias, redistribution layers, and microbumps from the finite element model, and construct the RLC equivalent circuit; based on the RLC equivalent circuit, establish a correlation model between the RLC equivalent circuit and the scattering parameters.
[0015] Step 5: Conduct proton irradiation experiments with different radiation fluences, test scattering parameters, and obtain experimental data on scattering parameters; based on the experimental data on scattering parameters, construct a correlation model between proton radiation fluence and scattering parameters;
[0016] Step 6: Construct a correlation model between proton radiation fluence and RLC equivalent circuit, and based on the correlation model between proton radiation fluence and RLC equivalent circuit, construct correlation models between proton radiation fluence and resistance, inductance and capacitance in RLC equivalent circuit respectively.
[0017] As an improvement to the above method, in step 1, the geometric parameters of the through-silicon via include: radius, length, and insulating layer parameters; the geometric parameters of the redistribution layer include: width and height; the geometric parameters of the microbumps include: size; and the material properties include: electrical conductivity, magnetic permeability, and dielectric constant.
[0018] As an improvement to the above method, in step 2, the finite element analysis software used is HFSS simulation software, specifically including: using HFSS simulation software, based on geometric parameters and material properties, preset boundary conditions and port excitation, to establish a finite element model of a three-dimensional microsystem containing through silicon vias, redistribution layers and microbumps, wherein the boundary conditions include the electrical conductivity, dielectric constant and magnetic permeability of the material; the frequency range of the port excitation is set to 0.1-26.5 GHz.
[0019] As an improvement to the above method, step 3 specifically includes: adjusting the material property parameters of the through-silicon vias, redistribution layers, and microbumps in HFSS simulation software; extracting scattering parameters under different material property conditions; and constructing a correlation model between the material property parameters and scattering parameters at a fixed frequency point using a polynomial fitting method; wherein,
[0020] The model for conductivity S1 is:
[0021] S1=aμ 2 +bμ+c
[0022] The model for the dielectric constant S2 is:
[0023] S2=aε 2 +bε+c
[0024] Where a is the first coefficient, b is the second coefficient, c is the constant term, μ is the relative permeability of the material, and ε is the relative permittivity of the material.
[0025] As an improvement to the above method, step 4, which involves extracting the equivalent circuit parameters of the redistribution layer, includes:
[0026] Extract the total resistance R of the redistribution layer. RDL :
[0027]
[0028] Among them, R RDL,dc R is the DC resistance of the redistribution layer. RDL,ac For the AC resistance of the redistribution layer; where,
[0029]
[0030] Where, ρ RDL For the material resistivity of the redistribution layer, l RDLw is the length of the redistribution layer. RDL t is the conductor width of the rewiring layer. RDL σ represents the conductor thickness of the rewiring layer. RDL The conductivity of the material used in the redistribution layer, where,
[0031]
[0032] Where μ0 is the free permeability, μ r,RDL S represents the relative permeability of the redistribution layer material. RDL This represents the distance between adjacent redistribution layers.
[0033] Extract the capacitor C of the insulating layer below the redistribution layer. RDLtoSub :
[0034]
[0035] Where ε0 is the vacuum permittivity, ε RDLox1 is the dielectric constant of the insulating layer below the redistribution layer, and lox is the length of the insulating layer;
[0036] Extracting the redistribution layer in silicon equivalent capacitance C RDLinSub :
[0037]
[0038] ε r,eff h is the effective dielectric constant. eff For effective height, among which,
[0039]
[0040] Where h is the measurement height of the redistribution layer.
[0041] As an improvement to the above method, step 4, which involves extracting the equivalent circuit parameters of the through-silicon vias and microbumps, includes:
[0042] Extracting the DC resistance R of a through-silicon via TSV,dc :
[0043]
[0044] Extracting the AC resistance R of a through-silicon via TSV,ac :
[0045]
[0046] Where, ρ TSV h is the resistivity of the material in a through-silicon via. TSV r is the height of the through-silicon via. TSV Let δ be the radius of the through-silicon via. skindepth,TSVIndicates the depth of current in a through-silicon via;
[0047] Extracting the DC resistance R of the micro-bump bump,dc :
[0048]
[0049] Extracting the AC resistance R of the micro-bump BUMPac :
[0050]
[0051] Where, ρ BUMP h is the resistivity of the material with micro-bumps. Bump r is the height of the micro-bump. Bump Let δ be the radius of the micro-bump. skindepth,BUMP This indicates the depth of the current in the microbump;
[0052] Extracting the inductance L of the micro-bump Bump :
[0053]
[0054] Among them, h TSV r is the height of the through-silicon via. TSV p is the radius of the through-silicon via. TSV The distance between two adjacent silicon via pillars is denoted by f, and f is the signal frequency when the circuit is in use.
[0055]
[0056] Where C TSV-ax ε represents the total oxide capacitance of the through-silicon via. TSVox Let r be the dielectric constant of the oxide layer material of the through-silicon via. dep t is the outer radius of the maximum depletion layer of the oxide layer. ox C represents the structural thickness of the oxide layer. ox For silicon dioxide dielectric capacitors with oxide layers, C dep This is the depletion region capacitance when the depletion layer thickness is at its maximum in a silicon substrate with an oxide layer.
[0057] As an improvement to the above method, in step 5, different radiation fluences include: E10 P / cm 2 E11P / cm 2 and E12 P / cm 2 Scattering parameters were tested using a network analyzer; using polynomial fitting, based on the experimental data of the scattering parameters, the relationship between radiative fluence and scattering parameters was established, linear and nonlinear influence coefficients were determined, and a correlation model between proton radiative fluence and scattering parameters was constructed.
[0058] S11=dD3 +eD 2 +fD+g;
[0059] Where S11 is the reflection coefficient, D is the radiation dose, d is the cubic coefficient characterizing the higher-order nonlinear effect of the radiation dose on the reflection coefficient S11, e is the quadratic coefficient reflecting the nonlinear effect of the radiation dose on the reflection coefficient S11, f is the linear coefficient representing the degree of linear effect of the radiation dose on the reflection coefficient S11, and g represents the initial reflection coefficient value under no-irradiation conditions.
[0060] As an improvement to the above method, step 6 is followed by a verification step: taking the equivalent circuit parameters under different radiation fluence conditions as input, performing circuit simulation in the ADS simulation environment to obtain the simulation results of the scattering parameters; performing error analysis between the simulation results of the scattering parameters and the experimental data of the scattering parameters to verify the accuracy of the correlation model between proton radiation fluence and scattering parameters.
[0061] As an improvement to the above method, the error analysis includes the following steps:
[0062] The degree of matching R between the correlation model of proton radiation fluence and scattering parameters and the experimental data of scattering parameters was obtained. 2 :
[0063]
[0064] Where SSE represents the predicted value of scattering parameter S21 fitted by the correlation model between proton radiative fluence and scattering parameters. The measured value y of the scattering parameter S21 obtained from the experiment i The squared difference between them, SST represents the measured value of the scattering parameter S21 obtained in the experiment. i The measured mean of the scattering parameter S21 obtained from the experiment The difference of squares between them; where,
[0065]
[0066] To achieve another objective of the present invention, the present invention also provides a proton irradiation simulation modeling system based on a microsystem interconnect module using through-silicon vias (TSVs), comprising:
[0067] The finite element model building module is used to obtain the geometric parameters and material properties of through-silicon vias, redistribution layers, and microbumps in a three-dimensional microsystem. Based on the geometric parameters and material properties, a finite element model of the three-dimensional microsystem containing through-silicon vias, redistribution layers, and microbumps is built using finite element analysis software.
[0068] The module for building a correlation model between material property parameters and scattering parameters is used to adjust the material parameters of the finite element model of a three-dimensional microsystem, obtain the scattering parameters under different material property conditions, and build a correlation model between material property parameters and scattering parameters.
[0069] The module for constructing the correlation model between RLC equivalent circuit and scattering parameters is used in the ADS compilation environment to extract the circuit parameters of through silicon vias, redistribution layers and microbumps in the finite element model and construct the RLC equivalent circuit; based on the RLC equivalent circuit, a correlation model between the RLC equivalent circuit and scattering parameters is established.
[0070] A module for constructing a correlation model between proton radiative flux and scattering parameters is used to conduct proton irradiation experiments with different radiative fluxes, test scattering parameters, and obtain experimental data on scattering parameters; based on the experimental data on scattering parameters, a correlation model between proton radiative flux and scattering parameters is constructed; and,
[0071] The RLC equivalent circuit correlation model construction module is used to construct a correlation model between proton radiation fluence and RLC equivalent circuit, and based on the correlation model between proton radiation fluence and RLC equivalent circuit, construct correlation models between proton radiation fluence and resistance, inductance and capacitance in RLC equivalent circuit respectively.
[0072] Compared to existing technologies, the advantages of this invention lie in its method and system for proton irradiation simulation modeling of TSV-based microsystem interconnect modules. Addressing the complex effects of three-dimensional integrated microsystem modules under radiation environments, this invention establishes a correlation model between radiation dose, frequency, equivalent circuit parameters, and scattering parameters through finite element analysis and multivariate model construction, combined with univariate analysis calculations and model diagnostic verification. This overcomes the shortcomings of existing technologies in simulating and modeling the radiation effects of three-dimensional integrated microsystem modules, enabling accurate prediction of the electrical performance of these modules under different radiation conditions. This provides a scientific basis for the reliability design of three-dimensional integrated microsystem modules in radiation environments such as aerospace. Attached Figure Description
[0073] Figure 1 A flowchart illustrating the proton irradiation simulation modeling method for TSV-based microsystem interconnect modules;
[0074] Figure 2 This is a cross-sectional view of the TSV;
[0075] Figure 3 The first schematic diagram shows the relationship between the reflection coefficient S11 and the proton radiative fluence.
[0076] Figure 4 This is a second schematic diagram showing the relationship between the reflection coefficient S11 and the proton radiative fluence.
[0077] Figure 5 The figure shows a comparison of the scattering coefficient S21 of the model and the actual measurement at different frequencies. Detailed Implementation
[0078] The technical solutions provided by the present invention will be further illustrated below with reference to the embodiments.
[0079] Example 1
[0080] like Figure 1 As shown, the proton irradiation simulation modeling method for a TSV-based microsystem interconnect module provided in this embodiment includes the following steps:
[0081] 1. Sample parameter acquisition
[0082] Geometric parameters and material properties of the 3D microsystem modules are extracted, including: the radius, length, filler material, and insulating layer parameters of the TSV; the width, height, and material properties of the redistribution layer; the size and material properties of the microbumps; and the conductivity and dielectric constant of the substrate material. High-precision parameter extraction is ensured using specialized measurement equipment.
[0083] 2. Geometric Model Construction
[0084] In the HFSS simulation environment, a three-dimensional microsystem finite element model containing structures such as TSV, RDL, and BUMP is established based on the extracted sample parameters. Appropriate boundary conditions and excitation sources are set to ensure that the model can realistically simulate electrical behavior and response under radiation conditions.
[0085] 3. Correlation model between material parameters and scattering parameters
[0086] In HFSS, scattering parameter curves under different material conditions are obtained by adjusting the material parameters in the finite element model. Key frequency points are selected, and the relationship between material parameters and scattering parameters is established using polynomial fitting.
[0087] 4. Construction of equivalent circuit model
[0088] In the ADS environment, based on the geometric model analysis results, the equivalent circuit parameters of RDL, TSV, and BUMP are extracted. An RLC equivalent circuit model is constructed, and the parasitic resistance and parasitic capacitance and their calculation methods are clarified.
[0089] 5. Correlation model between circuit characteristics and scattering parameters
[0090] Based on the equivalent circuit model extraction method, and combined with the correlation model between material parameters and scattering parameters, the relationship between S-parameters and RLC equivalent circuit parameters is established.
[0091] 6. Proton irradiation experiment
[0092] Total dose radiation experiments were conducted on the samples, with different dose points set, and the scattering parameter curves under the radiation environment were recorded. A network analyzer was used to test and ensure the accuracy of the data.
[0093] 7. Modeling the relationship between proton radiation fluence and scattering parameters
[0094] Using polynomial fitting, a relationship between radiation dose and scattering parameters was established based on experimental data.
[0095] 8. Correlation model between proton radiation fluence and equivalent circuit parameters
[0096] Based on the correlation model between scattering parameters and RLC parameters, a model of the influence of radiation dose on equivalent circuit parameters is further established.
[0097] 9. Model Validation and Optimization
[0098] The equivalent circuit parameters under different proton radiation fluence conditions were used as input to perform circuit simulation in the ADS simulation environment. The simulated scattering parameters were obtained and compared with experimental data to perform error analysis and optimize the accuracy of the model.
[0099] 10. Comprehensive analysis of multiple frequencies and multiple injection volumes
[0100] Comprehensive simulations and analyses were performed under multiple frequency and flux conditions in HFSS and ADS environments. The applicability of the model under different electrical conditions was verified, providing comprehensive data support for the reliability design of three-dimensional microsystem modules.
[0101] The following provides a more detailed description of each step.
[0102] (1) Obtaining sample parameters
[0103] Obtain the geometric parameters and material properties of the three-dimensional microsystem modules, and comprehensively extract the dimensions and material properties of key structures such as TSVs (Through Silicon Vias), RDLs (Rewiring Layers), and BUMPs (Microbumps), including the radius, length, filling material, and insulating layer of the TSVs, the width, height, and material properties of the rewiring layers, as well as the electrical conductivity and dielectric constant of the materials. Figure 2 A cross-sectional view of a through-silicon via (TSV) is shown.
[0104] (2) Constructing a geometric model
[0105] Using HFSS software, based on these material parameters and geometric parameters and other boundary conditions, a finite element model of a microsystem module containing structures such as silicon vias, microbumps, and redistribution was established.
[0106] Define boundary conditions, including the material's electrical conductivity, dielectric constant, and magnetic permeability.
[0107] Configure port excitation with a frequency range of 0.1-26.5GHz.
[0108] (3) Construct a correlation model between material parameters and scattering parameters
[0109] By adjusting the material parameters (copper conductivity, silicon dielectric constant, silicon dioxide dielectric constant) in HFSS, scattering parameters under different material conditions are extracted.
[0110] At a fixed frequency point, a polynomial fitting method is used to establish the relationship between scattering parameters and material parameters.
[0111] Conductivity: S1=aμ 2 +bμ+c
[0112] Dielectric constant: S² = aε 2 +bε+c
[0113] Where a is the first coefficient, b is the second coefficient, c is the constant term, μ is the relative permeability of the material, and ε is the relative permittivity of the material.
[0114] (4) Constructing an equivalent circuit model
[0115] Based on the ADS (ARM Developer Suite) compilation environment and geometric model, the circuit parameters of redistribution layers, through-silicon vias, and microbumps are extracted through equivalent analysis of module parameters. The equivalent methods for key parameters such as parasitic resistance, capacitance, and inductance are clarified, and an RLC equivalent circuit model is established.
[0116] Redeployment layer parameter extraction:
[0117]
[0118] Where R RDL R is the total resistance of the redistribution layer. RDL,dc R is the DC resistance of the redistribution layer. RDL,ac For the AC resistance of the redistribution layer, ρ RDL For the material resistivity of the redistribution layer, w RDL t is the conductor width of the rewiring layer. RDL σ represents the conductor thickness of the rewiring layer. RDL The conductivity of the material used for the redistribution layer.
[0119]
[0120] Where μ0 is the free permeability, μ r,RDL S represents the relative permeability of the redistribution layer material. RDL This represents the distance between adjacent rewiring layers.
[0121] Capacitor C of the insulating layer below the redistribution layerRDLtoSub And the equivalent capacitance C in silicon of the redistribution layer RDLinSub The calculation formula is as follows. Where ε RDLox1 t is the dielectric constant of the insulating layer below the redistribution layer. RDLox ε represents the height of the insulating layer below the redistribution layer. r,eff h is the effective dielectric constant. eff For effective height, l RDL This is the length of the redistribution layer.
[0122]
[0123] Extraction of parasitic parameters for through-silicon vias and microbumps:
[0124]
[0125]
[0126] Among them, R TSV,dc R is the DC resistance of the through-silicon via. TSV,ac R is the AC resistance of the through-silicon via. bump,dc ρ is the DC resistance of the micro-bump. TSV The resistivity of the through-silicon via material is h. TSV r is the height of the through-silicon via. TSV Where δ is the radius of the through-silicon via. skin-depth-TSV h represents the depth of current in a through-silicon via. Bump r is the height of the micro-bump. Bump Let δ be the radius of the micro-bump. skin-depth-Bump This indicates the depth of the current in the microbump.
[0127]
[0128] Among them, L Bump For inductors with micro-scratches, h TSV r is the height of the through-silicon via. TSV p is the radius of the through-silicon via. TSV This represents the spacing between two adjacent through-silicon via pillars.
[0129]
[0130] Among them, C TSV-ax ε represents the total oxide capacitance of the through-silicon via. TSVox Let r be the dielectric constant of the oxide layer material of the through-silicon via. dep t is the outer radius of the maximum depletion layer of the oxide layer. ox C represents the structural thickness of the oxide layer. ox For silicon dioxide dielectric capacitors with oxide layers, C dep This is the depletion region capacitance when the depletion layer thickness is at its maximum in a silicon substrate with an oxide layer.
[0131] (5) Establish a correlation model between circuit characteristics and scattering parameters
[0132] Based on the equivalent circuit extraction method and combined with the correlation model between material parameters and scattering parameters, the relationship between S-parameters and equivalent circuit parameters (R, L, C) is established, and the key coefficients are identified.
[0133] (6) Proton irradiation experiment
[0134] Perform different radiation fluence (E10 P / cm) 2 E11 P / cm 2 E12 P / cm 2 Proton irradiation experiments.
[0135] The electrical characteristics of the experimental chip were tested, and the scattering parameters were measured using a network analyzer (VNA) to ensure the accuracy of the data.
[0136] (7) Constructing a model relating proton radiation fluence to scattering parameters:
[0137] Using a polynomial fitting method, the relationship between radiation dose and scattering parameters was established based on experimental data, and the linear and nonlinear influence coefficients were determined.
[0138] S11=dD 3 +eD 2 +fD+g;
[0139] Where S11 is the reflection coefficient, D is the radiation dose, d is the cubic coefficient characterizing the higher-order nonlinear effect of the radiation dose on the reflection coefficient S11, e is the quadratic coefficient reflecting the nonlinear effect of the radiation dose on the reflection coefficient S11, f is the linear coefficient representing the degree of linear effect of the radiation dose on the reflection coefficient S11, and g represents the initial reflection coefficient value under no-irradiation conditions.
[0140] Figure 3 This is the first schematic diagram showing the relationship between the reflection coefficient S11 and the scattering parameters. Figure 4 This is a second schematic diagram showing the relationship between the reflection coefficient S11 and the scattering parameters.
[0141] The relationship between capacitance C1 and proton radiation fluence is shown in Table 1:
[0142] Radiant Flux C1 0 20.2589 E12 23.9587
[0143] The relationship between different S11 values and resistors and frequency points is shown in Table 2:
[0144] Frequency point ΔS11 R12 / R6(TSV) 0.1 -2.53909 1412.886 5 14.00919 185.073 10 23.0027 95.073 15 20.39989 55.073 20 15.74546 35.073 25 12.04848 1.1
[0145] R12 / R6 are the combined resistor numbers in the fitting process. (8) Construct a correlation model between proton radiation fluence and equivalent circuit parameters.
[0146] Based on the correlation model between scattering parameters and RLC parameters, a relationship model between radiation dose and resistance, inductance, and capacitance in the equivalent circuit is further established.
[0147] (9) Model Validation
[0148] Equivalent circuit parameters under different radiation dose conditions were used as input to perform circuit simulation in the ADS simulation environment to obtain scattering parameters. Error analysis was then performed between the simulation results and experimental data to verify the accuracy of the model. R... 2 This is used to measure the degree of fit between the model and the experimental data. The following is R... 2 Calculation method:
[0149]
[0150] Where SSE represents the squared difference between the model's predicted value and the actual value, the formula is:
[0151]
[0152] SST represents the squared difference between a data point and the data mean, and the formula is:
[0153]
[0154] in, The predicted value of scattering parameter S21, y, is fitted to the correlation model between proton radiative fluence and scattering parameters. i The measured value of scattering parameter S21 obtained from the experiment. The mean value of the scattering parameter S21 obtained from the experiment.
[0155] 10. Comprehensive analysis of multiple frequencies and multiple injection volumes
[0156] Comprehensive simulations and analyses were performed under multiple frequency and flux conditions in HFSS and ADS environments. The applicability of the model under different electrical conditions was verified, providing comprehensive data support for the reliability design of three-dimensional microsystem modules.
[0157] Figure 5 The comparison results of the scattering coefficient S21 of the model and the actual measurement at different frequencies are shown.
[0158] Example 2
[0159] This embodiment provides a system for proton irradiation simulation modeling of microsystem interconnect modules based on through-silicon vias (TSVs), including:
[0160] The finite element model building module is used to obtain the geometric parameters and material properties of through-silicon vias, redistribution layers, and microbumps in a three-dimensional microsystem. Based on the geometric parameters and material properties, a finite element model of the three-dimensional microsystem containing through-silicon vias, redistribution layers, and microbumps is built using finite element analysis software.
[0161] The module for building a correlation model between material property parameters and scattering parameters is used to adjust the material parameters of the finite element model of a three-dimensional microsystem, obtain the scattering parameters under different material property conditions, and build a correlation model between material property parameters and scattering parameters.
[0162] The module for constructing the correlation model between RLC equivalent circuit and scattering parameters is used in the ADS compilation environment to extract the circuit parameters of through silicon vias, redistribution layers and microbumps in the finite element model and construct the RLC equivalent circuit; based on the RLC equivalent circuit, a correlation model between the RLC equivalent circuit and scattering parameters is established.
[0163] A module for constructing a correlation model between proton radiative flux and scattering parameters is used to conduct proton irradiation experiments with different radiative fluxes, test scattering parameters, and obtain experimental data on scattering parameters; based on the experimental data on scattering parameters, a correlation model between proton radiative flux and scattering parameters is constructed; and,
[0164] The RLC equivalent circuit correlation model construction module is used to construct a correlation model between proton radiation fluence and RLC equivalent circuit, and based on the correlation model between proton radiation fluence and RLC equivalent circuit, construct correlation models between proton radiation fluence and resistance, inductance and capacitance in RLC equivalent circuit respectively.
[0165] As can be seen from the above detailed description of the present invention, the present invention can describe multilayer three-dimensional structures under different conductivity and dielectric constants, achieving high-precision prediction of scattering parameters and significantly improving the accuracy of modeling and simulation. By combining HFSS and ADS simulation tools, a correlation model between scattering parameters and conductivity, and between dielectric constant and equivalent circuit parameters, is systematically constructed.
[0166] This invention quantifies the influence of conductivity and dielectric constant on scattering parameters, enabling the description of electrical characteristic variations under different proton irradiation conditions. This method optimizes the reliability design of multilayer three-dimensional structures under radiation environments, providing a scientific basis for module reliability assessment and optimization, and significantly reducing design errors and experimental costs.
[0167] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to the embodiments, those skilled in the art should understand that modifications or equivalent substitutions to the technical solutions of the present invention do not depart from the spirit and scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.
Claims
1. A method for proton irradiation simulation modeling of microsystem interconnect modules based on through-silicon vias (TSVs), comprising: Step 1: Obtain the geometric parameters and material properties of the through-silicon vias, redistribution layers, and microbumps of the 3D microsystem; Step 2: Based on geometric parameters and material properties, establish a finite element model of a three-dimensional microsystem including through-silicon vias, redistribution layers, and microbumps using finite element analysis software; Step 3: By adjusting the material parameters of the finite element model of the three-dimensional microsystem, the scattering parameters under different material property conditions are obtained, and a correlation model between the material property parameters and the scattering parameters is constructed. Step 4: In the ADS compilation environment, extract the circuit parameters of through silicon vias, redistribution layers, and microbumps from the finite element model, and construct the RLC equivalent circuit; based on the RLC equivalent circuit, establish a correlation model between the RLC equivalent circuit and the scattering parameters. Step 5: Conduct proton irradiation experiments with different radiation fluences, test scattering parameters, and obtain experimental data on scattering parameters; based on the experimental data on scattering parameters, construct a correlation model between proton radiation fluence and scattering parameters; Step 6: Construct a correlation model between proton radiation fluence and RLC equivalent circuit, and based on the correlation model between proton radiation fluence and RLC equivalent circuit, construct correlation models between proton radiation fluence and resistance, inductance and capacitance in RLC equivalent circuit respectively.
2. The proton irradiation simulation modeling method for microsystem interconnect modules based on through-silicon vias (TSVs) according to claim 1, characterized in that, In step 1, the geometric parameters of the through-silicon via include: radius, length, and insulating layer parameters; the geometric parameters of the redistribution layer include: width and height; the geometric parameters of the microbumps include: size; and the material properties include: electrical conductivity, magnetic permeability, and dielectric constant.
3. The proton irradiation simulation modeling method for microsystem interconnect modules based on through-silicon vias (TSVs) according to claim 2, characterized in that, In step 2, the finite element analysis software used is HFSS simulation software, which specifically includes: using HFSS simulation software, based on geometric parameters and material properties, preset boundary conditions and port excitation, to establish a finite element model of a three-dimensional microsystem containing through silicon vias, redistribution layers and microbumps. The boundary conditions include the electrical conductivity, dielectric constant and magnetic permeability of the material; the frequency range of the port excitation is set to 0.1-26.5 GHz.
4. The proton irradiation simulation modeling method for microsystem interconnect modules based on through-silicon vias (TSVs) according to claim 3, characterized in that, Step 3 specifically includes: adjusting the material property parameters of through-silicon vias, redistribution layers, and microbumps in HFSS simulation software; extracting scattering parameters under different material property conditions; and constructing a correlation model between material property parameters and scattering parameters at a fixed frequency point using a polynomial fitting method; wherein, The model for conductivity S1 is: S1 = aμ 2 + bμ + c The model for the dielectric constant S2 is: S2=aε 2 +bε+c Where a is the first coefficient, b is the second coefficient, c is the constant term, μ is the relative permeability of the material, and ε is the relative permittivity of the material.
5. The proton irradiation simulation modeling method for microsystem interconnect modules based on through-silicon vias (TSVs) according to claim 4, characterized in that, Step 4, which involves extracting the equivalent circuit parameters of the redistribution layer, includes: Extract the total resistance R of the redistribution layer. RDL : Among them, R RDL,dc R is the DC resistance of the redistribution layer. RDL,ac For the AC resistance of the redistribution layer; where, Where, ρ RDL For the material resistivity of the redistribution layer, l RDL w is the length of the redistribution layer. RDL t is the conductor width of the rewiring layer. RDL σ represents the conductor thickness of the rewiring layer. RDL The conductivity of the material used in the redistribution layer, where, Where μ0 is the free permeability, μ r,RDL S represents the relative permeability of the redistribution layer material. RDL This represents the distance between adjacent redistribution layers. Extract the capacitor C of the insulating layer below the redistribution layer. RDLtoSub : Where ε0 is the vacuum permittivity, ε RDLox1 is the dielectric constant of the insulating layer below the redistribution layer, and lox is the length of the insulating layer; Extracting the redistribution layer in silicon equivalent capacitance C RDLinSub : ε r,eff h is the effective dielectric constant. eff For effective height, among which, Where h is the measurement height of the redistribution layer.
6. The proton irradiation simulation modeling method for microsystem interconnect modules based on through-silicon vias (TSVs) according to claim 4, characterized in that, Step 4, which involves extracting the equivalent circuit parameters of through-silicon vias and microbumps, includes the following steps: Extracting the DC resistance R of a through-silicon via TSV,dc : Extracting the AC resistance R of a through-silicon via TSV,ac : Where, ρ TSV h is the resistivity of the material in a through-silicon via. TSV r is the height of the through-silicon via. TSV Let δ be the radius of the through-silicon via. skindepth,TSV Indicates the depth of current in a through-silicon via; Extracting the DC resistance R of the micro-bump bump,dc : Extracting the AC resistance R of the micro-bumps BUMPac : Where, ρ BUMP h is the resistivity of the material with micro-bumps. Bump r is the height of the micro-bump. Bump Let δ be the radius of the micro-bump. skindepth,BUMP This indicates the depth of the current in the microbump; Extracting the inductance L of the micro-bump Bump : Among them, h TSV r is the height of the through-silicon via. TSV p is the radius of the through-silicon via. TSV The distance between two adjacent silicon via pillars is denoted by f, and f is the signal frequency when the circuit is in use. Among them, C TSV-ax ε represents the total oxide capacitance of the through-silicon via. TSVox Let r be the dielectric constant of the oxide layer material of the through-silicon via. dep t is the outer radius of the maximum depletion layer of the oxide layer. ox C represents the structural thickness of the oxide layer. ox For silicon dioxide dielectric capacitors with oxide layers, C dep This is the depletion region capacitance when the depletion layer thickness is at its maximum in a silicon substrate with an oxide layer.
7. The proton irradiation simulation modeling method for microsystem interconnect modules based on through-silicon vias (TSVs) according to claim 1, characterized in that, In step 5, the different radiation fluences include: E10P / cm 2 E11P / cm 2 and E12P / cm 2 Scattering parameters were tested using a network analyzer; using polynomial fitting, based on experimental data of the scattering parameters, the relationship between radiative fluence and scattering parameters was established, linear and nonlinear influence coefficients were determined, and a correlation model between proton radiative fluence and scattering parameters was constructed. S11=dD 3 +eD 2 +fD+g; Where S11 is the reflection coefficient, D is the radiation dose, d is the cubic coefficient characterizing the higher-order nonlinear effect of the radiation dose on the reflection coefficient S11, e is the quadratic coefficient reflecting the nonlinear effect of the radiation dose on the reflection coefficient S11, f is the linear coefficient representing the degree of linear effect of the radiation dose on the reflection coefficient S11, and g represents the initial reflection coefficient value under no-irradiation conditions.
8. The proton irradiation simulation modeling method for microsystem interconnect modules based on through-silicon vias (TSVs) according to claim 1, characterized in that, Step 6 is followed by a verification step: using the equivalent circuit parameters under different radiation fluence conditions as input, performing circuit simulation in the ADS simulation environment to obtain the simulation results of the scattering parameters; performing error analysis between the simulation results of the scattering parameters and the experimental data of the scattering parameters to verify the accuracy of the correlation model between proton radiation fluence and scattering parameters.
9. The proton irradiation simulation modeling method for microsystem interconnect modules based on through-silicon vias (TSVs) according to claim 8, characterized in that, The error analysis includes the following steps: The degree of matching R between the correlation model of proton radiation fluence and scattering parameters and the experimental data of scattering parameters was obtained. 2 : Where SSE represents the predicted value of scattering parameter S21 fitted by the correlation model between proton radiative flux and scattering parameters. The measured value y of the scattering parameter S21 obtained from the experiment i The squared difference between them, SST represents the measured value of the scattering parameter S21 obtained in the experiment. i The measured mean of the scattering parameter S21 obtained from the experiment The difference of squares between them; where, 10. A proton irradiation simulation modeling system based on through-silicon via (TSV) microsystem interconnect modules, comprising: The finite element model building module is used to obtain the geometric parameters and material properties of through-silicon vias, redistribution layers, and microbumps in a three-dimensional microsystem. Based on geometric parameters and material properties, a finite element model of a three-dimensional microsystem including through silicon vias, redistribution layers, and microbumps was established using finite element analysis software. The module for building a correlation model between material property parameters and scattering parameters is used to adjust the material parameters of the finite element model of a three-dimensional microsystem, obtain the scattering parameters under different material property conditions, and build a correlation model between material property parameters and scattering parameters. The module for constructing the correlation model between RLC equivalent circuit and scattering parameters is used in the ADS compilation environment to extract the circuit parameters of through silicon vias, redistribution layers and microbumps in the finite element model and construct the RLC equivalent circuit; based on the RLC equivalent circuit, a correlation model between the RLC equivalent circuit and scattering parameters is established. The module for constructing a correlation model between proton radiation flux and scattering parameters is used to conduct proton irradiation experiments with different radiation fluxes, test scattering parameters, and obtain experimental data on scattering parameters; based on the experimental data on scattering parameters, a correlation model between proton radiation flux and scattering parameters is constructed. and, The RLC equivalent circuit correlation model construction module is used to construct a correlation model between proton radiation fluence and RLC equivalent circuit, and based on the correlation model between proton radiation fluence and RLC equivalent circuit, construct correlation models between proton radiation fluence and resistance, inductance and capacitance in RLC equivalent circuit respectively.